Measuring device and method, processing device and method, pattern forming device and method, exposing device and method, and device fabricating method

Measurement apparatus and method, processing apparatus and method, pattern forming apparatus and method, exposure apparatus and method, and device manufacturing method TECHNICAL FIELD METHOD}

The present invention relates to a measuring apparatus and method, a processing apparatus and method, a pattern forming apparatus and method, an exposure apparatus and method, and a device manufacturing method. A measuring device and a measuring method, a processing device and a processing method for performing a predetermined process on an object mounted on a moving body moving in a plane, a pattern forming device including the measuring device or the processing device, and the measuring method It relates to a pattern forming method, an exposure apparatus and an exposure method for exposing an object to an energy beam through an optical system, and a device manufacturing method using any one of the measurement method, the processing method, the exposure apparatus, and the exposure method.

Conventionally, in a lithography process for manufacturing electronic devices (microdevices) such as semiconductor elements (integrated circuits, etc.) and liquid crystal display elements, a step-and-repeat reduction projection exposure apparatus (so-called stepper) and a step-and-scan projection exposure apparatus (a so-called scanning stepper (also called a scanner)) is mainly used.

By the way, the surface of the wafer as the to-be-exposed substrate is not necessarily flat due to, for example, the wave of the wafer. For this reason, especially in a scanning exposure apparatus such as a scanner, when a reticle pattern is transferred to a certain shot area on the wafer by a scanning exposure method, the wafer surface at a plurality of detection points set in the exposure area in the optical axis direction of the projection optical system The position information (focus information) is detected using, for example, a multi-point focus position detection system (hereinafter also referred to as a "multi-point AF system" ), etc., and based on the detection result, the wafer surface is detected within the exposure area. In order to always coincide with the image plane of the projection optical system (to be within the range of the depth of focus of the image plane), so-called focus leveling control, which controls the position and inclination in the optical axis direction of a table or stage holding a wafer, is performed (for example, , see Patent Document 1).

On the other hand, in a stepper or scanner, the wavelength of exposure light used along with the miniaturization of integrated circuits is shortened year by year, and the numerical aperture of the projection optical system is also gradually increasing (larger NA), thereby improving the resolution. On the other hand, since the depth of focus became very narrow due to the shorter wavelength of the exposure light and the larger NA of the projection optical system, there was a fear that the focus margin during the exposure operation would be insufficient. Therefore, as a method of substantially shortening the exposure wavelength and substantially increasing (widening) the depth of focus compared to air, an exposure apparatus using an immersion method has recently attracted attention (refer to Patent Document 2).

However, in an exposure apparatus using this immersion method or in other exposure apparatuses with a narrow working distance (working distance) between the lower end surface of the projection optical system and the wafer, the above-described multi-point AF system is disposed in the vicinity of the projection optical system. it is difficult On the other hand, in addition to being required to realize high-precision wafer surface position control in order to realize high-precision exposure, the exposure apparatus is required to have high throughput.

In addition, in a stepper or scanner, position measurement of a stage holding a substrate (eg, a wafer) to be exposed is generally performed using a high-resolution laser interferometer. By the way, the optical path length of the laser interference beam for measuring the position of the stage is about several hundred mm or more, and more precise stage position control is required due to the miniaturization of the pattern accompanying the high integration of semiconductor elements. Soon, short-term fluctuations in measured values resulting from temperature fluctuations (air fluctuations) of the atmosphere on the beam optical path of the laser interferometer cannot be ignored.

[Patent Document 1] Japanese Patent Laid-Open No. 6-283403

[Patent Document 2] International Publication No. 2004/053955 Pamphlet

<p>The present invention has been made under the circumstances described above, and from a first point of view, it is a measuring device for measuring position information of a moving object moving within a predetermined plane. an encoder system comprising a plurality of heads each irradiating light and individually receiving reflected light from each grating, and measuring positional information of the movable body in the plane; a plurality of surface position sensors for irradiating light from a direction orthogonal to the plane to the movable body, receiving the reflected light, and measuring position information in a direction orthogonal to the plane of the surface of the movable body at the irradiation point of the light; and a surface position measurement system for measuring position information of the movable body in a direction orthogonal to the plane and in a direction inclined to the plane.</p><p>According to this, the in-plane positional information of the moving object is not affected by air fluctuations by the encoder system with good short-term stability of the measured value and is measured with high precision, and the surface position measurement system in the direction orthogonal to the plane of the moving object The position information is not affected by air fluctuations and is measured with high precision. In this case, since both the encoder system and the surface position measurement system directly measure the surface of the moving object, simple and direct position control of the moving object is possible.</p><p>The present invention, viewed from a second viewpoint, provides a pattern forming apparatus for forming a pattern on an object, comprising: a measuring apparatus of the present invention in which an object is mounted on the moving object; It is a 1st pattern forming apparatus provided with the pattern generating apparatus which generate|occur|produces the said pattern.</p><p>According to this, the in-plane position and in-plane position of the moving body on which the object is mounted, and further, the in-plane position and the in-plane position of the object on the moving body can be controlled with high precision by the measuring device. It becomes possible to form a high-precision pattern on an object with few formation defects.</p><p>The present invention, viewed from a third viewpoint, is a processing apparatus for performing a predetermined process on an object mounted on a movable body moving within a predetermined plane, wherein light is irradiated to the movable body from a direction orthogonal to the plane, and the reflected light a plurality of surface position sensors for receiving light and measuring position information of the surface of the movable body in a direction orthogonal to the plane at the irradiation point of the light; a surface position measurement system for measuring the position information of; a surface position detection device for irradiating a detection beam to the object mounted on the movable body, receiving reflected light of the detection beam, and detecting surface position information at a plurality of detection points on the surface of the object; Let the surface position measurement system and the surface position detection device be in a state of simultaneous operation, and the detection results at the plurality of detection points by the surface position detection apparatus obtained by the simultaneous operation are obtained by the simultaneous operation. It is a processing apparatus provided with the control apparatus which converts into data based on the measurement result in a surface position measurement system.</p><p>Here, "to put into a state of simultaneous operation" is not limited to the case where the surface position measurement system and the surface position detection device are simultaneously started, but also includes the case where both are started back and forth in time. This means that both are operating at the same time.</p><p>According to this, by the control device, the surface position measurement system and the surface position detection device are in a state of simultaneous operation, and the detection results at the plurality of detection points by the surface position detection device obtained by the simultaneous operation are It is converted into data based on the measurement result in the surface position measurement system obtained by the simultaneous operation. Therefore, by acquiring this converted data in advance, the surface position of the object surface is only measured by the surface position measurement system in the direction orthogonal to the plane and the positional information in the inclination direction with respect to the plane. It becomes possible to control the surface position of the upper surface of an object without acquiring information. INDUSTRIAL APPLICABILITY The present invention can be suitably applied to an exposure apparatus having a narrow working distance and the like described above.</p><p>The present invention provides a pattern forming apparatus for forming a pattern on a target object from a fourth viewpoint, comprising: the processing apparatus of the present invention in which the target object is mounted on the movable body; It is a 2nd pattern forming apparatus provided with the pattern generating apparatus which generate|occur|produces the said pattern.</p><p>According to this, since the processing device can control the surface position of the moving body on which the target object is mounted and, by extension, the target object on the moving body with high precision, there is little pattern formation defect caused by the plane position control error on the object. High-precision pattern formation becomes possible.</p><p>The present invention, viewed from a fifth point of view, is a pattern forming apparatus for forming a pattern on an object through an optical system, wherein the object is mounted and the object is held on a plane including a first axis and a second axis intersecting therewith A first grating having a grating whose periodic direction is in a direction parallel to the first axis as a periodic direction and a second grating having a grating having a periodic direction in a direction parallel to the second axis are arranged on one surface thereof while moving within with a movable body; a first head having a plurality of first heads having different positions with respect to a direction orthogonal to the first axis, and measuring positional information in a direction parallel to the first axis of the movable body by a head facing the first grating A second second having an encoder and a plurality of second heads having different positions in a direction orthogonal to the second axis, and measuring positional information in the second axis direction of the movable body by a head opposite to the second grating an encoder system comprising an encoder; a plurality of surface position sensors for irradiating light from a direction perpendicular to the plane to the movable body, receiving the reflected light, and measuring position information in a direction orthogonal to the plane of the surface of the movable body at the irradiation point of the light; a plane position measurement system for measuring position information of the movable body in a direction orthogonal to the plane and in a direction inclined to the plane; It has a plurality of detection points set at predetermined intervals along a straight line in a direction perpendicular to the first axis parallel to the arrangement of the plurality of first heads, and each of the detection beams is irradiated to the plurality of detection points set on the target object. a surface position detection device for detecting surface position information of the surface of the target object at the plurality of detection points by individually receiving reflected light of the detection beam from the target object; Orthogonal to the first axis of the movable body detected by the surface position sensor arranged at least one in the vicinity of each of the two detection points located in the vicinity of both ends of the plurality of detection points of the surface position detection device The surface position information of the object surface is measured using the detection value of the surface position detection device based on the surface position information at the ends of one side and the other side of the direction, and when forming a pattern, the first axis of the movable body On the basis of the surface position information measured by two specific surface position sensors that measure surface position information at the ends of one side and the other side in a direction orthogonal to, based on the measured surface position information, It is a 3rd pattern forming apparatus provided with the adjustment apparatus which adjusts the position of the said object with respect to the direction of an optical axis direction and the inclination with respect to the plane orthogonal to the optical axis.</p><p>According to this, the in-plane positional information of the moving object is not affected by air fluctuations by the encoder system with good short-term stability of the measured value and is measured with high precision, and the surface position measurement system in the direction orthogonal to the plane of the moving object The position is not affected by air fluctuations and is measured with high precision. In addition to this, by the adjusting device, for example, prior to the formation of the pattern, on the basis of the surface position information at the ends of one side and the other side in the direction orthogonal to the first axis of the movable body, the detection value of the surface position detection device is The surface position information of the object surface is measured using the Position adjustment of the object with respect to the inclination direction with respect to the plane orthogonal to an optical axis is performed. Therefore, in spite of measuring the surface position information of an object prior to formation of a pattern, it becomes possible to perform surface position control of an object with high precision when forming an actual pattern.</p><p>The present invention provides an exposure apparatus for exposing an object to an energy beam through an optical system, from a sixth viewpoint, wherein a mounting area for the object is formed on a part of a surface facing the optical system, and the first and the a movable body movable in a second direction; A plurality of sensors each having different positions of detection points in at least one of the first and second directions, and measuring the positional information on the surface of the movable body in a third direction orthogonal to the plane at the plurality of detection points It is a 1st exposure apparatus provided with a possible measurement apparatus.</p><p>According to this, the positional information in the third direction orthogonal to the plane of the surface of the moving object is measured with high accuracy by the measuring device without being affected by the air fluctuations so much.</p><p>According to a seventh aspect of the present invention, there is provided an exposure apparatus for exposing an object to an energy beam through an optical system, comprising: a movable body holding the object and movable in first and second directions within a predetermined plane; a plurality of sensors having different positions of detection points in at least one of the first and second directions, and capable of measuring positional information on the surface of the movable body in a third direction orthogonal to the plane at each of the detection points A second exposure apparatus comprising a measurement device including a first detection system and, unlike the first detection system, a second detection system for measuring positional information in the third direction of the object held by the movable body.</p><p>According to this, by using the first detection system and the second detection system, positional information on the surface of the moving object in the third direction orthogonal to the plane and positional information on the third direction of the object held by the moving object can be obtained. have. By using the obtained positional information relationship, thereafter, the first detection system only measures the positional information of the moving object in the third direction and the inclination direction with respect to the plane, without acquiring the surface positional information of the object surface, It becomes possible to control the surface position of an object.</p><p>The present invention, viewed from an eighth point of view, is a device manufacturing method comprising exposing an object using either one of the first and second exposure apparatuses of the present invention, and developing the exposed object.</p><p>The present invention, viewed from a ninth point of view, is a measurement method for measuring position information of a movable body moving in a plane, wherein a plurality of gratings formed on the movable body and light are respectively irradiated to the plurality of gratings, and a first step of measuring positional information of the movable body in the plane by using an encoder system including a plurality of heads that individually receive reflected light; A surface including a plurality of surface position sensors for irradiating light from a direction orthogonal to the plane to the movable body, receiving the reflected light, and measuring position information in a direction perpendicular to the plane of the surface of the movable body at the irradiation point of the light A measurement method including a second step of measuring position information of the movable body in a direction orthogonal to the plane and an inclination direction with respect to the plane using a position measurement system.</p><p>According to this, using an encoder system with good short-term stability of measured values, the in-plane position of the moving object is not affected by air fluctuations and is measured with high precision, and using the surface position measurement system, in the direction orthogonal to the plane of the moving object. The position is not affected by air fluctuations and is measured with high precision. In this case, since both the encoder system and the surface position measurement system directly measure the upper surface of the moving object, simple and direct position control of the moving object becomes possible.</p><p>According to a tenth point of view, the present invention includes the steps of: measuring position information of the moving object using the measuring method of the present invention in a state in which the object is mounted on the moving object; A pattern forming method comprising the step of forming a pattern on the object by irradiating an energy beam.</p><p>According to this, by the measuring method of the present invention, the in-plane position and in-plane position of the moving body on which the object is mounted, and further, the in-plane position and the in-plane position of the object on the moving body can be controlled with high precision. It becomes possible to form a high-precision pattern on an object with little to no defect in pattern formation.</p><p>The present invention, viewed from a tenth point of view, comprises the steps of: forming a pattern on an object by the pattern forming method of the present invention; It is a device manufacturing method including the process of processing the said object on which the pattern was formed.</p><p>The present invention, viewed from an eleventh point of view, is a processing method for performing a predetermined process on an object mounted on a moving body moving in a plane, wherein the moving body is irradiated with light from a direction orthogonal to the plane, and the reflected light is received and a plurality of surface position sensors for measuring position information of the surface of the movable body in a direction orthogonal to the plane at the irradiation point of the light; a surface position measurement system for measuring information; and a detection beam is irradiated to the object mounted on the movable body to receive reflected light of the detection beam, and surface position information at a plurality of detection points on the surface of the object is detected a first step of setting the surface position detection device to a state of simultaneous operation; Data on the basis of the detection results at the plurality of detection points by the surface position detection device obtained by the simultaneous operation in the first step, and the measurement results in the surface position measurement system obtained by the simultaneous operation It is a treatment method including a second step of converting to .</p><p>According to this, the surface position measurement system and the surface position detection device operate simultaneously (first step), and the detection result at the plurality of detection points by the surface position detection device obtained by the simultaneous operation is the simultaneous operation It is converted into data based on the measurement result obtained by the above-mentioned surface position measurement system (second step). Therefore, by acquiring this converted data in advance, the surface position information of the object surface is only measured by the surface position measurement system in the direction orthogonal to the plane of the moving object and the position information in the inclination direction with respect to the plane. It becomes possible to control the surface position of the surface of an object without acquiring . INDUSTRIAL APPLICABILITY The present invention can be suitably applied to an exposure apparatus having a narrow working distance and the like described above.</p><p>The present invention, viewed from a twelfth point of view, includes the steps of: forming a pattern on an object by the processing method of the present invention, wherein the predetermined processing includes a processing for forming a pattern on the object; It is a device manufacturing method including the process of processing the said object on which the pattern was formed.</p><p>The present invention provides an exposure method for exposing an object to an energy beam through an optical system, from a thirteenth point of view, wherein a mounting area for the object is formed on a part of a surface facing the optical system, and in a predetermined plane, the first and mounting the object on a movable body movable in a second direction; a measuring device having a plurality of sensors each having different positions of detection points in at least one of the first and second directions, including a step of measuring positional information in a third direction orthogonal to the plane of the surface of the movable body; is the first exposure method.</p><p>According to this, the positional information in the third direction orthogonal to the plane of the surface of the moving object is measured with high accuracy by the measuring device without being affected by the air fluctuations so much.</p><p>The present invention provides an exposure method for exposing an object to an energy beam through an optical system, from a fourteenth point of view, comprising the steps of: mounting the object on a movable body movable in first and second directions within a predetermined plane; a plurality of sensors having different positions of detection points with respect to at least one of the first and second directions, and capable of measuring positional information on the surface of the movable body in a third direction orthogonal to the plane at each of the detection points Using a measuring device including a first detection system and a second detection system that, unlike the first detection system, measures positional information in the third direction of the object held by the movable body, the surface of the movable body and the It is a 2nd exposure method including the process of measuring the positional information of the said 3rd direction of an object.</p><p>According to this, in the second step, using a measurement device including the first detection system and the second detection system, positional information on the surface of the moving object in the third direction orthogonal to the plane and the object held by the moving object It is possible to measure the positional information regarding the third direction of , and the relationship between these positional information.</p><p>The present invention, viewed from a fifteenth aspect, is a device manufacturing method comprising exposing an object using any one of the first and second exposure methods of the present invention, and developing the exposed object.</p>

BRIEF DESCRIPTION OF THE DRAWINGS It is a figure which shows schematically the structure of the exposure apparatus which concerns on one Embodiment. FIG. 2 is a plan view showing the stage device of FIG. 1 . Fig. 3 is a plan view showing the arrangement of various measurement devices (encoders, alignment systems, multi-point AF systems, Z sensors, etc.) included in the exposure apparatus of Fig. 1 . Fig. 4(A) is a plan view showing the wafer stage, and Fig. 4(B) is a schematic side view showing the wafer stage WST in a partial cross section. Fig. 5(A) is a plan view showing the measurement stage, and Fig. 5(B) is a schematic side view showing the measurement stage in a partial cross section. Fig. 6 is a perspective view showing the vicinity of the +X side end portion in Fig. 2 of the X-axis stators 80, 81. 7A to 7D are diagrams for explaining the action of the stopper mechanism. 8 is a block diagram showing a main configuration of a control system of an exposure apparatus according to an embodiment. 9(A) and 9(B) are diagrams for explaining position measurement in the XY plane of a wafer table by a plurality of encoders each including a plurality of heads arranged in an array shape, and transfer of measurement values between the heads; am. 10(A) is a diagram showing an example of the configuration of an encoder, and FIG. 10(B) is a case in which a laser beam LB having a cross-sectional shape elongated in the periodic direction of the grating RG is used as detection light. It is a drawing showing FIG. 11 is a diagram for explaining a scale lattice pitch correction and lattice distortion correction performed in the exposure apparatus according to the embodiment. 12(A) to 12(C) are diagrams for explaining wafer alignment performed in the exposure apparatus according to the embodiment. 13(A) to 13(C) are diagrams for explaining simultaneous detection of marks on the wafer by a plurality of alignment systems while changing the Z position of the wafer table WTB (wafer W) . 14(A) and 14(B) are diagrams for explaining the baseline measurement operation of the primary alignment system. 15(A) and 15(B) are diagrams for explaining the baseline measurement operation of the secondary alignment system performed at the head of the lot. Fig. 16 is a diagram for explaining a baseline check operation of the secondary alignment system performed for every wafer exchange. 17(A) and 17(B) are diagrams for explaining the operation of position adjustment of the secondary alignment system. 18A to 18C are diagrams for explaining focus mapping performed in the exposure apparatus according to the embodiment. 19A and 19B are diagrams for explaining focus calibration performed in the exposure apparatus according to the embodiment. 20(A) and 20(B) are diagrams for explaining offset correction between AF sensors performed in the exposure apparatus according to the embodiment. 21(A) and 21(B) are diagrams for explaining the traverse Z travel correction performed in the exposure apparatus according to the embodiment. Fig. 22 is a diagram showing states of a wafer stage and a measurement stage in a state in which step-and-scan exposure is performed on a wafer on the wafer stage. FIG. 23 is a diagram showing the states of the wafer stage and the measurement stage in the stage where the exposure to the wafer W is finished on the wafer stage WST side. Fig. 24 is a diagram showing the state of both stages immediately after transition from a state in which the wafer stage and the measurement stage are separated from each other to a state in which the two stages are in contact after exposure is completed. 25 is a view showing the states of both stages when the measurement stage moves in the -Y direction and the wafer stage moves toward the unloading position while maintaining the positional relationship of the wafer table and the measurement table in the Y-axis direction; am. Fig. 26 is a diagram showing the states of the wafer stage and the measurement stage when the measurement stage reaches a position where Sec-BCHK (interval) is performed. Fig. 27 is a diagram showing the states of the wafer stage and the measurement stage when the wafer stage is moved from the unloading position to the loading position in parallel with Sec-BCHK (interval) being performed. Fig. 28 is a diagram showing the states of the wafer stage and the measurement stage when the measurement stage is moved to the optimum scram standby position and a wafer is loaded on the wafer table. Fig. 29 is a diagram showing the states of both stages when the measurement stage is in standby at the optimum scram standby position and the wafer stage is moved to a position where the first half of Pri-BCHK processing is performed. 30 is an alignment system (AL1, AL2)₂, AL2₃) is used to show the states of the wafer stage and the measurement stage when the alignment marks laid on the three first alignment shot regions are simultaneously detected. Fig. 31 is a diagram showing states of the wafer stage and the measurement stage when the overall focus calibration process is being performed. 32 is an alignment system (AL1, AL2)₁ ~ AL2₄It is a figure which shows the state of a wafer stage and a measurement stage at the time of simultaneous detection of the alignment mark laid in five 2nd alignment shot areas using ). Fig. 33 is a diagram showing states of the wafer stage and the measurement stage when at least one of the processing of the latter half of Pri-BCHK and the processing of the latter half of focus calibration is being performed. 34 is an alignment system (AL1, AL2)₁ ~ AL2₄) is used to show the states of the wafer stage and the measurement stage when the alignment marks laid on the five third alignment shot regions are simultaneously detected. 35 is an alignment system (AL1, AL2)₂, AL2₃) is a diagram showing the states of the wafer stage and the measurement stage when the alignment marks provided on the three fourth alignment shot regions are simultaneously detected. Fig. 36 is a diagram showing states of the wafer stage and the measurement stage when focus mapping is finished. Fig. 37 is a diagram for explaining a modified example of a head unit in which the arrangement of the Y-head and the Z-sensor is different. Fig. 38 is a diagram for explaining another modified example of the head unit in which the arrangement of the Y-head and the Z-sensor is different. 39 is a flowchart for describing an embodiment of a device manufacturing method. Fig. 40 is a flowchart showing a specific example of step 204 in Fig. 39 .

<b>implementing the invention</b><b> best form for</b>

EMBODIMENT OF THE INVENTION Hereinafter, one Embodiment of this invention is described based on FIGS.

1 schematically shows a configuration of an exposure apparatus 100 according to an embodiment. This exposure apparatus 100 is a scanning exposure apparatus of a step-and-scan method, that is, a so-called scanner. As will be described later, in the present embodiment, the projection optical system PL is formed, and in the following, the direction parallel to the optical axis AX of the projection optical system PL is the Z-axis direction, in a plane orthogonal thereto. The directions in which the reticle and the wafer are relatively scanned are the Y-axis direction, the Z-axis and directions perpendicular to the Y-axis are the X-axis directions, and the X-axis, the Y-axis, and the rotation (tilt) directions about the Z-axis are θx and θy, respectively. , and θz directions will be described.

The exposure apparatus 100 is a reticle holding a reticle R illuminated by an illumination system 10 and an illumination light for exposure from the illumination system 10 (hereinafter referred to as "illumination light" or "exposure light") IL. Stage RST, projection unit PU including projection optical system PL for projecting illumination light IL emitted from reticle R onto wafer W, wafer stage WST, and measurement stage MST A stage device 50 having a , a control system thereof, and the like are provided. A wafer W is mounted on the wafer stage WST.

Illumination system 10 is, for example, as disclosed in Japanese Patent Application Laid-Open No. 2001-313250 (corresponding US Patent Application Laid-Open No. 2003/0025890 specification) or the like, illuminance equalization including a light source and an optical integrator or the like. An illumination optical system having an optical system, a reticle blind, and the like (both not shown) is included. In this illumination system 10, the slit-shaped illumination area IAR on the reticle R defined by the reticle blind (masking system) is illuminated by the illumination light (exposure light) IL with a substantially uniform illuminance. Here, as the illumination light IL, an ArF excimer laser light (wavelength 193 nm) is used as an example. Moreover, as an optical integrator, a fly-eye lens, a rod integrator (internal reflection type integrator), or a diffractive optical element etc. can be used, for example.

On the reticle stage RST, a reticle R having a circuit pattern or the like formed on its pattern surface (lower surface in FIG. 1) is fixed by, for example, vacuum suction. The reticle stage RST can be driven minutely in the XY plane by, for example, a reticle stage drive system 11 (not shown in Fig. 1, see Fig. 8) including a linear motor and the like, and can be driven in the scanning direction (Fig. 1, driving is possible at a scanning speed specified in the Y-axis direction, which is the left-right direction in the paper.

Position information (including rotation information in the θz direction) within the movement plane of the reticle stage RST is obtained by a reticle laser interferometer (hereinafter referred to as a "reticle interferometer") 116, and a movement mirror 15 (actually, the Y axis) Through a Y-moving mirror (or retro reflector) having a reflective surface orthogonal to the direction and an X-moving mirror having a reflective surface orthogonal to the X-axis direction are formed), for example, detection is performed at any time with a resolution of about 0.5 to 1 nm. do. The measurement values of the reticle interferometer 116 are sent to the main controller 20 (not shown in FIG. 1, see FIG. 8). The main controller 20 calculates the positions of the reticle stage RST in the X-axis direction, Y-axis direction, and θz direction based on the measured values of the reticle interferometer 116 , and based on the calculation result, the reticle stage drive system By controlling (11), the position (and velocity) of the reticle stage RST is controlled. In addition, instead of the moving mirror 15, the end face of the reticle stage RST may be mirror-finished to form a reflective surface (corresponding to the reflective surface of the moving mirror 15). In addition, the reticle interferometer 116 may also be capable of measuring position information of the reticle stage RST in at least one of the Z axis, θx, and θy directions.

