JPS5294784A
Semiconductor device
Abstract
PURPOSE:Two units of memory cell are provided at the cross point between paired line and row lines, and the information complementary to each other is stored. As a result, the gain product of the detection circuit which detects the above mentioned information is redoubled in order to increase the detection sensitivity as well as to facilitate large capacity.

Term
Term ended
Projected expiry passed 5 February 1996, 30.6 years ago.
- Priority and filed
- Published
- Projected expiry
- Today
1 sheet
Sheet 1
Every citation, both ways
| Document | Relation | Office | Cited during |
|---|---|---|---|
| CN100336226C | Cited by | China | Search report |
| US7408218B2 | Cited by | United States of America | Applicant |
| JPS55157194A | Cited by | Japan | Search report |
| JPH0575057A | Cited by | Japan | Search report |
| US7683419B2 | Cited by | United States of America | Applicant |
| US7804118B2 | Cited by | United States of America | Applicant |
| US8106441B2 | Cited by | United States of America | Applicant |
| WO03052829A1 | Cited by | World Intellectual Property Organization (WIPO) | International search |
Numbers
- Application
- 1199876
Titles
- English
- SEMICONDUCTOR DEVICE
Classification
- CPC, 1
- H10B12/00
- IPC, 3
- H10B12 00
- H10D84 00
- G11C11 405