Josephine memory device having semi-symmetric cell structure

[Detailed Description of the Invention]

(Field of the Invention) The present invention relates to the composition of memory storage - which used the Di rice field Sefun device, and the storage cell matrix which memorizes especially information. (Conventional technology and its problem) The circuit of the method which reads destructively memory information which is indicated to Showa 5l. of publications-of-patent-applications-113544 (reference literature 1) as a memory circuit using a Josephoon device until now, The circuit (a NDRO method is called below) of the method which reads nondestructively memory information which is indicated to publication of patent applications Showa 53-120341 (reference literature 2) or Showa 54-73530 (reference literature 3) is known. Usually, such memory storage arranges with all the the storage cell shape of a basic matrix, and is constituted. The groove bottom in which this storage cell ? arrangement established the same circuit in the same shape in] Article, and %. However, in the actual device, it was difficult to repeat and arrange the cell of the - shape from the restrictions on the structure of a lower electrode, a joined part, a top electrode, and control Jimisephus / all the device lines for making it switch. for this reason, the former -- IEEE journal OP solid-state circuit 5th -- the 794th page (reference literature 1 : IEEE Joural of 5olid-8tate C1rcuits.) of the 5 C-14 No. Vol, 5C-14#j, 5. PP, 7?4-796, Oct. 1979 Henkel KGaA (W, H.) etc. which are indicated The Ma IJ wax Formation which has arranged the storage cell invented by Henkelg to the symmetric figure was used. basic structure Gold indication of four cells from which Drawing 1 constitutes this storage cell matrix -- it carries out. Four storage cells comprise a Josephson device, write-in gate 11~14 using the quantum interferometer which comprises inductance, reading Shigate 21~24 using the quantum interferometer which similarly comprises a Josephson device and inductance, and memory loop 31~34. Each storage cell is arranged so that it may become symmetrical to the X-axis and the Y-axis as shown in the figure. the Josephson memory storage of the conventional NDRO method repeats and arranges four cells of Drawing 1 in the same shape -- composition -- t It was. Therefore, composition C of this storage cell matrix The X-rays (X, -X, l X, and -X2) as a word selection line which perform word selection for choosing a cell, and each word selection line of Y line (Yr-YI, Yz-Y2), Redraw D#jl' was always used with Necessity from the necessity of uniting the direction of a Mud current signal with D line (DI -DI+D2- D2) as a digit line which writes in at the time of writing, gives Taegu, and performs word selection at reading 9:00, and S line (S+-8+-82-82) as a sense line which reads the written-in information. For this reason, only the time when a signal is transmitted in TL style double Signaling top Si Over and the Redraw Si line portion which are given to each line became late, and made operating time of memory storage late. Since the field for carrying out return Line full arrangement is needed, M Construction of memory storage is complicated, and they are the miniaturization of a device, and high integration t. - It was restraining. also in that of Friend lines made legible, in Drawing 1, a When Si line shows a figure -- as for that of each line, a When Si line is arranged for There in fact, respectively. In the conventional memory storage, the circuit method which removes a Redraw rho line, and grounds a far edge, and it drives from Near end was not able to be taken. That is, since it will be necessary to arrange the drive circuit of positive/negative by turns as a drive circuit since the directions of current passed on each line differ for every Vk Contact cell when a Redraw Si line is removed, and circuit composition became it is remarkable and complicated, composition was very difficult. Conventionally, a circuit of the magnetic coupling form which is indicated in literature 4 was used as a drive circuit which drives each word selection line. Since it is connected to each other, a cross talk arises on the switch of a drive circuit at Yo Si and an adjoining word selection line, and the drive circuit of this method is Narrow comb Had been about the field of a write-in gate of operation. (The object of an invention) The above-mentioned fault is made to remove, it is integrated highly, and the object of the present invention is to provide the Josephson memory storage with the half-symmetrical cell structure of operating at high speed. The another object makes possible the far-end all grounded drive system, and there is in aiming at expansion of much more shortening of operating time, and a field of operation. (Constitution of an invention) According to the present invention, they are a word selection line of word selection all To do 1, and the 2nd Word selection line at least, The digit line which writes in at the time of writing, gives information, and performs word selection at the time of reading Si, and the memory measure holding information, The sense line which reads the written-in information, and the writing means for writing information in the above-mentioned memory measure, In the Josephson memory storage constituted by carrying out ° plurality arrangement of the storage cell including a reading Si means to output the memory information on the word position chosen as the above-mentioned sense line, the 1st above-mentioned word selection line portion is arranged so that it may become symmetrical mutually about a Removal storage cell, and it is front].