The projection unit PU is disposed below the reticle stage RST in FIG. 1 . The projection unit PU includes a projection optical system PL having a barrel 40 and a plurality of optical elements held in a predetermined positional relationship within the barrel 40 . As the projection optical system PL, for example, a refractive optical system comprising a plurality of lenses (lens elements) arranged along the optical axis AX parallel to the Z-axis direction is used. The projection optical system PL has, for example, a predetermined projection magnification (eg, 1/4, 1/5, or 1/8, etc.) telecentrically on both sides. For this reason, when the illumination region IAR is illuminated by the illumination light IL from the illumination system 10 , the first surface (object surface) of the projection optical system PL and the pattern surface are arranged to substantially coincide with the reticle R A reduced image of the circuit pattern of the reticle R in the illumination area IAR (reduced image of a part of the circuit pattern) through the projection optical system PL (projection unit PU) by the illumination light IL passing through A region (hereinafter, also referred to as an "exposure region") that is conjugated to the illumination region IAR on the wafer W, on the wafer W having a resist (photosensitive agent) applied thereto, disposed on the second surface (image plane) side thereof (hereinafter also referred to as "exposure region") ( IA) is formed. Although not shown, the projection unit PU is mounted on a barrel base supported by three struts via an anti-vibration mechanism, for example, as disclosed in International Publication No. 2006/038952 pamphlet, projection The projection unit PU may be suspended and supported with respect to a main frame member (not shown) disposed above the unit PU, or a base member on which the reticle stage RST is disposed.

Moreover, in the exposure apparatus 100 of this embodiment, since exposure to which the liquid immersion method is applied is performed, as the numerical aperture NA of the projection optical system PL substantially increases, the aperture on the reticle side becomes large. For this reason, it becomes difficult to satisfy Petzval's condition in the refractive optical system comprised only with a lens, and there exists a tendency for a projection optical system to enlarge. In order to avoid such an enlargement of the projection optical system, a catadioptric system (catadioptric system) including a mirror and a lens may be used. In addition, not only the photosensitive layer but also the protective film (top coat film) etc. which protect the wafer or a photosensitive layer may be formed in the wafer W, for example.

In addition, in the exposure apparatus 100 of the present embodiment, in order to perform exposure to which the liquid immersion method is applied, an optical element closest to the image plane side (wafer W side) constituting the projection optical system PL, in this case, a lens (hereinafter , a nozzle unit 32 constituting a part of the local liquid immersion apparatus 8 is formed so as to surround the periphery of the lower end of the barrel 40 that holds the "tip lens" 191 . In the present embodiment, the nozzle unit 32 is set so that the lower end face thereof is substantially flush with the lower end face of the tip lens 191 as shown in FIG. 1 . In addition, the nozzle unit 32 has a supply port and a recovery port of the liquid Lq, a lower surface on which the wafer W is disposed to face and a recovery port is formed, and a liquid supply pipe 31A and a liquid recovery pipe 31B. and a supply flow path and a recovery flow path respectively connected to each other. As shown in FIG. 3 , the liquid supply pipe 31A and the liquid recovery pipe 31B are inclined at 45° with respect to the X-axis direction and the Y-axis direction in plan view (viewed from above), and the optical axis of the projection optical system PL It is arranged symmetrically with respect to the straight line LV in the Y-axis direction passing through (AX).

To the liquid supply pipe 31A, the other end of a supply pipe (not shown) connected at one end to a liquid supply device 5 (not shown in FIG. 1, see FIG. 8) is connected, and to the liquid recovery pipe 31B, the The other end of a recovery pipe (not shown) having one end connected to the liquid recovery device 6 (not shown in Fig. 1, see Fig. 8) is connected.

The liquid supply device 5 includes a tank of liquid, a pressure pump, a temperature control device, and a valve for controlling supply/stop of the liquid to the liquid supply pipe 31A, and the like. As a valve, it is preferable to use a flow control valve so that it may become possible not only to supply and stop a liquid but to adjust a flow volume, for example. The temperature control device adjusts the temperature of the liquid in the liquid tank to, for example, a temperature about the same as the temperature in a chamber (not shown) in which the exposure apparatus is accommodated. In addition, a tank for supplying a liquid, a pressurization pump, a temperature control device, a valve, etc. do not need to be provided with all of them in the exposure apparatus 100, and at least a part of the exposure apparatus 100 is installed in facilities such as a factory. may be replaced with

The liquid recovery device 6 includes a liquid tank and a suction pump, and a valve for controlling recovery/stop of the liquid through the liquid recovery pipe 31B, and the like. As the valve, it is preferable to use a flow control valve similarly to the valve of the liquid supply device 5 . In addition, it is not necessary to provide all of the tank, suction pump, and valve for recovering the liquid in the exposure apparatus 100, and at least some of them may be replaced by facilities such as a factory in which the exposure apparatus 100 is installed. have.

In the present embodiment, as the above liquid, pure water (hereinafter, simply referred to as "water", except for special cases) through which ArF excimer laser light (light with a wavelength of 193 nm) is transmitted is used. While pure water can be easily obtained in large quantities from a semiconductor manufacturing plant or the like, there is an advantage in that there is no adverse effect on the photoresist and optical lens on the wafer.

The refractive index n of water with respect to ArF excimer laser light is approximately 1.44. In this water, the wavelength of the illumination light IL is shortened to 193 nm x 1/n = about 134 nm.

The liquid supply apparatus 5 and the liquid recovery apparatus 6 each have a controller, and each controller is controlled by the main controller 20 (refer to FIG. 8). The controller of the liquid supply device 5 opens the valve connected to the liquid supply pipe 31A to a predetermined opening degree according to an instruction from the main controller 20, and the tip end through the liquid supply pipe 31A, the supply passage, and the supply port. Water is supplied between the lens 191 and the wafer W. Further, at this time, the controller of the liquid recovery device 6 opens the valve connected to the liquid recovery pipe 31B to a predetermined opening in accordance with an instruction from the main controller 20, the recovery port, the recovery passage, and the liquid recovery pipe Through 31B, water is recovered from between the tip lens 191 and the wafer W into the liquid recovery device 6 (liquid tank). At this time, the main controller 20 includes the controller of the liquid supply device 5 and the liquid recovery device 6 so that the amount of water supplied between the tip lens 191 and the wafer W and the amount of water recovered are always equal. ) to give a command to the controller. Accordingly, a certain amount of liquid (water) Lq (see Fig. 1) is held between the tip lens 191 and the wafer W. In this case, the liquid (water) Lq held between the tip lens 191 and the wafer W is always being replaced.

As is clear from the above description, in this embodiment, the nozzle unit 32, the liquid supply device 5, the liquid recovery device 6, the liquid supply pipe 31A, the liquid recovery pipe 31B, etc. are included, A local liquid immersion device 8 is configured. Further, a part of the local immersion apparatus 8, for example, at least the nozzle unit 32, may be suspended and supported by a main frame (including the aforementioned barrel base plate) that holds the projection unit PU, and is separated from the main frame. You may form in a separate frame member. Alternatively, in the case where the projection unit PU is suspended and supported as described above, the nozzle unit 32 may be suspended and supported integrally with the projection unit PU, but in this embodiment, it is hung independently of the projection unit PU. The nozzle unit 32 is formed in the supported measurement frame. In this case, it is not necessary to support the projection unit PU by hanging.

Further, even when the measurement stage MST is located below the projection unit PU, it is possible to fill water between the measurement table and the tip lens 191, which will be described later, similarly to the above.

In the above description, as an example, it is assumed that the liquid supply pipe (nozzle) and the liquid recovery pipe (nozzle) are each formed one by one, but the present invention is not limited thereto. , for example, as disclosed in International Publication No. 99/49504 pamphlet, it is good also as employ|adopting the structure which has many nozzles. The gist is that as long as a liquid can be supplied between the lowermost optical member (tip lens) 191 constituting the projection optical system PL and the wafer W, the configuration may be any. For example, the liquid immersion mechanism disclosed in International Publication No. 2004/053955 pamphlet or the liquid immersion mechanism disclosed in European Patent Laid-Open No. 1420298 is also applicable to the exposure apparatus of the present embodiment.

Returning to FIG. 1 , the stage apparatus 50 includes a wafer stage WST and a measurement stage MST disposed above the base board 12 , and a Y-axis interferometer for measuring position information of these stages WST and MST. an interferometer system 118 (see Fig. 8) including 16 and 18, an encoder system to be described later used to measure position information of the wafer stage WST during exposure, etc., and stages WST and MST; A driving stage drive system 124 (refer to Fig. 8) and the like are provided.

On the bottom surface of each of the wafer stage (WST) and the measurement stage (MST), a non-contact bearing (not shown), for example, a vacuum preload type air static pressure bearing (hereinafter referred to as an "air pad") is formed at a plurality of points, and these By the static pressure of the pressurized air blown from the air pad toward the upper surface of the base board 12, the wafer stage WST and the measurement stage MST above the base board 12 are non-contact through a clearance of about several micrometers. is supported In addition, the stages WST and MST are two-dimensionally independent in the Y-axis direction (left-right direction in the paper sheet in FIG. 1) and the X-axis direction (the paper orthogonal direction in FIG. 1) by the stage drive system 124. can be driven in any direction.

To describe this in more detail, on the bottom surface, as shown in the plan view of FIG. 2 , a pair of Y-axis stators extending in the Y-axis direction on one side and the other side in the X-axis direction with the base board 12 interposed therebetween ( 86 and 87) are arranged respectively. The Y-axis stators 86 and 87 include, for example, a magnetic pole unit incorporating a permanent magnet group comprising a plurality of sets of N-pole magnets and S-pole magnets arranged alternately and at predetermined intervals along the Y-axis direction. have. In the Y-axis stators 86 and 87, two Y-axis movable elements 82, 84 and 83, 85 are respectively formed in a non-contactingly engaged state. That is, a total of four Y-axis movable elements 82, 84, 83, 85 are inserted into the inner space of the Y-axis stator 86 or 87 having an XZ cross-section U-shape, and the corresponding Y-axis stator ( 86 and 87) are supported in a non-contact manner through, for example, a clearance of about several micrometers via an air pad (not shown), respectively. Each of the Y-axis movers 82, 84, 83, 85 is constituted by, for example, an armature unit incorporating armature coils arranged at predetermined intervals along the Y-axis direction. That is, in this embodiment, the Y-axis linear motor of a moving coil type is comprised by the Y-axis movable elements 82, 84 which consists of an armature unit, and the Y-axis stator 86 which consists of a magnetic pole unit, respectively. Similarly, the Y-axis movable elements 83 and 85 and the Y-axis stator 87 each constitute a moving coil-type Y-axis linear motor. In the following, each of the four Y-axis linear motors is appropriately designated by the same reference numerals as the respective movable elements 82, 84, 83, 85, and the Y-axis linear motor 82, the Y-axis linear motor ( 84), the Y-axis linear motor 83, and the Y-axis linear motor 85 are called.

Of the four Y-axis linear motors, the movers 82 and 83 of the two Y-axis linear motors 82 and 83 are respectively at one end and the other end in the longitudinal direction of the X-axis stator 80 extending in the X-axis direction. It is fixed. Further, the movable elements 84 and 85 of the remaining two Y-axis linear motors 84 and 85 are fixed to one end and the other end of the X-axis stator 81 extending in the X-axis direction. Accordingly, the X-axis stators 80 and 81 are respectively driven along the Y-axis by a pair of Y-axis linear motors 82, 83, 84, 85, respectively.

Each of the X-axis stators 80 and 81 is constituted by, for example, an armature unit in which armature coils arranged at predetermined intervals along the X-axis direction are respectively incorporated.

One X-axis stator 81 is inserted into an opening not shown in the stage body 91 (not shown in Fig. 2, see Fig. 1) constituting a part of the wafer stage WST in an inserted state. A magnetic pole unit having a permanent magnet group consisting of a plurality of sets of N-pole magnets and S-pole magnets arranged alternately and at predetermined intervals along the X-axis direction is formed inside the opening of the stage body 91, for example. has been This magnetic pole unit and the X-axis stator 81 constitute a moving magnet type X-axis linear motor that drives the stage main body 91 in the X-axis direction. Similarly, the other X-axis stator 80 is formed in the inserted state in the opening formed in the stage main body 92 which comprises the measurement stage MST. The same magnetic pole unit as the wafer stage WST side (the stage main body 91 side) is formed inside the said opening of this stage main body 92. As shown in FIG. This magnetic pole unit and the X-axis stator 80 constitute a moving magnet-type X-axis linear motor that drives the measurement stage MST in the X-axis direction.

In this embodiment, each said linear motor which comprises the stage drive system 124 is controlled by the main controller 20 shown in FIG. In addition, each linear motor is not limited to either one of a moving magnet type and a moving coil type, respectively, It can select suitably as needed.

Further, the yaw (rotation in the ?z direction) of the wafer stage WST can be controlled by slightly differentiating the thrust generated by the pair of Y-axis linear motors 84 and 85, respectively. Further, by slightly different thrust force generated by the pair of Y-axis linear motors 82 and 83 respectively, it is possible to control the yaw of the measurement stage MST.

Wafer stage WST is mounted via the stage main body 91 mentioned above and the Z-leveling mechanism (for example, voice coil motor etc.) not shown on the stage main body 91, and the stage main body 91 ) with respect to the Z-axis direction, the θx direction, and the θy direction includes a wafer table WTB that is relatively micro driven. In addition, in FIG. 8, it is shown as the stage drive system 124 including each said linear motor and Z-leveling mechanism.

A wafer holder (not shown) holding the wafer W by vacuum suction or the like is formed on the wafer table WTB. Although the wafer holder may be formed integrally with the wafer table WTB, in this embodiment, the wafer holder and the wafer table WTB are separately constituted, and the wafer holder is attached to the recess of the wafer table WTB by vacuum suction or the like, for example. It is fixed in the buoy. In addition, the upper surface of the wafer table WTB has a surface (liquid-repellent surface) treated for liquid Lq that is substantially flush with the surface of the wafer mounted on the wafer holder, and has an external shape (contour) ) is rectangular, and a plate (liquid-repellent plate) 28 is formed in its central portion with a circular opening one size larger than that of the wafer holder (wafer mounting area). The plate 28 is made of a material with a low coefficient of thermal expansion, for example, glass or ceramics (Zerodua (trade name) manufactured by SCHOTT Corporation), Al₂O₃ or TiC), and a liquid-repellent film is formed on the surface of, for example, a fluororesin material, a fluorine-based resin material such as polytetrafluoroethylene (Teflon (registered trademark)), an acrylic resin material, or a silicone-based resin material. In addition, as shown in the plan view of the wafer table WTB (wafer stage WST) of FIG. 4(A), the plate 28 encloses a circular opening, and the outer shape (contour) of the first liquid repellent is rectangular. It has a region 28a and a second liquid-repellent region 28b in a rectangular frame shape (annular shape) disposed around the first liquid-repellent region 28a. In the first liquid-repellent area 28a, for example, at least a part of the liquid-repellent area 14 protruding from the surface of the wafer during an exposure operation is formed, and the second liquid-repellent area 28b is a scale for an encoder system to be described later. is formed Further, at least a part of the surface of the plate 28 does not have to be flush with the surface of the wafer, that is, it may have a different height. Further, the plate 28 may be a single plate, but in the present embodiment, a plurality of plates, for example, first and second liquid-repellent plates corresponding to the first and second liquid-repellent regions 28a and 28b, respectively, are combined to form a combination. do. In this embodiment, since pure water is used as the liquid Lq as described above, the first and second liquid-repellent regions 28a and 28b are also referred to as first and second water-repellent plates 28a and 28b hereinafter, respectively.

In this case, the exposure light IL is irradiated to the inner first water repellent plate 28a, whereas the exposure light IL is hardly irradiated to the outer second water repellent plate 28b. In view of this, in the present embodiment, the surface of the first water-repellent plate 28a is subjected to a first water-repellent coating that is sufficiently resistant to exposure light IL (in this case, light in the vacuum ultraviolet region). A water-repellent region is formed, and a second water-repellent region is formed on the surface of the second water-repellent plate 28b to which a water-repellent coating is applied, which is inferior in resistance to exposure light IL compared to the first water-repellent region. In general, since it is difficult to apply a water-repellent coating sufficiently resistant to exposure light IL (in this case, light in the vacuum ultraviolet region) on a glass plate, the first water-repellent plate 28a and the second water-repellent plate around the first water-repellent plate 28a as described above Separation into two parts of (28b) is effective. Moreover, it is not limited to this, You may apply two types of water-repellent coatings with different resistance to exposure light IL on the upper surface of the same plate, and you may form a 1st water-repellent area|region and a 2nd water-repellent area|region. In addition, the kind of water-repellent coating may be the same in the 1st and 2nd water-repellent area|region. For example, only one water repellent area may be formed on the same plate.

Further, as is clear from Fig. 4(A), a rectangular notch is formed at the +Y side end of the first water repellent plate 28a in the central portion of the X-axis direction, and this notch and the second water repellent plate 28b The measurement plate 30 is embedded in the inside (inside of the notch) of the rectangular space surrounded by . A reference mark FM is formed in the center of the measurement plate 30 in the longitudinal direction (on the center line LL of the wafer table WTB), and on one side and the other side in the X-axis direction of the reference mark, the reference mark A pair of spatial image measurement slit patterns (slit-shaped measurement patterns) SL are formed in a symmetrical arrangement with respect to the center of the mark. As each spatial image measurement slit pattern SL, as an example, an L-shaped slit pattern having sides along the Y-axis direction and the X-axis direction, or two linear slits extending in the X-axis and Y-axis directions, respectively. patterns, etc. can be used.

And, inside the wafer stage WST below each spatial image measurement slit pattern SL, as shown in FIG. 4(B), an optical system including an objective lens, a mirror, a relay lens, etc. is housed in an L-shape. The case body 36 in the shape is mounted in a partially embedded state while penetrating a part of the inside of the stage body 91 from the wafer table WTB. Although illustration is abbreviate|omitted, the case body 36 is formed in one pair corresponding to the said pair of spatial image measurement slit pattern SL.

The optical system inside the case body 36 guides the illumination light IL that has passed through the spatial image measurement slit pattern SL along an L-shaped path, and emits it toward the -Y direction. In the following, for convenience, the optical system inside the case body 36 is referred to as the light transmission system 36 using the same reference numerals as those of the case body 36 .

Further, on the upper surface of the second water repellent plate 28b, a plurality of grid lines are formed directly at a predetermined pitch along each of its four sides. To describe this in more detail, the Y scale 39Y in the region of one side and the other side in the X-axis direction (left and right sides in Fig. 4A) of the second water repellent plate 28b.₁, 39Y₂) are formed respectively, and this Y scale (39Y₁, 39Y₂) is, for example, a reflective type with the Y-axis direction as the periodic direction in which grid lines 38 having the X-axis direction as the longitudinal direction are formed along the direction parallel to the Y-axis (Y-axis direction) at a predetermined pitch. of a grating (eg, a diffraction grating).

Similarly, in the area of one side and the other side in the Y-axis direction of the second water repellent plate 28b (both upper and lower sides in Fig. 4A), the X scale 39X₁, 39X₂) are formed respectively, and this X scale (39X₁, 39X₂) is a reflection type with the X-axis direction as the periodic direction, in which, for example, grid lines 37 having the Y-axis direction as the longitudinal direction are formed along the direction parallel to the X-axis (X-axis direction) at a predetermined pitch. of a grating (eg, a diffraction grating). As each of the above scales, a reflective diffraction grating RG (FIG. 10(A)) is used on the surface of the second water repellent plate 28b by, for example, a hologram. In this case, grids made of narrow slits or grooves are engraved at predetermined intervals (pitch) as scales on each scale. The type of the diffraction grating used for each scale is not limited, and may be not only mechanically formed with grooves or the like, but may be produced by baking an interference fringe on a photosensitive resin, for example. However, each scale is created by engraving the scale of the diffraction grating, for example, at a pitch between 138 nm and 4 µm, for example, at a pitch of 1 µm on thin-plate-shaped glass. These scales are covered with the aforementioned liquid-repellent film (water-repellent film). In addition, in Fig. 4(A), for convenience of illustration, the pitch of the gratings is shown to be significantly wider than the actual pitch. The same applies to other drawings.

As described above, in the present embodiment, since the second water repellent plate 28b itself constitutes a scale, a glass plate of low thermal expansion is used as the second water repellent plate 28b. However, the present invention is not limited thereto, and a scale member made of a low thermal expansion glass plate with a grid formed therein may be fixed to the upper surface of the wafer table WTB by, for example, a leaf spring (or vacuum suction) so that local expansion and contraction does not occur. In this case, a water-repellent plate with the same water-repellent coating applied to the entire surface may be used instead of the plate 28 . Alternatively, it is also possible to form the wafer table WTB from a material with a low coefficient of thermal expansion. In this case, a pair of Y scales and a pair of X scales may be formed directly on the upper surface of the wafer table WTB.

The -Y end surface and -X end surface of wafer table WTB are mirror-finished, respectively, and the reflection surface 17a and the reflection surface 17b shown in FIG. 2 are formed. The Y-axis interferometer 16 and the X-axis interferometer 126 of the interferometer system 118 (see FIG. 8) (in FIG. 1, the X-axis interferometer 126 is not shown; see FIG. 2) are formed by these reflective surfaces 17a, 17b) respectively, by projecting an interferometer beam (length-length beam) and receiving each reflected light, the reference position of each reflective surface (generally, a fixed mirror is arranged on the side of the projection unit PU, and that is used as the reference plane) The displacement from , that is, positional information in the XY plane of the wafer stage WST is measured, and this measured value is supplied to the main controller 20 . In the present embodiment, as the Y-axis interferometer 16 and the X-axis interferometer 126 , a multi-axis interferometer having a plurality of optical axes is used, and based on the measured values of these Y-axis interferometer 16 and X-axis interferometer 126 . Thus, in addition to the X, Y positions of the wafer table WTB, the main controller 20 includes rotation information in the θx direction (ie, pitching), rotation information in the θy direction (ie rolling), and rotation information in the θz direction. (ie, yaw) can also be measured. However, in this embodiment, the position information (including rotation information in the θz direction) in the XY plane of the wafer stage WST (wafer table WTB) mainly includes the above-described Y scale, X scale, etc. , is measured by an encoder system to be described later, and the measured values of the interferometers 16 and 126 are used as a supplementary in the case of correcting (correcting) long-term fluctuations in the measured values of the encoder system (eg, due to temporal deformation of the scale, etc.) do. In addition, the Y-axis interferometer 16 is used for measuring the Y position of the wafer table WTB in the vicinity of the unloading position and the loading position, which will be described later, for wafer exchange. Further, for example, also in the movement of the wafer stage WST between the loading operation and the alignment operation and/or between the exposure operation and the unloading operation, the measurement information of the interferometer system 118, that is, the direction of 5 degrees of freedom ( At least one of the position information of the X-axis, Y-axis, θx, θy, and θz directions) is used. In addition, the interferometer system 118 is integrally formed with the projection unit PU, of which at least a part (eg, an optical system, etc.) is formed in the main frame holding the projection unit PU, or is suspended and supported as described above. Although it may be formed, it is assumed that it is formed in the measurement frame mentioned above in this embodiment.

In addition, in this embodiment, the wafer stage WST is mounted on the stage main body 91 and the stage main body 91 freely movable in the XY plane, and Z-axis direction with respect to the stage main body 91, θx. Although it is assumed that the wafer table WTB is capable of being driven relatively finely in the direction and θy direction, it is not limited thereto, and a single stage movable in six degrees of freedom may of course be employed as the wafer stage WST. In addition, instead of the reflection surface 17a and the reflection surface 17b, you may provide the moving mirror which consists of a plane mirror in the wafer table WTB. In addition, although the positional information of the wafer stage WST is measured using the reflective surface of the fixed mirror formed in the projection unit PU as a reference surface, the position where the reference surface is arranged is not limited to the projection unit PU. , it is not necessarily necessary to measure the position information of the wafer stage WST using the fixed mirror.

In addition, in the present embodiment, the position information of the wafer stage WST measured by the interferometer system 118 is not used in an exposure operation or an alignment operation which will be described later, but mainly in the calibration operation of the encoder system (that is, the measurement value of the calibration), for example, the measurement information of the interferometer system 118 (that is, at least one piece of position information in the direction of five degrees of freedom) may be used, for example, in an exposure operation and/or an alignment operation or the like. In the present embodiment, the encoder system measures the positional information of the three degrees of freedom of the wafer stage WST, that is, the X-axis, the Y-axis, and the ?z direction. Therefore, in the exposure operation and the like, among the measurement information of the interferometer system 118, a direction different from the measurement direction (X-axis, Y-axis, and θz direction) of the positional information of the wafer stage WST by the encoder system, for example, θx Only the position information regarding the direction and/or θy direction may be used, and in addition to the position information of the different directions, in the same direction as the measurement direction of the encoder system (i.e., at least one of the X-axis, Y-axis and θz direction) You may use location information about In addition, the interferometer system 118 may be able to measure the positional information of the Z-axis direction of the wafer stage WST. In this case, positional information in the Z-axis direction may be used in the exposure operation or the like.

The measurement stage MST includes the above-described stage body 92 and a measurement table MTB mounted on the stage body 92 . Also about the measurement table MTB, it is mounted on the stage main body 92 via the Z-leveling mechanism (not shown). However, it is not limited to this, For example, the measurement table MTB was comprised with respect to the stage main body 92 so that fine movement in the X-axis direction, the Y-axis direction, and the θz direction was possible, so-called coarse movement structure measurement. The stage MST may be employed, or the measurement table MTB is fixed to the stage main body 92, and the stage main body 92 including the measurement table MTB is configured to be drivable in six degrees of freedom directions. do.

Various measurement members are formed in the measurement table MTB (and the stage main body 92 ). As this measurement member, for example, as shown in Figs. 2 and 5(A), an illuminance non-uniformity sensor 94 having a pinhole-shaped light receiving unit that receives illumination light IL on the image plane of the projection optical system PL. , a spatial image measuring instrument 96 that measures a spatial image (projection image) of a pattern projected by the projection optical system PL, and Shack-Hartman disclosed in, for example, International Publication No. 03/065428 pamphlet and the like. Hartman) type wavefront aberration measuring instrument 98 or the like is employed. As the wavefront aberration measuring instrument 98, for example, those disclosed in International Publication No. 99/60361 pamphlet (corresponding European Patent No. 1,079,223) can be used.

