Mounting construction of semiconductor device
Abstract
PURPOSE:To enable a high density interconnection with a less occupation area for mounting by burrying a chip with a bump into a recess of an insulation circuit substrate with a resin with the face up in such a manner as to be flush in the surface with the substrate. CONSTITUTION:An IC body 4 is housed in a housing section 2 of a substrate 1 made of a resin and ceramics with the face up and burried with the resin 6. A bump 5 is exposed by lapping along with a smooth surface of the substrate 1. Then, a metal thin film 7 is deposited while a through hole 3 is made conductive and a wiring is formed with a resist pattern 8. Finally, covering with Au or the like 9 provents the oxidation of the metal film 7 and improves the junction property. This enables full utilization of the surface of the substrate thereby affording a high density wiring with a less occupation area.

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Projected expiry passed 17 June 2000, 26.3 years ago.
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Every citation, both ways
| Document | Relation | Office | Cited during |
|---|---|---|---|
| US9847325B2 | Cited by | United States of America | Applicant |
| JP2001345560A | Cited by | Japan | Search report |
| US4997791A | Cited by | United States of America | Search report |
| US4931853A | Cited by | United States of America | Search report |
| JP2002290006A | Cited by | Japan | Examiner |
| US8685796B2 | Cited by | United States of America | Applicant |
| US8633591B2 | Cited by | United States of America | Applicant |
| US8975750B2 | Cited by | United States of America | Applicant |
| US9406602B2 | Cited by | United States of America | Applicant |
| US5374893A | Cited by | United States of America | Search report |
| US8823174B2 | Cited by | United States of America | Applicant |
| US7928001B2 | Cited by | United States of America | Applicant |
| US4950623A | Cited by | United States of America | Search report |
| US5289631A | Cited by | United States of America | Search report |
| US8354340B2 | Cited by | United States of America | Applicant |
| US2016307875A1 | Cited by | United States of America | Applicant |
| US5875100A | Cited by | United States of America | Search report |
| US5381946A | Cited by | United States of America | Search report |
| EP1116268A2 | Cited by | European Patent Office (EPO) | Examiner |
| US10580763B2 | Cited by | United States of America | Applicant |
| US10224318B2 | Cited by | United States of America | Applicant |
Numbers
- Application
- 8161180
Titles
- English
- MOUNTING CONSTRUCTION OF SEMICONDUCTOR DEVICE
Classification
- CPC, 10
- H10W70/68
- H10W70/093
- H10W90/734
- H10W70/60
- H10W90/00
- H10W72/9413
- H10W72/874
- H10W72/073
- H10W70/099
- H10W70/682
- IPC, 3
- H01L21 60
- H10W70 68
- H10W74 00