Photoconductive member

[Detailed Description of the Invention]

[Industrial Application] The present invention relates to the optical electric conduction member which has susceptibility in electromagnetic waves like light (it is a light in a broad sense here, and a purple outdoor daylight line, visible light, an infrared light line, X-rays, a gamma ray, etc. are shown). [Description of the Prior Art] As the photoconducting material which constitutes the photoconductive layer in a solid imaging device, the image formation member for electro-photography in the image formation field, a manuscript reader, etc., It has the absorption-spectrum characteristic matched with the spectral characteristics of the electromagnetic waves with which signal to noise ratio [photoelectric current [Ip/dark current (Id)] is high, and irradiates by high sensitivity, An optical response is quick and the characteristics, like an afterimage can be easily processed in predetermined time are required in a pollution-free thing and also a solid imaging device from a human body at the time of having desired dark resistance and use. It is a point nonpolluting [ whose / at the time of the above-mentioned use ] is important in the case of the image formation member for electro-photography especially incorporated in the electrophotography device used as an office machine in an office. The photoconducting material which it is based on such a point and attracts attention these days has amorphous silicone (a table describes it as A-Si henceforth), for example, it is as an image formation member for electro-photography in the German country public presentation No. 2746967 gazette and a 2855718 gazette, In JP,55-39404,A, the application to a photoelectric conversion reading device is described. [The problem which should be solved] The optical electric conduction member which has the photoconductive layer which comprised conventional A-Si with Therefore, In the point of operating environmental capabilities, such as electric [ dark resistance, optical sensitivity, an optical response, etc. ], optical, the optical electric conduction characteristic, and moisture resistance, and also the point of temporal stability, furthermore -- seasoning a practical solid imaging device and reading device including the application which consists and can set Difference improved broadly, and the image formation member for electro-photography also with productivity and mass production nature -- A mate -- what cannot be used effectively is the actual condition. For example, when it applies to the image formation member for electro-photography, and the case where rest potential remains at the time of the use is observed frequently and it continues using the optical electric conduction member of such a kind for a long time repeatedly, There were not few inconvenient points, like accumulation of fatigue by repetition use comes to emit what is called a ghost phenomenon that a Occurrence intermediary and an afterimage produce. Although A-Si as a material which constitutes the photoconductive layer of the image formation member for electro-photography furthermore has many advantages compared with OPC(s) (organic light electric conduction member), such as conventional Se, CdS, ZnO or PVCz, and TNF, according to many for example, this artificer's experiments, Even if it performs electrification processing for electrostatic image formation to the above-mentioned photoconductive layer of the image formation member for electro-photography which has a photoconductive layer of the monolayer composition which comprises A-Si to which the characteristic for using it as a conventional object for solar cells was given, dark attenuation (dark decay) is remarkably quick, It has become clear that Difference which the above-mentioned tendency is remarkable in that the A mate application of the usual electrophotographic method is hard to be carried out and humid atmosphere, and may be solved [ hold / electrification Loads / to developing time / depending on the case / at all ] exists. Therefore, while characteristic improvement of the A-Si material itself is measured, when designing an optical electric conduction member, it needs to be devised so that electric, optical, and the thing of a request which was described above where the optical electric conduction characteristic was acquired and image quality was stabilized by high sensitivity may be obtained. [An outline and the object] It accomplished in view of above-mentioned many points, the post of A-Si is taken, and the present invention is an image formation member for electro-photography, and a solid imaging device, The result of having continued research examination wholeheartedly in the gross from a viewpoint of the adaptability and its application as an optical electric conduction member used for a reading device etc., Amorphous material which uses a silicon atom as the mother's body and contains either of the hydrogen atom (H) and halogen atom (X) at least (amorphous material), What is called hydrogenation amorphous silicone, halogenation amorphous silicone, Or it is after containing halogen hydrogenation amorphous silicone [ "A-Si (H) as a generic notation of this etc. X) " -- the optical electric conduction member specified and produced so that the layer composition of the amorphous layer which comprises] to be used and shows optical conductivity might be mentioned below can not only be used enough practical Even if compared with the conventional optical electric conduction member, it is based on the point which found out having exceeded in almost all points, and having the characteristic which was remarkably excellent in optical sensitivity and image quality stabilization as an optical electric conduction member especially for electro-photography. It sets it as the main purpose electric [ the present invention ], optical, and for the optical electric conduction characteristic to be always stable, and to provide the optical electric conduction member which receives and twists restriction by the environment, and hardly causes a degradation phenomenon even if it is a total environment type, it excels in light-proof fatigue remarkably and it faces repetition use and by which rest potential is completely or hardly observed. The another object of the present invention is for optical sensitivity to provide the quick optical electric conduction member of an optical response highly in a full-visible light range. When other objects of the present invention are made to apply as an image formation member for electro-photography, It is providing the optical electric conduction member which has the electrophotographic properties which the grade to which the usual electrophotographic method may be applied very effectively has electric charge maintenance ability of enough in the case of the electrification processing for electrostatic image formation, and the fall of the characteristic was hardly observed also in humid atmosphere, and were excellent. The object of further others of the present invention has high concentration, half-tone comes out vividly and the high-resolution thing acquired for a high quality picture by always being stabilized is providing the optical electric conduction member for electro-photography made easily. [The means which should solve a problem] The optical electric conduction member of the present invention contains at least the base material for optical electric conduction members, and one of a hydrogen atom (H) and halogen atom (X), It comprises amorphous material [A-Si (H, X)] which uses a silicon atom as the mother's body, has an amorphous layer which shows optical conductivity, and is the amorphous layer, at least -- the part -- the surface of the above-mentioned base material -- abbreviated Every -- it being substantially uniform in a parallel field, and being uneven in the direction of layer thickness, and the distribution concentration of the direction of layer thickness having a field which changes continuously, and having a layer field which contains a carbon atom in the state where it was mostly distributed in the direction of the surface side opposite to the above-mentioned base material It is characterized by the content of the carbon atom being 0.005~30atom%, and the maximum of the distribution concentration of the above-mentioned layer thickness direction being 0.03~90atom%. [Function] The optical electric conduction member designed as took layer composition which was described above can solve all the above-mentioned problems, and shows extremely outstanding electric, optical, optical electric conduction characteristic, and operating environmental capability. Especially, when it is made to apply as an image formation member for electro-photography, it excels in the electric charge maintenance ability in the case of electrification processing, and there is no influence of the rest potential to image formation, the electrical property is stable also in humid atmosphere, and it is high sensitivity, It has the high signal to noise ratio, and excels in light-proof [ Then ] fatigue and repetition usability remarkably, and concentration is high, and half-tone can come out vividly and it can always obtain a high-resolution quality visible image stably. [The example of an embodiment] hereinafter, a drawing -- therefore, it explains in detail about the optical electric conduction member of the present invention. Drawing 1 is a typical lineblock diagram shown typically, in order to explain the typical example of composition of the optical electric conduction member of the present invention. Optical electric conduction member 100 shown in Drawing 1 is on base material 101 as an object for optical electric conduction members, It is provided in the state where barrier layer 102 provided if needed