Optical detector

The present invention relates to detectors for optical detection of radiation, particularly in the infrared spectral range, and in particular to sensing at least one optically conceivable property of an object. More particularly, the detector can be used to determine transmission, absorption, emission, reflectance and/or position of at least one object. Further, the invention relates to human-machine interfaces, entertainment devices, scanning systems, tracking systems, stereoscopic systems and cameras. Further, the present invention relates to methods of manufacturing photodetectors and various uses of photodetectors. Such devices, methods and uses can be employed, for example, in various fields of everyday life, games, traffic technology, spatial mapping, manufacturing technology, security technology, medical technology or scientific fields. However, further applications are possible.

Optical detectors designed specifically for detection in the infrared spectral region (IR detectors) typically consist of a thin layer of lead sulfide (PbS) or lead selenide (PbSe) photoconductor deposited on a transparent substrate. have. In order to achieve high performance, it is demonstrated herein that the photoconductive layer is a relatively thin layer, yet is at least partially transparent, especially to the long wavelengths of the incident light beam. Since the IR spectral range includes wavelengths from 760 nm to 1000 μm, a large partition of the incident light can be lost due to this during the measurement application. Therefore, it is known to place a reflective gold coating on the backside of the glass substrate to reduce this incident light loss during measurements with an IR detector. However, placing an additional gold layer on the back side of the glass substrate requires complex manufacturing steps.

WO2016/120392A1 discloses a longitudinal light sensor designed to generate at least one sensor signal dependent on the illumination of the sensor area. According to the so-called "FiP effect", the sensor signal depends on the geometry of the illumination, in particular on the beam cross-section of the illumination on the sensor area, given the same total power of illumination. Furthermore, a photodetector is disclosed which has at least one evaluation device designed to generate at least one item of geometric information from the sensor signal, in particular at least one item of geometric information about the illumination and/or the object. ing. Here, the sensor area of the longitudinal photosensor comprises a photoconductive material, the electrical conductivity in the photoconductive material being dependent on the beam cross section of the light beam in the sensor area, given the same total power of illumination. do. The longitudinal sensor signal therefore depends on the conductivity of the photoconductive material. Preferably, the photoconductive material is lead sulfide (PbS), lead selenide (PbSe), lead telluride (PbTe), cadmium telluride (CdTe), indium phosphide (InP), cadmium sulfide (CdS), Cadmium Selenide (CdSe), Indium Antimonide (InSb), Mercury Cadmium Telluride (HgCdTe; MCT), Copper Indium Sulfide (CIS), Copper Indium Gallium Selenide (CIGS), Zinc Sulfide (ZnS), Zinc Selenide ( ZnSe), or copper zinc tin sulfide (CZTS). Furthermore, solid solutions and/or doped variants thereof are also possible. Further disclosed is a lateral photosensor having a sensor region, the sensor region comprising a layer of photoconductive material preferentially embedded between two transparent conductive oxide layers and at least two electrodes. and Preferably, at least one of the electrodes is a segmented electrode having at least two partial electrodes, the lateral sensor signal provided by said partial electrodes being the x- and/or y-position of the incident light beam within the sensor area. indicates

US2014/124782A1 describes substrates constructed to include semiconductor materials such as Si, Ge, or Si/Ge, as well as readout integrated circuits, as well as chalcogenide materials that can function as both absorber and conversion layers. a sensor layer electrically connected to the sensor layer and configured to detect a change in resistance of the sensor layer that can be caused by incident infrared radiation or heat generated therefrom; A photodetector is disclosed that includes an intervening layer disposed therebetween, said intervening layer having a reflective layer and a separating layer sequentially laminated on said substrate.

US2012/146028A1 describes a substrate, in particular a low-alkali glass substrate, or a translucent glass substrate such as a quartz substrate, a base layer as a substrate layer, a semiconductor layer having at least n-type and p-type regions as a sensor layer, and a reflective layer. wherein a portion of the incident light that has passed through said semiconductor layer continues through the base layer and finally reaches the top surface of the metal oxide layer. further discloses. Since the upper surface of the metal oxide layer has random unevenness, the incident light cannot pass through the metal oxide layer, but rather the metal oxide layer diffusely reflects the incident light.

Despite the advantages that the devices described above contain, there remains a need for improvements in optical sensors and spatial detectors that are simple, cost effective, and still reliable.

<p>The problem solved by the present invention is therefore to define an apparatus and method for optical detection that at least substantially avoids the disadvantages of known apparatus and methods of this kind.</p><p>In particular for sensing optical radiation in the infrared spectral range, in particular at least one of transmittance, absorptance, emissivity and reflectance, in particular for detecting optical radiation in the infrared spectral range, It would be desirable to provide an improved photodetector that is simple, cost effective, yet reliable. Thereby, the photodetectors are arranged in such a way as to reduce or avoid loss of incident light as much as possible, especially from the infrared spectral range, and the photodetectors are manufactured by applying simple manufacturing methods. It is preferable to obtain</p>

