Heat treatment device and method

Description: TECHNICAL FIELD [Detailed description of the invention]

【0001】

[Industrial application field]

The present invention relates to a heat treatment apparatus and a heat treatment method.

【0002】

[Conventional technology]

Generally, in the manufacturing process of a semiconductor device, a circuit pattern is reduced by using a photolithography technique, transferred to a photoresist, exposed to light, and then developed.

【0003】

When performing such processing, a processing system is used in which a coating / developing apparatus and an exposure apparatus are connected via an interface portion for carrying in and out a semiconductor wafer as an object to be processed. In this processing system, the semiconductor wafer is hydrophobized in a coating and developing apparatus in order to improve the adhesion of the resist to the surface, cooled to a predetermined temperature, and then heat-treated after the resist is applied. .. Then, the semiconductor wafer is conveyed to the interface portion, delivered to the exposure apparatus, exposed, and then conveyed to the coating and developing apparatus again for development processing.

【0004】

[Problems to be Solved by the Invention]

In the heat treatment apparatus that performs cooling treatment and heat treatment in the above-mentioned conventional processing system, when controlling the temperature of the semiconductor wafer to be processed, the semiconductor wafer is placed on a hot plate or a cold plate that is set and controlled to a desired temperature. By keeping the wafer close to each other, the temperature of the wafer was tentatively brought close to the hot plate temperature or the cold plate temperature. However, this method has a problem that it takes a long time for the temperature of the semiconductor wafer to reach a desired temperature because of heat conduction by radiation and convection.

【0005】

The present invention has been made under such circumstances, and an object of the present invention is that heat treatment can be performed from both the front and back surfaces of the object to be treated, and the temperature can be rapidly raised and lowered to shorten the heat treatment time, and the throughput can be shortened. It is an object of the present invention to provide a heat treatment apparatus and a heat treatment method capable of improving the above.

【0006】

[Means for solving problems]

The invention of claim 1 is a temperature elevating means provided on a mounting table on which the object to be processed is placed in a heat treatment apparatus for mounting the object to be processed and controlling the temperature of the object to be processed, and the temperature elevating means. The temperature elevating means and the temperature elevating means are provided by arranging a supporting means that projects to the upper surface to support the object to be processed and a temperature elevating accelerating means that elevates the temperature of the object to be processed at a high speed at a position facing the temperature elevating means. The accelerating means is provided independently so that the temperature can be controlled, and the object to be processed is formed so as to be able to move forward and backward with respect to either the temperature elevating means or the temperature elevating accelerating means by the supporting means. It is characterized in that the distance between the temperature raising / lowering means and the temperature raising / lowering acceleration means can be adjusted.

【0007】

According to the second aspect of the present invention, in a heat treatment apparatus for mounting an object to be processed and controlling the temperature of the object to be processed, a temperature elevating means provided on a mounting table on which the object to be processed is placed, and the temperature elevating means. A sealed space was formed at the opposite position with the temperature elevating and accelerating means for raising and lowering the temperature of the object to be processed at high speed, and an annular exhaust passage was formed on the outer periphery of the sealed space and provided in this annular exhaust space. It is characterized by exhausting through an exhaust port.

【0008】

The invention of claim 3 is a temperature elevating means provided on a mounting table on which the object to be processed is placed in a heat treatment apparatus for mounting the object to be processed and controlling the temperature of the object to be processed, and the temperature elevating means. A support means that projects from the upper surface of the object to support the object to be processed and a temperature increase / decrease acceleration means that raises and lowers the temperature of the object to be processed at a high speed at a position facing the temperature elevating means are arranged and supported by the support means. When the temperature of the object to be processed reaches a predetermined temperature based on the temperature detecting means for detecting the temperature of the object to be processed and the signal from the temperature detecting means, a signal is transmitted to the driving unit of the supporting means. It is characterized in that it is provided with a control means.

