Ion mobility spectrometry (ims) device with charged material transportation chamber.

(54) Title: ION MOBILITY SPECTROMETRY DEVICE (IMS) WITH CHARGED MATERIAL TRANSPORTATION CHAMBER.

(54) Title: ION MOBILITY SPECTROMETRY (IMS) DEVICE WITH CHARGED MATERIAL TRANSPORTATION CHAMBER.

(57) Summary

An end detection assembly is described that includes a deflection chamber, an inlet assembly, and a collector assembly. The deflection chamber is formed of substantially non-conductive material or semiconductor material. A stamped resistive trace is deposited on one or more of an inner surface or an outer surface of the deflection chamber. The stamped resistive trace is configured to connect to an electrical power source. The inlet assembly and the collector assembly are in fluid communication with the diversion chamber. The inlet assembly includes an inlet to receive a sample, a reaction region to ionize the sample, and a gate to control the inlet of the ionized sample to the diversion chamber. The collection assembly includes a collection plate to collect the ionized sample after the ionized sample passes through the deflection chamber.

(57) Abstract

An ¡on detection assembly ¡s described that ¡ncludes a drift chamber, an ¡nlet assembly, and a collector assembly. The drill chamber is formed of substantially non-conductive material and / or semi-conductive material. A patterned resistive trace ¡s deposited on one or more of an interior surface or an exterior surface of the drift chamber. The patterned resistive trace is configured to connect to a source of electrical energy. The ¡nlet assembly and the collector assembly are ¡n fluid communication with the drift chamber. The ¡nlet assembly ¡ncludes an ¡nlet for receiving a sample, a reaction region for ¡onizing the sample, and a gate for controlling entrance of the ¡onized sample to the drift chamber. The collector assembly inludes a collector píate for collecting the onized sample after the onized sample passes through the drift chamber.

PATENT TITLE No. 361966

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IMPI

Headlines):

SMITHS DETECTION MONTREAL INC,

Home:

7030 Century Avenue, L5N 2V8, Mississauga, Ontario, CANADA

Denomination:

ION MOBILITY SPECTROMETRY DEVICE (IMS) WITH A TRANSPORTATION CHAMBER. LOADED MATERIAL.

Classification;

CIP:

CPC

G01N27 / 62; H01J49 / 02; H01J49 / 04

G01N27 / 622; H01C3 / 06; H01J49 / 06; H01J49 / 0018; H01J49 / 062; H05K1 / 1118

Inventors);

BORDAN ATAMANCHUK; VOLODIMIR BONDARENKO; VLAD SERGEYEV; HENRYK ZALESKI; DANIEL LEVIN; MARK PINIARSKI; IGOR KUBELIK; QUNZHOU ΒΙΑΝ; SIMON FELDBERG; DOUGLAS JASON GREEN; BRIAN BOSO; ATIN J. PATEL

REQUEST

Number:

MX / a / 2015/013289

International Presentation Date:

March 2014

<td></td><td colspan="2">PRIORITY</td>

<td>Country:</td><td>Date:</td><td>Number:</td>

<td>US</td><td>March 18, 2013</td><td> 61/802,928</td>

<td>US</td><td>July 31, 2013</td><td> 61/860,773</td>

Validity: Twenty years

Expiration Date: March 18, 2034

Issue Date: December 19, 2018

The reference patent is granted based on articles 1 *, 2^to traction V, 6 * fraction lili, and 59 of the Industrial Property Law.

In accordance with article 23 of the Industrial Property Law, this patent has a non-extendable term of twenty years, counted from the filing date of the international application and will be subject to the payment of the fee to maintain the rights in force. .

Whoever subscribes to this title 1 does so based on the provisions of articles 6 * sections III and 7 “bis 2 of the Industrial Property Law (Official Gazette; of the Federation (DOF) 06/27/1991, amended on 02 / 08/1994, 10/25/1996, 12/26/1997, 05/17/1999, 01/26/2004, 06/16/2005, 01/25/2006, 05/06/2: 009, 06 / 01 / 20110,18 / 06/2010, 06/28/2010, 01/27/2012, 04/09/2012, 06/01/2016 and 03/13/2018); articles 1 », 3» fraction V subsection a), 4 »and 12- fractions I and III of the Regulation of the Mexican Institute of Industrial Property (DOF 12/14/1999, amended on 07/01/2002, 07/15/19 2004, 07/28/2004 and 09/07/2007); articles 1 ·, 3^S, 4^S, 5^S fraction V subsection a), 16 sections I and III and 30 of the Organic Statute of the Mexican Institute of Industrial Property (DOF 12/27/1999, amended on 10/10/2002, 07/29/2004, 08/04/2004 and 09/13/2007); 1 «, 3» and 5 «subsection a) of the Agreement that delegates powers to the Deputy Directors General, Coordinator, Directors. Divisionals, Regional Office Holders, Divisional Deputy Directors, Departmental Coordinators and other subordinates of the Mexican Institute of Industrial Property. (DOF 12/15/1999. Amended on 02/04/2000. 07/29/2004, 08/04/2004 and 09/09/2007).

The present document is signed with an advanced electronic signature (FIEL), based on the articles. 7 BIS 2 of the Industrial Property Law; 3rd of its Regulations, and 11 section III, 2 section V, 26 BIS and 26 TER of the Agreement establishing the guidelines for the use of the Portal; of Payments and Electronic Services (PASE) of the Mexican Institute of Industrial Property, in the procedures indicated.

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H Original Chain:

NAHANNY MARISOL CANAL REYES; 0000100C000403252793; Administration Service

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Creativity

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MX / 2019/17002

Xvmbs MOBILITY SPECTROMETRY DEVICE (xmsj luh LOADED MATERIAL TRANSPORTATION CHAMBER

Background of the Invention

Ion mobility spectrometry refers to an analytical technique that can be used to separate and identify materials from ionized material, such as molecules and atoms. The ionized material can be identified in the gas phase based on mobility in a carrier buffer gas exposed to an electric field. In this way, an ion mobility spectrometer (IMS) can identify material from a sample of interest by ionizing the material and measuring the time it takes for the resulting ions to reach a detector. For example, an IMS detector uses an ion transport chamber where ionized materials are driven by an electric field from the chamber inlet to the chamber outlet. An ion flight time is associated with the mobility of the ion, which is related to the mass and geometry of the material that was ionized. The output of an IMS detector can be visually represented as a peak height spectrum versus the deviation time. In some examples, IMS detection is performed at elevated temperature (eg, above one hundred degrees Celsius (+ 100 ° C). In other examples, IMS detection can also be performed without heating. IMS detection can be used for military and security applications, for example, to detect drugs, explosives, etc. Multi-section loaded material transport chambers often have limitations, including high cost, complete assembly, heavy and frequent maintenance, and reliability problems. Other existing one-piece glass or ceramic tube-based chambers with either a continuous conductive body or internal continuous conductive coating have uniform and / or non-unstable resistance that can compromise detection quality.

