Light-emitting element light-emitting device display device lighting device and electronic appliance

Light emitting device, light emitting device, display device, lighting device, and electronic device

The present invention relates to an article, method, or method of making. The invention also relates to a process, machine, manufacture, or composition of matter. In particular, one embodiment of the present invention relates to a semiconductor device, a display device, a light emitting device, a power storage device, a driving method thereof, or a manufacturing method thereof. In particular, one embodiment of the present invention relates to a light-emitting element, a display module, a lighting module, a display device, a light-emitting device, an electronic device, and a lighting device containing an organic compound as a light-emitting material.

In recent years, research and development of light emitting devices (organic EL devices) using organic compounds and using electroluminescence (EL) have been actively conducted. In the basic structure of such a light emitting element, an organic compound layer (EL layer) containing a light emitting material is interposed between a pair of electrodes. By applying a voltage to the device, light can be emitted from the luminescent material.

Since this light emitting element is a self-light emitting element, it has advantages, such as high visibility and no backlight, and is considered suitable as a flat panel display element. In addition, a display including a light emitting element can be manufactured as a thin and light display, and it is also a great advantage to have a very fast response speed.

This light emitting element can provide surface light emission, so that a large area element can be easily formed. This characteristic is difficult to obtain by a point light source represented by an incandescent light bulb and an LED, or a linear light source represented by a fluorescent lamp. Therefore, this light emitting element has a good possibility as a surface light source applied to a lighting device and the like.

In the case of such an organic EL device, electrons from the cathode and holes from the anode are injected into the EL layer, and current flows. By recombination of the injected electrons and holes, the organic compound having luminescence is excited to provide luminescence.

The excited state of an organic compound is the singlet excited state (S^*) or triplet excited state (T^*), and emission from a singlet excited state is called fluorescence, and emission from a triplet excited state is called phosphorescence. The statistical generation rate of the excited state in the light emitting device is S^*:T^*= 1:3.

In a compound emitting light from a singlet excited state (hereinafter referred to as a fluorescent substance), at room temperature, generally, emission from a triplet excited state (phosphorescence) is not observed, but only emission from a singlet excited state (fluorescence) is observed. do. Therefore, the theoretical limit of the internal quantum efficiency (ratio of generated photons to injected carriers) of a light emitting device using a fluorescent material is T^*S for^*Based on the ratio of 1:3, it is estimated to be 25%.

On the other hand, in a compound emitting light from the triplet excited state (hereinafter referred to as a phosphorescent compound), light emission from the triplet excited state (phosphorescence) is observed. Since intersystem crossing is easy to occur in phosphorescent compounds, the internal quantum efficiency can theoretically be increased to 100%. That is, a light emitting device using a phosphorescent material may easily have higher luminous efficiency than a light emitting device using a fluorescent material. For this reason, in order to obtain a light emitting device with high efficiency, a light emitting device using a phosphorescent material has been actively developed in recent years.

The white light emitting device disclosed in Patent Document 1 includes a light emitting region containing a plurality of types of light emitting dopants that emit phosphorescence. The device disclosed in Patent Document 2 includes an intermediate layer (charge generating layer) between a fluorescent layer and a phosphorescent layer (that is, this device is a so-called tandem device).

<p><patcit num="0001"><text>Japanese translation of PCT International Application No. 2004-522276</text></patcit><patcit num="0002"><text>Japanese Patent Laid-Open No. 2006-024791</text></patcit></p>

<p>As a multicolor light emitting element typified by a white light emitting element, an element including an intermediate layer (charge generating layer) between a fluorescent layer and a phosphorescent layer has been developed (Patent Document 2), and some of them are put into practical use. In the light emitting device having this structure, short wavelength light is emitted from the fluorescent layer and long wavelength light is emitted from the phosphorescent layer.</p><p>In this structure, fluorescence is used as short-wavelength light having a problem of lifetime, and phosphorescence is used as long-wavelength light. This structure is employed in order to achieve stable characteristics of a multicolor light emitting element, although phosphorescence is less efficient than an element in which long-wavelength light and short-wavelength light are used.</p><p>The multicolor light emitting device having the above-described structure, which prioritizes reliability over performance, is suitable for practical use compared to general light emitting devices that often have problems in lifespan. interfere</p><p>There are several reasons for providing an intermediate layer between the phosphorescent layer and the fluorescent layer in the multicolor device having the above structure. One of the reasons is to suppress quenching of phosphorescence caused by the fluorescent layer.</p><p>In the fluorescent layer, a substance having a condensed aromatic ring (particularly, condensed aromatic hydrocarbon ring) skeleton typified by anthracene is generally used as a host material. Substances having this condensed aromatic ring skeleton often have a relatively low triplet level. Thus, when the fluorescent layer is formed in contact with the phosphorescent layer, the triplet excitation energy generated in the phosphorescent layer moves to the triplet level of the host material in the fluorescent layer and is deactivated. Because triplet excitons have a long lifetime, the diffusion distance of excitons is long, and in addition to the excitation energy generated at the interface between the fluorescent layer and the phosphorescent layer, the excitation energy generated in the phosphorescent layer is deactivated by the host material in the fluorescent layer. . Accordingly, a significant decrease in luminous efficiency occurs.</p><p>The above problem is solved by using a host material with a high triplet excitation energy in the fluorescent layer. However, in this case, the energy is not sufficiently transferred from the host material to the fluorescent dopant because the singlet excitation energy of the host material is higher than the triplet excitation energy. As a result, the luminous efficiency in the fluorescent layer becomes insufficient. In addition, the non-luminescent attenuation of the host material accelerates the deterioration of the properties (especially the lifetime) of the device. If the singlet excitation energy of the host material is higher than necessary, the HOMO-LUMO gap of the host material is wide. This leads to an excessive increase in the driving voltage.</p><p>In view of the above, an object of one embodiment of the present invention is to provide a light emitting device that utilizes fluorescence and phosphorescence and is advantageous for practical use. Another object of one embodiment of the present invention is to provide a light emitting device that uses fluorescence and phosphorescence, and has fewer manufacturing steps because the number of layers to be formed is relatively small, and is advantageous for practical use.</p><p>Another object of one embodiment of the present invention is to provide a light emitting device using fluorescence and phosphorescence and having high luminous efficiency.</p><p>Another object of one embodiment of the present invention is to provide a light emitting device that uses fluorescence and phosphorescence, the number of layers to be formed is relatively small, is advantageous for practical use, and has high luminous efficiency. Another object of one embodiment of the present invention is to provide a novel light emitting device.</p><p>Another object of one embodiment of the present invention is to provide a display module, a lighting module, a light emitting device, a display device, an electronic device, and a lighting device that can be manufactured at low cost by using the light emitting element.</p><p>Another object of one embodiment of the present invention is to provide a display module, a lighting module, a light emitting device, a display device, an electronic device, and a lighting device in which power consumption is reduced by using the light emitting element.</p><p>It is only necessary to achieve at least one of the above-mentioned objects in the present invention.</p>

<p>The above object is to provide a first light-emitting layer 113a including a host material and a fluorescent material, and a second light-emitting layer including two types of organic compounds forming an exciplex and a material capable of converting triplet excitation energy into light emission. It can be achieved by the light emitting device having the stacked structure of (113b). In addition, a light emitting device having an emission spectrum peak at a wavelength side in which the light emitted from the first light emitting layer 113a is shorter than that of the light emitted from the second light emitting layer 113b achieves the above object more efficiently.</p><p>One embodiment of the present invention is a light emitting element including a pair of electrodes and an EL layer interposed between the pair of electrodes. The EL layer includes a first light emitting layer and a second light emitting layer. The emission spectrum of the light emitted from the first emission layer 113a is located on the shorter wavelength side than the emission spectrum of the light emitted from the second emission layer. The first light emitting layer includes at least a fluorescent material and a host material. The second light emitting layer includes at least a material capable of converting triplet excitation energy into light emission , a first organic compound, and a second organic compound. The first organic compound and the second organic compound form an exciplex.</p><p>Another embodiment of the present invention is a light emitting device including a pair of electrodes and an EL layer interposed between the pair of electrodes. The EL layer includes a first light emitting layer and a second light emitting layer stacked in contact with each other. The emission spectrum of the light emitted from the first light emitting layer is located on the shorter wavelength side than the emission spectrum of the light emitted from the second light emitting layer. The first light emitting layer includes at least a fluorescent material and a host material. The second light emitting layer includes at least a material capable of converting triplet excitation energy into light emission, a first organic compound, and a second organic compound. The first organic compound and the second organic compound form an exciplex.</p><p>Another aspect of the present invention is a light emitting device having the above-described structure in which energy moves from the exciplex to the material capable of converting triplet excitation energy into light emission.</p><p>Another embodiment of the present invention has the above-described structure in which the singlet excitation level of the host material is higher than the singlet excitation level of the fluorescent material, and the triplet excitation level of the host material is lower than the triplet excitation level of the fluorescent material. A light emitting device having</p><p>Another embodiment of the present invention is a light emitting device having the above-described structure in which the triplet excitation level of the host material is lower than the triplet excitation level of the first organic compound and the second organic compound.</p><p>Another embodiment of the present invention is a light emitting device having the above-described structure in which the host material has a condensed aromatic ring skeleton.</p><p>Another embodiment of the present invention is a light emitting device having the above-described structure in which the host material has an anthracene skeleton.</p><p>Another embodiment of the present invention is a light emitting device having the above structure, wherein the host material is an organic compound having an anthracene skeleton and the fluorescent material is an organic compound having a pyrene skeleton.</p><p>Another aspect of the present invention is that the second light-emitting layer is the material capable of converting triplet excitation energy into light emission.<i>n</i>(<i>n</i>is an integer greater than or equal to 2) a light emitting device having the above-described structure comprising materials having different emission spectra.</p><p>Another embodiment of the present invention is a light emitting device having the above-described structure in which the second light emitting layer includes an n layer, and the n layer includes a different material capable of converting triplet excitation energy into light emission.</p><p>Another aspect of the present invention is the above-described structure in which the second light-emitting layer includes a first phosphorescent material and a second phosphorescent material having different emission spectra as the material capable of converting triplet excitation energy into light emission. A light emitting device having</p><p>Another aspect of the present invention is that the first phosphorescent material emits light in the red region, the second phosphorescent material emits light in the green region, and the fluorescent material emits light in the blue region. It is a light emitting device having the above-described structure.</p><p>Another aspect of the present invention is that the first phosphorescent material has an emission spectrum peak in the range of 580 nm to 680 nm, the second phosphorescent material has an emission spectrum peak in the range of 500 nm to 560 nm, and the fluorescent material is 400 nm It is a light emitting device having the above-described structure having an emission spectrum peak in the range of ~480 nm.</p><p>In another aspect of the present invention, the second light-emitting layer includes a first phosphorescent layer and a second phosphorescent layer, the first phosphorescent material is included in the first phosphorescent layer, and the second phosphorescent material is the second phosphorescent layer. 2 A light-emitting device having the above-described structure included in the phosphorescent layer.</p><p>Another embodiment of the present invention is a light emitting device having the above-described structure in which a first light emitting layer, a first phosphorescent layer, and a second phosphorescent layer are stacked in this order.</p><p>Another embodiment of the present invention is a light emitting device having the above structure, wherein the first light emitting layer is formed on the anode side of the pair of electrodes, and the second phosphorescent layer is formed on the cathode side of the pair of electrodes.</p><p>Another aspect of the present invention is a light emitting device having the above-described structure, wherein the first phosphorescent material exhibits carrier trapping properties in the first phosphorescent layer.</p><p>Another embodiment of the present invention is a light emitting device having the above-described structure in which the carrier trapping property is an electron trapping property.</p><p>Another embodiment of the present invention is a display module including any of the above-described light emitting elements.</p><p>Another embodiment of the present invention is a lighting module including any of the light-emitting elements described above.</p><p>Another embodiment of the present invention is a light-emitting device including any of the above-described light-emitting elements and a unit for controlling the light-emitting element.</p><p>Another embodiment of the present invention is a display device including any of the above-described light-emitting elements in a display unit and a unit for controlling the light-emitting elements.</p><p>Another embodiment of the present invention is a lighting device including any of the above-described light emitting elements in an illuminating unit and a unit for controlling the light emitting element.</p><p>Another embodiment of the present invention is an electronic device including any of the light-emitting elements described above.</p><p>In addition, the light emitting device in this specification includes an image display device using a light emitting element in this category. In the scope of the light emitting device in the present specification, the light emitting element is provided with a connector such as an anisotropic conductive film or a TCP (tape carrier package) module; A module provided with a printed wiring board at the end of the TCP; and a module in which an integrated circuit (IC) is directly mounted on a light emitting device in a chip on glass (COG) method. Also included in this category are light emitting devices used for lighting fixtures and the like.</p>

<p>In one embodiment of the present invention, it is possible to provide a multicolor light emitting device that uses fluorescence and phosphorescence, has a relatively small number of layers to be formed, and is advantageous for practical use.</p><p>In still another aspect of the present invention, it is possible to provide a multicolor light emitting device using fluorescence and phosphorescence and having high luminous efficiency.</p><p>In still another aspect of the present invention, it is possible to provide a multicolor light emitting device that uses fluorescence and phosphorescence, has a relatively small number of layers to be formed, is advantageous for practical use, and has high luminous efficiency.</p><p>In still another aspect of the present invention, it is possible to provide a display module, a lighting module, a light-emitting device, a display device, an electronic device, and a lighting device that can be manufactured at low cost by using any of the above-described light-emitting elements.</p><p>In still another aspect of the present invention, it is possible to provide a display module, a lighting module, a light-emitting device, a display device, an electronic device, and a lighting device in which power consumption is reduced by using any of the light-emitting elements described above.</p>

1A and 1B are conceptual views of a light emitting device. 2A and 2B are conceptual views of an active matrix light emitting device. 3A and 3B are conceptual views of an active matrix light emitting device. 4 is a conceptual diagram of an active matrix light emitting device; 5A and 5B are conceptual views of a passive matrix light emitting device. 6 (A) and (B) show a lighting device. 7(A), (B1), (B2), (C), and (D) show an electronic device. 8 shows a light source device. 9 shows a lighting device. Fig. 10 shows a lighting device. 11 is a view showing a display device and a lighting device in a vehicle. 12A to 12C show an electronic device. 13 is a graph showing the current density-luminance characteristics of the light emitting element 1. FIG. 14 is a graph showing the luminance-current efficiency characteristics of the light emitting device 1; 15 is a graph illustrating voltage-luminance characteristics of the light emitting device 1; 16 is a graph showing the luminance-external quantum efficiency characteristics of the light emitting element 1. 17 shows the emission spectrum of the light emitting element 1. 18 is a graph showing the time dependence of the normalized luminance of the light emitting element 1. FIG. 19(A) and (B) show emission spectra of the light-emitting device 2 and the light-emitting device 3; 20 shows the emission spectrum of the light emitting element 4; Fig. 21 is a graph showing a correlation between energy levels of substances and exciplexes in a light emitting device of one embodiment of the present invention.

EMBODIMENT OF THE INVENTION Hereinafter, embodiment of this invention is described with reference to drawings. However, the present invention is not limited to the following description, and it is easily understood by those skilled in the art that various changes and modifications can be made without departing from the spirit and scope of the present invention. Accordingly, the present invention should not be construed as being limited to the description of the following embodiments.

(Embodiment 1)

Fig. 1A is a diagram showing a light emitting element of one embodiment of the present invention. The light emitting element includes at least an EL layer 103 including a pair of electrodes (a first electrode 101 and a second electrode 102 ) and a light emitting layer 113 . The emission layer 113 includes a first emission layer 113a and a second emission layer 113b.

In FIG. 1A , the hole injection layer 111 , the hole transport layer 112 , the electron transport layer 114 , and the electron injection layer 115 in the EL layer 103 are also shown. However, this laminated structure is an example, and the structure of the EL layer 103 in the light emitting device of one embodiment of the present invention is not limited thereto. Further, in FIG. 1A , the first electrode 101 functions as an anode and the second electrode 102 functions as a cathode.

The first emission layer 113a includes a fluorescent material and a host material. The second emission layer 113b includes a first organic compound, a second organic compound, and a phosphorescent compound. In the light emitting layer having the above structure, the combination of the first organic compound and the second organic compound forms an exciplex.

With this structure, light derived from the fluorescent material can be efficiently emitted from the first light-emitting layer 113a, and light derived from the phosphorescent material can be efficiently emitted from the second light-emitting layer 113b. In addition, even if the light emitting device does not include a charge generating layer between the first light emitting layer 113a and the second light emitting layer 113b (that is, even if the light emitting device is not a tandem device), both fluorescence and phosphorescence can be efficiently obtained. can

When a fluorescent layer and a phosphorescent layer are included in the same EL layer to emit light, the triplet excitation energy of the phosphorescent layer is generally transferred to the host material occupying the majority of the fluorescent layer. This causes a significant decrease in luminous efficiency. The reason for this is as follows: triplet excitation caused in the phosphorescent layer because a substance having a condensed aromatic ring (particularly, condensed aromatic hydrocarbon ring) skeleton typified by anthracene having a low triplet level is generally used as a host material. Energy is transferred to the host material in the fluorescent layer, resulting in non-luminescent attenuation. At present, since it is difficult to obtain a desired emission wavelength and desirable device characteristics or reliability without using a material having a condensed aromatic ring skeleton in the fluorescent layer, a structure in which the fluorescent layer and the phosphorescent layer are included in the same EL layer exhibits desirable characteristics. It makes it difficult to obtain a light emitting device with

Because the triplet excited state has a long relaxation time, the diffusion distance of excitons is long, and many excitons generated in the phosphorescent layer migrate to the fluorescent layer by diffusion, and non-luminescent attenuation of the excitons occurs. This also reduces the luminous efficiency of the phosphorescent layer.

In the present embodiment, the first organic compound and the second organic compound form an exciplex in the second light emitting layer 113b, and triplet excitation energy moves from the exciplex to the phosphorescent material to obtain light emission. This structure can solve the above-mentioned problem.

An exciplex is an excited state formed from two types of substances. The two types of substances that have formed the exciplex return to the ground state by light emission and function as the original two types of substances. In other words, since the exciplex itself does not have a ground state, the transfer of energy between the exciplexes or energy transfer from another substance to the exciplex is difficult in principle to occur.