【0009】

The invention of claim 4 is a cooling means provided on a mounting table on which a heat-treated object is placed and the heat-treated object is placed and cooled in a heat treatment apparatus for placing the object to be processed and controlling the temperature of the object to be processed. A support means that protrudes from the upper surface of the cooling means to support the object to be processed and a cooling acceleration means that cools the temperature of the object to be processed at a high speed at a position facing the cooling means are arranged to form the cooling means and the cooling means. The cooling accelerating means is provided independently so that the temperature can be controlled, and the object to be processed is formed so as to be able to move forward and backward with respect to either the cooling means or the cooling accelerating means by the supporting means. It is characterized in that the distance from the cooling acceleration means can be adjusted.

【0010】

The invention of claim 5 is a temperature elevating means provided on a mounting table on which the object to be processed is placed and an upper surface of the temperature elevating means when the object to be processed is placed and the temperature of the object to be processed is controlled. A support means for supporting the object to be processed and a temperature increase / decrease accelerating means for increasing / decreasing the temperature of the object to be processed at a high speed are arranged at a position facing the temperature elevating means. The temperature of the means is controlled independently, and the object to be processed is formed so as to be able to move forward and backward with respect to either the temperature elevating means or the temperature elevating acceleration means by the supporting means, so that the object to be processed and the temperature elevating means are formed. It is characterized by adjusting the distance from the temperature elevating and accelerating means.

【0011】

[Action]

In the inventions of claims 1 and 5, the temperature elevating means set to a desired temperature provided on the mounting table on which the object to be processed is placed and the temperature of the object to be processed are located at positions facing the temperature elevating means. For the purpose of raising and lowering the temperature at high speed, a temperature raising / lowering acceleration means set slightly lower than the desired temperature when lowering the temperature of the object to be processed and slightly higher than the desired temperature is provided when raising the temperature of the object to be processed. doing. The temperature elevating means and the temperature elevating accelerating means can independently control the temperature, and the supporting means projecting from the upper surface of the temperature elevating means to support the object to be processed brings the object to be processed close to the temperature elevating accelerating means to rapidly heat the temperature. When the temperature approaches a desired temperature, the object to be processed can be moved away from the temperature raising / lowering acceleration means and brought close to the temperature raising / lowering means to gradually change the temperature to obtain the desired temperature.

【0012】

Further, in the invention of claim 2, a sealed space is formed between the temperature elevating means and the temperature elevating accelerating means, an annular exhaust passage is formed on the outer peripheral portion of the sealed space, and an exhaust port provided in the annular exhaust space. By exhausting the air through the space, the cooling or heat treatment of the surface of the object to be processed can be made uniform, and the film thickness of the surface of the object to be processed can be made uniform.

【0013】

Further, according to the invention of claim 3, the temperature detecting means for detecting the temperature of the object to be processed on the supporting means is provided between the temperature raising / lowering means and the temperature raising / lowering accelerating means. Based on the signal, when the temperature of the object to be processed close to the temperature elevating acceleration means reaches a preset temperature, the drive unit is operated by the control means that transmits the signal to the drive unit of the support means. .. Then, the object to be processed can be brought close to the temperature elevating means, and the temperature of the object to be processed can be gently controlled under the optimum conditions to a preset desired temperature.

【0014】

In the invention of claim 4, the cooling means provided on the mounting table on which the object to be processed is placed and cooled is set to a desired temperature, and the temperature of the object to be processed is cooled at a high speed at a position facing the cooling means. For the purpose of causing the cooling, a cooling acceleration means set slightly lower than the desired temperature of the object to be processed is arranged. The cooling means and the cooling accelerating means can independently control the temperature, and the supporting means projecting from the upper surface of the cooling means to support the object to be processed brings the object to be processed close to the cooling accelerating means to rapidly cool the temperature. When the temperature approaches a desired temperature, the object to be processed can be moved away from the cooling accelerating means and brought close to the cooling means to gradually change the temperature to obtain the desired temperature.