As the illuminance non-uniformity sensor 94, the thing of the same structure as that disclosed in Unexamined-Japanese-Patent No. 57-117238 (corresponding specification of U.S. Patent No. 4,465,368) etc. can be used, for example. In addition, as the spatial image measuring instrument 96, the thing of the same structure as that disclosed in Unexamined-Japanese-Patent No. 2002-14005 (corresponding specification of Unexamined-Japanese-Patent No. 2002/0041377) etc. can be used, for example. In addition, although the three measurement members 94, 96, 98 were provided in the measurement stage MST in this embodiment, the kind and/or the number of members for a measurement, etc. are not limited to this. As the measurement member, for example, a transmittance measuring instrument for measuring the transmittance of the projection optical system PL and/or the aforementioned local liquid immersion device 8, such as the nozzle unit 32 (or the tip lens 191), etc. You may use a measuring instrument etc. to observe. Moreover, you may mount the cleaning member etc. which clean the member different from the member for measurement, for example, the nozzle unit 32, the front-end|tip lens 191, etc. on measurement stage MST.

In this embodiment, as can also be seen from Fig. 5(A), the sensors with high frequency of use, the illuminance non-uniformity sensor 94, the spatial image measuring instrument 96, and the like are connected to the center line CL of the measurement stage MST ( on the Y axis) passing through the center. For this reason, in this embodiment, measurement using these sensors can be performed by moving only in the Y-axis direction, without moving the measurement stage MST in the X-axis direction.

Illumination light IL on the image plane of projection optical system PL, disclosed, for example, in Japanese Patent Application Laid-Open No. 11-16816 (corresponding US Patent Application Laid-Open No. 2002/0061469), etc. in addition to each of the above sensors. An illuminance monitor having a light receiving portion having a predetermined area for receiving light may be employed, and it is preferable that the illuminance monitor is also arranged on the center line.

In addition, in the present embodiment, in response to immersion exposure in which the wafer W is exposed with the exposure light (illumination light) IL through the projection optical system PL and the liquid (water) Lq, the illumination light ( Illumination non-uniformity sensor 94 (and illuminance monitor), spatial image meter 96, and wavefront aberration meter 98 used for measurement using IL ) is received. In addition, each sensor may be mounted on the measurement table MTB (and the stage main body 92) only in part of the optical system etc., for example, and the whole sensor is mounted on the measurement table MTB (and the stage main body 92). You may place it.

To the stage main body 92 of the measurement stage MST, as shown in FIG. In addition, in the end face of the stage body 92 on the -Y side, in the vicinity of the central position in the X-axis direction inside the opening of the mounting member 42, the above-described pair of light transmission systems 36 are arranged to be opposed to each other. A pair of light receiving systems 44 are fixed. Each light receiving system 44 is constituted by an optical system such as a relay lens, a light receiving element, for example, a photomultiplier tube, and a case body housing these. 4(B) and 5(B) and the description so far, in the present embodiment, the wafer stage WST and the measurement stage MST are close to each other within a predetermined distance in the Y-axis direction. In (including the contact state), the illumination light IL transmitted through each spatial image measurement slit pattern SL of the measurement plate 30 is guided by each of the above-described light transmitting systems 36, and each of the light receiving systems 44 ) is received by the light receiving element of That is, by the measurement plate 30, the light transmitting system 36 and the light receiving system 44, those disclosed in Japanese Patent Application Laid-Open No. 2002-14005 (corresponding to the specification of U.S. Patent Application Laid-Open No. 2002/0041377) etc. The same, spatial image measuring device 45 (see Fig. 8) is constructed.

On the mounting member 42, a credential bar (hereinafter, abbreviated as "CD bar") 46 as a reference member made of a rod-shaped member having a rectangular cross section is extended in the X-axis direction. This CD bar 46 is kinematically supported on the measurement stage MST by a full kinematic mount structure.

Since the CD bar 46 serves as a prototype (a measurement standard), optical glass ceramics with a low coefficient of thermal expansion, for example, Zerodua (trade name) manufactured by SCHOTT Corporation is employed as a material thereof. The upper surface (surface) of the CD bar 46 is set to have a high flatness to the same extent as that of the so-called reference flat plate. Further, in the vicinity of the ends of one side and the other side of the CD bar 46 in the longitudinal direction, a reference grating (eg, a diffraction grating) 52 having the Y-axis direction as the periodic direction, as shown in FIG. 5A , is provided. ) are formed respectively. The pair of reference gratings 52 are formed in a symmetrical arrangement with respect to the center of the CD bar 46 in the X-axis direction, that is, the aforementioned center line CL, with a predetermined distance (referred to as L).

Further, on the upper surface of the CD bar 46, a plurality of reference marks M are formed in an arrangement as shown in Fig. 5A. The plurality of reference marks M are formed in an arrangement of 3 rows with respect to the Y-axis direction at the same pitch, and the arrangement of each row is formed to be shifted from each other by a predetermined distance with respect to the X-axis direction. As each reference mark M, the two-dimensional mark of the dimension detectable by the primary alignment system and secondary alignment system mentioned later is used. The reference mark M may have a shape (configuration) different from the reference mark FM described above, but in the present embodiment, the reference mark M and the reference mark FM have the same structure, and It has the same structure as the alignment mark. Moreover, in this embodiment, the surface of the CD bar 46 and the surface of the measurement table MTB (it may include the member for measurement mentioned above) are also respectively covered with the liquid-repellent film (water-repellent film).

The +Y cross section and the -X cross section of the measurement table MTB are provided with the same reflective surfaces 19a and 19b as the wafer table WTB described above (refer to Figs. 2 and 5A). The Y-axis interferometer 18 and the X-axis interferometer 130 of the interferometer system 118 (refer to FIG. 8) (in FIG. 1, the X-axis interferometer 130 is not shown; see FIG. 2), these reflective surfaces 19a , 19b), as shown in FIG. 2, by projecting an interferometer beam (square-length beam) and receiving each reflected light, the displacement from the reference position of each reflective surface, that is, the position information of the measurement stage MST ( For example, at least position information in the X-axis and Y-axis directions and rotation information in the θz direction are measured), and this measured value is supplied to the main controller 20 . By the way, as shown in FIG. 2, stopper mechanism 48A, 48B is formed in the X-axis stator 81 and the X-axis stator 80. As shown in FIG. The stopper mechanism 48A is a shock absorber formed in the X-axis stator 81, for example, of an oil damper, as shown in Fig. 6 showing the vicinity of the +X-side end portions of the X-axis stators 80, 81 in a perspective view. It includes a shock absorber 47A as an X-axis stator 80 and a shutter 49A formed at a position (the end face on the -Y side of the +X end portion) opposite to the shock absorber 47A. An opening 51A is formed at a position opposite to the shock absorber 47A of the X-axis stator 80 .

As shown in FIG. 6, the shutter 49A is provided in the -Y side of the opening 51A formed in the X-axis stator 80, For example, it is an arrow by 34A of drive mechanisms containing an air cylinder etc. It can be driven in A, A' directions (Z-axis direction). Accordingly, the opening 51A can be opened or closed by the shutter 49A. The opening/closing state of the opening 51A by the shutter 49A is detected by an opening/closing sensor (not shown in FIG. 6, refer to FIG. 8) formed in the vicinity of the shutter 49A, and the detection result is main control sent to device 20 .

The stopper mechanism 48B is also configured similarly to the stopper mechanism 48A. That is, as shown in FIG. 2, the stopper mechanism 48B opposes the shock absorber 47B formed in the vicinity of the -X end of the X-axis stator 81, and the said shock absorber 47B of the X-axis stator 80. and a shutter 49B formed at a position of Further, an opening 51B is formed in the +Y side portion of the shutter 49B of the X-axis stator 80 .

Here, the action of the stopper mechanisms 48A and 48B will be described with reference to Figs. 7(A) to 7(D), taking the stopper mechanism 48A as a representative example.

As shown in Fig. 7(A), when the shutter 49A is in a state where the opening 51A is blocked, as shown in Fig. 7(B) , the X-axis stator 81 and the X-axis stator 80 are ), the shock absorber 47A and the shutter 49A contact (contact), so that the X-axis stators 80 and 81 cannot approach any more. In this case, as shown in Fig. 7(B), when the head portion 104d fixed to the tip of the piston rod 104a of the shock absorber 47A is most moved to the -Y side (that is, the shock absorber 47A The wafer table WTB and the measurement table MTB do not contact even when the spring (not shown) contracts the most and the overall length is the shortest).

On the other hand, as shown in FIG.7(C), when the shutter 49A is driven downward via the drive mechanism 34A, the opening 51A will be in the opened state. In this case, when the X-axis stators 81 and 80 approach each other, as shown in Fig. 7(D), at least a part of the tip of the piston rod 104a of the shock absorber 47A penetrates into the opening 51A. This makes it possible to bring the X-axis stators 81 and 80 closer to each other than the state shown in Fig. 7B. In the state in which the X-axis stators 81 and 80 are closest to each other, the wafer table WTB and the measurement table MTB (CD bar 46) are brought into contact (or brought close to each other at a distance of about 300 μm). It is possible (see Fig. 14(B) etc.).

The depth (depth) of the opening 51A is the end of the shock absorber 47A and the opening 51A even in the state where the X-axis stators 81 and 80 are closest to each other, as shown in Fig. 7D. You may set so that a gap may be formed between (part corresponded to a bottom), and you may set so that the head part 104d of the piston rod 104a of the shock absorber 47A may contact a terminal part. In addition, even when the X-axis stators 81 and 80 are relatively moved in the X-axis direction, the width of the opening may be set in advance according to the relative movement amount so that the shock absorber 47A and the wall portion of the opening 51A do not come into contact. .

In addition, in this embodiment, although it was assumed that a pair of stopper mechanisms 48A, 48B is provided in the X-axis stator 81 and the X-axis stator 80, only one of the stopper mechanisms 48A, 48B is formed. Alternatively, the stopper mechanism similar to that described above may be provided in the wafer stage WST and the measurement stage MST.

Returning to Fig. 2, a gap detection sensor 43A and a collision detection sensor 43B are formed at the +X end of the X-axis stator 80, and the +X end of the X-axis stator 81 is long in the Y-axis direction. The slender plate-shaped member 41A is protrudingly formed on the +Y side. Moreover, as shown in FIG. 2, the -X end of the X-axis stator 80 is provided with the space|interval detection sensor 43C and the collision detection sensor 43D, and the -X end of the X-axis stator 81 is Y A plate-shaped member 41B long and slender in the axial direction is formed to protrude on the +Y side.

The space|interval detection sensor 43A consists of a transmissive photo sensor (for example, the transmissive photo sensor of LED-PTr), and, as shown in FIG. 6, the U-shaped fixing member 142, and its fixing, for example. and a light emitting portion 144A and a light receiving portion 144B formed on each of a pair of opposing surfaces of the member 142 . According to this space|interval detection sensor 43A, when the X-axis stator 80 and the X-axis stator 81 approach from the state of FIG. 6 further, it is plate-shaped between the light receiving part 144B and the light emitting part 144A. The member 41A is retracted, the light from the light emitting portion 144A is blocked by the lower half of the plate-shaped member 41A, and the amount of light received by the light receiving portion 144B is gradually reduced, and the output current thereof is gradually decreased. . Therefore, the main controller 20 can detect that the space|interval of the X-axis stators 80 and 81 became less than a predetermined distance by detecting the output current.

As shown in FIG. 6, the collision detection sensor 43B includes a U-shaped fixing member 143, a light emitting part 145A and a light receiving part ( 145B). In this case, the light emitting part 145A is arranged at a position slightly higher than the light emitting part 144A of the above-described gap detection sensor 43A, as shown in FIG. It is arranged at a position slightly higher than the light receiving portion 144B of the sensor 43A.

According to the collision detection sensor 43B, the X-axis stators 81 and 80 are further approached, and the wafer table WTB and the CD bar 46 (measuring table MTB) come into contact with each other (or about 300 μm). close to the distance of ), since the upper half of the plate-shaped member 41A is positioned between the light emitting portion 145A and the light receiving portion 145B, the light from the light emitting portion 145A is not incident on the light receiving portion 145B. won't Accordingly, the main controller 20 can detect that both tables are in contact (or close to a distance of about 300 µm) by detecting that the output current from the light receiving unit 145B becomes zero (0).

Further, the gap detection sensor 43C and the collision detection sensor 43D formed in the vicinity of the -X end of the X-axis stator 80 are also configured in the same manner as the gap detection sensor 43A and the collision detection sensor 43B described above. And the plate-shaped member 41B is also comprised similarly to the plate-shaped member 41A mentioned above.

In the exposure apparatus 100 of this embodiment, although illustration is abbreviate|omitted in FIG. 1 from a viewpoint of avoiding the confusion of a drawing, in fact, as shown in FIG. 3, the center of the projection unit PU (projection optical system ( PL) on a straight line LV passing through the optical axis AX of the PL) (which also coincides with the center of the above-described exposure area IA in this embodiment) and a position separated by a predetermined distance from the optical axis to the -Y side A primary alignment system AL1 having a detection center is disposed there. This primary alignment system AL1 is being fixed to the lower surface of the main frame (not shown) via the support member 54. As shown in FIG. A secondary alignment system AL2 in which the detection center is arranged substantially symmetrically with respect to the straight line LV on one side and the other side in the X-axis direction with this primary alignment system AL1 interposed therebetween.₁, AL2₂ with AL2₃, AL2₄) are formed respectively. That is, five alignment systems ((AL1, AL2₁ ~ AL2₄)) whose detection centers are arranged at different positions with respect to the X-axis direction, that is, along the X-axis direction.

Each secondary alignment system (AL2_n) (n = 1 to 4) is the secondary alignment system (AL2)₄), the arm 56 capable of rotational movement within a predetermined angular range in the clockwise and counterclockwise directions in FIG. 3 about the rotational center O as the center._n) (n = 1 to 4) is fixed to the tip (rotational end). In this embodiment, each secondary alignment system (AL2_n) of the arm 56_n), and a part of the remainder is formed in the main frame holding the projection unit PU. Secondary alignment system (AL2)₁, AL2₂, AL2₃, AL2₄) each rotates around the rotational center (O) so that the X position is adjusted. That is, the secondary alignment system (AL2₁, AL2₂, AL2₃, AL2₄) whose detection area (or detection center) is independently movable in the X-axis direction. Therefore, the primary alignment system (AL1) and the secondary alignment system (AL2)₁, AL2₂, AL2₃, AL2₄), the relative position of the detection area with respect to the X-axis direction can be adjusted. In addition, in this embodiment, the secondary alignment system (AL2) by the rotational motion of the arm₁, AL2₂, AL2₃, AL2₄) is to be adjusted, but it is not limited to this, and the secondary alignment system (AL2₁, AL2₂, AL2₃, AL2₄) may be provided with a drive mechanism that reciprocates in the X-axis direction. In addition, the secondary alignment system (AL2₁, AL2₂, AL2₃, AL2₄) may be movable not only in the X-axis direction but also in the Y-axis direction. In addition, each secondary alignment system (AL2_n) is part of the arm (56_n) by means of a sensor not shown, for example an interferometer, or an encoder, etc._n), the positional information of that part fixed to can be measured. This sensor is a secondary alignment system (AL2_n), position information in the X-axis direction of .

Each of the arms (56_n) on the upper surface of the vacuum pad (58_n) (n = 1 to 4) is formed. Also, the arm (56_n) is, for example, a rotational drive mechanism 60 including a motor or the like._n) (n = 1 to 4, not shown in Fig. 3, see Fig. 8), rotational movement is possible according to the instruction of the main controller 20. The main control device 20 has an arm 56_n) after adjusting the rotation of each buffer pad (58_n) to actuate each arm (56_n) is adsorbed and fixed to the main frame (not shown). Thereby, each arm (56_n) after the rotation angle adjustment, that is, the primary alignment system (AL1) and the four secondary alignment systems (AL2).₁ ~ AL2₄) is maintained. In addition, the specific adjustment of the rotation of each arm, that is, four secondary alignment systems (AL2₁ ~ AL2₄A method of adjusting the relative position of ) with respect to the primary alignment system AL1 will be described later.

In addition, the arms of the mainframe (56_n), an electromagnet may be employed instead of the vacuum pad 58 as long as it is a magnetic material.

In this embodiment, the primary alignment system (AL1) and the four secondary alignment systems (AL2)₁ ~ AL2₄), for example, a broadband detection light beam that does not sensitize a resist on a wafer is irradiated to a target mark, and an image of the target mark formed on the light-receiving surface by the reflected light from the target mark and an index (not shown) ( An image processing method FIA (Field Image Alignment) system is used that captures an image of an index pattern on an index plate formed in each alignment system using an image pickup device (CCD or the like) and outputs the imaged signal. Primary alignment system (AL1) and 4 secondary alignment systems (AL2)₁ ~ AL2₄) are supplied to the main controller 20 of FIG. 8 .

Moreover, as each said alignment system, it is not limited to an FIA system, For example, a coherent detection light is irradiated to a target mark, and scattered light or diffracted light generated from the target mark is detected, or from the target mark. It is of course possible to use an alignment sensor that detects by interfering two generated diffracted lights (for example, diffracted light of the same order or diffracted light diffracted in the same direction) alone or in an appropriate combination. In addition, in this embodiment, five alignment systems ((AL1, AL2₁ ~ AL2₄)), but the number is not limited to 5, and may be 2 or more, 4 or less, or 6 or more, and may be an even number instead of an odd number. In addition, in this embodiment, five alignment systems ((AL1, AL2₁ ~ AL2₄)) is fixed to the lower surface of the main frame which holds the projection unit PU via the support member 54, but it is not limited to this, You may form in the measurement frame mentioned above, for example.

In the exposure apparatus 100 of this embodiment, as shown in FIG. 3, in the state which surrounds the circumference|surroundings of the nozzle unit 32 mentioned above from all sides, the four head units 62A-62D of an encoder system are arrange|positioned, have. Although illustration is abbreviate|omitted in FIG. 3 etc. from a viewpoint of avoiding attachment of a drawing, in reality, these head units 62A-62D are suspended from the main frame which holds the above-mentioned projection unit PU via a support member. is fixed in In addition, when projection unit PU is suspended and supported, for example, head units 62A-62D may be suspended and supported integrally with projection unit PU, or may be formed in the above-mentioned measurement frame.

The head units 62A, 62C have the X-axis direction as the longitudinal direction, respectively, on the +X side and the -X side of the projection unit PU, and the optical axis AX symmetrically with respect to the optical axis AX of the projection optical system PL. ) are located approximately equal distances from each other. Further, the head units 62B and 62D have the Y-axis direction as the longitudinal direction, respectively, on the +Y side and the -Y side of the projection unit PU, and are approximately the same distance away from the optical axis AX of the projection optical system PL. is placed.

As shown in FIG. 3 , the head units 62A and 62C are disposed at predetermined intervals on a straight line LH passing through the optical axis AX of the projection optical system PL along the X axis direction and parallel to the X axis. A plurality of (here, six) Y heads 64 are provided. The head unit 62A is the aforementioned Y scale 39Y₁) using a multi-eye Y linear encoder (hereinafter, appropriately referred to as "Y encoder ' or "encoder") 70A (refer to FIG. 8). Similarly, the head unit 62C has the aforementioned Y scale 39Y₂) is used to configure a multi-view (here, 6 eyes) Y encoder 70C (see Fig. 8) for measuring the Y position of the wafer stage WST (wafer table WTB). Here, the distance between the adjacent Y heads 64 (ie, measurement beams) provided by the head units 62A and 62C is the aforementioned Y scale 39Y₁, 39Y₂) is set to be narrower than the width in the X-axis direction (more precisely, the length of the grid line 38 ). In addition, the innermost Y head 64 among the plurality of Y heads 64 included in each of the head units 62A and 62C is disposed as close as possible to the optical axis of the projection optical system PL, so that the projection optical system The PL is fixed to the lower end of the barrel 40 (more precisely, the lateral side of the nozzle unit 32 surrounding the tip lens 191).

As shown in FIG. 3 , the head unit 62B includes a plurality of, in this case, seven X heads 66 arranged at predetermined intervals along the Y-axis direction on the straight line LV. In addition, there are a plurality of head units 62D arranged at predetermined intervals on the straight line LV, 11 in this case (however, in FIG. 3, 3 out of 11 overlapping the primary alignment system AL1 are not shown). of the X head 66 . The head unit 62B is the aforementioned X scale 39X₁), a multi-eye (here, 7 eye) X linear encoder (hereinafter, appropriately referred to as "X encoder" or " encoder") 70B (refer to FIG. 8). In addition, the head unit 62D is the aforementioned X scale 39X₂) is used to configure a multi-view (here, 11 eyes) X encoder 70D (refer to Fig. 8) for measuring the X position of the wafer stage WST (wafer table WTB). In addition, in this embodiment, two X heads 66 of 11 X heads 66 provided in the head unit 62D are equipped with the X scale 39X, for example, at the time of alignment mentioned later.₁), X scale (39X₂) may be opposed to each other at the same time. In this case, the X scale (39X₁) and the X head 66 opposing it, the X linear encoder 70B is constituted, and the X scale 39X₂) and the X head 66 opposing it, the X linear encoder 70D is constituted.

Here, some of the 11 X heads 66, here three X heads, are attached below the support member 54 of the primary alignment system AL1. In addition, the spacing between the adjacent X heads 66 (measurement beams) provided in each of the head units 62B and 62D is the above-mentioned X scale 39X.₁, 139X₂) is set to be narrower than the width in the Y-axis direction (more precisely, the length of the grid line 37 ). In addition, the innermost X head 66 among the plurality of X heads 66 included in each of the head units 62B and 62D is disposed as close as possible to the optical axis of the projection optical system PL, so that the projection optical system It is fixed to the lower end of the barrel of the PL (more precisely, the lateral side of the nozzle unit 32 surrounding the tip lens 191).

In addition, the secondary alignment system (AL2₁) on the -X side of the secondary alignment system (AL2₄) on the +X side of the Y head 64y in which the detection point is disposed on a straight line parallel to the X axis passing through the detection center of the primary alignment system AL1 and substantially symmetrically with respect to the detection center₁, 64y₂) are formed respectively. Y head (64y₁, 64y₂) is set to be substantially equal to the distance L described above. Y head (64y₁, 64y₂) is the Y scale 39Y in the state shown in FIG. 3 where the center of the wafer W on the wafer stage WST is on the straight line LV.₂, 39Y₁) to face each other. In the alignment operation described later, etc., the Y head (64y₁, 64y₂) against the Y scale (39Y₂, 39Y₁) are placed respectively, and this Y head (64y₁, 64y₂) (i.e. these Y heads (64y₁, 64y₂The Y position (and θz rotation) of the wafer stage WST is measured by the Y encoders 70C and 70A constituted by ).

In addition, in the present embodiment, a pair of reference gratings 52 and Y heads 64y of the CD bar 46 are performed during baseline measurement or the like to be described later in the secondary alignment system.₁, 64y₂) are opposite each, and the Y head (64y₁, 64y₂) and the opposing reference grating 52 , the Y position of the CD bar 46 is measured at the position of each reference grating 52 . Hereinafter, the Y heads 64y respectively opposing the reference grating 52₁, 64y₂) is called the Y-axis linear encoders 70E and 70F (refer to FIG. 8).

The measured values of the six linear encoders 70A to 70F described above are supplied to the main controller 20, which, based on the measured values of the linear encoders 70A to 70D, XY of the wafer table WTB While controlling the in-plane position, the rotation of the CD bar 46 in the ?z direction is controlled based on the measured values of the linear encoders 70E and 70F.

In the exposure apparatus 100 of this embodiment, as shown in FIG. 3, it consists of the irradiation system 90a and the light receiving system 90b, for example, Unexamined-Japanese-Patent No. 6-283403 (corresponding US Patent No. 5,448,332). A multi-point focal position detection system (hereinafter, abbreviated as "multi-point AF system") of an oblique incidence system having the same configuration as disclosed in the above specification) is provided. In the present embodiment, as an example, the irradiation system 90a is disposed on the -Y side of the -X end of the above-described head unit 62C, and in a state opposite to this, the +X end of the above-mentioned head unit 62A A light-receiving system 90b is arranged on the -Y side of .

A plurality of detection points of this multi-point AF system 90a, 90b are arranged at predetermined intervals along the X-axis direction on the surface to be inspected. In this embodiment, for example, it is arrange|positioned in a row matrix shape of 1 row M column (M is the total number of detection points) or 2 rows and N columns (N is 1/2 of the total number of detection points). In Fig. 3, the plurality of detection points to which the detection beam is irradiated are not individually shown, but as a long and thin detection area AF extending in the X-axis direction between the irradiation system 90a and the light receiving system 90b. is indicating Since this detection area AF is set so that the length in the X-axis direction is about the same as the diameter of the wafer W, only one scan of the wafer W in the Y-axis direction is enough to cover almost the entire surface of the wafer W can measure the position information (plane position information) in the Z-axis direction. In addition, this detection area AF is the above-described liquid immersion area 14 (exposure area IA) and the alignment systems AL1 and AL2 in the Y-axis direction.₁, AL2₂, AL2₃, AL2₄), it is possible to perform the detection operation in parallel in the multi-point AF system and the alignment system. The multi-point AF system may be formed in a main frame or the like that holds the projection unit PU, but in the present embodiment, it is formed in the above-described measurement frame.

In addition, although it was assumed that a plurality of detection points are arranged in one row M columns or two rows N columns, the number of rows and/or columns is not limited to this. However, when the number of rows is two or more, it is preferable to vary the position of the detection point in the X-axis direction even between different rows. In addition, although it was assumed that the some detection point is arrange|positioned along the X-axis direction. It is not limited to this, You may arrange|position all or part of a some detection point at different positions with respect to a Y-axis direction. For example, you may arrange|position a some detection point along the direction which intersects both of an X-axis and a Y-axis. That is, the plurality of detection points may have different positions at least in the X-axis direction. In addition, although the detection beam was irradiated to a some detection point in this embodiment, you may irradiate a detection beam to the whole area of detection area AF, for example. In addition, the length of the detection area AF in the X-axis direction may not be the same as the diameter of the wafer W. FIG.

