Azimuthal mixer

Azimuth Mixer

AZIMUTHAL MIXER

The present invention relates to equipment for supplying processing gas to the semiconductor processing gas distribution system [Cross reference to related applications] The rights of No. 62/031,769, all of its contents are included here as a reference for all purposes.

Many semiconductor manufacturing processes involve the use of gas distribution systems that use "shower heads" to distribute processing gas over the surface area of the semiconductor wafer during semiconductor processing operations. Typically, the shower head is the same diameter as the wafer being processed, or a slightly larger diameter, and contains one or more internal gas fillings and a large number of small ports. These small ports are located on the shower head facing the crystal. On one side of the circle, and leading to the inner inflatable part. The gas introduced into the internal inflation part of the shower head flows out from the internal inflation part through the small through port, thereby being distributed in the range of the semiconductor wafer. Typically, the gas system is introduced to the inner plenum of the shower head by a rod tube connected to one or more process gas sources.

In some embodiments, an apparatus for supplying processing gas to a semiconductor processing gas distribution system may be provided. The device may include a main channel, a first inflation portion substantially surrounding the main channel, a first inlet, and a plurality of first radial channels. The first inlet can be fluidly connected to the first inflatable part, and each first radial channel can span between the main channel and the first inflatable part and fluidly connect them.

In some embodiments, the first inflatable part may be annular in shape and has a central axis coaxial with the main channel.

In some embodiments, there may be three first radial channels, while in other embodiments, there may be four or more first radial channels.

In some embodiments, the plurality of first radial channels may be distributed around the main channel at substantially equal intervals.

In some other or alternative such embodiments, the device may further include a manifold block containing the following: a main channel, a first plenum, a first inlet, and a plurality of first radial channels. In such an embodiment, the equipment may also include a gas distribution shower head and a rod tube, and the rod tube may be interposed between the manifold block and the gas distribution shower head.

In some embodiments of the device, the device may further include a manifold block (the manifold block contains a main channel, a first inflator, a first inlet, and a plurality of first radial channels), and a gas distribution spray Head, and rod tube. The rod tube may include a first part and a second part. The manifold block may be located between the first part and the first part. The first end of the first part may be mated and fluidly connected with the first end of the main channel. One end can be mated and fluidly connected with the second end of the main channel (opposite to the first end of the main channel), and the second end of the second part can be configured to be connected to the gas distribution showerhead.

In some such embodiments, the first portion may include a 90 degree bend, and the main channel and the second portion may be substantially coaxial with each other. In some other such embodiments, the second part may include a 90 degree bend, and the main channel and the first part may be substantially coaxial with each other.

In some embodiments of the device, the device may further include the following: a second inflatable portion substantially surrounding the main channel, a second inlet fluidly connected to the second inflatable portion, and a plurality of second radial channels, each A second radial channel spans between the main channel and the second inflatable part and fluidly connects them.

In some such embodiments of the device, the device may further include the following: a third inflatable portion substantially surrounding the main channel, a third inlet fluidly connected to the third inflatable portion, and a plurality of third radial channels, Each third radial channel spans between the main channel and the third inflatable part and fluidly connects them.

In some embodiments of the device, the total cross-sectional area of the first radial channel may be less than one-tenth of the total cross-sectional area of the first inflatable part, and the cross-sectional area of each first radial channel may be related Estimated on a plane perpendicular to the radial direction (the first radial channel travels along the radial direction), and the total cross-sectional area of the first inflatable part can be related to the intersection and parallel with the central axis of the main channel, and include the main channel Estimated from the plane of the first inflatable part on both sides.

In some embodiments of the device, the device may further include a manifold block containing a first block and a second block. In such an embodiment, the first block and the second block can be adjacent to each other, the first radial channel can be defined by the opposing surfaces of the first block and the second block, and the first inflatable part can be defined by The first block and the second block are defined by opposite surfaces, and the first feeding through hole can fluidly connect the first inlet with the first inflatable part.

In some such embodiments of the device, the device may further include one or more additional inlets, and each additional inlet may be connected to the first feeding through hole before the first feeding through hole reaches the first inflatable portion. Fluid connection. In some further such embodiments, the first inlet and one or more additional inlets may be arranged parallel to the straight line of the main channel, and the first feeding through hole may be parallel to the main channel.

In some additional such embodiments, when the equipment is installed as part of a semiconductor processing gas distribution system, the first inlet and one or more additional inlets may be located in the first inflatable part and the main channel as the outlet of the equipment Between one end.

In some additional embodiments, the device may further include: a manifold block including a first inflation portion, a first feed through hole, a first inlet, one or more additional inlets, and a main channel ; And the heater mechanism, the heater mechanism is along at least one side of the manifold block (the non-first inlet of the manifold block, and one or more additional inlets into the side of the manifold block) and the manifold The tube block maintains thermal contact. In some such embodiments, the heater mechanism may include serpentine heating fluid flow channels.

In some embodiments, the length of the manifold block can be about 7 to 9 inches in the direction parallel to the main channel, and 2 to 3 square inches in the direction perpendicular to the parallel axis of the main channel, and the main channel diameter Approximately 0.375" to 0.75".

In some embodiments, each first radial channel may have 0.0025 in in a plane perpendicular to the radial direction (the first radial channel travels along the radial direction).²With 0.057 in²The cross-sectional area between and the first inflatable part relative to the plane intersecting and parallel to the central axis of the main channel may have 0.21 in²To 0.47 in²The total cross-sectional area between.

In some additional such embodiments, the device may further include a coaxial manifold body, which may further include a coaxial inlet, a coaxial channel, and a main channel extension. In such an embodiment, in the coaxial manifold body, the coaxial inlet can be fluidly connected with the coaxial channel, and in the coaxial manifold body, the coaxial inlet and the coaxial channel can be fluidly isolated from the main channel extension, and the main channel extends The channel may be formed (at least partially) by one or more liquid flow volumes interposed between the coaxial channel and the outer surface of the coaxial manifold body.

