Liquid crystal display device

[Detailed Description of the Invention]

[Industrial Application] . concerning [ the present invention ] a liquid crystal display and the liquid crystal display of the Activity matrix method which uses thin film 1, run District, etc. especially [conventional art] The liquid crystal display of an active matrix system provides a nonlinear element (switching element) corresponding to each of a plurality of picture electrodes arranged in the shape of a matrix. Since Fight (duty ratio 1.0) of the liquid crystal in each pixel is always carried out theoretically, compared with what is called a passive matrix that has adopted the time sharing drive system, an active method has good contrast, and it is becoming the especially indispensable art in color. A thin film transistor (T P T) is typical as a switching element. The liquid crystal display section (liquid crystal display panel) of a liquid crystal display, The top clear glass board provided with the protective film of a color filter and a color filter, the transparent-in common picture electrode, and the film for Arrangement one by one, The protective film of a thin film transistor, and a transparent picture electrode and a thin film transistor and the film for Arrangement are constituted by the sealing member (sealing member) etc. of the lower clear glass board provided one by one, the liquid crystal enclosed between each [ of both boards ] film for Arrangement, and the liquid crystal. An active-matrix-liquid-crystal display which uses TPT, for example, "the 12.5 type active-matrix method color liquid crystal display which adopted redundant Structure", the Nikkei electronics, 193~210 pages, and l December, 986 l -- it Nikkei McGraw-Hill[, Inc. ]-publishes, and is come out and known for five days. [Problem(s) to be Solved by the Invention] Drawing 11 is a figure for explaining conventional technology, and is a sectional view of the end of a liquid crystal display section. As for a top clear glass board and FIL, in SUB2, a color filter and PSv2 are the protective films of a color filter, As for the silver paste material (Conductive paper 1 strike material) for a transparent-in common drawing iA electrode and SUBI pulling out DT with a lower clear glass board, it pulling out with a drawer terminal, and SIL pulling out ITO2 with ITO2, and connecting terminal DT, and LC, as for a liquid crystal and SL, seal material, POL1, and POL2 are polarizing plates. Since drawer terminal DT comprises two-layer [ of opaque Cr ] conventionally, It pulls out with silver paste material SIL from the lower clear glass board SUBI side (namely, the direction of arrow A), and a connected state with terminal DT is not in sight, but it is a position gap of silver paste SIL, . with the problem which a failure to attach produces and defective continuity produces -- although color filter FIL and protective film PSV2 exist among both again when seeing the connected state of silver paste material SIL and transparent-in common picture electrode ITO2 from the top clear glass board SUB2 side (namely, the direction of arrow B) Since as for these it is transparent and transparency is in sight although it is low, a connected state is in sight. However, it is since the black matrix for shading to a certain TPT from Cr etc. may be provided instead of color filter FIL and a connected state is not in sight in this case, The object of . present invention which a position gap of silver paste SL and a failure to attach produce after all, and defective continuity produces is to provide the connected state of the electric conduction object which connects both the electric conduction films provided in the up-and-down transparent substrate, and the liquid crystal display which can see a position. The above of the present invention, and the other objects and the new feature will become clear with description and the accompanying drawing of this specification. [Means for Solving the Problem] In order to Or the above-mentioned object, it is a liquid crystal display of the present invention, The 1st electric conduction film provided on the 1st transparent substrate and the 2nd electric conduction film provided on the 2nd transparent substrate are provided, and the 1st transparent substrate of the above and the 2nd transparent substrate of the above are separated and piled [ interval / facing each other / predetermined ] up in a field in which both the above-mentioned electric conduction films were provided, respectively, It is connected by electric conduction object established among both the above-mentioned substrates, and both the above-mentioned electric conduction films are the above-mentioned electric conduction object and an electric conduction film of above 1st, . to which at least 1 side of an electric conduction film of above 2nd is characterized by being connected by transparent conductive film, and a liquid crystal display of the present invention, The 1st electric conduction film provided on the 1st transparent substrate and the 2nd electric conduction film provided on the 2nd transparent substrate are provided, and the 1st transparent substrate of the above and the 2nd transparent substrate of the above are separated and piled [ interval / facing each other / predetermined ] up in a field in which both the above-mentioned electric conduction films were provided, respectively, An opaque film which both the above-mentioned electric conduction films are connected by electric conduction object established among both the above-mentioned substrates, and exists between the above-mentioned electric conduction object and at least 1 side of the 1st transparent substrate of the above and the 2nd transparent substrate of the above is provided with an opening. [Function] Since the transparent conductive film was provided in the present invention between the electric conduction object for connecting both electric conduction films, and the transparent substrate, Since the opening was provided in . which can see the connected state of an electric