Fluid ejection device metal layer layouts

Metal layer layout of fluid ejection device

The present invention relates to the metal layer arrangement of a fluid ejection device.

Background of the invention

Several fluid ejection devices include, for example, inkjet print heads, which have a vertical row of nozzles arranged in a row on the wafer and define a long strip area. The firing resistor inside the firing chamber located below the nozzle is activated, thereby heating the fluid in the chamber, causing the fluid to expand, which is ejected by the nozzle. A circuit fabricated on a substrate structure using standard thin-film technology includes a conductive path to carry the power, address signal path, logic element, and transmitting transistor for transmitting the transmitting resistor. This kind of circuit is used to properly activate the emission resistor and operate the emission resistor. The capacitive coupling between the address bus and the live wire or power bus may generate noise and cause performance degradation.

The cost of the fluid ejection device can be reduced by reducing the device die size. However, the shrinking of the crystal grain size of such devices may have an adverse effect on the size of the electrical wires and tubes, resulting in high energy changes and reduced printing quality. The wire tube contains gold, which is easy to delaminate.

The present invention is a fluid ejection device, comprising: a first metal layer including at least an address path portion and a non-address path portion; a second metal layer, which is laid on the first metal layer, The second metal layer includes a first metal part, which is only laid on the non-address path part of the first metal layer, wherein the first part is a conductive part.

The present invention is also a fluid ejection device, including: a first metal layer including a resistor portion, the resistor portion defining a strip height; and a second metal layer located above the first metal layer The second metal layer includes a second metal layer grounding portion routed through the strip height.

The present invention is also a fluid ejection device comprising: a first metal layer including a transistor part, a ground part extending roughly parallel to the transistor part, and a logic part extending roughly parallel to the transistor part, the The logic part is separated from the transistor part by a distance greater than 5 microns, and the ground part extends between the transistor part and the logic part.

Schematic description

The features and principles of the present invention can be easily understood by those skilled in the art from the detailed description of the foregoing specific embodiments with reference to the accompanying drawings. Those with the accompanying drawings:

Figure 1 shows a block diagram of the relative positions of metal parts in a specific embodiment of a fluid ejection device.

Figure 2 shows a specific embodiment of the first metal layer of the fluid ejection device.

Fig. 3 shows a specific embodiment of the second metal layer of the fluid ejection device of Fig. 2.

Figure 4 is a block diagram of the relative positions of the various parts of a specific embodiment.

Figures 5A and 5B are block diagrams of the relative positions of the metal parts in another specific embodiment of the fluid ejection device.

Figure 6 shows a specific embodiment of the first metal layer of the fluid ejection device.

Fig. 7 shows a specific embodiment of the second metal layer of the fluid ejection device of Fig. 6.

Figure 8 shows a specific embodiment of the second metal layer layout of a fluid ejection device.

Figure 9 is a block diagram showing the relative positions of various parts of a specific embodiment.

Figure 10 shows a top view of a specific embodiment of the fluid ejection device.

Detailed description

In the following detailed description and in the several figures of the accompanying drawings, similar elements will be marked with similar reference numbers.

FIG. 1 shows a simplified cross-sectional view of the relative position of the metal layer in the specific example of the metal layer layout of the exemplary fluid ejection device. The film stack 10 includes a first metal layer 1 and a second metal layer 11. The first metal layer 1 includes at least an address path portion 6 and a non-address path portion. The non-address path portion of the first metal layer 1 includes at least one resistor portion 2, a first metal layer ground portion 4 and a logic portion 5. In a specific embodiment, the first metal layer 1 includes at least two of the resistor portion 2, the ground portion 4 and the logic portion 5 each arranged on opposite sides of the address path portion 6. The resistor portion 2 and the associated nozzle (Figure 10) define a strip height 26. The resistor part 2 includes a plurality of resistors (Figure 2). As known in the industry, the address path part 6 includes an address bus, an address line or conductor, a data path, a selection path, or an enable path, which are used to operate the resistors that make up the resistor part 2. The address path portion 6 carries the signal to the logic element, and the logic element causes a specific transmitting transistor to cause a specific corresponding transmitting resistor to transmit in response to the signal. Logic elements include components such as transistors, which provide functions such as address signal generation, transmission signal coupling, selection signal generation, and synchronization signal generation.

