Display device

The technical field of the present invention relates to display devices.

2. Description of the Related Art In recent years, with the progress of digitization technology, there has been a tendency to provide character information and image information in newspapers, magazines, etc. as electronic data. This type of electronic data generally has a feature that its contents can be browsed by being displayed on a display device provided in a PC or the like.

However, a display device provided with a PC or the like is significantly different from a paper medium such as a newspaper or a magazine, and has a problem of convenience such as difficulty of carrying.

On the other hand, flexible electronic paper has been proposed in order to solve the above-mentioned problems due to the difference in convenience compared to paper media (see Patent Document 1, for example). In the case of forming a flexible display portion of electronic paper using an element such as a transistor, it is necessary to provide a circuit for driving the transistor. In the case where the display portion of flexible electronic paper is formed using elements such as transistors, bending (bending) the electronic paper may break the circuit. Further, in the case where a flexible display portion of electronic paper is formed using elements such as transistors, bending of the electronic paper may be restricted by a drive circuit.

<p><patcit num="1"><text>JP-A-2003-337353</text></patcit></p>

<p>An object of one embodiment of the disclosed invention is to provide a display device in which a driver circuit or a connection between circuits is difficult to break when a flexible panel is handled.</p>

<p>One embodiment of the disclosed invention is a structure in which a bent portion is provided by bending an element substrate of a display device. A circuit for driving the display device is provided at the bent portion, and wiring is extended from the bending portion to improve the strength of the portion where the circuit for driving the display device is provided. Reduce breakage. In addition, the element substrate is bent at the connection portion between the external terminal electrode and the external connection wiring (FPC), and the end portion of the substrate where the external terminal electrode is formed and the external connection wiring are fitted. and improve the strength of the connection.</p><p>One embodiment of the disclosed invention includes a flexible element substrate, a display portion provided over the element substrate, and a bent portion provided by bending the element substrate. The curved section is a display device having a drive circuit for driving the display section.</p><p>One embodiment of the disclosed invention includes a flexible element substrate, a flexible sealing substrate, a display portion provided over the element substrate, and a display portion provided by bending the element substrate. a bent portion, the bent portion having a driving circuit for driving the display portion, and the element substrate protruding from the sealing substrate.</p><p>In one aspect of the disclosed invention, the display device may be a display device having a support for holding the element substrate.</p><p>In one aspect of the disclosed invention, the bent portion may be provided in a vertical direction or a horizontal direction with respect to the longitudinal direction of the support portion.</p><p>In one embodiment of the disclosed invention, a thin film transistor included in a driver circuit and a display portion may be a display device formed over an element substrate.</p><p>In one embodiment of the disclosed invention, the display device may be such that the element substrate is provided with an outer end portion and a curved portion, and the driver circuit is provided between the outer end portion and the curved portion. .</p><p>In one embodiment of the disclosed invention, the element substrate may be provided with a curved portion, and the driver circuit may be provided between the display portion and the curved portion.</p><p>One embodiment of the disclosed invention includes an element substrate having flexibility, a display portion provided over the element substrate, a support portion for holding the element substrate, and the element substrate provided by bending the element substrate. and a bent portion included in the supporting portion, the bent portion having an external connection electrode, and the external connection electrode and the external connection wiring provided by being fitted together.</p><p>One embodiment of the disclosed invention includes a flexible element substrate, a flexible sealing substrate, a display portion provided over the element substrate, and a support portion for holding the element substrate. and a bent portion provided by bending the element substrate and included in the support portion, the element substrate being provided protruding from the sealing substrate, and the bent portion being the external connection electrode. , wherein the external connection electrode and the external connection wiring are fitted together.</p><p>In one embodiment of the disclosed invention, the supporting portion includes a driver circuit for driving the display portion, and the driver circuit may be a display device electrically connected to an external connection wiring.</p><p>In one embodiment of the disclosed invention, the display element included in the display portion may be a display device which is an electrophoretic element, a liquid crystal element, or a light-emitting element.</p>

<p>According to one embodiment of the disclosed invention, it is possible to provide a durable display device in which driver circuits or connections between circuits are hard to break.</p>

<figref num="1">1 is a perspective view for explaining one embodiment of the present invention; FIG.</figref><figref num="2">1 is a perspective view for explaining one embodiment of the present invention; FIG.</figref><figref num="3">1A and 1B are a top view and a cross-sectional view for describing one embodiment of the present invention;</figref><figref num="4">1A and 1B are cross-sectional views for explaining one embodiment of the present invention;</figref><figref num="5">1A and 1B are a perspective view and a cross-sectional view for explaining one embodiment of the present invention;</figref><figref num="6">1A and 1B are a perspective view and a cross-sectional view for explaining one embodiment of the present invention;</figref><figref num="7">1A and 1B are cross-sectional views for explaining one embodiment of the present invention;</figref><figref num="8">1A and 1B are cross-sectional views for explaining one embodiment of the present invention;</figref><figref num="9">1A and 1B are cross-sectional views for explaining one embodiment of the present invention;</figref><figref num="10">1A and 1B are a perspective view and a cross-sectional view for explaining one embodiment of the present invention;</figref><figref num="11">1A and 1B are cross-sectional views for explaining one embodiment of the present invention;</figref><figref num="12">1A and 1B are cross-sectional views for explaining one embodiment of the present invention;</figref><figref num="13">1A and 1B are cross-sectional views for explaining one embodiment of the present invention;</figref><figref num="14">1A and 1B are diagrams for explaining an electronic device of one embodiment of the present invention;</figref><figref num="15">1A and 1B are diagrams for explaining an electronic device of one embodiment of the present invention;</figref>

Hereinafter, embodiments will be described in detail with reference to the drawings. However, it is obvious to those skilled in the art that the invention is not limited to the descriptions of the embodiments shown below, and that the form and details can be variously changed without departing from the spirit of the invention disclosed in this specification. . Also, configurations according to different embodiments can be combined as appropriate. In the configuration of the invention described below, the same reference numerals are used for the same parts or parts having similar functions, and repeated explanations thereof will be omitted.

Note that the size, layer thickness, or region of each component shown in the drawings and the like of each embodiment may be exaggerated for clarity. Therefore, it is not necessarily limited to that scale.

The terms such as "first", "second", "third", etc. used in this specification are added to avoid confusion of constituent elements, and are not numerically limited. Note that

(Embodiment 1) An outline of the configuration disclosed in this embodiment will be described with reference to FIGS. 1 and 5. FIG.

