Untitled record

Full description and background of the invention

This disclosure relates to the field of power conversion.

Power transformers can be used in a number of applications to charge electronic devices, such as cell phones, audio systems, home theaters, or any other electronic devices, from

<p dir="rtl">5 Power source. It is well known in the art that ohmic loss amounts are inversely related to the increase in voltage and directly related to the increase in current. It is useful to increase the fullness factor of power transformer devices by increasing the voltage of the devices.</p>

Power converters previously mentioned in the field include series-connected single layer converters formed from semiconductor modules, such as GaAs. These power transformers may be

<p dir="rtl">10 Connected in series by wires or divided by fabricating the transformer on a semi-insulating substrate using insulating channels to provide electrical isolation between each divided transformer. The power source for these transducers is monochromatic light, such as a laser operating at a particular wavelength or energy. In this particular application, the monochromatic light is between 1 micron and 1.55 microns, in the infrared region of the spectrum. Closer than 1 micron is less useful</p>

<p dir="rtl">15 For home use because of the potential hazards of the light source to the human eye, the models shown here have light sources between 1.3 and 1.55 microns, and in certain models, around 1.3 microns. However, those with experience in the art may easily modify the invention disclosed herein to convert light of a particular range of wavelengths.</p>

General description of the inventor

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The invention includes a single multi-junction compact power transformer, with two or more back-to-back layers of the same material stacked superficial to each other with tunnel connections in the middle of each back-to-back layer. Because the telescoping layers are stacked on top of each other, each telescoping layer is thinned to collect a maximum amount of light and the energy is sequentially converted to increase the fill factor by increasing the voltage

<p dir="rtl">5 The entire device and reduce ohmic losses (which increase with increase in current). Taking into account the presence of stacked layers, light that is not absorbed in one layer is absorbed in the next layer immediately below the first layer, and so on. A power transformer can reach To a total efficiency of approximately 50%, there are lower amounts of current losses in these devices, taking into account the avoidance of a complex circuit using an arc arrangement of the relay layers, compared to the previous field, which requires</p>

<p dir="rtl">10 Interconnections between light-absorbing semiconductor segments.</p>

In the first, power transformers are provided, which include one or more GaInNAsSb links, a first semiconductor layer located above the one or more GaInNAsSb links, and a second semiconductor layer located below the one or more GaInNAsSb links, where a choice is made Thickness of one or more connections, GaInNAsSb

<p dir="rtl">15 The first semiconductor layer and the second semiconductor layer provide a resonant gap at a wavelength exposed to radiation.</p>

Brief explanation of the drawings

Figures shown here are for illustrative purposes only. The drawings are not intended to limit the scope of the present disclosure.

<p dir="rtl">20 Figure 1 shows an example of a single, multi-junction power converter, in which E1, E2, and E3 represent semiconductor materials with the same bandgap.</p>

Figures 2a and 2b show single-junction and triple-junction resonant power converters, respectively, with double distributed Bragg (DRB) deflectors, according to specific embodiments.

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Figures 3a and 3b show single-junction and triple-junction resonant power converters, respectively, with single Distributed Bragg (DRB) deflectors, according to specific embodiments.

Figures 4a and 4b show single-link and triple-link resonant power converters, respectively, with an upper Bragg distributed deflector and a rear mirror, according to specific embodiments.

5 Figures 5a and 5b show single-link and triple-link resonant power converters, respectively, with a back mirror, according to specific embodiments.

Figures 6a and 6b show single-junction and triple-junction resonant power converters, respectively, with two distributed Bragg deflectors and a top substrate, according to specific embodiments.

Figures 7a and 8b show single-junction and triple-junction resonant power transformers, respectively, with a substrate

10 It is located above a Bragg-type upper deflector and rear mirror, according to select models.

Figures 8a and 8b show single-junction and triple-junction resonant power converters, respectively, with two distributed Bragg deflectors and etched back contacts of side conductive layers (LCL), according to specific embodiments.

Figure 9 shows a bird's-eye view of a Pi chassis with multiple power transformers interconnected and in series, 15 according to specific embodiments.

Figures 10a and 10b show two triple-junction resonant power transformers with a double-pass setup and characterized by a single zone (Figure 10a) or a four-quadrant zone (Figure 10b), depending on specific embodiments.

Figures 11a and 11b show above-view photographs of two triple-junction resonant power transformers shown schematically in Figures 10a and 10b, respectively.