The exposure apparatus 100 of the present embodiment is symmetric with respect to the above-described straight line LV in the vicinity of the detection points located at both ends among the plurality of detection points of the multipoint AF system, that is, in the vicinity of both ends of the detection area AF. In the phosphor arrangement, a pair of surface position sensors for Z position measurement (hereinafter abbreviated as "Z sensors") 72a, 72b and 72c, 72d are formed. These Z sensors 72a to 72d are fixed to the lower surface of the main frame (not shown). As the Z sensors 72a to 72d, light is irradiated from above with respect to the wafer table WTB, the reflected light is received, and the Z-axis direction orthogonal to the XY plane of the surface of the wafer table WTB at the irradiation point of the light. As a sensor for measuring the position information of , as an example, an optical displacement sensor (a CD pickup type sensor) having the same configuration as an optical pickup used in a CD drive device or the like is used. Note that the Z sensors 72a to 72d may be formed in the above-described measurement frame or the like.

In addition, the above-described head unit 62C has two straight lines parallel to the straight line LH positioned on one side and the other side with a straight line LH in the X-axis direction connecting the plurality of Y heads 64 interposed therebetween. A plurality of Z sensors 74 (6 each, 12 in total) arranged at predetermined intervals along the_{i, j}) (i = 1, 2, j = 1, 2, ..., 6). In this case, the paired Z-sensor (74_1,j, 74_2,j) is arranged symmetrically with respect to the straight line LH. In addition, multiple pairs (here 6 pairs) of Z sensors 74_1,j, 74_2,j) and the plurality of Y heads 64 are alternately arranged with respect to the X-axis direction. Each Z sensor (74_{i, j}), for example, the same CD pickup type sensor as the Z sensors 72a to 72d described above is used.

Here, each pair of Z sensors 74 in a position symmetrical with respect to the straight line LH_1,j, 74_2,j) is set to be the same as that of the above-described Z sensors 74c and 74d. In addition, one pair of Z sensors (74_1,4, 74_2,4) is located on the same straight line parallel to the Y-axis direction as the Z sensors 72a and 72b.

In addition, the above-mentioned head unit 62A has the above-mentioned plurality of Z sensors 74 with respect to the above-mentioned straight line LV._{i, j}) and a plurality of symmetrically arranged Z-sensors (76_{p, q}) (p = 1, 2, q = 1, 2, ..., 6). Each Z sensor (76_{p, q}), for example, the same CD pickup type sensor as the Z sensors 72a to 72d described above is used. In addition, a pair of Z sensors (76_1,3, 76_2,3) is located on the same straight line in the Y-axis direction as the Z sensors 72c and 72d.

In addition, in FIG. 3, illustration of the measurement stage MST is abbreviate|omitted, and the liquid immersion area formed with the water Lq held between the measurement stage MST and the front-end|tip lens 191 is indicated by the code|symbol 14. In addition, in this FIG. 3, the code|symbol 78 blows dry air temperature-controlled to the predetermined temperature in the vicinity of the beam path of the multipoint AF systems 90a, 90b, as indicated by the white arrow in FIG. 3, for example by a downflow. represents a local air conditioning system. Further, the symbol UP indicates an unloading position at which unloading of the wafer on the wafer table WTB is performed, and the symbol LP indicates the loading position at which the wafer loading onto the wafer table WTB is performed. In this embodiment, the unloading position UP and the loading position LP are set symmetrically with respect to the straight line LV. In addition, the unloading position UP and the loading position LP may be set to the same position.

In FIG. 8, the main structure of the control system of the exposure apparatus 100 is shown. This control system is comprised centering around the main controller 20 which consists of a microcomputer (or a workstation) which controls the whole apparatus. In addition, in FIG. 8, various sensors formed on the measurement stage MST, such as the above-described illuminance non-uniformity sensor 94, spatial image measuring instrument 96, and wavefront aberration measuring instrument 98, are collectively represented as a sensor group 99. have.

In the exposure apparatus 100 of this embodiment configured as described above, the arrangement of the X scale and the Y scale on the wafer table WTB as described above and the arrangement of the X head and the Y head as described above are adopted. In this regard, as illustrated in Figs. 9(A) and 9(B), etc., in the effective stroke range of the wafer stage WST (that is, in the present embodiment, the range to be moved for alignment and exposure operation), it must be X scale (39X₁, 39X₂) and the head units 62B and 62D (X head 66) respectively face each other, and also the Y scale 39Y₁, 39Y₂) and head unit (62A, 62C) (Y head (64)) or Y head (64y₁, 64y₂) are opposite each other. Also, in Figs. 9A and 9B, the heads opposite to the corresponding X-scale or Y-scale are circled and displayed.

For this reason, in the effective stroke range of the wafer stage WST mentioned above, the main controller 20 controls each motor which comprises the stage drive system 124 based on at least three measured values of the encoders 70A-70D. By doing so, positional information (including rotational information in the θz direction) in the XY plane of the wafer stage WST can be controlled with high precision. Since the influence of the air fluctuations on the measured values of the encoders 70A to 70D is negligible compared to the interferometer, the short-term stability of the measured values resulting from the air fluctuation is remarkably better than that of the interferometer. In addition, in this embodiment, according to the effective stroke range of the wafer stage WST, the size of the scale (that is, the formation range of the diffraction grating), etc., the size of the head units 62B, 62D, 62A, 62C (for example, number and/or spacing of heads, etc.) is being set. Therefore, in the effective stroke range of the wafer stage WST, four scales (39X₁, 39X₂, 39Y₁, 39Y₂) respectively face the head units 62B, 62D, 62A, and 62C, but all four scales do not have to face the corresponding head units. For example, the X scale (39X₁, 39X₂) of the one-sided and/or Y scale (39Y₁, 39Y₂) may deviate from the head unit. X scale (39X₁, 39X₂one side of ), or the Y scale (39Y₁, 39Y₂), three scales face the head unit in the effective stroke range of the wafer stage WST when one side of ) deviates from the head unit. possible. Also, the X scale (39X₁, 39X₂) of one-sided and Y scales (39Y₁, 39Y₂) ) deviates from the head unit, since two scales face the head unit in the effective stroke range of the wafer stage WST, the position information in the θ z direction of the wafer stage WST cannot be always measured, but the X axis and location information in the Y-axis direction can be always measured. In this case, the positional control of the wafer stage WST may be performed using together the positional information of the θz direction of the wafer stage WST measured by the interferometer system 118 .

Further, as indicated by a white arrow in FIG. 9A , when the wafer stage WST is driven in the X-axis direction, the Y-head 64 that measures the position of the wafer stage WST in the Y-axis direction is Arrow (e) in Fig. 9(A)₁, e₂), sequentially replaced by a nearby Y head 64 . For example, from a Y head 64 surrounded by a solid circle is replaced by a Y head 64 surrounded by a dotted line. For this reason, the measured values are taken over before and after the replacement. That is, in the present embodiment, in order to perform replacement of the Y head 64 and transfer of the measured values smoothly, as described above, the spacing between the adjacent Y heads 64 provided in the head units 62A and 62C. , Y scale (39Y₁, 39Y₂) is set narrower than the width in the X-axis direction.

Further, in the present embodiment, as described above, the distance between the adjacent X heads 66 provided in the head units 62B and 62D is the above-described X scale 39X.₁, 39X₂) is set to be narrower than the width in the Y-axis direction, so as described above, when the wafer stage WST is driven in the Y-axis direction as indicated by a white arrow in Fig. 9B, the wafer stage WST The X head 66 measuring the position in the X-axis direction of X head 66), and the measurements are taken over before and after the replacement.

Next, the configuration of the encoders 70A to 70F and the like will be described with a representative example of the Y encoder 70A enlarged in FIG. 10A . In this Fig. 10(A), the Y scale (39Y₁), one Y head 64 of the head unit 62A for irradiating the detection light (measurement beam) is shown.

The Y head 64 is roughly divided into three parts: an irradiation system 64a, an optical system 64b, and a light receiving system 64c.

The irradiation system 64a includes a light source that emits laser light LB in a direction forming 45° with respect to the Y-axis and the Z-axis, for example, a semiconductor laser LD, and a laser beam emitted from the semiconductor laser LD ( and a lens L1 disposed on the optical path of LB).

The optical system 64b includes a polarizing beam splitter (PBS) whose separation plane is parallel to the XZ plane, a pair of reflective mirrors (R1a, R1b), lenses (L2a, L2b), and a quarter wave plate (hereinafter, λ/ 4 plates) (WP1a, WP1b), and reflection mirrors R2a, R2b, and the like.

The light receiving system 64c includes a polarizer (analyzer) and a photo detector and the like.

In this Y encoder 70A, the laser beam LB emitted from the semiconductor laser LD enters the polarization beam splitter PBS through the lens L1, and is polarized-separated into two beams LB₁, L. B.₂) becomes Beam (LB) transmitted through a polarizing beam splitter (PBS)₁) is the Y scale (39Y) through the reflection mirror (R1a)₁) reaches the reflective diffraction grating (RG) formed in₂) reaches the reflective diffraction grating RG via the reflective mirror R1b. In addition, "polarization separation" here means separating an incident beam into a P polarization component and an S polarization component.

Beam (LB₁, L. B.₂), a diffracted beam of a predetermined order generated from the diffraction grating RG by irradiation of After being converted to , it is reflected by the reflection mirrors R2b and R2a and passes through the λ/4 plates WP1b and WP1a again, and returns the same optical path as the outgoing path in the reverse direction to reach the polarization beam splitter PBS.

The two beams arriving at the polarizing beam splitter (PBS) each have their polarization directions rotated by 90 degrees with respect to their original directions. For this reason, first the beam LB passing through the polarization beam splitter (PBS)₁) of the first-order diffracted beam of ) is reflected by the polarizing beam splitter (PBS) and is incident on the light receiving system (64c), while the beam LB reflected by the polarizing beam splitter (PBS) first₂), the first-order diffracted beam of the beam (LB) is transmitted through a polarizing beam splitter (PBS).₁) is synthesized on the same axis as the first-order diffracted beam of ) and is incident on the light receiving system 64c.

Then, in the light receiving system 64c, the polarization directions of the two first-order diffracted beams are aligned by the analyzer, and they interfere with each other to become interference light, the interference light is detected by the photodetector, and the It is converted into an electrical signal according to its intensity.

As can be seen from the above description, in the Y encoder 70A, since the optical path lengths of the two interfering beams are very short and almost equal, the influence of air fluctuations can be almost negligible. And, the Y scale (39Y₁) (that is, the wafer stage WST) moves in the measurement direction (in this case, the Y-axis direction), the phase of each of the two beams changes and the intensity of the interference light changes. A change in the intensity of this interference light is detected by the light receiving system 64c, and positional information corresponding to the intensity change is output as a measurement value of the Y encoder 70A. The other encoders 70B, 70C, 70D and the like are configured in the same manner as the encoder 70A. As each encoder, one having a resolution of, for example, about 0.1 nm is used. Moreover, in the encoder of this embodiment, as shown in FIG.10(B), you may use the laser beam LB of the cross-sectional shape extending long in the periodic direction of the grating RG as detection light. In FIG. 10(B) , the beam LB is exaggerated compared to the grating RG, and is shown to be large.

However, the scale of the encoder lacks mechanical long-term stability, such as the diffraction grating being deformed or the pitch of the diffraction grating partially or entirely changed due to thermal expansion or other factors with the lapse of use time. For this reason, since the error included in the measured value increases with the lapse of use time, it is necessary to correct this. Hereinafter, the scale grating pitch correction and the grating distortion correction performed in the exposure apparatus 100 of the present embodiment will be described with reference to FIG. 11 .

In this FIG. 11, reference numerals IBY1 and IBY2 indicate lengthening beams of two optical axes among a plurality of optical axes irradiated from the Y-axis interferometer 16 to the reflective surface 17a of the wafer table WTB, and the symbols IBX1 and IBX2 are The lengthening beams of two optical axes among a plurality of optical axes irradiated from the X-axis interferometer 126 to the reflective surface 17b of the wafer table WTB are shown. In this case, the lengthening beams IBY1 and IBY2 are arranged symmetrically with respect to the straight line LV (corresponding to the straight line connecting the centers of the plurality of X heads 66), and the actual lengthening axis of the Y-axis interferometer 16 is is coincident with the straight line LV. For this reason, according to the Y-axis interferometer 16, the Y position of the wafer table WTB can be measured without Abbe's error. Similarly, the length beams IBX1 and IBX2 are symmetrical with respect to a straight line LH passing through the optical axis of the projection optical system PL, parallel to the X axis (corresponding to the straight line connecting the centers of the plurality of Y heads 64). and the substantially lengthening axis of the X-axis interferometer 126 coincides with a straight line LH passing through the optical axis of the projection optical system PL, parallel to the X-axis. For this reason, according to the X-axis interferometer 16, the X position of the wafer table WTB can be measured without Abbe's error.

First, deformation of the grid lines on the X scale (bending of the grid lines) and correction of the pitch of the grid lines on the Y scale will be described. Here, for simplicity of explanation, it is assumed that the reflective surface 17b is an ideal plane.

First, the main controller 20 drives the wafer stage WST based on the measured values of the Y-axis interferometer 16 and the X-axis interferometer 126 , and as shown in FIG. 11 , the Y scale 39Y₁, 39Y₂) is disposed immediately below the corresponding head units 62A and 62C (at least one head), respectively, and also the Y scale 39Y₁, 39Y₂) (diffraction grating) positions the wafer stage WST at a position where one end on the +Y side coincides with the corresponding head units 62A and 62C, respectively.

Next, the main controller 20 controls the Y-axis interferometer 16 at a low speed such that short-term fluctuations in the measured values of the Y-axis interferometer 16 are negligible and while fixing the measured values of the X-axis interferometer 126 to a predetermined value. ) and Z sensor (74_1,4, 74_2,4, 76_1,3, 76_2,3), while keeping all of the pitching amount, rolling amount, and yaw amount at zero, as indicated by arrow F in FIG. 11 , for example, the Y scale (39Y₁, 39Y₂) (in the effective stroke range described above), the wafer stage WST is moved in the +Y direction until the other end (one end on the -Y side) coincides with the corresponding head units 62A, 62C, respectively. During this movement, the main controller 20 inputs the measured values of the Y linear encoders 70A, 70C and the measured values of the Y-axis interferometer 16 (measured values by the measuring beams IBY1, IBY2) at predetermined sampling intervals, Based on the input measured values, the relationship between the measured values of the Y linear encoders 70A and 70C and the measured values of the Y-axis interferometer 16 is found. That is, the main controller 20 has a Y scale 39Y arranged opposite to the head units 62A and 62C sequentially with the movement of the wafer stage WST.₁, 39Y₂) of the grid pitch (intervals of adjacent grid lines) and correction information of the grid pitch. Correction information can be calculated|required, for example as a correction map etc. which show the relationship between both in the case where the horizontal axis is the measurement value of an interferometer and the vertical axis|shaft is the measurement value of an encoder. Since the measured value of the Y-axis interferometer 16 in this case is obtained when the wafer stage WST is scanned at the extremely low speed described above, not only long-term fluctuation errors, but also short-term fluctuation errors caused by air fluctuations, etc. are mostly not included. , there is no problem even thinking of the error as an accurate value with negligible value. Further, within the above range, as indicated by arrow F' in Fig. 11, the wafer stage WST is moved in the -Y direction, and in the same procedure as above, the Y scale 39Y₁, 39Y₂) of the grid pitch (intervals of adjacent grid lines) and correction information of the grid pitch may be obtained. Here, the Y scale (39Y₁, 39Y₂), the wafer stage WST is driven in the Y-axis direction over a range in which both ends cross the corresponding head units 62A, 62C, but the present invention is not limited thereto. The wafer stage WST may be driven in a range in the Y-axis direction in which the stage WST is moved.

Further, during the movement of the above-described wafer stage WST, the main controller 20 accompanies the movement of the X scale 39X.₁, 39X₂) using the measured values obtained from the plurality of X heads 66 of the head units 62B and 62D sequentially opposed to each other, and the measured values of the interferometer 16 corresponding to each measured value, a predetermined statistical calculation is performed, , correction information for deformation (bending) of the grid lines 37 sequentially opposed to the plurality of X heads 66 are also obtained. At this time, the main controller 20 is, for example, an X scale (39X₁, 39X₂), the measured values (or weighted average values) of a plurality of heads of the head units 62B and 62D sequentially arranged opposite to each other are calculated as correction information for lattice deflection. This is because, when the reflective surface 17b is an ideal plane, in the process of sending the wafer stage WST in the +Y direction or the -Y direction, the same shaking pattern will appear repeatedly, so that in a plurality of X heads 66 This is because, by averaging the acquired measurement data or the like, it is possible to accurately obtain correction information for the deformation (deflection) of the grid lines 37 sequentially opposed to the plurality of X heads 66 .

In addition, when the reflective surface 17b is not an ideal plane, the unevenness|corrugation (deflection) of the reflective surface is measured in advance, and correction data of the bending is calculated|required. Then, instead of fixing the measured value of the X-axis interferometer 126 to a predetermined value when the wafer stage WST is moved in the +Y direction or the -Y direction, based on the correction data, the wafer stage WST ( What is necessary is just to move wafer stage WST exactly in a Y-axis direction by controlling the X position of WST. In this way, the correction information of the lattice pitch of the Y scale and the correction information of the distortion (deflection) of the lattice lines 37 can be obtained exactly as described above. In addition, the measurement data acquired by the plurality of X heads 66 are a plurality of data on the basis of a site having a different reflective surface 17b, and since all heads measure the same deformation (bending) of the grid lines, the above-mentioned averaging, etc. By this, the deflection correction residual of the reflective surface is averaged and approaches the true value (in other words, by averaging the measurement data (deflection information of the grid lines) acquired from a plurality of heads, the influence of the deflection residual can be weakened) has a side effect.

Next, deformation of the grid lines on the Y scale (bending of the grid lines) and correction of the pitch of the grid lines on the X scale will be described. Here, for simplicity of explanation, the reflective surface 17a is assumed to be an ideal plane. In this case, what is necessary is just to implement the process in which the X-axis direction and the Y-axis direction were exchanged with the case of the correction|amendment mentioned above.

That is, the main controller 20 first drives the wafer stage WST, and the X scale 39X₁, 39X₂) are respectively disposed immediately below the corresponding head units 62B and 62D (at least one head), and also the X scale 39X₁, 39X₂) (diffraction grating) positions the wafer stage WST at a position where one end of the +X side (or the -X side) coincides with the corresponding head units 62B and 62D, respectively. Next, the main controller 20 controls the X-axis interferometer 126 at a low speed such that short-term fluctuations in the measured values of the X-axis interferometer 126 are negligible and while fixing the measured values of the Y-axis interferometer 16 to a predetermined value. ), etc., while keeping all of the pitching amount, rolling amount and yaw amount at zero, for example, the X scale (39X₁, 39X₂) (in the effective stroke range described above), move the wafer stage WST in the +X direction until the other end (one end of the -Y side (or the +Y side)) coincides with the corresponding head units 62A, 62C, respectively. (or -X direction). During this movement, the main controller 20 inputs the measured values of the X linear encoders 70B and 70D and the measured values of the X-axis interferometer 126 (measured values by the measuring beams IBX1 and IBX2) at predetermined sampling intervals, What is necessary is just to calculate|require the relationship between the measured value of the X linear encoders 70B, 70D and the measured value of the X-axis interferometer 126 based on the input measured value. That is, the main controller 20 has an X scale 39X arranged to face the head units 62B and 62D sequentially with the movement of the wafer stage WST.₁, 39X₂) and the lattice pitch correction information of the lattice pitch are obtained. Correction information can be calculated|required as a map etc. which show the relationship between both in the case where the horizontal axis is the measurement value of an interferometer and the vertical axis is the measurement value of an encoder, for example by a curve, for example. Since the measured value of the X-axis interferometer 126 in this case is obtained when the wafer stage WST is scanned at the extremely low speed described above, not only long-term fluctuation errors, but also short-term fluctuation errors caused by air fluctuations, etc. Even if you think of it as an accurate value with negligible error, there is no problem.

In addition, during the movement of the wafer stage WST, the main controller 20 accompanies the movement of the Y scale 39Y.₁, 39Y₂) by using the measured values obtained from the plurality of Y heads 64 of the head units 62A and 62C sequentially opposed to each other and the measured values of the interferometer 126 corresponding to each measured value to perform a predetermined statistical calculation, Correction information for deformation (bending) of the grid lines 38 sequentially opposed to the plurality of Y heads 64 is also obtained. At this time, the main controller 20 is, for example, the Y scale 39Y₁, 39Y₂) of the plurality of heads of the head units 62A and 62C sequentially arranged opposite to each other, measured values (or weighted average equations) and the like are calculated as correction information for lattice deflection. This is because, when the reflective surface 17a is an ideal plane, in the process of sending the wafer stage WST in the +X direction or the -X direction, the same shaking pattern will appear repeatedly, so that in the plurality of Y heads 64 This is because, by averaging the acquired measurement data or the like, it is possible to accurately obtain correction information for the deformation (deflection) of the grid lines 38 sequentially opposed to the plurality of Y heads 64 .

Moreover, when the reflective surface 17a is not an ideal plane, the unevenness|corrugation (deflection) of the reflective surface is measured in advance, and correction data of the bending is calculated|required. Then, instead of fixing the measured value of the Y-axis interferometer 16 to a predetermined value when the wafer stage WST is moved in the +X direction or the -X direction, based on the correction data, the wafer stage WST ( What is necessary is just to move wafer stage WST exactly in the X-axis direction by controlling the Y position of WST. In this way, the correction information of the grid pitch of the X scale and the correction information of the deformation (bending) of the grid lines 38 can be obtained exactly as described above.

In this way, the main controller 20 provides the Y scale grid pitch correction information and the grid line 37 distortion (bending) correction information, and the X scale grid at every predetermined timing, for example, every lot. The correction information of the pitch and the correction information of the deformation (deflection) of the grid line 38 are obtained.

Then, during exposure processing of the wafers in the lot, the main controller 20 converts the measured values obtained from the head units 62A and 62C (that is, the measured values of the encoders 70A and 70C) to the Y scale grid pitch correction information and The Y-axis direction position control of the wafer stage WST is performed, correct|amending based on the correction information of the distortion ( breaking) of the grid line 38 mentioned above . Thereby, the Y-axis direction position control of the wafer stage WST is performed using the Y linear encoders 70A and 70C without being affected by the temporal change of the grid pitch of the Y scale and the bending of the grid lines 38 . It becomes possible to carry out with high precision.

In addition, during exposure processing of wafers in the lot, the main controller 20 converts the measured values obtained from the head units 62B and 62D (that is, the measured values of the encoders 70B and 70D) to the X scale grid pitch correction information and The position control in the X-axis direction of the wafer stage WST is performed while correcting it based on the correction information of the deformation (deflection) of the grid lines 38 . Thereby, the X-axis direction position control of the wafer stage WST is performed using the X linear encoders 70B and 70D without being affected by the temporal change of the grid pitch of the X scale and the bending of the grid lines 37 . It becomes possible to carry out with high precision.

In addition, in the above description, the Y scale (39Y₁, 39Y₂), and X scale (39X₁, 39X₂), the correction information of the grid pitch and grid line curvature is acquired, but it is not limited to this, and the Y scale (39Y₁, 39Y₂) and X scale (39X₁, 39X₂), correction information for grid pitch and grid line curvature may be acquired, and for both Y scales (44A, 44C) and X scales (44B, 44D), the grid pitch and grid line curvature may be obtained. Only correction information for any one may be acquired. For example, in the case of acquiring only correction information of the lattice line curvature, the wafer stage WST is set to the Y axis based on the measured values of the Y linear encoders 70A and 70C without using the Y-axis interferometer 16 . The wafer stage WST may be moved in the X-axis direction based on the measured values of the X linear encoders 70B and 70D without moving in the direction or using the X-axis interferometer 126 .

Next, the wafer alignment performed by the exposure apparatus 100 of this embodiment is demonstrated simply using FIG.12(A) - FIG.12(C). In addition, the detail is mentioned later.

Here, an operation in the case where 16 colored shot regions AS on the wafer W in which a plurality of shot regions are formed in the layout (short map) shown in Fig. 12C are used as alignment shot regions will be described. . In addition, illustration of measurement stage MST is abbreviate|omitted in FIG.12(A) and FIG.12(B).

As a premise, the secondary alignment system (AL2₁ ~ AL2₄), in accordance with the arrangement of the alignment shot area AS, the position in the X-axis direction shall be adjusted in advance. In addition, this secondary alignment system (AL2₁ ~ AL2₄) will be described later for a method of adjusting the specific position of .

First, the main controller 20 moves the wafer stage WST whose center of the wafer W is positioned at the loading position LP toward the left obliquely upward in FIG. 12(A), so that the center of the wafer W is Positioning is performed at a predetermined position (alignment start position described later) positioned on the straight line LV. In this case, the movement of the wafer stage WST is performed by the main controller 20 by driving each motor of the stage drive system 124 based on the measured value of the X encoder 70D and the measured value of the Y-axis interferometer 16 . is done In the state positioned at the alignment start position, the control of the position (including θz rotation) in the XY plane of the wafer table WTB on which the wafer W is mounted is controlled by the X scale (39X).₁, 39X₂), two X heads 66 provided by the head units 62D respectively opposed to each other, and the Y scale 39Y₁, 39Y₂) respectively opposite Y heads (64y₂, 64y₁) (four encoders).

