Manufacturing method for recessed electrical components

TECHNICAL FIELD OF THE INVENTION

The invention relates to the field of micro-electronic devices and relates to the formation of recessed and augmented electrical contacts of wide-band nitride semiconductor components by applying laser micro-processing with ultrashort laser pulses.

State of the art

Patent application DE102013201298A1, published on 31/07/2014, describes a method for forming LED contacts and isolation channels for p / n-type GaN semiconductor junctions using excitation with excimer laser radiation having a photon energy greater than the bandwidth of the GaN reserve energy band. In the described method, the laser beam is formed by projecting through a mask, thus enabling the formation of multiple depressions in a single machining step. Since the laser radiation is projected through a mask, only one type of contact can be formed in the manufacturing process during the laser processing step, which requires the same depth of recess in the semiconductor, a new mask, matching process and a new stage of processing, so that the use of the known forming method is narrow, and it is difficult to form several types of electronic elements in a known manner, which would be combined to form semiconductor devices according to the desired circuit.

U.S. Pat. No. 7,432,142B2, published October 7, 2008, describes a method for fabricating high electron mobility transistors (HEMT) with recessed electrical contacts. Transistor fabrication begins with the formation on a substrate of the III-N group of semiconductor buffer and barrier layers to form a heterocouple in which a high conductivity 2D electron channel is formed. Production of deep-seated ohms and Schottky contacts to control HEMT work begins with a barrier-coated mask such as an oxide of the material such as SiOx or other materials such as AIN, SixN_y. The mask is structured using chemical etching, dry etching, reactive ion etching, or other methods, leaving the mask only in areas where no contact will be formed. Etching forms recesses in the ohmic contacts used in the transistor to form the confluence and source electrodes through the barrier layer to the channel layer, or intervening to the channel layer or crossing the channel layer. Chemical etching, dry etching methods, reactive ion etching are used for etching. The structure can be annealed to eliminate or reduce etching damage to the semiconductor structure. The contact layer is formed by methods such as metal organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), plasma chemical vapor deposition (PECVD), or other methods. The contact well is filled with an n-type semiconductor, such as a highly doped n-type InN, InAIN, AIGaN, AlInGaN, GaN, or other non-nitride semiconductor. Highly alloyed n-type semiconductor in the contact area allows to reduce the contact resistance. The upper contact material may be a metal or a metal alloy. An ohmic contact can be formed in the contact areas, for example from a Ti / AI / Ni / Au layer. The Schottky contact is used as a barrier electrode HEMT, which can be inserted into the depression in the barrier layer or formed on its surface using Ni, Pt, Pd or other Schottky-type contact materials. The mask, along with excess contact material coated on top of the mask, can be removed by etching with HF or other etchant.

U.S. Pat. No. 10,388,753B1, issued August 20, 2019, discloses a method of making HEMT in which a III-N semiconductor heterostructure consisting of a heterocondition and other in situ-grown substrate III-N semiconductor auxiliary layers is coated with a protective SiN mask layer that is structured using photo stencils and photolithography processes. Dry chemical etching is performed by induction plasma-activated ion-etched boron trichloride / chlorine / argon plasma at the confluence and source areas to form wells for ohmic contacts reaching the 2D electron channel layer. metal layers for contacts. The composition of the AIGaN layer is defined as AlxGai-_xN, where x decreases during the augmentation process, thus gradually narrowing the bandwidth of the material.

In the known methods for producing recessed contacts described above, the recess for contact is formed using reactive ion etching or chemical etching or plasma etching techniques. Due to the peculiarities of these methods, the etching in the known methods for the production of recessed contacts described above is realized by means of photolithography and photo stencils. The methods described cause damage to the semiconductor structure and contaminate the surface with excipients used in photolithography and etching processes.

Technical problem solved

The invention aims to extend the possibilities of the method of forming recessed and augmented electrical contacts in semiconductor heterostructures while shortening the forming time of various types of recessed electronic elements and components and saving materials and simplifying the forming technology. In addition, the proposed method allows to increase the conductivity of deep and extended contacts of Group III nitride semiconductor components by forming a depression using ultrashort laser pulse removal in such a way that damage to the semiconductor heterostructure or contamination with excipients or other damage is less than in known ways.