conduction object, and a position from the outside of a transparent substrate, and the opaque film which exists between an electric conduction object and a transparent substrate, the connected state of an electric conduction object and a position can be seen from the outside of a transparent substrate. The example of Precaution of the present invention and an operation are explained using figures. Drawing 1 (A) is a top view of a liquid crystal display section in which the sectional view of a liquid crystal display section showing the 1st example of Structure of the present invention and Drawing 1 (B) show the part plan of Drawing 1 (A), and Drawing 1 (C) shows the 2nd example of Structure of the present invention. Since it pulls out to Drawing 1 (A) and (B) with electric conduction object SIL and terminal DT is connected to it by transparent conductive film TE by the present invention so that it may be shown, the connected state of electric conduction object SIL and a position can be seen from the outside of lower clear glass board SUBI. Since opening OP was provided in opaque film BM of A leap of top clear glass board SUB2 and electric conduction object SIL when the outside of display field DR was shaded by light-shielding film BM as shown in Drawing 1 (C), the connected state of electric conduction object SIL and a position can be seen from the outside of top clear glass board SUB2. [Example] Hereinafter, the composition of the present invention is explained with the example which applied the present invention to the color liquid crystal display of the active matrix. In the plan for describing an example, what has the same function attaches the same numerals, and it omits explanation of the repetition. the --A [ 2 ] figure is a top view showing the stroke matter and the circumference of the active-matrix method color liquid crystal display with which the present invention is applied the --B [ 2 ] figure -- the -- it is a figure showing the section in 11 B-nB cutout line ofA [ 2 ] figure, and the section near the seal part of a display panel -- the --C [ 2 ] figure -- the -- it is a sectional view in the ■C1■C cutout line ofA [ 2 ] figure. moreover -- Drawing 3 (important section top view) -- the -- a top view when multiple pixels shown inA [ 2 ] figure have been arranged is shown. <<Pixel arrangement>> the -- as shown inA [ 2 ] figure, each pixel is arranged in the crossing area of two adjoining scanning signal wires (a gating signal line or a level signal wire) GL and two adjoining picture signal lines (the Dorain signal wire or a perpendicular signal wire) DL (inside of the field surrounded with four signal wires). Each pixel contains thin film transistor TPT and picture electrode ITO1 and addition capacity C add. Picture signal line DL which scanning signal wire OL extends in a column direction, and is arranged two or more for whereabouts extends for whereabouts, and is arranged two or more in the column direction. <<The whole panel section structure>> the -- as shown inB [ 2 ] figure, thin film transistor TPT and transparent picture electrode ITO1 are formed in the lower clear glass board SUBI side on the basis of liquid crystal layer LC The . lower clear glass board SUBl side by which color filter FIL and black-matrix pattern BM for shading are Form(ed) at the top clear glass board SUB2 side is .1.1, for example. It Construction by the thickness about [mm]. Although the central part of the 2nd the B figure shows the section of the stroke matter portion, left-hand side shows the section of the portion in which external drawer wiring exists in clear glass board SUBI and the left side edge portion of SUB2. Right-hand side shows the section of the portion in which external drawer wiring does not exist by the right-hand side edge portion of clear glass boards SUB1 and SUB2. Seal material SL shown in each of left-hand side of the 2nd the B figure and right-hand side is Construction(ed) so that liquid crystal LC may be closed. . seal material SL currently formed along with clear glass board SUBI except a liquid crystal enclosure mouth (not shown) and the whole edge circumference of SUB2 is Form(ed) by an epoxy resin, for example. Transparent-in common picture electrode ITO2 by the side of the above-mentioned top clear glass board StJBZ, . connected to the external drawer wiring Form(ed) by silver paste material SIL at lower clear glass machine IsUBI side at at least one place -- this external drawer wiring is formed by the same manufacturing process as each of Gaea I and electrode GT, and sauce electrode SD1 and Dorain electrode SD2. [ which was mentioned above ] Each layer of @ORI1 for Arrangement, ORI2, transparent picture electrode ITO, transparent-in common picture electrode ITO, protective film PSVI, and PSV2. insulation film GI, . polarizing plate POL Form(ed) inside seal material SL is Shape(ed) by lower clear glass board SUBI and the surface of each outside of top clear glass board StJB2. Liquid crystal LC is enclosed between film ORI2 for IIORII for Lower part which set up direction of a liquid crystal molecule, and Upper part, it is seal part SL and the seal is carried out. Lower alignment film ORII is formed in the upper part of protective film PSVI by the side of lower clear glass board SUBl. On the surface inside top clear glass board SUB2 (liquid crystal side), . provided by light-shielding film BM. color filter FIL, protective film PSV2, transparent-in common picture electrode (COM) ITO2, and film ORI2 for Upper part laminating successively -- this liquid crystal display forms separately each layer by the side of lower clear glass board SUBl and top clear glass board SUB2. Then, up-and-down clear glass board SUBI and SUB2 are piled up, and a terminal area with silver paste SIL of drawer terminal DT provided on . lower clear glass board SOBl assembled by enclosing liquid crystal LC among both is removed, . to which transparent electric conduction IITE is provided in that portion, it pulls out with silver paste SIL via this transparent conductive film TE, and