Substrate processing device

Substrate processing method

SUBSTRATE PROCESSING DEVICE

One or more embodiments relate to a substrate processing apparatus, and more particularly, to a substrate processing apparatus having a batch reactor with improved exhaust structure.

Multiple reactor chambers offer the advantages of high hourly productivity and precise control of a single substrate. On the other hand, however, the multi-reactor chamber has the problem that it is difficult to implement the uniform symmetry of the thickness of the film deposited on the substrate. For example, as the size of semiconductor devices becomes smaller, it is necessary to deposit multiple thin films with concentric film profiles on a substrate for subsequent process compatibility.

One or more embodiments include a substrate processing apparatus capable of improving the deviation of exhaust flow to achieve good thickness uniformity of thin films.

One or more embodiments include a substrate processing apparatus that can further simplify a chamber by forming a reactor exhaust passage in a chamber lid and a chamber wall external structure and can make it lighter and easier to maintain.

Additional aspects will be set forth in part in the description that follows, and in part will be apparent from the description, or may be learned by practice of the proposed embodiments of the present disclosure.

According to one or more embodiments, a substrate processing apparatus includes a reactor; a support portion configured to support at least a portion of the reactor; and a first exhaust passage and a second exhaust passage communicating with the A reaction space of the reactor, wherein each of the first exhaust passage and the second exhaust passage can extend around a portion of the reaction space.

According to an example of the substrate processing apparatus, the first exhaust passage may extend through a first portion of the support portion.

According to another example of the substrate processing apparatus, the substrate processing apparatus may further include an exhaust space surrounding the reaction space, and a first exhaust port between the exhaust space and the first exhaust channel .

According to another example of the substrate processing apparatus, the substrate processing apparatus may further include a first sealing member between the first exhaust port and the support portion.

According to another example of the substrate processing apparatus, the substrate processing apparatus may further include a first channel cover disposed between the first exhaust port and the support portion, and the first exhaust channel may extend to between the first passage cover and the support portion.

According to another example of the substrate processing apparatus, the substrate processing apparatus may further include a second sealing member between the first exhaust port and the first channel cover.

According to another example of the substrate processing apparatus, the second exhaust passage may extend through a second portion of the support portion, the second portion being different from the first portion.

According to another example of the substrate processing apparatus, the support portion may further include a joining point of the first exhaust channel and the second exhaust channel.

According to another example of the substrate processing apparatus, the joint may be arranged at a corner of the support.

According to another example of the substrate processing apparatus, the junction may comprise a T-shaped or T-like channel structure.

According to another example of the substrate processing apparatus, the substrate processing apparatus may include a partition below the support portion; and a transfer passage communicating with the first exhaust passage and the second exhaust passage , wherein the transmission channel may extend through a portion of the separator.

According to another example of the substrate processing apparatus, the substrate processing apparatus may further include a second channel cover disposed between the support portion and the separator.

According to another example of the substrate processing apparatus, the transfer channel may extend between the second channel cover and the separator.

According to another example of the substrate processing apparatus, the diameter of the first exhaust channel may be 1/2 of the diameter of the transport channel.

According to one or more embodiments, a substrate processing apparatus includes a first reactor; a second reactor; and a support configured to support at least a portion of the first reactor and at least a portion of the second reactor A first exhaust channel, which communicates with a first reaction space of this first reactor; a second exhaust channel, which communicates with this first reaction space; a third exhaust channel, communicates with this second reaction a second reaction space of the vessel; and a fourth exhaust passage communicating with the second reaction space, wherein each of the first exhaust passage and the second exhaust passage can extend around the first reaction space and each of the third exhaust passage and the fourth exhaust passage may extend around at least a portion of the second reaction space.

According to an example of the substrate processing apparatus, the first exhaust passage may extend through a first portion of the support portion, the second exhaust passage may extend through a second portion of the support portion, and the third exhaust passage The passage may extend through a third portion of the support, and the fourth exhaust passage may extend through a fourth portion of the support.

According to another example of the substrate processing apparatus, the first exhaust passage and the fourth exhaust passage may extend parallel to each other.

According to another example of the substrate processing apparatus, the second exhaust channel and the third exhaust channel may extend on the same line.

According to another example of the substrate processing apparatus, the first exhaust channel and the second exhaust channel may be joined at a first corner of the support, and the third exhaust channel and the fourth exhaust channel The channel can engage at a second corner of the support.

According to one or more embodiments, a substrate processing apparatus includes a plurality of reactors; a plurality of exhaust ports communicating with the plurality of reactors and arranged symmetrically with respect to the reactors, respectively; and a plurality of exhaust channels, It communicates with the plurality of exhaust ports, wherein each exhaust passage includes a plurality of exhaust passages, and the plurality of exhaust passages include a first passage extending along a first direction and a passage extending along a second direction the second channel, the second direction is different from the first direction, wherein the plurality of exhaust channels can extend through the plurality of components supporting at least a portion of the plurality of reactors.

Reference will now be made in detail to various embodiments, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to like elements throughout. In this regard, the present embodiments may have different forms and should not be construed as being limited to the descriptions set forth in this specification. Accordingly, the embodiments are merely described below to explain aspects of the present specification by referring to the figures. As used herein, the term "and/or" includes any and all combinations of one or more of the associated list items. When a statement such as "at least one of" precedes a list of elements, it modifies the entire list of elements rather than individual elements of the list.

Hereinafter, various embodiments of the present disclosure will be described in detail with reference to the accompanying drawings.

In this regard, the present embodiments may have different forms and should not be construed as limited to the descriptions set forth in this specification. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art.

