Method and device for forming thin film of inorganic polymer and applied product thereof

[Detailed Description of the Invention]

[Industrial Application] The present invention relates to the polymers metal oxide by a new sol gel reaction or the formation method of the thin film, and the various uses that use the thin film. [Description of the Prior Art] It is conventionally related with the formation method of an oxide thin film, and they are journal-on vacuum Science Technology A, the 1st volume, No. 3 (1983), and 1362nd page ~ the 1366th page (J, Vac, Scj, TechnoT, A.). Vow, No, 3 (1983), the sputtering method and journal-on electrochemical Society that are the physical forming-membranes methods as shown in pp1362-1366, 120 volumes, (1973), 927page~ (J, E], ectrochem, Soc, and 120 (1973)) The chemicals vapor phase growth (the Chemical Vapor Deposition method: CVD method) which is chemical forming-membranes method 1- as shown in pp927~ is known. In the sputtering method, after using metal for the high frequency sputtering method and target which use an oxide for a target and forming a metal thin film, there are a method of carrying out thermal oxidation and the method of forming an oxide thin film by the reactant sputtering method (A r+02 grade is used for sputtering gas). On the other hand, as a CVD method, there are a heat CVD method which uses metal chloride for base material, an optical CVD method which carried out the eye mucus of the membrane formation at low temperature more these days and which are looked at by JP,61-190074,A, etc. As a chemical forming-membranes method, they are a material research Society symposium proceeding and 73 pages [ 725 ] (1986) ~ 730 pages (Mat, Res, Symp, Proc, and 73 (1986)). The sol-gel method which is a kind of a liquid phase method as shown in pp725~730 attracts attention as a low-temperature forming-membranes method recently. Others, JP,62-97151,A, a 53-149281 gazette, etc. are known. It is alpha-hydronalium Xishoke 2 to various silicon analogues. It is considered as the meshes-of-a-net structure which makes it react in addition to a photoactivation catalyst like A, and has three-dimensional crossing linking, and also crossing linking is increased and stiffened by light irradiation, and there is the method of forming membranes. (The XIV time International Congress-on glass and (1,986) rhoP429-436 (X IVIntl, Congr, on Glass (1986) pp429~436).) Although it differs from membrane formation, ultraviolet curing resin is irradiated and the art which manufactures the solid model of an organic matter is known (Nikkei, Net++, Materjals, the June 5, 1989 item, pp45~51). After mixing the organic acid salt of Alkoxide of a rare earth metal and alkaline-earth metals, and copper, and beta-diketone complex, applying and drying, it irradiates with ultraviolet rays and infrared rays, decomposition and oxidization are performed, and there is the method of producing a compound metal oxide (JP,64-87780,A). Using reactant Silang and metal ester, it irradiates with ultraviolet rays and there is also the method of producing a surface protection film (U, S, Patent, 4,073,967). [Problem(s) to be Solved by the Invention] The sputtering method is a method of forming membranes under a high vacuum among the above-mentioned conventional technologies, a film with many oxygen defects generates and the film of chemicals stoichiometry composition is not obtained. The argon gas etc. which are used as sputtering gas remained easily in the film, and there was a fault that this oxygen defective portion and residual gas had a bad influence on the characteristic of an oxide thin film. In a heat CVD method, in order to hydrolyze the metal halogenation thing which is base material and to obtain a metal oxide film, the high temperature more than 600 degreeC is required. Although an optical CVD method exploits light energy for the decomposition reaction of base material and it tries to perform thin film formation at low temperature more, all reaction energies with oxygen after disassembly of base material and decomposition cannot be given with light energy, but heat grant is required and heating of a substrate is needed. Although the growth rate of an oxide thin film increases by this method, membraneous quality is the same as that of the case where it does not irradiate with light. Since the process of heat grant in the method and CVD method which carry out after [ sputtering ] thermal oxidation was indispensable, the thin film formation to the substrate [ of an organic matter ] and substrate top with a big difference of a thermal expansion coefficient where heat-resistant temperature is low was difficult. The sputtering method and the CVD method had the problem that large area film attachment was difficult for the top where a large-scale device is required and a device is expensive. The sol-gel method which is a kind of a liquid phase method compounds inorganic polymer which is ceramics at the temperature near normal temperature or normal temperature on the basis of the chemical reaction in solution. However, in order to use metal Alkoxide which is a kind of an organic matter for base material, carbon remains easily in output. There were problems, like a reaction takes a long time. Although the method of carrying out membrane formation stress relief heat treatment is known, since heat is applied, the method of irradiating with ultraviolet rays after membrane formation too has a problem on which carbon remains. Even if carbon remains easily to the thin film after membrane formation and it irradiates with ultraviolet rays after that in the method which does not irradiate reaction solution excluding moisture, it is difficult to remove carbon. The thing of Okay. is a single layer film and the films produced with the old sol-gel method are a multilayer film and composite nu 15 at low temperature. - The method of obtaining a film is not known. Forming the composite membrane which has specified shape, and a multilayer film was not taken into consideration. The method of adding and carrying out light irradiation of the photoactivation catalyst to various Silang aims at making three-dimensional crossing linking increase by this, and removing an organic matter out of a film was not taken into consideration. It is the same even when using reactant Silang and metal ester. Since it was mere mixture when obtaining the material which made the organic compound distribute a metal oxide and harnessed both feature, homogeneity was not enough and there was a problem in the characteristic acquired. The object of the present invention is to solve the problem which the CVD method as the above-mentioned physical forming-membranes method and the chemical forming-membranes method and the conventional sol-gel method have. That is, it is in obtaining a polymers metal oxide thin film with good chemicals stoichiometry composition for a short time, and making film attachment of a large area possible with a simple device, without needing hot heat treatment. It is in obtaining a multilayer film and a composite membrane by the means mentioned above. Branch It is in providing the formation method in the low temperature of the inorganic substance which has the predetermined shape which was not attained or inorganic matter/organic complex, the inorganic substance which has multilayer structure, or inorganic matter/organic complex by the conventional method. Other objects of the present invention are a highly efficient thin film capacitor, an electroluminescence element, and its display by there being no necessity for heat treatment, obtaining a good oxide thin film, and applying this to electronic devices. It is in obtaining a semiconductor device and an optical disc. Other objects of the present invention are amorphous or to provide the anticorrosion metal member which forms a polymers metal oxide thin film in the metallic member surface, and it uses as an environment-resistant protective film. [Means for solving problem] The above-mentioned object is attained by the means of the present invention shown below. In the way the present invention forms an inorganic polymer thin film on a base from the solution containing the organic metallic compound and water of low-molecular quantity, It irradiates with the electromagnetic waves containing the ingredient which has a specific wavelength required for the above-mentioned solution in order to make combination with the metal atom of the organic metallic compound, and an organic group destroy, The formation method of an inorganic polymer thin film including the process which applies the solution of the process which promotes hydrolysis or Thiolins of the organic metallic compound, and makes pre polymer of a metal oxide or metallic sulfide form into the above-mentioned solution, and the pre polymer on the above-mentioned base, and it dries is provided. In the way the present invention forms an inorganic polymer thin film on a base from the solution which contains the organic metallic compound and water of low-molecular quantity again, It irradiates with the electromagnetic waves which contain the ingredient of a specific wavelength required for generation of the metalaw Xan combination between the metal atoms of the organic metallic compound in the above-mentioned solution, The formation method of an inorganic polymer thin film including the process which makes pre polymer of a metal oxide or metallic sulfide form by hydrolysis or Thiolins of the organic metallic compound into the above-mentioned solution, and the process which applies the solution of the pre polymer to the above-mentioned base, and it dries is provided. In the way the present invention forms an inorganic polymer thin film on a base from the solution containing the organic metallic compound and water of low-molecular quantity, It irradiates with the light energy which contains the light of a specific wavelength required for Condensation polymerization of the above-mentioned organic metallic compound in the above-mentioned solution, The formation method of an inorganic polymer thin film including hydrolysis or the process which promotes Thiolins and makes pre polymer of a metal oxide or metallic sulfide form into the above-mentioned solution, and the process which applies the solution of the pre polymer on the above-mentioned base, and it dries is provided. In the way the desirable mode of the present invention forms an inorganic polymer thin film on a base from the solution containing the organic metallic compound and water of low-molecular quantity, It irradiates with the light energy containing the light of a specific wavelength required in order to destroy combination with the metal atom of the organic metallic compound, and an organic group and to promote hydrolysis of the organic metallic compound while the process of applying the above-mentioned solution to base" 2, and the solution are in a damp or wet condition, It is related with the formation method of an inorganic polymer thin film including the process