<p>This problem is solved by the features of the independent claims of the invention. Advantageous developments of the invention, which can be implemented individually or in combination, are indicated in the dependent claims and/or the following description and detailed embodiments.</p><p>As used herein, the expressions "having," "including," or "contains," as well as grammatical variations thereof, are used in a non-exclusive manner. Thus, the phrases "A has B" and "A comprises B" or "A contains B" mean that in addition to B, A contains one or more further components and/or constituents. It can refer both to the fact that it contains and to the fact that there are no other components, constituents or elements in A in addition to B.</p><p>In a first aspect of the invention, a photodetector for optical detection of an incident light beam is disclosed. Here, the photodetector according to the invention comprises: - a circuit carrier designed to carry at least one layer; - a reflective layer arranged in a partition of said circuit carrier to reflect an incident light beam. a reflective layer, thereby generating at least one reflected light beam; - a substrate layer directly or indirectly adjacent to said reflective layer, for said incident and reflected light beams; a substrate layer which is at least partially transparent; - a sensor layer disposed on said substrate layer, wherein at least one sensor signal depends on the illumination of said sensor layer by said incident and reflected light beams; and an evaluation device designed to generate at least one item of information by evaluating the sensor signal.</p><p>Here, the configurations listed above may be separate configurations. Alternatively, two or more of the configurations listed above can be combined into one configuration. Preferably, the evaluation device may be formed as a separate evaluation device independent of other optical components, but preferably connected to the sensor layer for receiving sensor signals. However, other types of configurations are also feasible.</p><p>As commonly used, the term "photodetector" may be specifically designed for detecting at least one wavelength within at least one partition of the spectral range, the desired partition of the spectral range being , the ultraviolet (UV) spectral range, the visible (VIS) spectral range and/or the infrared (IR) spectral range. For photodetectors according to the invention, or simply detectors according to the invention, the IR range, ie the spectral range from 760 nm to 1000 μm, is particularly preferred.</p><p>According to the invention, the detector comprises a circuit carrier designed to carry at least one layer, in particular at least one reflective layer, as explained in more detail below. As used herein, the term "circuit carrier" refers to a carrier provided to carry at least one electronic, electrical and/or optical element, especially a plurality of such elements. , the carrier is designed to mechanically support and electrically connect these electronic, electrical and/or optical elements. In preferred embodiments, the circuit carrier may be a planar circuit carrier. As commonly used, the term "planar" refers to a three-dimensional extension of the plane, usually called the "surface" of the plane and usually called the "thickness" of the plane, by a factor of at least 10, preferably at least 100. It refers to a body that includes a two-dimensional extension of more than a factor of 1000, more preferably at least 1000 times. In alternative embodiments it is also possible to apply a non-planar circuit carrier, in particular one of a flex printed circuit (FPC) or a mechatronic integrated device (MID).</p><p>In a particularly preferred embodiment, the circuit carrier is or may comprise a printed circuit board, commonly abbreviated as "PCB", which refers to a non-conductive planar substrate, sometimes referred to as a board; Onto it is applied, in particular laminated, at least one sheet of electrically conductive material, in particular a copper layer. In addition, other terms referring to this type of circuit carrier containing one or more electronic, electrical and/or optical elements are printed circuit assembly, abbreviated "PCA", printed circuit board assembly, abbreviated " Also called "PCB assembly" or "PCBA", circuit card assembly or abbreviated "CCA" or simply "card". In PCBs, the insulating substrate can include glass epoxy, and cotton paper, typically tan or brown, impregnated with phenolic resin can also be used as the substrate material. Depending on the number of sheets, the printed circuit board can be a single-sided PCB, a two-layer or double-sided PCB, or a multi-layer PCB, the different sheets being connected to each other by using so-called "vias". For purposes of the present invention, a single-sided PCB application may be sufficient; However, other types of printed circuit boards may also be applicable. Double-sided PCBs can have metal on both sides, while multi-layer PCBs can be designed by sandwiching additional metal layers between additional layers of insulating material. Furthermore, by using two double-sided PCBs, a four-layer PCB can be produced, with the two first layers used as power and ground planes and the two second layers used as signal wiring between electrical components. can be In a multi-layer PCB, the layers may be stacked alternately in the order metal, substrate, metal, substrate, metal, etc., with each metal layer etched individually and any internal vias plated before the multiple layers are stacked. obtain. Further, the vias may preferably be or include copper plated holes that can be designed as electrical tunnels through the insulating substrate. Through-hole components, which are usually attached by wire leads passing through the board and soldered to opposite tracks or traces, can also be used for this purpose.</p><p>Conductive patterns or structures, such as features such as tracks, traces, pads, vias to create connections between adjacent sheets, or solid conductive areas, are formed in selected areas of the sheet, preferably on the sheet. Partition removal can be introduced in one or more sheets by etching, silkscreen printing, photolithography, PCB milling, or laser resist ablation, among others, thereby creating the desired structure. Etching may preferably be performed by using a photoresist material coated onto the PCB, which may subsequently be exposed to produce the desired pattern. Here, the photoresist material may be adapted to protect the metal from dissolution in the etching solution. After etching, the PCB can finally be cleaned. Using this method, a particular PCB pattern can be replicated in large numbers. However, other types of isolation or connection methods are also applicable. As an example, a track introduced into a PCB can act as a wire that is fixed at a selected location, and adjacent tracks are electrically isolated on the one hand by the substrate material and on the other hand under the conditions in which the PCB is used. They can be insulated from each other by a fluid that flows, in particular air or a protective gas that may be present in the gaps between adjacent tracks. In addition, the surface of the PCB is coated with a coating, also called solder resist, which is designed to protect the metal, especially copper, in at least one sheet from harmful environmental effects such as corrosion. This reduces the likelihood of unwanted shorts that can be created by solder or bare bare wires. In multilayer PCBs, only the outer metal layers are coated in this way, since the inner metal layers are protected by the adjacent substrate layers.</p><p>Furthermore, electronic, electrical and/or optical elements or components may be arranged on the substrate by soldering, welding, deposition, etc., or additionally or alternatively, e.g. may be embedded in the circuit carrier by placing them in designated seats on the substrate and/or by deliberately removing partitions of the circuit carrier. Preferably, surface mount components, especially transistors, diodes, IC chips, resistors and capacitors, thus use conductive leads that connect each component to metal tracks, traces, or areas on the same side of the board. and attached to the PCB. Alternatively, through-hole mounting can be used especially for extended or bulky components such as electrolytic capacitors and connectors. As a further alternative, the components may be embedded within the substrate. Additionally, a PCB may further include an area on the PCB, commonly denoted by the term "silkscreen," upon which identifying characters, such as legends identifying components or test points, may be printed. Further embodiments of printed circuit boards may be found at https://en.wikipedia.org/wiki/Printed_circuit_board. However, other types of circuit carriers are also applicable.</p><p>Furthermore, according to the invention, the detector comprises a reflective layer, which is arranged over a partition of the circuit carrier, in particular a partition on the surface of the circuit carrier, more particularly a partition on the surface of the printed circuit board. be done. As used herein, the term "reflective layer" is a layer designed to reflect an incident light beam, preferably the incident light beam after being at least partially transmitted through the sensor layer. It refers to a layer designed to be able to return to This arrangement thus makes it possible to redirect the incident light beam to the sensor layer, thereby reducing the loss of incident light during measurements with this type of detector.</p><p>In a particularly preferred embodiment, the reflective layer, in particular at least the surface of the reflective layer designed to be impinged by the incident light beam, comprises a metal layer or at least a metal surface, preferably a gold, silver or copper layer. Gold, silver and copper layers are particularly preferred herein because they exhibit high reflectivity in the IR, specifically greater than 90% reflectivity over the entire IR spectral range, eg, from 760 nm to 20 μm. Moreover, the gold layer is even more preferred as it can be produced by depositing gold on the receiving surface of the circuit carrier, especially the PCB. However, other types of metal layers may also be suitable, for example aluminum, which exhibits a reflectivity of over 90% from 1 μm to 20 μm. Other common materials used in the manufacture of PCB contacts are tin, palladium, nickel, or lead, each of which can be used as a reflective layer. In addition, commonly used silk screen printing, soldering lacquers, and other organic coating layers common in PCB manufacturing exhibit good reflective properties. As an example, a white silkscreen exhibits a rather high broadband diffuse reflection, especially due to the use of white pigments in the layer. In particular, the reflective layer may exhibit a thickness of 10 nm to 100 μm, preferably 20 nm to 10 μm, more preferably 40 nm to 2 μm.</p><p>In certain embodiments, the reflective layer may be designed to reflect an incident light beam such that a diffuse reflection is thereby produced, the term "diffuse reflection" referring to the scattering of the incident light beam in different directions. related to To this end, the reflective layer may present a rough surface as opposed to the flat surface of the reflective layer. Preferably, the rough surface can exhibit a roughness Ra value of at least 0.01 μm. As a result, an incident light beam that may strike the rough surface of the reflective layer in this particular embodiment is generally reflected at a narrow angle to the surface, and thus the reflected light beam has a high probability of being absorbed. traverses a sensor layer over a longer distance. As a result, the rough surface of the reflective layer in this particular embodiment may reduce loss of incident light by redirecting the respective beams at advantageous angles to the sensor layer for favorable absorption of the incident light.</p><p>A further surface layer may be arranged between the circuit carrier and the reflective layer in order to obtain a rough surface of the reflective layer. Furthermore, in order to obtain a rough surface, the circuit carrier is treated by a roughening process, preferably brushing, etching, jet pumice or laser treatment, in particular when applied on top of the treated area, the reflective layer can increase the surface roughness of In most PCB surface finishes, surface roughness is already carried out by pre-treating metal layers, especially copper layers, in an initial cleaning step, preferentially by applying a roughening step, preferably jet pumice, etching or brushing. ing. A subsequently deposited layer, preferably comprising at least one of nickel, gold, palladium, tin, lead, aluminum, silver, or alloys thereof, may follow the roughness of the bottom copper layer. Typical roughness Ra and Rz values found in PCB copper layers are on the order of 0.3 to 0.4 μm for Ra and about 3 to 4 μm for Rz.</p><p>Further according to the invention, the detector comprises a sensor layer comprising at least one photosensitive material, the sensor layer being able to serve as the sensor area of the detector. As used herein, a "sensor area" is considered a detector partition designed to receive illumination of the detector by a light beam, such that the illumination received by the sensor area produces at least one sensor signal. The triggering and generation of the sensor signal can be governed by a defined relationship between the sensor signal and how the sensor area is illuminated.</p><p>A sensor signal is generally any signal indicative of the desired optical property to be measured, in particular the transmittance, absorption, emission and reflectance of an incident light beam, or the position of an object. As an example, the sensor signal may be or include a digital signal and/or an analog signal. As an example, the sensor signal may be or include a voltage signal and/or a current signal. Additionally or alternatively, the sensor signal may be or include digital data. A sensor signal may include a single signal value and/or a series of signal values. A sensor signal is any signal obtained by combining two or more individual signals, such as by averaging two or more signals and/or by forming the quotient of two or more signals. It can contain more.</p><p>In preferred embodiments, the at least one photosensitive material comprised in the sensor layer may be selected from the group consisting of dye solar cells, photoconductive materials, and quantum dots, with photoconductive materials being particularly preferred. For further details regarding dye solar cells, reference can be made to WO2012/110924A1 and WO2014/097181A1.</p><p>Specifically based on WO2016/120392A1, the term "photoconductive material" as used herein refers to a material capable of sustaining an electric current and thus exhibiting a certain electrical conductivity, in which In particular the electrical conductivity depends on the irradiation of the material. Alternately, the term "photoresistive material" may also be used to denote the same class of materials, since electrical resistivity is defined as the reciprocal of electrical conductivity. Thus, the photoconductive material preferably includes inorganic photoconductive materials, particularly thin film semiconductor or nanoparticle photoconductive materials; organic photoconductive materials, particularly organic semiconductors; combinations, solid solutions, and/or thereof. Doping variations may be included. As used herein, the term refers to the state of a photoconductive material in which at least one solute can be included in a solvent whereby a homogeneous phase is formed in which the Essentially, the crystal structure of the solvent can be unchanged by the presence of the solute. As an example, binary cadmium telluride (CdTe) can be dissolved in zinc telluride (ZnTe) leading to Cd1-xZnxTe, where the value of x can range from 0 to 1. As used further herein, the term "doping variant" means that a single atom apart from the constituents of the material itself is introduced into the trace within the crystal where it is occupied by an intrinsic atom in the undoped state. It can refer to the state of a photoconductive material.</p><p>In this regard, inorganic photoconductive materials are in particular selenium, tellurium, selenium-tellurium alloys, metal oxides, group 4 elements or compounds, i.e. elements belonging to group 4 or having at least one group 4 element compounds, III-V compounds, i.e. compounds with at least one group 3 element and at least one group 5 element, II-VI compounds, i.e., on the one hand, at least one group 2 element or one or more of chalcogenides and/or compounds having at least one Group 12 element while having at least one Group 6 element. However, other inorganic photoconductive materials may be suitable as well.</p><p>As mentioned above, the chalcogenides are preferably selected from the group comprising sulfide chalcogenides, selenide chalcogenides, telluride chalcogenides, ternary chalcogenides, quaternary and higher chalcogenides, and may be suitable for use in the sensor layer. is preferred. The term "chalcogenide" as used generally refers to compounds that may contain Group 16 elements of the periodic table in addition to oxides, namely sulfides, selenides, and tellurides. In particular, the photoconductive material may be a sulfide chalcogenide, preferably lead sulfide (PbS), a selenide chalcogenide, preferably lead selenide (PbSe), a telluride chalcogenide, preferably cadmium telluride (CdTe), or a ternary chalcogenide, preferably tellurium. is or may contain mercuric zinc (HgZnTe; MZT). A sensor layer comprising one of the photoconductive materials described above is preferably used as an infrared sensor, since at least the preferred photoconductive materials described above are generally known to exhibit unique absorption properties within the infrared spectral range. can be However, other embodiments and/or other photoconductive materials, particularly the photoconductive materials described below, may also be feasible.</p><p>In particular, sulfide chalcogenides are lead sulfide (PbS), cadmium sulfide (CdS), zinc sulfide (ZnS), mercury sulfide (HgS), silver sulfide (Ag₂S), manganese sulfide (MnS), bismuth trisulfide (Bi₂S.₃), antimony trisulfide (Sb₂S.₃), arsenic trisulfide (As₂S.₃), tin (II) sulfide (SnS), tin (IV) disulfide (SnS₂), indium sulfide (In₂S.₃), copper sulfide (CuS or Cu₂S), cobalt sulfide (CoS), nickel sulfide (NiS), molybdenum disulfide (MoS)₂), iron disulfide (FeS₂), and chromium trisulfide (CrS₃).</p><p>In particular, selenide chalcogenides are lead selenide (PbSe), cadmium selenide (CdSe), zinc selenide (ZnSe), bismuth triselenide (Bi₂Se₃), mercury selenide (HgSe), antimony triselenide (Sb₂Se₃), arsenic triselenide (As₂Se₃), nickel selenide (NiSe), thallium selenide (TlSe), copper selenide (CuSe or Cu₂Se), molybdenum diselenide (MoSe₂), tin selenide (SnSe), cobalt selenide (CoSe), and indium selenide (In₂Se₃). Furthermore, solid solution and/or doped versions of the compounds mentioned above or other such compounds may also be feasible.</p><p>In particular, the telluride chalcogenides are lead telluride (PbTe), cadmium telluride (CdTe), zinc telluride (ZnTe), mercury telluride (HgTe), bismuth telluride (Bi₂Te₃), arsenic tritelluride (As₂Te₃), antimony tritelluride (Sb₂Te₃), nickel telluride (NiTe), thallium telluride (TlTe), copper telluride (CuTe), molybdenum ditelluride (MoTe₂), tin telluride (SnTe), cobalt telluride (CoTe), silver telluride (Ag₂Te), and indium telluride (In₂Te₃). Additionally, solid solution and/or doped versions of the above compounds or other such compounds may also be feasible.</p><p>In particular, the ternary chalcogenides are mercury cadmium telluride (HgCdTe; MCT), mercury zinc telluride (HgZnTe), mercury cadmium sulfide (HgCdS), lead cadmium sulfide (PbCdS), lead mercury sulfide (PbHgS), copper indium disulfide (CuInS₂;CIS), cadmium selenide sulfide (CdSSe), zinc selenide sulfide (ZnSSe), thallium selenide sulfide (TlSSe), cadmium zinc sulfide (CdZnS), cadmium chromium sulfide (CdCr₂S.₄), mercury chromium sulfide (HgCr₂S.₄), copper chromium sulfide (CuCr₂S.₄), cadmium lead selenide (CdPbSe), copper indium diselenide (CuInSe₂), indium gallium arsenide (InGaAs), lead monoxide sulfide (Pb₂OS), lead monoxide selenide (Pb)₂OSe), lead selenide sulfate (PbSSe), arsenic selenide telluride (As2Se2Te), cadmium selenite (CdSeO)₃), cadmium zinc telluride (CdZnTe), and cadmium zinc selenide (CdZnSe), further combinations according to the application of the above binary chalcogenides and/or compounds belonging to the group III-V binary compounds. Additionally, solid solution and/or doped versions of the above compounds or other such compounds may also be feasible.</p><p>With respect to quaternary or higher chalcogenides, such materials may be selected from quaternary or higher chalcogenides that may already be known to exhibit suitable photoconductive properties. In particular, Cu(In,Ga)S/Se₂or Cu₂ZnSn(S/Se)₄A compound having a composition of is suitable for this purpose.</p><p>With respect to III-V compounds, semiconductor materials of this kind are indium antimonide (InSb), boron nitride (BN), boron phosphide (BP), boron arsenide (BAs), aluminum nitride (AlN), aluminum phosphide ( AlP), aluminum arsenide (AlAs), aluminum antimonide (AlSb), indium nitride (InN), indium phosphide (InP), indium arsenide (InAs), indium antimonide (InSb), gallium nitride (GaN), It may be selected from the group comprising gallium phosphide (GaP), gallium arsenide (GaAs), and gallium antimonide (GaSb). Additionally, solid solution and/or doped versions of the above compounds or other such compounds may also be feasible.</p><p>With respect to II-VI compounds, such semiconductor materials are cadmium sulfide (CdS), cadmium selenide (CdSe), cadmium telluride (CdTe), zinc sulfide (ZnS), zinc selenide (ZnSe), zinc telluride ( ZnTe), mercury sulfide (HgS), mercury selenide (HgSe), mercury telluride (HgTe), cadmium zinc telluride (CdZnTe), mercury cadmium telluride (HgCdTe), mercury zinc telluride (HgZnTe), and selenide It may be selected from the group comprising mercury zinc (CdZnSe). However, other group II-VI compounds may also be suitable. Additionally, solid solutions of the above compounds or other such compounds may also be feasible.</p><p>With respect to metal oxides, this class of semiconductor materials includes known metal oxides capable of exhibiting photoconductivity, in particular copper(II) oxide (CuO), copper(I) oxide (CuO₂), nickel oxide (NiO), zinc oxide (ZnO), silver oxide (Ag₂O), manganese oxide (MnO), titanium dioxide (TiO)₂), barium oxide (BaO), lead oxide (PbO), cerium oxide (CeO₂), bismuth oxide (Bi₂O₃), cadmium oxide (CdO), ferrite (Fe₃O₄), and perovskite oxides (ABO₃, where A is a divalent cation and B is a tetravalent cation). In addition, ternary, quaternary or higher metal oxides may also be applied. Additionally, solid solutions and/or doped versions of the above compounds or other such compounds, which may be stoichiometric or non-stoichiometric, may also be suitable. As will be explained in more detail below, it may be preferable to select metal oxides that can also exhibit transparency or translucency at the same time.</p><p>With respect to Group 4 elements or compounds, such semiconductor materials are selected from the group comprising doped diamond (C), doped silicon (Si), silicon carbide (SiC), and silicon germanium (SiGe), wherein the semiconductor material may be selected from crystalline materials, microcrystalline materials or, preferably, amorphous materials. The term "amorphous" as used generally refers to a non-crystalline, allotropic phase of a semiconductor material. In particular, the photoconductive material can comprise at least one hydrogenated amorphous semiconductor material, wherein the amorphous material has been further passivated by applying hydrogen to the material, thereby being bound by theory. Although we do not wish to, it is believed that the number of many dangling bonds within the material has been reduced by several orders of magnitude. In particular, the hydrogenated amorphous semiconductor material is made from hydrogenated amorphous silicon (a-Si:H), hydrogenated amorphous silicon carbon alloy (a-SiC:H), or hydrogenated amorphous germanium silicon alloy (a-GeSi:H). can be selected from the group consisting of However, other types of materials such as hydrogenated microcrystalline silicon (μc-Si:H) can also be used for this purpose.</p><p>Alternatively or additionally, the organic photoconductive material may in particular be or comprise an organic compound, particularly an organic compound known to have suitable photoconductive properties, preferably commonly used in xerography. It may be polyvinyl carbazole, which is a compound to be used. However, numerous other organic molecules may also be feasible, which are described in more detail in WO2016/120392A1.</p><p>In a further preferred embodiment the photoconductive material may be provided in the form of a colloidal film which may contain quantum dots. This particular state of photoconductive material, which may exhibit slightly or significantly altered chemical and/or physical properties with respect to uniform layers of the same material, may therefore be denoted colloidal quantum dots (CQDs). As used herein, the term "quantum dot" refers to a state of photoconductive material that is confined, e.g., in all three spatial dimensions, to a small volume commonly referred to as a "dot." Refers to a state that can contain conductive particles such as electrons or holes that are in contact.</p><p>Here, the quantum dots can exhibit a size that can be briefly thought of as the diameter of a sphere that can be approximated with the volume of the aforementioned particles. In this preferred embodiment, the quantum dots of the photoconductive material may in particular exhibit a size in the range 1 nm to 100 nm, preferably 2 nm to 100 nm, more preferably 2 nm to 15 nm, provided that certain thin films actually The included quantum dots can exhibit a size smaller than the thickness of the particular thin film. In fact, quantum dots can comprise nanometer-scale semiconductor crystals that can be capped with surfactant molecules and dispersed in solution to form a colloidal film. Here, the surfactant molecules are chosen to allow the average distance between individual quantum dots in the colloidal film to be determined as a result of the approximate spatial extension of the specifically selected surfactant molecules. can be Furthermore, depending on the synthesis of the ligand, quantum dots can be hydrophilic or hydrophobic. CQDs can be produced by applying gas-phase, liquid-phase, or solid-phase approaches. This allows various methods for the synthesis of CQDs by employing known processes such as thermal spraying, colloidal synthesis, or plasma synthesis, among others. However, other production processes are also feasible.</p><p>Further in this preferred embodiment, the photoconductive material used for the quantum dots is preferably from one of the photoconductive materials mentioned above, more specifically lead sulfide (PbS), lead selenide (PbSe), lead telluride (PbTe), cadmium telluride (CdTe), indium phosphide (InP), cadmium sulfide (CdS), cadmium selenide (CdSe), indium antimonide (InSb), mercury cadmium telluride ( HgCdTe; MCT), copper indium sulfide (CIS), copper indium gallium selenide (CIGS), zinc sulfide (ZnS), zinc selenide (ZnSe), perovskite structural materials ABC₃wherein A represents an alkali metal or organic cation, B represents Pb, Sn or Cu, and C represents halides and copper zinc tin sulfide (CZTS). Additionally, solid solution and/or doped versions of the above compounds or other compounds of this type may be feasible. Core-shell structures of this type of material may also be feasible. However, other photoconductive materials and the like may be feasible.</p><p>Here, in particular the sensor layer comprising at least one photosensitive material can be produced by applying at least one deposition method for depositing the sensor layer on the surface of the substrate layer, wherein the deposition method is , preferably chemical bath deposition, vacuum deposition, sputtering, atomic layer deposition, chemical vapor deposition, spray pyrolysis, electrodeposition, anodization, electrical conversion, electroless immersion growth, continuous ion adsorption and reaction, molecular beam epitaxy, selected from the group consisting of molecular vapor phase epitaxy, liquid phase epitaxy, inkjet printing, gravure printing, flexographic printing, screen printing, stencil printing, slot die coating, doctor blade, and solution-gas interface techniques. As a result, the sensor layer can exhibit a thickness in the range from 10 nm, preferably 100 nm, especially from 300 nm to 100 μm, preferably up to 10 μm, especially up to 5 μm, but still for example in the IR spectral range, i.e. from 760 nm to 1000 μm. up to, especially in the MidIR spectral range, ie 1.5 μm to 15 μm, such as 1/2 or 1/4 wavelength below the wavelength of the incident beam or part thereof. As a result, the loss of incident light can be substantial, especially as long as the incident light beam strikes the sensor layer only once, but as discussed elsewhere herein, the reflective layer It can be corrected by using</p><p>In particularly preferred embodiments, the sensor layer may be directly or indirectly attached to the substrate layer, in particular such that no gaps are left or created between the sensor layer and the substrate layer. As a result, the sensor layer can preferably be exactly one continuous sensor layer. To allow high transmission of both the incident and reflected light beams, the substrate layer is at least partially transparent to both the incident and reflected light beams. For this purpose, the substrate layer may preferably comprise a substrate material which may be chosen from glass, quartz, silicon (Si), transparent conductive oxides (TCO) or transparent organic polymers. In particular, transparent conductive oxides (TCO) are made of aluminum oxide (Al₂O₃), titanium oxide (TiO₂), indium tin oxide (ITO), fluorine-doped tin oxide (SnO₂:F; FTO), aluminum-doped zinc oxide (AZO), magnesium oxide (MgO), or perovskite transparent conductive oxide. However, other types of substrate materials can also be employed as substrate layers, depending on the desired wavelength range.</p><p>In certain embodiments, detectors according to the present invention may further comprise an adhesion layer that may be arranged between the substrate layer and the reflective layer. The commonly used term "adhesive layer" refers to an additional layer that can be placed between two adjacent layers, where the adhesive layer resists separation, e.g., adheres the adjacent layers together. It contains an adhesive material designed to assemble two adjacent layers such that separation is only possible with the application of increased force compared to bonding with an agent. Here, the adhesive layer may in particular be applied in such a way that no gaps are left or created between the reflector layer and the adhesive layer on the one hand and the adhesive layer and the substrate layer on the other hand. Again, the adhesive layer can preferably be exactly one continuous layer that can be placed adjacently with respect to both the substrate layer and the reflective layer. Here, the adhesive layer may be at least partially transparent to the incident light beam, or alternatively partially reflective to the incident light beam. Both types of embodiments thus allow an incident light beam to be reflected through the substrate layer towards the sensor layer as desired. To this end, the adhesive layer may exhibit a thickness that may be selected to provide a close and stable connection between the substrate layer and the reflective layer. Here, the adhesive layer may in particular comprise an organic adhesive, preferably an organic adhesive which may be filled with diffusely reflecting or specularly reflecting particles. In particular, depending on the material chosen for the adhesion layer, the thickness of the adhesion layer may thus be between 100 nm and 10 μm, more preferably between 250 nm and 5 μm.</p><p>In further embodiments, the adhesive layer may alternatively or additionally exhibit one or more chemical or physical properties that may prove advantageous for the optical sensor. Thus, in a preferred embodiment, the adhesive layer is specifically adapted to reduce the refractive index difference between the substrate layer and the reflective layer by being or including an optical antireflective layer. Thereby, it can have antireflection optical properties. Further properties are also possible.</p><p>Furthermore, according to the invention, the detector comprises an evaluation device designed to generate at least one information item provided by the incident light beam by evaluating the sensor signal. The term "evaluator" as used herein generally refers to any device designed to generate information items. As an example, the evaluation device may include one or more integrated circuits, such as one or more application specific integrated circuits (ASICs), and/or one or more digital signal processors (DSPs), and/or one one or more Field Programmable Gate Arrays (FPGA) and/or one or more data processing devices such as one or more computers, preferably one or more microcomputers and/or microcontrollers , or may comprise these. Additional components, e.g. one or more pre-processing devices and/or for receiving and/or pre-processing the sensor signal, e.g. one or more AD converters and/or one or more filters data collection devices, such as one or more devices for Additionally, the evaluation device may include one or more data storage devices. Additionally, as outlined above, the evaluation device may include one or more interfaces, such as one or more wireless interfaces and/or one or more wired interfaces.</p><p>The at least one evaluation device may be adapted to run at least one computer program, for example at least one computer program that performs or supports the step of generating the information item. As an example, one or more algorithms may be implemented that may perform a predetermined transformation to object position by using sensor signals as input variables.</p><p>The evaluation device can include in particular at least one data processing device, in particular an electronic data processing device, which can be designed to generate an information item by evaluating sensor signals. The evaluation device is therefore designed to use the sensor signals as input variables and, by processing these input variables, to generate the information item provided by the incident light beam. Processing can be performed in parallel, serially, or even in a hybrid manner. The evaluator may use any process for generating these information items, for example by calculation and/or by using stored and/or known relationships. In addition to the sensor signal, one or more further parameters and/or information items may influence said relationship, for example at least one information item relating to the modulation frequency. Said relationship may be determined or determinable empirically, analytically, or semi-empirically. Particularly preferably, said relationship comprises at least one calibration curve, at least one set of calibration curves, at least one function or a combination of the above possibilities. One or more calibration curves may be stored, eg, in a data storage device and/or table, eg, in the form of a set of values and their associated function values. Alternatively or additionally, however, at least one calibration curve may be stored, for example in parameterized form and/or in the form of a functional equation. Other relationships for processing sensor signals into information items may be used. Alternatively, at least one combined relationship for processing sensor signals is feasible. Various possibilities are conceivable, and it is also possible to combine them.</p><p>As an example, the evaluation device can be designed as programming for determining information items. The evaluation device can in particular comprise at least one computer, for example at least one microcomputer. Furthermore, the evaluation device can contain one or more volatile or non-volatile data memories. Alternatively or additionally to the data processing device, in particular the at least one computer, the evaluation device may comprise one or more further electronic components designed to determine the information items, such as an electronic table, in particular at least one lookup Tables and/or at least one application specific integrated circuit (ASIC) and/or at least one digital signal processor (DSP) and/or at least one field programmable gate array (FPGA) and/or the like.</p><p>The detector has at least one evaluation device. In particular, the at least one evaluation device also completely or It can be designed to be partially controlled or driven. The evaluation device can be designed in particular to carry out one or at least one measurement cycle in which a plurality of sensor signals, eg successive sensor signals with different modulation frequencies of the illumination, are acquired.</p><p>The evaluation device is designed to generate at least one information item provided by the incident light beam by evaluating at least one sensor signal, as described above. In a particular embodiment, said item of information may comprise at least one item of information relating to the longitudinal position of the object and/or, if applicable, the lateral position of the object. An "object" may generally be any one object selected from living and non-living objects. Thus, by way of example, said at least one object may comprise one or more articles and/or one or more portions of articles. Additionally or alternatively, the object may be one or more living organisms and/or one or more parts thereof, for example one or more body parts of a human and/or animal such as a user. , or may include them.</p><p>As used herein, "position" generally refers to any item of information regarding the position and/or orientation of an object in space. For this purpose, as an example, one or more coordinate systems may be used, and the position of an object may be determined using one, two, three or more coordinates. As an example, one or more Cartesian and/or other types of coordinate systems may be used. As an example, the coordinate system may be a detector coordinate system in which the detector has a predetermined position and/or orientation. The position of the object may be static or may further comprise at least one motion of the object, eg relative motion between the detector or part thereof and the object or part thereof. In this case, relative motion may generally include at least one linear motion and/or at least one rotational motion. Information items of movement are also obtained, for example, by comparing at least two pieces of information obtained at different times, for example at least one position information, also at least one velocity information and/or at least one acceleration information, for example or at least one item of information relating to at least one relative velocity between the part thereof and the detector or part thereof. In particular, the at least one position information item generally relates to the distance between the object or part thereof and the detector or part thereof, in particular the optical path length; the object or part thereof and any transfer device or part thereof; an item of information about the distance or optical distance between the parts; an item of information about the position of the object or parts thereof with respect to the detector or parts thereof; an item of information about the orientation of the object and/or parts thereof with respect to the detector or parts thereof items; items of information relating to the relative movement between an object or part thereof and a detector or part thereof; items of information relating to the two- or three-dimensional spatial form of an object or part thereof, in particular the geometry or form of the object, from can be selected. Generally, therefore, the at least one item of location information is, for example, information about at least one location of an object or at least a part thereof;</p><p>At least one item of location information may be specified, for example, in at least one coordinate system, such as the coordinate system in which the detector or part thereof resides. Alternatively or additionally, the position information may simply include, for example, the distance between the detector or part thereof and the object or part thereof. Combinations of the above possibilities are also conceivable.