The terminology used in this specification is for the purpose of describing particular embodiments and is not intended to limit the present disclosure. As used herein, the singular forms "a/an" and "the (the)" are intended to include the plural forms as well, unless the context clearly dictates otherwise. It will be further understood that the terms "includes/including" and/or "comprises/comprising" as used herein describe recited features, integers, steps, processes, components, components and/or the like The presence of a group does not preclude the presence or addition of a group of one or more other features, integers, steps, processes, components, components, and/or the like. As used in this specification, the term "and/or" includes any and all combinations of one or more of the associated listed items.

It will be understood that, although this specification may use the ordinal words first, second, etc. to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections should not be limited by these ordinal words . These terms do not denote any order, quantity, or importance, but are merely used to distinguish one element, region, layer and/or section from another element, region, layer and/or section. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of the embodiments.

The present specification will hereinafter describe various embodiments of the present disclosure with reference to the accompanying drawings, in which various embodiments of the present disclosure are schematically shown. In the drawings, variations from the shapes depicted are contemplated due to, for example, manufacturing techniques and/or tolerances. Therefore, the embodiments of the present disclosure should not be construed as being limited to the particular region shapes depicted herein, but may include, for example, shape deviations caused by manufacturing processes.

FIG. 1 is a schematic diagram of a substrate processing apparatus according to various embodiments of the disclosed concepts.

Please refer to FIG. 1, the substrate processing apparatus may include a reactor R, a separator 100, a support portion TLD, a first exhaust port 13, a second exhaust port 14, and a first exhaust channel 15. A second exhaust channel 16, a transfer channel 18, an outer channel EC and an exhaust pump EP.

The reactor R may be a space where processing is performed on an object to be processed, such as a substrate. Although Figure 1 shows only one reactor, multiple reactors may be implemented. The reactor may provide a space for heating, deposition, etching, grinding, ion implantation, and/or other processing of the object to be processed. The reactor can be an open reactor in which the reaction space is kept open; or a closed reactor in which the reaction space is kept closed.

For example, the reactor R may be configured to perform a moving function, a vacuum sealing function, a heating function, a venting function, and/or other functions on the article to be treated, so that the article is treated in this reactor. For example, the reactor may include a reaction space 51 for processing objects to be processed, such as substrates, and an exhaust space 55 for exhausting gas in the reaction space 51 .

In an alternative embodiment, the exhaust space 55 may extend around the reaction space 51 . In another alternative embodiment, the reactor may include at least one cover structure, and the exhaust space 55 and/or the reaction space 51 may be formed through the cover structure. In another alternative embodiment, the reactor may include a first enclosure and a second enclosure. In this case, the exhaust space 55 may be formed in the first enclosure, and a processing unit for reaction (eg, a gas supply unit) may be formed in the second enclosure (see FIG. 4 ) ).

The separator 100 is a chamber for accommodating the reactor R, and can also be referred to as a chamber body. In one embodiment, the reactor R containing the reaction space 51 is referred to as an inner chamber, and the overall structure of the substrate processing apparatus accommodating a plurality of reactors R is referred to as an outer chamber. It should be noted that, in this specification, the statement that a reactor is housed in the partition is a concept including any configuration in which the reactor is surrounded by the partition, the reactor is located in the partition by the partition Structurally defined, or the reactor is supported by this partition.

The support TLD may be configured to support at least a portion of the reactor R. For example, the reactor R may include an exhaust unit configured to provide an exhaust space 55 surrounding the reaction space 51, and the support portion TLD may be configured to support the exhaust unit. The support portion TLD can be supported by the separator 100 . As mentioned above, the support portion TLD can be used as a top cover body, and the top cover body is supported by the separator 100 to cover the outer chamber and support the reactor R at the same time.

The first exhaust port 13 may be configured to communicate with the exhaust space 55 . In one embodiment, the first exhaust port 13 may be configured to communicate with a first portion of the exhaust space 55 , and the first portion is formed to surround the reaction space 51 . The first exhaust port 13 can be connected to one end of the first exhaust passage 15 and the exhaust space 55 . In an alternative embodiment, the gas in the exhaust space 55 can be discharged downward to the first exhaust channel 15 through the first exhaust port 13 . The downward discharge can be achieved through a channel structure inside the first exhaust port 13 . For example, a part of the channel structure of the first exhaust port 13 may communicate with the exhaust space 55 along one side, and another part of the channel structure of the first exhaust port 13 may be along a downward direction The direction communicates with the first exhaust passage 15 .

The second exhaust port 14 may be configured to communicate with the exhaust space 55 . In one embodiment, the second exhaust port 14 may be configured to communicate with a second portion of the exhaust space 55 , and the second portion is formed to surround the reaction space 51 . The second exhaust port 14 can be connected to one end of the second exhaust path 16 and the exhaust space 55 . In an alternative embodiment, the gas in the exhaust space 55 can be discharged downward to the second exhaust passage 16 through the second exhaust port 14 . The downward discharge can be achieved through a channel structure inside the second exhaust port 14 . For example, a part of the channel structure of the second exhaust port 14 may communicate with the exhaust space 55 along one side, and another part of the channel structure of the second exhaust port 14 may be along a downward direction The direction communicates with this second exhaust path 16 .

In an alternative embodiment, the first exhaust port 13 and the second exhaust port 14 may be arranged symmetrically. For example, the first exhaust port 13 and the second exhaust port 14 may be configured to be arranged facing each other at a 180-degree interval. In another embodiment, in addition to the first exhaust port 13 and the second exhaust port 14, additional exhaust ports may be provided, and these exhaust ports may be arranged at the same angular interval place.

In the substrate processing apparatus with such an exhaust structure, the airflow and exhaust flow in a reactor can be uniformly controlled by arranging a plurality of exhaust ports surrounding the reaction space 51 . In an alternative embodiment, the vents may be arranged asymmetrically, allowing for more efficient and uniform exhaust flow in the reactor. The optimal arrangement of these vents can be determined empirically or by means of simulation evaluation.

