Continuous-length image sensor unit

[Detailed Description of the Invention]

[Industrial Application] The present invention relates to the long Imele sensor unit used in a facsimile, a digital copier, etc. [Description of the Prior Art] Conventionally, generally in image information processing units, such as a facsimile, 7' Jital copying machine, and a character reading device, it is known well that a photograph sensor will be used as a charge conversion element. In particular, in recent years, a photograph sensor is arranged to one dimension and a long photograph sensor array is formed, High sensitivity picture reading is performed using the long image sensor unit which combines the image formation array for making this, the light source array for reading manuscript lighting, and the manuscript Image on a photograph sensor array. Both sides r of the photoconductive layer which contains amorphous silicon (it is hereafter described as a-8 l.) etc. as a photograph sensor used in such picture reading (the sandwiched type and A call which form -one pair of electrode layers can also illustrate 1 Being done.) However, this photograph sensor makes a signal the primary photoelectric current which occurred in the photoconductive layer by incidence light, and since it is a Take Si put out method, a signal output is comparatively small [ a sensor ]. Since it is the composition that an electrode layer is located in both sides of a photoconductive layer, when a photoconductive layer has a pinhole at the time of manufacture, short-circuit generates this photograph sensor. Then, recent years The interval which constitutes at least one copy of a light sensing portion is provided in the same surface of the photoconductive layer containing a-9L etc., and the photograph sensor called the plena type which also forms one pair of electrodes is used increasingly. By making the secondary photoelectric current in the inside of a photoconductive layer into a signal, since this photograph sensor is a Take Si put out method, it has the advantage that a signal output is large compared with a sandwiched type photograph centimeter. By the way, a reaction is made for a plasma CVD method, a reactive sputtering method, the ion grating method, etc. to promote Ah Si and all as a manufacturing process of a-8i which constitutes such a Grenner type photograph sensor by glow discharge. However, for obtaining a-81 good film which has an optical high electric conduction rate in which case, comparatively low electric discharge electric power needs to perform film formation. However, adhesion nature with the substrate which a Yo Si profitable Was done photoconductive layer becomes from glass, ceramics, etc. was not enough for the film formation in such low electric discharge electric power, and when passing through photolithography 1 process at the time of subsequent electrode formation, etc., there was a problem of being easy to produce film peeling. Then, in order to prevent film peeling conventionally, after damaging a substrate face, the method of making a-81 deposit is adopted. that is, 7 Thu acid etc. should boil a substrate face chemically beforehand -- the To Si scratch was carried out [ K / Si who Etching(ed), or /, for example a brush etc., / physical ] -- it acts as Si. However, such a technique has a fault as shown below. (1) In using medicine, such as fluoric acid, it becomes that the device in a washing line is complicated, and a heavy price. (2) It is difficult to control the grade of unevenness of a substrate face. (3) It is easy to generate a microscopic defect at the time of the surface roughening of a substrate face, and since the characteristics of the *-8i film deposited on the microscopic defect differ, it is easy to generate the variation in the characteristic. Therefore, since the variation in each bit signal was large when it constitutes a long image sensor using the above photograph sensors, it had become necessity and a cause of Si and this a cost rise to attach the amendment circuit for variation amendment. [Objects of the Invention] The present invention raises the homogeneity of the characteristic of each photograph sensor in the long image sensor array using a Grenner type photograph sensor in view of the conventional technology like one or more, be absorbed -- be alike -- the variation in the signal between Many bits is reduced, and an amendment circuit is not needed -- it aims at providing the long image sensor of low cost. [Summary of the Invention] According to the present invention, the refractive index of the bottom of the heap of the lamination film is [ in / the object like the above consists of a lamination film more than two-layer / from which the photoconductive layer of each photograph sensor differs in a refractive index /, and / the light of the wavelength of 