</p><p>In a particularly preferred embodiment of the invention, the detector can further comprise at least two separate electrical contacts designed to contact the sensor layer and transmit the sensor signal to the evaluation device via the circuit carrier. . As used herein, the term "in contact with the sensor layer" refers to an electrically conductive connection between each contact and the sensor layer, each electrical contact being located at a location on the surface of the sensor layer. refers to a conductive connection configured to For this purpose, at least two individual electrical contacts may be applied at different locations on the layer of photoconductive material, in particular in such a manner that the at least two individual electrical contacts are electrically isolated from each other. . Here, each of said at least two electrical contacts is preferably , can be configured such that direct electrical contact between each electrode and the sensor layer is achieved. In an alternative embodiment, the sensor layers can be arranged in a configuration that can enable contactless transmission of sensor signals to an evaluation device.</p><p>As a result, upon impingement of the sensor area by the light beam, the at least two electrical contacts can provide the evaluation device with a sensor signal that depends on the illumination of the sensor layer. Here, the electrical contact can comprise a vapor deposited metal layer which can be readily provided by known vapor deposition techniques. In particular, the deposited metal layer can include one or more of gold, silver, aluminum, platinum, magnesium, chromium, or titanium. Alternatively, at least one of the electrical contacts can include a highly conductive graphene layer.</p><p>In this type of material, current can be conducted through the material via at least one first electrical contact to at least one second electrical contact, where the first electrical contact is insulated from the second electrical contact. Alternatively, both the first electrical contact and the second electrical contact may be directly connected to the material. For this purpose the direct connection can be made by any known means known from the state of the art, e.g. wire bonding, plating, welding, soldering, ultrasonic thermocompression, stitch bonding, ball bonding, wedge bonding, compliant bonding. , thermocompression bonding, anodic bonding, direct bonding, plasma activated bonding, eutectic bonding, glass frit bonding, adhesive bonding, transient liquid phase diffusion bonding, surface activated bonding, tape automated bonding, or highly conductive materials, especially gold. , beryllium-doped gold, copper, aluminum, silver, platinum, or palladium, as well as alloys comprising at least one of the aforementioned metals, deposited on the contact regions.</p><p>In a particularly preferred embodiment, wire bonds are used to contact each electrical contact that contacts the sensor layer and a corresponding receiving contact, such as a contact that can be further arranged preferably on a circuit carrier, in particular on a printed circuit board (PCB). A direct connection can be provided to or from a receiving contact such as a pad. An arrangement of this kind allows the sensor layer to be easily brought into contact with the evaluation device and the electrical contacts can be designed to transmit the sensor signal to the circuit carrier and subsequently to the evaluation device.</p><p>In a further particularly preferred embodiment of the invention the detector may further comprise a cover layer. Here, the cover layer can be deposited over the sensor layer, preferably in direct contact with the sensor layer. In a preferred embodiment, a cover layer may be deposited over the layer such that it can completely cover the accessible surface of the sensor layer. Preferably, the cover layer can be an amorphous layer comprising at least one metal-containing compound. However, other types of cover layers may also be feasible.</p><p>Preferably, at least one deposition method is used to deposit the cover layer on the sensor layer. For this purpose, said at least one deposition method may be selected in particular from atomic layer deposition, chemical vapor deposition, plasma-enhanced chemical vapor deposition, physical vapor deposition, sol-gel deposition, or combinations thereof. Thus, the cover layer may be or include an atomically deposited layer, a chemical vapor deposited layer, or a physical or sol-gel deposited layer, or a plasma chemical vapor deposited layer. Further alternatives for cover layers may include epoxy resin layers or glass layers. As used herein, the term "atomic layer deposition", the equivalent terms "atomic layer epitaxy" or "molecular layer deposition", and their respective abbreviations "ALD", "ALE" or "MLD" are generally , is used to refer to a deposition process that can include a self-limiting process step followed by a self-limiting reaction step. Therefore, the process applied according to the present invention is sometimes called "ALD process". For further details regarding the ALD process, reference can be made to George, Chem. Rev. 110, pp. 111-131, 2010. Furthermore, the term "chemical vapor deposition", usually abbreviated as "CVD", refers to a method in which a surface of a substrate or a layer located on a substrate is exposed to at least one volatile precursor, said precursor being , can react and/or decompose on the surface to produce the desired deposits. In many cases, possible by-products can be removed by applying a gas stream over the surface. Alternatively, the PECVD process is particularly suitable for silicon nitride (Si₃N.₄) can be preferably applied as a deposition process for obtaining the film of ). Here, the term "PECVD process" refers to a specific CVD process in which the precursor can be provided as a plasma, such as by applying an electrical discharge within a reaction chamber.</p><p>As noted above, the cover layer may preferentially comprise at least one metal-containing compound. Here, the metal-containing compound can preferably contain metals, which are in particular lithium (Li), beryllium (Be), sodium (Na), magnesium (Mg), aluminum (Al), potassium ( K), calcium (Ca), scandium (Sc), titanium (Ti), vanadium (V), chromium (Cr), manganese (Mn), iron (Fe), cobalt (Co), nickel (Ni), copper ( Cu), zinc (Zn), gallium (Ga), rubidium (Rb), strontium (Sr), yttrium (Y), zirconium (Zr), niobium (Nb), molybdenum (Mo), ruthenium (Ru), rhodium ( Rh), Palladium (Pd), Silver (Ag), Cadmium (Cd), Indium (In), Tin (Sn), Cesium (Cs), Barium (Ba), Lanthanum (La), Cerium (Ce), Praseodymium ( Pr), neodymium (Nd), promethium (Pm), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy), holmium (Ho), erbium (Er), thulium ( Tm), Ytterbium (Yb), Lutetium (Lu), Hafnium (Hf), Tantalum (Ta), Tungsten (W), Rhenium (Re), Osmium (Os), Iridium (Ir), Platinum (Pt), Gold ( Au), mercury (Hg), thallium (Tl) and bismuth (Bi). In certain embodiments, metal-containing compounds can include metalloids, alternatively referred to as "metalloids," which include boron (B), germanium (Ge), arsenic (As), It may be selected from the group consisting of antimony (Sb) and tellurium (Te). Preferably, the at least one metal-containing compound is aluminum (Al), titanium (Ti), tantalum (Ta), manganese (Mn), molybdenum (Mo), zirconium (Zr), hafnium (Hf), and tungsten</p><p>Here, the at least one metal-containing compound can preferably be selected from the group comprising oxides, hydroxides, chalcogenides, pnictides, carbides, or combinations thereof. As already defined above, the term "chalcogenide" refers to a compound that may contain Group 16 elements of the periodic table other than oxides, i.e. sulfides, selenides and tellurides. Similarly, the term "pnictides" preferably refers to binary compounds, which may include Group 15 elements of the periodic table, ie nitrides, phosphides, arsenides and antimonides. As described in more detail below, the metal-containing compound preferably comprises at least one oxide, at least one hydroxide of aluminum (Al), titanium (Ti), zirconium (Zr) or hafnium (Hf) , or combinations thereof.</p><p>In one alternative embodiment, the cover layer may be or include a laminate that can have at least two adjacent layers, where one, both, some, or all of the adjacent layers are metal-containing. Adjacent layers may in particular differ in their respective compositions in such a way that they may contain one of the compounds. Here, the adjacent layers can comprise two different metal-containing compounds to provide an amorphous structure, as described above. By way of example, the cover layer may comprise alternating adjacent layers of an aluminum (Al) containing compound and a zirconium (Zr) or hafnium (Hf) containing compound. However, other combinations of metal-containing compounds are also possible. In addition, the laminate may further have additional adjacent layers that do not have any of the metal-containing compounds as described elsewhere in this application, but alternatively the metal compound, It may be or include at least one of a polymeric compound, a silicone compound, or a glass compound. Other types of materials may also be suitable here. As a result, the stack may be amorphous, but alternatively may include additional adjacent layers that are or include crystalline or nanocrystalline layers.</p><p>In particularly preferred embodiments, the cover layer can completely cover the accessible surface of the sensor layer. The cover layer is thus adapted primarily to provide encapsulation of the sensor layer. As used herein, the term "encapsulation" specifically refers to the partial or complete deterioration of the sensor layer or its partitions due to external influences, such as humidity and/or oxygen contained in the surrounding atmosphere. It may refer to a package to avoid as much as possible, preferably an airtight package. Here, the package can preferably be adapted to cover all accessible surfaces of the sensor layer, where the sensor layer is already adapted to protect the surface partition of the sensor layer. It may be considered deposited on a substrate layer. In other words, the substrate layer and the cover layer may be adapted in a cooperative manner to complete the packaging, preferably hermetic packaging, of the sensor layer.</p><p>In addition, the amorphous nature of the cover layer according to the present invention not only improves the protective encapsulation of the photoconductive material as described above, but also allows the photoconductivity of the photoconductive material to improve the cover layer on the layer of photoconductive material. The cover layer is preferentially used in the sense that the photoconductivity of the photoconductive material is significantly improved after deposition of a layer followed by heat treatment of a compound structure comprising a cover layer deposited directly on the photoconductive material. It can essentially contribute to the activation of the photoconductive properties of a photoconductive material which can be directly contacted.</p><p>Without being bound by theory, the deposition of the cover layer over the photoconductive material each not only results in direct contact between the surface of the cover layer and the photoconductive material. In addition, the heat treatment of the compound structure can encourage the material contained in the cover layer or at least the partitions thereof to partially penetrate the photoconductive material, thereby particularly revealing the detailed structure and structure of the photoconductive material. /or may have physical and/or chemical effects on the composition. It is believed that this effect allows small partitions of the material contained in the cover layer to penetrate into receptive portions of the photoconductive material, such as phase boundaries, voids or pores. This effect therefore appears to be related in particular to the amorphous structure of the cover layer.</p><p>In particularly preferred embodiments, the cover layer may exhibit a thickness of 10 nm to 600 nm, preferably 20 nm to 200 nm, more preferably 40 nm to 100 nm, most preferably 50 to 75 nm. This thickness may particularly reflect the amount of metal-containing compound in the cover layer that is advantageous in achieving its function of providing encapsulation/activation of the sensor layer. Here, the cover layer can be a conformal layer with respect to the adjacent surface of the sensor layer. As commonly used, the thickness of the conformal layer therefore follows the corresponding surface of the sensor layer within a deviation of ±50 nm, preferably ±20 nm, most preferably ±10 nm, which deviation is equal to that of the cover layer. It occurs over at least 90%, preferably at least 95%, most preferably at least 99% of the surface, thereby excluding any contamination or imperfections that may be present on the surface of the cover layer.</p><p>Additionally, the cover layer may be adapted to exhibit at least one additional function in addition to the function of providing encapsulation and/or activation. By way of example, the cover layer may exhibit a high refractive index, for example at least 1.2, preferably at least 1.5, in order to qualify as a suitable antireflection layer. As a result, it may be advantageous to choose the material used for the cover layer to be preferably optically transparent by exhibiting particularly suitable absorption properties within the desired wavelength range. On the other hand, since the substrate layer is already at least partially transparent, a wider variety of different materials can be used for the cover layer, including optically opaque materials. Further examples may include secondary light filters, scratch resistant layers, hydrophilic layers, hydrophobic layers, self-cleaning layers, anti-fog layers, and conductive layers. Other functions may also be possible.</p><p>In particular, the cover layer can act as an optical filter designed to filter out certain wavelength ranges. In this connection it is also possible to use a cover layer which is or comprises a laminate. In particular, stacks with at least two different metal oxides can be used as interference filters. As an example, aluminum oxide (Al₂O₃) and titanium oxide (TiO₂) may be well suited for such purposes.</p><p>In certain embodiments, at least a It may be further covered at least partially by at least one additional layer that is partially deposited. Preferably, said additional layers are or can exhibit additional functions and are therefore antireflection layers, secondary light filters, scratch resistant layers, hydrophilic layers, hydrophobic layers, self-cleaning layers, anti-reflection layers. At least one of a haze layer and a conductive layer may be included. Here, the person skilled in the art can easily select and provide at least one additional layer. However, other embodiments may also be possible.</p><p>In a preferred embodiment, the cover layer may partially or completely cover the electrical contacts, and may in particular be configured to be bondable to one or more leads to an external circuit or the like. Here, the electrical contacts may be bondable by using wires such as gold or aluminum wires, where the electrical contacts may preferably be bondable through the cover layer. In certain embodiments, a further adhesive layer may be provided on the electrical contacts, said further adhesive layer being particularly adapted for bonding. To this end, said further adhesion layer may comprise at least one of nickel (Ni), chromium (Cr), titanium (Ti) or palladium (Pd).</p><p>According to the present invention, the detector is preferably designed to detect electromagnetic radiation over a fairly broad spectral range, such as the ultraviolet (UV), visible and infrared (IR) spectral ranges, The infrared (IR) spectral range may be particularly preferred. Here, the following photoconductive materials can be selected for the sensor layer in the detector, among others: - UV spectral range: doped diamond (C), zinc oxide (ZnO), titanium oxide (TiO₂), Gallium Nitride (GaN), Gallium Phosphide (GaP) or Silicon Carbide (SiC);- Visible spectral range: Silicon (Si), Gallium Arsenide (GaAs), Cadmium Sulfide (CdS), Cadmium Telluride (CdTe) , copper indium sulfide (CuInS₂;CIS), copper indium gallium selenide (CIGS), copper zinc tin sulfide (CZTS);- IR spectral range: indium gallium arsenide (InGaAs), silicon (Si), germanium (Ge), cadmium telluride (CdTe) , copper indium sulfide (CuInS₂CIS), copper indium gallium selenide (CIGS), and in the NIR spectral range from 7560 nm to 1.5 μm, copper zinc tin sulfide (CZTS), where CdTe, CIS, CIGS, and CZTS are for wavelengths above 850 nm. Indium Gallium Arsenide (InGaAs) for wavelengths below 2.6 μm; Indium Arsenide (InAs) for wavelengths below 3.1 μm; Lead Sulfide (PbS) for wavelengths below 3.5 μm; Lead Selenide (PbSe) for wavelengths below 5 μm; Indium Antimonide (InSb) for wavelengths below 5.5 μm; Mercury Cadmium Telluride (MCT, HgCdTe) for wavelengths below 16 μm.</p><p>As already mentioned above, a detector for optical detection is generally a device that can be adapted to provide at least one item of information about the position of at least one object. The detector may be a stationary device or a mobile device. Further, the detector may be a stand-alone device or form part of another device such as a computer, vehicle or other device. Additionally, the detector may be a handheld device. Other embodiments of detectors are also possible.</p><p>As used herein, the term "position" generally refers to any item of information regarding the placement and/or orientation of an object in space. For this purpose, as an example, one or more coordinate systems may be used, and the position of an object may be determined using one, two, three or more coordinates. As an example, one or more Cartesian and/or other types of coordinate systems may be used. As an example, the coordinate system may be the coordinate system of the detector at a given position and/or orientation that the detector has. As outlined in more detail below, the detector may have an optical axis that may constitute the detector's primary viewing direction. The optical axis can form an axis in a coordinate system, such as the z-axis. Furthermore, one or more additional axes may be provided, preferably perpendicular to the z-axis.</p><p>Thus, by way of example, the detector may constitute a coordinate system in which the optical axis forms the z-axis and in addition the x- and y-axes are provided which are perpendicular to the z-axis and perpendicular to each other. . By way of example, detectors and/or parts of detectors may be located at particular points in this coordinate system, such as the origin of this coordinate system. In this coordinate system, the direction parallel or anti-parallel to the z-axis can be considered the longitudinal direction, and the coordinates along the z-axis can be considered the longitudinal coordinates. Any direction perpendicular to the vertical direction can be considered a horizontal direction, and the x and/or y coordinates can be considered horizontal coordinates.</p><p>Alternatively, other types of coordinate systems may be used. Thus, as an example, a polar coordinate system can be used in which the optical axis forms the z-axis and the distance from the z-axis and the polar angle can be used as additional coordinates. Similarly, directions parallel or anti-parallel to the z-axis can be considered longitudinal, and coordinates along the z-axis can be considered longitudinal coordinates. Any direction perpendicular to the z-axis can be considered a lateral direction, and polar coordinates and/or polar angles can be considered lateral coordinates.</p><p>The detector may be adapted in any feasible way to provide at least one item of information, in particular relating to the position of at least one object. Information may thus be provided in the form of, for example, electronically, visually, acoustically, or any combination thereof. The information may further be stored in the detector's data storage or a separate device, and/or provided via at least one interface, such as a wireless interface and/or a wired interface.</p><p>In particularly preferred embodiments, the detector may be or include a longitudinal photosensor. As used herein, a "longitudinal photosensor" is generally a device designed to produce at least one longitudinal sensor signal in a manner dependent on illumination of a sensor area by a light beam. , where the longitudinal sensor signal depends on the beam cross-section of the light beam in the sensor area for the same total power of illumination, due to the so-called "FiP effect". A longitudinal sensor signal is generally any signal indicative of longitudinal position, which may also be denoted as depth. By way of example, longitudinal sensor signals may be or include digital and/or analog signals. By way of example, longitudinal sensor signals may be or include voltage and/or current signals. Additionally or alternatively, the longitudinal sensor signal may be or include digital data. A longitudinal sensor signal may include a single signal value and/or a series of signal values. A longitudinal sensor signal may further include any signal derived by combining two or more individual signals, for example by averaging two or more signals and/or by forming a quotient of two or more signals. Reference can be made to WO2012/110924A1 and WO2014/097181A1 for potential embodiments of longitudinal photosensors and longitudinal sensor signals.</p><p>Furthermore, the sensor area of the longitudinal photosensor can be illuminated by at least one light beam. For the same total power of illumination, the conductivity of the sensor area therefore depends on the beam cross section of the light beam in the sensor area, which is the "spot" generated by the incident beam in the sensor area. size. Thus, the observable property that the electrical conductivity of a photoconductive material depends on the extent of illumination by an incident light beam in a sensor area containing the photoconductive material is, among other things, a spot containing the same total power but produced. A situation is achieved in which two light beams of different size provide different values for the electrical conductivity of the photoconductive material within the sensor area and are consequently distinguishable with respect to each other.</p><p>Furthermore, since the longitudinal sensor signal is determined by the application of an electrical signal, such as a voltage signal and/or a current signal, the conductivity of the material traversed by the electrical signal is therefore taken into account in determining the longitudinal sensor signal. can be put in Additionally, a load resistor employed in series with the bias voltage source and the longitudinal photosensor is preferably used here. As a result, therefore, the longitudinal light sensor is in principle a recording of the longitudinal sensor signal, e.g. by comparing at least two longitudinal sensor signals with at least one item of information relating to the beam cross-section, in particular the beam diameter. can determine the beam cross-section of the light beam within the sensor area. Furthermore, the beam cross-section of a light beam within the sensor area is determined by the longitudinal position of the object emitting or reflecting the light beam impinging on the sensor area or It is depth dependent and therefore longitudinal photosensors can be applied to determine the longitudinal position of each object.</p><p>As is known from WO2012/110924A1, the longitudinal light sensor is designed to generate at least one longitudinal sensor signal in a manner dependent on the illumination of the sensor area, where the sensor signal is determined by the total output of the illumination. If they are the same, it depends on the beam cross-section of the illumination on the sensor area. As an example, measurements of the photocurrent I are provided as a function of the position of a lens, which is configured to focus electromagnetic radiation onto the sensor area of the longitudinal photosensor. During measurement, the lens is displaced relative to the longitudinal photosensor in a direction perpendicular to the sensor area, resulting in a change in the diameter of the light spot on the sensor area. In the particular example where this photovoltaic device, in particular the dye solar cell, is employed as the material in the sensor region, the signal of the longitudinal photosensor, in this case the photocurrent, is outside the maximum at the focus of the lens, the photovoltaic It obviously depends on the illumination geometry so that the current drops to less than 10% of its maximum value.</p><p>As outlined above, the signal of the at least one longitudinal sensor is, due to the FiP effect, the beam cross-section of the light beam in the sensor area of the at least one longitudinal light sensor, given the same total power of illumination by the light beam. depends on As used herein, the term "beam cross-section" generally refers to the lateral extent of a light beam or a light spot produced by a light beam at a particular location. If a circular light spot is generated, the radius, diameter, or Gaussian beam waist or double the Gaussian beam waist can serve as a measure of beam cross-sectional area. If a non-circular light spot is generated, another feasible method is to determine the cross-sectional area, e.g. by determining the cross-sectional area of a circle with the same area as the non-circular light spot, also called the equivalent beam cross-section. be able to. In this regard, under conditions where a corresponding material, such as a photovoltaic material, can be illuminated with a minimal cross section by a light beam, for example when the material is located at or near the focal point affected by the light lens, Observations of values, maxima or minima, in particular maxima or minima, of the longitudinal sensor signal can be employed. If the extreme value is the maximum, the observation is indicated as a positive FiP effect, while if the extreme value is the minimum, the observation is indicated as a negative FiP effect.</p><p>Therefore, a light beam having a first beam diameter or beam cross-section will have the same total power for illumination of the sensor area by the light beam, regardless of the photosensitive material actually contained in the sensor area. A light beam having a second beam diameter or beam cross-section different from the first beam diameter or beam cross-section may produce a directional sensor signal while a second longitudinal sensor signal different from the first longitudinal sensor signal is used. Generate a direction sensor signal. Thus, by comparing the longitudinal sensor signals, at least one item of information regarding the beam cross-section, in particular the beam diameter, can be generated. For details of this effect, reference can be made to WO2012/110924A1. Therefore, the longitudinal sensor signal generated by the longitudinal photosensor is used to obtain information about the total power and/or the total intensity of the light beam and/or the longitudinal sensor signal with respect to the total power and/or the total intensity of the light beam. A comparison may be made to normalize the orientation sensor signal and/or at least one item of information relating to the longitudinal position of the object. Thus, as an example, the maximum value of the longitudinal photosensor signal may be detected, and all longitudinal photosensor signals may be divided by this maximum value to produce a normalized longitudinal photosensor signal, and This signal can be converted into at least one item of longitudinal information of the object by using the known relationships described above. Other normalization methods are also applicable, such as normalization using the average value of the longitudinal sensor signals and dividing all longitudinal sensor signals by the average value. Other options are also possible. Each of these options may be suitable to provide a transformation independent of the total power and/or intensity of the light beam. Furthermore, information regarding the total power and/or intensity of the light beam can be generated in this way.</p><p>In particular, if one or more beam characteristics of the light beam propagating from the object to the detector are known, at least one item of information about the longitudinal position of the object is derived from at least one longitudinal sensor signal and the longitudinal direction of the object. can thus be derived from known relationships between positions. Known relationships can be stored in the evaluator as algorithms and/or as one or more calibration curves. As an example, especially for Gaussian beams, the relationship between beam diameter or beam waist and object position can be easily derived by using the Gaussian relationship between beam waist and ordinate.</p><p>This embodiment can in particular be used by the evaluator to resolve ambiguities in the known relationship between the beam cross section of the light beam and the longitudinal position of the object. Thus, even if the beam properties of the light beam propagating from the object to the detector are fully or partially known, for many beams the beam cross section narrows before reaching the focal point and then widens again. is known. In other words, before and after the focal point where the beam cross-sectional area of the light beam is the narrowest, positions where the light beam has the same cross-sectional area appear along the propagation axis of the light beam. Thus, as an example, the cross-sectional area of the light beam is the same at the distance z0 before and after the focal point. Therefore, if only one longitudinal photosensor with a specific spectral sensitivity is used, the specific cross-sectional area of the light beam can be determined if the total power or intensity of the light beam is known. Using this information, the distance z0 of each longitudinal photosensor from the focal point can be determined. However, to determine whether each longitudinal photosensor is positioned before or after the focal point, the history of object and/or detector movement and/or whether the detector is positioned before or after the focal point. Additional information is required, such as information about whether In common situations, this additional information may not be provided. Therefore, additional information may be obtained to resolve the above ambiguity. Therefore, the evaluation device evaluates the longitudinal sensor signal so that the beam cross-section of the light beam on the first longitudinal photosensor is greater than the beam cross-section of the light beam on the second longitudinal photosensor, where recognizes that the second longitudinal photosensor is positioned behind the first longitudinal photosensor, the evaluation device detects that the light beam is still narrowed and the position of the first longitudinal photosensor is located in front of the focal point of the light beam. Conversely, if the beam cross-section of the light beam on the first longitudinal photosensor is smaller than the beam cross-section of the light beam on the second longitudinal photosensor, the evaluation device determines that the light beam is diverging and It may be determined that the location of the second longitudinal photosensor is located behind the focal point. Thus, in general, the evaluation device may be adapted to recognize whether the light beam is broadened or narrowed by comparing longitudinal sensor signals of different longitudinal sensors.</p><p>For further details regarding the determination of said at least one item of information relating to the longitudinal position of the object employing the evaluation device according to the invention reference can be made to the description of WO2014/097181A1. In general, therefore, the evaluation device preferably determines from the known dependence of the beam diameter of the light beam on at least one propagation coordinate in the direction of propagation of the light beam and/or from the known Gaussian profile of the light beam, the It may be adapted to compare the beam cross-section of the light beam and/or the diameter of the light beam with known beam properties of the light beam to determine at least one item of information about the longitudinal position.</p><p>Alternatively or additionally, at least one lateral coordinate of the object may be determined. Generally, therefore, the evaluation device is at least one lateral light sensor, which can be a pixellated, segmented or large area lateral light sensor, as further outlined in WO2014/097181A1. It may be further adapted to determine at least one lateral coordinate of the object by determining the position of the light beam above. Accordingly, a detector according to the invention may be or include a lateral photosensor. As used herein, the term "lateral photosensor" generally refers to a device adapted to determine the lateral position of at least one light beam traveling from an object to a detector. Regarding the term "position", reference can be made to the definitions given above. Thus, preferably the lateral position is or can comprise at least one coordinate in at least one dimension perpendicular to the optical axis of the detector. By way of example, the lateral position may be the position of the light spot produced by the light beam in a plane perpendicular to the optical axis, for example on the photosensor surface of a lateral photosensor. By way of example, in-plane positions may be given in Cartesian and/or polar coordinates. Other embodiments are also possible. In this embodiment, it may be particularly advantageous to minimize the distance to the reflective layer and the roughness of the reflective layer. In the preferred embodiment disclosed in WO2014/097181A1, the sensor layer of the lateral photosensor may be a photodetector. In a further preferred embodiment disclosed in WO2016/120392A1, the sensor layer of the lateral photosensor can comprise a layer of photoconductive material, selected in particular from the materials described in more detail above.</p><p>A lateral photosensor may provide at least one lateral sensor signal. Here, the lateral sensor signal may generally be any signal indicative of lateral position. As an example, the lateral sensor signal may be or include a digital signal and/or an analog signal. As an example, the lateral sensor signals may be or include voltage and/or current signals. Additionally or alternatively, the lateral sensor signal may be or include digital data. A lateral sensor signal may include a single signal value and/or a series of signal values. The lateral sensor signal may further be derived by combining two or more individual signals, such as by averaging the two or more signals and/or by forming the quotient of the two or more signals. It can contain any signal.</p><p>Here, there may be at least two electrodes for recording transverse light signals. In a preferred embodiment, said at least two electrodes may actually be arranged in the form of at least two physical electrodes, preferably exhibiting a T-shaped configuration, each physical electrode comprising an electrically conductive material. In this embodiment, at least one of the electrodes of the lateral photosensor may preferably be a split electrode having at least two partial electrodes, the lateral photosensor having a sensor area and at least one The lateral sensor signal may indicate the x-position and/or y-position of the incident light beam within the sensor area. The sensor area can be the surface of the photodetector that faces toward the object. The sensor area may preferably be oriented perpendicular to the optical axis. The lateral sensor signal can thus indicate the position of the light spot in the plane of the sensor area of the lateral photosensor produced by the light beam. Generally, as used herein, the term "partial electrode" preferably refers to a plurality of electrodes adapted to measure at least one current and/or voltage signal independently of other partial electrodes. refers to one electrode of Thus, if multiple partial electrodes are provided, each electrode is adapted to supply multiple potentials and/or currents and/or voltages that can be measured and/or used independently between at least two partial electrodes. be done.</p><p>The lateral photosensor may further be adapted to generate a lateral sensor signal according to the current through the partial electrodes. Thus, the ratio of the currents through the two horizontal sub-electrodes can be formed, thereby generating the x-coordinate, and/or the ratio of the currents through the vertical sub-electrodes can be formed, thereby generating the y-coordinate. A detector, preferably a lateral light sensor and/or an evaluation device, can be configured to derive information about the lateral position of the object from at least one current ratio through said partial electrodes. Other methods of generating position coordinates by comparison of currents through partial electrodes are also feasible.</p><p>Partial electrodes can generally be defined in various ways to determine the position of the light beam within the sensor area. Thus, more than one horizontal sub-electrode may be provided for determining the horizontal or x-coordinate, and more than one vertical sub-electrode may be provided for determining the vertical or y-coordinate. Partial electrodes may thus be provided at the perimeter of the sensor area, where the interior space of the sensor area remains free and may be covered by one or more additional electrode materials. Here, the additional electrode material may preferably be a transparent additional electrode material, such as a transparent metal and/or a transparent conductive oxide and/or most preferably a transparent conductive polymer.</p><p>By using a lateral light sensor in which one of the electrodes is a split electrode with three or more partial electrodes, the current through said partial electrodes can depend on the position of the light beam within the sensor area. This can generally be attributed to the fact that ohmic or resistive losses can occur en route from the point of charge generation due to light impinging on the partial electrode. Thus, in addition to the partial electrodes, the segmented electrodes may comprise one or more additional electrode materials connected to the partial electrodes, said one or more additional electrode materials providing electrical resistance. Therefore, due to ohmic losses on the path from the location of charge generation through one or more additional electrode materials to the partial electrodes, the current through the partial electrodes is dependent on the location of charge generation and thus the sensor area depends on the position of the light beam within the Further details of this principle for determining the position of the light beam within the sensor area can be found in the preferred embodiments below and/or the physical methods disclosed in WO2014/097181A1, WO2016/120392A1 and individual references therein. Principles and equipment options can be referenced.