The first exhaust passage 15 can connect the first exhaust port 13 and the transmission passage 18 . One end of the first exhaust passage 15 may be connected to the first exhaust port 13 , and the other end of the first exhaust passage 15 may be connected to the first transmission passage 18 . Therefore, a part of the gas in the reaction space 51 can be exhausted by flowing to the transfer channel 18 through the first exhaust port 13 , the first exhaust channel 15 and a junction 17 .

In some embodiments, the first exhaust passage 15 may extend around a portion of the exhaust space 55 . Because the first exhaust port 13 has a channel structure for downward exhaust, the first exhaust channel 15 can be below the exhaust space 55 of the reactor R. For example, the first exhaust passage 15 may extend below the exhaust space 55 along an edge of the support portion TLD. The distance from the center of symmetry of the exhaust space 55 surrounding the reaction space 51 to the first exhaust passage 15 may be greater than the distance from the center of symmetry of the exhaust space 55 to an edge of the exhaust space 55 . Therefore, the first exhaust passage 15 surrounding a part of this exhaust space 55 can be formed.

The first exhaust passage 15 may extend through a first portion of the support portion TLD. Since the gas flowing through the first exhaust passage 15 is transmitted from the first exhaust port 13 to the support portion TLD, a first sealing member may be arranged between the first exhaust port 13 and the support portion TLD, to prevent this gas from leaking. The first sealing member may be arranged in a groove provided in the first exhaust port 13 and/or the support portion TLD.

In an alternative embodiment, a first channel cover may be arranged between the first exhaust port 13 and the support portion TLD. Although FIG. 1 shows the first channel cover and the support TLD in an integral configuration, the first channel cover may be implemented in a configuration that separates the support TLD (see a first channel cover shown in FIG. 12 ). a cover 130). In this case, the first exhaust passage 15 may extend between the first passage cover and the support portion TLD. That is, the first channel cover may extend along the extending direction of the first exhaust channel 15 .

By implementing the first channel cover and the support TLD in a separate configuration, smooth maintenance of the first exhaust channel 15 can be achieved. For example, the first channel cover implemented in a separate configuration from the support TLD can be secured to the support TLD by a separation coupling member, and by removing the coupling member, the first channel can be separated cover, and thus the first exhaust passage 15 can be exposed. In a further embodiment, in order to prevent gas leakage, a second sealing member may be arranged between the first exhaust port 13 and the first passage cover.

The second exhaust passage 16 can connect the second exhaust port 14 and the transmission passage 18 . One end of the second exhaust passage 16 may be connected to the second exhaust port 14 , and the other end of the second exhaust passage 16 may be connected to the transmission passage 18 . Therefore, another part of the gas in the reaction space 51 can be exhausted by flowing to the transfer channel 18 through the second exhaust port 14 , the second exhaust channel 16 and the junction 17 . The second exhaust passage 16 may extend through a second portion of the support TLD (ie, a second portion different from the first portion of the support TLD).

In some embodiments, the second exhaust passage 16 may extend around a portion of the exhaust space 55 . Because the second exhaust port 14 has a channel structure for downward exhaust, the second exhaust channel 16 can be below the exhaust space 55 of the reactor R. For example, the second exhaust passage 16 may extend below the exhaust space 55 along the edge of the support portion TLD. The distance from the symmetrical center of the exhaust space 55 surrounding the reaction space 51 to the second exhaust passage 16 may be greater than the distance from the center of the exhaust space 55 to the edge of the exhaust space 55 . Therefore, the second exhaust passage 16 surrounding a part of this exhaust space 55 can be formed.

At this junction 17, the first exhaust passage 15 and the second exhaust passage 16 can be connected to each other. That is, the gas in the first exhaust passage 15 and the gas in the second exhaust passage 16 can be exhausted through the junction 17 . The junction 17 may be implemented within the support TLD. For example, the joint 17 may be arranged at a corner of the support TLD. More specifically, the first exhaust passage 15 may extend along a first surface of the support portion TLD, the second exhaust passage 16 may extend along a second surface of the support portion TLD, and the joint Point 17 may be at a corner where the first surface and the second surface meet.

The junction 17 can be connected to the transmission channel 18 so that the gas in the first exhaust channel 15 and the gas in the second exhaust channel 16 can be transmitted to the exhaust through the junction 17 and the transmission channel 18 Pump EP. In an alternative embodiment, the aforementioned exhaust gas may be exhausted downward, and the downward exhaust may pass through the interior of components supporting at least a portion of the reactor R (eg, the support TLD and/or the separator 100 ) is realized by the one-channel structure. For example, in order to implement the channel structure, the first exhaust channel 15 and the second exhaust channel 16 may extend through the support TLD supporting at least a part of the reactor R.

A channel structure surrounding the junction 17 may be T-shaped or T-like. A first portion of the channel structure surrounding the junction 17 may communicate with the first exhaust channel 15 along a first lateral direction; a second portion of the channel structure surrounding the junction 17 may communicate along a second The second exhaust channel 16 communicates laterally; and a third portion of the channel structure surrounding the junction 17 can communicate with the transmission channel 18 in a downward direction.

In some embodiments, a cross-sectional area of the transmission channel 18 may be larger than a cross-sectional area of the first exhaust channel 15 . For example, the cross-sectional area of the transmission channel 18 may be twice the cross-sectional area of the first exhaust channel 15 , and the cross-sectional area of the transmission channel 18 may be all of the second exhaust channel 16 . twice the cross-sectional area. Therefore, the gas flowing through the first exhaust channel 15 and the second exhaust channel 16 can be transferred to the transfer channel 18 without flow collisions or flow bottlenecks or changes in flow rate. In some embodiments, both the cross sections of the first exhaust channel 15 and the transmission channel 18 may be circular, in which case, the diameter of the first exhaust channel 15 may be the diameter of the transmission channel 18 . 1/2.