A process in which one as a cation among the first organic compound and the second organic compound and the other as an anion in the first organic compound and the second organic compound are adjacent to each other to form an exciplex (electroplex process) in the light emitting device is thought to dominate the generation of the exciplex of Even if one of the first organic compound and the second organic compound is brought into an excited state, the one rapidly interacts with the other of the first organic compound and the second organic compound to be adjacent to each other to form an excited complex, thereby forming a second light emitting layer ( Most of the excitons in 113b) exist as exciplexes.

Since the singlet excitation energy of the exciplex is equivalent to the energy difference between the lower HOMO level of the first organic compound and the second organic compound and the higher LUMO level of the first organic compound and the second organic compound, The singlet excitation energy of the exciplex is lower than the singlet excitation energy of both organic compounds, and no singlet excitation energy transfer from the exciplex to the first organic compound and the second organic compound occurs. In addition, the triplet excitation energy of the exciplex is lower than the triplet excitation energy of the first organic compound or the second organic compound, preferably lower than the triplet excitation energy of the first organic compound and the second organic compound. By selecting the organic compound and the second organic compound, little energy transfer from the exciplex to the first organic compound and the second organic compound can occur. In addition, since energy transfer between the exciplexes hardly occurs as described above, the diffusion of excitons in the second light emitting layer 113b hardly occurs. As a result, it is possible to solve the above-mentioned problem.

When the first light-emitting layer 113a and the second light-emitting layer 113b, which are fluorescent layers, are in contact with each other, energy transfer from the exciplex to the host material of the first light-emitting layer 113a (particularly triplet energy transfer) may occur at the interface. However, as described above, since diffusion of excitons in the second light-emitting layer 113b hardly occurs, energy transfer from the exciplex to the host material in the first light-emitting layer 113a is limited in a limited area (that is, in the first light-emitting layer ( 113a) and the second light emitting layer 113b), and a large loss of excitation energy does not occur. Accordingly, one feature of one embodiment of the present invention is that although the first light emitting layer 113a and the second light emitting layer 113b do not necessarily contact each other, high efficiency can be obtained even if the light emitting layers are in contact with each other. In other words, the device structure in which the first light-emitting layer 113a and the second light-emitting layer 113b are in contact with each other is also one embodiment of the present invention.

Even when the triplet excitation energy of the host material contained in the fluorescent layer is lower than the triplet excitation energy of the first organic compound and the second organic compound contained in the phosphorescent layer as described above, one embodiment of the present invention is applied Accordingly, the light emitting device can emit fluorescence and phosphorescence with high efficiency.

In addition, in the light emitting device of one embodiment of the present invention, energy transfer from the exciplex to the host material in the first light emitting layer 113a (particularly triplet energy transfer) or from a phosphorescent material to the host in the first light emitting layer 113a Although energy transfer to the material occurs at the interface between the first light-emitting layer 113a and the second light-emitting layer 113b, energy can be converted into light emission in the first light-emitting layer 113a. In other words, when the first light emitting layer 113a has a structure in which a singlet excited state easily occurs by triplet-triplet annihilation (TTA), triplets are transferred from the exciplex to the host material at the interface. The excitation energy may be converted into fluorescence in the first emission layer 113a. Thereby, the energy loss of the light emitting element of one embodiment of this invention can be reduced. In order for the light emitting layer 113a to have a structure in which a singlet excited state easily occurs by TTA, the singlet excitation level of the host material is higher than the singlet excitation level of the fluorescent material, and the triplet excitation level of the host material is fluorescent. It is preferable to select the host material and the fluorescent material of the first light emitting layer 113a to be lower than the triplet excitation level of the material. As the combination of the host material and the fluorescent substance in this relationship, a combination of a material having an anthracene skeleton as the host material and a material having a pyrene skeleton as the fluorescent substance, etc. are preferable.

In addition, when the first light-emitting layer 113a is very thick, it is difficult to obtain light emission from the second light-emitting layer 113c. In addition, when the first light-emitting layer 113a is very thin, it is difficult to obtain light emission from the first light-emitting layer 113a. For this reason, it is preferable that the thickness of the 1st light emitting layer 113a is 5 nm or more and 20 nm or less.

When the first light emitting layer 113a is formed on the anode side, it is preferable that the first light emitting layer 113a has a hole transport property. In this case, it is preferable that a bipolar material having a high hole transport property is used. As such a material, a material having an anthracene skeleton is preferable. Further, when the fluorescent substance has high hole trapping properties (eg, a condensed aromatic amine compound described later), the concentration of the fluorescent substance is preferably 5% or less, more preferably 1% or more and 4% or less, and 1% or more. 3% or less is more preferable, and in this case, phosphorescence and fluorescence can be obtained in a balanced manner with high efficiency. Further, when the HOMO level of the fluorescent material is higher than the HOMO level of the host material, the fluorescent material exhibits hole trapping properties.

There is no limitation on the combination of the first organic compound and the second organic compound in the second light emitting layer 113b as long as an exciplex can be formed, but one organic compound is a material having hole transport properties, and the other organic compound is an electron It is preferable that it is a material which has transport property. In this case, a donor-acceptor excited state is likely to be formed, whereby an excited complex can be efficiently formed. When the combination of the first organic compound and the second organic compound is a combination of a material having a hole transport property and a material having an electron transport property, the carrier balance can be easily controlled by adjusting the mixing ratio. Specifically, the weight ratio of the material having the hole transporting property to the material having the electron transporting property is preferably 1:9 or more and 9:1 or less. In order to increase quantum efficiency, it is particularly preferable that the weight ratio of the material having the hole transporting property to the material having the electron transporting property is 5:5 or more and 9:1 or less in the region closest to the anode in the second light emitting layer 113b. Since the carrier balance can be easily controlled in the light emitting device having the above-described structure, the recombination region can also be easily adjusted. The light-emitting element of one embodiment of the present invention also has the feature that the emission color can be adjusted by controlling the carrier balance as described above.

In the light emitting element of this embodiment, it is preferable that the carrier recombination regions are distributed to some extent. For this purpose, it is preferable that each light emitting layer has carrier trapping property appropriately, and it is particularly preferable that the phosphorescent material has electron trapping property. Examples of the material having high electron trapping property include transition metal complexes (eg, iridium complexes and platinum complexes) in which the ligand includes a pyrimidine skeleton or a diazine skeleton such as a pyrazine skeleton. In addition, the phosphorescent material exhibits electron trapping properties when the LUMO level of the phosphorescent material is lower than the LUMO level of both the first organic compound and the second organic compound.

Further, in this light emitting device, it is preferable that the light emitted from the first light emitting layer 113a has a peak on the shorter wavelength side than that of the light emitted from the second light emitting layer 113b. The luminance of a light-emitting device using a phosphorescent material emitting short-wavelength light tends to decrease rapidly. In view of the above, it is possible to provide a light emitting device with little decrease in luminance by using fluorescence having a short wavelength.

Since the number and thickness of the layers forming the EL layer are smaller in the light emitting device of one embodiment of the present invention than in the tandem device, the light emitting device of one embodiment of the present invention is highly cost-effective and suitable for mass production. Further, since the number of layers forming the EL layer is small as described above, the thickness of the EL layer can be thin and the light emitting element is optically advantageous (that is, the light outcoupling efficiency is high). In addition, the light emitting device may have a low driving voltage, and efficiently provide both fluorescence and phosphorescence with a driving voltage of 5V or less.

Further, although the fluorescent layer and the phosphorescent layer are in contact with each other, both phosphorescence and fluorescence can be easily obtained because deactivation of triplet excitation energy is difficult to occur by use of the above-mentioned exciplex.

21 shows the correlation between the energy levels of the material and the exciplex in the light emitting device described in the present embodiment. In Figure 21, S_FHis the singlet excitation level of the host material in the first light emitting layer 113a; T_FHis the triplet excitation level of the host material in the first light emitting layer 113a; S_FG and T_FGare, respectively, a singlet excitation level and a triplet excitation level of the guest material (fluorescent material) in the first light emitting layer 113a; S_PH and T_PHare a singlet excitation level and a triplet excitation level of the host material (the first organic compound or the second organic compound) in the second light emitting layer 113b, respectively; S_E and T_Eare, respectively, a singlet excitation level and a triplet excitation level of the exciplex in the second light emitting layer 113b; and T_PGdenotes the triplet excitation level of the guest material (phosphorescent material) in the second light emitting layer 113b.

21, TTA occurs due to collision of triplet excited molecules of the host material in the first light emitting layer 113a, and some of the triplet excited molecules of the host material are converted into singlet excited molecules, and triplet excited molecules Some of them are deactivated with heat. At this time, the singlet excitation energy of the host material generated by TTA moves to the singlet excited state of the fluorescent material, and the singlet excitation energy is converted into fluorescence.

In the second light emitting layer 113b, the excitation level S of the exciplex_E and T_Eis the excitation level S of the host material (the first organic compound and the second organic compound)_PH and T_PHSince it is lower, no excitation energy transfer from the exciplex to the host material occurs. Also, it goes without saying that no energy transfer from one exciplex to another exciplex occurs. When the excitation energy of the excitation complex is transferred to the guest material (phosphorescent material), the excitation energy is converted into light emission. As described above, the triplet excitation energy hardly diffuses and is converted into light emission in the second light emitting layer 113b.

Since the triplet excitation energy is hardly diffused, there is a slight energy transfer at the interface between the first light-emitting layer 113a and the second light-emitting layer 113b (eg, the T of the phosphorescent material at the interface)._PGfrom T_FH or T_FGenergy transfer), light emission can be obtained with high efficiency from both the first light-emitting layer 113a and the second light-emitting layer 113b. In addition, in the first light emitting layer 113a, a singlet excited state is generated by triplet excitation energy in TTA, and a part of energy transfer at the interface is converted into fluorescence. This can suppress the loss of energy.

In the light emitting device of this embodiment, the light emitting device can be a multicolor light emitting device by causing the first light emitting layer 113a and the second light emitting layer 113b to emit light having different emission wavelengths. The emission spectrum of the light emitting element is formed by combining lights having different emission peaks, and has at least two peaks.

Such a light emitting element is suitable for obtaining white light emission. When the first light-emitting layer 113a and the second light-emitting layer 113b emit light of complementary colors, white light emission can be obtained. In addition, white light with high color rendering properties formed by three or more colors can be obtained by using a plurality of light-emitting materials that emit light having different wavelengths in one or both of the light-emitting layers. In this case, each light emitting layer may be divided into layers, and the divided layers may contain different light emitting materials.

Since the absorption band on the lowest energy side of the phosphorescent material overlaps the emission spectrum of the exciplex in the second emission layer 113b, the light emitting device may have high luminous efficiency. The difference in the equivalent energy value between the peak wavelength in the absorption band of the lowest energy side of the phosphorescent material and the peak wavelength of the emission spectrum of the exciplex is preferably 0.2 eV or less, in this case, the difference between the absorption band and the emission spectrum The overlap is large. Although it is preferred that the absorption band on the lowest energy side of the phosphorescent material is the absorption band of the triplet excitation level, the absorption band on the lowest energy side is a singlet when the TADF material is used instead of the phosphorescent material described later. It is preferable that it is an absorption band of an excitation level.

In Fig. 1A, the first light emitting layer 113a is formed on the side where the first electrode 101 functioning as the anode is formed, and the second light emitting layer 113b is the second electrode 102 functioning as the cathode. It is formed on the side where it is formed. However, the stacking order may be reversed. In other words, the first light-emitting layer 113a may be formed on the side where the second electrode 102 functioning as a cathode is formed, and the second light-emitting layer 113b is formed on the side where the first electrode 101 functioning as an anode is formed. may be formed.

In addition, the structure of the light emitting element in this embodiment is effective as long as the light emitting material included in the second light emitting layer 113b can convert triplet excitation energy into light emission. In the following description, phosphorescent material may be substituted with thermally activated delayed fluorescence (TADF) material, and phosphorescent layer may be substituted with TADF layer. A TADF material is a substance that can up-convert a triplet excited state to a singlet excited state using a small amount of thermal energy (that is, inverse interterm crossover is possible), and efficiently exhibits light emission (fluorescence) from a singlet excited state to be. TADF is efficiently obtained under the condition that the energy difference between the triplet excitation level and the singlet excitation level is 0 eV or more and 0.2 eV or less, preferably 0 eV or more and 0.1 eV or less. Both phosphorescent materials and TADF materials are materials capable of converting triplet excitation energy into light emission.

(Embodiment 2)

In the present embodiment, a detailed example of the structure of the light emitting element described in Embodiment 1 will be described below with reference to FIGS. 1A and 1B.

The light emitting element in this embodiment includes an EL layer including a plurality of layers between a pair of electrodes. In this embodiment, the light emitting element includes a first electrode 101 , a second electrode 102 , and an EL layer 103 provided between the first electrode 101 and the second electrode 102 . Further, in this embodiment, the first electrode 101 functions as an anode and the second electrode 102 functions as a cathode. In other words, when a voltage is applied between the first electrode 101 and the second electrode 102 so that the potential of the first electrode 101 is higher than the potential of the second electrode 102, light emission can be obtained.

Since the first electrode 101 functions as an anode, the first electrode 101 is formed of any one of a metal, an alloy, an electrically conductive compound, a mixture thereof, etc. having a high work function (specifically, a work function of 4.0 eV or more). It is preferably formed using Specific examples include indium-tin oxide (ITO: indium tin oxide), indium-tin oxide containing silicon or silicon oxide, indium-zinc oxide, and indium oxide (IWZO) containing tungsten oxide and zinc oxide. Included. The electrically conductive metal oxide film is generally formed by a sputtering method, but may be formed by applying a sol-gel method or the like. For example, indium oxide-zinc oxide can be deposited by a sputtering method using a target obtained by adding 1 wt% to 20 wt% zinc oxide with respect to indium oxide. The film of indium oxide (IWZO) containing tungsten oxide and zinc oxide uses a target in which tungsten oxide is added to indium oxide in an amount of 0.5% to 5% by weight and zinc oxide is added to indium oxide in an amount of 0.1% to 1% by weight. It may be formed by a sputtering method. Furthermore, gold (Au), platinum (Pt), nickel (Ni), tungsten (W), chromium (Cr), molybdenum (Mo), iron (Fe), cobalt (Co), copper (Cu), palladium (Pd), a nitride of a metal material (for example, titanium nitride), etc. are mentioned. Graphene can also be used. Further, if a composite material described later is used for the layer in contact with the first electrode 101 in the EL layer 103, the electrode material can be selected irrespective of the work function.

There is no particular limitation on the stacked structure of the EL layer 103 as long as the light emitting layer 113 has the structure described in Embodiment 1. For example, the EL layer 103 may be formed by appropriately combining a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, an electron injection layer, a carrier blocking layer, an intermediate layer, and the like. In this embodiment, the EL layer 103 has a hole injection layer 111 , a hole transport layer 112 , a light emitting layer 113 , an electron transport layer 114 , and an electron injection layer 115 over the first electrode 101 . It has a structure in which it is stacked in this order. Specific examples of materials used for each layer are given below.

The hole injection layer 111 is a layer including a material having high hole injection properties. Molybdenum oxide, vanadium oxide, ruthenium oxide, tungsten oxide, manganese oxide, or the like may be used. Alternatively, the hole injection layer 111 may be formed of phthalocyanine (abbreviated as H).₂Pc) or phthalocyanine-based compounds such as copper phthalocyanine (abbreviation: CuPc); 4,4'-bis[<i>N</i>-(4-diphenylaminophenyl)-<i>N</i>-phenylamino]biphenyl (abbreviation: DPAB) or<i>N</i>,<i>N</i>'-bis{4-[bis(3-methylphenyl)amino]phenyl}-<i>N</i>,<i>N</i>aromatic amine compounds such as '-diphenyl-(1,1'-biphenyl)-4,4'-diamine (abbreviation: DNTPD); It may be formed using a polymer compound such as poly(3,4-ethylenedioxythiophene)/poly(styrenesulfonic acid) (PEDOT/PSS).

Alternatively, a composite material in which a material having a hole transport property includes a material having an acceptor property may be used for the hole injection layer 111 . Further, by using such a material having a hole transport property, including a material having an acceptor property, a material used for forming the electrode can be selected irrespective of its work function. In other words, in addition to a material having a high work function, a material having a low work function may be used for the first electrode 101 . As an acceptor substance, 7,7,8,8-tetracyano-2,3,5,6-tetrafluoroquinodimethane (abbreviated as F)₄-TCNQ), chloranil, etc. are mentioned. Moreover, a transition metal oxide is mentioned. Also, oxides of metals belonging to Groups 4 to 8 of the periodic table may be used. Specifically, vanadium oxide, niobium oxide, tantalum oxide, chromium oxide, molybdenum oxide, tungsten oxide, manganese oxide, and rhenium oxide are preferable because of their high electron acceptability. Of these, molybdenum oxide is particularly preferable because it is stable in air, has low hygroscopicity, and is easy to handle.

As the material having hole transport properties used in the composite material, any of various organic compounds such as aromatic amine compounds, carbazole derivatives, aromatic hydrocarbons, and high molecular compounds (eg, oligomers, dendrimers, or polymers) can be used. Moreover, it is preferable that the organic compound used for a composite material is an organic compound which has high hole transporting property. Specifically, 10^-6cm²It is preferred that a material having a hole mobility of at least /Vs is used. Specific examples of organic compounds that can be used as a material having hole transport properties in a composite material are given below.

Examples of aromatic amine compounds include<i>N</i>,<i>N</i>'-die(<i>p</i>-Tolyl)-<i>N</i>,<i>N</i>'-diphenyl-<i>p</i>-Phenylenediamine (abbreviation: DTDPPA), 4,4'-bis[<i>N</i>-(4-diphenylaminophenyl)-<i>N</i>-phenylamino]biphenyl (abbreviation: DPAB),<i>N</i>,<i>N</i>'-bis{4-[bis(3-methylphenyl)amino]phenyl}-<i>N</i>,<i>N</i>'-diphenyl-(1,1'-biphenyl)-4,4'-diamine (abbreviation: DNTPD), and 1,3,5-tris[<i>N</i>-(4-diphenylaminophenyl)-<i>N</i>-phenylamino]benzene (abbreviation: DPA3B).