The details of one or more embodiments of the subject matter described in this specification are set forth in the accompanying drawings and implementations below. Other features, implementation aspects, and advantages will become apparent from the implementation manners, drawings, and claims. It should be noted that, unless otherwise specified as isometric drawings, the relative sizes of the following drawings may not be drawn to scale.

These and other embodiments of the present invention are described and illustrated with reference to several embodiments herein.

The details of one or more embodiments of the subject matter described in this specification are set forth in the accompanying drawings and implementations below. Other features, implementation aspects, and advantages will become apparent from the implementation manners, drawings, and claims. It should be noted that, unless otherwise specified as isometric drawings, the relative sizes of the following drawings may not be drawn to scale.

Wafer uniformity is an important factor in the processing of high-quality semiconductor wafers. Many factors that may affect wafer uniformity during wafer processing include: uniformity of gas distribution across the wafer, temperature distribution across the wafer, pressure imbalance across the wafer, and plasma density (if plasma is used) Distribution, presence of particles, etc. Many semiconductor equipment manufacturers (including the assignee of this application) have spent a lot of effort designing a gas distribution system that can distribute gas from one or more inlets in a more uniform manner over the surface area of the processed wafer Sprinkler.

It should be understood that, as used herein, the term "semiconductor wafer" can refer to a wafer made of semiconductor materials (for example, silicon), or a wafer made of semiconductor materials (for example, epoxy) but typically During semiconductor processing, a wafer made of materials on which semiconductor material is deposited. The apparatus and method described in this disclosure can be used in the processing of semiconductor wafers of multiple sizes, including but not limited to the following: 200mm, 300mm, and 450mm diameter semiconductor wafers .

The sprinkler head is typically designed in an axisymmetrical type, and usually has an inlet installed in the center, at which the processing gas system is introduced into the internal aeration part of the sprinkler head. In some designs, the sprinkler head may have a plurality of internal plenums, each of which is fed by a different inlet. In such a design, it is still common to center the plurality of inlets on the central axis of the shower head, for example, by using the coaxial feed arrangement of the plurality of inlets.

The inventors have found that in terms of providing uniform gas distribution, no matter how well the shower head is designed, the shower head may still be generated in the layer thickness due to the uneven gas distribution from the inlet to the shower head. Unacceptable unevenness.

The inventors obtained this finding after examining the exemplary gas distribution system shown in FIG. 1. Figure 1 is a cut-away isometric view of an exemplary gas distribution system used in semiconductor processing equipment. FIG. 1'is an isometric view of the exemplary gas distribution system of FIG. 1. FIG.

As can be seen, the gas distribution system 100 includes several elements, including a shower head 106 that can be used as a cover for a processing chamber (not shown). In this case, the shower head 106 can be fixed and positioned on the processing chamber by using several holders 108. The rod tube 104 can be used to supply processing gas to the sprinkler head inflator 126, the rod tube 104 can be coupled to the sprinkler head 106, and via the coupling 110 (only the flange features and seals that are part of the coupling 110 are shown) The flange can be compressed by a split collar holder (not shown) with an internal tapered ring groove that can be latched around the flange; of course, other types of couplings can also be used, Or in some cases, the coupler may be omitted, and the rod tube 104 may be permanently fixed to the shower head 106 and other components using welding, brazing, etc., to be coupled to a gas source (not shown).

As seen, the rod tube 104 has three inlets: a first inlet 118, a second inlet 120, and a third inlet 122. In addition to these three inlets, the rod tube 104 also has a rod feeding inlet 154. During semiconductor processing operations, different gases and gas mixtures can be made to flow through some or all of the inlets at different rates. For example, in the process studied by the inventors, 1500 sccm of Ar flows through the rod feed inlet 154, 4750 sccm of H2 flows through the first inlet 118, 2250 sccm of Ar flows through the second inlet 120, and 3400 sccm The Ar and 450 sccm of the reactant flowed through the third inlet 122.

The inventor found that the introduction of high molecular weight gas such as Ar from inlets installed on the side (for example, the first inlet 118, the second inlet 120, and/or the third inlet 122) is forcing light molecular weight gases (such as H₂, And reactant gas) to one side of the rod tube. The inventor further discovered that although the diffusion effect will make the unbalanced gas distribution in the azimuth angle in the rod tube 104 finally become evenly distributed over a period of time, it will be necessary to extend the rod tube 104 significantly. (The longer the rod tube 104 is, the more gas must flow through the rod tube in order to deliver gas to the sprinkler head), both of which are undesirable.

The inventors determined that using the gas distribution system depicted in FIG. 1, the uneven gas distribution in the azimuth angle in the rod tube 104 may cause significant unevenness in the layer thickness on the processed wafer. FIG. 2 is a contour plot showing the estimated mass fraction of processing gas on a wafer resulting from a simulated deposition operation using the exemplary gas distribution system of FIG. 1. In this analysis, the mass fraction of reactants delivered to various locations on the wafer is regarded as a representative of the thickness of the deposited layer. Therefore, if the mass fraction of the reactants transferred to the wafer area remains relatively even, the thickness of the deposited layer should also have similar uniformity. As can be seen, the simulation shows that the mass fraction of the reactants transferred, and therefore the thickness of the deposited layer, changes significantly both in the radial direction and in the ring direction. From the direction in which the gas flows into the rod feed inlet 154 (the gas flows into the rod feed inlet 145 from left to right in the figure) clockwise within a range of about 80°, the unevenness is at the maximum.

