Method for manufacturing semiconductor device

Method for manufacturing semiconductor device

<p>[0001] The present invention relates to a method for manufacturing a semiconductor device, and to a technique for separating an element forming layer containing a semiconductor element from a substrate used at the time of manufacture.</p><p>In the present invention, a semiconductor device to be fabricated includes a semiconductor element capable of functioning by utilizing the characteristics of a semiconductor, and a device in general functioning using a plurality of semiconductor elements.</p><p>Examples of the semiconductor element include transistors such as MOS transistors and thin film transistors, diodes, and MOS capacitors. Further, the semiconductor device includes an integrated circuit including a plurality of semiconductor elements, a device including a plurality of integrated circuits, or a device including an integrated circuit and other elements. The integrated circuit includes, for example, a CPU, a memory circuit such as a ROM or RAM, and the like.</p><p>Devices including a plurality of integrated circuits and devices including integrated circuits and other elements include, for example, a substrate for a liquid crystal module, a liquid crystal module and liquid crystal display using the module substrate, a substrate for an EL (electroluminescence) module; EL modules and EL display devices using this module substrate, electronic devices using liquid crystal modules or EL modules as display means, IC chips capable of wireless communication with antennas, electronic tags equipped with such IC chips, IC cards, etc. are included. .</p>

<p>A technology has been developed to fabricate an integrated circuit with a semiconductor element such as a thin film transistor (TFT) on a substrate of a glass substrate or a quartz substrate, and then transfer the integrated circuit from the substrate used for manufacturing to the plastic film substrate. In order to transfer the integrated circuit to another substrate, first, a process of separating the integrated circuit from the substrate used for manufacturing is required. For this reason, a technique for peeling the integrated circuit from the substrate has been developed.</p><p>For example, Patent Document 1 describes a peeling technique using the following laser ablation. A separation layer made of amorphous silicon or the like is provided on the substrate, and a layer to be peeled made of a thin film element is provided on the separation layer, and the layer to be peeled is adhered to the transfer member with an adhesive layer. By ablating the separation layer by irradiation with a laser beam, peeling is generated in the separation layer.</p><p>In addition, Patent Document 2 describes a technique for peeling by a physical force such as a human hand. In Patent Document 2, a metal layer is formed between the substrate and the oxide layer, and the layer to be peeled is separated from the substrate by using a weak bond between the oxide layer and the metal layer to cause peeling at the interface between the oxide layer and the metal layer. are doing</p><p>It is known that when peeling occurs, an electric charge is generated on the surface of the layer separated into two, and it is easy to charge. This phenomenon is called peeling charging. Since the surfaces of the two layers are close to each other at the moment when peeling occurs, capacitance is formed between these surfaces. As the separation proceeds, the capacitance decreases with an increase in the distance between the two layers, but since the amount of electric charge generated by the separation charging does not change, the potential at the surface of the layer increases in inverse proportion to the capacitance. When the potential on the surface of the peeled layer increases, the electric charge charged on the surface of the layer may cause a discharge toward the inside of the layer.</p><p>Therefore, when the object to be peeled is an integrated circuit, the semiconductor film, the insulating film, the conductive film, etc. are melted and destroyed by the heat generated by the discharge, and the semiconductor element may not function. In addition, even if the semiconductor element can operate without being damaged by appearance, the semiconductor or insulator deteriorates due to the influence of a high potential applied, and the semiconductor element does not exhibit desired characteristics. there is Therefore, when discharge by static electricity occurs, there is a risk that the semiconductor element may be destroyed or the integrated circuit itself using the semiconductor element may not operate normally due to the influence of deterioration of characteristics.</p><p>Destruction of semiconductor elements and the like under the influence of electrostatic discharge (hereinafter referred to as "ESD") is called electrostatic destruction. Electrostatic breakdown is one of the causes of significantly lowering the yield. Conventionally, as a method for avoiding electrostatic destruction, there are a method of preventing the occurrence of discharge due to static electricity, and a method of suppressing damage to a semiconductor element due to discharge even when discharge due to static electricity occurs. As the former, there is known a method in which an ionizer is installed in a semiconductor manufacturing apparatus and the generated static electricity is removed. A representative example of the latter is a method of manufacturing a protection circuit together with a semiconductor device, and the protection circuit prevents a high potential generated by discharge from being applied to the semiconductor device.</p><p>*Even if static electricity is generated, there is no static breakdown unless it is discharged. Discharge tends to occur when the potential difference between two objects is large. Therefore, the ionizer is a device for the purpose of supplying positive ions and negative ions to the air serving as a discharge path so that a large potential difference does not occur between objects as the discharge increases. However, since discharge by peeling charging is an instantaneous event when the two layers are separated, the discharge by the ionizer may not be timely.</p><p>In addition, in the case of providing a protection circuit, when the electric charge of the discharge passes through the protection circuit, since the protection circuit functions, the destruction of the semiconductor element can be avoided. However, in peeling charging, since the surfaces of the two separated layers are charged, the path of the discharge does not necessarily pass through the protection circuit. Therefore, with respect to peeling charging, prevention of electrostatic destruction by the protective circuit is not sufficient.</p><p>For example, Patent Document 3 describes a method for preventing discharge due to peeling charging (refer to the claims, page 9, lines 42 to 48). A conductive film is formed on a substrate, and a laminate including a semiconductor element and the like is formed thereon. By causing peeling at the interface between the substrate and the conductive film and diffusing the electric charge generated at the time of peeling into the conductive film, destruction of the semiconductor element and deterioration of properties due to charging are avoided.</p><p>However, in the peeling method of patent document 3, an electrically conductive film remains in the lower part of a laminated body. Depending on the purpose of use of the laminate, an electrically conductive film becomes an obstacle, and the presence of an electrically conductive film may not fulfill the intended purpose of use. In such a case, in the peeling method of patent document 3, it is necessary to remove an electrically conductive film.</p><p>[Patent Document 1] Japanese Patent Application Laid-Open No. (Hei) 10-125931</p><p>[Patent Document 2] Japanese Patent Application Laid-Open No. 2003-174153</p><p>[Patent Document 3] Japanese Patent Laid-Open No. 2005-79395</p>

<solutionproblem><p>One of the problems of the present invention is to avoid destruction of semiconductor elements and deterioration of characteristics due to charges generated by peeling. In addition, although patent document 3 is limited to the structure in which the lower surface of the semiconductor element after peeling is a conductive film, in this invention, it makes it another subject to make it possible to select an insulating material with high resistance for the surface on the side of the semiconductor element after peeling.</p></solutionproblem><meansproblemsolution><p>In order to solve the above-mentioned problem, this invention has a means by which the electric charge charged by peeling does not discharge to the inside of either of the two separated layers. Specifically, the method for manufacturing a semiconductor device according to the present invention is characterized in that, when the element-forming layer including the semiconductor element is separated from the substrate, the surface formed by separating the element-forming layer is wetted with a liquid.</p><p>Further, in the present invention, in order to separate the element forming layer from the substrate by applying a force to the element forming layer or the like, it is preferable to form the release layer so that peeling occurs easily by applying force. In another method of manufacturing a semiconductor device according to the present invention, a release layer is formed on a substrate, an element-forming layer containing a semiconductor element is formed on the release layer, and a force is applied to thereby remove the separation at the interface between the release layer and the element-forming layer. It is characterized in that the element-forming layer is separated from the substrate while the surface appearing by the peeling is wetted or moistened with a liquid.</p><p>The location where peeling occurs may be not only the interface between the peeling layer and the element forming layer, but also the interface between the peeling layer and the substrate or the inside of the peeling layer. </p><p>In order to wet (including moistening) the surface appearing by peeling with a liquid, it is good to supply liquid to the surface which appears gradually by peeling. One of the methods of supplying the liquid is a method of dripping or pouring the liquid. As another method, there is a method of spraying the liquid in the form of mist or vapor. As another method, there is a method of separating the element-forming layer from the substrate while immersing it in a liquid. As another method, there is a method in which a liquid holding means such as a sponge or cloth containing a liquid is placed in a gap formed by peeling, and the liquid is discharged from the liquid holding means while separating the element forming layer.