The film stack 10 of FIG. 1 also includes a second metal layer 11 above the first metal layer 1. The second metal layer 11 includes at least one conductive portion 7 and a second metal layer ground portion 8. The conductive part 7 includes a conductive path, a live wire, or a power bus to provide an electrical connection to the power source for the emission resistor 21. In a specific embodiment, the second metal layer includes at least two conductive portions 7 disposed on opposite sides of the ground portion 8. The conductive portion 7 is at least partially routed above the first metal layer ground portion 4 of the first metal layer. The second metal layer ground portion 8 is routed through the strip height, which is substantially parallel to the row 22 of resistors 21 and above the logic portion 5 and the address path portion 6 of the first metal layer 1. The outer edge of the second metal layer grounding portion 8 overlaps the inner edge of the first metal layer grounding portion 4. Conductive vias (Figures 2-4) provide electrical connections between the first metal layer ground portion 4 and the second metal layer ground portion 8 of the second metal layer 11.

By setting the layout or topology of the first metal layer 1 and the second metal layer 11, the conductive portion 7 will not be routed (that is, will not cover or overlap) the address path portion 6, and the conductive portion and The capacitive coupling between the address path parts reduces the probability of noise and poor performance.

The ground portion 8 of the second metal layer is routed through the area above the logic portion 5 of the first metal layer 1 and the address path portion 6 of the second metal layer 11, which may result in a larger ground area and lower ground resistance, resulting in Reduction of energy changes. Disposing the second metal layer grounding portion 8 on the second metal layer can avoid the increase in cost caused by the increase of the grain size. When the grounding resistance is achieved by widening the ground path width of the first metal layer, the grain size is correspondingly increased As a result, the cost associated with increasing the grain size increases. The second metal layer grounding portion 8 is routed through the height of the strip, which can also promote the improvement of energy variation, which can be achieved by increasing the thickness of the second metal layer 11.

Figure 2 shows a top view of an exemplary layout or topology of the first metal layer 1 of a specific embodiment of the fluid ejection device. The first metal layer is deposited on the substrate structure. The first metal layer 1 is masked and etched to define and manufacture the predetermined layout and topology of the first metal layer 1 of the circuit part of the fluid ejection device.

The first metal layer defines and includes a resistor part 2, a transistor part 3, a first metal layer ground part 4, a logic part 5 and an address path part 6. The resistor parts 2 each include a plurality of individual resistors 21. In a specific embodiment, the resistor part 2 also includes a heater foot 27 extending beyond the edge of the lower transistor to provide electrical connection to the individual resistor 21.

In a specific embodiment, the width of the resistor portion 2 is about 168 micrometers, the width of the resistor is about 75 micrometers, and the heater foot 27 drives the edge of the transistor from the bottom to extend toward the outside by about 93 micrometers. In a specific embodiment, the width of the transistor part 3 is about 156 μm, the width of the logic part 5 is about 126 μm, and the width of the address path part is about 206 μm. In the specific example shown in Figure 2, the ground portion 4 of the first metal layer is routed above the driving transistor. In a specific embodiment, the ground portion is about 96 microns wide. These dimensions are used in a specific embodiment; other specific embodiments may adopt other dimensions and dimensions.

In a specific embodiment, the part of the resistor 21 is formed by etching away at least part of the conductive layer from the resistor part of the first metal layer. The resistors 21 are arranged in rows 22, but may also be arranged in columns. Figure 2 shows 8 representative resistors 21 arranged in a row 22. A row of resistors can contain any number of resistors. In a specific embodiment, a row of resistors may include 100 resistors or 168 resistors, for example.