As discussed, the inventors determined that there are not only radial inhomogeneities in the simulated layer deposition, but also hoop inhomogeneities. Figure 3 is a graph showing the estimated mass fraction of the processing gas delivered to the wafer measured at three different diameters near the wafer and resulting from a simulated deposition operation using the exemplary gas distribution system of Figure 1 . In Figure 3, each series of data points represents a series of points sampled along different diameter circles on the wafer. At each data point, the y-axis represents the estimated mass fraction of the deposited reactants (thus implicitly representing the layer thickness). If all points along a circle of a given diameter have the same mass fraction, the wafer should have perfect hoop uniformity at that diameter. As can be seen, this is not the case of the simulated deposition operation described in FIG. 3. There are significant variations in the deposition mass fraction around the wafer circumference at 100mm, 196mm, and 294mm in diameter (the wafer in question is a 300mm wafer).

The inventors have discovered that, compared to the gas distribution system discussed above, introducing the processing gas into the rod tube in a specific manner can provide a significant improvement in wafer uniformity. The inventors have therefore conceived an "azimuth angle mixer" element that can be connected to the rod tube in a straight line to provide an improved azimuth angle of the processing gas introduced into the rod tube before it is introduced into the inflatable part of the shower head Mixing effect.

The azimuth mixer element may be particularly well suited to provide rapid and uniform gas distribution within a showerhead rod that does not contain internal structure at the point where the gas to be mixed is combined. In other words, the azimuth mixer element can be particularly well-suited for positions without the following: baffles, coaxial feed tubes, or other objects that can change the gas flow in the main channel of the azimuth mixer (if you want To coaxially feed, as shown in the embodiment described in FIGS. 10A to 10D, it can be implemented after the azimuth mixer).

Figure 4A is an isometric view of an exemplary gas distribution system featuring an azimuth mixer used in a semiconductor processing facility. Many of the components shown in FIG. 4A are similar to the components previously described with reference to FIG. 1 and are referred to herein by reference numbers having the same last two digits. For the sake of brevity, these elements (for example, the shower head 406 and the coupler 410) are not described again, and the reader is directed to the previous discussion of the elements to obtain further details related to such items.

What should be noted in FIG. 4A is the presence of the manifold block 402, which has replaced a part of the rod tube 404. The manifold block 402 contains an azimuth mixer, which is discussed in further detail below. It should be understood that the term "azimuth angle" as used herein refers to a direction generally perpendicular to the flow direction of the gas flowing through the rod tube (relative to the local flow direction of the gas at the point where mixing occurs).

Figure 4B is a cut-away isometric view of the exemplary gas distribution system of Figure 4A. As seen, the manifold block 402 includes a first inlet 418, a second inlet 420, a third inlet 422, and a rod feed inlet 454. The main channel 430 passes through the manifold block 402, and the main channel 430 spans between the rod feed inlet 454 and a through port on the outside of the manifold block 402 that is paired with the rod tube 404. The main channel 430 is substantially coaxial with the linear part of the rod tube 404 (paired with the main channel 430). For example, the linear part of the main channel and the rod tube 404 can be coaxial with each other until the mating piece (used to connect the rod tube 404 to The tolerance of the manifold block 402) can be tolerated. Each of the first inlet 418, the second inlet 420, and the third inlet 422 is fluidly connected to the first inflatable portion 412, the second inflatable portion 414, and the third inflatable portion 416, respectively. The term "fluid connection" is used here to indicate that the connection in question allows liquid to flow between objects so connected, for example, such objects are also "liquid connections".

Figure 4C is an exploded isometric view of the manifold block containing the azimuth mixer of Figures 4A and 4B. Figure 4C' is an unexploded isometric view of the manifold block of Figure 4C. Figure 4D is an exploded reverse isometric view of the manifold block of Figure 4C. Figure 4D' is an unexploded isometric view of the manifold block of Figure 4D.

As can be seen, the manifold block is composed of several blocks stacked together. The block may contain various liquid flow channels, O-ring grooves, inflatable parts, etc., and may be fixed together using fasteners 452. It should be understood that the azimuthal hybrid structure embodied in the manifold block can also be configured using other configurations of components (for example, blocks welded or brazed together, components produced by injection molding or casting, etc.). Such alternative embodiments are also deemed to be within the scope of the present disclosure.

There are four blocks in FIG. 4C: a first block 432, a second block 434, a third block 436, and a fourth block 438. Each of the first to fourth blocks 432, 434, 436, and 438 respectively has a hole passing therethrough. When the blocks are stacked together, the holes are connected in a line to form the main channel 430.

In this embodiment, the first block 432 and the fourth block 438 also have flanged tubular rods (for the first block 432, this flanged tubular rod is used as the rod feed inlet 454), the flange of The tubular rod extends the main channel 430 to the outside of the manifold block for coupling with other elements (for example, the rod tube 404 (shown in FIG. 4A), or a gas source (not shown)). Of course, other coupling configurations can be used instead of such flange pipes as needed (for example, female threaded holes can be provided to allow the use of male threaded fittings).

Each interface between the first to fourth blocks 432, 434, 436, and 438 can be sealed by a sealing member 428, which can be an O-ring or other suitable sealing elements. Some or all of the first to fourth blocks 432, 434, 436, and 438 may each have an annular channel surrounding the aperture of the main channel 430, respectively. When the blocks are assembled, these annular channels can form a first inflatable portion 412, a second inflatable portion 414, and a third inflatable portion 416. In some embodiments, one or more inflatable parts may not completely surround the main channel. For example, the inflatable part may have a C shape, or may be divided into a plurality of smaller inflatable parts. In such an embodiment, the inflatable part or the plural inflatable parts may substantially surround the main channel, for example, the inflatable part or the plural inflatable parts may extend as a whole around most of the circumference of the main channel; the inflatable part or the plural inflatable parts may As a whole, it extends around 60%, 70%, 80%, or more than 90% of the circumference of the main channel.

In this example, the second block 434 and the third block 436 include a first entry 418 (in the second block 434), a second entry 420 (in the third block 436), and a third entry 422 (in the third block 436). Each of these inlets can be provided by drilling a hole to the depth between the sealing member 428 and the main channel 430 in a direction perpendicular to the central axis of the main channel. The feed through holes drilled in the direction parallel to the main channel can then connect each inlet with its corresponding inflatable part. For example, the first feeding through hole 440 may fluidly connect the first inflatable part 412 with the first inlet 418, the second feeding through hole 442 may fluidly connect the second inflatable part 414 with the second inlet 420, and the first The three feeding through holes 444 can fluidly connect the third inflator 416 and the third inlet 422.