terminal DT is connected -- therefore. Although . drawer terminal DT which can carry out IlI Police of a connected state of silver paste SIL and the position by viewing from Inaccurate outside lower clear glass board SUB1 is Construction(ed) from two-layer Cr films g1 and d1, . by which a stage is attached to 21-l. Car film gl and d1 like illustration so that it may not carry out by the ability to cut off transparent conductive film TE -- again. Since opening oP is provided in light-shielding film BM which exists between silver paste SIL and top clear glass board SUB2, as for R Police, a connected state of silver paste SIL and a position are made by viewing from the outside of top clear glass board SUB2. the [ which Shape simultaneously when carrying out butter Ning after the pattern of opening OP carries out whole surface sputtering of the light-shielding film BM / . ] --C [ 2 ] figure, Since the connected state of silver paste SIL and a position can be checked at the time of the application of . which is a top view showing opening OP provided in light-shielding film BM, thus silver paste SIL, A position gap and a failure to attach of silver paste SIL can be prevented, the diameter of an application of silver paste SIL can be managed, the yield can be improved, and application process time can be shortened. .<<thin film transistor TFT> which can check the application state of silver paste SIL in the state of a product If thin film transistor TPT impresses positive bias to gate electrode GT, the channel resistance between sauce Dorain will become small, and if bias is made into zero, the channel resistance will operate so that it may become large. In a pixel, thin film transistor TPT of each pixel is divided into three (plurality), Each of . thin film transistor TPTI~TFT3 which comprises thin film transistor (division thin film transistor) T F T 1, TFT2, and TFT3 comprises same size (width is the same as channel length) substantially. Each of this divided thin film transistor TPTI~TFT3, It mainly comprises gate electrode GT, gate insulation lllGI, i type (genuineness, j.ntringic, and conducted type determination impurities of current are not doped) non-quality Si semiconductor layer As, a pair of sauce electrode SDI, and Dorain electrode SD2. Since sauce Dorain is originally decided by bias polarity in the meantime and the polarity is reversed during operation in the circuit of this display, sauce Dorain needs to understand that it is exchanged during operation. However, facilities top one side is fixed with sauce, and the following explanation also fixes another side with Dorain, and expresses. <<Gate electrode GT> gate electrode GT is shown in Drawing 4 (the 2A top view only describing layers g1, g2, and AS of the figure) in detail -- as . gate electrode GT Construction(ed) in shape projected from scanning signal wire OL perpendicularly (the setting toA [ 2 ] figure and Drawing 4 above) (it has branched in the shape of T shape), Construction of each gate electrode GT of . thin film transistor TPT1~TFT3 Construction(ed) so that it may project to each Shape field of thin film transistor TPT1~TFT3 is carried out at one (as a common gate electrode). . gate electrode GT Shape(ed) succeeding scanning signal IIIAGL, The . 1st electric conduction film g1 constituted from A construction electric conduction film gl of a monolayer is Form(ed) by film thickness about 1000 [A] using a chromium (Cr) film Form(ed), for example by sputtering so that a large level difference may not be made in a Shape field which is thin film transistor TPT. this gate electrode GT -- the -- the [A / 2 / figure and ] -- it is formed in an eye thicker than it so that semiconductor layer As may be covered completely, as shown inB [ 2 ] figure and Drawing 4 (in view of a lower part). Therefore, when back lights BL, such as a fluorescent light, are attached under the substrate SUBI, this opaque Cr gate electrode GT serves as a shadow, back light light does not strike upon semiconductor layer As, but the electric conduction phenomenon by light irradiation, i.e., OFF characteristic degradation of TPT, becomes difficult to occur in it. The original size of gate electrode GT has width indispensable (also including a part for the position Matching margin of a gate electrode and a sauce Dorain electrode) to straddle between sauce Dorain electrodes SDI and SDZ, The depth length which determines channel @W is decided by into how many factor W/L which determines a ratio with 1l. (channel length) of Distance L between sauce Dorain electrodes, i.e., mutual conductance gl, is made. If it thinks only from the gate of . gate electrode GT made larger than the original size mentioned above as well as the size of the gate electrode in this example, and the functional side of shading, aluminum which could form a gate electrode and its wiring GL in one in the single layer, and made Si contain as an opaque electric conduction material in this case, .<<scanning signal wire GL> above-mentioned scanning Signal gland GL which can choose aluminum etc. which made pure aluminum. and Pd contain, . Construction(ed) by the composite membrane which consists of 2nd electric conduction 1gg2 provided in 1st electric conduction wAg1 and its upper part -- A construction electric conduction film gl of this scanning signal wire GL, The . 2nd electric conduction film g2 which it Form by the same manufacturing process as 1st Guiding ?! film g1 of the above-mentioned gate electrode GT, and is Structure(ed) by one is Shape(ed) by about one 2000~4GQOCA film thickness, for example using aluminum (A!) l Form(ed) by sputtering. The 2nd electric conduction film g2 reduces the resistance of scanning signal IGL, and it is Construction(ed) so that improvement in the speed (improvement in the write-in characteristic of the information on a pixel) of signal transfer speed can be attained. As for ., i.e., scanning signal wire GL, from which scanning signal wire GL constitutes small the width dimension of the 2nd electric conduction film g2 compared with the width dimension of the 1st electric conduction film g1, the level difference shape of the side wall is loose. <<Gate dielectric film GI Insulating film Gl in which insulating film GI is used as each gate dielectric film of thin film transistor TPTI~TFT3, . insulation film GI Form(ed) by the upper layer of gate electrode GT and scanning signal wire GL, For example, .