Thin film transistor

[Detailed Description of the Invention]

Un-inventing are # film transistor (following TPT and Q-t) ICWa-r by a silicon thin film, for example, multi-crystal Noricon Feu face silicon, and bto, and plans sexual clay T?T%. in recent years, Sour [ to Active @ ] in the research which forms A-board top KTFT -- it is divided. This art can expect many application, such as what is called a three-dimensional Sideways circuit that forms drive elements, such as a transistor, on the active-matrix panel thin form display t-fruit i Carried out using a cheap insulating board, and a certain semiconductor Ebony circuit usual for it being. In four inventions, since T?TK is that of ttI? 11 It was t of the essential characteristic same as the above which can be set, t phase leading is made to 1 go adapting TPT except having mentioned above. The foreword of the one example of the manufacturing method of TPT which used polycrystalline silicon thin - is carried out to below, and it is explained to it. ! Process polycrystalline silicon thin film 102 into A-Sex Syui 101 by I41 ill luck (a) at formation, the putter of Appointment, and A. 10 s of gate Katarin are formed with the formation of A king *@, or a CVD method. Next, Masunari processing of the polycrystalline silicon 104 containing the impurities carried out N A 'Ik'44 as a Kate electrode is carried out. Next, the figure (1) carried out the ion implantation of Do and N Hibiki impurities 105 for 8i] Age gate Apples 104 to Masri, and provided sauce Dorain field 106. After that as shown in the figure (c), Lacquerware-film 107 is formed, and window 108 for pulling out each wiring is opened. It is the figure (d) which was finally Arrangement(ed) - formed by wiring Money 109, such as M. The characteristic acquired from TFT which manufactured sincerity in the above process is shown in the 2nd divisions of wA, and Drawing 5. It is the Kate voltage [ as opposed to sauce to a horizontal axis ] vam in m2 figure, and a vertical axis is the Dorain warm current. It is. It is 4v at the drain voltage to sauce. As for the difference of the characteristic of 3 Contrail, polycrystalline silicon is thick (it is equivalent to T in Drawing 1 (d).) (in AJ, T^=a o o o A and (a) are Tm-5aaaX (aJ is To-20001.)). A horizontal axis is film thickness T of the above-mentioned polycrystalline silicon, and there is in 145 figures, and it is drain current at the time of gate voltage VG@ and = 0 (V) to a vertical axis. It is. the result of Compilation 2 figure and a3 ill luck -- Cage or To -- leakage current in case a transistor is OF F-like cotton is [ like ] dependent on Shikigawa T of polycrystalline silicon -- T -- small To cherish-Kukuji -- l"- a fence -- it is in one Inclination. in that case, To be strong, @3 figure sakes, -- although the chest of 1T>2500~5oooXoiqa Lee y Electricity m hardly changes like -- T (if set to 2500~5oooX, it is tended rapidly to reduce leak Electricity fi) Therefore, many M+t! Since it has the characteristic which the leakage current which flows when applying 7tTFT to a device using /recon and IIiTFT is letter Preference of OFF mentioned above, there is IIk time Spy of the film thickness of upper 6 A multi-Mushi silicon. i# Wearing carries out Conduction of a more than, and it describes the example which applied TPT by polycrystalline silicon to the active-matrix panel. in the liquid crystal panel used for un-inventing, the resistance of g Crystal is nearly about 1o10ohms in alpha1 dawn 0~alpha3-1 base -- therefore, the leakage current of TFT -- an equivalent m enmity -- the crane of a liquid crystal -- there is a fee carried out below (i.e., below 11 Do 11 A). a treasuring-person's experimental result rho sakes and the Insult of many -1 silicon at this time must be the T< 2500 reverse sides. rate @ -- a1 polycrystalline silicon was used the place made into the object of a snipe -- TFTK$P is -- the film thickness of upper 1 polycrystalline silicon -- zsoo! TFTt with the big characteristic of a ratio - using below -- leak Electricity tIL -- reduction Burn it%0N10IF? -- it provides and is in applying to each device. Generally it is a glass substrate of an upper ring to the liquid crystal display at the time of applying to a TIFTi active-matrix panel which describes the example by un-inventing below, It is seized from a lower TPT2I& board and the liquid