Table for wafer positioning

[Detailed Description of the Invention]

(Field of the Invention) the present invention -- the center position of a wafer -- when it is related with the Fitted table for positioning to perform, and it Taking out from a wafer cassette and is made to transport to the holder of a process machine, it uses for the middle table etc. which are installed in order to unite a center position, and is suitable. (PRIOR ART) When making it transport conventionally via the arm etc. which picked out the wafer from the cassette and equipped the holder of the process machine with the vacuum sucker, in order to put a wafer on the right predetermined position on the holder, The middle table was provided before the holder and center position Matching of a wafer has been beforehand performed on the middle table. the -- the [ the important section top view of the conventional wafer positioning device whichA / 4 / figure is provided on the above-mentioned middle table, and is used for center position Matching of a wafer, and ] --B [ 4 ] figure -- the -- the [ the VI-IV line sectional view ofA / 4 / figure, and ] --C [ 4 ] figure is a sectional view showing the state where it was positioned. in a figure -- 1 and 1 -- the circumference part of the undersurface of wafer 2 -- The120degree -- it is the annular nail divided into two which covers every and it supports -- both these nails 1 and 1, It has horizontal level 1a which supports the undersurface circumference part of Ueno~2, and spittle 1b which rose to the upper part which is formed in the outside of the horizontal level 1a, and regulates the peripheral surface position of wafer 2, and slope'1 c is formed in the inside of the spittle 1b. and -- passing such both nail 1.I#'i and the linkage mechanism which is not illustrated -- the -- as shown inB [ 4 ] figure, it spread symmetrically in the horizontal direction -- it is supported on the middle table so that Si Narrowed Si can be carried out. wafer 2 is placed among both nails 1 and 10 of the position which separated wafer 2 from the sucker and was opened from right above both nails 1 and 1 (the --B [ 4 ] figure shows the position of the nail at this time.) installed in the prescribed position on a Yo Si middle table as mentioned above at the linkage mechanism. Next, if both nails 1 and 1 are closed from right and left, interior slope 1cK this Si of periphery Suddenly 1b of wafer 2 and a center position arrangement of a wafer will have been performed. (Problem which an invention tends to solve) In the above-mentioned conventional wafer positioning device, the undersurface circumference part of wafer 2 contacts directly on horizontal level Ia of nail l. However, since resist m was usually formed in the undersurface of - wafer 2, there were Si whom resist m of the above-mentioned contact part rubbed against horizontal level 1a, and the crack attached, and a possibility that exfoliation of a resist film might arise, and there were problems, like this serves as a source of dust. The present invention makes it the technical subject to position the above-mentioned problem of conventional technology without making the undersurface of a solution-wafer contact on a direct support table. (It is zero means in order to solve a problem) in order that the present invention may solve the above-mentioned problem and technical problem of conventional technology -- Outside Si of a wafer -- in the flat face top of Cheegle which has a large Flat side -- two or more blows of gas -- it is characterized by allocating on the circumference near [ hole ] the wafer perimeter. 0 (OPERATION) which can form the above-mentioned blow-of-gas hole in various shape, such as an eyebrows form opening besides a circular opening The present invention constituted as mentioned above. Therefore, the wafer transported on Chisol with the sucker on an arm, etc., A horizontal position is regulated by gas stream which raises and surfaces by jet gas from two or more blow-of-gas holes allocated on the circumference [ near / the / the wafer perimeter ] on a flat face, and flows in a wafer side and the right-angled direction along with the peripheral part. Therefore, a wafer is positioned in the prescribed position on a table by the jet gas from two or more blow-of-gas holes drilled in the position decided beforehand. (EXAMPLE) Next, the example of the present invention is described with a drawing. the -- the [ the top view of the table for wafer positioning in whichA / 1 / figure shows the 1st example of the present invention, and ] --B [ 1 ] figure -- the -- the [ the I-I line sectional view ofA / 1 / figure, and ] --C [ 1 ] figure is a sectional view showing an operation state -- Cheegle 10, having circular flat face 11 of the diameter of a wafer Outer diameter. Si large -- the shoulder edge of the flat face 11 -- about surfacing of a wafer -- fftK -- Ho -- it has equal height -- rank next (helicopter) -- 12 is formed in one. Below, it has gas chamber 13 and, in the gas chamber 13, external compression is opened for free passage via connection mouth 14 by the source of A. and -- the above-mentioned flat face 11 -- the -- as shown inC [ 1 ] figure, all the circumferences are covered and two or more blow-of-gas holes 15 are mostly drilled in the position where it passes along the center of a hole mostly (the peripheral face near the peripheral face (i.e., a wafer peripheral face) of wafer 2) at equal intervals. Wafer 2 transported to flat face 11 of table 10 since it is constituted as mentioned above, O to which positioning is performed in the position which the horizontal position was regulated and surfaced from flat face 11 with the film of discontinuous gas which meets the wafer peripheral face formed of jet gas stream 15a which blows off from blow-of-gas hole 15 In this example, since gas stream 151 which blows off from hole 15 