Brief Description of the Invention

The summary is provided to present a selection of concepts in a simplified form which is described further below in the Detailed Description. This Summary is not intended to identify the key characteristics or essential features of the claimed subject matter, nor is it intended to be used as an aid in determining the focus of the claimed subject matter.

Brief Description of the Figures

The detailed description is described with reference to the accompanying figures. The use of the reference number in different examples in the description and figures may indicate similar or identical elements.

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FIG 1 is a diagrammatic illustration of a 1MS system including a deflection chamber with a stamped resistive trace deposited on the interior surface of the deflection chamber in accordance with an exemplary implementation of the present disclosure.

FIG. 2 is an isometric cross-sectional view illustrating a deflection chamber with a stamped resistive trace deposited on an interior surface of the deflection chamber in accordance with an exemplary implementation of the present disclosure.

FIG. 3 is a partial cross-sectional isometric view illustrating a deflection chamber with a helical resistive trace deposited on an interior surface of the deflection chamber according to the exemplary implementation of the present disclosure, where portions of the deflection chamber are illusory to illustrate the helical drawing of the resistive trace.

FIG. 4 is a diagrammatic illustration of a drawing for a resistive trace stamped on an interior surface of a loaded material transport chamber, such as the deflection chamber illustrated in FIG. 2, where the resistive trace includes multiple curves of more than two hundred and seventy (270 ° C) oriented at least substantially perpendicular to the longitudinal axis of the loaded material transport chamber, and where the adjacent curves of the resistive trace are connected one to the another in series uses bridges deposited on an interior surface of the loaded material transport chamber according to an example implementation of the present description.

FIG. 5 is a diagrammatic illustration of a drawing for resistive tracing stamped on an interior surface of a loaded material transport chamber, such as the deflection chamber illustrated in FIG. 2 where the resistive trace includes multiple curves of less than two hundred and seventy degrees (270 °) oriented at least substantially perpendicular to the longitudinal axis of the loaded material transport chamber, and where the adjacent curves of the resistive trace are connected to each other in series using bridges deposited on the inner surface of the loaded material transport chamber according to an implementation example of the present description.

FIG. 6 is a partial cross-sectional isometric view illustrating a loaded material transport chamber with a stamped resistive trace on an exterior surface of the charged material transport chamber and / or a stamped resistive trace deposited on an interior surface of the charge chamber. transport of loaded material according to an example implementation of the present description.

FIG. 7 is a flow chart illustrating a method of manufacturing a loaded material transport chamber with a resistive line stamped on an inner surface and / or outer surface of a loaded material transport chamber according to an implementation example illustrating a an inner line where that of the present description.

is an isometric sectional view of the transport chamber of helical resistive material deposited in a transversal loaded with surface of the loaded material transport chamber, substrate is advanced longitudinally in a first speed according to an example of implementation of the present removal for resistive.

The

FIG. 9 partial loaded in the description, and where a part of the substrate is to illustrate the helical drawing of the trace is an isometric sectional view illustrating a camera with a resistive trace inner surface of loaded material, where the transverse of transport of helical material the substrate chamber being deposited from transport is advanced longitudinally in a second example of a speed helical part in accordance with an implementation of the present disclosure, and where of the

FIG.

substrate is removed to illustrate the resistive drawing.

is a partial cross-sectional isometric view illustrating a loaded material transport chamber with multiple resistive lines neucoiaai.es deposited on an interior surface of the loaded material transport chamber according to an example of implementation of the present description, where a part of the substrate is removed to illustrate the helical patterns of the resistive traces.

FIG. 11A is a partial cross-sectional isometric view illustrating a loaded material transport chamber with multiple stamped resistive traces being deposited on an interior surface of the loaded material transport chamber according to an implementation example of the present disclosure, where a part of the substrate is removed to illustrate the patterns of the resistive traces.

FIG. 11B is a partial cross-sectional isometric view illustrating a loaded material transport chamber with multiple resistive traces deposited longitudinally on an inner surface of the loaded material transport chamber according to an implementation example of the present disclosure, where a portion from the substrate is removed to illustrate the patterns of the resistive traces.

FIG. 12 is a partial cross-sectional isometric view illustrating a loaded material transport chamber with a stamped resistive line being deposited on a lower surface of the loaded material transport chamber, where the substrate is advanced longitudinally at two different speeds in accordance with an example of implementation of the present description, and where a part of the substrate is removed to illustrate the drawing of the resistive trace.

FIG. 13A is a partial cross-sectional isometric view illustrating a loaded material transport chamber with a resistive line stamped on an interior surface of the loaded material transport chamber, where the substrate is advanced longitudinally at two different speeds according to a implementation example of the present description, and where a portion of the substrate is removed to illustrate the drawing of the resistive trace.

FIG. 13B is a partial cross-sectional isometric view illustrating a loaded material transport chamber with a stamped resistive trace deposited on an interior surface of the loaded material transport chamber, where the substrate is advanced longitudinally at two different speeds according to an example of implementation of the present description, and where a part of the substrate is removed to illustrate the drawing of the resistive trace.

FIG. 14A is a partial cross-sectional isometric view illustrating a loaded material transport chamber with a stamped resistive trace deposited on an interior surface of the loaded material transport chamber, where the substrate is advanced longitudinally at two different speeds according to an example of implementation of the present description, and where a part of the substrate is removed to illustrate the drawing of the resistive trace.

FIG. 14B is a partial cross-sectional isometric view illustrating a loaded material transport chamber with a stamped resistive trace deposited on an interior surface of the loaded material transport chamber, where the substrate is advanced longitudinally at two different speeds according to an example of implementation of the present description, and where a part of the substrate is removed to illustrate the drawing of the resistive trace.

FIG. 15A is a partial cross-sectional isometric view illustrating a loaded material transport chamber with a secondary helical resistive trace

<td>deposited</td><td>on an inner surface of the chamber of</td>

<td>transport</td><td>of loaded material, where the resistive trace</td>

<td>helical</td><td>secondary is deposited on a coating</td>

<td>resistive</td><td>primary according to an example of</td>

implementation of the present description, and where a part of the substrate is removed to illustrate the design of the resistive trace.