Specific examples of carbazole derivatives that can be used in the composite material include 3-[<i>N</i>-(9-phenylcarbazol-3-yl)-<i>N</i>-Phenylamino]-9-phenylcarbazole (abbreviation: PCzPCA1), 3,6-bis[<i>N</i>-(9-phenylcarbazol-3-yl)-<i>N</i>-phenylamino]-9-phenylcarbazole (abbreviation: PCzPCA2), and 3-[<i>N</i>-(1-naphthyl)-<i>N</i>-(9-phenylcarbazol-3-yl)amino]-9-phenylcarbazole (abbreviation: PCzPCN1).

Other examples of carbazole derivatives that can be used in composite materials include 4,4'-di(<i>N</i>-carbazolyl)biphenyl (abbreviation: CBP), 1,3,5-tris[4-(<i>N</i>-carbazolyl)phenyl]benzene (abbreviation: TCPB), 9-[4-(10-phenyl-9-anthryl)phenyl]-9<i>H</i>-carbazole (abbreviation: CzPA), and 1,4-bis[4-(<i>N</i>-carbazolyl)phenyl]-2,3,5,6-tetraphenylbenzene.

Examples of aromatic hydrocarbons that can be used in composite materials include 2-<i>tert</i>-Butyl-9,10-di (2-naphthyl) anthracene (abbreviation: t-BuDNA), 2-<i>tert</i>-Butyl-9,10-di(1-naphthyl)anthracene, 9,10-bis(3,5-diphenylphenyl)anthracene (abbreviation: DPPA), 2-<i>tert</i>-Butyl-9,10-bis(4-phenylphenyl)anthracene (abbreviation: t-BuDBA), 9,10-di(2-naphthyl)anthracene (abbreviation: DNA), 9,10-diphenylanthracene (abbreviation) : DPAnth), 2-<i>tert</i>-Butylanthracene (abbreviation: t-BuAnth), 9,10-bis(4-methyl-1-naphthyl)anthracene (abbreviation: DMNA), 2-<i>tert</i>-Butyl-9,10-bis[2-(1-naphthyl)phenyl]anthracene, 9,10-bis[2-(1-naphthyl)phenyl]anthracene, 2,3,6,7-tetramethyl- 9,10-di(1-naphthyl)anthracene, 2,3,6,7-tetramethyl-9,10-di(2-naphthyl)anthracene, 9,9'-bianthryl, 10,10' -Diphenyl-9,9'-bianthryl, 10,10'-bis(2-phenylphenyl)-9,9'-bianthryl, 10,10'-bis[(2,3,4,5 ,6-pentaphenyl)phenyl]-9,9'-bianthryl, anthracene, tetracene, rubrene, perylene, and 2,5,8,11-tetra(<i>tert</i>-Butyl) perylene. Other examples include pentacene and coronene. 1x10 with 14 to 42 carbon atoms^-6cm²Aromatic hydrocarbons having a hole mobility of at least /Vs are particularly preferred.

Further, the aromatic hydrocarbon that can be used in the composite material may have a vinyl skeleton. Examples of the aromatic hydrocarbon having a vinyl group include 4,4'-bis(2,2-diphenylvinyl)biphenyl (abbreviation: DPVBi) and 9,10-bis[4-(2,2-diphenylvinyl)phenyl] anthracene (abbreviated as DPVPA).

Another example is poly(<i>N</i>-Vinylcarbazole) (abbreviation: PVK), poly(4-vinyltriphenylamine) (abbreviation: PVTPA), poly[<i>N</i>-(4-{<i>N</i>'-[4-(4-diphenylamino)phenyl]phenyl-<i>N</i>'-phenylamino}phenyl)methacrylamide] (abbreviation: PTPDMA), and poly[<i>N</i>,<i>N</i>'-bis(4-butylphenyl)-<i>N</i>,<i>N</i>There are polymer compounds such as '-bis(phenyl)benzidine] (abbreviation: poly-TPD).

By providing the hole injection layer, it is possible to achieve high hole injection property and drive the light emitting element at a low voltage.

The hole transport layer 112 is a layer including a material having hole transport properties. Examples of materials having hole transport properties include 4,4'-bis[<i>N</i>-(1-naphthyl)-<i>N</i>-phenylamino]biphenyl (abbreviation: NPB);<i>N</i>,<i>N</i>'-bis(3-methylphenyl)-<i>N</i>,<i>N</i>'-diphenyl-[1,1'-biphenyl]-4,4'-diamine (abbreviation: TPD), 4,4',4"-tris (<i>N</i>,<i>N</i>-diphenylamino)triphenylamine (abbreviation: TDATA), 4,4',4"-tris[<i>N</i>-(3-methylphenyl)-<i>N</i>-Phenylamino]triphenylamine (abbreviation: MTDATA), 4,4'-bis[<i>N</i>-(Spiro-9,9'-bifluoren-2-yl)-<i>N</i>and aromatic amine compounds such as -phenylamino]biphenyl (abbreviation: BSPB), and 4-phenyl-4'-(9-phenylfluoren-9-yl)triphenylamine (abbreviation: BPAFLP). The materials listed here have high hole transport properties and are mainly^-6cm²It has a hole mobility greater than /Vs. The organic compound presented as an example of a material having hole transport properties in the above-described composite material may also be used in the hole transport layer 112 . Also, poly(<i>N</i>-Vinylcarbazole) (abbreviation: PVK) and poly(4-vinyltriphenylamine) (abbreviation: PVTPA) may be used. In addition, the layer containing the substance having hole transporting property is not limited to a single layer, and may be a lamination of two or more layers containing any of the above-mentioned substances.

In the light emitting device of one embodiment of the present invention, when the first light emitting layer 113a is provided on the anode side, the HOMO level of the material used for the hole transport layer 112 and the HOMO level of the host material in the first light emitting layer 113a are preferably close to each other (energy difference of 0.2 eV or less). This can prevent too many holes from being captured by the trap state, and allow the holes to flow through the first light emitting layer 113a and the second light emitting layer 113b. Therefore, fluorescence and phosphorescence can be easily obtained in a balanced manner with high efficiency.

The light emitting layer 113 has the structure of the light emitting layer 113 described in Embodiment 1. In other words, the first light-emitting layer 113a and the second light-emitting layer 113b are stacked on the first electrode in this order. The host material and the fluorescent material are included in the first light emitting layer 113a. The first organic compound, the second organic compound, and a material capable of converting triplet excitation energy into light emission (a phosphorescent compound or a TADF material) are included in the second light-emitting layer 113b. In the light emitting device of this embodiment, the combination of the first organic compound and the second organic compound forms an exciplex. The exciplex can provide energy to a material capable of converting triplet excitation energy into light emission, so that light can be efficiently emitted from both the first light-emitting layer 113a and the second light-emitting layer 113b.

Examples of materials that can be used as the fluorescent material in the first light emitting layer 113a are given below. Fluorescent materials other than those presented below may also be used.

Examples of the fluorescent substance include 5,6-bis[4-(10-phenyl-9-anthryl)phenyl]-2,2'-bipyridine (abbreviation: PAP2BPy), 5,6-bis[4'-( 10-phenyl-9-anthryl) biphenyl-4-yl] -2,2'-bipyridine (abbreviation: PAPP2BPy);<i>N</i>,<i>N</i>'-bis[4-(9-phenyl-9)<i>H</i>-fluoren-9-yl)phenyl]-<i>N</i>,<i>N</i>'-diphenyl-pyrene-1,6-diamine (abbreviation: 1,6FLPAPrn),<i>N</i>,<i>N</i>'-bis(3-methylphenyl)-<i>N</i>,<i>N</i>'-bis[3-(9-phenyl-9)<i>H</i>-fluoren-9-yl)phenyl]-pyrene-1,6-diamine (abbreviation: 1,6mMemFLPAPrn);<i>N</i>,<i>N</i>'-bis[4-(9<i>H</i>-carbazol-9-yl)phenyl]-<i>N</i>,<i>N</i>'-diphenylstilbene-4,4'-diamine (abbreviation: YGA2S), 4-(9<i>H</i>-carbazol-9-yl)-4'-(10-phenyl-9-anthryl)triphenylamine (abbreviation: YGAPA), 4-(9<i>H</i>-carbazol-9-yl)-4'-(9,10-diphenyl-2-anthryl)triphenylamine (abbreviation: 2YGAPPA);<i>N</i>,9-diphenyl-<i>N</i>-[4-(10-phenyl-9-anthryl)phenyl]-9<i>H</i>-carbazol-3-amine (abbreviation: PCAPA), perylene, 2,5,8,11-tetra-<i>tert</i>-Butylperylene (abbreviation: TBP), 4-(10-phenyl-9-anthryl)-4'-(9-phenyl-9<i>H</i>-carbazol-3-yl) triphenylamine (abbreviation: PCBAPA),<i>N</i>,<i>N</i>"-(2-<i>tert</i>-Butylanthracene-9,10-diyldi-4,1-phenylene)bis[<i>N</i>,<i>N</i>',<i>N</i>'-triphenyl-1,4-phenylenediamine] (abbreviation: DPABPA);<i>N</i>,9-diphenyl-<i>N</i>-[4-(9,10-diphenyl-2-anthryl)phenyl]-9<i>H</i>-carbazol-3-amine (abbreviation: 2PCAPPA);<i>N</i>-[4-(9,10-diphenyl-2-anthryl)phenyl]-<i>N</i>,<i>N</i>',<i>N</i>'-triphenyl-1,4-phenylenediamine (abbreviation: 2DPAPPA),<i>N</i>,<i>N</i>,<i>N</i>',<i>N</i>',<i>N</i>",<i>N</i>",<i>N</i>''',<i>N</i>'''-octaphenyldibenzo[<i>g</i>,<i>p</i>]Chrysene-2,7,10,15-tetraamine (abbreviation: DBC1), coumarin 30,<i>N</i>-(9,10-diphenyl-2-anthryl)-<i>N</i>,9-diphenyl-9<i>H</i>-carbazol-3-amine (abbreviation: 2PCAPA);<i>N</i>-[9,10-bis(1,1'-biphenyl-2-yl)-2-anthryl]-<i>N</i>,9-diphenyl-9<i>H</i>-carbazol-3-amine (abbreviation: 2PCABPhA);<i>N</i>-(9,10-diphenyl-2-anthryl)-<i>N</i>,<i>N</i>',<i>N</i>'-triphenyl-1,4-phenylenediamine (abbreviation: 2DPAPA),<i>N</i>-[9,10-bis(1,1'-biphenyl-2-yl)-2-anthryl]-<i>N</i>,<i>N</i>',<i>N</i>'-Triphenyl-1,4-phenylenediamine (abbreviation: 2DPABPhA), 9,10-bis(1,1'-biphenyl-2-yl)-<i>N</i>-[4-(9<i>H</i>-carbazol-9-yl)phenyl]-<i>N</i>-phenylanthracen-2-amine (abbreviation: 2YGABPhA),<i>N</i>,<i>N</i>,9-triphenylanthracen-9-amine (abbreviation: DPhAPhA), coumarin 545T,<i>N</i>,<i>N</i>'-diphenylquinacridone (abbreviation: DPQd), rubrene, 5,12-bis(1,1'-biphenyl-4-yl)-6,11-diphenyltetracene (abbreviation: BPT), 2 -(2-{2-[4-(dimethylamino)phenyl]ethenyl}-6-methyl-4<i>H</i>-pyran-4-ylidene) propanedinitrile (abbreviation: DCM1), 2-{2-methyl-6-[2-(2,3,6,7-tetrahydro-1)<i>H</i>,5<i>H</i>-benzo[<i>ij</i>]quinolizin-9-yl)ethenyl]-4<i>H</i>-pyran-4-ylidene} propane dinitrile (abbreviation: DCM2);<i>N</i>,<i>N</i>,<i>N</i>',<i>N</i>'-Tetrakis (4-methylphenyl) tetracene-5,11-diamine (abbreviation: p-mPhTD), 7,14-diphenyl-<i>N</i>,<i>N</i>,<i>N</i>',<i>N</i>'-Tetrakis (4-methylphenyl) acenaphtho [1,2-<i>a</i>]fluoranthene-3,10-diamine (abbreviation: p-mPhAFD), 2-{2-isopropyl-6-[2-(1,1,7,7-tetramethyl-2,3,6, 7-Tetrahydro-1<i>H</i>,5<i>H</i>-benzo[<i>ij</i>]quinolizin-9-yl)ethenyl]-4<i>H</i>-pyran-4-ylidene} propane dinitrile (abbreviation: DCJTI), 2-{2-<i>tert</i>-Butyl-6-[2-(1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1<i>H</i>, 5<i>H</i>-benzo[<i>ij</i>]quinolizin-9-yl)ethenyl]-4<i>H</i>-Pyran-4-ylidene}propanedinitrile (abbreviation: DCJTB), 2-(2,6-bis{2-[4-(dimethylamino)phenyl]ethenyl}-4<i>H</i>-pyran-4-ylidene) propanedinitrile (abbreviation: BisDCM), and 2-{2,6-bis[2-(8-methoxy-1,1,7,7-tetramethyl-2; 3,6,7-Tetrahydro-1<i>H</i>,5<i>H</i>-benzo[<i>ij</i>]quinolizin-9-yl)ethenyl]-4<i>H</i>-pyran-4-ylidene} propanedinitrile (abbreviation: BisDCJTM). Condensed aromatic diamine compounds typified by pyrenediamine compounds such as 1,6FLPAPrn and 1,6mMemFLPAPrn are particularly preferable because of their high hole trapping properties, high luminous efficiency and high reliability.

Examples of materials that can be used as a host material in the first light emitting layer 113a are given below.

In this example, 9-phenyl-3-[4-(10-phenyl-9-anthryl)phenyl]-9<i>H</i>-carbazole (abbreviation: PCzPA), 9-[4-(10-phenyl-9-anthryl)phenyl]-9<i>H</i>-carbazole (abbreviation: CzPA), 7-[4-(10-phenyl-9-anthryl)phenyl]-7<i>H</i>-Dibenzo[<i>c</i>,<i>g</i>]carbazole (abbreviation: cgDBCzPA), 6-[3-(9,10-diphenyl-2-anthryl)phenyl]-benzo[<i>b</i>]naphtho[1,2-<i>d</i>]furan (abbreviation: 2mBnfPPA), and 9-phenyl-10-{4-(9-phenyl-9)<i>H</i>and anthracene compounds such as -fluoren-9-yl)biphenyl-4'-yl}anthracene (abbreviation: FLPPA). By using a substance having an anthracene skeleton as a host material, it is possible to provide a light emitting layer having high luminous efficiency and high durability. In particular, CzPA, cgDBCzPA, 2mBnfPPA, and PCzPA are preferable because of their excellent properties.

As a material capable of converting triplet excitation energy into light emission in the second light emitting layer 113b, a phosphorescent material and a TADF material may be used. Examples of phosphorescent materials and TADF materials are given below.

Examples of phosphorescent materials include tris{2-[5-(2-methylphenyl)-4-(2,6-dimethylphenyl)-4<i>H</i>-1,2,4-triazol-3-yl-κ<i>N</i>2]phenyl-κ<i>C</i>}Iridium (III) (abbreviation: Ir (mpptz-dmp)₃), tris (5-methyl-3,4-diphenyl-4<i>H</i>-1,2,4-triazolato) iridium (III) (abbreviation: Ir (Mptz)₃), or tris[4-(3-biphenyl)-5-isopropyl-3-phenyl-4<i>H</i>-1,2,4-Triazolato]iridium (III) (abbreviation: Ir (iPrptz-3b)₃) etc. 4<i>H</i>-organometallic iridium complex having a triazole skeleton; tris[3-methyl-1-(2-methylphenyl)-5-phenyl-1<i>H</i>-1,2,4-triazolato]iridium (III) (abbreviation: Ir (Mptz1-mp)₃), or tris(1-methyl-5-phenyl-3-propyl-1<i>H</i>-1,2,4-triazolato)iridium (III) (abbreviation: Ir (Prptz1-Me)₃) etc. 1<i>H</i>-organometallic iridium complex having a triazole skeleton;<i>fac</i>-tris[1-(2,6-diisopropylphenyl)-2-phenyl-1<i>H</i>-imidazole] iridium (III) (abbreviation: Ir (iPrpmi)₃), or tris[3-(2,6-dimethylphenyl)-7-methylimidazo[1,2-<i>f</i>]Phenantridinato]iridium (III) (abbreviation: Ir (dmpimpt-Me)₃) organometallic iridium complexes having an imidazole skeleton such as; Bis[2-(4',6'-difluorophenyl)pyridinato-<i>N</i>,<i>C</i>^2'] Iridium (III) tetrakis (1-pyrazolyl) borate (abbreviation: FIr6), bis [2- (4',6'-difluorophenyl) pyridinato-<i>N</i>,<i>C</i>^2'] Iridium (III) picolinate (abbreviation: FIrpic), bis {2- [3 ', 5'-bis (trifluoromethyl) phenyl] pyridinato-<i>N</i>,<i>C</i>^2'} Iridium (III) picolinate (abbreviation: Ir (CF₃ppy)₂(pic)), or bis[2-(4',6'-difluorophenyl)pyridinato-<i>N</i>,<i>C</i>^2']There is an organometallic iridium complex in which a phenylpyridine derivative having an electron withdrawing group, such as iridium(III)acetylacetonate (abbreviation: Fir(acac)), is a ligand. These are compounds emitting blue phosphorescence, and have an emission peak at 440 nm to 520 nm.