</p><p>As the liquid for wetting the element-forming layer or the like, a liquid that does not alter the materials constituting the element-forming layer, the release layer and the substrate, or a liquid that does not react with these materials to form a product is preferable. This is because there is a risk that the reaction product contaminates the semiconductor device, and a step of cleaning the reaction product is required. As the liquid, it is preferable to select a liquid that does not function as an etchant for the element forming layer, the release layer and the substrate.</p><p>Pure water can be used as a liquid used in the manufacturing method of the semiconductor device of this invention. Further, as the liquid, an aqueous solution having a specific resistance lower than that of pure water can be used. In other words, an aqueous solution in which a substance is dissolved in water as a medium may be used. The properties of the aqueous solution may be any of acidity, alkalinity, and neutrality. For example, an aqueous solution in which an acid or a base is dissolved, an aqueous solution in which a salt (the salt may be either an acidic salt, an alkaline salt, or a normal salt) can be used.</p><p>A substance that dissolves in water is preferably a molecule that becomes a gas at room temperature (25°C) and atmospheric pressure. Such substances are, for example, carbon dioxide or hydrogen chloride. Also, when the substance is a salt, a salt that functions as a surfactant is preferred. This is because, by dissolving the surfactant in water, the noodles can be easily wetted.</p><p>In addition, the liquid used in the method of manufacturing a semiconductor device of the present invention is a mixed solution of water and a volatile liquid, and preferably contains at least 0.1% of water. As a volatile liquid, organic solvents, such as ethanol and acetone, can be used.</p><p>In addition, the technique of the present invention is not limited to a method of manufacturing a semiconductor device, but can be applied to a method of manufacturing a structure including a step of separating a structure in which one or a plurality of layers are laminated from a substrate. That is, the present invention relates to a method of manufacturing a structure for separating a structure layer including one or a plurality of layers from a substrate, characterized in that the surface formed by separating the structure layer from the substrate is wetted with a liquid. Also in manufacturing a structure, it is preferable to provide a peeling layer between a board|substrate and a structure layer like the semiconductor device which concerns on this invention.</p></meansproblemsolution><effectiveness><p>Discharge is a phenomenon in which current flows instantaneously for a high potential difference in a place where no current normally flows, such as in an insulator or semiconductor. By wetting or moistening the surface shown by peeling, the electrical resistance of the surface can be lowered. As a result of the decrease of the electrical resistance, since the electric charge generated by the peeling charging is diffused to the wet surface, it can be avoided that the potential of the surface shown by the peeling increases as the discharge is generated. That is, according to the present invention, discharge due to peeling charging can be eliminated.</p><p>Since discharge due to peeling charging does not occur, according to the present invention, in the method for manufacturing a semiconductor device including the step of separating the substrate and the element forming layer, the yield can be improved. In addition, since deterioration of the characteristics of the semiconductor element due to electrostatic breakdown can be eliminated, the present invention can improve the reliability of the semiconductor device.</p><p>In addition, by the method of the present invention, since it is possible not to discharge the electric charge generated by peeling in either of the inside of the two separated layers, even if the lower surface of the element forming layer is an insulating material, it is included in the element forming layer. It can be avoided that the semiconductor element used is destroyed by static electricity generated by peeling charging, and that the characteristics of the semiconductor element are deteriorated.</p></effectiveness>

<p>EMBODIMENT OF THE INVENTION Hereinafter, embodiment of this invention is described, referring drawings. In addition, the same code|symbol is attached|subjected to the same element, and the overlapping description is abbreviate|omitted. In addition, it is easy for those skilled in the art to understand that this invention can be implemented in many other forms, and that the form and detail can be variously changed without deviating from the meaning and scope of this invention. Therefore, this invention is limited to the description of this embodiment and an Example, and is not interpreted.</p><p>When static electricity is generated on the surface of a layer (including a substrate) made of a high-resistance material such as an insulator, if there is no path for the charge to diffuse, the charge stays at the generated location. In this state, when the separation proceeds and the potential due to the generated electric charge increases, a discharge occurs toward a path through which electricity easily passes, for example, the inside of the element formation layer.</p><p>Therefore, the method for manufacturing a semiconductor device according to the present invention is characterized in that it has means for not charging the electric charge generated by the peeling. Specifically, when separating the element forming layer from the substrate, a liquid is supplied between the two separated layers (one of the layers may be a substrate) to wet the surface that appears by separating the element forming layer, or let it do A method of manufacturing a semiconductor device of the present invention will be described with reference to FIGS. 1 to 7 .</p><p>As shown in FIG. 1 , an element forming layer 11 is formed on a substrate 10 . The release layer 12 is formed on the substrate 10 so that the element formation layer 11 can be easily separated from the substrate 10 , and the element formation layer 11 is formed on the release layer 12 .</p><p>At least one semiconductor element is formed in the element forming layer 11 . For example, an integrated circuit is formed in the element forming layer 11 using a thin film transistor, a diode, a resistor, a capacitor, or the like. The element forming layer 11 is one of the components of a semiconductor device.</p><p>The release layer 12 can be formed of, for example, a metal or an alloy. Metals are tungsten (W), molybdenum (Mo), titanium (Ti), tantalum (Ta), niobium (Nb), nickel (Ni), cobalt (Co), zirconium (Zr), zinc (Zn), ruthenium (Ru) ), rhodium (Rh), palladium (Pd), osmium (Os), or iridium (Ir). The alloy is an alloy of a plurality of metal elements selected from these metal elements, such as an alloy of tungsten and molybdenum. These metal films and alloy films can be formed by sputtering. In addition, the thickness of the metal film or alloy film used as the peeling layer 12 should just be 20 nm or more and 100 nm or less in the range.</p><p>The surface of the metal film or alloy film formed as the peeling layer 12 is oxidized so that peeling occurs preferentially between the element forming layer 11 and the peeling layer 12 . The oxidation method includes thermal oxidation, oxygen or N<sb>2</sb>There are a method of treating the surface with O plasma and a method of treating the surface with a solution with strong oxidizing power such as ozone water. As another method, when the element formation layer 11 is formed, there is a method in which an oxide is formed at the interface between the element formation layer 11 and the release layer 12 . For example, when silicon oxide is formed by sputtering, when silicon oxide is deposited on the surface of a metal film or an alloy film, the surface can be oxidized. Further, instead of oxidizing the metal film or the alloy film, nitridation may be performed by plasma treatment or heat treatment.</p><p>In addition, the peeling layer 12 can also be formed in a single layer or a plurality of layers. For example, a multilayer film of an insulating film made of an inorganic material such as silicon oxide or silicon oxynitride and a metal film (or alloy film) may be used so that no peeling occurs at the interface between the substrate 10 and the release layer 12 .</p><p>The substrate 10 is a substrate used to form the element forming layer 11 and the release layer 12, and is preferably a rigid body. The substrate 10 is, for example, a glass substrate, a quartz substrate, a metal substrate, a stainless substrate, or a silicon wafer having an insulating layer formed on the surface thereof.</p><p>After forming the element formation layer 11, as shown in FIG. 2, the support base material 13 is fixed on the element formation layer 11. As shown in FIG. The support base 13 is a member for facilitating handling of the element forming layer 11 after being separated from the substrate 10 . It is also a member for facilitating the operation of deforming the element formation layer 11 when the element formation layer 11 is separated from the substrate 10 .</p><p>The support base 13 is not a member of the semiconductor device, but when removed during the manufacturing process of the semiconductor device, a base material that can be separated without damaging the element formation layer 11 is used for the support base 13 . Moreover, it is preferable that the support base material 13 is flexible so that the element formation layer 11 can be deform|transformed. Therefore, what is necessary is just to use the peeling film which can peel by weak force for the support base material 13. As shown in FIG.</p><p>Moreover, when using the support base material 13 as a member of a semiconductor device, the plastic substrate etc. which consist of polycarbonate, polyarylate, polyether sulfone, etc. are mentioned. In addition, in the configuration of FIG. 2 by using a flexible film (consisting of polypropylene, polyester, vinyl, polyvinyl fluoride, vinyl chloride, etc.) as the supporting substrate 13, in the configuration of FIG. 2, the element forming layer is made of an adhesive such as an epoxy resin. Adhere to (11).</p><p>As shown in FIG. 3 , peeling is generated at the interface between the element formation layer 11 and the peeling layer 12 . In order to cause delamination, a mechanical external force (the so-called force according to the laws of classical mechanics) is applied to this interface. For example, as shown in FIG. 3 , the element-formed layer 11 is deformed by bending the supporting substrate 13 to cause peeling at the end of the interface between the element-formed layer 11 and the release layer 12 . can In addition, since it is difficult to bend the release layer 12 because the substrate 10 is a rigid body, the element forming layer 11 is deformed, but if it is easy to deform the release layer 12, the release layer 12 is You may deform|transform, and you may deform|transform both the element forming layer 11 and the peeling layer 12.