【0015】

[Example]

When performing such processing, the processing system shown in FIG. 1 is used. This processing system uses a loader unit 40 for loading and unloading a semiconductor wafer W (hereinafter referred to as a wafer) as an object to be processed, a brush cleaning device 42 for brush-cleaning the wafer W, and a high-pressure jet water for cleaning the wafer W. A jet water cleaning device 44, an adhesion treatment device 46 for hydrophobizing the surface of the wafer W, a cooling treatment device 48 for cooling the wafer W to a predetermined temperature, and a resist coating device 50 for applying a resist to the surface of the wafer W. The heat treatment device 52 that heats the wafer W to perform pre-baking or post-baking before and after the resist coating, the developing device 54 that develops the wafer W, and the like are integrally assembled to improve work efficiency.

【0016】

A wafer transfer path 56 is provided along the longitudinal direction in the central portion of the processing system configured as described above, and the devices 40 to 54 are arranged in the wafer transfer path 56 with the devices 40 to 54 facing the front. The body 58 can move on the wafer transfer path 56 in order to transfer the wafer W to each of the devices 40 to 54.

【0017】

The wafer W is hydrophobized by the adhesion treatment device 46 and then cooled to a predetermined temperature by the cooling treatment device 48, and is heat-treated by the heat treatment device 52 after being coated with the resist by the resist coating device 50 and then cooled. It is cooled to a predetermined temperature by the processing device 48. Further, the wafer W heated by the heat treatment device 52 after the resist is applied on the surface by the resist coating device 50 is cooled by the cooling treatment device 48 and then conveyed from an interface portion (not shown) to an exposure device (not shown). Is exposed. Then, the exposed wafer W is again conveyed to the coating and developing apparatus via an interface portion (not shown), and is developed by the developing apparatus 54.

【0018】

FIG. 2 is a schematic explanatory view of the heat treatment apparatus of the present invention, FIG. 3 is a schematic perspective view of the heat treatment apparatus, FIG. 4 is a plan view showing a part of the heat treatment apparatus in cross section, and FIG. 5 is a side view showing a part in cross section. It is shown. The first embodiment is a case where the heat treatment apparatus of the present invention is applied to the cooling treatment apparatus 48 of the above treatment system.

【0019】

As shown in FIG. 2, the cooling processing device 48 has a mounting table 61 as a cooling means (temperature raising / lowering means) for mounting and cooling the wafer W, and a through hole 62 provided in the mounting table 61. A plurality of, for example, three support pins 63, which are configured to penetrate and appear on the upper surface of the mounting table 61 so as to project and support the wafer W at the upper end and be separated from the mounting table 61, and the mounting table 61 with respect to the wafer W. The main part is composed of an upper lid 65 as a cooling accelerating means (temperature elevating accelerating means) at an upper position facing the above.

【0020】

In this case, a cooling water supply passage 67 is provided inside the mounting table 61 and the upper lid 65, and the cooling water supply source 69 is connected to the supply passage 67 via the pipe 68. Further, the support pin 63 is erected on the elevating plate 72 which is connected to the elevating cylinder 71 (drive unit) and moves up and down, and moves up and down together with the elevating plate 72 which moves up and down by the drive of the elevating cylinder 71. It can appear on the upper surface of 61. The support pin 63 configured in this way can support the wafer W in a state of projecting onto the mounting table 61, and the wafer W is housed in the through hole 62 of the mounting table 61 with the support pin 63 lowered. In the state, it is supported on a plurality of, for example, three proximity pins 73 protruding on the mounting table 61. At this time, the distance between the wafer W and the upper surface of the mounting table 61 is about 0.3 mm.