<<semiconductor layer AS>i type semiconductor layer AS which Shape by the film thickness about 3000C person] using the silicon nitride film Form(ed) with plasma CVD, .i type semiconductor layer As used as each channel forming region of thin film transistor TPTI~TFT3 divided into plurality as shown in Drawing 4, . which forms by the amorphous silicon film or a polycrystalline silicon film, and Shape by the film thickness about about 1800 [A] -- this i type semiconductor layer AS, A part for Commandment of distributed gas is changed and it is the same plasma CVD device succeeding Shape of Si, N, and gate dielectric film GI, And bottom board SUB1 is taken out from a CvD device outside after an appropriate time [ . ] .* Form(ed) without exposing outside from the device and N ゝlayer do (theB [ 2 ] figure) which doped P for ohmic contact are similarly Form(ed) by the thickness of abbreviation 400[person Co continuously, photograph processing art -- N+ layer dO and i layer As -- the -- the [A / 2 / figure and ] -- butter Ning is carried out on the island which became independent as shown inB [ 2 ] figure and Drawing 4. i type semiconductor layer AS -- the . provided also among both of the intersection (crossover part) of scanning signal wire GL and picture signal line DL as shown inA [ 2 ] figure and Drawing 4 in detail -- this intersection i type semiconductor layer As, .<<sauce Dorain electrode SDI constituted so that the short circuit of scanning signal wire OL and picture signal line DL in an intersection may be reduced, Each sauce electrode SDL and Dorain electrode SD2 of thin film transistor TPTI~TFT3 divided into SD2> plurality, the -- the [A / 2 / figure and ] --B [ 2 ] figure and Drawing 5 (the 2A top view only describing layer d1~d3 of the figure) show in detail -- as From the lower layer side in contact with Nゝ type semiconductor layer dO, each of . sauce electrode SD1 which is isolated, respectively and is provided on semiconductor layer As, and Dorain electrode SD2 makes it pile up a 1st electric conduction film d king, the 2nd electric conduction film d2, and each other's 3rd electric conduction film d3 one by one, and is Construction(ed). The 1st electric conduction film d1, the 2nd electric conduction film d2, and the 3rd electric conduction film d3 of sauce electrode SDI are Form(ed) by the same manufacturing process as each of Dorain electrode SD2. The 1st electric conduction film d1 is formed using the chromium membrane which Shape(ed) by sputtering by the film thickness (this example film thickness about 600 [:A]) of 500~1000 [lambda]. Since stress will become large if film thickness is Form(ed) thickly, chromium membrane is Shape(ed) in the range which does not exceed the film thickness about 2000 [A]. The contact of chromium membrane with N4'' type semiconductor layer do is good. Chromium membrane Structure seven layers of what is called Paris that prevents the aluminum of the 2nd electric conduction film d2 mentioned below from being spread in N+ type semiconductor layer do. As the 1st electric conduction film d1, it is a high melting point metal (Mo, Ti, Ta+W) film besides chromium membrane, After carrying out butter Ning of the . 1st electric conduction film d1 which may Shape by a high melting point metal Thilly Said (MoSi, TiSi, TaSi, WSi) film by photograph processing, N" layer do is removed by the same mask for photograph processing by using the certain 1st electric conduction film d1 of 1 Yo as a mask. that is, . from which, as for N+ layer dO which remained on i layer AS, portions other than 1st electric conduction film d1 are removed with a Selfa line -- although i and 117 i!A S also sleep together by that surface portion a little at this time since N+ layer do sleeps together so that parts for all that thickness may be removed The extent may control in dirty time. After an appropriate time, the 2nd electric conduction film d2 is sputtering of aluminum, and it is the film thickness of 3000~4000[ON Co (this example). . aluminum film Shape(ed) by about three 3000[ON film thickness has a small stress compared with chromium membrane, can be Form(ed) to thick film thickness, and it is constituted so that the resistance of sauce electrode SDI and Dorain electrode SD2 and picture signal line DL may be reduced. As the 2nd electric conduction film d2, they are silicon (Si) and copper (Cu> may be Shapeed by the aluminum film made to contain as an additive.) besides an aluminum film. The 3rd electric conduction film d3 of after patterning by the photograph processing art of the 2nd electric conduction film d2 is Form(ed). This 3rd electric conduction film d3 is Form(ed) by Mischief and 1000~2000 [A film thickness (this example 1200[film thickness about person Co) from the transparent conductive film (Induim-Tin-Oxide I TO: Nesa membrane) Shape(ed) by sputtering. This 3rd electric conduction film d3 Construction sauce electrode SDI and Dorain electrode SD2 and picture signal 410L, and it Structure transparent picture electrode ITOI. Each of the 1st electric conduction film d1 of sauce electrode SDI, and the 1st electric conduction film d1 of Dorain electrode SD2, The 1st electric conduction film [ in / it is. got blocked and / these portions ] d1 which has entered inside greatly compared with the upper 2nd electric conduction film d2 and the 3rd electric conduction film d3 (to inside of a channel field), Sauce electrode SD1 constituted so that gate length L of thin film transistor TPT can be specified independently [ layers / d2 and d3 ], As mentioned above, . sauce electrode SDI connected to transparent picture electrode ITOI is Construction(ed) in accordance with the level difference shape (N the film