Light emitting display device, method for manufacturing the same, and TV set

Light-emitting display device, method of manufacturing light-emitting display device and television

The present invention relates to a light-emitting display device (light-emitting device) using a droplet discharge method and a manufacturing method thereof.

Thin film transistors (hereinafter referred to as "TFT") and circuits using thin film transistors are formed by laminating various types of thin films of semiconductors, insulating materials, conductive materials and similar materials on a substrate and then appropriately formed by photolithography Manufactured by predetermined patterns. Photolithography refers to the use of light transfer by using a material that does not transmit light to form a pattern of a circuit or similar path on the surface of a transparent plane called a photomask to a target substrate, and this technology has been widely used Ground is used in the manufacturing steps of semiconductor integrated circuits or similar circuits.

In the conventional manufacturing steps of photolithography, it needs to implement multi-stage steps including exposure, development, baking, peeling and similar functions. This step is only used for processing by using a photosensitive organic film called photoresist. Mask pattern formed by resin material. Therefore, as the number of photolithography steps increases, manufacturing costs inevitably increase. In order to improve the above-mentioned problem, it has been tried to manufacture TFTs by reducing the number of photolithography steps (for example, Previous Case 1: Japanese Prior Publication No. H11-251259).

However, in the technology disclosed in the previous case 1, the photolithography step performed several times in the TFT manufacturing step is replaced by a printing method, and it does not help to completely reduce the number of steps. Furthermore, the exposure equipment used to transfer the mask pattern by photolithography will transfer patterns from several micrometers to 1 micrometer or smaller by equivalent projection exposure or reduced projection exposure. From a technical point of view, it is theoretically difficult for the exposure equipment to simultaneously expose large-area substrates with sides larger than 1 meter to light.

The object of the present invention is to provide a technique in which, in the manufacturing steps of TFTs, circuits using TFTs, or light-emitting display devices formed by using TFTs, the manufacturing steps are performed by reducing the number of photolithography steps or by It is simplified by eliminating its own photolithography step, and manufacturing can be performed on a large-area substrate with a side edge greater than 1 meter with higher yield and lower cost.

The following considerations are adopted in the present invention to solve the above-mentioned related technical problems.

A feature of the present invention is that at least one or more of the patterns required to manufacture the display panel, such as a wiring layer, a conductive layer for forming an electrode, or a mask layer for forming a predetermined pattern, and/or by being able to select And then, the light-emitting display device is manufactured. A droplet discharge method (also called an inkjet method, depending on the mode) that can form a conductive layer, an insulating layer, or the like into a predetermined pattern by selectively discharging droplets for a special purpose mixed composition is used as A method capable of selectively forming patterns. Furthermore, a method capable of transferring or drawing a pattern, for example, a printing method (a method for forming a pattern such as screen or lithography) or the like may also be used.

The present invention is a light-emitting display device, wherein the light-emitting element has a medium including an organic material or a mixture of an organic material and an inorganic material between the electrodes, and the medium causes light emission called electroluminescence (hereinafter also referred to as "EL"). The light-emitting element and the TFT are connected, and this light-emitting display device is manufactured using a droplet discharge method.

According to the present invention, improving the viscosity means (bottom pretreatment) applied to the patterned area by the droplet discharge method, thereby improving the reliability of the light-emitting display device.

Another feature of the present invention is that the substrate constituting the light-emitting display device, such as wiring, semiconductor film, insulating film or mask, is formed by using the photocatalyst activity of a substrate having a photocatalyst function (hereinafter referred to as a photocatalyst substance). When the predetermined pattern is formed in this step by discharging droplets including the predetermined composition from the pores, a substance having a photocatalyst function is formed as a substrate, and the photocatalyst activity is used to improve the viscosity. In particular, a wiring material mixed with a solvent (including a wiring material (conductive material) dissolved or dispersed in a solvent) is formed on the photocatalyst substance or on the opposite end thereof by a coating method or the like, thereby forming wiring. For example, the conductive material mixed with the solvent is discharged onto the photocatalyst substance by the droplet discharge method. In addition to the droplet discharge method, the conductive material mixed with the solvent can also be formed by a spin coating method, a dipping method, other coating methods, or a printing method (a method for forming patterns such as screen printing or lithography) On the photocatalyst substance.

Preferably use titanium oxide (TiOx), strontium titanate (SrTiO₃), cadmium selenide (CdSe), potassium tantalate (KTaO₃), cadmium sulfide (CdS), zirconium oxide (ZrO₂), niobium oxide (Nb₂O₅), zinc oxide (ZnO), iron oxide (Fe₂O₃), tungsten oxide (WO₃)) or similar elements as photocatalyst substances. The photocatalyst substance can be irradiated with light in the ultraviolet light region (wavelength: 400 nm or less, preferably 380 nm or less) to activate the photocatalyst.

The photocatalyst material can be immersed coating method, spin coating method, droplet discharge method, ion plating method, ion beam method, CVD method, sputtering method, RF magnetron electrosputtering method, electric It is formed by the immersion coating method of slurry spraying method or anodizing method. Furthermore, depending on its forming method, the substrate does not need to have continuity like a film. In the example of a photocatalyst substance made of an oxide semiconductor including several metals, the photocatalyst substance can be formed by mixing and melting salts of constituent elements. When it needs to be removed in the case of forming a photocatalyst substance, the solvent can be baked and dried by a coating method such as an immersion coating method or a spin coating method. In particular, it can be preferably heated at a predetermined temperature (for example, 300°C or higher) in an oxygen-containing atmosphere. For example, baking is performed in an atmosphere containing oxygen and nitrogen using silver as a conductive paste; then, organic materials such as thermosetting resins are decomposed. Therefore, silver without organic materials can be obtained. Therefore, the planarization on the surface of the silver can be enhanced.

According to this heat treatment, the photocatalyst substance can have a predetermined crystal structure. For example, it has an anatase type or a rutile/anatase mixed type. The anatase type is preferably formed in the low temperature phase. Therefore, when the photocatalyst substance does not have a predetermined crystal structure, the photocatalyst substance can also be heated. Furthermore, the photocatalyst substance can be formed several times to obtain a predetermined film thickness in the example formed by the coating method.

For example, TiOx is not hydrophilic but lipophilic, that is, it is water-repellent before being irradiated with light. Light irradiation causes photocatalyst activity, and TiOx can be converted into hydrophilic and non-lipophilic, that is, oil repellency. Note that TiOx can immediately become hydrophilic and lipophilic depending on the length of the irradiation time.

Note that "hydrophilic" means a state that is easily wetted with water and has a contact angle of 30 degrees or less. In particular, the state having a contact angle of 5 degrees or less is called "super-hydrophilicity". On the other hand, "water repellency" means a state that is difficult to get wet with water and has a contact angle of 90 degrees or more. Similarly, "lipophilic" means a state that is easy to get wet with oil, and "oil repellency" means a state that is hard to get wet with oil. Note that the contact angle means the angle formed by the tangent to the droplet on the edge of the forming surface and the drop point.

In other words, the area irradiated with light (hereinafter referred to as the irradiated area) becomes hydrophilic or superhydrophilic (collectively abbreviated as hydrophilic). At this time, light irradiation is performed so that the width of the irradiated area is the desired width of the wiring. Thereafter, the dots including the conductive material mixed into the water-based solvent are discharged from above the irradiation area to the irradiation area by a droplet discharge method. Then, a wiring with a smaller width, that is, a wiring narrower than the diameter of a dot discharged only by the droplet discharge method can be formed. This is because the irradiation area is formed to have a desired width of the wiring, and then, the discharged dots can be prevented from being scattered on the forming surface. Furthermore, even in the case where the dots are discharged and deviated to a certain extent, the wiring may be formed along the irradiation area. Therefore, the position of the wiring to be formed can be accurately controlled.

In the case of using a water-based solvent, it is preferable to add a surfactant to smoothly discharge the droplets from the nozzle of the inkjet device.

In the example of discharging the composition (conductive material) mixed into an oil-based (alcohol-based) solvent, the wiring can be discharged by discharging the composition (conductive material) onto the area not irradiated with light (hereinafter referred to as non-irradiation). Area) and the above-mentioned non-irradiated area is discharged to the non-irradiated area and formed in the same way. In other words, the opposite end of the area of the pattern (wiring) to be formed, that is, the periphery of the area surrounding the wiring to be formed, can be irradiated with light, thereby forming an irradiated area. Because the irradiated area is oil-repellent at this time, dots including the conductive material mixed into an oil (alcohol-based) solvent are selectively formed in the non-irradiated area. In other words, light irradiation can be performed so that the width of the non-irradiated area is the desired width of the wiring.

Note that non-polar solvents or low-polarity solvents can be used as oil (alcohol-based)-based solvents. For example, sesame oil, mineral spirits, xylene, toluene, ethylbenzene, trimethylbenzene, hexane, heptane, octane, decane, dodecane, cyclohexane or cyclooctane may be used.

Furthermore, photocatalyst activation can be enhanced by incorporating transition metals (such as Pd, Pt, Cr, Ni, V, Mn, Fe, Ce, Mo, or W) into photocatalyst substances, and photocatalyst activation can be enhanced by the visible light region Light (wavelength: from 400nm to 800nm). This is because the transition metal can form a new level in the forbidden band of the activated photocatalyst with a wide band gap, and can expand the light absorption range to the visible light region. For example, an acceptor type such as Cr or Ni, a donor type such as V or Mn, an amphoteric type such as Fe, or other types such as Ce, Mo, and W may be incorporated. The wavelength of light can therefore be determined according to the photocatalyst substance. Therefore, light irradiation means irradiation with light of such a wavelength that activates a photocatalyst substance with a photocatalyst.

When the photocatalyst material is heated and reduced under vacuum or under the reflux of hydrogen, oxygen defects are generated in the crystallization. In the absence of transition elements, oxygen deficiencies play the same role as electron donors in this way. In particular, in the case of the photocatalyst material formed by the lyogel method, since oxygen defects exist from the beginning, the photocatalyst material does not necessarily have to be reduced. Furthermore, oxygen deficiencies can be doped by N₂The gas or similar gas is formed.

Conductive layers made of heat-resistant metals and photocatalyst materials can be formed. Heat-resistant metals can be used such as: Ti (titanium), W (tungsten), Cr (chromium), Al (aluminum), Ta (tantalum), Ni (nickel), Zr (zirconium), Hf (hafnium), V ( Vanadium), Ir (iridium), Nb (niobium), Pb (lead), Pt (platinum), Mo (molybdenum), Co (cobalt) and Rh (rhodium) materials. Furthermore, the conductive layer is formed by a known method such as a sputtering method, an evaporation deposition method, an ion plating method, a CVD method, an immersion method, or a spin coating method. Preferably, it is formed by a sputtering method, an immersion method, or the like. Method or spin coating method. In the subsequent example of insulating the conductive layer, it is simple and preferably to form the conductive layer to have a thickness of 0.01 nm to 10 nm and be naturally oxidized to insulate it.

Alternatively, a method for performing plasma treatment on the formation area (formation surface) is used as another method. The plasma treatment is carried out by using air, oxygen or nitrogen as the processing gas, wherein the pressure is from tens of Torr (Torr) to 1000 Torr (133000 Pa), preferably, from 100 Torr (13300 Pa) to 1000 Torr (133000 Pa), more preferably, 700 Torr (93100 Pa) to 800 Torr (106400 Pa), that is, atmospheric pressure or pressure close to atmospheric pressure, and pulse voltage is applied under this condition. At this time, the plasma density is set at 1x10¹⁰m^-3To 1x10¹⁴m^-3, The so-called corona discharge or glow discharge. Surface modification can be implemented using plasma processing using air, oxygen or nitrogen as the processing gas without material dependence. Therefore, surface modification can be performed on any material.

As another alternative method, the substance acting as the organic material of the adhesive can be formed by the droplet discharge method to improve the adhesion of the pattern formed by the formation area. Using photosensitive or non-photosensitive organic materials (organic resin materials) (polyimide, acrylic, polyamide, polyamide, photoresist, benzocyclobutene and similar elements), with low boundary electrical properties Films or laminates made of one or more of constant low-k materials and similar elements can be used as this material. Furthermore, materials with a framework structure formed by bonds of silicon (Si) and oxides (O) and containing at least hydrogen as a substitute or containing at least one of fluorine, alkyls, and aromatic hydrocarbons can be used . A droplet discharge method or a printing method (a method for forming a pattern such as screen printing or offset printing) can be utilized as a manufacturing method. The TOF film, SOG film or the like obtained by the coating method can be used.

The step that is implemented on the area of the conductive material formed by using the droplet discharge method as a base pretreatment for improving the viscosity or surface modification can be implemented on the conductive material and is further formed on the area formed by using the droplet discharge method. Examples on the pattern.

As for the composition that is discharged from the discharge opening by the droplet discharge method to form a conductive material (conductive layer), a conductive material dissolved or dispersed in a solvent is used. Conductive materials are equivalent to metals such as silver, gold, copper, nickel, platinum, palladium, iridium, rhodium, tungsten or aluminum, sulfide of metals such as cadmium or zinc, iron, titanium, silicon, germanium, zirconium, barium or similar elements Oxidation, or fine particles of silver halide or dispersant nanoparticles. Furthermore, the conductive material is equivalent to indium tin oxide (ITO), indium tin oxide and silicon oxide (ITSO), organic indium, organic tin, zinc oxide, titanium nitride, or the like used as a transparent conductive film element. However, as for the composition discharged from the discharge opening, it is preferable to use any material selected from gold, silver, and copper, which is dissolved or dispersed in a solvent, taking into account the specific resistance value. It is better to use silver or copper with low resistance value. When silver or copper is used, the barrier film can be additionally provided as an impurity consideration. Silicon nitride film or nickel boron (NiB) can be used as the barrier film.

Furthermore, coating a conductive material with other conductive materials into several layers of particles can be used. For example, three-layer structure particles in which copper coated with nickel boron (NiB) and then coated with silver can be used. As for such solvents, esters such as butyl acetate and butyl acetate; alcohols such as isopropanol and butyl acetate; organic solvents such as methyl ethyl ketone and acetic acid; or similar solvents can be used. The viscosity of the composition is preferably 50 mPa.S (cps) or less. This is because the composition is prevented from drying out or the composition is discharged smoothly from the discharge opening. The surface tension of this composition is preferably 40 mN/m or less. However, the viscosity of the composition and the like can be appropriately adjusted according to the solvent to be used and intended use. For example, the viscosity of ITO, organic indium or organic tin dissolved or dispersed in a solvent is 5 mPa.S to 50 mPa.S, and the viscosity of a silver dissolved or dispersed in solvent is 5 mPa.S to 20 mPa. .S, and the viscosity of the composition in which gold is dissolved or dispersed in a solvent ranges from 10 mPa.S to 20 mPa.S.

The light-emitting display device of the present invention includes: a gate electrode formed on a substrate with an insulating surface, and a material with a photocatalyst function is arranged therebetween; a gate insulating layer formed on the gate electrode; a semiconductor layer and a first electrode , Formed on the gate insulating layer; wiring layer, formed on the semiconductor layer; partition wall, covering the edge of the first electrode and the wiring layer; electroluminescent layer, on the first electrode; and the second electrode, on the On the electroluminescent layer, the wiring layer covers the edge of the first electrode.

The light-emitting display device of the present invention includes: a wiring layer and a first electrode formed on a substrate with an insulating surface, and a substance with a photocatalyst function is interposed therebetween; a semiconductor layer is formed on the wiring layer; and a gate insulating layer is formed on the On the semiconductor layer; the gate electrode is formed on the gate insulating layer; the partition wall covers the edge of the first electrode and the wiring layer; the electroluminescent layer is on the first electrode; and the second electrode is on the electroluminescence Layer, wherein the wiring layer covers the edge portion of the first electrode.

The light-emitting display device of the present invention includes: a gate electrode formed on a substrate with an insulating surface with a photocatalyst function interposed therebetween; a gate insulating layer formed on the gate electrode; a semiconductor layer and a first electrode, Is formed on the gate insulating layer; the wiring layer is formed on the semiconductor layer; the partition wall covers the edge of the first electrode and the wiring layer; the electroluminescent layer is on the first electrode; and the second electrode is on the electro On the light-emitting layer, the first electrode covers the edge of the wiring layer.

The light-emitting display device of the present invention includes: a wiring layer and a first electrode formed on a substrate with an insulating surface, and a substance with a photocatalyst function is interposed therebetween; a semiconductor layer is formed on the wiring layer; and a gate insulating layer is formed on the On the semiconductor layer; the gate electrode is formed on the gate insulating layer; the partition wall covers the edge of the first electrode and the wiring layer; the electroluminescent layer is on the first electrode; and the second electrode is on the electroluminescence On the layer, the first electrode covers the edge of the wiring layer.

The light-emitting display device of the present invention includes: a conductive layer including a heat-resistant metal on a substrate with an insulating surface; a gate electrode formed on the conductive layer; a gate insulating layer formed on the gate electrode; a semiconductor layer and a An electrode formed on the gate insulating layer; a wiring layer formed on the semiconductor layer; a partition wall covering the edge of the first electrode and the wiring layer; an electroluminescent layer on the first electrode; and a second electrode, On the electroluminescent layer, the wiring layer covers the edge portion of the first electrode.

The light-emitting display device of the present invention includes: a conductive layer including a heat-resistant metal on a substrate with an insulating surface; a wiring layer and a first electrode formed on the conductive layer; a semiconductor layer formed on the wiring layer; and a gate insulating layer , Formed on the semiconductor layer; gate electrode, formed on the gate insulating layer; partition wall, covering the edge of the first electrode and the wiring layer; electroluminescent layer, on the first electrode; and the second electrode, on the On the electroluminescent layer, the wiring layer covers the edge of the first electrode.

The light-emitting display device of the present invention includes: a conductive layer including a heat-resistant metal on a substrate with an insulating surface; a gate electrode formed on the conductive layer; a gate insulating layer formed on the gate electrode; a semiconductor layer and a An electrode formed on the gate insulating layer; a wiring layer formed on the semiconductor layer; a partition wall covering the edge of the first electrode and the wiring layer; an electroluminescent layer on the first electrode; and a second electrode, On the electroluminescent layer, the first electrode covers the edge portion of the wiring layer.

The light-emitting display device of the present invention includes: a conductive layer including a heat-resistant metal on a substrate with an insulating surface; a wiring layer and a first electrode formed on the conductive layer; a semiconductor layer formed on the wiring layer; and a gate insulating layer , Formed on the semiconductor layer; gate electrode, formed on the gate insulating layer; partition wall, covering the edge of the first electrode and the wiring layer; electroluminescent layer, on the first electrode; and the second electrode, on the On the electroluminescent layer, the first electrode covers the edge of the wiring layer.

In the above structure, the semiconductor layer may be a semi-amorphous semiconductor layer containing hydrogen and halogen and having a crystalline structure. A television including a display screen formed by using the light-emitting display device having the above-mentioned structure can be manufactured.

The method for manufacturing the light-emitting display device of the present invention includes: forming a gate electrode by a droplet discharge method on a substrate with an insulating surface, and a substance with a photocatalyst function is arranged therebetween; forming a gate insulating layer on the gate On the electrode; forming a semiconductor layer on the gate insulating layer; forming a first electrode on the gate insulating layer by a droplet discharge method; forming a wiring layer on the semiconductor layer by a droplet discharge method to cover the first electrode Forming a partition wall to cover the edge of the first electrode and the wiring layer; forming an electroluminescent layer on the first electrode; and forming a second electrode on the electroluminescent layer by a droplet discharge method.