</p><p>In order to apply a mechanical external force capable of deforming the element forming layer 11, it is possible to apply a mechanical force that can be deformed by a human hand, or it is also possible to hold the supporting substrate 13 with a holding tool such as tweezers. In addition, the element forming layer 11 can be deformed also by winding the support base material 13 on a roller etc. as mentioned later.</p><p>As shown in Fig. 3, when peeling occurs at the end of the interface between the element-forming layer 11 and the release layer 12, the liquid 15 is supplied to the gap formed by the peeling, and the element-forming layer 11 formed by the peeling is supplied. ) and the upper surface of the release layer 12 are wetted. Moreover, when the board|substrate 10 is turned down and the support base material 13 is turned up, a lower surface refers to the surface on the side of the board|substrate 10 of a layer, and an upper surface refers to the surface by the side of the support base 13 of a layer.</p><p>In the present invention, as shown in Fig. 4, while peeling the element-forming layer 11, peeling is performed so that the lower surface of the element-forming layer 11 and the upper surface of the release layer 12 are wetted with the liquid 15, which appear gradually by the peeling. A liquid 15 is supplied to the tip portion of the </p><p>In the present invention, pure water may be used as the liquid 15 . Although the specific resistance of pure water is very high at 1 MΩ·cm or more, when it comes into contact with the element forming layer 11 or the release layer 12, the pure water is mixed with the impure water, and the electrical resistance is lowered. Therefore, by immersing the lower surface of the element-forming layer 11 or the upper surface of the release layer 12 shown by the peeling with pure water, the charge generated by the peeling is diffused on the lower surface of the element-forming layer 11 or the upper surface of the release layer 12 . can do it Therefore, even if the surface of the element formation layer 11 or the release layer 12 is a material with high resistance, discharge toward the inside of the element formation layer 11 and the release layer 12 is avoided.</p><p>That is, in the present invention, by supplying the liquid 15 to the portion where the peeling occurs in the future, the peeling occurs, and at the same time, the surface shown by the peeling is wetted with the liquid, and the electrical resistance of the surface is lowered. Therefore, in the present invention, since it is possible to diffuse the charge due to the peeling charge at the moment when the peeling occurs, the discharge caused by the static electricity can be eliminated.</p><p>As the liquid 15, an aqueous solution having a specific resistance lower than that of pure water can be used. The properties of the aqueous solution may be any of acidity, alkalinity, and neutrality. For example, an aqueous solution in which an acid or a base is dissolved, an aqueous solution in which a salt (the salt may be either an acidic salt, an alkaline salt, or a normal salt) can be used. As an aqueous solution that can be used as the liquid 15, specifically, carbon dioxide (CO<sb>2</sb>), aqueous solution of hydrogen chloride (HCl) (hydrochloric acid), aqueous solution of tetramethylammonium hydroxide, ammonium chloride (NH<sb>4</sb>Cl) aqueous solution, etc. are mentioned. </p><p>The liquid 15 is preferably an aqueous solution in which molecules that become gases at room temperature (25° C.) and atmospheric pressure are dissolved in water, such as an aqueous solution of carbon dioxide or an aqueous solution of hydrogen chloride. This is because, when the liquid 15 is dried, molecules dissolved with water become gas and do not remain. Moreover, when using the aqueous solution which melt|dissolved the salt, the salt which functions as a surfactant is preferable. By dissolving the surfactant, it can be easily wetted with the liquid 15 .</p><p>Also, a mixed solution of water and a volatile liquid may be used as the liquid 15 . The drying treatment can be omitted by including a volatile liquid in the liquid 15 . When the volatile liquid contains at least 0.1% of water, the effect of diffusion of electric charge by the liquid 15, that is, the antistatic effect, can be obtained. Commercially available high-purity organic solvents such as ethanol and acetone also contain products containing water as impure water at a concentration of 0.1% or more. It is possible to use it as a mixed solution of a liquid. In addition, in order to take advantage of the advantages of the volatile liquid, the concentration of the volatile liquid is preferably 30% or more. Therefore, an organic solvent with low purity, such as denatured ethanol, which is widely used as an organic solvent, can be used as a mixed solution of water and a volatile liquid of the present invention without adjusting the concentration.</p><p>As shown in FIG. 5 , when the separation of the element formation layer 11 and the release layer 12 is completed, the substrate 10 is separated from the element formation layer 11 together with the release layer 12 . As shown in FIG. 6, the 1st flexible board|substrate 18 is fixed to the lower surface of the element formation layer 11 with an adhesive agent. Next, the supporting base material 13 is peeled off from the upper surface of the element formation layer 11 . When peeling the supporting base material 13, if there is a risk that the element-forming layer 11 may be destroyed by peeling charging, similarly to supplying the liquid 15 between the element-forming layer 11 and the peeling layer 12 . , the liquid 15 may be supplied between the element forming layer 11 and the supporting substrate 13 .</p><p>Next, as shown in FIG. 7 , the second flexible substrate 19 is fixed to the upper surface of the element formation layer 11 . What is necessary is just to provide the 2nd flexible board|substrate 19 as needed. By the above manufacturing method, the flexible semiconductor device which has the element formation layer 11 shown in FIG. 7 can be formed.</p><p>The first flexible substrate 18 and the second flexible substrate 19 are substrates that can be bent or bent. For these flexible substrates 18 and 19, for example, a plastic substrate made of polycarbonate, polyarylate, polyethersulfone, or the like can be used. Moreover, the film which consists of organic compounds, such as polyethylene terephthalate, polypropylene, polyester, vinyl, polyvinyl fluoride, and vinyl chloride, can be used.</p><p>In order to fix the first flexible substrate 18 and the second flexible substrate 19 to the element forming layer 11, the adhesiveness is developed by heating or irradiating visible light or ultraviolet light, etc. Use the adhesive to bond it. For example, a resin such as a thermoplastic resin or a photopolymerizable resin may be used as an adhesive.</p><p>In the present invention, the liquid 15 is gradually supplied to the tip portion of the peeling surrounded by the chain line in FIG. 4 (the portion 17 surrounded by the chain line in FIG. 4 ). In other words, the liquid may be supplied to the surface that appears gradually by peeling. One of the methods of supplying the liquid is a method of dripping or pouring the liquid 15 into a gap caused by peeling by an injection means such as a nozzle or a dropper. In this case, the supply of the liquid 15 may be performed continuously from the start to the end of the peeling, or may be performed intermittently. In addition, only the initial stage of peeling as shown in Fig. 3 is poured or dripped with the liquid 15, and as the peeling progresses, the supplied liquid 15 is capillary action to the tip of the peeling. (The portion 17 surrounded by the chain line in FIG. 4) can be spread evenly.</p><p>As another method of supplying the liquid 15, there is also a method of spraying the liquid 15 in the form of a mist by a spraying means such as a spray nozzle or a sprayer. Also in this method, spraying of the liquid 15 may be performed continuously, may be performed intermittently, and may be performed only in the initial stage of peeling while peeling is advancing. In addition, when pure water is used as the liquid 15, it can be ejected as water vapor.</p><p>As another method of supplying the liquid 15, there is a method of using a liquid holding medium capable of absorbing a liquid such as a sponge or cloth and releasing the liquid by applying an external force. </p><p>In addition, another method of supplying the liquid 15 is a method of separating the element forming layer 11 from the substrate 10 while putting the liquid 15 in a container and immersing the substrate 10 in the liquid 15 . have. In this case, by immersing the location where the peeling proceeds in the liquid 15, the liquid 15 can be evenly spread over the tip portion of the peeling (the portion 17 surrounded by chain lines in FIG. 4).</p><p>Here, a method of supplying the liquid 15 using the liquid holding medium will be described using the cross-sectional views shown in Figs. 1 to 4, 8 and 9 . In addition, another supply method will be described in detail in the following examples.</p><p>1 and 2 are carried out, the release layer 12 and the element formation layer 11 are formed on the board|substrate 10, and the support base material 13 is fixed on the element formation layer 11. As shown in FIG. As shown in FIG. 3, by bending the support base material 13, peeling is generate|occur|produced in the interface of the element formation layer 11 and the peeling layer 12. As shown in FIG.</p><p>Next, as shown in Fig. 8, the liquid holding means 21 containing the liquid 15 is inserted into the gap formed by the peeling. Further, after inserting the liquid holding means 21 into the gap, the liquid 15 may be supplied by a dropper, a nozzle, or the like, and the liquid 15 may be contained in the liquid holding means 21 . As the liquid holding means 21, a sponge or cloth, etc. having a function of absorbing liquid may be used.</p><p>As for the size of the liquid holding means 21, in Fig. 8, the length in the direction perpendicular to the paper is made longer than the length of one side of the substrate 10 in this direction, so that the end of the liquid holding means 21 is the substrate ( 10) It is desirable not to be placed on the top. </p><p>Moreover, a mechanical force is applied to the interface of the element formation layer 11 and the peeling layer 12 through the support base material 13, and peeling advances. As an example of a method of applying a mechanical force, a method of winding the element forming layer 11 using the roller 22 will be described. As shown in FIG. 9 , the element formation layer 11 is separated from the substrate 10 by rolling the roller 22 from the support substrate 13 and winding the element formation layer 11 for each support substrate 13 . can do.