Nova Patents
NO20034441L

Semiconductor device and method of manufacturing the same

Abstract

A plurality of semiconductor chips (23) are attached to an adhesive layer (22) formed on a bottom plate (21). Then, first to third insulating films (31, 35, 39), first and second underlying metal layers (33, 37), first and second wiring (34, 38) and a solder ball (41) are formed together for the number of semiconductor chips (23). In this case, the first and second underlying metal layers (33, 37) are formed by a vacuum evaporation method, and the first and second recaps (34, 38) are formed by an electroplating method. Then, a laminate structure consisting of the three insulating films (39, 35, 31), the adhesive layer (22) and the bottom plate (21) is cut in an area located between the adjacent semiconductor chips (23).

Term

No projected expiry on record.

  1. Priority
  2. Filed
  3. Published
  4. Today

2 claims: 2 independent, 0 dependent

  1. 1
    41 41 I 3B 3761 34 ) 34 61 37 40 ) 38
  2. 2
    22 33 27 25 32 24 26 32 27 25 23
Independent claims2