20 Figure 12 shows the effectiveness, power output and voltage at maximum power point (Mpp) as a function of laser input power for single, double and triple mesh GaInNAsSb power converters.

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Figure 13 shows the normalized current density (J) as a function of voltage for several levels of laser input power for single, double, and triple mesh GaInNAsSb power converters.

Reference is now made to the embodiments of the present disclosure. While certain embodiments of the present disclosure are described, it will be understood that embodiments of the present disclosure are not intended to be limited to the embodiments described in Disclosure 5. By contrast, references to embodiments of the present disclosure are intended to cover alternatives,

amendments, and equivalents thereof to be within the content and scope of the templates of the present disclosure as specified by the appended safeguards.

Detailed description:

In some embodiments provided by the present disclosure, two or more imitation layers 10 of the same semiconductor material grown on a substrate, such as GaAs, GaInNAsSb, GaInNAs,

InP, GaSb, Ge or other substrate known in the art, on top of each other with tunnel connections in the middle of each backing layer. Figure 1 shows a model of a single, multi-junction power transformer in which E1, E2, and E3 represent semiconductor materials with the same band gap. Each protective layer has the same bandgap, which roughly matches the power of the monochromatic light source to reduce minority carrier and thermal losses. In certain embodiments, the light source reaches the top layer furthest from the substrate. In some embodiments, the backing layer material may be a dilute nitride material, such as GaInNAs, GaInNAsSb, or another dilute nitride known in the art. In some embodiments, the monochromatic light source is between 1 micron to 1.55 microns, and in certain embodiments, the light source is approximately 1.3 microns. While some current may be lost through absorption of light by the tunnel link(s), light not collected in the first traditional layer is collected in the second traditional layer, and so on. The total effectiveness of that device can be at least 50% power efficiency, such as 50% to 60% or 50% to 70%. In certain embodiments, the power conversion efficiency of a single compass power transformer is at least 20%, such as 20% to 40%. In certain embodiments, the power conversion efficiency of a single compass power transformer is at least 30%, such as from 30% to 25% 50%. In certain embodiments, three-conductor devices provided by the present disclosure exhibit effectiveness

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Convert from 23% to 25% on an input power of about 0.6 watts to about 6 watts when irradiated with a rated radiation of 1.32 microns.

In certain embodiments, three or more representative layers of the same semiconductor material grown on a substrate such as GaInNAs, GaInNAsSb, GaAs, Ge, GaSb, InP 5 or another substrate known in the art, are stacked on each other's surface With tunnel connections in the middle of each reinforcement layer. Increasing the number of connections in a power transformer device can result in an increased fill factor, increased open circuit voltage (Voc) and reduced short circuit current (Jsc). Each protective layer has the same bandgap, which roughly matches the power of the monochromatic light source to minimize minority carrier and thermal losses. In certain embodiments, the light source reaches the lower layer closest to the substrate 10 first. The bandgap of the substrate is larger than the bandgap of the substrate. Taking into consideration that

The bandgap of the substrate is higher than the bandgap of the substrate, the light source passes through the substrate and the substrate absorbs the light. An example uses GaInNAs (0.95 eV bandgap) and a GaAs substrate (1.42 eV bandgap). The light source in this example will not be absorbed by the GaAs substrate and will be absorbed by the GaInNAs active region.

15 A heat sink can be coupled to the top layer surface, and can serve to cool the device and prevent defects caused by overheating. In some embodiments, the backing layer material may be a dilute nitride material, such as GaInNAs or GaInNAsS, or another dilute nitride known in the art. In some embodiments, the single-source light source has a wavelength from 1 micron to 1.55 microns, in certain embodiments, from 1 micron to 1.4 microns, and in certain embodiments

20 The light source is approximately 1.3 microns. While some current may be lost through light being absorbed by the tunnel link(s), light that is not collected in the first traditional layer can be collected in the second traditional layer, and so on. The total efficiency of this device may be at least 50% power efficiency.

In certain embodiments, the light-absorbing layer(s) includes GaInNAsSb. In some embodiments, the GaInNAsSb junction includes Ga1-xInxNyAs1-y-zSbz, wherein the values of x and y are 25 and z are 0 ≤ 0.24 ≥ .001≤ 0.20 ≥ z, and in certain embodiments, it is

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0.02≤ 0.24 ≥ x, 0.01≤ 0.07 ≥ y, 0.001≤ 0.03 ≥ z, and in certain embodiments 0.02≤x≤ 0.18, 0.01≤ 0.04 ≥ y, and 0.001≤ 0.03 ≥ z, in certain embodiments 0 .08≤ x ≤ 0.18, 0.025≤ 0.04 ≥ y, 0.001≤ 0.03 ≥ z, and, in certain embodiments, 0.06≤ 0.20 ≥ x, 0.02≤ 0.05 ≥ y, and 0.005≤ 0.02 ≥ z.