The display device described in this embodiment mode includes a flexible element substrate, a display portion provided on the element substrate, and a state in which one side of the flexible element substrate is held (restrained so as not to move). and a bent portion formed by bending the element substrate, and the bent portion includes a driving circuit for driving the display portion, for example, a scanning line side This configuration includes a drive circuit.

Further, the supporting portion has, for example, a signal line side driving circuit that outputs a signal to the signal line.

FIG. 1 shows a case where a supporting portion 102 is provided on one side of an element substrate 101 as an example of a display device. A specific configuration of the display device will be described below with reference to FIG. Note that FIG. 1(A) shows a perspective view with the display portion of the display device facing upward, and FIG. 1(B) shows a perspective view from the back side of FIG. 1(A).

The display device shown in FIGS. 1A and 1B includes an element substrate 101 provided with a display portion 103, a support portion 102 holding one side of the element substrate 101, and a display on the scanning line side of the display portion 103. It has a driving circuit 108 (also referred to as a scanning line driving circuit) that performs control and a driving circuit 106 (also referred to as a signal line driving circuit) that performs display control on the signal line side of the display section 103 . 1A and 1B also show a plurality of scanning lines 105 extending from the scanning line side driving circuit 108 and a plurality of signal lines 104 extending from the signal line side driving circuit 106. FIG. The display device shown in FIGS. 1A and 1B is a flexible display device, and the scanning line side driving circuit 108 scans a flexible substrate (for example, a plastic substrate) from the display surface side. Along the line 105, it is provided at the bent portion 107 on the back side of FIG. 1(B). Although not shown in FIGS. 1A and 1B, a sealing substrate is superimposed on the element substrate 101. As shown in FIG. By using an element substrate 101 having a larger area than the sealing substrate, the bent portion 107 can be formed only by the element substrate 101, so that the thickness of the bent portion 107 can be reduced. Therefore, by using an element substrate 101 having a larger area than the sealing substrate, it is possible to improve the easiness of bending the bending portion 107 .

Note that the scanning line driving circuit 108 may be provided on the surface of the element substrate 101 . A plurality of scanning line driving circuits 108 may be provided on the element substrate 101 . Further, it is preferable that the signal line side driving circuit 106 is provided inside the supporting portion 102 . With this configuration, damage to the signal line side drive circuit 106 can be reduced. As an example, the support section 102 can be provided as a columnar or cylindrical housing having a hollow, and the signal line side drive circuit 106 can be provided in the hollow portion. Further, when the supporting portion 102 is provided with a plate-shaped housing, the signal line side driving circuit 106 can be provided so as to overlap with the housing (for example, in contact with the housing).

It is preferable that the support portion 102 has a structure that is less likely to bend (has higher rigidity) than at least the element substrate 101 . As an example, the housing that constitutes the support section 102 can be made of plastic, metal, or the like that is thicker than the element substrate 101 . In this case, the display device can be configured to bend at a portion other than the supporting portion 102. FIG.

Further, the place where the support part 102 is provided is not particularly limited, but as an example, the support part 102 can be provided along one side of the element substrate 101 . For example, as shown in FIGS. 1(A) and 1(B), when the element substrate 101 has a rectangular shape, a supporting portion 102 can be provided along a predetermined side (so as to fix one side). . Note that the term "rectangular shape" as used herein includes the case where the corners are rounded. Also, the size or shape of the support portion 102 is not particularly limited.

As shown in FIGS. 1(A) and 1(B), the scanning line side driving circuit 108 is provided in the bending portion 107 provided in a direction perpendicular to the long axis direction of the supporting portion 102 . Scanning lines 105 are configured to extend from the back surface side to the front surface side of the element substrate along the bent portion from the scanning line side driving circuit 108 provided in the bent portion 107 . For this reason, the scanning line side driving circuit 108 is provided in a region where the element substrate 101 is bent toward the back side and doubled, so that the strength of the scanning line side driving circuit 108 can be improved. is less likely to break, and as a result, a durable display device can be obtained. In addition, at the bent portion formed by bending the substrate having flexibility, a curved portion (a portion having a rounded curved shape) is formed by bending the element substrate. Injuries to the user can be reduced.

Note that the bent portion 107 corresponds to a region formed by bending the element substrate 101 . At the bending portion 107, the element substrate 101 may be bent and the outer end portion may be adhered to the element substrate 101 and fixed, or may be fixed by pressing with another member. Outer edge refers to the edge of the substrate.

The manner of providing the bent portion 107 in which the scanning line side driving circuit 108 is provided is not limited to that shown in FIGS. As an example, like an element substrate 501 shown in FIG. 5A, by bending the substrate toward the surface side where the display portion 103 is located, the scanning line side driving circuit 108 is included between the substrates of the bending portion 107. may be configured. In the configuration shown in FIG. 5A, since the scanning line side driver circuit 108 can be provided inside the element substrate 501, the strength of the scanning line side driver circuit 108 can be further improved. The drive circuit is less likely to break, and as a result, a durable display device can be obtained.

Note that in the cross section of the bending portion 107 in which the scanning line side driver circuit 108 is provided as shown in FIGS. 1 and 5A, the driver circuit 108 may be provided in a region where the element substrate is bent and overlapped. As an example, as shown in FIG. 5(B), a curved portion 502 (a portion rounded and curved by bending the substrate at the bent portion) and an outer end portion 503 of the element substrate. A drive circuit 108 may be provided between them. As another example, the driving circuit 108 may be provided between the bending section 502 and the display section 504. FIG.

Further, by forming the scanning line side driver circuit 108 and the pixel circuit forming each pixel of the display portion 103 on a flexible substrate in the same process, cost reduction can be achieved.

Elements forming the pixel circuits forming the display portion 103 and the scanning line side driver circuit 108 can be formed using thin film transistors or the like. On the other hand, a circuit that operates at high speed such as the signal line side drive circuit 106 is formed using an IC (Integrated Circuit) formed using a semiconductor substrate such as silicon or an SOI substrate. can be set to

This embodiment can be implemented in appropriate combination with any structure described in any of the other embodiments.

(Second Embodiment) A configuration different from that of the first embodiment will be described with reference to FIGS. 2 to 4. FIG.

In the present embodiment, as shown in FIG. 2, a display device is shown in which a bent portion 201 is provided in a direction parallel to the opposite side of the support portion 102, that is, the long axis direction of the support portion 102. As shown in FIG.

In addition, as in the above embodiment, a curved portion can be formed by bending the periphery of the element substrate having flexibility, thereby reducing injury to the user caused by slipping a finger or the like on the edge of the display device. can do.

