Light emitting body light emitting element portion and light emitting display device using same

Light emitting body, light emitting element portion, and light emitting display device using the same

1A to 1H are cross-sectional views partially illustrating various types of layer structures of a light emitting body according to a first embodiment of the present invention;

2A to 2H are cross-sectional views partially illustrating various types of layer structures of the light emitting body according to the first embodiment;

3A to 3H are cross-sectional views partially illustrating various types of layer structures of the light emitting body according to the first embodiment of the present invention;

4A to 4H are cross-sectional views partially illustrating various types of layer structures of the light emitting body according to the first embodiment of the present invention;

5A to 5H are cross-sectional views partially illustrating various types of layer structures of a light emitting body according to a second embodiment of the present invention;

6A to 6H are cross-sectional views partially illustrating various types of layer structures of a light emitting body of a second embodiment of the present invention;

7A to 7H are views of various forms of a light emitting body according to a second embodiment of the present invention; A cross-sectional view partially illustrating the layer structures.

8A to 8H are cross-sectional views partially illustrating various types of layer structures of a light emitting body according to a second embodiment of the present invention;

9A and 9C are cross-sectional views illustrating the structure of a light emitting body according to a third embodiment of the present invention, and FIG. 9B is a plan view thereof.

10A and 10C are cross-sectional views illustrating a structure of a light emitting body according to a third embodiment of the present invention, and FIG. 10B is a plan view thereof.

11A and 11C are cross-sectional views illustrating the structure of a light emitting body according to a third embodiment of the present invention, and FIG. 11B is a plan view thereof.

12A and 12C are cross-sectional views illustrating the structure of a light emitting body according to a third embodiment of the present invention, and FIG. 12B is a plan view thereof.

13A and 13C are cross-sectional views illustrating a structure of a light emitting body according to a third embodiment of the present invention, and FIG. 13B is a plan view thereof.

14A and 14C are cross-sectional views illustrating the structure of a light emitting body according to a third embodiment of the present invention, and FIG. 14B is a plan view thereof.

Fig. 15A is a cross-sectional view of a group of light-emitting elements conceptually illustrating a group of light-emitting elements according to a fourth embodiment of the present invention, and Fig. 15B is a plan view thereof;

Fig. 16A is a cross-sectional view of a group of other light-emitting elements conceptually illustrating a group of other light-emitting elements according to a fourth embodiment of the present invention, and Fig. 16B is a plan view thereof.

17A is a conceptual view of a group of different light emitting devices according to a fourth embodiment of the present invention; It is a cross-sectional view of a group of different light emitting elements illustrated by , and FIG. 17B is a plan view thereof.

18A and 18C are cross-sectional views of a light emitting body according to a fifth embodiment of the present invention, and FIG. 18B is a plan view thereof.

19A and 19C are cross-sectional views of another light emitting body according to a fifth embodiment of the present invention, and FIG. 19B is a plan view thereof.

20A and 20C are cross-sectional views of another light emitting body according to a fifth embodiment of the present invention, and FIG. 20B is a plan view thereof.

21A and 21C are cross-sectional views of another light emitting body according to a fifth embodiment of the present invention, and FIG. 21B is a plan view thereof.

22A and 22C are cross-sectional views of another light emitting body according to a fifth embodiment of the present invention, and FIG. 22B is a plan view thereof.

23A and 23C are cross-sectional views of another light emitting body according to a fifth embodiment of the present invention, and FIG. 23B is a plan view thereof.

24A and 24C are cross-sectional views of another light emitting body according to a fifth embodiment of the present invention, and FIG. 24B is a plan view thereof.

25A and 25C are cross-sectional views of another light emitting body according to a fifth embodiment of the present invention, and FIG. 25B is a plan view thereof.

26A is a cross-sectional view conceptually illustrating a group of light emitting elements according to a sixth embodiment of the present invention, and FIG. 26B is a plan view thereof.

27A is a conceptual view of a group of other light emitting devices according to a sixth embodiment of the present invention; is a cross-sectional view exemplified by , and Fig. 27B is a plan view thereof.

28A is a cross-sectional view conceptually illustrating another group of light emitting devices according to a sixth embodiment of the present invention, and FIG. 28B is a plan view thereof.

29A is a cross-sectional view conceptually illustrating a light emitting body made of a group of light emitting elements according to a seventh embodiment of the present invention, and FIG. 29B is a plan view thereof.

30A is a cross-sectional view of a light emitting device according to an eighth embodiment of the present invention, and FIG. 30B is a plan view thereof.

Fig. 31 is a plan view illustrating the positional relationship between the light emitting element portion and wirings shown in Figs. 30A and 30B according to the ninth embodiment of the present invention;

32 is a plan view illustrating a positional relationship between another light emitting element portion and wirings according to a ninth embodiment of the present invention;

Fig. 33 is a plan view illustrating a positional relationship between another light emitting element portion and wirings according to a ninth embodiment of the present invention;

Fig. 34 is a circuit diagram showing the connection of wirings to the light emitting element portion and the light emitting element portion according to the tenth embodiment of the present invention;

Fig. 35 is a circuit diagram showing the connection of wirings to another light emitting element portion and the light emitting element portion according to the tenth embodiment of the present invention;

Fig. 36 is a circuit diagram showing another light emitting element portion and the connection of wirings to the light emitting element portion according to the tenth embodiment of the present invention;

37 is another light emitting device unit and a light emitting device unit according to a tenth embodiment of the present invention; A circuit diagram showing the connections of the wires to .

Fig. 38 is a circuit diagram showing another light emitting element portion and the connection of wirings to the light emitting element portion according to the tenth embodiment of the present invention;

Fig. 39 is a circuit diagram showing another light emitting element portion and wirings to the light emitting element portion according to the tenth embodiment of the present invention;

Fig. 40 is a cross-sectional view of an arrangement of light emitting elements functioning to produce color according to an eleventh embodiment of the present invention;

Fig. 41 is also a cross-sectional view of an arrangement of light emitting elements functioning to produce color according to an eleventh embodiment of the present invention;

42 is also a cross-sectional view of an arrangement of light emitting elements functioning to produce color according to an eleventh embodiment of the present invention;

Fig. 43 is a cross-sectional view illustrating an arrangement of a light emitting element for generating a color and a layer structure thereof;

Fig. 44 is a cross-sectional view illustrating an arrangement of another light emitting element for generating a color and a layer structure thereof;

45 is a cross-sectional view illustrating an arrangement of another light emitting element for generating a color and a layer structure thereof;

46 is a cross-sectional view illustrating a positional relationship between a substrate and a light emitting body according to a twelfth embodiment of the present invention;

47 also shows a top view between a substrate and another illuminant according to a twelfth embodiment of the present invention. A cross-sectional view illustrating a tooth relationship.

Fig. 48 is a cross-sectional view illustrating the structure of a light emitting body (light emitting element) according to a thirteenth embodiment of the present invention;

Fig. 49 is also a cross-sectional view illustrating the structure of another light emitting body (light emitting element) according to the thirteenth embodiment of the present invention.

50 is a plan view illustrating a structural relationship between a light emitting element portion and its wiring according to a fourteenth embodiment of the present invention;

51A, 51B and 51C are cross-sectional views illustrating a method of manufacturing a light emitting element portion in an initial stage according to a sixteenth embodiment of the present invention;

52A, 52B and 52C are also cross-sectional views illustrating a method of manufacturing a light emitting element portion according to a sixteenth embodiment of the present invention;

53A and 53B are also cross-sectional views illustrating a method of manufacturing a light emitting element part according to a sixteenth embodiment of the present invention.

54A and 54B are also cross-sectional views illustrating a method of manufacturing a light emitting element part according to a sixteenth embodiment of the present invention.

55A and 55B are also cross-sectional views illustrating a method of manufacturing a light emitting element part according to a sixteenth embodiment of the present invention.

*Explanation of symbols for main parts of the drawing*

11: substrate 21: transparent electrode layer

22: lower electrode charge 31: light emitting layer

33: hole injection layer

<background-art><p>(Field of Invention) </p><p>BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light emitting body, a light emitting element, and a light emitting display device using the same, and more particularly, to a light emitting body and a light emitting element portion for securing a practical light emission duration, and a light emitting display device using the light emitting body and the light emitting element.</p><p>This application claims priority to Japanese Patent Application No. 2001-051410, filed on February 27, 2001, which is incorporated herein by reference.</p><p>(Description of related technology)</p><p>In general, as a self-emitting body used in a display device, a field emission device and an electroluminescence (EL) device may be used. EL devices are classified into two types of devices, one is an organic EL device using an organic material as a light emitting layer, and the other is an inorganic EL device using an inorganic material as a light emitting layer.</p><p>An organic EL device is generally composed of an anode, a cathode and an organic EL layer, and the organic EL layer is composed of an organic light emitting compound and is interposed between the anode and the cathode. When a voltage is applied between the anode and the cathode, holes are injected from the anode into the organic EL layer, and electrons are injected from the cathode into the organic EL layer, where the holes and electrons recombine with each other. The molecules of the organic light emitting compound constituting the organic EL layer are excited by the energy generated at this time. Light emission occurs when the excited molecule is inactivated as it becomes a ground state. The organic EL device is a light emitting body utilizing this light emission phenomenon.</p><p>The organic EL layer comprises an organic layer called a light emitting layer in which light is emitted when holes and electrons recombine together, and an organic layer called a hole transport layer in which holes are easily injected into the organic EL layer and electrons cannot easily move therein; It has a single-layer structure or a multi-layer structure including at least one of an organic layer referred to as an electron transport layer in which electrons are easily injected into the EL layer and holes cannot easily migrate therein.</p><p>Recently, organic EL devices have been rapidly developed and are being commercialized. In such an organic EL device, a thin film made of a hole injection material such as triphenyldiamine (TPO) is basically deposited on a transparent electrode (hole injection electrode, that is, functioning as an anode) made of indium tin oxide (ITO) or the like. , and thereafter, the aluminol-quinolinol complex (Alq₃) is formed, and a metal electrode (electron injection electrode, that is, functioning as a cathode) is added on the light emitting layer using silver (Ag), magnesium (Mg), etc. that provide a small work function. is formed negatively. Such an organic EL device is several hundred cd/m by applying a low voltage of about 10V.² to tens of thousands of cd/m²It can provide very high luminance of , and is expected to be used in electrical components and/or home appliances such as automobiles, two-wheeled vehicles, and airplanes. In this above-mentioned organic EL device, for example, the organic layer serving as the light emitting layer includes a scanning (common line) electrode serving as an electron injecting electrode, and a hole injecting electrode, i.e., data (segment line) serving as a transparent electrode. (segment line)) is placed between the electrodes.</p><p>Additionally, a display device using the organic EL device described above can be roughly classified into two types of display devices, one of which is a matrix type display device, and the other is a segment type display device. In a matrix type display device, dot-matrix display is performed by arranging scanning electrodes and data electrodes in a dot matrix form in which information such as images, characters, etc. is displayed in the form of a set of pixels composed of dots. In a segmented display device, predetermined content for a specific purpose is displayed as individual and independent display units having a predetermined shape and size. A segmented display device operates by a static driving method to display display units independently and individually, whereas a dot matrix display device operates by a dynamic driving method in which data lines and scanning lines are driven in a time division manner. must be driven by the dynamic driving method).</p><p>The light emitting body constituting the light emitting element portion of the organic EL device can also be classified into two types of light emitting body, one is a substrate surface light emitting body type, and the other is a film surface light emitting body type. In the substrate surface light-emitting body, a transparent electrode is formed on a transparent substrate, a light-emitting layer is formed on the transparent electrode, a metal electrode is additionally formed on the light-emitting layer, and the light generated in the light-emitting layer is transmitted to the outside through the transparent electrode and the transparent substrate. and is configured to be permeable. On the other hand, in the film surface light-emitting body, a metal electrode is formed on a substrate, a light-emitting layer is formed on the metal electrode, a transparent electrode is additionally formed on the light-emitting layer, and the light generated in the light-emitting layer is transmitted and transmitted through the transparent electrode. Then, it is configured to be transmitted and transmitted to the outside from the side of the film disposed opposite to the surface of the substrate. An example of a substrate surface illuminant is disclosed in the journal of "Applied Physics Journal No. 51, pp. 913 - 915, 1987 (Appl. Phys. Lett., No. 51, pp.913-915 (1987))" have. An example of a membrane surface illuminant is disclosed in the Proceedings of "Journal of Applied Physics, No. 65, pp. 2636 - 2638, 1994 (Appl. Phys. Lett., No. 65, pp. 2636-2638 (1994))" has been</p><p>However, a fluorescent organism used as a material for a light emitting layer of a conventional organic EL device used as a light emitting body or light emitting element is weak to moisture, oxygen and the like. Additionally, the properties of a conventional electrode (hereinafter referred to as a counter electrode) having a hole injection layer or an electron injection layer disposed directly on the light emitting layer or interposed between the light emitting layer and the counter electrode is easily deteriorated by oxidation. For this reason, when the conventional organic EL device is operated in the atmosphere, its light emitting characteristic deteriorates rapidly. When oxygen or moisture is present in the vicinity of a conventional organic EL device, organic materials are easily degraded by oxidation causing film peeling and growth of dark-spots, and as a result, no light is emitted. A phenomenon that cannot be This causes a problem of shortening the life of the organic EL device.</p><p>Therefore, in order to obtain a practical organic EL device, certain improvements are needed to prevent moisture and oxygen from penetrating the light emitting layer and prevent the counter electrodes from being oxidized.</p><p>In order to solve this problem, a method of encapsulating an organic EL device to be sealed in an oxygen barrier state is disclosed, for example, in Japanese Patent Laid-Open No. 5-182759, wherein the organic EL device has a moisture-resistant photocurable resin layer and a substrate with low moisture permeability and adhered on top of the photocurable resin layer. Another method for encapsulating an organic EL device is disclosed in Japanese Patent Laid-Open No. 5-41281, wherein the organic EL device is placed in an inert liquid prepared using a fluorocarbon oil containing a dehydrating agent such as a synthetic zeolite. Another method of encapsulating an organic EL device is disclosed in Japanese Patent No. 2800813, wherein the organic EL device is coated with a fluorine polymer protective layer, and has a cover structure on the protective layer and is filled with an inert medium. A seal is further formed.</p><p>However, it is impossible to completely remove moisture and/or oxygen existing in the vicinity of the organic EL device only by applying such a sealing technique as described above. As a result, it is difficult to ensure sufficient light emission lifetime of the conventional organic EL device. Another problem is that, when such a conventional encapsulation technique is employed, an increase in the thickness of the display device itself using such an organic EL device is inevitable due to an additionally attached sealing material. Therefore, it is desirable to secure a long luminescence duration without using such an encapsulation process of the organic EL device.</p></background-art><tech><p>(Summary of the invention)</p><p>In view of the above, it is an object of the present invention to secure a practical long luminescence duration without using the encapsulation process, and to secure a longer luminescence duration by using the encapsulation process. A light emitting display device constituting an EL device is provided. </p><p>According to a first aspect of the invention, </p><p>board and</p><p>a transparent electrode;</p><p>a luminescent material,</p><p>comprising an upper electrode; </p><p>The transparent electrode is formed on the substrate and the light emitting material and the upper electrode are sequentially formed on the transparent electrode,</p><p>The transparent electrode as the main component "In_2-xSn_xO_3-yIt is made of a mixture of oxides of tin and indium having a structural formula of ", and the value of "y" is set to exist within a range not smaller than 0.05 and not larger than 0.2.</p><p>According to a second aspect of the invention, </p><p>board and</p><p>a transparent electrode;</p><p>a luminescent material,</p><p>comprising a lower electrode; </p><p>The lower electrode is formed on the substrate and the light emitting material and the transparent electrode are formed on the lower electrode in this order,</p><p>The transparent electrode as the main component "In_2-xSn_xO_3-yIt is made of a mixture of tin and indium oxide having a structural formula of ", and the value of "y" is set to exist within a range not less than 0.05 and not greater than 0.2.</p><p>From the foregoing, a preferred mode is one in which a layer made of a hygroscopic material is formed adjacent to the transparent electrode.</p><p>Also, a preferred mode is that the light-emitting element portion comprising a layer of a transparent electrode, a layer of a light-emitting material and a layer of upper/lower electrodes is an electro-optical device. </p><p>Another preferred mode is that an electro-optical device using an organic material as a light emitting material has a structure in which light is emitted from a thin film made of an organic material when an electric current is supplied to the thin film.</p><p>Also, a preferred mode is that a hole injection layer is formed between the layer of the transparent electrode and the layer of the light emitting material.</p><p>Also, a preferred mode is for an electron transporting layer to be formed between the layer of light-emitting material and the layer of the upper/lower electrode.</p><p>Also, a preferred mode is to use the light emitting body according to the first aspect or the second aspect as the light emitting element, comprising three groups of light emitting elements comprising the first light emitting element group, the second light emitting element group and the third light emitting element group and each of these light emitting element groups are independently stacked and each made of at least one of the light emitting elements and are respectively arranged in parallel on a substrate in a plane, the first light emitting element group emitting light in a red wavelength region, and the second light emitting element The group emits light in the green wavelength region, and the third light emitting element group emits light in the blue wavelength region. </p><p>Also, a preferred mode is one in which each of the groups of light emitting elements is configured to simultaneously emit light in each of the wavelength regions of red, green and blue. </p><p>Also, a preferred mode is that a mixed color light including light of blue, red and green colors generated by each of a plurality of light emitting element groups arranged in parallel on a substrate is emitted.</p><p>According to a third aspect of the present invention, in a light emitting element portion using as a light emitting element the light emitting body according to the first or second aspect comprising a layer of a transparent electrode, a layer of a light emitting material, and a layer of an upper electrode, the The light emitting element portion is provided with a light emitting element portion comprising a light emitting element and a current supply element electrically connected to and used to supply a current to the light emitting element.</p><p>As described above, the preferred mode further includes a switching element connected to the current supply element having a function of determining whether or not to supply current to the light emitting element comprising a layer of a transparent electrode and a layer of a light emitting material and an upper electrode layer will do</p><p>Further, a preferred mode is to further include a wiring connected to the current supply element and used to supply a current to the current supply element and a wiring supplying voltage information on the ON/OFF state to the switching element. </p><p>According to a fourth aspect of the present invention, in the light emitting display device having a plurality of light emitting element portions according to the third aspect, voltage information on ON/OFF states is provided to a wiring for supplying a current to a current supply element and a switching element. A light emitting display device in which wirings for supply are arranged in a matrix form is provided.</p><p>In the structure described above, the material "In as a material for the transparent electrode layer constituting the laminated light emitting body._2-xSn_xO_3-yBy using " and setting the "y" value within the range of 0.06 to 0.2 , it is possible to secure a practical luminescence duration, that is, a luminous body and a light emitting element whose luminous lifetime can be improved; It is possible to obtain a light emitting display device using a light emitting body and a light emitting element.</p><p>In a structure different from the above, by using a method of encapsulating the light emitting body and the light emitting element, the light emission duration can be extended, and even when the encapsulation method is not used, a long light emission duration that can be used commercially can be provided. It is possible to obtain an organic EL device that has an existing organic EL device and a display device using the organic EL device device.</p><p>and the above and other objects, advantages and characteristics of the present invention will become more apparent from the following detailed description with reference to the accompanying drawings.</p></tech>