</p><p>Further embodiments of the invention referred to the properties of the light beam propagating from the object to the detector. As used herein, the term "light" generally refers to electromagnetic radiation in one or more of the visible, ultraviolet, and infrared spectral ranges. Therein, in accordance in part with the version of the ISO-21348 standard in effect on the date of this application, the term visible spectral range generally refers to the spectral range from 380 nm to 760 nm. The term infrared (IR) spectral range generally refers to electromagnetic radiation in the range 760 nm to 1000 μm, the range 760 nm to 1.4 μm is commonly referred to as the near-infrared (NIR) spectral range, and the range 1.5 μm to 15 μm is Denoted as mid-infrared (MIR), the range from 15 μm to 1000 μm is referred to as the far infrared (FIR) spectral range. The term ultraviolet spectral range generally refers to electromagnetic radiation in the range 1 nm to 380 nm, preferably 100 nm to 380 nm. Preferably, the light used within the scope of the present invention is visible light, i.e. light within the visible spectral range.</p><p>The term "light beam" generally refers to an amount of light emitted in a particular direction. Therefore, the light beam can be a bundle of rays having a predetermined spread in the direction perpendicular to the direction of propagation of the light beam. Preferably, the light beam is or may comprise one or more Gaussian light beams, said Gaussian light beams measuring one or more Gaussian beam parameters, e.g. beam diameter in space and/or or by one or more beam waists, Rayleigh lengths or any other beam parameter or combination of beam parameters suitable for characterizing the evolution of beam propagation.</p><p>The light beam can be emitted by, or originate from, the object itself. Additionally or alternatively, other sources of light beams are also feasible. Thus, as outlined in more detail below, the object is illuminated 1 by using one or more primary rays or beams, e.g. one or more primary rays or beams having predetermined characteristics. One or more illumination sources may be provided. In the latter case, the light beam propagating from the object to the detector may be the light beam reflected by the object and/or a reflector connected to the object.</p><p>Furthermore, the detector may have at least one modulation device, in particular a periodic beam breaker, for modulation, in particular periodic modulation, of the radiation. Modulation of the irradiation should be understood to mean the process of varying the total power of the irradiation, preferably periodically, in particular at one or more modulation frequencies. In particular, a periodic modulation can be enabled between maximum and minimum values of the total power of illumination. The minimum value may be 0, but the minimum value may be greater than 0, as for example when full modulation need not be enabled. Modulation may be activated, for example, in the beam path between the object and the sensor layer, for example by at least one modulator arranged in said beam path. Alternatively or additionally, however, in the beam path between any of the illumination sources described in more detail below for illuminating the object and the object, for example at least one Modulation may be enabled by the modulator. Combinations of these possibilities are also conceivable. The at least one modulator device comprises, for example, a beam chopper or other kind of periodic beam interrupter, for example at least one interrupter, preferably rotating at a constant speed and thus capable of periodically interrupting the irradiation. May include blades or shut-off wheels. Alternatively or additionally, however, it is also possible to use one or more different types of modulators, for example modulators based on electro-optical and/or acousto-optical effects. Also alternatively or additionally, e.g. by the illumination source itself having a modulated intensity and/or a total power, e.g. Any at least one illumination source itself can also be designed to produce modulated illumination by being integrated. Thus, by way of example, at least one modulator may be fully or partially integrated in the illumination source. Various possibilities are conceivable.</p><p>The detector can thus be designed to detect at least two longitudinal sensor signals with different modulations, in particular with different modulation frequencies of the at least two longitudinal sensor signals. The evaluation device can be designed to generate geometric information from at least two longitudinal sensor signals. As described in WO2012/110924A1 and WO2014/097181A1, it is possible to disambiguate and/or take into account the fact that eg the total power of illumination is generally unknown. By way of example, the detector may be designed to provide modulation of the illumination of the object and/or at least one sensor area of the detector at a frequency of 0.05 Hz to 1 MHz, such as 0.1 Hz to 10 kHz. As outlined above, for this purpose the detector may comprise at least one optional modulation device integrated in and/or independent of at least one optional irradiation source. Thus, for example at least one chopper and/or at least one device with modulated transmission, for example at least one electro-optical device and/or at least one acousto-optical device, which itself generates an illumination modulation There may be at least one illumination source and/or at least one independent modulator adapted to.</p><p>According to the invention, it can be advantageous, as mentioned above, to apply at least one modulation frequency to the photodetector. However, it is still possible to directly determine the longitudinal sensor signal without applying the modulation frequency to the photodetector. As will be shown in more detail below, application of a modulation frequency may not be necessary under many relevant circumstances for obtaining desired longitudinal information about an object. As a result, therefore, the detector may not be required to include a modulator, which may further contribute to the simple and cost-effective construction of spatial detectors. As a further result, spatial light modulators can be used in time multiplexed mode rather than frequency multiplexed mode, or a combination thereof.</p><p>In a further aspect of the invention, a human-machine interface is proposed for exchanging at least one item of information between a user and a machine. The proposed human-machine interface, in one or more of the embodiments described above or in more detail below, can be performed by one or more users for the detector to provide information and/or instructions to the machine. can take advantage of the fact that it can be used Thus, preferably a human-machine interface can be used for inputting control commands.</p><p>The human-machine interface comprises at least one detector according to the invention, such as according to one or more embodiments disclosed above and/or one or more embodiments disclosed in more detail below, wherein said human-machine interface is designed to generate at least one item of geometric information of a user by means of a detector, said human-machine interface converting said geometric information into at least one information item, in particular at least one designed to be assigned to one control instruction.</p><p>In a further aspect of the invention, an entertainment device for performing at least one entertainment function is disclosed. As used herein, an entertainment device is a device that can serve the leisure and/or entertainment purposes of one or more users, hereinafter also referred to as one or more players. As an example, an entertainment device may serve the purpose of games, preferably computer games. Additionally or alternatively, the entertainment device may also be used for other purposes, such as exercise, sports, physical therapy or general exercise tracking. As such, an entertainment device may be implemented in a computer, computer network or computer system or may include a computer, computer network or computer system executing one or more gaming software programs.</p><p>The entertainment device comprises at least one human-machine interface according to the invention, such as at least one human-machine interface, such as according to one or more embodiments disclosed above and/or one or more embodiments disclosed below. Contains one human-machine interface. The entertainment device is designed to allow at least one item of information to be entered by the player by means of a human-machine interface. Said at least one item of information may be transmitted to and/or used by the controller and/or computer of the entertainment device.</p><p>A further aspect of the invention provides a tracking device for tracking the position of at least one movable object. As used herein, a tracking system is a device adapted to collect a set of information regarding the past positions of at least one object or at least a portion of an object. Additionally, the tracking system may be adapted to provide information of at least one predicted future position of at least one object or at least a portion of the object. The tracking system may comprise at least one tracking controller, wholly or partly as an electronic device, preferably as at least one data processing device, more preferably as at least one computer or microcontroller. can be embodied. Likewise, the at least one tracking controller may include at least one evaluation device and/or may be part of said at least one evaluation device and/or fully or partially evaluate said at least one evaluation device. It may be the same as the device.</p><p>The tracking system comprises at least one detector according to the invention, e.g. as disclosed in one or more embodiments listed above and/or disclosed in one or more embodiments below including at least one detector such as The tracking system further comprises at least one tracking controller. The tracking system may have one, two or more detectors, in particular two or more identical detectors, for at least one object in an overlapping space between said two or more detectors. Allows obtaining reliable depth information. The tracking controller is adapted to track a series of positions of the object, each position containing at least one item of information regarding the position of the object at a particular point in time.</p><p>The tracking system may further include at least one beacon device connectable to the object. Reference can be made to WO2014/097181A1 for a potentially possible definition of a beacon device. The tracking system preferably generates information about the location of objects such that the detectors can generate information about the location of objects of at least one beacon device, in particular including particular beacon devices exhibiting particular spectral sensitivities. is adapted to Thus, multiple beacons exhibiting different spectral sensitivities can be tracked, preferably simultaneously, by the detector of the present invention. In the present invention, beacon devices may be fully or partially embodied as active beacon devices and/or passive beacon devices. As an example, the beacon device may include at least one illumination source adapted to generate at least one light beam to be transmitted to the detector. Additionally or alternatively, the beacon device may include at least one reflector adapted to reflect light produced by the illumination source, thereby producing a reflected light beam that is transmitted to the detector. .</p><p>In a further aspect of the invention, a scanning system is provided for determining at least one position of at least one object. As used herein, a scanning system emits at least one light beam that illuminates at least one dot located on at least one surface of at least one object, and at least one dot and the scanning A device adapted to generate at least one item of information relating to distances between systems. For the purpose of generating at least one item of information relating to the distance between said at least one dot and the scanning system, the scanning system uses at least one of the detectors according to the invention, such as one listed above or It includes at least one detector as disclosed in embodiments and/or as disclosed in one or more embodiments below.</p><p>Thus, the scanning system comprises at least one illuminator adapted to emit at least one light beam configured to illuminate at least one dot located on at least one surface of at least one object. Including source. As used herein, the term "dot" refers to a small area present on a portion of the object's surface to be illuminated by the illumination source, which may be selected, for example, by a user of the scanning system. Preferably, the dots are on the one hand so that the scanning system can determine as accurately as possible the value of the distance between the illumination source included in the scanning system and the part on the surface of the object on which the dots can be located. It should be of as small a size as possible and on the other hand large enough to allow the user of the scanning system or the scanning system itself to detect the presence of the dot on the relevant part of the surface of the object, especially by an automatic procedure. can.</p><p>For this purpose, the radiation source can be an artificial radiation source, in particular at least one laser light source and/or at least one incandescent lamp and/or at least one semiconductor light source, such as at least one light emitting diode, in particular organic and/or inorganic. of light emitting diodes. Because of the commonly defined beam profile and other operating characteristics, it is particularly preferred to use at least one laser light source as the illumination source. Here, the use of a single laser source may be preferred, especially where it may be important to provide a compact scanning system that is easy for the user to store and transport. The illumination source is therefore preferably a component of the detector and can therefore be integrated in the detector, in particular, for example integrated in the housing of the detector. In a preferred embodiment, in particular the housing of the scanning system may include at least one display configured to provide distance-related information to the user, for example in an easy-to-read form. In a further preferred embodiment, in particular the scanning system housing may further comprise at least one button that may be configured to operate at least one function associated with the scanning system, such as setting one or more operating modes. In a further preferred embodiment, the housing of the scanning system further comprises a magnetic material or the like for fixing the scanning system to another surface, such as rubber feet, a base plate or a wall holder, particularly for distance measurement accuracy. It may include at least one stationary unit that may be configured for enhanced security and/or operability of the scanning system by a user.</p><p>In a particularly preferred embodiment, the illumination source of the scanning system can thus emit a single laser beam that can be configured to illuminate a single dot located on the surface of the object. Thus, by using at least one of the detectors according to the invention at least one item of information relating to the distance between at least one dot and the scanning system can be generated. Thereby, preferably, the distance between the illumination system included in the scanning system and the single dot produced by the illumination source can be determined, such as by employing an evaluation device included in at least one detector. . However, the scanning system may also include additional evaluation systems that may be specifically adapted for this purpose. Additionally or alternatively, the size of the scanning system, and in particular the size of the housing of the scanning system, may be taken into consideration, such that a particular point on the housing, such as the leading edge or trailing edge of the scanning system housing, and a single dot. can be selectively determined.</p><p>Alternatively, the illumination source of the scanning system can emit two separate laser beams configured to give respective angles, e.g., right angles, between the emission directions of the beams, so that the same object Two separate dots located on the surface of the object or two different surfaces of two separate objects can be illuminated. However, other values for the respective angles between the two separate laser beams are also feasible. This feature can in particular be employed for indirect measurement functions, derivation of indirect distances that may not be directly accessible, e.g. due to the presence of one or more obstacles between the scanning system and the dot; or other indirect distance derivation that may be difficult to reach. Thus, by way of example, it may be possible to determine the height value of an object by measuring two separate distances and deriving the height by use of the Pythagorean theorem. In order to be able to maintain a predetermined level, in particular for the object, the scanning system further comprises at least one leveling unit, in particular an integrated bubble vial, which can be used by the user to maintain a predetermined level. and so on.</p><p>As a further alternative, the illumination source of the scanning system comprises a plurality of individual laser beams, e.g. arrays of dots exhibiting individual pitches relative to each other, in particular regular pitches, and located on at least one surface of at least one object. may emit an array of laser beams arranged to produce a For this purpose, specially adapted optical elements, such as beam splitters and mirrors, may be provided which may allow the generation of an array of said laser beams.</p><p>A scanning system may thus provide a static placement of one or more dots disposed on one or more surfaces of one or more objects. Alternatively, the illumination source of the scanning system, particularly one or more laser beams such as the array of laser beams described above, may exhibit varying intensity over time and/or alternate direction of emission over time. It can be configured to provide one or more beams of light. Thus, the illumination source illuminates a portion of at least one surface of at least one object by using one or more light beams having alternating characteristics generated by at least one illumination source of the scanning device. It can be configured to scan as one image. In particular, the scanning system may thus use at least one column scan and/or row scan, for example to scan one or more surfaces of one or more objects either serially or simultaneously. Thus, the scanning system can be adapted to measure angles by measuring three or more dots, or the scanning system can measure corners or narrow corners such as roof gables that are rarely accessible using conventional scales. It can be configured to measure area.</p><p>As a non-limiting example, the scanning system can be mounted on a tripod and aimed at an object or area with several corners and surfaces. One or more freely moveable laser sources are attached to the scanning system. The one or more laser light sources are moved such that they illuminate a point of interest. The position of the illumination point relative to the scanning system is measured upon pressing a designated button on the scanning system and the position information is transmitted to the mobile phone via the wireless interface. Location information is stored in the mobile phone application. The laser light source is moved to illuminate additional points of interest and the positions of the points of interest are measured and transmitted to the mobile phone application. A mobile phone application can transform a set of points into a three-dimensional model by connecting adjacent points with a plane. The 3D model may be saved and further processed. Distances and/or angles between measured points or surfaces may be displayed directly on a display attached to the scanning system or on a mobile phone to which position information is transmitted.</p><p>As a non-limiting example, a scanning system may include two or more freely movable laser sources for projecting points, and one movable laser source for projecting lines. The line may be used to place two or more laser spots along a line, and the display of the scanning device may indicate two or more laser spots that may be placed along said line, such as equidistant. You can display the distance between For two laser spots, a single laser source can be used, the distance of the projected points is modified using one or more beam splitters or prisms, and the beam splitters or prisms are the projected It can be moved such that the laser spots move away from each other or move towards each other. Additionally, the scanning system may be adapted to project additional patterns such as right angles, circles, squares, triangles, etc., along which measurements can be made by projecting laser spots and measuring their positions. .</p><p>By way of non-limiting example, the scanning system can be adapted to assist in working with tools such as saws, drills and other wood or metal working tools. The scanning system can thus be adapted to measure two oppositely oriented distances and display the two measured distances or the sum of the distances on the display. In addition, the scanning system is such that when the scanning system is placed on a surface, the laser point automatically moves away from the scanning system along the surface such that corners or edges of the surface cause sudden changes in distance measurements. It may be adapted to measure the distance to the edge of the surface, moving apart until indicated. This makes it possible to measure the distance to the edge of a wooden plank when the scanning device is placed on it away from the edge. Additionally, the scanning system can measure the distance to the edge of the plank in one direction and project a line or circle or point at a specified distance in the opposite direction. The scanning system may be adapted to project lines or circles or points at predetermined distances according to distances measured in opposite directions, for example according to a predetermined total distance. This allows tools such as saws and drills to be used in the projection position while the scanning system is positioned at a safe distance from the tool, while at the same time processing with the tool at a given distance to the edge of the plank. can be executed. Further, the scanning system may be adapted to project points, lines, etc. at predetermined distances in two opposite directions. If the sum of the distances is changed, only one of the projection distances is changed.</p><p>By way of non-limiting example, the scanning system can be placed, for example, on the surface being worked on, such as cutting, sawing, drilling, etc., and can scan the line at a predetermined distance that can be adjusted, such as by means of a button on the scanning device. can be adapted to project onto the surface.</p><p>In a further aspect of the invention there is provided a stereoscopic system for generating at least one single circular, three-dimensional image of at least one object. As used herein, the stereoscopic system disclosed above and/or below may comprise at least two FiP sensors as longitudinal light sensors, the first FiP sensor being the tracking system, particularly the present invention. It may be included in the tracking system according to the invention, while the second FiP sensor may be included in the scanning system, in particular the scanning system according to the invention. Here, the FiP sensors are arranged in separate beam paths, preferably in a parallel arrangement, e.g. aligning the FiP sensors parallel to the optical axis and displacing them individually perpendicular to the optical axis of the stereoscopic system. You can place it like this: Therefore, the FiP sensor can, in particular, obtain depth information by combining visual information derived from separate FiP sensors that have overlapping fields of view and are preferably sensitive to separate modulation frequencies. Awareness can be generated or increased. For this purpose, the individual FiP sensors may preferably be separated from each other by a distance of 1 cm to 100 cm, preferably 10 cm to 25 cm, determined in a direction perpendicular to the optical axis. In this preferred embodiment, the tracking system is thus used to determine the position of the modulated active target, while one or more on one or more surfaces of one or more objects. dots are used to generate at least one item of information relating to the distance between the at least one dot and the scanning system. Additionally, the stereoscopic system further includes a separate position sensing device adapted to generate an item of information regarding the lateral position of at least one object within the image, as described elsewhere in this application. may include</p><p>In addition to enabling stereoscopic viewing, further particular advantages of stereoscopic systems based primarily on the use of multiple longitudinal photosensors include, inter alia, increased total intensity and/or lower detection thresholds. Moreover, in a conventional stereoscopic system that includes at least two conventional position-sensing devices, the corresponding pixels of each image must be determined by applying a considerable amount of computation, while including at least two FiP sensors. In the stereoscopic system according to the invention, by using FiP sensors, the corresponding pixels of each image are recorded, each of which can operate at different modulation frequencies and can be clearly assigned to each other. . It is thus emphasized that the stereoscopic system according to the invention is able to generate at least one item of information regarding the longitudinal position of the object, as well as at least one item of information regarding the lateral position of the object, with a low computational load. can be</p><p>For further details of the stereoscopic system, reference can be made to the description of the tracking system and the scanning system, respectively.</p><p>In a further aspect of the invention, a camera for imaging at least one object is disclosed. The camera includes at least one detector of the present invention as disclosed in one or more embodiments detailed above or given in greater detail below. Thus, the detector may be part of a photographic device, in particular a digital camera. In particular, the detector can be used in 3D photography, in particular digital 3D photography. The detector thus forms a digital 3D camera or may be part of a digital 3D camera. As used herein, the term "photography" generally refers to techniques for obtaining image information of at least one object. As used further herein, "camera" generally refers to a device configured to perform photography. As used further herein, the term "digital photography" generally refers to the use of a plurality of photosensitive elements adapted to produce an electrical signal indicative of the intensity of illumination, preferably a digital electrical signal. refers to a technique for acquiring image information of at least one object. As used further herein, the term "3D photography" generally refers to techniques for obtaining image information of at least one object in three-dimensional space. A 3D camera therefore refers to a device adapted to perform 3D photography. A camera may generally be adapted to acquire a single image, such as a single 3D image, or may be adapted to acquire multiple images, such as a series of images. Accordingly, the camera may be a video camera adapted for video applications such as for capturing digital video sequences.</p><p>Generally, the invention therefore also refers to a camera, particularly a digital camera, more particularly a 3D camera or a digital 3D camera, for imaging at least one object. As outlined above, the term "imaging" as used herein generally refers to obtaining image information of at least one object. The camera includes at least one detector according to the invention. The camera, as outlined above, may be adapted to acquire a single image or multiple images, such as an image sequence, preferably a digital video sequence. Thus, by way of example, the camera may be or include a video camera. In the latter case, the camera preferably includes a data memory for storing image sequences.</p><p>In a further aspect of the invention, a method of manufacturing a photodetector for optical detection of an incident light beam is disclosed. The method preferably uses at least one detector according to the present invention, such as at least one of the one or more embodiments disclosed elsewhere in this document, which are described in more detail below. used to produce or manufacture Therefore, for any embodiment of the method, reference may be made to the description of various embodiments of the detector.</p><p>The method includes the following steps, which can be performed in a given order or in a different order. Furthermore, additional method steps not described may be provided. Unless otherwise stated, two or more, or even all, of the method steps may be performed at least partially concurrently. Moreover, two or more or even all of the method steps may be repeatedly performed two or more times.</p><p>A method of manufacturing a photodetector according to the present invention comprises the steps of: a) depositing on a partition of a circuit carrier a reflective layer designed to at least partially reflect an incident light beam; b. ) by depositing a photosensitive material on an at least partially transparent substrate layer, designed to generate at least one sensor signal in a manner dependent on illumination of the sensor layer by an incident light beam and a reflected light beam; c) disposing a substrate layer carrying said sensor layer on said reflective layer; and d) receiving a sensor signal and generating at least one information by evaluating the sensor signal. The step of providing an evaluation device designed to generate items.</p><p>Therefore, according to step a), a reflective layer can first be deposited on the partition of the circuit carrier, in particular on the printed circuit board (PCB). Independently, the sensor layer is produced according to step b) by depositing a photosensitive material on the at least partially transparent substrate layer. Subsequently, the substrate layer carrying the sensor layer can be placed on the reflective layer, preferably by applying an adhesive layer, according to step c), so that the reflective layer is capable of reflecting an incident light beam. In particular, it can be placed in a desired position so that it can be returned to the sensor layer. As a result, loss of the incident light beam can be reduced by redirecting the incident light beam to the sensor layer for favorable absorption of the incident light. At least two separate electrical contacts are then provided for contacting the sensor layer, the electrical contacts being designed to transmit the sensor signals via the circuit carrier to the evaluation device. Thus, at least two separate electrical contacts for providing an electrical connection between the sensor layer and the evaluation device may be applied, the electrical connections preferably comprising individual electrical connections and corresponding receiving contacts, e.g. Preferably, it is obtained by applying wire bonds between contact pads or the like which may further be arranged on a circuit carrier such as a PCB.</p><p>In particularly preferred embodiments, the sensor layer may be directly or indirectly attached to the substrate layer, preferably such that no gaps remain or create gaps between the substrate layer and the sensor layer. To this end, the sensor layer may be deposited using deposition methods, including vacuum deposition, sputtering, atomic layer deposition, chemical vapor deposition, spray pyrolysis, electrodeposition, anodization, electrical conversion, non-synthesis. Electrolytic immersion growth, continuous ion adsorption and reaction, molecular beam epitaxy, molecular vapor phase epitaxy, liquid phase epitaxy, inkjet printing, gravure printing, flexographic printing, screen printing, stencil printing, slot die coating, doctor blade and solution-gas interface techniques can be selected from the group consisting of</p><p>In certain embodiments, an adhesive layer can also be disposed between the substrate layer and the reflective layer. For further details of the adhesive layer, reference can be made to the adhesive layer description provided herein.</p><p>As noted above, the desired detector is generally designed to produce at least one sensor signal in response to illumination of the sensor layer by an incident light beam. For this purpose, at least two electrical contacts adapted to electrically contact the sensor layer may additionally be provided. In general, the electrical contact can be provided before or during any one of method steps a) to c). In particularly preferred embodiments, electrical contacts may be provided by using vapor deposited metal layers such as by known vapor deposition techniques, said metal layers being particularly silver, aluminum, platinum, magnesium, chromium, titanium, gold, or It can include one or more of highly conductive graphene. Alternatively, electrical contacts can be provided by galvanic or chemical deposition processes such as electroless Ni, electroless Au, galvanic Ni, or galvanic Au.</p><p>Additionally, a cover layer may be deposited over the sensor layer to completely or partially cover the electrical contacts. In this particular embodiment, the electrical contacts are at least partially, preferably completely, covered by a cover layer and are therefore preferably in the form of wires, in particular of gold (Au), aluminum (Al) or copper (Cu). It can be joined to at least one external connection by using a conductive lead in the form of a wire, which in particular can be joined to the electrical contact through the cover layer. As an example, gold (Au) contacts covered by a cover layer may subsequently be connected by wire bonds.</p><p>As already mentioned above, at least one additional layer may also be deposited on the cover layer or its partitions. wherein the additional layer is at least one of an additional light filter layer, an antireflection layer, an adhesive layer, an encapsulation layer, a scratch resistant layer, a hydrophilic layer, a hydrophobic layer, a self-cleaning layer, an anti-fog layer, or a conductive layer. You can choose to be or be able to include this.</p><p>Further details regarding the photodetector manufacturing process can be found elsewhere in this document.</p><p>The device according to the present invention can be used in surface mount technology packages such as bump chip carriers, ceramic leadless chip carriers, leadless chip carriers, leaded chip carriers, leaded ceramic chip carriers, dual leadless chip carriers, plastic leaded chip carriers, package-on-package. It can be used in combination with a chip carrier or the like. Furthermore, the device according to the invention can be used in standard through-hole or source mount technology semiconductor packages such as DO-204, DO-213, metal electrode leafless surface, DO-214, SMA, SMB, SMC, GF1, SOD, SOT, TSOT. , TO-3, TO-5, TO-8, TO-18, TO-39, TO-46, TO-66, TO-92, TO-99, TO-100, TO-126, TO-220, TO -226, TO-247, TO252, TO-263, TO-263 THIN, SIP, SIPP, DFN, DIP, DIL, Flat Pack, SO, SOIC, SOP, SSOP, TSOP, TSSOP, ZIP, LCC, PLCC, QFN, QFP, QUIP, QUIL, BGA, eWLB, LGA, PGA, COB, COF, COG, CSP, Flip Chip, PoP, QP , UICC, WL-CSP, WLP, MDIP, PDIP, SDIP, CCGA, CGA, CERPACK, CQGP, LLP, LGA, LTCC, MCM, MICRO SMDXT, etc. Furthermore, the device according to the invention can be used in combination with a Pin Grid Array (PGA) such as OPGA, FCPGA, PAC, PGA, CPGA. Further, the device according to the invention is used in combination with flat packages such as CFP, CQFP, BQFP, DFN, ETQFP, PQFN, PQFP, LQFP, QFN, QFP, MQFP, HVQFP, SIDEBRAZE, TQFP, TQFN, VQFP, ODFN. be able to. Furthermore, the device according to the invention can be used for SOP, CSOP It can be used in combination with small outline packages such as MSOP, PSOP, PSON, PSON, QSOP, SOIC, SSOP, TSOP, TSSOP, TVSOP, µMAX and WSON. Furthermore, the device according to the invention can be used in combination with chip scale packages such as CSP, TCSP, TDSP, MICRO SMD, COB, COF, COG. Furthermore, the device according to the invention can be used in combination with ball grid arrays such as FBGA, LBGA, TEPBGA, CBGA, OBGA, TFBGA, PBGA, MAP-BGA, UCSP, μBGA, LFBGA, TBGA, SBGA, UFBGA. . Furthermore, the device according to the invention can be combined with further electronic devices such as chips in multi-chip packages such as SiP, PoP, 3D-SiC, WSI, proximity communication and the like. For further information regarding integrated circuit packing, the following sources may be consulted.</p><p>https://en.wikipedia.org/wiki/List_of_integrated_circuit_packaging_type or https://en.wikipedia.org/wiki/List_of_integrated_circuit_package_dimensions</p><p>In a further aspect of the invention the use of the detector according to the invention is disclosed. Therein, the use of detectors for the purpose of determining the position of an object, in particular the lateral position of an object, is proposed, in particular for the purposes of position determination, especially position determination in traffic technology; recreational applications; security applications. stereoscopic applications; photography applications; imaging applications or camera applications; mapping applications for generating at least one map of space; vehicle homing or tracking beacon detectors; Selected from the group consisting of localization of objects with properties (hotter or cooler than background); machine vision applications; robotic applications.</p><p>Preferably, further potential possible details of photodetectors, methods, human-machine interfaces, entertainment devices, tracking systems, various uses of cameras and detectors, especially with respect to light sensors, evaluation devices and, if applicable, longitudinal light See WO2012/110924A1, US2012/206336A1, WO2014/097181A1, US2014/291480A1, and WO2016/120392A1, all of these for sensors, modulators, illumination sources and imaging devices, in particular potential materials, configurations and further details. The contents are incorporated herein by reference.