FIG. 15B is a final cross-sectional view of the loaded material transport chamber illustrated in FIG. 15A.

FIG. 16 is a partial isometric view of a loaded material transport chamber with a stamped resistive trace deposited on an interior surface of the loaded material transport chamber according to an implementation example of the present disclosure, where a portion of the substrate is removed to illustrate the pattern of the resistive trace.

FIG. 17 is a partial cross-sectional isometric view illustrating a loaded material transport chamber with a series of concentric resistive lines applied to the interior surface of the loaded material transport chamber and linked by a longitudinal resistive line, where the longitudinal resistive line is in electrical contact with opposite ends of the loaded material transport chamber according to an example implementation of the present description, and where a part of the substrate is removed to illustrate the drawings of the resistive traces.

FIG. 18 is an isometric view of the loaded material transport chamber illustrated in FIG. 17.

FIG. 19 is an elevation view of the cross section of the loaded material transport chamber illustrated in FIG. 17.

FIG. 20 is a diagrammatic illustration of multiple resistive traces linked by a longitudinal resistive trace in accordance with an implementation example of the present disclosure, the strengths of the multiple resistive traces and the longitudinal resistive trace are further illustrated.

Detailed description of the invention

FIG. 1 is an illustration of a spectrometer system, such as an ion mobility spectrometer (IMS) system 100. Although IMS detection techniques are described herein, it should be noted that a variety of different spectrometers can benefit from the structures, techniques, and approaches of the present description. It is the intent of the description to encompass and include such changes. IMS 100 systems may include spectrometry equipment that employs detection techniques without heating (eg, surrounding (ambient) temperature. For example, an IMS 100 system can be configured as a lightweight explosive detector. However, it should be noted that An explosives detector is provided by way of example only and is not restrictive of the present disclosure.

Thus, the techniques of the present description can be used with other spectrometric configurations.

For example, an IMS system

100 can be configured as a chemical detector.

Furthermore, in other imp 1 ementad one s, the systems

IMS

100 they can employ heated detection techniques.

set up

For example, an IMS 100 system can a gently heated detector, a fully

100 may include a sample detector for a sample

For example, entry for the

In

104 heated, etc. A detector device system, such as

IMS a sample 102, which has to introduce material (through an example receiver port, particles) of interest to a chamber / region of the sample detector

102 can of reaction.

have one where the air that can be sampled is admitted detector some can have another example spectrometry

IMS), where chromatograph shows implementations, the detector shows

102 device connected in IMS mobility system the detector such as a line chromatograph with input 104.

100 can be configured from gas gas chromatography ion

For sample 102 it is coupled with the gas (GC) for common sample introduction where a GC capillary column is connected to the sample 102 detector with ionized molecules as they elute from GC). However, gas chromatography is provided by way of restriction of the present sample 102 detection including, but only example may be used and is not description. Thus, the detector with other instrumentation not necessarily limited to high pressure liquid chromatography (HPLC), ion mobility spectrometry-mass spectrometry (IMS-MS) (eg, with quadrupole, flight time, and / or techniques Fourier transformation cyclotron resonance), liquid chromatography-mobility spectrometry of mass ion spectrometry (LC-IMS-MS), etc.

Referring now to FIG. 2, inlet 104 is defined by an ion detection assembly 106. Ion detection assembly 106 includes an input assembly 108, a reaction / ionization chamber (eg, a reaction chamber 132), a gate 134 , a deflection chamber (eg, a deflection tube 110), a collector assembly 112. Bypass tube 110 and / or reaction chamber 132 comprises a chamber (eg tube 114) having one or more walls formed of substantially non-conductive material (eg insulator) including but not necessarily limited to ceramic material (eg kaolinite, aluminum oxide, crystalline oxide, a nitride material, a carbide material, silicon carbide, tungsten carbide, etc.), glass, porcelain, polymer, and / or composite material. However, these materials are provided and are not restrictive of the pre-implementations, tube 114 materials. For example, the semiconductor material, which is more uniform electrical within a stamped resistive line (for example, with respect to insulation). In modalities by way of example only and entity description. Thus, in others it may be constructed using other tubes 114, it is constructed that a field of tube 114 can be provided when used with deposited within tube 114. 1 tube constructed of the material, one or both of the description, the diversion chamber and the reaction chamber / ionization are configured as a loaded material transport chamber including tube 114 as described herein. For example, in some embodiments, diversion tube 110 includes tube 114. In other embodiments, reaction chamber 132 includes tube 114. In still other embodiments, diversion tube 110 and reaction chamber both include tube 114 (eg, including a separate tube 114, both using the same tube 114 , each using parts of the same tube 114, etc.). However, it should be noted that the diversion chamber and reaction / ionization chambers are provided by way of example only and are not limiting of the present disclosure. In other embodiments, a loaded material transport chamber including tube 114 is configured differently.

Tube 114 has an inner surface 116 and a

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FROM HIOHEDAÍ) outer surface 118. Whether both exuemua ut¡ ± ludo 114 and / or one or more deviation segments of tube 114 are open and allow material (eg steam, particulates, etc.) to pass through of tube 114. A stamped resistive line 120 is deposited on the inner surface 116 and / or the outer surface 118 of tube 114. For example, a resistive line 120 is printed on the outer surface 118 of tube 114. For example, a resistive trace 120 is printed on the inner surface 116 of tube 114 and / or the outer surface 118 of tube 114 using conductive ink, conductive paste, vacuum deposition, electrodeposition, chemical treatment, and so on. . In some examples, deflection tube 110 includes more than one stamped resistive trace, such as a first resistive trace 120 printed on the outer surface 118 of tube 114. A stamped resistive trace provides electrical conductivity along tube 114, including electrical conductivity on tube surface 114 (for example, on a stamped resistive trace deposited along inner surface 116 and / or outer surface 118 of tube 114). The stamped resistive traces can be printed on various regions of a detection assembly 106, including, but not necessarily limited to: an input region, a reaction region, and so on.