Next, the main controller 20 moves the wafer stage WST a predetermined distance in the +Y direction based on the measured values of the four encoders to position the wafer stage WST at the position shown in Fig. 12A, and performs primary alignment. system (AL1), secondary alignment system (AL2)₂, AL2₃), almost simultaneously and individually detects the alignment marks laid on the three first alignment shot areas AS (refer to the star mark in Fig. 12A), and the three alignment systems AL1, AL2₂, AL2₃) and the measurement values of the four encoders at the time of detection are correlated and stored in a memory (not shown). In addition, at this time, the secondary alignment system (AL2) at both ends which does not detect the alignment mark.₁, AL2₄) may not irradiate the detection light to the wafer table WTB (or the wafer), or may irradiate the detection light. Further, in the wafer alignment of the present embodiment, the position of the wafer stage WST in the X-axis direction is set so that the primary alignment system AL1 is arranged on the center line of the wafer table WTB, and this primary The alignment system AL1 detects the alignment mark of the alignment shot region located on the meridian of the wafer. In addition, although alignment marks may be formed inside each shot region on the wafer W, in the present embodiment, a street line (scribe) delimiting a plurality of shot regions of the wafer W is outside of each shot region. It is assumed that an alignment mark is formed on the line).

Next, the main controller 20 moves the wafer stage WST a predetermined distance in the +Y direction, based on the measured values of the four encoders, to the five alignment systems AL1 and AL2.₁ ~ AL2₄) positions the alignment marks laid on the five second alignment shot areas AS on the wafer W at positions where they can be detected almost simultaneously and individually, and the five alignment systems AL1, AL2₁ ~ AL2₄), the five alignment marks are detected almost simultaneously and separately, and the five alignment systems AL1, AL2₁ ~ AL2₄) and the measurement values of the four encoders at the time of detection are correlated and stored in a memory (not shown).

Next, the main controller 20 moves the wafer stage WST a predetermined distance in the +Y direction based on the measured values of the four encoders, and the five alignment systems AL1, AL2₁ ~ AL2₄) positions the alignment marks laid on the five third alignment shot areas AS on the wafer W at positions where they can be detected almost simultaneously and individually, and the five alignment systems AL1, AL2₁ ~ AL2₄) to detect the five alignment marks almost simultaneously and individually (refer to the star mark in Fig. 12(B)), and the five alignment systems AL1, AL2₁ ~ AL2₄) and the measurement values of the four encoders at the time of detection are correlated and stored in a memory (not shown).

Next, the main controller 20 moves the wafer stage WST a predetermined distance in the +Y direction based on the measured values of the four encoders, and the primary alignment system AL1 and the secondary alignment system AL2₂, AL2₃), the alignment marks laid on the three fourth alignment shot areas AS on the wafer W are positioned at positions that can be detected almost simultaneously and individually, and the three alignment systems AL1, AL2₂, AL2₃), the three alignment marks are detected almost simultaneously and individually, and the three alignment systems AL1, AL2₂, AL2₃) and the measurement values of the four encoders at the time of detection are correlated and stored in a memory (not shown).

And the main controller 20 has the measurement value of the said four encoders corresponding to the detection result of a total of 16 alignment marks obtained in this way, and the secondary alignment system AL2_n), statistical calculation is performed using the EGA method disclosed in, for example, Japanese Patent Application Laid-Open No. 61-44429 (corresponding specification of U.S. Patent No. 4,780,617) and the like, and the four encoders (four heads The arrangement of all shot regions on the wafer W in the coordinate system defined by the measurement axis of the unit) (eg, the XY coordinate system having the optical axis of the projection optical system PL as the origin) is calculated.

Thus, in the present embodiment, by moving the wafer stage WST in the +Y direction and positioning the wafer stage WST at four points on the movement path, a total of 16 alignment shot regions AS ), the position information of the alignment marks can be obtained in a remarkably short time compared to the case where the alignment marks of 16 points are sequentially detected by a single alignment system. In this case, for example, alignment systems (AL1, AL2₂, AL2₃) is particularly easy to understand, but in conjunction with the moving operation of the wafer stage WST, these alignment systems AL1 and AL2₂, AL₂₃) respectively detect a plurality of alignment marks arranged along the Y-axis direction, which are sequentially arranged in the detection area (eg, equivalent to the irradiation area of the detection light). For this reason, it is not necessary to move the wafer stage WST in the X-axis direction at the time of the measurement of the said alignment mark.

Further, in this case, by the position of the wafer stage WST in the XY plane (particularly the Y position (ie, the degree of entry of the wafer W with respect to the plurality of alignment systems)), the wafer stage WST is almost simultaneously performed by the plurality of alignment systems. The detection scores (measurement scores) of the alignment marks on the wafer W to be detected are different. For this reason, when moving the wafer stage WST in the Y-axis direction orthogonal to the arrangement direction (X-axis direction) of the plurality of alignment systems, marks at different positions on the wafer W are set at positions of the wafer stage WST. Accordingly, in other words, according to the shot arrangement on the wafer W, a required number of alignment systems can be used for simultaneous detection.

By the way, the surface of the wafer W is not an ideal plane, and it is normal that there exist some unevenness|corrugation. Therefore, in the case of performing simultaneous measurement by the plurality of alignment systems described above only at any position in the Z-axis direction of the wafer table WTB (the direction parallel to the optical axis AX of the projection optical system PL), at least One alignment system has a high probability of detecting an alignment mark in a defocused state. Then, in this embodiment, as follows, the measurement error of the position of the alignment mark resulting from performing detection of an alignment mark in a defocus state is suppressed.

That is, the main controller 20 includes a plurality of alignment systems AL1 and AL2 for each positioning position of the wafer stage WST for detection of the alignment mark in each alignment shot region described above.₁ ~ AL2₄) and the wafer W mounted on the wafer table WTB (wafer stage WST), in the Z-axis direction (focus direction) perpendicular to the XY plane, the relative positional relationship of the stage drive system 124 . A stage drive system 124 to detect each of the alignment marks formed at different positions on the wafer W almost simultaneously by each alignment system corresponding to each alignment mark while changing to a Z leveling mechanism (not shown) constituting a part. (Z leveling mechanism) and alignment system (AL1, AL2)₁ ~ AL2₄) to control

13(A) to 13(C), the wafer stage WST is positioned at the detection position of the alignment mark in the third alignment shot region described above in the state shown in Fig. 12(B). alignment system (AL1, AL2)₁ ~ AL2₄) of the mark detection on the wafer W is shown. 13(A) to 13(C), the wafer table WTB (wafer W) is positioned at different Z positions, respectively, and the alignment systems AL1 and AL2₁ ~ AL2₄) is used to show a state in which different alignment marks are detected almost simultaneously. In the state of Fig. 13(A), the alignment system AL2 at both ends₁, AL2₄) is the focus state, and the remaining alignment systems are in the defocus state. In the state of Fig. 13(B), the alignment system AL2₂, AL2₃) is the focus state, and the remaining alignment systems are in the defocus state. In the state of FIG. 13(C), only the center alignment system AL1 is in a focus state, and the remaining alignment system is in a defocus state.

In this way, by changing the Z position of the wafer table WTB (wafer W), the plurality of alignment systems AL1, AL2₁ ~ AL2₄) and the wafer W mounted on the wafer table WTB (wafer stage WST), while changing the relative positional relationship in the Z-axis direction (focus direction), the alignment systems AL1, AL2₁ ~ AL2₄By performing simultaneous measurement of the alignment mark by ), it becomes possible to measure the alignment mark in almost the best focus state about any alignment system. Therefore, the main controller 20 gives preference to the detection result of the mark in the best focus state for each alignment system, for example, so that the unevenness of the surface of the wafer W and the alignment of the plurality of alignment systems are used. Marks formed at different positions on the wafer W can be detected with high precision without being affected by the best focus difference.

In addition, in the above description, for each alignment system, for example, the detection result of the mark in the best focus state is given priority to use. You may obtain the positional information of an alignment mark using also the detection result of a mark. In this case, the weight according to the defocus state may be multiplied, and the detection result of the mark in the defocus state may also be used. Moreover, for example, depending on the material of the layer formed on a wafer, etc., the detection result of the mark in a defocus state may become favorable rather than the detection result of a mark in a best-focus state. In this case, with respect to each alignment system, you may detect a mark in the focus state from which the best result is obtained, ie, a defocus state, and may obtain|require the positional information of a mark using the detection result.

Also, as can be seen from Figs. 13(A) to 13(C), it cannot be limited that the optical axes of all alignment systems exactly coincide with the same ideal direction (Z-axis direction). An error may be included in the detection result of the position of the alignment mark due to the influence of the inclination (telecentricity) of the optical axis. Therefore, it is preferable to measure the inclinations of the optical axes of all alignment systems with respect to the Z axis in advance, and correct the detection results of the positions of the alignment marks based on the measurement results.

Next, the baseline measurement (baseline check) of the primary alignment system AL1 will be described. Here, the baseline of the primary alignment system AL1 refers to the positional relationship between the projection position of the pattern by the projection optical system PL (for example, the pattern of the reticle R) and the detection center of the primary alignment system AL1. (or distance).

a. When the baseline measurement of this primary alignment system AL1 is started, as shown in FIG. 14(A) , the projection optical system PL, the measurement table MTB, and the CD bar are performed by the nozzle unit 32 . A liquid immersion region 14 is formed between at least one of (46). That is, the wafer stage WST and the measurement stage MST are in the separated state.

In the baseline measurement of the primary alignment system AL1, first, the main controller 20, as shown in FIG. 14(A) , the reference mark FM located in the center of the measurement plate 30 described above is detected (observed) by the primary alignment system AL1 (refer to the star mark in Fig. 14(A)). And the main controller 20 associates the detection result of the primary alignment system AL1 with the measured value of the encoders 70A-70D at the time of the detection, and memorize|stores it in memory. This processing is hereinafter referred to as the processing of the first half of Pri-BCHK for convenience. In the first half of this Pri-BCHK processing, the position in the XY plane of the wafer table (WTB) is on the X scale (39X)₁, 39X₂), two X heads 66 (encoders 70B, 70D) indicated by a circle in Fig. 14(A) opposite to , and a Y scale 39Y₁, 39Y₂) in FIG. 14(A) opposite to the two Y heads (64y₂, 64y₁) (encoders 70A and 70C).

b. Next, the main controller 20 moves the wafer stage WST in the +Y direction so that the measurement plate 30 is positioned immediately below the projection optical system PL, as shown in FIG. 14(B) . to start After the start of movement of the wafer stage WST in the +Y direction, the main controller 20 controls the approach of the wafer stage WST and the measurement stage MST based on the outputs of the gap detection sensors 43A and 43C. Sensing, before and after this, that is, during the movement in the +Y direction of the wafer stage WST, by starting to open the shutters 49A, 49B via the above-described drive mechanisms 34A, 34B and opening the shutters. , allowing additional access to the wafer stage (WST) and metrology stage (MST). Further, the main controller 20 confirms the opening of the shutters 49A and 49B based on the detection result of the opening/closing sensor 101 .

c. Then, the main controller 20, based on the outputs of the collision detection sensors 43B and 43C, causes the wafer stage WST and the measurement stage MST to contact (or close to a distance of about 300 μm). Upon detection, the wafer stage WST is temporarily stopped. Then, the main controller 20 integrally moves the measurement stage MST and the wafer stage WST in the +Y direction while maintaining the contact state (or maintaining a distance of about 300 µm) in the +Y direction. . Then, the liquid immersion region 14 is transferred from the CD bar 46 to the wafer table WTB in the middle of this movement.

d. And when the wafer stage WST arrives at the position shown in Fig. 14(B), the main controller 20 stops both stages WST and MST, and the reticle R projected by the projection optical system PL A projection image (spatial image) of a pair of measurement marks on the image is measured using the above-described spatial image measurement device 45 including the measurement plate 30 . For example, slit scanning using a pair of spatial image measurement slit patterns (SL), similarly to the method disclosed in Japanese Patent Application Laid-Open No. 2002-14005 (corresponding US Patent Application Laid-Open No. 2002/0041377 specification) and the like described above. The spatial image measurement operation of the method measures the spatial images of a pair of measurement marks, respectively, and stores the measurement results (spatial image intensity according to the XY position of the wafer table WTB) in the memory. The measurement processing of the spatial image of the pair of measurement marks on the reticle R is hereinafter referred to as processing of the latter half of Pri-BCHK for convenience. In the second half of this Pri-BCHK processing, the position in the XY plane of the wafer table (WTB) is on the X scale (39X₁, 39X₂) and two X heads 66 (encoders 70B, 70D) shown surrounded by circles in Fig. 14(B) opposite to , Y scale 39Y₁, 39Y₂) is controlled based on two Y heads 64 (encoders 70A and 70C) indicated by a circle in FIG. 14B opposite to FIG. 14B.

Then, the main controller 20 calculates the baseline of the primary alignment system AL1 based on the result of the processing in the first half of the Pri-BCHK and the result of the processing in the second half of the Pri-BCHK described above.

In addition, as described above, at the point in time when the baseline measurement of the primary alignment system AL1 is finished (that is, when the processing of the latter half of the Pri-BCHK is finished), the measurement stage MST and the wafer stage (WST) is in a contact state (or a state separated by a distance of about 300 µm).

Next, the secondary alignment system (AL2) which is mainly performed immediately before the start of processing on wafers in the lot (at the beginning of the lot)_n) (n = 1 to 4) will be described. Here, the secondary alignment system (AL2_n) is the baseline of each secondary alignment system (AL2) based on the primary alignment system (AL1) (the detection center of )._n) (the detection center of ) means the relative position of . In addition, the secondary alignment system (AL2_n) (n = 1 to 4) is, for example, according to the shot map data of the wafers in the lot, the above-described rotational drive mechanism 60_n) and set the position in the X-axis direction.

e. At the time of baseline measurement of the secondary alignment system performed at the head of the lot (hereinafter also referred to as Sec-BCHK as appropriate), the main controller 20 first, as shown in Fig. 15A, the wafer W at the head of the lot. A specific alignment mark on the (process wafer) is detected by the primary alignment system AL1 (refer to the star mark in Fig. 15A), and the detection result is matched with the measurement values of the encoders 70A to 70D at the time of detection. Save to memory. In this state of Fig. 15A, the position in the XY plane of the wafer table WTB is on the X scale (39X)₁, 39X₂) with two X heads 66 (encoders 70B, 70D) opposite to the Y scale (39Y₁, 39Y₂) with two Y heads (64y₂, 64y₁) (encoders 70A, 70C), it is controlled by the main controller 20 .

f. Next, the main controller 20 moves the wafer stage WST in the -X direction by a predetermined distance, and as shown in FIG.₁) is detected (refer to the star mark in Fig. 15B), and the detection result is associated with the measurement values of the encoders 70A to 70D at the time of detection and stored in the memory. In the state of this FIG. 15(B), the position in the XY plane of the wafer table WTB is on the X scale (39X)₁, 39X₂) with two X heads 66 (encoders 70B, 70D) opposite to the Y scale (39Y₁, 39Y₂) is controlled based on two Y heads 64 (encoders 70A and 70C) opposite to each other.

g. Similarly, the main controller 20 sequentially moves the wafer stage WST in the +X direction to move the specific alignment mark to the rest of the secondary alignment system AL2.₂, AL2₃, AL2₄) is sequentially detected, and the detection result and the measurement values of the encoders 70A to 70D at the time of detection are sequentially correlated and stored in the memory.

h. And, the main control device 20, e. The processing results of f. or g. Based on the processing result of each secondary alignment system (AL2_n) to calculate the baseline of each.

In this way, using the wafer W (process wafer) at the head of the lot, the same alignment marks on the wafer W are applied to the primary alignment system AL1 and each secondary alignment system AL2._n) by detecting each secondary alignment system (AL2_n), so that by this process, as a result, the difference in the detection offset between the alignment systems resulting from the process is also corrected. In addition, the secondary alignment system (AL2) using a reference mark on the wafer stage (WST) or the measurement stage (MST) instead of the alignment mark of the wafer_n) may be measured as a baseline. In this case, the reference mark FM of the measurement plate 30 used in the baseline measurement of the primary alignment system AL1, that is, the reference mark FM, is used as the secondary alignment system AL2._n) may be detected separately. Or, for example, secondary alignment system (AL2_n) and n reference marks are formed on the wafer stage (WST) or the measurement stage (MST) in the same positional relationship as the secondary alignment system (AL2)_n) may be enabled to be executed almost simultaneously. As this reference mark, you may use the reference mark M of the CD bar 46, for example. In addition, in a predetermined positional relationship with respect to the reference mark FM for baseline measurement of the primary alignment system AL1, the secondary alignment system AL2_n) is formed on the wafer stage WST, and almost simultaneously with the detection of the reference mark FM by the primary alignment system AL1, and the secondary alignment system AL2_n) may be made executable to detect the reference mark. In this case, the secondary alignment system (AL2_n) may be one reference mark for baseline measurement, but there may be multiple, for example, secondary alignment systems (AL2_n) and may be formed in the same number as . In addition, in this embodiment, the primary alignment system (AL1) and the secondary alignment system (AL2)_n) can detect two-dimensional marks (X, Y marks) respectively, so the secondary alignment system (AL2_n) by using a two-dimensional mark in the baseline measurement of the secondary alignment system (AL2_n) in the X-axis and Y-axis directions can be obtained at the same time. In the present embodiment, the reference marks FM, M and the alignment marks of the wafer include, for example, one-dimensional X and Y marks in which a plurality of line marks are periodically arranged in the X-axis and Y-axis directions, respectively. .

Next, during the processing of wafers in the lot, Sec-BCHK is performed at a predetermined timing, for example, from the end of exposure of the wafer until the loading of the next wafer onto the wafer table (WTB) is completed, that is, during wafer exchange. operation will be described. Since Sec-BCHK in this case is performed at an interval of every wafer exchange, it is also referred to as Sec-BCHK (interval) hereinafter.

At the time of this Sec-BCHK (interval), the main controller 20, as shown in FIG. 16, has substantially the same straight line LV and the center line CL on which the detection center of the primary alignment system AL1 is arranged. coincident, and also the CD bar 46 is a primary alignment system (AL1) and a secondary alignment system (AL2)._n) move the metrology stage MST to face it. Then, a pair of reference gratings 52 on the CD bar 46 and a Y head 64y indicated by a circle in FIG. 16 facing each other₁, 64y₂) (Y-axis linear encoders 70E and 70F), while adjusting the θz rotation of the CD bar 46, located on or near the sensor line CL of the measurement table MTB The XY position of the CD bar 46 is adjusted using, for example, the measured value of the interferometer based on the measured value of the primary alignment system AL1 indicated by a circle in FIG. 16 that detects the reference mark M. FIG.

And in this state, the main controller 20 has four secondary alignment systems AL2₁ ~ AL2₄), by simultaneously measuring the reference mark M on the CD bar 46 within the field of view of each secondary alignment system, the four secondary alignment systems AL2₁ ~ AL2₄) to find the baseline of each. Then, in the subsequent processing, by using the newly measured baseline, four secondary alignment systems (AL2₁ ~ AL2₄) of the baseline drift is corrected.

In addition, although the above-mentioned Seo-BCHK (interval) was performed by simultaneous measurement of different reference marks by a plurality of secondary alignment systems, it is not limited to this, and the same reference mark (M) on the CD bar 46 By sequentially (asynchronously) measuring with a plurality of secondary alignment systems, four secondary alignment systems (AL2₁ ~ AL2₄) may be obtained as a base line, respectively.

Next, based on FIGS. 17(A) and 17(B), the secondary alignment system AL2_n), the operation of the position adjustment will be briefly described.

Before adjustment, the primary alignment system (AL1) and the four secondary alignment systems (AL2)₁ ~ AL2₄It is assumed that the positional relationship of ) is the positional relationship of Fig. 17(A).

As shown in Fig. 17(B) , the main controller 20 includes a primary alignment system AL1 and four secondary alignment systems AL2.₁ ~ AL2₄) moves the measurement stage MST so that it is located above the CD bar 46 . Next, in the same manner as in the case of Sec-BCHK (interval) described above, the Y-axis linear encoders 70E, 70F (Y head 64y₁, 64y₂) based on the measured value of the CD bar 46, while adjusting the θz rotation, the primary alignment for detecting the reference mark M located on or near the center line CL of the measurement table MST The XY position of the CD bar 46 is adjusted based on the measured value of the system AL1. Simultaneously with this, the main controller 20 uses the rotation drive mechanism ( 60₁ ∼ 60₄) to drive each secondary alignment system (AL2_n) rotates the arms 56 formed at the tips thereof as the arrows in Fig. 17(B), respectively, centering on the respective rotation centers. In this case, each secondary alignment system AL2 of the main controller 20_n) while monitoring the detection result of the secondary alignment system AL2, the desired reference mark M on the CD bar 46 is_n), the rotation of each arm 56 is stopped at a position where it enters the field of view (detection area). Accordingly, in accordance with the arrangement of the alignment marks attached to the alignment shot area to be detected, the secondary alignment system (AL2_n) of the baseline is adjusted (changed). That is, the secondary alignment system (AL2_n) of the detection area in the X-axis direction is changed. Thereby, only by moving the wafer W in the Y-axis direction, each secondary alignment system AL2_n), it is possible to sequentially detect a plurality of alignment marks having substantially the same position in the X-axis direction and different positions in the Y-axis direction on the wafer W. In this embodiment, the wafer alignment operation, that is, the primary alignment system (AL1) and the secondary alignment system (AL2)_n) in the wafer alignment mark detection operation, the wafer W is moved one-dimensionally only in the Y-axis direction as described later, but at least one secondary alignment system AL2_n) and the wafer W may be relatively moved in a direction different from the Y-axis direction (for example, the X-axis direction). In this case, the secondary alignment system (AL2_n), the position of the detection region may be adjusted, but only the wafer W may be moved in consideration of the adjustment time, the change in the baseline, and the like.

And in this way, the secondary alignment system (AL2_n), after adjusting the baseline of the main control unit 20, each_n) to actuate each arm (56_n) is adsorbed and fixed to the main frame (not shown). Thereby, each arm (56_n) is maintained after adjusting the rotation angle.

In addition, in the above description, the reference marks M formed at different positions on the CD bar 46 are set by the five alignment systems AL1, AL2.₁ ~ AL2₄) at the same time and individually, it is not limited to this, for example, alignment marks formed at different positions on the wafer W (process wafer) are detected by the five alignment systems AL1, AL2.₁ ~ AL2₄) simultaneously and separately detected in each arm (56_n) by adjusting the rotation of the secondary alignment system (AL2_n), it is also possible to adjust the baseline of In addition, in this embodiment, the secondary alignment system AL2 using the reference mark M of the CD bar 46, etc._n) is adjusted, but the adjustment operation is not limited to this, for example, the secondary alignment system (AL2_n) may be moved to the target position while measuring its position with the above-described sensor. In this case, the secondary alignment system (AL2_n) based on the position or movement amount, correct the baseline measured before movement, or perform baseline measurement again after movement, or at least the secondary alignment system (AL2_n), a sequence in which the baseline measurement is performed after the movement may be employed.

Next, the detection (hereinafter referred to as focus mapping) of positional information (plane positional information) of the surface of the wafer W in the Z-axis direction performed by the exposure apparatus 100 of the present embodiment will be described.

At the time of this focus mapping, as shown in FIG. 18(A), the main controller 20 controls the X scale (39X)₂) opposite the X head 66 (X linear encoder 70D) and the Y scale 39Y₁, 39Y₂) each opposite two Y heads (64y₂, 64y₁) (Y linear encoders 70A and 70C), the position of the wafer table WTB in the XY plane is managed. In the state of FIG. 18A , a straight line (center line) parallel to the Y axis passing through the center of the wafer table WTB (almost coincident with the center of the wafer W) is drawn on the straight line LV described above. has been matched.

Then, in this state, the main controller 20 starts scanning (scan) of the wafer stage WST in the +Y direction, and after this scanning starts, the wafer stage WST moves in the +Y direction, The Z sensors 72a to 72d and the multipoint AF systems 90a and 90b are operated together (turned on) until the detection beams of the multipoint AF systems 90a and 90b start to strike the wafer W. .

Then, as shown in Fig. 18(B), in a state in which the Z sensors 72a to 72d and the multi-point AF systems 90a and 90b are operating simultaneously, the wafer stage WST advances in the +Y direction. During the period, at predetermined sampling intervals, the position information (plane position information) regarding the Z-axis direction of the wafer table WTB surface (the surface of the plate 28) measured by the Z sensors 72a to 72d, and the multi-point AF system Position information (plane position information) regarding the Z-axis direction of the wafer W surface at the plurality of detection points detected at (90a, 90b) is input, and the inputted plane position information and Y at each sampling The three characters of the measured values of the linear encoders 70A and 70C are sequentially stored in a memory (not shown) in correspondence with each other.

Then, when the detection beams of the multi-point AF systems 90a and 90b do not reach the wafer W, the main controller 20 ends the above sampling, and returns to each detection point of the multi-point AF systems 90a and 90b The surface position information for the spherical surface is converted into data based on the surface position information by the Z sensors 72a to 72d input at the same time.

To describe this in more detail, based on the average value of the measured values of the Z sensors 72a and 72b, the region near the -X side end of the plate 28 (Y scale 39Y₂. Corresponding to a point: Hereinafter, this point is called a left measurement point) and surface position information is calculated|required. Further, based on the average value of the measured values of the Z sensors 72c and 72d, the area near the +X side end of the plate 28 (Y scale 39Y₁. Corresponding to a point: Hereinafter, this point is called a right measurement point), and surface position information is calculated|required. Then, as shown in Fig. 18(C), the main controller 20 converts the surface position information at each detection point of the multi-point AF system 90a, 90b to the surface position of the left measurement point P1 and the surface position of the right measurement point ( It is converted into surface position data (z1 to zk) based on a straight line connecting the surface positions of P2). Such conversion is performed by the main controller 20 on the information input at the time of all sampling.

In this way, by acquiring the conversion data in advance, for example, during exposure, the Z sensor 74_1,j, 74_2,j and 76_1,q, 76_2,q) as a wafer table (WTB) surface (Y scale (39Y)₂) is the point on the area formed, and the Y scale (39Y₁) is measured, and the inclination (mainly θy rotation) with respect to the Z position and the XY plane of the wafer table WTB is calculated. By using the calculated Z position of the wafer table WTB, the inclination with respect to the XY plane, and the above-mentioned plane position data z1 to zk, the plane position information of the wafer surface is not actually acquired, and the upper surface of the wafer W is Surface position control becomes possible. Accordingly, since there is no problem even if the multi-point AF system is disposed at a position away from the projection optical system PL, the focus mapping of the present embodiment can be preferably applied even to an exposure apparatus or the like having a narrow working distance.