The transistor part 3 includes a driving transistor metal part 31 associated with an individual driving transistor corresponding to the resistor 2. The metal portion 31 of the driving transistor is shown in a representative exemplary shape. It should be understood that the shape details of the part 31 are determined by the special layout and design of the driving transistor. The conductive via 32 connects the driving transistor metal part 31 to the conductive part 7 attached to it (Figure 3). The metal part of the driving transistor 31 connects the resistor 21 to the power supply, and connects the source and drain parts of the driving transistor to the resistor 21, and connects to the ground part 4 through through holes, or through the lower layers (not shown in the figure) For example, it is connected to the phosphosilicate glass contact via a phosphosilicate glass layer, a polysilicon layer and/or a gate oxide layer.

The grounding part 4 includes a common ground connection or a common grounding path to the ground, between the driving transistor metal part 31 and the logic part 5. The ground via 41 electrically connects the first metal layer ground portion 4 to the second metal layer ground portion 8 covering the upper second metal layer.

The logic part 5 includes a logic element metal part 51 (FIG. 4) of an individual logic element 53. The logic element 53 is associated with a resistor 21 corresponding to the driving transistor 33 (FIG. 4). In a specific example, the address path portion 6 includes a plurality of address path portions 61, which carry a signal to the logic element 53, which signal determines which transmitting resistor 21 will be activated. For each resistor 21, the corresponding driving transistor 33 and the logic element 53 work together to receive the signal from the address path part and interpret the signal, and respond to the address signal at an appropriate time to switch power to the resistor To launch the resistor.

FIG. 3 shows a top view of the example topology of the second metal layer 11 corresponding to the embodiment of FIG. 2. FIG. The second metal layer 11 covers the first metal layer 1 (Figure 2), and is deposited and manufactured using thin film technology. The second metal layer 11 includes a conductive portion 7 and a second metal layer ground portion 8. The conductive portion 7 and the second metal layer ground portion 8 include the conductive layer portion of the second metal layer and are defined by the conductive layer portion, which is, for example, gold. The second metal layer 11 also includes a second conductive layer 112 under the first conductive layer 113, as shown in FIG. 4. In the specific embodiment of FIG. 3, the second metal layer ground portion 8 and the conductive portion 7 include a conductive layer portion and a second conductive layer portion that have substantially the same topology. In a specific embodiment, the second conductive layer portion may extend beyond the outer edge of the conductive layer portion, for example, about 4 microns beyond the edge of the conductive layer portion.

The conductive portion 7 is routed at least partially above the non-addressed path portion. In the specific example of FIG. 3, for example, the conductive portion 7 is routed over at least part of the driving transistor part 3, for example, at least part of the driving transistor metal part 31 and part of the grounding part 4 (FIG. 2). The second metal layer ground portion 8 is routed between the row 22 of transistors 21 of the first metal layer 1 and above the logic portion 5 and the address path portion 6 of the first metal layer 1 (Figure 2). In this embodiment, the conductive portion 7 does not cover any part of the address path portion 6 (Figure 2). In a specific example, the conductive portion 7 is about 196 microns wide, and the second metal layer ground portion 8 is about 475 microns wide.

Fig. 4 shows the specific embodiment shown in Figs. 1-3, a relative address map of the first metal layer portion and the second metal layer portion of the thin film stack 10 of a fluid ejection device. The first metal layer 1 includes an emission resistor part 2, a transistor part 3 (the transistor part 3 includes a driving transistor metal part 31 and a ground part 4 ), a logic part 5 and an address path part 6.

The first metal layer 1 includes a resistance layer portion 13 and a conductive layer portion 14. In a specific embodiment, the resistance layer portion includes TaAl, and the conductive layer portion includes AlCu. A passivation layer 12 separates the first metal layer 1 from the second metal layer 11. In a specific embodiment, the passivation layer 12 includes, for example, silicon carbide and/or silicon nitride.