crystal enclosed between them, and is 's? To, They are arbitrary characters, a figure, and a certain thing that performs front Not of @1J# for being by choosing the liquid crystal drive element arranged in the autumn of the Ma IJ Tux by an external selection circuit on 111^A TFT machine Wisdom, and acting to the liquid crystal drive electrode by which lOk' was connected to 1 drive element as seal Callot of the voltage. The general circuit diagram of fi8 direct'T I'Tm Wisdom is shown in Drawing 4. Drawing 4 (al is a matrix-like arrangement plan of the liquid a drive element on a TPT board.) The field surrounded by one in a figure is a display field, and liquid crystal drive element 2 is arranged in the shape of a matrix in it. 3 is data @ Calah Inn to liquid crystal drive element 2, and 4 is the timing (it is No. 8 line.) to liquid crystal drive element 2. It is non-Ding to w41 figure (b) about the circuit diagram of liquid crystal drive element 2. 5 is TPT -- switching th of data -- it twists. 6 (it is ri capacitor and used as an object for maintenance of data =S.) As for 7, 47% of Ah is 7 with a liquid crystal panel. 1 is the liquid crystal drive electrode formed by carrying out an alias to each liquid crystal drive element, and is a 7-2U upper part glass panel. the above explanation rho sakes -- Re -- To -- like, it is used in order that TPT may switch day 4 of the voltage impressed to a liquid crystal, and the physical properties Expense(ed) by TFT at this time are roughly Dissolution(ed) by 2Ia- of A. ... using tauFTt-ON-like Corridor -- 9:00 capacitor -- current [ name of era / a photoelectrical To deepen sake ] -- China -- things should be made. 121 When you use T thIT 1:OF lr-like Good, current should not flow as much as possible. ... is a thing which is data to a capacitor come one and concerning the lump characteristic. the display of a liquid crystal is decision by the potential of a capacitor -- since it is carried out -- +! i:00 big building -- data -- perfect -- 1! TPT must be able to do sufficiently large Electricity gig Surely so that it can be crowded. Electricity d at this time (henceforth, ON It is electric direct current.) must manufacture VCT P T so that Storage of a capacitor, write-in time and a body ball, and its ON current can be cleared. It is greatly dependent on size (channel length and channel width) of oN@iff and run District, structure, a manufacturing process, the Kate voltage, etc. which TPT can pass. the case where TPT is formed using polycrystalline silicon -- general -- ON current -- a name of era -- Large value 't - obtaining is possible and the requirements of Ruri, therefore ... are satisfied. this differs from the nature semiconductor of un-a, etc. -- polycrystalline silicon -- kana 9 -- large career Transfer ME!llf is obtained -- it loves nine. (21 is related with a capacitor at the maintenance characteristic of 1 Including 1 Was done data.) The data 1@ Cabinet f Made general comes one, it is undertaken farther than lump time and time maintenance must be carried out. the time of TFT being letter General of OFF, since Shigawaya child of conte/To is a small value of Anonymity as A '~IPIP -- only -- also coming out -- if leakage current flows -- Dorain's potential (potential of a A rate capacitor) Fi -- the potential of sauce is approached rapidly and 1 Included cabinet ' next data is no longer held correctly. doing TIFT1r formation of using polycrystalline silicon -- 9 cases -- polycrystalline silicon -- a dinner tray -- since many trap semi- grades are carrying out office In, quite much leakage current flows and uses an inner crystal grain community via this trap -- one Re from the contents described above, or To -- the value of leakage current also becomes large and ONmlft is making the maintenance characteristic of data A patient-ize by TFT using polycrystalline silicon like, although it prays for a comparatively large lie Therefore, it is pressing need that it is small clear two in a leak l device. It is To use that it is also completely the same as when applying to uses other than this [ d ] and a TFTi active-matrix panel. For example, TPT is used and it is logic 1gl abbreviation t-mI25 of al usual state! In stillness current's increasing and constituting a memo 91gl way, it becomes a cause of malfunction at 1 go to carry out. It gives manufacturing process vote 