and the barrier layer 102 were contacted directly, and comprises amorphous layer 103 which shows optical conductivity, and the amorphous layer 103 is, distribution of a carbon atom [ in / it has a layer field which contains a carbon atom in the part at least, and / this layer field ] -- the surface of the above-mentioned base material 101 -- abbreviated Every -- substantially uniform in a parallel field It is uneven in the thickness direction of a layer, and many carbon atoms to the direction of the surface side where the above-mentioned base material 101 is opposite contained to Then and the above-mentioned layer field are distributed over it, Content Ct of a carbon atom is 0.005~30atom%, and maximum Cmax of the distribution concentration of the direction of layer thickness consists very near the surface where the above-mentioned base material 101 is opposite, or the surface, and Cmax is made into 0.03~90 atom %. As base material 101, Then is [ in conductivity ] also good at electrical insulation properties. As a conductive base material, alloys, such as metal, such as NiCr, stainless steel, aluminum, Cr, Mo, Au, Nb, Ta, V, Ti, Pt, and Pd, or this, are mentioned, for example. As an electrical-insulation-properties base material, the film of synthetic resins, such as polyester, polyethylene, polycarbonate, a cell rose, acetate, polypropylene, polyvinyl chloride, a polyvinylidene chloride, polystyrene, and polyamide, or a sheet, glass, ceramics, paper, etc. are usually used. As for electrical-insulation-properties base materials, such as this, it is suitably desirable to carry out electric conduction processing of the surface of one of these at least, and to provide with other layers the surface side by which electric conduction processing was carried out. For example, if it is glass, they are nickel, Cr, aluminum, Cr, Mo, Au, Ir, Nb, Ta, V, Ti, Pt, Pd, and In to the surface.₂O₃SnO₂ITO (In)₂O₃+SnO₂etc. -- from -- if conductivity is given or it is synthetic resin films, such as a polyester film, by providing the thin film which changes The thin film of metal, such as NiCr, aluminum, Ag, Pb, Zn, nickel, Au, Cr, Mo, Ir, Nb, Ta, V, Ti, and Pt, is provided in the surface by vacuum deposition, electron beam vapor deposition, sputtering, etc., or lamination processing of the surface is carried out with the above-mentioned metal, and conductivity is given to the surface. Although it can be considered as arbitrary shape, such as cylindrical, the shape of a belt, and tabular, and the shape is determined by request as shape of base material 101, For example, if optical electric conduction member 100 of Drawing 1 is used as an image formation member for electro-photography, in a continuation high-speed copy, it is desirable the shape of an endless belt or to suppose that it is cylindrical. It is suitably determined so that the optical electric conduction member as a request may be formed, but when flexibility is required as an optical electric conduction member, thickness of base material 101 will be made as thin as possible if the function as a base material is within the limits demonstrated enough. With Therefore, it may usually be 10 micrometers or more from a point of mechanical strength on manufacture of a base material, and handling in such a case. Barrier layer 102 prevents effectively the inflow of the free career from the base material 101 side to the amorphous layer 103 side, and arises in amorphous layer 103 by irradiation of electromagnetic waves at the time of electromagnetic irradiation, It has the function to allow the base material 101 side easily the passage from the amorphous layer 103 side of the Foto career which carries out Okay. movement to the base material 101 side. Although barrier layer 102 has the above functions, if the same function as the above barrier layers 102 is exhibited enough, in the interface formed between base material 101 and amorphous layer 103, it does not need to provide barrier layer 102 by force in the present invention. accepting at least one sort and necessity for the atom which barrier layer 102 uses silicon as the mother's body, and is chosen from a nitrogen atom (N) and an oxygen atom (O) -- at least [ of hydrogen atom (H) /and halogen atom (X) ] -- the amorphous material containing any 1 side -- < -- naming this etc. generically -- A-[Six (N, O)_1-x]_y(H, X) _1-yIt comprises > (however, 0< x<1, 0< y<1) to write or an organic compound of electrical insulation properties. In the present invention, F, Cl, Br, and I are preferred as halogen atom (X) contained in the above-mentioned barrier layer 102, and F and its Cl are especially desirable. As a concrete thing effectively used in the present invention as an amorphous material which constitutes the above-mentioned barrier layer 102, it is A-Si as an amorphous material of a nitrogen system, for example._hN_1-hA - (Si)_iN_1-i)_jH_1-jA - (Si)_kN_1-k)lX_1-lA - (Si)_nN_1-n)_o(H+X)_1-oIt is A-Si as an amorphous material of an oxygen system._pO_1-pA - (Si)_pO_1-p)_qH₁_-qA - (Si)_rO_1-r)_sX_1-sA - (Si)_tO_1-t)_u(H+X)_1-uIn etc, and also the above-mentioned amorphous material, the amorphous material which contains two sorts of atoms, N and O, as a composition atom can be mentioned (however, 0<h, i, j, k, l, m, n, o, p, q, r, s, t, u< 1). The optimal thing is suitably chosen by the ease etc. of continuous creation with amorphous layer 103 accumulated on the characteristic required of barrier layer 102 to which amorphous materials, such as this, depend on the optimization design of layer composition, and the barrier layer 102. If it carries out from a characteristic side especially, it is more preferred to choose the amorphous material of a nitrogen system. As a layer forming method in the case of constituting barrier layer 102 from an above-mentioned amorphous material, it accomplishes by glow discharge method, the sputtering method, the ion implantation method, the ion plating method, the electron beam method, etc. For forming barrier layer 102 with a glow discharge method, The material gas for the above-mentioned amorphous material formation is mixed with dilution gas by the mixture ratio of the specified quantity if needed, It may introduce into the deposition room for vacuum deposition in which base material 101 is installed, the gas made to introduce may be formed into gas plasma by making glow discharge occur, and the above-mentioned amorphous material may be made to deposit on the above-mentioned base material 101. SiH to which becoming material gas for Si generation used in order to form barrier layer 102 which comprises amorphous material of a nitrogen system in the present invention uses Si and H as a composition atom₄Si₂H₆Si₃H₈Si₄H₁₀Hydrogenated silicon matter gas, such as Silang (Silane) of etc, is mentioned. Or it uses N as a composition atom, the starting material effectively used as what can grow into the material gas for nitrogen atom introduction used in order to form barrier layer 102 which comprises amorphous material of a nitrogen system in the present invention is nitrogen (N) for example, it uses N and H as a composition atom.₂Ammonia (NH)₃Hydrazine (H)₂NNH₂Hydrogen azide (NH)₃Horse mackerel-ized ammonium (NH)₄N₃etc. -- nitrogen compounds, such as the shape of gas, or the nitrogen and nitriding thing which can be gasified, a horse mackerel ghost, can be mentioned. From the point that introduction of a halogen atom can also be performed in addition to introduction of a nitrogen atom to in addition, 3 fluoridation nitrogen (F)₃N), 4 fluoridation nitrogen (F)₄N₂etc. -- a halogenation nitrogen compound can be mentioned. As the material gas for [ in the material gas for the layer formation for constituting barrier layer 102 from amorphous material of a nitrogen system containing a halogen atom ] halogen atom introduction, For example, a halogen simple substance, hydrogen halide, an interhalogen compound, halogenation Silicon matter, halogen substitution Hydrogenated silicon matter, Hydrogenated silicon matter, etc. can be mentioned. Specifically as a halogen simple substance, they are BrF, ClF, and ClF as FH, HI, HCl, HBr, and an interhalogen compound as the halogen gas of fluoride, chlorine, bromine, and iodine, and hydrogen halide.₃ClF₅BrF₅BrF₃IF₇IF₅As ICl, IBr, and halogenation Silicon matter, it is SiF.₄Si₂F₆SiCl₄SiCl₃Br, SiCl₂Br₂SiClBr₃SiCl₃I, SiBr₄As halogen substitution Hydrogenated silicon matter, it is SiH.₂F₂SiH₂Cl₂SiHCl₃SiH₃Cl, SiH₃Br, SiH₂Br₂SiHBr₃As Hydrogenated silicon matter, it is SiH.₄Si₂H₆Si₃H₈Si₄H₁₀Every, such as Silang (Silane) of etc, can be mentioned. a halogen atom and a hydrogen atom contain base material for barrier layer formation, such as this, in the barrier layer formed a silicon atom, a nitrogen atom, and if needed by a predetermined composition ratio -- as -- it is a request in the case of barrier layer formation -- therefore, it is chosen and used. the request out of the starting material for barrier layer formation described above as a starting material used as the material gas for barrier layer 102 formation in the case of carrying out layer formation to constituting barrier layer 102 from amorphous material of an oxygen system with a glow discharge method -- therefore, the starting material for oxygen atom introduction is added to the selected thing. A thing general [ in what gasified the substance or the substance which can be gasified of the shape of gas which uses an oxygen atom as a composition atom at least as such a starting material for oxygen atom introduction ] may be used. For example, when the material gas which uses Si as a composition atom is used, Or [ the material gas which uses Si as a composition atom, the material gas which uses O as a composition atom, and / mixing and using it if needed by the mixture ratio of a request of H or the material gas which reaches and uses X as a composition atom ], Or the material gas which is mixed by the mixture ratio of again this a request of the material gas which uses Si as a composition atom, and the material gas which uses O and H as a composition atom, or uses Si as a composition atom, and the material gas which uses three, Si, O, and H, as a composition atom can be mixed and used. The material gas which uses O as a composition atom may be independently mixed and used for the material gas which uses Si and H as a composition atom. Specifically, it is oxygen (O), for example.