The first metal layer 1 is deposited on the substrate structure 15. In a specific embodiment, the substrate structure 15 includes a silicon substrate, a gate oxide layer, a doped region, a phosphosilicate glass, and a polysilicon layer (not shown in the figure). The driving transistor 33 and the logic element 53 are defined in the base structure 15. The transistor part 3 covers at least part of the driving transistor 33, and the logic part 5 covers the logic element 53.

The second metal layer 11 includes a conductive portion 7 and a second metal layer ground portion 8. The ground portion 8 of the second metal layer covers the inner edges of the address path portion 6, the metal portion 5 of the logic element, and the ground portion 4. The ground portion 8 of the second metal layer is connected to the ground portion 4 through a conductive through hole 41. The conductive portion 7 does not cover the address path portion 6. The conductive part 7 is connected to the driving transistor metal part 3 through the conductive through hole 32.

The second metal portion includes at least a first conductive layer portion 113 and may further include a second conductive layer portion 112. The second conductive layer portion 112 has a resistivity higher than that of the first conductive layer portion 113. In a specific embodiment, the first conductive layer portion 113 includes gold and has a resistivity of about 0.08 ohm/square. In a specific embodiment, the first conductive layer portion 113 includes a gold layer with a thickness of about 0.36 μm. In other specific examples, the first conductive layer portion 113 includes a gold layer with a thickness ranging from about 0.3 μm to about 1.5 μm. The first conductive layer portion 113 contains AlCu.

In a specific embodiment, the second conductive layer portion 112 includes tantalum, and the second conductive layer portion 112 has a resistivity of about 60 ohms/square. The second conductive layer portion 112 includes a tantalum layer with a thickness of about 0.3 microns. In other specific examples, the tantalum layer may have a thickness in the range of about 0.0 micrometers to 0.5 micrometers. The second conductive layer portion contains, for example, tantalum. Before depositing the gold layer portion 113, depositing the tantalum layer portion 112 can improve the adhesion of the gold layer.

FIG. 5A shows a simplified illustration of the relative layout of the metal layer portion in another specific embodiment of the thin film stack 10 of the exemplary fluid ejection device. The film stack 10 includes a first metal layer 1 and a second metal layer 11. The first metal layer 1 includes at least one resistor part 2, a first metal layer ground part 4, a logic part 5 and an address path part 6. In a specific embodiment, the first metal layer including at least two of the resistor portion 2, the ground portion 4 and the logic portion 5 are each arranged on opposite sides of the address path portion 6. The resistor sections 2 each include a row 22 of individual resistors 21 (Figure 6).

The second metal layer 11 includes at least one conductive portion 9 and a second conductive portion 8'. The second conductive part 8 is electrically isolated from the conductive part 9. The second conductive part 8 is routed above the address path part 6 and the logic part 5. In a specific example, the second metal layer 11 includes at least two conductive portions 9 disposed on opposite sides of the second conductive portion 8'.

FIG. 5B shows a simplified illustration of the relative layout of the metal layer portion in a specific embodiment of the thin film stack 10 of an exemplary fluid ejection device. The second metal layer 11 includes conductive portions 7 and 9. In a specific embodiment, the configuration in Fig. 5A and the configuration in Fig. 5B correspond to the configuration of two different parts of the circuit of the fluid ejection device. For example, the layout of the second metal layer 11 in FIG. 5A corresponds to the layout of these parts of the second metal layer 11 in FIG. 8, and the conductive parts 7 and 9 are routed in parallel with each other. The layout of the second metal layer 11 in FIG. 5B can correspond to the layout of the parts of the second metal layer 11 in FIG. 8, where the conductive portion 9 is routed beyond the end of the conductive portion 7.