5IIIJ of TNT used for Pale in Confucius Concern. Since it is the same as that of what was explained in Apology 1 figure, a manufacturing method is omitted. The number shown in Drawing 5 is inner-Response(ed) as follows with Investigation which A(ed) in Commission 1 figure. (101-201,102-202...109-209) At real #Ii Ga according to un-inventing again, it is [ the film thickness of polycrystalline silicon, and ] (it is equivalent to A lecture 5 figure T') T' (by using 2500 A, the product with the characteristic whose satisfaction is possible enough was able to be obtained.) The leakage current of TPT not only using the example by un-inventing [ which was mentioned above ] but polycrystalline silicon is stopped at worst, Also in order to get the performance required of the device adapting TPT, it is indispensable, and it is a fee to use t-2 or less sooX of film thickness of multi-Conclusion silicon, as shown in it for the uninvented object. It is film J411 T't of polycrystalline silicon 202 as mentioned above. - low #1. If it is made small, it will be although it can cheat about leak mm' that it is Together to it, If it is made small by a certain film thickness 1, when for example, M-M-81 is used as metal 209 for wiring, it will become impossible to run through a diffusion zone and to take contact. Therefore, despite Wi office, it is restricted to [ that can be stabilized and taken / and how ] it is, contact is carried out, having a possibility that leakage current can be reduced more, and a thickness of the polycrystalline silicon of eye decrease of leak Electricity dt-1 friend is Casing. In order to extract this problem, a non-applicant provides TPT Tufts '1 described below. namely, -- Insult of the polycrystalline silicon of the field in which a channel is formed -- t# -- < -- carrying out -- leakage current -- Truthfulness -- contact to a sauce Dorain field and the metal for wiring -- S -- it is @ Construction taken very much. 1g6- is surpassed and uninvented 1 fruit #ll?ll is explained. Drawing 6 (like a phantom, on A-j& board 301, polycrystalline silicon 502 which carries out the shoulder of the l1ll thickness which can be contact t taken certainly is formed, and it is processed into the pattern of M2.) Film thickness of the errand only by a channel field to A long time (it sy+ A y carries out by or less [ 2500 ] X>t, and is formation A lot to concave 5300'.) It is [ the Bond, heat saponification, and ] the figure (it is bJ.) which were and formed [ certain ] 50 s of gate saponification upbringing by the riCVD method. Like following VC1111 figure (j), they are gate electrodes 504t, such as polycrystalline silicon, to crevice 300. - It provides, Na# carries out impure vJ30 s't ion implantation by using the gate electrode as a mask, and it forms sauce Dorain field 506. Between [ # ] the him and a layer! After forming 11111114507, the 1 figure (d) opened window 508 for taking contact to Arrangement-Money. It is the figure (theta) which carried out wiring formation after vapor-depositing metal 509 for wiring, such as M, after R. Since ft#I To only of the polycrystalline silicon of the field in which a channel is formed can be carried out according to such a structure, contact of the metal for wiring and a sauce Dorain field can be taken certainly, and also it can have in the direction which reduces leak Electricity flt. As mentioned above, as stated, in TPT which used polycrystalline silicon, this @ Ming plans the same as the above of the TPT characteristic which has an effect which can be made to reduce according to a leak Electricity A'fr device demand.

[Brief Description of the Drawings]

It uses for uninvented 6 Ming and Drawing 1 is 7' (it is structure and the Taoyashi method for the same of TFT, and Drawing 2 and silk 3 figure are graphs which show the characteristic.). a byroad of TPT for which the 4th divisions of Compilation are the matrix-like arrangement plan of a liquid crystal drive element used as uninvented dormitory t1-m1g%, and a Liquid crystal frame I11 element circuit diagram, and rice porridge 5 figure was used and a manufacturing method for the same -- " -- it is. ! R6 figures are TFTll$4 which carries out the message of the sex further at the time of TPT in Drawing 5, and its manufacturing method. Above Drawing 1 03 Drawing 2 v6S(V') Drawing 3 1) olyS, 'PAR dish tA Drawing 4 Drawing 6