Other examples include tris(4-methyl-6-phenylpyrimidinato)iridium(III) (abbreviated as Ir(mppm)₃), tris(4-<i>t</i>-Butyl-6-phenylpyrimidinato)iridium (III) (abbreviation: Ir (tBuppm)₃), (acetylacetonato)bis(6-methyl-4-phenylpyrimidinato)iridium (III) (abbreviation: Ir (mppm)₂(acac)), (acetylacetonato)bis(6-<i>tert</i>-Butyl-4-phenylpyrimidinato)iridium (III) (abbreviation: Ir (tBuppm)₂(acac)), (acetylacetonato)bis[6-(2-norbornyl)-4-phenylpyrimidinato]iridium (III) (abbreviation: Ir (nbppm)₂(acac)), (acetylacetonato)bis[5-methyl-6-(2-methylphenyl)-4-phenylpyrimidinato]iridium (III) (abbreviation: Ir (mpmppm)₂(acac)), and (acetylacetonato)bis(4,6-diphenylpyrimidinato)iridium(III) (abbreviation: Ir(dppm)₂(acac)) an organometallic iridium complex having a pyrimidine skeleton; (acetylacetonato)bis(3,5-dimethyl-2-phenylpyrazinato)iridium (III) (abbreviation: Ir (mppr-Me)₂(acac), and (acetylacetonato)bis(5-isopropyl-3-methyl-2-phenylpyrazinato)iridium(III) (abbreviated as Ir(mppr-iPr)₂(acac)) an organometallic iridium complex having a pyrazine skeleton; Tris(2-phenylpyridinato-<i>N</i>,<i>C</i>^2') Iridium (III) (abbreviation: Ir (ppy)₃), bis (2-phenylpyridinato-<i>N</i>,<i>C</i>^2') Iridium (III) acetylacetonate (abbreviation: Ir (ppy)₂(acac)), bis(benzo[<i>h</i>]quinolinato)iridium (III) acetylacetonate (abbreviation: Ir (bzq)₂(acac)), tris(benzo[<i>h</i>]quinolinato) iridium (III) (abbreviation: Ir (bzq)₃), tris (2-phenylquinolinato-<i>N</i>,<i>C</i>^2') Iridium (III) (abbreviation: Ir (pq)₃), and bis(2-phenylquinolinato-<i>N</i>,<i>C</i>^2') Iridium (III) acetylacetonate (abbreviation: Ir (pq)₂(acac)) an organometallic iridium complex having a pyridine skeleton; and tris(acetylacetonato)(monophenanthroline)terbium(III) (abbreviated as Tb(acac)₃(Phen)) and the like rare earth metal composites. They are mainly green phosphorescent compounds and have an emission peak at 500 nm to 600 nm. In addition, an organometallic iridium complex having a pyrimidine skeleton is particularly preferable because of its remarkably high reliability and luminous efficiency.

In another example, (diisobutylylmethanato)bis[4,6-bis(3-methylphenyl)pyrimidinato]iridium(III) (abbreviated as Ir(5mdppm)₂(dibm)), bis[4,6-bis(3-methylphenyl)pyrimidinato](dipivaloylmethanato)iridium(III) (abbreviation: Ir(5mdppm)₂(dpm)), and bis[4,6-di(naphthalen-1-yl)pyrimidinato](dipivaloylmethanato)iridium(III) (abbreviated as Ir(d1npm)₂(dpm)); (acetylacetonato)bis(2,3,5-triphenylpyrazinato)iridium(III) (abbreviation: Ir(tppr)₂(acac)), bis (2,3,5-triphenylpyrazinato) (dipivaloylmethanato) iridium (III) (abbreviation: Ir (tppr)₂(dpm)), or (acetylacetonato)bis[2,3-bis(4-fluorophenyl)quinoxalinato]iridium(III) (abbreviated as Ir(Fdpq)₂(acac)) an organometallic iridium complex having a pyrazine skeleton; Tris(1-phenylisoquinolinato-<i>N</i>,<i>C</i>^2') Iridium (III) (abbreviation: Ir (piq)₃) and bis(1-phenylisoquinolinato-<i>N</i>,<i>C</i>^2') Iridium (III) acetylacetonate (abbreviation: Ir (piq)₂(acac)) an organometallic iridium complex having a pyridine skeleton; 2,3,7,8,12,13,17,18-octaethyl-21<i>H</i>,23<i>H</i>-Platinum complexes, such as porphyrin platinum (II) (abbreviation: PtOEP); Tris(1,3-diphenyl-1,3-propanedionato)(monophenanthroline)europium(III) (abbreviation: Eu(DBM)₃(Phen)) and tris[1-(2-thenoyl)-3,3,3-trifluoroacetonato](monophenanthroline)europium(III) (abbreviated as Eu(TTA))₃(Phen)) and the like rare earth metal composites. These are compounds emitting red phosphorescence and have an emission peak at 600 nm to 700 nm. An organometallic iridium complex having a pyrazine skeleton can provide red light emission with a desirable chromaticity.

Phosphorescent materials other than those described above may be used.

The materials listed below can be used as TADF materials.

Fullerene, derivatives thereof, acridine derivatives such as proplavin, eosin, and the like may be used. Metal-containing porphyrins such as porphyrins comprising magnesium (Mg), zinc (Zn), cadmium (Cd), tin (Sn), platinum (Pt), indium (In), or palladium (Pd) can be used. Examples of the metal-containing porphyrin include a protoporphyrin tin fluoride complex (SnF) represented by the following structural formula.₂(Proto IX)), mesoporphyrin tin fluoride complex (SnF)₂(Meso IX)), hematoporphyrin tin fluoride complex (SnF₂(Hemato IX)), coproporphyrin tetramethyl ester tin fluoride complex (SnF₂(Copro III-4Me)), octaethylporphyrin tin fluoride complex (SnF₂(OEP)), ethioporphyrin tin fluoride complex (SnF)₂(Etio I)), and octaethylporphyrin platinum chloride complex (PtCl)₂(OEP)).

<img file="KR102403208B1_D0001.tif" />

Or 2-(biphenyl-4-yl)-4,6-bis(12-phenylindolo[2,3-a]carbazol-11-yl)-1,3,5 represented by the following structural formula A heterocyclic compound including a π-electron-excess heteroaromatic ring and a π-electron deficient heteroaromatic ring, such as -triazine (abbreviation: PIC-TRZ), can be used. The heterocyclic compound is preferably used because of high electron transport properties and hole transport properties due to the π-electron excess heteroaromatic ring and the π-electron deficient heteroaromatic ring. In addition, in a substance in which a π-electron-rich heteroaromatic ring is directly bonded to a π-electron-deficient heteroaromatic ring, both the donor property of the π-electron-rich heteroaromatic ring and the acceptor property of the π-electron-poor heteroaromatic ring are increased, and S₁ lieutenant and T₁ Since the energy difference between levels becomes small, it is used especially preferably.

<img file="KR102403208B1_D0002.tif" />

There is no particular limitation on the material that can be used as the first organic compound and the second organic compound as long as it is a combination of materials satisfying the conditions described in Embodiment 1. A variety of carrier transport materials can be selected.

Examples of materials having electron transport properties include bis(10-hydroxybenzo[<i>h</i>]quinolinato) beryllium (II) (abbreviation: BeBq)₂), bis(2-methyl-8-quinolinolato)(4-phenylphenollato)aluminum(III)(abbreviation: BAlq), bis(8-quinolinolato)zinc(II)(abbreviation: Znq) , bis[2-(2-benzoxazolyl)phenollatto)zinc(II) (abbreviation: ZnPBO), or bis[2-(2-benzothiazolyl)phenollatto]zinc(II) (abbreviation: ZnBTZ) heterocyclic compounds having polyazole skeletons such as; 2-(4-biphenylyl)-5-(4-<i>tert</i>-Butylphenyl)-1,3,4-oxadiazole (abbreviation: PBD), 3-(4-biphenylyl)-4-phenyl-5-(4-<i>tert</i>-Butylphenyl)-1,2,4-triazole (abbreviation: TAZ), 1,3-bis[5-(<i>p</i>-<i>tert</i>-Butylphenyl)-1,3,4-oxadiazol-2-yl]benzene (abbreviation: OXD-7), 9-[4-(5-phenyl-1,3,4-oxadiazole-2- work) phenyl]-9<i>H</i>-carbazole (abbreviation: CO11), 2,2',2''-(1,3,5-benzenetriyl)tris(1-phenyl-1<i>H</i>-benzimidazole) (abbreviation: TPBI), or 2-[3-(dibenzothiophen-4-yl)phenyl]-1-phenyl-1<i>H</i>-heterocyclic compounds having a polyazole skeleton such as benzimidazole (abbreviation: mDBTBIm-II); 2-[3-(dibenzothiophen-4-yl)phenyl]dibenzo[<i>f</i>,<i>h</i>]quinoxaline (abbreviation: 2mDBTPDBq-II), 2-[3'-(dibenzothiophen-4-yl)biphenyl-3-yl]dibenzo[<i>f</i>,<i>h</i>]quinoxaline (abbreviation: 2mDBTBPDBq-II), 2-[3'-(9<i>H</i>-carbazol-9-yl) biphenyl-3-yl] dibenzo [<i>f</i>,<i>h</i>]quinoxaline (abbreviation: 2mCzBPDBq), 4,6-bis[3-(phenanthren-9-yl)phenyl]pyrimidine (abbreviation: 4,6mPnP2Pm), or 4,6-bis[3-(4-di heterocyclic compounds having a diazine skeleton such as benzothienyl)phenyl]pyrimidine (abbreviation: 4,6mDBTP2Pm-II); and 2-[3-(dibenzothiophen-4-yl)biphenyl-3-yl]dibenzo[<i>f</i>,<i>h</i>]quinoxaline (abbreviation: 2mDBTBPDBQu-II), 3,5-bis[3-(9)<i>H</i>-carbazol-9-yl)phenyl]pyridine (abbreviation: 35DCzPPy) or 1,3,5-tri[3-(3-pyridyl)phenyl]benzene (abbreviation: TmPyPB), such as a heterocyclic ring having a pyridine skeleton There are compounds. Of the above materials, a heterocyclic compound having a diazine skeleton and a heterocyclic compound having a pyridine skeleton are preferable because of their high reliability. Specifically, a heterocyclic compound having a diazine (pyrimidine or pyrazine) skeleton has high electron transport properties, and thus contributes to a reduction in driving voltage.

Examples of materials having hole transport properties include 4,4'-bis[<i>N</i>-(1-naphthyl)-<i>N</i>-phenylamino]biphenyl (abbreviation: NPB);<i>N</i>,<i>N</i>'-bis(3-methylphenyl)-<i>N</i>,<i>N</i>'-diphenyl-[1,1'-biphenyl]-4,4'-diamine (abbreviation: TPD), 4,4'-bis[<i>N</i>-(Spiro-9,9'-bifluoren-2-yl)-<i>N</i>-Phenylamino]biphenyl (abbreviation: BSPB), 4-phenyl-4'-(9-phenylfluoren-9-yl)triphenylamine (abbreviation: BPAFLP), 4-phenyl-3'-(9-phenyl Fluoren-9-yl) triphenylamine (abbreviation: mBPAFLP), 4-phenyl-4'- (9-phenyl-9<i>H</i>-carbazol-3-yl) triphenylamine (abbreviation: PCBA1BP), 4,4'-diphenyl-4"-(9-phenyl-9<i>H</i>-carbazol-3-yl) triphenylamine (abbreviation: PCBBi1BP), 4-(1-naphthyl)-4'-(9-phenyl-9<i>H</i>-carbazol-3-yl)triphenylamine (abbreviation: PCBANB), 4,4'-di(1-naphthyl)-4"-(9-phenyl-9<i>H</i>-carbazol-3-yl) triphenylamine (abbreviation: PCBNBB), 9,9-dimethyl-<i>N</i>-phenyl-<i>N</i>-[4-(9-phenyl-9<i>H</i>-carbazol-3-yl)phenyl]fluoren-2-amine (abbreviation: PCBAF), or<i>N</i>-phenyl-<i>N</i>-[4-(9-phenyl-9<i>H</i>compounds having an aromatic amine skeleton such as -carbazol-3-yl)phenyl]spiro-9,9'-bifluoren-2-amine (abbreviation: PCBASF); 1,3-bis(<i>N</i>-carbazolyl)benzene (abbreviation: mCP), 4,4'-di(<i>N</i>-carbazolyl)biphenyl (abbreviation: CBP), 3,6-bis(3,5-diphenylphenyl)-9-phenylcarbazole (abbreviation: CzTP), or 3,3'-bis(9-phenyl- 9<i>H</i>-carbazole) (abbreviation: PCCP) compounds having a carbazole skeleton; 4,4',4"-(benzene-1,3,5-triyl)tri(dibenzothiophene) (abbreviation: DBT3P-II), 2,8-diphenyl-4-[4-(9- Phenyl-9<i>H</i>-Fluoren-9-yl)phenyl]dibenzothiophene (abbreviation: DBTFLP-III), or 4-[4-(9-phenyl-9)<i>H</i>-Fluoren-9-yl)phenyl]-6-phenyldibenzothiophene (abbreviation: DBTFLP-IV), etc., a compound having a thiophene skeleton, and 4,4',4''-(benzene-1,3) ,5-triyl)tri(dibenzofuran) (abbreviation: DBF3P-II) or 4-{3-[3-(9-phenyl-9)<i>H</i>There are compounds having a furan skeleton, such as -fluoren-9-yl)phenyl]phenyl}dibenzofuran (abbreviation: mmDBFFLBi-II). Among the materials described above, compounds having an aromatic amine skeleton and compounds having a carbazole skeleton are preferable because they have high reliability and high hole transport properties and contribute to a reduction in driving voltage.

The carrier transport material may be selected from a variety of materials in addition to the carrier transport materials described above. In addition, as the first organic compound and the second organic compound, a substance having a triplet level (the energy difference between the ground state and the triplet excited state) higher than the triplet level of the phosphorescent compound is preferably selected. Further, the combination of the first organic compound and the second organic compound is preferably selected such that an exciplex exhibiting emission of a wavelength overlapping with the wavelength of the absorption band on the lowest energy side of the phosphorescent material is formed.

In addition, a combination of using a material having electron transport properties as one of the first organic compound and the second organic compound and using a material having hole transport properties as the other organic compound is advantageous for the formation of the exciplex. By changing the amount contained in each compound, the transport property of the light emitting layer can be easily adjusted, so that the recombination region can be easily adjusted. The ratio of the amount of the material having the hole transport property to the amount of the material having the electron transport property may be 1:9 to 9:1.

The light emitting layer 113 having the above-described structure may be formed by a co-evaporation method using a vacuum deposition method, an inkjet method using a mixed solution, a spin coating method, a dip coating method, or the like.

Further, although the structure in which the first light emitting layer 113a is formed on the anode side and the second light emitting layer 113b is formed on the cathode side has been described in this embodiment, the stacking order may be reversed. In other words, the second light emitting layer 113b may be formed on the anode side, and the first light emitting layer 113a may be formed on the cathode side.

The second light emitting layer 113b may be divided into two or more layers, and the divided layers may contain different light emitting materials. In particular, the second light emitting layer 113b represents a first phosphorescent layer exhibiting red light (ie, light having an emission spectrum peak in 580 nm to 680 nm) and green light (ie light having an emission spectrum peak in 500 nm to 560 nm). It is preferable to adopt a structure in which it is divided into a second phosphorescent layer, and the first light emitting layer 113a exhibits blue light (that is, light having an emission spectrum peak at 400 nm to 480 nm), and in this case, white light emission with favorable color rendering is obtained. can Further, in this case, the first light emitting layer 113a, the first phosphorescent layer, and the second phosphorescent layer are preferably laminated in this order for high durability. In addition, the first light emitting layer 113a is preferably formed on the anode side, and in this case, desirable characteristics can be obtained.

Other structures and effects of the light emitting layer 113 are the same as those described in Embodiment 1. Reference is made to Embodiment 1.

The electron transport layer 114 is a layer including a material having electron transport properties. For example, tris(8-quinolinolato)aluminum (abbreviation: Alq), tris(4-methyl-8-quinolinolato)aluminum (abbreviation: Almq)₃), bis(10-hydroxybenzo[<i>h</i>]quinolinato) beryllium (abbreviation: BeBq)₂), or a metal complex having a quinoline skeleton or benzoquinoline skeleton, such as bis(2-methyl-8-quinolinolato)(4-phenylphenollato)aluminum (abbreviation: BAlq). Bis[2-(2-hydroxyphenyl)benzoxazolato]zinc (abbreviation: Zn(BOX)₂) or bis[2-(2-hydroxyphenyl)benzothiazolato]zinc (abbreviation: Zn(BTZ)₂) may also be used, such as a metal complex having an oxazole-based or thiazole-based ligand. In addition to the metal complex, 2-(4-biphenylyl)-5-(4-<i>tert</i>-Butylphenyl)-1,3,4-oxadiazole (abbreviation: PBD), 1,3-bis[5-(<i>p</i>-<i>tert</i>-Butylphenyl)-1,3,4-oxadiazol-2-yl]benzene (abbreviation: OXD-7), 3-(4-biphenylyl)-4-phenyl-5-(4-<i>tert</i>-Butylphenyl)-1,2,4-triazole (abbreviation: TAZ), vasophenanthroline (abbreviation: BPhen), vasocuproin (abbreviation: BCP), etc. may also be used. The materials listed here have high electron transport properties, mainly^-6cm²It has an electron mobility greater than /Vs. In addition, any of the above-mentioned host materials having electron transport properties may be used for the electron transport layer 114 .

The electron transport layer 114 is not limited to a single layer, and may be a stack of two or more layers each containing any of the above-described materials.

Between the electron transport layer and the light emitting layer, a layer for controlling transport of electron carriers may be provided. This is a layer formed by adding a small amount of a substance having a high electron trapping property to the above-mentioned material having a high electron transport property, and the layer can adjust the carrier balance by preventing the transport of electron carriers. This structure is very effective in preventing problems that occur when electrons pass through the light emitting layer (eg, decrease in device lifetime).

An electron injection layer 115 may be provided between the electron transport layer 114 and the second electrode 102 in contact with the second electrode 102 . In the electron injection layer 115, lithium fluoride (LiF), cesium fluoride (CsF), or calcium fluoride (CaF)₂) such as alkali metals, alkaline earth metals, or compounds thereof may be used. For example, a layer formed using a material having electron transport properties and comprising an alkali metal, an alkaline earth metal, or a compound thereof can be used. Further, when a layer formed using a material having electron transport properties and containing an alkali metal or alkaline earth metal is used as the electron injection layer 115, electron injection from the second electrode 102 is efficiently performed.