<p>(Detailed description of the preferred embodiment)</p><p>The most preferred modes of carrying out the present invention are explained in more detail through various embodiments with reference to the accompanying drawings.</p><p><u>first embodiment</u></p><p>The layer structure of the light emitting body will be described with reference to FIGS. 1 to 4H. 1 to 1H are cross-sectional views partially illustrating various types of layer structures of a light emitting body according to a first embodiment of the present invention. 2A to 2H are also cross-sectional views partially illustrating various types of layer structures of the light emitting body according to the first embodiment. 3A to 3H are cross-sectional views partially illustrating various types of layer structures of the light emitting body according to the first embodiment. 4A to 4H are cross-sectional views partially illustrating various types of layer structures of the light emitting body according to the first embodiment. Each size of the layers shown in each figure and the shading pattern shown in each figure are merely for providing the positional relationship of the layers, and these are provided for reference only. Additionally, even in the case of an electrode having no layer structure, since it has overlapping portions forming a layer in some cases, such an electrode is expressed by adding the word "layer" to the electrode. The light emitting body shown in FIGS. 1A to 4H emits light toward the upward direction on the substrate 11 and the marks can be viewed from the direction of the upper surface of the layers stacked on the substrate 11 toward the lower surface thereof. It is in the form of a film surface illuminant.</p><p>In the light emitting body shown in FIG. 1A, a lower electrode layer 22 is formed on a substrate 11, a light emitting layer 31 functioning also as a hole injection layer and an electron injection layer is formed on the lower electrode layer 22, and thereafter, The transparent electrode layer 21 is configured to be formed on the light emitting layer 31 . The light-emitting layer 31 corresponds to the above-described light-emitting material layer. As a material for the transparent electrode layer 21, the material In_2-xSn_xO_3-y(0.05y0.2) is used, which contains a mixture of oxides of tin and indium as main components.</p><p>In FIG. 1B , an anode buffer layer 41 is additionally formed between the light emitting layer 31 and the transparent electrode layer 21 . Also, in Fig. 1C, a protective layer 42 is additionally formed on the stacked layers shown in Fig. 1A. Also, in Fig. 1D, a protective layer 42 is additionally formed on the stacked layers shown in Fig. 1B. 1E, 1F, 1G and 1H, a hygroscopic reinforcing layer 43 is formed on the upper surface of the transparent electrode layer 21 shown in FIGS. 1A, 1B, 1C and 1D, respectively. Accordingly, in FIGS. 1G and 1H , the hygroscopic reinforcing layer 43 is interposed between the transparent electrode layer 21 and the protective layer 42 .</p><p>2A, on the substrate 11, the lower electrode layer 22, the light emitting layer 32 functioning also as an electron transport layer, the hole injection layer 33, and the transparent electrode layer 21 are formed in this order. In this case, the light-emitting layer 32 and the hole injection layer 33 correspond to the above-described light-emitting material layer. Other structures are the same as the case shown in FIG. 1A.</p><p>In FIG. 2B , an anode buffer layer 41 is formed between the light emitting layer 32 and the transparent electrode layer 21 shown in FIG. 2A . In Fig. 2C, a protective layer 42 is formed on the stacked layers shown in Fig. 2A. In Fig. 2D, it is formed on the stacked layers shown in Fig. 2B. In FIG. 2E, a hygroscopic reinforcing layer 43 is formed on the transparent electrode layer 21 shown in FIG. 1A. Similarly, in Figs. 2f, 2g and 2h, a hygroscopic reinforcing layer 43 is formed on the transparent electrode layer 21 shown in Figs. 2b, 2c and 2d, respectively. Accordingly, in FIGS. 2G and 2H , the hygroscopic reinforcing layer is interposed between the protective layer 42 and the transparent electrode layer 21 .</p><p>3A, on the substrate 11, the lower electrode layer 22, the electron transport layer 35, the light emitting layer 34 functioning also as a hole injection layer, and the transparent electrode layer 21 are sequentially formed. In this case, the electron transporting layer 35 and the light emitting layer 34 correspond to the above-described light emitting material layer. Other structures are the same as the case shown in FIG. 1A.</p><p>In FIG. 3B , an anode buffer layer 41 is formed between the light emitting layer 34 and the transparent electrode layer 21 . In Fig. 3C, a protective layer 42 is formed on the stacked layers shown in Fig. 3A. In Fig. 3D, a protective layer 42 is formed on the stacked layers shown in Fig. 3B. In Fig. 3E, a hygroscopic reinforcing layer 43 is formed on the transparent electrode layer 21 shown in Fig. 3A. Similarly, in Figs. 3F, 3G and 3H, a hygroscopic reinforcing layer 43 is formed on the transparent electrode layer 21 shown in Figs. 3B, 3C and 3D, respectively. Accordingly, in FIGS. 3G and 3H , the hygroscopic reinforcing layer 43 is interposed between the protective layer 42 and the transparent electrode layer 21 .</p><p>In Fig. 4a, on the substrate 11, the lower electrode layer 22, the electron transport layer 35, the light emitting layer 36 which is a non-functional monolayer, the hole injection layer 33 and the transparent electrode layer 21 are formed in order. In this case, the electron transport layer 35, the hole injection layer 33, and the light emitting layer 36 correspond to the above-described light emitting material layer. Other structures are the same as in the case shown in FIG. 1A.</p><p>In FIG. 4B , an anode buffer layer 41 is formed between the light emitting layer 36 and the transparent electrode layer 21 . In Fig. 4C, a protective layer 42 is formed on the stacked layers shown in Fig. 4A. In Fig. 4D, a protective layer 42 is formed on the stacked layers shown in Fig. 4B. In Fig. 4E, a hygroscopic reinforcing layer 43 is formed on the transparent electrode layer 21 shown in Fig. 4A. Similarly, in Figs. 4F, 4G and 4H, a hygroscopic reinforcing layer 43 is formed on the transparent electrode layer 21 shown in Figs. 4B, 4C and 4D, respectively. Accordingly, in FIGS. 4G and 4H , the hygroscopic reinforcing layer 43 is interposed between the transparent electrode layer 21 and the protective layer 42 .</p><p><u>second embodiment</u></p><p>The layer structure of the light emitting body of the second embodiment will be described with reference to Figs. 5A to 8H. 5A to 5H are cross-sectional views partially illustrating various types of layer structures of a light emitting body according to a second embodiment of the present invention. 6A to 6H are cross-sectional views partially illustrating various types of layer structures of a light emitting body according to a second embodiment of the present invention. 7A to 7H are cross-sectional views partially illustrating various types of layer structures of a light emitting body according to a second embodiment of the present invention. 8A to 8H are cross-sectional views partially illustrating various types of layer structures of a light emitting body according to a second embodiment of the present invention. 5A to 5H to 8A to 8H, the light is emitted toward the downward direction on the substrate 11 and the display is of the lower side of the layers laminated on the substrate 11 made of, for example, glass It is in the form of a substrate surface illuminant that can be seen from the direction.</p><p>In Fig. 5A, in the light emitting body, a transparent electrode layer 31 is formed on a substrate 11 and a light emitting layer 31 functioning also as a hole injection layer, an electron injection layer is formed on a transparent substrate 21, and an upper electrode layer 23 ) is formed on the light emitting layer 31 . In this case, the light-emitting layer 31 and the electron transporting layer, which also function as the hole injection layer, correspond to the above-described light-emitting material layer. The structure of the transparent electrode 21 is the same as that shown in FIGS. 1A to 1H , and thus a description thereof will be omitted.</p><p>In FIG. 5B , an anode buffer layer 41 is formed between the transparent electrode layer 21 and the light emitting layer 31 . In Fig. 5C, a protective layer 42 is formed on the stacked layers shown in Fig. 5A. In Fig. 5D, a protective layer 42 is formed on the stacked layers shown in Fig. 5B. In FIG. 5E , a hygroscopic reinforcing layer 43 is formed under the transparent electrode layer 21 shown in FIG. 5A . Similarly, in FIGS. 5F, 5G, and 5H, a hygroscopic reinforcing layer 43 is formed under the transparent electrode layer 21 shown in FIGS. 5B, 5C and 5D, respectively. Accordingly, in FIGS. 5E to 5H , the hygroscopic reinforcing layer 43 is interposed between the substrate 11 and the transparent electrode layer 21 .</p><p>6A, a transparent electrode layer 21, a hole injection layer 33, a light emitting layer 32 functioning also as an electron transport layer, and an upper electrode layer 23 are sequentially formed on a substrate 11 in FIG. In this case, the light-emitting layer 32 functioning also as an electron transporting layer corresponds to the above-described light-emitting material layer. The structure of the transparent electrode layer 21 is the same as that shown in FIGS. 1A to 1H , and thus a description thereof will be omitted.</p><p>In FIG. 6B , the anode buffer layer 41 is formed between the hole injection layer 33 and the transparent electrode layer 21 . In Fig. 6C, a protective layer 42 is formed on the stacked layers shown in Fig. 6A. In Fig. 6D, a protective layer 42 is formed on the stacked layers shown in Fig. 6B. In FIG. 6E , a hygroscopic reinforcing layer 43 is formed under the transparent electrode layer 21 shown in FIG. 5A . Similarly, in Figs. 6f, 6g and 6h, a hygroscopic reinforcing layer 43 is formed under the transparent electrode layer 21 shown in Figs. 6b, 6c and 6d, respectively. Accordingly, in FIGS. 6E to 6H , the hygroscopic reinforcing layer 43 is interposed between the substrate 11 and the transparent electrode layer 21 .</p><p>In FIG. 7A , a transparent electrode layer 21 , a light emitting layer 34 functioning also as a hole injection layer, and an upper electrode layer 23 are formed on a substrate 11 . In this case, the light emitting layer 32 functioning also as a hole injection layer corresponds to the above-described light emitting material layer. The structure of the transparent electrode layer 21 is the same as that shown in FIGS. 1A to 1H , and thus a description thereof will be omitted.</p><p>In FIG. 7B , an anode buffer layer 41 is formed between the light emitting layer 34 and the transparent electrode layer 21 . In Fig. 7C, a protective layer 42 is formed on the stacked layers shown in Fig. 7A. In Fig. 7D, a protective layer 42 is formed on the stacked layers shown in Fig. 7B. In FIG. 7E , a hygroscopic reinforcing layer 43 is formed under the transparent electrode layer 21 shown in FIG. 7A . Similarly, in FIGS. 7F, 7G and 7H, a hygroscopic reinforcing layer 43 is formed under the transparent electrode layer 21 shown in FIGS. 7B, 7C and 7D, respectively. Accordingly, in FIGS. 7E to 7H , the hygroscopic reinforcing layer 43 is interposed between the substrate 11 and the transparent electrode layer 21 .</p><p>In FIG. 8A , a transparent electrode layer 21 , a hole injection layer 33 , a single emission layer 36 , an electron transport layer 35 , and an upper electrode layer 23 are sequentially formed on the substrate 11 . In this case, the light-emitting layer 36 corresponds to the light-emitting material layer. The structure of the transparent electrode layer 21 is the same as that shown in FIGS. 1A to 1H , and thus a description thereof will be omitted.</p><p>In FIG. 8B , the anode buffer layer 41 is formed between the hole injection layer 33 and the transparent electrode layer 21 . In Fig. 8C, a protective layer 42 is formed on the stacked layers shown in Fig. 8A. In Fig. 8D, a protective layer 42 is formed on the stacked layers shown in Fig. 8B. In FIG. 8E , a hygroscopic reinforcing layer 43 is formed under the transparent electrode layer 21 shown in FIG. 8A . Similarly, in Figs. 8f, 8g and 8h, a hygroscopic reinforcing layer 43 is formed under the transparent electrode layer 21 shown in Figs. 8b, 8c and 8d, respectively. Accordingly, in FIGS. 8E to 8H , the hygroscopic reinforcing layer 43 is interposed between the substrate 11 and the transparent electrode layer 21 .</p><p><u>third embodiment</u></p><p>The structure of the light emitting body of the third embodiment of the present invention will be described with reference to Figs. 9A to 14C. 9A and 9C are cross-sectional views illustrating the structure of the light emitting body, and FIG. 9B is a plan view of the light emitting body according to the third embodiment. 10A and 10C are cross-sectional views illustrating the structure of the light-emitting body, and FIG. 10B is a plan view of the light-emitting body according to the third embodiment. 11A and 11C are cross-sectional views illustrating the structure of the light emitting body, and FIG. 11B is a plan view of the light emitting body according to the third embodiment. 12A and 12C are cross-sectional views illustrating the structure of the light emitting body, and FIG. 12B is a plan view of the light emitting body according to the third embodiment. 13A and 13C are cross-sectional views illustrating the structure of the light emitting body, and FIG. 13B is a plan view of the light emitting body according to the third embodiment. 14A and 14C are cross-sectional views illustrating the structure of the light emitting body, and FIG. 14B is a plan view of the light emitting body according to the third embodiment. The size of each layer shown in each of the drawings and each pattern illustrated in each of the drawings provide only the positional relationship of the layers, and are provided for reference only. In FIGS. 9A to 14C , components made of the same material as those of FIGS. 1 to 8H or having the same function or structure are assigned the same reference numerals. The components of FIGS. 9A-14C when the component of FIGS. 9A-14C has the same function and the same material as the component of FIGS. 1A-8H, but has a different shape than that of FIGS. 1A-8H. Subscript "a" to the same reference sign assigned to each or "f" is added. Further, in the plan views shown in Figs. 9b, 10b, 11b, 12b, 13b and 14b, a second subscript "e" is additionally assigned to the above reference numeral with a first subscript to represent an end portion of each layer. do.</p><p>Additionally, as will be described later, a plurality of light emitting bodies are formed on the substrate. The substrate is a base body on which a plurality of light emitting bodies and other films or devices are formed. As described above, even in the case of an electrode having no layer structure, since it has overlapping portions forming a layer in some cases, such an electrode is expressed by adding the word "layer" to the electrode.</p><p>In the light emitting bodies 10a to 10f shown in FIGS. 9A to 14C , light is emitted toward the upper direction on the substrate 11 , and the display is displayed from the upper side of the layers stacked on the substrate 11 to the lower side thereof. It is in the form of a film surface emitter that can be </p><p>First, the structure of the light emitting body 10a will be described with reference to FIGS. 9A to 9C .