Next, FIG. 3(A) shows a plan view of the display device, FIG. 3(B) shows a cross section between AB in FIG. 3(A), and FIG. 3(C) shows a cross section of FIG. 3(B). shows an enlarged view of.

In the display device shown in FIG. 3A, the support portion 102 is formed using a hollow housing, and the signal line side driver circuit is provided inside the housing. Here, the signal line side driver circuit is formed of an IC 303 , and the IC 303 is provided inside the supporting portion 102 . The IC 303 can be formed using a semiconductor substrate such as silicon, an SOI substrate, or the like. Of course, circuits other than the signal line side drive circuit (for example, CPU, memory, etc.) can be provided in the IC.

Further, FIG. 3A shows a case where the IC 303 provided inside the supporting portion 102 is mounted on an external connection wiring (FPC; Flexible Printed Circuit). More specifically, IC 303 that controls display unit 103 is provided on external connection wiring 301 , and external connection wiring 301 is electrically connected to printed circuit board 302 . Then, at the connection portion 304 for electrically connecting the display device formed by bonding the element substrate 601 and the sealing substrate 603 to the external connection wiring 301, the external connection of the element substrate 601 having the external connection electrode is performed. As shown in FIGS. 3(B) and 3(C), the connection electrodes and the external connection wiring 301 are formed so as to be bent and fitted, and the external connection electrodes and the external connection wiring are electrically connected. to Therefore, it is possible to increase the contact area of the terminals and improve the fixing strength of the connecting portion, thereby reducing connection failures between the terminals and providing a durable display device.

As the element substrate 601 and the sealing substrate 603, a flexible substrate such as plastic can be used. Examples of flexible substrates that can be used include aramid resin, polyethylene naphthalate (PEN) resin, polyether sulfone (PES) resin, polyphenylene sulfide (PPS) resin, and polyimide (PI) resin. A prepreg, which is a structure in which fibers are impregnated with an organic resin, may also be used.

The connection between the element substrate 601 and the external connection wiring 301 at the connection portion 304 may be configured such that a space 401 is provided as shown in FIG. With the structure of FIG. 4A, the movable region of the display device can be widened.

Further, the connection between the element substrate 601 and the external connection wiring 301 at the connection portion 304 may be configured such that they are provided so as to be in close contact with each other up to the outer end portion 402 as shown in FIG. 4B. By adopting the configuration shown in FIG. 4B, the bonding strength between the element substrate 601 and the external connection wiring 301 can be increased.

Further, the periphery of the connection between the element substrate 601 and the external connection wiring 301 at the connection portion 304 may be filled with the adhesive member 403 as shown in FIG. 4(C). By adopting the configuration of FIG. 4(C), the bonding strength between the element substrate 601 and the external connection wiring 301 can be further increased.

This embodiment can be implemented in appropriate combination with any structure described in any of the other embodiments.

(Embodiment 3) In this embodiment, a structural example of a display device will be described using a perspective view and a cross-sectional view.

As the display device, electronic paper using an electrophoresis element or the like as a display element, a light-emitting display device (EL (electroluminescence) panel), a liquid crystal display device, or the like can be used. A display device is a panel in which a display element is sealed, and a terminal electrode (external terminal electrode) to which a signal is supplied from the outside is connected to a connector such as FPC (flexible printed circuit) or TAB (tape automated bonding). An external connection wiring such as a tape or TCP (Tape Carrier Package) is attached to electrically connect with an external circuit including a drive circuit. An IC, which is a driving circuit, may be directly mounted on the display device by a COG (Chip On Glass) method.

One mode of the display device will be described with reference to perspective views and cross-sectional views of FIGS. First, FIG. 6A shows a perspective view of the display device shown in FIG. 1A. FIG. 6B shows a cross-sectional view between dotted line AB in FIG. Note that FIG. 6(A) is the same view as FIG. 1(A), and the back side of FIG. 6(A) is as shown in FIG. 1(B), and detailed description is omitted here. do.

FIG. 6B shows an example having a display portion 103 having a pixel circuit and a scanning line side driver circuit 108. The display portion 103 and the scanning line side driver circuit 108 are provided on an element substrate 601 (also referred to as a first substrate). The driving circuit 108 is sealed with a sealing substrate 603 (also referred to as a second substrate) with a sealing material 602 .

The display portion 103 provided on the element substrate 601 and the scanning line side driver circuit 108 have a plurality of thin film transistors. A thin film transistor 605 included in the drive circuit 108 is illustrated. Insulating layers 606 and 607 are provided on the thin film transistors 604 and 605 . Note that an insulating film functioning as a base film may be provided under the thin film transistors 604 and 605 .

The thin film transistors 604 and 605 are not particularly limited, and various thin film transistors can be applied. FIG. 6B shows an example in which inverted staggered thin film transistors with a bottom gate structure are used as the thin film transistors 604 and 605 . The thin film transistors 604 and 605 are channel-etch type, but channel-protective inverted staggered thin-film transistors in which a channel protective film is provided on a semiconductor layer may be used. In addition to silicon and germanium, organic semiconductors, compound semiconductors, oxide semiconductors, and the like can be used as the semiconductor material of the semiconductor layer used in the thin film transistor. A thin film transistor using an organic semiconductor as a semiconductor material can be made strong against bending and impact. In addition to the semiconductor layer, by forming the insulating film and/or the conductive layer from an organic material or a conductive polymer material, the resistance to bending and impact can be increased.

A thin film transistor 604 provided in the display portion 103 is electrically connected to a display element to form a display device. The display element is not particularly limited as long as it can display, and various display elements can be used. FIG. 6B shows an example in which a twist ball method, which is a display method used for electronic paper, is used and a twist ball is used as a display element. Other display methods used for electronic paper include an electrophoretic method, a powder system (also called a toner display), a liquid crystal method, and the like. Electronic paper has the advantages of being as easy to read as paper, lower power consumption than other display devices, and being able to be made thin and light.

In the twist ball display method shown in FIG. 6(B), white and black spherical particles are arranged between the electrode layers used in the display element, and the direction of the spherical particles is controlled by generating a potential difference between the electrode layers. This is a method for displaying.

A black region 610a and a white region 610b are provided between the first electrode layer 608 connected to the thin film transistor 604 and the second electrode layer 609 provided on the sealing substrate 603, and the surrounding area is filled with liquid. A spherical particle 612 including a cavity 611 is provided, and the periphery of the spherical particle 612 is filled with a filler 613 such as resin. The second electrode layer 609 corresponds to a common electrode (counter electrode). The second electrode layer 609 is electrically connected with a common potential line.