In addition, in the above description, the surface position of the left measurement point P1 and the surface position of the right measurement point P2 are based on the average value of the measured values of the Z sensors 72a and 72b and the average expression of the Z sensors 72c and 72d, respectively. However, the calculation is not limited to this, and the surface position information at each detection point of the multi-point AF system 90a, 90b is connected to, for example, the surface position measured by the Z sensors 72a, 72c. It may be converted into surface position data based on a straight line. In this case, the difference between the measured value of the Z sensor 72a and the measured value of the Z sensor 72b and the difference between the measured value of the Z sensor 72c and the measured value of the Z sensor 72d obtained at each sampling timing are respectively obtained. Then, when performing surface position control during exposure, etc., the Z sensor (74_1,j, 74_2,j and 76_1,q, 76_2,q) by measuring the surface of the wafer table WTB to calculate the Z position of the wafer table WTB and the inclination to the XY plane (not only the θy rotation but also the θx rotation), the calculated Z position of the wafer table WTB and By using the inclination with respect to the XY plane, the above-mentioned plane position data z1 to zk, and the difference, plane position control of the wafer W is attained without actually acquiring plane position information on the wafer surface.

The above description is premised on the fact that there are no irregularities on the surface of the wafer table WTB. However, in reality, as shown in Fig. 18(C), the surface of the wafer table WTB, that is, the Y scale 39Y₂) formed first partial region 28b₁) of the surface and Y scale (39Y₁) formed in the second partial region 28b₂) has irregularities on the surface, etc. However, even when unevenness exists on the surface of the wafer table WTB in this way, very high-precision surface position control is possible at a point on the meridian (a straight line parallel to the Y-axis passing through the wafer center) of the wafer W. .

Hereinafter, this is demonstrated.

When performing focus mapping, the Z sensors 72a to 72d serving as a reference at the time of mapping detect surface position information of a certain position (XY coordinate position) on the surface of the wafer table WTB. Then, as is clear from the above description, focus mapping is performed while fixing the X position of the wafer stage WST and moving the wafer stage WST in a straight line in the +Y direction. That is, the line (on the surface of the second water repellent plate 28b) on which the Z sensors 72a to 72d detect the surface position information when performing focus mapping also becomes a straight line parallel to the Y axis.

During the focus mapping (when the wafer stage WST is moving in the +Y direction), the shot region located on the meridian of the wafer is exposed without moving the wafer stage WST in the X-axis direction. position (below the projection optics PL). When the shot region on the meridian reaches the exposure position, it is on the same straight line parallel to the Y axis as the Z sensors 72a and 72b, and a pair of Z sensors 74_1,4, 74_2,4), a pair of Z sensors (76) on a straight line parallel to the same Y axis as the Z sensors (72c, 72d)_1,3, 76_2,3) detects the plane position information at the same point on the wafer table WTB where the Z sensors 72a, 72b and the Z sensors 72c, 72d have respectively detected the plane position information at the time of focus mapping. . That is, the reference plane measured by the Z sensor, which is a reference for detection of surface position information by the multi-point AF systems 90a, 90b, becomes the same at the time of focus mapping and the time of exposure. For this reason, even if irregularities or waves occur on the surface of the wafer table WTB, when exposing a shot region on the meridian, the irregularities and waves, etc. are not taken into account, and the Z position obtained at the time of focus mapping is taken as the Z position as it is. By using it, focus control of the wafer at the time of exposure can be performed, so that high-precision focus control is attained.

When exposing a shot region other than the meridian, if the surface of the wafer table (WTB) does not have irregularities, ripples, etc., the focus control precision equivalent to that of the shot region on the meridian can be secured, but the wafer table (WTB) ), the focus control precision depends on the precision of traverse Z travel correction, which will be described later, when there are irregularities or waves on the surface. In addition, the main controller 20 moves the wafer stage WST in the X-axis direction to expose a shot region other than the meridian, for example, with the movement of the wafer stage WST, Measurement values are transferred between a plurality of Z sensors.

Next, focus calibration will be described. The focus calibration is representative of surface position information at one end and the other end of the wafer table WTB in the X-axis direction in a certain reference state, and the surface of the measurement plate 30 of the multi-point AF systems 90a and 90b. A process (process in the first half of focus calibration) for finding a relationship between a detection result (surface position information) at a detection point, and a projection detected using the spatial image measuring device 45 in the same state as the above reference state A process (process of the latter half of focus calibration) for obtaining surface position information at the ends of one side and the other side in the X-axis direction of the wafer table WTB corresponding to the best focus position of the optical system PL is performed, and these processes Based on the result, it means a process such as finding an offset at a representative detection point of the multi-point AF system 90a, 90b, that is, a deviation between the best focus position of the projection optical system PL and the detection origin of the multi-point AF system. .

At the time of this focus calibration, the main controller 20, as shown in FIG. 19(A) , the X scale 39X₁, 39X₂) with two X heads 66 (X linear encoders 70B, 70D) opposite each, and a Y scale 39Y₁, 39Y₂) each opposite two Y heads (64y₂, 64y₁) (Y linear encoders 70A, 70C), the position of the wafer table WTB in the XY plane is managed. In the state of FIG. 19A , the center line of the wafer table WTB coincides with the straight line LV described above. Further, in the state of Fig. 19A, the wafer table WTB is at a position where the detection beams from the multi-point AF systems 90a and 90b are irradiated to the above-described measurement plate 30 in the Y-axis direction. . Further, although not shown here, there is a measurement stage MST on the +Y side of the wafer table WTB (wafer stage WST), and the above-described CD bar 46 and wafer table WTB and projection optical system Water is held between the front-end lenses 191 of PL (see Fig. 31).

(a) In this state, the main controller 20 executes the first half of the focus calibration as follows. That is, the main controller 20 has a wafer table detected by the above-described Z sensors 72a, 72b, 72c, 72d in the vicinity of each of the detection points located at both ends of the detection areas of the multi-point AF systems 90a, 90b. While detecting the surface position information at the ends of one side and the other side in the X-axis direction of (WTB), the above-described measurement plate 30 using the multi-point AF system 90a, 90b based on the surface position information. (See Fig. 3) Detects surface position information. Accordingly, the measured values of the Z sensors 72a, 72b, 72c, 72d in the state where the center line of the wafer table WTB coincides with the straight line LV described above (one side of the wafer table WTB in the X-axis direction and surface position information at the other end) and detection at a detection point on the surface of the measurement plate 30 of the multi-point AF systems 90a, 90b (a detection point located in the center or in the vicinity of the plurality of detection points) The relationship of the result (surface position information) is calculated|required.

(b) Next, the main controller 20 moves the wafer stage WST a predetermined distance in the +Y direction, and the wafer stage WST at a position where the measurement plate 30 is disposed immediately below the projection optical system PL. ) is stopped. Then, the main controller 20 performs the following processing of the second half of the focus calibration. That is, as shown in FIG. 19(B), the main controller 20 includes a pair of Z sensors each for measuring surface position information at one end and the other end of the wafer table WTB in the X-axis direction. 74_1,4, 74_2,4, 76_1,3, 76_2,3) while controlling the position (Z position) of the projection optical system PL of the measurement plate 30 (wafer table WTB) with respect to the optical axis direction (Z position) on the basis of the plane position information measured by ) to measure the spatial image of the measurement mark formed on the reticle R or the mark plate not shown on the reticle stage RST in a slit scan method, and based on the measurement result, the best of the projection optical system PL Measure the focus position. In this case, as shown in Fig. 19(B), since the liquid immersion region 14 is formed between the projection optical system PL and the measurement plate 30 (wafer table WTB), the measurement of the spatial image is This is done through the projection optics (PL) and water. In addition, although illustration is abbreviate|omitted in FIG.19(B), the measurement plate 30 etc. of the spatial image measurement apparatus 45 are mounted on the wafer stage WST (wafer table WTB), and a light receiving element etc. are measured Since it is mounted on the stage MST, the above measurement of the spatial image is performed while the wafer stage WST and the measurement stage MST are kept in contact (or close to each other) (refer to Fig. 33). By the above measurement, the Z sensor 74 in a state where the center line of the wafer table WTB coincides with the straight line LV described above._1,4, 74_2,4, 76_1,3, 76_2,3) (that is, surface position information at the ends of one side and the other side of the wafer table WTB in the X-axis direction) of ) is obtained. This measured value corresponds to the best focus position of the projection optical system PL.

(c) Thereby, the main controller 20 controls the measured values of the Z sensors 72a, 72b, 72c, 72d (one side of the wafer table WTB in the X-axis direction) obtained in the overall focus calibration process of (a) above. The relationship between the surface position information at the other end) and the detection result (surface position information) of the surface of the measurement plate 30 by the multi-point AF systems 90a and 90b, and in the process of the latter half of the focus calibration in (b) above Z sensor (74) corresponding to the best focus position of the obtained projection optical system (PL)_1,4, 74_2,4, 76_1,3, 76_2,3) (i.e., the surface position information at the ends of one side and the other side in the X-axis direction of the wafer table WTB), offsets at the representative detection points of the multi-point AF systems 90a and 90b, i.e. , it becomes possible to obtain the deviation between the best focus position of the projection optical system PL and the detection origin of the multi-point AF system. In this embodiment, although this representative detection point is a detection point in the center or its vicinity of a some detection point, for example, the number and/or a position, etc. may be arbitrary. In this case, the main controller 20 adjusts the detection origin of the multi-point AF system so that the offset at the representative detection point becomes zero. This adjustment may be performed optically, for example by angle adjustment of the parallel flat plate (not shown) inside the light receiving system 90b, or you may adjust a detection offset electrically. Alternatively, the offset may be stored without adjusting the detection origin. Here, it is assumed that the detection origin is adjusted by the optical method described above. Thereby, the focus calibration of the multi-point AF systems 90a and 90b is finished. In addition, in the adjustment of the optical detection origin, since it is difficult to zero the offset at all detection points other than the representative detection point, it is preferable to store the offset after optical adjustment at the remaining detection points.

Next, offset correction of detection values between a plurality of light receiving elements (sensors) respectively corresponding to a plurality of detection points of the multi-point AF systems 90a and 90b (hereinafter referred to as AF-sensor offset correction) will be described.

In this AF sensor-to-sensor offset correction, as shown in FIG. An output signal from the light receiving system 90b of the multi-point AF systems 90a and 90b that has received the detection beam from the irradiation system 90a of the CD bar 46 surface (reference plane) and has received the reflected light is input.

In this case, if the surface of the CD bar 46 is set to be parallel to the XY plane, the main controller 20 will individually detect the plurality of detection points based on the output signal input as described above. A relationship between detection values (measured values) of a plurality of corresponding sensors is obtained, and the relationship is stored in a memory, or the detection values of all sensors correspond to, for example, typical detection points during focus calibration described above. Offset correction between AF sensors can be performed by electrically adjusting the detection offset of each sensor so that it becomes equal to .

However, in the present embodiment, upon input of an output signal from the light receiving system 90b of the multi-point AF systems 90a and 90b, the main controller 20, as shown in Fig. 20(A) , the Z sensor ( Since the inclination of the CD bar 46 surface is detected using 72a, 72b, 72c, 72d), it is not necessarily necessary to set the CD bar 46 surface parallel to the XY plane. That is, as schematically shown in Fig. 20(B) , the detected values at each detection point are values as indicated by arrows in the same figure, and the line connecting the upper ends of the detected values is indicated by a dotted line in the same figure. If there is an unevenness|corrugation as shown, what is necessary is just to adjust each detected value so that the line which connects the upper end of the detected value is shown by the solid line in the same figure.

Next, the traverse Z travel correction for obtaining information for correcting the influence of the unevenness on the surface of the wafer table WTB, more precisely, the surface of the second water repellent plate 28b in the X-axis direction, will be described. Here, the traverse Z travel correction is performed while moving the wafer table WTB in the X-axis direction while detecting the surface position information of the left and right regions of the surface of the second water repellent plate 28b of the wafer table WTB at a predetermined sampling interval. This is performed by simultaneously inputting the measured value of the sensor and the detected value of the surface position information of the wafer by the multi-point AF system.

In this traverse Z travel correction, the main controller 20 controls the X scale 39X as shown in Fig. 21A, similarly to the focus mapping described above.₁, 39X₂) with two X heads 66 (X linear encoders 70B, 70D) opposite each, and a Y scale 39Y₁, 39Y₂) each opposite two Y heads (64y₂, 64y₁) (Y linear encoders 70A, 70C), the position of the wafer table WTB in the XY plane is managed. In this state of Fig. 21A, the center line of the wafer table WTB is on the +X side of the straight line LV described above, and the main controller 20 is the second water repellent plate 28b of the wafer table WTB. ) The surface position information of the points near the -X side end of the left and right areas of the surface is measured using the Z sensors 72a, 72b and Z sensors 72c, 72d, and the multi-point AF system 90a, 90b It is used to detect the surface position information of the wafer.

Then, the main controller 20 moves the wafer stage WST in the -X direction at a predetermined speed, as indicated by a white arrow in Fig. 21A. During this movement, the main controller 20 performs predetermined sampling of simultaneous input of the measured values of the Z sensors 72a and 72b and the Z sensors 72c and 72d and the detection values of the multipoint AF systems 90a and 90b. Repeat at intervals. Then, as shown in Fig. 21(B) , the Z sensors 72a and 72b and the Z sensors 72c are located near the +X side end portions of the left and right regions of the surface of the second water repellent plate 28b of the wafer table WTB. , 72d) ends the operation when the above simultaneous input in the opposite state is completed.

Then, the main controller 20 obtains a relationship between the surface position information for each detection point of the multi-point AF systems 90a and 90b and the surface position information by the Z sensors 72a to 72d input at the same time. Then, the unevenness of the surface of the second water-repellent plate 28b in the X-axis direction is calculated from a plurality of relationships obtained for different sampling times. That is, in this case, since the offset between the sensors of the multi-point AF systems 90a and 90b is adjusted, if the second water repellent plate 28b is the same point on the surface, the detection values of the sensors corresponding to any detection points will be the same. . Therefore, the difference in the detection values when the same point on the surface of the second water repellent plate 28b is detected by the sensors corresponding to the different detection points is the unevenness of the surface of the second water repellent plate 28b and the Z-axis direction of the wafer table at the time of its movement. It reflects the change in position of Then, by using this relationship, the unevenness|corrugation regarding the X-axis direction of the surface of the 2nd water repellent plate 28b is computed from the several relationship calculated|required with respect to the time of different sampling.

In this way, the main controller 20 moves the wafer table WTB (wafer stage WST) in the X-axis direction while sequentially detecting the wafer using the multi-point AF systems 90a and 90b, based on the results, Information regarding the positional change in the Z-axis direction of the surface of the wafer table WTB that occurs when the table WTB (wafer stage WST) moves in the X-axis direction (at different X positions) is obtained. The main controller 20 performs focus control of the wafer W while adding this information as a correction amount during exposure.

Next, the parallel processing operation|movement using the wafer stage WST and the measurement stage MST in the exposure apparatus 100 of this embodiment is demonstrated based on FIGS. 22-36. In addition, during the following operations, opening and closing control of each valve of the liquid supply device 5 and the liquid recovery device 6 of the local liquid immersion device 8 is performed by the main controller 20 as described above, and the projection optical system The exit surface side of the tip lens 191 of PL is always filled with water. However, in the following, descriptions regarding the control of the liquid supply device 5 and the liquid recovery device 6 will be omitted in order to make the description easy to understand. In addition, although the following operation|movement description is implemented using a number of drawings, the same member is attached|subjected to each drawing, and a reference|symbol is not attached|subjected. That is, although the reference numerals described in each drawing are different, the drawings have the same configuration regardless of the presence or absence of the reference numerals. It is the same also about each drawing used for description so far.

In FIG. 22 , the step-and-scan exposure is performed on the wafer W on the wafer stage WST (here, as an example, a wafer in the middle of a certain lot (one lot is 25 sheets or 50 sheets)) is appearing At this time, the measurement stage MST is moving while keeping a predetermined distance from the wafer stage WST and following it. For this reason, the moving distance of the measurement stage MST at the time of transitioning to the above-described contact state (or proximity state) with the wafer stage WST after the end of the exposure is sufficient to be the same distance as the above-mentioned predetermined distance.

During this exposure, by the main controller 20, the X scale (39X₁, 39X₂) and two X heads 66 (X encoders 70B and 70D), which are indicated by circles in FIG.₁, 39Y₂) of the wafer table WTB (wafer stage WST) based on the measured values of the two Y heads 64 (Y encoders 70A and 70C) indicated by circles in FIG. 22 opposite to each other. The in-plane position (including θz rotation) is controlled. Further, by the main controller 20, the position in the Z-axis direction and the θy rotation (rolling) and the θx rotation (pitching) of the wafer table WTB are at the ends of one side and the other side in the X-axis direction of the surface of the wafer table WTB. 1 pair of Z-sensors each opposing each (74_1,j, 74_2,j, 76_1,q, 76_2,q) is controlled based on the measured value of . Further, the position in the Z axis direction of the wafer table WTB and the θy rotation (rolling) are measured by the Z sensor 74_1,j, 74_2,j, 76_1,q, 76_2,q) may be controlled based on the measured value of , and the θX rotation (pitching) may be controlled based on the measured value of the Y-axis interferometer 16 . In either case, the control of the position in the Z-axis direction, the ?y rotation, and the ?x rotation of the wafer table WTB during this exposure (focus leveling control of the wafer W) is performed based on the result of the above-described focus mapping performed in advance. all.

In addition, during this exposure, in order to prevent the wafer stage WST and the measurement stage MST from approaching more than a predetermined distance, the shutters 49A, 49B are set in the state which closed the openings 51A, 51B.

The above exposure operation is the result of the above-described wafer alignment (EGA) performed in advance by the main controller 20 and the alignment systems AL1 and AL2.₁ ~ AL2₄), an inter-shot movement operation in which the wafer stage WST is moved to the scanning start position (acceleration start position) for exposure of each shot region on the wafer W, and the reticle R It is performed by repeating the scanning exposure operation which transfers the formed pattern to each shot area by the scanning exposure method. In addition, the above exposure operation is performed in a state in which water is held between the front end lens 191 and the wafer W. As shown in FIG. In addition, in FIG. 22, the shot area|region located at the -Y side is performed in order of the shot area|region located at the +Y side.

In addition, the main controller 20 may accumulate the measured values of the encoders 70A-70D and the measured values of the interferometers 16 and 126 during exposure, and may update the above-mentioned correction map as needed.

Then, as shown in FIG. 23 , before the exposure to the wafer W is finished, for example, when different shot regions on the wafer W are sequentially exposed, before the final shot regions are exposed, the main controller (20) starts the downward driving of the shutters 49A, 49B via the drive mechanisms 34A, 34B, and sets the openings 51A and 51B to the open state. After confirming through the opening/closing sensor 101 that the shutters 49A and 49B are in the front open state, the main controller 20 maintains the measured value of the X-axis interferometer 130 at a constant value while maintaining the Y-axis interferometer 18. The stage drive system 124 is controlled based on the measured value of , and the measurement stage MST (measurement table MTB) is moved to the position shown in FIG. 24 . At this time, the end face on the -Y side of the CD bar 46 (measurement table MTB) and the end face on the +Y side of the wafer table WTB are in contact. In addition, for example, by monitoring the measured value of an interferometer or an encoder that measures the position of each table in the Y-axis direction, the measurement table (MTB) and the wafer table (WTB) are separated by about 300 µm in the Y-axis direction, in a non-contact state (proximity). state) may be maintained.

Then, as shown in FIG. 25 , the main controller 20 moves the measurement stage MST in the -Y direction while maintaining the positional relationship between the wafer table WTB and the measurement table MTB in the Y-axis direction. Along with starting the driving operation, the operation of driving the wafer stage WST toward the unloading position UP is started. When this operation is started, in the present embodiment, the measurement stage MST is moved only in the -Y direction, and the wafer stage WST is moved in the -Y direction and the -X direction.

In this way, when the wafer stage WST and the measurement stage MST are simultaneously driven by the main controller 20, the water held between the tip lens 191 of the projection unit PU and the wafer W (Water in the immersion region 14) As the wafer stage WST and the measurement stage MST move to the -Y side, the wafer W the plate 28 the CD bar 46 the measurement table ( MTB) in the order of Further, during the above movement, the wafer table WTB and the measurement table MTB maintain the above-described contact state (or proximity state). 25 shows a state immediately before the water in the liquid immersion region 14 is passed from the plate 28 to the CD bar 46 .

From the state of Fig. 25, further, when the wafer stage WST and the measurement stage MST are slightly driven simultaneously in the -Y direction, the wafer stage WST (wafer table WTB) by the Y encoders 70A and 70C) Since it becomes impossible to measure the position of , immediately before this, the main controller 20 controls the Y position and θz rotation of the wafer stage WST (wafer table WTB) with the measured values of the Y encoders 70A and 70C. Switches from the control based on the Y-axis interferometer 16 to the control based on the measured values of the Y-axis interferometer 16 . Then, after a predetermined time, as shown in Fig. 26, since the measurement stage MST arrives at a position where the above-described Sec-BCHK (interval) is performed, the main controller 20 controls the measurement stage MST at that position. With stopping the X scale (39X₁The X position of the wafer stage WST is measured by the X head 66 (X linear encoder 70B) indicated by a circle in FIG. 26 opposite to 16), the wafer stage WST is again driven toward the unloading position UP, and stopped at the unloading position UP. In addition, in the state of FIG. 26, water is hold|maintained between the measurement table MTB and the front-end|tip lens 191.

Then, the main controller 20 uses the CD bar 46 of the measurement stage MST, as shown in Figs. 26 and 27, for the 4 for the primary alignment system AL1 in the above-described procedure. Sec-BCHK (interval) for measuring the relative positions of two secondary alignment systems is performed. In parallel with this Sec-BCHK (interval), the main controller 20 gives a command to a drive system of an unloading arm (not shown) to unload the wafer W on the wafer stage WST stopped at the unloading position UP. At the same time, the wafer stage WST is driven in the +X direction and the loading position ( LP). Here, in the unloading of the wafer, the vertical movement pin CT supports and lifts the wafer W from below, the unloading arm enters below the wafer W, and the vertical movement pin CT goes down slightly or Alternatively, the wafer is transferred from the vertical movement pin CT to the unloading arm by raising the unloading arm slightly or the like.

Next, the main controller 20 causes the measurement stage MST to transition from the state away from the wafer stage WST to the above-described contact state (or proximity state) with the wafer stage WST, as shown in FIG. 28 . is moved to the optimum standby position (hereinafter referred to as "optimal scram standby position") for In parallel with this, the main controller 20 gives a command to a drive system of a load arm (not shown) to load a new wafer W on the wafer table WTB. The rod of the wafer W is passed to the vertical movement pin CT holding the wafer W held by the rod arm raised by a predetermined amount from the rod arm, and after the rod arm is retracted, the vertical movement pin By descending (CT), the wafer W is mounted on the wafer holder and sucked by a vacuum chuck (not shown) in this order. In this case, since the vertical movement pin CT maintains a raised state by a predetermined amount, the wafer load can be performed in a shorter time compared to the case where the vertical movement pin CT is driven down and accommodated in the wafer holder. 28 shows a state in which the wafer W is loaded onto the wafer table WTB.

In this embodiment, the optimal scram standby position of the above-mentioned measurement stage MST is suitably set according to the Y coordinate of the alignment mark laid in the alignment shot area|region on a wafer. As a result, in the transition to the contact state (or proximity state), the operation of moving the measurement stage MST to its optimal scram standby position becomes unnecessary, compared to the case of waiting at a position away from the optimal scram standby position. , the number of movements of the measurement stage MST can be reduced by one. Further, in the present embodiment, as the optimum scram standby position, the optimum scram position is the position at which the wafer stage WST stops for the above-described wafer alignment, so as to be able to transition to the contact state (or proximity state). The RAM standby position is determined.

Next, as shown in FIG. 29 , the main controller 20 moves the wafer stage WST from the loading position LP to the reference mark FM on the measurement plate 30 of the primary alignment system AL1. It is moved to a position positioned within the field of view (detection area) (that is, a position where the processing of the first half of the Pri-BCHK described above is performed). In the middle of this movement, the main controller 20 controls the position in the XY plane of the wafer table WTB, the measured value of the encoder 70B for the X-axis direction, and the Y-axis interferometer 16 for the Y-axis direction and θz rotation. ) from the control based on the measured value of the X scale (39X₁, 39X₂) and two X heads 66 (encoders 70B, 70D) indicated by a circle in FIG. 29 opposite to , and a Y scale 39Y₁, 39Y₂) opposite to the two Y heads (64y) indicated by a circle in FIG.₂, 64y₁) (encoders 70A, 70C) switches to control based on the measured value.

And the main controller 20 performs the process of the first half of the above-mentioned Pri-BCHK which detects the reference mark FM using primary alignment system AL1. At this time, the measurement stage MST is on standby at the above-described optimal scram standby position.

Next, the main controller 20 manages the positions of the wafer stage WST based on the measured values of the four encoders described above while controlling the three first alignment shot areas AS (FIG. 12C). )), the movement in the +Y direction of the wafer stage WST toward the position at which the alignment mark is detected is started. After the start of movement of this wafer stage WST in the +Y direction, the main controller 20 opens the shutters 49A and 49B in the above-described order, and further approaches the wafer stage WST and the measurement stage MST. to allow Further, the main controller 20 confirms the opening of the shutters 49A and 49B based on the detection result of the opening/closing sensor 101 .

Then, when the wafer stage WST reaches the position shown in FIG. 30 , the main controller 20 causes the wafer stage WST and the measurement stage MST to Contact (or close to a distance of about 300 mu m) is detected, and the wafer stage WST is immediately stopped. Prior to this, the main controller 20 activates (turns on) all or part of the Z sensors 72a to 72d at or before the point in time when all or part of the Z sensors 72a to 72d face the wafer table WTB. (ON)), and the measurement of the Z position and the inclination (θy rotation and θx rotation) of the wafer table WTB is started.