6328X ] 3.2 or less. Yo Si achievement is carried out at a long image sensor unit. [Example] The concrete example of the 1 present invention is described below. In these details ?, the bottom of the heap of the photoconductive layers may be called bottom Tipper layer of a-8i, and 1 on it or a plurality of layers may be called a-81 layers. Ah Si and Drawing 2 are the ■-■ sectional view with the fragmentary perspective view of a photograph sensor [ in / in Drawing 1 / one example of a present invention long picture image sensor unit ]. In a figure, 1 is a substrate. As for Ah Si and 3, Ah Si and these K Yo Si photoconductive layer are constituted from a-31 layers 2 by bottom Tipper layer of a-8t. 4 is an n+ layer which is an ohmic contact layer. In a common electrode, 5 is Ah Si and 6 is an individual electrode. as substrate 1 -- To 7059 by Corning, Inc., and Corning, Inc. make To 7740. Tokyo -- adaptation -- ceramics and others, such as glass, such as shrine SCG and silica glass, or partial glaze ceramics, can be used. A photoconductive layer consists of amorphous material which makes a-8 t the main ingredients, and bottom Tipper layer 2 of a-8i is 3.2 or less refractive index. Refractive indices are 3.2 Yo Si size, preferably a 3.4. grade a-8t layer 3. Yellow layer formation of the photoconductive layer is carried out at methods, such as a plasma CVD method, a reactive sputtering method, and the ion grating method, especially a plasma CVD method. In the photoconductive layer formed in this way, stress occurs for Take Si Included rare Hydrogen at the time of layer formation, and it is .. If this stress is too strong, adhesion nature with a substrate will deteriorate, and it is .. It becomes easy to produce film peeling. the size of the stress of a photoconductive layer is conditions at time of layer formation, for example, electric discharge electric power of glow discharge, substrate temperature, and material gas composed, and a feed gas pressure is set up suitably -- a thing k Good-bye trawl can be carried out. And adhesion nature with Yo Si board l- can be kept good for size to come comparatively, for example and form the small layer of stress for glow discharge with * electric discharge electric power, as bottom Tipper layer 2 of a-81 which adjoins substrate 1, as it is Nantucket. On the other hand, it turns out that a refractive index is also small if correlation with the refractive index of this layer is size and stress is generally small, and the stress of a photoconductive layer is ing. In order to make good the optical electric conduction rate of a photoconductive layer, K is understood that it is also required to perform glow discharge with comparatively low electric discharge electric power. Therefore, first comparatively big electric discharge electric power performs glow discharge on substrate 1, and a refractive index is comparatively small, For example, after forming bottom Tipper layer 2 of a-81 of 3.2 or less refractive index, comparatively small electric discharge electric power performs glow discharge, a refractive index is comparatively large, for example, it is preferred to form three in a-81 layers which have the with a refractive index of about 3.4 Takamitsu electric conduction rate. Common electrode 5 and individual electrode 6 consist of electric conduction films, such as At. The 1 present invention is explained to an example below at Yo Si details. Example 1: The usual washing was performed using the glass substrate ($7059 by Corning, Inc.) K neutral detergent of the double-sided grinding method, or organic alkali system detergent. Subsequently, it sets, after covering the glass substrate 1 with the mask of 9 turns of request A in a capacitive coupling type glow discharge decomposition device, and it is .. I X It maintained to 230 degreeC under the exhaust air vacuum of 10-6Torr. Subsequently, l Q SCCM carried out the In current inflow of the epitaxial grade pure SiH4 gas (made by a Komatsu electronic company) into the device, and it carried out a 0.07 Torr K setup of the gas pressure. Then, the high frequency power supply of 13.56 MHz is used, and they are input voltage 2.0 kV and RF. (Radio Frequency) electric discharge electric power 120W performed glow discharge for 2 minutes, and it formed bottom Tipper layer 2 of thicknessX[ about 400 ] a-81. Subsequently, input voltage is immediately dropped to Q and 3 kV, electric discharge electric power 8W performs glow discharge for 4.5 hours, three is formed in a-81 layers, about 0.8 micro thick, and it is 90. then -- using as materials the gas which mixed PH3 which carried out 100 ppm VC Diligence by S iH4 and H2 which were diluted with H2 to 10% by mixture ratio 1:10 -- electric discharge electric power 30W -- ohmic contact layer:r: -- a certain n+ layer (about 0.15micro in thickness) was