</p><p>Additionally, devices according to the present invention find use in infrared detection applications, heat detection applications, thermometer applications, heat seeking applications, flame detection applications, fire detection applications, smoke detection applications, temperature sensing applications, spectroscopy applications, photocopying applications, and the like. can do. Furthermore, the device according to the invention can be used in photocopying or xerographic applications. Further, the device according to the present invention finds use in exhaust gas monitoring applications, combustion process monitoring applications, pollution monitoring applications, industrial process monitoring applications, chemical process monitoring applications, food processing process monitoring applications, water quality monitoring applications, air quality monitoring applications, and the like. be able to. Additionally, devices according to the present invention can be used in quality control applications, temperature control applications, motion control applications, emissions control applications, and gas sensing applications.</p><p>The optical sensors and detectors, methods, human-machine interfaces and entertainment devices including at least one of the optical sensors described above and the proposed uses have considerable advantages over the prior art. Thus, in general, a simple but efficient detector for accurately determining the position of at least one object in space, and in particular detecting at least one of the transmittance, absorption, emission and reflectance of at least one object can be provided for doing. Furthermore, the detector according to the invention may be particularly sensitive over at least one partition of the IR spectral range, in particular the MidIR spectral range, i.e. the spectral range from 1.5 μm to 15 μm, thus efficiency To provide a large area position sensing device which is effective and highly reliable.</p><p>Compared to devices known in the art, the detectors proposed herein are preferably able to reduce or avoid the loss of incident light, in particular light from the infrared spectral range, as effectively as possible. , where the photodetector can be manufactured by applying a simple manufacturing process. Here the detector can be easily integrated into the package. Furthermore, the detectors described herein are preferably supplied as non-bulky closed packages and nevertheless are susceptible to degradation by external influences such as humidity and/or oxygen, even at high temperatures and/or humidity. can provide a high degree of protection against the possibility of Additionally, the bondability of the electrical contacts allows easy integration onto a circuit carrier such as a printed circuit board (PCB), even through the non-bulky hermetic packaging of the cover layer and sensor layer. As used herein, the materials used for the detectors are such that the sensor layer can exhibit suitable absorption properties over the desired spectral range, particularly within the partition of the IR spectral range, specifically the MidIR spectral range. may be selected to ensure</p><p>In summary, the following embodiments are considered particularly preferred in the context of the present invention: Embodiment 1: a detector for optical detection of an incident light beam, carrying at least one layer a designed circuit carrier, - a reflective layer arranged in a partition of said circuit carrier, said reflective layer being designed to reflect an incident light beam, thereby generating at least one reflected light beam. , - a substrate layer directly or indirectly adjacent to said reflective layer, said substrate layer being at least partially transparent to the incident and reflected light beams; and - disposed on said substrate layer. a sensor layer designed to generate at least one sensor signal in dependence on illumination of said sensor layer by an incident light beam and a reflected light beam; - evaluating said sensor signal. and an evaluation device designed to generate at least one item of information by.</p><p>Embodiment 2: An embodiment wherein said detector is designed to detect at least one wavelength within at least one partition of a spectral range selected from an ultraviolet spectral range, a visible spectral range, and an infrared spectral range. 1. The detector according to 1.</p><p>Embodiment 3: Detection according to embodiment 2, wherein the detector is designed to detect at least one wavelength in the infrared spectral range, at least one partition of the infrared spectral range ranging from 760 nm to 1000 μm. vessel.</p><p>Embodiment 4: According to embodiment 3, wherein said detector is designed to detect at least one wavelength in the mid-infrared spectral range, at least one partition of the mid-infrared spectral range ranging from 1.5 μm to 15 μm. Detector as described.</p><p>Embodiment 5: The circuit carrier of any one of embodiments 1-4, wherein the circuit carrier mechanically supports the detector, and wherein the circuit carrier is designed to electrically connect the detector. Detector.</p><p>Embodiment 6: A detector according to any one of embodiments 1 to 5, wherein the circuit carrier is or comprises a printed circuit board (PCB), preferably a single-sided PCB.</p><p>Embodiment 7: The printed circuit board is a non-conductive planar substrate on which is laminated at least one sheet of conductive material such that conductive structures can be etched into the sheet. 7. The detector of embodiment 6, wherein the detector is</p><p>Embodiment 8: The detector of any one of embodiments 1 to 7, wherein the reflective layer is arranged on a partition on the surface of the circuit carrier.</p><p>Embodiment 9: The detector of embodiment 8, wherein the reflective layer is arranged on a partition on the surface of the printed circuit board.</p><p>Embodiment 10: Embodiment wherein said reflective layer is designed to reflect an incident light beam such that the incident light beam is reflected back to said sensor layer after being at least partially transmitted through said sensor layer A detector according to any one of 1 to 9.</p><p>Embodiment 11: The detector of any one of embodiments 1-10, wherein the reflective layer is designed to provide diffuse reflection to the incident light beam.</p><p>Embodiment 12: A detector according to any one of embodiments 1 to 11, wherein said reflective layer exhibits a rough surface, preferably said rough surface exhibits an Ra value of at least 0.01 μm.</p><p>Embodiment 13: The method of embodiments 1-12, wherein said reflective layer comprises a metal layer or at least one metallic surface, preferably said reflective layer is at least one of a gold layer, a silver layer or a copper layer. A detector according to any one.</p><p>Embodiment 14: A detector according to any one of embodiments 1 to 13, wherein said reflective layer exhibits a thickness of 10 nm to 100 μm, preferably 20 nm to 10 μm, more preferably 40 nm to 2 μm.</p><p>Embodiment 15: According to any one of embodiments 1 to 14, wherein the substrate layer material is selected from glass, quartz, silicon (Si), transparent conductive oxides (TCO), or transparent organic polymers. detector.</p><p>Embodiment 16: The transparent conductive oxide (TCO) is aluminum oxide (Al₂O₃), titanium oxide (TiO₂), indium tin oxide (ITO), fluorine-doped tin oxide (SnO₂:F; FTO), aluminum-doped zinc oxide (AZO), magnesium oxide (MgO), or perovskite transparent conductive oxide.</p><p>Embodiment 17: A detector according to any one of embodiments 1 to 16, wherein said sensor layer is exactly one continuous sensor layer.</p><p>Embodiment 18: The detector of any one of embodiments 1-17, wherein the sensor layer is directly or indirectly attached to the substrate layer.</p><p>Embodiment 19: The detector of embodiment 18, wherein no gap is left or created between the substrate layer and the sensor layer.</p><p>Embodiment 20: A detector according to embodiment 18 or 19, wherein the sensor layer is applied using a deposition method.</p><p>Embodiment 21: Said deposition method is chemical bath deposition, vacuum evaporation, sputtering, atomic layer deposition, chemical vapor deposition, spray pyrolysis, anodization, electrodeposition, electrical conversion, electroless immersion growth, continuous ion adsorption and reaction , molecular beam epitaxy, molecular vapor phase epitaxy, liquid phase epitaxy, inkjet printing, gravure printing, flexographic printing, screen printing, stencil printing, slot die coating, doctor blade, and solution-gas interface techniques. 21. The detector according to embodiment 20.</p><p>Embodiment 22: The detector of any one of embodiments 1-21, wherein said detector further comprises an adhesive layer disposed between a substrate and said reflective layer.</p><p>Embodiment 23: Any one of Embodiments 1 to 22, wherein the adhesive layer is or comprises an adhesive material, and wherein the adhesive material is designed to assemble the substrate and the reflective layer. detector as described in .</p><p>Embodiment 24: The adhesive layer of embodiments 1-23, wherein the adhesive layer is at least partially transparent to incident and reflected light beams, or at least partially reflective to incident light beams. A detector according to any one.</p><p>Embodiment 25: A detector according to any one of embodiments 1 to 24, wherein the adhesive substance is preferably selected from organic adhesives filled with diffusely reflecting particles or specularly reflecting particles.</p><p>Embodiment 26: Any of embodiments 1 to 25, wherein said sensor layer comprises a photosensitive material selected from the group of dye solar cells, photoconductive materials, and quantum dots, said photoconductive material being particularly preferred Detector according to one.</p><p>Embodiment 27: The detector of any one of Embodiments 1-26, wherein the photoconductive material comprises an inorganic photoconductive material, an organic photoconductive material, or a combination thereof.</p><p>Embodiment 28: The inorganic photoconductive material is selenium, tellurium, selenium-tellurium alloys, metal oxides, Group 4 elements or compounds, Group III-V compounds, Group II-VI compounds, chalcogenides, pnictogenides, halides , and solid solutions and/or doped versions thereof.</p><p>Embodiment 29: The detector of embodiment 28, wherein the chalcogenide is selected from the group comprising sulfide chalcogenides, selenide chalcogenides, telluride chalcogenides, ternary chalcogenides, quaternary or higher chalcogenides.</p><p>Embodiment 30: The sulfide chalcogenides are lead sulfide (PbS), cadmium sulfide (CdS), zinc sulfide (ZnS), mercury sulfide (HgS), silver sulfide (Ag₂S), manganese sulfide (MnS), bismuth trisulfide (Bi₂S.₃), antimony trisulfide (Sb₂S.₃), arsenic trisulfide (As₂S.₃), tin (II) sulfide (SnS), tin (IV) disulfide (SnS₂), indium sulfide (In₂S.₃), copper sulfide (CuS), cobalt sulfide (CoS), nickel sulfide (NiS), molybdenum disulfide (MoS₂), iron disulfide (FeS₂), chromium trisulfide (CrS₃), copper indium sulfide (CIS), copper indium gallium selenide (CIGS), copper zinc tin sulfide (CZTS), and solid solutions and/or doped variants thereof. vessel.</p><p>Embodiment 31: The chalcogenide selenide is lead selenide (PbSe), cadmium selenide (CdSe), zinc selenide (ZnSe), bismuth triselenide (Bi₂Se₃), mercury selenide (HgSe), antimony triselenide (Sb₂Se₃), arsenic triselenide (As₂Se₃), nickel selenide (NiSe), thallium selenide (TlSe), copper selenide (CuSe), molybdenum diselenide (MoSe₂), tin selenide (SnSe), cobalt selenide (CoSe), indium selenide (In₂Se₃), copper zinc tin selenide (CZTSe), and solid solutions and/or doped variants thereof.</p><p>Embodiment 32: The chalcogenide telluride is lead telluride (PbTe), cadmium telluride (CdTe), zinc telluride (ZnTe), mercury telluride (HgTe), bismuth telluride (Bi₂Te₃), arsenic tritelluride (As₂Te₃), antimony tritelluride (Sb₂Te₃), nickel telluride (NiTe), thallium telluride (TlTe), copper telluride (CuTe), molybdenum ditelluride (MoTe₂), tin telluride (SnTe), cobalt telluride (CoTe), silver telluride (Ag₂Te), indium telluride (In₂Te₃), and solid solutions and/or doped versions thereof.</p><p>Embodiment 33: The ternary chalcogenide is mercury cadmium telluride (HgCdTe), mercury zinc telluride (HgZnTe), mercury cadmium sulfide (HgCdS), lead cadmium sulfide (PbCdS), lead mercury sulfide (PbHgS), copper disulfide Indium (CuInS₂), cadmium selenide sulfide (CdSSe), zinc selenide sulfide (ZnSSe), thallium selenide sulfide (TlSSe), cadmium zinc sulfide (CdZnS), cadmium chromium sulfide (CdCr₂S.₄), mercury chromium sulfide (HgCr₂S.₄), copper chromium sulfide (CuCr₂S.₄), cadmium lead selenide (CdPbSe), copper indium diselenide (CuInSe₂), indium gallium arsenide (InGaAs), lead monoxide sulfide (Pb₂OS), lead monoxide selenide (Pb)₂OSe), lead selenide sulfate (PbSSe), arsenic telluride selenide (As₂Se₂Te), indium gallium phosphide (InGaP), gallium arsenide phosphide (GaAsP), aluminum gallium phosphide (AlGaP), cadmium selenite (CdSeO)₃), cadmium zinc telluride (CdZnTe), cadmium zinc selenide (CdZnSe), copper-zinc-tin sulfide-selenium chalcogenide (CZTSSe), and solid solutions and/or doped variants thereof. 33. The detector according to any one of 29-32.</p><p>Embodiment 34: The II-VI compound is cadmium sulfide (CdS), cadmium selenide (CdSe), cadmium telluride (CdTe), zinc sulfide (ZnS), zinc selenide (ZnSe), zinc telluride (ZnTe ), mercury sulfide (HgS), mercury selenide (HgSe), mercury telluride (HgTe), cadmium zinc telluride (CdZnTe), mercury cadmium telluride (HgCdTe), mercury zinc telluride (HgZnTe), mercury zinc selenide (CdZnSe), and solid solutions and/or doped variants thereof.</p><p>Embodiment 35: The III-V compound is indium antimonide (InSb), boron nitride (BN), boron phosphide (BP), boron arsenide (BAs), aluminum nitride (AlN), aluminum phosphide (AlP ), Aluminum arsenide (AlAs), Aluminum antimonide (AlSb), Indium nitride (InN), Indium phosphide (InP), Indium arsenide (InAs), Indium antimonide (InSb), Gallium nitride (GaN), Phosphorus 35. According to any one of embodiments 28-34, selected from the group comprising gallium nitride (GaP), gallium arsenide (GaAs), gallium antimonide (GaSb), and solid solutions and/or doped variants thereof. Detector.</p><p>Embodiment 36: The metal oxide is copper(II) oxide (CuO), copper(I) oxide (CuO₂), nickel oxide (NiO), zinc oxide (ZnO), silver oxide (Ag₂O), manganese oxide (MnO), titanium dioxide (TiO)₂), barium oxide (BaO), lead oxide (PbO), cerium oxide (CeO₂), bismuth oxide (Bi₂O₃), cadmium oxide (CdO), and solid solutions and/or doped variants thereof.</p><p>Embodiment 37: Said Group 4 element or compound is the group comprising doped diamond (C), doped silicon (Si), silicon carbide (SiC), silicon germanium (SiGe), and solid solutions and/or doped variants thereof 37. The detector according to any one of embodiments 28-36, selected from</p><p>Embodiment 38: The detector of any one of embodiments 28-37, wherein the photoconductive material is provided as a colloidal film comprising quantum dots.</p><p>Embodiment 39: The photoconductive material is lead sulfide (PbS), lead selenide (PbSe), lead telluride (PbTe), cadmium telluride (CdTe), indium phosphide (InP), cadmium sulfide (CdS) , cadmium selenide (CdSe), indium antimonide (InSb), mercury cadmium telluride (HgCdTe), copper indium sulfide (CIS), copper indium gallium selenide (CIGS), and copper zinc tin sulfide (CZTS), 39. A detector according to embodiment 38, selected from the group.</p><p>Embodiment 40: A detector according to embodiment 39, wherein said sensor layer exhibits a thickness of 1 nm to 100 μm, preferably 10 nm to 10 μm, more preferably 100 nm to 1 μm.</p><p>Embodiment 41: Embodiment further comprising at least two separate electrical contacts contacting said sensor layer, said electrical contacts being designed to transmit sensor signals to said evaluation device via said circuit carrier Detector according to any one of 1 to 40.</p><p>Embodiment 42: The detector of embodiment 41, wherein wirebonds provide a direct connection between each electrical contact in contact with the sensor layer and a corresponding receiving contact.</p><p>Embodiment 43: The detector according to embodiment 42, wherein said receiving contacts are further arranged on said circuit carrier, preferably on a printed circuit board (PCB).</p><p>Embodiment 44: A detector according to embodiment 42 or 43, wherein the receiving contact is a contact pad.</p><p>Embodiment 45: The detector of any one of embodiments 1-44, further comprising a cover layer deposited over the sensor layer.</p><p>Embodiment 46: A detector according to embodiment 45, wherein the cover layer is an amorphous layer comprising at least one metal-containing compound.</p><p>Embodiment 47: Said at least one said metal-containing compound comprises a metal or metalloid, wherein the metals are Lithium (Li), Beryllium (Be), Sodium (Na), Magnesium (Mg), Aluminum (Al), Potassium (K), Calcium (Ca), Scandium (Sc), Titanium (Ti), Vanadium (V), Chromium (Cr), Manganese (Mn), Iron (Fe), Cobalt (Co), Nickel (Ni), Copper (Cu), Zinc (Zn), Gallium (Ga), Rubidium (Rb), Strontium (Sr), Yttrium (Y), Zirconium (Zr), Niobium (Nb), Molybdenum (Mo), Ruthenium (Ru), Rhodium (Rh), Palladium (Pd), Silver (Ag), Cadmium (Cd), Indium (In), Tin (Sn), Cesium (Cs), Barium (Ba), Lanthanum (La), Cerium (Ce), Praseodymium (Pr), Neodymium (Nd), Promethium (Pm), Samarium (Sm), Europium (Eu), Gadolinium (Gd), Terbium (Tb), Dysprosium (Dy), Holmium (Ho), Erbium (Er), Thulium (Tm), Ytterbium (Yb), Lutetium (Lu), Hafnium (Hf), Tantalum (Ta), Tungsten (W), Rhenium (Re), Osmium (Os), Iridium (Ir), Platinum (Pt), Gold (Au), mercury (Hg), thallium (Tl) and bismuth (Bi), the metalloids being boron (B), germanium (Ge), arsenic (As), antimony (Sb) and tellurium. 47. A detector according to embodiment 46, selected from the group consisting of (Te).</p><p>Embodiment 48: The at least one metal-containing compound is aluminum (Al), titanium (Ti), tantalum (Ta), manganese (Mn), molybdenum (Mo), zirconium (Zr), hafnium (Hf), and tungsten 48. The detector of embodiment 47, comprising a metal selected from the group consisting of (W).</p><p>Embodiment 49: According to any one of embodiments 46-48, wherein the at least one metal-containing compound is selected from the group comprising oxides, hydroxides, chalcogenides, pnictides, carbides, or combinations thereof detector.</p><p>Embodiment 50: The at least one metal-containing compound is at least one oxide, at least one hydroxide, or combinations thereof of aluminum (Al), titanium (Ti), zirconium (Zr) or hafnium (Hf) 50. A detector according to embodiment 49, selected from the group comprising:</p><p>Embodiment 51: According to any one of embodiments 45 to 50, wherein the cover layer has a thickness of 10 nm to 600 nm, preferably 20 nm to 200 nm, more preferably 40 nm to 100 nm, most preferably 50 to 75 nm. detector.</p><p>Embodiment 52: The cover layer is subjected to chemical bath deposition, vacuum deposition, sputtering, atomic layer deposition, chemical vapor deposition, spray pyrolysis, anodization, electrodeposition, electrical conversion, electroless immersion growth, continuous ion adsorption and reaction, molecular beam epitaxy, molecular vapor phase epitaxy, liquid phase epitaxy, inkjet printing, gravure printing, flexographic printing, screen printing, stencil printing, slot die coating, doctor blade, dip coating, and solution-gas interface techniques; 52. The detector according to any one of embodiments 45-51, or including the same.</p><p>Embodiment 53: The cover layer is at least one of a light filter, an antireflective layer, an encapsulating layer, an adhesive layer, a scratch resistant layer, a hydrophilic layer, a hydrophobic layer, a self-cleaning layer, an anti-fog layer, or a conductive layer. 53. The detector according to any one of embodiments 45-52, further comprising one property.</p><p>Embodiment 54: The detector of any one of embodiments 45-53, wherein the cover layer directly contacts the sensor layer.</p><p>Embodiment 55: The detector of embodiment 54, wherein the cover layer completely covers the accessible surface of the sensor layer.</p><p>Embodiment 56: A detector according to embodiment 54 or 55, wherein the cover layer at least partially covers the electrical contacts.</p><p>Embodiment 57: The detector of embodiment 56, wherein the electrical contacts are bondable through the cover layer.</p><p>Embodiment 58: Any one of embodiments 1 to 57, wherein said electrical contacts are preferably bondable by using wire bonds, in particular gold (Au), aluminum (Al) or copper (Cu) wires Detector according to one.</p><p>Embodiment 59: The detector of any one of embodiments 1-58, wherein at least two separate said electrical contacts are provided at different locations on said sensor layer.</p><p>Embodiment 60: At least one electrode wherein said electrical contact is selected from the group consisting of silver (Ag), platinum (Pt), molybdenum (Mo), aluminum (Al), gold (Au), and highly conductive graphene 60. The detector of any one of embodiments 1-59, comprising a material.</p><p>Embodiment 61: A detector according to embodiment 60, wherein a further adhesive layer is provided on said electrical contacts, said further adhesive layer adapted for bonding.</p><p>Embodiment 62: The detector of Embodiment 61, wherein said further adhesion layer comprises at least one of Nickel (Ni), Chromium (Cr), Titanium (Ti), or Palladium (Pd).</p><p>Embodiment 63: Any of embodiments 1-62, wherein the detector is adapted to generate a sensor signal by one or more measurements of the electrical resistance or conductivity of at least a portion of the sensor layer Detector according to one.</p><p>Embodiment 64: Detection according to embodiment 63, wherein the detector is configured to generate the sensor signal by performing at least one current-voltage measurement and/or at least one voltage-current measurement vessel.</p><p>Embodiment 65: The detector of any one of embodiments 1-64, further comprising a bias voltage source.</p><p>Embodiment 66: The detector of embodiment 65, wherein the bias voltage source and load resistor are arranged in series with the sensor layer.</p><p>Embodiment 67: A detector according to embodiment 65 or 66, wherein a bias voltage is applied to the photoconductive material of said sensor layer.</p><p>Embodiment 68: The detector of any one of embodiments 1-67, wherein said detector further comprises at least one modulator for modulating the illumination.</p><p>Embodiment 69: The detector of embodiment 68, wherein the light beam is a modulated light beam.</p><p>Embodiment 70: The detector is designed to detect at least two sensor signals with different modulations, in particular at least two sensor signals with different modulation frequencies, and the evaluation device detects 70. A detector according to embodiment 69, designed to generate at least one item of information about the position of an object by evaluating at least two sensor signals.</p><p>Embodiment 71: A detector according to embodiment 69 or 70, wherein said light sensor is further designed such that said sensor signal depends on the modulation frequency of illumination for the same total power of illumination.</p><p>Embodiment 72: The detector of embodiment 71, wherein said light beam is an unmodulated continuous wave light beam.</p><p>Embodiment 73: Said sensor signal is a longitudinal sensor signal, said longitudinal sensor signal being dependent on a beam cross-section of a light beam in said sensor layer for the same total power of illumination, said evaluation device comprising 73. A detector according to any one of embodiments 1-72, designed to generate at least one item of information about the longitudinal position of an object by evaluating said longitudinal sensor signal.</p><p>Embodiment 74: Said evaluation device preferably takes into account the known power of the illumination, and optionally the illumination is determined from at least one predetermined relationship between the geometry of the illumination and the relative position of the object with respect to the detector. 74. A detector according to embodiment 73, designed to take into account the modulation frequency to be modulated and to produce at least one item of information about the longitudinal position of the object.</p><p>Embodiment 75: A detector according to embodiment 73 or 74, wherein the sensor signal is a uniform sensor signal over the sensor layer.</p><p>Embodiment 76: The method of embodiments 73 to 75, wherein the evaluation device is configured to normalize the longitudinal sensor signal to produce information about the longitudinal position of the object independent of the intensity of the modified light beam. A detector according to any one.</p><p>Embodiment 77: According to embodiment 76, the evaluation device is configured to recognize whether the modified light beam is broadening or narrowing by comparing longitudinal sensor signals of different longitudinal sensors. detector.</p><p>Embodiment 78: Embodiment, wherein said evaluation device is configured to generate at least one item of information about the longitudinal position of the object by determining a diameter of a modified light beam from at least one longitudinal sensor signal 78. A detector according to any one of 73-77.</p><p>Embodiment 79: Said estimating device is preferably adapted to determine at least one item of information relating to the longitudinal position of the object, preferably of the beam diameter of the modified light beam for at least one propagation coordinate in the direction of propagation of the modified light beam. 79. Detection according to embodiment 78, configured to compare the beam properties of a known light beam with the diameter of said modified light beam from a known dependence and/or from a known Gaussian profile of the modified light beam vessel.</p><p>Embodiment 80: According to any one of embodiments 1-79, wherein the sensor signal is a lateral sensor signal, the lateral sensor signal provided by the electrical contact contacting the sensor layer. Detector.</p><p>Embodiment 81: The electrical contact is configured as at least one split electrode, the bias voltage source is applicable to the at least one split electrode, and the evaluation device further comprises a bias voltage source and the at least one split electrode. 81. A detector according to embodiment 80, designed to generate at least one item of information about the lateral position of an object by applying electrodes and by evaluating said lateral sensor signal.</p><p>Embodiment 82: The detector of embodiment 81, wherein said segmented electrode comprises at least two partial electrodes.</p><p>Embodiment 83: A detector according to embodiment 82, wherein at least four partial electrodes are provided, each partial electrode preferably being provided in a form comprising a T-shape.</p><p>Embodiment 84: A detector according to embodiment 82 or 83, wherein the current through the partial electrodes depends on the position of the modified light beam within the sensor layer.</p><p>Embodiment 85: The lateral sensor signal is generated according to the current through the partial electrodes, and the evaluation device generates information about the lateral position of the object from at least one ratio of the currents through the partial electrodes. 85. The detector of embodiment 84, which is configured.</p><p>Embodiment 86: The detector according to any one of embodiments 1-85, further comprising at least one illumination source.</p><p>Embodiment 87: An illumination source at least partially connected to and/or at least partially identical to the object; designed to at least partially illuminate the object with primary radiation 87. A detector according to embodiment 86, selected from: an illumination source.</p><p>Embodiment 88: A detector according to embodiment 87, wherein the light beam is produced by reflection of the primary radiation of the object and/or by emission by the object itself stimulated by the primary radiation.</p><p>Embodiment 89: A detector according to embodiment 88, wherein the spectral sensitivity of the sensor layer is covered by the spectral range of the illumination source.</p><p>Embodiment 90: A human-machine interface for exchanging at least one information between a user and a machine, especially when entering control commands, according to any one of embodiments 1 to 89 for the detector comprising at least one detector and designed to generate at least one item of geometric information of a user by means of said detector, said geometric information having at least one information item, in particular at least one control command; A human-machine interface designed to assign</p><p>Embodiment 91: The at least one item of geometric information of the user includes: position of the user's body; position of at least one body part of the user; orientation of the body of the user; 91. A human-machine interface according to embodiment 90 selected from the group consisting of: orientation of the portion.</p><p>Embodiment 92: According to embodiment 90 or 91, further comprising at least one beacon device connectable to the user, wherein the detector is adapted to generate information regarding the location of the at least one beacon device human-machine interface.</p><p>Embodiment 93: A human-machine interface according to embodiment 92, wherein the beacon device includes at least one illumination source configured to generate at least one light beam that is transmitted to the detector.</p><p>Embodiment 94: An entertainment device for performing at least one entertainment function, in particular a game, comprising at least one human-machine interface according to any one of embodiments 1-93 with reference to the human-machine interface, wherein the player is designed to input at least one item of information using said human-machine interface, and is designed to modify said entertainment function according to said information.</p><p>Embodiment 95: A tracking system for tracking the position of at least one movable object, comprising at least one detector according to any one of embodiments 1-89 for the detector, and comprising at least one tracking controller The tracking system further comprising, wherein the tracking controller is configured to track a series of positions of the object each including at least one item of information relating to the position of the object at a particular point in time.</p><p>Embodiment 96: The tracking system further comprises at least one beacon device connectable to an object, wherein the detector is configured to generate information regarding the position of the object in the at least one beacon device. 95. The tracking system of form 95.</p><p>Embodiment 97: A scanning system for determining at least one position of at least one object, comprising at least one detector according to any one of embodiments 1-89 relating to the detector, said at least further comprising at least one radiation source adapted to emit at least one light beam configured to illuminate at least one dot positioned on at least one surface of an object, said at least one A scanning system designed to generate at least one item of information relating to the distance between said at least one dot and said scanning system by using a detector.</p><p>Embodiment 98: A scanning system according to embodiment 97, wherein said illumination source comprises at least one artificial illumination source, in particular at least one laser light source and/or at least one incandescent lamp and/or at least one semiconductor light source.</p><p>Embodiment 99: A scanning system according to embodiment 97 or 98, wherein said illumination source emits a plurality of individual light beams, in particular an array of light beams exhibiting respective pitches, in particular regular pitches.</p><p>Embodiment 100: comprising at least one housing, wherein the at least one item of information relating to the distance between said at least one dot and said scanning system is a specific point on said at least one dot and said scanning system housing, in particular 99. The scanning system according to any one of embodiments 97-99, determined between a front end or a rear end of the housing.</p><p>Embodiment 101: The scanning system of embodiment 100, wherein the housing includes at least one of a display, buttons, a securing unit, and a leveling unit.</p><p>Embodiment 102: A stereoscopic system comprising at least one tracking system according to any embodiment referencing said tracking system and at least one scanning system according to any embodiment referencing said scanning system, wherein said tracking The system and the scanning system each include at least one photodetector arranged in parallel so as to be aligned in an orientation parallel to the optical axis of the stereoscopic viewing system, while at the same time with respect to an orientation perpendicular to the optical axis of the stereoscopic viewing system. A stereoscopic system positioned to show individual displacements.</p><p>Embodiment 103: The tracking system and the scanning system each include at least one longitudinal optical sensor, and the sensor signals of the longitudinal optical sensor are combined to determine an item of information regarding the longitudinal position of an object. 103. A stereoscopic system according to embodiment 102.</p><p>Embodiment 104: A stereoscopic viewing system according to embodiment 103, wherein the sensor signals of the longitudinal photosensor are distinguishable with respect to each other by applying different modulation frequencies.</p><p>Embodiment 105: Embodiment wherein said stereoscopic system further comprises at least one lateral light sensor, the sensor signal of said lateral light sensor being used to determine an item of information regarding the lateral position of an object 104. Stereoscopic system according to any one of 102-104.</p><p>Embodiment 106: A stereoscopic vision system according to embodiment 105, wherein the stereoscopic vision of the object is obtained by combining an item of information regarding the longitudinal position of the object and an item of information regarding the lateral position of the object.</p><p>Embodiment 107: A camera including at least one detector according to any one of embodiments 1 to 106 with reference to the detector.</p><p>Embodiment 108: A method of manufacturing a photodetector for optical detection of an incident light beam comprising the steps of: a) depositing a reflective layer on a partition of a circuit carrier, said reflective layer is designed to at least partially reflect said incident light beam; b) producing a sensor layer by depositing a photosensitive material on an at least partially transparent substrate layer, comprising: said sensor layer being designed to generate at least one sensor signal in a manner dependent on the illumination of the sensor layer by said incident and reflected light beams; c) carrying said sensor layer on said reflective layer; and d) providing the evaluation device, the evaluation device receiving a sensor signal and generating at least one item of information by evaluating the sensor signal. a process that is designed to</p><p>Embodiment 109: A method according to embodiment 108, wherein said reflective layer is deposited on a partition of said circuit carrier, in particular on a printed circuit board (PCB).</p><p>Embodiment 110: A method according to embodiment 108 or 109, referring to the method, wherein the substrate layer carrying the sensor layer is arranged on the reflective layer by applying an adhesive layer.</p><p>Embodiment 111: A method, wherein said reflective layer is obtained by depositing a metal layer, said reflective layer is preferably obtained by depositing at least one of a gold layer, a silver layer or a copper layer 111. The method of any one of reference embodiments 108-110.</p><p>Embodiment 112: The method according to any one of embodiments 108 to 111, wherein said reflective layer is deposited to exhibit a thickness of 10 nm to 100 μm, preferably 20 nm to 10 μm, more preferably 40 nm to 2 μm. described method.</p><p>Embodiment 113: The method of any one of embodiments 108-112 referring to the method, further comprising directly or indirectly attaching said sensor layer to said substrate layer.</p><p>Embodiment 114: The method of embodiment 113, wherein no gap is left or created between the substrate layer and the sensor layer.</p><p>Embodiment 115: The sensor layer is applied using a deposition method, the deposition method being chemical bath deposition, vacuum evaporation, sputtering, atomic layer deposition, chemical vapor deposition, spray pyrolysis, electrodeposition, anodization, electrical transformation, electroless immersion growth, continuous ion adsorption and reaction, molecular beam epitaxy, molecular vapor phase epitaxy, liquid phase epitaxy, inkjet printing, gravure printing, flexographic printing, screen printing, stencil printing, slot die coating, doctor blade, and 115. The method of embodiment 113 or 114, which is selected from the group consisting of: solution-gas interface techniques.</p><p>Embodiment 116: The photosensitive material used in said sensor layer is selected from the group consisting of dye solar cells, photoconductive materials, and quantum dots, with photoconductive materials being particularly preferred, referring to method embodiment 108 115. The method of any one of 115.</p><p>Embodiment 117: At least two separate electrical contacts are provided for contacting said sensor layer, said electrical contacts being designed to transmit said sensor signals to said evaluation device via said circuit carrier 117. The method of any one of embodiments 108-116, referring to the method.</p><p>Embodiment 118: Said electrical contacts are bonded to at least one external connection, preferably in the form of wire bonds, in particular gold (Au), aluminum (Al) or copper (Cu) wires, by using conductive leads 118. The method of embodiment 117, wherein</p><p>Embodiment 119: The method of embodiment 118, wherein said electrical connections are obtained by applying wire bonds between individual electrical contacts and corresponding receiving contacts.</p><p>Embodiment 120: A method according to embodiment 119, wherein said receiving contacts are contact pads, preferably further arranged on said circuit carrier, in particular on said printed circuit board (PCB).</p><p>Embodiment 121: The method of any one of embodiments 108 to 120 referring to the method, wherein a cover layer is produced, said cover layer at least partially, preferably completely covering said sensor layer.</p><p>Embodiment 122: The method of embodiment 121, wherein the conductive leads are bonded to the electrical contacts through the cover layer.</p><p>Embodiment 123: The intended use is distance measurement, especially distance measurement in traffic technology; position measurement, especially position measurement in traffic technology; entertainment applications; security applications; human-machine interface applications; tracking applications; Imaging or camera applications; Mapping applications for generating at least one map of space; Vehicle homing or tracking beacon detectors; Range and/or position measurement of objects with thermal properties; Machine vision applications; Logistics applications; vehicle applications; airplane applications; ship applications; spacecraft applications; robot applications; medical applications; ), ultrasonic sensors, or interferometry; infrared detection applications; heat detection applications; thermometer applications, heat seeking applications, flame detection applications, fire detection applications, smoke detection applications. , temperature sensing applications, spectroscopy applications; photocopying applications; xerography applications; exhaust gas monitoring applications; combustion process monitoring applications; pollution monitoring applications; air quality monitoring applications; quality control applications; temperature control applications; motion control applications; exhaust control applications; The use of the detector according to any one of embodiments 1-122.</p>