which makes pre polymer of a metal oxide form into the above-mentioned coat, and the process which exposes the coat to the atmosphere containing ozone, oxidizes the organic matter in a film, and decreases an organic matter. In and the method of forming an inorganic polymer thin film in base" 2 from the solution containing the organic metallic compound and water of low-molecular quantity according to other desirable modes, It irradiates with the light energy containing the light of a specific wavelength required in order to destroy combination with the metal atom of the organic metallic compound, and an organic group and to promote Thiolins of the organic metallic compound while the process of applying the -19 2 above-mentioned solution on a base, and the solution are in a damp or wet condition, It is related with the formation method of an inorganic polymer thin film including the process which makes pre polymer of metallic sulfide form into the above-mentioned coat, and the process which exposes the coat to the atmosphere containing hydrogen sulfide, sulfurates the organic matter in a film, and decreases an organic matter. In the way other modes of the present invention form an inorganic polymer thin film on a base from the solution containing the organic metallic compound and water of low-molecular quantity, The process of applying the above-mentioned solution on a base, the process of arranging the pattern mask which has a desired pattern on the solution, It irradiates with the light energy containing the light of a specific wavelength required in order to destroy combination with the metal atom of the organic metallic compound, and an organic group and to promote hydrolysis or Thiolins of the organic metallic compound while the solution is in a damp or wet condition via the pattern mask, 20 which makes pre polymer of a metal oxide or a sulfide form in the portion as which the above-mentioned coat was chosen - It is a formation method of a metal oxide thin film including a process, the process of removing the non-choosing portion of the coat from a base, and the process that exposes the pattern film which remained on the base to the atmosphere containing ozone or hydrogen sulfide, oxidizes or sulfurates the organic matter in a film, and decreases an organic matter. One or more substances chosen from the group which consists of metal Alkoxide, a metal beta-Ketoester complex, a metal beta-diketone complex, and metal Thioester as an organic metallic compound of low-molecular quantity are used. The above-mentioned solution can contain organic acid and alcohol. The above-mentioned electromagnetic waves are light energies, for example, ultraviolet rays. It is a laser beam. In the method of forming a metal oxide multilayer film on a base from the solution containing metal Alkoxide and water according to the mode of further others of the present invention, it is the above-mentioned solution, The light energy containing the light of a specific wavelength required in order to make combination with a metal atom and an organic group destroy is corresponded to each metal Alkoxide including at least two kinds of metal Alkoxide, The process which irradiates the above-mentioned solution one by one, and makes pre polymer of a metal oxide form into the above-mentioned solution, It irradiates with the light energy of a specific wavelength required in order to make the process and the above-mentioned coat which apply the solution of the pre polymer to the above-mentioned base generate ozone, and the formation method of a metal oxide multilayer film including the process of oxidizing and removing the organic matter in the above-mentioned coat is provided. The process of applying on a base the solution in which the present invention contains metal Alkoxide and water further, The process of irradiating with the light energy of a specific wavelength required in order to make combination with a metal atom and an alkoxy group destroying while the coating liquid is in a damp or wet condition, hydrolyzing the Alkoxide, and forming the precursor of inorganic polymer, The process of irradiating with the portion as which the position of a base and the source of irradiation was relatively moved, and coating liquid was chosen, and forming the predetermined pattern of the precursor on the base, and the pattern, It exposes to the atmosphere containing ozone, and it oxidizes, the organic matter in the precursor is removed, and the formation method of an inorganic polymer thin film including the process changed into the inorganic polymer which consists of metal oxides substantially is provided. The amounts of carbon are 0.01 thru/or 4atom%, and the metal polymer obtained by the present invention is amorphous inorganic polymer which consists of metal oxides substantially including a little C-H combination. The inorganic polymer thin film which is amorphous non-precious-metals polymer which the amounts of carbon of the metal polymer thin film by which decomposition start temperature was especially formed on the substrate which is below 200 degreeC below as for 300 degreeC are 0.01 thru/or 4atom%, and consists of metal oxides substantially including a little C-H combination by the present invention is obtained. In the complex which consists of a substrate and an inorganic thin film formed on it according to the present invention, The metal oxide thin film whose difference of the thermal expansion coefficient of a base and the thin film is inorganic polymer which consists of metal oxides substantially including C-H combination of a small quantity [ that those or more / 1 / with one and the thin film contain oxygen more than 85 atom % by chemicals stoichiometry composition in 5x10-6 and / amount / of carbon ] in 0.01 thru/or 4 atom % is obtained. Inorganic Po 23 which particle diameter contains oxygen more than 85 atom % with chemicals stoichiometry composition at 0.05 micrometer or less, and the amount of carbon becomes from a metal oxide substantially including a little C-H combination using the present invention by 0.01 thru/or four atom % - The compound composition object which Lima is distributing in organic polymers is acquired. It is a container if the solution which contains metal Alkoxide as an active ingredient although the present invention is carried out is put in, A specific wavelength required for the above-mentioned solution in order to make combination with metal and an alkoxy group destroy, A light irradiation device which irradiates with the light energy of a predetermined wavelength required for generation of metalaw Xan between metal-metal, or a specific wavelength required for Condensation polymerization of the above-mentioned metal Alkoxide, The metal Alkoxide solution processing unit provided with the monochrome meter which makes light which occurred from the light irradiation device the light mainly concerned with the above-mentioned specific wavelength can be used. By the present invention, the constituent for metal oxide thin film formation whose amount of carbon residue of pre polymer in the solution is below eight atom % is obtained from the solution which has alcohol, water, and metal oxide pre polymer. As a concrete example of application of the present invention, the polymers metal oxide insulation thin film more than 2 and 8 MV/cs is formed for electric strength between the above-mentioned base and the above-mentioned luminous layer in the electroluminescence element which equipped the base with the luminous layer, and it is 4. - There is an electroluminescence element which consists of inorganic polymer which Am and the thin film contain oxygen more than 85 atom % by chemicals stoichiometry composition, and the amount of carbon becomes from a metal oxide substantially including a little C-H combination by 0.01 thru/or four atom %. In addition, it consists of a polymers amorphous metal oxide thin film in the thin film capacitor formed in the base, The capacitor whose amounts of carbon residue of the above-mentioned thin film it has the oxygen content more than 85 atom % by chemicals stoichiometry composition, and/or are 0.01 thru/or 4atom%, A metallic member, wherein it has a polymers metal oxide thin film on the surface and the thin film has the oxygen content more than 85 atom %, and/or the amount of carbon residue of 0.01 thru/or 4 atom % by chemicals stoichiometry composition, Or in the display in which a transparent electrode, 1st insulating layer 1 luminous layer, the 2nd insulating layer, and a top electrode were formed one by one on the base, and the above-mentioned luminous layer was formed on the lattice, The above-mentioned transparent electrode, the 1st insulating layer, and the 2nd insulating layer are polymers metallization thing thin films, It consists of inorganic polymer which the thin film contains oxygen more than 85 atom % by chemicals stoichiometry composition, and the amount of carbon becomes from a metal oxide substantially including a little C-H combination by 0.01 thru/or 4 atom %, and can apply to the display driving on the voltage of 200 v or less. In the optical disc provided with the recording medium consisting of a polymers metal oxide on the transparent substrate, The above-mentioned metal oxide is a thin film, and there is application to the optical disc whose more than 85 atom % of chemicals stoichiometry composition of the above-mentioned metal oxide and/or above-mentioned amount of carbon residue the oxygen content of the thin film is 0.01 thru/or 4atom%. In order that the present invention may achieve the object of acquiring the composition object which has specified shape, The solution which makes metal Alkoxide an active ingredient is irradiated with the light of the wavelength corresponding to the binding energy of metal and an alkoxy group, an irradiation position is moved to it, predetermined shape is formed, and it irradiates with the light for making the formation thing obtained when required generate ozone in oxygen content atmosphere. The solution containing a plurality of ingredients may be sufficient even as a plurality of solution consisting of a single ingredient, and the solution which makes metal Alkoxide an active ingredient may contain the resin etc. to which a polymerization advances by light irradiation. In forming the organicity/mineral complex which has multilayer structure, it is made to include the resin etc. in which a polymerization advances by light irradiation as solution which forms an organic matter layer. The method of light irradiation is performed by controlling both movement of a formation object, movement of a light source or a formation object, and a light source. This method uses the feature that specified shape can be formed at low temperature with light energy, and forms an oxide film below heat-resistant temperature C of 300 degrees, or on a substrate with a large thermal expansion coefficient difference. Since the amount of C may be decreased by the light irradiation of the first step, the light irradiation of the second step