6A and 6B, in the cross section of the bent portion 107 bending the periphery of the display device, the bent element substrate 601 is covered with the bent sealing substrate 603 from the outside. That is, the curvature of the element substrate 601 is larger than the curvature of the sealing substrate 603 . As a result, the sealing substrate 603 can be formed with a curved portion 614 that is rounded and bent, thereby reducing injury caused by slipping of a user's finger or the like.

Also, an electrophoretic element can be used as the display element instead of the twist ball. An example of using an electrophoretic element as a display element in the display portion 103 is shown in FIG.

Note that FIG. 7A shows a cross-sectional view in which the display portion 103 provided on the element substrate 601 is sealed by the sealing substrate 603 with the sealing material 602, as in FIG. 6B. is. Therefore, in FIG. 7(A), illustration and description of the same configuration as in FIG. 6(B) are omitted. The display element shown in FIG. 7(A) has a diameter of 10 μm to 10 μm and encloses a transparent liquid 701, negatively charged black fine particles 702a as first particles, and positively charged white fine particles 702b as second particles. A microcapsule 703 of about 200 μm is used.

When an electric field is applied by the first electrode layer 608 and the second electrode layer 609, the microcapsules 703 provided between the first electrode layer 608 and the second electrode layer 609 form white fine particles 702b, Black particles 702a can move in the opposite direction to display white or black. A display element to which this principle is applied is an electrophoretic display element. Since the electrophoretic display element has a high reflectance, it does not require an auxiliary light, consumes less power, and can be recognized even in a dimly lit place. In addition, even when power is not supplied to the display unit, it is possible to retain the displayed image. It is possible to keep

Note that the first particles and the second particles contain a dye and do not move in the absence of an electric field. Also, the colors of the first particles and the second particles are different (including colorless).

The dispersion of the microcapsules 703 in the solvent 704 is called electronic ink, and this electronic ink can be printed on the surface of glass, plastic, cloth, paper, and the like. Color display is also possible by using a color filter or pigment-containing particles.

In addition, the first particles and the second particles in the microcapsules 703 are conductive materials, insulator materials, semiconductor materials, magnetic materials, liquid crystal materials, ferroelectric materials, electroluminescent materials, electrochromic materials, magnetic A kind of material selected from migration materials or a composite material thereof may be used.

It is also possible to use electronic powder (registered trademark) as a powder system. FIG. 7(B) shows an example of using an electronic powder as a display element. Note that FIG. 7B, like FIG. 6B, shows a cross-sectional view in which the display portion 103 provided on the element substrate 601 is sealed with the sealing substrate 603 by the sealing material 602. is. A space 752 defined by the first electrode layer 608, the second electrode layer 609, and the rib 751 is filled with positively charged black powder 753a and negatively charged white powder 753b. Note that the space 752 is air.

When an electric field is applied by the first electrode layer 608 and the second electrode layer 609, the black powder particles 753a and the white powder particles 753b move in opposite directions, and white or black can be displayed. . Color powders such as red, yellow, and blue may be used as the powders.

Further, as the display element, a light-emitting element (EL element) utilizing electroluminescence may be used. Light-emitting devices utilizing electroluminescence are classified according to whether the light-emitting material is an organic compound or an inorganic compound. Generally, the former is called an organic EL device, and the latter is called an inorganic EL device.

In the organic EL element, when a voltage is applied to the light-emitting element, electrons and holes are injected from a pair of electrodes into a layer containing a light-emitting organic compound, and current flows. Then, recombination of these carriers (electrons and holes) causes the light-emitting organic compound to form an excited state, and light is emitted when the excited state returns to the ground state. Due to such a mechanism, such a light-emitting element is called a current-excited light-emitting element.

Inorganic EL devices are classified into dispersion-type inorganic EL devices and thin-film inorganic EL devices according to the device structure. A dispersed inorganic EL device has a light-emitting layer in which particles of a light-emitting material are dispersed in a binder. A thin-film inorganic EL device has a structure in which a light-emitting layer is sandwiched between dielectric layers, which are further sandwiched between electrodes. Note that an organic EL element is used as a light-emitting element for explanation here.

At least one of the pair of electrodes of the light-emitting element should be transparent in order to emit light. Then, a thin film transistor and a light emitting element are formed on a substrate, and top emission for extracting light from the surface opposite to the substrate, bottom emission for extracting light from the surface on the substrate side, and surface on the side of the substrate and the surface opposite to the substrate. There is a light emitting element with a double emission structure in which light is emitted from a double-sided emission structure, and any light emitting element with an emission structure can be applied.

FIG. 8A shows an example using a light-emitting display device (EL panel) as a display device. Note that FIG. 8A shows a cross-sectional view in which the display portion 103 provided on the element substrate 601 is sealed by the sealing substrate 603 with the sealing material 602, as in FIG. 6B. is. A light-emitting element 801 that is a display element is electrically connected to a thin film transistor 604 provided in the display portion 103 . Note that the structure of the light-emitting element 801 is a stacked structure of the first electrode layer 608, the electroluminescent layer 802, and the second electrode layer 803, but is not limited to the structure shown. The configuration of the light-emitting element 801 can be changed as appropriate according to the direction of light extracted from the light-emitting element 801 and the like.

The partition 804 is formed using an organic resin film, an inorganic insulating film, or organic polysiloxane. In particular, it is preferable to use a photosensitive material, form an opening on the first electrode layer 608, and form an inclined surface with a continuous curvature on the side wall of the opening.

The electroluminescent layer 802 may be composed of a single layer or may be composed of a plurality of laminated layers.

A protective film may be formed over the second electrode layer 803 and the partition 804 so that oxygen, hydrogen, moisture, carbon dioxide, or the like does not enter the light-emitting element 801 . As the protective film, a silicon nitride film, a silicon nitride oxide film, a DLC film, or the like can be formed. A space sealed by the element substrate 601, the sealing substrate 603, and the sealing material 602 is provided with a filling material 805 to be sealed. Thus, it is preferable to package (enclose) with a protective film (laminated film, ultraviolet curable resin film, etc.) or a cover material that has high airtightness and little outgassing so as not to be exposed to the outside air.

As the filler 805, in addition to an inert gas such as nitrogen or argon, UV curable resin or thermosetting resin can be used. butyral) or EVA (ethylene vinyl acetate) can be used. For example, nitrogen may be used as the filler.