By configuring the layout or topology of the first metal layer 1 and the second metal layer 11, the conductive parts 7 and 9 are not routed over the address path part 6, and the second conductive part 8'and the conductive parts 7 and 9 Electrical isolation, the configuration of Figure 5A and Figure 5B can reduce the probability of noise generated by the capacitive coupling between the conductive portion and the address path portion. Providing the second metal layer 11 with the second conductive portion 8'containing tantalum can reduce the separation between the second metal layer 11 and the upper barrier layer.

Figure 6 illustrates a simplified top view of another embodiment of the first metal layer 1 of the fluid ejection device. The first metal layer includes an address path portion 6 and a non-address path portion. The non-address path part includes a resistor part 2, a transistor part 3, a first metal layer ground part 4 and a logic part 5. The resistor part 2 includes a plurality of individual resistors 21 arranged in a row 22. The transistor part 3 includes a driving transistor metal part 31 associated with an individual driving transistor corresponding to the resistor 21, and covers the lower driving transistor 33 (FIG. 9). The conductive through hole 32 electrically connects the driving transistor part 31 to the conductive parts 7 and 9 covering the upper part (FIG. 7).

The logic part 5 is located above the lower logic part 53, and the logic part 53 is defined by the base structure 15 (Figure 9). The position of the logic part does not contact the transistor part 3 as much as possible. The logic part can be separated from the transistor part 3 by a distance greater than 5 microns. In a specific embodiment, the width of the logic part 5 is about 65 μm, and the distance from the corresponding transistor part 3 is about 134 μm. In other specific embodiments, the logic part 5 is separated from the corresponding transistor part by more than 30 micrometers or more than 100 micrometers. In the specific embodiment shown in FIG. 6, the ground portion 4 of the first metal layer extends beyond the lower transistor 33 and partially includes the transistor portion 3. In a specific embodiment, the ground portion 4 of the first metal layer is about 281 microns wide. In a specific embodiment, the address path portion 6 is about 139 microns wide.

Figure 7 shows a simplified top view of another embodiment of the second metal layer corresponding to the embodiment of the first metal layer shown in Figure 6. The second metal layer includes conductive portions 7 and 9, which are defined and included by conductive layer portions 71 and 91 of the second metal layer 11. The second metal layer also includes second conductive portions 72, 92 and a second conductive portion 8', which are overlying the address path portion of the first metal layer and the logic portion 5 below. In a specific embodiment, the second conductive portions 72 and 92 are wider than the corresponding portions 71 and 91 laid on the top, and extend beyond the edges of the upper conductive layer portions 71 and 91, for example, by about 4 microns. The second conductive layer portion 23 covers the resistor portion 2 (FIG. 6) of the lower first metal layer. The second conductive layer portion 23 can protect the lower resistor 21 from being damaged due to cavitation.

The second conductive layer portions 23, 72, 92, and 8'are separated by a continuous gap 111 of the second metal layer. The gap 111 electrically separates the conductive parts 7 and 9 from their corresponding second conductive parts 71 and 91. The conductive portion 7 is electrically connected to the lower transistor portion 3 of the first metal layer through the conductive via 32 (FIG. 6). The conductive part 7 supplies power to the resistor corresponding to the lower driving transistor. The conductive part 9 is routed above the ground part 4 to further supply power to the driving transistors and resistors along the row (Figure 8).

Fig. 8 shows an exemplary layout of the second metal layer 11 in the specific example shown in Figs. 5A-7. In this specific example, the second metal layer 11 includes 6 conductive parts, that is, four conductive parts 7 and two conductive parts 9. The conductive parts are defined by the conductive layer parts 71 and 91 of the second metal layer 11. The second metal layer also includes corresponding second conductive layer portions 72, 92, which extend beyond the edges of the conductive portions 71, 91; and includes a second conductive layer portion 23 that covers the resistor portion 2 of the first metal layer (Figure 6), and includes a second conductive portion 8'which covers the address path portion 6. The second conductive layer portions 72 and 92 extend below the conductive portions 71 and 91 of the conductive portion 7. The second conductive layer portions 72, 92 and 8'are separated by a continuous gap 111 of the second metal layer. In a specific embodiment, the continuous gap 111 may be 8 μm to 20 μm.