made to deposit Next, At was made to deposit on 0.3micro thickness with electron beam evaporation method, and the electric conduction layer was formed. Then, after forming a photoresist pattern in desired shape using positive type photograph Resist (AZ-1370 by Shipley), The liquid (henceforth "etching solution Takumi") which mixed phosphoric acid (85 capacity Chi solution), nitric acid (60 capacity Chi solution), glacial acetic acid, and water by the capacity ratio of 16:1:2:1 removed the electric conduction layer of the exposed portion, and it formed common electrode 5 and individual electrode 6. subsequently, with the Gradama etching method using a parallel monotonous type device, CF4 performed dry etching by A by RF electric discharge electric power 120W and gas pressure 0.07 Torr, n+ layer of the exposed portion was removed, and n+ layer 4 of the request pattern was formed -- it ranked next one and made photoresist exfoliate On the other hand, it is fluoric acid (49 capacity Chi solution) about the surface of the same glass substrate as the above because of comparison, Nitric acid (60 capacity Chi solution) and acetic acid were processed for 30 seconds with liquid mixed by the capacity ratio of 1:5:40, and the Grenner type photograph sensor (it is hereafter called for short "the photograph sensor of a substrate acid treatment owner and bottom No living layer") was manufactured like the above-mentioned process except for not forming bottom Tipper layer of a-8t. When the photoelectric current value acquired about two kinds of photograph sensors above by making lambdamax=565nm light enter from the glass substrate 1 side on the same conditions was compared, the almost same value was acquired on both sides. be absorbed -- be alike -- it understands that Si - and existence of bottom Tipper layer 2 of a-8i in a present invention photograph sensor do not make the charge style characteristic deteriorate. Next, it turned out that film peeling does not occur but it has sufficient adhesion nature similarly about two kinds of or more 1 photograph sensors when durability test by a heat cycle is done on the same conditions. Example 2: it sets to the photograph sensor manufacturing process of the present invention image sensor unit of Example 1 -- * which performs the following combination Complex glow discharge for electric discharge electric power and electric discharge time in the case of formation of bottom Tipper layer 2 of a-8i -- except for things, the same process as Example 1 was performed. As a result, it is although the photograph sensor was able to be obtained, without producing film peeling in the case of electric discharge electric power 80W and 50W, Film peeling arose in the photograph ring Rafui 1 process (washing by an ultrasonic washing machine is included) of having used photoresist AZ-1370 in the case of electric discharge electric power 30W, 8W, and 4W, and it was not able to obtain the good photograph sensor made into the object. Example 3: After forming bottom Tipper layer 2 of a-81 similarly in Examples 1 and 2, substrate 1 was taken out, and the refractive index of bottom Tipper layer 2 of a-81 Formation(ed) on substrate 1 was measured. The relation between the electric discharge electric power of Goo- electric discharge and the refractive index of bottom Tipper layer 2 of a-8i is shown in Drawing 3. The adhesion nature of a substrate and a photoconductive layer is related to the electric discharge electric power of the glow discharge in film formation, and M is considered that he originates in the total stress by composition with the intrinsic stress induced depending on the internal structure of a thin film, and the internal stress depending on the difference of the thermal expansion coefficient with a substrate. Then, the total stress of bottom Tipper layer 2 of a-8t formed on the above-mentioned substrate 1 was measured. The relation between the electric discharge electric power of glow discharge and the total stress of bottom Tipper layer 2 of a-8t is shown in Drawing 4. As for stress, it is idea * To be that stress becomes small along with increase of 0 electric-discharge electric power with which stress becomes small with increase of electric discharge electric power although it appears as compression stress and electric discharge electric power shows the maximum near IOW as it is for generating the Boyd mu tension Si stress which mainly increases in a film, and offsetting compression stress. the above-mentioned connoisseur -- Si and the optical electric conduction rate of the photoconductive layer needed to deposit with regards to the electric discharge electric power in film formation with electric discharge electric power comparatively low in order to acquire the necessary optical electric conduction characteristic, and a-8i layer 3 in