As previously described, the first exhaust passage 15, the second exhaust passage 16 and their junctions 17 may be arranged to be inserted into this support portion TLD. This arrangement of the first exhaust passage 15 , the second exhaust passage 16 and the junction 17 has a technical advantage in that a single exhaust structure can perform substrate processing of a plurality of reactors simultaneously Simplified in the multi-reactor structure.

The transmission channel 18 may be provided in the separator 100 . The transmission channel 18 may be below the support TLD. In some embodiments, the transfer channel 18 may be formed to extend along a portion of the separator 100 (eg, inside a side wall). In one embodiment, the substrate processing apparatus includes a first surface and a second surface, the second surface is adjacent to the first surface, and the transfer channel 18 can be along the first surface and the second surface An edge between the surfaces extends. In other embodiments, the transmission channel 18 may be formed to extend along the interior of the lower wall of the separator 100 .

In an alternative embodiment, a second channel cover may be arranged between the support portion TLD and the separator 100 . Although FIG. 1 shows the second channel cover and the divider 100 in an integrated configuration, the second channel cover may be implemented in a separate configuration from the divider 100 .

Although the transport channel 18 in FIG. 1 extends vertically in the separator 100 , in some embodiments, the transport channel 18 may extend horizontally along a surface of the separator 100 . In this case, the transmission channel 18 will be arranged between the second channel cover and the separator 100 (see a second cover 140 shown in FIG. 12). In addition, the second channel cover may extend along an extension direction (ie, a horizontal extension direction) of the transmission channel 18 .

FIG. 2 is a diagram of a substrate processing apparatus according to other embodiments of the disclosed concepts. FIG. 3 is a plan view of the substrate processing apparatus. The substrate processing apparatus according to these embodiments may be a modification of the substrate processing apparatus according to the previous embodiments. Hereinafter, repeated descriptions of the embodiments will not be given here.

The substrate processing apparatus may be a multi-reactor apparatus containing a plurality of reactors. That is, a first reactor R1, a second reactor R2, a third reactor R3, and a fourth reactor R4 may be included in a substrate processing apparatus, so that a plurality of substrates can be processed simultaneously. Although Figures 2 and 3 show four reactors, the present disclosure is not so limited, and the substrate processing apparatus may include a plurality of reactors (ie, two or more reactors).

Referring to FIGS. 2 and 3, the substrate processing apparatus may include the first reactor R1, the first exhaust port 13, the second exhaust port 14, and the first exhaust channel 15. The second exhaust passage 16 and the first transmission passage 18. These components have been described in detail with reference to FIG. 1, and thus a repeated description thereof will not be given here. In addition, the substrate processing apparatus may further include the second reactor R2, a third exhaust port 23, a fourth exhaust port (not shown), a third exhaust channel 25, and a fourth exhaust channel 26 and a second transmission channel 28. The substrate processing apparatus may further include a structure of one of corresponding exhaust ports, exhaust channels and transfer ports for the third reactor R3 and the fourth reactor R4.

The third exhaust port 23 may be configured to communicate with an exhaust space 55'. In one embodiment, the third exhaust port 23 may be configured to communicate with a third portion of the exhaust space 55 , and the third portion is formed to surround a reaction space 51 . The third exhaust port 23 can connect one end of the third exhaust path 25 and the exhaust space 55 . In an alternative embodiment, the gas in the exhaust space 55 can be discharged downward to the third exhaust passage 25 through the third exhaust port 23 . The downward discharge can be achieved through a channel structure inside the third exhaust port 23 . For example, a part of the channel structure of the third exhaust port 23 may communicate with the exhaust space 55 along one side, and another part of the channel structure of the third exhaust port 23 may be connected along a direction The third exhaust passage 25 communicates downward.

The fourth exhaust port (not shown) may be configured to communicate with the exhaust space 55 in a direction different from the direction of the third exhaust port 23 . In one embodiment, the fourth exhaust port may be configured to communicate with a fourth portion of the exhaust space 55 , and the fourth portion is formed to surround the reaction space 51 . The fourth exhaust port can connect one end of the fourth exhaust passage 26 and the exhaust space 55 . In an alternative embodiment, the gas in the exhaust space 55 can be discharged downward to the fourth exhaust passage 26 through the fourth exhaust port. The downward discharge can be achieved through a channel structure inside the fourth exhaust port. For example, a part of the channel structure of the fourth exhaust port may communicate with the exhaust space 55' in a lateral direction, and another part of the channel structure of the fourth exhaust port may be in a downward direction This fourth exhaust passage 26 is communicated.

In an alternative embodiment, the third exhaust port 23 and the fourth exhaust port (not shown) may be arranged symmetrically. For example, the third exhaust port 23 and the fourth exhaust port may be arranged so as to face each other with a 180-degree interval. In another embodiment, in addition to the third exhaust port 23 and the fourth exhaust port, an additional exhaust port may be provided, and these exhaust ports may be arranged at the same angular interval. In another embodiment, the third exhaust port 23 and the fourth exhaust port can be arranged asymmetrically and have different angular intervals.

The third exhaust passage 25 can connect the third exhaust port 23 and the second transmission passage 28 . One end of the third exhaust passage 25 may be connected to the third exhaust port 23 , and the other end of the third exhaust passage 25 may be connected to the second transmission passage 28 . Therefore, a part of the gas in the reaction space 51 can be exhausted by flowing to the second transmission channel 28 through the third exhaust port 23 , the third exhaust channel 25 and a second junction 27 . The third exhaust passage 25 may extend through a third portion of the support portion TLD.

In some embodiments, the third exhaust passage 25 may extend around a portion of the exhaust space 55'. Because the third exhaust port 23 has a channel structure for downward exhaust, the third exhaust channel 25 can be below the exhaust space 55 of the reactor R. For example, the third exhaust passage 25 may extend below the exhaust space 55' along the edge of the support portion TLD. The distance from the symmetry center of the exhaust space 55 surrounding the reaction space 51' to the third exhaust passage 25 may be greater than the distance from the symmetry center of the exhaust space 55' to an edge of the exhaust space 55'. Therefore, the third exhaust passage 25 surrounding a part of this exhaust space 55' can be formed.