Every other cell turns up the 1st word selection line, and arrangement and the Josephson memory storage with the half-symmetrical cell structure by which it is all the Was it characterized are obtained. (Detailed explanation of composition) the present invention takes above-mentioned composition -- the problem of Yo Si and conventional technology -- all -- it solved. Drawing 2 shows the composition of half-symmetrical cell structure Have money 4 cell as a desirable example of the present invention. The storage cell matrix of the memory storage by the present invention is repeatedly Composed of(ed) [ on the basis of four cells of Drawing 2 ] on arrangement in the direction in every direction in the same shape. write-in gate 111~ -- writing in at the time of 114. reading Shigate 121~124. memory loop 131~134 * writing, and giving data sm as D line as a digit line which performs word selection at the time of reading Si, and a sense line which reads the information on a memory loop is symmetrically arranged to the X-axis and the Y-axis like the conventional example shown in Drawing 1. Although Y line which is the 2nd word selection line that performs word selection at the time of writing is symmetrically arranged about the X-axis and the Y-axis like a conventional example, a Redraw Si line is removed and the side a drive circuit and opposite to, i.e., a far edge, is grounded. In the former, different Si, and all the memory matrices, the current of Y line is sent in the direction of the other side from a top to the bottom in the same direction, for example, Drawing 2. it line p [ word selection all ] obtains at the time of writing, and, as for every other cell, the X-rays which are the 1st word selection line are turned up and arranged. The X-rays which write-in gate 112.113 switch all controls by Drawing 2 are Beautiful by return. In the present invention, basis bi of X-rays is removed and the far edge of X-rays is grounded like Y line. As for flowing back of X-rays, each line is altogether passed [ in Drawing 2 ] from the left in the same direction on the right. therefore, each writing -- it is good -- ' current of x7 and Y line which controls the switch of 111~114 is added in the same direction, the write-in gate of the word of the intersection of a memory matrix through which both flowing back of X-rays and Y line flows switches it alternatively, and the information on D line is written in. At this time, since the relation between the direction of current of D line and the direction of current of X-rays and Y line does not have directivity to the direction of current of the X-rays whose characteristic spread, it is and is control current and Y line which write-in Gout 111~114 switches, it does not pose a problem. That is, it has the same threshold to the current of the positive/negative of X and Y line. On the other hand, about the circulation current relation in S line in reading gate 121~124, and memory loop 131~134, since Reputation changes in that of a reading gate depending on the direction of circulation current, coincidence with the direction of current of S line of circulation current is aimed at. That is, in each reading Sigt, current is sent by S line and D line so that it may become the same, as the relation of the direction of current of Sa and D line is shown in Drawing 2. Although a return line is in D line and S line by Hakama, in order to make a figure legible, in Drawing 2, it conflicts, a line is omitted and it is an example. (EXAMPLE) Drawing 3 shows the outline of the composition of the memory storage which carried out the present invention with a block diagram. Half-symmetrical cell structure by the present invention? Joseph Non memory storage which it has, it was shown in Drawing 2 -- half--- symmetrical memory matrix 291 which carried out basic 4 cell all arrangement [ repetition ], and was constituted, With YD decoder 203 which 202t'' decoding of is done and Y line and D line selection signal all generate, an address signal is a part, Y line, drive circuit 204 of D#Ii, and portion 205 of Remaining Si of an address signal, It comprises XS drive circuit 207 in which Xm and S line carry out selection (XS decoder [ which generates 7ff item ] 206, and X-rays and S drop ! all A copy (*)) assistant, and reading signal all sense circuit 208 which joins together and sends out an output signal to terminal 211. It is inputted from terminal 212 and write-in data is all the data To prepare to D line drive circuit 204. The signal which specifies reading or writing is inputted from terminal 213, and controls the drive circuit of each line. Although this example does not show all the memory storage control lines to control, it is addition type To be by Must 47. The resistance Yuzheng Penghi circuit etc. where the X-rays which drive the word selection line of far-end grounding by the present invention as a feature of the present invention, Y line drive circuit Th, and the b4.zos operate independently respectively are used. Therefore, since it is mutually detached by [between each Word line, it becomes as [ produce / in the drive circuit of a magnetic coupling form used conventionally ], a loss talk is removed, and a write-in gate makes it of operation field all expand. (EFFECT OF THE INVENTION) Half-symmetrical cell structure Gold with gold eye Cefson memory storage according [ the above ] to the present invention, In the structure of four cells used as the foundations which carry out storage cell Matrixke composition, it is considered as an asymmetrical structure which has turned up and arranged the 1st Word selection for every cell, and the having [ symmetrically / Placement ° Was done structure and that of each Word line ]-except for 1st word selection line-structure except When # line 't-feature. Therefore, what has arranged multiple memory matrices which have such a structure in addition to the above-mentioned example on 1 A tip can be considered as other examples. The object for Temple of the drive system of Yo Si and far-end grounding can be carried out to that of the X-rays which are each word selection line, and Y line removing a When Si line, reduction of Sieve speed-izing of the standup of driving current and the cross talks between word selection lines is aimed at, and high-speed memory storage is obtained. Since each word selection line can be driven in the drive circuit of the polarity even if there is no Redraw bs, the miniaturization of a device with an easy drive circuit can be achieved. As mentioned above, small memory storage is obtained by carrying out the present invention by Yo Si Deliberate. In;:$1 figure, conventional account 1. is symmetric figure memory Selma Ding:i> of a device, i) four cells which show the basic structure of four cells which constitute A and from which a sense thing and Drawing 2 constitute the cell matrix of the memory storage by the present invention -- half--- what showed a symmetrical cell structure, and Drawing 3 show the composition of the memory storage which carried out un-inventing. 11~14,111~114 and a write-in gate, and 21~24.121~124 .. To be unable to read gate, 31~34.131~134 ... A memory loop, 201 .. Account 1 mind Selmaddox, $202 ... An address signal, 203 -.. YD decoder, 204 .. YD Le 1 dynamic circuit, 206 ... XS decoder, 207 ... XS drive circuit, 208 and a sense circuit, and 211 ... It reads (i item output terminal, 2] 2 ... [ A data signal input terminal, 213 ] ... reading Si write-in specification signal input terminal). Applicant-for-a-patent 1 Force, v;4 Relation, the m r Yajima shield Y-axis for A