The method for manufacturing the light-emitting display device of the present invention includes: forming a first electrode by a droplet discharge method on a substrate with an insulating surface, with a substance having a photocatalyst function therebetween; forming a wiring layer on the insulating surface On the substrate, a substance with a photocatalyst function is arranged therebetween to cover the edge of the first electrode; a semiconductor layer is formed on the wiring layer; a gate insulating layer is formed on the semiconductor layer; the gate electrode is formed by a droplet discharge method On the gate insulating layer; forming a partition wall to cover the edge portion of the first electrode and the wiring layer; forming an electroluminescent layer on the first electrode; and forming a second electrode on the electroluminescent layer by a droplet discharge method superior.

The method for manufacturing the light-emitting display device of the present invention includes: forming a gate electrode by a droplet discharge method on a substrate with an insulating surface, and a substance with a photocatalyst function is arranged therebetween; forming a gate insulating layer on the gate On the electrode; forming a semiconductor layer on the gate insulating layer; forming a wiring layer on the semiconductor layer by a droplet discharge method; forming a first electrode on the gate insulating layer by a droplet discharge method to cover the wiring layer Edge portion; forming a partition wall to cover the edge portion of the first electrode and the wiring layer; forming an electroluminescent layer on the first electrode; and forming a second electrode on the electroluminescent layer by a droplet discharge method.

The method for manufacturing the light-emitting display device of the present invention includes: forming a wiring layer by a droplet discharge method on a substrate with an insulating surface, and a substance with a photocatalyst function is arranged therebetween; and forming the second layer by the droplet discharge method An electrode is on a substrate with an insulating surface, and a substance with a photocatalyst function is arranged in between to cover the edge of the wiring layer; a semiconductor layer is formed on the wiring layer; a gate insulating layer is formed on the semiconductor layer; discharged by droplets Method of forming a gate electrode on the gate insulating layer; forming a partition wall to cover the edge portion of the first electrode and the wiring layer; forming an electroluminescent layer on the first electrode; and forming the second by a droplet discharge method The electrodes are on the electroluminescent layer.

The method for manufacturing the light-emitting display device of the present invention includes: forming a conductive layer including a heat-resistant metal on a substrate having an insulating surface; forming a gate electrode on the conductive layer by a droplet discharge method; forming a gate insulating layer On the gate electrode; forming a semiconductor layer on the gate insulating layer; forming a first electrode on the gate insulating layer by a droplet discharge method; forming a wiring layer on the semiconductor layer by a droplet discharge method to cover Forming the edge portion of the first electrode; forming a partition wall to cover the edge portion of the first electrode and the wiring layer; forming an electroluminescent layer on the first electrode; and forming a second electrode on the electroluminescent layer by a droplet discharge method superior.

The method for manufacturing the light-emitting display device of the present invention includes: forming a conductive layer including a heat-resistant metal on a substrate having an insulating surface; and forming a wiring layer on the conductive layer by a droplet discharge method to cover the edge of the first electrode Forming a semiconductor layer on the wiring layer; forming a gate insulating layer on the semiconductor layer; forming a gate electrode on the gate insulating layer by a droplet discharge method; forming a partition wall to cover the edge of the first electrode and Wiring layer; forming an electroluminescent layer on the first electrode; forming a second electrode on the electroluminescent layer by a droplet discharge method.

The method for manufacturing the light-emitting display device of the present invention includes: forming a conductive layer including a heat-resistant metal on a substrate having an insulating surface; forming a gate electrode on the conductive layer by a droplet discharge method; forming a gate insulating layer On the gate electrode; forming a semiconductor layer on the gate insulating layer; forming a wiring layer on the semiconductor layer by a droplet discharge method; forming a first electrode on the gate insulating layer by a droplet discharge method to cover The edge of the wiring layer; forming a partition wall to cover the edge of the first electrode and the wiring layer; forming an electroluminescent layer on the first electrode; and forming a second electrode on the electroluminescent layer by a droplet discharge method .

The method for manufacturing the light-emitting display device of the present invention includes: forming a conductive layer including a heat-resistant metal on a substrate with an insulating surface; forming a wiring layer on the conductive layer by a droplet discharge method; and by a droplet discharge method The first electrode is formed on the conductive layer to cover the edge of the wiring layer; the semiconductor layer is formed on the wiring layer; the gate insulating layer is formed on the semiconductor layer; the gate electrode is formed by the droplet discharge method and the gate is insulated Forming a partition wall to cover the edge portion of the first electrode and the wiring layer; forming an electroluminescent layer on the first electrode; and forming a second electrode on the electroluminescent layer by a droplet discharge method.

The gate insulating layer can prevent oxidation of the gate electrode, and can have a good interface with the semiconductor layer by laminating the first silicon nitride film, the silicon oxide film, and the second silicon nitride film to form the gate insulating layer. On the upper side.

According to the present invention, the gate electrode layer, the wiring layer, and the mask layer used for patterning are formed by the droplet discharge method as described above. However, its purpose is to form at least one or more patterns required for manufacturing a light-emitting display device in a method capable of selectively forming patterns and to achieve it by manufacturing a light-emitting display device.

Furthermore, the partition wall can be made of organic materials, inorganic materials, or materials with a skeleton structure formed by the bond of silicon and oxide. Because organic materials are superior to planarity, the film thickness does not become very thin, and even when conductive materials are formed later, discontinuities do not occur in uneven parts; therefore, organic materials are used as interlayer insulation for several wirings Layer, the wiring capacity is reduced. Then, multiple wiring can be formed, and higher efficiency and higher functions can be obtained.

On the other hand, siloxane polymers can be designated as typical examples of materials for the skeleton structure formed by the bond of silicon and oxide. In particular, siloxane polymer is a material in which the skeleton structure is formed by the bond between silicon and oxide, and it contains at least hydrogen as a substitute, or it contains at least fluorine, alkyls, and aromatic hydrocarbons. One is used as a substitute material. This material is also superior to planarity, and has transparency and thermal resistance. The insulating material made of siloxane polymer can be heat treated at a temperature of about 300°C to 600°C or less after formation.

According to the present invention, the patterning of the wiring layer and the mask layer can be directly implemented by the droplet discharge method. Therefore, it is possible to obtain TFTs with improved material usability and simplified manufacturing steps and high-reliability light-emitting display devices together.

The embodiment mode of the present invention will be described in detail with reference to the drawings. Note that the present invention is not limited to the following description. Because it is easy to know for those familiar with the art, the modes and details of the present invention can be changed in various ways without departing from the spirit and scope of the present invention. Therefore, the present invention is not limited to the following description of the embodiment mode. Note that the same reference numbers are given to the same parts or parts with similar functions in the different drawings of the structure of the present invention to be described below, and repeated descriptions are omitted.

[Embodiment Mode 1]

The embodiment mode of the present invention will be described with reference to FIGS. 1A-1D and FIGS. 2A and 2B. In particular, a method for manufacturing and applying the light-emitting display device of the present invention will be described. First, referring to FIGS. 1A-1D and FIGS. 2A and 2B, a method for manufacturing a light-emitting display device with a channel protection thin film transistor is described, in which the present invention is applied to the manufacturing of gate electrodes and source/drain wiring.

The base film 101 for improving adhesion is formed on the substrate 100 as a base pretreatment. Glass substrates made of barium borosilicate glass, aluminum borosilicate glass, quartz substrates, silicon substrates, metal substrates, stainless steel substrates, or heat-resistant plastic substrates that can withstand the processing temperature during the manufacturing step can be used as the substrate 100. Furthermore, the surface of the substrate 100 may be polished by a CMP method or the like to make it planar. Note that an insulating layer may be formed on the substrate 100. The insulating layer is formed of an oxide or nitride material contained in a known method such as a CVD method, a plasma CVD method, a sputtering method, or a spin coating method to become a single layer or a stacked layer. The insulating layer may not be formed, but effectively blocks contaminants from the substrate 100 and the like. In an example of forming an insulating layer to prevent contamination of the glass substrate, the base film 101 is formed by a droplet discharge method as a pretreatment for the bottom of the conductive layers 102 and 103 formed thereon.

A mode of the droplet discharge device used for pattern formation is shown in FIG. 22. Each head 1405 of the droplet ejection mechanism 1403 is connected to the control mechanism 1407 and is controlled by the computer 1410 so that the pre-programmed pattern can be drawn. The timing of drawing may be determined based on the mark 1411 formed on the substrate 1400, for example. Alternatively, the calibration may be fixed based on the edge of the substrate 1400. This is detected by an imaging mechanism 1404 such as a CCD, and becomes a digital signal in the imaging processing mechanism 1409. Then, the digital signal is recognized by the computer 1410, and the control signal is generated and transmitted to the control mechanism 1407. Naturally, the information on the pattern formed on the substrate 1400 is stored in the storage medium 1408, and the control signal is transmitted to the control mechanism 1407 based on this information, so that each head 1405 of the droplet ejection mechanism 1403 can be individually controlled . The pattern can be drawn by discharging each conductive material, organic or inorganic material and similar materials using one head. When a pattern is drawn on a wide area, for example, on an interlayer film, one material is discharged from several nozzles at the same time to improve productivity, and therefore, drawing can be performed. When a large-size substrate is used, the head 1405 can freely move on the substrate, and the area to be drawn can be freely set. Therefore, several identical patterns can be drawn on one substrate.

In this embodiment mode, a substrate with a photocatalyst function is used as a base film with a function of improving adhesion. The photocatalyst substance can be immersed coating method, spin coating method, droplet discharge method, ion plating method, ion beam method, CVD method, sputtering method, RF magnetron electrosputtering method, electric It is formed by slurry spraying method or anodizing method. Furthermore, the substrate does not need to have a continuous film based on the formation method. In the example of a photocatalyst substance made of an oxide semiconductor including several metals, the photocatalyst substance can be formed by mixing and melting salts of constituent elements. When it is necessary to remove the solvent in an example where the photocatalyst substance is formed by a coating method such as an immersion coating method or a spin coating method, the solvent can be baked and dried. In particular, the solvent may be heated at a predetermined temperature (for example, 300°C or higher), preferably, in an atmosphere including oxygen. For example, silver (Ag) is used as a conductive paste, and baking is performed in an atmosphere including oxygen and nitrogen; then, organic materials such as thermosetting resins are decomposed. Therefore, silver without organic materials can be obtained. Therefore, the planarization on the surface of the silver can be enhanced.

According to this heat treatment, the photocatalyst substance can have a predetermined crystal structure. For example, the photocatalyst substance has an anatase type or a rutile/anatase mixed type. The anatase type is preferably formed in the low temperature phase. Therefore, even when it does not have a predetermined crystal structure, the photocatalyst substance can be heated. Furthermore, in the example formed by the coating method, the photocatalyst substance may be formed several times to obtain a predetermined film thickness.

TiOx (typically TiO²) An example of a crystal as a photocatalyst substance is described in this embodiment mode. The sputtering is performed using a titanium tube as a target and using argon and oxygen. Furthermore, helium (He) can be introduced. The atmosphere is caused to contain a large amount of oxygen, and the formation pressure is set high to form TiOx with high photocatalytic activity. It is preferable to form TiOx by heating the film forming chamber or the substrate provided with the object to be processed.

Even when the TiOx-based film thus formed is very thin, it has a photocatalyst function.

Furthermore, it is preferably formed by a sputtering method, an evaporative deposition method or the like, such as Ti (titanium), W (tungsten), Cr (chromium), Ta (tantalum), Ni (nickel) or Mo ( The base film 101 made of molybdenum) or its oxide metal material is used as another base pretreatment.

The base film 101 may be formed to have a thickness of 0.01 nm to 10 nm. The base film 101 can be formed very thin and does not need to have a layer structure. When a heat-resistant metal material is used as the base film, it is preferable to perform any one of the following two steps after forming the conductive layers 102 and 103 to process the base film exposed on the surface to become the gate electrode layer.

The first method is a step of insulating the base film 101 that does not overlap the conductive layers 102 and 103 and forming a pretreatment. In other words, the base film 101 that does not overlap the conductive layers 102 and 103 is oxidized and insulated. When the base film 101 is oxidized and insulated, in this way, it is preferable to form the base film 101 to have a thickness of 0.01 nm to 10 nm; therefore, the base film can be easily oxidized. Note that the oxidation can be performed by exposure to oxygen or by heat treatment.

The second method is a step of removing the base film 101 by etching using the conductive layers 102 and 103 as masks. When this step is used, there is no limit to the thickness of the base film 101.

Alternatively, a method of performing plasma treatment on the formation area (formation surface) may be used as another bottom pretreatment. Plasma processing uses air, oxygen or nitrogen as the processing gas and pressures ranging from tens of Torr (Torr) to 1000 Torr (133000 Pa), more preferably, 700 Torr (93100 Pa) to 800 Torr (106400 Pa) , That is, atmospheric pressure or pressure close to atmospheric pressure, and pulse voltage is applied under this condition. At this time, the plasma density is set at 1x10¹⁰m^-3To 1x10¹⁴m^-3, The so-called corona discharge or glow discharge. Surface modification can be performed without material dependence using plasma processing using air, oxygen or nitrogen as the processing gas. Therefore, surface modification can be performed on any material.

As another method, a substance that acts as an organic material as an adhesive can be formed to improve the adhesion of the pattern formed by the droplet discharge method in its formation area. It is possible to use organic materials (organic resin materials) (polyimide or propylene), or a skeleton structure formed by the bond of silicon (Si) and oxide (O) and containing at least hydrogen as a substitute or containing fluorine, At least one of alkyls and aromatic hydrocarbons is used as a substitute material.

Next, the composition including the conductive material is discharged, and the conductive layers 102 and 103 that function as gate electrodes are formed. The conductive layers 102 and 103 are formed by using a droplet discharge mechanism.

The conductive layers 102 and 103 are formed by using a droplet discharge mechanism. The droplet ejection mechanism is a general term for a mechanism for ejecting droplets, such as a nozzle with a discharge opening for a composition, or a head provided with one nozzle or several nozzles. Included in the droplet ejection mechanism is set at 0.02<i>μ</i>It is in the range of m to 100 μm (optimally 30 μm or less), and the volume of the composition discharged from the nozzle is in the range of 0.001 pl to 100 pl (optimally 10 pl or less). The volume of the composition to be discharged increases in proportion to the size of the diameter of the nozzle. Furthermore, it is preferable that the distance between the object to be processed and the discharge opening of the nozzle be as short as possible in order to drop the droplet on the desired position. This distance is best set in the range of 0.1 mm to 3 mm (more preferably 1 mm or less).

As for the composition discharged from the discharge opening, a conductive material dissolved or dispersed in a solvent is used. Conductive materials are equivalent to fine particles of metals such as silver, gold, copper, nickel, platinum, palladium, iridium, rhodium, tungsten or aluminum or dispersant nanoparticles, sulfide of metals such as cadmium or zinc, iron, titanium, silicon Oxidation of, germanium, zirconium, barium or similar elements, or silver halide. Furthermore, conductive materials are equivalent to indium tin oxide (ITO), indium tin oxide and silicon oxide (ITSO), organic indium, organic tin, zinc oxide, titanium nitride or similar elements, which are used as Transparent conductive film. However, as for the composition discharged from the discharge opening, it is preferable to use any material selected from gold, silver, and copper, which is dissolved or dispersed in a solvent, taking into account the specific resistance value. It is better to use silver or copper with low resistance value. When silver or copper is used, a barrier film can be additionally provided as a consideration for impurities. Silicon nitride film or nickel boron (NiB) can be used as the barrier film.

Furthermore, coating a conductive material with other conductive materials into several layers of particles can be used. For example, copper coated with nickel boron (NiB) and then coated with silver three-layer structure particles. As for such solvents, esters such as butyl acetate and butyl acetate; alcohols such as isopropanol and butyl acetate; organic solvents such as methyl ethyl ketone and acetic acid; or similar solvents can be used. The viscosity of the composition is preferably 50 mPa.S (cps) or less. This is because the composition is prevented from drying out, or the composition is discharged smoothly from the discharge opening. The surface tension of the composition is preferably 40 mN/m or less. Note that the viscosity of the composition and the like can be appropriately adjusted according to the solvent to be used and intended use. For example, the viscosity of ITO, organic indium or organic tin dissolved or dispersed in a solvent is 5 mPa.S to 50 mPa.S, and the viscosity of silver dissolved or dispersed in a solvent is 5 mPa.S to 20 mPa.S, And, the viscosity of gold dissolved or dispersed in a solvent is 10 mPa.S to 20 mPa.S.

The conductive layer can be formed by stacking several conductive materials. Furthermore, the conductive layer can be formed by a droplet discharge method using silver as a conductive material; then, it can be electroplated with copper or similar elements. Electroplating can be performed by electronic plating or chemical (electrode) plating methods. Electroplating can be performed by immersing the surface of the substrate in a container filled with a solution with electroplating material. A solution with electroplating material can be applied so that the solution flows on the surface of the substrate and the substrate is placed on an oblique (or vertical). When electroplating is performed by applying a solution on a substrate placed vertically, there is an advantage of minimizing processing equipment.

Although it depends on the diameter of each nozzle, the desired shape of the pattern, and the like, for the purpose of preventing clogging of the nozzle and producing a high-resolution pattern, the diameter of the particles of the conductive material is preferably as small as possible. Preferably, the diameter of the conductive material particles is 0.1 μm or less. This composition is formed by a known method such as an electric polarization method, an atomization method, a humidity reduction method or the like, and its particle size is typically about 0.01 μm to 10 μm. Note that when the gas expansion method is used, the nanomolecules protected by the dispersant are tiny, about 7nm. When each surface of the particles is covered with a coating, the nanoparticle does not adhere to the solvent, and is uniformly dispersed in the solvent at room temperature, and shows a ratio similar to liquid. Therefore, it is better to use a coating.

When the step of discharging the composition is performed under reduced pressure, the solvent of the composition is evaporated at the beginning of discharging the composition until the composition is deposited on the object to be treated, and therefore, the composition is then dried and baked The steps can be omitted. It is preferable to perform this step under reduced pressure because an oxide film or the like is not formed on the surface of the conductive material. After the composition is discharged, either or both of drying and baking are performed. Each step of drying and baking is a step of heat treatment. For example, drying is performed at 100° C. for 3 minutes, while drying is performed at a temperature of 200° C. to 350° C. for 15 minutes to 30 minutes. Each step has a different purpose, temperature and duration. The steps of drying and baking are carried out under normal pressure or under reduced pressure by laser light irradiation, rapid thermal annealing, heating furnace or the like. Note that the timing of the heat treatment is not particularly limited. This substrate can be heated to advantageously perform the steps of drying and baking. The temperature of the substrate at this time depends on the material of the substrate or the like, and is typically 100°C to 800°C (preferably 200°C to 350°C). According to these steps, the nanoparticles are brought into contact with each other, and the fusion and fusion are accelerated by hardening and shrinking the surrounding resin and evaporating the solvent in the composition or chemically removing the dispersant.