</p><p>When the roller 22 passes over the liquid holding means 21 , the liquid 15 contained in the liquid holding means 21 is pushed out by the weight of the roller 22 , and is peeled off forward. It comes into contact with this liquid (15). That is, the upper surface of the release layer 12 and the lower surface of the element forming layer 11 that appear as the roller 22 rotates can be gradually wetted with the liquid 15 . Therefore, at the moment of peeling, the electric charge generated by peeling is diffused by the liquid 15, and charging can be prevented.</p><p>Although the manufacturing method of the semiconductor device of this invention was demonstrated as an example when the peeling layer 12 is a metal film or an alloy film, this invention is not limited to this example. The peeling layer applies mechanical force, and any material capable of peeling the element forming layer may be used.</p><p>Although the case where peeling occurs at the interface of the element formation layer 11 and the peeling layer 12 is demonstrated as an example in the manufacturing method of the semiconductor device of this invention, the part where peeling occurs is not limited to this. For example, as the release layer 12 on the substrate 10, an amorphous silicon film containing hydrogen is formed by plasma CVD using silane gas as a raw material. The substrate 10 is irradiated with a laser in an ultraviolet region such as an excimer laser to release hydrogen from the amorphous silicon film. As a result, the adhesiveness between the amorphous silicon film and the substrate 10 decreases or the amorphous silicon film itself becomes weak, so that at the interface between the release layer 12 and the substrate 10 or inside the release layer 12 peeling may occur.</p><p>In addition, by forming the release layer 12 as a multilayer of different materials, it is also possible to cause peeling at the interface between the layers constituting the release layer. For example, as the release layer 12, a tungsten film is formed by sputtering, and a silicon dioxide film is formed on the tungsten film by sputtering. When the silicon dioxide film is deposited, an oxide of tungsten is generated at the interface between the tungsten film and the silicon dioxide film. Therefore, since the bonding at the interface between the tungsten film and the silicon dioxide film is weak, by applying a force to the release layer 12, it is possible to cause peeling between the tungsten film and the silicon dioxide film.</p><p><u>Example 1</u></p><p>In this embodiment, a method of manufacturing a semiconductor device capable of input/output of data in a non-contact manner to which the present invention is applied will be described. In this embodiment, an integrated circuit functioning as an IC tag is formed in the element forming layer for wireless communication with a signal of 13.56 MHz. Hereinafter, this embodiment will be described using FIGS. 10 to 20 and FIGS. 25 to 28 .</p><p>As shown in FIG. 10 , a release layer 101 was formed on the substrate 100 , and an integrated circuit was formed on the release layer 101 . Hereinafter, the manufacturing method of the peeling layer 101 and the element formation layer 102 is demonstrated using FIGS.</p><p>As the substrate 100, a glass substrate manufactured by Asahi Glass Co., Ltd. (thickness 0.7 mm, trade name AN100) cut into a 5-inch square was used. As shown in FIG. 25 , the release layer 101 is formed of silicon oxynitride (SiO).<sb>x</sb>N<sb>y</sb>, x&lt;y), a multilayer structure of the layer 101a and the tungsten layer 101b was obtained. The silicon oxynitride layer 101a is deposited with SiH as a source gas by a parallel plate plasma CVD apparatus.<sb>4</sb>, N<sb>2</sb>O was used and formed to a thickness of 200 nm. The tungsten layer 101b was formed to have a thickness of 50 nm using a tungsten target as a sputtering device. N<sb>2</sb>O plasma was generated, the surface of the tungsten layer 101b was plasma-treated, and the surface was oxidized to form tungsten oxide. By this plasma treatment, peeling occurs with tungsten oxide, which is the interface between the peeling layer 101 and the element forming layer 102 . In addition, the silicon oxynitride layer 101a under the release layer 101 is formed by sputtering the tungsten layer 101b to prevent impurity from diffusing from the substrate 100 (eg, a glass substrate). barrier layer for An insulating film made of another inorganic material such as silicon oxide or silicon nitride can be used for the barrier layer.</p><p>As shown in FIG. 26 , an insulating film 103 serving as an underlying insulating layer of a semiconductor element such as a TFT of the element forming layer 102 was formed on the release layer 101 . The insulating film 103 is silicon oxynitride (SiO)<sb>x</sb>N<sb>y</sb>, x&lt;y) layer 103a and silicon oxynitride (SiO)<sb>x</sb>N<sb>y</sb>, x&gt;y) the layer 103b was laminated. The first silicon oxynitride layer 103a is a parallel plate type plasma CVD apparatus, and the source gas is SiH.<sb>4</sb>, N<sb>2</sb>O, NH<sb>3</sb>, H<sb>2</sb>was used to form a film. The silicon oxynitride layer 103b of the second layer was formed of SiH by a parallel plate type plasma CVD apparatus.<sb>4</sb>, N<sb>2</sb>O was used as a raw material gas to form a film. </p><p>As shown in Fig. 27, an integrated circuit is formed on the insulating film 103 by semiconductor elements such as TFTs and capacitors. 27 is a cross-sectional view of the integrated circuit, showing only the CMOS circuit comprising the n-channel TFT 104 and the p-channel TFT 105. In FIG. Further, 48 integrated circuits (8 rows x 6 columns) arranged in a matrix were simultaneously formed on one substrate 100 .</p><p>In order to perform wireless communication, an antenna 106 connected to an integrated circuit (TFTs 104 and 105) is formed. First, before forming the antenna 106, an insulating film 107 was formed to cover the integrated circuits (TFTs 104 and 105). In this embodiment, the insulating film 107 is formed of photosensitive polyimide, and an opening for connecting the antenna 106 is formed in the insulating film 107 .</p><p>On the insulating film 107, silver (Ag) paste was formed in a desired shape by a printing method, and an antenna 106 was installed. In addition, of the 48 integrated circuits formed on the same substrate 100, an antenna 106 was provided in half, and a stack of the integrated circuit and the antenna was formed. In the other half, instead of the antenna 106, bumps for connecting an externally attached antenna were formed with silver paste. Further, by forming a conductive film such as aluminum by sputtering and processing it into a desired shape by etching, the antenna 106 and bumps can be provided.</p><p>Finally, as shown in FIG. 28, the resin layer 108 for sealing was formed by covering the antenna 106. As shown in FIG. An epoxy resin layer having a thickness of 30 µm was formed on the resin layer 108 . From the above, on the substrate 100, a structure comprising the release layer 101 and the element formation layer 102 is formed.</p><p>A plurality of integrated circuits are formed on the device forming layer 102 on the substrate 100 . When the element forming layer 102 is separated from the substrate 100 , as shown in FIG. 11 , grooves 110 are formed in advance in the element forming layer 102 so that the integrated circuit can be divided one by one. The groove 110 is formed so as to surround each integrated circuit in the element forming layer 102 . In this embodiment, the groove 110 was formed by irradiating UV laser light with a wavelength of 266 nm and an output of 2W.</p><p>By forming the groove 110 in the element formation layer 102 , a slight peeling occurs at the interface between the element formation layer 102 and the release layer 101 exposed by the groove 110 , and the element formation layer along the groove 110 . (102) is in the floating state. </p><p>When peeling, the heat peeling film used as a support base material is prepared. The heat release film 111 is a film made of polyethylene terephthalate having a thickness of 100 µm, and a thermosetting resin layer having a thickness of 50 µm is formed on one surface of the film. The thermosetting resin layer functions as an adhesive layer before curing with heat, and the surface thereof is protected with a separate film 112 . In order to fix the heat release film 111 to the element formation layer 102 with the thermosetting resin layer, as shown in FIG. 12, a part of the separator film 112 was removed. Therefore, the separator film 112 was irradiated with UV laser light, a cut-out area such as the groove 110 formed in the element-forming layer 102 was inserted, and the separator film 112 inside the cut-off location was peeled off.</p><p>A heat release film 111 is adhered to the upper surface of the element forming layer 102 . As shown in FIG. 13 , a heat release film 111 was adhered to the element forming layer 102 using a commercially available laminating apparatus provided with a pair of rollers 114 . The heat release film 111 is adhere|attached by the thermosetting resin layer (adhesive layer) to the part (part subject to peeling) which the element formation layer 102 finally comprises a semiconductor device. On the other hand, since the separate film 112 remains in the part (part used as peeling object) which does not comprise a semiconductor device, the heat peeling film 111 does not adhere.</p><p>Peeling occurs around the groove 110 , and the element-forming layer 102 is in a state in which it rises slightly from the release layer 101 . When the gap for dripping the liquid is narrow between the element formation layer 102 and the release layer 101, the gap is enlarged. In this embodiment, plastic tweezers are inserted into the peeled lower surface of the element forming layer 102 , and a gap 115 between the upper surface of the release layer 101 and the lower surface of the element forming layer 102 as shown in FIG. 14 . ) was created.</p><p>As shown in FIG. 15 , the liquid 116 is dropped into the gap 115 between the release layer 101 and the element formation layer 102 . In this embodiment, the liquid 116 was dropped with the dropper 117 . The liquid 116 was injected in a sufficient amount to evenly spread the gap 115 . In the subsequent steps, the liquid 116 was not supplied.</p><p>In addition, as the liquid 116, pure water, CO<sb>2</sb>Pure water (hereinafter, "CO<sb>2</sb>water"), pure water in which hydrogen chloride was dissolved (hereinafter referred to as "HCl water"), and ethanol were used. Also, CO<sb>2</sb>As the water channel, an aqueous solution having a specific resistance of 0.2 MΩ·cm was used. As HCl water, an aqueous solution having a hydrogen chloride concentration of 180 ppm was used. Ethanol was used as it was, without adjusting the concentration of commercially available ethanol having a concentration of 99.5% and water concentration of 0.5%.