High-frequency circuit device

High frequency circuit device

The present invention relates to high-frequency wireless devices, particularly to high-frequency circuit devices in the signal transmission and reception parts of mobile communication devices such as mobile phones, and particularly to semiconductor amplifier circuits with high-frequency power transmission (hereinafter referred to as transmission Amplifying circuit), and switching circuit (used to switch multiple communication methods, multiple frequency bands) multi-frequency high-frequency circuit device.

For mobile phones, etc., in terms of systems where the European TDMA (Time Division Multiple Access) method and CDMA (Code Division Multiple Access) method coexist, it is important to transmit high-frequency power from the antenna. The transmission amplifier circuit uses high-frequency amplifiers corresponding to the TDMA method and the CDMA method respectively. The reason is that in addition to the different output levels, even the TDMA method, such as EDGE (Enhanced Data rates for GSM Evolution: GSM enhanced data transfer rate) modulation method for polar modulation or polar loop (polar loop) Modulation, due to the CDMA method, especially the W-CDMA (Wideband-Code Division Multiple Access) method or UMTS (Universal Mobile Telecommunication System) to make the orthogonal modulation action, A linear amplifier is required and signals must be sent and received at the same time. Therefore, separate high-frequency amplifiers are used in the TDMA and CDMA systems.

Fig. 6 is a block diagram showing a configuration example of a conventional high-frequency circuit device. As shown in Figure 6, in the high-frequency amplifier 3 of the transmission amplifier circuit, the phase signal GSM PS Tx of the GSM (Global System for Mobile communications) system in the 800~900MHz frequency band of the TDMA method is input and amplified. In addition, in the high frequency amplifier 5 of the transmission amplifier circuit, input the phase signal DCS/PCS of the DCS (Digital Cellular System) or PCS (Personal Communication System) in the 1700~1900MHz frequency band of the CDMA method PS Tx and zoom in.

On the other hand, in order to perform polarity modulation, the amplitude signals of GSM and DCS/PCS are input to the power supply terminals of the high-frequency amplifiers 3 and 5 from the two power supply amplitude modulators 23, respectively. At this time, the high-frequency amplifiers 3 and 5 of the polarity modulation action can be realized by the high-frequency amplifiers 3 and 5 of the saturation action, so the current consumption can be reduced, and even without an insulator, the output impedance of the high-frequency amplifier is also There is almost no chaotic movement.

On the other hand, as for the operation of the UTMS (W-CDMA) method, the conventional system inputs the quadrature modulated signal to the high-frequency amplifier 2. At this time, the high-frequency amplifier 2 is different from the high-frequency amplifiers 3 and 5 of the polarity modulation operation in that not only a linear-acting high-frequency amplifier is required, but also an insulator 9 must be provided on its output side. In the high-frequency amplifier 2, the quadrature-modulated signal of UTMS is input through the driving amplifier 17, and it passes through a low-pass filter (LPF) 8, an insulator 9, a duplexer (DUP) 10, and a GaAs switch 7. Supply to antenna 4. The duplexer (DUP) 10 is a filter distinguished by frequency band for simultaneous transmission and reception of signals.

In addition, the insulator 9 shifts the impedance from 50 ohms when the antenna 4 is close to the head of a metal or a person, so as to prevent the operation of the high-frequency amplifier 2 from deteriorating the distortion characteristics. The high-frequency amplifiers 2, 3, and 5 are composed of GaAs FET, HBT (heterobipolar transistor), Si MOSFET, or SiGe HBT.

A GaAs switch 7 is provided between the antenna 4, each high-frequency amplifier, and each receiving circuit to switch between GSM or DCS/PCS transmission and reception, or switch to UMTS to send and receive signals at the same time. GaAs switch 7 is also composed of PIN-type diodes, and most of them are made of LPF8 (for suppressing high harmonics of high-frequency amplifiers 2, 3, and 5) and switch modules that are integrated with these switch circuits. become. In addition, there are cases where the entire high-frequency amplifier circuit is provided as a Tx module 20 to be modularized.

However, in the conventional configuration, compared with the case of a conventional mobile phone dedicated to one party where the TDMA and CDMA methods do not coexist, not only the cost is increased by 50% due to the need for multiple high-frequency amplifiers, but also an isolator is required for UTMS. 9 This leads to a further increase in cost of 50%, that is, a problem of nearly 2 times increase in cost. In addition, due to the insulator 9, the high-frequency amplifier 2 consumes an additional current of 40 to 70 mA.

In view of the above-mentioned problems, the purpose of the present invention is to provide a low-cost, low-power high-frequency circuit device corresponding to both the TDMA method and the CDMA method and complex frequency bands.