Each of the first inflatable part 412, the second inflatable part 414, and the third inflatable part 416 may be fluidly connected with the main channel 430 through a plurality of radial channels. For example, the first inflatable part 412 may be fluidly connected to the main channel 430 through a plurality of first radial channels 446, and the second inflatable part 414 may be fluidly connected to the main channel 430 through a plurality of radial channels 448. And the third inflatable part 416 can be fluidly connected with the main channel 430 through a plurality of third radial channels 450. In this example, each inflatable part is fluidly connected to the main channel through 8 radial channels.

It should be understood that although this example shows 8 radial channels for each inflatable part, a larger or smaller number of radial channels may be used. Generally speaking, the more radial channels are used to fluidly connect a specific inflator with the main channel, the faster the gas will reach a uniform distribution in the main channel. However, various practical considerations may limit the maximum number of radial channels that can be used. For example, for a given inflatable part, the total cross-sectional area of its plural radial channels (for each radial channel, measured on a plane perpendicular to the radial direction along which the radial channel travels, That is, nominally perpendicular to the flow direction of the liquid in the radial channel) is limited to the total cross-sectional area of the corresponding inflatable part (relative to the intersection with the central axis of the main channel (or the equivalent of the central axis) And measured in parallel planes; the total cross-sectional area may include one-tenth of the inflatable part located on either side of the main channel) is advantageous. Maintaining such a geometric relationship can promote uniform gas flow in each radial channel in the inflatable part. In order to keep the total cross-sectional area of the radial channels low enough to maintain the ratio, it may be necessary to limit the number of radial channels. Of course, we can also reduce the size of the radial channel (thus reducing the cross-sectional area of the radial channel), but this may be problematic from the point of view of flow restriction, and it may also be challenging for precise processing. The number of radial channels associated with each inflatable portion can be 4 or more, a two-channel configuration is unlikely to produce acceptable uniformity results, and a three-channel configuration is considered somewhat less.

In the illustrated embodiment, the radial flow channels all have a semicircular cross-section, but other cross-sectional shapes (including: circle, rectangle, triangle, etc.) can also be used. In some of these alternative embodiments, it may be necessary to use features located in two adjacent blocks to form a radial channel, for example, a diameter with a semicircular cross-section located on a mating block The directional channels can be aligned with each other to form circular radial channels when the blocks are assembled. Similarly, although the inflatable part in this embodiment is formed by the annular channel in the surface of one block and the flat surface of the other block (the flat surface is matched with the surface with the annular channel), other implementations For example, the characteristic inflatable part can be formed by two annular channels in the facing surfaces of two mating blocks, or by other structures that can provide a desired flow path.

In the embodiment shown, all radial channels have the same cross-sectional area and length, and for each inflatable part, the plural radial channels are equally spaced near the main channel, or substantially equally spaced. (For example, ±10% deviation from evenly spaced positions). However, in other embodiments, the plurality of radial channels of each inflatable part may be different in cross-sectional shape/size, length, etc. In some embodiments, equal spacing may not be used between the plurality of radial channels of a given inflator, but the radial asymmetry may adversely affect the mixing performance of the azimuth mixer.

Generally speaking, the plural radial channels associated with a specific inflatable part will all be located at the same axial position with reference to the main channel, that is to say, generally, the plural radial channels of the specific inflatable part will not be along the axial length of the main channel The direction is staggered. Therefore, the gas introduced from the plurality of radial channels of the specific inflator will flow into the main channel from the plurality of openings located in the same main channel axis position, and the gas has substantially the same flow path length in the main channel. /Mixed length.

In order to provide some cognition on the scale, various size values for the embodiment described in FIGS. 4A to 4D are provided. The overall size of the manifold block (minus the flange rods) is 4 square inches by 2.8 inches deep. The inlet diameters of the first to third inlets 418, 420, and 422 are each approximately 0.18 inches, and the main channel diameter is ~0.6 inches. The radius of the radial channels is 0.05 inches (8 radial channels are a group, so each group has ~0.03 in²The total cross-sectional area), and the volume of the inflatable part has about 0.3in²The cross-sectional area.

The manifold blocks of Figures 4A to 4D can be placed in many positions with good performance. Figure 5A is a schematic diagram of the possible positions of the manifold block relative to the sprinkler head and the rod tube. Figure 5B is a schematic diagram of another possible position of the manifold block relative to the sprinkler head and the rod tube.

As can be seen, in these specific embodiments, the rod tube 504 undergoes a 90° bend at approximately the middle of its length. This is because the specific rod tube 504 is designed to be used in a multi-station semiconductor processing tool containing a square cluster of four shower heads, all of which come from the manifold block (located in the center of the cluster) At least one processing gas is supplied. Therefore, each rod tube 504 first travels out of the central manifold in the radial direction, then bends 90 degrees and continues to travel to the center of the respective shower head 506 to supply gas to the shower head inflator 526. Of course, other rod tube designs can also be used, including straight rod tubes, single-station rod tubes, etc.

As can be seen, FIG. 5A depicts a configuration in which the manifold block 502 is located "downstream" of the 90-degree bend in the rod tube 504, that is, between the sprinkler 506 and the 90-degree bend. The dashed rectangular area in the manifold block 502 represents that the gas system is introduced into the main channel through the radial channel within this approximate range. As can be seen, the resulting mixing length 562 is shorter than that provided by the configuration of FIG. 5B, where the manifold block 502 is upstream of the 90 degree bend in FIG. 5B. However, the effectiveness of the manifold block in providing uniform gas distribution in the rod tube 504 is sufficiently high that in the process modeled by the inventors, any position appears to provide acceptable deposition uniformity. As shown in Figure 5B, if more uniform mixing is desired, the mixing length 562 can be increased by moving the manifold block to a more upstream position as necessary.