As described herein, resistive traces

120 they provide a small internal active area (eg with respect to the typical stackable diversion tube). Furthermore, a surface of tube 114 on which one or more of resistive traces 120 are arranged is at least substantially free of gaps and / or cavities in which contaminants can accumulate, which could otherwise spread and / or complicate maintenance procedures on tube 114, such as rinse cycles and so on. Resistive traces 120 can provide a continuous, consistent, and / or substantially uniform temperature and / or electric field along the length of tube 114. In embodiments of the disclosure, the geometry of a resistive trace 120 allows for higher total resistance (eg, as used in high voltage (HV) power supply implementations with conductive trace material that has comparatively lower resistivity and can provide better surface resistivity stability over time. Furthermore, in accordance with the present description, the configurations described herein can reduce and / or minimize electric fields in a direction generally perpendicular to the longitudinal axis of tube 114, while reducing and / or minimizing the penetration of external electric fields in the inside of tube 114.

As shown, a diversion tube 110 may be of unitary construction, which can provide more reliability than, for example, a typical stackable diversion tube configuration. Furthermore, the diversion tube 110 does not necessarily require an external housing, thus potentially reducing the costs associated with manufacturing and / or maintaining, for example, a system 100. In example implementations, a diversion tube 110 does not necessarily require an external heating element. For example, a heating element (for example, one or more of the resistive traces 120) can be deposited on the tube 114 (for example, deposited on the outer surface 118 of the tube 114) and operate to establish a controlled temperature (for example , heated) for the tube. Such configurations can further reduce the cost and / or complexity of manufacturing a system 100 as described herein. In some embodiments, a resistive trace 120 deposited on the outer surface 118 of tube 114 is configured to produce similar electrical potential as a resistive trace 120 deposited on the inner surface 116 of tube 114 (for example, to provide improved uniformity of the electric field within tube 114).

As shown in FIG. 3, a resistive trace 120 can be configured as a helical resistive trace with multiple curves deposited adjacent to each other on the inner surface 116 of tube 114. As used herein, the term 2curve is associated with the partial circumferential travel or complete with a segment of a resistive line stamped with respect to the inner surface 116 of tube 114 and / or the outer surface 118 of tube 114. In some implementations, a curve may be oriented at an angle of a defined perpendicular direction with respect to the longitudinal axis 126 of tube 114 (for example, in the case of helical resistive strokes 120 shown in FIGS. 3 and 6). In addition, a curve can generally be oriented (eg, at least substantially (perpendicular to the longitudinal axis 126 of tube 114). For example, as shown in FIGS. 4 and 5, resistive traces 120 may be configured with multiple curves deposited adjacent to each other on inner surface 116 of tube 114, where one or more of the curves are oriented at least substantially perpendicular to longitudinal axis 126 of tube 114. One curve it can be associated with the complete circumferential travel of a segment of a resistive line stamped with respect to the inner surface 116 of tube 114 (eg, as shown in FIG. 3) and / or the outer surface 118 of tube 114 (eg, as shown in FIG. 6). A curve can also be associated with the partial circumferential travel of a segment of a stamped resistive trace with respect to the inner surface 116 of tube 114 (for example as shown in FIG. 4 with

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curves of more than two hundred and seventy degrees (2 / U'j but less than three hundred and sixty degrees (360 °) and FIG. 5 with curves of less than two hundred and seventy degrees (270 °)).

In embodiments of the description, the number of curves can vary (eg, depending on the geometry of a particular chamber, operating voltage requirements, a desired uniformity for the generated electric field, and so on). For example, a gap between adjacent curves of a resistive trace 120 may be limited by voltage drop. Furthermore, the amplitude of a resistive trace 120 can be determined based on the angle between the resistive trace 120 and the longitudinal axis 126 of the tube 114. For example, a resistive trace 120 with a larger amplitude can be used with a larger angle between the resistive trace 120 and longitudinal axis 126 and produce a larger deflection of material paths. In this way, the gaps between the curves / rings or their overlapping groups can be selected based on a minimum distance to reliably withstand the operating voltage, and the curves / rings amplitudes of their overlapping groups can be selected based on a maximum amplitude to maintain substantial perpendicularity of the curves / hoops of their overlapping groups with respect to the axis of the camera. In one configuration, a resistive trace 120 can include eighteen (18) curves. In another configuration, a resistive trace 120 can include thirty-six (36) curves. In a further configuration, a resistive trace 120 may include seventy-two (72) curves. However, these configurations are provided by way of example only and are not restrictive of the present disclosure. Thus, in other configurations, a resistive trace 120 may include minus thirty-six (36) curves, between thirty-six (36) curves and seventy two curves, and so on.

In some implementations, each turn of a stamped resistive trace is electrically connected to an adjacent series curve. For example, as shown in

FIG.

3, the adjacent curves of the helical resistive trace 120 are connected to each other on the inner surface 116 of the tube 114. Referring now to FIGS. 4 and 5 adjacent curves of resistive trace 120 may also be connected together using one or more bridges 128. As shown in FIGS. 4 and 5, the adjacent curves of resistive trace 120 can be connected together using bridges 128 deposited on the inner surface 116 of tube 114.

Referring generally to FIGS. 8 through 15B, an application tool can be used to apply various resistive line patterns to the inner and / or upper surfaces of a non-conductive or semiconductor tube. In _ τ · Ο

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Description modalities, the relative motion of the tube tube and the application tool can be varied to create different resistive drawings. For example, as shown in FIG. 8 a resistive trace of ink or conductive film 120 is applied to the inner surface 116 and / or the outer surface 118 of tube 114 by rotating tube 114 at a controlled rate (eg, at least substantially constant), while tube 114 is made advancing longitudinally (eg, horizontally) relative to a stationary or at least substantially stationary application tool such as an ink application pen 122. Movement of tube 114 relative to ink pen 122 creates a pattern on inner surface 116 and / or outer surface 118 of tube 114.

As described herein, the terms referring to the movement of the tube 114 and / or the ink pen 122, such as turning, feeding, and so on, are used to describe the relative movement of the tube 114 with respect to to the ink jetting pen 122. Thus, in some embodiments, tube 114 is rotated as the ink jetting pen 122 advances. In other embodiments, the ink application pen 122 is rotated as tube 114 advances. In additional embodiments, tube 114 and ink pen 122 are both rotated as one or both advance. Even in additional embodiments, tube 114 and ink pen 122 both advance while one or both rotate. In additional embodiments, the ink application pen 122 is rotated and advanced while tube 114 is held stationary, or at least substantially stationary, and so on.

Different speeds or sequences of motion for tube 114 and / or ink pen 122 are used to create different patterns on tube 114.