To achieve the foregoing objective, the high-frequency circuit device of the present invention corresponds to two communication methods and multiple frequency bands: Time Division Multiple Access (TDMA) and Code Division Multiple Access (CDMA), and is characterized by: The amplifier circuit is composed of a high-frequency amplifier that shares the TDMA method and the CDMA method to transmit high-frequency power from the antenna; a duplexer uses the CDMA method to achieve simultaneous transmission and reception of signals; the front and back switch circuits, Hold the duplexer between each other and set it between the transmission amplifying circuit and the antenna, and turn on (ON) when the CDMA method is used to receive signals at the same time; and a bypass switch circuit for the The front and back switch circuits are bypassed with the duplexer.

According to this structure, compared with the conventional mobile phone dedicated to one party in which the TDMA method and the CDMA method do not coexist, not only the number of high-frequency amplifiers can be reduced, but also the isolator can be further omitted, so the cost can be reduced by half. In addition, it can also reduce the current of high-frequency amplifiers such as UMTS and other CDMA operations by 20%, that is, about 40~70mA.

Hereinafter, the preferred embodiments of the present invention will be described with reference to the drawings.

(First Embodiment)

Fig. 1 is a block diagram showing a configuration example of a high-frequency circuit device according to the first embodiment of the present invention.

First, as shown in Fig. 1, in the first high frequency amplifier 3 of the transmission amplifier circuit, a GSM phase signal GSM PS Tx in the 800-900 MHz frequency band is input and amplified. In addition, the second high-frequency amplifier 22 of the transmission amplifying circuit inputs and amplifies the phase signal Tx of DCS, PCS, or UMTS (W-CDMA) in the 1700-2100 MHz band. The second high-frequency amplifier 22 is provided with a drive amplifier 17 capable of gain control to perform dynamic range amplification of the UMTS signal of the CDMA method.

On the other hand, in order to perform polarity modulation, the amplitude signals AS Tx of GSM and DCS/PCS are input to the power terminals of the first high-frequency amplifier 3 and the second high-frequency amplifier 22 from the power amplitude modulator 23, respectively. At this time, the first high-frequency amplifier 3 and the second high-frequency amplifier 22 of the polarity modulation operation can be realized by the high-frequency amplifier of the saturation operation, so a very wide-band amplifier can be realized. Known linear amplifiers become unnecessary.

In addition, since the second high-frequency amplifier 22 becomes a high-frequency amplifier corresponding to UMTS (for polarity modulation), the current consumption can be reduced. In order to change the polarity, UMTS uses the current high-frequency semiconductor technology to use the duplexer (duplexer) 10 (to avoid removing the high-frequency action of the conventional power amplitude modulator 23 and the insulator described below when the frequency is different from other frequencies. Influence) design can be realized.

Here, the output signal of the second high-frequency amplifier 22 is input to the duplexer (DUP) 10 through the coupler 15, the LPF 8, and the front-stage switch circuit (SW) 25. The duplexer 10 is a filter distinguished by frequency band for simultaneous transmission and reception of signals. When the antenna 4 is close to a metal or a human head, the impedance is shifted from 50 ohms, and the deterioration of the distortion characteristics due to the UMTS operation of the second high-frequency amplifier 22 can be avoided by a polarity modulation operation.

However, in order to further avoid adverse effects caused by other mobile phones or base station DCS transmission or reception signals from the antenna 4 backflow to the second high-frequency amplifier 22, the duplexer 10 also has the ability to suppress the DCS transmission or reception signal frequency band Therefore, the suppression function of the conventional insulator can be realized, and the insulator can be omitted.

In addition, in order to perform the switching of DCS or PCS transmission or UMTS simultaneous transmission and reception signals, a bypass switch circuit 26 is provided between the antenna 4 and the second high-frequency amplifier 22 to bypass the duplexer 10. Furthermore, a back switch circuit 27 is also provided between the duplexer 10 and the antenna 4 to switch between UMTS operation or not.

Here, GaAs FET, HBT (heterobiological bi-carrier transistor), Si MOSFET, or SiGe HBT are used as high-frequency amplifiers. In addition, in order to switch between the first high-frequency amplifier 3 for GSM transmission, GSM, DCS, or PCS reception, a switch circuit 24 connected to the antenna 4 is provided, which is the same as the conventional one. The switching circuits 24, 25, 26, and 27 are high frequency switches (SW) using GaAs. In addition, the high-frequency switch is also composed of PIN-type diodes and used to suppress the high harmonics of the high-frequency amplifiers. Most of the high-frequency switches are integrated with these switch circuits to form the switch module 6. In addition, the entire high-frequency amplifier circuit may also be modularized with the Tx module 20. In addition, since the duplexer 10 can be provided with a function for suppressing the harmonics of the second high-frequency amplifier 22, the LPF 8 on the side of the second high-frequency amplifier 22 can be omitted. The same applies to other embodiments.