</p><p>9A and 9B, a lower electrode layer 22a is formed on the substrate 11 by a patterning method. A light emitting material layer 30a is formed on the lower electrode layer 22a by a patterning method. The light emitting material layer 30a includes a material layer that emits light by application of an electric current, and may include either an electron transport layer or a hole injection layer. The pattern for the light emitting material layer 30a is larger in size than that for the lower electrode layer 22a, and covers all areas of the pattern for the lower electrode layer 22a. That is, the end portion 30ae of the light emitting material layer 30a is disposed outside the end portion 22ae of the lower electrode layer 22a as shown in Fig. 9B in all its regions.</p><p>A transparent electrode layer 21a is formed on the light emitting material layer 30a by a patterning method. In Fig. 9A, the patterned structure of the transparent electrode layer 21a is not shown, but this means that the pattern is too large to be shown in the range shown in Fig. 9A.</p><p>1A to 1H, as a material for the transparent electrode layer 21a, a material "In_2-xSn_xO_3-y(0.05y0.2)" is used, which contains, as a main component, a mixture of oxides of tin and indium.</p><p>Substances that exhibit hygroscopicity due to their oxygen-deficient properties In_2-xSn_xO_3-y(0.05y0.2) is formed on all regions of the lower electrode layer 22a and the light emitting material layer 30a. Thus, the substance In_2-xSn_xO_3-y(0.05y0.2) absorbs a trace amount of moisture present in the vicinity of the light emitting layer 30a, and thus keeps the light emitting material in a moisture-free state.</p><p>In this embodiment, all regions of the lower electrode layer 22a are covered with the pattern for the light emitting material layer 30a, but even when the lower electrode layer 22 is not partially covered with the light emitting material layer, in the above-described embodiment, The same effect obtained can be achieved. Additionally, in this embodiment, all patterns for the light emitting material layer 30a are covered by the pattern for the electrode layer 21a, but the pattern of the light emitting material layer 30a is partially covered by the pattern for the transparent electrode layer. The same effects obtained above can be achieved even when not covered.</p><p>Additionally, as shown in Fig. 9c, the hygroscopic reinforcing layer 43a is made of a material "In_2-xSn_xO_3-y(0.05y0.2)" may be formed on the transparent electrode layer 21a. The hygroscopicity reinforcing layer 43 receives moisture absorbed by the transparent electrode layer 21a, which makes it possible to reliably keep the light emitting material in a moisture-free state. Additionally, in order to prevent the lower electrode layer 22a or the light emitting material layer 30a from being completely affected by atmospheric moisture and/or oxygen, the case shown in Figs. 1C, 1D, 1G and 1H and Similarly, a protective layer (not shown) may be formed on the transparent electrode layer 21a or the hygroscopic reinforcing layer 43a.</p><p>Next, the structure of another light emitting body 10b of the present invention will be described with reference to Figs. 10A to 10C. First, as shown in FIG. 10A , a lower electrode layer 22a is formed on the substrate 11 by a patterning method as in the case shown in FIG. 9A . The pattern for the light emitting material layer 30b is larger in size than that for the lower electrode layer 22a and covers all areas of the pattern for the lower electrode layer 22a. However, unlike the case shown in Fig. 9B, the pattern for the light emitting material layer 30b is large, and its end portion is not disposed within the size range shown in Fig. 10A. Additionally, a transparent electrode layer 21b is formed on the light emitting layer 30b by a patterning method. Also, unlike the case shown in Fig. 9, the pattern for the transparent electrode layer 21b is smaller in size than that for the light-emitting material layer 30b, but it is larger in size than that for the lower electrode layer 22a, and , covering all regions of the pattern for the lower electrode layer 22a. That is, the end portion 22ae of the lower electrode layer 22a is disposed in the end portion 21be of the transparent electrode layer 21a. As described above, as a material for the transparent electrode layer 21b, the material "In_2-xSn_xO_3-y(0.05y0.2)" is used, which contains a mixture of oxides of tin and indium as main components.</p><p>Substances that exhibit hygroscopicity due to their oxygen-deficient properties In_2-xSn_xO_3-y(0.05y0.2) is formed on all regions of the patterns for the lower electrode layer 22a and the light emitting material layer 30b. Here, the light emitting element portion is a part of the light emitting material layer 30b, which is interposed between the lower electrode layer 22a and the transparent electrode layer 21b, and is applied to the voltage between the lower electrode layer 22a and the transparent electrode layer 21b. light is emitted by In this case, it almost coincides with the portion in contact with the lower electrode layer 22a outside the light emitting material layer 30b. the substance In_2-xSn_xO_3-y(0.05y0.2) absorbs even a trace amount of moisture existing in the vicinity of the light emitting element portion in the light emitting layer 30b, which can keep the light emitting material in a moisture-free state. </p><p>By configuring the light emitting body 10b as above, the pattern for the light emitting material layer 30b covers all the patterns of the lower electrode layer 22a, and at the same time, the pattern for the light emitting material layer 30b is the transparent electrode layer 21b ) does not need to be precisely patterned to be covered by the pattern of ), which makes it easier to manufacture the light emitting body 10b compared to the case shown in FIGS. 9A to 9C , which reduces the manufacturing cost thereof. However, in the part of the pattern for the light emitting material layer 30b that is not covered by the pattern of the transparent electrode layer 21b, moisture cannot be absorbed by the transparent electrode layer 21b. Although this portion is located remote from the light emitting element portion and is not directly related to light emission, peeling of the light emitting material layer 30b occurs due to corrosion of the portion, and in some cases, the It adversely affects the luminous properties. Accordingly, it is suitable that a material for the light emitting layer that is resistant to moisture and/or oxygen is used.</p><p>In this embodiment, all regions of the pattern for the lower electrode layer 22a are covered by the pattern for the light emitting material layer 30b, but the pattern for the lower electrode layer 22a is not in the pattern for the light emitting material layer 30b. Even in the case where it is not partially covered by the Additionally, in this embodiment, all regions of the pattern for the transparent electrode layer 21b are formed on the light emitting material layer 30b, but a part of the pattern for the transparent electrode layer 21b forms the light emitting material layer 30b. Even in the case where it is not formed on the pattern for the above, the same effect as obtained above can be achieved.</p><p>As shown in Figure 10c, the material "In_2-xSn_xO_3-yA hygroscopicity reinforcing layer 43b may be formed on the transparent electrode layer 21b manufactured by "(0.05y0.2)". Here, the hygroscopicity reinforcing layer 43b functions to receive moisture absorbed by the transparent electrode layer 21b in order to further maintain the light emitting material layer 30b in a moisture-free state.</p><p>Additionally, in order to completely keep the lower electrode layer 22a or the luminescent material layer 30b unaffected by atmospheric moisture and/or oxygen, as shown in Figs. 1A to 4H, protection A layer (not shown) may be formed on the transparent electrode layer 21b or the hygroscopic reinforcing layer 43b. </p><p>Next, the structure of another light emitting body 10c will be described with reference to Figs. 11A to 11C. As shown in Fig. 11A, a lower electrode layer 22a is formed on the substrate 11 as in the case shown in Figs. 9A to 9C. A light emitting material layer 30c is formed on the lower electrode layer 22a by a patterning method. Unlike the case shown in Figs. 9A to 9C and Figs. 10A to 10C, the pattern for the light emitting material layer 30c is disposed within the region of the pattern for the lower electrode layer 22a. 11B, the end portion 30ce of the light emitting material layer 30c is in contact with the end portion 44ce of the insulating layer 44c, and the pattern of the insulating layer 44c is that of the lower electrode layer 22a. The upper surface and the upper surface of the substrate 11 are covered. On the pattern for the light emitting material layer 30c, a pattern of the transparent electrode layer 21b is formed to have the same shape as shown in FIG. 10A. As in the above case, the material for the transparent electrode layer 21b is also "In._2-xSn_xO_3-y(0.05y0.2)" is used, which contains, as the main component, a mixture of an oxide of indium and tin.</p><p>In this embodiment, a substance In which exhibits hygroscopicity due to its oxygen-deficient property_2-xSn_xO_3-y(0.05y0.2) is formed on both the pattern for the lower electrode layer 22a and the pattern for the light emitting layer 30c. Thus, the substance In_2-xSn_xO_3-y(0.05y0.2) can absorb even a trace amount of moisture existing in the vicinity of the light emitting material layer 30c, and thus keep the light emitting material in a moisture-free state.</p><p>The light emitting body 10c is constructed in such a way that the lower electrode layer 22a and the light emitting material layer 30c are partially buried in the insulating layer 44c, and thus the upper surface of the light emitting body is kept relatively flat. However, since a new process for forming the insulating layer 44c is added, the manufacturing cost thereof increases accordingly.</p><p>In this embodiment, all regions of the pattern for the light emitting material layer 30c are disposed on the pattern for the lower electrode layer 22a, however, a part of the pattern for the light emitting material layer 30c is formed on the lower electrode layer 22a. Even if it is not formed on the phase, the same effect as obtained above can be achieved. Additionally, also in this embodiment, all regions of the pattern for the light emitting material layer 30c are covered with the transparent electrode layer 21b, but the pattern for the light emitting material layer 30c is not applied to the transparent electrode layer 21b. Similarly, the same effect as described above can be achieved even when it is not partially covered by the</p><p>11c, the hygroscopic reinforcing layer 43c is_2-xSn_xO_3-yIt may be formed on the transparent electrode layer 21b made of (0.05y0.2). Here, the hygroscopicity reinforcing layer 43c functions to receive moisture absorbed by the transparent electrode layer 21b to additionally keep the light emitting material layer 30c free from moisture.</p><p>Additionally, in order to completely keep the lower electrode layer 22a or the luminescent material layer 30c unaffected by atmospheric moisture and/or oxygen, as in the case shown in Figs. 1A to 4H, protection A layer (not shown) may be formed on the transparent electrode layer 21b or the hygroscopic reinforcing layer 43b.</p><p>Next, the structures of another light emitting body 10d will be described with reference to Figs. 12A to 12C. The light emitting body 10d is a modification of the light emitting body 10c shown in FIGS. 11A to 11C . Figures 12a, 12b and 12c respectively correspond to Figures 11a, 11b and 11c, respectively. The light emitting body 10d differs from the above-described light emitting body 10c in that the end portion 44de of the insulating layer 44d is disposed in the end portion 30ce of the light emitting material layer 30c as shown in Fig. 12B. Accordingly, by providing a portion where the pattern for the insulating layer 44d and the pattern for the light emitting material layer 30c overlap each other, the leakage current between the lower electrode layer 22a and the transparent electrode layer 21d due to manufacturing errors is reduced. It is possible to prevent this from occurring. However, since there is a portion where the pattern for the insulating layer 44d and the pattern for the light emitting material layer 30c overlap each other, the flatness of the upper surface of the light emitting body 10d is the case shown in Figs. 11A to 11C. decreases compared to</p><p>Next, the structure of another light emitting body 10e will be described with reference to Figs. 13A to 13C. The light emitting body 10e is a modification of the light emitting body 10b shown in FIGS. 10A to 10C . 13A, 13B and 13C correspond to FIGS. 10A, 10B and 10C, respectively. The light-emitting body 10e differs from the above-described light-emitting body 10b in that the insulating layer 44e is formed on the portion where the light-emitting material layer 30b is exposed.</p><p>That is, as in the case shown in FIGS. 10A to 10C , the pattern for the light emitting material layer 30b is formed on the lower electrode layer 22a grown on the substrate 11 so as to cover all regions of the lower electrode layer 22a. is formed On the pattern for the light emitting material layer 30b, a pattern for the transparent electrode layer 21b is formed so as to cover all surfaces of the lower electrode layer 22a.</p><p>However, in the light emitting body 10e, the end portion 21be of the transparent electrode layer 21b is disposed so as to be in contact with the end portion 44ee of the insulating layer 44e on the pattern for the light emitting body 30b. Consequently, although not shown in Figs. 13A to 13C, the insulating layer 44e covers all exposed areas not covered by the pattern for the transparent electrode layer 21b on the upper surface of the light emitting material layer 30b. As in the above-described embodiments, the material for the transparent electrode layer 21b is also In_2-xSn_xO_3-y(0.05y0.2) is used, which contains a mixture of oxides of tin and indium as main components.</p><p>In this embodiment, a substance In which exhibits hygroscopicity due to its oxygen-deficient property_2-xSn_xO_3-y(0.05y0.2) is formed on all regions of the pattern for the lower electrode layer 22a and all regions not covered by the pattern of the insulating layer 44e outside the pattern for the light emitting material layer 30b do. Thus, the substance In_2-xSn_xO_3-y(0.05y0.2) absorbs even a trace amount of moisture existing in the vicinity of the light emitting layer 30b, thus keeping the light emitting material in a moisture-free state.</p><p>Further, in this embodiment, all regions of the pattern for the lower electrode layer 22a are covered by the pattern for the light emitting material layer 30b, but the pattern for the lower electrode layer 22a is the pattern for the light emitting material layer 30b. Even if it is not partially covered by the above, the same effect as described above can be achieved. Additionally, all regions of the pattern for the transparent electrode layer 21b are formed on the pattern for the light emitting material layer 30b, but the pattern for the transparent electrode layer 21b is partially formed on the light emitting material layer 30b. Even if not, the same effect as described above can be achieved.</p><p>As shown in Fig. 13c, the hygroscopic reinforcing layer 43e is made of a material "In_2-xSn_xO_3-y(0.05y0.2)" may be formed on the transparent electrode layer 21b. Here, the hygroscopicity reinforcing layer 43c functions to receive the moisture absorbed by the transparent electrode layer 21b, and additionally maintains the light emitting material in a moisture-free state.</p><p>Additionally, in order to prevent the lower electrode layer 22a or the luminescent material layer 30b from being completely affected by atmospheric moisture and/or oxygen, as in the case shown in FIGS. 1A to 4H, a hygroscopicity reinforcing layer ( 43c) or a protective layer (not shown) may be formed on the transparent electrode layer 21b.</p><p>Next, the structure of another light emitting body 10f will be described with reference to Figs. 14A to 14C. The light emitting body 10f is a modification of the light emitting body 10d shown in FIGS. 13A to 13C. 14A, 14B and 14C correspond to FIGS. 13A, 13B and 13C, respectively. 