With reference to FIG. 9, a stamped resistive line comprising a continuous conductive lining 124 is established between opposite ends of tube 114 by pulling tube 114 at a controlled speed while longitudinal movement of tube 114 is very slow with respect to movement of tube 114. This difference at the relative speeds of rotation and longitudinal movement it creates a well-staked conductive spiral. In some embodiments, adjacent segments of resistive trace 120 overlap, resulting in continuous conductive coating 124 on inner surface 116 and / or outer surface 118 of tube 114. Conductive inks and / or films with sufficiently high resistance can be deposited in this configuration to achieve a particular total deflection tube resistance.

As shown in FIG. 10, the strokes at multiple helical resistance 120 can be established in tube 114 by repositioning the application tool at one end of tube 114 at ninety degrees (90 °) or another division of three hundred sixty degrees (360 °) with respect to the origin of the stroke pre-resistive (20 at the end of tube 114. This technique can be used to create multiple resistive strokes 120 substantially parallel to each other. In embodiments of the disclosure, the substantially parallel resistive traces 120 are used to provide greater symmetry in the

<td>tube ends</td><td>114 (for example with</td><td>With respect to</td><td>stroke</td>

<td>simple resistive</td><td> 120) .</td><td></td><td></td>

<td>Referring</td><td>to FIGS. 11A and</td><td>11Β, the</td><td>strokes</td>

Multiple resistors 120 can be generated between the ends of tube 114. As shown in FIG. 11A, rotation of tube 114 at a controlled speed (eg, at least substantially constant), with longitudinal motion at a relatively high speed in a first direction, creates a slightly curved resistive line 120 between opposite ends of tube 114. Then, longitudinal movement of tube 114 in a second, opposite direction is used to establish another consecutive one of parallel resistive tracing 120 between opposite ends of tube 114. In this way, a series of generally parallel resistive traces 120 are deposited between the ends of tube 114. In other embodiments, parallel resistive lines 120 are established between opposite ends of tube 114 (eg, as shown in FIG. 11B). In embodiments of the disclosure, the techniques can be used to provide more consistent electrical connection between the ends of tube 114 (eg, relative to single resistive trace 120).

As shown in FIG. 12, various drawings of the line patterns, such as the line drawings shown in FIGS. 8-11, can be implemented together. In these configurations, rotation of tube 114 at a controlled speed (eg, at least substantially constant) with relatively slower longitudinal motion for a first period of time results in a resistance trace curve 120. The longitudinal movement of tube 114 can also be stopped during the first period of time. This movement is followed by the continuous rotation of tube 114 at the controlled speed with relatively faster longitudinal movement for one second (eg shorter) period of time, resulting in a slightly curved single bridge 128. Rotation of tube 114 can also be stopped during the second period of time resulting in a substantially linear bridge 128. Then, rotation of tube 114 at controlled speed with longitudinal movement at relatively slower speed results in another curve in the resistive line. 120. Again, this movement is followed by the generation of another bridge 128, another curve of resistive trace 120, and so on. In this way, the slow alternating and / or stopped sequences, and the relatively faster longitudinal movement of tube 114 results in a series of curves of a resistive trace 120 connected to each other along the longitudinal axis 126 of tube 114 with bridges 128. In some embodiments, the coaxial resistive curve portions of resistive trace 120 are deposited using other methods, including but not necessarily limited to vacuum deposition, prior to using the ink application pen 122 to deposit one or more bridges 128 to along the length of the tube 114 to connect the coaxial bend portions and increase the uniformity of the overall strength of the tube 114.

As shown in FIGS. 13Ά and 13B, additional combinations of the above approaches can be implemented in the form of a well-stamped, patterned resistive trace comprising a continuous conductive coating 124 deposited at a comparatively slower longitudinal velocity alternating with connecting bridges 128 deposited at a comparatively more longitudinal velocity high. FIG. 13A represents two continuously clad parts connected with a single conductor bridge 128.

FIG. 13B represents many continuously coated short parts connected with multiple bridges 128. In some embodiments, for example, to achieve at least substantial field uniformity, the width of the continuously coated part and / or the width of a gap between the continuously coated parts is they are configured to approximate a particular drawing, such as the drawing described with reference to FIG. 12. In embodiments of the disclosure, the stamped resistive traces described in FIGS. 13A and 13B can be used to create an intensified electric field for moving ions, where each bridge 128 creates a resistive drop between adjacent parts of the continuous conductive coating 124. For example, a voltage drop can be created between adjacent parts continuously clad by the highest resistance of bridge 128 with respect to continuous conductive cladding 124 (for example, due to the reduced cross-sectional area of ​​bridge 128 with respect to continuous conductive cladding 124). In addition, the printed resistive strokes can be applied using a resistant ink by means of high pressure delivery through an application tool, such as a stainless steel needle. The movement of the tube 114 and / or the application tool can be controlled using, for example, one or more intensified movements.

Referring now to FIGS. 14A and 14B, the additional combinations of approaches previously described can be implemented in the form of a stamped resistive stroke comprising freely staked helical resistive strokes 120, which can be deposited at a moderate longitudinal velocity alternating with bridges 128. FIG. 11A depicts two large helical resistive trace portions connected with bridges 128. FIG. 14B

<td colspan="2">represents many portions</td><td colspan="2">stroke</td><td colspan="3">helical resistive</td>

<td>short connected with</td><td>bridges</td><td> 128 .</td><td></td><td></td><td></td><td></td>

<td>As shown</td><td>in the</td><td>FIGS.</td><td>15A</td><td>and 15B,</td><td>The tube</td><td> 114</td>

<td>can also have</td><td colspan="2">coating</td><td colspan="2">driver</td><td>continuous</td><td> 140</td>

applied on its inner surface 116 and / or outer surface 118, on which a secondary resistive trace 120 can be applied. The secondary resistive trace 120 can be helical or any combination of drawings represented in, for example, the preceding figures. In this configuration, one or more resistive traces 120 can reduce and / or minimize electric field distortions caused by resistive and / or physical imperfections in the uniformity of the primary continuous conductive coating 140. In addition, the primary continuous conductive coating 140 can reduce and / or minimize the influence of external electric fields inside the tube 114, which acts as the deflection region 136. In some embodiments, the total resistance of the primary continuous conductive coating 140 through tube 114 is greater than the resistance of the secondary resistive trace 120. For example, the resistance of the primary continuous conductive coating 140 may be about five hundred mega ohms (500 ΜΩ ), and the resistance of resistive trace 120 can be in the range of about twenty mega ohms (20ΜΩ) to two hundred mega ohms (ΜΩ).