After the stop of the wafer stage WST, the main controller 20 includes a primary alignment system AL1 and a secondary alignment system AL2.₂, AL2₃), almost simultaneously and individually detects the alignment marks laid on the three first alignment shot areas AS (refer to the star mark in Fig. 30), and the three alignment systems AL1, AL2₂, AL2₃) and the measurement values of the four encoders at the time of detection are correlated and stored in a memory (not shown). In this case, simultaneous detection of the alignment marks laid on the three first alignment shot regions AS is performed by changing the Z position of the wafer table WTB, as described above, to thereby perform a plurality of alignment systems AL1 and AL2.₁ ~ AL2₄) and the wafer W mounted on the wafer table WTB, while changing the relative positional relationship in the Z-axis direction (focus direction).

As described above, in the present embodiment, the transition to the contact state (or proximity state) between the measurement stage MST and the wafer stage WST at the position where the detection of the alignment mark of the first alignment shot region AS is performed This is completed, and from that position, by the main controller 20, both stages WST and MST in the contact state (or proximity state) are moved in the +Y direction (the five second alignment shot regions described above). Step movement toward the position for detecting the alignment mark laid on (AS) is started. Prior to the start of movement in the +Y direction of both stages WST and MST, the main controller 20, as shown in FIG. 30, controls the wafer table WTB of the detection beams of the multi-point AF systems 90a and 90b. initiate an investigation into Thereby, the detection area of the multi-point AF system is formed on the wafer table WTB.

Then, when both stages WST and MST arrive at the position shown in FIG. 31 during the movement of both stages WST and MST in the +Y direction, the main controller 20 controls the first half of the focus calibration described above. The processing is performed and the measured values of the Z sensors 72a, 72b, 72c, 72d (the X-axis direction of the wafer table WTB) in a state where the center line of the wafer table WTB coincides with the straight line LV described above. The relationship between the surface position information in the end portions of one side and the other side) and the detection result (surface position information) of the surface of the measurement plate 30 by the multi-point AF systems 90a and 90b is obtained. At this time, the liquid immersion region 14 is formed in the vicinity of the boundary between the CD bar 46 and the wafer table WTB. That is, it is in a state immediately before the water in the liquid immersion region 14 is passed from the CD bar 46 to the wafer table WTB.

Then, when both stages WST and MST move again in the +Y direction while maintaining the contact state (or proximity state) and reach the position shown in FIG. 32, the five alignment systems AL1, AL2₁ ~ AL2₄), the alignment marks laid on the five second alignment shot areas AS are detected almost simultaneously and individually (refer to the star mark in FIG. 32), and the five alignment systems AL1, AL2₁ ~ AL2₄) and the measurement values of the four encoders at the time of detection are correlated and stored in a memory (not shown). In addition, as mentioned above, simultaneous detection of the alignment mark provided in five 2nd alignment shot area|regions AS in this case is also performed, changing the Z position of wafer table WTB.

Also, at this time, the X scale (39X₁), and since there is no X head located on the straight line LV, the main controller 20 has the X scale 39X₂), the position of the wafer table WTB in the XY plane is controlled based on the measured values of the X head 66 (X linear encoder 70D) and the Y linear encoders 70A, 70C opposing the .

As mentioned above, in this embodiment, when the detection of the alignment mark of 2nd alignment shot area|region AS is complete|finished, the positional information (two-dimensional positional information) of a total of eight alignment marks is detectable. Therefore, in this step, the main controller 20 uses this positional information to perform statistical calculation, for example, by the EGA method described above to obtain the scaling (shot magnification) of the wafer W, and the calculated shot Based on the magnification, the optical properties of the projection optical system PL, for example, the projection magnification may be adjusted. In the present embodiment, by driving a specific movable lens constituting the projection optical system PL, or changing the pressure of a gas inside an airtight chamber formed between specific lenses constituting the projection optical system PL, the projection optical system PL is The optical characteristic of the projection optical system PL is adjusted by controlling the adjustment device 68 (refer to FIG. 8) for adjusting the optical characteristic of . That is, the main controller 20 is the alignment system AL1, AL2.₁ ~ AL2₄) controls the adjustment device 68 to adjust the optical characteristics of the projection optical system PL based on the detection results in a step in which a predetermined number (here, 8) of marks on the wafer W have been detected. it can be done as In addition, the number of marks is not limited to eight or half of the total number of marks to be detected, and may be, for example, more than the number required for calculation of wafer scaling or the like.

In addition, the main controller 20 controls the two stages WST and MST in the contact state (or proximity state) after the end of the simultaneous detection of the alignment marks laid on the five second alignment shot areas AS. At the same time as the movement in the +Y direction is started again, as shown in Fig. 32, the focus mapping described above using the Z sensors 72a to 72d and the multi-point AF systems 90a, 90b is started.

Then, when both stages WST and MST reach a position where the measurement plate 30 shown in FIG. 33 is disposed immediately below the projection optical system PL, the main controller 20 controls the second half of the Pri-BCHK described above. The processing and the processing of the latter half of the focus calibration described above are performed.

Then, the main controller 20 calculates the baseline of the primary alignment system AL1 based on the result of the processing in the first half of the Pri-BCHK and the result of the processing in the second half of the Pri-BCHK described above. At the same time, the main controller 20 controls the measured values of the Z sensors 72a, 72b, 72c, and 72d (at one end of the wafer table WTB in the X-axis direction and the other end of the other side) obtained in the overall process of the focus calibration described above. the relationship between the surface position information of ) and the detection result (plane position information) of the surface of the measurement plate 30 by the multi-point AF systems 90a and 90b, and the projection optical system PL obtained in the processing of the latter half of the focus calibration described above. Z sensor corresponding to the best focus position (74_1,4, 74_2,4, 76_1,3, 76_2,3) (that is, surface position information at the ends of one side and the other side in the X-axis direction of the wafer table WTB) of ), to obtain an offset at a representative detection point of the multi-point AF system 90a, 90b, , the detection origin of the multi-point AF system is adjusted by the optical method described above so that the offset becomes zero.

In this case, from the viewpoint of throughput, only one of the processing of the latter half of the Pri-BCHK and the processing of the latter half of the focus calibration may be performed, or neither processing may be performed, but the next processing may be performed. Of course, when the processing of the second half of Pri-BCHK is not performed, there is no need to perform the processing of the first half of Pri-BCHK, and in this case, the main controller 20 sets the above-described loading position LP What is necessary is just to move wafer stage WST to the position which detects the alignment mark laid in 1st alignment shot area|region AS from this.

In addition, in this state of FIG. 33, the above-mentioned focus mapping continues.

When the wafer stage WST reaches the position shown in FIG. 34 by movement in the +Y direction of both stages WST and MST in the above contact state (or proximity state), the main controller 20 is , while stopping the wafer stage WST at the position, the movement in the +Y direction is continued with respect to the measurement stage MST. And the main controller 20 has five alignment systems AL1, AL2.₁ ~ AL2₄), almost simultaneously and individually detects the alignment marks laid on the five third alignment shot areas AS (refer to the star mark in FIG. 34), and the five alignment systems AL1, AL2₁ ~ AL2₄) and the measurement values of the four encoders at the time of detection are correlated and stored in a memory (not shown). In addition, simultaneous detection of the alignment marks laid on the five 3rd alignment shot areas AS in this case is also performed, changing the Z position of wafer table WTB as mentioned above. Also, even at this point, focus mapping is in progress.

On the other hand, after a predetermined time from the stop of the wafer stage WST, the shock absorbers 47A and 47B are separated from the openings 51A and 51B formed in the X-axis stator 80, and the measurement stage MST and The wafer stage WST transitions from the contact (or proximity state) to the separation state. After shifting to this separation state, the main controller 20 drives the shutters 49A and 49B upwards via the drive mechanisms 34A and 34B, thereby setting the openings 51A and 51B to a closed state. , when the measurement stage MST reaches the exposure start standby position where it waits until the exposure start, it stops at that position.

Next, the main controller 20 starts the movement in the +Y direction of the wafer stage WST toward the position for detecting the alignment marks laid on the above-described three fourth alignment shot regions AS. At this time, focus mapping continues. On the other hand, measurement stage MST is waiting at the said exposure start standby position.

And when wafer stage WST reaches the position shown in FIG. 35, main controller 20 immediately stops wafer stage WST, and primary alignment system AL1, secondary alignment system AL2₂, AL2₃), almost simultaneously and individually detect the alignment marks laid on the three fourth alignment shot areas AS on the wafer W (see the star mark in Fig. 35), and the three alignment systems AL1, AL2₂, AL2₃) and the measurement values of the four encoders at the time of detection are correlated and stored in a memory (not shown). In addition, the simultaneous detection of the alignment mark provided in the three 4th alignment shot area|regions AS in this case is also performed, changing the Z position of wafer table WTB as mentioned above. Even at this point in time, focus mapping continues, and the measurement stage MST remains on standby at the exposure start standby position. Then, the main controller 20 performs statistical calculation using, for example, the EGA method described above using the detection result of the 16 alignment marks obtained in this way and the measurement values of the corresponding four encoders, Arrangement information (coordinate values) of all shot regions on the wafer W in the XY coordinate system defined by the measurement axis of the encoder is calculated.

Next, the main controller 20 continues the focus mapping while moving the wafer stage WST again in the +Y direction. Then, when the detection beams from the multi-point AF systems 90a and 90b deviate from the wafer W surface, focus mapping is finished as shown in FIG. Thereafter, the main controller 20 controls the result of the above-described wafer alignment (EGA) and the latest five alignment systems AL1, AL2.₁ ~ AL2₄) based on the measurement result of the baseline, step-and-scan exposure is performed by immersion exposure, and the reticle pattern is sequentially transferred to a plurality of shot regions on the wafer W. Thereafter, the same operation is repeated for the remaining wafers in the lot.

As described above, according to the present embodiment, the position information in the XY plane of the wafer table WTB is not affected by air fluctuations by the encoder system including the encoders 70A to 70D, etc. having good short-term stability of the measured values. In addition to measuring with high precision without_1,1 ∼ 74_2,6, and 76_1,1 ∼ 76_2,6) and the like, position information in the Z-axis direction orthogonal to the XY plane of the wafer table WTB is measured with high precision without being affected by air fluctuations or the like. In this case, since both the encoder system and the surface position measurement system directly measure the upper surface of the wafer table WTB, a simple and direct position control of the wafer table WTB and further the wafer W is possible. becomes

Further, according to the present embodiment, during the focus mapping described above, the surface position measurement system and the multi-point AF systems 90a and 90b are simultaneously operated by the main controller 20, and the multi-point AF systems 90a and 90b are operated. The detection result of is converted into data based on the measurement result of the surface position measurement system. Therefore, by acquiring this conversion data in advance, only by measuring the position information in the Z-axis direction of the wafer table WTB and the position information in the inclination direction with respect to the XY plane by the surface position measurement system after that, It becomes possible to control the surface position of the wafer W without acquiring surface position information of the wafer W. Therefore, in this embodiment, although the working distance between the front-end|tip lens 191 and the wafer W surface is narrow, the focus leveling control of the wafer W at the time of exposure can be performed with high precision without any obstacle in particular.

In the present embodiment, as is clear from the description of the parallel processing operation using the wafer stage WST and the measurement stage MST described above, the position at which the wafer W is loaded into the wafer stage WST (the loading position ( In the process of moving the wafer W from LP)) to a position where a predetermined process, for example, exposure (pattern formation), is performed with respect to the wafer W, the main controller 20 includes the plane position measurement system Simultaneous operation of the multi-point AF systems 90a and 90b and the above-described data conversion processing (focus mapping) are performed.

In addition, in this embodiment, alignment system (AL1, AL2)₁ ~ AL2₄) from the start of the detection operation of the plurality of marks to be detected (for example, the wafer alignment operation described above) to completion of the detection operation of the plurality of marks, the main controller 20 is , starts the simultaneous operation of the surface position measurement system and the multi-point AF systems 90a, 90b, and starts the data conversion process.

Further, according to the present embodiment, as described above, since the surface position of the wafer table WTB and furthermore the wafer W can be controlled with high precision, there is little exposure defect resulting from the surface position control error. is made possible, thereby making it possible to form an image of a pattern on the wafer W without accompanying a phenomenon in which the image is blurred.

Moreover, according to this embodiment, by the main controller 20, for example, prior to exposure, on the basis of the surface position information in the edge part of one side and the other side of the X-axis direction of wafer table WTB, multi-point The surface position information of the wafer W is measured using the detection values (measured values) of the AF systems 90a and 90b, and even during exposure, at one end of the wafer table WTB in the X-axis direction and the other end On the basis of the surface position information, the position adjustment of the wafer W with respect to the direction parallel to the optical axis AX of the projection optical system PL and the inclination direction with respect to the surface orthogonal to the optical axis AX is performed. Therefore, in spite of measuring the surface position information of the wafer W prior to exposure, it becomes possible to perform surface position control of the wafer W with high precision during actual exposure.

Further, according to the present embodiment, the spatial image measuring apparatus 45 is partially formed on the wafer table WTB (wafer stage WST) and the remaining part is formed on the measurement stage MST, The spatial image of the metrology mark formed by the projection optical system PL is measured. For this reason, for example, when measuring the best focus position of the projection optical system PL by the spatial image measuring device 45 at the time of the focus calibration described above, a part of the spatial image measuring device 45 is formed It becomes possible to measure the position in the direction parallel to the optical axis of the projection optical system PL of the wafer table WTB (wafer stage WST) as the reference of the best focus position. Therefore, when exposing a wafer with the illumination light IL, based on the measurement result of this best-focus position, regarding the direction parallel to the optical axis of the projection optical system PL of the wafer table WTB (wafer stage WST) The position is adjusted with high precision. Further, since only a part of the spatial image measuring apparatus 45 is formed on the wafer table WTB (wafer stage WST), the wafer table WTB (wafer stage WST) does not increase in size. The position controllability can be ensured favorably. In addition, all of the remaining part of the spatial image measuring apparatus 45 may not be formed in the measurement stage MST, but may be respectively formed in the measurement stage MST and the outside thereof.

Further, according to the present embodiment, the position information of the measurement stage MST is measured by the Y-axis interferometer 18 and the X-axis interferometer 130, and the wafer table WTB is measured by the four linear encoders 70A to 70D. ) (wafer stage WST) is measured. Here, the linear encoders 70A to 70D are disposed on the wafer table WTB and have a plurality of gratings (that is, the Y scale 39Y₁, 39Y₂) or X scale (39X₁, 39X₂)) and scale (39Y₁, 39Y₂, 39X₁, 39X₂) is a reflection type encoder including a plurality of heads (Y heads 64 or X heads 66) disposed opposite to each other. For this reason, in the linear encoders 70A to 70D, the optical path length of the beam irradiated from each head to the opposing scale (grating) is remarkably shorter than that of the Y-axis interferometer 18 and the X-axis interferometer 130, so that the air fluctuates. It is less susceptible to the influence of , and the short-term stability of measured values is excellent compared to the Y-axis interferometer 18 and the X-axis interferometer 130 . Therefore, it becomes possible to stably positionally control the wafer table WTB (wafer stage WST) holding the wafer.

Further, according to the present embodiment, the arrangement interval in the X-axis direction of the plurality of Y heads 64 having the Y-axis direction as the measurement direction is the Y scale (39Y).₁, 39Y₂) is narrower than the width in the X-axis direction, and the arrangement interval in the Y-axis direction of the plurality of X heads 66 with the X-axis direction as the measurement direction is the X-axis (39X).₁, 39X₂) is narrower than the width in the Y-axis direction. For this reason, when moving the wafer table WTB (wafer stage WST), while sequentially switching the plurality of Y heads 64, the Y scale 39Y₁ or 39Y₂), the Y position of the wafer table WTB (wafer stage WST) can be measured based on the measured value of the Y linear encoder 70A or 70C that irradiates the detection light (beam) to X scale (39X), while sequentially switching the X head (66)₁ or 39X₂), the X position of the wafer table WTB (wafer stage WST) can be measured based on the measured value of the X linear encoder 70B or 70D that irradiates the detection light (beam) to the .

Further, according to the present embodiment, when the wafer table WTB (wafer stage WST) is moved in the Y-axis direction for obtaining the correction information of the grid pitch of the scale described above, the main controller 20, X Scale (39X₁, 39X₂), correction information for correcting the curvature of each grating line 37 constituting the lattice line (correction information of the grating curvature) is obtained in the above-described procedure. Then, by the main controller 20 , the measured values obtained from the head units 62B and 62D are Y position information of the wafer table WTB (wafer stage WST) and the X scale 39X₁, 39X₂), the driving of the wafer table WTB (wafer stage WST) in the X-axis direction while correcting based on the correction information of the grating warp (and the correction information of the grating pitch) of the X scale 39X₁, 39X₂) and the head units 62B and 62D. Thus, the X scale (39X₁, 39X₂), unaffected by the bending of each grid that makes up the X scale (39X₁, 39X₂By using the head units 62B and 62D (encoders 70B, 70D) using Moreover, by implementing the same thing as the above also about the Y-axis direction, the Y-axis direction drive of wafer table WTB (wafer stage WST) can also be performed with high precision.

Further, according to the present embodiment, while the wafer stage WST moves linearly in the Y-axis direction, the wafer W is operated by the multi-point AF system 90a, 90b in which a plurality of detection points are set at predetermined intervals in the X-axis direction. ) A plurality of alignment systems (AL1, AL2) in which surface position information is detected and detection areas are arranged in a line along the X-axis direction₁ ~ AL2₄), alignment marks different from each other in positions on the wafer W are detected. That is, the wafer stage WST (wafer W) includes a plurality of detection points (detection areas AF) of the multi-point AF systems 90a and 90b, and a plurality of alignment systems AL1 and AL2.₁ ~ AL2₄) by linearly passing through the detection area of the wafer W, detection of surface position information of the almost entire surface of the wafer W and all alignment marks to be detected on the wafer W (eg, alignment short in EGA). Since the detection of the area alignment mark) is completed, the throughput can be improved compared to the case where the detection operation of the alignment mark and the detection operation of the surface position information (focus information) are performed independently (separately).

In the present embodiment, as is clear from the description of the parallel processing operation using the wafer stage WST and the measurement stage MST described above, the main controller 20 sets the exposure position (exposure area IA) from the loading position. During the movement of the wafer stage WST toward the direction (that is, during the movement of the wafer stage WST in the Y-axis direction), a plurality of marks having different positions in the X-axis direction on the wafer W (alignment marks in the alignment shot region) multiple alignment systems (AL1, AL2)₁ ~ AL2₄) and simultaneously detecting the surface position information of the wafer W that has passed through the detection areas of a plurality of alignment systems with the movement of the wafer stage WST in the Y-axis direction to the multi-point AF systems 90a and 90b. to be detected with For this reason, compared with the case where the detection operation|movement of an alignment mark and the detection operation|movement of surface position information (focus information) are performed independently, the throughput can be improved. In the present embodiment, the loading position and the exposure position are different from each other in the X-axis direction, but the positions in the X-axis direction may be substantially the same. In this case, the wafer stage WST can be moved almost in a straight line from the loading position to the detection area of the alignment system (and multi-point AF system). Moreover, it is good also considering a loading position and an unloading position as the same position.

In addition, according to this embodiment, a pair of Y scales (39Y₁, 39Y₂) each opposite 1 pair of Y heads (64y₂, 64y₁) (a pair of Y-axis linear encoders 70A, 70C) while measuring the Y-axis direction and θz rotation (yaw) of the wafer table WTB (wafer stage WST) The table WTB (wafer stage WST) can be moved in the Y-axis direction. In this case, the secondary alignment system AL2 with respect to the primary alignment system AL1 according to the arrangement (size, etc.) of the shot regions formed on the wafer W.₁ ~ AL2₄) in the state in which the relative position in the X-axis direction is adjusted, the movement of the wafer table WTB (wafer stage WST) in the Y-axis direction can be realized, so that the position in the Y-axis direction on the wafer W is the same In addition, alignment marks of a plurality of shot regions (eg, alignment shot regions) having different positions in the X-axis direction are applied to a plurality of alignment systems (AL1, AL2).₁ ~ AL2₄) can be measured simultaneously.

Further, according to this embodiment, the main controller 20 uses the wafer table WTB (wafer While controlling the position of the stage WST), the alignment marks on the wafer W₁ ~ AL2₄) is detected using i.e. Y scale (39Y₁, 39Y₂) with opposite Y heads 64 (Y linear encoders 70A, 70C) and X scales (39X respectively)₁, 39X₂), while controlling the position of the wafer table WTB (wafer stage WST) with high precision based on the measured values of the X heads 66 (X linear encoders 70B and 70D) respectively opposite to the wafer W Align the alignment marks on the top with the alignment system (AL1, AL2).₁ ~ AL2₄) can be used to detect

Further, according to the present embodiment, the alignment systems AL1 and AL2 are determined by the positions of the wafer table WTB (wafer stage WST) in the XY plane.₁ ~ AL2₄Since the number of detection points (number of measurement points) of the alignment marks on the wafer W simultaneously detected by When moving in a direction intersecting with , for example, in the Y-axis direction, alignment marks having different positions on the wafer W are aligned according to the position of the wafer table WTB (wafer stage WST) in the Y-axis direction, in other words, Depending on the arrangement (layout) of shot regions on the wafer W, simultaneous detection using a required number of alignment systems becomes possible.

Further, according to the present embodiment, by the main controller 20, the alignment mark to be detected by the alignment system remains on the wafer W (for example, the second alignment shot area AS described above). At the point in time when detection of the alignment marks attached to the ) is completed, based on the detection results of a plurality (eg, 8) alignment marks on the wafer W detected by the alignment system up to that point, the projection optical system PL In some cases, the adjustment device 68 is controlled to adjust the optical characteristics. In this case, after adjustment of the optical properties of the projection optical system PL, for example, in the case of detecting an image of a predetermined measurement mark (or pattern) by the projection optical system PL, the above adjustment is Even if the image of the measurement mark is shifted accompanying it, since the image of the measurement mark after the shift is measured, as a result, there is a case where the shift of the image of the measurement mark accompanying the adjustment of the optical characteristics of the projection optical system PL becomes a measurement error factor. none. Moreover, since the said adjustment is started based on the detection result of the alignment mark detected so far before all the alignment marks to be detected are detected, the said adjustment can be performed in parallel with the detection operation|movement of the remaining alignment marks. That is, in the present embodiment, the time required for the adjustment is when the detection of the alignment mark of the third alignment shot area AS is started and the detection of the alignment mark of the fourth alignment shot area AS is finished. It can be overlapped in time up to . Thereby, it is possible to improve the throughput compared with the prior art in which the adjustment is started after all marks are detected.

Further, according to the present embodiment, by the main controller 20, the projection position of the image of the pattern (for example, the pattern of the reticle R) by the projection optical system PL and the detection center of the alignment system AL1 From starting the operation (eg, the processing of the first half of the above-described Pri-BCHK) for measuring the positional relationship (base line of the alignment system AL1) until the operation is completed (eg, the above-mentioned Pri -Until processing of the latter half of BCHK is finished), alignment system (AL1, AL2)₁ ~ AL2₄) on the wafer W (for example, the alignment marks of the three first alignment shot regions and the five second alignment shot regions described above) are detected. That is, at least a part of the detection operation of the mark by the alignment system can be performed in parallel with the measurement operation of the positional relationship. Accordingly, when the measurement operation of the positional relationship is completed, at least a part of the detection operation by the alignment system of the plurality of alignment marks to be detected on the wafer W can be finished. Thereby, compared with the case where the detection operation|movement by the alignment system of the said some alignment mark is performed before or after the measurement operation|movement of the said positional relationship, the improvement of throughput is possible.

In addition, according to this embodiment, the alignment systems AL1 and AL2 of a plurality of alignment marks to be detected on the wafer W by the main controller 20 .₁ ~ AL2₄) (for example, the wafer alignment operation described above, that is, the detection operation of a total of 16 alignment marks laid in the first alignment shot area AS to the fourth alignment shot area AS, respectively) is started. of the projection position of the image of the pattern of the reticle R by the projection optical system PL and the positional relationship of the detection center of the alignment system AL1 (baseline of the alignment system AL1) from A measurement operation is performed. That is, in parallel with a part of the detection operation|movement of the mark by an alignment system, the measurement operation|movement of the said positional relationship can be implemented. Accordingly, alignment systems AL1, AL2 of a plurality of alignment marks to be detected on the wafer W₁ ~ AL2₄) while the detection operation is performed, the measurement operation of the positional relationship can be terminated. Thereby, compared with the case where the measurement operation|movement of the said positional relationship is performed before or after the detection operation|movement by the alignment system of a plurality of alignment marks to be detected on the wafer W, the throughput can be improved.

In addition, according to this embodiment, the main controller 20 detects a plurality of marks to be detected on the wafer W (for example, the wafer alignment operation described above, that is, the detection operation of 16 alignment marks) ) from the start until the detection operation is completed, the contact state between the wafer table WTB and the measurement table MTB (or, for example, a proximity state close to 300 μm or less), and the two tables spaced apart The switching operation of the separation state is performed. In other words, according to this embodiment, the detection operation by the alignment system of a plurality of marks to be detected on the wafer W in the contact state (or proximity state) is started, and all detection operations of the plurality of marks are completed. Before starting, both tables are controlled so that a transition from the contact state (or proximity state) to the separation state is performed. Therefore, while the detection operation of a plurality of marks to be detected on the wafer W is performed, the operation of switching the state can be ended. Thereby, the throughput can be improved as compared with the case where the state switching operation is performed before or after the detection operation of a plurality of marks to be detected on the wafer W.

Moreover, according to this embodiment, the main controller 20 starts the measurement operation|movement of the baseline of alignment system AL1 in the said separation state, and also completes it in the said contact state (or proximity state).