Disclosure of the Invention

The essence of the solution according to the proposed invention is that in the method of forming recessed electronic elements, where the recessed electronic elements can optionally be recessed electrical contacts, and / or connections and / or electronic components formed in a heterostructure of group III-N semiconductor layers, where the layers the compositions are chosen so that that a high-conductivity two-dimensional electron gas (2DEG) channel is formed in the heterosensory buffer layer at the boundary with the III-N barrier layer, and in the areas of said heterostructure in which said recessed elements are to be formed, recesses are formed using laser radiation to fill materials to form elements, where the method comprises the following steps: (a) coating the surface of said heterostructure of said III-N semiconductor layers grown on a substrate with at least one protective layer to form a blank,

(b) the heterostructure prepared in step (a) is placed in a blank in a chamber in which a vacuum is created or filled with an inert or shielding gas, the chamber having a transparent window for the passage of laser radiation,

(c) forming a depression separately for each contact and / or connection and / or electronic component by directing focused ultrashort pulse laser radiation of selected parameters to the workpiece through a transparent cell of the chamber, which removes the protective layer and heterostructure layers a depression of the selected depth in said heterostructure,

d) controllably moves the workpiece and the focused laser beam relative to each other and, after moving to the intended location for the next depression, directs the laser radiation in a manner analogous to step c) to form a depression of the desired shape and depth and / or a desired number of different or uniform dimensions other wells, with appropriate selection of laser radiation parameters,

(e) the depressions formed in steps (c) or (d) are filled with an optionally doped layer of IIIN semiconductors and / or metal compounds to form a recessed electrically conductive and / or electrically semiconductor contact and / or connection, respectively, and / or an electronic component, consisting of an area with a high conductivity 2DEG channel and / or conductive electrical contacts and / or electrically semi-conductive contacts and / or connectors,

(f) remove any remaining protective layer after all intended recessed contacts and / or connections and / or components have been formed,

(g) annealed electrically conductive contacts and connectors and electronic components by rapid annealing to the optimum temperature in an inert gas environment until the metal-high conductivity 2DEG channel contact resistance is reduced,

(h) forming the recessed insulating elements required to separate and / or insulate the elements formed in step (g) after forming the recessed electrical contacts and / or connections and / or electronic components.

The formation of the insulating elements in step h) comprises the following steps:

- forms a depression separately for each insulating element, directs the focused ultrashort pulse laser radiation of the selected parameters through the transparent cell of the chamber, which removes the heterojunction layers in the region of the depression formed, resulting in a high conductivity 2DEG channel,

- moves the workpiece and the focused laser beam in a controlled manner relative to each other and, after moving to the intended location for the other well, directs the focused laser radiation to form the desired shape and depth and / or the desired number of different wells of different or uniform dimensions, respectively laser radiation parameters,

- formed depressions, filled with layers of dielectric material, forming impermeable elements and / or areas.

An ultrashort pulse laser with a pulse duration of between 15 picoseconds and 200 femtoseconds is used to form said wells in the workpiece.

The wavelength of the laser radiation is between 1020 nanometers and 330 nanometers, and the workpiece is exposed to pulsed laser radiation of low to high power (0.1-1.0 MHz) repetition frequency.

The inert or shielding gas which fills the chamber for forming said depressions is argon or nitrogen.

The electronic component may optionally be a transistor or a diode or a resistor or a semiconductor device consisting of transistors, diodes or resistors connected according to a selected circuit.

The recessed contacts and insulating elements can optionally be ohmic contacts, Schottky-type contacts and insulating areas, each of which is subjected to a functional characteristic during production by selecting the parameters of the laser radiation and the corresponding metallic and dielectric fillers.

During production, each component is isolated and / or combined with the other components according to a given scheme.

The remaining protective layer is removed by selective chemical etching.