The fourth exhaust passage 26 may connect the fourth exhaust port (not shown) and the second transmission passage 28 . One end of the fourth exhaust passage 26 may be connected to the fourth exhaust port, and the other end of the fourth exhaust passage 26 may be connected to the second transmission passage 28 . Therefore, another part of the gas in the reaction space 51 can be exhausted by flowing to the second transfer channel 28 through the fourth exhaust port, the fourth exhaust channel 26 and the second junction 27 . The fourth exhaust passage 26 may extend through a fourth portion of the support portion TLD (ie, a fourth portion that is different from the third portion of the support portion TLD).

In some embodiments, the fourth exhaust passage 26 may extend around a portion of the exhaust space 55'. Because the fourth exhaust port has a channel structure for downward exhaust, the fourth exhaust channel 26 can be below the exhaust space 55 of the reactor R. For example, the fourth exhaust passage 26 may extend below the exhaust space 55' along an edge of the support portion TLD. The distance from the symmetrical center of the exhaust space 55' surrounding the reaction space 51' to the fourth exhaust passage 26 may be greater than the distance from the symmetrical center of the exhaust space 55' to an edge of the exhaust space 55'. Therefore, the fourth exhaust passage 26 can be formed surrounding a part of this exhaust space 55'.

At this second junction 27, the third exhaust passage 25 and the fourth exhaust passage 26 can be connected to each other. That is, the gas in the third exhaust passage 25 and the gas in the fourth exhaust passage 26 can be exhausted through the second junction 27 . The second joint 27 can be realized inside the support TLD. For example, the second joint 27 may be arranged at a second corner of the support portion TLD. More specifically, the third exhaust passage 25 may extend along a third surface of the support portion TLD, the fourth exhaust passage 26 may extend along a fourth surface of the support portion TLD, and the fourth exhaust passage 26 may extend along a fourth surface of the support portion TLD. The two junctions 27 may be at a second corner where the third surface and the fourth surface meet. Therefore, the first exhaust passage 15 and the second exhaust passage 16 can be joined at the first joint point 17, which is a first corner of the support portion TLD; and the third exhaust passage 25 and this The fourth exhaust passage 26 can be joined at this second joining point 27, which is the second corner of this support portion TLD.

In an alternative embodiment, the first exhaust passage 15 and the fourth exhaust passage 26 may extend parallel to each other. In other alternative embodiments, the second exhaust passage 16 and the third exhaust passage 25 may extend on the same line.

The second junction 27 can be connected to the second transmission channel 28 so that the gas in the third exhaust channel 25 and the gas in the fourth exhaust channel 26 can pass through the second junction 27 and the second The transfer channel 28 transfers to this exhaust pump EP.

A channel structure surrounding the second junction 27 may be T-shaped or T-like. A first portion of the channel structure surrounding the second junction 27 can communicate with the third exhaust channel 25 along the first lateral direction, and a second portion of the channel structure surrounding the second junction 27 can be along the second The fourth exhaust channel 26 is communicated laterally, and a third portion of the channel structure surrounding the second junction 27 can communicate with the second transmission channel 28 in a downward direction.

The second transmission channel 28 may be provided in the separator 100 . The second transmission channel 28 may be below the support portion TLD. In some embodiments, the second transfer channel 28 may be formed to extend along a portion of the separator 100 (eg, inside a side wall).

The substrate processing apparatus may be a multi-substrate processing apparatus implementing a gas supply and exhaust structure for processing a plurality of substrates simultaneously. For example, the multi-substrate processing apparatus may be a horizontal batch type apparatus capable of processing a plurality of substrates simultaneously. That is, a plurality of substrates arranged in the lateral direction can be processed simultaneously. In this case, the first reactor R1 and the second reactor R2 can be used as an inner chamber for processing a plurality of substrates simultaneously.

The substrate processing apparatus may further include the first transfer channel 18 and the second transfer channel 28 . The first transmission channel 18 can connect the first connection point 17 with a connection port CP, so as to transmit the gas of the first connection point 17 to the connection port CP. The second transmission channel 28 can connect the second joint point 27 and the connection port CP to transmit the gas of the second joint point 27 to the connection port CP. The connection port CP can be connected to the exhaust pump EP through the outer channel EC, and the aforementioned gas can be discharged to the outside through the exhaust pump EP. In an alternative embodiment, the connection port CP may be arranged inside or outside the separator 100 . In another alternative embodiment, further the channel EC may be arranged to insert this separator 100 .

In an alternative embodiment, the connection ports CP and CP' may be arranged symmetrically with respect to the substrate processing apparatus. For example, as shown in Figures 2 and 3, the first connection port CP connected to the first transmission channel 18 and the second transmission channel 28 is connected to a third transmission channel and a fourth transmission channel The second connection port CP' of the transfer channel may be symmetrically arranged with respect to a central portion of the substrate processing apparatus.

In some embodiments, the outer channels EC and EC' may be arranged symmetrically with respect to the substrate processing apparatus. For example, as shown in Figures 2 and 3, the first outer channel EC and the second outer channel EC' respectively connected to the first connection port CP and the second connection port CP' may be relative to the The central portion of the substrate processing apparatus is arranged symmetrically. Furthermore, in an alternative embodiment, this exhaust pump EP may be arranged at the central portion of the substrate processing apparatus.