</p><p>As shown in Fig. 16, a non-conductive roller 118 is rolled on the heat release film 111, and the forming layer 102 is wound on a roller 118 for each heat release film 111, so that the element forming layer ( 102) was separated from the substrate 100. By rotating the roller 118, the element forming layer 102 is gradually peeled off from the release layer 101, and the liquid 116 supplied in the state of FIG. (119; the tip of the peel). Therefore, the lower surface of the element-forming layer 102 and the upper surface of the release layer 101, which appear by peeling, were able to be wetted with the liquid 116 at the moment when the peeling occurred.</p><p>Next, as shown in FIG. 17, the heat peeling film 111 and the element formation layer 102 which were closely_contact|adhered to the roller 118 were peeled off. As shown in FIG. 18, the element formation layer 102 with the heat peeling film 111 separated from the board|substrate 100 can be obtained. Pure water or CO in liquid 116<sb>2</sb>When water and HCl water were used, the heat release film 111 and the element forming layer 102 were dried by an air blow apparatus. </p><p>When peeling the heat peeling film 111 from the roller 118 (refer FIG. 17), you may supply the liquid 116 between the roller 118 and the heat peeling film 111. In the case of this embodiment, it has been confirmed that the element formation layer 102 can be peeled off from the roller 118 without destroying the element formation layer 102 without injecting the liquid 116 . The reason that the element-forming layer 102 is not destroyed is considered to be one of the reasons that in the element-forming layer 102, there is an insulating film 107 made of an epoxy resin having a thickness of 30 µm between the integrated circuit and the heat release film 111. do.</p><p>The element forming layer 102 was observed with an optical microscope in the state in which the heat release film 111 was attached (the state in Fig. 18), and the electric power was destroyed by the discharge (the semiconductor layer, the insulating film, the conductive film, etc., due to the heat generated by the discharge) melting destruction) was confirmed. The objective of the observation of the optical microscope is to confirm that no visible destruction has occurred in the semiconductor element. In this embodiment, all 48 integrated circuits formed on one substrate 100 were observed with an optical microscope.</p><p>Pure water, CO in liquid 116<sb>2</sb>Although water, HCl water, and ethanol were used, as a result of observation under an optical microscope, no power breakdown occurred in any liquid 116 or the integrated circuit. On the other hand, when the element forming layer 102 is separated from the substrate 100 without supplying the liquid 116 , there is an integrated circuit in which power is destroyed.</p><p>[Table 1]</p><p>light microscopy results</p><p><table><tgroup xmlns="http://www.oasis-open.org/tables/exchange/1.0" cols="5"><colspec colnum="1" align="center" colname="col1" colwidth="2418" /><colspec colnum="2" align="center" colname="col2" colwidth="2303" /><colspec colnum="3" align="center" colname="col3" colwidth="2360" /><colspec colnum="4" align="center" colname="col4" colwidth="2360" /><colspec colnum="5" align="center" colname="col5" colwidth="2360" /><tbody><row><entry align="center" colname="col1">type of liquid</entry><entry align="center" colname="col2">number of observed substrates</entry><entry align="center" colname="col3">Total number of integrated circuits observed</entry><entry align="center" colname="col4">Total number of destroyed integrated circuits</entry><entry align="center" colname="col5">Percentage of Integrated Circuits Destroyed</entry></row><row><entry align="center" colname="col1">pure</entry><entry align="center" colname="col2">3</entry><entry align="center" colname="col3">144</entry><entry align="center" colname="col4">0</entry><entry align="center" colname="col5">0.0%</entry></row><row><entry align="center" colname="col1">CO<sb>2</sb>Number</entry><entry align="center" colname="col2">3</entry><entry align="center" colname="col3">144</entry><entry align="center" colname="col4">0</entry><entry align="center" colname="col5">0.0%</entry></row><row><entry align="center" colname="col1">HCl water</entry><entry align="center" colname="col2">1</entry><entry align="center" colname="col3">48</entry><entry align="center" colname="col4">0</entry><entry align="center" colname="col5">0.0%</entry></row><row><entry align="center" colname="col1">does not exist</entry><entry align="center" colname="col2">4</entry><entry align="center" colname="col3">192</entry><entry align="center" colname="col4">59</entry><entry align="center" colname="col5">30.7%</entry></row></tbody></tgroup></table></p><p>Table 1 summarizes the observation results with an optical microscope. Table 1 shows the observation results of the substrate (sample) to which the liquid 116 was supplied and the substrate (sample) to which the liquid 116 was not supplied. Liquid 116 includes pure water, CO<sb>2</sb>Water and HCl water were used. As shown in Table 1, in the case where the liquid 116 was not supplied, in 30% or more of the integrated circuits, apparent destruction such as disconnection or melting of the film was observed. Further, there was no regularity in the distribution (positions formed on the substrate) of the fractured integrated circuit on the substrate. For this reason, there is a risk that a defective product may be overlooked in an arbitrary inspection with respect to a substrate to which a liquid is not supplied. However, testing the entire number is burdensome in terms of cost and tact time. By implementing this invention, since the electric power breakdown by peeling discharge can be eliminated, the burden of an inspection can be reduced.</p><p>When the state of FIG. 18 is obtained, the laminate film 121 as a flexible substrate is adhered to the lower surface of the element forming layer 102 . After the adhesiveness of the resin layer is removed by heating the heat release film 111 to harden the resin layer, the heat release film 111 is peeled off from the upper surface of the element forming layer 102 . The device forming layer 102 together with the laminate film 121 is divided for each integrated circuit. Another laminate film 122 is adhered to the upper surface of the divided element forming layer 102 . By heating while pressurized, as shown in FIG. 19 , a semiconductor device having the element forming layer 102 sealed with two laminate films 121 and 122 is produced.</p><p>In addition, instead of the laminate film 122, the film 123 with the antenna formed thereon was fixed to the element forming layer 102 including the circuit not connected to the antenna among the integrated circuits, as shown in FIG. 20, thereby manufacturing a semiconductor device. . An anisotropic conductive adhesive is used for bonding the film 123 and the element forming layer 102 so that the bump of the integrated circuit and the terminal of the antenna on the film 123 are electrically connected.</p><p>The semiconductor device shown in Figs. 19 and 20 can be used as an inlet incorporated in a non-contact type IC tag or the like. Further, the semiconductor device according to the present invention is not only an intermediate product such as an inlet, but also an IC card having an inlet as shown in Figs. , including end products such as ID labels and IC tags.</p><p>It was checked whether a predetermined operation was performed by wirelessly inputting a signal to the semiconductor device shown in FIGS. 19 and 20 completed through the manufacturing method of the present embodiment. It was confirmed that all the semiconductor devices observed with the optical microscope (semiconductor devices including the integrated circuits observed with the optical microscope) operate. Based on the results of the optical microscope observation in Table 1, it is thought that the discharge of static electricity generated by peeling could be prevented by separating the element forming layer from the substrate while supplying the liquid. That is, it has been found that, by the practice of the present invention, it is possible to prevent the semiconductor elements included in the semiconductor device from being destroyed and the characteristics from being deteriorated by the charge generated by the peeling.</p><p>Further, in the structure of this embodiment, the lower surface of the element forming layer 102, which appears by peeling, is made of tungsten oxide or silicon oxynitride, and is a material with high resistance. destruction can be prevented. Therefore, by applying the present invention, the material for forming the lower surface of the element forming layer 102 is not limited to the conductive material, and can be formed of an insulating material. As described above, according to the present invention, since it is possible to prevent electric charges generated by peeling from being discharged to either inside of the two separated layers, even if the lower surface of the element forming layer is an insulating material, the semiconductor element contained in the element forming layer. It is possible to prevent destruction due to static electricity caused by temporary peeling and deterioration of characteristics of the semiconductor element.</p><p>Further, by bending the element formation layer 102, the element formation layer 102 is separated from the substrate. By bending the element formation layer 102, as a result of an external force applied to the element formation layer 102, it may crack or crack. It can be seen that, when the element-forming layer 102 is separated from the substrate 100 while supplying a liquid as in the present invention, destruction (cracks or cracks) due to deformation of the element-forming layer 102 hardly occurs.</p><p>[Table 2]</p><p>light microscopy results</p><p><table><tgroup xmlns="http://www.oasis-open.org/tables/exchange/1.0" cols="5"><colspec colnum="1" align="center" colname="col1" colwidth="1924" /><colspec colnum="2" align="center" colname="col2" colwidth="1887" /><colspec colnum="3" align="center" colname="col3" colwidth="2133" /><colspec colnum="4" align="center" colname="col4" colwidth="2777" /><colspec colnum="5" align="center" colname="col5" colwidth="3080" /><tbody><row><entry align="center" colname="col1">type of liquid</entry><entry align="center" colname="col2">number of observed substrates</entry><entry align="center" colname="col3">Total number of observed element-forming layers</entry><entry align="center" colname="col4">Total number of element-forming layers in which cracks, etc. were observed</entry><entry align="center" colname="col5">Ratio of the element-forming layer in which cracking, etc. occurred</entry></row><row><entry align="center" colname="col1">CO<sb>2</sb>Number</entry><entry align="center" colname="col2">2</entry><entry align="center" colname="col3">96</entry><entry align="center" colname="col4">4</entry><entry align="center" colname="col5">4.2%</entry></row><row><entry align="center" colname="col1">does not exist</entry><entry align="center" colname="col2">2</entry><entry align="center" colname="col3">96</entry><entry align="center" colname="col4">53</entry><entry align="center" colname="col5">55.2%</entry></row></tbody></tgroup></table></p><p>Table 2 shows the results of observing the presence or absence of cracks or cracks in the element forming layer 102 under an optical microscope in the state of FIG. 18 . Table 2 shows CO as liquid 116<sb>2</sb>The observation result by the optical microscope of the board|substrate (sample) using water and the board|substrate (sample) to which the liquid 116 was not supplied is shown. In the element-forming layer that was peeled off without supplying a liquid, cracks or cracks occurred in about half of the cases, but CO<sb>2</sb>It turns out that by injecting water, the occurrence of cracks and cracks can be reduced to about 4%.