₂Ozone (O)₃Nitrogen dioxide (NO)₂12 nitric oxide (N)₂O), a nitrogen sesquioxide (N)₂O₃42 nitric oxide (N)₂O₄52 nitric oxide (N)₂O₅Trioxide nitrogen (NO)₃Disiloxane H which uses Si, and O and H as a composition atom₃SiOSiH₃Trisiloxane H₃SiOSiH₂OSiH₃Low-grade Shiroki Sun of etc, etc. can be mentioned. As described above, when forming barrier layer 102 with a glow discharge method, barrier layer 102 which comprised a request component which has the request characteristic can be formed by using it, choosing many things from the inside of the substance which described above the starting material for barrier layer formation. Specifically, it is Si (CH) as a good thing, for example in the combination of the starting material in the case of forming barrier layer 102 with a glow discharge method.₃)₄SiCl₂(CH₃)₂Independent gas or SiH of etc₄-N₂O system, SiH₄-O₂(-Ar) A system, SiH₄-NO₂A system, SiH₄-O₂-N₂A system, SiCl₄-NO-H₂A system, SiH₄-NH₃A system, SiCl₄-NH₄A system, SiH₄-N₂A system, SiH₄-NH₃- Mixed gas, such as NO system, can be mentioned. In order to form barrier layer 102 which comprises amorphous material of a nitrogen system by the sputtering method, it is Si and Si of a single crystal or many crystals.₃N₄The wafer Is mixed(ed) and contained may be targeted and it may carry out by carrying out sputtering of this etc. in various gas atmospheres. (For example, the material gas for introducing a hydrogen atom or/and a halogen atom a nitrogen atom and if needed, if Si wafer is used as a target, for example, H)₂N₂Or NH₃It may dilute with dilution gas if needed, and may introduce all over the deposition room for sputtering, the gas plasma of gas, such as this, may be formed, and sputtering of the above-mentioned Si wafer may be carried out. They are Si and Si independently.₃N₄What's -- Si and Si as a separate target₃N₄By using the target of one sheet Mixing(ed) and formed, it accomplishes by carrying out sputtering in the dilution gas atmosphere as gas for sputtering, or the gas atmosphere containing at least H atoms and/or X atom. The material gas for N atom introduction in the starting material for barrier layer formation shown in the material gas for N atom introduction and the example of the glow discharge mentioned previously as what can change may be used as effective gas also in the case of sputtering. In order to form barrier layer 102 which comprises amorphous material of an oxygen system by the sputtering method, they are Si wafer of a single crystal or many crystals, or SiO.₂A wafer, or Si and SiO₂The wafer or SiO Is mixed(ed) and contained₂A wafer may be targeted and it may carry out by carrying out sputtering of this etc. in various gas atmospheres. For example, if Si wafer is used as a target, the material gas for introducing a hydrogen atom or/and a halogen atom an oxygen atom and if needed will be diluted with dilution gas if needed, It may introduce into the deposition air for sputtering, the gas plasma of gas, such as this, may be formed, and sputtering of the above-mentioned Si wafer may be carried out. They are Si and SiO independently.₂What's -- Si and SiO as another target₂By using the target of one sheet which Mixing(ed), it accomplishes by carrying out sputtering in the atmosphere of the dilution gas as gas for sputtering, or the gas atmosphere which contains at least H atoms or/and X atom as a component. The material gas for the oxygen atom introduction in the material gas shown in the example of the glow discharge mentioned previously as material gas for oxygen atom introduction may be used as effective gas also in the case of sputtering. In the present invention, it can mention as what has what is called - rare gas, for example, helium, Ne, suitable Ar, etc. as dilution gas used when forming barrier layer 102 by the glow discharge method or the sputtering method. Barrier layer 102 in the present invention is carefully formed so that the characteristic demanded may be given as a request. That is, the substance which uses H or/and X as a composition atom at least one and if needed in Si, N, and O takes the form of from a crystal until amorphous structurally according to the creation condition, In electric physical properties, since the character of a before [ from Light electric conduction character / non-light electric conduction character ] is shown respectively, selection of the creation condition constitutes strictly the character of a before [ from conductivity / semi-conductivity and insulation ] so that the amorphous material of non-light conductivity may be formed in the present invention. As for the amorphous material which constitutes barrier layer 102 of the present invention, the function of barrier layer 102 prevents pouring of the free career from the base material 101 side to the amorphous layer 103 side, And since it allows easily the Foto career which occurred in amorphous layer 103 moving, and passing to the base material 101 side, it is formed as what shows an electrical-insulation-properties action. When the Foto career which occurred in amorphous layer 103 passes through the inside of barrier layer 102, barrier layer 102 is formed as what has a value of the mobility (mobility) over the career which passes to such an extent that the passage accomplishes smoothly. As an important element in layer creation conditions for barrier layer 102 which comprises the above-mentioned amorphous material which has the above characteristics to be formed, the base material temperature at the time of layer creation can be mentioned. That is, when forming in the surface of base material 101 barrier layer 102 which comprises the above-mentioned amorphous material, it is the base material temperature under layer formation, The base material temperature at the time of layer creation is strictly controlled so that the above-mentioned amorphous material that has the target characteristic may be created in Then and the present invention as a request by the important factor which influences the structure and the characteristic of a layer which are formed. Although it combines with the method of forming barrier layer 102, the optimal range is suitably chosen as a base material temperature at the time of forming barrier layer 102 for the object in the present invention to be achieved effectively and formation of barrier layer 102 is performed, In a case usual to the case of the system containing a hydrogen atom or a halogen atom, in the case of 100degreeC~300degreeC and the system which is set to 150 degrees C~250 degreeC, and does not contain a hydrogen atom or a halogen atom suitably, it is usually desirable 20~200degreeC and to be suitably referred to as 20~150 degreeC. It can form continuously to the 3rd layer formed on amorphous layer 103 in formation of barrier layer 102 amorphous layer 103 and also if needed from barrier layer 102 within the same system. Although adoption of a glow discharge method or the sputtering method is advantageous because of the delicate control of an atomic composition ratio and the control of layer thickness which constitute each class being comparatively easy for other methods etc., When forming barrier layer 102 by the layer forming methods, such as this, the electric discharge power in the case of layer formation and gas pressure can mention like the above-mentioned base material temperature as an important factor which influences the characteristic of barrier layer 102 created. As electric discharge power conditions for barrier layer 102 which has the characteristic for the object in the present invention to be achieved effectively to be effectively created with sufficient productivity, 1~300W is usually 2~150W suitably. The gas pressure of the deposition interior of a room is usually 3x10.^-3~5Torr -- suitable -- 8x10^-3Being considered as about ~0.5Torr is desirable. The quantity of the nitrogen atom, the oxygen atom, hydrogen atom, and halogen atom which are contained in barrier layer 102 in the optical electric conduction member of the present invention is an important factor in which the barrier layer from which the characteristic of the request which achieves the object of the present invention is acquired like the creation conditions of barrier layer 102 is formed. When it constitutes barrier layer 102 from amorphous material of a nitrogen system, it is A-SihN first._1-hthe content of a nitrogen atom receives a silicon atom at a of case -- usually -- 43~60atom% -- suitable -- the display of 43~50atom% and h -- usually -- 0.4~0.57 -- it is suitably referred to as 0.5~0.57. A-(Si_iN_1-i)_jH_1-jWhen it comes out and constitutes, it is as content of a nitrogen atom, usually, 25~55atom% -- suitable -- as the content of 35~55atom% and a hydrogen atom usually, 2~35atom% -- if it is suitably considered as 5~30 atom % and displays by i and j -- as i -- usually -- 0.43~0.6 -- suitable -- as 0.43~0.5 and j -- usually -- 0.65~0.98 -- being suitably referred to as 0.7~0.95 -- A- (Si)_kN_1-k)lX_1-l or A - (Si)_nN_1-n)_o(H+X)_1-othe case where it comes out and constitutes -- the content of a nitrogen atom -- usually -- 30~60atom% -- suitable -- 40~60atom% and a halogen atom Or the content which combined the halogen atom and the hydrogen atom is usually 1~20atom%, The content