Further optional details and features of the invention are evident from the following description of preferred exemplary embodiments together with the dependent claims. In this regard, certain features can be implemented independently or in combination with other features. The invention is not limited to the exemplary embodiments. Exemplary embodiments are schematically illustrated in the drawings. Identical reference numerals in the individual figures refer to identical elements or elements having the same function or elements corresponding to each other with respect to their function.

Specifically, in the diagram:<figref num="1">Fig. 2 shows an exemplary embodiment of an optical detector according to the invention including a reflective layer;</figref><figref num="2">FIG. 10 illustrates a further exemplary embodiment of a detector further comprising a cover layer;</figref><figref num="3">Fig. 3 shows a comparison of experimentally measured detector signals between a photodetector according to the invention and a photodetector without a reflective layer;</figref><figref num="4">1 illustrates exemplary embodiments of detectors, detector systems, human-machine interfaces, entertainment devices, tracking systems and cameras according to the present invention;</figref>

FIG. 1 is a highly schematic illustration of an exemplary embodiment of a photodetector 110 according to the invention. Here the detector 110 is designed for optical detection, in particular for detecting at least one wavelength within at least one partition of the spectral range, the desired partition of the spectral range being ultraviolet (UV) It may be selected from the spectral range, the visible (VIS) spectral range and/or the infrared (IR) spectral range, wherein the IR range, ie the spectral range from 760 nm to 1000 μm, is particularly preferred.

