Sliding type liquid phase epitaxial growth device

[Detailed Description of the Invention]

This invention relates to a slide system liquid-phase-epitaxial-growth device. Although the thing of various form is proposed from the former by the slide system liquid-phase-epitaxial-growth device, The method of replacing it as Melt for growth which finished growth of the layer which is also inside is pushed out by Melt for growth which will seemingly be new as for the next, and growing up the following layer by this Melt, The device it was made to grow up a plurality of epitaxial layers continuously on a semiconductor substrate is known as a device which can obtain a semiconductor device with good crystallinity and a surface state, in order to always protect by Melt for growth, without making atmosphere gas touched with an epitaxial growth interface. An example of such a conventional slide system liquid-phase-epitaxial-growth device is shown in Drawing 1. 1 -- each -- the base which juxtaposed and formed in the inside cisterns 4 and 5 which boil another Melt 2 and 3 for growth, respectively, and store it, It is inserting slidably in the upper part of substrate 1 the extrusion piece which located 6 and 7 on Melt 2 and 3 for growth in cistern 4 and 5, and formed cam slopes 6a and 7a in the upper surface 1 side, and 8, and pressing cam slopes 6a and 7a according to tip cam surface 8a, The slider for operation which enabled it to push out Melt 2 and 3 via extrusion pieces 6 and 7, The slider for growth which contacted 9 on the undersurface of substrate 1 slidably, the growth room where 10 stores two crystal base boards 11 and 12, the passage where 13 makes cistern 4 or 5 open this growth room 12 for free passage, and 14 are the passages for leading Drainage from growth room 12 to Drain tank 15. Therefore, you make it located in the above-mentioned composition, so that the passage 13 may open slider 9 for growth for free passage to one cistern 4 by the side of this side first. Slider 8 for operation is moved in this state, it pushes out, piece 6 is pressed below, Melt 2 for growth currently stored in cistern 4 is pushed in in growth room 10 from this passage 13, and the epitaxial layer of GaAs is grown up into the 11 or 12th page of a crystal base board by this. subsequently -- if it is made to hold in this state and growth is finished for a predetermined period -- if -- it is further moving slider 9 for growth, and making cistern 5 of another side open passage 13 for free passage, and moving slider 8 for operation again, and making extrusion piece 7 press below shortly Melt 3 for growth in cistern 5 is pushed in in growth room 10, as previous Melt 2 is pushed out from passage 14 to Drain tank 15, and a new epitaxial layer is continued and grown up into the 11 or 12th page of each crystal base board by this. That is, thus, the multilayer epitaxial layer can be obtained by making it grow up one by one. If microscope observation of the growth interface on crystal base board 11 and 12 obtained by such a conventional slide system liquid-phase-epitaxial-growth device and the surface is carried out, carrying out a deer, The inconvenience that the direction of substrate 12 placed on the upper part does not bear use as an element of which it is inferior to crystallinity and flat nature, and a quality crystal is required rather than substrate 11 placed by the lower part is Oh. This cause is considered as follows. That is, the temperature of a growth furnace performs Together with nuclear weapons generation for falling, and the Solute element which has melted into Melt 2 and 3 for growth deposits on the inside of Melt, and the Melt surface. Although GaAs in Melt will try to come floating in Melt and this case since specific gravity is smaller than Ga if the liquid phase epitaxial of GaAs is taken for an example, If the melt depth will be intermingled in Melt by large (usually 5~10 mm) one compared with rise distance, pushes this out and pushes out in growth room 10 by pieces 6 and 7, Since GaAs in Melt 2 and 3 which deposited has the low height of growth room 10 (usually about 1 mm), the inside of Melt is risen to surface, and the 12th page of an upside crystal base board will be reached easily, it will adhere to it, and this adhering GaAs will spoil the crystallinity of an epitaxial interface and the surface, and flat nature. In order to improve such a conventional fault, when a crystal base board is arranged in the middle of the passage to a growth room and Melt for growth passes, it is made for this invention to make the operation which adheres, and removes the depositing substance and makes saturation Melt super saturation Melt of the depositing preceding paragraph story perform. With reference to Drawing 2 per example of this invention device, it explains in detail above. This 2nd [ The ] figure example is a perspective view expanding and showing the passage portion to a growth room in the above-mentioned equipment configuration. In this Drawing 2, the portion same [ the same numerals as above-mentioned Drawing 1 ] or considerable is shown, and in this example, slot 16 is made to form in the both sides of the passage 13 above-mentioned portion, and between each slot 16 and 16, thin crystal base board 17 is put at intervals of about 300 micrometers in this case, and is passed. Therefore, when in this example composition moving slider 8 for operation, pushing out and pushing in Melt 2 and 3 for growth in cistern 4 and 5 in growth room 10 from passage 13 by pieces 6 and 7, Capture removal of the precipitation thing intermingled in Melt can be carried out with this crystal base board 17, and saturation Liquefaction of the super saturation Melt can be carried out, In order to lead Melt which avoided that an unnecessary precipitation thing adhered on substrate 12, did not spoil the crystallinity of an epitaxial interface and the surface, and flat nature by this, and reached saturation collectively to growth room 10, it can grow up to be a basis of film thickness control satisfactorily [ reproducibility ]. Although the above-mentioned example is arranging a plurality of crystal base boards 17 in the shape of Comb teeth, even if many small holes are made in one crystal base board and it makes it lead Melt to it through these small holes, or once it contacts Melt to another crystal base board again, of course, it may be made to lead in crystal room 10. Since he is trying to remove the precipitation thing intermingled in Melt according to this invention as explained in full detail above when stuffing Melt for growth into a growth room, Also to the crystal base board placed on the upper part, it is uniform and can grow up the good epitaxial layer of crystallinity and flat nature uniformly, Since productivity doubles as a result which can obtain simultaneously the epitaxial growth crystal of the upper part and the two lower parts and super saturation Melt is adjusted to saturation Melt, It is lost that rapid growth is made the moment Melt contacted the crystal base board, and film thickness control of a submicron unit can be performed with sufficient reproducibility, and structure also has the feature of it being able to be easy and being able to carry out easily.

[Brief Description of the Drawings]

It is a section perspective view which Drawing 1 expands the important section by one example of the slide system liquid-phase-epitaxial-growth device concerning this invention in the sectional view and Drawing 2 showing the slide system liquid-phase-epitaxial-growth device by a conventional example, and is shown. 1 ...... A base, 2, 3 ...... Melt for growth, 4, 5 ...... A cistern, 6, 7 ...... An extrusion piece, 8 [ ...... The crystal base board for / growing-up /, 13 / ...... A passage, 15 / ...... Drain tank, 16 / ...... A slot, 17 / ...... Crystal base board for precipitation thing capture ] ...... The slider for operation, 9 ...... The slider for growth, 10 ...... A growth room, 11, 12