5 In some embodiments, the GaInNAsSb junction includes Ga1-xInxNyAs1-y-zSbz, wherein the values of x, y, and z are 0≤ 0.18 ≥ x, 0.001 ≤ 0.05 ≥ y, 0.001≤ 0.15 ≥ z, and in certain embodiments, 0≤ 0.18 ≥ x, 0.001 ≤ 0.05 ≥ y, 0.001≤ z ≤ 0.03, and in certain embodiments, 0.02≤ 0.18 ≥ x, 0.005 ≤ 0.04 ≥ y, and 0.001≤ 0.03 ≥ z. 0.04≤ 0.18 ≥ x, 0.01 ≤ 0.04 ≥ y, 0.001 ≤ 0.03 ≥ z, and in

<p dir="rtl">10 In certain embodiments, 0.06≤ 0.18 ≥ x, 0.015 ≤ 0.04 ≥ y, and 0.001≤ 0.03 ≥ z, and in some embodiments, 0.08≤ 0.18 ≥ x, 0.025 ≤ 0.04 ≥ y, and 0.001≤ ≥ 0.03 z.</p>

In certain embodiments, the GaInNAsSb junction has a band gap of 0.92 eV and includes -Ga1 xInxNyAs1-y-zSbz, with x, y and x :z values of 0.175, 0.04 y, and 0.012 ≤ y ≤ 0.019.

<p dir="rtl">15 In certain embodiments, the GaInNAsSb junction has a bandgap of 0.90 eV and includes Ga1-xInxNyAs1-y-zSbz, the values of x, y, and z: 0.18 x, 0.045 y, and 0.012</p>

0.019 ≥ y ≥

In certain embodiments, the GaInNAsSb junction includes Ga1-xInxNyAs1-y-zSbz, wherein the values of x and y are z: 0.19 ≥ x ≥ 0.13, 0.03 ≤ 0.048 ≥ y, and 0.007 ≤ 0.02 ≥ z.

<p dir="rtl">20 In certain embodiments, the GaInNAsSb link includes Ga1-xInxNyAs1-y-zSbz, wherein x, y, and z values are chosen to have a bandgap that matches or closely matches the radiation energy used to deliver power to the device. In certain embodiments, the GaInNAsSb bond is essentially lattice-symmetric with the GaAs substrate. It should be noted that the general understanding of “essentially lattice symmetry” is that the in-plane lattice constants of materials in their fully relaxed states vary</p>

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Less than 0.6% when materials are present at thicknesses greater than 100 nanometers. Also, the subcells of lattices that are essentially symmetrical to each other used here means that all materials in the subcells at thicknesses greater than 100 nm have lattice constants in the plane at their fully relaxed states that vary by less than 0.6%.

<p dir="rtl">5 In certain embodiments, each of the relay layers in the power transformer is symmetrical from networks to a substrate</p>

.GaAs

In some embodiments, the use of layering materials of different refractive indices can produce distributed deflectors of the Bragg type (DBR) within the housing and are used to increase the efficiency of the power transformer. This example uses a dilute nitride material, which in certain embodiments is a

<p dir="rtl">10 GaInNAsSb, acts as the absorbent material in the backbone beam of the structure. The gap can be grown using a material such as AlGaAs/GaAs in the form of distributed diffraction devices (DBR) type (DBR) under the dilute nitride layer and above the substrate, and other distributed diffraction devices (DBR) type (DBR) type that grow over the dilute nitride layer, can be made of semiconductors or A number of oxides.</p>

In certain embodiments, where the substrate has a higher bandgap than the absorber, a metal may be used

<p dir="rtl">15 Back side as a structured mirror, to allow non-absorbed light reflected by the backing metal to be absorbed back into the traditional layers above. Examples of resonant gap power transformers that use a double-pass setup are shown in Figures 2a and 2b. Figure 2a shows a single-junction resonant gap with a distributed DBR (Bragg) diffraction device at the top and a distributed diffraction (DBR) type at the bottom. A single GaInNAsSb junction is arranged between the two distributed diffraction devices (DBR).</p>