Specifically, the detector may be designed to sense at least one possible optical property of the object 112 . In particular, the optically conceivable properties determinable by detector 110 may be selected from at least one of optical properties and/or geometric properties of object 112 . By way of example, the optical properties may preferably be selected from the transmittance, absorption, emission and/or reflectance of the object 112, while the geometric properties may in particular be selected from the object 112 relative to the detector 110. can point to a location. For the sake of simplicity, the object 112 is depicted only schematically in FIG. 4, but it can also be assumed that the object 112 is present in the embodiment according to FIGS. 1-3.

The detector 110 includes at least one substrate layer 114 having at least a first surface 116 and a second surface 118 , the second surface 118 being opposite the first surface 116 . As used herein, first surface 116 and/or second surface 118 of substrate layer 114 may preferably be a planar surface, as shown in FIGS. However, in alternative embodiments (not shown here), at least one of the first surface 116 or the second surface 118 of the substrate layer 114 may exhibit a curved surface, a curved surface deviating from a planar surface. Indicates an area where there is a possibility of As used herein, the curved surface may be specifically designed to correct for aberrations that incident light beam 120 may experience on its path through detector 110 . In particular, the curved surface may be selected from convex or concave. However, other types of curved surfaces are also conceivable.

For the purposes of the present invention, the incident light beam 120 is preferentially applied indirectly or preferably directly to the second surface 118 of the substrate layer 114 without leaving a gap between the substrate layer 114 and the sensor layer 122. impinge on the sensor layer 122, which may be attached to the Here, sensor layer 122 can be exactly a single continuous sensor layer, as shown herein. For this purpose, the sensor layer 122 can be easily produced advantageously with a thickness of 1 nm to 100 μm, preferably 10 nm to 10 μm, more preferably 100 nm to 1 μm, preferably by using a deposition method. It can be deposited on the substrate layer 114 by using a bath deposition process. However, alternative arrangements of sensor layer 122 or other deposition methods for producing sensor layer 122 may be feasible.

Herein, the sensor layer 122 generates at least one sensor signal in such a way that it relies on illumination of the sensor layer 122 by the incident light beam 120 and, as described in more detail below, by the reflected light beam 124. designed to generate According to the invention, sensor layer 122 includes at least one photosensitive material 126 . In a particularly preferred embodiment, the photosensitive material 122 comprises a photoconductive material 128, preferentially at least one chalcogenide material, in particular lead sulfide (PbS), lead selenide (PbSe), lead telluride (PbTe), Cadmium Telluride (CdTe), Indium Phosphide (InP), Cadmium Sulfide (CdS), Cadmium Selenide (CdSe), Indium Antimonide (InSb), Mercury Cadmium Telluride (HgCdTe; MCT), Copper Indium Sulfide (CIS) ), copper indium gallium selenide (CIGS), zinc sulfide (ZnS), zinc selenide (ZnSe), and copper zinc tin sulfide (CZTS). However, other chalcogenides or other types of photoconductive materials 128 can also be used. In alternative embodiments (not shown here), the photosensitive material 126 included in the sensor layer 122 may be selected from dye solar cells or quantum dot layers.