As described above, according to this embodiment, compared with the conventional example, since the number of high-frequency amplifiers can be reduced from three to two, and the insulator can also be omitted, the cost can be reduced by about half. In addition, the current of the second high-frequency amplifier 22 for CDMA operations such as UMTS can be reduced by 20%, that is, about 40 to 70 mA.

(Second Embodiment)

Fig. 2 is a block diagram showing a configuration example of a high-frequency circuit device according to a second embodiment of the present invention.

In FIG. 2, the present embodiment discloses a specific circuit configuration in which GaAs switches 7 are used for the switch circuits 24 to 27, compared with the first embodiment. As far as GaAs switches are concerned, HEMT (High Electron Mobility Transistor) is used, especially the gate length is made into submicron particles, so as to compare with PIN diodes. The loss can be reduced from 0.3dB to 0.4dB, and the current consumption of the high-frequency amplifier can be reduced by about 10%.

(Third Embodiment)

Fig. 3 is a block diagram showing a configuration example of the high-frequency circuit device of the third embodiment of the present invention.

First, as shown in FIG. 3, compared to the first embodiment of the present invention, when the UMTS is operating, the UMTS transmits a signal, and the second high-frequency amplifier 22 side does not exist before the switch circuit 25, and the transmitted signal is from The second high-frequency amplifier 22 is directly input to the duplexer (DUP) 10. The duplexer 10 has the characteristic of suppressing the frequency band of the DCS transmission or reception signal. Thereby, the suppression function exerted by the conventional insulator can be realized, and the insulator can be omitted. Furthermore, by observing the antenna 4 side from the second high-frequency amplifier 22, the output impedance of the DCS or PCS operation can be increased. By adjusting the matching of the second high-frequency amplifier 22, it is possible to observe from the second high-frequency amplifier 22 The output impedance of the DCS or PCS action on the antenna 4 side is set to 50 ohms.

That is, if the DCS or PCS transmission operation is not the UMTS operation, if the downstream switch circuit 27 is turned off (OFF) and the bypass switch circuit 26 is turned on (ON), the DCS or PCS transmission operation can be performed. In addition, when UMTS signals are simultaneously transmitted and received, if the downstream switch circuit 27 is turned on (ON) and the bypass switch circuit 26 is turned off (OFF), the simultaneous transmission and reception of UMTS signals can also be implemented as in the first embodiment of the present invention. The same effect in form.

As described above, according to this embodiment, compared with the first embodiment, one switching circuit can be reduced.

In addition, in the first to third embodiments, although it is illustrated that GMSK/GPRS/EDGE modulation is performed in the GSM/DCS/PCS frequency band, and the UMTS (W-CDMA) method is added as the CDMA method to these TDMA methods However, in the case of GMSK/GPRS/EDGE modulation in the GSM/DCS/PCS frequency band, and compared to these TDMA methods, the addition of the 1700~1900MHz frequency band of the DCS/PCS method as the CDMA method in the narrow-band CDMA method In this case, not only can UMTS become a narrowband CDMA method, but also the circuit configuration is completely the same. It can be seen that the first to third embodiments are completely the same.

(Fourth Embodiment)

Fig. 4 is a block diagram showing a configuration example of a high-frequency circuit device according to a fourth embodiment of the present invention.

As shown in Figure 4, in the first to third embodiments, although it has been explained that GMSK/GPRS/EDGE modulation is performed in the GSM/DCS/PCS frequency band, and compared to these TDMA methods, UMTS (W-CDMA) is added. The method is the CDMA method. However, in the fourth embodiment, it is explained that GMSK/GPRS/EDGE modulation is performed in the GSM/DCS/PCS frequency band, and compared to these TDMA methods, the narrowband CDMA method is added as GSM The 800~900MHz frequency band of the method is used as the CDMA method.

In Fig. 4, in the first high-frequency amplifier 3 of the transmission amplifier circuit, the phase signal DCS/PCS PS Tx of the DCS/PCS in the frequency band of 1700~1900MHz is inputted and amplified. In addition, the second high-frequency amplifier 22 of the transmission amplifying circuit inputs and amplifies the phase signal GSM/CDMA PS Tx of GSM/Narrowband CDMA in the 800-900 MHz frequency band. The second high-frequency amplifier 22 is provided with a drive amplifier 17 capable of gain control to perform dynamic range amplification of the CDMA method.

On the other hand, in order to perform polarity modulation, the amplitude signals AS Tx of GSM/CDMA and DCS/PCS are respectively input from the power supply amplitude modulator 23 to the power supply terminals of the first high-frequency amplifier 3 and the second high-frequency amplifier 22.