can be processed in atmosphere where oxygen concentration is low. For this reason, the occurring ozone concentration can be pressed down low and the substrate damage to an organic matter board and a metal substrate can be pressed down. The metal oxide which has the specified shape formed by the present invention is made chemicals stoichiometry composition, and is the oxygen content more than 85 atom %, or the amount of carbon residue is below four atom %. The amount of carbon is 0.01~4-27=. It has C-H combination of atom %, and is amorphous. The device used for the present invention is installing monochrome meter in a light irradiating part so that it can irradiate with the light of a wavelength which accelerates the reaction of various metal Alkoxide and organic resin. The formation object acquired by the above-mentioned method is applicable to various electronic devices, an antireflection film, a wire rod, etc. The above-mentioned method can be used for the following uses. The electric strength between the base and the luminous layer of the electroluminescence element provided with the base and the luminous layer can use as a polymers metal oxide thin film more than 2.8 MV/sigma. It can use as a dielectric film of the thin film capacitor on a metal substrate and a printed circuit board or in a substrate. It can use as a polymers metal oxide thin film of the highly corrosion resistant metallic member surface. It can use for the 28 above-mentioned protective film of the integrated circuit device which has a protective film on the integrated circuit surface as a polymers metal oxide thin film. A transparent electrode, 1st insulating layer 9 luminous layer, the 2nd insulating layer, and a top electrode are formed one by one on a base, the above-mentioned luminous layer is formed on the shape of a lattice, and it can use for the above-mentioned transparent electrode, the 1st insulating layer, and the 2nd insulating layer of the display driven on the voltage of 200 v or less as a polymers metal oxide thin film. It can use as a polymers metal oxide thin film of the optical disc provided with the recording medium consisting of a polymers metal oxide on the transparent substrate. An antireflection film and a Heat wire reflection film are producible because the difference of a thermal expansion coefficient with an organic matter board and a film without heat resistance forms the polymers metal oxide multilayer film of the present invention on a small substrate. plastic light -- face -- it can use for the environment-resistant protective film of a bar as a polymers metal oxide thin film. The plastic molding of the Si chip can be protected and carried out by the inorganic film of the present invention, and a semiconductor device can be produced. [Function] The present invention is explained taking the case of metal Alkoxide. Metal Alkoxide is a substance denoted by general formula M (OR)n (M: metal, R:Alkyl machine, n:integer). Metal Alkoxide absorbs the energy of a reaction under existence of water, produces a hydrolysis reaction, and generates a compound with the structure where a part of alkoxy group denoted by (RO) n-zM OH was replaced by the hydroxyl group. Thus, it hydrolyzes partially, and the generated intermediate serves as a condensation product which comes to react to the metal alkoxide molecule of further others, and grows. A sol-gel method compounds inorganic polymer, i.e., an image ghost, on the basis of the above-mentioned chemical reaction, i.e., a hydrolysis reaction and a condensation reaction. In this sol gel reaction, it is said that the rate determining step of a reaction is cleavage of the metal-alkoxy group combination at the time of a hydrolysis reaction. It irradiates with electromagnetic waves, especially light energy which have a specific wavelength required for making solution which makes metal Alkoxide an active ingredient destroy metal-alkoxy group combination in the present invention. Therefore, metal-alkoxy group combination is cut alternatively, and a hydrolysis reaction which is a rate determining step of a sol gel reaction tends to be promoted, and it tends to be made to high-polymerization-ize, and is going to complete a sol gel reaction in chemicals stoichiometry composition conditions ideal as a metal oxide. As light energy, various laser besides ultraviolet rays is suitable. For example, as for helium -Cd laser, the Kr-F laser of 325rv generates light with a wavelength of 193 nm, as for 249-nm Ar-F laser. The thin film which formed membranes on the substrate using the above-mentioned reaction solution is irradiated with the light of the wavelength for generating ozone, By carrying out ozone oxidization of the organic matter which remains in small quantities in a film, the organic matter in a film is decreased further and to make the amount of oxygen in a membranous metal oxide into 85% or more of chemicals stoichiometry composition or the amount of carbon residue is made into 0.01~4 atom %. In particular, it is preferred from the characteristic to carry out the amount of oxygen and to make the amount of carbon residue more than 0.2 atom % 95% or less of chemicals stoichiometry composition. Such a film is obtained for a short time. By considering the process of the above-mentioned light irradiation into the solution in a sol gel reaction, the oxide thin film to which chemicals stoichiometry composition was equal at low temperature can be obtained. For this reason, the heat treatment for raising membraneous quality after film formation becomes unnecessary, and formation of the oxide thin film to the substrate top of the difference of substrates, such as resin 1 paper below 300 degreeC, or a thermal expansion coefficient with a big heat-resistant temperature is attained. Thus, the carbon content of the obtained oxide thin film is 0.01~4atom%. What a certain thin film was obtained as for more than 85 atom % of chemicals stoichiometry composition, and oxygen content excelled in the electrical property in composition MOx of an oxide is obtained. In the present invention, it is metal ThioesterM as a starting material (SR). In a Was used case, Thiolins happens under hydrogen sulfide existence. M(SR) n+X-Has->M(S H)x(S R)n-x+RS H -- if hydrogen sulfide is made to act on this further, polymer of metallic sulfide will be made. The hydrolysis reaction in a sol gel reaction. 1 If it replaces with a polymerization reaction and a Depart ester condensation reaction is used, the sol gel reaction in a nonaqueous solvent system will be attained. Co-condensation reaction using the organic acid shown below is used for a deesterification reaction. 11 +R-0-C-R' (M : R: Metal, R, Cn Hznj+) In the above-mentioned reaction, since a reaction advances in all the directions in the shape of three dimensions, inorganic polymer generates. By irradiating with the light energy which has a specific wavelength required in order to make metal-alkoxy group combination destroy, metal-alkoxy group combination is cut alternatively, and a reaction can be promoted, it can be made to be able to high-polymerization-ize, and the metal oxide near chemicals stoichiometry composition can be obtained. Moisture is not contained in the above-mentioned solution which irradiates with light energy, but can react to it by a nonaqueous solvent system. Therefore, since moisture is not contained in the obtained metal oxide, the application to the electronic device etc. from which moisture poses a problem has effective use of this method. Among the art which used light similarly, although reaction velocity improves, its decomposition reaction $ Heat grant of base material is indispensable, and it needs substrate heating at an optical CVD method. For this reason, membrane formation of a up to [ a substrate with a low heat-resistant temperature or the big substrate of the difference of a thermal expansion coefficient ] is difficult. Adding a photoactivation catalyst to various Silang, by the method to which three-dimensional crossing linking is made to increase by light irradiation, an organic chain-like compound generates a crossing linking part and it does not suit the object of the present invention of removing the organic matter in a film. It irradiates with the light of a specific wavelength required to generate ozone further to the film of the film formation and solution using making the device which forms the metal oxide thin film of the present invention polymers-ize more by promotion of the chemical reaction by the light irradiation in the state of solution, and its solution, The polymers metal oxide thin film obtained by being in carrying out oxidization removal of the organic matter in the film has high purity with few impurities, and the thing of composition near chemicals stoichiometry composition is obtained. The characteristic which was excellent in making high metal oxide pre polymer of Yo 35-Molecular weight form in the stage of the solution which has metal Alkoxide as a final metal oxide thin film is acquired. The light with which it irradiates into solution needs to consider it as a specific wavelength required for making combination with metal and an alkoxy group destroy, to consider it as a specific wavelength required for generation of the metalaw Xan combination between metal-metal, or to use the light of a specific wavelength required for Condensation polymerization of metal Alkoxide. Therefore, irradiating only with the light which has a specific wavelength can obtain target polymer in the form where purity is higher. If it irradiates with the light which has other wavelengths, things other than polymer of the molecule made into the object by the light of other wavelengths may be obtained, and what has high purity is not obtained. In the present invention, without passing through a special drying process by forming on a substrate the solution which carried out light irradiation, it is possible to carry out light irradiation to the film, therefore it can heighten the effect of the impurities removal in a film. Yo 36 which forms monochrome meter in a light irradiating part for irradiating with the light of this specific wavelength, and can irradiate only with the light of a specific wavelength - it carries out for obtaining. Therefore, irradiation of the light of the specific wavelength corresponding to the metal-alkoxide bond of various kinds of various metal Alkoxide is attained. Thereby, more effective light irradiation can be carried out to the sol gel reaction using various metal Alkoxide. If the present invention is used, the metal oxide thin film to which chemicals stoichiometry with little organic matter content was equal at low temperature will be obtained. This metal oxide thin film is a high capacity thin film capacitor, in order to show performance good as a dielectric and an insulator. A low-voltage Chungkin electroluminescence element, the good coating protective film of a resistance to environment, the protective film for semiconductor devices, the recording medium of an optical disc, the