<p dir="rtl">20 DBRs (DBRs) are separated from DBRs (DBRs) by semiconductor layers D1 and D2. The semiconductor layers may be formed from a material that does not significantly absorb incident radiation, which may be symmetrical from gratings with GaAs and the absorbing layer, and in embodiments A given GaAs thickness of D1, D2, and GaInNAsSb junction can be chosen to provide a stable wave at the incident radiation wavelength. A similar setup is shown in Figure 2b</p>

<p dir="rtl">25 Shown in Figure 2a but including multiple GaInNAsSb connections and each of the connections</p>

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Separated by a tunnel connection. The thickness of the GaInNAsSb junction can be between 100 nm to 1 micron. In certain embodiments, the substrate is a semi-insulating or chemically doped n-type GaAs substrate with a back metal representing the lower layer of the structure.

For use with 1 micron to 1.55 micron radiation, the mirror layer can be

5 For example gold or gold/nickel alloys.

In certain embodiments, the power transformer structure uses one Bragg-type distributed deflector means instead of two. Resonant power converters using a single Bragg-type distributed deflector are shown in Figures 3a and 3b. Figure 3a shows a single ordered GaInNAsSb junction between the semiconductor layers D1 and D2. These layers lie above a lower Bragg-type distributed deflector, which...

10 Located above the substrate. The top surface of the device, such as the top surface of layer D1 facing the incident radiation, may be coated with anti-reflection coating. Anti-reflection coating can optimize the wavelength of incident radiation to reduce scattering. Figure 3b also shows a resonant gap setup for a single Bragg distributed diffractive medium with multiple GaInNAsSb junctions.

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In certain embodiments, the power converter body includes one Bragg-type distributed deflector and a rear mirror under the pedestal. These device-specific settings are shown in Figures 4a, 4b, 5a, and 5b. Figures 4a and 4b show resonant gap power transformers for an upper Bragg distributed diffractive medium including a single GaInNAsSb junction between semiconductor layers D1 and D2, and a back mirror below the semiconductor layer D2. In certain models, the rear mirror can also function as an electrical contact. A multi-junction power converter is shown in Figure 4b, where multiple GaInNAsSb connections are arranged between an upper Bragg distributed deflector and a rear mirror.

Both a distributed Bragg deflector and a rear mirror at the bottom of the device are used in the power transformers shown in Figures 5a and 5b. In this setup, the thickness of the Bragg diffuser can be reduced compared to a setup with a lower Bragg diffuser without the rear mirror. As in other devices, the top surface of layer D1 may include packaging

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Anti-reflective. In certain models, the substrate is removed and metal is used in its place as a rear mirror. In these structures, light passes through the upper Bragg diffractor, then through the backing layers, then through the lower Bragg diffraction and finally strikes the rear mirror. In such embodiments, the GaInNAsSb metabolite layer includes as an absorbent layer one or more of 5 absorbent layers.

10

In certain embodiments, the top layer of the structure includes a semiconducting air-air interface over the backing layers, which may consist of one or more GaInNAsSb layers. Below the traditional layer is a lower Bragg-type distributed deflector, which is located above the rear mirror. In these models, light strikes the top layer of the air-semiconductor interface and travels to the backing layer, then to the distributed Bragg diffracting medium and finally is reflected back by

The structure after its reflection in the rearview mirror.

A resonant gap setup with two distributed Bragg diffractions and an upper substrate layer is shown in Figures 6a and 6b. The upper substrate layer is largely transparent to the incident radiation used to generate power. In certain embodiments, the GaAs substrate can be such as n-type GaAs and can have a thickness of from about 150 microns to about 250 microns, such as from 175 microns to

225 Micron. The thickness of the substrate can be thinned, for example, by milling or etching to reduce absorption, and in these models can be 50 microns or less. In certain embodiments, the lower Bragg distributor deflector may be connected to a heat sink. Connecting the Bragg distributed deflector directly to the heat sink can reduce the temperature of the power transformer.

20 The device configuration shown in Figures 7a and 7b is similar to that shown in Figures 6a and 6b but with a lower Bragg-type distributed deflector replaced by a rear mirror.