Further, according to the present embodiment, the main controller 20 changes the relative positional relationship between the plurality of alignment systems and the Z-axis direction (focus direction) of the wafer W to a Z-leveling mechanism not shown in the figure, while changing the wafer Stage drive system 124 (Z leveling mechanism) and alignment systems AL1, AL2 so as to simultaneously detect alignment marks different in positions from each other on W by a plurality of corresponding alignment systems.₁ ~ AL2₄) is controlled. In other words, while simultaneously changing the relative positional relationship in the focus direction of the plurality of alignment systems and the wafer W to the plurality of alignment systems, marks having different positions on the wafer W are simultaneously measured by the corresponding plurality of alignment systems. . Thereby, for each alignment system, for example, mark detection can be performed in the best focus state, and by using the detection result preferentially, the unevenness of the surface of the wafer W and a plurality of alignment systems are performed. Marks having different positions on the wafer W can be detected with high precision without being affected by the best focus difference. In addition, in this embodiment, alignment system (AL1, AL2)₁ ~ AL2₄) is arranged almost along the X-axis direction, while simultaneously changing the relative positional relationship in the focus direction of the plurality of alignment systems and the wafer W to the plurality of alignment systems, the marks at different positions are matched on the wafer W The method of simultaneously measuring by a plurality of alignment systems to be used is effective even if the arrangement of the alignment system is different from the arrangement described above. The point is that in a plurality of alignment systems, marks formed at mutually different positions on the wafer W may be detected almost simultaneously.

Moreover, in the said embodiment, as shown in FIG. 3, the Z sensor 74 of plural pairs (six pairs) with which the head unit 62C is equipped._1,j, 74_2,j) and a plurality of Y heads 64 are alternately arranged with respect to the X-axis direction, and similarly, a plurality of pairs (six pairs) of Z sensors 76 included in the head unit 62C_1,q, 76_2,q) and the plurality of Y heads 64 are alternately arranged with respect to the X-axis direction has been described, but the present invention is not limited thereto. For example, the head units 62C', 62A' shown in FIG. 37 may be used instead of the above-mentioned head units 62C, 62A. In the head unit 62C', the Z sensor 74 and the Y head 64 are alternately arranged on the straight line LH, and in the head unit 62A', the Z sensor 76 and the Y head 64 ) are alternately arranged on the straight line LH. Alternatively, the head units 162C and 162A shown in FIG. 38 may be used instead of the above-described head units 62C and 62A. In the head unit 162C, a Y head 64' having a function of a Z sensor is used instead of the Y head 64. Similarly, in the head unit 162A, instead of the Y head 64, a Z sensor is used. A Y-head 64' equipped with a function is also used. In this case, the same measurement area on the wafer table WTB becomes a common measurement point with respect to the Y-axis direction and the Z-axis direction. In this case, it is preferable that a specific one of the Y heads 64' of the head unit 162C and the above-described Z sensors 72a and 72b are arranged on a straight line in the same Y axis direction, and of the head unit 162A It is preferable that the specific one of the Y heads 64' and the Z sensors 72c and 72d described above are arranged on a straight line in the same Y-axis direction. Further, in all of X, Y, and Z, the sensor (disposition of the head and/or surrounding of the measurement optical system) may be studied so that the same measurement area on the wafer table WTB becomes a common measurement point. In addition, each pair of Z sensors (74_1,j, 74_2,j) on the +Y side and the -Y side of the Y head 64, likewise, each pair of Z sensors 76 described above._1,j, 76_2,j) may be arranged on the +Y side and the -Y side of the Y head. In this case, the Z sensor (74_1,j, 74_2,j) and the Y head 64 fitted therein, and the Z sensors 72a and 72b are preferably arranged on a straight line in the same Y-axis direction, and the Z sensor 76_1,j, 76_2,j), the Y head 64 fitted therein, and the Z sensors 72a and 72b are preferably arranged on a straight line in the same Y-axis direction. Also, in this case, the Z sensor (74_1,j, 74_2,j) and Z sensor (76_1,j, 76_2,j) may or may not be symmetrical with respect to the Y head 64 .

In addition, in the above embodiment, a pair of Y scales (39Y₁, 39Y₂) and a pair of X scales (39X₁, 39X₂) is formed on the wafer table WTB, and correspondingly to this, a pair of head units 62A, 62C are disposed on one side and the other side in the X-axis direction with the projection optical system PL interposed therebetween, and two The case where the head units 62B and 62D are disposed on one side and the other side in the Y-axis direction with the projection optical system PL therebetween has been exemplified. However, it is not limited to this, and the Y scale for measurement of the Y-axis direction position (39Y₁, 39Y₂) and X scale for measurement of position in the X-axis direction (39X₁, 39X₂), at least one may be formed on the wafer table WTB instead of one pair, or at least one of the pair of head units 62A, 62C and the two head units 62B, 62D is one Only dogs may be formed. Note that the extension direction of the scale and the extension direction of the head unit are not limited to the orthogonal directions such as the X-axis direction and the Y-axis direction in the above embodiment, and any direction that intersects each other may be sufficient.

In addition, in the above description, the case of performing Sec-BCHK (interval) using the CD bar 46 of the measurement stage MST while wafer exchange is being performed at the wafer stage WST has been described. , but not limited thereto, by using the measurement member of the measurement stage MST to perform at least one of illuminance non-uniformity measurement (and illuminance measurement), spatial image measurement, wavefront aberration measurement, etc., and the measurement result is then It is good also as making it reflect in the exposure of the wafer performed. Specifically, for example, the projection optical system PL may be adjusted by the adjustment device 68 based on the measurement result.

In addition, in the above embodiment, at the time of calibration for acquiring the correction information of the grid pitch of the scale, the wafer table WTB is moved at a low speed (extremely low speed) so that short-term fluctuations in the measured values of the interferometer are negligible. Although described, it is not limited to this, It is also possible to move at a speed other than an extremely low speed. In this case, for example the Y scale (39Y₁, 39Y₂), the wafer table is set at different positions with respect to the X-axis direction, and the wafer table is moved in the Y-axis direction at each position in the same manner as in the above embodiment, during the movement. The measured values of the encoders 70A, 70C and the measured values of the Y interferometer 16 are simultaneously inputted, and a simultaneous equation is established using the sampling values obtained by two simultaneous input operations, and this simultaneous equation is It is good also as the correction information (for example, correction map) of the lattice pitch of a Y-scale by each independently calculating|requiring each independently.

Further, in the above embodiment, as shown in Fig. 10(A), a diffractive interference method provided with two reflecting mirrors for branching the light from the light source with an optical element such as a beam splitter and reflecting the light after the branching. Although it is assumed that the encoder is used as the encoders 70A to 70F, the present invention is not limited thereto, and a three-grid diffractive interference type encoder, or a light reflection block as disclosed in, for example, Japanese Patent Application Laid-Open No. 2005-114406 or the like. An encoder or the like provided with Further, in the above embodiment, the head units 62A to 62D have a plurality of heads arranged at predetermined intervals, but the present invention is not limited thereto. A light source emitting a beam, and a plurality of arranged without a gap, which receives the light beam in the pitch direction of the Y scale or the X scale, which receives the reflected light (diffracted light) from the Y scale or X scale (diffraction grating) of the light beam A single head having a light receiving element of

Further, in the above embodiment, the reflective diffraction grating is covered with a protective member (for example, a thin film or a glass plate, etc.) capable of transmitting the detection light from the head units 62A to 62D to prevent damage to the diffraction grating, etc. do. In the above embodiment, although a reflective diffraction grating is formed on the upper surface of the wafer stage WST substantially parallel to the XY plane, for example, a reflective diffraction grating is formed on the lower surface of the wafer stage WST. do. In this case, the head units 62A to 62D are disposed on, for example, a base plate with the lower surface of the wafer stage WST facing each other. In addition, although it is assumed that wafer stage WST is moved in a horizontal plane in the said embodiment, you may move in a plane (for example, ZX plane etc.) intersecting a horizontal plane. In addition, when the reticle stage RST moves two-dimensionally, the position information of the reticle stage RST may be measured by forming an encoder system having the same configuration as that of the above-described encoder system.

Further, in the above embodiment, the interferometer system 118 can measure the position information of the wafer stage WST in the directions (X-axis, Y-axis, θx, θy, and θz directions) of 5 degrees of freedom, but in the Z-axis direction You may make positional information also measurable. In this case, at least during the exposure operation, the position control of the wafer stage WST may be performed using the measurement value of the above-described encoder system and the measurement value of the interferometer system 118 (including at least the position information in the Z-axis direction). . This interferometer system 118 is, for example, as disclosed in Japanese Patent Application Laid-Open No. 2000-323404 (corresponding U.S. Patent No. 7,116,401), Japanese Unexamined Patent Publication No. 2001-513267 (corresponding U.S. Patent No. 6,208,407), etc. , a reflective surface inclined at a predetermined angle (for example, 45 degrees) with respect to the XY plane is formed on the side surface of the wafer stage WST, and the measuring beam is directed through the reflective surface, for example, to the above-described barrel plate or measurement frame, etc. By irradiating the formed reflective surface, positional information in the Z-axis direction of the wafer stage WST is measured. In this interferometer system 118, by using a plurality of measurement beams, positional information in the θx direction and/or the θy direction in addition to the Z axis direction can also be measured. In this case, it is not necessary to use the measuring beam for measuring the positional information in the θx direction and/or the θy direction irradiated to the moving mirror of the wafer stage WST.

Further, in the above embodiment, the plurality of Z sensors 74_{i, j}, 76_{p, q}) is provided in the head units 62C and 62A, but the present invention is not limited thereto, and the same plane position sensor as the Z sensor may be provided, for example, in a measurement frame or the like. Further, it is preferable that the encoder head and the Z sensor each have an interval with the upper surface of the wafer stage equal to or smaller than that of the tip optical element 191 of the projection optical system PL, for example, narrow. Thereby, the improvement of measurement precision can be aimed at. In this case, since it is difficult to form an AF sensor, a simple Z sensor becomes effective. In addition, although the lower surface of the nozzle unit 32 and the lower end surface of the front-end|tip optical element of the projection optical system PL were assumed to be substantially flush in the said embodiment, it is not limited to this, For example, the lower surface of the nozzle unit 32 You may arrange|position near the image plane (ie, a wafer) of the projection optical system PL rather than the exit surface of the front-end|tip optical element. That is, the local liquid immersion device 8 is not limited to the structure described above, and for example, European Patent Publication No. 1420298, International Publication No. 2004/055803, International Publication No. 2004/057590, International Publication No. 2005 /029559 pamphlet (corresponding U.S. Patent Publication No. 2006/0231206), International Publication No. 2004/086468 pamphlet (corresponding U.S. Patent Publication No. 2005/0280791), Japanese Unexamined Patent Publication No. 2004-289126 (corresponding U.S. Patent No. 6,952,253) No.), etc., can be used. Further, as disclosed in, for example, International Publication No. 2004/019128 pamphlet (corresponding to US Patent Publication No. 2005/0248856), in addition to the optical path on the image plane side of the tip optical element, the optical path on the object plane side of the tip optical element is The light path may be filled with a liquid. Further, a thin film having lyophilicity and/or dissolution preventing function may be formed on a part (including at least the liquid contact surface) or all of the surface of the tip optical element. In addition, although quartz has a high affinity for liquid and does not require a dissolution preventing film, it is preferable that fluorite forms at least a dissolution preventing film.

In addition, although it was assumed that pure water (water) is used as a liquid in the said embodiment, it goes without saying that this invention is not limited to this. As the liquid, a chemically stable, high transmittance of the illumination light IL, and a safe liquid, for example, a fluorine-based inert liquid may be used. As the fluorine-based inert liquid, for example, Florinat (trade name of 3M, USA) can be used. This fluorine-based inert liquid is excellent also in terms of a cooling effect. Moreover, as a liquid, you may use the liquid whose refractive index with respect to the illumination light IL is higher than pure water (refractive index is about 1.44), for example, 1.5 or more. Examples of the liquid include isopropanol having a refractive index of about 1.50 , a predetermined liquid having a CH bond or an OH bond such as glycerol (glycerol) having a refractive index of about 1.61, a predetermined liquid (organic solvent) such as hexane, heptane, or decane, or and decalin (Decalin: Decahydronaphthalene) having a refractive index of about 1.60. Alternatively, any two or more liquids may be mixed among these liquids, or at least one of these liquids may be added (mixed) to pure water. Alternatively, as a liquid, H in pure water⁺, Cs⁺, K⁺, Cl^-, SO₄^2-, PO₄²^- What added (mixed) bases or acids, such as these, may be sufficient. Furthermore, fine particles such as Al oxide may be added (mixed) to pure water. These liquids can transmit ArF excimer laser light. In addition, as a liquid, the light absorption coefficient is small, there is little temperature dependence, and the projection optical system (optical member at the tip) and/or the photosensitive material (or protective film (top coat film) or antireflection film, etc.) applied to the surface of the wafer. It is preferable to be stable with respect to Also, F₂ If a laser is used as a light source, fomblin oil may be selected. Moreover, as a liquid, you may use the liquid whose refractive index with respect to illumination light IL is higher than pure water, for example, the thing of about 1.6-1.8 refractive index. As the liquid, it is also possible to use a supercritical fluid. Further, even if the tip optical element of the projection optical system PL is formed of, for example, a single crystal material of a fluoride compound such as quartz (silica) or calcium fluoride (fluorite), barium fluoride, strontium fluoride, lithium fluoride, and sodium fluoride. Alternatively, it may be formed of a material having a refractive index higher than that of quartz or fluorite (for example, 1.6 or more). As a material having a refractive index of 1.6 or more, for example, sapphire, germanium dioxide, etc. disclosed in International Publication No. 2005/059617 pamphlet, or potassium chloride disclosed in International Publication No. 2005/059618 pamphlet (refractive index is about 1.75), etc. can be used. have.

Further, in the above embodiment, the recovered liquid may be reused, and in this case, it is preferable to provide a filter for removing impurities from the recovered liquid in a liquid recovery device, a recovery pipe, or the like.

Moreover, although the said embodiment demonstrated the case where the exposure apparatus is a liquid immersion type exposure apparatus, it is not limited to this, A dry type exposure apparatus which exposes the wafer W without passing through liquid (water). can also be employed.

Moreover, in the said embodiment, the wafer stage WST (moving body), the measurement stage MST (another moving body), the alignment system ((AL1, AL2)₁ ~ AL2₄)), the multi-point AF system 90a, 90b, the Z sensor, the interferometer system 118, and the encoder system 70A to 70F. This is not limited to this. For example, the present invention can also be applied to an exposure apparatus in which a measurement stage MST or the like is not provided. The present invention can be applied as long as it includes a wafer stage (moving body) and some other structural parts among the respective structural parts. For example, for example, an invention that points to a mark detection system can be applied as long as it is an apparatus including at least a wafer stage (WST) and an alignment system. In addition, it goes without saying that the interferometer system and the encoder system do not necessarily have to be both formed.

In addition, in the above embodiment, the spatial image measurement apparatus 45 is separately arranged on different stages, specifically, the wafer stage WST and the measurement stage WST. However, the separately arranged sensor is It is not limited to a spatial image measuring device, and may be, for example, a wavefront aberration measuring device or the like. In addition, the different stages are not limited to the combination of a substrate stage and a measurement stage.

Moreover, although the said embodiment demonstrated the case where this invention was applied to scanning exposure apparatuses, such as a step-and-scan method, it is not limited to this, You may apply this invention to stationary exposure apparatuses, such as a stepper. Even with a stepper or the like, by measuring the position of the stage on which the object to be exposed is mounted with the encoder, it is possible to similarly minimize the occurrence of position measurement errors caused by air fluctuations to almost zero. In this case, it becomes possible to position the stage with high precision based on the correction information for correcting the short-term fluctuations in the encoder measurement values using the interferometer measurement values and the encoder measurement values, and consequently the high-precision reticle pattern on the object. of the warrior becomes possible. The present invention can also be applied to a step-and-stitch reduction projection exposure apparatus for synthesizing a shot area and a shot area, a proximity method exposure apparatus, a mirror projection aligner, and the like. Further, for example, Japanese Patent Application Laid-Open No. 10-163099 and Japanese Patent Application Laid-Open No. Hei 10-214783 (corresponding US Patent No. 6,590,634), Japanese Unexamined Patent Publication No. 2000-505958 (corresponding US Patent No. 5,969,441), As disclosed in U.S. Patent No. 6,208,407 and the like, the present invention can also be applied to a multi-stage type exposure apparatus having a plurality of wafer stages.

In addition, the projection optical system in the exposure apparatus of the above embodiment may be any of equal magnification and magnification as well as a reduction system, and the projection optical system PL may be not only a refractometer but also a reflector system and a catadioptric system, The projected image may be either an upright image or an upright image. Then, the exposure area IA to which the illumination light IL is irradiated through the projection optical system PL is an on axis area including the optical axis AX within the field of view of the projection optical system PL, for example, As disclosed in International Publication No. 2004/107011 pamphlet, an optical system (reflector or hemirefractive system) having a plurality of reflective surfaces and forming an intermediate image at least once is formed in a part thereof, and also having a single optical axis , similar to the so-called inline catadioptric system, the exposure region may be an off-axis region not including the optical axis AX. In addition, although the shape of the above-mentioned illumination area|region and exposure area|region was assumed to be rectangular, it is not limited to this, For example, an arc, a trapezoid, or a parallelogram, etc. may be sufficient.

In addition, the light source of the exposure apparatus of the said embodiment is not limited to an ArF excimer laser, A KrF excimer laser (output wavelength 248 nm), F₂ Laser (output wavelength 157nm), Ar₂ Laser (output wavelength 126 nm), Kr₂ It is also possible to use a pulsed laser light source such as a laser (output wavelength 146 nm), or an ultra-high pressure mercury lamp that emits bright lines such as g-line (wavelength 436 nm) and i-line (wavelength 365 nm). Moreover, a harmonic generator of a YAG laser, etc. can also be used. In addition, as disclosed in, for example, International Publication No. 1999/46835 pamphlet (corresponding U.S. Patent No. 7,023,610), as vacuum ultraviolet light, a single wavelength in the infrared region or visible region oscillated from a DFB semiconductor laser or a fiber laser. For example, a harmonic wave that is amplified by a fiber amplifier doped with erbium (or both erbium and ytterbium) and wavelength-converted into ultraviolet light using a nonlinear optical crystal may be used.

In addition, in the said embodiment, as illumination light IL of an exposure apparatus, it cannot be overemphasized that it is not limited to light with a wavelength of 100 nm or more, It goes without saying that light with a wavelength of less than 100 nm may be used. For example, recently, in order to expose a pattern of 70 nm or less, an SOR or plasma laser is used as a light source to generate EUV (Extreme Ultraviolet) light in the soft X-ray region (eg, a wavelength range of 5 to 15 nm). Together with Sikkim, development of an EUV exposure apparatus using a total reflection reduction optical system designed below the exposure wavelength (eg 13.5 nm), and a reflective mask is being made. In this apparatus, a configuration in which scan exposure is performed by synchronously scanning a mask and a wafer using arc illumination is considered, and therefore the present invention can be preferably applied to such an apparatus. In addition, this invention is applicable also to the exposure apparatus which uses charged particle beams, such as an electron beam or an ion beam.

Incidentally, in the above-described embodiment, a light-transmitting mask (reticle) in which a predetermined light-shielding pattern (or phase pattern/photosensitive pattern) is formed on a light-transmitting substrate is used, but instead of this reticle, for example, the United States As disclosed in Patent No. 6,778,257, an electronic mask (also called a variable shaping mask, an active mask, or an image generator, For example, you may use a DMD (Digital Micro-mirror Device) etc. which are a type of a non-light-emitting type image display element (spatial light modulator) etc.).

Further, for example, as disclosed in International Publication No. 2001/035168 pamphlet, the present invention is also applied to an exposure apparatus (lithography system) that forms a line-and-space pattern on a wafer by forming an interference fringe on the wafer. can do.

Further, as disclosed in, for example, Japanese Unexamined Patent Publication No. 2004-519850 (corresponding U.S. Patent No. 6,611,316), two reticle patterns are synthesized on a wafer through a projection optical system, and a single scan exposure is performed on the wafer. The present invention can also be applied to an exposure apparatus that double-exposes one shot region almost simultaneously.

In addition, the apparatus for forming a pattern on an object is not limited to the above-described exposure apparatus (lithography system), for example, the present invention can also be applied to an apparatus for forming a pattern on an object by an inkjet method.

In the above embodiment, the object to be patterned on (the object to be exposed to which the energy beam is irradiated) is not limited to the wafer, and may be another object such as a glass plate, a ceramic substrate, a film member, or a mask blank.

The use of the exposure apparatus is not limited to an exposure apparatus for semiconductor manufacturing, for example, an exposure apparatus for liquid crystal that transfers a liquid crystal display element pattern to a rectangular glass plate, an organic EL, a thin film magnetic head, an imaging element (CCD, etc.), a micro It can also be widely applied to exposure apparatus for manufacturing machines, DNA chips, and the like. In addition, in order to manufacture reticles or masks used in micro devices such as semiconductor devices, light exposure apparatuses, EUV exposure apparatuses, X-ray exposure apparatuses, and electron beam exposure apparatuses, etc., circuit patterns are transferred to glass substrates or silicon wafers. The present invention can also be applied to an exposure apparatus.

In addition, the measuring apparatus and measuring method of this invention are not limited to an exposure apparatus, The sample in another substrate processing apparatus (for example, a laser repair apparatus, a board|substrate inspection apparatus, etc.) or other precision machine It can be widely applied also to apparatuses provided with a movable body, such as a stage moving in a plane, such as a positioning apparatus and a wire bonding apparatus.

Further, the exposure apparatus (pattern forming apparatus) of the above embodiment is manufactured by assembling various subsystems including each of the components recited in the claims of the present application so as to maintain predetermined mechanical precision, electrical precision, and optical precision. In order to ensure these various precisions, before and after this assembly, adjustments to achieve optical precision for various optical systems, adjustments for achieving mechanical precision for various mechanical systems, and adjustments to achieve electrical precision for various electrical systems Adjustment is made. The assembly process from the various subsystems to the exposure apparatus includes a mechanical connection between the various subsystems, a wiring connection of an electric circuit, a piping connection of an air pressure circuit, and the like. It goes without saying that before the assembly process from these various subsystems to the exposure apparatus, there is an individual assembly process for each subsystem. When the assembling process of the various subsystems into the exposure apparatus is completed, comprehensive adjustment is performed to ensure various accuracies of the exposure apparatus as a whole. In addition, it is preferable to manufacture the exposure apparatus in a clean room in which temperature, cleanliness, etc. are managed.

In addition, all publications concerning the exposure apparatus etc. which were cited in the said embodiment, the publication of an international publication pamphlet, the US patent application publication specification, and the US patent specification are referred to, and let it be a part of description of this specification.

Next, embodiment of the manufacturing method of the device which uses the above-mentioned exposure apparatus (pattern forming apparatus) in a lithography process is demonstrated.

Fig. 39 shows a flow chart of a manufacturing example of a device (a semiconductor chip such as an IC or LSI, a liquid crystal panel, a CCD, a thin-film magnetic head, a micromachine, etc.). As shown in FIG. 39 , first, in step 201 (design step), device function/performance design (eg, semiconductor device circuit design, etc.) is performed, and pattern design for realizing the function is performed. do. Then, in step 202 (mask production step), a mask on which the designed circuit pattern is formed is produced. On the other hand, in step 203 (wafer manufacturing step), a wafer is manufactured using a material such as silicon.

Next, in step 204 (wafer processing step), using the mask and wafer prepared in steps 201 to 203, an actual circuit or the like is formed on the wafer by a lithography technique or the like, as will be described later. Then, in step 205 (device assembling step), device assembly is performed using the wafer processed in step 204 . In this step 205, processes such as a dicing process, a bonding process, and a packaging process (chip encapsulation) are included as needed.

Finally, in step 206 (inspection step), tests such as operation confirmation test and durability test of the device created in step 205 are performed. After these processes, the device is completed and shipped.

Fig. 40 shows a detailed flow example of the step 204 in the semiconductor device. In Fig. 40, in step 211 (oxidation step), the surface of the wafer is oxidized. In step 212 (CVD step), an insulating film is formed on the wafer surface. In step 213 (electrode formation step), an electrode is formed on the wafer by vapor deposition. In step 214 (ion implantation step), ions are implanted into the wafer. Each of the above steps 211 to 214 constitutes a pre-processing step of each step of the wafer processing, and is selected and executed according to the processing required in each step.

In each step of the wafer process, when the above-mentioned pre-processing process is finished, the post-processing process is performed as follows. In this post-processing step, first, in step 215 (resist formation step), a photosensitive agent is applied to the wafer. Subsequently, in step 216 (exposure step), the circuit pattern of the mask is transferred to the wafer by the exposure apparatus (pattern forming apparatus) and the exposure method (pattern forming method) described above. Next, in step 217 (developing step), the exposed wafer is developed, and in step 218 (etching step), the exposed member in portions other than the portion where the resist remains is removed by etching. Then, in step 219 (resist removal step), the resist, which is no longer etched, is removed.

By repeating these pre-treatment steps and post-treatment steps, multiple circuit patterns are formed on the wafer.

When the device manufacturing method of this embodiment described above is used, the exposure apparatus (pattern forming apparatus) and the exposure method (pattern forming method) of the above embodiment are used in the exposure step (step 216), so that the superimposition accuracy is maintained high. While doing so, high-throughput exposure can be performed. Accordingly, it is possible to improve the productivity of the high-density micro-device in which the micro-pattern is formed.

<b>Industrial Applicability</b>

As described above, the measuring apparatus and measuring method of the present invention are suitable for measuring a position in a plane of a moving object holding and moving an object and a position in a direction orthogonal to the plane. Further, the processing apparatus and processing method of the present invention are suitable for performing a predetermined processing on an object mounted on a movable body moving in a plane. Further, the pattern forming apparatus and pattern forming method of the present invention are suitable for forming a pattern on an object. Moreover, the exposure apparatus and exposure method of this invention, and a device manufacturing method are suitable for manufacturing electronic devices, such as a semiconductor element or a liquid crystal display element.