Continuous wave or pulse wave gas laser or solid laser can be used for laser light irradiation. Laser lasers, YAG lasers and similar lasers can be designated as gas lasers, and use YAG or YVO doped with chromium and neodymium₄The crystal or laser can be designated as the analog of solid laser. Note that with regard to the absorption of laser light, it is better to use a continuous wave laser system. Also, a so-called hybrid laser irradiation method combining pulse wave and continuous wave can be used. However, preferably, depending on the thermal resistance of the substrate 100, the heat treatment is instantaneously irradiated by laser light within a few microseconds to tens of seconds so that the substrate 100 is not damaged. Rapid thermal annealing (RTA) is implemented by using an infrared lamp or a halogen lamp that emits ultraviolet to infrared light in an inert gas environment to rapidly increase the temperature and heat for several microseconds to several minutes. Because this treatment is performed instantaneously, only the film on the top surface can be substantially heated, and the underlying film is not affected. In other words, even substrates with low heat resistance such as plastic substrates are not affected.

Furthermore, the above-mentioned step of forming the base film 101 is performed as a bottom pretreatment for the conductive layer to be formed by using a droplet discharge method; however, this processing step may be performed after the conductive layer is formed.

Next, a gate insulating film is formed on the conductive layers 102 and 103 (refer to FIG. 1A). The gate insulating film may be made of known materials such as silicon oxide and silicon nitride materials, and may be a single-layer stack. For example, it may be a silicon nitride film or a three-layer stack of a silicon oxide film and a silicon nitride film, or it may be a single layer of a silicon nitride film or a single layer of a silicon oxynitride film, or a stack of two layers. The silicon nitride film is used as the insulating layer 104, and the silicon oxynitride film is used as the gate insulating layer 105 in this embodiment mode. Silicon nitride film with precise film quality can be preferably used. In the case of using silver, copper or the like for the conductive layer formed by the droplet discharge method and then forming a silicon nitride film or NiB film thereon as a barrier film, the silicon nitride film or NiB film is effectively Prevent the diffusion of impurities and planarize the surface. Note that in order to form a precision insulating film with a small amount of leakage current at a low film formation temperature, a rare gas element such as argon is preferably included in the reaction gas and is preferably mixed with the insulating film to be formed.

Next, the conductive layer (also referred to as the first electrode) 106 is formed into a gate insulating film by selectively discharging a composition including a conductive material (refer to FIG. 1B). When light is emitted from the side of the substrate 100 or when a conductive EL display panel is to be manufactured, the conductive layer 106 can be formed by including: indium tin oxide (ITO), indium tin oxide containing silicon oxide (ITSO), oxide Zinc (ZnO), tin oxide (SnO)₂) Or a predetermined pattern of a composition of similar elements and formed by baking the composition.

Preferably, the conductive layer 106 is made of indium tin oxide (ITO), indium tin oxide containing silicon oxide (ITSO), zinc oxide (ZnO) or similar elements by a sputtering method. More preferably, an indium tin oxide containing silicon oxide formed by a sputtering method using a target of 2% to 10% by weight of ITO containing silicon oxide is used. Furthermore, a conductive oxide material containing silicon oxide in which indium oxide is mixed with 2% to 20% by weight of zinc oxide (ZnO) can be used. The mask layer may be formed by a droplet discharge method, and is etched by a sputtering method after forming the conductive layer (first electrode) 106 to have a desired pattern. In this embodiment mode, the conductive layer 106 is made of a light-transmitting conductive material by a droplet discharge method. In particular, the conductive layer 106 is formed by using indium tin oxide or ITSO made of ITO and silicon oxide. Although not shown, similar to the example in which the conductive layers 102 and 103 are formed, a photocatalyst substance may be formed in the region where the conductive layer 106 is formed. The photocatalyst substance can improve the viscosity, and the conductive layer 106 can be formed into a desired pattern of thin lines. The conductive layer 106 becomes a first electrode that functions as a pixel electrode.

In this embodiment mode, the foregoing is an example of a gate insulating layer composed of three layers of silicon nitride film/silicon oxynitride film (silicon oxide film)/silicon nitride film made of silicon nitride. The conductive layer (first electrode) 106 made of indium tin oxide containing silicon oxide is preferably formed in close contact with the gate insulating layer 105 made of silicon nitride. Therefore, the effect of increasing the rate of light emitted from the electroluminescent layer can be created.

Furthermore, when the generated light hits the opposite side of the substrate 100 or when the reflective EL display panel is manufactured, a composition including particles of a metal such as silver, gold, copper, tungsten, or aluminum as the main component may be used. As another method, the first electrode layer may be formed by forming a transparent conductive film or a light-reflecting conductive film by a sputtering method, forming a mask pattern by a droplet discharge method, and additionally performing an etching process.

The conductive layer (first electrode) 106 can be polished by a CMP method or multi-body washing with polyvinyl alcohol to planarize its surface. Furthermore, the surface of the conductive layer (first electrode) 106 may be irradiated with ultraviolet rays, or may be treated with oxygen plasma after being polished by the CMP method.

The semiconductor layer can be formed by a known method (sputtering method, LPCVD method, plasma CVD method, or the like). There is no particular limitation on the material of the semiconductor layer. However, the semiconductor layer is preferably made of silicon, silicon germanium (SiGe) alloy or similar elements.

The semiconductor layer uses an amorphous semiconductor (typically hydrogenated amorphous silicon) or a crystalline semiconductor (typically polysilicon) as a material. Polysilicon includes so-called high-temperature polysilicon that uses polysilicon formed at a processing temperature of 800°C or higher as the main material, and so-called low-temperature polysilicon that uses polysilicon formed at a processing temperature of 600°C or less as the main material. By adding, for example, crystalline silicon used to promote the crystallization of crystallization elements, and the like.

Furthermore, as another substance, a semi-amorphous semiconductor or a semiconductor containing a crystal phase in a part of the semiconductor layer can also be used. Semi-amorphous semiconductor means an intermediate structure with an amorphous structure and a crystalline structure (including single crystal and polycrystalline), a third state that is stable in terms of free energy, and crystallinity with short-distance rules and lattice distortion semiconductor. Typically, it is a semiconductor layer containing silicon as the main component with lattice distortion, in which the Raman spectrum is shifted to 520 cm^-1The low frequency side. Furthermore, at least 1 atomic% or more of hydrogen or halogen is contained therein as a neutralizer for the dangling bond. Here, such a semiconductor as described above is called a semi-amorphous semiconductor (hereinafter referred to as "SAS"). SAS is also called a so-called microcrystalline semiconductor (typically microcrystalline silicon).

SAS can be obtained by performing glow discharge decomposition (plasma CVD) on silicide gas. SiH₄It is designated as a typical silicide gas. Si₂H₆, SiH₂Cl₂, SiHCl₃, SiCl₄, SiF₄Or similar elements and SiH₄Can be used. Furthermore, GeF₄Or F₂Can be mixed. The formation of SAS can be promoted by using a mixture of silicified gas diluted with hydrogen or hydrogen and one or more rare gases selected from helium, argon, krypton, and neon. The dilution ratio of hydrogen to silicide gas is, for example, preferably in the range of 2 times to 1000 times in terms of flow ratio. Although the formation of SAS decomposed by glow discharge is preferably carried out under reduced pressure, this formation can also be carried out by discharge under atmospheric pressure. Typically, this formation can be performed at a pressure range of 0.1 Pa to 133 Pa. The power supply frequency for generating the glow discharge in the range of 1 MHz to 120 MHz is preferably in the range of 13 MHz to 60 MHz. The high frequency power supply can be set appropriately. The temperature for heating the substrate is preferably 300°C or less, and a temperature in the range of 100°C to 200°C is also acceptable. As for the impurity elements mainly contained in the film formation, the impurities derived from atmospheric components such as oxygen, nitrogen or carbon are preferably 1x10²⁰ cm^-3Or less, and especially, the oxygen concentration is 5x10¹⁹ cm^-3Or smaller, preferably 1x10¹⁹ cm^-3Or smaller. Furthermore, the stability of the SAS can be enhanced by allowing rare gas elements such as helium, argon, krypton, and neon to be included to promote lattice distortion, thereby obtaining a favorable SAS. Furthermore, the SAS layer formed from a hydrogen-based gas can be laminated on the SAS layer formed from a fluorine-based gas as a semiconductor layer.

When the crystalline semiconductor layer is used as the semiconductor layer, known methods (laser crystallization method, thermal crystallization method, thermal crystallization method using an element that promotes crystallization such as nickel, or the like) can be used as A method for manufacturing a crystalline semiconductor layer. In the case where the element that promotes crystallization is not introduced, by heating the amorphous silicon film at 500°C for 4 hours in a nitrogen gas before irradiating the amorphous silicon film with laser light, hydrogen is released until it is contained in The hydrogen concentration of the amorphous silicon film becomes 1x10²⁰atoms/cm³Or smaller. This is because when the amorphous silicon film containing a large amount of hydrogen is irradiated with laser light, the film is damaged.

As long as it is a method that can make the metal element exist on the surface or inside of the amorphous semiconductor layer, this system is not particularly limited to the method for introducing the metal element into the amorphous semiconductor layer. For example, a sputtering method, a CVD method, a plasma processing method (including a plasma CVD method), an adsorption method, or a method for applying a metal salt solvent can be utilized. Among these methods, the method of using a solvent is simple and easy, and is useful in that the concentration of the metal element can be easily adjusted. Preferably, the oxide film is formed by UV light irradiation in oxygen, a thermal oxidation method, and treatment with ozone water or hydrogen peroxide containing hydroxyl groups or similar elements to improve the surface of the amorphous semiconductor layer. Wet, and disperse an aqueous solution on the entire surface of the amorphous semiconductor layer.

Furthermore, processing and laser light irradiation can be combined to crystallize the amorphous semiconductor layer. The heat treatment and/or laser light irradiation can be performed separately several times.

Organic semiconductors using organic materials can be used as semiconductors. Low-molecular-weight materials, high-molecular-weight materials, or similar materials are used for organic semiconductors, and furthermore, materials such as organic pigments and conductive high-molecular-weight materials can be used.

Amorphous semiconductors are used as semiconductors in this embodiment mode. That is, the semiconductor layer 107 of an amorphous semiconductor is formed, and the insulating film is formed by, for example, a plasma CVD method and is patterned to have a desired shape in a desired area, in order to form the channel protection film 109 and 110. At this time, the channel protection films 109 and 110 can be formed by exposing the back surface of the substrate using the gate electrode as a mask. Furthermore, polyimide, polyvinyl alcohol or the like can be dropped by a droplet discharge method as a channel protective film. Therefore, the exposure step can be omitted. Then, the N-type semiconductor layer 108 is formed by a plasma CVD method or the like (refer to FIG. 1C) using, for example, an N-type amorphous semiconductor layer having a conductivity. If necessary, a conductive semiconductor layer may be formed.

Inorganic materials (silicon oxide, silicon nitride, silicon oxynitride and similar elements), photosensitive or non-photosensitive organic materials (organic resin materials) (polyimide, acrylic, polyamide, polyamide, photoresist) , Benzocyclobutene and similar elements), one or more of low-k materials and similar elements with low dielectric constant, or a film made of laminates thereof can be used as a channel protective film. Furthermore, materials with a framework structure formed by bonds of silicon (Si) and oxides (O) and containing at least hydrogen as a substitute or containing at least one of fluorine, alkyls, and aromatic hydrocarbons can be used . An evaporation phase growth method such as a plasma CVD method or a thermal CVD method or a sputtering method can be utilized as the manufacturing method. Furthermore, a droplet discharge method or a printing method (a method for forming a pattern such as screen printing or offset printing) can be used. The TOF film, SOG film or the like obtained by the coating method can be used.

Next, mask layers 111 and 112 made of insulating materials such as photoresist or polyimide are formed. Then, the semiconductor layer 107 and the N-type semiconductor layer 108 are simultaneously patterned using the mask layers 111 and 112.

Then, the mask layers 113 and 114 made of insulating materials such as photoresist or polyimide are formed by using a droplet discharge method (refer to FIG. 1D). The through hole 118 is formed in a part of the gate insulating layers 104 and 105 by etching using the mask layers 113 and 114, and is arranged on the lower layer side and functions as the conductive layer 103 of the gate electrode layer. Part of it was exposed. Plasma etching (dry etching) or wet etching may be adopted as the etching process. However, plasma etching is suitable for processing large substrates. Such as CF₄, NF₃, Cl₂Or BCl₃The fluorine-based or chlorine-based gas system is used as an etching gas, and an inert gas such as He or Ar can be appropriately added. Furthermore, when the atmospheric pressure exhaust etching process is applied, the partial exhaust process can be implemented, and the mask layer does not need to be entirely formed on the substrate.

After removing the mask layers 113 and 114, the conductive layers 115, 116, and 117 are formed by discharging a composition including conductive materials. Then, the N-type semiconductor system is patterned using conductive layers 115, 116, and 117 as masks to form an N-type semiconductor layer (refer to FIG. 2A). The conductive layers 115, 116, and 117 function as wiring layers. Note that the above-mentioned under-pretreatment of selectively forming a photocatalyst substance or similar material in the portions of the conductive layers 115, 116, and 117 that will be in contact with the gate insulating layer 105 can be performed before forming the conductive layers 115, 116, and 117 (although not shown) ). Therefore, the conductive layer can be formed with good adhesion.

The above steps of forming the base film can be implemented by using a droplet discharge method as a base pretreatment for the conductive layer to be formed. Furthermore, the processing step may be performed after the conductive layer is formed. Because the adhesion between the layers is improved according to this step, the reliability of the light-emitting display device can be improved.

The conductive layer 117 functions as a source and drain wiring layer, and is formed to be electrically connected to the pre-formed first electrode. Furthermore, the conductive layer 116 of the source and drain wiring layers and the conductive layer 103 of the gate electrode layer are electrically connected to each other through the through holes 118 formed in the gate insulating layer 105. A composition including particles of a metal such as silver, gold, copper, tungsten, or aluminum as a main component can be used as a conductive material for forming a wiring layer. Furthermore, translucent indium tin oxide (ITO), ITSO made of indium tin oxide and silicon oxide, organic indium, organic tin, zinc oxide, titanium nitride or similar elements can be combined.

The step of forming the through holes 118 in a part of the gate insulating layers 104 and 105 may be performed after forming the conductive layers 115, 116 and 117 using the conductive layers 115, 116 and 117 as masks to form the through holes 118. Then, a conductive layer is formed in the through hole 118, and the conductive layer 116 and the conductive layer 103 of the gate electrode layer are electrically connected to each other. In this example, there is an advantage of simplifying this step.

Next, an insulating layer 120 that will become a stack (also referred to as a partition wall) is formed. Although not shown, a protective layer made of silicon nitride or silicon oxynitride can be completely formed on the insulating layer 120 to cover the thin film transistor. After the insulating layer is completely formed by a spin coating method or an immersion method, an opening is formed in the insulating layer 120 as shown in FIG. 2B by an etching process. When the insulating layer 120 is formed by the droplet discharge method, the etching process is not necessary. When the insulating layer 120 or the like is formed on a wide area by a droplet discharging method, it is formed by discharging the composition from a plurality of discharge openings of the nozzle in the droplet discharging device and by guiding it to make the number The lines overlap each other. Therefore, productivity is improved.

The insulating layer 120 is formed according to the conductive layer 106 of the first electrode to have through holes corresponding to the positions of the pixels to be formed. The insulating layer 120 can be formed by using inorganic insulating materials such as silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, aluminum nitride, or aluminum oxynitride; acrylic acid; methacrylic acid; derivatives of acrylic acid or methacrylic acid ; Such as polyimide, aromatic polyammonium or polybenzocyclobutene heat-resistant polymer heavy materials; or inorganic silicone or organosiloxane insulating materials, in which the hydrogen combined with silicon contains silicon, Oxygen and hydrogen are replaced with organic compounds such as toluene or phenyl that include Si-O-Si bonds in compounds formed by using siloxane materials as starting materials. It is preferable to form the insulating layer 120 by using a photosensitive or non-photosensitive material such as acrylic or polyimide, because its side surface becomes the shape of the upper film with continuously changing radius of curvature and without damage.

According to the above steps, the TFT substrate of the EL display panel with the bottom gate type (also called reverse staggered type) channel protection TFT and the first electrode (first electrode layer) connected to the substrate 100 is completed.

Before the electroluminescent layer 121 is formed, the moisture adsorbed on the inner side or on the surface of the insulating layer 120 is removed by performing heat treatment at 200° C. under atmospheric pressure. Furthermore, the heat treatment is performed under reduced pressure at a temperature of 200°C to 400°C, preferably 250°C to 350°C, and the electroluminescent layer 121 does not need to be exposed to the atmosphere under reduced pressure. The ground is formed by a vacuum evaporation deposition method or a droplet discharge method.

The materials showing red (R), green (G), and blue (B) luminescence are selectively formed as the electroluminescent layer 121 by the vapor deposition method or the like using respective vapor deposition masks. The light emitting material (low molecular weight or high molecular weight material or similar material) that displays red (R), green (G) and blue (B) can be formed by a droplet discharge method similar to a color filter. This example is better because it can separate colors in RGB without using a mask. That is, the conductive layer 122 of the second electrode is laminated on the electroluminescent layer 121, and then, a light-emitting display device with a display function using a light-emitting element is completed (refer to FIG. 2B).

It is effective to provide a passivation film to cover the second electrode, although not shown. Passivation films include silicon oxide (SiO2), silicon nitride (SiN), silicon oxynitride (SiON), silicon oxynitride (SiNO), aluminum oxynitride (AiON), aluminum nitride (AiN) or aluminum oxynitride (AiON) insulating film is made of aluminum oxynitride, aluminum oxide, diamond-like carbon (DLC) or nitrogen-containing carbon film (CNx) with greater nitrogen content than oxygen content (AiNO), and the insulating film A single layer or a laminate in combination with multiple layers can be used. For example, a laminate of a nitrogen-containing carbon film (CNx)/silicon nitride (SiN) or an organic material may be used, and a laminate of a polymer material such as a styrene polymer may be used. Furthermore, a skeleton structure composed of silicon (Si) bonds and oxides (O) and materials containing at least hydrogen as a substitute or at least one of fluorine, alkyls, and aromatic hydrocarbons as a substitute Can be used.

In this example, a film with good coverage is preferably used as a passivation film, and it is effective to use a carbon film, especially a DLC film. Since the DLC film can be formed at a temperature ranging from room temperature to 100°C or lower, it can be easily formed on an electroluminescent layer with low impedance. The DLC film can be made by plasma CVD method (typically RF plasma CVD method, microwave CVD method, electron accelerated resonance (ECR) CVD method, hot filament CVD method or the like), combustion flame method, sputtering method, It is formed by ion beam evaporation deposition method, laser evaporation deposition method or the like. Hydrogen and hydrocarbons (e.g. CH₄, C₂H₂, C₆H₆, Or similar elements) are used as the reaction gas to be used for film formation. This gas system is ionized by glow discharge, and the ions are accelerated to form a film against a cathode that is applied with a negative collision auto-bias. Furthermore, CN film can use C₂H₄Chi and N₂Gas is formed as a reactive gas. The DLC film has a high blocking effect against oxygen and can inhibit the oxidation of the electroluminescent layer. Therefore, the problem of the oxidized electroluminescent layer in the following sealing step can be prevented.