In another embodiment, furthermore the channel EC and this exhaust pump EP may be arranged asymmetrically with respect to the substrate processing apparatus. For example, as shown in FIGS. 7 to 9 , the first outer channel EC connected to the first connection port CP may extend toward a first corner C1 of the outer chamber under the separator 100 . Furthermore, the second outer channel EC' connected to the second connection port CP' may extend below the separator 100 towards a second corner C2 of the outer chamber. This exhaust pump EP may be arranged on a surface of the substrate processing apparatus, eg, corresponding to the center between the first corner C1 and the second corner C2. Also the first outer channel EC may extend from a portion extending to the first corner C1 to the exhaust pump EP. Also, the second outer passage EC' may extend from a portion extending to the second corner C2 to the exhaust pump EP.

In another alternative embodiment, the first transfer channel 18 and the second transfer channel 28 may be arranged to be inserted into the divider 100 of the outer chamber. For example, this first transmission channel 18 can be formed in the partition 100 of the further chamber, and this first junction 17 can be connected to a This first transmission channel 18 . Likewise, this second transmission channel 28 can be formed in the partition 100 of the outer chamber, and this second junction 27 can be connected to a second corner C2 (shown in FIG. 7 ) arranged in this partition 100 of this second transmission channel 28 . The first transmission channel 18 and the second transmission channel 28 can be connected to the connection port CP.

FIGS. 4 to 6 are cross-sectional views of the substrate processing apparatus shown in FIGS. 2 and 3 . FIG. 4 is a cross-sectional view of the substrate processing apparatus taken along the line IV-IV' shown in FIG. 3; FIG. 5 is a cross-sectional view of the substrate processing apparatus taken along the line VV' shown in FIG. 3; FIG. 6 is a cross-sectional view of the substrate processing apparatus taken along the line VI-VI' shown in FIG. 3 .

Referring to FIGS. 4 to 6 , a reactor of the substrate processing apparatus may include a substrate support unit 150 , a first cover 110 and a second cover 120 .

The first cover 110 is located on the substrate supporting unit 150 and covers the upper portion of the reaction space 51, and may include a processing unit. The processing unit may be fastened (eg, fixed) to the first enclosure 110 and may employ components that perform appropriate functions according to the function of the reactor. For example, when a reactor performs a deposition function, the processing unit of the first enclosure 110 may include a reactant supply source (eg, a showerhead assembly). In another embodiment, when the reactor performs the polishing function, the processing unit of the first housing 110 may include a polishing pad.

The second cover 120 may be between the first cover 110 and the separator 100 . The second enclosure 120 can provide a space for accommodating the processing unit connected to the first enclosure 110 . Alternatively, the second cover 120 can provide a part of the space for the object to be processed. For example, when the separator 100 performs the deposition function, the reaction space 51 for deposition can be formed inside a side wall of the second cover 120 , and the exhaust space 55 can be formed in the second cover 120 internal.

The support portion TLD can contact the second cover body 120 to support the first cover body 110 and the second cover body 120 . The support portion TLD can be supported by the separator 100 . The support portion TLD may be disposed between the separator 100 and a cover (especially, the second cover 120 ). A gap E may be formed between the second housing 120 and a flow control ring FCR. The gap E can be used as a passage between the first reaction space 51 and the first exhaust space 55 . Therefore, the first reaction space 51 and the first exhaust space 55 can communicate with each other through the passage.

Please refer to FIG. 4 , a part of the second cover 120 can communicate with the first exhaust port 13 . Therefore, a part of the processing gas in the exhaust space 55 can be exhausted through the first exhaust port 13 . In an exemplary embodiment, the first exhaust port 13 may have an L-shaped or similar L-shaped channel formed therein, so that the gas in the exhaust space 55 flows along one side and is exhausted downward. Another part of the second cover 120 may communicate with a second exhaust port along a direction different from the first exhaust port 13 . Therefore, another part of the processing gas in the exhaust space 55 can be exhausted through the second exhaust port.

The gas discharged downward through the first exhaust port 13 can be associated with the first exhaust passage 15 . As mentioned above, the first exhaust passage 15 may extend around at least a portion of the first exhaust space 55 . The first exhaust passage 15 can be connected to the first junction 17 . Likewise, the gas exhausted downward through the second exhaust port can be exhausted in association with a second exhaust channel. The second exhaust passage may extend around another portion of the first exhaust space 55 , and the second exhaust passage may be connected to the first junction 17 .

The first junction 17 may have a T-shaped or T-shaped (eg, Y-shaped) channel formed therein. Therefore, the gas of the first exhaust passage 15 can be introduced in a first direction (eg, a first lateral direction) toward the first joint 17 , and the gas of the second exhaust passage 16 can be directed toward the first junction 17 . A joint 17 is introduced along a second direction (eg, a second lateral direction). Also, the gas introduced in the first and second directions may be exhausted in a third direction (eg, a downward direction).

In an alternative embodiment, the flow control ring FCR may be arranged between the support portion TLD and the substrate support unit 150 . The flow control ring FCR is arranged on the support portion TLD and can be arranged to be slidable on the support portion TLD. The flow control ring FCR can space the substrate support unit 150 to form a gap G, and can control the pressure balance between the reaction space 51 and the inner space of the other chamber by adjusting the gap G.

FIGS. 7-9 are diagrams of substrate processing apparatuses according to various embodiments of the present disclosure. In more detail, Fig. 7 shows an outer casing, an exhaust port, an exhaust path, and a transfer port (ie, transfer paths 18 and 28, connection port CP, an external port connected to an external pump path EC, etc.), part of the substrate processing apparatus. FIG. 8 is the view shown in FIG. 7 viewed from a first direction, and FIG. 9 is the view shown in FIG. 7 viewed from a second direction. The substrate processing apparatus according to these embodiments may be a modification of the substrate processing apparatus according to the previous embodiments. Hereinafter, repeated descriptions of the embodiments will not be given here.

Referring now to FIGS. 7 to 9 , the transmission paths 18 ( 18 a and 18 b ) and 28 ( 28 a and 28 b ) are formed in the separator 100 . The transmission paths 18 and 28 are connected to the external path EC through the connection port CP, and the external path EC is connected to a main exhaust path 211 . Therefore, the gas in the reaction space is exhausted to this via the transfer ports (the first junction 17 and the second junction 27 ), the transfer paths 18 and 28 , the external path EC and the main exhaust path 211 . Exhaust pump EP.