For the second electrode 102 , any of metals, alloys, electrically conductive compounds, and mixtures thereof having a low work function (specifically, a work function of 3.8 eV or less) may be used. Specific examples of such cathode materials include alkali metals (such as lithium (Li) and cesium (Cs)), magnesium (Mg), calcium (Ca), and strontium (Sr) in Groups 1 and 2 of the periodic table. elements, their alloys (eg MgAg and AlLi), rare earth metals such as europium (Eu) and ytterbium (Yb), and alloys thereof. However, if an electron injection layer is provided between the second electrode 102 and the electron transport layer, the second electrode 102 may be subjected to various conductive properties such as Al, Ag, ITO, or indium tin oxide containing silicon or silicon oxide. Any of the materials can be used irrespective of the work function. These conductive materials can be deposited by a sputtering method, an inkjet method, a spin coating method, or the like.

Any of various methods can be used for forming the EL layer 103 irrespective of whether it is a dry process or a wet process. For example, a vacuum vapor deposition method, an inkjet method, or a spin coating method may be employed. Different forming methods may be employed for each electrode or each layer.

The electrode may be formed by a wet method using a sol-gel method, or may be formed by a wet method using a metal paste. Alternatively, the electrode may be formed by a dry method such as a sputtering method or a vacuum vapor deposition method.

In the light emitting device having the above-described structure, a current flows due to a potential difference between the first electrode 101 and the second electrode 102, and the holes and electrons are recombined in the light emitting layer 113 containing a material having high light emitting properties. is illuminated That is, the light emitting region is formed in the light emitting layer 113 .

Light emission is extracted through one or both of the first electrode 101 and the second electrode 102 . Accordingly, one or both of the first electrode 101 and the second electrode 102 is a light-transmitting electrode.

Further, the structure of the EL layer 103 provided between the first electrode 101 and the second electrode 102 is not limited to the structure described above. In order to prevent quenching due to the proximity of the light emitting area to the metal used for the electrode and carrier injection layer, it is recommended that the light emitting area where holes and electrons recombine are located apart from the first electrode 101 and the second electrode 102 . desirable.

In order to suppress the energy transfer from excitons generated in the light emitting layer, the hole transport layer and the electron transport layer in contact with the light emitting layer 113, in particular, the carrier transport layer in contact with the side close to the light emitting region in the light emitting layer 113 are the light emitting material of the light emitting layer Alternatively, it is preferable to use a material having a wider bandgap than the emission center material included in the light emitting layer.

It is preferable that the light emitting element in this embodiment is produced on board|substrates, such as glass and plastic. As the lamination method on the substrate, lamination may be performed sequentially from the first electrode 101 side, or may be sequentially laminated from the second electrode 102 side. In the light emitting device, one light emitting element may be fabricated on one substrate, but a plurality of light emitting elements may be fabricated on one substrate. By the plurality of light emitting elements as described above formed on one substrate, a lighting device or a passive matrix light emitting device in which the elements are separated can be manufactured. The light emitting element may be formed on a substrate such as glass or plastic, for example, on an electrode electrically connected to a FET (field-effect transistor), whereby an active matrix light emitting device in which the FET controls the driving of the light emitting element can be manufactured. Further, the structure of the FET is not particularly limited. In addition, although the crystallinity of the semiconductor used for a FET may use an amorphous semiconductor or a crystalline semiconductor, it is not specifically limited to these. Further, the driving circuit formed on the FET substrate may be formed of either an n-type FET and a p-type FET, or an n-type FET and a p-type FET.

In addition, this embodiment can be suitably combined with any of the other embodiments.

Next, an embodiment of a light emitting device having a structure in which a plurality of light emitting units are stacked (hereinafter also referred to as a stacked device) will be described with reference to FIG. 1B . In this light emitting element, a plurality of light emitting units are provided between the first electrode and the second electrode. One light emitting unit has a structure similar to that of the EL layer 103, shown in Fig. 1A. In other words, the light emitting element shown in FIG. 1A includes a single light emitting unit, and the light emitting element in this embodiment includes a plurality of light emitting units.

In FIG. 1B , a first light emitting unit 511 and a second light emitting unit 512 are stacked between the first electrode 501 and the second electrode 502 , and the first light emitting unit 511 and A charge generating layer 513 is provided between the second light emitting units 512 . The first electrode 501 and the second electrode 502 correspond to the first electrode 101 and the second electrode 102 shown in Fig. 1A, respectively, and explanation for Fig. 1A The materials presented in may be used. In addition, the first light emitting unit 511 and the second light emitting unit 512 may have the same structure or different structures.

The charge generation layer 513 includes a composite material of an organic compound and a metal oxide. As the composite material of the organic compound and the metal oxide, a composite material that can be used for the hole injection layer 111 shown in FIG. 1A may be used. As an organic compound, 1×10^-6cm²It is preferred that a compound having a hole mobility of at least /Vs is used. In addition, any other material may be used as long as it is a material having higher hole-transporting properties than electron-transporting properties. A composite material of an organic compound and a metal oxide can achieve low voltage driving and low current driving because of its excellent carrier injection and carrier transport properties. Further, when the surface of the light emitting unit on the anode side is in contact with the charge generating layer, the charge generating layer can also function as a hole transporting layer of the light emitting unit, so that there is no need to form a hole transporting layer in the light emitting unit.

The charge generating layer 513 may have a laminated structure of a layer containing a composite material of an organic compound and a metal oxide and a layer containing another material. For example, a layer comprising a composite material of an organic compound and a metal oxide may be combined with a layer comprising a compound of a substance selected from substances having an electron donating property and a compound having high electron transporting property. Further, a layer comprising a composite material of an organic compound and a metal oxide may be combined with the transparent conductive film.

The charge generation layer 513 interposed between the first light emitting unit 511 and the second light emitting unit 512 emits light from one side when a voltage is applied between the first electrode 501 and the second electrode 502 . Any structure may be employed as long as electrons can be injected into the unit and holes can be injected into the other light emitting unit. For example, in FIG. 1B , when a voltage is applied so that the potential of the first electrode becomes higher than the potential of the second electrode, the layer injects electrons into the first light emitting unit 511 and the second light emitting unit Any layer can be used as the charge generating layer 513 as long as holes are injected into 512 .

Although the light emitting device having two light emitting units has been described with reference to FIG. 1B, the present invention can be similarly applied to a light emitting device in which three or more light emitting units are stacked. As in the light emitting device of this embodiment, a plurality of light emitting units are divided by a charge generating layer between a pair of electrodes, thereby providing a light emitting device capable of emitting light with high luminance while maintaining a low current density and having a long lifespan it is possible Also, it is possible to achieve a light emitting device that can be driven at a low voltage and has low power consumption.

When the above-described structure of the light emitting layer 113 is applied to at least one of the plurality of units, the number of manufacturing steps of the unit can be reduced, thereby providing an advantageous multicolor light emitting device for practical use.

The structure described above may be combined with any of the structures in this embodiment and other embodiments.

(Embodiment 3)

In this embodiment, a light emitting device including the light emitting element described in Embodiment 1 or 2 will be described.

In this embodiment, a light emitting device manufactured using the light emitting element described in Embodiment 1 or 2 will be described with reference to FIGS. 2A and 2B. Fig. 2A is a top view showing a light emitting device, and Fig. 2B is a cross-sectional view taken along line AB and line CD in Fig. 2A. This light emitting device includes a driver circuit portion (source line driver circuit) 601, a pixel portion 602, and a driver circuit portion (gate line driver circuit (gate line driver circuit) gate line driver circuit) (603). Reference numeral 604 denotes a sealing substrate, reference numeral 605 denotes a sealing agent, and reference numeral 607 denotes a space surrounded by the sealing agent 605 .

In addition, a lead wiring 608 is a flexible printed circuit (FPC) for transmitting signals input to the source line driving circuit 601 and the gate line driving circuit 603 and serving as an external input terminal ( 609) is a wiring for receiving a video signal, a clock signal, a start signal, a reset signal, and the like. Although only the FPC is shown here, a printed wiring board (PWB) may be attached to the FPC. The light emitting device in the present specification includes, in its scope, not only the light emitting device itself but also a light emitting device provided with an FPC or PWB.

Next, a cross-sectional structure will be described with reference to FIG. 2B. A driving circuit unit and a pixel unit are formed on the device substrate 610 . A source line driver circuit 601 as a driver circuit portion and one of the pixels in the pixel portion 602 are shown here.

In the source line driver circuit 601, a CMOS circuit in which an n-channel FET 623 and a p-channel FET 624 are combined is formed. Further, the driving circuit may be formed of any of various circuits such as a CMOS circuit, a PMOS circuit, and an NMOS circuit. Although a driver-integrated type in which a driving circuit is formed on a substrate is described in this embodiment, one aspect of the present invention is not limited to this type, and the driving circuit can be formed outside the substrate.

The pixel portion 602 includes a plurality of pixels including a switching FET 611 , a current control FET 612 , and a first electrode 613 electrically connected to a drain of the current control FET 612 . An insulating material 614 is formed to cover the end of the first electrode 613 . In this embodiment, the insulator 614 is formed using a positive photosensitive acrylic resin film.

The insulating material 614 preferably has a curved surface having a curvature at an upper end portion or a lower end portion thereof. For example, when a positive photosensitive acrylic resin is used for the material of the insulator 614, only the upper end of the insulator 614 has a surface having a radius of curvature (0.2 µm to 3 µm). As the insulator 614, a negative photosensitive resin or a positive photosensitive resin can be used.

An EL layer 616 and a second electrode 617 are formed on the first electrode 613 . As the material used for the first electrode 613 serving as an anode, it is preferable to use a material having a high work function. For example, an ITO film, an indium tin oxide film containing silicon, an indium oxide film containing 2 wt% to 20 wt% zinc oxide, a titanium nitride film, a chromium film, a tungsten film, a Zn film, a Pt film, etc. A single layer film, a lamination of a titanium nitride film and a film containing aluminum as a main component, a titanium nitride film, a film containing aluminum as a main component, a lamination including three layers of a titanium nitride film, etc. can be used. The laminate structure allows for low wiring resistance, good ohmic contact, and function as an anode.

The EL layer 616 is formed by any of various methods such as a vapor deposition method using an evaporation mask, an inkjet method, and a spin coating method. The EL layer 616 has a structure similar to that described in Embodiment 1 or 2. As another material included in the EL layer 616, any of a low molecular weight compound and a high molecular weight compound (including oligomers and dendrimers) may be used.

As a material formed on the EL layer 616 and used for the second electrode 617 serving as a cathode, a material having a low work function (eg, Al, Mg, Li, Ca, or an alloy or compound thereof (MgAg, MgIn, or AlLi, etc.)) is preferably used. When the light generated from the EL layer 616 passes through the second electrode 617, a metal thin film and a transparent conductive film (eg, ITO, indium oxide containing zinc oxide in an amount of 2 wt% to 20 wt%, silicon A lamination of indium tin oxide containing zinc oxide (ZnO) is preferably used for the second electrode 617 .

In addition, the light emitting element is formed of a first electrode 613 , an EL layer 616 , and a second electrode 617 . The light emitting element has the structure described in Embodiment 1 or 2. In the light emitting device of this embodiment, the pixel portion including a plurality of light emitting elements may include both the light emitting element described in Embodiment 1 or 2 and the light emitting element having a structure different therefrom.

The sealing substrate 604 is adhered to the element substrate 610 with a sealant 605 , and the light emitting element 618 is placed in the space 607 surrounded by the element substrate 610 , the sealing substrate 604 , and the sealant 605 . ) is provided. The space 607 may be filled with a filler, an inert gas (such as nitrogen or argon), or a sealant 605 may be filled. When the sealing substrate is provided with a concave portion and a desiccant 625 is provided in the concave portion, deterioration due to the influence of moisture can be suppressed, which is preferable.

As the sealant 605, an epoxy-based resin or glass frit is preferably used. It is desirable that such a material be as impermeable to moisture or oxygen as possible. As the sealing substrate 604, a glass substrate, a quartz substrate, or a plastic substrate formed of fiber-reinforced plastic (FRP), poly(vinyl fluoride) (PVF), polyester, acrylic, or the like can be used.

As described above, a light emitting device including the light emitting element described in Embodiment 1 or 2 can be obtained.

3A and 3B respectively show an example of a light emitting device that achieves full color display by forming a light emitting element exhibiting white light emission and providing a colored layer (color filter) or the like. will be. 3A, a substrate 1001, a base insulating film 1002, a gate insulating film 1003, gate electrodes 1006, 1007, and 1008, a first interlayer insulating film 1020, 2 interlayer insulating film 1021 , peripheral portion 1042 , pixel portion 1040 , driving circuit portion 1041 , first electrodes 1024W, 1024R, 1024G, and 1024B of the light emitting element, barrier rib 1025 , EL layer 1028 ), the second electrode 1029 of the light emitting device, the sealing substrate 1031 , the sealing material 1032 , and the like are shown.

In FIG. 3A , colored layers (a red colored layer 1034R, a green colored layer 1034G, and a blue colored layer 1034B) are provided on the transparent base material 1033 . A black layer (black matrix) 1035 may further be provided. A transparent base material 1033 provided with a colored layer and a black layer is positioned and fixed to the substrate 1001 . In addition, the colored layer and the black layer are covered with an overcoat layer 1036 . In Fig. 3A, light emitted from a part of the light emitting layer does not pass through the colored layer, whereas light emitted from another part of the light emitting layer passes through the colored layer. Since the light that does not pass through the colored layers is white, and the light that passes through any one of the colored layers is red, blue, or green, an image can be displayed using pixels of four colors.

3B is an example in which a colored layer (a red colored layer 1034R, a green colored layer 1034G, and a blue colored layer 1034B) is provided between the gate insulating film 1003 and the first interlayer insulating film 1020 will show As shown in FIG. 3B , a colored layer may be provided between the substrate 1001 and the sealing substrate 1031 .

The light emitting device described above has a structure in which light is extracted from the side of the substrate 1001 on which the FET is formed (bottom emission structure), but has a structure in which light is extracted from the side of the sealing substrate 1031 (top emitter). It may have a top emission structure. 4 is a cross-sectional view of a light emitting device having a top emission structure. In this case, a substrate that does not transmit light may be used as the substrate 1001 . Processes up to the step of forming a connection electrode for connecting the FET and the anode of the light emitting element are performed in a similar manner to the light emitting device having the bottom emission structure. Thereafter, a third interlayer insulating film 1037 is formed to cover the electrode 1022 . This insulating film may have a planarization function. The third interlayer insulating film 1037 may be formed using a material similar to that of the second interlayer insulating film, or may be formed using any other material.

Here, the first electrodes 1024W, 1024R, 1024G, and 1024B of the light emitting element each function as an anode, but may also function as a cathode. In the case of a light emitting device having a top emission structure as shown in FIG. 4, the first electrode is preferably a reflective electrode. The EL layer 1028 is formed to have a structure similar to that of the EL layer 103 described in Embodiment 1 or 2, whereby white light emission can be obtained.

In the case of a top emission structure as shown in Fig. 4, the sealing is performed with a sealing substrate 1031 provided with a colored layer (a red colored layer 1034R, a green colored layer 1034G, and a blue colored layer 1034B). can be performed. The sealing substrate 1031 may be provided with a black layer (black matrix) 1035 positioned between the pixels. The colored layer (the red colored layer 1034R, the green colored layer 1034G, and the blue colored layer 1034B) and the black layer (black matrix) 1035 may be covered with an overcoat layer. In addition, as the sealing substrate 1031, a translucent substrate is used.

Here, an example of performing full color display using four colors of red, green, blue, and white has been shown, but there is no particular limitation, and even if full color display is performed using three colors of red, green, and blue, good night.

The light emitting device in this embodiment can be manufactured using the light emitting element described in Embodiment 1 or 2 and have desirable characteristics. Specifically, since the light emitting element described in Embodiment 1 or 2 has high luminous efficiency, the power consumption of the light emitting device can be reduced. In addition, since the light emitting device is easy to mass-produce, the light emitting device can be provided at low cost.

Although the active matrix light emitting device has been described above, a passive matrix light emitting device will be described below. 5A and 5B show a passive matrix light emitting device fabricated using the present invention. Fig. 5A is a perspective view of the light emitting device, and Fig. 5B is a cross-sectional view taken along line XY in Fig. 5A. In FIGS. 5A and 5B , an EL layer 955 is provided on a substrate 951 between an electrode 952 and an electrode 956 . An end of the electrode 952 is covered with an insulating layer 953 . In addition, a barrier rib layer 954 is provided on the insulating layer 953 . The sidewalls of the partition layer 954 are inclined so that the distance between one sidewall and the other sidewall is gradually narrowed toward the substrate surface. In other words, the cross section along the short side direction of the barrier rib layer 954 is trapezoidal, and the bottom portion (the side in the same direction as the plane direction of the insulating layer 953 and in contact with the insulating layer 953 ) is on the upper side (insulation layer 953 ). The same direction as the plane direction of the layer 953 and shorter than the side not in contact with the insulating layer 953). By providing the barrier rib layer 954 in this way, it is possible to prevent defects in the light emitting element due to static electricity or the like. The passive matrix light emitting device can also have low power consumption by including the light emitting element described in Embodiment 1 or 2 having high luminous efficiency. In addition, since the light emitting device is easy to mass-produce, the light emitting device can be provided at low cost.

Since a plurality of fine light emitting elements arranged in a matrix in the above-described light emitting device can each be controlled, the light emitting device can be suitably used as a display device for displaying an image.

This embodiment can be freely combined with any of the other embodiments.

(Embodiment 4)

In this embodiment, an example in which the light emitting element described in Embodiment 1 or 2 is used in a lighting device will be described with reference to FIGS. 6A and 6B . FIG. 6B is a top view of the lighting device, and FIG. 6A is a cross-sectional view taken along line ef in FIG. 6B.

In the lighting device of the present embodiment, the first electrode 401 is formed on a substrate 400 that is a support and has light-transmitting properties. The first electrode 401 corresponds to the first electrode 101 in the first embodiment. When light is extracted through the first electrode 401 side, the first electrode 401 is formed using a light-transmitting material.