【0021】

Further, the processing space between the mounting table 61 and the upper lid 65 is a sealed space 75 that is shielded from the outside air, and an annular exhaust passage 77 is provided on the outer peripheral portion of the sealed space 75. As shown in FIG. 6, exhaust ports 78 are provided at four locations of the annular exhaust passage 77, and the exhaust duct 80 is connected to the exhaust port 78 via the exhaust pipe 79 and communicated with the exhaust duct 80. The inside of the sealed space 75 can be exhausted by driving a vacuum pump (exhaust device) (not shown).

【0022】

A supply pipe 81 for a purge gas such as nitrogen (N2) gas is inserted in the sealed space 75, and N2 gas as a purge gas is supplied from the supply pipe 81. By discharging N2 gas or air at a constant flow rate in this way, the airflow in the sealed space 75 can be laminarized and the heat effect on the wafer W can be reduced. Further, the balance between the amount of N2 gas or air and the amount of exhaust gas can be changed to create a condition having the smallest heat effect on the wafer W, and discharge / exhaust can be performed under that condition.

【0023】

On the other hand, a sensor 83 is attached as a temperature detecting means to at least one place on the inner surface of the upper lid 65, and the sensor 83 can detect the temperature of the surface of the wafer W supported by the support pin 63. It has become like. As the sensor 83, for example, a radiation thermometer that detects the temperature by measuring the amount of radiation such as infrared light emitted from the surface of the wafer W is used. The sensor 83 does not necessarily have to be attached to the inner surface of the upper lid 65, and may be attached to the mounting base 61 side. For example, it may be arranged below the periphery of the wafer W and the temperature may be measured from the back surface side of the wafer W.

【0024】

The measured value detected by the sensor 83 configured in this way is transmitted as a detection signal to the central processing unit (hereinafter referred to as CPU) 85, which is a control means, and is subjected to comparative calculation processing with the data stored in advance by this CPU 85. The control signal is transmitted to the elevating cylinder 71 of the drive unit of the support pin 63 and the transfer mechanism drive unit 87 of the wafer transfer body 58.

【0025】

Next, the operation mode of the cooling processing apparatus 48 will be described. First, the wafer W heat-treated by the heat treatment device 52 at a temperature of about 90 ° C. or higher is taken out from the heat treatment device 52 by the wafer carrier 58 and then transported to the cooling treatment device 48 and placed on the mounting table 61. It is supported by a support pin 63 that protrudes from the surface. After delivering the wafer W to the support pin 63, the wafer carrier 58 retreats from the cooling processing device 48. The wafer W supported by the support pin 63 is exposed to air in the sealed space 75 or an N2 gas atmosphere supplied from the supply pipe 81.

【0026】

The wafer W supported by the support pin 63 is brought close to the upper lid 65, which is a cooling acceleration means (temperature elevation acceleration means), by the elevating cylinder 71 extending. At this time, the upper lid 65 keeps the cooling water supplied from the cooling water supply source 69 at a temperature preset by the CPU 85, that is, a temperature slightly lower than a desired temperature, for example, 15 ° C., by flowing through the supply passage 67. It is leaning.

【0027】

In this state, the wafer W is rapidly cooled, the temperature of the wafer W is detected intermittently or continuously by the temperature sensor 83, and when the temperature of the wafer W drops to, for example, 30 ° C, the CPU 85 can start descending. A signal is transmitted to the elevating cylinder 71, and the elevating cylinder 71 contracts. As the elevating cylinder 71 contracts, the support pin 63 descends together with the elevating plate 72 and is stored in the through hole 62 to mount the wafer W. Place it on 61, ie on proximity pin 73.

【0028】

The wafer W mounted on the mounting table 61 is gently cooled to a desired temperature (specifically, 23 ° C.) by the cooling water supplied to the supply passage 67 provided on the mounting table 61. When the wafer W is cooled to a desired temperature, the elevating cylinder 71 expands to raise the support pin 63 and protrudes onto the mounting table 61 to support the wafer W. In this state, the wafer carrier 58 enters the cooling processing device 48 to receive the wafer W, and then the wafer W is taken out from the cooling processing device 48 and transported to the next processing step.