14A to 14C have an insulating layer 44f and a transparent electrode layer 21b such that an end portion 44fe of the pattern for the insulating layer 44f is disposed on the end portion of the pattern for the transparent electrode layer 21b. ) is different from the light emitting body 10d in the overlapping point. By providing a portion where the pattern for the insulating layer 44f and the pattern for the transparent electrode layer 21b overlap each other, between the end portion 44fe of the insulating layer 44f and the end portion 21be of the transparent electrode layer 21b Thus, it is possible to prevent a clearance caused by manufacturing errors, and to reduce the possibility of occurrence of corrosion in the light emitting layer 30b. However, due to the existence of the portion where the patterns for the light emitting layer 30b and the insulating layer 44f overlap each other, the flatness on the upper surface of the light emitting body 10f is reduced.</p><p>Needless to say, the structure of the layers described in FIGS. 1A to 4H can be applied to the structures of the light emitting bodies 10a to 10f described in FIGS. 9A to 14C .</p><p><u>4th embodiment</u></p><p>The structure of a group of light-emitting elements serving as light-emitting bodies of the present invention arranged in parallel in a planar manner on a substrate will be described with reference to Figs. 15A to 17B. 15A is a cross-sectional view of a group of light emitting elements 10g according to the fourth embodiment, and FIG. 15B is a plan view conceptually illustrating a group of light emitting elements 10g according to the fourth embodiment. Fig. 16A is a cross-sectional view of a group of other light emitting elements 10h according to the fourth embodiment, and Fig. 16B is a plan view conceptually illustrating a group of light emitting elements 10h according to the fourth embodiment. Fig. 17A is a cross-sectional view of a group of other light emitting elements 10i according to the fourth embodiment, and Fig. 17B is a plan view conceptually illustrating a group of light emitting elements 10i according to the fourth embodiment. The size of each layer shown in each of the drawings and the position of each layer of each light emitting body illustrated in each of the drawings provide only the positional relationship of the layers, and are provided for reference only. 15A to 17B, components made of the same material as those of FIGS. 1A to 4H or having the same function or structure are assigned the same reference numerals. In the case where the components of FIGS. 15A to 17B are made of the same function and the same material as those of FIGS. 1A to 4H, but have a different shape than that of FIGS. 1A to 4H, assign to each of the components of FIGS. 15A to 17B Subscript "g" or "i" is added. In addition, a second subscript "e" is additionally assigned to the above-mentioned reference numerals having a first subscript to represent the end portions of the respective layers in the plan views shown in Figs. 15B to 17B.</p><p>Additionally, as described above, a plurality of light emitting bodies are formed on the substrate. The substrate is a base on which a plurality of light emitting bodies and other films or elements are formed. As in the above-described embodiments, even in the case of an electrode having no layer structure, since in some cases it has overlapping portions forming a layer, such an electrode is expressed by adding the word "layer" to the electrode. do.</p><p>Each of the light-emitting bodies 10g to 10i shown in Figs. 15A to 17B, as in the case of the light-emitting bodies 10a to 10f shown in Figs. 9A to 14C, light is directed upward on the substrate 11. It is emitted, and the display is in the form of a film surface illuminant that can be seen from the top side to the bottom side of the layers stacked on the substrate 11 .</p><p>First, one group of light emitting devices will be described with reference to FIGS. 15A and 15B . 15A and 15B, in each of the light-emitting bodies 10g, a pattern for the lower electrode layer 22g is formed on the substrate 11 by a patterning method, and a pattern for the light-emitting material layer 30g In a manner that covers all regions of the pattern for this lower electrode layer 22g, a pattern for the light emitting material layer 30g is also formed on the lower electrode layer 22g by the patterning method. Further, a pattern for the transparent electrode layer 21g is formed on the pattern for the light emitting material layer 30g in such a way that the pattern for the transparent electrode layer 21g covers all regions of the pattern for the light emitting material layer 30g. The light-emitting bodies 10g of such a three-layer structure are independently disposed on the substrate 11 in vertical and horizontal directions, as shown in FIGS. 15A and 15B .</p><p>Another group of illuminators 10h is described with reference to FIGS. 16A and 16B . The group of other illuminants 10h shown in FIGS. 16A and 16B is a variant of the group of illuminators 10g shown in FIGS. 15A and 15B . 16A and 16B correspond to FIGS. 15A and 15B, respectively.</p><p>The group of illuminants shown in FIGS. 16A and 16B is such that, instead of the pattern of the transparent electrode layer 21g covering the top portion of the illuminant 10g of FIG. 15A , the pattern for the transparent electrode layer 21h is of the emitters 10h It differs from those of FIGS. 15A and 15B in that it covers all areas of the group. Accordingly, in this embodiment, there is no exposed portion on the substrate 11 on all regions of the group of light-emitting bodies 10h.</p><p>The light emitting body 10h is a light emitting material layer 30g, which is disposed in the vertical and horizontal directions on the substrate 11 in such a way that the pattern for the light emitting material layer 30g covers the pattern for the lower electrode layer 22g. The pattern for the lower electrode layer 22g is formed on the pattern for the lower electrode layer 22g. Therefore, in the light emitting body 10h, the lower electrode layer 22g, the light emitting material layer 30g, and The transparent electrode layer 21h is laminated to form a three-layer structure in the pattern for the lower electrode layer 22g. As described above, the plurality of patterns for the lower electrode layers 22g and the light emitting material layers 30g are covered by the pattern for one transparent electrode layer 21h.</p><p>In the embodiment shown in FIG. 16A , all of the illuminants 10h are covered by the pattern for one transparent electrode layer 21h, but the pattern for one transparent electrode layer 21h does not necessarily cover all the illuminants 10h. It doesn't have to be covered. What is only required is that two or more light emitting bodies are covered by one pattern for the transparent electrode layer 21h. As in the above embodiments, In_2-xSn_xO_3-y(0.05 ? y ? 0.2) is used as the material for the transparent electrode layer 21h, which contains, as a main component, a mixture of oxides of tin and indium.</p><p>Next, one group of different light emitting elements 10i will be described with reference to FIGS. 17A and 17B. The other group of illuminants 10i shown in Figs. 17A and 17B is a variant of the group of illuminants 10h shown in Figs. 16A and 16B. 17A and 17B correspond to FIGS. 16A and 16B, respectively.</p><p>The group of illuminants 10i shown in FIGS. 17A and 17B is a point that not only the transparent electrode layer 21h, which is one of the three layers, but also the luminescent material layer 30i, covers all regions of the group of the illuminants 10i. It is different from those of Figs. 16A and 16B. Accordingly, the layers disposed in the vertical and horizontal directions and independently disposed on the substrate 11 are only the lower electrode layer 22g, and the light emitting body 10i includes the lower electrode layer 22g, the light emitting material layer 30i, and the transparent electrode layer ( 21h). As described above, the plurality of patterns of the lower electrode layers 22g are covered by one pattern of the light emitting material layer 30i and one pattern of the transparent electrode layer 21h.</p><p>In the example shown in Fig. 17A, all the aligned light emitting bodies 10i are covered by one pattern of the transparent electrode layer 21h and one pattern of the light emitting material layer 30i, but one pattern of the transparent electrode layer 21h. One pattern of the pattern and luminescent material layer 30i does not necessarily cover all the aligned illuminants 10i. What is only required is that two or more light emitting bodies 10i are covered by one pattern of the transparent electrode layer 21h and one pattern of the light emitting material layer 30i. As in the above embodiments, In_2-xSn_xO_3-y(0.05 ? y ? 0.2) is used as the material for the transparent electrode layer 21h, which contains, as a main component, a mixture of oxides of tin and indium. </p><p>Needless to say, the structure of the layers described in Figs. 5A to 8H of the second embodiment can be applied to the structures of the light emitting bodies 10g to 10i described in Figs. 15A to 17B.</p><p><u>5th embodiment</u></p><p>The structure of the light emitting body of the fifth embodiment of the present invention different from the structure described in the third embodiment shown in Figs. 9A to 14C will be described with reference to Figs. 18A to 25C. 18A and 18C are cross-sectional views of the light emitting body according to the fifth embodiment, and FIG. 18B is a plan view of the light emitting body according to the fifth exemplary embodiment. 19A and 19C are cross-sectional views of another light emitting body according to the fifth embodiment, and FIG. 19B is a plan view of another light emitting body according to the fifth exemplary embodiment. 20A and 20C are cross-sectional views of another light emitting body according to the fifth embodiment, and FIG. 20B is a plan view of another light emitting body according to the fifth exemplary embodiment. 21A and 21C are cross-sectional views of another light emitting body according to the fifth embodiment, and FIG. 21B is a plan view of another light emitting body according to the fifth exemplary embodiment. 22A and 22C are cross-sectional views of another light emitting body according to the fifth embodiment, and FIG. 22B is a plan view of another light emitting body according to the fifth exemplary embodiment. 23A and 23C are cross-sectional views of another light emitting body according to the fifth embodiment, and FIG. 23B is a plan view of another light emitting body according to the fifth exemplary embodiment. 24A and 24C are cross-sectional views of another light emitting body according to the fifth embodiment, and FIG. 24B is a plan view of another light emitting body according to the fifth exemplary embodiment. 25A to 25C are cross-sectional views of another light-emitting body, and FIG. 25B is a plan view of another light-emitting body according to the fifth embodiment. The direction in which a mark is shown or light is emitted in the light emitting bodies shown in FIGS. 18A to 25C is the same as the direction in the light emitting bodies 10j shown in FIGS. 9C to 14C . The light emitting body of the fifth embodiment is of the substrate surface light emitting type in which light is emitted in the downward direction of the substrate. As the substrate, for example, a glass substrate on which an indication can be seen from the lower surface of the glass substrate toward the surface of the laminated layers is used.</p><p>The size of each layer shown in each of the drawings and each layer and its pattern illustrated in each of the drawings provide only the positional relationship of the layers, and are provided for reference only.</p><p>18A to 25C, components made of the same material as those of FIGS. 5A to 8H or having the same function or structure are assigned the same reference numerals. The components of FIGS. 18A-25C when the component of FIGS. 18A-25C is made of the same function and the same material as the component of FIGS. 5A-8H, but has a different shape than that of FIGS. 5A-8H The same reference sign assigned to each has the subscript "j" or "s" is added. In addition, in the plan views shown in FIGS. 18B, 19B, 20B, 21B, 22B, 23B, 24B and 25B, to the above-mentioned reference numerals with the first subscript to represent the end portions of each layer, A second subscript "e" is additionally assigned.</p><p>Additionally, as described above, a plurality of light emitting bodies 10j to 10s are formed on the substrate 11 . The substrate is a base on which a plurality of light emitting bodies 10j to 10s and other films or elements are formed. As in the above-described embodiments, even in the case of an electrode having no layer structure, since it has overlapping portions forming a layer in some cases, such an electrode is expressed by adding the word "layer" to the electrode .</p><p>First, the light emitting body 10j of the present invention will be described with reference to FIGS. 18A to 18C . As shown in FIG. 18A , a transparent electrode layer 21j is formed on the substrate 11 by a patterning method. A light emitting material layer 30j is formed on the transparent electrode layer 21j by a patterning method. The pattern for the light emitting material layer 30j is smaller in size than the pattern for the transparent electrode layer 21j. An upper electrode layer 23j is formed on the light emitting material layer 30j. The pattern for the upper electrode layer 23j is smaller in size than the pattern for the light emitting material layer 30j. As in the above examples, the material In_2-xSn_xO_3-y(0.05 ? y ? 0.2) is used as the material for the transparent electrode layer 21j, which contains a mixture of oxides of tin and indium as main components.</p><p>In this embodiment, a substance In which exhibits hygroscopicity due to its oxygen-deficient property_2-xSn_xO_3-y(0.05y0.2) is formed under all regions of the patterns for the light emitting material layer 30j and the upper electrode layer 23j. Thus, the substance In_2-xSn_xO_3-y(0.05y0.2) absorbs a trace amount of moisture present in the vicinity of the light emitting layer 30b, and thus keeps the light emitting material in a moisture-free state.</p><p>In this embodiment, all regions of the pattern for the light emitting material layer 30j are formed on the transparent electrode layer 21j, but the pattern for the light emitting material layer 30j is not partially formed on the transparent electrode layer 21j. Even in this case, the same effects as described above can be achieved. Additionally, in this embodiment, all regions of the pattern for the upper electrode layer 23j are formed on the pattern for the light emitting material layer 30j, but the pattern for the upper electrode layer 23j is formed on the light emitting material layer 30j. Even if it is not partially formed on the phase, the same effect as described above can be achieved.</p><p>As shown in FIG. 18C, the hygroscopic reinforcing layer 43j is made of a material "In._2-xSn_xO_3-y(0.05y0.2)" may be formed on the transparent electrode layer 21j. Here, the hygroscopicity reinforcing layer 43j receives moisture absorbed by the transparent electrode layer 21j, and functions to maintain the light emitting material in a moisture-free state.</p><p>Additionally, in order to completely keep the upper electrode layer 23j or the light emitting material layer 30j free from atmospheric moisture and/or oxygen, the case shown in Figs. 5c, 5d, 5g and 5h and Likewise, a protective layer (not shown) may be formed on all of the three-layer structure light-emitting bodies 10j.</p><p>Next, another light emitting body 10k of the present invention will be described with reference to Figs. 19A to 19C. The light emitting body 10k shown in Figs. 19A to 19C is a modification of that shown in Figs. 18A to 18C. 19A, 19B and 19C correspond to FIGS. 18A, 18B and 18C, respectively.