Here, the output signal of the second high-frequency amplifier 22 is input to the duplexer (DUP) 10 through the coupler 15, the LPF 8, and the front-stage switch circuit (SW) 25. The duplexer 10 is a filter distinguished by frequency band for simultaneous transmission and reception of signals. When the antenna 4 is close to a metal or a human head, the impedance is shifted from 50 ohms, and the deterioration of the distortion characteristics due to the UMTS operation of the second high-frequency amplifier 22 can be avoided by a polarity modulation operation.

In addition, in order to switch between GSM transmission and CDMA simultaneous transmission and reception, a bypass switch circuit 26 is provided between the antenna 4 and the second high-frequency amplifier 22 to bypass the duplexer 10. Furthermore, a back-end switch circuit 27 is also provided between the duplexer 10 and the antenna 4 to switch between CDMA operation or not.

In addition, in order to switch between GSM transmission or CDMA simultaneous transmission and reception, a switch circuit 24 connected to the antenna 4 is provided, which is the same as the prior art. The switching circuits 24, 25, 26, and 27 are high frequency switches (SW) using GaAs. In addition, the high-frequency switch is also composed of PIN-type diodes and used to suppress the high harmonics of the full-frequency amplifiers. Most of them are integrated with these switch circuits to form the switch module 6. In addition, the entire high-frequency amplifier circuit may also be modularized with the Tx module 20.

As described above, according to this embodiment, compared with the conventional example, since the number of high-frequency amplifiers can be reduced from three to two, and the insulator can also be omitted, the cost can be reduced by about half. In addition, the current of the second high-frequency amplifier 22 for CDMA operations such as UMTS can be reduced by 20%, that is, about 40 to 70 mA.

(Fifth Embodiment)

Fig. 5 is a block diagram showing a configuration example of the high-frequency circuit device of the fifth embodiment of the present invention.

As shown in Figure 5, in the first to fourth embodiments, although it has been explained that GMSK/GPRS/EDGE modulation is performed in the GSM/DCS/PCS frequency band, and compared to these TDMA methods, UMTS (W-CDMA) is added. However, in the fifth embodiment, it is explained that GMSK/GPRS/EDGE modulation is performed in the GSM/DCS/PCS frequency band, and UMTS is added to these TDMA methods. When the GSM frequency band of 1700~1900MHz frequency band and 800~900MHz frequency band are used as the CDMA method as the narrowband CDMA method, the circuit configuration of both the TMDA method and the CDMA method is exactly the same. The same configuration can be achieved in the 1700~1900MHz frequency band, and the effect is that only two of the four required high-frequency amplifiers can be used, and the first high-frequency amplifier 3 can have the same configuration as the second high-frequency amplifier 22 used as the driving amplifier 17.

The high-frequency circuit device of the present invention has the advantages of low cost and low power consumption. For mobile phone systems where TMDA and CDMA coexist, especially for GSM/DCS/PCS/GPRS/EDGE and UMTS, GSM/DCS/PCS Mobile phones with /GPRS/EDGE and narrowband CDMA, or GSM/DCS/PCS/GPRS/EDGE coexisting with UMTS and narrowband CDMA are extremely useful.

<p>2. . . Corresponding to UMTS high frequency amplifier</p><p>3. . . The first high frequency amplifier corresponding to GSM</p><p>4. . . antenna</p><p>5. . . The second high frequency amplifier corresponding to DCS/PCS</p><p>6. . . Switch module</p><p>7. . . GaAs switch</p><p>8. . . Low pass filter (LPF)</p><p>9. . . Insulator</p><p>10. . . Diplexer</p><p>11. . . Surface Elastic Wave Filter (SAW)</p><p>12. . . Low Noise Amplifier (LNA)</p><p>15. . . Coupler</p><p>20. . . Tx module</p><p>twenty two. . . Corresponding to the second high frequency amplifier of DCS/PCS/UMTS</p><p>twenty three. . . Power modulator</p><p>twenty four. . . Switch circuit</p><p>25. . . Front switch circuit (for UMTS/CDMA transmission)</p><p>26. . . Switch circuit for bypass</p><p>27. . . Back switch circuit (for UMTS/CDMA transmission and reception)</p>

Fig. 1 is a block diagram showing a configuration example of a high-frequency circuit device according to the first embodiment of the present invention.

Fig. 2 is a block diagram showing a configuration example of a high-frequency circuit device according to a second embodiment of the present invention.

Fig. 3 is a block diagram showing a configuration example of the high-frequency circuit device of the third embodiment of the present invention.

Fig. 4 is a block diagram showing a configuration example of a high-frequency circuit device according to a fourth embodiment of the present invention.

Fig. 5 is a block diagram showing a configuration example of the high-frequency circuit device of the fifth embodiment of the present invention.

Fig. 6 is a block diagram showing a configuration example of a conventional high-frequency circuit device.