FIG. 16A is a top view of the pixel portion in the light-emitting display device of this embodiment mode, and FIG. 16B shows a circuit diagram thereof. Reference numbers 1601 and 1602 represent TFT; 1603 represents a light-emitting element; 1604 is a capacitor; 1605 is a source line; 1606 is a drain line; and 1607 is a power supply line. The TFT 1601 is a transistor (hereinafter also referred to as "switching transistor" or "switching TFT") that controls the connection state with a signal line. The TFT 1602 is a transistor that controls the current flowing to the light-emitting element (hereinafter also referred to as "drive transistor" or "drive TFT"), and the drive TFT is connected in series with the light-emitting element. The capacitor 1604 maintains the source gate voltage of the TFT 1602 that is the driving TFT.

FIG. 13 is a detailed diagram of the light-emitting display device of this embodiment mode. The substrate 100 having the TFTs 1601 and 1602 and the TFT 1602 of the driving TFT connected to the light-emitting element 1603 is firmly fixed to the sealing substrate 150 by the sealant 151. Various signals supplied to each circuit formed on the substrate 100 are supplied from the terminal part.

The gate wiring layer 160 is formed on the terminal portion in the same steps as the conductive layers 102 and 103. Naturally, the photocatalyst substance is formed in the formation area of the gate wiring layer 160, similar to the conductive layers 102 and 103. When it is formed by a droplet discharge method, the adhesion between the gate wiring layer 160 and the formation area of the bottom can be improved. When the through hole 118 is formed in the gate insulating layer 105, etching to expose the gate wiring layer 160 is performed simultaneously. The flexible printed circuit board (FPC) 162 can be connected to the gate wiring layer 160 through the anisotropic conductive layer 161.

Note that an example of the light-emitting element 1603 sealed with a glass substrate is shown in the above-mentioned light-emitting display device. The sealing process is a process used to protect the light-emitting element from moisture. Any one of a method of sealing with a covering material, a method of sealing with a thermosetting resin or a UV hardening resin, and a method of sealing with a film with high barrier capability such as metal oxygen or nitrogen is used. Glass, ceramic, plastic, or metal can be used as the covering material; however, when light hits the covering material side, the covering material must be translucent. The cover material and the substrate on which the light emitting element is formed are attached to each other using a sealant such as thermosetting resin or UV curing resin. The sealed space is formed by curing the resin by heat treatment or ultraviolet light irradiation treatment. It is also effective to provide a hygroscopic material represented by barium oxide inside the sealed space. The moisture absorbing material may be provided on the sealant to be in contact with the sealant, or may be provided on the partition wall or the surrounding portion that does not block the light from the light emitting element. Furthermore, the space between the covering material and the substrate on which the light-emitting element is formed can be filled with thermosetting resin or UV curing resin. In this example, it is effective to add a moisture absorbing material represented by barium oxide to a thermosetting resin or a UV hardening resin.

As mentioned above, since there is no need to apply an exposure step using a photomask, this step can be omitted in this embodiment mode. Furthermore, even when the fifth or next produced glass substrate with a side exceeding 1000 mm is used, the EL display panel can be easily manufactured by directly forming various patterns on the substrate by the droplet discharge method.

Furthermore, a highly reliable light-emitting display device with improved adhesion and peel resistance is manufactured.

[Embodiment Mode 2]

The embodiment mode of the present invention will be described with reference to FIGS. 5A to 5D and FIGS. 6A and 6B. This embodiment mode describes an example of using a channel-etched thin film transistor as the thin film transistor of Embodiment Mode 1. Therefore, repeated descriptions of the same parts or parts with similar functions are omitted.

A base film 501 having a function of improving adhesion is formed on the substrate 500 (refer to FIG. 5A). Note that an insulating layer may be formed on the substrate 500. The insulating layer is used as a base film, although it may not be necessary to be formed, and it is effective to block contaminants or the like leaving the substrate 500. In an example of forming an insulating layer to prevent contamination of the glass substrate, the base film 501 is formed by a droplet discharge method as the base film in the formation regions of the conductive layers 502 and 503 to be formed thereon.

In this embodiment mode, a substance with a photocatalyst function is used as a base film with a function of improving viscosity.

An example of forming a TiOx crystal having a predetermined crystal structure as a photocatalyst substance by a sputtering method is described in this embodiment mode. The sputtering is performed using a titanium tube as a target and using argon and oxygen. Furthermore, helium can be introduced. The atmosphere is caused to include a large amount of oxygen, and the formation pressure is set to a high value to form TiOx with high photocatalytic activity. It is preferable to form TiOx while heating the film forming chamber or the substrate provided with the object to be processed.

Even when the TiOx-based film thus formed is very thin, it has a photocatalyst function.

Furthermore, a metal such as Ti (titanium), W (tungsten), Cr (chromium), Ta (tantalum), Ni (nickel) or Mo (molybdenum) is formed by a sputtering method, an evaporation deposition method or the like. The base film 501 made of material or its oxide is preferable as another base pretreatment. The base film 501 may be formed to a thickness of 0.01 nm to 10 nm. The base film 501 can be formed to be very thin and does not need to have a layer structure. When a heat-resistant metal material is used as the base film, after forming the conductive layers 502 and 503 as the gate electrode layer, it is preferable to process the base film exposed on the surface by performing any one of the following two steps.

The first method is a step of insulating the base film 501 that does not overlap the conductive layers 502 and 503 and forming an insulating layer. In other words, the base film 501 that does not overlap the conductive layers 502 and 503 is oxidized and insulated. When the base film 501 is oxidized and insulated in this way, it is preferable to form the base film 101 having a thickness of 0.01 nm to 10 nm; therefore, the base film can be easily oxidized. Note that oxidation can be performed by exposure to oxygen or heat treatment.

The second method is a step of removing the base film 501 by etching by using the conductive layers 502 and 503 as masks. When this step is used, it is not limited to the thickness of the base film 501.

Alternatively, a method of performing plasma treatment on the formation area (formation surface) may be used as another bottom pretreatment. Plasma processing is performed by using air, oxygen or nitrogen as the processing gas, and its pressure is tens of Torr to 1000 Torr (133000 Pa), preferably, 100 Torr (13300 Pa) to 1000 Torr (133000 Pa) , More preferably 700 Torr (93100 Pa) to 800 Torr (106400 Pa), that is, atmospheric pressure or pressure close to atmospheric pressure, and the pulse voltage is applied under this condition. At this time, the plasma density is set at 1x10¹⁰m^-3To 1x10¹⁴m^-3, The so-called corona discharge or glow discharge. Surface modification can be performed without material dependence by using plasma processing using air, oxygen or nitrogen as the processing gas. Therefore, surface modification can be performed on any material.

As another method, a substance that acts as an organic material as an adhesive can be formed to improve the adhesion of the pattern formed by the droplet discharge method in its formation area. Organic material (organic resin material) (polyimide or acrylic) or a skeleton structure formed by the bond of silicon (Si) and oxide (O) and it contains at least hydrogen as a substitute or it contains fluorine and alkyl And at least one of aromatic hydrocarbons as a substitute material.

Next, the composition including the conductive material is discharged, and the conductive layers 502 and 503 functioning as gate electrodes are then formed. The conductive layers 502 and 503 are formed by using a droplet discharge mechanism. Silver is used as the conductive material in this embodiment mode; however, a stack of silver and copper or similar elements can be used. Furthermore, a single layer of copper can be used.

The above step of forming the base film 501 is performed as a bottom pretreatment for the conductive layer formed by using the droplet discharge method; however, this processing step may be performed after the conductive layer is formed.

Next, a conductive layer (also referred to as a first electrode) 506 is formed on the gate insulating film by selectively discharging a composition including a conductive material (refer to FIG. 5B). When light is emitted from the side of the substrate 500 or when a conductive EL display panel is to be manufactured, the conductive layer 506 can be formed by including: indium tin oxide (ITO), indium tin oxide containing silicon oxide (ITSO), oxide Zinc (ZnO), tin oxide (SnO)₂) Or a predetermined pattern of a composition of similar elements and formed by baking the composition. Although not shown, the photocatalyst substance may be formed in the region where the conductive layer 506 is formed, similar to the example of forming the conductive layers 502 and 503. The photocatalyst substance can improve the viscosity, and the conductive layer 506 can be formed into a desired pattern of thin lines. The conductive layer 506 becomes a first electrode that functions as a pixel electrode.

The semiconductor layer can be formed by a known method (sputtering method, LPCVD method, plasma CVD method, or the like). There is no particular limitation on the material of the semiconductor layer. However, the semiconductor layer is preferably made of silicon, silicon germanium (SiGe) alloy or similar elements.

Amorphous semiconductors (typically hydrogenated amorphous silicon), semi-amorphous semiconductors, semiconductors including a part of the crystalline phase in the semiconductor layer, crystalline semiconductors (typically polysilicon) or organic semiconductors can be used as semiconductors Floor.

Amorphous semiconductor systems are used as semiconductors in this embodiment mode. The semiconductor layer 507 is formed, and, for example, the semiconductor layer having a conductor of the N-type semiconductor layer 508 is formed by a plasma CVD method or the like (refer to FIG. 5C). If necessary, a semiconductor layer with a conductor can be formed.

Next, mask layers 511 and 512 made of insulating materials such as photoresist or polyimide are formed. Then, the semiconductor layer 507 and the N-type semiconductor layer 508 are simultaneously patterned using the mask layers 511 and 512.

Then, mask layers 513 and 514 made of insulating materials such as photoresist or polyimide are formed by using a droplet discharge method (refer to FIG. 5D). The through hole 518 is formed on a part of the gate insulating layers 504 and 505 by etching using the mask layers 513 and 514, and is arranged on the lower layer side and functions as the conductive layer 503 of the gate electrode layer. Part of it was exposed.

After the mask layers 513 and 514 are removed, the conductive layers 515, 516, and 517 are formed by discharging the composition including the conductive material. Then, the N-type semiconductor system is patterned using conductive layers 515, 516, and 517 as masks to form an N-type semiconductor layer (refer to FIG. 6A). It is noted that, although not shown, before forming the conductive layers 515, 516, and 517, the photocatalyst material can be optionally formed on the portions where the conductive layers 515, 516, and 517 are in contact with the gate insulating layer 505. Therefore, the conductive layer can be formed with good adhesion.

The conductive layer 517 functions as a source-drain wiring layer, and is formed to be electrically connected to the conductive layer 506, which is a pre-formed first electrode. Furthermore, the conductive layer 516 of the source-drain wiring layer and the conductive layer 503 of the gate electrode layer are electrically connected to each other in the through hole 518 formed in the gate insulating layer 505.

The step of forming the through holes 518 in the gate insulating layers 504 and 505 can be performed after forming the conductive layers 515, 516, and 517 using the conductive layers 515, 516, and 517 that will become wiring layers as masks to form the through holes 518. Then, a conductive layer is formed in the through hole 518, and, that is, the conductive layer 516 of the wiring layer and the conductive layer 503 of the gate electrode layer are electrically connected to each other. In this example, there is an advantage of simplifying this step.

Next, an insulating layer 520 that will become a stack (also referred to as a partition wall) is formed. After the insulating layer is completely formed by a spin coating method or an immersion method, an opening is formed in the insulating layer 520 as shown in FIG. 6B by an etching process. When the insulating layer 520 is formed by the droplet discharge method, the etching process is unnecessary.

The insulating layer 520 is formed to have a through hole corresponding to the position where the conductive layer 506 of the first electrode forms the pixel.

According to the above steps, the bottom gate type (also called inverted staggered type) channel etched TFT and that is, the TFT substrate in which the first electrode is connected to the conductive layer 506 on the substrate 500 is completed.

The electroluminescent layer 521 and the conductive layer 522 are laminated on the conductive layer 506 of the first electrode, and then, a light-emitting display device with a display function using a light-emitting element is completed (refer to FIG. 6B).

As mentioned above, this step can be omitted in this embodiment mode without applying the exposure step using the photomask. Furthermore, even when the fifth or next produced glass substrate with a side exceeding 1000 mm is used, the EL display panel can be easily manufactured by directly forming various patterns on the substrate by the droplet discharge method.

Furthermore, highly reliable light-emitting display devices with improved adhesion and peel resistance can be manufactured.

[Embodiment Mode 3]

The embodiment mode of the present invention is described with reference to FIGS. 9A to 9D and FIG. 10. This embodiment mode describes an example of using a top gate type (also referred to as a staggered type) thin film transistor as the thin film transistor of Embodiment Mode 1. Therefore, repeated descriptions of the same parts or parts with similar functions are omitted.

A base film 901 having a function of improving adhesion is formed on the substrate 900 (refer to FIG. 9A). Note that an insulating layer may be formed on the substrate 900. The insulating layer does not need to be formed, and it is effective to block the substrate 900 from contaminants or the like. The insulating layer is particularly required in the case of the interlaced thin-film transistor in this embodiment mode, because the semiconductor layer is directly in contact with the substrate. In an example of forming a base film to prevent the glass substrate from being contaminated, the base film 901 is formed by a droplet discharge method as the base film in the formation area of the conductive layers 915, 916, and 917 to be formed thereon.

In this embodiment mode, a substance with a photocatalyst function is used as the base film 901 with a function of improving viscosity.

An example of forming a TiOx crystal having a predetermined crystal structure as a photocatalyst substance by a sputtering method is described in this embodiment mode. The sputtering is performed using a titanium tube as a target and using argon and oxygen. Furthermore, helium can be introduced. The atmosphere is caused to include a large amount of oxygen, and the formation pressure is set to a high value to form TiOx with high photocatalytic activity. It is preferable to form TiOx when heating the film forming chamber or the substrate provided with the object to be processed.

Even when the TiOx-based film thus formed is very thin, it has a photocatalyst function.

Furthermore, a metal such as Ti (titanium), W (tungsten), Cr (chromium), Ta (tantalum), Ni (nickel) or Mo (molybdenum) is formed by a sputtering method, an evaporation deposition method or the like. The base film 901 made of the material or its oxide is preferable as another base pretreatment. The base film 901 may be formed to a thickness of 0.01 nm to 10 nm. The base film 901 can be formed to be very thin and does not need to have a layer structure. When a heat-resistant metal material is used as the base film, after forming the conductive layers 915, 916, and 917 as source-drain wiring layers, the exposed surface is processed by performing any one of the following two steps: The bottom film is better.

The first method is a step of insulating the base film 901 that does not overlap the conductive layers 915, 916, and 917 that function as the source-drain wiring layer, and forming an insulating layer. In other words, the base film 901 that does not overlap the conductive layers 915, 916, and 917 functioning as the source-drain wiring layer is oxidized and insulated. When the base film 901 is oxidized and insulated in this way, it is preferable to form the base film 901 having a thickness of 0.01 nm to 10 nm; therefore, the base film can be easily oxidized. Note that oxidation can be performed by exposure to oxygen or heat treatment.

The second method is a step of removing the base film 901 by etching using conductive layers 915, 916, and 917 functioning as source-drain wiring layers as masks. When this step is used, it is not limited to the thickness of the base film 901.

Alternatively, a method of performing plasma treatment on the formation area (formation surface) may be used as another bottom pretreatment. Plasma processing is performed using air, oxygen or nitrogen as the processing gas, where the pressure is from tens of Torr to 1000 Torr (133000 Pa), preferably, from 100 Torr (13300 Pa) to 1000 Torr (133000 Pa), More preferably, it is 700 Torr (93100 Pa) to 800 Torr (106400 Pa), that is, atmospheric pressure or a pressure close to atmospheric pressure, and the pulse voltage is applied under such conditions. At this time, the plasma density is set at 1x10¹⁰m^-3To 1x10¹⁴m^-3, The so-called corona discharge or glow discharge. Surface modification can be performed by plasma processing using air, oxygen or nitrogen as the processing gas without material dependence. Therefore, surface modification can be performed on any material.

As another method, a substance that acts as an organic material as an adhesive can be formed to improve the adhesion of the pattern formed by the droplet discharge method in its formation area. Organic material (organic resin material) (polyimide or acrylic) or a skeleton structure formed by the bond of silicon (Si) and oxide (O) and it contains at least hydrogen as a substitute or it contains fluorine and alkyl And at least one of aromatic hydrocarbons as a substitute material.

Next, the composition including the conductive material is discharged, and conductive layers 915, 916, and 917 functioning as source-drain wiring layers are formed. The conductive layers 915, 916, and 917 are formed by using a droplet discharge mechanism.

A composition including particles of metal such as silver, gold, copper, tungsten, or aluminum as its main component can be used as a conductive material for forming the conductive layers 915, 916, and 917. Since the source-drain wiring layer is preferably low impedance, any material selected from gold, silver, and copper dissolved or dispersed in a solvent is preferred considering the specific impedance value. It is better to use silver or copper with low resistance. This solvent is equivalent to esters such as butyl acetate, alcohols such as isopropanol, organic solvents such as propylene, or the like. The surface tension and its viscosity are appropriately adjusted by adjusting the concentration of the solvent or by adding a surfactant or the like.

Next, the conductive layer (also referred to as the first electrode) 906 is formed by selectively discharging the composition including the conductive material (refer to FIG. 9A). When light is emitted from the side of the substrate 900 or when a conductive EL display panel is to be manufactured, the conductive layer 906 can be formed by including: indium tin oxide (ITO), indium tin oxide containing silicon oxide (ITSO), oxide Zinc (ZnO), tin oxide (SnO)₂) Or a predetermined pattern of a composition of similar elements and formed by baking the composition. Although not shown, the photocatalyst substance may be similar to the example in which the conductive layers 915, 916, and 917 are formed in the region where the conductive layer 906 is formed. The photocatalyst substance can improve the viscosity, and the conductive layer 906 can be formed into a desired pattern of thin lines. The conductive layer 906 becomes a first electrode that functions as a pixel electrode.

Furthermore, the above-mentioned step of forming the base film 901 is performed by using a droplet discharge method as a bottom pretreatment for forming the conductive layer; however, this processing step can be performed after forming the conductive layers 915, 916, and 917 . For example, when a titanium oxide film is formed and an N-type semiconductor layer is formed thereon, the adhesion between the conductive layer and the N-type semiconductor layer is improved, although not shown.

After the N-type semiconductor layer is entirely formed on the conductive layers 915, 916, and 917, the N-type semiconductor layer between the conductive layer 915 and the conductive layer 916 and the conductive layer 916 and the conductive layer 917 is used such as photoresist or polyamide. The mask layers 911, 912, and 919 made of amine insulating material are removed by etching. If necessary, a semiconductor layer with a conductor can be formed. Then, the semiconductor layer 907 made of AS or SAS is formed by an evaporation phase growth method or a sputtering method. When the plasma CVD method is used, AS is made by using SiH which is the semiconductor material gas₄Or SiH₄And H₂The mixed gas is formed. SAS is formed by mixed gas, in which SiH₄Tie H₂Dilute three times 1000 times. When the SAS is formed of the above-mentioned gas, the semiconductor layer has good crystallinity on the surface side of the semiconductor layer. This is a top gate type TFT suitable for forming the gate electrode on the upper layer of the semiconductor layer.

Next, the gate insulating layer 905 is formed as a single layer or has a laminated structure by using a plasma CVD method or a sputtering method. A three-layer stack of an insulating layer made of silicon nitride, an insulating layer made of silicon oxide, and an insulating layer made of silicon nitride is a particularly preferred structure.

Next, the gate electrode layers 902 and 903 are formed by the droplet discharge method. A composition including particles of a metal such as silver, gold, copper, tungsten, or aluminum as a main component can be used as a conductive material for forming this layer.