【0029】

Here, the desired temperature is a temperature required by the exposure apparatus, for example, 23 ° C. As microfabrication progresses as in the present, while the temperature accuracy of the wafer W at the time of exposure is strictly required, the processing time is also required to be shortened in terms of productivity efficiency. FIG. 7 shows a graph showing the relationship between time and temperature by the conventional cooling means (temperature raising and lowering means), and FIG. 8 shows the time and temperature by the cooling means (temperature raising and lowering means) and the cooling acceleration means (temperature raising and lowering means) of the present invention. The graph which shows the relationship of is shown. As is clear from the graph, the cooling acceleration means (temperature increase / decrease acceleration means) arranged for the purpose of cooling (elevating) the temperature of the wafer W at high speed enables the temperature to be rapidly cooled (elevated) and the heat treatment time to be shortened. , Throughput can be improved.

【0030】

The second embodiment is a case where the heat treatment apparatus of the present invention is applied to the heat treatment apparatus 52 used in the coating and developing apparatus for the semiconductor wafer shown in FIG. As shown in FIG. 2, the heat treatment device 52 is provided on a mounting table 61 as a heating means (temperature raising / lowering means) for mounting and heating the wafer W, and on the mounting table 61, as shown in FIG. With a plurality of, for example, three support pins 63, which are configured to penetrate the through hole 62 and to appear and disappear on the upper surface of the mounting table 61, to project and support the wafer W at the upper end and to be separated from the mounting table 61. The main part of the wafer W is composed of an upper lid 65 as a heating acceleration means (temperature raising / lowering acceleration means) at an upper position facing the mounting table 61.

【0031】

In this case, a heater 91 is provided inside the mounting table 61 and the upper lid 65, and the heater power supply 93 is connected to the heater 91 via a lead wire 92. Further, the support pin 63 is erected on the elevating plate 72 which is connected to the elevating cylinder 71 (drive unit) and moves up and down, and moves up and down together with the elevating plate 72 which moves up and down by the drive of the elevating cylinder 71. It can appear on the upper surface of 61. The support pin 63 configured in this way can support the wafer W in a state of projecting onto the mounting table 61, and the wafer W is housed in the through hole 62 of the mounting table 61 with the support pin 63 lowered. In the state, it is supported on a plurality of, for example, three proximity pins 73 protruding on the mounting table 61. At this time, the distance between the wafer W and the upper surface of the mounting table 61 is about 0.3 mm.

【0032】

Further, the processing space between the mounting table 61 and the upper lid 65 is a sealed space 75 that is shielded from the outside air, and an annular exhaust passage 77 is provided on the outer peripheral portion of the sealed space 75. As shown in FIG. 6, exhaust ports 78 are provided at four locations of the annular exhaust passage 77, and the exhaust duct 80 is connected to the exhaust port 78 via the exhaust pipe 79 and communicated with the exhaust duct 80. The inside of the sealed space 75 can be exhausted by driving a vacuum pump (exhaust device) (not shown).

【0033】

A supply pipe 81 for a purge gas such as nitrogen (N2) gas is inserted in the sealed space 75, and N2 gas as a purge gas is supplied from the supply pipe 81. By discharging N2 gas or air at a constant flow rate in this way, the airflow in the sealed space 75 can be laminarized and the heat effect on the wafer W can be reduced. Further, the balance between the amount of N2 gas or air and the amount of exhaust gas can be changed to create a condition having the smallest heat effect on the wafer W, and discharge / exhaust can be performed under that condition.

【0034】

On the other hand, a sensor 83 is attached as a temperature detecting means to at least one place on the inner surface of the upper lid 65, and the sensor 83 can detect the temperature of the surface of the wafer W supported by the support pin 63. It has become like. As the sensor 83, for example, a radiation thermometer that detects the temperature by measuring the amount of radiation such as infrared light emitted from the surface of the wafer W is used. The sensor 83 does not necessarily have to be attached to the inner surface of the upper lid 65, and may be attached to the mounting base 61 side. For example, it may be arranged below the periphery of the wafer W and the temperature may be measured from the back surface side of the wafer W.