Further, detector 110 includes circuit carrier 130 . As commonly used, circuit carrier 130 is a platform designed to mechanically support and electrically connect electronic, electrical, and/or optical elements such as detector 110 or its partitions. point to In a particularly preferred embodiment of the present invention, circuit carrier 130 may be or include a printed circuit board (PCB) 132 . As shown schematically in FIG. 1, printed circuit board 132 includes only a single sheet and is therefore sometimes referred to as single-sided PCB 134 . However, printed circuit boards comprising one or more sheets, such as double-sided PCBs or multilayer PCBs, may also be applicable, where the different sheets are connected to each other by using so-called "vias". However, other types of circuit carriers 130 may also be applicable. Generally, the electronic, electrical and/or optical elements are soldered, welded, deposited, etc., or additionally or alternatively in designated seats within the circuit carrier 130 for this purpose. and/or embedded in the circuit carrier 130, such as by removing a partition of the circuit carrier 130, on the surface 136 of the printed circuit board 132. FIG.

Furthermore, the detector 110 comprises a reflective layer 138 , which is arranged on a partition of the circuit carrier 130 , in particular a partition of the surface 136 of the printed circuit board 132 . As used herein, the reflective layer 138 is specifically defined in such a manner that the incident light beam 120 after its previous transmission through the sensor layer 114 is at least partially, preferably fully, reflected to the sensor layer 114 as a reflected light beam 124. , designed to reflect the incident light beam 120 . This type of arrangement therefore allows the incident light beam 120 to be redirected to the sensor layer 114 as the reflected light beam 124, thereby reducing the loss of incident light during measurements with this type of detector 110. can be done.

Preferably, the reflective layer 138, in particular at least the surface 140 of the reflective layer 138 designed to be impinged by the incident light beam 120, is preferably a layer of gold, silver or copper, or at least a layer of gold, silver or copper. Including surface. Gold, silver and copper are particularly preferred here because they exhibit high reflectivity in the IR, for example over 90%, especially over the entire IR spectral range from 760 nm to 20 μm. Additionally, the gold layer 142 is more preferred because it can be easily manufactured by depositing gold on the receiving surface 136 of the circuit carrier 130 , especially the PCB 132 . However, other types of metal layers may also be suitable as reflective layer 138 . In particular, the reflective layer may exhibit a thickness of 10 nm to 100 μm, preferably 20 nm to 10 μm, more preferably 40 nm to 2 μm.

As used herein, reflective layer 138 is designed to reflect incident light beam 120 in a manner that causes diffuse reflection (not shown here), thereby scattering incident light beam 120 in different directions. good too. For this purpose, the surface 140 of the reflective layer may in particular be a rough surface 144 that reflects the incident light beam 120 at a narrower angle with respect to the surface 140 compared to a flat surface, or it may be Thus, the reflected light beam 124 travels a longer distance through the sensor layer 114 where it is likely to be absorbed. As a result, the rough surface 144 of the reflective layer 138 can thus be provided, among other things, to reduce the loss of incident light.

As a result, substrate layer 114 is at least partially transparent with respect to both incident light beam 120 and reflected light beam 124 . For this purpose, the substrate layer preferably comprises a material selected from glass, quartz, silicon (Si), transparent organic polymers or transparent conducting oxides (TCO), in particular transparent conducting oxides. (TCO) is aluminum oxide (Al₂O₃), titanium oxide (TiO₂), indium tin oxide (ITO), fluorine-doped tin oxide (SnO₂:F; FTO), aluminum-doped zinc oxide (AZO), magnesium oxide (MgO), or perovskite transparent conductive oxide. However, other types of materials may be feasible, depending on the desired wavelength range of detector 110 .

In the preferred exemplary embodiment shown in FIG. 1, the detector 110 can be positioned between the substrate layer 114 and the reflective layer 138, in particular between the second surface 118 of the substrate layer 114 and the surface 140 of the reflective layer 138. A layer 146 may further be included. Adhesive layer 146 includes an adhesive material to assemble two adjacent substrate layers 114 and reflective layer 138 to resist separation. As shown schematically in FIG. 1, the adhesive layer 146 leaves a gap, in particular, between the reflective layer 138 and the adhesive layer 146 on the one hand and between the adhesive layer 146 and the substrate layer 114 on the other hand. Or attached so as not to be generated. Here, adhesion layer 146 can preferably be exactly one continuous layer that can be positioned adjacent to both substrate layer 114 and reflective layer 138 . The particularly preferred embodiment of FIG. 1 thus makes it possible to place the substrate layer 114 carrying the sensor layer 122 on the reflective layer 138, preferably by applying an adhesive layer 146, whereby the reflective layer 138 can be placed at any desired location to reflect the incident light beam 120 so as to return the incident light beam 120 to the sensor layer 122 as efficiently as possible, particularly as the reflected light beam 124 .

As used herein, adhesive layer 146 may be at least partially transparent to incident light beam 120 or, alternatively, partially reflective to incident light beam 120. Well, thus assisting the effect of the reflective layer 138 . Regardless of the embodiment that may be used, incident light beam 120 may be reflected through substrate layer 114 toward sensor layer 122 as reflected light beam 124, as desired. To this end, adhesion layer 146 may exhibit a thickness selected to provide a tight and stable connection between substrate layer 114 and reflective layer 138 . Depending on the material selected for the adhesion layer 146, the thickness of the adhesion layer 146 may therefore be between 100 nm and 10 μm, more preferably between 250 nm and 5 μm.

Furthermore, the detector 110 preferably has electrical contacts 148 designed to directly or indirectly transmit at least one sensor signal generated in the sensor layer 122 to an evaluation device 150 (not shown here). , 148. Preferably, the electrical contacts 148, 148' are made of at least one selected from the group consisting of silver (Ag), platinum (Pt), molybdenum (Mo), aluminum (Al), gold (Au), and highly conductive graphene. Electrode materials can be included. As shown in FIG. 1, the electrical contacts 148, 148' may further be joined using bond wires or bonding wires 152, 152', where the bonding wires 152, 152' are specifically gold (Au), It may be or include aluminum (Al) or copper (Cu) wire. An additional adhesive layer (not shown here) is additionally provided on the electrical contacts 148, 148' to support the bond between the bonding wires 152, 152' and the electrode material of the electrical contacts 148, 148'. and the additional adhesion layer can include at least one of nickel (Ni), chromium (Cr), titanium (Ti), or palladium (Pd). However, other types of bonding wires and/or additional adhesive layers are also feasible. As further shown in FIG. 1, the bonding wires 152, 152' carrying the sensor signals may be led to contact pads 154, 154' containing conductive material disposed on the surface 136 of the circuit carrier 130, where From there the sensor signals may be led to the evaluation device 150 in a further direct or indirect manner. This arrangement preferably automatically picks up the substrate layer 114 carrying the sensor layer 122 and the electrical contacts 148, 148' and places them at selected locations on the circuit carrier 130, followed by bonding wires 152, 152'. , may allow for easy handling and contact of the detector 110 .

Thus, electrical contacts 148 , 148 may be designed to transmit sensor signals generated by sensor layer 122 to evaluation device 150 . Alternatively, sensor signals may be wirelessly transmitted from sensor layer 122 to evaluation device 150 . Therefore, the resulting sensor signal provided by the sensor layer 122 when both the incident light beam 122 and the reflected light beam 124 impinge depends on the properties of the photosensitive material 126, particularly the photoconductive material 128, contained in the sensor layer 122. do. The evaluation device 150 is generally provided by both the incident light beam 120 and the reflected light beam 124 for one or more optically possible properties of the at least one object 112 by evaluating sensor signals. Designed to produce at least one item of information. For this purpose, the evaluation device 150 may comprise one or more electronic devices and/or more software components for evaluating the sensor signals. The evaluation device 150 may thus be adapted to determine at least one item of information by comparing more than one sensor signal acquired by the sensor layer 122 .

Preferably, the evaluation device 150 provides at least information about the longitudinal position of the object 112 by comparing one or more longitudinal sensor signals of the sensor layer 122, which in this particular embodiment can be arranged as longitudinal photosensors. It can be adapted to determine one item. For this purpose, the detector 110 may be adapted in particular to generate a sensor signal by performing at least one current-voltage measurement and/or at least one voltage-current measurement. As is known for FiP devices, the longitudinal sensor signal can depend on the beam cross-section of the incident light beam 120 in the sensor layer 122, given the same total power of illumination. For the purpose of generating at least one item of information about the longitudinal position of the object 112, the evaluation device 150 thus detects at least one difference between the illumination geometry and the relative position of the object 112 with respect to the detector. It may be designed to adopt two predetermined relationships, thereby preferably taking into account the known output of illumination. Alternatively or additionally, the evaluation device 150 is adapted to determine at least one optical property of the object 112, e.g. can be adapted to However, it is also possible to apply other types of evaluation procedures.

Generally, the evaluation device 150 may be part of a data processing device and/or may comprise one or more data processing devices. Evaluation device 150 may be fully or partially integrated into circuit carrier 130 and/or fully or partially embodied as a separate device that may be electrically connected to sensor layer 122 in a wireless or wired manner. may be changed. The evaluation device 150 may include one or more additional components, such as one or more electronic hardware components and/or one or more software components, such as one or more measurement units and/or one or more It may further comprise an evaluation unit and/or one or more control units (not shown here).

A light beam 120 for illuminating detector 110 may be generated by luminescent object 112 . Alternatively or additionally, light beam 120 may be generated by a separate illumination source (not shown here), which may include an ambient light source and/or an artificial light source such as a light emitting diode. , adapted to illuminate the object 112 such that the object 112 can reflect at least a portion of the light generated by the illumination source in such a way that the light beam 120 can be configured to impinge on the photodetector 110. . In certain embodiments, the illumination source may be a modulated light source, and one or more modulation characteristics of the illumination may be controlled by at least one optional modulator. Alternately or additionally, modulation may occur in the beam path between the illumination source and object 112 and/or between object 112 and detector 110 . Further possibilities are conceivable. In this particular embodiment, it may be advantageous to take into account one or more modulation characteristics, in particular the modulation frequency, when evaluating the sensor signal to determine at least one item of information about the object 112 .

According to a further exemplary embodiment of detector 110 shown in FIG. 2, detector 110 may preferably further comprise an optional cover layer 156, which preferably comprises sensor layer 122. It may be directly deposited thereon. Here, the cover layer 156 may in particular be an amorphous layer comprising at least one metal-containing compound, which is preferably an oxide, hydroxide, chalcogenide, pnictide or aluminum (Al), titanium (Ti), tantalum (Ta), manganese (Mn), molybdenum (Mo), zirconium (Zr), hafnium (Hf), or carbides of tungsten (W), or combinations thereof obtain. Here, the cover layer, which may in particular exhibit a thickness of 10 nm to 600 nm, preferably 20 nm to 200 nm, may be or comprise the atomic deposition layer 158 . Alternatively, cover layer 156 may be produced by employing a chemical vapor deposition (CVD) process, such as a plasma-enhanced chemical vapor deposition (PECVD) process. Additionally, other deposition methods such as spin-coating or inkjet printing may also be applied.

The cover layer 156 can be used in particular to avoid as far as possible deterioration of the sensor layer 122 by external influences such as humidity and/or oxygen contained in the surrounding atmosphere. Thus, the cover layer 156 can provide an encapsulation, preferably a hermetic package, of the sensor layer 122, in particular by completely covering the accessible surface of the sensor layer 122. FIG. In addition, the cover layer preferentially interacts directly with the cover layer 156 in the sense that after deposition of the cover layer 156 on the sensor layer 122 and subsequent heat treatment, the photoconductive properties of the photoconductive material 156 can be significantly improved. It can contribute essentially to the activation of the photoconductive properties of photoconductive materials with which it can come into contact.

As shown schematically in FIG. 2, the cover layer 156 may also cover the electrical contacts 148, 148' designed specifically to contact the sensor layer 122 at different locations on the sensor layer 122. FIG. Additionally, the electrical contacts 148, 148' can be bonded through the cover layer 156, so that preferably bonding wires 152, 152' can be used.

For details regarding the features shown in FIG. 2, reference can be made to the description of FIG.

FIG. 3 shows a graph of the sensor signal IS received from the sensor layer 122 and provided by the evaluation device 150 in arbitrary units with respect to the wavelength λ of the incident light beam 120 in nm. This compares to the second graph 162 obtained for the comparative photodetector without the reflective layer disposed on the circuit carrier 130 with the gold layer 142 as the reflective layer 138 disposed on the circuit carrier 130. A clear increase in the sensor signal IS can be observed for the first graph 160, which refers to the detector 110 according to the invention in the embodiment shown in FIG. In this particular example, a distinct increase in sensor signal IS can be observed, especially in the mid-infrared range from 1.5 μm to 2.7 μm. However, other examples are also feasible.

As a further example, FIG. 4 illustrates a detector including at least one detector 110 disposed on a circuit carrier 130, particularly on a printed circuit board (PCB) 132, and more specifically, as described above, on a single-sided PCB 134. An exemplary embodiment of system 200 is shown. In particular, the detector 110 disclosed in one or more of the other embodiments, such as those shown in Figures 1 or 2, may be feasible for this purpose. Here, the detector 110 can be employed as a camera 202, particularly for 3D imaging, which can be made to acquire images and/or image sequences such as digital video clips. Further, FIG. 4 illustrates an exemplary embodiment of a human-machine interface 204 that includes at least one detector 110 and/or at least one detector system 200, and an entertainment device 206 that also includes the human-machine interface 204. embodiment. FIG. 4 further shows an embodiment of a tracking system 208 adapted to track the position of at least one object 112 including detector 110 and/or detector system 200. FIG. Regarding the detector 110, reference can be made to the full disclosure of this application. Basically all potential embodiments of the detector 110 can also be embodied in the embodiment shown in FIG. In this particular embodiment, detector 110 has a configuration according to an exemplary configuration as provided in FIG. Detector 110 thus has a substrate layer 114 having at least a first surface 116 and a second surface 118 , the second surface 118 being opposite the first surface 116 . Here, the substrate layer 114 carries a sensor layer 122 comprising a photosensitive material 126 , in particular a photoconductive material 128 , deposited on a second surface 118 of the substrate layer 114 . For purposes of the present invention, sensor layer 122 is designed to generate at least one sensor signal in a manner dependent on illumination of sensor layer 122 by both incident light beam 120 and reflected light beam 124 . In particular, detector 110 detects the It may be employed to determine at least one optical property, such as an optical property selected from transmittance, absorption, emission, and/or reflectance of object 112 . Additionally, sensor layer 122 is protected by cover layer 156 as described above.

Further, the sensor signal produced by the sensor layer 122 is used to produce at least one item of information about the object 112 provided by both the incident light beam 120 and the reflected light beam 124 by evaluating the sensor signal. provided to the evaluation device 150. For this purpose, the sensor signals are applied to the evaluation device 150 via electrodes 148, 148', wire bonds 152, 152', contact pads 154, 154' on the circuit carrier 130, and signal leads 210, 210'. be guided. Here, signal leads 210, 210' can be wireless and/or wired interfaces. Additionally, the signal leads 210, 210' may include one or more drivers and/or one or more measurement devices for modifying the sensor signal. Evaluator 150 may be fully or partially incorporated into one or more components of detector 110 . Evaluation device 150 may be contained in the housing containing detector 110 and/or in a separate housing. Evaluation device 150 includes one or more sensors for evaluating sensor signals, for example longitudinal evaluation unit 212 (denoted 'z') and/or lateral evaluation unit 212' (denoted 'xy'). electronic devices and/or one or more software components. By combining the results derived from these evaluation units 212, 212', position information 214, preferably three-dimensional position information, can be generated (denoted "x, y, z"). However, as mentioned above, at least one optical property of object 112, e.g. an optical property selected from transmittance, absorption, emission and/or reflectance of object 112, is preferably determined using evaluation device 150. can be determined by

In the exemplary embodiment shown in FIG. 4, the object 112 to be detected may be designed, for example, as a sports equipment and/or may form a control element 216, the position and/or orientation of which is determined by the user 218. can be manipulated. Thus, generally, in the embodiment shown in FIG. 4 or any other embodiment of detector system 200, human-machine interface 204, entertainment device 206, object 112 itself may be part of the named device, And, in particular, at least one control element 216 may be included, and in particular, the at least one control element 216 has one or more beacon devices 220, and the position of the control element 216 may be determined. and/or direction may preferably be manipulated by user 218 . As an example, object 112 may be or include one or more of a bat, racket, club or other sporting equipment and/or simulated sporting equipment. Other types of objects 112 are possible. Further, user 218 can be considered an object 112 whose position is detected. As an example, a user 218 may carry one or more beacon devices 220 attached directly or indirectly to their body.

Detector 110 detects at least one item of information on the longitudinal position of one or more of beacon devices 220 and at least one item of information on any of their lateral positions and/or the longitudinal direction of object 112. It may be adapted to determine at least one other item of information regarding the position and at least one item of information regarding the lateral position of any object 112 . In particular, the detector 110 may be adapted for identifying and/or imaging the color of the object 112, such as, for example, the different colors of the object 112, and more specifically the colors of the beacon device 220, which may include different colors. .

Detector 110 can thus be adapted to determine the position of at least one object 112 . Further, embodiments including detector 110, particularly camera 202, may be adapted to acquire at least one image of object 112, preferably a 3D image. As outlined above, determination of the position of object 112 and/or portions thereof by using detector 110 and/or detector system 200 is performed to provide machine 222 with at least one item of information: It can be used to provide a human-machine interface 204. In the embodiment schematically illustrated in FIG. 4, machine 222 may be or may include a computer system including at least one computer and/or data processing device. Other embodiments are possible. The evaluation device 150 may be and/or include a computer, and/or may be fully or partially implemented as a separate device, and/or may be fully integrated into the machine 222, in particular a computer. or may be partially incorporated. The same applies to tracking controller 224 of tracking system 208 , which may wholly or partially form part of evaluation device 150 and/or machine 222 .

Similarly, the human-machine interface 204 may form part of the entertainment device 206, as outlined above. Thus, by user 218 acting as object 112 and/or by user 218 manipulating object 112 and/or by control element 216 acting as object 112, user 218 is at least one command, for example at least one control command. One item of information can be entered into the machine 222, particularly the computer, by which entertainment functions can be varied, such as controlling the course of a computer game.

As outlined above, the detector 110 can have a straight or tilted beam path, an angled beam path, a branched beam path, a deflected or split beam path, or other types of beam paths. Further, the incident light beam 120 can propagate unidirectionally or bidirectionally once or repeatedly along each beam path or partial beam path.

110 Detector

112 object

114 substrate layer

116 1st surface

118 Second surface

120 incident light beam

122 sensor layer

124 reflected light beam

126 photosensitive material

128 photoconductive material

130 circuit carrier

132 Printed circuit board (PCB)

134 Single-sided PCB

136 surface

138 reflective layer

140 surface

142 gold layer

144 rough surface

146 adhesive layer

148, 148' electrical contacts

150 Evaluation device

152, 152' bonding wire

154, 154' contact pads

156 cover layer

158 atomic layer

160 first graph

162 second graph

200 detector system

202 camera

204 human machine interface

206 entertainment equipment

208 tracking system

210, 210 signal lead

212, 212' longitudinal evaluation unit, transverse evaluation unit

214 location information

216 control element

218 A user

220 beacon device

222 machine

224 tracking controller