Utility of the invention

The proposed method of forming recessed electronic elements can form electronic elements for different purposes, such as contacts, connectors, electronic components and insulating areas between them without the use of masks, stencils and photolithography, thus shortening the production process, saving materials and simplifying technology. The proposed method does not require a separate step of matching and layer structuring of the protective layers and the mask, because the laser-selective opening of the protective layers is performed together with the laser micro-processing of the heterostructure of the III-N group semiconductor layers in the formation of wells.

In addition, the advantage of the proposed method is that the formation of recessed wells for electronic elements, the removal of material using ultrashort laser pulses, damage to the semiconductor heterostructure, contamination with excipients or surface morphology are less than the formation of wells by other known methods such as reactive ionization. chemical etching, such as potassium hydroxide etching, dry chemical etching of chlorine or chlorine compounds in plasma. Therefore, the proposed method of forming recessed conductive electrical contacts reduces the contact resistance and at the same time does not reduce the insulation.

In addition, the shape and depth of the depressions can be freely changed by laser micromachining without the use of photolithography and photo stencil matching to form the recesses in the proposed manner.

In addition, the use of toxic compounds such as chlorine compounds or other toxic compounds is avoided by forming the recesses in the proposed manner.

In addition, during laser micromachining, the aim is to assign to each electrical contact its functional characteristics, which are characteristic of conductive, semi-conductive or completely non-conductive electrical contacts.

In addition, the aim is to laser form electrical connections and insulations between all semiconductor devices according to a given circuit.

The invention is explained in detail in the drawings, where

FIG. 1 a-FIG. 1 g shows the production process of an extended submerged contact of a lll-N semiconductor device for the formation of a contact depression using laser ablation and laser micromachining, where:

Fig. 1a shows the heterostructure of semiconductor layers;

Fig. 1b shows a heterostructure of semiconductor layers with a protective layer formed thereon;

Fig. 1c shows depressions of a selected shape formed in a heterostructure;

Fig. 1d shows a heterostructure with an expanded conductive layer;

Fig. 1 e shows a heterostructure after forming a metal layer;

Fig. 1f shows the heterostructure after removing the protective layer and the excess part of the grown semiconductor layer and the metal layer;

FIG. 1 g shows a heterostructure with an extended ohmic contact;

Fig. 2a-Fig. 2e shows a process for the production of recessed ohms and recessed Schottky contacts in a III-N semiconductor device for contact depression formation by laser ablation and laser micromachining, where:

Fig. 2a shows the heterostructure of semiconductor layers;

The protective layer shown in Fig. 2b is formed on the heterostructure of the semiconductor layers;

Fig. 2c shows depressions of the desired shape formed in the heterostructure

Fig. 2d shows an evaporated metal layer in the formed depressions;

Fig. 2e shows a heterostructure with a recessed ohmic contact and a recessed Schottky contact after removing the protective layer and the excess metal layer;

FIG. Figure 3 shows a schematic of an III-N semiconductor device with two types of ohmic contacts, a Schottky contact, and an isolation channel. Such a device may be a HEMT transistor, a diode, a resistor or another microelectronic component;

FIG. Fig. 4 shows a schematic diagram of a method for forming pits in contacts with laser radiation;

FIG. Figure 5a shows augmented ohmic contacts fabricated by a proposed method that are connected by a conductive high conductivity 2D electron gas channel;

Fig. 5b shows the TLM characteristics of ohmic contacts. This is the measured dependence of the total resistance, R, of the contact distance between the two ohmic contacts connected by a high-conductivity 2D electron gas channel, d;

FIG. 6a shows an electrical circuit for interconnecting a diode, a transistor, an inductor and a resistor in a proposed manner;

FIG. 6b is a diagram shown in FIG. 6a.

Description of the implementation of the invention

The heterostructure of the semiconductor layers shown in Fig. 1a consists of a substrate 1, a nucleation layer 2, a buffer layer 3, a buffer layer 4, a high conductivity 2D electron gas region formed at the top of the buffer layer, separated as an optional intermediate layer 6. a barrier layer 7, an optional stress-reducing and surface-passivating layer 8, is covered with a protective layer 9 of S1O2 / AIN, shown in FIG. 1 b.