reed, therefore the above-mentioned Examples 1 and 2 is at comparatively low electric discharge electric power, and it deposited it. As mentioned above, it turns out that the effect of bottom Tipper layer 2 of a-81 of the photograph sensor of 1 present-invention image sensor unit having the operation as a stress relaxation layer at, and raising the adhesion nature of A, a substrate, and a photoconductive layer is demonstrated. in using it from the substrate 1 side in 0 phot of This sensor, irradiating with light, in order to acquire the good optical electric conduction characteristic -- the thickness of bottom Tipper layer 2 of a-8l. -- Sweetness Si -- the direction which is not thick is preferred, for example, it is desirable that it is less than 1000X. since the influence on the point Sense transformation characteristic by the optical absorption in bottom Tipper layer 2 of a-3i does not need to take into consideration when making light enter from the side substrate 1 and opposite to -- bottom Tipper layer 2 of a-8t -- kana Si -- it may be thick. Example 4: it sets to the photograph sensor manufacturing process of present invention image sensor uni-y of Example 1 -- after formation of a-3i layer 3, it was tired out on 80WK in electric discharge electric power, glow discharge was performed for 25 minutes, and the same process as Example 1 was performed except for forming 1 cm - 81 layers of More. Drawing 5 shows Ah Si and the same portion as Drawing 2 with the fragmentary sectional view of the Grenner type photograph sensor obtained in this way. In Drawing 5, the same numerals are given to the same member as Drawing 2, and Ah Si and 3' are a-8i layers. Since the formation speed of Ah Si and unit thickness this Si of this layer covered the expenses [ micro / 0.3 ] of electric discharge electric power, formation Speed Si of unit thickness ab of a-8i layer 3 of the thickness of a-8i layer 3' is also remarkably large. setting in a Yo Si profit Was done photograph sensor at this example -- bottom Tipper layer of a-81 2.a-8i layer 3 -- and be alike a-8i layer 31 -- the Si photoconductive layer is constituted. the photoelectric current which is acquired by the increase in film thickness of i-81 layers according to this example photograph sensor -- Yo Si of ' of Example 1 -- it is large. Example 5: In the present invention image sensor unit C+ photograph sensor manufacturing process of Example 1 Substrate temperature was maintained to 70 degreeC at the time of formation of bottom Tipper layer 2 of a-8t, and the same process as Example 1 was performed except for carrying out glow discharge for 15 minutes with electric discharge electric power 8W. It was 3.10, when bottom Tipper layer 2 of a-Sl was formed on the same conditions, the substrate top was taken out and refractive-index measurement of bottom Tipper layer 2 of a-Sl was performed. The photograph sensor obtained in this example was good like 7 Good-bye y To of present invention image sensor uni-Do obtained in Example 1. Example 6: In an example 10 present-invention image sensor unit No photo sensor manufacturing process, it is line Gee about the same process as Example 1 except for carrying out glow discharge for 10 minutes with electric discharge electric power 30W using SiH4 diluted with ■2 to 5 Chi as material gas at the time of formation of bottom Tipper layer 2 of a-8i. It was 3.02, when bottom Tipper layer 2 of a-31 was formed on the same conditions, the substrate was taken out and refractive-index measurement of bottom Tipper layer 2 of a-8t was performed. The photograph sensor obtained in this example was good like the photograph sensor of the present invention image sensor unit obtained in Example 1. Example 7: In the photograph sensor manufacturing process of an example 10 present-invention image sensor unit Gas pressure was set to 0.30 Torr at the time of formation of bottom Tipper layer 2 of a-8i, and the same process as Example 1 was performed except for carrying out glow discharge for 5 minutes with electric discharge electric power 50W. It was 3.12, when bottom Tipper layer 2 of a-81 was formed on the same conditions, the substrate was taken out, it pulled under a-8l. and refractive-index measurement of layer 2 was performed. The photograph sensor obtained in this example was good like the photograph sensor of the present invention image sensor unit obtained in Example 1. Example 8: By the same method as the case of present invention image sensor unit □ of Example 1, on the same substrate, 1c864 photograph sensors were arranged in in the shape of an array, and were manufactured. this sets up suitably the mask in the case of photograph ring Rafui 1 process -- Yo Si -- it can carry out easily. The outline part plan of the long photograph sensor array obtained in this way is shown in Drawing 6. Set to