Figure 5C is a schematic diagram of another exemplary possible position of the manifold block relative to the sprinkler head and the rod tube. In this embodiment based on the different designs of the manifold block (the different designs of the manifold block are discussed in more detail later in this disclosure (see Figures 10A to 10D)), the manifold block 502 can be directly connected to the sprayhead506. Of course, this may impose a restriction on the mixing length 562, but alternative designs can still be used to increase the mixing length, for example, by including a 90° bend into the manifold block 502 itself.

As discussed above, the simulation of the gas distribution system using the manifold block discussed above shows a significant improvement in wafer deposition uniformity. Figure 6 is a graph showing the estimated mass fraction of the processing gas at three different diameters on the wafer caused by the simulated deposition operation using the manifold blocks of Figures 4C to 4D (placed in the position described in Figure 5B) Mode.

As can be seen, the simulated processing gas mass fraction in the wafer range and the thickness of the wafer deposition layer implied by it (at two places of 100mm and 196mm diameter) have almost perfect circumferential uniformity. The uniformity is greatly improved compared to the obvious circumferential non-uniformity in the simulation operation without the azimuth mixer (see Figure 3). However, there is still significant circumferential unevenness at the 294mm diameter, which is very close to the edge of the wafer (the diameter of the wafer is 300mm). Because edge effects can cause such inhomogeneities, this is not unexpected. Most areas of the wafer experience nearly perfect mass fraction uniformity. This fact strongly indicates that the unevenness of the edge position is caused by some other factors besides the unevenness of the gas distribution in the rod tube.

FIG. 7 is a contour graph showing the mass fraction of the process gas delivered to the wafer resulting from a simulated deposition operation using the manifold blocks of FIGS. 4C to 4D (placed in the position described in FIG. 5B). As can be seen, nearly 75% of the wafer surface area falls within a nearly constant mass fraction contour, which is a significant improvement when compared to the obvious unevenness in Figure 2.

Figure 8 shows the process gas delivered to the wafer at three different diameters on the wafer caused by the simulated deposition operation using the manifold blocks of Figures 4C to 4D (placed in the position described in Figure 5A) Schema of the quality score. As can be seen, the diameters of 100mm and 196mm once again exhibit nearly perfect hoop uniformity, even when the manifold block is placed closer to the downstream position of the sprinkler.

In addition to improving the uniformity of the mass fraction within the wafer range during the deposition gas transfer, the use of azimuth angles can also reduce the cleaning time, thereby allowing an increase in process throughput. FIG. 9 is a graph showing the improvement in cleaning time using an azimuth angle mixer as discussed herein compared to a rod and tube configuration without an azimuth angle mixer. As can be seen, in the case of an azimuth mixer (black line), the cleaning time for the mass fraction of reactants less than 0.001 at the wafer is ~1.75 seconds, and without the azimuth mixer, the cleaning time for the same level The cleaning time of the reactant mass fraction is ~2.7 seconds-therefore, the use of the azimuth angle mixer at this mass fraction level reduces the flushing time by 35%. If the mass fraction at the wafer is reduced to a level lower than 0.0001, using the azimuth mixer may require ~2.5 seconds of washing time, while without using the azimuth mixer, the washing time can be ~4 seconds. This represents a significant improvement in the rinse time, and this can greatly increase the process throughput, especially in processes that perform a large number of rinse cycles (for example, in an atomic layer deposition process).

Although the above discussion has focused on the azimuth mixer with three inlets (with corresponding plenums and radial channel arrays) plus rod-fed inlets, the inlets, plenums, and diameters can be included in the azimuth mixer. The number of channel arrays can be different from the example shown. For example, an azimuth angle mixer can have a single plenum, a corresponding radial channel array, and an inlet (not a rod feed inlet), or as long as it can be adapted to the length of the rod tube of the gas distribution device It can have any number of such structures within the packaging limit of the master control. Furthermore, unlike the above example, where there is only a single inlet, each inflatable part can be fed by one or more inlets (the one or more inlets can supply the same or different processing gases).

For example, these alternative configurations may allow for a smaller manifold block with increased performance and enhanced feature components, such as incorporating heating or cooling elements within the manifold block. Figure 10A is an isometric view of an azimuth mixer with an integrated heating system. Figure 10B is a cut-away isometric view of the azimuth mixer of Figure 10A. Figure 10C is an exploded cut-away isometric view of the azimuth mixer of Figure 10A. Figure 10D is an exploded cut-away reverse isometric view of the azimuth mixer of Figure 10A.

As seen in FIG. 10A, a manifold block 1002 and a coaxial manifold body 1056 are provided. The optional coaxial manifold body 1056 can be used to allow the second process gas to flow into the shower head parallel to the first process gas (provided by the manifold block 1002) through the coaxial inlet 1058, and at the same time in the first Maintain physical isolation with the second processing gas at least until the processing gases are introduced into the shower head (in some embodiments, the shower head itself can continue to maintain such isolation, and only when the first and second processing gases Once flowing from the shower head to the semiconductor wafer, they can be allowed to mix).

The manifold block 1002 is a slightly different design from the manifold block 402 previously discussed in this disclosure. For example, the manifold block 1002 includes a first inlet 1018, a second inlet 1020, a third inlet 1022, and a fourth inlet 1024. As shown, the first inlet 1018, the second inlet 1020, the third inlet 1022, and the fourth inlet 1024 may all be located in or on the common plane or common side of the manifold block 1002, and they may be linear Matrix arrangement (As you can see, each inlet including coaxial inlet 1058 is at the center of a square hole pattern. The plurality of holes of the square hole pattern may have threads to allow valve blocks or other gas supply line connection systems to be attached. Install to the manifold block 1002 or the coaxial manifold body 1056).