Substrate 1 is composed of SiC, sapphire or other material suitable for growing III-N semiconductor layers. The nucleation layer 2 is a low temperature grown GaN or AIN or a layer or other material layer that provides a better match between the substrate and the lattice structure of the subsequent layers. The buffer layer 3 can be carbon-doped GaN or iron-doped GaN. The buffer layer 4 may be composed of self-doped GaN. The optional intermediate layer 6 may consist of AIN or AIGaN with a higher aluminum content than the barrier layer. The barrier layer 7 may be composed of AIGaN or AllnN or AIGalnN. The high-conductivity 2DEG channel, designated layer 5, is formed at the heterogeneity of the buffer and barrier layers. The stress-reducing and surface-passivating layer 8 may be composed of one or more layers of GaN, SiN or other material which are grown in situ together with the III-N semiconductor layers. The formed heterostructure of the semiconductor layers is coated with a protective layer 9, such as S1O2 / AIN, to form the blank 10 shown in FIG. 1b.

The blank 10 is placed in the chamber 11 shown in Fig. 4, in which an atmosphere of shielding gas is formed or from which air is extracted. The shielding gas during the use of laser radiation is nitrogen or argon, the gas pressure is one atmosphere or more.

The directional radiation 13 generated by the laser radiation source 12 is directed to the chamber 11. On one wall of the chamber 11 there is a window 14 of material transparent to laser radiation, through which the laser radiation enters the chamber 11. The pulsed energy of the laser radiation can be controlled by an attenuator consisting of a phase-side wavelength plate 15 and reflective thin-film Bruster angle polarizers 16 and 17, which can be replaced by another type of polarizer. Unused laser radiation is directed to the trap 18. Laser radiation is directed to the chamber using mirrors with dielectric coatings 19. The diameter of the laser beam is controlled by a telescope consisting of a scattering lens 20 and a compression lens 21. Telescope control of the beam is not necessary. The beam is focused by the lens 22 on the surface of the workpiece 10.

The transparent window 14 for laser radiation may be made of optical glass, fused quartz or other radiation-transparent material suitable for transmitting laser radiation. The window can be coated with dielectric coatings to reduce the reflection of laser radiation from the window surfaces.

Laser radiation is a pulsed laser with a pulse duration of between 15 picoseconds and 200 femtoseconds. The wavelength of the laser radiation is between 1020 nanometers and 330 nanometers, and the repetition rate of the laser pulses is 0.1-1.0 MHz.

The schematic diagram of the method of forming hollow contacts with laser radiation is shown in FIG. 4.

The chamber 11 with the blank 10 therein may be displaced relative to the laser beam 13 to form a depression 23, 24, 25 in the heterostructure of the semiconductor layers. layers, such as a barrier layer 7. The depth of indentation is selected according to the type of electrical contact formed by laser micromachining, and can be varied by selecting the energy density of the laser radiation at the surface to be treated, the overlap of the spot spots of the laser radiation, and the number of repetitions. The width of the indentation can be varied by selecting the energy density of the laser radiation at the surface to be machined, the overlap of the laser beam spots, the number of repetitions of the process, and the method of displacing the chamber 11 with the workpiece 10 with respect to the laser beam 13. For example, a channel 500 nanometers deep and 0.01 millimeters wide can be formed using laser radiation with a wavelength of 515 nanometers, a pulse duration of 300 femtoseconds, and laser radiation is focused so that the radiant energy density at the surface of the semiconductor heterostructure is 0.44. / cm², the overlap of the spots of the focused laser beam is 80 percent, the process is repeated 2 times, the process is performed in an atmosphere of 2 atmospheres of nitrogen gas.

Fig. 1a - Fig. 1g shows a method of manufacturing extended ohmic contacts. The laser radiation 13 forms a depression directly through the protective layer 9 for the extended ohmic contact 23. An n-type donor-doped III-N semiconductor layer 26, such as an n-type variable composition InGaN semiconductor, is grown by MOCVD or MOVPE or MBE. , (Fig.1d). The metal layer 27 is evaporated (Fig. 1e). The S1O2 protective layer 9 is removed by selective chemical etching, while removing the excess portion of the donor-doped III-N semiconductor layer 26 and the excess metal 27, (Fig. 1t), thereby forming an extended ohmic contact 28 (Fig. 1g). The metal layer 27 may consist of a Ti or Ni layer, which may be topped with metal layers of Au, Al, Ni, Mo or other suitable properties. The contact may be annealed or annealed using a conventional method for the annealing of ohmic contacts, such as rapid thermal annealing below 900 ° C under a nitrogen atmosphere.