If necessary, optical films such as polarizing plates, circular polarizing plates (including elliptically polarizing plates), retardation plates (λ/4 plate, λ/2 plate), color filters, etc. It may be provided as appropriate. Also, an antireflection film may be provided on the polarizing plate or the circularly polarizing plate. For example, anti-glare treatment can be applied to diffuse reflected light by unevenness of the surface and reduce glare.

FIG. 8B shows an example using a liquid crystal display device as the display device. Note that FIG. 8B shows a cross-sectional view in which the display portion 103 provided on the element substrate 601 is sealed with the sealing substrate 603 by the sealing material 602, as in FIG. 6B. is. 8B, a liquid crystal element 851 which is a display element includes a first electrode layer 608, a second electrode layer 609, and a liquid crystal layer 852. In FIG. An insulating film 853 and an insulating film 854 functioning as alignment films are provided so as to sandwich the liquid crystal layer 852 therebetween. The second electrode layer 609 is provided on the sealing substrate 603 side, and the first electrode layer 608 and the second electrode layer 609 are stacked with the liquid crystal layer 852 interposed therebetween.

Also, FIG. 8B shows columnar spacers 855 obtained by selectively etching the insulating film, and the spacers 855 are provided to control the film thickness (cell gap) of the liquid crystal layer 852. . A spherical spacer may be used.

Although not shown in the liquid crystal display device of FIG. 8B, optical members (optical substrates) such as color filters (colored layers), black matrices (light shielding layers), polarizing members, retardation members, antireflection members, etc. Set as appropriate. For example, circularly polarized light using a polarizing substrate and a retardation substrate may be used.

Moreover, a backlight, a sidelight, or the like may be used as the light source. It is preferable to use an EL panel as the backlight because it can be made thinner.

Alternatively, a liquid crystal exhibiting a blue phase without using an alignment film may be used. The blue phase is one of the liquid crystal phases, and is a phase that appears immediately before the cholesteric phase transitions to the isotropic phase when the temperature of the cholesteric liquid crystal is increased. Since the blue phase is expressed only in a narrow temperature range, the liquid crystal layer 852 uses a liquid crystal composition mixed with 5% by weight or more of a chiral agent in order to improve the temperature range. A liquid crystal composition containing a liquid crystal exhibiting a blue phase and a chiral agent has a short response speed of 10 μs to 100 μs, is optically isotropic, does not require alignment treatment, and has low viewing angle dependency.

Although FIG. 8B shows an example of a transmissive liquid crystal display device, it can be applied to a reflective liquid crystal display device or a transflective liquid crystal display device.

Note that in FIGS. 7A, 7B, 8A, and 8B, the element substrate 601 and the sealing substrate 603 can be made of translucent plastic or the like. As the plastic, an FRP (Fiberglass-Reinforced Plastics) plate, a PVF (polyvinyl fluoride) film, a polyester film, or an acrylic resin film can be used. A sheet having a structure in which an aluminum foil is sandwiched between PVF films or polyester films can also be used.

Note that an insulating layer functioning as a protective film may be provided over the thin film transistor 604 . The protective film is intended to prevent intrusion of pollutants such as organic substances, metal substances, and water vapor floating in the atmosphere, and is preferably a dense film. The protective film is a single layer of a silicon oxide film, a silicon nitride film, a silicon oxynitride film, a silicon nitride oxide film, an aluminum oxide film, an aluminum nitride film, an aluminum oxynitride film, or an aluminum oxynitride film, using a sputtering method. Alternatively, it may be formed by lamination.

For the insulating layer 607 functioning as a planarizing insulating film, a heat-resistant organic material such as polyimide, acrylic, benzocyclobutene, polyamide, or epoxy can be used.

In addition to the above organic materials, low dielectric constant materials (low-k materials), siloxane-based resins, PSG (phosphorus glass), BPSG (boron boron glass), and the like can be used. Note that the insulating layer may be formed by stacking a plurality of insulating films formed using these materials.

The method of forming the insulating layer 607 is not particularly limited, and depending on the material, the sputtering method, SOG method, spin coating, dipping, spray coating, droplet discharge method (inkjet method, screen printing, offset printing, etc.), doctor A knife, roll coater, curtain coater, knife coater and the like can be used. When the insulating layer is formed using a material liquid, the semiconductor layer may be annealed (at 200° C. to 400° C.) at the same time as the baking step. A display device can be manufactured efficiently by combining the baking process of the insulating layer with the annealing process of the semiconductor layer.

A display device performs display by transmitting light from a light source or a display element. Therefore, thin films such as a substrate, an insulating film, and a conductive film, which are provided in a display portion through which light is transmitted, are all translucent to light in the visible light wavelength region.

In the first electrode layer and the second electrode layer (also referred to as a pixel electrode layer, a common electrode layer, a counter electrode layer, etc.) that apply a voltage to the display element, the direction of light to be extracted, the location where the electrode layer is provided, and Translucency and reflectivity may be selected according to the pattern structure of the electrode layer.

The first electrode layer 608 and the second electrode layer 609 are formed of indium oxide containing tungsten oxide, indium zinc oxide containing tungsten oxide, indium oxide containing titanium oxide, indium tin oxide containing titanium oxide, and indium oxide. A light-transmitting conductive material such as tin oxide (hereinafter referred to as ITO), indium zinc oxide, or indium tin oxide to which silicon oxide is added can be used.

The first electrode layer 608 and the second electrode layer 609 are tungsten (W), molybdenum (Mo), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), and tantalum (Ta). , Chromium (Cr), Cobalt (Co), Nickel (Ni), Titanium (Ti), Platinum (Pt), Aluminum (Al), Copper (Cu), Silver (Ag) and other metals, their alloys, or their It can be formed using one or a plurality of metal nitrides.

Alternatively, the first electrode layer 608 and the second electrode layer 609 can be formed using a conductive composition containing a conductive polymer (also referred to as a conductive polymer). As the conductive polymer, a so-called π-electron conjugated conductive polymer can be used. Examples thereof include polyaniline or its derivatives, polypyrrole or its derivatives, polythiophene or its derivatives, or copolymers of two or more of these.

Further, since a thin film transistor is easily destroyed by static electricity or the like, it is preferable to provide a protection circuit for protecting a driver circuit. The protection circuit is preferably configured using nonlinear elements.

FIG. 9 shows a cross-sectional structure of the display device, which is different from that in FIG. 6(B). FIG. 9 shows a cross-sectional structure different from that of FIG. 6(B) in a cross-sectional view between dotted lines AB in FIG. 6(A).