</p><p>Therefore, by separating the element-forming layer from the substrate while supplying a liquid, it is possible to prevent the destruction of semiconductor elements or deterioration of properties due to static electricity caused by delamination, while also preventing the occurrence of destruction (cracks or cracks) of the element-forming layer due to deformation. may be suppressed.</p><p><u>Example 2</u></p><p>In this embodiment, a method of supplying the liquid 116 in a method different from that of Embodiment 1 will be described. In this embodiment, a method of spraying the liquid 116 in the form of a mist will be described, and descriptions of parts common to the first embodiment will be omitted.</p><p>As in Example 1, the steps described with reference to Figs. 10 to 13 are performed. Next, in the first embodiment, plastic tweezers are inserted into the peeled lower surface of the element forming layer 102, and between the upper surface of the release layer 101 and the lower surface of the element forming layer 102, as shown in FIG. A gap 115 was created. In this embodiment, this step is unnecessary.</p><p>Next, as in the first embodiment, the roller 118 is rolled from the top of the heat release film 111 to peel the element forming layer 102 together with the heat release film 111 from the release layer 101 . When rolling the roller 118, as shown in FIG. 21, from the side where the roller 118 is rolled toward the gap between the element forming layer 102 and the release layer 101, the liquid 116 is discharged from the spraying means 130. was ejected in the form of a mist. The liquid 116 is sprayed so that the part where peeling occurs by rotating the roller 118 may become wet.</p><p>As shown in FIG. 22, while rotating the roller 118, the liquid 116 is sprayed from the spraying means 130 so that the part where peeling occurs is wet. By the roller 118 , the element forming layer 102 together with the heat release film 111 is separated from the substrate 100 . Next, the laminate of the heat release film 111 and the element forming layer 102 is peeled off from the roller 118, and as shown in FIG. 18, the element is fixed to the heat release film 111 and divided for each semiconductor device. A cambium layer 102 is obtained.</p><p>In the method of this embodiment, as liquid 116, CO at the same concentration as in Example 1<sb>2</sb>Using water, the process up to FIG. 18 was performed. The same process was performed using the same means as in Example 1, except that the liquid supply method was different. In addition, in this embodiment, CO as a nebulizer<sb>2</sb>water was ejected. </p><p>In this embodiment, as in Example 1, in the state of FIG. 18, the element forming layer 102 was observed with an optical microscope to examine whether there was power breakdown due to discharge. Optical microscopy was performed for all integrated circuits formed using the same substrate 100 . Also in this embodiment, there was no integrated circuit in which power was destroyed.</p><p>As in Example 1, the semiconductor device of FIG. 19 or 20 was fabricated using the element forming layer 102 observed with an optical microscope, and a signal was wirelessly input to examine whether the semiconductor device performs a predetermined operation. It was confirmed that all semiconductor devices work. Therefore, it was confirmed that the method of this example also prevents discharge of static electricity generated by peeling by separating the element forming layer from the substrate while supplying a liquid as in Example 1.</p><p>In this embodiment, since the step of expanding the gap 115 between the upper surface of the release layer 101 and the lower surface of the element formation layer 102 shown in FIG. 14 is unnecessary in this embodiment, the separation process is more automated than the method of the first embodiment. Easy. </p><p><u>Example 3</u></p><p>In this embodiment, a method of supplying the liquid 116 in a method different from that of Embodiments 1 and 2 will be described. The parts common to Example 1 are abbreviate|omitted description. In this embodiment, a method of supplying a liquid by separating the element-forming layer 102 from the substrate while being immersed in the liquid 116 will be described.</p><p>As in the first embodiment, the steps described with reference to Figs. 10 to 14 are performed. Next, as shown in FIG. 23, the container 140 in which the liquid 116 was put is prepared. In the container 140 , the substrate 100 , the release layer 101 , and the device forming layer 102 are immersed in the liquid 116 . The substrate 100 is placed in the container 140 so that the heat release film 111 side faces upward.</p><p>In this state, as shown in FIG. 24 , the roller 118 is rolled from the top of the heat release film 111 to peel the element forming layer 102 together with the heat release film 111 from the release layer 101 . . Since the release layer 101 is peeled off from the element formation layer 102 in the liquid 116 , the surface on which the peeling occurs can always be immersed in the liquid 116 . It is preferable to adjust the amount of the liquid 116 in the container 140 so that the heat release film 111 is not immersed in the liquid 116 . This is because, when the heat release film 111 is in contact with the liquid 116 , it becomes difficult to adhere the heat release film 111 to the roller 118 .</p><p>Next, the laminated body of the heat release film 111 and the element formation layer 102 is peeled off from the roller 118, and as shown in FIG. 18, it is fixed to the heat release film 111, and the element formation layer 102 divided|segmented. ) to get </p><p>In the method of this embodiment, as liquid 116, CO at the same concentration as in Example 1<sb>2</sb>Using water, the process up to FIG. 18 was performed. The same process was performed using the same means as in Example 1, except that the liquid supply method was different.</p><p>Also in this embodiment, as in Example 1, in the state of Fig. 18, the element forming layer 102 was observed with an optical microscope to confirm the presence or absence of power breakdown due to discharge. Optical microscope observation was performed for all integrated circuits formed on one substrate 100 . Also in this embodiment, there is no integrated circuit that is destroying power.</p><p>In the element forming layer 102 observed with an optical microscope, as in Example 1, the semiconductor device of FIG. 19 or 20 was fabricated, and the operation of the semiconductor device was checked by wirelessly inputting a signal. It was confirmed that all semiconductor devices work. Therefore, it was confirmed that the method of the present embodiment can also prevent discharge of static electricity generated by peeling by separating the element forming layer from the substrate while supplying a liquid, as in the first embodiment.</p><p>In addition, in this embodiment, attention is required to the depth of the liquid 116 in the container 140 . It is desirable that the depth of the liquid 116 be approximately the same height as the thickness of the substrate 100 . When the liquid 116 is deep, the upper surface of the heat release film 111 is wet, and there is a fear that the heat release film 111 does not adhere to the roller 118 . Conversely, if the liquid 116 is extremely shallow, there is a risk that the liquid 116 may not penetrate into the gap between the release layer 101 and the element formation layer 102 . In the state of FIG. 23 , when the substrate 100 is placed in the container 140 , the liquid 116 entering the gap between the release layer 101 and the element forming layer 102 can be visually confirmed. By checking whether the liquid 116 has penetrated, the amount of the liquid 116 is adjusted.</p><p>As described above in Examples 1 to 3, by separating the element-forming layer from the substrate while supplying a liquid, it is possible to prevent the destruction of the semiconductor element or deterioration of characteristics due to static electricity caused by the peeling. In addition, it is possible to reduce the occurrence of cracks and cracks such as cracks caused by the application of mechanical external force in the element formation layer.</p><p><u>Example 4</u></p><p>29, a configuration example of a semiconductor device having an integrated circuit capable of wireless communication with an antenna in this embodiment will be described. </p><p>29A is a diagram showing a configuration example of an ID label as a semiconductor device according to the present invention. A plurality of ID labels 161 are formed on the label sheet 160 (separate paper). Each ID label 161 contains an inlet 162 having an antenna and an integrated circuit capable of wireless communication. The ID label 161 is housed in a box 163 . In the ID label 161, information about the product or service (brand name, brand, trademark, trademark holder, seller, manufacturer, etc.) is described. On the other hand, an ID number unique to the product (or type of product) is stored in the integrated circuit of the built-in inlet 162 . In the integrated circuit of the inlet 162, there is enormous information on the surface of the ID label 161 that cannot be specified on the label, for example, the product's origin, sales location, quality, raw material, efficacy, use, quantity, shape, price, production. Method, usage method, production time, usage time, shelf life, handling instructions, intellectual property information about the product, etc. are memorized.</p><p>29B is a diagram showing a configuration example of the ID tag 165. As shown in FIG. In the ID tag 165, an inlet 162 is incorporated in a tag made of paper or plastic. By providing a product with an ID tag 165 capable of wireless communication, product management is facilitated. For example, when a product is stolen, the culprit can be quickly identified by traversing the path of the product. In this way, by providing the ID tag, it is possible to distribute so-called products excellent in traceability.