Drawing 6. In an individual electrode, 11 is Ah Si and 12 is a common electrode. The density of this long photograph sensor array has the length of Ah Si and the A 6th edition width by 8 A bit / Gourd. The homogeneity of the photoelectric current between the bits of the photograph sensor array obtained in this example and dark current , was measured. The result is shown in Drawing 7. On the other hand, the homogeneity of the photoelectric current between the bits of the long photograph sensor array which arranged to Yo Si at the method of the substrate acid treatment owner and bottom No living layer of example 1 statement, arranged 864 photograph sensors in in the shape of an array on the same substrate, and was manufactured for comparison, and dark current was measured. The result is shown in Drawing 8. Comparison with Drawing 7 and Drawing 8 does not have a microscopic defect on a substrate in Yo Si and a present invention photograph sensor. Since [ K ] bottom Tipper layer of a-8i is acting as a stress relaxation layer, it turns out that the homogeneity of the optical electric conduction characteristic is very good. Example 9: It tried to divide into the block of 27 for every 32 A bit the long photograph sensor array of 864 A bit which are obtained by example 81C Setting, and to carry out a matrix drive. Namely, after [ K ] manufacturing a long photograph sensor array by the same Engineering 8 as Example 8 After applying and carrying out bake of the polyimide resin (PIQ by Hitachi Chemical Co., Ltd.) to the whole surface, After forming a pattern in desired shape using negative type 7 Otresist (Tokyo adaptation shrine iJ!oMR-83), After polyimide resin Ettender liquid (PIQ etchant by Hitachi Chemical Co., Ltd.) removing PIQ of an unnecessary portion and exfoliating OMR-83, it was made to harden under a 1-hour nitrogen atmosphere by 300 degreeC, and the insulating layer and through hole for matrix wiring were made to form. The following K and electron beam evaporation method are made to deposit Yo Si At on 2micro thickness. The top electrode of matrix wiring was formed using positive type Foto Regis AZ-1370 and etching solution 1. The outline part plan of the matrix wiring section of the long photograph sensor array obtained in this way is shown in Drawing 9, and the X-X sectional view is shown in Drawing 10. in Drawings 9 and 10 -- 21 -- a substrate -- Ah Si and 22 -- bottom Tipper layer of a-8l. -- Ah Si and 23 -- an a-8i layer -- Ah Si and 24 -- much more -- Which Si and 25 -- a common electrode -- Ah Si and 26 -- as for Ah Si and 27, Ah Si and 29 are [ in an individual electrode ] the top electrodes of matrix wiring in a through hole Ah Si and 28 at an insulating layer. In Drawing 11 showing the drive circuit figure at the time of carrying out the matrix drive of the long photograph sensor array of 8 Pits 7wm and the A 6th edition width obtained in this way in Drawing 11, 31 shows the photoconductive layer of a photograph sensor and, as for 32, Ah Si and 34 are amplifiers with a common switch Ah Si and 33 in a block selection switch. The partial notch perspective view of the image sensor unit used in this example is shown in Drawing 12. Drawing 13 is the xm -xm sectional view. Set to a figure. 41 is a substrate of a photograph sensor array. fiber lens array 42 is provided under the substrate 41 -- light emitting diode (LED) array 43 is provided in Si and its both sides. 44 is connected to upsilon electricity target by drive IC at electric conduction material 45 with Ah Si and the as flexible IC44 as the matrix wiring section on substrate 41. 46 is a reading manuscript and 47 is the Sending roller. In a radiating fin, 48 is a bubble and 49 is a heat sink. Drive IC is thermally connected with heat sink 49. As for the photograph sensor array, fiber lens array 42, and LED array 43, the arrangement direction is parallel mutually. The homogeneity of the output photoelectric current between the bits after 100micro of voltage impression sea at the time of carrying out the matrix drive of the image sensor unit as mentioned above was measured. The result is shown in Drawing 14. As Drawing 14 shows, the output photoelectric current of each pit shows very good homogeneity, and it understands it that signal read-out is sufficiently possible by matrix drive. Example 10: The long image sensor unit was constituted using the photograph sensor array obtained in Example 9. Drawing 15 is the circuit diagram. In the figure, photograph sensor E1~E9 constitutes 1 block from three pieces, and it constitutes the photograph sensor array from 3 blocks. Capacitor C1~C9 which corresponds to photograph sensor E1~E9 respectively, and switching transistor T1~T9 are the same. One electrode (common electrode) of each photograph sensor E1~E9 is connected to power supply 101, it is carried out