A pad 412 for applying a voltage to the second electrode 404 is provided over the substrate 400 .

An EL layer 403 is formed on the first electrode 401 . The structure of the EL layer 403 corresponds to, for example, the structure of the EL layer 103 in Embodiment 1, or a structure in which the light emitting units 511 and 512 and the charge generating layer 513 are combined. For these structures, reference can be made to the description in the first embodiment.

The second electrode 404 is formed to cover the EL layer 403 . The second electrode 404 corresponds to the second electrode 102 in the first embodiment. When light is extracted through the first electrode 401 side, the second electrode 404 is formed using a material having a high reflectance. The second electrode 404 is connected to the pad 412 so that a voltage is applied thereto.

As described above, the lighting device described in this embodiment includes a light emitting element including a first electrode 401 , an EL layer 403 , and a second electrode 404 . Since the light emitting element has high luminous efficiency, the lighting device in this embodiment can have low power consumption.

By fixing the light emitting element having the above-described structure to the sealing substrate 407 with the sealing agents 405 and 406 to perform sealing, the lighting device is completed. It is possible to use only one of the sealant 405 and the sealant 406 . In addition, the inner sealant 406 (not shown in FIG. 6B) can be mixed with a desiccant capable of adsorbing moisture, resulting in improved reliability.

When the pad 412 and a portion of the first electrode 401 extend to the outside of the sealants 405 and 406 , the extended portion may function as an external input terminal. An IC chip 420 having a converter or the like mounted thereon may be provided on the external input terminal.

As described above, since the lighting device described in this embodiment includes the light emitting element described in Embodiment 1 or 2 as an EL element, the lighting device can have low power consumption. Also, the light emitting device may have a low driving voltage. Also, the light emitting device may be inexpensive.

(Embodiment 5)

In this embodiment, an example of an electronic device each including the light emitting element described in Embodiment 1 or 2 will be described. The light emitting element described in Embodiment 1 or 2 has high luminous efficiency and reduced power consumption. As a result, the electronic devices described in the present embodiment each include a light emitting unit with reduced power consumption. Since the light emitting element described in Embodiment 1 or 2 has a small number of layers formed, the electronic device can be inexpensive.

Examples of electronic devices to which the above-described light emitting device is applied include television devices (also referred to as TVs or television receivers), monitors for computers, etc., cameras such as digital cameras and digital video cameras, digital photo frames, and mobile phones (mobile phones or mobile phones). large game machines such as telephones), portable game machines, portable information terminals, sound reproduction devices, and pachinko machines. Specific examples of these electronic devices are given below.

Fig. 7A shows an example of a television device. In the above television device, a display portion 7103 is incorporated in a housing 7101 . Also, here, the housing 7101 is supported by a stand 7105 . An image can be displayed on the display unit 7103 in which the light emitting elements described in Embodiment 1 or 2 are arranged in a matrix.

The television device may be operated by an operation switch of the housing 7101 or a separate remote controller 7110 . By using the operation key 7109 of the remote controller 7110 , a channel and a volume may be adjusted, and an image displayed on the display unit 7103 may be adjusted. Further, the remote controller 7110 may be provided with a display unit 7107 for displaying data output from the remote controller 7110 .

In addition, the television apparatus is provided with a receiver, a modem, and the like. The receiver can receive general television broadcasts. In addition, when the display device is connected to a wired or wireless communication network through a modem, data communication in one direction (sender to receiver) or bidirectional (between sender and receiver or between receiver) can be performed.

7B1 shows a computer including a main body 7201 , a housing 7202 , a display unit 7203 , a keyboard 7204 , an external connection port 7205 , a pointing device 7206 , and the like. In addition, this computer is manufactured by using the same light emitting elements arranged in a matrix in the display portion 7203 as those described in Embodiment 1 or 2. The computer shown in FIG. 7(B1) may have the structure shown in FIG. 7(B2). The computer shown in FIG. 7B2 is provided with a second display unit 7210 instead of a keyboard 7204 and a pointing device 7206 . The second display unit 7210 is a touch screen, and input may be performed by manipulating an input display on the second display unit 7210 with a finger or a dedicated pen. The second display unit 7210 may display an image other than the input display. The display unit 7203 may also be a touch screen. Problems can be avoided by connecting the two screens with a hinge; For example, it can prevent the screen from being scratched or damaged while storing or transporting the computer. Further, the computer is manufactured by arranging the light emitting elements described in Embodiment 1 or 2 in a matrix on the display unit 7203 .

FIG. 7C shows a portable game machine including two housings, a housing 7301 and a housing 7302 to which a joint 7303 is connected so that the portable game machine can be opened and closed. In the housing 7301 , a display portion 7304 including the light emitting elements described in Embodiment 1 or 2 arranged in a matrix is incorporated, and in the housing 7302 , a display portion 7305 is incorporated. In addition, the portable game machine shown in Fig. 7C includes a speaker unit 7306, a recording medium insertion unit 7307, an LED lamp 7308, an input means (operation key 7309, a connection terminal 7310, a sensor) (7311) (force, displacement, position, velocity, acceleration, angular velocity, revolutions, distance, light, liquid, magnetism, temperature, chemical, voice, time, hardness, electric field, current, voltage, power, radiation, flow, a sensor having a function of measuring humidity, inclination, vibration, odor, or infrared rays), or a microphone 7312), and the like. The structure of the portable game machine has the above-described structure as long as the display unit including each light emitting element described in Embodiment 1 or 2, arranged in a matrix, is used as at least either or both of the display unit 7304 and the display unit 7305. Needless to say, it is not limited, and the structure may appropriately include other appendages. The portable game machine shown in FIG. 7C has a function of reading a program or data stored in a recording medium and displaying it on a display unit, and a function of sharing information with another portable game machine through wireless communication. The portable game machine shown in FIG. 7C is not limited to the above-described functions, and may have various functions.

7D shows an example of a mobile phone. The mobile phone is provided with a display unit 7402 built in a housing 7401, operation buttons 7403, an external connection port 7404, a speaker 7405, a microphone 7406, and the like. In addition, the mobile phone has a display unit 7402, each including the light emitting elements described in Embodiment 1 or 2, arranged in a matrix.

When the display unit 7402 of the mobile phone shown in FIG. 7D is touched with a finger or the like, data can be input into the mobile phone. In this case, an operation such as making a phone call or writing an e-mail may be performed by touching the display unit 7402 with a finger or the like.

The display unit 7402 mainly has three screen modes. The first mode is a display mode mainly for displaying an image. The second mode is an input mode mainly for inputting data such as text. The third mode is a display and input mode in which two modes, a display mode and an input mode, are combined.

For example, when making a phone call or writing an e-mail, a text input mode for mainly inputting text on the display unit 7402 is selected, so that text displayed on the screen can be input. In this case, it is preferable to display the keyboard or numeric buttons on almost the entire screen of the display unit 7402 .

If a detection device including a sensor for detecting tilt, such as a gyroscope or an acceleration sensor, is provided inside the mobile phone, the orientation of the mobile phone (whether the mobile phone is horizontally or vertically for landscape mode or portrait mode) ) to automatically switch the display on the screen of the display unit 7402 .

The screen mode is switched by touching the display unit 7402 or operating the operation button 7403 of the housing 7401 . The screen mode may be switched according to the type of image displayed on the display unit 7402 . For example, when a signal of an image displayed on the display unit is a moving image data signal, the screen mode is switched to the display mode. When the signal is a text data signal, the screen mode is switched to the input mode.

Also, in the input mode, when a signal detected by the optical sensor in the display unit 7402 is detected and an input by a touch on the display unit 7402 is not performed for a certain period of time, the screen mode is switched from the input mode to the display mode It may be controlled as much as possible.

The display unit 7402 may function as an image sensor. For example, personal authentication can be performed by capturing an image such as a palm print or fingerprint by touching the display unit 7402 with a palm or a finger. In addition, by providing a backlight or a sensing light source emitting near-infrared light to the display unit, images of finger veins and palm veins can be captured.

In addition, the structure described in this embodiment can be suitably combined with any of the structures described in Embodiments 1-4.

As described above, since the application range of the light emitting device including the light emitting element described in Embodiment 1 or 2 is very wide, the light emitting device can be applied to electronic devices in various fields. By using the light emitting element described in Embodiment 1 or 2, an electronic device with reduced power consumption can be obtained.

Fig. 8 shows an example of a liquid crystal display device in which the light emitting element described in Embodiment 1 or 2 is used for a backlight. The liquid crystal display shown in FIG. 8 includes a housing 901 , a liquid crystal layer 902 , a backlight unit 903 , and a housing 904 . The liquid crystal layer 902 is connected to the driver IC 905 . The light emitting element described in Embodiment 1 or 2 is used in the backlight unit 903 , and current is supplied through the terminal 906 .

When the light emitting element described in Embodiment 1 or 2 is used for the backlight of the liquid crystal display device, power consumption of the backlight can be reduced. Further, by using the light emitting element described in Embodiment 2, it is possible to manufacture a flat light emitting lighting device, moreover, a large area flat light emitting lighting device, so that the backlight can be a large area backlight, and the liquid crystal display device can also be a large area device . Further, since the light emitting device using the light emitting element described in Embodiment 2 can be thinner than a normal light emitting device, the display device can also be thin.

Fig. 9 shows an example in which the light emitting element described in Embodiment 1 or 2 is used for a table lamp as a lighting device. The table lamp shown in FIG. 9 includes a housing 2001 and a light source 2002 . The lighting device described in Embodiment 4 is used for the light source 2002 .

FIG. 10 shows an example in which the light emitting element described in Embodiment 1 or 2 is used for the indoor lighting device 3001 . The light emitting element described in Embodiment 1 or 2 has a reduced power consumption, so that a lighting device with reduced power consumption can be obtained. Further, since the light emitting element described in Embodiment 1 or 2 can have a large area, the light emitting element can be used in a large area lighting device. Further, since the light emitting element described in Embodiment 1 or 2 is thin, the light emitting element can be used in a lighting device with reduced thickness.

The light emitting element described in Embodiment 1 or 2 may be used for a windshield of an automobile or a dashboard of an automobile. 11 shows an embodiment in which the light emitting element described in Embodiment 2 is used for a windshield of an automobile and a dashboard of an automobile. The display regions 5000 to 5005 each include the light emitting elements described in the first or second embodiment.

The display region 5000 and the display region 5001 are provided on a windshield of an automobile in which the light emitting element described in Embodiment 1 or 2 is incorporated. The light emitting element described in Embodiment 1 or 2 can be formed as a so-called see-through display device that can see opposite sides by including the first electrode and the second electrode formed of the light-transmitting electrode. have. Such a see-through display device may be provided on the windshield of an automobile without blocking the view. Further, in the case where a transistor or the like for driving is provided, it is preferable that a light-transmitting transistor such as an organic transistor using an organic semiconductor material or a transistor using an oxide semiconductor is used.

The display region 5002 is provided in a pillar portion in which the light emitting element described in Embodiment 1 or 2 is incorporated. The display area 5002 may display an image captured by an imaging unit provided on the vehicle body, thereby compensating for a field of view obscured by the pillar part. Similarly, the display area 5003 provided on the dashboard displays an image captured by an imaging means provided on the exterior of the vehicle body, thereby compensating for a field of view obscured by the vehicle body, leading to removal of blind spots and improvement of safety. By displaying images to compensate for areas that the driver cannot see, the driver can easily and comfortably check safety.

The display area 5004 and the display area 5005 may provide various information such as navigation data, a speedometer, a tachometer, a mileage, a fuel meter, a transmission gear instrument, and an air conditioner setting. The items or layout of the display can be appropriately changed by the user. Also, such information may be indicated by the display area 5000 to the display area 5003 . The display area 5000 - the display area 5005 may be used as a lighting device.

The light emitting element described in Embodiment 1 or 2 can have high luminous efficiency and low power consumption. Accordingly, even though a large number of large screens such as the display area 5000 to the display area 5005 are provided, the load on the battery is small, and thus, it is conveniently provided. For this reason, the light emitting device and the lighting device each including the light emitting element described in Embodiment 1 or 2 can be suitably used as a light emitting device in a vehicle and a lighting device in a vehicle.

12A and 12B show an example of a foldable tablet terminal. In FIG. 12A , the tablet terminal is open, and the housing 9630, the display unit 9631a, the display unit 9631b, the display mode switching button 9034, the power button 9035, and the power saving mode switching button 9036 , a clip 9033 , and an operation button 9038 . Further, in the above tablet terminal, one or both of the display portion 9631a and the display portion 9631b are formed using the light emitting device including the light emitting element described in Embodiment 1 or 2.

A part of the display unit 9631a may be a touch screen area 9632a, and when the displayed manipulation key 9637 is touched, data may be input. Although a structure in which a half area of the display unit 9631a has only a display function and the other half area has a touch screen function is illustrated as an example, the structure of the display unit 9631a is not limited thereto. The entire area of the display portion 9631a may have a touch screen function. For example, the entire area of the display unit 9631a may function as a touch screen by displaying keyboard buttons, while the display unit 9631b may be used as a display screen.

Like the display unit 9631a, a portion of the display unit 9631b may be the touch screen area 9632b. When the switch button 9639 for showing/hiding the keyboard on the touch screen is touched with a finger, a stylus, or the like, the keyboard may be displayed on the display unit 9631b.

A touch input may be simultaneously performed in the touch screen area 9632a and the touch screen area 9632b.

By the display mode switching button 9034, for example, the portrait mode and the landscape mode are switched, and the black-and-white display and the color display are switched. By using the power saving mode switching button 9036, it is possible to optimize the luminance of the display according to the amount of external light when the tablet terminal is used, which is detected by a light sensor built into the tablet terminal. The tablet terminal may include, in addition to the optical sensor, another detection device such as a sensor (eg, a gyroscope or an acceleration sensor) for detecting an orientation.

In Fig. 12A, the display portion 9631a and the display portion 9631b have the same display area, but one embodiment of the present invention is not limited to this example. The display portion 9631a and the display portion 9631b may have different areas or different display qualities. For example, one of these may be a display panel capable of displaying an image with a higher density than the other.

In FIG. 12B , the tablet terminal is folded and includes a housing 9630 , a solar cell 9633 , a charge/discharge control circuit 9634 , a battery 9635 , and a DC-DC converter 9636 . 12B shows an example in which the charge/discharge control circuit 9634 includes a battery 9635 and a DC-DC converter 9636 .

Since the tablet terminal is foldable, the housing 9630 can be closed when the tablet terminal is not in use. Accordingly, since the display unit 9631a and the display unit 9631b can be protected, it is possible to provide a tablet terminal having high durability and high reliability for long-term use.

The tablet terminal shown in FIGS. 12A and 12B has a function of displaying various data (eg, still images, moving images, and text images), a function of displaying a calendar, date, time, etc. on the display unit, It may have a touch input function of manipulating or editing data by touch input, a function of controlling processing by various software (programs), and the like.

The solar cell 9633 attached to the surface of the tablet terminal supplies power to a touch screen, a display unit, an image signal processor, and the like. In addition, when the solar cell 9633 is provided on one or two sides of the housing 9630, the battery 9635 can be efficiently charged, which is preferable.

The structure and operation of the charge/discharge control circuit 9634 shown in FIG. 12B will be described with reference to the block diagram of FIG. 12C. 12C shows a solar cell 9633 , a battery 9635 , a DC-DC converter 9636 , a converter 9638 , switches SW1 to SW3 , and a display unit 9631 . The battery 9635, the DC-DC converter 9636, the converter 9638, and the switches SW1 to SW3 correspond to the charge/discharge control circuit 9634 in Fig. 12B.

First, an operation example in the case where electric power is generated by the solar cell 9633 using external light will be described. The voltage of the power generated by the solar cell is raised or lowered by the DC-DC converter 9636 such that the power has a voltage to charge the battery 9635 . Thereafter, when the power supplied from the battery 9635 charged by the solar cell 9633 is used for the operation of the display unit 9631 , the switch SW1 is turned on, and the voltage of the power is transmitted to the display unit 9631 . It is raised or lowered by the converter 9638 to the required voltage. Also, when no display is performed on the display unit 9631 , the battery 9635 may be charged by turning off the switch SW1 and turning on the switch SW2 .

Although the solar cell 9633 has been described as an example of the power generating means, the power generating means is not particularly limited, and the battery 9635 may be charged by another power generating means such as a piezoelectric element or a thermoelectric conversion element (Peltier element). The battery 9635 may be charged by a non-contact power transmission module capable of wirelessly (non-contact) transmitting and receiving power to be charged, or another charging means used in combination, so that the power generation means is not necessarily provided.

One embodiment of the present invention is not limited to the tablet terminal having the shape shown in FIGS. 12A to 12C as long as the display unit 9631 is included.

(Example 1)

In this embodiment, a light-emitting element (light-emitting element 1) of one embodiment of the present invention will be described. In addition, the light emitting element 1 included a light emitting layer 113 including a fluorescent layer (first light emitting layer 113a) and a phosphorescent layer (second light emitting layer 113b) contacted with each other. The phosphorescent layer (second light-emitting layer 113b) comprises a first phosphorescent layer (second light-emitting layer 113b)-1 emitting red phosphorescence and a second phosphorescent layer emitting green phosphorescence (second light-emitting layer 113b)- It was formed in a stack of 2. The structural formula of the organic compound used for the light emitting element 1 is shown below.

<img file="KR102403208B1_D0003.tif" />

A method of manufacturing the light emitting element 1 of this embodiment will be described below.

(Method of manufacturing light emitting element 1)

First, on a glass substrate, a film of indium tin oxide (ITSO) containing silicon oxide was formed by sputtering to form the first electrode 101 . This thickness was 110 nm, and the electrode area was 2 mm x 2 mm. Here, the first electrode 101 functions as an anode of the light emitting element.

Next, in the pretreatment for forming the light emitting device on the substrate, the surface of the substrate was washed with water, baked at 200° C. for 1 hour, and then UV ozone treatment was performed for 370 seconds.

After this, press the substrate to about 10^-4It was transferred to a vacuum deposition apparatus reduced to Pa, and vacuum baking was performed at 170° C. for 30 minutes in a heating chamber of the vacuum deposition apparatus, and then cooled for about 30 minutes.