FIG. 9 differs from FIG. 6B in that, in the cross-sectional structure of the bent portion 107, the first electrode layer 608 and the second electrode layer 609 in the region inside the sealing material 602 are shown sandwiched. The point is that the insulating layer 607 is covered with the sealing layer 901 without forming the element and the sealing substrate 603 in the cross-sectional structure of the bent portion 107 . In the bending portion 107, the first electrode layer 608, the second electrode layer 609, the sealing substrate 603, and the like, which contribute to display, can be eliminated, and the ease of bending the peripheral portion of the display device can be improved. can be done.

Next, FIGS. 10A and 10B show structures of display devices different from FIGS. 6A and 6B. First, FIG. 10A shows a perspective view of the display device shown in FIG. 5A. FIG. 10B shows a cross-sectional view between dotted line AB in FIG. Note that FIG. 10(A) is the same diagram as FIG. 5(A), and detailed description thereof will be omitted here. Also, the configuration of the display unit 103 in FIG. 10(B) is the same as that of the display unit 103 in FIG. 6(B), and detailed description thereof will be omitted here. 10B differs from the bent portion 107 in FIG. 6B in that the bent sealing substrate 603 is covered with the bent element substrate 601 from the outside. The other configuration is the same as FIG. 6(B), and detailed description thereof will be omitted here.

10(A) and 10(B), the bent sealing substrate 603 is covered with the bent element substrate 601 from the outside in the cross section of the bent portion 107 obtained by bending the periphery of the display device. That is, the curvature of the sealing substrate 603 is larger than the curvature of the element substrate 601 . As a result, the element substrate 601 can be formed with a curved portion 614 that is rounded and bent, thereby reducing injury caused by slipping of a user's finger or the like.

Note that in FIG. 10(B), similarly to FIGS. 7(A), 7(B), 8(A), and 8(B), microcapsules are used as display elements instead of twist balls. It is also possible to use a migration element, a powder type electrophoresis element, a light-emitting element, or a liquid crystal element.

FIG. 11 shows a cross-sectional structure of the display device, which is different from that in FIG. 10B. In FIG. 11, a cross-sectional view between dotted line AB in FIG. 10(A) shows a cross-sectional structure different from that in FIG. 10(B). FIG. 11 differs from FIG. 10B in that, in the cross-sectional structure of the bent portion 107, the first electrode layer 608 and the second electrode layer 609 in the region inside the sealing material 602 are shown sandwiched. The point is that the insulating layer 606 is covered with the sealing layer 901 without forming the element and the sealing substrate 603 in the cross-sectional structure of the bent portion 107 . In the bending portion 107, the first electrode layer 608, the second electrode layer 609, the sealing substrate 603, and the like, which contribute to display, can be eliminated as in FIG. 9, and the periphery of the display device can be easily bent. can be improved.

Next, FIGS. 12(A) and 12(B) show the structure of a display device different from FIGS. 6(A), (B), FIGS. 10(A) and (B). First, FIG. 12(A) shows a cross-sectional view of the display device shown in FIG. 4(C). FIG. 12B shows the details of the cross-sectional view of FIG. 12A, specifically showing the cross-sectional structures of the display portion 103 and the bent portion 1201. FIG. FIG. 12(A) is similar to FIG. 4(C), and detailed description thereof will be omitted here. Note that the configuration of the display unit 103 in FIG. 12(B) is the same as the display unit 103 in FIGS. 6(B) and 10(B), and detailed description thereof will be omitted here.

The configuration of the bent portion 1201 in FIG. 12(B) will be described. A bent portion 1201 in FIG. 12(B) includes an element substrate 601 extending from the display portion 103 and bent, an external connection wiring 1202 provided to fit with the element substrate 601, and a pixel electrode of the display portion 103. It has an external connection electrode 1203 formed simultaneously with one electrode layer 608 , a terminal electrode 1204 formed of the same conductive layer as the source electrode layer and the drain electrode layer of the thin film transistor 604 , and an anisotropic conductive film 1205 . In FIG. 12B, on the element substrate 601, in addition to the external connection electrode 1203 and the terminal electrode 1204, an insulating layer corresponding to the gate insulating film and the interlayer insulating layer of the thin film transistor 604 is laminated. . Note that the external connection electrode 1203 is electrically connected to a terminal of the external connection wiring 1202 through the anisotropic conductive film 1205 .

The external connection wiring 1202 is mounted on a substrate separately prepared with an IC formed of a single crystal semiconductor film or a polycrystalline semiconductor film. The connection method between the separately formed IC and the external connection electrode 1203 via the external connection wiring 1202 is not particularly limited, and the COG method, wire bonding method, TAB method, or the like can be used.

In the cross section of the bent portion 1201 obtained by bending the display device shown in FIG. 12(B), the element substrate 601 and the external connection wiring 1202 are fitted together. As a result, the contact area between the element substrate 601 and the external connection wiring 1202 can be increased, and the fixing strength can be increased.

12(B), similar to FIGS. 7(A), 7(B), 8(A), and 8(B), microcapsules are used instead of twist balls as display elements. It is also possible to use an electrophoretic element using , a powder type electrophoretic element, a light emitting element, and a liquid crystal element.

This embodiment can be implemented in appropriate combination with any structure described in any of the other embodiments.

Embodiment Mode 4 In this embodiment mode, examples of transistors included in a display device will be described with reference to FIGS. 13A to 13D show examples of thin film transistors that can be used as the thin film transistor 604 in Embodiment 3. FIG.

13A to 13D, an insulating film 1301 is formed over an element substrate 601, and a thin film transistor 604 is provided over the insulating film 1301. FIG. An insulating layer 1302 and an insulating layer 607 are formed over the thin film transistor 604, and a first electrode layer 608 electrically connected to the thin film transistor 604 is provided.

In a thin film transistor 604 illustrated in FIG. 13A, wiring layers 1303a and 1303b functioning as a source electrode layer and a drain electrode layer and a semiconductor layer 1304 are connected to each other.⁺This is a configuration in which they are in contact with each other without intervening a layer.

A thin film transistor 604 illustrated in FIG. 13B is a bottom-gate thin film transistor. A gate electrode layer 1305, a gate insulating layer 1307, a semiconductor layer 1304, a n acting as a source or drain region⁺It includes layers 1306a and 1306b and wiring layers 1303a and 1303b functioning as source electrode layers or drain electrode layers. n⁺Layers 1306a and 1306b are semiconductor layers having a lower resistance than semiconductor layer 1304. FIG.

