PL3564937T3

Threshold voltage sensing method for oled driving thin film transistor

Abstract

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Term

10.4 yearsto projected expiry

Projected expiry 15 February 2037, counted from filing; an application has no term until it is granted.

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13 members in 7 offices

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201611251545ChinaA
2017073600ChinaW

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DocumentOfficeKind
CN106782320AChinaA
WO2018120367A1World Intellectual Property Organization (WIPO)A1
US2018240403A1United States of AmericaA1
US10089933B2United States of AmericaB2
CN106782320BChinaB
KR20190095954ARepublic of KoreaA
EP3564937A1European Patent Office (EPO)A1
JP2020503553AJapanA
EP3564937A4European Patent Office (EPO)A4
JP6813748B2JapanB2
KR102243726B1Republic of KoreaB1
EP3564937B1European Patent Office (EPO)B1
PL3564937T3This recordPolandT3