</p><p>29C is a diagram showing a configuration example of the ID card 166. As shown in FIG. The ID card 166 is configured by sandwiching an inlet 162 (not shown) between two plastic cards. The ID card 166 includes all types of cards such as cash cards, credit cards, prepaid cards, electronic tickets, electronic money, telephone cards, and membership cards.</p><p>29D is a diagram showing a configuration example of a semiconductor device in which an integrated circuit is embedded in paper, and shows an example in which the present invention is configured as a bearer bond 167. As shown in FIG. The bearer bond 167 has an inlet 162 built-in. The bearer bond 167 includes, but is not limited to, stamps, tickets such as car tickets or admission tickets, admission tickets, gift certificates, book tickets, stationery tickets, beer coupons, rice gift certificates, various gift certificates, and various service coupons. .</p><p><u>Example 5</u></p><p>* With reference to Fig. 30, in this embodiment, a configuration example of an active matrix type liquid crystal module as a semiconductor device of the present invention will be described. Fig. 30A is a front view of the liquid crystal module, and Fig. 30B is a cross-sectional view taken along line AA' in Fig. 30A.</p><p>Reference numeral 200 denotes a first flexible substrate, 201 denoted by a dotted line denotes a signal line driving circuit, 202 denotes a pixel unit, and 203 denotes a scan line driving circuit. On the first flexible substrate 200 , a pixel portion 202 made of a thin film transistor or the like, a signal line driver circuit 201 , and a scan line driver circuit 203 are formed in an element formation layer 190 . By fixing the element forming layer 190 to the first flexible substrate 200 with an adhesive, a substrate for a liquid crystal module is constituted. A substrate for a liquid crystal module was produced by the method described in the above-described embodiment and Examples 1-4.</p><p>Next, the cross-sectional structure of the element formation layer 190 will be described with reference to FIG. 30B. In the element forming layer 190, a semiconductor element is formed on the underlying film 209 made of an insulating film. The signal line driver circuit 201 has a CMOS circuit in which an n-channel type thin film transistor 211 and a p-channel type thin film transistor 212 are combined. The pixel unit 202 includes a switching thin film transistor 213 and a capacitor 214 . The switching thin film transistor 213 is covered with an interlayer insulating film 221 . A pixel electrode 222 is formed on the interlayer insulating layer 221 . The pixel electrode 222 is electrically connected to the switching thin film transistor 213 .</p><p>A protective layer 223 is formed to cover the wiring of the switching thin film transistor 213 , the pixel electrode 222 , the n-channel thin film transistor 211 , and the wiring of the p-channel thin film transistor 212 . By the protective film 223 , it is possible to prevent intrusion of impurities into the active layer of the thin film transistor, the interlayer insulating film 221 , and the like. An alignment layer 224 is formed on the passivation layer 223 . In addition, the alignment film 224 is formed as needed.</p><p>The wiring 210 in the element forming layer 190 is a wiring for transmitting signals input to the signal line driving circuit 201 and the scan line driving circuit 203 , and the FPC 208 (flexible printed circuit) serving as an external input terminal is provided. connected Further, the liquid crystal module of the present invention includes both a form in which only the FPC 208 is mounted and a form in which both the FPC 208 and a PWB (printed wiring board) are mounted.</p><p>The liquid crystal module of this embodiment includes a substrate for a liquid crystal module having a first flexible substrate 200 and an element forming layer 190 , a counter substrate based on the second flexible substrate 230 , a sealing material 205 , and , having a liquid crystal 240 and an FPC 208 (flexible printed circuit), and can be bent. </p><p>As the opposite substrate, a color filter 231 , a black matrix 232 (BM), a counter electrode 233 , and an alignment layer 234 are formed on the second flexible substrate 230 . The color filter 231 may be installed on the side of the first flexible substrate 200 . In addition, by providing the counter electrode 233 on the element forming layer 190 of the first flexible substrate 200 , an IPS type liquid crystal module may be configured.</p><p>Opposite the first flexible substrate 200 , the second flexible substrate 230 is fixed by the sealing material 205 , and between the first flexible substrate 200 and the second flexible substrate 230 . Thus, the liquid crystal 240 is sealed by the sealing material 205 . </p><p>Although the example in which the signal line driver circuit 201 and the scan line driver circuit 203 are formed on the element formation layer 190 is described in this embodiment, only the pixel portion 202 is formed on the element formation layer 190, and the signal line driver circuit ( 201), the scan line driver circuit 203 may be constituted of an IC chip using a silicon wafer and electrically connected to the pixel portion 202 on the first flexible substrate 200 by the COG method or the TAB method. have.</p><p><u>Example 6</u></p><p>31, a configuration example of an active matrix type EL module as a semiconductor device of the present invention in this embodiment will be described. Fig. 31A is a front view of the EL module, and Fig. 31B is a cross-sectional view taken along line AA' in Fig. 31A.</p><p>The EL module shown in FIG. 31 can be bent, and a sealing material 305 formed between the first flexible substrate 301 and the second flexible substrate 306 in which the transistor and the light emitting element formed in the element forming layer are formed. It is sealed by </p><p>On the first flexible substrate 301, an element forming layer 300 including a pixel portion 302, a signal line driver circuit 303 and a scan line driver circuit 304 is fixed with an adhesive, so that the EL module substrate is formed. is composed A substrate for an EL module was produced by the method described in the above-described embodiment, Examples 1-4.</p><p>The EL module is constituted by sealing the substrate for the EL module by the sealing material 305 and the second flexible substrate 306 . In the EL module of this embodiment, a filler 307 is filled in a space enclosed by the substrate for the EL module, the sealing material 305 and the second flexible substrate 306 . As the filler 307, in addition to an inert gas such as nitrogen or argon, an ultraviolet curable resin or a thermosetting resin can be used, and polyvinyl chloride, acrylic, polyimide, epoxy resin, silicone resin, polyvinyl butyral, or ethylene vinylene can be used. Acetate may be used.</p><p>Hereinafter, the structure of the element forming layer 300 will be described. The pixel portion 302, the signal line driver circuit 303, and the scan line driver circuit 304 include a plurality of thin film transistors. In FIG. 31B, the thin film transistor 308 included in the signal line driver circuit 303 and the pixel portion 302 are Only the thin film transistor 310 included in the is shown. The pixel unit 302 includes a light emitting device 311 , and the light emitting device 311 is electrically connected to the thin film transistor 310 .</p><p>The lead wiring 314 is a wiring for supplying a signal or power to a circuit in the element forming layer 300 from the outside. The catch-up wiring 314 is connected to the connection terminal 316 having a two-layer structure through the catch-up wiring 315b and the catch-up wiring 315a. The connection terminal 316 is electrically connected to a terminal of the flexible printed circuit 318 (FPC) through the anisotropic conductive film 319 .</p><p><u>Example 7</u></p><p>The semiconductor device of the present invention includes an electronic device including the liquid crystal module described in Embodiment 5 or the EL module of Embodiment 6 in a display unit. Hereinafter, the liquid crystal module and the EL module are collectively referred to as a "display module". Examples of such electronic devices include computer monitors, television devices (referred to simply as televisions or television receivers), digital cameras, digital video cameras, cellular phone devices (simply also referred to as mobile phones or mobile phones) and PDA (Personal Digital Assistants), etc. of portable information terminals, notebook computers, car audio systems, navigation systems, digital music players, portable DVD players, portable game machines, and business game machines. A specific example thereof will be described with reference to FIG. 32 .</p><p>32A and 32B show a television apparatus. In the structure of the built-in display module, only the pixel portion is formed in the element forming layer, the scan line side driver circuit and the signal line side driver circuit are mounted on a substrate, the pixel portion and the scan line side driver circuit are formed in the element forming layer, and the signal The line side driver circuit may have a structure in which a separate driver IC is mounted on a substrate, or a structure in which a pixel portion, a signal line side driver circuit, and a scan line side driver circuit are formed in an element forming layer. The display module of the present invention can employ either structure. In order to mount the scan line side driver circuit and the signal line driver circuit on a substrate, a mounting method such as a TAB method or a COG method is used.</p><p>The television device is an external circuit other than the display module. On the input side of the video signal, a video signal amplifying circuit amplifies the video signal among the signals received by the tuner, and the signal output therefrom corresponds to each color of red, green, and blue. It has a video signal processing circuit for converting a single color signal, a control circuit for converting the video signal into input specifications of a driver IC, and the like. The control circuit outputs signals to the scanning line side and the signal line side, respectively. In the case of digital driving, a signal dividing circuit is provided on the side of the signal line, and a plurality of input digital signals are divided and supplied.</p><p>Among the signals received by the tuner, the audio signal is sent to the audio signal amplifier circuit, and the output is supplied to the speaker through the audio signal processing circuit. The control circuit receives control information of a receiving station (reception frequency) and volume from an input unit, and sends a signal to a tuner or an audio signal processing circuit.</p><p>32A and 32B, in the television apparatus, a display module is incorporated in a case. A main screen 403 is formed by the display module, and a speaker unit 409, an operation switch, and the like are provided as other auxiliary equipment. In this way, the television apparatus can be completed.