Then, the substrate provided with the first electrode 101 was fixed to the substrate holder provided in the vacuum deposition apparatus so that the side on which the first electrode 101 was formed was facing down. The pressure in the vacuum deposition apparatus is about 10^-4reduced to Pa. Thereafter, 4,4',4"-(benzene-1,3,5-triyl)tri(dibenzothiol) represented by the structural formula (i) on the first electrode 101 by a vapor deposition method using resistance heating Offen) (abbreviation: DBT3P-II) and molybdenum (VI) oxide were deposited by a co-evaporation method to form a hole injection layer 111. This thickness was set to 40 nm, and DBT3P for molybdenum oxide -II weight ratio was adjusted to 4:2 (= DBT3P-II: molybdenum oxide) In addition, the co-deposition method refers to a vapor deposition method in which deposition is performed from a plurality of evaporation sources simultaneously in one processing chamber.

Next, on the hole injection layer 111, 9-phenyl-3-[4-(10-phenyl-9-anthryl)phenyl]-9 represented by the structural formula (ii)<i>H</i>-Carbazole (abbreviation: PCzPA) was deposited to a thickness of 20 nm to form the hole transport layer 112 .

On the hole transport layer 112, 7-[4-(10-phenyl-9-anthryl)phenyl]-7 represented by the structural formula (iii)<i>H</i>-Dibenzo[<i>c</i>,<i>g</i>]carbazole (abbreviation: cgDBCzPA) and structural formula (iv)<i>N</i>,<i>N</i>'-bis(3-methylphenyl)-<i>N</i>,<i>N</i>'-bis[3-(9-phenyl-9)<i>H</i>-Fluoren-9-yl)phenyl]-pyrene-1,6-diamine (abbreviation: 1,6mMemFLPAPrn) is thick so that the weight ratio of cgDBCzPA to 1,6mMemFLPAPrn is 1:0.04 (=cgDBCzPA:1,6mMemFLPAPrn) A fluorescence layer (first light emitting layer 113a) was formed by deposition at 10 nm by a co-evaporation method. Thereafter, 2-[3'-(dibenzothiophen-4-yl)biphenyl-3-yl]dibenzo[<i>f</i>,<i>h</i>]quinoxaline (abbreviation: 2mDBTBPDBq-II), represented by the structural formula (vi)<i>N</i>-(1,1'-biphenyl-4-yl)-<i>N</i>-[4-(9-phenyl-9<i>H</i>-carbazol-3-yl)phenyl]-9,9-dimethyl-9<i>H</i>-fluoren-2-amine (abbreviation: PCBBiF), and (dipivaloylmethanato)bis(2,3,5-triphenylpyrazinato)iridium (III) (abbreviation: [Ir(tppr)₂(dpm)]) is PCBBiF and [Ir(tppr)₂(dpm)] weight ratio of 2mDBTBPDBq-II to 0.6:0.4:0.05 (=2mDBTBPDBq-II:PCBBiF:[Ir(tppr)₂(dpm)]) to a thickness of 5 nm by a co-deposition method to form a first phosphorescent layer (second light emitting layer 113b)-1, and then 2mDBTBPDBq-II, PCBBiF, and bis[2-(6-<i>tert</i>-Butyl-4-pyrimidinyl-κ<i>N</i>3) phenyl-κ<i>C</i>](2,4-pentanedionato-κ²O,O') iridium (III) (abbreviation: [Ir(tBuppm)₂(acac)]) to PCBBiF and [Ir(tBuppm)₂The weight ratio of 2mDBTBPDBq-II to (acac)] is 0.8:0.2:0.05 (=2mDBTBPDBq-II:PCBBiF:[Ir(tBuppm)₂(acac)]) to a thickness of 20 nm by co-evaporation to form a second phosphorescent layer (second light emitting layer 113b)-2. Thus, a phosphorescent layer (the second light emitting layer 113b) was formed.

In addition, 2mDBTBPDBq-II and PCBBiF form an exciplex in the phosphorescent layer (second light emitting layer 113b). Specifically, the photoluminescence wavelength of the co-deposition film of 2mDBTBPDBq-II and PCBBiF (ie, the emission wavelength of the exciplex) is around 515 nm. This emission wavelength is [Ir(tppr)₂(dpm)] and [Ir(tBuppm)₂(acac)]) overlaps with the absorption band on the longest wavelength side, so the energy transfer efficiency is high.

In the fluorescent layer, the singlet excitation energy of cgDBCzPA, a host material, is higher than that of the fluorescent material, 1,6mMemFLPAPrn. In addition, the triplet excitation energy of cgDBCzPA is lower than that of 1,6mMemFLPAPrn. Therefore, in the fluorescent layer (the first light emitting layer 113a), regeneration and light emission of singlet excitons according to triplet-triplet extinction are easily obtained. The occurrence of delayed fluorescence was actually observed in the structure described above.

Thereafter, on the phosphorescent layer (the second light emitting layer 113b), 2mDBTBPDBq-II was deposited to a thickness of 10 nm, and vasophenanthroline (abbreviation: BPhen) represented by the structural formula (VII) was deposited to a thickness of 15 nm to form electrons. A transport layer 114 was formed.

After the formation of the electron transport layer 114 , lithium fluoride (LiF) was deposited to a thickness of 1 nm by vapor deposition to form the electron injection layer 115 . Finally, aluminum was deposited by vapor deposition to a thickness of 200 nm to form a second electrode 102 serving as a cathode. Through the above-described process, the light emitting device 1 of this embodiment was manufactured.

In addition, in all of the above-described deposition processes, deposition was performed by a resistance heating method.

In a glove box under a nitrogen atmosphere, the light emitting element 1 was sealed with a glass substrate so as not to be exposed to the atmosphere (in particular, a sealant was applied to the outer edge of the element, and UV treatment was first performed at the same time as sealing, and then the heat treatment was performed for 1 hour. while at 80 °C). Thereafter, the reliability of the light emitting element 1 was measured. In addition, the measurement was performed at room temperature (atmosphere maintained at 25°C).

13 shows the current density-luminance characteristics of the light emitting element 1. Referring to FIG. 14 shows the luminance-current efficiency characteristics of the light emitting device 1. Referring to FIG. 15 shows the voltage-luminance characteristics of the light emitting element 1; 16 shows the luminance-external quantum efficiency characteristics of the light emitting device 1. 17 shows the emission spectrum of the light emitting device 1.

As can be seen from the above characteristics, light emitting element 1 does not include an intermediate layer, but light emitting element 1 has 1000 cd/m² It had a current efficiency of about 30 cd/A in the vicinity and an external quantum efficiency of about 13%. This indicates that the light-emitting element 1 has high luminous efficiency. In addition, the driving voltage of the light emitting element 1 was as low as 3V or more and less than 4V.

In addition, the emission spectrum is [Ir(tppr)₂(dpm)] derived from red emission, [Ir(tBuppm)₂(acac)] and blue light emission from 1,6mMemFLPAPrn were observed. This indicates that sufficient light emission is obtained from both the fluorescent layer (the first light-emitting layer 113a) and the phosphorescent layer (the second light-emitting layer 113b). In addition, the light emitting element 1 is 1000cd/m² In the vicinity, it has a correlated color temperature of 3130K and an average color rendering index of 92, which means that the light emitting element 1 has a sufficient color temperature for illumination and is excellent in color rendering.

18 shows the results of the reliability test performed on the light emitting device 1. In the reliability test, the light emitting element 1 had an initial luminance of 5000 cd/m²and was driven under constant current density. 18 shows a change in luminance normalized to an initial luminance of 100%. This result indicates that the light emitting element 1 maintains 94% of the initial luminance even after driving for 62 hours, and the light emitting element 1 has little decrease in luminance due to the driving time and has high reliability.

The singlet excitation levels (S1 level) of cgDBCzPA and 1,6mMemFLPArn used in light emitting device 1 were estimated to be 2.95 eV and 2.68 eV, respectively, from the absorption edge of the co-deposition film.

Table 1 shows the measurement results of the triplet level (T1 level) of 2mDBTBPDBq-II, PCBBiF, cgDBCzPA, and 1,6mMemFLPAPrn used in the light emitting device 1 in this embodiment. The T1 level was obtained by measuring the emission of phosphorescence from the material. In the measurement, each material was irradiated with excitation light of a wavelength of 325 nm, and the measurement temperature was 10K. In the measurement of energy levels, calculations from absorption wavelengths are more precise than calculations from emission wavelengths. However, since the absorption of the T1 level is very small and difficult to measure, the peak wavelength located on the shortest wavelength side of the phosphorescence spectrum was used as the T1 level. For this reason, a small error may be included in the measured value. In addition, since interantibody crossover rarely occurs in cgDBCzPA and 1,6mMemFLPAPrn, tris(2-phenylpyridinato)iridium (abbreviated as Ir(ppy)₃) was added as a sensitizer (ie, co-deposition), and phosphorescence was observed.

<tables num="1"><table><tgroup cols="3"><colspec align="justify" colname="col1" colnum="1" colwidth="4782" /><colspec align="justify" colname="col2" colnum="2" colwidth="4235" /><colspec align="justify" colname="col3" colnum="3" colwidth="2975" /><tbody><row><entry align="justify" colname="col1" /><entry align="justify" colname="col2">Phosphorescence peak wavelength (nm)</entry><entry align="justify" colname="col3">T1 level (eV)</entry></row><row><entry align="justify" colname="col1">2mDBTBPDBq-II</entry><entry align="justify" colname="col2">515</entry><entry align="justify" colname="col3">2.41</entry></row><row><entry align="justify" colname="col1">PCBBiF</entry><entry align="justify" colname="col2">509</entry><entry align="justify" colname="col3">2.44</entry></row><row><entry align="justify" colname="col1">cgDBCzPA</entry><entry align="justify" colname="col2">721</entry><entry align="justify" colname="col3">1.72</entry></row><row><entry align="justify" colname="col1">1,6mMemFLPAPrn</entry><entry align="justify" colname="col2">675</entry><entry align="justify" colname="col3">1.84</entry></row></tbody></tgroup></table></tables>

The above-mentioned results show that in the fluorescent layer of light emitting element 1, the singlet excitation level of cgDBCzPA, a host material, is higher than the singlet excitation level of 1,6mMemFLPAPrn, which is a fluorescent material, and the triplet excitation level of cgDBCzPA is a triplet excitation level of 1,6mMemFLPAPrn. Since it indicates that it is lower than the excitation level, the fluorescent layer (first light emitting layer 113a) has a structure in which regeneration and light emission of singlet excitons according to triplet-triplet extinction are easily obtained.

This result also indicates that the triplet excitation level of the host material cgDBCzPA in the fluorescent layer is lower than the triplet excitation level of the first organic compound (2mDBTBPDBq-II) and the second organic compound (PCBBiF) in the phosphorescent layer. For such structures, many triplet excitons generated in the phosphorescent layer generally diffuse into the fluorescent layer and non-luminescent attenuation occurs. However, in the light emitting device 1 of this embodiment, triplet excitons generated in the phosphorescent layer hardly diffused into the fluorescent layer because the first organic compound and the second organic compound form an exciplex. One of the reasons is probably the following: the transfer of energy from one exciplex to another is unlikely to occur since the exciplex does not have a ground state. As a result, the light emitting element 1 has surprising properties of light emission from both the fluorescent layer and the phosphorescent layer and high efficiency.

As described above, the light emitting element 1 of one embodiment of the present invention has a very good balance, has desirable characteristics, and can be easily and inexpensively manufactured. The above results are attributed to the following: by using the exciplex as the energy donor of the phosphorescent layer, the diffusion of excitons is suppressed, the non-luminescent attenuation of triplet excitation energy is reduced, and the luminous efficiency is increased by the triplet of the host material in the fluorescent layer. This was enhanced by the generation of delayed fluorescence due to anti-triplet extinction.

(Example 2)

In this example, methods for manufacturing the light emitting element 2 and light emitting element 3 of the embodiment of the present invention and their characteristics will be described. The structural formulas of the organic compounds used for the light-emitting element 2 and the light-emitting element 3 are shown below.

<img file="KR102403208B1_D0004.tif" />

(Method of manufacturing light emitting element 2)

A film of indium tin oxide (ITSO) containing silicon oxide was formed on the glass substrate to a thickness of 110 nm by sputtering to form the first electrode 101 . The electrode area was 2 mm x 2 mm.

Next, in the pretreatment for forming the light emitting device on the substrate, the surface of the substrate was washed with water, baked at 200° C. for 1 hour, and then UV ozone treatment was performed for 370 seconds.

After this, press the substrate down to about 10^-4It was transferred to a vacuum deposition apparatus reduced to Pa, and vacuum baking was performed at 170° C. for 30 minutes in a heating chamber of the vacuum deposition apparatus, and then cooled for about 30 minutes.

Then, the substrate provided with the first electrode 101 was fixed to the substrate holder provided in the vacuum deposition apparatus so that the side on which the first electrode 101 was formed was facing down. The pressure in the vacuum deposition apparatus is about 10^-4reduced to Pa. Thereafter, 4,4',4"-(benzene-1,3,5-triyl)tri(dibenzothiyl) represented by the structural formula (i) on the first electrode 101 by a vapor deposition method using resistance heating Offene) (abbreviation: DBT3P-II) and molybdenum (VI) oxide were deposited by a co-evaporation method to form a hole injection layer 111. This thickness was set to 30 nm, and DBT3P for molybdenum oxide The weight ratio of -II was adjusted to 2:1 (=DBT3P-II:molybdenum oxide).

Next, on the hole injection layer 111, 9-phenyl-3-[4-(10-phenyl-9-anthryl)phenyl]-9 represented by the structural formula (ii)<i>H</i>-Carbazole (abbreviation: PCzPA) was deposited to a thickness of 20 nm to form a hole transport layer 112 .

On the hole transport layer 112, 7-[4-(10-phenyl-9-anthryl)phenyl]-7 represented by the structural formula (iii)<i>H</i>-Dibenzo[<i>c</i>,<i>g</i>]carbazole (abbreviation: cgDBCzPA) and structural formula (iv)<i>N</i>,<i>N</i>'-bis(3-methylphenyl)-<i>N</i>,<i>N</i>'-bis[3-(9-phenyl-9)<i>H</i>-Fluoren-9-yl)phenyl]-pyrene-1,6-diamine (abbreviation: 1,6mMemFLPAPrn) is thick so that the weight ratio of cgDBCzPA to 1,6mMemFLPAPrn is 1:0.02 (=cgDBCzPA:1,6mMemFLPAPrn) A first light emitting layer 113a, which is a fluorescent layer, was formed by depositing it with a thickness of 10 nm by a co-evaporation method. Thereafter, 2-[3'-(dibenzothiophen-4-yl)biphenyl-3-yl]dibenzo[<i>f</i>,<i>h</i>]quinoxaline (abbreviation: 2mDBTBPDBq-II), represented by the structural formula (vi)<i>N</i>-(1,1'-biphenyl-4-yl)-<i>N</i>-[4-(9-phenyl-9<i>H</i>-carbazol-3-yl)phenyl]-9,9-dimethyl-9<i>H</i>-fluoren-2-amine (abbreviation: PCBBiF), and bis{4,6-dimethyl-2-[5-(2,6-dimethylphenyl)-3-(3,5) represented by the structural formula (x) -dimethylphenyl)-2-pyrazinyl-κ<i>N</i>]phenyl-κ<i>C</i>} (2,4-pentanedionato-κ²<i>O</i>,<i>O</i>') Iridium (III) (abbreviation: [Ir (dmdppr-dmp)₂(acac)]) is PCBBiF and [Ir(dmdppr-dmp)₂The weight ratio of 2mDBTBPDBq-II to (acac)] is 0.5:0.5:0.05 (=2mDBTBPDBq-II:PCBBiF:[Ir(dmdppr-dmp)₂(acac)]) to a thickness of 5 nm by a co-deposition method to form a first phosphorescent layer (second light emitting layer 113b)-1, and then 2mDBTBPDBq-II, PCBBiF, and structural formula (viii) bis[2-(6-<i>tert</i>-Butyl-4-pyrimidinyl-κ<i>N</i>3) phenyl-κ<i>C</i>](2,4-pentanedionato-κ²O,O') iridium (III) (abbreviation: [Ir(tBuppm)₂(acac)]) to PCBBiF and [Ir(tBuppm)₂The weight ratio of 2mDBTBPDBq-II to (acac)] is 0.8:0.2:0.05 (=2mDBTBPDBq-II:PCBBiF:[Ir(tBuppm)₂(acac)]) to a thickness of 20 nm by co-evaporation to form a second phosphorescent layer (second light emitting layer 113b)-2. Accordingly, the second light emitting layer 113b, which is a phosphorescent layer, was formed.

In addition, 2mDBTBPDBq-II and PCBBiF form an exciplex in the phosphorescent layer. This emission wavelength is [Ir(dmdppr-dmp)₂(acac)] and [Ir(tBuppm)₂(acac)]) overlaps the absorption band on the longest wavelength side, so the energy transfer is very high.

In the fluorescent layer (the first light emitting layer 113a), the singlet excitation energy of cgDBCzPA as the host material is higher than the singlet excitation energy of 1,6mMemFLPAPrn as the fluorescent material. In addition, the triplet excitation energy of cgDBCzPA is lower than that of 1,6mMemFLPAPrn. Therefore, in the phosphorescent layer (the first light emitting layer 113a), regeneration and light emission of singlet excitons according to triplet-triplet annihilation are easily obtained.

Thereafter, on the second light emitting layer 113b, which is a phosphorescent layer, 2mDBTBPDBq-II was deposited to a thickness of 10 nm, and vasophenanthroline (abbreviated as BPhen) represented by the structural formula (VII) was deposited to a thickness of 15 nm to form an electron transport layer ( 114) was formed.

After the formation of the electron transport layer 114 , lithium fluoride (LiF) was deposited to a thickness of 1 nm by vapor deposition to form the electron injection layer 115 . Finally, aluminum was deposited by vapor deposition to a thickness of 200 nm to form a second electrode 102 serving as a cathode. Through the above-described process, the light emitting device 2 of this embodiment was manufactured.

In addition, in all of the above-described deposition processes, deposition was performed by a resistance heating method.