The semiconductor layer 907 and the gate insulating layer 905 are formed in positions corresponding to the source-drain wiring layers (conductive layers 915, 916, and 917) using the mask layers 913 and 914 formed by the droplet discharge method. In other words, the semiconductor layer is formed to straddle the conductive layer 915 and the conductive layer 916.

Next, the conductive layers 930 and 931 are formed by the droplet discharge method. The conductive layer 916 and the gate electrode layer 903 and the conductive layer 917 and the conductive layer 916 are respectively, that is, the first electrode system is electrically connected to each other.

The source-drain wiring layer and the gate electrode can be directly connected through the gate electrode layer without using the conductive layer 930. In this example, before the gate electrode layers 902 and 903 are formed, through holes are formed in the gate insulating layer 905 and the pair of conductive layers 916 and 917, and the source-drain wiring layer is exposed. Thereafter, the gate electrode layers 902 and 903 and the conductive layer 931 are formed by a droplet discharge method. At this time, the wiring of the gate electrode layer 903 also serves as the conductive layer 930 and is connected to the conductive layer 916. Either dry etching or wet etching for etching is used; however, plasma etching, that is, dry etching is preferable.

Next, an insulating layer 920 that will become a stack (also referred to as a partition wall) is formed. Although not shown, a protective layer made of silicon nitride or silicon oxynitride can be completely formed on the insulating layer 920 to cover the thin film transistor. After the insulating layer is completely formed by a spin coating method or an immersion method, an opening is formed in the insulating layer 920 as shown in FIG. 10 by an etching process. When the insulating layer 920 is formed by the droplet discharge method, the etching process is not necessary. When the insulating layer 920 or the like is formed on a wide area by a droplet discharging method, it is formed by discharging the composition from a plurality of discharge openings of the nozzle in the droplet discharging device and by guiding it to make the number The lines overlap each other. Therefore, productivity is improved.

The insulating layer 920 is formed according to the conductive layer 906 of the first electrode to have through holes corresponding to the positions of the pixels to be formed.

According to the above steps, the top gate type (also referred to as the staggered type) TFT and the TFT substrate in which the first electrode layer is connected to the conductive layer 906 on the substrate 900 are completed.

Before the electroluminescent layer 921 is formed, the moisture adsorbed on the inner side or on the surface of the insulating layer 920 is removed by performing heat treatment at 200° C. under atmospheric pressure. Furthermore, the heat treatment is performed under reduced pressure at a temperature of 200°C to 400°C, preferably 250°C to 350°C, and the electroluminescent layer 921 does not need to be exposed to the atmosphere under reduced pressure. The ground is formed by a vacuum evaporation deposition method or a droplet discharge method.

The electroluminescent layer 921 and the conductive layer 922 are laminated on the conductive layer 906 of the first electrode, and then, a light-emitting display device with a display function using a light-emitting element is completed (refer to FIG. 10).

As mentioned above, this step can be omitted in this embodiment mode without applying the exposure step using the photomask. Furthermore, even when the fifth or next produced glass substrate with a side exceeding 1000 mm is used, the EL display panel can be easily manufactured by directly forming various patterns on the substrate by the droplet discharge method.

Furthermore, highly reliable light-emitting display devices with improved adhesion and peel resistance can be manufactured.

[Embodiment Mode 4]

The embodiment modes of the present invention are described with reference to FIGS. 3A to 3D and FIGS. 4A and 4B. This embodiment mode illustrates an example with a different connection structure of the thin film transistor and the first electrode from Embodiment Mode 1. Therefore, repeated descriptions of the same parts or parts with similar functions are omitted.

The base film 301 for improving the adhesion is formed on the substrate 300 as a base pretreatment. An example of a TiOx crystal having a predetermined crystal structure formed by a sputtering method as a photocatalyst substance is explained in this embodiment mode. The sputtering is performed using a titanium tube as a target and using argon and oxygen. Furthermore, helium can be introduced. The atmosphere is caused to include a large amount of oxygen, and the formation pressure is set to a high value to form TiOx with high photocatalytic activity. It is preferable to form TiOx when heating the film forming chamber or the substrate provided with the object to be processed.

Even when the TiOx-based film thus formed is very thin, it has a photocatalyst function.

Furthermore, it is preferably formed by sputtering method, evaporation deposition method or similar method such as Ti (titanium), W (tungsten), Cr (chromium), Ta (tantalum), Ni (nickel) or Mo The base film 301 made of (molybdenum) metal material or its oxide is preferable as another base pretreatment. The base film 301 may be formed to a thickness of 0.01 nm to 10 nm. The base film 301 can be formed to be very thin and does not need to have a layer structure. When a heat-resistant metal material is used as the base film, after forming the conductive layers 302 and 303 as source-drain wiring layers, the base film exposed on the surface is processed by performing any one of the following two steps Department is better.

The first method is a step of insulating the base film 301 that does not overlap the conductive layers 302 and 303 and forming an insulating layer. In other words, the base film 301 that does not overlap the conductive layers 302 and 303 is oxidized and insulated. When the base film 301 is oxidized and insulated in this way, it is preferable to form the base film 301 having a thickness of 0.01 nm to 10 nm; therefore, the base film can be easily oxidized. Note that oxidation can be performed by exposure to oxygen or heat treatment.

The second method is a step of removing the base film 301 by etching using the conductive layers 302 and 303 as masks. When this step is used, it is not limited to the thickness of the base film 301.

Alternatively, a method of performing plasma treatment on the formation area (formation surface) may be used as another bottom pretreatment. Plasma processing is performed using air, oxygen or nitrogen as the processing gas, where the pressure is from tens of Torr to 1000 Torr (133000 Pa), preferably, from 100 Torr (13300 Pa) to 1000 Torr (133000 Pa), More preferably, it is 700 Torr (93100 Pa) to 800 Torr (106400 Pa), that is, atmospheric pressure or a pressure close to atmospheric pressure, and the pulse voltage is applied under such conditions. At this time, the plasma density is set at 1x10¹⁰m^-3To 1x10¹⁴m^-3, The so-called corona discharge or glow discharge. Surface modification can be performed by plasma processing using air, oxygen or nitrogen as the processing gas without material dependence. Therefore, surface modification can be performed on any material.

As another method, a substance that acts as an organic material as an adhesive can be formed to improve the adhesion of the pattern formed by the droplet discharge method in its formation area. Organic material (organic resin material) (polyimide or acrylic) or a skeleton structure formed by the bond of silicon (Si) and oxide (O) and it contains at least hydrogen as a substitute or it contains fluorine and alkyl And at least one of aromatic hydrocarbons as a substitute material.

Next, the composition including the conductive material is discharged, and conductive layers 302 and 303 functioning as gate electrodes are then formed. The conductive layers 302 and 303 are formed by using a droplet discharge mechanism. Silver is used as the conductive material in this embodiment mode; however, laminated silver and copper or similar elements can be used. Furthermore, a single layer of copper can be used.

The above-mentioned step of forming the base film 301 is implemented as a bottom pretreatment for the conductive layer to be formed by using a droplet discharge method; however, this processing step can be implemented after the conductive layer is formed.

Next, a gate insulating film is formed on the conductive layers 302 and 303 (refer to FIG. 3A). The gate insulating film may be made of known materials such as silicon oxide and silicon nitride materials, and may be a single-layer stack.

For example, it may be a silicon nitride film or a three-layer stack of a silicon oxide film and a silicon nitride film, or it may be a single layer of a silicon nitride film or a single layer of a silicon oxynitride film, or a stack of two layers. The silicon nitride film is used as the insulating layer 104, and the silicon oxynitride film is used as the gate insulating layer 105 in this embodiment mode. Silicon nitride film with precise film quality can be preferably used. In an example in which silver, copper, or the like is used for the conductive layer formed by the droplet discharge method and then a silicon nitride film or NiB film is formed thereon as a barrier film, the silicon nitride film or NiB film is effectively Prevent the diffusion of impurities and planarize the surface. Note that in order to form a precision insulating film with a small amount of leakage current at a low film formation temperature, a rare gas element such as argon is preferably included in the reaction gas and is preferably mixed with the insulating film to be formed.

The semiconductor layer can be formed by a known method (sputtering method, LPCVD method, plasma CVD method, or the like). There is no particular limitation on the material of the semiconductor layer. However, the semiconductor layer is preferably made of silicon, silicon germanium (SiGe) alloy or similar elements.

Amorphous semiconductors (typically hydrogenated amorphous silicon), semi-amorphous semiconductors, semiconductors including a part of the crystalline phase in the semiconductor layer, crystalline semiconductors (typically polysilicon), or organic semiconductors can be used as The semiconductor is in this embodiment mode.

Amorphous semiconductors are used as semiconductors in this embodiment mode. The semiconductor layer 307 is formed, and the insulating film is formed by, for example, a plasma CVD method and is patterned to have a desired shape in a desired area to form channel protection films 309 and 310. Furthermore, polyimide, polyvinyl alcohol, and the like can be formed as a channel protective film by a droplet discharge method or a printing method (a method for forming a pattern such as screen printing or offset printing). Then, for example, the semiconductor layer with a conductor of the N-type semiconductor layer 308 is formed by a plasma CVD method or the like. If necessary, a semiconductor layer with a conductor can be formed.

Next, mask layers 311 and 312 made of insulating materials such as photoresist or polyimide are formed. Then, the semiconductor layer 307 and the N-type semiconductor layer 308 are simultaneously patterned using the mask layers 311 and 312.

Then, mask layers 313 and 314 made of insulating materials such as photoresist or polyimide are formed by using a droplet discharge method (refer to FIG. 3C). The through hole 318 is formed on a part of the gate insulating layer 304 and 305 by etching using the mask layers 313 and 314, and is arranged on the lower layer side and functions as the conductive layer 303 of the gate electrode layer. Part of it was exposed. Plasma etching (dry etching) or wet etching may be adopted as the etching process. However, plasma etching is suitable for processing large substrates. Furthermore, when the atmospheric pressure exhaust etching process is applied, the partial exhaust process can be implemented, and the mask layer does not need to be entirely formed on the substrate.

After the mask layers 313 and 314 are removed, the conductive layers 315, 316, and 317 are formed by discharging a composition including a conductive material. Then, the N-type semiconductor system is patterned using conductive layers 315, 316, and 317 (refer to FIG. 3D). Note that the above-mentioned under-pretreatment of selectively forming a photocatalyst substance or similar material at the portions of the conductive layers 315, 316, and 317 that will be in contact with the gate insulating layer 305 can be performed before the conductive layers 315, 316, and 317 are formed (although not shown) ). Furthermore, the bottom pretreatment can also be implemented on the surface after the formation. According to this step, the conductive layer can be formed with a laminated lower layer and an upper layer with good adhesion.

Furthermore, conductive layers 315, 316, and 317, which are also wiring layers, are formed to cover the N-type semiconductor layer and the semiconductor layer as shown in FIG. 3D. The semiconductor layer is patterned by etching. Therefore, the wiring layer may not be able to cover the steep steps, and may not be connected. Therefore, the insulating layers 341, 342, and 343 are formed to reduce the level, and this level can be caused to gradually slow down. When the droplet discharge method is used, the insulating layers 341, 342, and 343 can be selectively formed without a mask or the like. This level can be lowered by the insulating layers 341, 342, and 343, and the wiring layer covering the insulating layer can be well covered without defects such as cracking. The insulating layers 341, 342, and 343 can be formed by using inorganic insulating materials, such as silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, aluminum nitride, or aluminum oxynitride; acrylic; methacrylic; acrylic or methyl Propylene derivatives; heat-resistant high molecular weight materials such as polyiminium, aromatic polyammonium or polybenzocyclobutene; or inorganic siloxanes or organic compounds such as toluene or phenyl combined with silicon The hydrogen organosiloxane alkyl insulating materials include Si-O-Si bonds in compounds containing silicon, oxygen and hydrogen, and are formed by using siloxane materials as starting materials.

Next, the conductive layer (also referred to as the first electrode) 306 is formed into a gate insulating film by selectively discharging a composition including a conductive material, so as to be in contact with the conductive layer 317 acting as a source-drain wiring layer (refer to Figure 4A). When light is emitted from the side of the substrate 300 or when a conductive EL display panel is to be manufactured, the conductive layer 306 can be formed by including: indium tin oxide (ITO), indium tin oxide containing silicon oxide (ITSO), oxide Zinc (ZnO), tin oxide (SnO)₂) Or a predetermined pattern of a composition of similar elements and formed by baking the composition. Although not shown, a pretreatment such as the formation of a photocatalyst substance may be implemented similar to the example in which the conductive layers 302 and 303 are formed, and the photocatalyst substance may be formed in the region where the conductive layer 306 is formed. The under-pretreatment can improve the viscosity, and the conductive layer 306 can be formed into a desired pattern of thin lines. The conductive layer 306 becomes a first electrode that functions as a pixel electrode.

Furthermore, the conductive layer 316 of the source and drain wiring layers and the conductive layer 303 of the gate electrode layer are electrically connected to each other through the through holes 318 formed in the gate insulating layer 305. A composition including particles of a metal such as silver, gold, copper, tungsten, or aluminum as a main component can be used as a conductive material for forming a wiring layer. Furthermore, translucent indium tin oxide (ITO), ITSO made of indium tin oxide and silicon oxide, organic indium, organic tin, zinc oxide, titanium nitride or similar elements can be combined.

The step of forming the through holes 318 in a part of the gate insulating layers 304 and 305 can be performed after forming the conductive layers 315, 316, and 317 using the conductive layers 315, 316, and 317 as masks to form the through holes 318. Then, a conductive layer is formed in the through hole 318, and the conductive layer 316 and the conductive layer 303 of the gate electrode layer are electrically connected to each other.

Next, an insulating layer 320 that will become a stack (also referred to as a partition wall) is formed. Although not shown, a protective layer made of silicon nitride or silicon oxynitride can be completely formed on the insulating layer 320 to cover the thin film transistor. After the insulating layer is completely formed by a spin coating method or an immersion method, an opening is formed in the insulating layer 320 as shown in FIG. 4B by an etching process. When the insulating layer 320 is formed by the droplet discharge method, the etching process is not necessary. When the insulating layer 320 or the like is formed on a wide area by a droplet discharging method, it is formed by discharging the composition from a plurality of discharge openings of the nozzle in the droplet discharging device and by guiding it to make the number The lines overlap each other. Therefore, productivity is improved.

The insulating layer 320 is formed according to the conductive layer 306 of the first electrode to have through holes corresponding to the positions of the pixels to be formed.

According to the above steps, the TFT substrate of the EL display panel for the bottom gate type (also called inverted staggered type) channel protection TFT and the conductive layer (first electrode layer) 306 connected to the substrate 300 is completed.

The electroluminescent layer 321 and the conductive layer 322 are laminated on the conductive layer 306 of the first electrode, and then, a light-emitting display device with a display function using a light-emitting element is completed (refer to FIG. 4B).

As mentioned above, since there is no need to apply an exposure step using a photomask, this step can be omitted in this embodiment mode. Furthermore, even when the fifth or next produced glass substrate with a side exceeding 1000 mm is used, the EL display panel can be easily manufactured by directly forming various patterns on the substrate by the droplet discharge method.

Furthermore, a highly reliable light-emitting display device with improved adhesion and peel resistance is manufactured.

[Embodiment Mode 5]

The embodiment mode of the present invention will be described with reference to FIGS. 7A to 7D and FIGS. 8A and 8B. This embodiment mode describes an example of using a channel-etched thin film transistor as the thin film transistor of Embodiment Mode 2. Therefore, repeated descriptions of the same parts or parts with similar functions are omitted.

A base film 701 with improved adhesion is formed on the substrate 700 as a base pretreatment. An example of forming a TiOx crystal having a predetermined crystal structure as a photocatalyst substance by a sputtering method is described in this embodiment mode. The sputtering is performed using a titanium tube as a target and using argon and oxygen. Furthermore, helium can be introduced. The atmosphere is caused to include a large amount of oxygen, and the formation pressure is set to a high value to form TiOx with high photocatalytic activity. It is preferable to form TiOx while heating the film forming chamber or the substrate provided with the object to be processed.

Even when the TiOx-based film thus formed is very thin, it has a photocatalyst function.

Furthermore, it is preferably formed by sputtering method, evaporation deposition method or similar method such as Ti (titanium), W (tungsten), Cr (chromium), Ta (tantalum), Ni (nickel) or Mo The base film 701 made of (molybdenum) metal material or its oxide is preferable as another base pretreatment. The base film 701 may be formed to a thickness of 0.01 nm to 10 nm. The base film 701 can be formed to be very thin and does not need to have a layer structure. When a heat-resistant metal material is used as the base film, after forming the conductive layers 702 and 703 as the gate electrode layer, it is preferable to process the base film exposed on the surface by performing any one of the following two steps .

The first method is a step of insulating the base film 701 that does not overlap the conductive layers 702 and 703 and forming an insulating layer. In other words, the base film 701 that does not overlap the conductive layers 702 and 703 is oxidized and insulated. When the base film 701 is oxidized and insulated in this manner, it is preferable to form the base film 701 having a thickness of 0.01 nm to 10 nm; therefore, the base film can be easily oxidized. Note that oxidation can be performed by exposure to oxygen or heat treatment.

The second method is a step of removing the base film 701 by etching using the conductive layers 702 and 703 as masks. When this step is used, it is not limited to the thickness of the base film 701.

Alternatively, a method of performing plasma treatment on the formation area (formation surface) may be used as another bottom pretreatment. Plasma processing is performed using air, oxygen or nitrogen as the processing gas, where the pressure is from tens of Torr to 1000 Torr (133000 Pa), preferably, from 100 Torr (13300 Pa) to 1000 Torr (133000 Pa), More preferably, it is 700 Torr (93100 Pa) to 800 Torr (106400 Pa), that is, atmospheric pressure or a pressure close to atmospheric pressure, and the pulse voltage is applied under such conditions. At this time, the plasma density is set at 1x10¹⁰m^-3To 1x10¹⁴m^-3, The so-called corona discharge or glow discharge. Surface modification can be performed by plasma processing using air, oxygen or nitrogen as the processing gas without material dependence. Therefore, surface modification can be performed on any material.

As another method, a substance that acts as an organic material as an adhesive can be formed to improve the adhesion of the pattern formed by the droplet discharge method in its formation area. Organic material (organic resin material) (polyimide or acrylic) or a skeleton structure formed by the bond of silicon (Si) and oxide (O) and it contains at least hydrogen as a substitute or it contains fluorine and alkyl And at least one of aromatic hydrocarbons as a substitute material.

Next, the composition including the conductive material is discharged, and the conductive layers 702 and 703 functioning as gate electrodes are then formed. The conductive layers 702 and 703 are formed by using a droplet discharge mechanism. Silver is used as the conductive material in this embodiment mode; however, laminated silver and copper or similar elements can be used. Furthermore, a single layer of copper can be used.

The above-mentioned step of forming the base film 701 is implemented as a bottom pretreatment for the conductive layer to be formed by using a droplet discharge method; however, this processing step can be implemented after the conductive layer is formed.

Next, a gate insulating film is formed on the conductive layers 702 and 703 (refer to FIG. 7A). The gate insulating film may be made of known materials such as silicon oxide and silicon nitride materials, and may be a single-layer stack.