protective film for plastic optical fibers, the protective film for plastic lenses, the capacitor that formed membranes on the printed circuit board. It is suitable as a substrate for semiconductor loading which provided the metal oxide film on the polarizing plate for STN LCD, Cu, or Cu system alloy. For example, a quality product can be obtained, without it being applicable also to production of transparent electrode 141 shown in Drawing 26, and phase compensation board 146 grade, and moreover heat-treating, since low-temperature membrane formation is possible when this method is used for liquid crystal production. If strong directive laser is used for light irradiation, it is also possible to form the fine pattern of an oxide thin film on a substrate. Catalysts, such as acid and alkali, may contain in the sol gel reaction solution which performs light irradiation in this method. Reaction solution can be stably held by holding reaction solution at low temperature, and it can be considered as sol solution suitable for membrane formation by carrying out light irradiation at the time of membrane formation. Since the present invention irradiates with the light which has a specific wavelength to the solution containing metal Alkoxide, after being able to measure the degree of polymerization of metal Alkoxide in the stage of this solution and raising this degree of polymerization as much as possible, forming membranes to a base is the biggest feature from which the thing of high purity is obtained as a metal oxide thin film. It is also the big feature by investigating using the absorption spectrum of this solution, or a light scattering method that the product which could monitor the degree of polymerization of the metal oxide and where quality was stabilized is obtained. The present invention is effective to metal Alkoxide, a metal beta-Ketoester complex, a metal beta-diketone complex, or metal Thioester. There are the following about the concrete compound about beta-Ketoester complex and a beta-Zyke 1-A complex. beta-diketone complex is the compound in which the beta-Diketone R'= Alkyl machine made at least Arrangement metal (M) as follows. \ Ha In a proton, gap resonance phenomena set one here, the whole beta-Diketone is charged in e, and it is Arrangement 39 to metal at oxygen. - It is situated. The number of beta-Diketone which make at least Arrangement metal changes with metaled kind divalent numbers etc. Specifically, it is 4O. - Although RO is represented with a methyl group, it is the same at other Alkyl machines. It is the same in [ as beta-diketone complex ] character. Are concrete. R Can be cited. On the other hand, beta-Ketoester complex is the compound which at least Arrangement used as metal (M) in the form as the above-mentioned beta-Diketone with same beta-Gotoe alkyl machine. Can be cited. It is required to irradiate with the light which has a wavelength of the above-mentioned requirements to these reaction solution. This wavelength is suitably selected with a substance. It is preferred to mainly irradiate with light with a wavelength of 248 nm to Ti Alkoxide of lower A. Li0CHs, Na0CHa, and Ca(OCHa) 2 *Ba(OC2HF1)2. Z n (OC2H+) z, B(OCH3) 3 *AQ(i-0CaH7) a, G a (OC2H5)31Ya(OC4H9)3.S i (OC2H5) 4 +G e4(OC2H3). P b4(OC4H9).P(OCHa)3*S b8(OC2H11).VO(OC2H5) 8 *Ta(OC3H7)5.W(OC2H3) e, N d (OC2H5) 3 [A Q +T i4(iso-OC3H7).Z r41(OC2H5)L a (is.) [A Q4 (iso-OC3H7)] KI M g - OCaH74]2+ [A M g [A Q (iso -OC4H1+) Four-piece 2 *N i (1(iso-OC3H7)4-piece s) (CsH70) zZ r [A Q (OC3H7) a] 2+ B a If [Z r 2 (OC2H3) nine-piece 2 * and the position which irradiates with light energy are moved, it will become possible to form the composition object of not only a thin film but predetermined shape. Various functions can be given to a formation thing if the wavelength of the light with which it irradiates is changed with the device by which monochrome meter was installed in that case. For example, the organic matter which remains to the formation inside of the body can be decreased by irradiating with the light energy of a wavelength required after the formation process of the composition object of predetermined shape, or formation, in order to generate ozone other than the light energy of the wavelength for promoting a reaction. Even if not only the position of a light source but the formation thing may be moved and it moves both, it can be considered as the formation thing which has two-dimensional or three-dimensional specified shape. In the present invention, although promotion of a reaction or increase of a function is aimed at by light irradiation, since it can complete at low temperature, the complex or lamination structure of the organicity which was not able to be attained by the conventional method which needed heat-treatment, and inorganic matter can be formed. Solution which makes a subject a plurality of metal Alkoxide other than the solution which made the subject metal Alkoxide mentioned above as solution for making predetermined shape form. There are solution which makes organic polymers a subject, solution which makes the mixture of metal Alkoxide and organic polymers a subject, solution which makes a subject organic metallic compounds other than metal Alkoxide, etc. The formation thing of 3 specified shape with [ by independent, combining and using ] various kinds of functions for these solution can be obtained. When various fillers are included in solution, it can use effectively as the present invention similarly. Since metal Alkoxide is distributing uniformly to the molecule order in organic polymers when the art of the present invention is applied to the solution which makes the mixture of metal Alkoxide and organic polymers a subject, the characteristic of the composition object acquired becomes a thing of the high-reliability superior to the thing of conventional technology. The metal oxide which is a derivative from metal Alkoxide currently distributed is uniformly distributed at 0.05 micrometer at the maximum, without condensing like, although obtained by addition of the powder of the conventional method, etc. Thus, the composition object which the metal oxide distributed uniformly in organic polymers by application of the 1 present invention has a dielectric constant higher than an organic polymers simple substance, and can expect the use of a highly efficient film capacitor etc., for example. [Example] Hereinafter, although an example explains the present invention still more concretely, the present invention is not limited to an example. 41 Example 1 Drawing 1 is a lineblock diagram showing an example of a film deposition system which carries out the present invention. Immersion apparatus 4 for buck 7. board 9 which fixes the monochrome meter 3 * monochrome meter which can take out alternatively the light of light irradiation device 2. specific wavelengths, such as an ultraviolet-rays lamp, in box j in which atmosphere substitution, such as pure air, is possible to be immersed in the reaction solution within the Py power 6 is installed. Sorting of a wavelength is made in monochrome meter 3, it is reflected by mirror 8, and the reaction solution which is contained in beam 6 is irradiated with the light which occurred from light irradiation device 2. Reaction solution is installed on stirrer 5. It is agitated by churning child 1o rotation. After advancing a sol gel reaction enough by the light irradiation of a definite period of time, mirror 8 can be pulled up in the upper part of monochrome meter 3. Subsequently, substrate 9 is immersed by immersion apparatus 4 into reaction solution, and is formed. It is stopped by substrate 9 in the position where it is most often irradiated with the light after mono-macroscopic meter passage, and light irradiation is made for a definite period of time. At this time, ozone occurs in the air and ozone oxidization of the formed thin film is made. The flow shown in Drawing 2 was accompanied using this device, and TazO6 thin film was formed. Tantalum Ethoxide Ta (OR) 0.5 mol / alpha ethanol (Cz H50H) solution of 5 were produced. It is 0.5 moQ/Q ethanol solution 8mfl and chloride 0.1 moff/fl of water (H2O) to this solution 2mQ. The solution which added ethanol 2mA to the mixed solution of ethanol solution 2.5m12 was dropped the speed for 3mQ/, and the transparent uniform mixed solution was obtained. This mixed solution was irradiated with the 254-nm light of the mercury lamp corresponding to the absorption position of a tantalum ethoxy basis for 30 minutes for 1 hour using the film deposition system shown in Drawing 1. The polymerization of Ta oxide takes place by the following reactions, and to form high-polymer pre polymer into solution is considered by this light irradiation. Ta (OR) 5+Hzo->(RO) iTaOH+Ta(OR) a->(RO) tT'a-O-T a It will be as follows if the structure of (OR)4+ROH pre polymer is shown. [ (RO) 4 TaOH+ROH] Then, the reaction solution which has this high-polymer pre polymer was formed on Sj and 02 boards using the immersion apparatus attached to a film deposition system, and in order to generate ozone in the air, it irradiated with light (ultraviolet rays) with a wavelength of 184 nm for about 10 minutes. The temperature of the film in light irradiation is set to about 50~60 degreeC. Thus, amorphous polymer of the tantalum pentoxide film of the following molecular structure is formed on a substrate. Drawing 3 is an absorption-spectrum diagram of the reaction solution at the time of irradiating a tantalum Ethoxide ethanol solution with the light of a mercury lamp with a wavelength of 254 nm. As shown in a figure, it compares before the light irradiation of a solid line, and is 7 of - dotted line. - 0.5 A spectral line can move to the short wavelength side by the 1-hour light irradiation of a dotted line from time, and it can monitor the polymerization of the tantalum pentoxide polymers pre polymer formed into reaction solution by monitoring this absorption spectrum. Drawing 4 is a diagram showing a relation with the wavelength in the peak value of the absorbing capacity to the light irradiation time and each light irradiation time of Drawing 3 to reaction solution. Those of the peak value of each wavelength without light irradiation are 250 nm. 30-minute irradiation is 224 nm, 60-minute irradiation is 208 nm, and it seems that a pre polymerization completes the peak value mostly in about 100 minutes. About 50% arises in 30 minutes, and the pre polymerization has arisen about 80% in 60 minutes. Therefore, although the light irradiation to reaction liquid is so preferred that it is high as a pre degree of polymerization, it is 50% or more especially as a pre degree of polymerization, making it to 80% or more more preferably -- good -- better -- it measured as compared with one film which formed the amount of remains organic matters in the Ta20a thin film infrared absorption spectrum produced using the A0 above-mentioned process, and its film, and the chemicals stoichiometry composition ratio by other methods using ESCA. Drawing 5 is an