</p><p>The light emitting body 10k of FIGS. 19A to 19C is shown in FIGS. 18A to 19C in that the pattern for the light emitting material layer 30k is formed in such a way that it covers all regions of the pattern for the transparent electrode layer 21k grown on the substrate. It is different from that shown in Fig. 18C. Accordingly, the pattern for the light emitting material layer 30k is larger in size than the pattern for the transparent electrode layer 21k.</p><p>An upper electrode layer 23j is formed on the pattern for the light emitting material layer 30k. The pattern for the upper electrode layer 23j is smaller in size than the pattern for the light emitting material layer 30k. As in the above examples, the material In_2-xSn_xO_3-y(0.05 ? y ? 0.2) is used as the material for the transparent electrode layer 21k, which contains, as a main component, a mixture of oxides of tin and indium.</p><p>In this embodiment, a substance In which exhibits hygroscopicity due to its oxygen-deficient property_2-xSn_xO_3-y(0.05y0.2) is formed under the light emitting element portion of the upper electrode layer 23k and the light emitting material layer 30k. Thus, the substance "In_2-xSn_xO_3-y(0.05y0.2)" absorbs a trace amount of moisture present in the vicinity of the light-emitting layer 30k, and thus keeps the light-emitting material in a moisture-free state.</p><p>In addition, in the above structure, unlike the case shown in FIGS. 18A and 18C , since the pattern for the light emitting material layer 30k can be large in size, it is easier to manufacture the pattern for the light emitting material layer 30k. It has an advantage that the selection range for manufacturing a pattern for the light emitting material layer 30k is wider. However, since there is a portion of the pattern for the light emitting material layer 30k that is not formed on the transparent electrode layer 21k, it is necessary to use a material for the light emitting material layer 30k having excellent moisture resistance.</p><p>In this embodiment, all regions of the pattern for the transparent electrode layer 21k are covered by the light-emitting material layer 30k, but the pattern for the transparent electrode layer 21k is not partially covered by the light-emitting material layer 30k. Even in this case, the same effect as described above can be achieved. Additionally, in this embodiment, all regions of the pattern for the upper electrode layer 23j are formed on the pattern for the light emitting material layer 30k, but the pattern for the upper electrode layer 23j is formed on the light emitting material layer 30k. Even in the case where it is not partially formed on the phase, the same effect as described above can be achieved.</p><p>As shown in Figure 19c, the material "In_2-xSn_xO_3-yA hygroscopicity reinforcing layer 43j may be formed between the transparent electrode layer 21k made of "(0.05y0.2)" and the substrate. Here, the hygroscopicity reinforcing layer 43j serves to receive the moisture absorbed by the transparent electrode layer 21k and protect the light emitting material from moisture.</p><p>In addition, a protective layer (not shown) may be formed over the entirety of the light emitting body 10k so that the upper electrode layer 23j or the light emitting material layer 30k is completely unaffected by moisture and/or oxygen in the atmosphere. .</p><p>Next, another light emitting body 10m of the present invention will be described with reference to Figs. 20A to 20C. The light emitting body 10m shown in FIGS. 20A to 20C is a modification of the light emitting body shown in FIGS. 19A to 19C . 20A, 20B, and 20C correspond to FIGS. 19A, 19B, and 19C, respectively.</p><p>The light emitting body 10m of FIGS. 20A to 20C is shown in FIGS. 19A to 19C in that it forms an upper electrode layer 23m over all regions of the light emitting material layer 30k covering the pattern for the transparent electrode layer 21k. It is different from the luminous body. Therefore, the pattern for the upper electrode layer 23m is larger than the pattern for the light emitting material layer 30k in size.</p><p>19A to 19C, as the material for the transparent electrode layer 21k, a material containing a mixture of oxides of tin and indium as the above-mentioned main components is used.</p><p>In this example, under the light emitting element portion in the upper electrode layer 23m and under the light emitting material layer 30k, a material "In showing hygroscopicity due to an oxygen-deficient characteristic"_2-xSn_xO_3-y(0.05y0.2)". Therefore, the substance "In_2-xSn_xO_3-y(0.05y0.2)" absorbs even a minute amount of moisture present in the vicinity of the light emitting layer 30k, making the light emitting material free from moisture. </p><p>Further, in this configuration, different from the case shown in Figs. 18A and 18C, since the patterns for the light emitting material layer 30k and the patterns for the upper electrode layer 23m can be made larger, the light emitting material layer 30k ) and manufacturing the upper electrode layer 23m are easier, and there is an advantage in that the range of choices for manufacturing the pattern for the light emitting material layer 30k is wider. However, since there are portions of the patterns for the light emitting material layer 30k and the patterns for the upper electrode layer 23m, it is necessary to use a material having excellent moisture resistance as the material of the light emitting material layer 30k.</p><p>In this example, all regions of the pattern for the transparent electrode layer 21k are covered with the light-emitting material layer 30k, but the above-mentioned pattern for the transparent electrode layer 21k is not partially covered with the light-emitting material layer 30k. The same effect as one can be achieved. Furthermore, in this example, all regions of the pattern for the light-emitting material layer 30k are covered with the pattern for the upper electrode layer 23m, but the pattern for the light-emitting material layer 30k is partially covered with the upper electrode layer 23m. Even if not, the same effect as mentioned above can be achieved.</p><p>As shown in FIG. 20C , a hygroscopic reinforcing layer 43j may be formed between the transparent electrode layer 21k and the substrate 11 . Here, the moisture absorption reinforcing layer 43j serves to receive moisture absorbed by the transparent electrode layer 21k and further remove moisture from the light emitting material.</p><p>In addition, a protective layer (not shown) may be formed over the entirety of the light emitting body 10m so that the upper electrode layer 23m or the light emitting material layer 30k is completely unaffected by moisture and/or oxygen in the atmosphere. . </p><p>Next, another light emitting body 10n of the present invention will be described with reference to Figs. 21A to 21C. </p><p>The light emitting body 10n shown in FIGS. 21A to 21C is a modification of the light emitting body shown in FIGS. 20A to 20C . 21A, 21B, and 21C correspond to FIGS. 20A, 20B, and 20C, respectively.</p><p>In the light emitting body 10n of FIGS. 20A to 20C, the pattern for the light emitting material layer 30n covers a wider range than the pattern for the transparent electrode layer 21k formed on the substrate 11, and the upper electrode layer 23n. It is different from the light emitting body shown in FIGS. 20A to 20C in that the pattern for , has a width that can cover the pattern for the transparent electrode layer 21k. Therefore, the pattern for the upper transparent electrode layer 23k is larger than the pattern for the light emitting material layer 30n in size.</p><p>19A to 19C, as a material for the transparent electrode layer 21k, a material containing a mixture of oxides of tin and indium as a main component is used.</p><p>In this example, a substance In which exhibits hygroscopicity due to its oxygen starvation properties_2-xSn_xO_3-y (0.05y0.2) is formed under the light emitting element portion in the light emitting material layer 30n and the upper electrode layer 23n. Therefore, the substance "In_2-xSn_xO_3-y (0.05y0.2)" absorbs even a trace amount of moisture existing near the light emitting layer 30n, and thus makes the light emitting material away from the moisture. </p><p>Further, in this configuration, unlike the case shown in Figs. 18A and 18C, the patterns for the light emitting material layer 30n and the upper electrode layer 23n can be made larger in size, so that the upper electrode layer 23n and the light emitting material can be made larger in size. There are advantages in that it becomes easier to manufacture patterns for the layer 30n, and the selection range for manufacturing a pattern for the light emitting material layer 30k becomes wider. However, since there are portions of the patterns for the upper electrode layer 23n and the light emitting material layer 30n that are not formed on the transparent electrode layer 21k, it is necessary to use a material for the light emitting material layer 30n having excellent moisture resistance. there is</p><p>As shown in Fig. 21c, the hygroscopic reinforcing layer 43j is made of a material "In_2-xSn_xO_3-y (0.05y0.2)" may be formed between the transparent electrode layer 21k and the substrate 11 . Here, the moisture absorption reinforcing layer 43j receives the moisture absorbed by the transparent electrode layer 21k, and acts to move the light emitting material away from the moisture.</p><p>In addition, in order to prevent the upper electrode layer 23n or the light emitting layer 30n from being affected by atmospheric moisture and/or oxygen, a protective layer (not shown) may be formed on the entire light emitting body 10n.</p><p>Next, another light emitting material 10p of the present invention will be described with reference to Figs. 22A and 22C.</p><p>The light emitting body 10p shown in Figs. 22A to 22C is a modification of that shown in Figs. 21A to 21C. 22A, 22B, and 22C correspond to FIGS. 21A, 21B and 21C, respectively.</p><p>22A to 22C, the pattern for the light-emitting material layer 30p is located within the range of the pattern for the transparent electrode layer 21k formed on the substrate, and is covered by the pattern for the light-emitting material layer 30p. It differs from that shown in FIGS. 21A to 21C in that portions of the pattern for the non-transparent electrode layer 21k are covered by the insulating material layer 44p. Therefore, the pattern for the light emitting material layer 30p is smaller in size than that for the transparent electrode layer 21k.</p><p>19A to 19C, as a material for the transparent electrode layer 21k, a material including a mixture of tin and indium oxide as a main component is used.</p><p>In this example, the material "In which exhibits hygroscopicity due to its oxygen starvation properties._2-xSn_xO_3-y (0.05y0.2)" is formed under the light emitting element portion in the light emitting material layer 30p and the upper electrode layer 23n. Therefore, the substance "In_2-xSn_xO_3-y (0.05y0.2)" absorbs even a trace amount of moisture existing near the light emitting layer 30p, and thus makes the light emitting material away from the moisture.</p><p>In the light emitting body 10p, portions surrounding the pattern for the transparent electrode layer 21k and the light emitting material layer 30p are buried in the insulating layer 44p, so that the upper surface of the light emitting body 10p is relatively flat. constructed in such a way that However, since a new process for filling the insulating layer 44p has to be added, the manufacturing cost thereof increases accordingly.</p><p>In this example, all regions of the pattern for the light emitting material layer 30p are formed on the transparent electrode layer 21k, but even if the pattern for the light emitting material layer 30p is not partially formed on the transparent electrode layer 21k, The same effects as described can be achieved. Further, in this example, all regions of the pattern for the light emitting material layer 30p are covered by the pattern for the upper electrode layer 23n, but the pattern for the light emitting material layer 30p is partially covered by the upper electrode layer 23n. Even if not covered with , the same effects as described above can be achieved.</p><p>As shown in Fig. 22c, the hygroscopic reinforcing layer 43j is made of a material "In_2-xSn_xO_3-y (0.05y0.2)" may be formed between the transparent electrode layer 21k and the substrate 11 . Here, the moisture absorption reinforcing layer 43j receives moisture absorbed by the transparent electrode layer 21k, and acts to move the light emitting material away from the moisture.</p><p>In addition, in order to make the upper electrode layer 23n or the light emitting layer 30p completely unaffected by atmospheric moisture and/or oxygen, a protective layer (not shown) may be formed on the entire light emitting body 10p.</p><p>Next, another light emitting body 10q of the present invention will be described with reference to Figs. 23A to 23C.</p><p>The light emitting body 10q shown in Figs. 23A to 23C is a modification of that shown in Figs. 22A to 22C. 23A, 23B and 23C correspond to FIGS. 22A, 22B and 22C, respectively.</p><p>The light emitting body 10q in FIGS. 23A to 23C is different from that shown in FIGS. 22A to 22C in that an end portion 44qe of the insulating layer 44q is superimposed on the pattern of the light emitting material layer 30p. different. Accordingly, by providing a portion where the pattern for the insulating layer 44q and the pattern for the light emitting material layer 30p overlap each other, leakage between the upper electrode layer 23q and the transparent electrode layer 21k caused by manufacturing errors It is possible to prevent leakage current from occurring. However, since there is a portion where the pattern for the insulating layer 44q and the pattern for the light emitting material layer 30p overlap with each other, the flatness on the upper surface of the light emitting body 10q is the case shown in Figs. 22A to 22C. decreases compared to</p><p>Next, another light emitting body 10r of the present invention will be described with reference to Figs. 24A to 24C.</p><p>The light emitting body 10r shown in Figs. 24A to 24C is a modification of that shown in Figs. 23A to 23C. 24A, 24B, and 24C correspond to FIGS. 23A, 23B, and 23C, respectively.</p><p>The light emitting body 10r of FIGS. 24A to 24C is different from that shown in FIGS. 23A to 23C in that portions of the light emitting material layer 30r exposed around the pattern of the upper electrode layer 23r are buried in the insulating layer 44r. . By configuring as above, the defect in moisture-resistance in the light emitting body 10n shown in FIGS. 21A to 21C can be compensated. However, a new process of embedding the insulating layer 44q must be added, thereby increasing the manufacturing cost thereof.</p><p>Moreover, it is possible to make the top surface of the stacked layers of the emitter 10r flatter compared to the emitter 10p shown in FIGS. 22A-22C .</p><p>Next, another light emitting body 10s of the present invention will be described with reference to Figs. 25A to 25C. </p><p>The light emitting body 10s shown in Figs. 25A to 25C is a modification of that shown in Figs. 24A to 24C. 25A, 25B, and 25C correspond to FIGS. 24A, 24B, and 24C, respectively.