In certain embodiments, the structure has contact points within the gap to avoid resistance from Bragg-type distributed deflector structures. The gap contact is made by lateral conduction and transfer layers (LCL) bypassing Bragg-type distributed deflector structures. Adapters are shown

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The power has contact points inside the gap in Figures 8a and 8b. In the structures of these devices, the secondary layers are etched to either the LCL layer located above the lower Bragg distributed deflector or to the LCL layer located above the semiconductor layer D1. The evolution of the LCLs from the carrier movement to the electrical contacts (point

<p dir="rtl">5 The back and top points) can be formed from, for example, chemically doped GaAs such as n-type GaAs. LCLs and similar etched back electrical contacts may be used with device structures provided by the present disclosure.</p>

In certain embodiments, the structure can grow inversely. In these cases, the substrate can be thinned to a specific thickness or removed after growth using a combination of lifting techniques. Light passes through the substrate

<p dir="rtl">10 First, before passing through the traditional layers. In these structures, the band gap of the substrate is higher than the band gap</p>

The range of traditional classes.

Multiple photovoltaic inverters consisting of a number of subcells connected in series can be constructed to increase the output voltage. Subcells can be connected in parallel to increase the output current. An example of a Pi structure is shown in Figure 9. Infrared absorbing materials are typically characterized by a voltage

<p dir="rtl">15 However, in a particular application, it is preferable to increase the power transformer voltage. This can be done by connecting multiple power transformers in series. A setup is also referred to, a top-down view of which is shown in Fig. 9, as a Pi chassis in which multiple cells of a power transformer are arranged in rings centered around a central axis, where each cell is separated by an insulator and the multiple cells or subgroups of cells are connected multiple sequentially. These structures can be manufactured</p>

<p dir="rtl">20 Using single connections and providing high cell density. Higher voltages provide improved DC-DC converter efficiencies and lower ohmic losses. Although the latter currents can produce ohmic losses, this can be offset because the increased number of sub-cells results in lower currents.</p>

Other device structures are shown in Figures 10a and 10b. Figure 10a shows a single power transformer

<p dir="rtl">25 For double connection with a triple connection. Figure 10b shows a power transformer with four quadrants (full circuit).</p>

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For double connection with a triple connection. The dimensions of the devices are 300 microns by 300 microns. The four converters can communicate in series to increase the voltage and/or decrease the current. Serial interconnection can also reduce the effect of spatial orientation of incident radiation. What's more, for large area power transformers, the assembly area can be divided into quadrants or sub-areas

<p dir="rtl">5 Another way to reduce the amount of ohmic losses by bringing the electrical contact points closer to the power generation surfaces. Photographs of the single and four-quadrant devices are shown in Figures 11a and 11b.</p>

The power transformers shown in Figures 10a, 10b, 11a, and 11b were fabricated using GaInNAsSb interconnects. All of the symmetrical layers were meshed with a GaAs substrate. As it was done

<p dir="rtl">10 Organizing a back mirror at the bottom of the GaAs substrate. The resonant gap of the three-junction structures was equipped to support a continuous wave at about 1.3 microns, such as 1.32 microns or 1.342 microns. The band gap for GaInNAsSb junctions was about 0.92 eV for power conversion devices at 1.32 microns. Some of these devices provided a fill factor of about 65% to about 75%, an open circuit voltage Voc of 1.47 V to about 1.5 V and a circuit current</p>

<p dir="rtl">15 Short Jsc from 0.6 amps to 1.4 amps. The power conversion efficiency was from 23% to 25% at an input power of 0.6 watts to 6 watts.</p>

In certain embodiments, the two or more layers of the same semiconductor material have different thicknesses. In particular, the thickness of the coatings farther away from the light source can decrease. In certain embodiments, the thicknesses of each layer are similar. In certain models, it is

<p dir="rtl">20 The thicknesses of the traditional layers are different, either increasing or decreasing depending on the location of the light source.</p>

In certain embodiments, there is a permeable layer on the surface of the top layer.

In specific models, the thickness, or height, of the entire device may be between 1 micron up to 10 microns.

The power transformer area can be, for example between 100 microns x 100 microns, up to

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1cm x 1cm, or more. For example, the total area is 10-4 cm2 to 1 cm2. The thickness of each protective layer may be from a few hundred nanometers to a few microns.

Figure 12 shows the effectiveness, power output, and voltage at maximum power point (Mpp) as a function of laser input power for single (open circle) and dual (square) GaInNAsSb compass power converters.

5 And a third (additional).

Figure 13 shows the normalized current density (J) as a function of voltage for multiple levels of laser input power for single (open circuit), double (square) and triple (additive) GaInNAsSb power converters.

Finally, it should be noted that there are alternative ways to apply the models described here. Accordingly, it will be considered

<p dir="rtl">10 The current models are illustrative rather than restrictive. What's more, the protections are not specific to the details presented here, and are subject to their full scope and equations.</p>

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