The semiconductor layer can be formed by a known method (sputtering method, LPCVD method, plasma CVD method, or the like). There is no particular limitation on the material of the semiconductor layer. However, the semiconductor layer is preferably made of silicon, silicon germanium (SiGe) alloy or similar elements.

Amorphous semiconductors (typically hydrogenated amorphous silicon), semi-amorphous semiconductors, semiconductors including a part of the crystalline phase in the semiconductor layer, crystalline semiconductors (typically polysilicon), or organic semiconductors can be used as The semiconductor is in this embodiment mode.

Amorphous semiconductors are used as semiconductors in this embodiment mode. The semiconductor layer 707 is formed, and, for example, the semiconductor layer having a conductor of the N-type semiconductor layer 708 is formed by a plasma CVD method or the like. If necessary, a semiconductor layer with a conductor can be formed.

Next, mask layers 711 and 712 made of insulating materials such as photoresist or polyimide are formed. Then, the semiconductor layer 707 and the N-type semiconductor layer 708 are simultaneously patterned using the mask layers 711 and 712 (refer to FIG. 7B).

Then, mask layers 713 and 714 made of insulating materials such as photoresist or polyimide are formed by using a droplet discharge method (refer to FIG. 7C). The through holes 718 are formed on a part of the gate insulating layers 704 and 705 by etching using the mask layers 713 and 714, and are arranged on the lower layer side and function as the conductive layer 703 of the gate electrode layer. Part of it was exposed. Plasma etching (dry etching) or wet etching may be adopted as the etching process. However, plasma etching is suitable for processing large substrates. Furthermore, when the atmospheric pressure exhaust etching process is applied, the partial exhaust process can be implemented, and the mask layer does not need to be entirely formed on the substrate.

After the mask layers 713 and 714 are removed, the conductive layers 715, 716, and 717 are formed by discharging a composition including a conductive material. Then, the N-type semiconductor system is patterned using conductive layers 715, 716, and 717 (refer to FIG. 7D). Note that the above-mentioned under-pretreatment of selectively forming a photocatalyst substance or similar material in the portions of the conductive layers 715, 716, and 717 that will be in contact with the gate insulating layer 705 can be performed before the conductive layers 715, 716, and 717 are formed (although not shown) ). Furthermore, the bottom pretreatment can also be implemented on the surface after the formation. According to this step, the conductive layer can be formed with a laminated lower layer and an upper layer with good adhesion.

Next, the conductive layer (also called the first electrode) 706 is formed into a gate insulating film by selectively discharging a composition including a conductive material to contact the conductive layer 717 that functions as a source-drain wiring layer (refer to Figure 8A). When light is emitted from the side of the substrate 700 or when the conductive EL display panel is to be manufactured, the conductive layer 706 can be formed by including: indium tin oxide (ITO), indium tin oxide containing silicon oxide (ITSO), oxide Zinc (ZnO), tin oxide (SnO)₂) Or a predetermined pattern of a composition of similar elements and formed by baking the composition. Although not shown, a pretreatment such as the formation of a photocatalyst substance can be implemented similar to the example in which the conductive layers 702 and 703 are formed, and the photocatalyst substance can be formed in the region where the conductive layer 706 is formed. The under-pretreatment can improve the viscosity, and the conductive layer 706 can be formed into a desired pattern of thin lines. The conductive layer 706 becomes a first electrode that functions as a pixel electrode.

Furthermore, the conductive layer 716 of the source and drain wiring layers and the conductive layer 703 of the gate electrode layer are electrically connected to each other through the through holes 718 formed in the gate insulating layer 705. A composition including particles of a metal such as silver, gold, copper, tungsten, or aluminum as a main component can be used as a conductive material for forming a wiring layer. Furthermore, translucent indium tin oxide (ITO), ITSO made of indium tin oxide and silicon oxide, organic indium, organic tin, zinc oxide, titanium nitride or similar elements can be combined.

The step of forming the through holes 718 in a part of the gate insulating layers 704 and 705 may be performed after forming the conductive layers 715, 716, and 717 using the conductive layers 715, 716, and 717 as masks to form the through holes 718. Then, a conductive layer is formed in the through hole 718, and the conductive layer 716 and the conductive layer 703 of the gate electrode layer are electrically connected to each other.

Next, an insulating layer 720 that will become a stack (also referred to as a partition wall) is formed. Although not shown, a protective layer made of silicon nitride or silicon oxynitride can be completely formed on the insulating layer 720 to cover the thin film transistor. After the insulating layer is completely formed by a spin coating method or an immersion method, an opening is formed in the insulating layer 720 as shown in FIG. 8B by an etching process. When the insulating layer 720 is formed by the droplet discharge method, the etching process is not necessary. When the insulating layer 720 or the like is formed on a wide area by a droplet discharging method, it is formed by discharging the composition from a plurality of discharge openings of the nozzle in the droplet discharging device and by guiding it to make the number The lines overlap each other. Therefore, productivity is improved.

The insulating layer 720 is formed according to the conductive layer 706 of the first electrode to have through holes corresponding to the positions of the pixels to be formed.

According to the above steps, the TFT substrate of the EL display panel for bottom gate type (also called inverted staggered type) channel etching TFT and the first electrode (first electrode layer) 706 connected to the substrate 700 is completed.

The electroluminescent layer 721 and the conductive layer 722 are laminated on the conductive layer 706 of the first electrode, and then, a light-emitting display device with a display function using a light-emitting element is completed (refer to FIG. 8B).

As mentioned above, since there is no need to apply an exposure step using a photomask, this step can be omitted in this embodiment mode. Furthermore, even when the fifth or next produced glass substrate with a side exceeding 1000 mm is used, the EL display panel can be easily manufactured by directly forming various patterns on the substrate by the droplet discharge method.

Furthermore, a highly reliable light-emitting display device with improved adhesion and peel resistance is manufactured.

[Embodiment Mode 6]

The embodiment mode of the present invention will be explained with reference to FIGS. 11A to 11D and FIG. 12. This embodiment mode describes an example of using a channel-etched thin film transistor as the thin film transistor of Embodiment Mode 3. Therefore, repeated descriptions of the same parts or parts with similar functions are omitted.

A base film 201 having a function of improving adhesion is formed on the substrate 200 as a base pretreatment (refer to FIG. 11A). Note that the insulating layer may not necessarily be formed, but it is effective to prevent contaminants or the like from leaving the substrate 200. The base film is particularly effective in the interlaced thin-film transistor example of this embodiment mode, because the semiconductor layer is directly in contact with the substrate. The base film 201 is formed by a droplet discharge method as a base film in the formation area of the conductive layers 202 and 203 to be formed thereon.

In this embodiment mode, a substance with a photocatalyst function is used as the base film 201 with a function of improving viscosity.

An example of forming a TiOx crystal having a predetermined crystal structure as a photocatalyst substance by a sputtering method is described in this embodiment mode. The sputtering is performed using a titanium tube as a target and using argon and oxygen. Furthermore, helium can be introduced. The atmosphere is caused to include a large amount of oxygen, and the formation pressure is set to a high value to form TiOx with high photocatalytic activity. It is preferable to form TiOx while heating the film forming chamber or the substrate provided with the object to be processed.

Even when the TiOx-based film thus formed is very thin, it has a photocatalyst function.

Furthermore, a metal such as Ti (titanium), W (tungsten), Cr (chromium), Ta (tantalum), Ni (nickel) or Mo (molybdenum) is formed by a sputtering method, an evaporation deposition method or the like. The base film 201 made of material or its oxide is preferable as another base pretreatment. The base film 201 may be formed to a thickness of 0.01 nm to 10 nm. The base film 201 can be formed very thin and does not need to have a layer structure. When a heat-resistant metal material is used as the base film, after forming the conductive layers 215, 216, and 217 as the source-drain wiring layer, the bottom exposed on the surface is processed by performing any one of the following two steps The film system is better.

The first method is a step of insulating the base film 201 that does not overlap the conductive layers 215, 216, and 217 that function as the source-drain wiring layer and forming an insulating layer. In other words, the base film 201 that does not overlap with the conductive layers 215, 216, and 217 functioning as the source-drain wiring layer is oxidized and insulated. When the base film 201 is oxidized and insulated in this way, it is preferable to form the base film 201 having a thickness of 0.01 nm to 10 nm; therefore, the base film can be easily oxidized. Note that oxidation can be performed by exposure to oxygen or heat treatment.

The second method is a step of removing the base film 201 by etching using conductive layers 215, 216, and 217 functioning as source-drain wiring layers as masks. When this step is used, it is not limited to the thickness of the base film 201.

Alternatively, a method of performing plasma treatment on the formation area (formation surface) may be used as another bottom pretreatment. Plasma processing is performed by using air, oxygen or nitrogen as the processing gas, and its pressure is tens of Torr to 1000 Torr (133000 Pa), preferably, 100 Torr (13300 Pa) to 1000 Torr (133000 Pa) , More preferably 700 Torr (93100 Pa) to 800 Torr (106400 Pa), that is, atmospheric pressure or pressure close to atmospheric pressure, and the pulse voltage is applied under this condition. At this time, the plasma density is set at 1x10¹⁰m^-3To 1x00¹⁴m^-3, The so-called corona discharge or glow discharge. Surface modification can be performed without material dependence by using plasma processing using air, oxygen or nitrogen as the processing gas. Therefore, surface modification can be performed on any material.

As another method, a substance that acts as an organic material as an adhesive can be formed to improve the adhesion of the pattern formed by the droplet discharge method in its formation area. Organic material (organic resin material) (polyimide or acrylic) or a skeleton structure formed by the bond of silicon (Si) and oxide (O) and it contains at least hydrogen as a substitute or it contains fluorine and alkyl And at least one of aromatic hydrocarbons as a substitute material.

Next, the composition including the conductive material is discharged, and conductive layers 215, 216, and 217 functioning as source-drain wiring layers are formed. The conductive layers 215, 216, and 217 are formed by using a droplet discharge mechanism.

A composition including particles of metal such as silver, gold, copper, tungsten, or aluminum as its main component can be used as a conductive material for forming the conductive layers 215, 216, and 217. Since the source-drain wiring layer is preferably low impedance, any material selected from gold, silver, and copper dissolved or dispersed in a solvent is preferred considering the specific impedance value. The conductive material is preferably silver or copper with a low resistance value. Furthermore, conductive materials coated with other conductive materials to form several layers of particles can be used. For example, three-layer structure particles in which copper is coated with nickel boron (NiB) and then coated with silver can be used. This solvent is equivalent to esters such as butyl acetate, alcohols such as isopropanol, organic solvents such as propylene, or the like. The surface tension and its viscosity are appropriately adjusted by adjusting the concentration of the solvent or by adding a surfactant or the like.

Furthermore, the above-mentioned step of forming the base film 201 is performed by using a droplet discharge method as a bottom pretreatment for forming the conductive layer; however, this processing step can be performed after forming the conductive layers 215, 216, and 217 . For example, when a titanium oxide film is formed and an N-type semiconductor layer is formed thereon, the adhesion between the conductive layer and the N-type semiconductor layer is improved, although not shown.

After the N-type semiconductor layer is entirely formed on the conductive layers 215, 216, and 217, the N-type layer between the conductive layer 215 and the conductive layer 216 and the conductive layer 216 and the conductive layer 217 is used such as photoresist or polyimide. The mask layers 211, 212, and 219 made of the insulating material are removed by etching. If necessary, a semiconductor layer with a conductor can be formed. Then, the semiconductor layer 207 made of AS or SAS is formed by an evaporation phase growth method or a sputtering method. When the plasma CVD method is used, AS is made by using SiH which is the semiconductor material gas₄Or SiH₄And H₂The mixed gas is formed. SAS is formed by mixed gas, in which SiH₄Tie H₂Dilute three times 1000 times. When the SAS is formed of the above-mentioned gas, the semiconductor layer has good crystallinity on the surface side of the semiconductor layer. This is a top gate type TFT suitable for forming the gate electrode on the upper layer of the semiconductor layer.

Next, the gate insulating layer 205 is formed as a single layer or has a laminated structure by using a plasma CVD method or a sputtering method (refer to FIG. 11B). A three-layer stack of an insulating layer made of silicon nitride, an insulating layer made of silicon oxide, and an insulating layer made of silicon nitride is a particularly preferred structure.

Next, the conductive layers 202 and 203 of the gate electrode layer are formed by the droplet discharge method (refer to FIG. 11C). A composition including particles of a metal such as silver, gold, copper, tungsten, or aluminum as a main component can be used as a conductive material for forming this layer.

The semiconductor layer 207 and the gate insulating layer 205 are formed in positions corresponding to the source-drain wiring layers (conductive layers 215, 216, and 217) using the mask layers 213 and 214 formed by the droplet discharge method. In other words, the semiconductor layer is formed to straddle the conductive layer 215 and the conductive layer 216.

Next, the conductive layers 230 and 231 are formed by the droplet discharge method. The conductive layer 216 and the conductive layer 203 are electrically connected to each other.

Thereafter, the conductive layer (also referred to as the first electrode) 206 is formed by selectively discharging the composition including the conductive material to be in contact with the conductive layer 231. Furthermore, the conductive layer 206 may be in contact with the conductive layer 217. When light is emitted from the side of the substrate 200 or when a conductive EL display panel is to be manufactured, the conductive layer 206 can be formed by including: indium tin oxide (ITO), indium tin oxide containing silicon oxide (ITSO), oxide Zinc (ZnO), tin oxide (SnO)₂) Or a predetermined pattern of a composition of similar elements and formed by baking the composition. Although not shown, the photocatalyst substance may be formed in the region where the conductive layer 206 is formed, similar to the example in which the conductive layers 215, 216, and 217 are formed. The photocatalyst substance can improve the viscosity, and the conductive layer 206 can be formed into a desired pattern of thin lines. The conductive layer 206 becomes a first electrode that functions as a pixel electrode.

The source-drain wiring layer and the gate electrode can be directly connected via the gate electrode layer without using the conductive layer 230. In this example, the through hole is formed in the gate insulating layer 205, and before the conductive layers 202 and 203 of the gate electrode layer are formed, that is, the pair of conductive layers 216 and 216 of the source-drain wiring are formed. 217 was exposed. Thereafter, that is, the conductive layers 202 and 203 and the conductive layer 231 of the gate electrode layer are formed by a droplet discharge method. At this time, the conductive layer 903 is also used as the conductive layer 230 and connected to the conductive layer 216. Either dry etching or wet etching for etching is used; however, plasma etching that is dry etching is preferable.

Next, an insulating layer 220 that will become a stack (also referred to as a partition wall) is formed. Although not shown, a protective layer made of silicon nitride or silicon oxynitride can be completely formed on the insulating layer 220 to cover the thin film transistor. After the insulating layer is completely formed by a spin coating method or an immersion method, an opening is formed in the insulating layer 220 as shown in FIG. 12 by an etching process. When the insulating layer 220 is formed by the droplet discharge method, the etching process is not necessary. When the insulating layer 220 or the like is formed on a wide area by a droplet discharging method, it is formed by discharging the composition from a plurality of discharge openings of the nozzle in the droplet discharging device and being formed by guiding to make the number The lines overlap each other. Therefore, productivity is improved.

The insulating layer 220 is formed according to the conductive layer 206 of the first electrode to have through holes corresponding to the positions of the pixels to be formed.

According to the above steps, the top gate type (also referred to as staggered type) TFT and the TFT substrate connected to the conductive layer (first electrode layer) 206 on the substrate 200 are completed.

Before the electroluminescent layer 221 is formed, the moisture adsorbed on the inner side or on the surface of the insulating layer 220 is removed by performing heat treatment at 200° C. under atmospheric pressure. Furthermore, the heat treatment is performed under reduced pressure at a temperature of 200°C to 400°C, preferably 250°C to 350°C, and the electroluminescent layer 221 does not need to be exposed to the atmosphere under reduced pressure. The ground is formed by a vacuum evaporation deposition method or a droplet discharge method.

The electroluminescent layer 221 and the conductive layer 222 are laminated on the conductive layer 206 of the first electrode, and then, a light-emitting display device with a display function using a light-emitting element is completed (refer to FIG. 12).

As mentioned above, this step can be omitted in this embodiment mode without applying the exposure step using the photomask. Furthermore, even when the fifth or next produced glass substrate with a side exceeding 1000 mm is used, the EL display panel can be easily manufactured by directly forming various patterns on the substrate by the droplet discharge method.

Furthermore, highly reliable light-emitting display devices with improved adhesion and peel resistance can be manufactured.

[Embodiment Mode 7]

The embodiment modes of the present invention are described with reference to FIGS. 14A to 14D and FIGS. 15A and 15B. This embodiment mode illustrates an example having a different connection structure from the conductive layer 116 of the embodiment mode 1 through the gate insulating layer 105 and the conductive layer 103 of the wiring layer and the gate electrode layer. Therefore, repeated descriptions of the same parts or parts with similar functions are omitted.

The base film 101 for improving the adhesion is formed on the substrate 100 (refer to FIG. 14A). Note that an insulating layer may be formed on the substrate 100.

In this embodiment mode, a substance with a photocatalyst function is used as the base film 101 with a function of improving viscosity.

An example of forming a TiOx crystal having a predetermined crystal structure as a photocatalyst substance by a sputtering method is described in this embodiment mode. The sputtering is performed using a titanium tube as a target and using argon and oxygen. Furthermore, helium can be introduced. The atmosphere is caused to include a large amount of oxygen, and the formation pressure is set to a high value to form TiOx with high photocatalytic activity. It is preferable to form TiOx when heating the film forming chamber or the substrate provided with the object to be processed.

Even when the TiOx-based film thus formed is very thin, it has a photocatalyst function.

Furthermore, a metal such as Ti (titanium), W (tungsten), Cr (chromium), Ta (tantalum), Ni (nickel) or Mo (molybdenum) is formed by a sputtering method, an evaporation deposition method or the like. The base film 101 made of material or its oxide is preferable as another base pretreatment. The base film 101 may be formed to a thickness of 0.01 nm to 10 nm. The base film 101 can be formed very thin and does not need to have a layer structure. When a heat-resistant metal material is used as the base film, it is preferably exposed on the surface by performing any one of the following two steps after forming the conductive layers 102 and 103 that function as the source-drain wiring layer The bottom film becomes the gate electrode layer.

The first method is a step of insulating the base film 101 that does not overlap the conductive layers 102 and 103 and forming an insulating layer. In other words, the base film 101 that does not overlap the conductive layers 102 and 103 is oxidized and insulated. When the base film 101 is oxidized and insulated, in this way, it is preferable to form the base film 101 to have a thickness of 0.01 nm to 10 nm; therefore, the base film can be easily oxidized. Note that the oxidation can be performed by exposure to oxygen or by heat treatment.

The second method is a step of removing the base film 101 by etching using the conductive layers 102 and 103 as masks. When this step is used, there is no limit to the thickness of the base film 101.

Alternatively, a method of performing plasma treatment on the formation area (formation surface) may be used as another bottom pretreatment. Plasma processing uses air, oxygen or nitrogen as the processing gas and pressures ranging from tens of Torr (Torr) to 1000 Torr (133000 Pa), more preferably, 700 Torr (93100 Pa) to 800 Torr (106400 Pa) , That is, atmospheric pressure or pressure close to atmospheric pressure, and pulse voltage is applied under this condition. At this time, the plasma density is set at 1x10¹⁰m^-3To 1x10¹⁴m^-3, The so-called corona discharge or glow discharge. Surface modification can be performed without material dependence using plasma processing using air, oxygen or nitrogen as the processing gas. Therefore, surface modification can be performed on any material.