and the electrode (individual electrode) of another side is respectively grounded via capacitor Cl-C9. The individual electrode which has the same turn within each block of photograph sensor E1~E9 is respectively connected to one of the common lines 102~104 via 1~T9 by the switching transistor. If it says in detail, it will be 1st switching transistor TI of each block, The 2nd switching transistor T2, T5, and T8 of 1 each block is connected to common line 102, and common line 103, the 3rd switching transistor T3 of each block, and T6.T9 are connected to common line 104 for T4 and T7, respectively. Common line 102~104 is respectively connected to amplifier 105 via switching transistor TIO~T12. It is connected in common for every block, and the dirt electrode of switching transistor T1~T9 is connected to the parallel output terminal of shift register 106, respectively. Because J A [ primary ] 1 Ileppel is outputted from the parallel output terminal of shift register 106 to predetermined timing, - from which switching transistor T1~T9 will be in an ON state one by one for every block -- again Each dirt electrode of switching transistor TIO~T12 is connected to the parallel output terminal of shift register 107, it is that No Level is outputted from this parallel output terminal one by one to predetermined timing, and switching transistor TIO~TI2 will be in an ON state one by one. The terminal connected [ of switching transistor TIO~T12 ] is grounded via switching transistor T13 for electric discharge, and r-electrode of switching transistor T13 is connected to terminal 108. The operation of the conventional image reader which has such composition is explained briefly. If light enters into photograph sensor E1~E9, according to the intensity, an electric charge will be accumulated in capacitor C1~C9 from power supply 101. Then, although - sequential high level is outputted from shift registers 106 and 107 to each timing, suppose that high level was outputted from the 1st parallel output terminal of both registers now. Then, switching transistors TIO connected to switching transistor T1~T3 of the 1st block and common line 102 are an ON state and Si. The electric charge accumulated in capacitor CI passes along switching transistor TI, common line 102., and switching transistor TIO, inputs into amplifier 105, and is outputted as 1 picture information. If the electric charge accumulated in capacitor C1 is read, high level is impressed to terminal 108 and switching transistor T13 will be in an ON state. The remains electric charge of capacitor CI is completely discharged by this through switching transistor TI, common line 102, switching transistor T10., and switching transistor T13. Then, making high-level the 1st parallel output of shift register 106, shift register 107 is shifted one by one, and switching transistor Tll and T12 are changed into an ON state at order. This information which is K Caused, performs above-mentioned read-out and electric discharge operation about capacitors C2 and C3, and is accumulated in them is read one by one. In this way, after read-out of block [ 1st ] information is completed, shift register 106 is shifted one by one, and the 2nd and block [ 3rd ] information are read like the above. Thus, the information accumulated in capacitor C1~C9 is read serially, and is outputted as picture information from amplifier 105. Since the image reader shown in Drawing 15 has a capacitor for electric charge accumulation, it can enlarge an output signal. When photograph sensor E1~E9% capacitor 01~C9 and switching transistor T1~T9 are formed on the same board with a thin film semiconductor, it has an advantage of being able to lessen the number of connecting points with an external circuit. Example 11: The image reader was constituted using the photograph sensor array of the present invention obtained in Example 9. Drawing 16 is the circuit diagram. However, in this example, since the composition of photograph sensor E1~E9 * capacitor 01~C9, switch transistor T1~TI2%, and shift register 106.107 grade is the same as that of what is shown in Drawing 15, the explanation is omitted. In Drawing 16, the individual electrode of photograph sensor E1~E9 is respectively grounded via switching transistor STI~ST9. Namely, each of switching transistor STI~ST9 is connected in parallel with capacitor 01~C9. Like the dirt electrode of switching transistor T1~T9, common connection of the dirt electrode of switching transistor STI~ST9 is made for every block, and it is connected to the parallel output terminal of shift register 201 for every block. Therefore, switching transistor T1~T9 will be in an ON state for every pro and Ri by the shift timing of shift register 201. Next, operation of this example which has such composition is explained using the timing chart of switching