The second conductive part 8 containing tantalum is provided on the second metal layer 11 to reduce the separation of the second metal layer 11 from the upper barrier layer. Providing the second metal layer 11 with second conductive layer portions 72, 92 that extend beyond the edges of the conductive portions 71, 91 can prevent the upper barrier layer from separating from the edge of the conductive portion of the second metal layer. The second metal layer 11 may be exposed. The delamination is more likely to occur when the gold is exposed to the edge of the conductive part.

The four conductive parts 7 are routed at least partially above the non-addressed path part. For example, in the specific example of Fig. 8, the conductive portion 7 is routed to the transistor portion of the first metal layer (not shown in the figure) and at least these associations of the first metal layer ground portion 4 correspond to the uppermost resistor group. And above the lowermost resistor group part. The conductive portion 9 is routed between the second conductive portion 71 and the corresponding conductive portion 7. The conductive portion 9 extends beyond the conductive portion 7 to provide power to drive the transistor group and the resistor group toward the center of the row.

Fig. 9 shows the relative positions of the first metal layer 1, the second metal layer 11, and the driving transistor 33 and the logic element 53 on the substrate structure 15 to show the exemplary layout of the specific embodiment in Figs. 5A-8. The first metal layer 1 includes a conductive layer portion 14 and a resistive layer portion 13. The first metal layer 1 includes a resistor part 2, a driving transistor part 3, a first metal layer ground part 4, a logic element part 5 and an address part 6. The first metal layer 1 is formed on the substrate and includes a gate oxide layer, phosphosilicate glass, polysilicon and doped regions.

The driving transistor 33 and the logic element 53 are defined on the substrate structure below the driving transistor 3 and the logic element part 5. The logic element 53 and the transistor 33 are not as close to each other as possible at intervals. The separation distance between the logic element 53 and the corresponding transistor 33 is greater than 5 microns. In a specific embodiment, the driving transistor 33 is about 216 μm wide, and is separated from the corresponding logic element 53 by 134 μm. Providing the separation between the transistor part and the logic part can provide extra space for the wider ground part 4, which can reduce the ground resistance, thereby reducing energy changes and improving the performance of the fluid ejection device.

The passivation layer 12 separates the first metal layer 1 and the second metal layer 11. The second metal layer includes a second conductive layer portion 112 and a first conductive layer portion 113. The second conductive layer portion 112 includes second conductive portions 72, 92, 8 , and 23. The second conductive portion 72 is routed above the driving transistor portion 3, the second conductive portion 92 is routed above the first metal layer ground portion 4, the second conductive portion 8'is routed above the address path portion 6, and the second conductive portion 23 The way is due to the resistor part 2 above.

The first conductive layer portion 113 includes conductive portions 71 and 91 which define and include conductive portions 7 and 9. The conductive parts 71 and 91 are routed above the second conductive parts 72 and 92 respectively. In a specific embodiment, there is no conductive portion routed above the address path portion 6.

Figure 10 shows an isometric view of a specific embodiment of the fluid ejection device 100. The fluid ejection device includes an orifice layer 101, a barrier layer 103 and a substrate structure 15. In a specific embodiment, the orifice layer 101 includes an orifice plate 101, and the orifice plate 101 may contain metal.