Referring now to FIG. 16, in some embodiments tube 114 includes a stamped resistive layer 142 comprising one or more openings (eg, grooves 144) oriented in directions generally (eg, at least substantially) perpendicular to the longitudinal axis 126 of tube 114. In embodiments From the disclosure, the apertures are configured to reduce or minimize the radial electric field caused by potential electrical asymmetry of, for example, a continuous layer. In the configuration shown in FIG. 16, grooves 144 are axially interspersed. However, the configuration is provided by way of example and is not intended to limit the present description. In other embodiments, the grooves 144 may be formed or aligned differently.

In some embodiments, a tube 114 has multiple resistive traces 120 (eg, conductive rings) applied to its inner surface 116 and / or outer surface 118, and resistive traces 120 are bonded (eg, concentrated) using one or more resistive traces longitudinal

146. For example, as shown at 20, resistive strokes 120 configured as a series of concentric resistive ink rings are applied to the inner surface 116 of the tube

114. Resistive strokes

120 then they are linked by longitudinal resistive line

146 configured as a straight longitudinal resistive ink trace connected between, for example, two connectors 130 placed in tube 114. For example, longitudinal resistive trace 146 is an electrical contact with metallic ends of tube 114. However, it should be noted that the Concentric resistive ink rings and generally straight longitudinal resistive ink stroke are provided by way of example and are not intended to limit the present disclosure. In other embodiments, differently configured resistive traces 120 and / or longitudinal resistive traces 146 are used. For example, a longitudinal resistive trace 146 may be slightly curved, sinusoidal, and so on. Furthermore, one or more of the resistive traces 120 can be helical or any combination of the patterns represented, for example, in the preceding figures.

In some embodiments, the resistivity of the ink comprising the concentric rings is greater than (eg, substantially greater than) the resistivity of the ink comprising the straight continuous line. For example, the

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Total resistance of the generally straight longitudinal resistive trace on its own is about one hundred mega ohms (100ΜΩ). This configuration can be used to reduce (eg, minimize) the effect of additional parallel resistance applied across the generally straight longitudinal resistive ink stroke (eg, as shown in FIG. 20). However, this resistance value is provided by way of example and is not intended to limit the present description. In other embodiments, the overall resistance of the generally straight longitudinal resistive ink stroke may be greater than or less than about one hundred mega ohms.

In some configurations, one or more embossed resistive traces deposited on an outer surface 118 of tube 114 are electrically connected to one or more embossed resistive traces deposited on an interior surface 116 of tube 114. For example, bridges 128 can be used to connect a resistive trace 120 deposited on the inner surface 116 of tube 114 to one or more resistive traces 120 deposited on the outer surface 118 of tube 114 (eg connected in series). However, this configuration is provided by way of example only and is not intended to be restrictive of the present disclosure. In other implementations, one or more resistive traces 120 deposited on the outer surface 118 of tube 114 and one

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or more resistive traces 120 deposited on ± inner surface 116 of tube 114 are connected separately (eg, connected in parallel).

In some configurations, the length of tube 114 is between at least about two centimeters (2cm) and fifteen centimeters (15cm). The diameter of the inner surface 116 of tube 114 may be between at least about two point five millimeters (2.5 mm) and twenty-five millimeters (25mm). Furthermore, the diameter of the outer surface 118 of tube 114 may be between at least about three millimeters (3mm) and thirty millimeters (30mm). However, these dimensions are provided by way of example only and are not intended to be restrictive of the present disclosure. Thus, in other configurations, the length of tube 114 may be less than at least about two centimeters (2cm) or greater than at least about fifteen centimeters (15cm). The diameter of the inner surface 116 of tube 114 may be less than at least about two point five millimeters (2.5mm) or greater than at least about twenty-five millimeters (25mm). Furthermore, the diameter of the outer surface 118 of tube 114 may be less than at least about three millimeters (3mm) or greater than at least about thirty millimeters (30mm).

The amplitude of a stamped resistive trace (for example, measured in a generally longitudinal section parallel to the longitudinal axis 126 of tube 114) can be between at least about one tenth of a millimeter (O.lmm) and one millimeter (1 mm). For example, the amplitude of resistive trace 120 may be at least about 0.50 millimeters (twenty thousandths of an inch (0.020)). In some configurations, resistive trace 120 has at least about two curves per centimeter. For example, the pitch of a stamped resistive trace, which can be defined as the spacing between the center lines of the deposited material forming adjacent curves of the stamped resistive trace may be between at least about one-tenth of a millimeter (0.1 mm) and one millimeter ( 1 mm). For example, the pitch of a resistive trace 120 may be at least approximately 0.71 millimeters (twenty-eight thousandths of an inch (0.028)). However, these dimensions are provided by way of example only and are not intended to be restrictive of the present disclosure. Thus, in other configurations, the amplitude of a stamped resistive trace may be less than at least about one-tenth of a millimeter (0.1 mm) or greater than one millimeter (1 mm). The resistive trace 120 can have more or less than at least about two curves per centimeter. In addition, the pitch of a stamped resistive trace may be less than at least about one tenth of a millimeter (0.1 mm) or greater than _j £ la Í'KUf, tL «iJ LltíililixQsB · ..... W at least approximately millimeter (1 mm).

In some examples, one or more characteristics of resistive traces 120 may be generally consistent over the entire length of the tube

114. For example, the pitch of resistive trace 120 can generally be constant over the entire length of the tube

114.

In other examples, one or more characteristics of resistive traces 120 may vary over the entire length of tube 114.

For example, the pitch between adjacent curves of a stamped resistive trace may vary in tube 114 (for example, increasing and / or amplitude and / or thickness of a stamped resistive trace may also vary over the entire length of the tube

114.

One or more of the resistive traces 120 is configured to connect to an electrical power source to energize the resistive trace and establish an electric field. For example, one end of the diversion tube 110 may be capped with a flange coated with conductive material (eg, a metallic conductive flange). One or more of the resistive traces 120 can be electrically connected to connector 130, which can be connected to an electrical power source (eg power supply) to energize a resistive trace and establish an electric field. However, a conductive tab is provided by way of example only and is not intended to be restrictive of the present disclosure. In other implementations, one or more of the resistive traces 120 may be connected to an electrical power source using other connectors including, but not necessarily limited to, a conductive cap, conductive liner, and so on. When energized, bypass tube 110 can be used to provide controllable transport of charged materials (eg, ions) from the end of bypass tube 110 to the other end of bypass tube 110.