infrared-absorption-spectrum diagram of the obtained film. Among a figure, after that to which (a) does not carry out light irradiation of any after reaction solution and membrane formation, the thing which (b) made light irradiation of the present invention, and (c) form membranes, without carrying out light irradiation to the above-mentioned reaction solution, they are heat-treated among the atmosphere by 400 degreeC. As shown in a figure, the intensity of the absorption-spectrum line of the thing of (a) and (b) is low near wave number 3300an' and near 1600an-" as compared with the thing of (c), and this is because water exists. At (a), they are Based <CH Torsional vibration is required to an organic matter. The polymer membrane of others and Ta oxide is the same absorption spectrum. Specific inductive capacity (epsilon) of Ta oxide film which obtained 6th [ The ] figure~figure 9 by various kinds of processes respectively, electric strength (MV/cm). It is a figure showing C content in TaOx composition and a film. After heat treatment sol gel membrane forms membranes with the above-mentioned reaction solution which does not carry out light irradiation, what was heat-treated by 400 degreeC, and optical assistant sol gel membrane are films obtained according to the process of Drawing 2 of the present invention, What carried out light irradiation of 02 after membrane formation in oxygen, the thing of reaction time 6 hours which does not carry out light irradiation of the sol gel membrane, and an optical CVD film form membranes by 200-300"C, and membrane formation and heat CVD form membranes by 350 degreeC. Any sol gel membrane has about 2000 persons' thickness repeatedly 4 times. As shown in Drawing 6, the film of the present invention shows the high specific inductive capacity of 525 or more [ equivalent to a heat treatment film ], but a CVD film and sol gel membrane are specific inductive capacity lower than it. As shown in Drawing 7, as for the film of the present invention, the electric strength 2.7 MV / more than ■ is obtained. As shown in Drawing 8, especially the amount of C in the film in the present invention is as low as four atom % by the light ASCIT film in 02, and the film of the amount equivalent to a heat treatment film of low C is obtained. As shown in Drawing 9, it turns out that TaOx composition of the light ASCIT film in oxygen of the present invention has 88% of oxygen to 2.2 and the amount 2.5 of theoretical oxygen, and the film of the chemicals stoichiometry of 2.0 higher than 80% of a heat treatment film is obtained. The resistivity of the light ASCIT film in oxygen of the present invention has a 1011-ohm country and a high value. It has CH combination, it converts into the amount of C as organic matter residual volume, and the film of the present invention which carried out light irradiation so that clearly from the above result is 4.0. They were atom % and T a Ox composition ratio (O/Ta) 2.2. Irradiation intensity 40 mW/cJ, 3 hours C content was 0.01atm% as a result of analyzing the film which irradiated with ultraviolet rays. On the other hand, it had CH combination, it converted into the amount of C as organic matter residual volume by the film which does not carry out light irradiation, and they were 11.0atom% and TaOx composition ratio (0/Ta) 1.6. The film which carried out light irradiation showed one 1.4 times the value of this by 1/2.8 and a TaOx composition ratio (0/Ta) with organic matter residual volume as compared with the film which does not carry out light irradiation, and the film near chemicals stoichiometry with little organic matter residual volume was obtained. In order to have obtained the film which carried out light irradiation, and the thin film of the same organic matter residual volume and a TaOx composition ratio, it needed to be heat-treated to the film which does not carry out light irradiation more than 400 degreeC. The same technique is used and heat-resistant temperature is a polyester film below 300 degreeC, and a mylar sheet. The thin film was formed also in up to metal substrates, such as organic matter boards, such as an acrylic resin, or stainless steel (it is 1' to thermal expansion coefficient 17.3X" and O-8) which has one or more [ 1 ] differences of a thermal expansion 51-coefficient in 5x10-6, and aluminum (thermal expansion coefficient 23.6 X 10-8K-'). The organic matter residual volume of these films and a TaOx composition ratio (O/ T a) showed the same value as the film formed on the 5i02 board. Example 2 Photograph etching was given to the vapor deposition transparent conductive film of the glass substrate with a transparent conductive film (34rm X 34+o), and it was considered as the glass board with a transparent conductive film of 2■ width. The electroluminescence device (EL element) shown in Drawing 10 (a) and (b) was produced using this glass substrate. The tantalum pentoxide film was similarly produced using what carried out light irradiation to reaction solution for 60 minutes among the methods of Example 1 on glass substrate 13 with transparent conductive film 14 mentioned above. The process of the method shown in Example 1 was repeated 4 times, and amorphous polymers Ta20I which becomes the first insulating layer 15 of EL element on a transparent conductive film, and 2000 films were formed. next -- as luminous layer 16 -- Mn52-0.5wt% -- after carrying out 5000-person electron beam vapor deposition of the included ZnS, vacuum heat treatment was performed by 2.6X10-'Pa and 300 degreeC for 1 hour. Furthermore, B a T a woe was formed by the 2000-person sputtering method as the second insulation film 17. After carrying out 2000-person resistance heating vapor deposition of the aluminum as top electrode 18, the electrode terminal was attached and it was considered as the element for EL. In the top view of EL element of Drawing 10 (b), the crossing portion of transparent conductive film 14 and top electrode 18 is equivalent to a pixel, and emits light. In the conventional EL element, since the Y 20g film of dielectric constant 12. electric strength 3~5MV/ (2) grade was used for the 1st insulating layer and the 2nd insulating layer, as for the drive voltage of EL element, abbreviation 200v and the high voltage were needed. In this element, the characteristic of the Ta20B film used for the first insulating layer is 2.8MV/piece in dielectric constant 28. electric strength, and the low-voltage drive of it by 170V was attained. Even if the characteristic of T a xO5 film of the first insulating layer passed through heat treatment of 300 degreeC after luminous layer vapor deposition, dielectric constant 14, electric strength 2.3 MV/cm, and since it was low, the drive voltage of 210V was required for EL element which, on the other hand, used for the first insulating layer the TazOg film which does not carry out light irradiation. As a luminous layer, they are Sm8+ (red) and Tb3+ (green) to ZnS besides entering EU CaS (red), entering Ce caS (green), and 5rS containing Ce (blue-green). Tm'+ (blue) etc. can be used. As an insulating layer, the polymer membrane of SiO2 and YzO3 can be used and the amorphous film of 85% or more of high oxygen content can be obtained [ like the above-mentioned ] to chemicals stoichiometry composition as these composition by a sol gel process. They are (OC2Ha) tin Alkoxide Sn i and indium Alkoxide I n (OCR11) as the above-mentioned transparent conductive film 14! One solution is used, This solution is irradiated with light with a wavelength of 230~240 nm for 60 minutes, and the pre polymer fluid of a tin oxide and an indium oxidation thing is made, Glass substrate 13 was immersed in this solution, membranes were formed, and transparent conductive film 14 which repeats the process of subsequently irradiating with ultraviolet rays with a wavelength of 184 nm like the above-mentioned, and has a predetermined film was formed. Then, it formed like the 1st insulating layer as mentioned above. A subsequent luminous layer, the 2nd insulating layer, and top electrode are formed similarly. Many pixels are formed on a substrate and EL element is driven by a high frequency power supply. Although the protective film of SiO2 is further formed in EL element all over the, it consists of a polymers amorphous film formed by the method of the present invention like the above-mentioned. Like the above, since EL element manufactured by this example can be formed except for a luminous layer and a top electrode with the polymers amorphous film by the sol gel process for which heat treatment does not need a transparent conductive film and a #@ marginal film, it is effective in the ability to manufacture the thermal influence by a thermal expansion difference few. Example 3 As shown in Drawing 11, it is S i as substrate 19. TazO5 film was produced using the method shown in Example 1 using [(P mold face index (100) and specific resistance 1.2~1.8ohmand■)] on this substrate. The process was repeated 4 times using what carried out light irradiation to reaction solution for 60 minutes among the methods shown in Example 1, and T a 206 film 20 was formed to up to a 2000-person Si substrate. After carrying out 1000 thickness vacuum deposition of the 55-AQ electrode 21 to up to an insulating film, AQ electrode 21 was similarly vapor-deposited to the back side of the substrate, and the thin film capacitor was produced. The dielectric constant of an insulating layer has a big value greatly compared with TazO5 of 2, 8 M V/am, and the former compared with 5iOz about 5 times by 28. [ electric strength ] The thin film capacitor with large electric capacity per unit area and the good electric strength characteristic was able to be obtained using the insulating film by the present invention. The same thin film capacitor can also be directly formed on a printed circuit board or in a substrate. If it is a printed circuit board in this case, it is effective in the measure against a noise of a high frequency circuit. Example 4 Beaker 22 (inside diameter 50+nm.) made from SUS304 stainless steel The process was similarly repeated to the 60-m-deep inside 4 times by the method shown in Example 3, and it was coated with about 2000 persons' TaxeI5 film 23. 