JPS5819081A

High density charge coupled element pickup array

Abstract

(57) [Abstract] Since this gazette is application data in front of an electronic application, the data of an abstract is not recorded.

Term

Term ended

Projected expiry passed 13 July 2002, 24.2 years ago.

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4 claims: 4 independent, 0 dependent

  1. 1
    [Claim(s)] 【特許請求の範囲】 (1) 1個の集積回路デツプ十に形成され、印加された光情報を検出する第1列の光検知器く90)と、前記第1列の光検知器に平行であって前記第1列の光検知器とは分離して前記集積回路チップ上に形成された第2列の光検知器(94)とを含み、前記第2列の光検知器(94)は前記第1列の個々の光検知器の約半分の長さだり前記第1列の光検知器からずれており、それによって前記第1列の光検知器にお(プる光検知器の中間に印加された光情報を前記第2列の光検知器が検出し、前記第1列と第2列の光検知器は2個の線形光検知器アレイから成ることを特徴どする。1個の集積回路チップ上に形成された高密度電荷結合素子Wi像デアレイ (1) Photodetector 90 of the 1st row which is formed in one integrated circuit Detep 10, and detects impressed optical information, and The which were parallel to said light detector of the 1st row, separated said light detector of the 1st row and was formed on said integrated circuit chip
  2. 2
    (2) 1個の集結回路デツプ上に形成され、印加された光情報に応じて電荷を前記ブツブの基板-1-A^り 内に発生させることににリデータピットの形で1走査行の前記印加された光情報を検出する第1列の光検知器(90)と、前記同じ集結回路チップ-にに形成され、前記第1列の光検知器〈90〉と平行であって前記第1列の光検知器(90)から約1走査行分だ(プ離れている第2列の光検知器(94)とを含み、前記第2列の光検知器(94)は前記第1列の光検知器の中心間の中間に来るJ:うに前記第1の列の光検知器(90)からずれており、それによって前記第1列の光検知器の中間点に印加された光情報に応じて電荷を前記チップの基板内に発生させることによりデータビットの形で1走査行の前記印加された光情報を検出し、前記第1列と第2列の光検知器は2個の線形光検知器アレイから成り、ラスク走査方式で同じ行の情報を引続き走査することを特徴とする行走査をくり返して含まれている情報を検出するのに用いられる1個の集積回路チップ上に形成された高密度電荷結合素子搬像アレイ。 said light detector (94) of the 2nd row is the length for a minute of each light detector of said of the 1st row half [ about ] including a light detector (94) of two rows -- having shifted from a light detector of the 1st row of Ri said it -- said light detector (said light detector of the 2nd row detects optical information impressed in the middle of Photo detector, and it Featuress that a light detector of said 1st row and the 2nd row comprises two alignment light detector arrays.) of the 1st row High-density charge coupled device Wi image Dare Rey (2) formed on one integrated circuit chip It is formed on one concentration circuit Detep, a light detector (90) of the 1st row which detects optical information which is looked like [ generating an electric charge in substrate-1-A^Ri of said Pop according to impressed optical information ], and by which 1 scanning line was impressed [ said ] in a form of a Rewriter pit, it resembles said same concentration circuit chip, and is formed, and it is parallel to said light detector of the 1st row, and is a part for an about 1 scanning line from said light detector (90) of the 1st row (a light detector (94) of the 2nd row of aversion ing to A included) said light detector (94) of the 2nd row comes in the middle between said centers of a light detector of the 1st row -- having shifted from a light detector (90) of said 1st sequence to J: obtaining Optical information by which 1 scanning line was impressed [ said ] in a form of a data bit is detected by generating an electric charge in a substrate of said chip according to optical information impressed to the halfway point of said light detector of the 1st row by it, A high-density charge coupled device Portrayal array formed on one integrated circuit chip used for detecting information which repeats a line scan, wherein a light detector of said 1st row and the 2nd row comprises two alignment light detector arrays and scans information on the same line succeedingly with a rusk scanning mode, and is included.
  3. 3