Note that n⁺Layers 1306a and 1306b may be provided between gate insulating layer 1307 and wiring layers 1303a and 1303b. Also, n⁺A layer may be provided both between the gate insulating layer and the wiring layer and between the wiring layer and the semiconductor layer.

A thin film transistor 604 illustrated in FIG. 13C is a bottom-gate thin film transistor.⁺This is a configuration in which they are in contact with each other without intervening a layer.

A thin film transistor 604 illustrated in FIG. 13C has a gate insulating layer 1307 in the entire region including the thin film transistor 604 illustrated in FIG. A gate electrode layer 1305 is provided therebetween. Wiring layers 1303 a and 1303 b are provided on the gate insulating layer 1307 . A semiconductor layer 1304 is provided on the gate insulating layer 1307 and the wiring layers 1303a and 1303b. In addition to the wiring layers 1303a and 1303b, a wiring layer is provided on the gate insulating layer 1307, although not shown, and the wiring layer extends outside the outer peripheral portion of the semiconductor layer 1304. FIG.

A thin film transistor 604 illustrated in FIG. 13D is a top-gate thin film transistor. On the element substrate 601, which is a substrate having an insulating surface, and the insulating film 1301, n⁺A semiconductor layer 1304 including layers 1306 a and 1306 b , a gate insulating layer 1307 is formed over the semiconductor layer 1304 , and a gate electrode layer 1305 is formed over the gate insulating layer 1307 . Also n⁺Wiring layers 1303a and 1303b functioning as source electrode layers and drain electrode layers are formed in contact with the layers 1306a and 1306b. n⁺Layers 1306a and 1306b are semiconductor regions having a lower resistance than semiconductor layer 1304. FIG.

Although the single-gate structure is described in this embodiment mode, a multi-gate structure such as a double-gate structure may be used. In this case, a structure in which gate electrode layers are provided above and below the semiconductor layer may be employed, or a structure in which a plurality of gate electrode layers are provided only on one side (above or below) of the semiconductor layer may be employed.

A semiconductor material used for the semiconductor layer is not particularly limited. Examples of materials that can be used for a semiconductor layer of a thin film transistor are described.

The materials that form the semiconductor layers of semiconductor devices are amorphous (hereinafter also referred to as "AS") that are produced by vapor deposition or sputtering using semiconductor material gases such as silane and germane. A semiconductor, a polycrystalline semiconductor obtained by crystallizing an amorphous semiconductor using light energy or thermal energy, or a microcrystalline (also called semi-amorphous or microcrystalline, hereinafter also referred to as "SAS") semiconductor can be used. can. The semiconductor layer can be formed by a sputtering method, an LPCVD method, a plasma CVD method, or the like.

Considering the Gibbs free energy, a microcrystalline semiconductor film belongs to a metastable state intermediate between an amorphous state and a single crystal state. That is, it is a semiconductor having a third state that is stable in terms of free energy, and has short-range order and lattice distortion. Columnar or acicular crystals grow normal to the substrate surface. Microcrystalline silicon, which is a typical example of microcrystalline semiconductors, has a Raman spectrum of 520 cm that indicates single crystal silicon.^-1is shifted to the lower wavenumber side. That is, 520 cm indicating single crystal silicon^-1and 480 cm showing amorphous silicon^-1There is a peak in the Raman spectrum of microcrystalline silicon between . In addition, at least 1 atomic % or more of hydrogen or halogen is included to terminate dangling bonds. Further, by adding a rare gas element such as helium, argon, krypton, or neon to further promote lattice distortion, a stable and favorable microcrystalline semiconductor film can be obtained.

This microcrystalline semiconductor film can be formed by a high-frequency plasma CVD method with a frequency of several tens of MHz to several hundred MHz, or a microwave plasma CVD apparatus with a frequency of 1 GHz or higher. Typically, SiH₄, Si₂H.₆, SiH₂Cl₂, SiHCl₃Silicon hydride such as SiCl₄, SiF₄can be formed by diluting a silicon halide such as with hydrogen. Alternatively, the microcrystalline semiconductor film can be formed by diluting with one or more kinds of rare gas elements selected from helium, argon, krypton, and neon in addition to silicon hydride and hydrogen. In these cases, the flow ratio of hydrogen to silicon hydride is 5 times or more and 200 times or less, preferably 50 times or more and 150 times or less, more preferably 100 times.

Typical amorphous semiconductors include hydrogenated amorphous silicon, and typical crystalline semiconductors include polysilicon. Polysilicon (polycrystalline silicon) includes so-called high-temperature polysilicon, which uses polysilicon formed through a process temperature of 800°C or higher as the main material, and polysilicon formed at a process temperature of 600°C or lower. It includes so-called low-temperature polysilicon used as the main material, polysilicon obtained by crystallizing amorphous silicon using an element that promotes crystallization, and the like. Of course, as described above, a microcrystalline semiconductor or a semiconductor containing a crystal phase in part of the semiconductor layer can also be used.

In addition to simple substances such as silicon (Si) and germanium (Ge), compound semiconductors such as GaAs, InP, SiC, ZnSe, GaN, and SiGe can also be used as semiconductor materials.

When a crystalline semiconductor layer is used as the semiconductor layer, various methods (laser crystallization, thermal crystallization, or thermal crystallization using an element such as nickel that promotes crystallization) can be used to form the crystalline semiconductor film. crystallization method, etc.) may be used. Also, a microcrystalline semiconductor, which is SAS, can be crystallized by irradiating it with a laser to improve its crystallinity. If no element that promotes crystallization is introduced, the concentration of hydrogen contained in the amorphous silicon film is reduced to 1 by heating at 500°C for 1 hour in a nitrogen atmosphere before irradiating the amorphous silicon film with laser light. ×10²⁰atoms/cm³Release to:

This is because if the amorphous silicon film containing a large amount of hydrogen is irradiated with laser light, the amorphous silicon film will be destroyed.

The method of introducing the metal element into the amorphous semiconductor layer is not particularly limited as long as it is a method that allows the metal element to exist on the surface or inside the amorphous semiconductor film. A plasma treatment method (including a plasma CVD method), an adsorption method, and a method of applying a metal salt solution can be used. Of these methods, the method using a solution is simple and useful in that it facilitates adjustment of the concentration of the metal element. At this time, in order to improve the wettability of the surface of the amorphous semiconductor film and spread the aqueous solution over the entire surface of the amorphous semiconductor film, UV light irradiation in an oxygen atmosphere, thermal oxidation, and hydroxyl radicals are applied. It is desirable to form an oxide film by treatment with ozone water containing hydrogen peroxide or the like.