As another method, a substance that acts as an organic material as an adhesive can be formed to improve the adhesion of the pattern formed by the droplet discharge method in its formation area. It is possible to use organic materials (organic resin materials) (polyimide or propylene), or a skeleton structure formed by the bond of silicon (Si) and oxide (O) and containing at least hydrogen as a substitute or containing fluorine, At least one of alkyls and aromatic hydrocarbons is used as a substitute material.

Next, the composition including the conductive material is discharged, and the conductive layers 102 and 103 that function as gate electrodes are then formed. The conductive layers 102 and 103 are formed by using a droplet discharge mechanism.

The conductive material 140 that functions as a column after the formed conductive layer 103 is formed by a partially discharged composition including a conductive material. The conductive material 140 is preferably formed by depositing a column of the discharged composition. This is because when the cylindrical conductive material 140 is used, the pattern of the lower layer and the pattern of the upper layer are easily in contact with each other. The conductive material 140 may be made of the same material as the conductive layer 103 or made of different materials. It can be formed by discharging the composition in a pile.

After the conductive layer 103 is formed, the aforementioned under-pretreatment can be implemented on the conductive layer 103 to improve the viscosity again. Furthermore, after the conductive material 140 is formed as a pillar, it is preferable to perform a similar under-pretreatment. When the formation of a photocatalyst substance like TiOx is subjected to a primer pretreatment, the layer can have good viscosity.

Next, a gate insulating film is formed on the conductive layers 102 and 103 (refer to FIG. 14A).

Next, the conductive layer (also referred to as the first electrode) 106 is formed to the gate insulating film by selectively discharging the composition including the conductive material (refer to FIG. 14B). Although not shown, the photocatalyst substance may be formed in the region where the conductive layer 106 is formed similar to the example of forming the conductive layers 102 and 103. The photocatalyst substance can improve the viscosity, and the conductive layer 106 can be formed into a desired pattern of thin and thin lines. The conductive layer 106 becomes a first electrode to function as a pixel electrode.

Amorphous semiconductors are used as semiconductors in this embodiment mode. That is, the semiconductor layer 107 of an amorphous semiconductor is formed, and the insulating film is formed by, for example, a plasma CVD method and patterned to have a desired shape in a desired region, in order to form the channel protection film 109 and 110. At this time, the channel protection films 109 and 110 may be formed by exposing the back surface of the substrate using the gate electrode as a mask. Furthermore, polyimide, polyvinyl alcohol or the like can be dropped as a channel protective film by a droplet discharge method. Therefore, the exposure step can be omitted. Then, for example, the semiconductor layer having a conductivity of the N-type semiconductor layer 108 using the N-type amorphous semiconductor layer is formed by a plasma CVD method or the like (refer to FIG. 14C). If necessary, a conductive semiconductor layer may be formed.

Then, mask layers 111 and 112 made of insulating materials such as photoresist or polyimide are formed, and the semiconductor layer 107 and the N-type semiconductor layer 108 are patterned using the mask layers 111 and 112 at the same time. .

In this embodiment mode, the conductive material connected to the conductive layer 103 of the gate electrode layer by the conductive material 140 acting as a pillar passes through the gate electrode layer 105 and exists in the gate insulating layer 105 on. Therefore, the step of opening the via hole in the gate insulating layer can be omitted.

The conductive layers 115, 116, and 117 are formed by discharging a composition including a conductive material. Then, the N-type semiconductor layer is patterned using conductive layers 115, 116, and 117 as masks. It is noted that the photocatalyst material before forming the conductive layers 115, 116, and 117 can be optionally formed at the portions where the conductive layers 115, 116, and 117 are in contact with the gate insulating layer 105. Therefore, the conductive layer can be formed with good adhesion.

The conductive layer 117 functions as a source-drain wiring layer, and is formed to be electrically connected to a pre-formed first electrode. That is, the conductive layer 116 of the source-drain wiring layer can be electrically connected to the conductive layer 103 of the gate electrode layer via the conductive material 140 (refer to FIG. 15A). When the insulating layer or the like is left behind the conductive material 140 acting as a pillar, it can be removed by etching or the like.

Next, an insulating layer 120 that will become a stack (also referred to as a partition wall) is formed.

The insulating layer 120 is formed to have a through hole corresponding to the position of the pixel to be formed according to the conductive layer 106 of the first electrode.

According to the above steps, the TFT substrate of the EL display panel with the bottom gate type (also called reverse staggered type) channel protection TFT and the first electrode (first electrode layer) connected to the substrate 100 is completed.

The electroluminescent layer 121 and the conductive layer 122 are laminated on the conductive layer 106 of the first electrode, and then, a light-emitting display device with a display function using a light-emitting element is completed (refer to FIG. 15B).

As mentioned above, since there is no need to apply an exposure step using a photomask, this step can be omitted in this embodiment mode. Furthermore, even when the fifth or next produced glass substrate with a side exceeding 1000 mm is used, the EL display panel can be easily manufactured by directly forming various patterns on the substrate by the droplet discharge method.

Furthermore, a highly reliable light-emitting display device with improved adhesion and peel resistance is manufactured. Instead of forming a through hole in this embodiment mode, a method of connecting pillars is used, which can be freely combined with the above embodiment.

[Example 1]

Thin film transistors can be formed by applying the present invention, and light-emitting display devices can be formed by using thin film transistors. In an example of using a light-emitting element as a display element and using an N-type transistor as a transistor for driving the light-emitting element, the light emission from the light-emitting element is any one of bottom emission, top emission, and dual emission. Here, the laminated structure of the light-emitting element used in any example is described with reference to FIGS. 17A to 17C.

That is, the transistor 451 of the channel protection thin film transistor formed in Embodiment Mode 1 by applying the present invention is used in this embodiment.

First, in an example of emitting light to the side of the substrate 450, that is, an example of bottom emission is described with reference to FIG. 17A. In this example, the source-drain wirings 452 and 453 electrically connected to the transistor 451, the first electrode 454, the electroluminescent layer 455, and the second electrode 456 are sequentially stacked. Next, in an example of emitting light to the opposite side of the substrate 450, that is, an example of top emission is described with reference to FIG. 17B. The source-drain wirings 461 and 462, the first electrode 463, the electroluminescent layer 464, and the second electrode 465 electrically connected to the transistor 451 are sequentially stacked. Even though the first electrode 463 transmits light, the light is reflected by the wiring 462 and is emitted to the opposite side of the substrate 450 according to the above structure. Note that the light transmission material does not need to be used for the first electrode 463 in this structure. Finally, in the example of emitting light to the side of the substrate 450 and the opposite side, that is, the example of dual emission is described with reference to FIG. 17C. The source-drain wirings 470 and 471, the first electrode 472, the electroluminescent layer 473, and the second electrode 474 electrically connected to the transistor 451 are sequentially stacked. At this time, when both the first electrode 472 and the second electrode 474 are made of a light-transmitting material or formed to have a thickness capable of transmitting light, dual emission is achieved.

The light-emitting element has a structure in which an electroluminescent layer is sandwiched between the first electrode and the second electrode. It is necessary to consider the work function to select the materials of the first electrode and the second electrode. Both the first electrode and the second electrode can be anodes or cathodes, depending on the pixel structure. Because the polarity of the driving TFT is an N-channel type in this embodiment mode, the first electrode is preferably a cathode, and the second electrode is preferably an anode. When the polarity of the driving TFT is a P channel type, the first electrode is preferably an anode, and the second electrode is preferably a cathode.

When the first electrode is an anode, the electroluminescent layer is preferably stacked from the anode to HIL (hole injection layer), HTL (hole transport layer), EML (emission layer), ETL (electron transport layer) and EIL (Electron Injection Layer) is formed. When the first electrode is a cathode, the structure of the electroluminescent layer becomes reversed. It is preferably to stack EIL (electron injection layer), ETL (electron transport layer), EML (emission layer), HTL (hole transport layer), HIL (hole injection layer) and anode in sequence, the anode is from the cathode Side of the second electrode. Note that the electroluminescent layer has a single-layer structure or a combined structure and a laminated structure.

The materials showing red (R), green (G), and blue (B) luminescence can be formed as the electroluminescent layer by the choice of the evaporation deposition method using separate evaporation masks or the like. Materials that display red (R), green (G) and blue (B) luminescence (such as low-molecular-weight or high-molecular-weight materials) can be formed by the droplet discharge method. The droplet discharge method is better because the RGB Coloring can be implemented separately in this example without using a mask similar to a color filter.

Especially, CuPc or PEDOT is used as HIL; α-NPD is used as HTL; BCP or Alq₃Used as ETL; BCP: Li or CaF₂Used as EIL. Furthermore, for example, Alq doped with dopants corresponding to R, G, and B emission colors₃(The example of DCM or similar elements in R, and the example of DMQD or similar elements in G) can be used as EML.

Note that the electroluminescent layer does not limit the above materials. For example, the hole injection characteristics can be enhanced by co-evaporating oxides such as molybdenum oxide (MoOx: X=2 to 3) and α-NPD or rubrene instead of using CuPc or PEDOT. Organic materials (including low-molecular-weight or high-molecular-weight materials) or composite materials of organic and inorganic materials can be used as the material of the electroluminescent layer.

Furthermore, color filters may be formed on the opposite substrate of the substrate 450, although not shown in FIGS. 17A to 17C. The color filter can be formed by a droplet discharge method; in this example, the photo-paste treatment can be implemented as the above-mentioned bottom pretreatment. Due to the base film of the present invention, the color filter can be formed in a desired pattern with good adhesion. High-resolution display can be implemented by using color filters. This is because the color filter can adjust the wide peak to the sharp peak in each emission spectrum of RGB.

The above describes examples of materials forming RGB that display each light emission; however, full-color display can also be implemented by forming materials that display a single color of light emission and combining materials with color filters or color conversion layers. For example, in the case of forming an electroluminescent layer that displays white or orange light emission, full-color display can be implemented by separately disposing a color filter, a color conversion layer, or a combination of a color filter and a color conversion layer. For example, a color filter or a color conversion layer may be formed on a second substrate (sealing substrate), and then, attached to this substrate. As mentioned above, the luminescent materials of the single color, the color filter and the color conversion layer can all be formed by the droplet discharge method.

Naturally, a monochromatic luminous display can be implemented. For example, the area-color type light-emitting display device can be formed by using monochromatic light emission. The passive array display unit is suitable for the regional color type, and can mainly display characters and symbols.

Materials with low working function can be used for the cathode in the above structure; for example, Ca, Al, CaF, MgAg, AlLi or similar elements are preferred. The electroluminescent layer may be any of a single-layer type, a laminated type, and a mixed type without an interface between layers. Any one of the following materials can be used: single-weight materials, triple-layer materials, and their combination materials, including low-molecular-weight materials, high-molecular-weight materials, and organic materials with intermediate molecular-weight materials, and molybdenum oxide with superior electron injection characteristics Represented by inorganic materials, and composite materials of organic materials and inorganic materials. The first electrodes 454, 463, and 742 are formed by using a transparent conductive film that transmits light; for example, a transparent conductive film of indium oxide mixed with 2% to 20% zinc oxide (ZnO) and ITO or ITSO is used. Note that plasma treatment in oxygen or heat treatment in vacuum is preferably performed before forming the first electrodes 454, 463, and 472. The partition wall (also called the stack) is formed by using materials containing silicon, organic materials, or compound materials. Furthermore, porous membranes can be used. Note that it is preferable to form the partition wall by using photosensitive or non-photosensitive material such as polyimide or acrylic, because the side surface becomes a shape in which the radius of curvature continuously changes and the upper film is formed without breaking. This embodiment can be freely combined with the above embodiments.

[Example 2]

That is, the appearance of a panel of a mode of the light-emitting display device to which the present invention is applied is described with reference to FIG. 20.

In the panel shown in FIG. 20, the driving IC with the driving circuit formed around the pixel portion 751 is mounted by the COG (chip on glass) method. Of course, the driver IC can be installed by the TAB (Automatic Combination) method.

The substrate 750 is fixed to the counter substrate 753 with a sealant 752. The pixel portion 751 can use a conductive EL element as a display medium. Each of the driver ICs 755a and 755b and the driver ICs 757a, 757b, and 757c may be an integrated circuit formed by using a single crystal semiconductor, or an equivalent formed by using a TFT, which is formed by using a polycrystalline semiconductor. manufacture. The signal or power is supplied to the driver ICs 755a and 755b and the driver ICs 757a, 757b and 757c through FPC756a and 756b and FPC754a, 754b and 754c, respectively.

[Example 3]

Referring to FIG. 23, the structure of a light-emitting display device with a display function according to the present invention will be described. FIG. 23 is a top view showing a brief overview of the light-emitting display device, in which the pixel portion (display portion) 6102 and the protection circuits 6103 and 6104 are formed on the substrate 6100, and are connected to the signal line side driver IC 6107 and scan via wires Line side driver IC6104. When an amorphous semiconductor or a microcrystalline semiconductor system is used as an element constituting the pixel portion 6102, preferably, the driver ICs 6107 and 6108 are mounted on the substrate by a known method such as the COG method or the TAB method, as shown in the figure. And these drive ICs are used as drive circuits. When a microcrystalline semiconductor system is used as an element constituting the pixel portion 6102, the scanning line side driving circuit may be composed of a microcrystalline semiconductor, however, the driving IC 6107 may be mounted on the signal line side. Unlike the structure described above, a part of the scanning line side driving circuit and a part of the signal line side driving circuit can be formed on a substrate, and the driving IC can be used to replace the other part. In other words, there are various structures for mounting the driver IC, and the present invention can utilize any structure.

Next, referring to FIGS. 24A to 24C, a pixel circuit of a light-emitting display device with a display function according to the present invention will be described. FIG. 24A is an equivalent circuit diagram of the pixel 6101. The pixel 6101 includes: TFT 6110, used to control the input of video signals to the pixel 6101; TFT 6111, used to control the amount of current flowing between a pair of electrodes of the light-emitting element 6113; and capacitor element 6112, used to store the gate source of the TFT 6111 The voltage is in the area surrounded by the signal line 6114, the power supply lines 6115 and 6117, and the scan line 6116. Although the capacitor element 6112 is shown in FIG. 24B, when the capacitor element can be replaced with the gate capacitor of the TFT6111 or another parasitic capacitor, it is not necessary to provide it.

FIG. 24B shows a pixel circuit with the structure of the pixel 6101 shown in FIG. 24A newly provided with a TFT 6118 and a scanning line 6119. The current supply to the light-emitting element 6113 can be forcibly stopped by arranging the TFT 6118. Therefore, the illumination period can be started at the same time as the start of the write period or immediately after the start without waiting for the signal to be written to all pixels. Therefore, the load ratio is improved, and moving images can be displayed particularly favorably.

FIG. 24C shows a pixel circuit in which the TFT 6111 of the pixel 6101 shown in FIG. 24B is removed and the pixel 6101 is newly provided with TFTs 6125 and 6126 and wiring 6127. In this structure, the gate electrode of the TFT 6125 is connected to the wiring 6127 having a constant potential. Therefore, the constant potential of the gate electrode is fixed, and the TFT 6125 is operated in the saturation region. Furthermore, the video signal used to transmit information on the non-illumination or illumination of the pixel is input to the gate electrode of the TFT6126 through the TFT6110. The TFT6126 is connected in series to the TFT6125 and operates in the linear region. The source-drain voltage value of the TFT 6126 operating in the linear region is low, so that slight changes in the gate source voltage of the TFT 6126 will not adversely affect the amount of current flowing through the light-emitting element 6113. Therefore, the amount of current flowing through the light-emitting element 6113 is determined by the TFT 6125 operating in the saturation region of the TFT 6125. According to the present invention having the above-mentioned structure, the change in the light emission of the light-emitting element 6113, which is caused by the change in the characteristics of the TFT 6125, can be improved, thereby improving the image quality. Preferably, the channel length L of TFT6125₁And channel width W₁Channel length L with TFT6126₂And channel width W₂Is set to satisfy L₁/W₁: L₂/W₂=5 to 6000:1. From the viewpoint of the manufacturing process, it is also best that the two TFTs have the same conductivity type. Furthermore, the TFT 6125 may be an enhanced mode TFT or a depletion mode TFT.

FIG. 16A is a top view of the pixel circuit having the above structure, and FIG. 16B is an equivalent circuit diagram thereof. In FIGS. 16A and 16B, the TFTs 1601 and 1602 and the capacitor element 1604 are included in the area surrounded by the drain line 1606, the power supply line 1607, and the scan line 1605. The pixel electrode 1603 is connected to the source or drain of the TFT 1602.

The light-emitting display device with display function according to the present invention can use analog video signals or digital video signals. When a digital video signal is used, the video signal changes depending on whether the video signal uses voltage or current. In other words, when the light-emitting element emits light, the video signal input to the pixel includes a constant voltage video signal and a constant current video signal. The constant voltage video signal includes a constant voltage video signal in which the voltage applied to the light emitting element is constant and a constant voltage video signal in which the current flowing through the light emitting element is constant. Furthermore, the constant current video signal includes a constant current video signal in which the voltage applied to the light emitting element is constant and a constant current video signal in which the current flowing through the light emitting element is constant. The driving method in which the voltage applied to the light emitting element is constant means constant voltage driving, however, the driving method in which the current flowing to the light emitting element is constant means constant current driving. As for the constant current drive, the constant current flows irrespective of the change in the resistance of the light emitting element. The light-emitting display device and the driving method thereof according to the present invention can use a video signal using a voltage or a video signal using a current. Furthermore, constant voltage drive or constant current drive can be used. This embodiment can be freely combined with the above-mentioned embodiment modes and embodiments.

[Example 4]

An example of the protection circuit included in the light-emitting display device of the present invention is described. The protection circuit is composed of one or several elements selected from TFT, diode, resistance element, capacitor element and the like. Several structures and operations of the protection circuit are described below. First, with reference to FIGS. 25A to 26C, the structure of the equivalent circuit diagram of the protection circuit which is arranged between the external circuit and the internal circuit and corresponds to an input terminal will be described. The protection circuit shown in FIG. 25A includes P-type TFTs 7220 and 7230, capacitor elements 7210 and 7240, and resistor element 7250. The resistor element 7250 has a two-terminal resistance, wherein one terminal of the resistor element is provided with an input voltage Vin (hereinafter referred to as Vin), and the other terminal is provided with a low potential voltage VSS (hereinafter referred to as VSS). When the input terminal is not supplied with Vin, the resistor element 7250 is provided to lower the potential of the wiring to VSS. The resistance value of the resistor element is set sufficiently higher than the resistance of the wiring.

When VSS is higher than the high potential voltage VDD (hereinafter referred to as VDD), the TFT 7122 is turned on and the TFT 7123 is turned off with respect to the gate source voltage. Therefore, VDD is supplied to the wiring via the TFT7122. Therefore, due to noise and the like, even when Vin exceeds VDD, the voltage supplied to the wiring does not exceed VDD. On the other hand, when Vin is lower than VSS, the TFT 7122 is turned off and the TFT 7123 is turned on with respect to the gate-source voltage. In this way, VSS is supplied to the wiring. Therefore, due to noise and the like, even when Vin becomes lower than VDD, the voltage supplied to the wiring does not exceed VDD. Furthermore, the impulse noise can be reduced to the voltage supplied from the input terminal by the capacitor elements 7121 and 7124; therefore, the voltage can be reduced to a certain extent due to sudden changes in noise.