</p><p>The light emitting body 10s in FIGS. 25A to 25C is different from that shown in FIGS. 24A to 24C in that the end portion 44se of the insulating layer 44s is placed overlapping the end portion 23ne of the upper electrode layer 23n. . Accordingly, by providing a portion where the insulating layer 44se and the upper electrode layer 23n overlap each other, between the end 44se of the insulating layer 44s and the end 44se of the upper electrode layer 44se caused by a manufacturing error It is possible to prevent a gap from occurring, which can lower the possibility of corrosion in the light emitting material layer 30n. However, since there is a portion where the pattern for the insulating layer 44s and the light emitting material layer 30n overlaps with each other, the flatness on the upper surface of the light emitting body 10s is the light emitting body 10r shown in Figs. 24A to 24C. decreased compared to the case of</p><p>It goes without saying that the configurations of the layers described in Figs. 5A to 8H of the second embodiment can be applied to that of the light emitting bodies 10j to 10s described in Figs. 18A to 25B. </p><p><u>6th embodiment</u></p><p>The configuration of a group of light emitting elements 10u using the light emitting bodies of the present invention and placed in parallel in plan will be explained by referring to Figs. 26A to 28B. 26A is a cross-sectional view of a group of light-emitting elements, and FIG. 26B is a plan view conceptually illustrating a group of light-emitting elements according to a sixth embodiment of the present invention. Fig. 27A is a cross-sectional view of a group of light-emitting elements, and Fig. 26B is a plan view conceptually showing a group of light-emitting elements according to the sixth embodiment. Fig. 28A is a cross-sectional view of another group of light emitting elements, and Fig. 28B is a plan view conceptually showing another group of light emitting elements according to the sixth embodiment. Therefore, the respective size of the layer of emitters and the respective arrangement of the emitters shown in the respective figures merely provide positional relationships in the emitters and are provided for reference only.</p><p>Furthermore, in Figs. 26A to 28B, like reference numerals are assigned to components having the same functions or configurations or made from the same material as those in Figs. 5A to 8H. 26A to 28B are made of the same material and the same function as those in FIGS. 5A to 8H, but have different shapes from those in FIGS. 5A to 8H, the subscripts "u" to "w" are added to the same numbers assigned to respective components in Figs. 26A to 28C. Further, a second subscript "e" is additionally assigned to the above number with a first subscript representing the end of each layer in the plan views shown in Figs. 26B, 27B, and 28B.</p><p>Moreover, a plurality of light emitting bodies are formed on the substrate. The substrate is a base on which a plurality of light emitting bodies and other films or elements are formed. As in the above embodiments, even in the case of an electrode having no insulating structure, since in some cases it has overlapping portions forming a layer, such an electrode is expressed by adding the word "layer" to the electrode. do.</p><p>As the light emitting bodies 10j to 10s shown in Figs. 18A to 25C, each of the light emitting bodies 10u to 10w constituting the group of the light emitting bodies is the light emitted downward of the substrate 11, and the display is formed of the laminated layers. It is a substrate surface light emission form that can be seen from the lower side of the substrate 11 towards the surface. </p><p>In each of the light emitting bodies 10u shown in FIGS. 26A to 26B , a transparent electrode layer 21u is formed on the substrate 11 by the patterning method, and the light emitting layer 30u is formed on the transparent electrode layer 21u by the patterning method. is formed in On the pattern for the light-emitting material layer 30u, the pattern for the upper electrode layer 23u is formed in such a way that the upper electrode layer 23 covers all regions of the pattern for the light-emitting layer 30u. As described above, a plurality of such illuminators 10v are arranged in vertical and horizontal directions.</p><p>27A and 27B in that the group of light-emitting bodies 10v is formed on the substrate 11 in common for all the light-emitting bodies 10v in which the transparent electrode layer 21v is arranged in vertical and horizontal directions. , different from the illuminant groups shown in FIGS. 26A and 26B. Therefore, the pattern of the transparent electrode layer 21v exists under the patterns of the plurality of light emitting material layers 30u. A pattern of each of the upper electrode layers 23u is formed on the pattern of each of the light emitting material layers 30u.</p><p>In Fig. 27A, although the pattern of the transparent electrode layer 21 is formed in common for all the light emitting bodies 10v, only two or more light emitting bodies 10v can be formed. Therefore, each of the light emitting bodies 10v is composed of the transparent electrode layer 21v, which in common serves to support the other two or more light emitting bodies, the light emitting material layer 30u and the upper electrode layer 23u.</p><p>28A and 28B, the pattern for the transparent electrode layer 21v is formed by a patterning method on a substrate in common for all the emitters 10w, and the emitter layer 30v It differs from the group of illuminants shown in FIGS. 27A and 27B in that the pattern for is formed by the patterning method on the transparent electrode layer 21v for all the illuminants 10w. That is, the pattern of the transparent electrode layer 21v supports the pattern of the light emitting material layer 30v that commonly supports all the light emitting bodies 10w.</p><p>In Fig. 28A, although the pattern of the transparent electrode layer 21v is formed in common for all the light-emitting bodies 10w, and the pattern for the transparent electrode layer 30v is also formed in common for all the light-emitting bodies 10w, they are only It may be formed for two or more light emitting bodies 10w. Therefore, each of the light-emitting bodies 10w commonly supports the transparent electrode layer 21v serving to support the two or more light-emitting bodies 10w, and also supporting the two or more light-emitting bodies 10w and the upper electrode layer 23u in common. constituting the light emitting material layer 30v that plays a role.</p><p>As a material for the transparent electrode layers 21u and 21v, the material "In_2-xSn_xO_3-y(0.05y0.2)" is used, which contains a mixture of oxides of tin and indium as main components. </p><p>Although the configurations of the group of light emitting elements have been described with reference to Figs. 26A to 28, it goes without saying that the light emitting bodies described in the fifth embodiment can be used in the example shown in Figs. </p><p><u>7th embodiment</u></p><p>An example of a light emitting body 10x constituting a group of light emitting elements will be described with reference to FIGS. 29A and 28B. 29A is a cross-sectional view of the light emitting body 10x constituting a group of light emitting devices, and FIG. 29B is a plan view conceptually illustrating the light emitting body 10x according to the seventh embodiment of the present invention. In the light emitting body 10x, as shown in Fig. 29A, the entire group of light emitting elements is sealed in a hermetric manner, and the inside thereof is filled with inert gases.</p><p>The illuminator 10x is configured such that an encapsulation member 60 is positioned around the group of illuminators 10v provided in FIGS. 27A and 27B , and an adhesive 61 is placed between the encapsulation member 60 and the substrate 11 . . The enclosed space is filled with an inert gas 62 . That is, by one encapsulation member 60 , the plurality of light-emitting bodies 10v are sealed to generate one light-emitting body 10x .</p><p>In this description, only one example of the encapsulated structure is shown using the illuminator 10v, but the same encapsulated method as described herein can be applied to other illuminators or the assembly of such illuminators described in the above embodiment.</p><p><u>eighth embodiment</u></p><p>The configurations of the light emitting element unit 50 including elements necessary for light emission of the light emitting body will be described with reference to FIGS. 30A and 30B . 30A is a cross-sectional view of the light emitting element unit 50 according to an eighth embodiment of the present invention, and FIG. 30B is a plan view of the light emitting element unit 50 . Each arrangement and each size of the light emitting element portion 50 shown in FIGS. 30A and 30B is only for providing a positional relationship in the light emitting element portion 50, and is provided for reference only. </p><p>30A and 30B , the light emitting element unit 50 includes a light emitting element functioning as a light emitting body 110 , a current supply element 111 , and a switching element 112 . The light emitting element 110 is connected to the current supply element 111 and the current supply element 111 is connected to the switching element 112 .</p><p>As shown in FIG. 30B , a plurality of light emitting device units 50 are disposed.</p><p>Any of the above-described light emitting bodies 10a to 10w may be the light emitting device 110 shown in FIGS. 30A and 30B . </p><p><u>9th embodiment</u></p><p>The states of the wirings for the plurality of light emitting element portions 50 described in the eighth embodiment, which are arranged in the vertical and horizontal directions, will be described with reference to Figs. 31 is a plan view showing the positional relationship between the light emitting element unit 50 and wirings according to the ninth embodiment of the present invention. 32 is a plan view illustrating a positional relationship between another light emitting element unit 50 and wirings according to the ninth embodiment. 33 is a plan view illustrating a positional relationship between another light emitting element unit 50 and wirings according to the ninth embodiment. 31 to 33 , the first switching wiring 51 , the second switching wiring 52 , the ground wiring 53 , the current supply wiring 54 and the common wiring 55 are the light emitting element part ( 50) is provided. As described with reference to Fig. 30A, the light emitting element portion 50 is connected to a current supply element which is connected to a switching element. The wirings are provided in vertical and horizontal directions. The light emitting element portion 50 is placed between the wirings provided in the vertical direction and the wirings provided in the horizontal direction. </p><p>In FIG. 31 , a plurality of light emitting device units 50 are disposed in vertical and horizontal directions. The pair of first switching wirings 51 and the ground wiring extend in the horizontal direction, and the second switching wiring 52 extends in the vertical direction. Each of the light emitting device parts 50 is surrounded by a first switching wire 51 , a second switching wire 52 , and a ground wire 53 . </p><p>In this example, the ground wiring 220 extends in the horizontal direction, but may extend in the vertical direction.</p><p>In FIG. 32 , the plurality of light emitting element units 50 are arranged in vertical and horizontal directions. The pair of second switching wirings 52 and the ground wiring 53 extend in the horizontal direction, and the pair of first switching wirings 51 and the current supply wiring 54 extend in the vertical direction. Each of the light emitting element portions 50 is surrounded by a current supply wiring 54 , a ground wiring 53 , and a second switching wiring 52 .</p><p>In this example, the ground wiring 53 extends in the horizontal direction, but may extend in the vertical direction. Moreover, the current supply wiring 54 extends in the vertical direction, but may also extend in the horizontal direction.</p><p>In Fig. 33, a pair of ground wiring 53 and a current supply wiring 54 and a common wiring 55, which can be generally used as the second switching wiring 52, extend in the horizontal direction, while the first switching wiring 51 extends in the vertical direction. </p><p>In this example, the current supply wiring 54 extends in the horizontal direction, but may extend in the vertical direction.</p><p><u>tenth embodiment</u></p><p>The circuit and wiring of the light emitting element part of the present invention including the light emitting body 70, the switching transistor 71 functioning as a switching element, the current supply transistor 72 functioning as a current supply element and the current holding capacitor 73 Their connection will be described with reference to FIGS. 34 to 39 . Fig. 34 is a circuit diagram showing the connection of the light emitting element portion and wirings to the light emitting element portion according to the tenth embodiment of the present invention. 34 is a circuit diagram of the light emitting device shown in FIG. 30A. In Fig. 34, like reference numerals are assigned to wirings having the same functions in the ninth embodiment.</p><p>34 , the first switching wiring 51 extends in the horizontal direction and the second switching wiring 52 extends in the vertical direction. The gate 71G of the switching transistor 71 is connected to the first switching wiring 51 , and the source 71S of the switching transistor 71 is connected to the second switching wiring 52 . The drain 71D of the switching transistor 71 is connected to the gate 72G of the current supply transistor 72 , and is connected to one terminal of the voltage holding capacitor 73 . The other terminal of the voltage holding capacitor 73 is connected to the ground wiring 53 . The source of the current supply transistor 72 is connected to the current supply wiring 54 , and its drain 72D is connected to the anode of the light emitting body 70 . The cathode of the light emitting body 70 is connected to the ground wiring 53 .</p><p>In the state of connection of the wirings described above, when a voltage is applied to the first switching wiring 51, the voltage is supplied to the gate 72G of the first switching transistor 71, which is the source 71S and the drain 71D. ) to conduct. In this state, when a voltage is applied to the second switching wiring 52 , the voltage is supplied to the gate 72G of the current supply transistor 72 , which causes electric charges to be stored in the voltage holding capacitor 73 . As a result, even if there is no voltage applied to the first switching wiring 51 or the second switching wiring 52, the voltage is applied to the gate of the current supply transistor 72 until the charges stored in the voltage holding capacitor 73 are deleted. (72G) is continuously supplied. Therefore, by application of a voltage to the gate 72G of the current supply transistor 72, the source 72S and the drain 72D are conducted, and the ground wiring 53 from the current supply wiring 54 through the light emitting body 70. ), and as a result, light is emitted from the light emitting body 70 .</p><p>On the other hand, if a driving current is not supplied to either the first switching wiring 51 or the second switching wiring 52, no voltage is applied to the gate 72G of the current supply transistor 72, so that the light emitting body 70 is No current flows through it and no light is emitted from it.</p><p>Fig. 35 is also a circuit diagram showing the connection of wirings to another light emitting element portion 50 and another light emitting element portion 50 according to the tenth embodiment. As shown in FIG. 35, other wirings are added to the light emitting element portions 50 respectively located in the adjacent manner shown in FIG. That is, the pair of the first switching wiring 51 and the ground wiring 53 extends in the horizontal direction, and the pair of the second switching wiring 52 and the current supply wiring 54 extends in the vertical direction.</p><p>Fig. 36 is also a circuit diagram showing the connection of wirings to the light emitting element portion 50 and another light emitting element portion 50 according to the tenth embodiment. As shown in Fig. 36, instead of the first switching wiring 51 and the ground wiring 53 used in Fig. 35, one common wiring 55 is used.