Input 104 can employ a variety of sample introduction approaches. In some examples, an air flow can be used. In other examples, IMS 100 systems can use a variety of fluids and / or gases to attract material to inlet 104. Approaches to attract material to inlet 104 include the use of fans, pressurized gases, a vacuum created by a bypass gas flowing through a bypass chamber / region, and so on. For example, sample detector 102 can be connected to a sampling line, where air from the surrounding environment (eg, ambient air) is attracted to the sampling line using a fan. IMS 100 systems can operate at substantially ambient pressure, although an air stream from another fluid can be used to introduce sample material into a reaction region. In other examples, IMS 100 systems can operate at lower pressures (ie, pressures less than ambient pressure). In addition, the IMS 100 systems may include other components to supply the introduction of material from a sample source. For example, a desorber, such as a heater, may be included with an IMS 100 system to cause at least a portion of a sample to evaporate (eg, enter its gas phase) so the sample portion may be attracted to input 104. By For example, a test probe, swab, wipe, or the like can be used to obtain a sample of interest from a surface. The test probe can then be used to deliver the sample to input 104 of an IMS 100 system. IMS 100 systems can also include a preconcentrator to concentrate or cause a bolus of material to enter a reaction region.

A portion of a sample may be attracted through an inlet 104 configured as a small aperture inlet (eg, a pinhole) in sample detector 102 using, for example, a diaphragm in fluid communication with an interior volume of the detector Sample 102. For example, when the internal pressure in the interior volume is reduced by the movement of the diaphragm, a part of the sample is transferred from the inlet 104 in the sample detector 102 through the pinhole. After passing through the pinhole, the sample portion enters input assembly 108. Inlet assembly 108 may include a reaction chamber 132 where the sample is ionized using an ionization source, such as a corona discharge ionizer (eg, having a corona discharge point) and possibly modified (eg , using one or more reagents). However, a corona discharge ionizer is provided by way of example only and is not intended to be limiting of the present disclosure. Other exemplary ionization sources include, but are not necessarily limited to, electrical ionization sources, such as a photoionization source, an electrowel source, a matrix-assisted laser desorption ionization (MALDI) source, a source (^2UAm) Americium-241 (⁶³Ni) nickel-63, and so on. In some examples, the ionization source can ionize material from a sample of interest in multiple stages. For example, the ionization source can generate a corona that ionizes gases in reaction chamber 132 that are subsequently used to ionize the material of interest. Example gases include, but are not necessarily limited to nitrogen, water vapor, gases included in the air, and so on.

<td>In</td><td>implementations,</td><td>the assembly</td><td>of</td><td>entry 108</td><td>can</td>

<td colspan="2">operate in positive mode,</td><td colspan="2">negatively,</td><td>switch between</td><td>mode</td>

<td>positive</td><td>and negative and</td><td>etc.</td><td>By</td><td>example in</td><td>mode</td>

<td>positive</td><td>source</td><td>ionization</td><td colspan="2">It can generate</td><td>ions</td>

positive from a sample of interest, while in negative mode the ionization source can generate negative ions. Operation of the input assembly 108 in positive mode, negative mode, or switching between positive and negative mode may depend on implementation preferences, a predicted sample type (eg, explosives, narcotics, toxic industrial chemicals), and so on. Furthermore, the ionization source can be pulsed periodically (eg, based on sample input, gate opening, occurrence of a case, and so on).

The sample ions can then be directed towards a gate assembly using an electric field (eg generated in the same or a similar way as the previously described deflection chamber). The gate assembly includes one or more (eg gate gates) and can be opened monetarily to allow small groups of the sample ions to enter the diversion region.

For example, the input assembly

108 may include an electronic shutter or gate

134 at the entrance end of a diversion region 136.

In implementations, gate 134 controls the entry of ions into the deflection region

136. For example, gate 134 may include a mesh of wires to which an electrical potential difference is applied or removed. Deflection region 136 has electrodes (for example, focusing on rings formed by one or more of resistive traces 120) spaced along its length to produce an electric field to attract ions along deflection region 136 and / or to direct the ions towards a detector arranged generally opposite the gate 134 in the deflection region 136. For example, deflection region 136, including electrodes, can create a substantially uniform field in deflection region 136. Sample ions can be collected on a collecting electrode, which can be connected to analysis instrumentation to analyze flight times. of the various sample ions. For example, a collector plate 138 at the far end of deflection region 136 can collect ions that pass along deflection region 136.

Bypass tube 110 can be used to separate ions admitted to bypass region 136 based on the ion mobility of the individual ions. Ion mobility is determined by the charge on an ion, an ion mass, geometry, and so on. In this way, IMS 100 systems can separate ions based on time of flight. Deflection region 136 can have a substantially uniform electric field that extends from gate 134 to a collector. The collector may be a collector plate 138 (eg, Faradayj plate that detects ions based on their charge as they contact the collector plate 138. In implementations, a bypass gas can be supplied through the bypass region 136 in one direction generally opposite the path of travel ions to collector plate 138. For example, bypass gas may flow from adjacent collector plate 138 to gate 134. Example bypass gases include, but are not necessarily limited to: nitrogen, helium, air, recirculating air (eg, air that is clean and / or dry), and so on. For example, a pump can be used to circulate air along deflection region 136 against the direction of ion flow. The air can be dried and cleaned using for example a molecular sieve package.

In implementations, the detector displays

102 may include a variety of components to promote material identification

For example, sample detector 102 may include one or more cells containing a calibrant and / or doping component.

The calibrant can be used to calibrate the measurement of ion mobility. The dopant can be used to selectively ionize molecules

The dopant can also be combined with a sample and ionized material to form an ion that can be more effectively detected than an ion that corresponds to the sample material alone. The dopant can be provided to one or more of inlet 104, reaction chamber 132, and / or deflection region 136. Sample detector 102 can be configured to provide dopant to different locations, possibly at different times during detector operation. Sample 102. Sample detector 102 can be configured to coordinate dopant delivery with operation of other components of an IMS 100 system.