of a hydrogen atom in case it is suitably considered as 2~15 atom % and both a halogen atom and a hydrogen atom contain is usually below 19 atom %, below 13 atom % is made suitable -- the display of k, l, m, and n -- k and l -- usually -- 0.43~0.60 -- suitable -- 0.43~0.49, m, and n -- usually -- 0.8~0.99 -- it is suitably referred to as 0.85~0.98. When it constitutes barrier layer 102 from amorphous material of an oxygen system, it is A-Si first._pO_1-pthen -- the content of an oxygen atom receives a silicon atom -- 60~67atom% -- being suitably considered as 63~67 atom % -- the display of O -- usually -- 0.33~0.40 -- it is suitably referred to as 0.33~0.37. A-(Si_pO_1-p)_qH_1-qa of case -- the content of an oxygen atom -- usually -- 39~66atom% -- suitable -- as the content of 42~64atom% and a hydrogen atom usually, 2~35atom% -- suitable -- the display of 5~30atom%, p, and q -- as p -- usually -- 0.33~0.40 -- suitable -- as 0.33~0.37 and q -- usually -- 0.65~0.98 -- it is 0.70~0.95 suitably. A-(Si_rO_1-r)_sX_1-sOr A - (Si)_tO_1-t)_u(H+X)_1-uWhen it comes out and constitutes, the content of an oxygen atom is usually 48~66atom% and the content which combined 51~66, the halogen atom or the halogen atom, and the hydrogen atom suitably, In usually, [ 1~20atom% and when it is suitably considered as 2~15 atom % and both a halogen atom and a hydrogen atom contain ] below as for 13 atom %, content of a hydrogen atom is usually made [ below 19 atom % ] suitable -- the display of r, a, t, and u -- r and s -- usually -- 0.33~0.40 -- suitable -- as 0.33~0.37, t, and u -- usually -- 0.80~0.99 -- it is suitably referred to as 0.85~0.98. As a metal oxide of the electrical insulation properties which constitute barrier layer 102 in the present invention, it is TiO.₂Ce₂O₃ZrO₂HfO₂GeO₂CaO, BeO, P₂O₅Y₂O₃Cr₂O₃aluminum₂O₃MgO, MgO-aluminum₂O₃SiO₂- It can mention as what has desirable MgO etc. This may use two or more sorts together, and may form a barrier layer. Formation of barrier layer 102 which comprises a metal oxide of electrical insulation properties, It accomplishes by vacuum evaporation method, the CVD (chemical vapour deposition) method, glow discharge part solution, the sputtering method, the ion plantation method, the ion plating method, the electron beam method, etc. For example, in order to form barrier layer 102 by the sputtering method, it may carry out by targeting the wafer of the starting material for barrier layer formation, and carrying out sputtering in the gas atmosphere for sputtering, such as helium, Ne, and Ar. Although the starting material for barrier layer formation may be put in in a vapor deposition port, it may irradiate with an electron beam and it may vapor-deposit, in using the electron beam method, Since it allows easily the Foto career which prevented the inflow of the career from base material 101 into amorphous layer 103, and occurred in amorphous layer 103 moving, and passing to the base material 101 side, it is formed as what shows an electrical-insulation-properties action. The numerical value range of the layer thickness of barrier layer 102 is one of the important factors for achieving the object effectively. If so thin that the layer thickness of barrier layer 102 passes enough, it is to amorphous layer 103 lateral projection from the base material 101 side, Or when so above thick that it becomes impossible for the work which prevents the inflow of the free career from the amorphous layer 103 side to base material 101 lateral projection to achieve enough and passes enough, The probability by the side of base material 101 of the Foto career which arises in amorphous layer 103 to pass becomes very small, therefore it becomes impossible to achieve the object of the present invention effectively at neither of the cases. as the layer thickness of barrier layer 102 for achieving the object of the present invention effectively in view of the above-mentioned point -- the usual case -- 30~1000A -- it is 50~600A suitably. In the present invention, amorphous layer 103 provided on base material 101 comprises A-Si (H, X) which has semiconducting properties shown below, and a carbon atom contains it by distribution which is mentioned below in the direction of layer thickness so that the object may be achieved effectively. p type A-Si (H, X) ......... Thing containing only Acceptor. Or both a donor and Acceptor are included and the concentration (Na) of Acceptor is high. p^-Model A-Si (H, X) ......... That to which the concentration (Na) of Acceptor carried out the rye tree dope what is called of the low p type impurities in the type. n type A-Si (H, X) ......... Thing including only a donor. Or both Acceptors are included with a donor and donor concentration (Nd) is high. n^-Model A-Si (H, X) ......... In a type, a donor's concentration (Nd) is what is called a low thing that would not be non-doped or carried out the rye tree dope of the n type impurities. i type A-Si (H, X) ......... The thing of NaNdO, or thing of NaNd. In the present invention, as halogen atom (X) contained in amorphous layer 103, fluoride, chlorine, bromine, and iodine are specifically mentioned and fluoride and chlorine can be especially mentioned as a suitable thing. In optical electric conduction member 100 of the present invention, it is in amorphous layer 103, the distribution -- the surface of base material 101 -- abbreviated Every -- in a parallel field, it is substantially uniform, and uneven in the thickness direction of a layer -- the surface side (setting to Drawing 1) where Then and base material 101 are opposite The layer field which the carbon atom contains as the distribution concentration has a field which changes continuously by being mostly distributed in the direction of the free surface 104 side and the position of the maximum Cmax is the above-mentioned surface or near [ its ] the pole is formed. The classic example of a distribution state of the direction of layer thickness of amorphous layer 103 of the carbon atom contained in amorphous layer 103 is shown in Drawings 2 thru/or 5. In Drawings 2 thru/or 5, a vertical axis shows layer thickness t of amorphous layer 103, and it is t.₀ts sets the contact interface position (lower surface) of amorphous layer 103 with other things of Is a support 101 or barrier layer 102 grade to Drawing 1 of an interface position (top surface) of amorphous layer 103 by the side of free surface 104 -- free surface 104 and the position -- it is -- expressing respectively -- t₀The thing which turn on Or and others [ ts ] and which it is alike, therefore is become thick [ layer thickness t ] is shown, and it is a horizontal axis, Distribution concentration C of the carbon atom in the arbitrary positions of the direction for layers of amorphous layer 103 is shown, increase of distribution concentration is shown in the direction of an arrow, and Cmax shows the maximum of the distribution concentration in the direction of layer thickness of the carbon atom in the layer field which a carbon atom contains. The distribution state in the inside of this layer 103 of the carbon atom contained in amorphous layer 103 in the example shown in Drawing 2 is lower surface position t.₀It increases continuously in monotonous as top surface position ts is reached more, and it is position t.₁It is alike, it sets and results in the maximum Oita cloth concentration Cmax, and after that, before surface position ts does not have change in distribution concentration C, and it is maintaining the value of Cmax. In Drawing 3, it is t.₀In the neighborhood, although the carbon atom is shown in that appearance which is not contained at all, below the detection limit of the amount of carbon atoms is for treatment intermediary To have, as the carbon atom does not contain. Therefore, the layer field where the quantity of a carbon atom is indicated to be 0 in the present invention (for example, t in Drawing 3)₀t₂The layer field of a between is treated as what a carbon atom is not contained at all or less than the amount of detection limits contains. At present, in our skill level, the detection limits of the amount of carbon atoms are ten-atom ppm to a silicon atom. In the optical electric conduction member of the present invention, a carbon atom contains the distribution state of a carbon atom in amorphous layer 103 so that distribution concentration may increase, as it becomes close to top surface position ts, so that formation of the Takamitsu sensitivity and the stable image quality characteristic may be acquired. When amorphous layer 103 of optical electric conduction member 100 created as shown in Drawing 1 has free surface 104, [ near the top surface position ts ], the content of a carbon atom is remarkably increased compared with other layer fields, and it can provide so that the maintenance capability of the electric charge given to free surface 104 may be raised. In this case, this layer field achieves the so-called function of a kind of barrier layer. Thus, it is although content of a carbon atom can be made extremely large compared with other layer fields and a top barrier layer can also be formed into amorphous layer 103 in about 104 free surface of amorphous layer 103, Independently, on the surface of amorphous layer 103, the material which constitutes barrier layer 102, and the same material can be used, and a top barrier layer can also be formed. as the layer thickness of the top barrier layer in this case -- usually -- 30 -- it is desirable to be suitably referred to as 50A~2micro A~5 micro. In the example shown in Drawing 3, it is lower part side t of amorphous layer 103.₀t₂In the layer field between of, a carbon atom is not contained at all, or less than the amount of detection limits is contained, and it is position t.₂It is t more.