Fig. 2a-Fig. 2e shows a method of manufacturing recessed ohms and recessed Schottky contacts.

The heterostructure of the semiconductor layers (Fig. 2a) consists of a substrate 1, a nucleation layer 2, a buffer layer 3, a buffer layer 4, a 2D electron gas layer 5, an optional intermediate layer 6, a barrier layer 7, an optional stress-relieving and surface passivating layer 8, is covered with a SiCh / AIN protective layer 9, (Fig.2b).

A recess is formed by laser radiation for the recessed ohmic contact, the recessed Schottky contact, 24 and 25, respectively (Fig.2c). In the wells formed by laser radiation, the metal layer is evaporated, thus forming the contacts of the recessed ohm 29 and Schottky 30, (Fig.2d). Ti or Ni metal is used to evaporate the recessed ohmic contact 29, which may also be layered with metal layers of Au, Al, Ni, Mo or other suitable properties. Ni or Pd or Pt or Ti or other metals of suitable properties or their alloys are used to evaporate the Schottky contact 30. The S1O2 / AIN mask 9 is removed by selective chemical etching (Fig.2e). To improve the electrical conductivity of the ohmic contact, the contact can be disconnected, for example, by rapid thermal annealing in a nitrogen gas environment below 900 ° C.

The recessed contacts and insulating elements can optionally be ohmic contacts, Schottky-type contacts and insulating areas, each of which is given a functional characteristic during production by selecting the parameters of the laser radiation and the corresponding metallic or dielectric fillers. During production, each electronic component is isolated and / or connected to the other components according to a given diagram.

FIG. Figure 3 shows the structure of a semiconductor device with an insulating channel 31 of an extended ohmic 28, a submerged ohmic 29, a submerged Schottky 30 type contact. , close to the boundary with the barrier layer 7. The HEMT transistor uses one recessed Schottky contact (gate electrode G) 30 and two incremental ohmic contacts 28 (source electrode S and junction electrode D) or one recessed Schottky contact 30 (G) and two recessed ohmic contacts 29 (S, D) or one recessed Schottky contact 30 (G) and one incremented 28 (S or D) and recessed 29 (D or S) ohmic contacts. The number and type of contacts in one component may be different from those shown in FIG. 3.

FIG. Fig. 5a shows the ohmic contacts made in the proposed way and their TLM characteristics as a function of the resistance between the electrodes (Fig. 5b). This is the dependence of the total resistance, R, of the distance between the electrodes connected by a high-conductivity 2D electron gas channel connected by two ohmic contacts, d.

The two types of ohmic contacts were made on the same chip, and only in the proposed contacts were the laser additionally formed ring-shaped areas, which are visible in the sample photograph of Fig. 5a. These ring-shaped wells were augmented with an n-type variable InGaN semiconductor, then coated with a Ti / Al / Ni / Au alloy, and finally annealed by rapid thermal annealing in a nitrogen atmosphere at about 850 ° C, along with conventionally formed non-deepened ohmic contacts.

The line with solid triangles shows the TLM characteristic of a specimen with conventionally fabricated non-recessed ohmic contacts for which the contact resistance R is determined._c = 5.1 Qxmm. The line with solid squares and the line with circles show the characteristics of TLM in two separate specimens with the proposed ohmic contacts with contact resistance R_c= 1.8 Qxmm and R_c = 1.0 Ωχιίίπί, respectively. The proposed contact resistance of newly manufactured conductive electrical contacts is 2-5 times lower than the resistance of conventional non-recessed contacts.

FIG. 6a shows an electrical circuit for interconnecting a diode (32), a transistor (33), an inductor (34), a resistor (35), an input contact (36), an output contact (37), a control contact (38) in a proposed manner. Fig. 6b).