</p><p>Fig. 37 is also a circuit diagram showing the connection of wirings to the light emitting element portion 50 and another light emitting element portion 50 according to the tenth embodiment. As shown in FIG. 37 , the light emitting body 70 connected to the drain 72D of the current supply transistor 72 in FIG. 34 is connected to the source 72S of the current supply transistor 72 . That is, the source 72S of the current supply transistor 72 is connected to the light emitting body 70 , and the drain 72D is connected to the ground wiring 53 . The anode of the illuminant 70 is connected to a current supply source 191 .</p><p>By configuring as above, when the driving voltage is simultaneously applied to the first switching wiring 51 and the second switching wiring 52 as described above, a stable potential is applied to the gate 72G of the current supply transistor 72 . can Therefore, the current flows from the current supply wiring 54 to the ground wiring 53 through the light emitting body 70 and the source and drain of the current supply transistor 72 . As a result, light is emitted from the light emitting body 70 .</p><p>On the other hand, if the driving voltage is not supplied to either the first switching wiring 51 or the second switching wiring 52 , no voltage is applied to the gate 72G of the current supply transistor 72 , so that the current is not applied to the light emitting body 70 . ) and, as a result, no light is emitted from it.</p><p>38 is a circuit diagram showing the connection of wirings to the light emitting element portion 50 and another light emitting element portion 50 according to the tenth embodiment. As shown in FIG. 38, other wirings are added to the light emitting element portions 50 respectively positioned in the adjacent manner shown in FIG. That is, the pair of the first switching wiring 51 and the ground wiring 53 extends in the horizontal direction, and the pair of the second switching wiring 52 and the current supply wiring 54 extends in the vertical direction.</p><p>Fig. 39 is also a circuit diagram showing another light emitting element unit 50 and wirings to the another light emitting element unit 50 according to the tenth embodiment. As shown in Fig. 39, instead of the first switching wiring 51 and the ground wiring 53 used in Fig. 38, one common wiring 55 is used.</p><p><u>eleventh embodiment</u></p><p>40 to 42, the arrangement of the light emitting elements 81 to 83 that act to produce color and the relationship between the light emitting elements and the substrate are described. Fig. 40 is a cross-sectional view of an arrangement of light emitting elements 81 to 83 that act to produce color according to the eleventh embodiment. A light emitting element 81 for a first color, a light emitting element 82 for a second color and a light emitting element 83 for a third color are alternately arranged on the substrate 11 . In general, the light emitting device 81 for the first color is made of a light emitting device that generates blue, the light emitting device 82 for the second color is made of a light emitting device that generates green, and a light emitting device for the third color is used. The light emitting element 83 is made of a light emitting element that emits red color.</p><p>Fig. 41 is also a cross-sectional view of an arrangement of light emitting elements 81a, 82a and 83a that act to produce color according to the eleventh embodiment. As shown in FIG. 41 , each of the light emitting elements 81a , 82a and 83a for the first, second and third colors alternately arranged are partially buried in the substrate 11a. In general, the light emitting device 81a for the first color is made of a light emitting device for generating blue, the light emitting device 82a for the second color is made up of a light emitting device for generating green, and for the third color The light emitting element 83a is made of a light emitting element that emits red color.</p><p>Fig. 42 is also a cross-sectional view of an arrangement of light emitting elements that act to produce a color according to the eleventh embodiment. As shown in FIG. 42 , a rib 84 is formed between the light emitting elements 81a , 82a and 83a for the first, second and third colors that are alternately arranged. That is, the rib 84 is formed between the light emitting elements 81a and 82a and between the light emitting elements 82a and 83a. Other configurations shown in FIG. 42 are the same as in FIG. 40 . </p><p>Next, the layer structure of each light emitting element is described with reference to Figs. </p><p>Fig. 43 is a cross-sectional view showing an arrangement of light-emitting elements that generate color and a layer structure thereof. As shown in FIG. 43 , the light emitting elements 81b , 82b and 83b are divided by ribs 84 . The hole injection layer 33b has a three-layer structure including the surfaces of the ribs 84 . It covers all surfaces of the optical elements 81b, 82b and 83b. A transparent electrode layer 21b covers all surfaces of the hole layer 33b. Therefore, in the light emitting device 81b, the lower electrode layer 22b is formed on the substrate 11, the first color electron transport layer 351 is formed on the lower electrode layer 22, and the first color light emitting layer 361 is formed on the first color electron transport layer 351 , the hole injection layer 33 is formed on the first color electron transport layer 351 , and the transparent electrode layer 21b is formed on the hole configured to be formed on the injection layers. That is, the light emitting element 81b is composed of five layers. The other light emitting devices 82b and 83b have the same layer structure as the light emitting device 81b. Generally, the first color is provided by blue light, the second color is provided by green light, and the third color is provided by red light.</p><p>44 is a cross-sectional view showing an arrangement of another light emitting device for generating color and layer structure. 44 , first, a plurality of patterns of the lower electrode layer 22c are formed on the substrate 11 . Each electron transport layer 351-353 corresponding to each of the three colors is formed to cover each of the patterns of the lower electrode layer 22c. Next, each of the light-emitting layers 361-363 is formed on the respective electron transporting layers 351-353. Each of the hole injection layers 331-333 is formed on the light emitting layer 361-363. The transparent electrode layer 21c covers all surfaces of each hole injection layer 331-333. The lower electrode layer 22c, the electron transport layer 351-353, the light emitting layer 361-363, and the hole injection layer 331-333 are separately separated from each other, and the separated layers are adjacent to each other. Therefore, for example, the light emitting device 81c has a lower electrode layer 22c, an electron transport layer 351, a light emitting layer 361, a hole injection layer 331, and a transparent electrode layer 21c that are sequentially stacked on the substrate 11. It consists of 5 layers containing The other light emitting elements 82c and 83c have the same layer structure as the light emitting element 81b.</p><p>45 is a cross-sectional view illustrating an arrangement of another light emitting device for generating color and layer structure. The light emitting device shown in FIG. 45 is different from the light emitting device of FIG. 44 in a part of the hole injection layer 33d. That is, first, the lower electrode layer 22c is formed on the substrate 11 . Each of the electron transport layers corresponding to each of the three colors is formed on the lower electrode layer 22c to cover each of the electron transport layers 351-353. Next, each of the light emitting layers 361-363 is formed on the electron transporting layers 351-353. The hole injection layer 33d is formed on the light emitting layers 361-363 so as to cover all surfaces of the light emitting layers 361-363. A transparent electrode layer 21 is formed on the hole injection layer 33d so as to cover all surfaces of the hole injection layers 33d. The lower electrode layer 22c, the electron transporting layers 351-353, and the light emitting layers 361-363 are individually separated from each other, and the separated layers are adjacent to each other.</p><p>Therefore, for example, in the light emitting device 81d, the lower electrode layer 22c, the first color electron transport layer 351, the first color light emitting layer 361, and the hole injection layer 33d are sequentially stacked on the substrate 11. and five layers including a transparent electrode layer 21c. The other light emitting elements 82d and 83d have the same layer structures as the light emitting element 81c.</p><p><u>12th embodiment</u></p><p>The positional relationship between the light emitting body 410 and the substrate 411a will be described with reference to FIGS. 46 and 47 . The light emitting body 410 shown in FIGS. 46 and 47 is sequentially deposited on the substrate 411a. It consists of five layers including a lower electrode layer 422 , an electron transport layer 435 , a light emitting layer 436 , a hole injection layer 433 , and a transparent electrode layer 421 to be layered.</p><p>46 is a cross-sectional view showing the positional relationship between the light emitting body 410 and the substrate 411a according to the twelfth embodiment. As shown in FIG. 46 , the plurality of light emitting bodies 410 are spaced apart, and the lower electrode layer 422 is attached to the flat substrate 411a.</p><p>Fig. 47 is also a cross-sectional view showing the positional relationship between another light emitting body 410 and the substrate 411b according to the twelfth embodiment. As shown in FIG. 47, the substrate 411b has a concave portion in which the light emitting body 410 is disposed and the lower electrode layer 422 is attached on the flat substrate 411a.</p><p><u>thirteenth embodiment</u></p><p>The configurations of the light emitting body will be described with reference to FIGS. 48 and 49 . 48 and 49 show the connection between the light emitting body 10 and the current supply element 111 shown in FIGS. 30A and 30B and their positional relationship. Each size of the layer and each pattern shown in FIGS. 48 and 49 only provides the positional relationships of the layers, which are provided for reference only. 48 and 49, elements having the same functions or configurations or made of the same materials as those described above are assigned the same reference numerals. If the elements of Figs. 48 and 49 have the same material and function as those described above but have a different shape than those described above, the same reference numerals assigned to each of the elements of Figs. 48 and 49 have a subscript "a" is added Fig. 48 is a cross-sectional view showing the configurations of a light emitting body (light emitting element) according to the thirteenth embodiment.</p><p>In FIG. 48 , first, a barrier layer 548 is formed on a substrate 511 . Thin Film Transistors (TFTs) are formed on the barrier layer 548 . Accordingly, a gate portion 527 , a source portion 528 , and a drain portion 529 of the TFT are formed on the barrier layer 548 . A gate insulating film 545 is formed on all surfaces of the gate portion 527 , the source portion 528 and the drain portion 529 , and all surfaces of the barrier layer 548 . However, holes are made in a portion of the gate insulating film 545 positioned on the source portion 528 and the drain portion 529 of the TFT.</p><p>In addition, a gate electrode 524 is formed in a portion positioned on the gate insulating film 545 over the gate portion 527 of the TFT. That is, the gate portion 527 is insulated from the gate electrode 524 by the gate insulating film 545 . A first interlayer dielectric 546 is formed on the surface pieces of both the gate insulating film 545 and the gate electrode 524 formed on the gate insulating film 545 . However, as in the case of the gate insulating film 545, a hole is made in a part of the first interlayer dielectric 546 located on the source portion 528 and drain portion 529 of the TFT. In one hole, a source electrode 525 is formed so as to be in contact with the source portion 528 of the TFT. In the other hole, a drain electrode 526 is formed so as to be in contact with the drain portion 529 of the TFT.</p><p>Further, except for the drain electrode 526 , a secondary interlayer dielectric 547 is formed on the first interlayer dielectric 546 . Although not shown, the switching element is connected to the source electrode 525 . A pattern of the lower electrode layer 522 is formed on the second interlayer dielectric 547 so as to contact the drain electrode 526 exposed upward. The light emitting material layer 530 emits light. A material layer 530 covers the lower electrode layer 522 , and then a transparent electrode layer 521 is formed on the lower electrode layer 522 in such a way that it is formed on the light emitting material layer 530 .</p><p>The light emitting material layer 530 is an electron transport layer, a light emitting layer, three layers including a hole injection layer, or two layers including a light emitting layer and a hole injection layer functioning as an electron transport layer, or an electron transport layer and It consists of a single layer of a light emitting layer functioning as a hole injection layer. In addition, the light emitting material layer 530 and the transparent electrode layer 521 are formed in the form of individual patterns. A pattern large enough to cover multiple components of the illuminant can be used.</p><p>Fig. 49 is also a sectional view showing the configuration of another light emitting body (light emitting element) according to the thirteenth embodiment. Unlike the case shown in FIG. 48 , the lower electrode layer 522a does not contact the drain electrode 526 , and the transparent electrode layer 521a contacts the drain electrode 526 . Therefore, the light emitting material layer 530a is interposed between the lower electrode layer 522a and the transparent electrode layer 521a.</p><p><u>14th embodiment</u></p><p>Planar structures of portions surrounding the light emitting element including the light emitting element portion and wirings will be described with reference to FIG. 50 . Fig. 50 is a plan view showing the structural relationship between the light emitting element portion and its wiring according to the fourth embodiment. It is assumed that the connection state shown in FIG. 37 is applied to the circuit shown in FIG. 50 .</p><p>In FIG. 50 , the first switching wiring 51 is a gate line connected to the gate portion 71G of the switching transistor 71 . The second switching wiring 52 is a small part of the switching transistor 71 . It is a data line connected to the switch 71S. The drain portion 71D of the switching transistor 71 is connected to both the gate portion 72G of the current supply transistor 72 and one terminal of the voltage holding capacitor 73 connected to the ground wiring 53 . Another terminal of the voltage holding capacitor 73 is connected to the ground wiring 53 . The source portion 72S of the current supply transistor 72 is connected to the lower electrode layer 22 . Although not shown, there is a light emitting layer 30 on all surfaces of these gates, terminals, wirings, etc. shown in the drawings, and a transparent electrode layer 21 is also formed on the light emitting layer 30 . The transparent electrode layer 21 is connected to a current supply wiring 54 (not shown). The drain portion 72D of the current supply transistor 72 is connected to the ground wiring 53 .</p><p><u>15th embodiment</u></p><p>Each component of the light emitting device will be described with reference to Table 1.