₃It is alike, a monotone increase is carried out to the function target near a linear function whose distribution concentration of a carbon atom is linear as it results, and it is position t.₃It is alike, it sets and reaches the maximum distribution concentration Cmax. t₃In the layer field between ts(es), the carbon atom is contained uniformly uniformly at the maximum distribution concentration Cmax. The example shown in Drawing 4 is a lower layer field (t) of amorphous layer 103 in Then and the figure at the reference example which is not contained in the range of the present invention.₀t₄In between, the distribution concentration is steady value C.₁It comes out and they are a uniformly uniform intermediary cage and an upper layer field (t).₄t₃Between of, in the state where it was distributed uniformly uniformly, the carbon atom contains and the distribution concentration is changing stair-like in a lower layer field and an upper layer field with the maximum distribution concentration Cmax. In the example shown in Drawing 5, it is lower surface position t of amorphous layer 103.₀Or positions t₄It is fixed distribution concentration C until it is alike and results.₁It comes out, the carbon atom contains and it is position t.₄It is position t more.₅It is alike, the distribution concentration of a carbon atom increases gradually as it results, and it is position t.₅The distribution concentration of a carbon atom increases rapidly, and the carbon atom is distributed so that the maximum distribution concentration Cmax may be taken very much in top surface position ts, until it reaches top surface position ts more. Although the maximum distribution concentration Cmax of a carbon atom can usually take a value which was described above in the present invention, it is suitably desirable 0.05~90atom% and to be chosen from the range of 0.1~90 atom % the optimal. The carbon atom contained in amorphous layer 103 in the optical electric conduction member of the present invention, As described above, distribution of the content is uneven in the direction of layer thickness of amorphous layer 103, And [ top surface position ts or near the ts ], it has the maximum Oita cloth concentration, and is Okay. from top surface position ts to lower surface position to, the distribution state where distribution concentration decreases is formed in the direction of layer thickness in amorphous layer 103 -- as -- a desired distribution state function -- therefore -- although the desired end of the present invention is what is attained effectively by being added in amorphous layer 103 The content of the carbon atom in the amorphous layer 103 whole to contain is also important for attaining the desired end of the present invention. In the present invention, the value of the whole quantity of a carbon atom contained in amorphous layer 103 can usually take the above-mentioned value. It is suitably desirable 0.005~20atom% and to be chosen from the range of 0.005~10 atom % the optimal. In the present invention, it accomplishes by the vacuum depositing method for using electric discharge phenomena, such as a glow discharge method, the sputtering method, or the ion plating method, for forming amorphous layer 103 which mainly comprises A-Si (H, X). For example, Si generation material gas which can generate Si to form amorphous layer 103 with a glow discharge method, May introduce the material gas for the halogen atom introduction for hydrogen atom introduction into the deposition interior of a room which an inside can make decompression, glow discharge may be made to occur in the deposition interior of a room, and the layer which consists of A-Si (H, X) may be made to form on the predetermined support surface currently beforehand installed in the prescribed position. In order to introduce into the layer which has a carbon atom formed, it may combine with growth of a layer and may introduce the material gas for carbon atom introduction into the above-mentioned deposition interior of a room at the time of formation of a layer. In forming by the sputtering method, when carrying out sputtering of the target formed by Si in the atmosphere of the mixed gas based, for example on gas, such as inactive gas, such as Ar and helium, or this, The gas for a hydrogen atom or/and halogen atom introduction may be introduced into the deposition room for sputtering. In this case, carrying out sputtering of the target for carbon atom introduction which combined with growth of the layer as a method of introducing the carbon atom in amorphous layer 103 which can be set, and introduced the material gas for carbon atom introduction all over the above-mentioned deposition room at the time of layer formation, or was beforehand provided all over the deposition room at the time of layer formation is mentioned. The carbon atom contained by the distribution state of a request in the direction of layer thickness in the amorphous layer formed, In forming an amorphous layer by the glow discharge method, the ion plating method, or the reaction sputtering method, the material gas for carbon atom introduction may be combined with growth of a layer at the time of formation of a layer, and it may introduce all over the deposition room for layer formation by a desired flow. In forming an amorphous layer by the sputtering method, the target for carbon atom introduction besides the above may be provided in the above-mentioned deposition interior of a room, and may be placed, and it may combine with growth of a layer, and may carry out sputtering of the above-mentioned target. In the present invention, being effectively used as a starting material used as the material gas for carbon atom introduction used in order to make a carbon atom contain in amorphous layer 103 can mention many things of a gas state or the carbon compounds which can be gasified easily. As such a starting material, saturated hydrocarbon of carbon number 1~5 which uses C and H as a composition atom, for example, ethylene system hydrocarbon of carbon number 2~5, hydrocarbon of acetylene series of carbon number 2~4, etc. are mentioned. Specifically as saturated hydrocarbon, it is methane (CH).₄Ethane (C)₂H₆Propane (C)₃H₈n-butane (n-C)₄H₁₀Pentane (C)₅H₁₂As ethylene system hydrocarbon, it is ethylene (C).₂H₄Propylene (C)₃H₆Butene-1 (C)₄H₈Butene- 2 (C)₄H₈Isobutylene (C)₄H₈Pen ten (C)₅H₁₀As hydrocarbon of acetylene series, it is acetylene (C).₂H₂Methyl acetylene (C)₃H₄Butyne (C)₄H₆etc. -- it is mentioned. As a starting material for carbon atom introduction which uses Si, and C and H else [, such as this, ] as a composition atom, it is Si (CH).₃)₄Si (C)₂H₅)₄silicification of etc -- Alkyl and SiCl (CH)₃)₃SiCl₂(CH₃)₂SiCl₃CH₃the containing halogen of etc -- silicification -- the derivative of Silang, such as Alkyl, and CCl₄CHF₃CH₂F₂CH₃Cl, CH₃Br, CH₃1 C₂H₅Halogen substitution paraffinic hydrocarbon, such as Cl, can also be mentioned as an effective thing. For forming amorphous layer 103 into which the carbon atom was introduced by the sputtering method, Or [ carrying out sputtering of the Si wafer of a single crystal or many crystals in the atmosphere of the material gas for carbon atom introduction, when forming amorphous layer 103 ], Or it may carry out by targeting the wafer which is mixed and Si wafer of a single crystal or many crystals, C wafer, or Si and C contain, and carrying out sputtering. For example, material gas same with having listed at the time of glow discharge as material gas for introducing a carbon atom, a hydrogen atom (H), or halogen atom (X), when using Si wafer as a target, It may dilute with dilution gas if needed, and may introduce all over the deposition room for sputtering, the gas plasma of gas, such as this, may be formed, and sputtering of the above-mentioned Si wafer may be carried out. Si and C are independently accomplished by carrying out sputtering in the gas atmosphere which contains a hydrogen atom (H) or halogen atom (X) at least by using the target of one sheet which Si and C as a separate target mixed. In the present invention, into amorphous layer 103, it is the object of acquiring the effect by introduction of a carbon atom, and the same effect, and, in addition to a carbon atom, can introduce an oxygen atom. As a starting material which serves as material gas for oxygen atom introduction when forming amorphous layer 103 with a glow discharge method, it is oxygen (O), for example.₂Ozone (O)₃Carbon monoxide (CO), carbon dioxide (CO)₂Or disiloxane H₃SiOSiH₃Trisiloxane H₃SiOSiH₂OSiH₃Low-grade Shiroki Sun of etc, etc. can be mentioned. It is SiO to be effectively used in the present invention as a material which can form the target for oxygen atom introduction, when forming amorphous layer 103 by the sputtering method.₂It is SiO etc. As Si generation material gas used when forming amorphous layer 103 in the present invention, it is SiH.₄Si₂H₆Si₃H₈Si₄H₁₀It is in the gas state of etc, or the Hydrogenated silicon matter (Silang) which can be gasified is mentioned as what is used effectively, and it is points, such as the ease of treating in the case of layer preparing work, and merit of Si generation efficiency, especially, and is SiH.₄Si₂H₆But -- it is mentioned as a desirable thing. Effective one as a starting material used as the material gas for halogen atom introduction used when forming amorphous layer 103 in the present invention, Many halogenated compounds are mentioned, for example, a halogen simple substance, hydrogen halide, an interhalogen compound, halogenation Silicon matter, halogen substitution Hydrogenated silicon matter, Hydrogenated silicon matter, etc. can be mentioned. Specifically as a halogen simple substance, they are BrF, ClF, and ClF as FH, HI, HCl, HBr, and an interhalogen compound as the halogen gas of fluoride, chlorine, bromine, and iodine, and hydrogen halide.