Semiconductor light emitting device
Abstract
This record has no abstract on file.
Term
No projected expiry on record.
- Priority
- Filed
- Published
- Today
7 claims: 7 independent, 0 dependent
- 1p-TYPE ZnSe LAYER p-TYPE ZnMgSSe CLADDING LAYER (SECOND CLADDING LAYER) BARRIER LAYER (FIRST CLADDING LAYER) ACTIVE LAYER n-TYPE ZnMgSSe CLADDING LAYER n-TYPE ZnSe BUFFER LAYER n-TYPE COMPOUND SEMICONDUCTOR SUBSTRATE 1:n-type sammensatt halvledersubstrat
- 22:n-type ZnSe-bufferlag
- 33:n-type ZnMgSSe-kledningslag
- 44:aktivt lag
- 55:p-type ZnMgSSe-kledningslag (andre kledningslag)
- 66:p-type ZnSe-lag
- 77:p-type ZnSe/ZnTe supergitterkontaktlag 11: barrierelag (første kledningslag)
Independent claims7
10 paragraphs in 1 section, as filed
(71) Seeking (72) Inventor (74) Proxy
Sumitomo Electric Industries Ltd, 5-33, Kitahama 4-chome, Chuo-ku,
541-0041 OSAKA-SHI, OSAKA, JP
Shinsuke Fujiwara, c / o Osaka Works or Sumitomo Electric Industries Ltd.1-3, Shimaya, 1-chome, Konohama-ku, 541-0041 OSAKA-SHI, OSAKA, JP
Takao Nakamura, Osaka Works of Sumitomo Electric Industries Ltd. 1-3, Shimaya, 1-chome, Konohama-ku, 541-0041 OSAKA-SHI, OSAKA, JP
Hiroki Mori, o / o Osaka Works of Sumitomo Electric Industries Ltd.1-3, Shimaya, 1-chome, Konohama-ku, 541-0041 OSAKA-SHI, OSAKA, JP
Koji Katayama, c / o Osaka Works or Sumitomo Electric Industries Ltd.1-3, Shimaya, 1-chome,
Konohama-ku, 541-0041 OSAKA-SHI, OSAKA, JP
Tandbergs Patentkontor AS, PO Box 7085 Majorstua, 0306 OSLO, NO (54) Designation Light-emitting semiconductor element (57) Summary
A ZnSe-based light emitting device makes it possible to achieve longer life. The light emitting device is formed on a composite semiconductor comprising an active layer (4) interposed between an n-type ZnMgSSe cladding layer (3) and a p-type ZnMgSSe cladding layer (5) and having a barrier layer (11) with a band gap which is larger than in the p-type ZnMgSSe cladding layer, provided between the active layer (4) and the p-type ZnMgSSlining layer (5).
ry // 77 p-TYPE ZnSe / ZnTe SUPERLATTICE CONTACT _ LAYER
14 members in 7 offices
Priority claims16
| Document | Office | Kind | Date |
|---|---|---|---|
| 2003328088 | Japan | A | |
| 2003328088 | Japan | A | |
| 2003390261 | Japan | A | |
| 2003390261 | Japan | A | |
| 2003401557 | Japan | A | |
| 2003401557 | Japan | A | |
| 2003401560 | Japan | A | |
| 2003401560 | Japan | A | |
| 2003328088 | – | – | – |
| 2003390261 | – | – | – |
| 2003401557 | – | – | – |
| 2003401560 | – | – | – |
| JP20030328088 | – | – | – |
| JP20030390261 | – | – | – |
| JP20030401557 | – | – | – |
| JP20030401560 | – | – | – |
Members14
| Document | Office | Kind | |
|---|---|---|---|
| NO20041523LThis record | Norway | L | |
| CN1599086A | China | A | |
| EP1517379A2 | European Patent Office (EPO) | A2 | |
| KR20050029103A | Republic of Korea | A | |
| US2005062054A1 | United States of America | A1 | |
| TW200512955A | Taiwan Province of China | A | |
| JP2005093895A | Japan | A | |
| TWI232599B | Taiwan Province of China | B | |
| JP2005150656A | Japan | A | |
| JP2005166802A | Japan | A | |
| JP2005166803A | Japan | A | |
| JP3900128B2 | Japan | B2 | |
| CN100342557C | China | C | |
| EP1517379A3 | European Patent Office (EPO) | A3 |
1 legal event, as the office reported them to INPADOC
Events
| Event | Code | |
|---|---|---|
| Withdrawal, rejection or dismissal of laid open patent applicationFC2A | FC2A |
Numbers
- Publication, DOCDB
- 20041523
- Publication, EPODOC
- NO20041523L
- Application
- 1523
- Application, DOCDB
- 20041523
- Application, EPODOC
- NO20040001523
Titles2
- Norwegian
- Lysemitterende halvlederelement
- English
- Light-emitting semiconductor element
Classification
- CPC, 7
- H10H20/823
- B60Q1/326
- H01S5/327
- H10H20/812
- B60Q1/24
- B60Q2900/30
- B60Y2200/11
- IPC, 2
- H01L33 06
- H01L33 28