transistor 'ri~T12 and STI~ST9 shown in Drawing 17. First, if light enters into photograph sensor E1~E9, according to the intensity, an electric charge will be accumulated in capacitor C1~C9 from power supply 101. And high level is first outputted from the 1st parallel terminal of shift register 106, and switching transistor TI-T3 will be in an ON state [Drawing 17 (a)]. Between them, shift register 107 shifts and switching transistor TIO~T12 will be in an ON state one by one [Drawing (d) 17 ~ (f)]. That is, the optical information accumulated in block [ 1st ] capacitor 01~C3 is read one by one. If the information on capacitor C3 of the block [ 1st ] last is read, shift register 106 shifts, Noirepel is outputted from the 2nd parallel terminal, and switching transistor T4~T6 will be in an ON state [Drawing 17 (b)]. High level is outputted from the 1st parallel terminal of shift register 201, and, simultaneously with it, an ON state, Si, and the remains electric charge of capacitor C1~C3 are completely discharged for switching transistor STI~ST3 [Drawing 17 (g)]. While switching transistor T4~T6 is in an ON state in parallel to this electric discharge operation, The optical information by which Yo Si and switching transistor TIO~T12 are accumulated one by one in an ON state, Si, and block [ 2nd ] capacitor C4~C6 is read to the shift of shift register 107 one by one [Drawing (d) 17 ~ (f)]. Next, in parallel to block [ 3rd ] % read-out operation [figure (C) 17 ], A and block [ 2nd ] electric discharge of capacitor C4~C6 are performed. [Drawing 17 (h) and the above operation are repeated for every block. Thus, the capacitor of the block which read-out ended can be made to be able to discharge in parallel to the next pro and read-out of Ri, and operating time can be shortened as a whole. Drawing 18 is what showed other examples of the 1 present invention, and only A portions in Drawing 16 differ. That is, amplifier 202~204 is respectively connected to common line 102~104, and she is Ann! Each output of 202~204 is connected to the parallel input terminal of shift register 205. And picture information is serially outputted from the in-series output terminal of shift register 205. Therefore, in this composition, the information for 1 block inputs into shift register 205 simultaneously, then serial picture information is outputted by the shift of shift register 205. Also in this example, when the information for 1 block is outputted from shift register 205, electric discharge of the capacitor of the block and read-out of the primary block can be performed in parallel. % thin film transistor may be used for switching transistor STI~ST9 like 9 by switching transistor Tl~, and it is in that case. It can form in the same substrate as other elements. Since electric discharge of the capacitor of a certain block and read-out of the next block can be performed in parallel even if it uses a thin film transistor for switching transistor STI~ST9, the whole read-out time is shortened compared with the device of Example 10. [Effect of the Invention] According to the long image sensor unit of the present invention like the above, cost reduction becomes possible, without using an amendment circuit, since the characteristic of a photograph sensor can be equalized.

[Brief Description of the Drawings]

Drawing 2 of Ah Si of Drawing 1 is the ■-■ sectional view in the part plan of the photograph sensor of a present invention image sensor unit. Drawings 3 and 4 are graphs which show the characteristic of lower Tipper layer. Drawing 5 is a graph seven Ah 2 and J2J:Samurai [ A 1.sigma A 2. A ] 7 A, Yu, Oh y 1-% Z Ah Si, and Drawings 7 and 8 indicate the characteristic of the photoelectric current and llf current to be with the fragmentary sectional view of the photograph sensor of a present invention image sensor unit. In the part plan of a matrix wiring section, Drawing 9 is Ah Si and Drawing 10 is the X-X sectional view. Drawing 11 is a matrix drive circuit figure. With the partial notch perspective view of a long image sensor unit, Drawing 12 is Ah and Drawing 13 is the Xm-xIIf sectional view. Drawing 14 is a graph of output photoelectric current. It is a figure in which Drawings 15 and 16 show Ah Si with the circuit diagram of a long image sensor unit, Drawing 171 shows Ah Si by a timing chart, and Drawing 18 shows the example of partial metamorphosis of Drawing 16. 1: Substrate + 2 : Bottom Tipper layer of a-8i, 3 : An a-8i layer, a 4:n+ layer, 5: A common electrode, 6: An individual electrode, 41 Near sensor array substrate, 42: A fiber lens array, 43 : An LED array, 44: Drive IC. 46: Reading manuscript. Drawing 1 The 2nd Gang Drawing 3 ReleaseV: Electric power (W) Drawing 5 Drawing 6 Drawing 7 Bi * Tot Drawing 7 Drawing 10 2 z6 Drawing 11 Drawing 12 Drawing 13 Drawing 17 Drawing 18