FIG. 10B depicts further details of the manifold block 1002 and the coaxial manifold body 1056 with a cutaway view. As can be seen, the first inlet 1018, the second inlet 1020, the third inlet 1022, and the fourth inlet 1024 are all in fluid connection with a common first feed through hole 1040, which runs in parallel to the main channel 1030 . Furthermore, the first feeding through hole 1040 is fluidly connected to the first inflatable part 1012, which is an annular channel surrounding the main channel 1030 (if you want to improve the performance, the first inflatable part 1012 can be free from the previous discussion). The size described is increased to create a total cross-sectional area of the first inflatable portion that is at least ten times larger than the total cross-sectional area of the first radial passage). A plurality of first radial channels 1046 fluidly connect the first inflator 1012 with the main channel 1030. The processing gas can flow through all or some of the first inlet 1018, the second inlet 1020, the third inlet 1022, and the fourth inlet 1024 (shown by the white arrow) until it passes through the first feed through hole 1040 and enters the first inlet 1040. An inflatable part 1012 then passes through the first radial channel 1046 and enters the main channel 1030. At the main channel 1030, there is a first inlet 1018, a second inlet 1020, a third inlet 1022, and/or a fourth inlet The gas provided by 1024 can be mixed with the gas (gray arrow) introduced through the rod feed inlet 1054. The mixed gases can flow in the direction shown along the length of the main channel 1030 until they leave the manifold block 1002. If the coaxial manifold system is attached to the outlet of the manifold block 1002, the mixed gas can flow into the gap around the coaxial channel 1060 at the coaxial position before leaving the coaxial manifold body.

Note the fact that this embodiment is characterized by a single inflator and a single set of radial channels, but has a plurality of inlets (extra rod feeding inlet 1054) that feed into the single inflator via a single feed through-hole channel. Alternative configurations may involve multiple inlets that feed into a single plenum via multiple feed through-hole channels. Regardless of how the gas supplied to the various inlets (non-rod-fed inlet 1054) reaches the main channel, after all, they must all flow through a set of radial channels that connect the inflator and the main channel. This circular transport of gas into the main channel appears to promote rapid and uniform mixing of the gas in the main channel.

10Bdepicts a schematic cross-section of the coaxial manifold body 1056, which is in a plane that intersects the coaxial inlet 1058 and is perpendicular to the central axis of the coaxial passage 1060. Figure 10B' is not drawn to scale, and some features shown in Figure 10B may be omitted. However, as can be seen, the mixed gas from the manifold block 1002 can flow through the arc-shaped channel surrounding the coaxial channel 1060. The coaxial inlet 1058 may pass through one or both of the support columns used to support the material in which the coaxial channel 1060 is located.

Because of the way the manifold block 1002 is constructed, three of the four long sides of the manifold block 1002 are relatively flat and are not clustered by fittings, inlets, etc. This allows simple integration of heating or cooling systems (for example, resistance heater plates, cooling/heating liquid conduits, etc.) so that the temperature of the manifold block 1002 can be controlled. This can help prevent condensation of the process gas in the manifold block 1002.

In the described embodiment, a heating liquid channel 1066 and a heating liquid passage 1064 (one can be used as an inlet and the other as an outlet) are included. In this case, the heating liquid channel 1066 is a pipe bent into a serpentine shape, and then placed in a correspondingly shaped channel on one side of the manifold block 1002. In other embodiments, the heating liquid channel 1066 can also travel in the range of other surfaces of the manifold block 1002 in this manner, or there can be additional heating liquid channels 1066 to do so. In some embodiments, the (plural) heating liquid channel 1066 may be an integral part of the manifold block 1022, for example, a rolled channel in the manifold block 1002 (very similar to the serpentine channel shown) can be used The plate with the inlet port/outlet port is covered so that the inlet port/outlet port is the only inlet/outlet for the liquid to the channel. Thermocouples or other temperature sensors can be located on or embedded in the manifold block 1002 to provide some form of feedback on the temperature to allow the temperature controller to increase or decrease the heating fluid channel 1066 (or Other heating systems if used) provide heat to the manifold block 1002.

In order to give some knowledge of the ratio of the embodiment pictures in FIGS. 10A to 10D, the shown manifold block 1002 is approximately 8 inches long and 2.5 square inches. The coaxial manifold block is approximately 3.2 inches long. Although the radial channel 1046 is substantially the same size as the previously discussed radial channel (refer to the manifold block 402), the first inflatable portion 1012 has a smaller cross-section of about 0.2 to 0.25 square inches.

The various configurations of the inflatable portion and the radial channel may be suitable for implementing the concept of azimuth mixing discussed herein. These configurations include, but are not limited to, the various configurations described in FIGS. 11A to 11I. Figures 11A to 11I depict cross sections cut through the various configurations of the inflatable part, the radial channel, and the main channel. Regarding the cross-sectional lines of the components, FIGS. 11A to 11I are all specified with the same symbols in accordance with the legend included on the right side of the pattern with FIGS. 11A to 11I.

FIG. 11A depicts a cross-section of an azimuth angle mixer concept in which the manifold block 1102 has a first plenum 1112 surrounding the main channel 1130. The first inlet 1118 extends to a depth in the manifold block 1102 that is sufficient to intersect the first feeding through hole 1140, and the first feeding through hole 1140 leads to the first inflatable portion 1112. The processing gas system introduced into the first inflator 1112 is guided radially and inwardly to pass through the plurality of first radial channels 1146 and enter the main channel 1130. This concept is quite similar to the basic layout of the azimuth mixer discussed in the above example.

Figure 11B depicts a cross-section of the azimuth angle mixer concept. In the azimuth angle mixer concept, there are two first inlets 1118 and two first feed through holes 1140, which deliver gas to the same first chargeDepartment1112. Except for these differences, this embodiment operates in a manner similar to the embodiment of FIG. 11A.