3-N chloride 20mQ was put in in this stainless steel beaker, the entrance was stopped by parafilm, and month-long neglect was carried out in -. Although chloride was thrown away after the 56- and the beaker inside was observed, the corrosion on the surface of stainless steel was not observed. Corrosion-resistant improvement was made by coating of Ta205 film by this method. In what does not carry out light irradiation, the endurance of the film to a stainless steel top was bad, when the same experiment was conducted, Raw materials arose after progress for seven days, and corrosion had also arisen. Raw materials considered to originate in the difference of the thermal expansion coefficient of stainless steel and a thin film when it heat-treats by the method of being higher and 200 degreeC produced membranous adhesion nature. It is effective as a protection coat [ as opposed to the same acid-proof-izing and corrosion resistance to metal or alloys, such as protection to the air oxidization and corrosion to carbon steel besides 5US304 stainless steel, other AQ(s), and Cu, ]. In this example, although the example of the Taxes film was shown, other oxidization coats can choose the film material of the above-mentioned kind according to the kind of material. Example 5 The 0.5 mon/Q Ethanol solution of silicon tetra-Ethoxide was produced. The mixed solution of ethanol solution 10mQ of 0.5 moQ/rho ethanol solution 80mM of water and chloride 0.1 mon/Q was dropped at this solution 20mtheta the speed for 3-m12/, and transparent uniform solution was obtained. It irradiated with the 210-nm light equivalent to the absorption position of the silicon ethoxy basis using the film deposition system shown in this mixed solution in Drawing 1 for 60 minutes. Subsequently, the semiconductor device in which the thin film integrated circuit was formed on silicon substrate 24 shown in Drawing 12 was immersed into solution using the immersion apparatus attached to a film deposition system, and it irradiated with a 184-nm light required for ozone evolution for 10 minutes into [ after forming thin film 27 on an integrated circuit ] the air. In Drawing 12, it is a polymer membrane of SiO2 film which produce 24 by a Si substrate, and 25 was produced with an A degreeC electrode 5iOz+26, and was produced by the method of the present invention 27. 27 is SiO2 polymer membrane and is a protective film (Passivation) which protects a thin film integrated circuit from a disturbance element. Since this film has the very pure composition near chemicals stoichiometry and it is polymers-ized more, what has high protection nature is obtained. In order not to carry out membrane formation stress relief heat treatment like the conventional method, there is also no impurity diffusion in a heat treatment process, such as stress generating and Na+, and it does not have a bad influence on a semiconductor device. For this reason, reduction-ization of the soft error of the element of 75 or less fits is attained. SjO2 film 25 is formed of thermal oxidation, and AQ electrode 26 is formed of vapor deposition, sputtering, etc. High dielectric constant films, such as Tl]206 *PZT, may be provided instead of SiO2 as 27. Example 6 1 moQ/Il of tripropoxy antimony! Isopropyl alcohol solution was produced. The mixed solution of 1 mon/Q isopropyl alcohol solution 15mQ of water and chloride 0.1 moQ/II isopropyl alcohol 5 m Q was dropped at this solution 30mQ the speed for 3mQ/, and transparent uniform solution was obtained. This mixed solution was irradiated with the 250-nm light equivalent to the absorption wavelength of an antimony isopropoxy group for 30 minutes using the film deposition system shown in Drawing 1. Subsequently, polymethylmethacrylate resin (PMMA) board 28 (diameter 130G) shown in Drawing 13 On thickness 1.nn, using the immersion apparatus attached to a membrane formation 59-device, it was immersed into solution and irradiated with a 184-nm light required for ozone evolution for 10 minutes into [ after forming thin film 29 in PMMA board" 2 ] the air. Thus, the thickness 1ooo person's recording-medium layer was formed on the PMMA board. The thin film was further formed on one more PMMA board in a similar manner. These two substrates were pasted up via spacer 30, and the optical disc of the composition of Drawing 12 was produced. Since it does not pass through a heat treatment process but the antimony oxide thin film of chemicals stoichiometry composition with the sufficient adhesion nature to a substrate top is formed, this optical disc is reliable over a long period of time. Metal Alkoxide is used as memory material by the same method, and it is mainly concerned with Te oxide, and Ga. germanium, ~ [ one or more sorts of ] 10 % of the weight and In of As, Sn. One or more sort 10~20% of the weight of the oxide of sb can be obtained. It may have a protective film and can make the polymer membrane of SiO2 form by the same method as this example as this protective film on a recording medium. 0 SiO2 film can be obtained like Example 5. A protective film can be made to form in an entire disk by this method. As a substrate, poly car Bonneu 1- and an epoxy resin can be used for others. Example 7 0.5 mofl/Q ethanol solution 20mfl of titanium Ethoxide was mixed to 20m1 l. of 0.5 moQ/Q ethanol solutions of silicon Ethoxide. They are 0.5 moQ/Q of water to this solution. They are 0.11 IlOQ/Q of chloride to ethanol solution 20mQ. The mixed solution which added ethanol solution 1mQ was slowly added with the speed for Q and 2-m1li/. Thus, the polyethylene board (50X 20 X2(thickness)ton) was installed under the surface into the produced homogeneous-mixing solution in a 5-mm position. Subsequently, after irradiating with the 210-nm light corresponding to the absorption wavelength of silicon Ethoxide for 10 minutes from the upper part of a surface, it pulled up out of liquid and irradiated with a 184-nm light required for ozone oxidization for 10 minutes on the substrate. This substrate was again installed in a 5-m position under the surface, and it irradiated with the 260-nm light corresponding to the absorption wavelength of titanium Ethoxide for 10 minutes this time. Subsequently, the substrate was pulled up and it irradiated with a 184-nm light required for ozone oxidization. Such 210 nm, 184 nm, 260 nm. The process of irradiating with 184-nm light was repeated 5 times by turns. The structure of the multilayer film which was carried out in this way in Drawing 14, and was produced is shown. The inside of a figure, and polyethylene board 31 They are layer (it has TiO2) 32 which contains *SiO2 so much, and layer (it has SiO2) 33 which contains Ti O2 so much. Thus, the multilayer film produced on the polyethylene board showed the good performance as a light weight and a high intensity antireflection film. As a result of fixing the chemical species of SnO2 and TiO2 by ESCA, 5nlV and TiN were observed. Example 8 0.5moQ7m ethanol solution 20mrho of 0.5 moQ/n ethanol solution 20mQ Ching (tin) Ethoxide of indium Ethoxide was mixed. They are 0.5 mofl/fl of water to this solution. The mixed solution which added ethanol solution 2mM of ethanol solution 30mQ and 0.1 moQ/Q of chloride was slowly added with the speed for 0.2mQ/. Thus, the polyethylene board (50X50X2 mu (thickness)) was installed into the produced homogeneous-mixing solution in the position of bottom of surface 5nwn. Subsequently, after irradiating with the 270-nm light corresponding to the absorption wavelength of indium Ethoxide for 10 minutes from the upper part of a surface, it pulled up out of liquid and irradiated with a 184-nm light required for ozone oxidization for 10 minutes on the substrate. This substrate was again installed in the bottom 5-m position of a surface, and it irradiated with the 230-nm light corresponding to the absorption wavelength of the Ching (tin) Ethoxide for 10 minutes this time. Subsequently, the substrate was pulled up and it irradiated with a 184-nm light required for ozone oxidization for 10 minutes. The process of such light irradiation in solution and the light irradiation in the air was repeated 5 times. The structure of the multilayer film which was carried out in this way in Drawing 15, and was produced is shown. Polyethylene board 34 in a figure They are layer (SnO2 is contained) 35 which contains *In2O so much, and layer (Into is contained) 36 which contains Snow so much. The multilayer film produced on this polyethylene board shows performance good as 3-light weight and a high intensity infrared reflection film. Example 9 Drawing 16 is a lineblock diagram showing an example of a device which carries out the present invention. In order to form a predetermined formed body, light source 61 provided with the system for controlling an irradiation position, a scan speed, a diameter wavelength of a beam, etc. and substrate 62. board 62 which forms a formed body are held, Immersion and raising are enabled in sample Fog liquid 64 and 65, and formation of a specified shape object is enabled in conjunction with light source 61. Stirring bar 66 for keeping homogeneous the substrate buck 63. sample solution which established the vertically moving mechanism, and starter 67 are installed in box 68. The box is provided with atmosphere controller 69 which makes it possible to maintain at an inactive state etc. The light which occurred from light source 61 is immersed into each sample solution, and substrate 62 currently coated with it is irradiated. The irradiation position is a system which moves automatically under the set-up conditions. - Open - Example 10 0.5 moQ/fl of indium Ethoxide 0.5 moQ/Q ethanol solution 20mQ of the Ching (tin) Ethoxide was mixed to ethanol solution 20 rr+fl. They are 0.5 moQ/Q of water to this solution. Ethanol solution 30mM and 0.1.moQ/fl of chloride The solution which added x Tanol solution 2 rr+fl was slowly added with the speed for 0.2mQ/. Thus, homogeneous-mixing solution A was adjusted. Next, epoxy acrylate resin (the specific gravity 1.14. viscosity of 200 c.p.s. (20'C) and B were prepared.) Above A and B was used as sample solution, and the thing with a built-in transparent electric conduction layer was formed using the specified shape object forming device shown in Drawing 16. The above-mentioned A was put into 64 of Drawing 16, and B was put into 65. The acrylic resin was used as substrate 62. First, it irradiated with 1 THE (30 mW of outputs) which is pulled up and is spread in helium -Cd in scan speed 100mn/a second after immersing substrate 62 in 64. Following on it, 184-nm light was scanned at 10 mm/second in speed. This operation was repeated 5 times and the indium tin oxide (ITO) layer was formed on the acrylic resin board. The ITO layer formed on the acrylic resin board is 0.5 micrometer in thickness. @ -- it has a pattern out of which it comes and which is shown in Drawing 17 (A) 30 micrometers. Thus, after forming ITO[, the substrate was immersed in 55, it irradiated with the helium -Cd laser beam all over the substrate, this was repeated twice, and the epoxy acrylate resin coating layer of thickness 0.1mn was formed. The formation thing formed in this example is Drawing 17 (A). It is a thing of the shape shown in (B), and has attained cloudy prevention of the substrate by energizing from ITO both ends. Example 11 The ethanol solution of tantalum Ethoxide [T a s (OC2Hs) is added to the solution which dissolved polyvinyl butyral with 1% of hydrated ethanol, and it fully agitates, and considers it as a mixed solution. After adjusting and making it about 5000 Cps(es) while operating vacuum defoaming of the viscosity which is this solution, it formed in poly esthetic Lucy 1~" 2 at the sheet shaped with the doctor blade method which is the well-known technique. At this time, the Kr-F laser beam was reflected in the surface of a sheet-shaped