As shown in Fig. 8, the two reactors R1a and R1b along a first direction share the internal transfer path 18 (18a and 18b), while the rest along a direction opposite to this first direction (not shown) The two reactors share another internal transfer path 28 (28a and 28b). The two inner transmission paths 18 and 28 are connected to an outer path 9 through the opposite connection port CP. Figure 8 shows that the four reactors share the external path 9, the main exhaust path 211 and the exhaust pump EP. An isolation valve 210 may be added to this main exhaust path 211 . Therefore, during maintenance, the exhaust pump EP can be protected from the outside atmosphere by the isolation valve 210 . Additionally, a pressure control valve (eg, a throttle valve) may be added to this main exhaust path 211 . This outer path EC may be fixed so as not to move the lower surface of the separator 100 in close contact with this outer chamber. In an alternative embodiment, the two inner transfer paths 18 and 28 may be connected to each other within a bottom wall of the divider 100 of the outer chamber and, without the outer path EC, directly connected to the main exhaust Path 211.

Typically, in the case of a substrate processing apparatus that applies side pumping, the exhaust flow deviation occurs due to the asymmetric exhaust characteristics of the side pump. In more detail, in each reactor, the flow of the reaction gas is concentrated to an exhaust port arranged on the side. Due to the concentration of the air flow, the thin film deposited on the substrate near the exhaust port is thicker than the part away from the exhaust port in the opposite direction. Therefore, the profile of the thin film deposited on the substrate loses symmetry and reduces its compatibility with subsequent processes.

FIGS. 10-13 are diagrams of substrate processing apparatuses for solving the aforementioned problems according to various embodiments of the disclosed concept. The substrate processing apparatus according to these embodiments may be a modification of the substrate processing apparatus according to the preceding embodiments. Hereinafter, repeated descriptions of the embodiments will not be given here.

Figure 10 shows the upper support 20 of a chamber 10 containing a plurality of reactors. The first reactor R1 , the second reactor R2 , the third reactor R3 and the fourth reactor R4 may be arranged on the support part 20 at equal intervals. Each reactor may include a gas supply (not shown); a heating block (not shown) disposed relative to the gas supply and having a process substrate mounted thereon; and an exhaust conduit 30 . In this case, the gas supply part, the heating block and the exhaust duct 30 may form a reaction space.

In FIG. 10, the gas supply and heating block are omitted for the understanding of the present disclosure. In each reactor shown in FIG. 10, at least two exhaust ports 40 and 40' are arranged on the sides of this exhaust pipe 30, and are arranged so as to face each other based on the center of symmetry of this exhaust pipe 30 , but not limited to this. A first joint 50 is arranged on the support portion 20, is formed inside the support portion 20, and is arranged not to be directly connected to the exhaust ports 40 and 40'.

FIG. 11 is an internal perspective view of the support portion 20 shown in FIG. 10 . Referring to FIG. 11, inside the support portion 20, a first exhaust channel 70 and a second exhaust channel 80 are formed around each reactor. The first exhaust passage 70 , the second exhaust passage 80 and the exhaust conduit 30 are connected to a reaction space through a first port path 60 .

Fig. 12 is a perspective view of one side as viewed from the direction A shown in Fig. 11 . Figure 12 is for the fourth reactor R4, but the same applies to the first to third reactors R1, R2 and R3.

FIG. 12 shows a chamber exhaust system including the support 20 and a chamber wall 160 . As shown in FIGS. 11 and 12, it can be seen that an exhaust passage is formed in the support portion 20 and the chamber wall 160. FIG. In more detail, in FIG. 12, the second exhaust passage 80 is formed on the support portion 20, and at the first junction 50, the second exhaust passage 80 is connected to the first exhaust Channel 70. The second exhaust passage 80 communicates with an exhaust space 350 of the exhaust conduit 30 through the first port path 60 of an exhaust port 40 . A transmission channel 90 is formed inside the chamber wall 160 , and the transmission channel 90 communicates with the first exhaust channel 70 and the second exhaust channel 80 through the first joint 50 .

The second exhaust passage 80 is formed on an upper surface of the support portion 20 , and the upper surface is isolated from the outside by the first cover 130 . The first cover body 130 may be coupled to the support portion 20 by welding or the like; or, may be integrally formed together with the same top cover body. A sealing unit such as an O-ring may be inserted between the first housing 130 and the first port path 60 to prevent the entry of outside air or the outflow of gas in the exhaust path.

The transmission channel 90 is formed on an upper surface of the chamber wall 160 , and the upper surface is isolated from the outside by the second cover 140 . The second cover 140 may be coupled to the chamber wall 160 by welding or the like; or, may be integrally formed with the chamber wall 160 . Alternatively, a sealing unit such as an O-ring may be inserted between the support portion 20 and the chamber wall 160 without the second cover 140 . A sealing unit such as an O-ring is inserted into a portion B' between the second cover 140 and the first joint 50 to prevent the entry of external air or the outflow of air in the exhaust path. Therefore, the exhaust gas in the reaction space passes through the exhaust space 350, the first port paths 60 and 60', the first exhaust passage 70 and the second exhaust passage 80, the first junction 50, all the The transfer passage 90, a first exhaust path 310 and a second exhaust path 320 discharge to a main exhaust passage (not shown) and an exhaust pump (not shown).

Figure 12 schematically illustrates the fourth reactor R4, but the third reactor R3 (not shown) adjacent to the same side can also be discharged by the same treatment. A connecting passage 300 communicates with the first exhaust path 310 at the junction C shown in FIG. 12, and is discharged through the second exhaust path 320, the main exhaust passage and the exhaust pump. That is, the third reactor R3 and the fourth reactor R4 have a structure in which the first exhaust path 310 and the second exhaust path 320 are shared in the chamber wall 160 .