</p><p>As shown in FIG. 32A , the liquid crystal module 402 is incorporated in the case 401 . In addition to reception of general television broadcasting by the receiver 405, one-way (sender to receiver) or bi-directional (between sender and receiver, or between receivers) by connecting to a communication network by wire or wireless via the modem 404 It is also possible to communicate information between each other. The television apparatus can be operated by a switch built into the case or by a separate remote control operator 406 . A display unit 407 for displaying information to be output can also be provided in this remote control device.</p><p>In addition, the television apparatus can also have a configuration in which, in addition to the main screen 403, the sub screen 408 is formed as a second display panel, and a configuration for displaying channels, volume, and the like is added. In this configuration, the main screen 403 may be formed of an EL module having an excellent viewing angle, and the sub screen 408 may be formed of a liquid crystal module capable of displaying with low power consumption. Moreover, in order to give priority to reduction in power consumption, the main screen 403 may be formed of a liquid crystal module, the sub screen 408 may be formed of an EL module, and the sub screen 408 may be flickering.</p><p>Fig. 32B shows, for example, a television device having a large display unit of 20 to 80 inches, including a case 410, a keyboard unit 412 serving as an operation unit, a display unit 411, a speaker unit 413, and the like. A display module is used for the display unit 411 . Since a curved display module is used for the display unit 411 in Fig. 32B, the display unit 411 is a curved television device. As described above, by using the flexible display module, the shape of the display unit 411 is not limited to a flat surface, and television devices having various shapes can be manufactured.</p><p>According to the present invention, since the yield of the display module can be improved, cost reduction can also be achieved. Accordingly, the television apparatus using the present invention can be manufactured at low cost even with a large-screen display unit.</p><p>Of course, the display module of the present invention is not limited to a television device, and can be used as a monitor of a personal computer, information display panel at railway stations or airports, etc. can be applied to the intended use. </p><p>The display module of the present invention can be applied to the display unit of various portable devices such as mobile phones and digital cameras. Fig. 32C shows a configuration example of an electronic book as an example of a portable device. The electronic book includes a main body 421 , display units 422 and 423 , a storage medium 424 , an operation switch 425 , an antenna 426 , and the like. By using a flexible display module for the display unit 4 (22), it is possible to reduce the weight of the portable device.</p><p><u>Example 8</u></p><p>In this embodiment, by separating the element-forming layer from the substrate while supplying a liquid, it will be described that the force causing peeling can be weakened and that the occurrence of damage such as cracks or cracks in the element-forming layer can be avoided. </p><p>First, a method for producing a sample subjected to a peel test will be described. </p><p>33 is a view for explaining a laminate structure of a sample subjected to a peel test. A glass substrate 500 was prepared. As the glass substrate 500, alkali-free glass (trade name: AN-100) manufactured by Asahi Glass Company was used. The thickness is 0.7mm and the size is 100mm×120mm.</p><p>On a glass substrate 500, with a plasma CVD apparatus, silicon oxynitride (SiO<sb>x</sb>N<sb>y</sb>, x&gt;y) A film 501 with a thickness of 100 nm was formed. As a process gas for forming the silicon oxynitride film 501, SiH<sb>4</sb> and N<sb>2</sb>O was used. On the silicon oxynitride film 501, a tungsten film 502 having a thickness of 50 nm was formed by a sputtering apparatus. Tungsten was used as a target, and argon gas was used as a discharge gas. The tungsten film 502 functions as a release layer.</p><p>On the tungsten film 502, a laminated film of an insulating film and a semiconductor film, which is regarded as an element forming layer, is formed. First, silicon oxynitride (SiO<sb>x</sb>N<sb>y</sb>, x&gt;y) A film 503 having a thickness of 600 nm was formed. SiH as a process gas for forming the silicon oxynitride film 503<sb>4</sb> and N<sb>2</sb>O was used. Further, before depositing the silicon oxynitride film 503 on the tungsten film 502, N in the chamber for forming the silicon oxynitride film 503<sb>2</sb>By supplying only O gas, N<sb>2</sb>The surface of the tungsten film 502 was oxidized by excitation of the O gas to form a plasma, thereby forming a tungsten oxide. This plasma treatment is a treatment for causing peeling at the interface between the tungsten film 502 and the silicon oxynitride film 503 in preference to other interfaces.</p><p>SiH as process gas<sb>4</sb>, H<sb>2</sb>, NH<sb>3</sb> and N<sb>2</sb>Using O, in a plasma CVD apparatus, silicon oxynitride (SiO<sb>x</sb>N<sb>y</sb>, x&lt;y) A film 504 was formed on the silicon oxynitride film 503 . SiH as process gas<sb>4</sb> and N<sb>2</sb>Using O, in a plasma CVD apparatus, silicon oxynitride (SiO<sb>x</sb>N<sb>y</sb>, x&gt;y) a film 505 was formed on the silicon oxynitride film 504 . SiH as process gas<sb>4</sb> and H<sb>2</sb>Using a plasma CVD apparatus, an amorphous silicon film 506 having a thickness of 66 nm was formed on the silicon oxynitride film 505 . The silicon oxynitride film 504, the silicon oxynitride film 505, and the amorphous silicon film 506 were formed in the same chamber as the plasma CVD apparatus, changed to a process gas supplied into the chamber, and these films were continuously formed. .</p><p>Next, SiH as a process gas<sb>4</sb>, H<sb>2</sb>, N<sb>2</sb>, NH<sb>3</sb> and N<sb>2</sb>Using O, a 100 nm thick silicon oxynitride (SiO<sb>x</sb>N<sb>y</sb>, x&lt;y) A film 507 was formed on the amorphous silicon film 506 . SiH as process gas<sb>4</sb> and N<sb>2</sb>Using O, with a plasma CVD apparatus, silicon oxynitride (SiO2) with a thickness of 600 nm<sb>x</sb>N<sb>y</sb>, x&gt;y) a film 508 was formed on the silicon oxynitride film 507 . </p><p>Next, UV laser light was irradiated from the glass substrate 500 to cut the glass substrate 500 on which the films 501 to 508 were formed, so that the size of the sample was made into a thin paper shape of 20 mm x 100 mm. Fig. 34 shows a plan view of a sample processed into a thin paper shape. Next, in order to create a trigger for peeling, a groove 510 reaching the tungsten film 502 was formed in the sample by irradiation with UV laser light, as shown in FIG. 34 . By forming the grooves 510 , peeling occurs between the silicon oxynitride film 503 and the tungsten film 502 . In the above method, a sample to be subjected to the peel test was prepared.</p><p>Next, the method of the peel test will be described. A heat release tape having a width of about 20 mm was prepared. As the heat release tape, an elegrip tape (variety FA1250) manufactured by Denki Chemical Co., Ltd. was used. The combined thickness of the base material and the pressure-sensitive adhesive layer of this heat release tape is 150 µm, and the thickness of the pressure-sensitive adhesive layer is 50 µm. The base material of the heat release tape is made of PET (polyethylene terephthalate).</p><p>A heat release tape was adhered to the grooved sample. The heat release tape is adhered to the silicon oxynitride film 508 side. By peeling off the heat release tape, the laminated film composed of the films 508 to 503 can be peeled off from the substrate 500 .</p><p>The heat release tape was pulled, and the tensile force required for the laminated film composed of the films 508 to 503 to peel from the tungsten film 502 was measured. For the peel test, a small tabletop tester (EZ-TEST EZ-S-50N) manufactured by Shimadzu Corporation was used. As the peel test method, an adhesive tape/adhesive sheet test method conforming to JIS Z0237 of the Japanese Industrial Standards (JIS) was used. In the case of peeling while supplying pure water to the sample and in the case of peeling without supplying pure water, the tensile force was measured, respectively. In addition, supply of pure water was performed by dripping the pure water with the dropper to the peeling part after attaching a sample to the tester.</p><p>35 is a graph showing a peel test result. The vertical axis of Fig. 35 is the tensile force applied to the heated release tape, and the horizontal axis is the stroke. The stroke represents the displacement of the point of application of the force. In other words, it is the displacement of the point at which the peeling is taking place.</p><p>From the graph of FIG. 35, it can be seen that when pure water is supplied, the tensile force is 1/2 or less when pure water is not supplied. By this peeling test, it was confirmed that peeling could be performed with a weaker force by supplying pure water.</p><p>In addition, when the peel test was performed without supplying pure water, the graph of FIG. 35 shows a sawtooth profile. The sawtooth profile shows that the peeling proceeds as follows. When peeling is performed without supplying pure water, a stronger force is applied to the action point than when pure water is supplied in order to advance peeling. However, when peeling proceeds, the force rapidly decreases. The peeling proceeds while repeating an increase and a sharp decrease in the force applied to this point of action.</p><p>When the peeled sample was observed without supplying pure water, it was confirmed that cracks had occurred in the location where the tensile force was rapidly reduced. In contrast, no cracks occurred in the sample subjected to the peel test while supplying pure water. As described above, it turned out that cracking can be avoided by peeling while supplying pure water.</p><p>In addition, although pure water is a polar liquid, a peel test was performed while supplying a non-polar liquid whose medium is non-polar as a comparison. For example, as a liquid, hydrofluoroether (HFE) was used. When the peel test was performed while supplying HFE, a greater tensile force was required for peeling than when no liquid was supplied. In the case of benzene, the results were the same as those of HFE.</p><p>The following was found from the above peeling test. By performing peeling while supplying a polar liquid such as pure water, aqueous solution, ethanol, or acetone, discharge due to peeling electrification can be eliminated, the force required for peeling can be reduced, and damage such as cracks to the peeled object occurrence can be avoided.</p>