formation object with the scan speed of 100 n+m / second at the exit from a braid, and, subsequently it irradiated with 184-nm light with the scan speed of 10 mm/second with the ultraviolet-rays lamp. Thus, after advancing a chemical reaction, it was made to dry and the sheet of about 30-micrometer length in thickness 1000mn and @10 Field was obtained. The dielectric constant of this sheet is 6.1 and was large compared with 3.6 of a polyvinyl butyral simple substance. After piling up and winding two sheets which vapor-deposited aluminum and were created similarly around one side of the formed sheet, heating to about 80 degreeC, pressurizing by the pressure of 20 kg/c+# and improving adhesion nature between the rolled sheets, The aluminum exterior electrode was formed in both ends by metallized contact, the lead was soldered, respectively, and it was considered as the capacitor. Thus, since the dielectric constant of To 7-Be dielectric itself was high at the capacitor which uses the film of only the usual organic matter since the inorganic substance is uniformly compounded with the organic matter, the formed capacitor has attained high capacity-ization of the capacitor. Example 12 Mixed-solution A and resin B which were prepared in Example 10 were used as a material, and the touch panel was produced by the method shown below. First, mixed-solution A was coated on the polyester sheet with the doctor blade method. At this time, the coating layer on a sheet was irradiated with the Kr-F laser beam with the scan speed of 100on / second with the output from a braid, and, subsequently it irradiated with 184-nm light with the scan speed of 10++++r / second with the ultraviolet-rays lamp. This operation was repeated 4 times and the 0.5-micrometer-thick transparent conductive film (ITO) was formed on the polyester sheet. Then, resin B was coated on the ITO film and the structure with section shape which shows helium -Cd laser with a diameter of irradiation light of 0.3 m for the coating side top in irradiation and Drawing 18 by 5 Peng interval was formed. 75 formed by resin B becomes a spacer of a touch panel. The member which formed the ITO film in poly esthetic Lucy 1- for the above-mentioned method similarly was further manufactured, and it was considered as the touch panel after forming an electrode combining both. The touch panel formed by this method satisfies a use in respect of a response, transparency, and the other characteristics. Example 13 Ethanol solution 20mQ of 0.5 moQ/R of water, 0.1 mofl/Q of chloride, and ethanol solution 1mrho were added to ethanol solution 20mfl of 0.5 moQ/Q of silicon Ethoxide, and it mixed to it. Thus, after an aluminum conductor electric wire was immersed into the prepared homogeneous-mixing solution, when pulling up an electric wire from solution, the electric wire was irradiated with Ar-F laser by the interface of solution. Raising speed of the electric wire was made into a second in 60 mm /. Then, it irradiated with 184-nm purple outdoor daylight, this operation was repeated 5 times, and the insulating film of SiO2 was formed on the surface of the electric wire. Thus, the formed insulating film does not have generating of insulation being securable even if it uses it under the environment of 600 degreeC, and hydrocarbon or carbon dioxide, either. It was admitted that use in a vacuum was also possible. By the method of this example, moreover, the coating layer could be continuously formed in the wire rod at low temperature, and it was admitted that the present invention was industrially useful. Example 14 The ethanol solution of 0.5 mofl/omega of water and the 0.1 moQ/alpha ethanol solution of chloride were added to the ethanol solution of 0.5 moQ/Q of silicon Ethoxide, and solution (1) was prepared. The ethanol solution of 0.5mo Q /Q of water and the 0.1 moQ/Q ethanol solution of chloride were added to the 0.5 moQ/Q ethanol solution of titanium Ethoxide, and solution (TI) was prepared. The polyester board was first installed in a 5-mm position under the surface of solution (I), after irradiating with the 210-nm light corresponding to the absorption wavelength of silicon Ethoxide for 10 minutes from the upper part of a surface, the substrate was moved out of liquid, and it irradiated with a 184-nm light required for ozone oxidization for 10 minutes. Then, the substrate was installed in the position of bottom of surface 5 Field of solution (II), and it irradiated with the 260-nm light corresponding to the absorption wavelength of titanium Ethoxide for 10 minutes. Subsequently, the substrate was moved out of liquid and it irradiated with a 184-nm light required for ozone oxidization for 10 minutes. Such solution (1) middle 210nm light irradiation [ light irradiation -> board move ->184nm ] -> the process of 260-nm light irradiation [ light irradiation -> board move ->184nm ] was repeated 5 times by turns among solution (II). The SiO two-layer / TiO two-layer multilayer film was able to be formed on the polyester board by this. This multilayer film showed the characteristic as a good antireflection film. Example 15 The environment-resistant protective film was produced to up to the plastic optical fiber. Drawing 19 is a sectional view of the plastic optical fiber with a protective film produced this time. As for a protective film and 82, a blood part and 84 are core parts an organic resin part and 83 81. It describes about the manufacturing method of a protective film below. The 0.5 mofl/Q ethanol solution of silicon Ethoxide was produced. It is 0.5mofl/of water to this solution 20mR! l ethanol solution 80mfl and chloride 0.171 - Ethanol solution [ of moQ/Included ]] and the mixed solution of Om Q were dropped the speed for 3mfl/, and transparent uniform solution was obtained. This mixed solution was irradiated with 210-nm light for 60 minutes using the film deposition system shown in Drawing 1. Plastic optical fiber (thickness: 211 Wl+phi) k immersion of was done into this solution, and 5102 protective films 81 were formed on the fiber surface. Subsequently, it irradiated with a 184-nm light required for ozone evolution for 10 minutes into the air for this fiber. Thus, the environment-resistant examination of the obtained plastic optical fiber was done by 100 degreeC among engine oil. Drawing 20 is the result. A light volume maintenance rate is shown on a vertical axis(%), and lapsed time (h r) is shown on a horizontal axis. Diffusion of the oil to the inside of a fiber showed that the oil resistance which showed 80% or more of the light volume maintenance rate, and was extremely excellent also after 1000-hour progress was shown with the fiber with a protective film produced this time what has a nothing protective film, although the light volume maintenance rate fell to about 40% 1000 hours afterward. For this reason, it is suitable as a plastic fiber for automobile engine control, for example. Since this forming-membranes method is excellent as a low-temperature process, it becomes producible [ the inorganic film to a plastic fiber top without heat resistance ]. Example 16 As shown in Drawing 21 according to the making process of a semiconductor device usual plastic mold type, wirebonding of the Au line was carried out through with chip and Belem 1- from the leadframe. The under coat of the inorganic film was carried out by the method shown below on this element. 0.5moQ/of silicon tetra-Ethoxide (i ethanol solution was produced.) 0.5 moQ/fl ethanol solution 80mQ of the glacial acetic acid which is organic acid was slowly added to 20 mA of this solution. This mixed solution was irradiated with the 210-nm light equivalent to the absorption position of a silicon ethoxy basis for 30 minutes. The above-mentioned element was immersed into this solution, and inorganic protective film 95 was produced. Subsequently, this element was irradiated with 184-nm light for 10 minutes in the air. This element was again immersed into solution, and after forming membranes, it irradiated with 184-nm light for 10 minutes in the air. This process was repeated 10 times and the under coat was performed. Thus, the plastic molding of the produced element was carried out using the epoxy resin, and the semiconductor device was completed. The structure is shown in Drawing 21. in this figure -- 91 -- an Au-3j alloy and 94 show a chip, 95 shows an inorganic protective film, and, as for Au wire and 93, a leadframe and 92 show an epoxy resin 96. Since the element produced by this method does not include the process of heat treatment and moisture is not included in the solution for production of an inorganic protective film, a very powerful semiconductor device is obtained. That is, there is also no stress generating in a heat treatment process, and since [ of Au line and an inorganic protective film ] it gets wet and a sex is also good, the high protective film of adhesion power is producible. Moisture is not contained in this protective film. For this reason, reduction-ization of the soft error of an element is attained. Example 17 The T a 205 thin-film capacitor for high frequency was produced using the technique of the present invention. The production techniques are as follows. The 0.5 moQ/Il ethanol solution of tantalum Ethoxide was produced. Glacial-acetic-acid 0.5 mall/Q ethanol solution 80mQ was added to this solution 20mQ. This mixed solution was irradiated with the light of 254 films m for 60 minutes. The F e-4 or 2%Ns board which carried out the mask of the back into this solution as shown in Drawing 22 (10X], OXO, and 5tHO1 were immersed, and membranes were formed.) The field which formed membranes was irradiated with the light of 184. n m for 10 minutes in the air. Subsequently, again, after this board was immersed into solution, it irradiated with the light of 184 films m for 10 minutes in the air. The degree was repeated 20 times to this 2, and Ta205 1-micrometer film 102 was produced. Vacuum deposition of Afl103 was carried out to Nj board" 2 F e-4 or 2% with Ta205 film, and the thin film capacitor was produced. As for this thin film capacitor, electric capacity change is hardly seen also by]-G Hz. For this reason, when a high-speed device and a circuit were mounted with high density and operated using this thin film capacitor, the measure against noise which is the cause of the maximum of malfunction was made. Example 18 The protective film of plastic lens" 2 was produced. Drawing 23 is a sectional view of the plastic 5with protective film-lens produced this time. 111 is a plastic lens and 112 is a protective film. Hereinafter, it describes about the manufacturing method of the protective film to a lens top. The 0.5 moQ/Q ethanol solution of silicon Ethoxide was produced. The mixed solution of 0.5 moQ/Q ethanol solution 80mQ of water and chloride 0.1 mofl/Q ethanol solution 10mQ was dropped at 20 mA of this solution the speed for 3mQ/, and transparent uniform solution was obtained. This mixed solution was irradiated with the light of 210 film m for 60 minutes using the film