(Method of manufacturing light emitting element 3)

Light-emitting element 3 is PCBBiF and [Ir(dmdppr-dmp) used to form the first phosphorescent layer (second light-emitting layer 113b)-1 in light-emitting element 2₂(acac)] set the weight ratio of 2mDBTBPDBq-II to 0.2:0.8:0.05, and PCBBiF and [Ir(tBuppm)₂(acac)]), except that the weight ratio of 2mDBTBPDBq-II to 0.9:0.1:0.05 was set to be 0.9:0.1:0.05.

In a glove box under a nitrogen atmosphere, each of the light-emitting elements 2 and 3 were sealed with a glass substrate so as not to be exposed to the atmosphere (in particular, a sealant was applied to the outer edge of the element, and UV treatment was first performed at the same time as sealing) Heat treatment was performed at 80° C. for 1 hour). Thereafter, the characteristics of the light emitting device were measured. In addition, the measurement was performed with an integrating sphere at room temperature (atmosphere maintained at 25°C). Table 2 shows 2.5mA/cm³The characteristic values at the current density of

<tables num="2"><table><tgroup cols="7"><colspec align="justify" colname="col1" colnum="1" colwidth="1845" /><colspec align="justify" colname="col2" colnum="2" colwidth="1238" /><colspec align="justify" colname="col3" colnum="3" colwidth="2043" /><colspec align="justify" colname="col4" colnum="4" colwidth="1353" /><colspec align="justify" colname="col5" colnum="5" colwidth="1777" /><colspec align="justify" colname="col6" colnum="6" colwidth="1559" /><colspec align="justify" colname="col7" colnum="7" colwidth="2175" /><tbody><row><entry align="justify" colname="col1" /><entry align="justify" colname="col2">Voltage (V)</entry><entry align="justify" colname="col3">Correlated color temperature (K)</entry><entry align="justify" colname="col4">duv</entry><entry align="justify" colname="col5">Average color rendering index Ra</entry><entry align="justify" colname="col6">Power Efficiency (lm/W)</entry><entry align="justify" colname="col7">External quantum efficiency (%)</entry></row><row><entry align="justify" colname="col1">light emitting element 2</entry><entry align="justify" colname="col2">3.0 </entry><entry align="justify" colname="col3">4710 </entry><entry align="justify" colname="col4">0.0142</entry><entry align="justify" colname="col5">86 </entry><entry align="justify" colname="col6">36 </entry><entry align="justify" colname="col7">14 </entry></row><row><entry align="justify" colname="col1">light emitting element 3</entry><entry align="justify" colname="col2">3.0 </entry><entry align="justify" colname="col3">2950 </entry><entry align="justify" colname="col4">0.0083</entry><entry align="justify" colname="col5">88 </entry><entry align="justify" colname="col6">45 </entry><entry align="justify" colname="col7">18 </entry></row></tbody></tgroup></table></tables>

Light-emitting devices 2 and 3 do not have a special outcoupling structure, but light-emitting devices 2 and 3 have high external quantum efficiency and power efficiency. In addition, the voltage was lower at 3V compared to the tandem light emitting device.

19(A) shows the emission spectrum of the light-emitting device 2, and FIG. 19(B) shows the emission spectrum of the light-emitting device 3. As shown in FIG. As can be seen from the emission spectra, [Ir(dmdppr-dmp)₂(acac)] derived from red emission, [Ir(tBuppm)₂(acac)] and blue emission from 1,6mMemFLPAPrn were observed. This indicates that sufficient light emission is obtained from both the first light-emitting layer 113a as the fluorescent layer and the second light-emitting layer 113b as the phosphorescent layer.

Moreover, each light emitting element has an average color rendering index (Ra) of 85 or more, which means that each light emitting element has desirable color rendering, and since duv is small, the light emitting element is suitably used for illumination. In addition, the light emitting element 2 has a color temperature of 4710K, which is a day white, and the light emitting element 3 has a color temperature of 2950K, which is an incandescent color. This indicates that the light-emitting elements 2 and 3 have characteristics conforming to the standard.

The difference between the light emitting device 2 and the light emitting device 3 is only in the mixing ratio of materials for forming the second light emitting layer 113b. In other words, this embodiment shows that white light emission in a wide color temperature range of 2950K to 4710K can be obtained by adjusting the mixing ratio of the materials, which is a simple method. In addition, a color temperature of 2950K or less and 4710K or more can be obtained by adjusting. It is also an important feature that light emission in a wide color temperature range was obtained without significantly lowering the efficiency. In this embodiment, the case of white light emission will be described since light emitting elements emitting light of three colors of blue, green, and red, respectively, were manufactured. When a light emitting device emitting light of another color is manufactured, the mixing ratio of light emission can be controlled, and a desired emission color can be easily obtained by adjusting the mixing ratio of materials included in the light emitting device.

As described above, the light-emitting device 2 and the light-emitting device 3 have a very good balance, have desirable characteristics, and can be manufactured easily and inexpensively. The above results are attributed to the following: by using the exciplex as the energy donor of the phosphorescent layer, the diffusion of excitons is suppressed, the non-luminescent attenuation of triplet excitation energy is reduced, and the luminous efficiency is increased by the triplet of the host material in the fluorescent layer. This was enhanced by the generation of delayed fluorescence due to anti-triplet extinction.

(Example 3)

In this embodiment, a method for manufacturing the light emitting element 4 of one embodiment of the present invention and their characteristics will be described. In the light emitting element 4, the first light emitting layer 113a was formed on the cathode side, and the second light emitting layer 113b was formed on the anode side. The structural formula of the organic compound used for the light emitting element 4 is shown below.

<img file="KR102403208B1_D0005.tif" />

(Method of manufacturing light emitting element 4)

A film of indium tin oxide (ITSO) containing silicon oxide was formed on the glass substrate to a thickness of 110 nm by sputtering to form the first electrode 101 . The electrode area was 2 mm x 2 mm.

Next, in the pretreatment for forming the light emitting device on the substrate, the surface of the substrate was washed with water, baked at 200° C. for 1 hour, and then UV ozone treatment was performed for 370 seconds.

After this, press the substrate to about 10^-4It was transferred to a vacuum deposition apparatus reduced to Pa, and vacuum baking was performed at 170° C. for 30 minutes in a heating chamber of the vacuum deposition apparatus, and then cooled for about 30 minutes.

Then, the substrate provided with the first electrode 101 was fixed to the substrate holder provided in the vacuum deposition apparatus so that the side on which the first electrode 101 was formed was facing down. The pressure in the vacuum deposition apparatus is about 10^-4reduced to Pa. Thereafter, 4,4',4"-(benzene-1,3,5-triyl)tri(dibenzothiol) represented by the structural formula (i) on the first electrode 101 by a vapor deposition method using resistance heating Offen) (abbreviation: DBT3P-II) and molybdenum (VI) oxide were deposited by a co-evaporation method to form a hole injection layer 111. This thickness was set to 40 nm, and DBT3P for molybdenum oxide The weight ratio of -II was adjusted to 4:2 (=DBT3P-II: molybdenum oxide).

Next, on the hole injection layer 111,<i>N</i>-(1,1'-biphenyl-4-yl)-<i>N</i>-[4-(9-phenyl-9<i>H</i>-carbazol-3-yl)phenyl]-9,9-dimethyl-9<i>H</i>-Fluoren-2-amine (abbreviation: PCBBiF) was deposited to a thickness of 20 nm to form a hole transport layer 112 .

On the hole transport layer 112, 2-[3'-(dibenzothiophen-4-yl)biphenyl-3-yl]dibenzo[<i>f</i>,<i>h</i>]quinoxaline (abbreviation: 2mDBTBPDBq-II), PCBBiF, and (dipivaloylmethanato)bis(2,3,5-triphenylpyrazinato)iridium(III) (abbreviation: [Ir(tppr)₂(dpm)]) to PCBBiF and [Ir(tppr)₂(dpm)] weight ratio of 2mDBTBPDBq-II to 0.2:0.8:0.05 (=2mDBTBPDBq-II:PCBBiF:[Ir(tppr)₂(dpm)]) to a thickness of 20 nm by a co-deposition method to form a first phosphorescent layer (second light emitting layer 113b)-1, and then 2mDBTBPDBq-II, PCBBiF, and bis[2-(6-<i>tert</i>-Butyl-4-pyrimidinyl-k<i>N</i>3) phenyl-k<i>C</i>](2,4-pentane dionato-k²O,O') iridium (III) (abbreviation: [Ir(tBuppm)₂(acac)]) to PCBBiF and [Ir(tBuppm)₂The weight ratio of 2mDBTBPDBq-II to (acac)] is 0.3:0.7:0.05 (=2mDBTBPDBq-II:PCBBiF:[Ir(tBuppm)₂(acac)]) to a thickness of 5 nm by a co-deposition method to form a second phosphorescent layer (second light emitting layer 113b)-2. Accordingly, the second light emitting layer 113b, which is a phosphorescent layer, was formed. Thereafter, 7-[4-(10-phenyl-9-anthryl)phenyl]-7 represented by the structural formula (iii)<i>H</i>-Dibenzo[<i>c</i>,<i>g</i>]carbazole (abbreviation: cgDBCzPA) and structural formula (iv)<i>N</i>,<i>N</i>'-bis(3-methylphenyl)-<i>N</i>,<i>N</i>'-bis[3-(9-phenyl-9)<i>H</i>-Fluoren-9-yl)phenyl]-pyrene-1,6-diamine (abbreviation: 1,6mMemFLPAPrn) is thick so that the weight ratio of cgDBCzPA to 1,6mMemFLPAPrn is 1:0.04 (=cgDBCzPA:1,6mMemFLPAPrn) A first light emitting layer 113a, which is a fluorescent layer, was formed by depositing it at 25 nm by a co-evaporation method. Through the above-described process, the light emitting layer 113 was formed.

In addition, 2mDBTBPDBq-II and PCBBiF form an exciplex in the second light-emitting layer 113b, which is a phosphorescent layer. This emission wavelength is [Ir(tppr)₂(dpm)] and [Ir(tBuppm)₂(acac)]) overlaps with the absorption band on the longest wavelength side, so the energy transfer efficiency is high.

In the fluorescent layer (the first light emitting layer 113a), the singlet excitation energy of cgDBCzPA as the host material is higher than the singlet excitation energy of 1,6mMemFLPAPrn as the fluorescent material. In addition, the triplet excitation energy of cgDBCzPA is lower than that of 1,6mMemFLPAPrn. Therefore, in the phosphorescent layer (the first light emitting layer 113a), regeneration and light emission of singlet excitons according to triplet-triplet annihilation are easily obtained.

Thereafter, on the first light emitting layer 113a, which is a fluorescent layer, cgDBCzPA was deposited to a thickness of 10 nm, and vasophenanthroline (abbreviation: BPhen) represented by the structural formula (VII) was deposited to a thickness of 15 nm to form an electron transport layer 114. formed.

After the formation of the electron transport layer 114 , lithium fluoride (LiF) was deposited to a thickness of 1 nm by vapor deposition to form the electron injection layer 115 . Finally, aluminum was deposited by vapor deposition to a thickness of 200 nm to form a second electrode 102 serving as a cathode. Through the above-described process, the light emitting device 1 of this embodiment was manufactured. In addition, in all of the above-described deposition processes, deposition was performed by a resistance heating method.

Table 3 shows the device structure of the light emitting device 4 .

In a glove box under a nitrogen atmosphere, the light emitting element 4 was sealed with a glass substrate so as not to be exposed to the atmosphere (in particular, a sealant was applied to the outer edge of the element, and at the same time as sealing, UV treatment was first performed, and then heat treatment was performed at 80° C. was carried out for 1 hour). After that, the characteristics of the light emitting device 4 were measured at 2.5 mA/cm²At a current density of 1000 cd/cm² It was measured in the vicinity.

<tables num="3"><table><tgroup cols="7"><colspec align="justify" colname="col1" colnum="1" colwidth="1957" /><colspec align="justify" colname="col2" colnum="2" colwidth="1213" /><colspec align="justify" colname="col3" colnum="3" colwidth="2003" /><colspec align="justify" colname="col4" colnum="4" colwidth="1250" /><colspec align="justify" colname="col5" colnum="5" colwidth="1743" /><colspec align="justify" colname="col6" colnum="6" colwidth="1533" /><colspec align="justify" colname="col7" colnum="7" colwidth="2292" /><tbody><row><entry align="justify" colname="col1" /><entry align="justify" colname="col2">Voltage (V)</entry><entry align="justify" colname="col3">Correlated color temperature (K)</entry><entry align="justify" colname="col4">duv</entry><entry align="justify" colname="col5">Average color rendering index Ra</entry><entry align="justify" colname="col6">Power Efficiency (lm/W)</entry><entry align="justify" colname="col7">External quantum efficiency (%)</entry></row><row><entry align="justify" colname="col1">light emitting element 4</entry><entry align="justify" colname="col2">2.7</entry><entry align="justify" colname="col3">2690</entry><entry align="justify" colname="col4">0.01</entry><entry align="justify" colname="col5">84</entry><entry align="justify" colname="col6">29</entry><entry align="justify" colname="col7">11</entry></row></tbody></tgroup></table></tables>

Light emitting element 4 does not have a special light extraction structure, but light emitting element 4 has high external quantum efficiency and power efficiency. In addition, the voltage of the light-emitting device 4 was very low at 2.7V compared to the tandem light-emitting device.

20 shows the emission spectrum of the light emitting device 4 . As can be seen from the emission spectrum, [Ir(tppr)₂(dpm)] derived from red emission, [Ir(tBuppm)₂(acac)] and blue emission from 1,6mMemFLPAPrn were observed. This indicates that sufficient light emission is obtained from both the first light-emitting layer 113a as the fluorescent layer and the second light-emitting layer 113b as the phosphorescent layer.

In addition, light-emitting element 4 has an average color rendering index (Ra) of 84, which means that light-emitting element 4 has desirable color rendering, and since duv is small, light-emitting element 4 is suitably used for lighting. In addition, the light-emitting element 4 had a color temperature of 2690K, which is a light bulb color. This indicates that the light emitting element 4 has characteristics conforming to the standard.

As described above, the light emitting element 4 is well-balanced, has desirable characteristics, and can be manufactured easily and inexpensively. The above results are attributed to the following: by using the exciplex as the energy donor of the phosphorescent layer, the diffusion of excitons is suppressed, the non-luminescent attenuation of triplet excitation energy is reduced, and the luminous efficiency is increased by the triplet of the host material in the fluorescent layer. This was enhanced by the generation of delayed fluorescence due to anti-triplet extinction. It has also been found that desirable properties can be obtained even if the stacking order of the light emitting layers 113 is changed.

101 first electrode 102 second electrode 103 EL layer 111 hole injection layer 112 hole transport layer 113 light emitting layer 113a first light emitting layer 113b second light emitting layer 114 electron transport layer 115 : electron injection layer, 400: substrate, 401: first electrode, 403: EL layer, 404: second electrode, 405: encapsulant, 406: encapsulant, 407: sealing substrate, 412: pad, 420: IC chip; 501 first electrode 502 second electrode 511 first light emitting unit 512 second light emitting unit 513 charge generating layer 601 driving circuit unit (source line driving circuit) 602 pixel unit 603 Driving circuit portion (gate line driving circuit), 604 sealing substrate, 605 sealing material, 607 space, 608 wiring, 609 flexible printed circuit (FPC), 610 element substrate, 611 switching FET, 612 current control FET, 613: first electrode, 614: insulator, 616: EL layer, 617: second electrode, 618: light emitting element, 623: n-channel FET, 624: p-channel FET, 625: desiccant, 901: housing, 902: liquid crystal layer, 903: backlight unit, 904: housing, 905: Driver IC, 906: terminal, 951: substrate, 952: electrode, 953: insulating layer, 954: barrier layer, 955: EL layer, 956: electrode, 1001: substrate, 1002: underlying insulating film, 1003: gate insulating film, 1006: Gate electrode, 1007: gate electrode, 1008: gate electrode, 1020: first interlayer insulating film, 1021: second interlayer insulating film, 1022: electrode, 1024W: first electrode of light emitting element, 1024R: first electrode of light emitting element, 1024G : first electrode of light emitting element, 1024B: first electrode of light emitting element, 1025: barrier rib, 1028: EL layer, 1029: second electrode of light emitting element, 1031: sealing substrate, 1032: sealing agent, 1033: transparent base material; 1034R: Red colored layer, 1034G green colored layer, 1034B blue colored layer, 1035 black layer (black matrix), 1036 overcoat layer, 1037 third interlayer insulating film, 1040 pixel portion, 1041 driving circuit portion, 1042 peripheral portion , 2001: housing, 2002: light source, 3001: lighting device, 5000: display area, 5001: display area, 5002: display area, 5003: display area, 5004: display area, 5005: display area, 7101: housing, 7103: Display unit, 7105: stand, 7107: display unit, 7109: operation key, 7110: remote controller, 7201: main body, 7202: housing, 7203: display, 7204: keyboard, 7205: external connection port, 7206: pointing device, 7210: second 2 display part, 7301 housing, 7302 housing, 7303 joint part, 7304 display part, 7305 display part, 7306 speaker part, 7307 recording medium insertion part, 7308: LED lamp, 7309 operation key, 7310 connection terminal, 7311 sensor, 7401 housing, 7402 display unit, 7403 operation button, 7404 external connection port, 7405 speaker, 7406 microphone, 7400 mobile phone, 9033 : clip, 9034: switch, 9035: power switch, 9036: switch, 9038: operation switch, 9630: housing, 9631: display unit, 9631a: display unit, 9631b: display unit, 9632a: touch screen area, 9632b: touch screen area, 9633 : solar cell, 9634: charge/discharge control circuit, 9635: battery, 9636: DC-DC converter, 9637: operation key, 9638: converter, and 9639: button. This application is a Japanese patent application with serial number 2013-174560 filed with the Japan Patent Office on August 26, 2013, a Japanese patent application with serial number 2013-249449 filed with the Japan Patent Office on December 2, 2013, and 2014 It is based on the Japanese patent application of serial number 2014-112119 for which it applied to the Japan Patent Office on May 30, and is incorporated herein by reference in its entirety.