thickness of the 1st electric conduction film g1, level difference equivalent to the film thickness adding ten layers of the film thickness of do and the film thickness of i type semiconductor layer AS) of i type semiconductor layer AS. The 1st electric conduction film d1 by which sauce electrode SDI was specifically Form(ed) in accordance with the level difference shape of i type semiconductor layer AS, It comprises 2nd electric conduction film d2 which Shape(ed) the side connected with transparent picture electrode ITOI at the upper part of this 1st electric conduction film d1 compared with it in small size, and 3rd electric conduction film d3 connected to the 1st electric conduction film d1 which is exposed from this 2nd electric conduction film. Since chromium membrane of the 1st electric conduction film di cannot Form thickly from increase of stress and level difference shape of i type semiconductor layer A S cannot be overcome, the 2nd electric conduction film d2 of sauce electrode SD1 is Construction(ed) in order to overcome this i type semiconductor layer AS. That is, the 2nd electric conduction film d2 is improving step power A village by forming thickly. Since the 2nd electric conduction film d2 can be Shape(ed) thickly, it has been greatly contributed to reduction of the resistance (the same may be said of Dorain electrode SD2 or picture signal aDL) of sauce electrode SDI. Since level difference shape resulting from i type semiconductor layer AS of the 2nd electric conduction film d2 cannot be overcome, the 3rd electric conduction film d3 is constituted so that the size of the 2nd electric conduction film d2 may be connected to the 1st electric conduction film di exposed by making it small. Since the level difference shape of the terminal area between the 1st electric conduction film d1 and the 3rd electric conduction film d3 having not only good adhesiveness but both is small, it is certainly connectable. <<Picture electrode ITOI> Above-mentioned transparent Pixel electrode work TOI is provided for every pixel. One side of a picture electrode of a liquid crystal display section is Structure(ed). Transparent picture electrode ITO1 is divided into three transparent picture electrodes (division transparent picture electrode) El, E2, and E3 corresponding to each of thin film transistor TPTI~TFT3 divided into the plurality of the pixel. Transparent picture electrode El-E3 is respectively connected to sauce electrode .S D 1 of thin film transistor TPT. Butter Ning of each of transparent picture electrode E1~E3 is carried out so that it may become the same area substantially. Thus, 1-pixel thin film transistor TPT is divided into a plurality of thin film transistor TPT1~TFT3, Each of transparent picture electrode E1~E3 divided into plurality is connected to each of thin film transistor TPTI~TFT3 divided into this plurality, Even if the divided part (for example, TFT1) becomes a point defect, by that which will be no longer a point defect if it sees by the whole pixel (TFT2 and TFT3 are not defects), the probability of a point defect can be reduced and a defect can be made hard to see. Each liquid crystal capacity (Cpix) Construction(ed) by each of transparent picture electrode E1~E3 and transparent-in common picture electrode ITO2 can be made uniform by Structure(ing) substantially each of transparent picture electrode E1~E3 by which the above-mentioned pixel was divided in the same area. <<Protective film PSVI> Keep v1 film PSVI is provided on thin film transistor TPT and transparent picture electrode ITol. Protective film PSVI is mainly Shape(ed) in order to protect thin film transistor TPT from humidity etc. High moreover, transparency uses a damp-proof good thing. Protective film PSVI is Form(ed) by an oxidization silicon film and a silicon nitride film which Shape(ed) with plasma CVD, for example. In the light-shielding film BM> top <<board SUB2 side formed by the film thickness about 8000[ON Co, Cover film BM is provided and it is considered as a pattern as shown in hatching of Drawing 6 so that external light (theB [ 2 ] figure light from the upper part) may not enter into i type semiconductor layer AS used as channel form A region. Drawing 6 -- the . light-shielding film BM which is a top view only describing ITO membrane layer d3 inA [ 2 ] figure, filter layer FIL, and light-shielding film BM, For example, the cover nature to light is high, it is formed by an aluminum film, chromium membrane, etc., and chromium membrane is Form(ed) by sputtering in this example by the film thickness about 1300 [A]. Common semiconductor layer AS of TPTI~3 is made into a sand inch by gate electrode GT of light-shielding film BM which exists up and down, and a thick eye, and external available light and back light light stop therefore, as for the portion, hitting. As the hatching portion of Drawing 6 shows light-shielding film BM, it Form around a pixel, that is, light-shielding film BM is Form(ed) in the shape of a lattice (black matrix), and a 1-pixel effective display field is divided with this lattice. Therefore, the outline of each pixel carries out clearly by light-shielding film BM, and contrast improves. That is, shading wl4BM has two functions of shading and the black matrix to semiconductor layer AS. A back light can be attached to the SUBZ side and SUBI can also be carried out the wt Police side (external exposure side). <<Common electrode ITO2> Transparent-in common picture electrode ITO2 counters transparent picture electrode ITOI provided in the lower clear glass board SUBi side for every pixel, and the optical state of a liquid crystal answers and changes to the potential difference (electric field) between each picture electrode ITOI and common electrode ITO2. This transparent-in common picture electrode ITO2 Structure so that common voltage vcolIl may be impressed. .