The orifice layer 101 includes at least one row of 24 nozzles 25. In the specific example in Figure 10, two rows of 24 nozzles 25 are shown. It must be understood that the orifice layer 101 includes multiple rows of 24 nozzles 25. Each nozzle 25 corresponds to a resistor 21 of the first metal layer 1 below. The nozzles 25 can be arranged in basic groups. Each group of nozzles 25 is powered by a common conductive part 7 or 9 (Figure 8). In the specific embodiment shown in Fig. 10, the nozzles 25 are arranged in 6 groups af. The basic groups a, b, c, and d correspond to the nozzle 25, and the nozzle 25 corresponds to the resistor 21, which is powered by the corresponding conductive portion 7 of the second metal layer 11 in FIG. Groups e and f correspond to the nozzles powered by the conductive part 9 shown in FIG. 8. Figure 10 shows the number of representative nozzles in each group. It must be understood that the number of nozzles can be changed. For example, in a specific embodiment, groups a, b, c, and d each include at least 28 nozzles, and groups e and f include at least 116 nozzles, from each row 24 each having 58 nozzles.

In a specific embodiment, the orifice plate 101 includes an opening 16 penetrating the orifice plate. In a specific embodiment, the opening 16 is located above the second conductive portion 8'in FIG. 8, and its outline is shown by a dashed line 8'. The opening 16 includes an expansion grid, which can cooperate to reduce the possibility of damage due to thermal expansion. Arranging the expansion grid 16 to be located above the second conductive portion 8'rather than above the gold can reduce the possibility of delamination between the barrier layer and the second metal. The second metal layer is provided, wherein the second conductive layer partially extends beyond the edge of the conductive layer, which can reduce problems caused by short circuits and/or layer separation.

It should be noted that words such as line, bus or path apply to any conductive path that is sufficiently conductive to provide a signal path for the propagation of a specific type of signal.

It should be understood that the foregoing specific examples are for illustrative purposes only to illustrate possible specific examples that may represent the principle of the present invention. Other configurations can be easily modified by those skilled in the art without departing from the essence and scope of the present invention.

<p>1The first metal layer</p><p>2Resistor part</p><p>3Transistor part</p><p>4The ground part of the first metal layer</p><p>5Logical part</p><p>6Address path part</p><p>7Conductive part</p><p>8The ground part of the first metal layer</p><p>8'Second conduction part, dashed outline</p><p>9Conductive part</p><p>10Film stacking</p><p>11Second metal layer</p><p>12Passivation layer</p><p>13Resistance layer part</p><p>14Conduction layer part</p><p>15Substrate structure</p><p>16Opening, expansion grille</p><p>21Resistor</p><p>22line</p><p>23Second conductive layer part</p><p>24line</p><p>25Nozzle</p><p>26Strip height</p><p>27Heater feet</p><p>31Drive the metal part of the transistor</p><p>32Conductive through hole</p><p>33Drive Transistor</p><p>41Conductive through hole</p><p>42Electrical connection</p><p>51Metal part of logic element</p><p>53Logic element</p><p>61Address path part</p><p>71, 91Part of the first conductive layer</p><p>72, 92Second conductive layer part</p><p>100Fluid injection device</p><p>101Orifice layer, orifice plate</p><p>102Barrier</p><p>111Gap</p><p>112Second conductive layer part</p><p>113Part of the first conductive layer</p>

Figure 1 shows a block diagram of the relative positions of metal parts in a specific embodiment of a fluid ejection device.

Figure 2 shows a specific embodiment of the first metal layer of the fluid ejection device.

Fig. 3 shows a specific embodiment of the second metal layer of the fluid ejection device of Fig. 2.

Figure 4 is a block diagram of the relative positions of the various parts of a specific embodiment.

Figures 5A and 5B are block diagrams of the relative positions of the metal parts in another specific embodiment of the fluid ejection device.

Figure 6 shows a specific embodiment of the first metal layer of the fluid ejection device.

Fig. 7 shows a specific embodiment of the second metal layer of the fluid ejection device of Fig. 6.

Figure 8 shows a specific embodiment of the second metal layer layout of a fluid ejection device.

Figure 9 is a block diagram showing the relative positions of various parts of a specific embodiment.

Figure 10 shows a top view of a specific embodiment of the fluid ejection device.