【0035】

The measured value detected by the sensor 83 configured in this way is transmitted as a detection signal to the central processing unit (hereinafter referred to as CPU) 85, which is a control means, and is subjected to comparative calculation processing with the data stored in advance by this CPU 85. The control signal is transmitted to the elevating cylinder 71 of the drive unit of the support pin 63 and the transfer mechanism drive unit 87 of the wafer transfer body 58.

【0036】

Next, the operation mode of the heat treatment apparatus of the present invention configured as described above will be described. Here, the heat treatment (prebaking) of the wafer W after the resist coating will be described.

【0037】

First, when the wafer W after resist coating is held by the wafer carrier 58 and the wafer W is conveyed to a fixed position above the mounting table 61 via the opening 52A, the support pin 63 rises and the wafer W After the wafer carrier 58 retracts, the opening 52A is closed and the wafer W is placed on the mounting table 61 in the sealed space 75 (processing space). In this state, purge gas is supplied from the supply pipe 81 into the sealed space 75, the inside of the sealed space 75 is replaced with N2 gas, and then the mounting table 61 and the heater 91 of the upper lid 65 are driven and adjusted to a predetermined processing temperature in advance. The front and back surfaces of the wafer W are rapidly heat-treated by the heat of.

【0038】

Alternatively, in the case of performing an operation mode requiring strict temperature control as in the first embodiment, the wafer W supported by the support pin 63 is heated and accelerated by the elevating cylinder 71 extending. It is close to the upper lid 65, which is a means (temperature raising / lowering acceleration means). At this time, the upper lid 65 is maintained at a temperature preset by the CPU 85, that is, a temperature slightly higher than a predetermined temperature due to the heat generated by the heater 91. The predetermined temperature can be set and changed arbitrarily.

【0039】

In this state, the wafer W is heated rapidly, the temperature of the wafer W is detected intermittently or continuously by the temperature sensor 83, and when the temperature of the wafer W rises to near a predetermined temperature, the wafer W can start descending from the CPU 85. A control signal is transmitted to the elevating cylinder 71, and the elevating cylinder 71 contracts. As the elevating cylinder 71 contracts, the support pin 63 descends together with the elevating plate 72 and is housed in the through hole 62 to mount the wafer W. It is placed on the stand 61, that is, on the proximity pin 73.

【0040】

The wafer W mounted on the mounting table 61 is slowly cooled to a predetermined temperature by the heat generated by the heater 91 provided on the mounting table 61. When the wafer W is heated to a predetermined temperature, the elevating cylinder 71 expands to raise the support pin 63 and protrudes onto the mounting table 61 to support the wafer W. In this state, the wafer carrier 58 enters the heat treatment device 52 and receives the wafer W, and then the wafer W is taken out from the heat treatment device 52 and conveyed to the next processing step.

【0041】

During the heat treatment, a vacuum pump (not shown) interposed in the exhaust duct 80 operates, so that the air used for the heat treatment in the sealed space 75 is uniformly exhausted toward the annular exhaust passage 77, and the annular exhaust is performed. After flowing into the passage 77, it flows from the exhaust port 78 through the exhaust pipe 79 and is exhausted through the exhaust duct 80. Therefore, since the exhaust gas is uniformly exhausted, it is possible to prevent a one-sided rising phenomenon in which the film thickness is partially thickened due to non-uniformity of the exhaust flow.

