Formation of bump

[Detailed Description of the Invention]

It carries out and is technical field]. The present invention relates to vamp formation art and the formation art of the hump electrode especially for flip chip bonding.

[Background of the Invention] What is set to one of the formation methods of vamp TaFis for flip chip bonding, and is depended on mask vapor deposition in - can be considered. However, in this case, multilayer vapor deposition of the metal layers, such as chromium (Cr), copper (Cu), and gold (Au), must be carried out, for example, and cost also has many [ fairly / a man day ] problems, such as becoming high, in this top. Although how to form a hump using plating is also considered, there is the same problem as what is depended on the vapor-depositing method.

[Objects of the Invention] The object of the present invention is to provide the bump formation method which can form a hump electrode easily by a small man day. Other objects of the present invention are to provide the bump formation method which can form a hump electrode at low cost. Other objects of the present invention are to provide the bump formation method which can realize communalization of Vered of a flip chip and wirebonding. The above of the present invention, and the other objects and the new feature will become clear from description and the accompanying drawing of this specification.

[Summary of the Invention] It will be as follows if the outline of a typical thing is briefly explained among the inventions indicated in book 191. That is, a hump electrode is formed by wirebonding and the above-mentioned object is achieved.

[Example 1] Drawing 1 (al~ (it is a fragmentary sectional view showing ~ example of the bump formation method by C1 The present invention.)) This example forms a hump using the wirebonding art called what is called nail head bonding. That is, in this example, nail head Vonda's capillary 1 is used and a bamboo electrode is formed on bonding band 3 of semiconductor Pereno l~2. Therefore, it is Drawing 1 (as shown in al, on torch 4, it Addition, the tip of bonding wire 5 projected from the lower end of capillary l is heated, and ball 5a for bonding is formed.) first. Next, as shown in 1st [ The ] figure fly, capillary 1 is dropped and ball 5a is bonded by thermo-compression on vamp 4 of Ponding wire 3. Then, as shown in 1st [ The ] figure FC, wire 5 which carried out bonding of the hole 5a of a lower end to bonding band 3 is torn off immediately above ball 5a of a lower end by movement of a clamping circuit (not shown), etc. Thereby, on bonding band 3 of pellet 2, hump electrode 6 formed of wirebonding is left behind. Thus, easy moreover in this Example 1, good A \ Ump electrodes 6 are a small man day and low cost by using - throat bonding for Neil (M To be.). As a material of wire 5, it is aluminum (Hitoshi Handa's besides A.I. Artificial Intelligence], copper (Cu), and gold (Au) various materials can be used.).

[Example 2] Drawing 2 (al~ (C1 is a fragmentary sectional view showing each process in Example 2 of the bump formation method by the present invention one by one.)) In this example, the hump electrode for flip chip bonding is formed using ultrasonic-wire-bonding art. Namely, Bondin guar inserted in the lower part of -nu Esoji 7 of ultrasonic wire Bonder in this example E 1]5 is joined to bonding band 3 by wirebonding using the wedge 7. First, as shown in 2nd [ The ] figure 611, wedge 7 which made the tip of bonding wire 5 project slightly from a lower end is positioned above bonding band 2 of pellet 2. Next, Drawing 2 (like bl, wedge 7 is dropped, the tip part of Y 1~5 is pushed on bonding puff l:3 by wedge 7, and ~ wire phone Ding of the ultrasonic oscillation from an oscillation child (not shown) is transmitted and carried out via A 4 Over and the sea urchin Noji 7.) Then, on bonding band 3, hump electrode 6a by an ultrasonic method is formed by tearing off the tip part of wire 5 by which ultrasonic bonding was carried out on bonding band 3 by movement of a clamping circuit (not shown), etc. like 2nd [ The ] figure 611. As a material of wire 5, A.I. Artificial Intelligence, Au, Cu, and Hitoshi Handa can be used also in this case. It carries out and is effect Co. Since a hump electrode is formed by (1) and wirebonding, it is few in a man day (it can carry out.). (2) and a bamboo electrode can be formed at low cost. Communalization of the pellet of (3), a flip chip, and wirebonding is realizable. Although the invention made by this artificer above was concretely explained based on the example, it cannot be overemphasized that the present invention can be variously changed in the range which is not carried out and as for which example G Limited does not deviate [ above-mentioned ] from the gist. For example, things other than the above can be used as a material of a bamboo electrode.

[Brief Description of the Drawings]

The fragmentary sectional view, Drawing 2 ta+~ (C1 is a fragmentary sectional view showing each process of Example 2 of the method of the present invention one by one.) which show each process in Example 1 of the hump formation method according [ 1st / The / figure [a~Ic ] to the present invention one by one ■ ... the capillary of Neil 7 Tobogong, and 2- - semiconductor pellet and 3 ... bonding Banodo and 4 ... 1 and - Chi, and 5 ... a phon Tapping wire and 5a ... a ball, and 6 and 6a ... a hump electrode and 7 -- an ultrasonic phon -- a good sea urchin and Di. Representative Patent attorney Akio Takahashi 1, and the 3 * 1st A (theta-A (j) A fork (alpha) (Your)) (O (O