by providing spittle 12 in the perimeter edge of flat face 11 is prevented from being spread to the method of outside, the regulation operation of the horizontal position of wafer 2 is performed effectively. The flow velocity of the jet gas from the position of a blow-of-gas hole, a size, shape, and this hole, an interval with spittle, the height of spittle, etc. are sea urchins.. Disorder of a whirlpool etc. does not arise in an aspect-of-affairs part, but it is selected by the proper size so that the center position stable after Ueno % had surfaced may be occupied. the -- the [A / 2 / figure thru/or ] -- the [C / 2 / figure indicates the 2nd example of the present invention to be ] -- the [ 1 8 figure thru/or ] -- it is the same drawing asC [ 1 ] figure -- this example Blow-of-gas holes 25a and 25b drilled in flat face 21 K Carry out, and are continued and drilled in two rows so that a position may be mutually shifted on a concentric circle, and it is inside blow-of-gas hole 25a, Like jet hole 15 of the 1st example, near the peripheral face of wafer 2, blow-of-gas hole 25b of the drilling Sawa outside is the point currently drilled in the outside, and strange Si is not in respect of the 1st example, different Si, and others. according to this example -- the -- as shown inC [ 2 ] figure, by the jet gas from inside blow-of-gas hole 25a, Ueno 12 on flat face 21 is flattered, and surfaces, and a horizontal position is regulated by the jet gas stream from the both sides of blow-of-gas hole 25a of the inner side, and outside blow-of-gas hole 25b. If upheaval part 2'2a projected to the inner direction is provided in the internal surface of spittle 22 in this case, it will become possible to give side which goes to the peripheral face of wafer 2 to the gas stream from outside blow-of-gas hole 2sb, and to regulate a horizontal position on a Yo Si positive target. In this example, disorder of a whirlpool etc. does not arise in a wafer peripheral face, but the relation between the position of each hole, a size, and spittle, etc. are decided so that the center position stable after the wafer had surfaced may be occupied. the [ the 3rd person figure thru/or ] -- the [ the 1st Beam figure in whichC / 3 / figure shows the 3rd example of the present invention thru/or ] -- it is the same drawing asC [ 1 ] figure, and in this example, it is different from the 1st example in that blow-of-gas hole 35 drilled in flat face 31 is formed in the eyebrows form, and there is no change in respect of others. according to this example -- the -- it is shown inC [ 3 ] figure -- as -- wafer 2 on flat face 31, Although it raises and rises to surface with the jet air from air jet hole 35 of an eyebrows form and there is as essentially [ that a horizontal position is regulated simultaneously ] as the 1st example no change, it is at this example, above -- a blow-of-gas hole -- a circular opening -- Communicating and others -- It was -- since it K becomes as [ form / since it is formed in the eyebrows form / like / the gas stream which Ueno's 1 surfacing operation is promoted and flows through the peripheral surface of a wafer / the mostly continuous cylindrical film ], the regulation operation of the horizontal position of a wafer is also promoted. However, the amount of consumption of compressed gas increases. in each above-mentioned example, although the structure with which the Stand top provided the Si spittle in the perimeter edge of the flat face of a table was explained, the account of the upper ranks next -- there may not be any Is. In this case, although the gas stream which blew off from the blow-of-gas hole produces the tendency diffused outside, it is possible to prevent Yo Si and the above-mentioned tendency to extract a jet gas stream and A lecture means, such as to gather the flow velocity. Although it explained that the shape of a blow-of-gas hole was circular about two kinds of eyebrows forms, of course, it is not restricted to this, and although pure air is usually used Ah Si and in the style of [ that are used ] compressed gas, it is also possible to use other gas suitably. (EFFECT OF THE INVENTION) According to the 1 present invention, the following effects are produced as explained above. (1) having provided two or more blow-of-gas holes on the circumference near the wafer perimeter -- Yo Si and a wafer -- the table top for positioning -- gas iK -- since it can make predetermined [ which therefore surfaced and was decided ] hold to 111, there is no possibility that the resist film under a wafer may be stained with a crack. (Since positioning of a wafer can be performed according to the jet gas stream by 10 compressed gas, the linkage mechanism etc. which were conventionally used for the device are simple for needlessness, Si, and structure, and can also reduce cost.) 011 Since dust will not ride on a table if gas is made to always blow off, a wafer can be made to hold in the clean state.

[Brief Description of the Drawings]

the -- the [ the top view in whichA / 1 / figure shows the 1st example of the present invention, and ] --B [ 1 ] figure -- the -- the I-I line sectional view ofA [ 1 ] figure, the -- the [ the sectional view in whichC / 6 / figure shows an operation state, the 2nd person figure, or ] -- the [C / 2 / figure and ] -- the [A / 3 / figure thru/or ] -- the [C / 3 / figure indicates the 2nd and 3rd examples of the present invention to be ] -- the [A / 1 / figure thru/or ] -- the [ the same drawing asC / 1 / figure, and ] --A [ 4 ] figure thru/or @40 figure are sectional views showing the important section top view and a different actuated position of a device conventionally. 2 --- Wafer 10.20, 30 --- Tape 2 and 11.21.31-m-flat face 12.22.32-11 spittle 13.23.33-11 gas chamber, 15.25.35 --- Blow-of-gas hole. the --A [ 1 ] figure the --C [ 1 ] figure the --A [ 2 ] figure the --A [ 3 ] figure