Manufacture of semiconductor device

[Detailed Description of the Invention]

The present invention is aluminum and C A to the surface of the electrode wiring made into the aluminum (At) f main ingredients of a semiconductor device. fly (Ti), V, ev, nickel, Zr, Nb, Mo, Pd. They are Forming edges, unreacted titanium or ■, and e Ma about a compound. nickel, Ti, Zr, Nb, Mo, Pd, Hf, Ta, W, Pi. It is about to removal T Production method alternatively about the layer which makes etc the main ingredients. Aj is conventionally used widely as an electrode wiring layer of a semiconductor device. however, At thin upbringing has the character which the heat treatment Nyorich Oy person (hillock) of 300 thru/or 500C generates, and the size and height may amount to several micrometers. When the film which consists of phosphorus silicic acid Ge A (it is called below Phospho-8i 11-cate Glass s PEG), for example is formed as an electrode wiring layer top Hot summer-film, O which brings a result which spoils the function as a Exercise film since P2O performs local unusual growth focusing on a body hillock, Kurumo intensity is weak and this unusual growing region tends to produce tortoise l&! -- again When considering it as the multilevel interconnection structure of making wiring crossing via IIPsG, there is a serious problem that the insulation between an upper wire and lower layer wiring becomes imperfect in the hillock part. Metal layer table r which makes aluminum the main ingredients as a prevention method of the hillock which arises by heat treatment of the above-mentioned At# film It is a field An A4-Ti system or At-V, aluminum-f 2v, and kl-nickel A4-Zr, At-Nb, At-MO, kl-Pd, and At-Hf. aluminum-T a, At -W, and A4-P -- a system -- covering with an alloy or an intermetallic compound layer is already known. That is, this method forms the metal layer which makes Ti or the above-mentioned metal the main ingredients on Kinban dove which makes At the main ingredients, It is the method of removing the metal layer which heat-treats, is made forming the alloy, the above-mentioned alloy, or intermetallic compound (for example, TiA4) of A4-T1 grade near the interface of both metal layers, and strokes unreacted Ti or the above-mentioned metal by Main character after an appropriate time. A method known conventionally [ aiming at removing alternatively the metal layer which makes unreacted TI the main ingredients in the above-mentioned hillock preventive means ], Ethylene sialon 4 acetic acid NH, 0 H-H, Q, -H, the etching solution of A, or fluoric acid (HF): It is the wet etching by the mixed-solution of nitric acid (HNO)-1:20 (volume ratio). Although this etching aims at not invading the above-mentioned alloy or an intermetallic compound, and AzSly, but removing T1, It has left the problem are very sensitive to the concentration of an etching solution, and producing unevenness in the end face of the electrode circuit pattern formed from permeation zeta This of an etching solution, and not easy to control. [ of the result of etching ] The end face of the present invention of the electrode circuit pattern over the metal layer which makes above-mentioned unreacted TI the main ingredients formed is sharp, and it depends with the object. (The dry etching, for example, Goods!, by the etchant to which the object of describing the present invention above makes it the main ingredients, the full Olcrole substitution object (OF4), for example, carbon tetrafluoride, of hydrocarbon! With reference to drawings, concrete Sorrow explanation of the oral plate Shimomoto invention attained by etching is given from example arrival This.) Drawings 1 thru/or 4 are sectional views showing the example of the present invention. In Drawing 1, 1 is a Si substrate, it is formed in arbitrary semiconductor devices and the main ingredients and T Electrode circuit pattern 3 are formed in At via 2 oxidization silicon (Sin) film 2 alternatively provided on it. all the surfaces of this substrate, i.e., 1, very -- all the circuit pattern 3, S i O, and application side top of film 2 -- Drawing 2 -- ShowT -- 11 layer 4 of like and 1100n of Jv Rooted is formed by the vapor-depositing method or the sputtering method. Subsequently, reducing atmosphere of Warm L400c thru/or 450C, for example, hydrogen gas, or mixed atmosphere of hydrogen dregs and argon, Or into inactive gas, for example, argon atmosphere, or a vacuum, heat treatment for several 10 minutes is performed, and thin #5 of At-Ti alloy or an intermetallic compound is formed in the interface of 'flL Polar alignment Tsukutan 3 and the TI layer 4 which make At the main ingredients as shown in Drawing 3. Dry etching which makes the full Olcrole substitution object of hydrocarbon etchant after an appropriate time is carried out, and the electrode circuit pattern of the state which the unreacted TI layer 4 is removed alternatively and shows in Drawing 4 is acquired. By a barrel type plasma etching technique, using OF4 as etchant, this example-Roughly sets the pressure to 0.1 thru/or 0.5Torr, and impresses the electric power of 13.56 MHz, and 200 thru/or 300W, Unreacted Ti layer 4 was removed within 2 minutes, and electrode circuit pattern 3 -ed wax(ed) by A4-Ti thin layer 5 in the surface was acquired. In this example, to etching great Is Ti50nm and 4- grade, 810. of below 5 n m / A story is also the latter and the degree of said @ again, and an AA-Ti thin layer has sufficient selectivity. The rate of the fluoride of carbonization water Í is able not to be restricted to OF4 of this example and to use as etchant, the full Olcrole substitution object which is mainly concerned with the comparatively more large fluoride of chlorine. As an etching method, plasma Eraching method tC does not restrict [ above-mentioned ], but Riantipus grasshopper etching method vigor also gives an equivalent effect. As the second metal layer that carries out the stock of the metal layer table ifi which makes A4 the main ingredients, for example, Ti and a Ti-W alloy may be used -- temperature 300C thru/or about [ 500C ] heat treatment l This -- between At, an alloy, or a gold layer Form a figure compound. And V, Or and nickel ' With the effect which deters hillock generating of kl, Zr, Nb, Mo, Pd Hf, Ta, W, Pi, etc. may be used. It is a layer which makes the main ingredients Ti or the other above-mentioned metal in the thin present invention on the layer which makes kl(s), such as a Electric cooker circuit pattern, the main ingredients as explained above by after-formation Hot rod near the interface (make the thin layer which consists of This At-Ti, other alloys, or an intermetallic compound form) of both layers. A layer which makes unreacted TI and other metal appropriate Without with the main ingredients is removed. Therefore, in the method of preventing the hillock which arises by heat treatment of At thin film, A method of saving a thin layer which consists of kt-TI, other alloys, or an intermetallic compound, and removing Ti and other unreacted metal alternatively is given, and it is Ah, making it possible A and to carry out for The and an exact and sharp pattern certainly -- one semiconductor device, especially a detailed pattern, -- reliability improvement arrival This of owner T Semiconductor device -- it has a large effect.

[Brief Description of the Drawings]

Tuna 1 figure thru/or Tangle 4 figure are sections which show the example of the present invention. In a figure, 8J substrate and 2 show an 810.j1113 electrode circuit pattern, 4 shows Ti layer, and 1 shows an At-Ti layer 5.