    (3) 1個の集積回路チップ上に形成され、印2- 加された光情報を検出する第1列の光検知器(32)ど、前記集積回路チップ上に形成され、前記第1列の光検知器に隣接しで接触している第2列の光検知Zi(30)とを含み、前記第2列の光検知器(30)は前記第1列の個々の光検知器の約半分の長さだt1前記第1列の光検知器からずれており、それによって前記第1列の光検知器にJ3りる光検知器の中間に印加された光情報を前記第2夕11の光検知器が検出し、前記第1列ど第2列の光検知器は2個の線形光検知器アレイから成ることを1ξ[徴とする1個の集積回路チップ上に形成された高密度電荷結合素子搬像アレイ。 (3) Light detector (32) When of the 1st row which detects optical information which was formed on one integrated circuit chip and carried out as for seal 2-Addition, it being formed on said integrated circuit chip, and including the 2nd-row optical detection Zi (30) that adjoins said light detector of the 1st row, and came out and touches said light detector (30) of the 2nd row is the length for a minute of each light detector of said of the 1st row half [ about ] -- t1 -- having shifted from said light detector of the 1st row a light detector of said 2nd evening 11 detects optical information impressed to said light detector of the 1st row by it in the middle of J three-person Photodetector A high-density charge coupled device Portrayal array formed on one integrated circuit chip which considers as a 1xi[mark that a light detector of the 2nd row of said 1st row When comprises two alignment light detector arrays.
  4. 4
    (4) It is Includingdelta on one integrated circuit chip about the optical detection Virtue [ of the 2nd row of the 1st row When ], 1st, 2nd, 3rd, 4th, and 5th accumulation register, It is the high-density charge coupled device Portrayal array (58) come out of and formed, and said light detector (60) of the 1st row detects impressed optical information, Said light detector (62) of the 2nd row adjoins said light detector of the 1st row, contacts, and is a3 To, it is the length for a minute of each light detector of said of the 1st row half [ about ] -- t-1 -- having shifted from said light detector of the 1st row Said light detector of the 2nd row detects optical information impressed to the halfway point of a light detector in said light detector of the 1st row by it, A light detector of the 2nd row of said 1st row When comprises two alignment light detector arrays, Said 1st accumulation register (72) adjoins said light detector (60) of the 1st row, Optical information on a bit which was detected by said light detector (60) of the 1st row, and was changed into electric charge information is received and accumulated, Said 2nd accumulation register (68) adjoins said light detector (62) of the 2nd row, receive and accumulate optical information on a mutual bit which it Detection(ed) light detector [ said ] (62) of the 2nd row that it is alike, and was changed into electric charge information, and said 3rd accumulation register (70) adjoins said 2nd accumulation register (68) Optical information on the remaining bits that A pasta detection was carried out and were changed into said light detector of the 2nd row at electric charge information is received and accumulated, Said 4th accumulation register (74) adjoins said 1st accumulation register (72), It Acceptance-A, t it carries out and accumulates optical information on a bit of the mutual halfway point which was detected by said light detector (60) of the 1st row, was changed into electric charge information, and was received by said 1st accumulation register (72), Said 5th accumulation register (76) adjoins said 4th accumulation register (74), A high-density charge coupled device 11ii image array formed [ receiving and accumulating optical information on the remaining bits that were detected by said light detector (60) of the 1st row, were changed into electric charge information, and were received by said 1st accumulation register (72), and ] on the feature, One-To, and one integrated circuit chip. (4) 第1列ど第2列の光検知潔ど、第1、第2、第3、第4、第5の蓄積レジスタとを1個の集積回路チップ上に含Δ、で形成された高密度電荷結合素子搬像アレイ(58)であって、前記第1列の光検知器(60)は印加された光情報を検出し、前記第2列の光検知器(62)は前記第1列の光検知器に隣接して接触してa3す、前記第1列の個々の光検知器の約半分の長さだt-1前記第1列の光検知器からずれており、それによって前記第1列の光検知器における光検知器の中間点に印加された光情報を前記第2列の光検知器が検出し、前記第1列ど第2列の光検知器は2個の線形光検知器アレイから成り、前記第1の蓄積レジスタ(72)は前記第1列の光検知器(60)に隣接していて、前記第1列の光検知器(60)により検出されて電荷情報に変換されたビットの光情報を受信して蓄積し、前記第2の蓄積レジスタ(68)は前記第2列の光検知器(62)に隣接していて、前記第2列の光検知器(62)ににり検出されて電荷情報に変換された交互のビットの光情報を受信して蓄積し、前記第3の蓄積レジスタ(70)は前記第2の蓄積レジスタ(68)に隣接していて、前記第2列の光検知器ににり検出されて電荷情報に変換された残りのビットの光情報を受信して蓄積し、前記第4の蓄積レジスタ(74)は前記第1の蓄積レジスタ(72)に隣接し、前記第1列の光検知器(60)により検出されて電荷情報に変換され前記第1の蓄積レジスタ(72)に受信された交互の中間点のビットの光情報を受イtして蓄積し、前記第5の蓄積レジスタ(76)は前記第4の蓄積レジスタ(74)に隣接していて、前記第1列の光検知器(60)により検出されて電荷情報に変換され前記第1の蓄積レジスタ(72)に受信された残りのビットの光情報を受信して蓄積することを特徴とづ-る、1個の集積回路チップ上に形成された高密度電荷結合素子11ii像アレイ。
Independent claims4