deposition system shown in Drawing 1. The crevice was protected on the tape in this solution, the plastic lens (100mmphi, maximum convex part 5nwn) kept solution from attaching was immersed, and 5iOz protective film 112 was formed on the convex part surface of plastic lens 111. Subsequently, it irradiated with the light of 184 films m required for ozone evolution for 10 minutes into the air for this lens. Thus, it was possible to have prolonged a use life sharply, without a crack arising on a lens in the usual use, since the precise and hard protective film sticks on the obtained plastic lens. 6 This method can produce a uniform film in a convex part etc. Example 19 The Ta2es thin film capacitor was produced on the printed-circuit board using the technique of the present invention. The production techniques are as follows. The 0.5 moQ/Q ethanol solution of tantalum Ethoxide was produced. They are glacial-acetic-acid 0.5moQ and /Il to this solution 20mQ! Ethanol solution 8 solution 80 Deluxe fl It was. This mixed solution was irradiated with the light of 254 films m for 60 minutes. The printed-circuit board which carried out the mask of the position which the grand electrode of a silicon chip grounds in the whole back surface and the surface in this solution was immersed, and T a 205 film was formed on the surface of the printed-circuit board. The field which formed membranes was irradiated with the light of 184 films m for 10 minutes in the air. Subsequently, again, this substrate was immersed into solution, and after forming membranes, it irradiated with the light of 184 films m for 10 minutes in the air. This process was repeated 10 times and T a 205 0.5-micrometer film was produced. Subsequently, after removing mask material, vacuum deposition of the AQ was carried out to the upper part and the mask removing part of T a 205, and the electrode was produced. Besides, the part was equipped with the silicon chip. Drawing 24 is a sectional view of the silicon chip on the printed-circuit board which was carried out in this way and produced. Ta205 film a printed circuit board and whose 122 are dielectric layers an electrode and 123 121 in a figure, and 124 are silicon chips. A Ta20g film acts as a thin film capacitor, and electric capacity change is hardly seen also by 1.0 Hz. For this reason, the semiconductor device produced with the described method was able to do the measure against noise which is the cause of the maximum of malfunction, when a high-speed device and a circuit were mounted with high density and operated. Example 2 * The substrate for semiconductor loading which provided the insulating layer of the metal oxide film on the copper plate was produced using the technique of the present invention. 0.5mo of silicon Ethoxide (1 / Q ethanol solution was produced.) 0.5mofl/12 of the glacial acetic acid which is organic acid at this solution 20+nfl Ethanol solution 80mR was added slowly. This mixed solution was irradiated with 210-nm light for 30 minutes. The copper plate of the predetermined size was immersed in this solution, and 5iOz film was formed. Subsequently, this substrate was irradiated with 184-nm light for 10 minutes in the air. The process of the light irradiation in this immersion membrane formation and the air was repeated 20 times, and S i 02 about 10-micrometer film was produced on the copper plate. Since the insulating layer is formed on good steel of heat conduction, this substrate is preferred as a substrate for semiconductor loading. Drawing 25 is the semiconductor device produced using this substrate. in this figure -- 131 -- a silicon chip and 132 -- a bonding wire and 133 -- a lead and 134 -- as for a metal layer and 138, a copper board and 136 are [ a cooling fin and 140 ] adhesion layers a cap and 139 the glass for seals, and 137 5i02 film and 135. According to the present invention, what provided insulating layer S i O2 film 136 on thermally conductive good copper 135 can be used as a substrate for semiconductor loading. For this reason, the heat which occurs at the time of a semiconductor device operation is efficiently removable. When the intensity and time of light irradiation of an example are summarized, it is as in the following table. The wavelength of the light which a expresses the intensity of the wavelength of the light used for pre polymer of metal Alkoxide, irradiation time, and light in a table, and b oxidizes pre polymer, and is decarbonized. The intensity of irradiation time and light is expressed. [Effect of the Invention] According to the present invention, it is obtained by the method which the polymers metal polymer thin film to which chemicals stoichiometry with few amounts of remains organic matters was equal does not heat-treat at low temperature. Since the polymers metal oxide thin film obtained by this method shows character good as a dielectric film and an insulating film, it is used for the recording medium of EL element, a thin film capacitor, and the protective film optical disc of a semiconductor device, etc., and highly efficient-ization of various electronic devices is attained. Since the oxide multilayer film to which chemicals stoichiometry was equal at low temperature is obtained very simply and can produce also on an organic group board, a light weight, the antireflection film of high intensity, and a Heat wire reflection film are producible. According to the present invention, since a specified shape object can be formed at low temperature by exploitation of light energy, by the conventional method, the organicity / inorganic complex which was difficult to produce, and a lamination structure can be formed. Therefore, performances, such as flexible nature which employed the feature of both an organic matter and an inorganic substance efficiently, are securable. Since a coating layer with predetermined shape and a predetermined function, etc. can moreover be continuously formed at low temperature, moreover efficiency is well economical and usefulness is industrially high.

[Brief Description of the Drawings]

Drawings 2 are the lineblock diagram of a film deposition system which used Drawing 1 for the example of the 1 present invention, and a process flow figure showing the formation method of the polymers metal oxide of the present invention, The diagram in which Drawing 3 shows a wavelength and absorbing capacity, and Drawing 4 are a diagram showing the relation between a wavelength and light irradiation time, and Drawing 5, Specific inductive capacity of the metal oxide film which formed the diagram, and 6th [ The ] figure~figure 9 showing the relation between a wave number and absorbing capacity by various kinds of methods, The figure of TaOx composition of electric strength and C content and Drawing 10 (a) and (b) are the sectional view and top view of an electroluminescence element, In the sectional view of an integrated circuit device, and Drawing 13, the sectional view of a thin film capacitor and Drawing 12 are [ Drawing 11 ] a sectional view of an optical disc, and Drawing 14, The section 82-figure of 5iO2-TiO2 antireflection film produced on the polyethylene board, and Drawing 15, The sectional view of the In20-8nO2 Heat wire reflection film produced on the polyethylene board, Drawings 17 are the lineblock diagram of the molding equipment of a specified shape object which used Drawing 16 for the present invention, and a lineblock diagram of the dew condensation prevention plate produced by the method of the present invention, The figure and Drawing 21 in which the section schematic diagram of the touch-panel structure which produced Drawing 18 by the present invention, and Drawing 19 show the test result of oil resistance [ Drawing / the sectional view of a plastic optical fiber with a protective film and / 20 ] are flowcharts of resin prevention of a semiconductor device, In the sectional view of a plastic lens with a protective film, and Drawing 24, Drawings 22 are [ the construction drawing of the TazO5 thin-film capacitor for high frequency and Drawing 23 / the sectional view of a semiconductor device and Drawing 26 of the sectional view of the silicon chip on a printed circuit board and Drawing 25 ] sectional views of a liquid crystal display. 1 ... box, 2 ... light irradiation device, 3 ... monochrome meter, 4 ... immersion apparatus, 4 ... Star sea, 6 ... a beaker, and 7 and buck, 8 ... mirror, 9 ... substrate, 10 .. churning child, 11 ... tantalum pentoxide (T a 205) film. 12 ... 5iOz board, 13 ... glass substrate, 14 ... transparent conductive film, 15 ... the 1st insulating layer, 16 ... a luminous layer and 83 17 ... the 2nd insulating layer, 18 ... top electrode, 19 ... S] board, 2 O-TazO6 film, a 21=4Q electrode, 22 .. Beaker made from stainless steel, 23 .. T a 205 film, 24 ... S1 substrate, 25 .. SiO2 and 26.Amicro electrode, 27 ... 5iOz film, 28 ... PMMA board, 29 ... recording medium, 30 .. spacer, 31 ... polyethylene board, 32 .. 5iOz film, 33 .. T i and 02 films. 34 ... polyethylene board, 35 ... In2O film, 36 ... 5nOz film, 61 .. light source, 62 ... substrate, 63 ... base plate supporter, 64 ... sample solution, 65 ... sample solution, 66 ... churning child, 67 ... Star sea, 68 ... box, 69 ... atmosphere regulation part, 70 ... acrylic resin, 71 ... indium tin oxide layer (ITO layer), 72 ... poly acrylate layer, 73 ... polyester sheet, 74 ... ITO film, 75 .. epoxy acrylate spacer, 81 ... protective film, 82 .. organic resin part, 83 ... a blood part and 84 core parts, 91 ... leadframe, 92 .. Au wire, 93 ... Au-Si alloy, 94 .. chip, 95 .. An inorganic protective film, 96 =-x Poxy resin, 101 Fe-42%nickel board, 102- T a 20B, 103 and 4Q Electrode, 111 ... Plastic 1 Nones, 112 .. protective film, 121 ... printed circuit board, 122 ... an electrode, and 123 and dielectric layer, 124 ... silicon chip, 131 ... silicon chip, 132 ... bonding wire, 133 ... lead, 134 ... SiO2 film, and 135 and copper board, 136 ... glass for seals, 137 ... metal layer, 138 ... cap, 139 ... a cooling fin and 140 ... an adhesion layer and 141 ... a transparent electrode, 142 and a color filter, and 143 ... a glass substrate and 144 .. a polarizing plate and 145 ... an electrochromatic display panel and 146 -- about .. Drawing 10 (a) Drawing 12 24 ... S1 substrate 25 ... S+0□ 26 ... At electrode 27...5I02 film Drawing 11 21 ... At electrode Drawing 13 28 ... PMMA board 29 ... Recording medium 3Q ... Spacer Drawing 14 31 ... Layer 33 which contains polyethylene board 32...5I02 so much ... Drawing 15 of a layer which contains TiO2 so much 34 ... Polyethylene board 35 ... Layer 36 which contains In and o so much ... Layers animal which contains SnO2 so much ml The 21st Figure <Process> 91 ... Leadframe 92 ... Au wire 93-Au-5i alloy 94 ... Chip 95 ... Inorganic protective film 96 ... Drawing 23 of an epoxy resin 111 ... Plastic lens 112 ... Protective film The 22nd Figure 101- Fe-42%N 102- Ta20s 103 ... At electrode Board The 24th Figure 121 ... Printed circuit board 122 ... Electrode 123 ... Dielectric layer 124 ... Silicon chip