A controller can detect the change in charge on the collecting plate 138 as the ions reached it. Thus, the controller can identify materials from their corresponding ions. In implementations, the harvester can also be used to control the opening of the gate 134 to produce a time-of-flight spectrum of the different ions throughout the deflection region 136. For example, the controller can be used to control the voltages applied to gate 134. The operation of gate 134 can be controlled to occur periodically, upon occurrence of an event, and so on. For example, the controller can adjust how long gate 134 is open and / or closed based on the occurrence of an event (eg, crown discharge), periodically, and so on. In addition, the controller can change the electrical potential applied to gate 134 based on the mode of the ionization source (eg, whether the assembly "cu

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In implementations, an IMS 100 system, including some or all of the components, can operate under computer control. For example, a processor may be included with or in an IMS 100 system to control the components and functions of the IMS 100 systems described herein using software, firmware, hardware (eg, fixed logic circuits), manual processing, or a combination of the same. The terms controller, functionality, service, and logic as used herein generally represent software, firmware, hardware, or a combination of software, firmware, or hardware in conjunction with IMS 100 system control. In the case of an implementation Software, module, functionality, or logic represents the program code that performs specific tasks when run on a processor (for example, CPU or CPUs). The program code may be stored on one or more computer readable memory devices (eg, internal memory and / or one or more tangible media), and so on. The structures, functions, approaches, and techniques described herein can be implemented on a variety of commercial computing platforms that have a variety of processors.

For example, sample detector 10 may be coupled to the controller to control the power supplied to resistive traces 120. The controller may include a processor module, a communications module, and a memory module. The processor module provides the processing functionality for the controller and can include any number of processors, micro-controllers, or other processing systems, and external or resident memory for storing data and other information accessed or generated by the controller. The processor module may execute one or more software programs, which implement techniques described herein. The processor module is not limited by the materials of which it is formed or the processing mechanisms employed there, and as such can be implemented by means of semiconductor (s) and / or transistors (for example, using electronic integrated circuit components ( IC)), and so on. The communication module is operationally configured to communicate with components of the sample detector 102. The communication module is also communicatively coupled with the processor module (eg, for sample detector communication inputs 102 to the processor module). The communications module and / or processor module can also be configured to communicate with a variety of different networks, including, but not necessarily limited to, the internet, a cellular telephone network, a local area network (LAN), an area network broad (WAN), a wireless network, a public telephone network, an intranet, and so on.

The memory module is an example of tangible computer readable media that provides storage functionality to store various data associated with the operation of the controller, such as software programs and / or code segments or other data to instruct the processing module and possibly other controller components to perform the steps described herein. Thus, the memory can store data, such as an instruction program to operate the IMS 100 system (including its components), spectral data, and so on. Although a simple memory module is shown, a wide variety of types of memory combinations (eg, tangible, non-transient memory) can be employed. The memory module can be integral with the processor module, can include stand-alone memory, or can be a combination of both.

The memory module may include, but is not necessarily limited to renewable and non-renewable memory components, such as Random Access Memory (RAM), Read Only Memory (ROM), flash memory (for example,

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In implementations, a variety of analytical devices can make use of the structures, techniques, approaches, etc. described herein. Thus, although IMS 100 systems are described herein, a variety of analytical instruments can make use of the techniques, approaches, structures described, and so on. These devices can be configured with limited functionality (eg, thin devices) or robust functionality (eg, thick devices). Thus, a device functionality can relate to the device software or hardware resources, eg, process power, memory (eg, data storage capacity), analytical skill, and so on.

Sample processes

The following discussion describes example techniques for fabricating the charged material transport chamber by depositing one or more stamped resistive traces on one or more of an inner surface or outer surface of a non-conductive or semiconductor tube. FIG. 7 depicts a process 700, in an exemplary implementation for manufacturing a loaded material transport chamber such as the example diversion tube 110 illustrated in FIGS. 1 to 6 and described below.

In the illustrated process 700, a stamped resistive trace is deposited on one or more of the inner or outer surface of the tube formed of substantially non-conductive material and / or semiconductor material (Block 710). For example, with reference to FIGS. 1 through 6, resistive trace 120 is deposited on inner surface 116 of tube 114 and / or outer surface 118 of tube 114. The resistive trace 120 may be deposited (for example, printed) on the inner surface 116 of the tube 114 and / or the outer surface 118 of the tube 114 as described in US Patent with publication number 2008/0278278, filed on 21 July 2008, titled FINE LINE THICK FILM RESISTORS BY PHOTOLITOGRAPHY, United States Patent Number 7,224,258 issued May 29, 2007 and titled Fine line thick film resistors by photolithography, Non-US Patent No. to the publication 2007/026846 filed on May 4, 2007 entitled FINE LINE THICK FILM RESISTORS BY PHOTOLITHOGRAPHY; United States Patent Publication Number 2010/0209318, filed April 28, 2010, and entitled MICROFLUIDIC DEVICES FABRICATED BY DIRECT THICK FILM WRITING AND METHODS THEREOF; United States Patent Number 7,736,592 issued on June 15, 2010, entitled Microfluidic devices manufactured by direct thick film writing and methods thereof; United States Patent publication number 2011/0277803, filed on March 18, 2011 and entitled THERMOCOUPLE DEVICE; and / or United States Patent publication number 4,485,387, issued November 27, 1984 and entitled linking system for producing circuit patterns, which are incorporated herein by reference in their entireties.

In some implementations, a bridge is deposited on one or more of the inner surface of the outer surface of the tube to connect adjacent curves of the resistive traces stamped together (Block 712). For example, with continued reference to FIGS. 1 through 6, jumpers 128 can be used to connect adjacent curves of resistive trace 120 together. In some implementations, another stamped resistive trace is deposited on one or more of the inner surface or the outer surface of the tube (Block 720). For example, with continued reference to

FIGS. 1 to 6, a second resistive trace

120 it is deposited on the outer surface 118 of tube 114.

As described, resistive traces 120 are configured to connect to an electrical power source to establish an electric field (eg, a formed electric field, and

In some connects to substantially etc.) within implementations, a connector from the connect to trace to FIGS. 1 st uniform, from the tube a resistive electric field

114 when energized.

the tube trace, which resistive stamping is configured for the power source example, with continuous reference

6, connector 130 can be formed to connect to resistive traces 120. As connector 130 can be formed as a conductive cap flange, a conductive connector coating 130 can then be connected to described, conductive, and so on.

a source the one

That of electrical energy (for example, a power supply) to energize a stamped resistive trace and establish an electric field.

Although the subject matter has been described in the specific language for structural and / or methodological characteristics, defined in necessarily specific acts, it is to be understood that the subject matter of the attached claims is limited to the characteristics described.

Although no object is discussed is various configurations acts, and apparatus, systems, subsystems, components and so on can be constructed in a variety of ways without departing from this description. Furthermore, the specific features and acts are described as exemplary forms of implementation of the claims.