Magnetic random access memory cell with improved dispersion of the switching field

1. A cell of the magnetic random access memory (MRAM), comprising: a magnetic tunnel junction, comprising: a first ferromagnetic layer, a second ferromagnetic layer having a second magnetization that can be oriented relative to the axis of the anisotropy of the second ferromagnetic layer at a predetermined high temperature threshold, and a tunnel barrier between the first and the second ferromagnetic layer; first current transmission line extending along the first direction and which is in communication with the magnetic tunnel junction; wherein a first DC transmission line is configured to provide a magnetic field for orienting the magnetization in the second field of the current transfer; wherein the MRAM cell is configured relative to the first power transmission line, so that when the magnetic field providing at least one component of the magnetic field is substantially perpendicular to said axis of anisotropy; a second ferromagnetic layer has an asymmetric shape along at least one of its size, so that the second magnetization pattern comprising C-shaped state, and wherein said C-shaped pattern capable state change drawing S-shaped state by means of the second component of the field, and the magnetization of the second switch is capable component through the first field when the magnetic field is provided. 2. MRAM cell of claim 1, wherein the anisotropy axis oriented at a predetermined angle to the direction of current transmission lines. 3. MRAM cell of claim 2, wherein the predetermined angle is in a range contained greater than 0 ° and less than 90 °. 4. The MRAM cell of claim 2, wherein the predetermined angle is in a range contained between 0 ° and 45 °, and preferably substantially 45 °. 5. MRAM cell of claim 1, wherein the second ferromagnetic layer has an anisotropic shape and in which the anisotropy axis is defined anisotropic second ferromagnetic layer form. 6. The MRAM cell of claim 1, wherein the second layer comprises a ferromagnetic magnetocrystalline anisotropy, and in which the anisotropy axis is defined magnetocrystalline anisotropy. 7. The MRAM cell of claim 1, wherein said resolution includes the anisotropy axis. MRAM device 8, comprising a plurality of MRAM cells of claim 1 wherein the MRAM cells arranged in rows and columns; a plurality of first power transmission lines extending along a first direction and connecting MRAM cells along a row; and a plurality of second power transmission lines connecting MRAM cells along the column. 9. A method for recording MRAM cell of claim 1, comprising the steps of: heated magnetic tunnel junction; as soon as a magnetic tunnel junction has reached a predetermined high-temperature threshold, the second switch the magnetization of the second ferromagnetic layer; and cooled magnetic tunnel junction at a predetermined low temperature threshold for the freezing of the second magnetization in a recorded state; and said second magnetization switching field of the current transmission comprises a first transmission line current for applying a magnetic field, comprising at least one component substantially perpendicular to said axis of anisotropy, and wherein said switch further comprises a second magnetization change pattern C-shaped state of the second magnetization pattern in S-shaped state by a second field component. 10. The method of claim 9, wherein the additional magnetic field component includes a first field which is oriented substantially parallel to the anisotropy axis, the second magnetization switching. 11. The method of claim 9, wherein said field current is performed prior to transmission of said refrigeration magnetic tunnel junction. 12. The method of claim 9, further comprising the step of disable field current, and wherein said cooling of the magnetic tunnel junction at a predetermined low temperature threshold to operate off the field current.