JPS5022988B1
Method for epitactic precipitation of silicon at low temperatures
Abstract
This record has no abstract on file.
Term
Term ended
Expired 26 December 1989, 36.7 years ago.
- Priority
- Filed
- Granted
- Expired
- Today
Every citation, both ways
| Document | Relation | Office | Cited during |
|---|---|---|---|
| JP36000059A | Cites | Japan | Search report |
| JP39017853A | Cites | Japan | Search report |
11 members in 9 offices
Priority claims1
| Document | Office | Kind | Date |
|---|---|---|---|
| 1900116 | Germany | A |
Members11
| Document | Office | Kind | |
|---|---|---|---|
| NL6915313A | Netherlands (Kingdom of the) | A | |
| DE1900116A1 | Germany | A1 | |
| FR2031018A5 | France | A5 | |
| US3661637A | United States of America | A | |
| GB1275891A | United Kingdom | A | |
| CH523970A | Switzerland | A | |
| AT309535B | Austria | B | |
| SE363245B | Sweden | B | |
| JPS5022988B1This record | Japan | B1 | |
| DE1900116B2 | Germany | B2 | |
| DE1900116C3 | Germany | C3 |
Numbers
- Application
- 10449969
Classification
- CPC, 12
- C30B29/06
- C01B33/02
- C23C16/481
- C23C16/482
- C30B25/02
- Y10S117/904
- Y10S148/007
- Y10S148/017
- Y10S148/027
- Y10S148/049
- Y10S148/051
- Y10S148/071
- IPC, 5
- C30B25 10
- C01B33 02
- C23C16 48
- C30B25 02
- C30B29 06