</p><p><tables id="1"><img file="KR100437673B1_D0001.tif" /></tables></p><p>As described above, as the substrate material, glass, resin, or quartz is used. As the material for the transparent electrode layer, ITO (Indium Tin Oxide) or a mixture of tin and indium oxide is used. As the material for the metal electrode layer, MgAg, Al, or LiAl is used. As the material for the electron transport layer, an aluminolinol (Alq) complex, PBD, TAZ, BND, OXD (Oxadiazole derivative), OXD-7, or PPV (Polyphenylene vinylene) is used. As a material for a light emitting layer, a material obtained by adding a red fluorescent pigment to an aluminolinol complex, an aluminolinol complex containing one type of fluorescent material, a berynium benzolquinolinol complex containing one type of fluorescent material, an oxazole complex of zinc containing one type of fluorescent substance, or a precursor of a conjugated polymer organic compound containing one type of fluorescent substance. Precursors include, for example, polyvinylene phenylene or derivatives thereof. Fluorescent pigments include rhodamine B, distilbiphenyl, tetraphenyl butadiene, quinacridone and their derivatives. </p><p>As the material for the hole injection layer, triphenyldiamine derivative (TPD), a porphyrin compound of copper (II) phthalocyanine, or ?-NPD is used. As the material for the anode buffer layer, CuPc, polyaniline, or polythiophene is used. As the material for the protective layer, an oxide of Al, a nitride of Al, or an oxide of Si or a mixture thereof is used. An oxide of Ba is used as the material for the hygroscopic reinforcing layer. As a material for a switching element and a material for a current supply element, a transistor is used. Further, as the material for the switching wiring, the current supply wiring, the common wiring and the ground wiring, Al, Cu, Ta, Ru, or WSi is used.</p><p>Next, each component constituting the switching transistor and the current supply transistor will be described with reference to Table 2.</p><p><tables id="2"><table cols="2" id="1"><row><entry he="67" wi="10842" ce="2" cb="1" re="1" rb="1" al="l"> components of a transistor</entry><row><entry he="64" wi="4705" ce="1" cb="1" re="2" rb="2" al="l"> Each electrode of source, drain and gate</entry><entry he="64" wi="6137" ce="2" cb="2" re="2" rb="2" al="l"> Al, Cu, Ta, Ru, Wsi</entry><row><entry he="133" wi="4705" ce="1" cb="1" re="3" rb="3" al="l"> Gate insulating film, interlayer dielectric, and barrier layer</entry><entry he="133" wi="6137" ce="2" cb="2" re="3" rb="3" al="l">Oxide of Al, nitride of Al, oxide of Si, nitride of Si, or mixtures thereof</entry></row></row></row></table></tables></p><p>As shown in Table 2, Al, Cu, Ta, Ru, or WSi is used as a material for each of the source, drain, and gate electrodes. As a material for each of the gate insulating film, the first interlayer dielectric, the second interlayer dielectric and the barrier layers, an oxide of Al, a nitride of Al, an oxide of Si, a nitride of Si, or a mixture thereof is used.</p><p>Next, with reference to Table 3, components for encapsulation of the light emitting body will be described.</p><p><tables id="3"><img file="KR100437673B1_D0002.tif" /></tables></p><p>As the material for the adhesive, a UV curing resin is used. As the material for the encapsulation component, a metal, glass, or resin is used. As a hermetic gas, N₂, H₂, or an inert gas such as Ar is used.</p><p><u>16th embodiment</u></p><p>A typical method of manufacturing the light emitting element portion will be described using the structure of the light emitting body as shown in FIG. 48 with reference to FIGS. 51A and 51B.</p><p>First, as shown in FIG. 51A , a substrate 511 is prepared. Typically, the substrate 511 is made of alkali-free glass. Next, as shown in FIG. 51B, a barrier layer 548 is formed on the substrate 511 by a CVD (chemical vapor deposition) method or a sputtering method. As shown in Fig. 51C, for example, a silicon film 500 is formed by a sputtering method, a CVD method, or an LP (low pressure) CVD method at a temperature of about 500 DEG C to form polycrystals by laser irradiation. </p><p>Then, as shown in FIG. 52A, a gate insulating film 545 is formed on the upper surface of the silicon film 500 and the exposed surface of the barrier layer 548 by sputtering or CVD. Typically, "SiO₂"The film is grown by remote plasma CVD.</p><p>Next, as shown in FIG. 52C , a gate insulating film 545 is formed in the center of the upper surface of the silicon film 500 which is also located on the upper surface. A gate electrode film, which is a normal "WSi" film formed by sputtering or vapor deposition, is first grown, and then photoresist is applied by spin coating, followed by patterning of the photoresist by exposure and development using a photomask. A pattern for the gate electrode 524 is formed by removing the gate electrode film having no photoresist pattern by a milling method and dissolving the photoresist in a solvent. </p><p>Next, as shown in FIG. 52C, after coating a portion other than the silicon film 500, ion doping is performed using boron or phosphorus to form the source portion 528 and A drain portion 529 is formed. In order to activate the source portion 528 and the drain portion 529, heat treatment is performed on them, for example, at a temperature of about 550°C.</p><p>Next, as shown in FIG. 53A, "SiO₂"A first interlayer dielectric 546 usually made of a film is formed on the gate electrode 524 by a sputtering method or a CVD method, and a first interlayer dielectric 546 formed on the source portion 528 and the drain portion 529. ) and the gate insulating film 545 are removed to form a hole. At this time, the same method as that used in the patterning process of the gate electrode 524 is used.</p><p>Next, as shown in Fig. 53B, the source electrode 525 and the drain electrode 526 both made of Al are formed by the patterning method. Also, at this time, the same method as used in the patterning process of the gate electrode 524 is used.</p><p>Next, as shown in Fig. 54a, "SiO₂"A second interlayer dielectric 547, which is usually made of a film, is formed by the patterning method. At this time, a part of the upper surface of the drain electrode 526 is exposed. Also, at this time, the same method as used in the patterning process of the gate electrode 524 is used.</p><p>Next, as shown in FIG. 54B , a pattern for the lower electrode layer 522 made of metal is formed to cover the upper portion of the second interlayer dielectric 547 and the exposed upper portion of the drain electrode 526 . Also, at this time, the same method as used in the patterning process of the gate electrode 524 is used.</p><p>Next, as shown in FIG. 55A , a pattern for the light emitting material layer 530 is formed to cover the pattern for the lower electrode layer 522 . In order to form a pattern for the light emitting material layer 530, a deposition method using a metal mask or an inkjet header is used.</p><p>Next, as shown in FIG. 55B , a pattern for the transparent electrode layer 521 is formed to cover the upper surface of the pattern for the light emitting material layer 530 . The transparent electrode layer 521 is formed by a sputtering method, a CVD method, or a spin coating method, and the same method used in the patterning process of the gate electrode 524 is used.</p><p><u>Yes</u></p><p>Results obtained by setting the conditions described below for a prototype of a light emitting display device having a light emitting element having the structures described below will be described. The luminous body used in the prototype has the same layer structure as that shown in Fig. 8D. That is, the transparent electrode layer 21, the anode buffer layer 41, the hole injection layer 33, the light emitting layer 36 acting as the electron transport layer 35, the upper electrode layer 23 and the protective layer 42 are all substrates ( 11) are stacked on top of each other in order. The structure of the light emitting body shown in Figs. 18A to 18C is used here. Therefore, in this illuminant, light is emitted below the substrate, and the display is seen toward the lower side of the substrate 11 made of the glass substrate above the top of the stacked layers. The light emitting body is configured in this way, and as shown in FIG. 27 , the transparent electrode layer 21v is formed to support a plurality of light emitting bodies on the substrate 11 in common, and the plurality of light emitting bodies are sealed as shown in FIG. 29 . is enclosed with Furthermore, the light emitting body is formed so as to have the configuration shown in Fig. 50 to which a switching element and a current supply element are added and wiring shown in Fig. 35 is connected, as shown in Fig. 30 . </p><p>One unit element has a size of 30 µm × 100 µm, and the size of the display unit using this unit element is 40 mm × 40 mm.</p><p>In the prototype, non-alkaline glass is used as a material for a substrate, AlLi is used as a metal electrode layer, α-NPD is used as a material for a hole injection layer, and Alq is used as a material for a light emitting layer serving as an electron transport layer. Polyaniline is used as the material for the anode buffer layer. A substance that is a mixture of oxides of tin and indium "In_2-xSn_xO_3-y" is used as a material for the transparent electrode layer. Aluminum (Al) is used as a material for the first switching wiring, the second switching wiring, and the ground wiring.</p><p>A mixture of tin and indium oxide is Ar + O₂ Substance as a target in the atmosphere of"In_2-xSn_xIt is created by performing reactive sputtering using ". In_2-xSn_xO_3-yThe value of "y" in the act is O₂ It is changed by changing the ratio of to Ar. The value of "y" is the "In" prepared separately by the Ratherford back scattering (RBS) method._2-xxSn_xxO_3-y" obtained by analysis of the membrane. The structural formula of the membrane "In_2-xxSn_xxO_3-y" The value of "xx" included in is a symbolic value, this value is not analyzed, and the value "xx" and the substance used as a target "In_2-xSn_xThe value contained in ""x" indicates the possibility that there is a difference between</p><p>In a prototype using the light emitting body shown in Fig. 18C, barium (Ba) oxide is used as a material for the hygroscopic reinforcing layer.</p><p>As the switching element and the current supply element, prototypes are used. Aluminum is used for the source and drain electrodes of transistors. Tungsten silicide is used for the gate electrode of the transistor. Silicon oxide is used as a material for the gate insulating film, the first interlayer insulator, the second interlayer insulator and the barrier layer. After the light emitting element is placed in a nitrogen atmosphere, it is sealed by a metal cap.</p><p>After applying a voltage of 5V to the anode made of the transparent electrode of the light emitting device and applying a voltage of 5V to all the first switching wirings (gate lines) and all the second switching wirings (data lines), the light emitted from the light emitting device is The time required for the light to decrease by half was measured at room temperature using a photometer.</p><p>Table 4 shows the time (time) required until the amount of light emitted from the illuminant is reduced by half, and the material "In as a target._2-xSn_xIf " is used, the "In_2-xxSn_xxO_3-y" In the act, the value "y" indicates the relationship between Data are provided when the illuminant shown in Fig. 18A is used (A) and when the illuminant shown in Fig. 18C is used (B).</p><p> Table 4</p><p><table cols="9" id="2"><row><entry he="67" wi="10677" ce="9" cb="1" re="1" rb="1" al="l"> Data on the time required to halve the amount of light</entry><row><entry he="128" wi="1187" ce="1" cb="1" re="3" rb="2" al="l"></entry><entry he="64" wi="8304" ce="8" cb="2" re="2" rb="2" al="l"> (A)</entry><entry he="64" wi="1187" ce="9" cb="9" re="2" rb="2" al="l"> (C)</entry><row><entry he="64" wi="1187" ce="2" cb="2" re="3" rb="3" al="l"> y=0.01</entry><entry he="64" wi="1187" ce="3" cb="3" re="3" rb="3" al="l"> y=0.03</entry><entry he="64" wi="1187" ce="4" cb="4" re="3" rb="3" al="l"> y=0.06</entry><entry he="64" wi="1187" ce="5" cb="5" re="3" rb="3" al="l">y=0.1</entry><entry he="64" wi="1187" ce="6" cb="6" re="3" rb="3" al="l">y=0.15</entry><entry he="64" wi="1187" ce="7" cb="7" re="3" rb="3" al="l">y=0.2</entry><entry he="64" wi="1187" ce="8" cb="8" re="3" rb="3" al="l">y=0.3</entry><entry he="64" wi="1187" ce="9" cb="9" re="3" rb="3" al="l">y=0.06</entry><row><entry he="64" wi="1187" ce="1" cb="1" re="4" rb="4" al="l"> x =0.05</entry><entry he="64" wi="1187" ce="2" cb="2" re="4" rb="4" al="l"> 49 </entry><entry he="64" wi="1187" ce="3" cb="3" re="4" rb="4" al="l"> 48 </entry><entry he="64" wi="1187" ce="4" cb="4" re="4" rb="4" al="l">340 </entry><entry he="64" wi="1187" ce="5" cb="5" re="4" rb="4" al="l">280 </entry><entry he="64" wi="1187" ce="6" cb="6" re="4" rb="4" al="l">320 </entry><entry he="64" wi="1187" ce="7" cb="7" re="4" rb="4" al="l">220 </entry><entry he="64" wi="1187" ce="8" cb="8" re="4" rb="4" al="l">21 </entry><entry he="64" wi="1187" ce="9" cb="9" re="4" rb="4" al="l">570 </entry><row><entry he="64" wi="1187" ce="1" cb="1" re="5" rb="5" al="l"> x = 0.1</entry><entry he="64" wi="1187" ce="2" cb="2" re="5" rb="5" al="l"> 52 </entry><entry he="64" wi="1187" ce="3" cb="3" re="5" rb="5" al="l"> 90 </entry><entry he="64" wi="1187" ce="4" cb="4" re="5" rb="5" al="l">350 </entry><entry he="64" wi="1187" ce="5" cb="5" re="5" rb="5" al="l">360 </entry><entry he="64" wi="1187" ce="6" cb="6" re="5" rb="5" al="l">320 </entry><entry he="64" wi="1187" ce="7" cb="7" re="5" rb="5" al="l">240 </entry><entry he="64" wi="1187" ce="8" cb="8" re="5" rb="5" al="l">18 </entry><entry he="64" wi="1187" ce="9" cb="9" re="5" rb="5" al="l">580 </entry><row><entry he="67" wi="1187" ce="1" cb="1" re="6" rb="6" al="l"> x = 0.2</entry><entry he="67" wi="1187" ce="2" cb="2" re="6" rb="6" al="l"> 47 </entry><entry he="67" wi="1187" ce="3" cb="3" re="6" rb="6" al="l"> 45 </entry><entry he="67" wi="1187" ce="4" cb="4" re="6" rb="6" al="l">360 </entry><entry he="67" wi="1187" ce="5" cb="5" re="6" rb="6" al="l">330 </entry><entry he="67" wi="1187" ce="6" cb="6" re="6" rb="6" al="l">340 </entry><entry he="67" wi="1187" ce="7" cb="7" re="6" rb="6" al="l">250 </entry><entry he="67" wi="1187" ce="8" cb="8" re="6" rb="6" al="l">17 </entry><entry he="67" wi="1187" ce="9" cb="9" re="6" rb="6" al="l">460 </entry></row></row></row></row></row></row></table></p><p>As shown in Fig. 4, the time required to reduce the amount of light emitted from the illuminator by half is equal to "In the material used as the target._2-xSn_xThe value "x" in " is "0.05, 0.1 and 0.2" If one of the values "y" is "0.03" If it is less than 100 hours, it is less than 100 hours. If the value "y" is in the range 0.06 to 0.2, then the time is at least 220 hours. If the value "y" is 0.3, the time decreases rapidly to 21 hours or less.</p><p>This means that a suitable value of "y" that allows the luminescence time to last sufficiently is in the range of 0.06 to 0.2. Therefore, the value "y" is set in the range of 0.06 to 0.2.</p><p>"In_2-xxSn_xxO_3-y" Since the film also exhibits oxygen deprivation characteristics to a certain extent, it has excellent hygroscopicity and can absorb moisture existing around the luminous body, and as a result, the luminescent lifetime of the luminous body is improved.</p><p>Moreover, the time required to reduce the amount of light by half in the luminous body having the structure shown in Fig. 18C and generated using the value "y" of 0.06 is the same as before, "y" "In generated using the value (y=0.06)_2-xxSn_xxO_3-y" 1.5 times longer than the time required for a phosphor containing a film. So, "In_2-xxSn_xxO_3-y"The film absorbs moisture present around the illuminant and absorbs moisture into a hygroscopic reinforcing layer that acts to further reduce the moisture content around the illuminant, so that the luminous lifetime of the illuminant is improved.</p><p>The present invention is not limited to the above-described embodiments, and other changes and modifications may be made without departing from the spirit and scope of the present invention.</p>

<p>The present invention relates to a light emitting body, a light emitting device, and a light emitting display device using the same, and more particularly, to a light emitting body and a light emitting device capable of securing a special light emission duration, and a light emitting display device using the light emitting body and the light emitting device.</p>