【0042】

In the above embodiment, in the heat treatment apparatus of the present invention, the case where the temperature elevating means is provided on the mounting table 61 and the temperature elevating acceleration means is provided on the upper lid 65 has been described, but the present invention is not limited to this apparatus, and conversely, the temperature is increased. The elevating means may be provided on the upper lid 65, and the temperature elevating means may be provided on the mounting table 61. In terms of heat convection, it is desirable to place a hotter member on the upper side. Further, in the above embodiment, the temperature elevating means and the temperature elevating accelerating means are arranged so as to face each other vertically, but the present invention is not limited to this arrangement method, and if the same effect is obtained, the temperature elevating means and the temperature elevating accelerating means may be arranged on the left and right sides. Moreover, it does not matter at all even if they are not facing each other.

【0043】

In the above embodiment, the case where the heat treatment apparatus of the present invention is applied to a coating and developing apparatus for a semiconductor wafer has been described, but the present invention is not limited to this apparatus, and can be applied to a heat treatment apparatus other than the coating and developing apparatus, and a semiconductor. Of course, it can also be applied to heat treatment of objects to be processed such as LCD glass substrates and CDs other than wafers.

【0044】

[Effect of the invention]

As described above, the heat treatment apparatus of the present invention is configured as described above, so that the following effects can be obtained.

【0045】

According to the heat treatment apparatus and heat treatment method according to claims 1 and 5, heat treatment can be performed from both the front and back surfaces of the object to be processed, and the temperature increase / decrease acceleration arranged for the purpose of raising and lowering the temperature of the object to be processed at high speed is possible. By means, the temperature can be raised and lowered rapidly to shorten the heat treatment time, and the throughput can be improved.

【0046】

Further, according to the heat treatment apparatus according to claim 2, a sealed space is formed between the temperature elevating means and the temperature elevating accelerating means, an annular exhaust passage is formed on the outer peripheral portion of the sealed space, and the annular exhaust space is formed. By exhausting the air through the exhaust port provided in the above, the cooling or heat treatment of the surface of the object to be processed can be made uniform, and the film thickness of the surface of the object to be processed can be made uniform.

【0047】

Further, according to the heat treatment apparatus according to claim 3, the temperature is controlled between the temperature elevating means and the temperature elevating acceleration means, and the heat treatment of the object to be processed is automatically performed under the optimum temperature conditions. It is possible to improve the throughput without damaging the circuit pattern on the body and the surface of the object to be treated.

【0048】

According to the heat treatment apparatus according to claim 4, the cooling treatment can be performed from both the front and back surfaces of the object to be processed, and the temperature is rapidly adjusted by the cooling acceleration means arranged for the purpose of cooling the temperature of the object to be processed at high speed. The cooling process time can be shortened by lowering the temperature, and the throughput can be improved.

[Simple explanation of drawings]

[Figure 1]

It is a schematic perspective view which shows the processing system to which the heat treatment apparatus of this invention is applied.

[Figure 2]

It is the schematic explanatory drawing which shows the Example of the heat treatment apparatus of this invention.

[Fig. 3]

It is a schematic perspective view of the heat treatment apparatus of this invention.

[Fig. 4]

It is a top view which shows a part of the heat treatment apparatus of this invention in cross section.

[Fig. 5]

It is a side view which shows a part of the heat treatment apparatus of this invention in cross section.

[Fig. 6]

It is an enlarged sectional view which shows the sealed space and the annular exhaust passage in this invention.

[Fig. 7]

It is a chart of time and temperature in a conventional heat treatment apparatus.

[Fig. 8]

It is a chart of time and temperature which shows the effect of the 1st Example of the heat treatment apparatus of this invention.

[Explanation of symbols]

W Semiconductor wafer (processed object) 48 Cooling treatment equipment 52 Heat treatment equipment 61 Mounting stand (temperature raising / lowering means) 63 Support pin 65 Top lid (Temperature increase / decrease acceleration means) 67 Supply aisle 69 Cooling water source 71 Lifting cylinder (drive unit) 73 Proximity Pin 75 Sealed space 77 Circular exhaust passage 78 Exhaust port 81 Supply pipe 83 sensor 85 Central Processing Unit (CPU) 91 heater 93 heater power supply