<<color filter FIL> which is the middle potential of Slanting voltage V d win of the low level on which common voltage Vcom is impressed to picture signal line DL, and high-level Shame voltage V d max Color filter FIL colors dye the dyeing substrate Form(ed) with resin materials, such as an acrylic resin, and is Construction(ed). Color filter FIL is Form(ed) in the shape of a dot for every pixel by the position which counters a pixel (Drawing 7), It is dyed in various colors (Drawing 7 is a thing only describing the 3rd electric conduction film of Drawing 3, and ld3 and color filter layer FIL, and each filter of .R, G, and B has given the hatch of 45@ 135 * and crossing, respectively). Color filter FIL is Shape(ed) by the thick eye so that all the picture electrodes ITOI (El-E3) may be covered, as shown in Drawing 6, . color filter FIL currently formed inside the edge part of picture electrode ITOI so that light-shielding film BM may overlap with color filter FIL and the edge part of picture electrode ITO1, . which can be formed as follows -- a form threat and photolithographic technique remove dyeing substrates other than red filter type A region for a dyeing substrate on the surface of top clear glass board SUB2 first. Then, green filter G and blue filter B are sequential-form-Some(ed) by dyeing a dyeing substrate with red dye, performing adherence processing, and giving . which Form red filter R, next the same process. . protective film PSV2 provided in order that protective film PSV2 may prevent the dye dyed in various colors in a color which is different in the above-mentioned color filter FIL from leaking to liquid crystal LC is Form(ed) with transparent resin materials, such as an acrylic resin and an epoxy resin, for example. <<Pixel arrangement>> As shown in Drawings 3 and 7, multiple each pixels of the above-mentioned liquid crystal display section are arranged in the same column direction as the direction where scanning signal wire OL extends, and are Construction(ing) each of pixel sequence Xi, X2, X3 and X4, and ... Each pixel sequence X1, X2, X3, and X4 and each pixel of ... constitute identically the locating position of thin film transistor TFT1~TFT3 and transparent picture electrode E1~E3. That is, odd-pixel sequence Xi, X3, and each pixel of ..., . odd-pixel sequence Xi which is Construction(ing) left-hand side and the locating position of transparent picture electrode E1~E3 on right-hand side for the locating position of thin film transistor TPTI~TFT3, X3, even-pixel sequence X2 of the next door for each whereabouts of ..., and X4. ... each pixel, It comprises odd-pixel sequence Xi, X3, and a pixel that turned each pixel of ... by line symmetry on the basis of the extending direction of the above-mentioned picture signal line DL. That is, pixel sequences X2 and X4 and each pixel of ... constitute right-hand side and the locating position of transparent picture electrode E1~E3 for the locating position of thin film transistor TPT1~TFT3 on left-hand side. And pixel sequences X2 and X41 .. To each pixel of pixel sequence X 1, X 3, and ..., a column direction is made to carry out half a pixel interval movement, and each pixel is arranged (shifting). That is, if each pixel interval of li matter sequence X is set to 1.0 (1.0 pitch), it is pixel sequence X of the next step, Picture signal line DL which extends for whereabouts between . each pixel which set each pixel interval to 1.0 and is shifted to the column direction to pixel sequence X of the preceding paragraph as for a 0.5-pixel interval (0.5 pitch), between each pixel sequence X, it is shown in . Structure(ed) so that it may extend in a half a pixel interval part (0.5 pitch) column direction, as a result Drawing 7 -- as The pixel (for example, pixel in which red filter R of pixel sequence X, was formed) by which the predetermined colored filter of pixel sequence X of the preceding paragraph was Form(ed), and the pixel in which the same colored filter of pixel sequence X of the next step was formed (For example, pixel by which red filter R of pixel sequence X4 was Shape(ed)) 1.5-pixel interval (1.5 pitches) isolation is carried out, and color filter F Engineering L of RGB serves as triangle arrangement. Since the triangle arrangement structure of RGB of color filter FIL can improve the mixed colors of each color, it can improve the resolution of a color picture. since only the amount of half a pixel interval extends in a column direction between each pixel sequence X, a picture signal and iiDL adjoin -- picture signal line DL To intersection will not be carried out. Therefore, leading about of picture signal line DL can be eliminated, and the occupation area can be reduced, and the detour of picture signal line DL can be eliminated, and multilevel interconnection structure can be abolished. The <<whole display panel equivalent circuit>> The equivalent circuit of this liquid crystal display section device is shown in Drawing 8. XiB and Xi+IB whose XiG, Xi+IG, and ... are picture signal lines DL connected to the pixel in which green filter G is formed, and ... are picture signal lines DL connected to the pixel in which blue filter B is formed. Xi+lR, Xi+2R, and ... are picture signal lines DL connected to the pixel in which red filter R is formed. These picture signal lines DL are scanning signal wires GL which choose . chosen by picture signal Pulling circuit, and pixel sequence X1 which Yi shows in Drawings 3 and 7. Similarly, each of Yi+1, Yi+2, and ... is pixel sequences X2 and X3 and scanning signal wire qL which chooses each of ... These scanning signal wires GL are connected to the perpendicular scanning circuit. <<Structure of addition capacity C add>> In the end connected with thin film transistor TPT, and the end of the side opposite to, it is refracted in the shape of an L character, and each of transparent Pixel electric IE1~E3 is formed so that it may overlap with the next scanning signal wire GL. this superposition -- the -- each of transparent picture electrode E1-E3 is set to one electrode PL2, and retention volume element (electric capacity element) Cadd which sets next scanning signal wire OL to electrode PL1 of another side is Construction(ed) so that clearly also fromC [ 2 ] figure. The dielectric film of this retention volume element C add is Structure(ed) in the same layer as insulating film GI used as gate dielectric film of thin film transistor TPT. Retention volume C add is formed in the portion of gate line GL which expanded the 1st layer of the width of g1 so that clearly also from Drawing 4. In the part between each of transparent picture electrode E1~E3 and the capacity electrode line (g1) which are piled up in order to Precaution . retention volume element C add made thin in order that layer g1 of the portion which intersects the Dorain line DL may make small probability of a short circuit with the Dorain line, The island field Construction(ed) by the 1st electric conduction film d1 and the 2nd electric conduction film d2 is provided so that transparent picture electrode ITOI may not be disconnected, when overcoming level difference shape like the above-mentioned sauce electrode SD1. This island field is Structure(ed) as small as possible so that area (numerical aperture) of transparent picture electrode IT01 may not be fallen. <<the equivalent circuit and operation of addition capacity C add>> -- the -- in . figure 9 which shows the equivalent circuit of the pixel shown inA [ 2 ] figure in Drawing 9 -- Cgs -- gate electrode GT of thin film transistor TPT, and sauce it -- it is the parasitic capacitance Shape(ed) very much between SD1. The dielectric film of parasitic capacitance Cgs is insulating film GI. C pix is liquid crystal capacity Form(ed) between transparent picture electrode ITOI (PIX) and transparent-in common picture electrode ITO2 (COM). The dielectric films of liquid crystal capacity C pix are film ORII for liquid crystal LC and protective film psv1 and Arrangement, and ORI2. ■ 1c is middle point potential. When TPT switches, the above-mentioned retention volume element C add works so that the influence of gate electrical change deltaVg to middle point potential (picture electrode potential) Vlc may be reduced. When this situation is denoted by a formula, it is deltaV lc== (set to Cgs/ (Cgs+Cadd+Cpix)} Xdeltavg.). deltaVlc expresses a changed part of the middle point potential by deltaVg here. Although this change part deltaVlc causes Direct current or minute added to a liquid crystal, the more it enlarges retention volume C add, the more that value can be made small. Retention volume C add also has the operation which lengthens electric discharge time, and accumulates the video information after TPT turns off for a long time. The reduction of Direct current or minute impressed to liquid crystal LC can improve the life of liquid crystal LC, and can reduce what is called printing in which a front picture remains at the time of the change of wR Crystal display screen. As mentioned above, the overlap area of gate electrode GT of part [ to be enlarged as / cover / semiconductor layer AS / completely ] and sauce Dorain electrode SD1 and SD2 increases, Therefore, parasitic capacitance Cgs becomes large and the opposite effect of becoming easy to be subject to the influence of gate (scan) signal Vg produces middle point potential Vlc. However, retention volume of the . above-mentioned retention volume element C add which can also cancel this demerit by providing retention volume C add, From the write-in characteristic of a pixel, it sets to the value about 8~32 times (8, Cgs<Cadd<32, and Cgs) to 4~8 times (4 and Cp.Lx< Cadd<LCpix) and superposition capacity Cgs to liquid crystal capacity C pix. <<Addition capacity Caddl! Connection method of polar Scanning signal wire GL (or scanning signal wire OL of the first rank) of the final stage used only as a capacity electrode line is connected to transparent-in common Pixel electric tilfh (V con) ITO2 as shown in Drawing 8.>> transparent-in common picture electrode ITO2 -- the -- as shown inB [ 2 ] figure, it is connected to external The 1 appearance wiring by silver paste material SL in the edge part of a liquid crystal display. And some electric conduction layers (gl and g2) of this external drawer wiring are Construction(ed) by the same manufacturing process as scanning signal wire GL. As a result, capacity electrode line OL of a final stage can connect easily [ transparent-in common picture electrode ITO2 ]. Or as the dotted line of Drawing 8 shows, capacity electrode line GL of a final stage (first rank) may be connected to scanning signal wire GL of the first rank (final stage). This connection can be made by the internal wiring in a liquid crystal display section, or external drawer wiring. <<Direct-current part offset by an addition capacity C add scanning signal>> This liquid crystal display, based on the direct-current offset method (DC cancellation method) indicated to Japanese Patent Application No. No. 95125 [ 62 to ] for which the applicant for this patent applied previously, it is shown in Drawing 10 (time chart) -- as A part for DC weapon further added to liquid crystal LC can be reduced by controlling the Parking voltage of scanning signal wire DL. Scanning signal wire OL's drive voltage with vi arbitrary in Drawing 10, Fight voltage V d min and Vdd of the low level on which *Vee whose Vi+1 is the drive voltage of scanning signal wire OL of the next step is impressed to scanning signal IGL is high-level Fight voltage V d lllax impressed to scanning signal wire GL. Voltage change part deltaV D~deltav4 of middle point potential Via (refer to the 9th figure) in each time 1=1 D~t. is as follows. 1=11: deltaV, = :-(Cgs/C) -V2 t=ja: It begins to be deltaV and =+(Cgs/C)'(V1+V2)-(C add/ C) -V 21=13:deltav, =1(Cgs/C), V1+(cadd/C), and(V1+V2) 1=14:deltav, and ==- (Cadd/C) and V 1, capacity [ of the sum total of a pixel ]: -- C = Cgs+Cpix+Cadd -- if the Riot voltage impressed to scanning signal wire OL comes out enough and there is here (the following (refer to notes 1) and direct-current voltage added to liquid crystal LC) Since it is set to (Cadd-V 2 - Cgs-V 1) deltaV and +deltaV4= / C, if Cadd and ■2 = Cgs-V 1, the direct-current voltage added to liquid crystal LC is set to O.