₃ClF₅BrF₅BrF₃IF₇IF₅As ICl, IBr, and halogenation Silicon matter, it is SiF.₄Si₂F₆SiCl₄BiCl₃Br, SiCl₂Br₂SiClBr₃SiCl₃I, SiBr₄As halogen substitution Hydrogen silicide matter, it is SiH.₂F₂SiH₂Cl₂SiHCl₃SiH₃Cl, SiH₃Br, SiH₂Br₂SiHBr₃And so on can be mentioned. When the Silicon matter compound containing halogen of the starting material used as the above-mentioned material gas for halogen atom introduction is adopted and the characteristic optical electric conduction member of the present invention is formed with a glow discharge method, Even if it does not use the Hydrogenated silicon matter gas as material gas which can generate Si, the amorphous layer which comprises A-Si:X can be formed on a predetermined base material. a glow discharge method -- therefore, the case where amorphous layer 103 containing a halogen atom is created -- fundamental It introduces into the deposition interior of a room which forms an amorphous layer as becomes predetermined mixture-izing and a gas mass flow about the halogenation Silicon matter gas which is material gas for Si generation, and gas, such as Ar, Ne, and helium, Although amorphous layer 103 can be formed on a predetermined base material by occurring glow discharge and forming the plasma atmosphere of gas, such as this, in order to measure introduction of a hydrogen atom, it may mix in the specified quantity and may carry out layer formation also of the gas of the Silicon matter compound which contains a hydrogen atom in gas, such as this, further. Even if two or more sorts use each gas not only by an independent kind but by the predetermined mixture ratio, mixing, it does not interfere. For forming amorphous layer 103 which therefore changes mainly from A-Si (H, X) to the reaction sputtering method or the ion plating method, For example, using the target which comprises Si in the case of the sputtering method, sputtering of this is carried out in a predetermined gas plasma atmosphere, and, in the case of the ion plating method, it is, It can accommodate in a vapor deposition port by making polycrystalline silicon or single crystal silicon into an evaporation source, heating evaporation of this silicon evaporation source can be carried out by resistive heating or the electron beam method (the EB method), and a flight evaporation thing can be performed by passing the inside of a predetermined gas plasma atmosphere. Under the present circumstances, in order to introduce a halogen atom into the layer which is formed in any [ of the sputtering method and the ion plating method ] case, the gas of the Silicon matter compound containing an above-mentioned halogenated compound or the above-mentioned halogen atom may be introduced all over a deposition room, and the plasma atmosphere of the gas may be formed. (The material gas for hydrogen atom introduction, for example, H, when introducing a hydrogen atom)₂Gas, such as above-mentioned Silang, may be introduced all over the deposition room for sputtering, and the plasma atmosphere of the gas may be formed. It serves also as doping of impurities and is B.₂H₆PH₃PF₃The gas of etc can also be introduced. As for H contained in the amorphous layer of the optical electric conduction member formed, the quantity of X, or the quantity of (H+X), in the present invention, it is desirable usual case 1~40atom% and to be suitably considered as 5~30-atom %. In order to control H contained in a layer, or/and the quantity of X, quantity, electric discharge Power, etc. which are introduced into the deposition apparatus system of the starting material used in order to, make deposition base material temperature or/and H contain for example may be controlled. In order to use an amorphous layer as n type tendency, p type tendency, or i type, it accomplishes by doping, while controlling the quantity in the layer which has n type impurities, p type impurities, or both impurities formed in the case of the layer formation by glow discharge method, the reaction sputtering method, etc. As impurities doped in an amorphous layer, in order to make an amorphous layer into i type or p type tendency, the element of periodic law table A group A, for example, B, aluminum, Ga, In, Tl, etc. are mentioned as a suitable thing. When using n type tendency, the element of periodic law table A group A, for example, N, P, As, Sb, Bi, etc. are mentioned as a suitable thing. As a quantity of the impurities introduced into an amorphous layer since it has a desired conducted type in the present invention, it is 3x10 in the case of the impurities of periodic law table A group A.^-2It may dope in the quantity range below atom %, and, in the case of the impurities of periodic law table A group A, is 5x10.^-3It may dope in the quantity range below atom %. the layer thickness of an amorphous layer is conveyed in the predetermined direction where the Foto career which occurs in amorphous is efficient -- as -- a request -- therefore, it is decided suitably and 3~100 micrometers is usually 5~50 micrometers suitably. Gas may be introduced into the above-mentioned deposition interior of a room at the time of formation of a layer. In forming by the sputtering method, when carrying out sputtering of the target formed by Si in the atmosphere of the mixed gas based, for example on gas, such as inactive gas, such as Ar and helium, or this, The gas for a hydrogen atom or/and halogen atom introduction may be introduced into the deposition room for sputtering. In this case, carrying out sputtering of the target for carbon atom introduction which combined with growth of the layer as a method of introducing the carbon atom in amorphous layer 103 which can be set, and introduced the material gas for carbon atom introduction all over the above-mentioned deposition room at the time of layer formation, or was beforehand provided all over the deposition room at the time of layer formation is mentioned. Reference example The image formation member for electro-photography was created by operation like the following using the device shown in Drawing 6 installed all over the clean room shielded completely. The surface fixed strongly to fixed member 603 in the prescribed position in glow discharge deposition room 601 molybdenum sheet (substrate) 609 of 10 cm of 0.5-mm thickness angle made purification. Substrate 609 is heated in the accuracy of ±0.5 degreeC with heating heater 608 in fixed member 603. Temperature was made as [ carry out / a thermo couple (Almel- Cros Mel) / direct measurement of the substrate back ]. Subsequently, after checking that all the valves in a system are closed, main valve 610 is opened fully, the inside of A room 601 is exhausted, and it is about 5x10.^-6The degree of vacuum of Torr was used. The input voltage of heater 608 is raised after that, input voltage is changed, detecting molybdenum substrate temperature, and you made it stabilized until it reached a steady value of 250 degreeC. Then, auxiliary valve 641 and then outflow valve 626,627,629, and inflow valve 621,622,624 were opened fully, and it also changed the inside of massflow controller 616,617,619 into the deaeration vacuum state enough. H after closing auxiliary valve 641 and valves 626, 627, and 629,621,622,624₂SiH which came out and was diluted to 10vol%₄Gas (99.999% of purity, henceforth, SiH)₄(10)/H₂Valve 631 of cylinder 611 to omit, H₂C which came out and was diluted to 0.1vol%₂H₄Gas (99.999% of purity, henceforth, C)₂H₄(0.1)/H₂It omits. Valve 632 of cylinder 612 is opened and it is 1kg/cm about Pressure of exit pressure gauge 636,637.²It is alike, and adjusts, inflow valve 621,622 is opened gradually, and it is SiH into massflow controller 616,617.₄(10)/H₂Gas, C₂H₄(0.1)/H₂Gas was made to flow. Then, outflow valve 626,627 was opened gradually and, subsequently auxiliary valve 641 was opened gradually. At this time, it is SiH.₄(10)/H₂Gas volume and C₂H₄(0.1)/H₂Massflow controller 616,617 was adjusted so that a gas mass flow ratio might be set to 10:0.3. Next, the opening of auxiliary valve 641 is adjusted, gazing at reading of Pirani gauge 642, and the inside of A room 601 is 1x10.^-2Auxiliary valve 641 was opened until it was set to Torr. It is Squeezed about an opening until it closes main valve 610 gradually and directions of Pirani gauge 642 are set to 0.1Torr, after A room 601 internal pressure is stabilized. It checks that gas stream ON is stabilized and internal pressure is stabilized, it continues, the switch of high frequency power supply 643 is made into an ON state, and shutter (it serves as an electrode.) 605 is closed-Into(ed), 13.56-MHz high frequency electric power was switched on between electrode 603 and shutter 605, glow discharge was generated in A room 601, and it was considered as the input power of 10W. The lower field layer which constitutes a Keep it amorphous layer for the above-mentioned conditions for 3 hours was formed. Then, high frequency power supply 643 is changed into an off state, where glow discharge is stopped, outflow valve 627 is closed, and then, it is C.₂H₄Valve 634 is led from gas (99.999% of purity) cylinder 614, and it is 1kg/cm.²of gas pressure (reading of exit pressure gauge 639) opens inflow valve 624 and outflow valve 629 gradually, and it is C to massflow controller 619.₂H₄Gas is passed and it is C by adjustment of massflow controller 619.₂H₄Gas is SiH.