11C depicts a cross-section of the concept of an azimuth angle mixer. In the concept of the azimuth angle mixer, the first inlet 1118 does not use the first feeding through hole 1140, but directly leads to the first inflator 1112. Except for these differences, this embodiment operates in a manner similar to the embodiment of FIG. 11A.

Figure 11D depicts a cross-section of the azimuth angle mixer concept. In the azimuth angle mixer concept, it is very similar to the embodiment of Figure 11C. The first inlet 1118 does not use the first feed through hole 1140, but directly communicates To the first inflator 1112. However, this embodiment further includes a baffle wall 1170 between the first inlet 1118 and the first radial passage 1146. This can prevent or reduce the pressure imbalance on the radial channel, which is caused by the preference for certain radial holes in the direction of the processing gas injected into the inflator compared with other radial holes. Except for these differences, this embodiment operates in a manner similar to the embodiment of FIG. 11C.

FIG. 11E depicts a cross-section of the concept of an azimuth angle mixer in which the first inflator 1112 does not completely surround the main channel 1130. Except for these differences, this embodiment operates in a manner similar to the embodiment of FIG. 11A.

Figure 11F depicts a cross-section of the azimuth angle mixer concept, in which the first inflator 1112 is divided into two separate secondary inflators, each of which is fed by a separate first Feed through hole. Except for these differences, this embodiment operates in a manner similar to the embodiment of FIG. 11E.

Figure 11G depicts a cross-section of the azimuth angle mixer concept, in which the first inlet provides processing gas to two separate first feed through holes 1140, the two separate first feeds Each of the through holes 1140 provides processing gas to a separate secondary inflatable part of the first inflatable part 1112. Except for these differences, this embodiment operates in a manner similar to the embodiment of FIG. 11F.

Figure 11H depicts a cross-section of the concept of an azimuth angle mixer. In the concept of the azimuth angle mixer, the first radial channel 1146 does not actually follow a radial path, but is inclined with respect to the radial path. Except for these differences, this embodiment operates in a manner similar to the embodiment of FIG. 11A.

FIG. 11I depicts a cross-section of the concept of an azimuth angle mixer. In the concept of the azimuth angle mixer, the first radial channel 1146 is not linear but curvilinear, and it branches before reaching the main channel 1130. In addition to these differences (although the 6 first radial channels 1146 shown branch into 12 first radial channels before reaching the main channel 1130, the number of first radial channels 1146 is still relatively small), This embodiment operates in a manner similar to the embodiment of FIG. 11A.

The features of the various concepts shown in FIGS. 11A to 11I can be mixed with each other as desired. As can be seen, the first inflatable portion in each of FIGS. 11A to 11I substantially surrounds the main channel, but even so, in some cases, the first inflatable portion may not extend around the entire main channel, for example, It can be of type C, or it can be formed by plural, scattered parts.

Although not shown in any of the preceding figures, the shower head, the rod tube, and the manifold block described herein can be included in any semiconductor manufacturing equipment with a gas distribution system. The equipment may include a single station or a plurality of stations with the gas distribution system. The manifold block can be installed (or connected) with several valves to provide processing gas to each inlet. The valve can be connected to a controller that can control when and for how long each valve is opened. The controller can also be connected to any heating or cooling system that is part of the manifold block, and to any temperature or other sensors (the temperature or other sensors) that can be used to provide feedback to the controller. The controller may include one or more processors and a memory (the memory stores instructions used to control the following: valves, heating (or cooling) elements (if used), and any other related equipment) to Provide the desired combination of processing gases for a given semiconductor process. For example, the instruction may include: controlling the heating (or cooling) element to maintain the desired manifold block temperature (by using thermocouples or other temperature sensing that can be used to obtain feedback related to the estimated manifold block temperature) Monitor the temperature) and control the supply of processing gas to the manifold block. As discussed above, the controller may typically include one or more memory devices and one or more processors configured to execute instructions so that the device will provide processing gas as needed for a given semiconductor manufacturing process. A machine-readable medium (including instructions for controlling the operation of the process according to the present disclosure) can be coupled to the system controller.

Figure 12 depicts a high-level diagram of a semiconductor processing tool at a complex station. The described semiconductor processing tool includes at least two semiconductor processing chambers 1291, and each of the at least two semiconductor processing chambers 1291 has a shower head 1206. Each semiconductor processing chamber 1291 also includes a wafer support or pedestal 1292 that can support the wafer 1294 in the semiconductor processing chamber 1291 during wafer processing operations. The processing gas system is delivered to the shower head inflation part 1226 of each shower head 1206 through the rod pipe 1204. Each rod tube 1204 has a manifold block 1202 that includes an azimuthal mixer (as described above, connected in a straight line with the rod tube). Each manifold block may have an inlet connected to one or more process gas sources (eg, process gas sources 1286, 1288, and 1290). The rod tube 1204 can be connected to the first gas source 1284, which transfers (plural) processing gas to the main channel of each manifold block 1202. The controller 1282 may be communicatively connected with a valve or other gas flow control element, for example, may be attached to the manifold block 1202.

The above-mentioned equipment/processes can be used in combination with lithographic patterning tools or processes, for example for processing or manufacturing semiconductor devices, displays, light emitting diodes (LEDs), photovoltaic panels, and the like. Although not necessarily, the tool/process will typically be used or performed in a common processing facility. The lithographic patterning of the film typically includes part or all of the following steps. Each step is achieved by using several possible tools: (1) Using spin coating or spraying tools to apply photoresist to the workpiece, that is, the substrate; (2) Use a hot plate, oven, or UV curing tool to cure the photoresist; (3) Use a tool such as a wafer stepper to expose the photoresist to visible light, or ultraviolet light, or X-ray light; (4) ) Develop the photoresist to selectively remove the photoresist, thereby patterning it with tools such as a wet stage; (5) By using dry or plasma-assisted etching tools, the photoresist pattern is transferred to the underlying film or Inside the workpiece; and (6) Use a tool such as a radio frequency or microwave plasma photoresist stripper to remove the photoresist.

