JPS5048882A
Method for producing a semiconductor component protected against excess voltages
2 sheets
Sheet 1 Sheet 2
Every citation, both ways
| Document | Relation | Office | Cited during |
|---|---|---|---|
| US7199402B2 | Cited by | United States of America | Applicant |
| US3417299A | Cites | United States of America | Search report |
8 members in 5 offices
Priority claims1
| Document | Office | Kind | Date |
|---|---|---|---|
| 2310453 | Germany | A |
Members8
| Document | Office | Kind | |
|---|---|---|---|
| DE2310453A1 | Germany | A1 | |
| FR2220096A1 | France | A1 | |
| JPS5048882AThis record | Japan | A | |
| US3919010A | United States of America | A | |
| GB1457909A | United Kingdom | A | |
| FR2220096B1 | France | B1 | |
| DE2310453B2 | Germany | B2 | |
| DE2310453C3 | Germany | C3 |
Numbers
- Application
- 2347074
Classification
- CPC, 7
- H10D62/834
- Y10S438/919
- H10D62/108
- H10D62/60
- H10D18/211
- H10P32/12
- H10P32/171
- IPC, 7
- H01L21 329
- H01L29 06
- H01L29 167
- H01L29 36
- H01L29 866
- H01L29 74
- H10P32 12