₄(10)/H₂It is made to become gas mass flows 1/10, and they were stabilized. Then, high frequency power supply 643 was again made into the ON state, and glow discharge was made to resume. The input at that time was set to 3W. In this way, after forming in the thickness of 600A the top field layer which makes glow discharge maintain for 10 more minutes, and constitutes the main crystalloid layer, High frequency power supply 648 is also changed into an off state, it flows out of The which waits to set substrate temperature to 100 degreeC, valve 626,629 and inflow valve 621,622,624 are closed [ heating heater 608 is changed into an off state, ], main valve 610 is made full open, and it is inside of A room 601 10^-5After using below Torr, main valve 610 was closed and the substrate was taken out for the inside of A room 601 as atmospheric pressure by leak valve 606. In this case, the overall thickness of the formed layer is about 9 micrometers, and is Oh. The image formation member obtained in this way was installed in the electrification exposure experimental device, corona electrical charging was performed for 0.2 sec at 5.5 kV, and it irradiated with the light figure immediately. The light figure made it irradiate with the light volume of 1.0 lux-sec through a penetrated type test chart using a tungsten lamp light source. The good toner picture was immediately obtained on the member surface after that by carrying out the cascade of the development agent (a toner and a carrier are included) of chargeability to the member surface. It excelled in the place and resolution which transferred the toner picture on a member on the decalcomania paper by 5.0-kV corona electrical charging, and the good clear high-concentration picture of tone reproduction was obtained. Example 1 A molybdenum substrate is installed like a reference example, and it continues, and is inside of glow discharge deposition room 601 by the same operation as a reference example 5x10^-6The vacuum of Torr is made and substrate temperature opens auxiliary valve 641 and then outflow valve 626,627,629, and inflow valve 621,622,624 fully by the same operation as the back reference example maintained at 250 degreeC, It also changed the inside of massflow controller 616,617,619 into the deaeration vacuum state enough. SiH after closing auxiliary valve 641 and valves 626, 627, and 629,621,622,624₄(10)/H₂Valve 631 of gas (99.999% of purity) cylinder 611, C₂H₄(0.1)/H₂Valve 632 of gas cylinder 612 is opened and it is 1kg/cm about Pressure of exit pressure gauge 636,637.²It is alike, and adjusts, inflow valve 621,622 is opened gradually, and it is SiH into massflow controller 616,617.₄(10)/H₂Gas, C₂H₄(0.1)/H₂It was made to flow respectively. Then, outflow valve 626,627 was opened gradually and, subsequently auxiliary valve 641 was opened gradually. At this time, it is SiH.₄(10)/H₂A gas mass flow and C₂H₄(0.1)/H₂Massflow controller 616,617 was adjusted so that a gas mass flow ratio might be set to 10:0.3. Next, the opening of auxiliary valve 641 is adjusted, gazing at reading of Pirani gauge 642, and the inside of A room 601 is 1x10.^-2Auxiliary valve 641 was opened until it was set to Torr. It is Squeezed about an opening until it closes main valve 610 gradually and directions of Pirani gauge 641 are set to 0.1Torr, after A room 601 internal pressure is stabilized. It checks that gas stream ON is stabilized and internal pressure is stabilized, it continues, and is a shutter (it serves as an electrode.). 605 was closed-Into(ed), the switch of high frequency power supply 643 was made into the ON state, 13.56-MHz high frequency electric power was switched on between electrodes 603,605, glow discharge was generated in A room 601, and it was considered as the input power of 10W. Across and the flow rate set value of massflow controller 617 are continuously increased in 5 hours at the same time it begins to form on a substrate the lower field layer which constitutes an amorphous layer on the above-mentioned conditions, and it is SiH of 5 hours after.₄(10)/H₂A gas mass flow and C₂H₄(0.1)/H₂The ratio of the gas mass flow adjusted so that it might be set to 1:1. The appearance is used and high frequency power supply 643 is changed into an off state after 5-hour progress, where glow discharge is stopped, it flows out, and valve 627 is closed, and then it is C.₂H₄Valve 634 is led from gas cylinder 614, and it is 1kg/cm.²of gas pressure (reading of exit pressure gauge 639) opens inflow valve 624 and outflow valve 629 gradually, and it is C to massflow controller 619.₂H₄Gas is passed and it is C by adjustment of massflow controller 619.₂H₄The flow of gas is SiH.₄(10)/H₂It is made to become 1/10 of the flows of gas, and it was stabilized. Then, high frequency power supply 643 was again made into the ON state, and glow discharge was made to resume. Input power at that time was set to 3W. In this way, after making glow discharge maintain for 15 more minutes and forming a top field layer, High frequency power supply 643 is also changed into an off state, it flows out of The which waits to set substrate temperature to 100 degreeC, valve 626,629 and inflow valve 621,622,624 are closed [ heating heater 608 is changed into an off state, ], main valve 610 is made full open, and it is inside of A room 601 10^-5After using below Torr, the main valve was closed and the substrate was taken out for the inside of A room 601 as atmospheric pressure by leak valve 606. In this case, the overall thickness of the formed layer is about 15 micrometers, and is Oh. When the picture was formed on the decalcomania paper in the conditions and procedure same to this image formation member as To ask and a reference example, very clear image quality was obtained. Example 2 A molybdenum substrate is installed like a reference example, and it continues, and is inside of glow discharge deposition room 601 by the same operation as a reference example 5x10^-6After making the vacuum of Torr and maintaining substrate temperature at 250 degreeC, auxiliary valve 641 and then outflow valve 626,627, and inflow valve 621,622 were opened fully, and the same operation as a reference example also changed the inside of massflow controller 616,617 into the deaeration vacuum state enough. H after closing auxiliary valve 641 and valve 626,627,621,622₂SiH which came out and was diluted to 10vol%₄(10)/H₂Valve 631 of gas (99.999% of purity) cylinder 612, H₂C which came out and was diluted to 0.1vol%₂H₄(0.1)/H₂Valve 632 of gas cylinder 612 is opened and it is 1kg/cm about Pressure of exit pressure gauge 636,637.²It is alike, and adjusts, inflow valve 621,622 is opened gradually, and it is SiH into massflow controller 616,617.₄(10)/H₂Gas, C₂H₄(0.1)/H₂the each inflow was carried out. Then, outflow valve 626,627 was opened gradually and, subsequently auxiliary valve 641 was opened gradually. At this time, it is SiH.₄(10)/H₂A gas mass flow and C₂H₄0.1)/H₂Inflow valve 621,622 was adjusted so that a gas mass flow ratio might be set to 10:0.3. Next, the opening of auxiliary valve 641 is adjusted, gazing at reading of Pirani gauge 642, and the inside of A room 601 is 1x10.^-2Auxiliary valve 641 was opened until it was set to Torr. It is Squeezed about an opening until it closes main valve 610 gradually and directions of Pirani gauge 641 are set to 0.1Torr, after A room 601 internal pressure is stabilized. It checked that gas stream ON was stabilized and internal pressure was stabilized, it continued, shutter (it serves as an electrode.) 605 was closed-Into(ed), the switch of high frequency power supply 643 was made into the ON state, 13.56-MHz high frequency electric power was switched on between electrodes 603,605, glow discharge was generated in A room 601, and it was considered as the input power of 10W. Across and the flow rate set value of massflow controller 617 are continuously increased in 5 hours at the same time it begins to form an amorphous layer on a substrate on the above-mentioned conditions, and it is SiH of 5 hours after.₄(10)/H₂A gas mass flow and C₂H₄(0.1)/H₂The gas mass flow ratio adjusted so that it might be set to 1:10. In this way, heating heater 608 is changed into an off state, after forming an amorphous layer, high frequency power supply 643 is also changed into an off state, and it flows out of The which waits to set substrate temperature to 100 degreeC, and valve 626,627 and inflow valve 621,622 are closed, main valve 610 is made full open, and it is inside of A room 601 10^-5After using below Torr, main valve 610 was closed and the substrate was taken out for the inside of A room 601 as atmospheric pressure by leak valve 606. In this case, the overall thickness of the formed layer is about 15 micrometers, and is Oh. When the picture was formed on the decalcomania paper in the conditions and procedure same to this image formation member as To ask and a reference example, the very clear picture was obtained. Example 3 SiH₄(10)/H₂It is SiF about gas cylinder 611.₄To a gas (99.999% of purity) cylinder, it is C.₂H₄(0.1)/H₂About gas cylinder 612, it is C.₂H₄0.2vol% -- the included argon (henceforth [ C ])₂H₄(0.2) It abbreviates to /Ar. It replaces with a 99.999% of purity gas cylinder, and is SiF at the time of the deposition early stages of an amorphous layer.₄A gas mass flow and C₂H₄(0.2) A /Ar gas mass flow ratio is set as 1:0.6, layer formation is started, and it is SiF at the time of the end of deposition of an amorphous layer.₄A gas mass flow and C₂H₄(0.2) It is C so that the ratio of a /Ar gas mass flow may be set to 1:18.₂H₄(0.2) The amorphous layer was formed on the molybdenum substrate on the same operation conditions as Example 2 except having carried out the continuous increase of the /Ar gas mass flow, and also having set input power of glow discharge to 100W. In this case, the thickness of the formed layer is about 18 micrometers, and is Oh. When the picture was formed on the decalcomania paper in the conditions and procedure same to this image formation member as To ask and a reference example, the very clear picture was obtained. Example 4 A molybdenum substrate is installed like a reference example, and it continues, and is inside of glow discharge deposition room 601 by the same operation as a reference example 5x10^-6The vacuum of Torr is made, and substrate temperature opens auxiliary valve 641 and then outflow valve 626,627,628,629, and inflow valve 621,622,623,624 fully, after being maintained at 250 degreeC, It also changed the inside of massflow controller 616,617,618,619 into the deaeration vacuum state enough. It is SiH after closing auxiliary valve 641 and valves 626, 627, 628, 629, and 621,622,623,624.