We will also understand that, unless they are clearly marked as incompatible with each other, or the surrounding context means that they are mutually exclusive and cannot be easily used as complements and/or support. The specific features of the complementary embodiments can be selectively combined to provide one or more broad but slightly different technical solutions. Therefore, we will better understand that the above description has been presented by way of illustration only, and detailed modifications can be made within the scope of the present disclosure.

<p>100Gas Distribution System</p><p>104Rod tube</p><p>106Spray head</p><p>108Gripper</p><p>110Connector</p><p>118First entrance</p><p>120Second Entrance</p><p>122Third Entrance</p><p>126Spray head inflation part</p><p>154Pole feed entrance</p><p>400Gas Distribution System</p><p>402Manifold Block</p><p>404Rod tube</p><p>406Spray head</p><p>408Gripper</p><p>410Coupler</p><p>412The first inflatable part</p><p>414Second inflatable part</p><p>416The third inflatable part</p><p>418First Entrance</p><p>420Second Entrance</p><p>422Third Entrance</p><p>428Seal</p><p>430Main channel</p><p>432The first block</p><p>434Second block</p><p>436Block 3</p><p>438Block 4</p><p>440The first feed-in through hole</p><p>442Second feed through hole</p><p>444Third feed through hole</p><p>446First radial channel</p><p>448Radial channel</p><p>450Radial channel</p><p>452Fastener</p><p>454Pole feed entrance</p><p>502Manifold Block</p><p>504Rod tube</p><p>506Spray head</p><p>526Sprinkler head inflation part</p><p>562Mixed length</p><p>1002Manifold block</p><p>1012The first inflatable part</p><p>1018First entrance</p><p>1020Second Entrance</p><p>1022Third Entrance</p><p>1024Fourth entrance</p><p>1028Seal</p><p>1030Main channel</p><p>1040Feeding through hole</p><p>1046The first radial channel</p><p>1052Fastener</p><p>1054Pole feed entrance</p><p>1056Coaxial manifold body</p><p>1058Coaxial entrance</p><p>1060Coaxial channel</p><p>1064Heating liquid port</p><p>1066Heating liquid channel</p><p>1102Manifold Block</p><p>1112The first inflatable part</p><p>1118First entrance</p><p>1130Main channel</p><p>1140First feed through hole</p><p>1146First radial channel</p><p>1170Baffle wall</p><p>1202Manifold Block</p><p>1204Rod tube</p><p>1206Spray head</p><p>1226Spray head inflation part</p><p>1291Processing chamber</p><p>1292Wafer support or base</p><p>1294wafer</p><p>1282Controller</p><p>1284First gas source</p><p>1286Processing gas source</p><p>1288Processing gas source</p><p>1290Processing gas source</p>

Figure 1 is a cut-away isometric view of an exemplary gas distribution system used in semiconductor processing equipment.

FIG. 1'is an isometric view of the exemplary gas distribution system of FIG. 1. FIG.

FIG. 2 is a contour plot showing the estimated mass fraction of processing gas on a wafer resulting from a simulated deposition operation using the exemplary gas distribution system of FIG. 1.

Figure 3 is a graph showing the estimated mass fraction of the processing gas delivered to the wafer measured at three different diameters near the wafer and resulting from a simulated deposition operation using the exemplary gas distribution system of Figure 1 .

Figure 4A is an isometric view of an exemplary gas distribution system featuring an azimuth mixer used in a semiconductor processing facility.

Fig. 4B is an isometric cut-away view of the exemplary gas distribution system of Fig. 4A.

Figure 4C is an exploded isometric view of the manifold block containing the azimuth mixer of Figures 4A and 4B.

Figure 4C' is an unexploded isometric view of the manifold block of Figure 4C.

Figure 4D is an exploded reverse isometric view of the manifold block of Figure 4C.

Figure 4D' is an unexploded isometric view of the manifold block of Figure 4D.

Figure 5A is a schematic diagram of the possible positions of the manifold block relative to the sprinkler head and the rod tube.

Figure 5B is a schematic diagram of another possible position of the manifold block relative to the sprinkler head and the rod tube.

Figure 5C is a schematic diagram of another exemplary possible position of the manifold block relative to the sprinkler head and the rod tube.

Figure 6 is a graph showing the mass fraction of the processing gas at three different diameters on the wafer caused by the simulated deposition operation using the manifold blocks of Figures 4C to 4D (placed in the position described in Figure 5B) .

FIG. 7 is a contour graph showing the mass fraction of the process gas delivered to the wafer resulting from a simulated deposition operation using the manifold blocks of FIGS. 4C to 4D (placed in the position described in FIG. 5B).

Figure 8 shows the process gas delivered to the wafer at three different diameters on the wafer caused by the simulated deposition operation using the manifold blocks of Figures 4C to 4D (placed in the position described in Figure 5A) Schema of the quality score.

FIG. 9 is a graph showing the improvement in cleaning time using an azimuth angle mixer as discussed herein compared to a rod and tube configuration without an azimuth angle mixer.

Figure 10A is an isometric view of an azimuth mixer with an integrated heating system.

Fig. 10B is an isometric cut-away view of the azimuth mixer of Fig. 10A.

Figure 10B' depicts a schematic cross-section of the coaxial manifold body, which is in a plane that intersects the coaxial inlet and is perpendicular to the central axis of the coaxial channel.

Figure 10C is an exploded isometric cut-away view of the azimuth mixer of Figure 10A.

Fig. 10D is an exploded reverse isometric cut-away view of the azimuth mixer of Fig. 10A.

Figures 11A to 11I depict cross-sections through various configurations of the inflatable portion, the radial channel, and the main channel.

Figure 12 depicts a high-level diagram of a semiconductor processing tool at a complex station.

Although the scale of each figure will be different, figures 1, 4A to 4D, and 10A to 10D (except 10B') are drawn according to the scale in each figure.

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