Due to the configuration of the protection circuit having the above-mentioned structure, the voltage of the wiring is maintained in the range of VSS to VDD, and is protected from excessively high or low application beyond the range. Furthermore, the input terminal to which the signal is input is provided with a protection circuit; therefore, when the input of the signal is stopped, the voltage of all wirings supplied with the signal can be maintained at a constant level (in this embodiment at VSS). In other words, the protection circuit acts as a short-circuit ring, which can short-circuit the wiring when a signal is not input. Therefore, electrostatic damage due to the voltage difference between wirings can be prevented. Furthermore, when a signal is input, the signal supplied to the wiring will not be dragged to VSS because the resistance value of the resistor element 7250 is sufficiently high.

FIG. 25B shows an equivalent circuit diagram of the protection circuit in which the P-type TFTs 7122 and 7123 are replaced by diodes 7126 and 7127 with rectification. FIG. 26A shows an equivalent circuit diagram of the protection circuit in which P-type TFTs 7122 and 7123 are replaced by TFTs 7350, 7360, 7370, and 7380. The protection circuit shown in FIG. 26B of the protection circuit having a structure different from the above structure includes resistor elements 7128 and 7129 and a transistor 7130. The protection circuit shown in FIG. 26C includes resistor elements 7280 and 7290, P-type TFT 7310, and N-type TFT 7320. In each structure of FIGS. 26B and 26C, the terminal 7330 is connected to a wiring or the like. When the potential of the wiring or the like changes suddenly, the N-type TFT 7300 or the P-type TFT 7310 and the N-type TFT 7320 are turned ON so that current flows from the terminal 7330 to the terminal 7340. Therefore, a sudden change in the potential of the wiring or the like connected to the terminal 7330 can be alleviated, and damage or destruction of the element can be prevented. The components constituting the above protection circuit are preferably made of amorphous semiconductors superior to pressure tightness. This embodiment can be freely combined with the above embodiment modes.

[Example 5]

The EL TV can be completed by using the light-emitting display device formed according to the present invention. Figure 21 is a block diagram showing the main structure of the EL TV. The EL display panel includes an example of the structure shown in FIG. 20, in which the scanning line side driving circuit and the signal line side driving circuit are mounted on the pixel portion 751 and its surroundings by the COG method, and only one pixel portion is The formation and scanning line side driving circuit and the signal line side driving circuit are mounted by the TAB method, and the TFT is formed using SAS, the pixel portion and the scanning line side driving circuit are integrally formed on the substrate, and the signal The line-side drive circuit is installed separately as a drive IC. Any mode can be used.

Another external circuit may include a video signal amplifier circuit 805 that amplifies the video signal in the signal received by the tuner 804, and converts the output signal into a video signal processing circuit that conforms to the color difference signals of red, green, and blue. , And the analog on the input side of the video signal. The control circuit 807 outputs signals to the scanning line side and the signal line side. In the digital driving example, the signal dividing circuit 808 can be provided on the signal line side, and the input digital signal can be divided into m parts and supplied.

The audio signal among the signals received by the tuner 804 is transmitted to the audio signal amplifier circuit 809, and is supplied to the speaker 813 via the audio signal processing circuit 810, and is output. The control circuit 811 receives the control information on the receiving station (receiving frequency) or the volume from the input unit 812, and transmits this signal to the tuner 804 and the audio signal processing circuit 810.

The television can be completed as shown in FIG. 19 by incorporating the EL module including such an external circuit into the cabinet 2001. The display screen is formed by using an EL display module and speakers, and operating switches and the like can be provided as attachments. Therefore, the television can be completed according to the present invention.

Furthermore, the reflected light entering from the outside can be blocked by using wave plates and polarization plates. 1/4 wave plate and half wave plate are used as wave plates and can be designed to control light. The module has a laminated structure of TFT element substrate/light emitting element/sealing substrate (sealant)/wave plate (1/4 wave plate and half wave plate)/polarization plate, and the light incident from the light emitting element passes through it and is Shot on the side of the polarizing plate. The wave plate and the polarizing plate can be arranged on the light emitting side. In the case of a dual-emission light-emitting display device that emits light on both sides, the wave plate and the polarization plate may be provided on both sides. Furthermore, the anti-reflection film can be provided outside the polarizing plate. Make it possible to display high-resolution fine images.

The display panel 2002 using EL elements is integrated in the casing 2001. Not only can general TV broadcasts be received by the receiver 2005, but also one-way information communication (from transmitter to receiver) or two-way information communication (between transmitter and receiver or between two receivers) can be wired or via the module 2004 It is achieved by wirelessly connecting to the communication network. The TV set can be operated by a remote control unit 2006 that is integrated into the cabinet or separately provided, and the display portion 2007 that displays the information to be output can be included in the remote control unit.

Furthermore, the television can also be made into a structure with a display channel or volume by forming a secondary screen 2008 and a main screen 2003 using a second display panel. The main screen 2003 and the sub screen 2008 can be formed by using an EL display panel. Alternatively, the main screen 2003 can be formed by using an EL display panel with an excellent viewing angle, and the secondary screen 2008 can be formed by using a liquid crystal display panel capable of displaying on the above structure with low power consumption. Furthermore, in an example where low power consumption is prioritized, the main screen 2003 can be formed by using a liquid crystal display panel, and the secondary screen 2008 can be formed by using an EL display panel, and then the main screen can be turned on and off. Even when such a large-size substrate is used, a highly reliable light-emitting display device can be formed by applying the present invention, and therefore, a large number of TFTs or electronic components are used.

Of course, the present invention is not limited to televisions, and can be applied to various uses, especially as large-area display media, such as information display boards in railway stations, airports or similar places, or advertising display boards on the street, and personal computers. Monitor.

[Example 6]

Various light-emitting display devices can be manufactured by applying the present invention. That is, the present invention can be applied to various electronic devices, in which the light-emitting display device is combined with the display portion.

Such electronic devices can be the following products: video cameras, digital cameras, projectors, head-mounted displays (eye protection displays), car navigation systems, car audio, personal computers, game consoles, personal digital assistants (mobile computers) , Mobile phones, e-books, or the like), video reproduction devices including recording media (especially, devices capable of processing data in recording media such as digital video discs (DVD) and having a display capable of displaying images of the data) and the like Things. Examples of this are shown in Figures 18A to 18C and Figures 27A and 27B.

FIG. 18A shows a laptop personal computer, which includes a main body 2101, a casing 2102, a display portion 2103, a keyboard 2104, an external port 2105, a mouse 2106, and the like. The present invention is applied to the manufacture of the display portion 2103. When the present invention is applied, even if a laptop personal computer is miniaturized and wiring or the like becomes sophisticated, high-reliability and high-quality images can be displayed.

18B shows a video reproduction device including a recording medium (especially a DVD reproduction device), which includes: a main body 2201, a cabinet 2202, a display portion A 2203, a display portion B 2204, a recording medium (DVD or the like) reading portion 2205, and operation The keyboard 2206, the speaker portion 2207, and the like. The display part A2203 mainly displays image information, and the display part B2204 mainly displays text information. The present invention is applied to the manufacture of the display portion A2203 and the display portion B2204. When the present invention is applied, even if the image reproducing device is miniaturized and wiring or the like becomes precise, high-reliability and high-quality images can be displayed.

18C shows a mobile phone, which includes a main body 2301, an audio output unit 2302, an audio input unit 2303, a display unit 2304, an operation switch 2305, an antenna 2306, and the like. By applying the light-emitting display device manufactured according to the present invention to the display portion 2304, high-reliability and high-quality images can be displayed even on mobile phones with minimization and sophisticated wiring or the like.

FIG. 27A shows a camera, which includes a main body 2401, a display portion 2402, a housing 2403, an external port 2404, a remote control receiving portion 2405, an image receiving portion 2406, a battery 2407, an audio input portion 2408, operation keys 2409, and the like. The present invention can be applied to the display portion 2402, which is a dual-emission light-emitting display device. 27A and 27B show the effects displayed on the display portion 2402. FIG. 27A shows the image being photographed, and FIG. 27B shows the image that can be seen from the vehicle being photographed. Because the light-emitting display device of the present invention is a transmission type and the effects can be displayed on both sides, the image being photographed can be seen from the side of the eyepiece. Therefore, it is convenient to take pictures by yourself. Furthermore, in addition to cameras, the present invention can also be applied to digital cameras or the like, and similar effects can be obtained. By applying the light-emitting display device manufactured according to the present invention to the display portion 2402, high-reliability and high-quality images can be displayed even in a camera with minimization and sophisticated wiring or the like. This embodiment can be freely combined with the above embodiment modes and embodiments.

[Example 7]

The effect of improving the viscosity of the bottom pretreatment of the present invention is experimentally evaluated.

TiOx is formed by spraying, and a composition including silver as a conductive material is discharged and baked at a temperature of 230°C. Sixteen silver wires are formed to have a length of 1 cm, a width of 200 μm to 300 μm, and 4000<img file="TW200529446A_D0001.tif" />Up to 5000<img file="TW200529446A_D0002.tif" />the height of. Since the tensile test using Kapton tape is performed on the formed silver wiring, the silver wiring will not peel off. Furthermore, since it was immersed in a 0.5wt% HF solution for 1 minute and washed with running water, none of the 16 silver wires peeled off. Therefore, it was confirmed that the viscosity was improved by the under-pretreatment of forming a TiOx film with photocatalytic function.

The Ti film is formed by a sputtering method to 10-50. The composition including silver as a conductive material was similarly discharged into the TiOx film formed after being baked at 230°C, and baked at 230°C again. Therefore, 16 silver wires are formed to have a length of 1 cm, a width of 200 μm to 300 μm, and 4000<img file="TW200529446A_D0003.tif" />Up to 5000<img file="TW200529446A_D0004.tif" />the height of. It is confirmed that the formed Ti film has 1×10⁶(Ω/cm²) Or higher resistors, and are insulated. Since the tensile test using Kapton tape is performed on the formed silver wiring, the silver wiring will not peel off. Furthermore, since it was immersed in a 0.5wt% HF solution for 1 minute and washed with running water, none of the 16 silver wires peeled off. Therefore, it was confirmed that the viscosity was improved by the under-pretreatment for forming the TiOx film of the present invention.

As a comparative example, the above-mentioned treatment using HF solution was performed on the silver wiring formed in the area where such under-pretreatment had not been performed. Therefore, the silver wiring was peeled off and only about a few wirings remained.

Therefore, the bottom pretreatment of the present invention can improve the viscosity and provide a highly reliable light-emitting display device.

<p>100Substrate</p><p>101Bottom film</p><p>102 and 103Conductive layer</p><p>104Insulation layer</p><p>105Gate insulation layer</p><p>106Conductive layer</p><p>107Semiconductor layer</p><p>108N-type semiconductor layer</p><p>109 and 110channel protective film</p><p>111 and 112Mask layer</p><p>113 and 114Mask layer</p><p>115, 116 and 117Conductive layer</p><p>118Through hole</p><p>120Insulation layer</p><p>121Electroluminescent layer</p><p>122Conductive layer</p><p>140Conductive material</p><p>150Sealing substrate</p><p>151Sealant</p><p>160Gate wiring layer</p><p>161Anisotropic conductive layer</p><p>162Flexible Printed Circuit Board (FPC)</p><p>200Substrate</p><p>201Bottom film</p><p>202 and 203Conductive layer</p><p>205Gate insulation layer</p><p>206Conductive layer</p><p>207Semiconductor layer</p><p>211, 212 and 219Mask layer</p><p>213 and 214Mask layer</p><p>215, 216 and 217Conductive layer</p><p>220Insulation layer</p><p>221Electroluminescent layer</p><p>222Conductive layer</p><p>230 and 231Conductive layer</p><p>300Substrate</p><p>301Bottom film</p><p>302 and 303Conductive layer</p><p>306Conductive layer</p><p>307Semiconductor layer</p><p>308N-type semiconductor layer</p><p>309 and 310channel protective film</p><p>311 and 312Mask layer</p><p>313 and 314Mask layer</p><p>315, 316 and 317Conductive layer</p><p>318Through hole</p><p>320Insulation layer</p><p>321Electroluminescent layer</p><p>322Conductive layer</p><p>341, 342 and 343Insulation layer</p><p>450Substrate</p><p>451Transistor</p><p>452 and 453source-drain wiring</p><p>454First electrode</p><p>455Electroluminescent layer</p><p>456and the second electrode</p><p>461 and 462source-drain wiring</p><p>463First electrode</p><p>464Electroluminescent layer</p><p>465Second electrode</p><p>470 and 471source-drain wiring</p><p>472First electrode</p><p>473Electroluminescent layer</p><p>474Second electrode</p><p>500Substrate</p><p>501Bottom film</p><p>502 and 503Conductive layer</p><p>504 and 505Gate insulation layer</p><p>506Conductive layer</p><p>507Semiconductor layer</p><p>508N-type semiconductor layer</p><p>509 and 510Passage Protective Film</p><p>511 and 512Mask layer</p><p>513 and 514Mask layer</p><p>515, 516 and 517Conductive layer</p><p>518Through hole</p><p>520Insulation layer</p><p>521Electroluminescent layer</p><p>522Conductive layer</p><p>700Substrate</p><p>701Bottom film</p><p>702 and 703Conductive layer</p><p>704 and 705Gate insulation layer</p><p>706Conductive layer</p><p>707Semiconductor layer</p><p>708N-type semiconductor layer</p><p>711 and 712Mask layer</p><p>713 and 714Mask layer</p><p>715, 716 and 717Conductive layer</p><p>718Through hole</p><p>720Insulation layer</p><p>721Electroluminescent layer</p><p>722Conductive layer</p><p>750Substrate</p><p>751Pixel</p><p>752Sealant</p><p>753Opposite substrate</p><p>754a, 754b and 754cFPC</p><p>755a and 755bDriver IC</p><p>756a and 756bFPC</p><p>757a, 757b and 757cDriver IC</p><p>804Tuner</p><p>805Video signal amplifier circuit</p><p>807Control circuit</p><p>808Signal Dividing Circuit</p><p>809Audio signal amplifier circuit</p><p>810Audio signal processing circuit</p><p>811Control circuit</p><p>812Input part</p><p>813Speaker</p><p>900Substrate</p><p>901Bottom film</p><p>902 and 903Gate electrode layer</p><p>905Gate insulation layer</p><p>906Conductive layer</p><p>907Conductor layer</p><p>911, 912 and 919Mask layer</p><p>915, 916 and 917Conductive layer</p><p>920Insulation layer</p><p>921Electroluminescent layer</p><p>922Conductive layer</p><p>930 and 931conductive layer</p><p>1400Substrate</p><p>1403Droplet discharge mechanism</p><p>1404Imaging mechanism</p><p>1405head</p><p>1407Control mechanism</p><p>1409Image processing mechanism</p><p>1410Computer</p><p>1411, TFT1601 and 1602 mark</p><p>1603Light-emitting element</p><p>1604Capacitor</p><p>1605Source line</p><p>1606Dip Line</p><p>1607Power Supply Line</p><p>2001Chassis</p><p>2002Display Panel</p><p>2003Main screen</p><p>2004Module</p><p>2005Receiver</p><p>2006Remote control unit</p><p>2007Display</p><p>2008second screen</p><p>2101Main body</p><p>2102Chassis</p><p>2103Display</p><p>2104Keyboard</p><p>2105External port</p><p>2106Mouse</p><p>2201Main body</p><p>2202Chassis</p><p>2203Display A</p><p>2204Display part B</p><p>2205Recording media reading section</p><p>2206Operation keyboard</p><p>2207Speaker Department</p><p>2301Main body</p><p>2302Audio output section</p><p>2303Audio input section</p><p>2304Display</p><p>2305Operation switch</p><p>2306antenna</p><p>2401Main body</p><p>2402Display</p><p>2403Chassis</p><p>2404External port</p><p>2405Remote control receiver</p><p>2406Image Receiver</p><p>2407Battery</p><p>2408Audio input section</p><p>2409Operation keys</p><p>6100Substrate</p><p>6101 pixels</p><p>6102Pixel</p><p>6103Protection circuit</p><p>6104Driver IC</p><p>6107Signal line side driver IC</p><p>6110TFT</p><p>6111TFT</p><p>6112Capacitor components</p><p>6113Light-emitting element</p><p>6114Signal line</p><p>6115 and 6117Power supply line</p><p>6116Scanning line</p><p>6118TFT</p><p>6119Scanning line</p><p>6125 and 6126TFT</p><p>6127Wiring</p><p>7121 and 7124Capacitor components</p><p>7122TFT</p><p>7123TFT</p><p>7126 and 7127Diode</p><p>7128 and 7129Resistor components</p><p>7130Transistor</p><p>7220,7230P type TFT</p><p>7210,7240Capacitor components</p><p>7250Resistor element</p><p>7280 and 7290Resistor components</p><p>7300N-type TFT</p><p>7310P type TFT</p><p>7320N-type TFT</p><p>7330Terminal</p><p>7340Terminal</p><p>7350, 7360, 7370 and 7380TFT</p>

1A to 1D show a method for manufacturing the light-emitting display device of the present invention.

2A and 2B show a method for manufacturing the light-emitting display device of the present invention.

3A to 3D show a method for manufacturing the light-emitting display device of the present invention.

4A and 4B show a method for manufacturing the light-emitting display device of the present invention.

5A to 5D show a method for manufacturing the light-emitting display device of the present invention. .

6A and 6B show a method for manufacturing the light-emitting display device of the present invention.

7A to 7D show a method for manufacturing the light-emitting display device of the present invention.

8A and 8B show a method for manufacturing the light-emitting display device of the present invention.

9A to 9D show a method for manufacturing the light-emitting display device of the present invention.

Fig. 10 shows a method for manufacturing the light-emitting display device of the present invention.

11A to 11D show a method for manufacturing the light-emitting display device of the present invention.

Fig. 12 shows a method for manufacturing the light-emitting display device of the present invention.

FIG. 13 shows a method for manufacturing the light-emitting display device of the present invention.

14A to 14D show a method for manufacturing the light-emitting display device of the present invention.

15A and 15B show a method for manufacturing the light-emitting display device of the present invention.

16A and 16B are top views and circuit diagrams of the pixel circuit in the light-emitting display device of the present invention.

17A to 17C show the light-emitting display device of the present invention.

18A to 18C show an electronic device to which the present invention is applied.

Figure 19 shows an electronic device to which the present invention is applied.

Fig. 20 is a top view of a panel of a mode of the semiconductor device to which the present invention is applied.

FIG. 21 is a block diagram showing the main structure of the electronic device of the present invention.

Fig. 22 shows the structure of a droplet discharge device applicable to the present invention.

Fig. 23 shows a light-emitting display device to which the present invention is applied.

24A to 24C show the pixel circuit of the light-emitting display device to which the present invention is applied.

25A and 25B show the protection circuit included in the light-emitting display device of the present invention.

26A to 26C show the protection circuit included in the light-emitting display device of the present invention.

27A and 27B show an electronic device to which the present invention is applied.