Although Figure 12 shows the third reactor R3 and the fourth reactor R4, the same applies to the first reactor R1 and the second reactor R2. A path (eg, the second exhaust path 320 ) through which the gas exhausted from the third reactor R3 and the fourth reactor R4 is exhausted and the gas exhausted from the first reactor R1 and the second reactor R2 A path (not shown) to be exhausted communicates with each other and is connected to a main exhaust passage (not shown) and an exhaust pump (not shown). For example, as shown in FIG. 13, the first reactor R1 and the second reactor R2 may be exhausted to a main exhaust channel 170 and a main exhaust channel 170 through a third exhaust path 310' and a fourth exhaust path 320' An exhaust pump.

Figure 13 schematically shows an exhaust structure of a chamber containing the first reactor R1, the second reactor R2, the third reactor R3 and the fourth reactor R4.

In FIG. 13, the second exhaust path 320 and the fourth exhaust path 320' share the main exhaust passage 170 and the exhaust pump. The second exhaust path 320 , the fourth exhaust path 320 and the main exhaust passage 170 may be formed inside a chamber wall or outside the chamber wall. For example, an external exhaust duct can be arranged below the chamber wall. Furthermore, the diameters or dimensions of these exhaust passages are varied to maintain constant exhaust efficiency (exhaust conductance). That is, the diameter of the first exhaust passage 70 and the second exhaust passage 80 may be 1/2 of the diameter of the transmission passage 90 , and the diameter of the transmission passage 90 may be the same as that of the first exhaust passage 310 . 1/2 of the diameter. In addition, the diameter of the first exhaust path 310 and the second exhaust path 320 may be 1/2 of the diameter of the main exhaust passage 170 .

As previously described in Figures 10-13, a chamber system according to the present disclosure has a simpler external structure, making it easier to install a chamber additive, such as a plasma generator or a matcher ( matcher). Furthermore, for example, since it is not necessary to install additional elements such as a plurality of external exhaust lines in the exhaust duct to improve the uniformity of exhaust gas, weight reduction of the device can be achieved. Due to the simplification and weight reduction of the device, maintenance is made easier and operator safety is further improved.

It should be understood that the specific examples described herein should be considered in an illustrative sense only and not in a limiting sense. Descriptions of various features or aspects in each embodiment should generally be considered available for other similar features or aspects in other embodiments. Although one or more embodiments have been described with reference to the accompanying drawings, those skilled in the art will recognize that form and detail may be made therein without departing from the spirit and scope of the disclosure as defined by the following claims various changes on.

<p>9: External path <br /> 10: Chamber <br /> 13: The first exhaust port <br /> 14: Second exhaust port <br /> 15: First exhaust passage <br /> 16: Second exhaust passage <br /> 17: Junction <br /> 18: transmission channel, transmission path <br /> 18a, 18b: Transmission path <br /> 20: Support part <br /> 23: The third exhaust port <br /> 25: Third exhaust passage <br /> 26: Fourth exhaust passage <br /> 27: Second junction <br /> 28: Second transmission channel, transmission path <br /> 28a, 28b: Transmission path <br /> 30: Exhaust duct <br /> 40,40': exhaust port <br /> 50: First junction <br /> 51,51': reaction space <br /> 55,55': exhaust space <br /> 60,60': first port path <br /> 70: First exhaust passage <br /> 80: Second exhaust passage <br /> 90: Transmission channel <br /> 100: Separator <br /> 110,130: First cover body <br /> 120,140: Second cover <br /> 150: Substrate support unit <br /> 160: Chamber Wall <br /> 170: Main exhaust passage <br /> 210: Isolation valve <br /> 211: Main exhaust path <br /> 300: Connection channel <br /> 310: First exhaust path <br /> 310': Third exhaust path <br /> 320: Second exhaust path <br /> 320': Fourth exhaust path <br /> 350: exhaust space <br /> B': part <br /> C: junction <br /> C1: First corner <br /> C2: Second corner <br /> CP: connection port, the first connection port <br /> CP': connection port, the second connection port <br /> E: Clearance <br /> EC: outer path, outer channel, first outer channel <br /> EC': outer channel, second outer channel <br /> EP: Exhaust Pump <br /> FCR: Flow Control Loop <br /> G: Gap <br /> R: Reactor <br /> R1: first reactor <br /> R1a, R1b: Reactor <br /> R2: Second Reactor <br /> R3: The third reactor <br /> R4: Fourth Reactor <br /> TLD: Support Department </p>

The above and other aspects, features and advantages of certain embodiments of the present disclosure will be more apparent from the following description taken in conjunction with the accompanying drawings, wherein: <br /> FIG. 1 is a diagram of a substrate processing apparatus according to various embodiments of the disclosed concepts; <br /> FIG. 2 is a diagram of a substrate processing apparatus according to other embodiments of the disclosed concept; <br /> FIG. 3 is a plan view of the substrate processing apparatus shown in FIG. 2; <br /> FIG. 4 is a cross-sectional view of the substrate processing apparatus taken along the line IV-IV' shown in FIG. 3; <br /> FIG. 5 is a cross-sectional view of the substrate processing apparatus taken along the line VV' shown in FIG. 3; <br /> FIG. 6 is a cross-sectional view of the substrate processing apparatus taken along the line VI-VI' shown in FIG. 3; <br /> FIG. 7 is a diagram of a substrate processing apparatus according to some embodiments of the disclosed concepts; <br /> Fig. 8 is the diagram shown in Fig. 7 seen from a first direction; <br /> Fig. 9 is the view shown in Fig. 7 viewed from a second direction; and <br /> FIGS. 10-13 are diagrams of substrate processing apparatuses according to various embodiments of the disclosed concepts.

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