[Note]

Although a scan and a changed part of ivi affect middle point potential Vlc at time t and t2, the potential concerning . liquid crystal by which middle point potential v1c is made the same potential as picture signal potential through signal wire Xi during t2~t3 (sufficient writing of a picture signal) is mostly determined with potential immediately after TPT turns off (>. in which a TPT OFF period is overwhelmingly longer than an ON period -- therefore) As for the calculation concerning a liquid crystal flowed in one direction, the influence of ti~t and the time of Transient [ in / Is almost disregard can be carried out and / the potential immediately after OFF of TPT, i.e., time t3, and t. ] may be considered during the period. (., i.e., a direct-current offset method, by which polarity reverses picture signal Vi for every frame or every line, and a part by the picture signal itself flowed in one direction is made zero) A fallen part by drawing in of middle point potential Vlc by superposition capacity Cgs can be pushed up with the drive voltage by which retention volume element C add and scanning signal wire OL (capacity electrode line) of the next step are impressed, and the direct-current ingredient added to liquid crystal LC can be made very small. As a result, the liquid crystal display can improve the life of liquid crystal LC. Of course, when gate GT is enlarged in order to achieve shading effect, the value of retention volume Cadd may be enlarged in connection with it. As mentioned above, as for the present invention, although the invention made by this artificer was concretely explained based on the above-mentioned example, it is needless to say for it to be able to change variously in the range which is not limited to the above-mentioned example and does not deviate from the gist. For example, the shape of the terminal area of silver paste SIL and transparent-in common picture electrode ITO2 and the terminal area of silver paste SIL and transparent conductive film TE is not limited to the above-mentioned example, but various change is possible for it. Naturally it may not be a silver paste or other electric conduction pace 1~ and an electric conduction object may be sufficient, and neither a common electric conduction film nor a drawer terminal may also be limited to this, but other electric conduction films may be sufficient as it. When opaque films, such as light-shielding film BM, do not exist between silver paste SL and top clear glass board StJB2, opening oP does not need to provide. Although this example showed the reverse Stagger structure of gate electrode type Some -> gate-dielectric-film type Some -> semiconductor layer type Some -> sauce Dorain electrode type Some, the present invention is effective . [effect of an invention] also at the Stagger structure where the hierarchical order or the turn to make is contrary to it. As explained above, since the connected state of electric conduction objects, such as conductive paste for pulling out the picture electrode provided on the top transparent substrate to a lower transparent substrate, a position, etc. can check by viewing, reliability can be improved with the liquid crystal display of the present invention.

[Brief Description of the Drawings]

The sectional view of a liquid crystal display section in which Drawing 1 (A) shows the 1st example of Structure of the present invention, and Drawing 1 (B), The part plan of Drawing 1 (A), and Drawing 1 (C), the [ the top view of a liquid crystal display section showing the 2nd example of Construction of the present invention, and ] --A [ 2 ] figure, the [ the important section top view showing the stroke matter of the liquid crystal display section of the color liquid crystal display of the active matrix system which is Example I of the present invention, and ] --B [ 2 ] figure, the [ above-mentioned ] -- the [ the sectional view of the portion cut with ■B-IIB cutout line ofA / 2 / figure, and a seal part circumference part, and ] --C [ 2 ] figure, the [ the top view showing the opening provided in the light-shielding film, and ] --D [ 2 ] figure, The sectional view in the nc-nc cutout line of the 2nd the A figure, and Drawing 3, the [ above-mentioned ] -- the important section top view of the liquid crystal display section which has arranged multiple pixels shown inA [ 2 ] figure, and Drawings 4 or 6, the [ above-mentioned ] -- the top view only describing the predetermined layer of the pixel shown inA [ 2 ] figure, and Drawing 7, The important section top view in the state where the picture electrode layer and color filter layer which are shown in above-mentioned Drawing 3 were piled up, Drawings 8 are a representative circuit schematic showing the liquid crystal display section of the color liquid crystal display of an active matrix system, and Drawing 9, the -- time CharI- which shows Poling voltage of the scanning signal wire according [ the representative circuit schematic of the pixel indicated inA / 2 / figure and Drawing 10 ] to a direct-current offset method, and Drawing 11 are sectional views of the end of the conventional liquid crystal display section. The inside of a figure, SEngineeringL ... A silver paste, transparent conductive film .. TE, DT ... Drawer terminal, BM ... A light-shielding film, OP ... An opening, SUB ... Clear glass board, GL ... A scanning signal wire, DL ... A picture signal line, GI ... Insulating film, GT ... A gate electrode, an AS...i type semiconductor layer, .S D ... A sauce electrode or Dorain electrode, PS■ [ ... A thin film transistor, ITO / ... A transparent electrode, gyd / ... An electric conduction film, C add / ... A retention volume element, Cgs / ... Superposition capacity, C pix / ... It is liquid crystal capacity (the subscript of the number after an English character omits). ] ... A protective film, LS ... A light-shielding film, LC ... A liquid crystal, TPT