₄(10)/H₂Valve 631 of gas cylinder 611, C₂H₄(0.1)/H₂Valve 632 of gas cylinder 612, H₂B which came out and was diluted by 50vol ppm₂H₆Gas (99.999% of purity, henceforth, B)₂H₆(50)/H₂It omits. Valve 633 of cylinder 613 is opened and it is 1kg/cm about Pressure of exit pressure gauge 636,637,638.²It is alike, and adjusts, inflow valve 621,622,623 is opened gradually, and it is SiH into massflow controller 616,617,618.₄(10)/H₂Gas, C₂H₄(0.1)/H₂Gas, B₂H₆(50)/H₂Gas was made to flow. Then, outflow valve 626,627,628 was opened gradually and, subsequently auxiliary valve 641 was opened gradually. At this time, it is SiH.₄(10)/H₂A gas mass flow and C₂H₄(0.1)/H₂Gas mass flow ratios are 10:0.3 and SiH.₄(10)/H₂A gas mass flow and B₂H₆(50)/H₂Massflow controller 616,617,618 was adjusted so that a gas mass flow might be set to 50:1. Next, the opening of auxiliary valve 641 is adjusted, gazing at reading of Pirani gauge 642, and the inside of A room 601 is 1x10.^-2Auxiliary valve 641 was opened until it was set to Torr. It is Squeezed about an opening until it closes main valve 610 gradually and directions of Pirani gauge 642 are set to 0.1Torr, after A room 601 internal pressure is stabilized. It checks that gas stream ON is stabilized and internal pressure is stabilized, it continues, the switch of high frequency power supply 643 is made into an ON state, and shutter (it serves as an electrode.) 605 is closed-Into(ed), 13.56-MHz high frequency electric power was switched on between electrode 603 and shutter 605, glow discharge was generated in A room 601, and it was considered as the input power of 10W. It is SiH at the same time it begins to form the lower field layer which constitutes an amorphous layer from above-mentioned conditions.₄(10)/H₂A gas mass flow and S₂H₄(0.1)/H₂The ratio of the of gas mass flow was made to increase like Example 1, and massflow controller 617 was adjusted so that the value of 3 hours after might be set to 1:1. Then, high frequency power supply 643 is changed into an off state, where glow discharge is stopped, outflow valve 627,628 is closed, and it is C.₂H₄Valve 634 is led from gas cylinder 614, and it is 1kg/cm.²of gas pressure (reading of exit pressure gauge 639) opens inflow valve 624 outflow valve 629 gradually, and it is C to massflow controller 619.₂H₄Gas is passed and it is C by adjustment of massflow controller 616,619.₂H₄Gas is SiH.₄(10)/H₂It was made to stabilize so that it may become 1/10 of the flows of gas. Then, the ON state of high frequency power supply 643 was used again, and glow discharge was made to resume. Input power at that time was set to 3W. In this way, after making glow discharge maintain for 10 more minutes and forming a top field layer in the thickness of 600A, High frequency power supply 643 is also changed into an off state, it flows out of The which waits to set substrate temperature to 100 degreeC, valve 626,629 and inflow valve 621,622,623,624 are closed [ heating heater 608 is changed into an off state, ], main valve 610 is made full open, and it is inside of A room 601 10^-5After using below Torr, main valve 610 was closed and the substrate was taken out for the inside of A room 601 as atmospheric pressure by leak valve 606. In this case, the overall thickness of the formed layer is about 9 micrometers, and is Oh. The image formation member obtained in this way was installed in the electrification exposure experimental device, corona electrical charging was performed for 0.2 sec at 5.5 kV, and it irradiated with the light figure immediately. The light figure made it irradiate with the light volume of 1.0 lux-sec through a penetrated type test chart using a tungsten lamp light source. The good toner picture was immediately obtained on the member surface after that by carrying out the cascade of the development agent (a toner and a carrier are included) of chargeability to the member surface. It excelled in the place and resolution which transferred the toner picture on a member on the decalcomania paper by 5.0-kV corona electrical charging, and the picture of the good clear optical concentration of tone reproduction was obtained. Next, To ask and an electrification exposure experimental device perform corona electrical charging for 0.2 sec to the above-mentioned image formation member at 6.0 kV, Picture exposure was immediately performed with the light volume of 0.8 lux-sec, the cascade of the development agent of chargeability was immediately carried out to the member surface after that, and when it was transferred and established on the decalcomania paper next, the very clear picture was obtained. It is I found out for the image formation member for electro-photography obtained in this example not to have the dependence over electrification polarity, and to provide the characteristic of a polarity image formation member from this result and the result of the point. Example 5 The electrophotographic image formation member was created by operation like the following using the device shown in Drawing 6. The surface fixed strongly to fixed member 603 in the prescribed position in deposition room 601 molybdenum (substrate) 609 of 10 cm of 0.5-mm thickness angle made purification. Target 604 installs high purity graphite (99.999%) on multi-crystal high purity silicon (99.999%), and the surface ratio is silicon:graphite =1:9 and intermediary To have. Substrate 609 is heated in the accuracy of ±0.5 degreeC with heating heater 608 in fixed member 603. Temperature was made as [ carry out / a thermo couple (Almel- Cros Mel) / direct measurement of the substrate back ]. Subsequently, after checking that all the valves in a system are closed, main valve 610 is opened fully, and it is once 5x10.^-6It is evacuated to a Torr grade (the valve of the system is closed at this time), After auxiliary valve 641 and outflow valve 626,627,629,630 were opened and the inside of massflow controller 616,617,619,620 was fully deaerated, outflow valve 626,627,629,630 and auxiliary valve 641 were closed. Valve 635 of argon (99.999% of purity) gas cylinder 615 is opened, and delivery pressure a total of 640 reading is 1kg/cm.²After it was alike, and being adjusted so that it might become, inflow valve 625 can open and flows out continuously, and valve 630 could open gradually and made argon gas flow in A room 601. Directions of Pirani gauge 611 are 5x10.^-4After outflow valve 630 can open gradually and a flow is stabilized in this state until it is set to Torr, main valve 610 is closed gradually, and internal pressure is 1x10.^-2The opening was extracted until it was set to Torr. By making shutter 605 into Open, after checking that massflow controller 620 was stabilized, high frequency power supply 643 was made into the ON state, and the exchange electric power of 13.56 MHz and 100W was inputted between target 604 and fixed member 603. Matching was taken so that the electric discharge stable on this condition might be continued, and the layer was formed. Thus, electric discharge was continued for 1 minute and the lower barrier layer of 100A thickness was formed. High frequency power supply 643 was changed into the off state after that, and electric discharge was once stopped. It flows out succeedingly and valve 630 is closed, main valve 610 is opened fully, the gas in A room 601 is extracted, and it is 5x10.^-6It evacuated to Torr. The input voltage of heater 608 is raised after that, input voltage is changed, detecting substrate temperature, and you made it stabilized until it reached a steady value of 200 degreeC. After that, the amorphous layer was formed on the same operation as a reference example, and conditions. Thus, in the obtained image formation member, when the picture was formed on the decalcomania paper in the same conditions and procedure as a reference example, very clear image quality was obtained. Example 6 C of Example 3₂H₄(0.2) It is C about /Ar gas.₂H₄(0.2)/H₂The amorphous layer was formed on the molybdenum substrate on the same operation as Example 3, and conditions except having replaced with the gas cylinder. In this case, the thickness of the formed layer is about 15 micrometers, and is Oh. When the picture was formed on the decalcomania paper in the conditions and procedure same to this image formation member as a To ask reference example, the very clear picture was obtained. Example 7 In Example 1~6, it is C.₂H₄It is CH to Instead of.₄Except Was used, in each example, when the electrophotographic image formation process in each corresponding example was applied to the optical electric conduction member created with the same conditions and procedure as abbreviated Every, the very quality transfer picture was able to be obtained. Deterioration of transfer image quality was not observed in the repetition use covering a long time.

[Brief Description of the Drawings]

Drawing 1 is a typical lineblock diagram for explaining the layer structure of the example of an embodiment with an optical preferred electric conduction member of the present invention, A typical explanatory view for Drawings 2 thru/or 5 to illustrate the distribution state of the carbon atom respectively contained in the amorphous layer of an optical electric conduction member and Drawing 6 are typical explanatory views showing an example of the device for creating the optical electric conduction member of the present invention. 100 ...... optical electric conduction member, 101 ...... base material, 102 ...... barrier layer, 103 ...... amorphous layer.