In addition, in the crystallization step of crystallizing the amorphous semiconductor film to form a crystalline semiconductor film, an element that promotes crystallization (also referred to as a catalytic element or a metal element) is added to the amorphous semiconductor film, followed by heat treatment ( Crystallization may be performed at 550°C to 750°C for 3 minutes to 24 hours). Elements that promote (accelerate) crystallization include iron (Fe), nickel (Ni), cobalt (Co), ruthenium (Ru), rhodium (Rh), palladium (Pd), osmium (Os), iridium (Ir ), platinum (Pt), copper (Cu) and gold (Au).

In order to remove or reduce an element that promotes crystallization from the crystalline semiconductor film, a semiconductor film containing an impurity element is formed in contact with the crystalline semiconductor film to function as a gettering sink. As the impurity element, an impurity element that imparts n-type conductivity, an impurity element that imparts p-type conductivity, a rare gas element, or the like can be used. ), bismuth (Bi), boron (B), helium (He), neon (Ne), argon (Ar), Kr (krypton), and Xe (xenon). A semiconductor film containing a rare gas element is formed on a crystalline semiconductor film containing an element that promotes crystallization, and heat treatment (at 550° C. to 750° C. for 3 minutes to 24 hours) is performed. The element promoting crystallization contained in the crystalline semiconductor film moves into the semiconductor film containing the rare gas element, and the element promoting crystallization in the crystalline semiconductor film is removed or reduced. After that, the semiconductor film containing a rare gas element that has become a gettering sink is removed.

For crystallization of the amorphous semiconductor film, heat treatment and crystallization by laser light irradiation may be combined, or heat treatment and laser light irradiation may be performed multiple times.

Alternatively, the crystalline semiconductor film may be formed directly on the substrate by a plasma method. Alternatively, a crystalline semiconductor film may be selectively formed over the substrate by a plasma method.

Alternatively, an oxide semiconductor may be used for the semiconductor layer. For example, zinc oxide (ZnO), tin oxide (SnO₂) can also be used. When ZnO is used for the semiconductor layer, the gate insulating layer is Y₂O₃, Al₂O₃, TiO₂, a lamination thereof, and the like, and ITO, Au, Ti, or the like can be used for the gate electrode layer, the source electrode layer, and the drain electrode layer. Also, In, Ga, or the like can be added to ZnO.

InMO as an oxide semiconductor₃(ZnO)_mA thin film represented by (m&gt;0) can be used. M represents one or more metal elements selected from gallium (Ga), iron (Fe), nickel (Ni), manganese (Mn), and cobalt (Co). For example, M may be Ga, or may include the above metal elements other than Ga, such as Ga and Ni or Ga and Fe. In addition to the metal element contained as M, some of the above oxide semiconductors contain Fe, Ni, other transition metal elements, or oxides of these transition metals as impurity elements. For example, an In--Ga--Zn--O-based non-single-crystal film can be used as the oxide semiconductor layer.

Oxide semiconductor layer (InMO₃(ZnO)_m(m &gt; 0) film) instead of In-Ga-Zn-O non-single-crystal film₃(ZnO)_m(m&gt;0) membranes may also be used. In addition to the above oxide semiconductors applied to the oxide semiconductor layer, In-Sn-Zn-O-based, In-Al-Zn-O-based, Sn-Ga-Zn-O-based, and Al-Ga- Zn-O system, Sn-Al-Zn-O system, In-Zn-O system, Sn-Zn-O system, Al-Zn-O system, In-O system, Sn-O system, Zn-O system, An In--Ga--O-based oxide semiconductor can be used.

This embodiment can be implemented in appropriate combination with any structure described in any of the other embodiments.

(Embodiment 5) In this embodiment, a specific example of application of the display device described in the above embodiments will be described.

FIG. 14A shows a portable information terminal including a main body 3001, display portions 3002 and 3003, a storage medium 3004, operation switches 3005 and the like. The display device described in the above embodiment can be applied to a display device including the display portion 3003 formed using a flexible substrate. Since the shape of the display portion can be freely designed in this manner, a portable information terminal having a desired shape can be manufactured. In addition, the display devices described in the above embodiments can make the drive circuits or the connections between the circuits less likely to break, and can provide a durable display device.

FIG. 14B shows an example of an electronic book reader equipped with the display device described in the above embodiments. First housing 3101 has first display unit 3102, first housing 3101 has operation buttons 3103, second housing 3104 has second display unit 3105, and The first housing 3101 and the second housing 3104 can be opened and closed by the supporting portion 3106 . With such a configuration, it is possible to operate like a paper book. , drive circuits, or connections between circuits can be made less fragile to provide a durable e-book.

FIG. 15(A) shows a display device 1502 for in-vehicle advertising of a vehicle such as a train 1501. FIG. When the advertisement medium is a printed matter of paper, the advertisement is replaced manually, but if a display device that performs display by a display element is used, the advertisement display can be changed in a short time without much manpower. . In addition, a stable image can be obtained without deterioration of display. In addition, by applying the display device described in the above embodiment mode to the display device 1502, a driver circuit or a connection portion between circuits can be made hard to break and durable for advertising purposes. display device can be provided.

Also, FIG. 15B shows a display device 1511 for outdoor advertising. By swinging the display device 1511 manufactured using a flexible substrate, the advertising effect of the display portion 1512 as an advertising medium can be enhanced. Advertisements are exchanged manually, but the display of advertisements can be changed in a short period of time by using a display device that performs display using display elements. In addition, stable images can be obtained without deterioration of display. In addition, by applying the display device described in the above embodiment to the display portion 1512, driver circuits or connections between circuits are hard to break and durable. Advertising media can be provided.

This embodiment can be implemented in appropriate combination with any structure described in any of the other embodiments.

101 element substrate

102 support

103 display

104 Signal line

105 scanning line

106 drive circuit

106 drive circuit

107 bent part

108 drive circuit

201 bent part

301 External connection wiring

302 Printed board

303 I C

304 connection

401 space

402 Outer end

403 Adhesive material

500 Under nitrogen atmosphere

501 element substrate

502 curved part

503 Outer end

504 display

601 element substrate

602 sealing material

603 sealing substrate

604 thin film transistor

605 thin film transistor

606 insulating layer

607 insulating layer

608 electrode layer

609 electrode layer

610a black area

610b White area

611 cavity

612 spherical particles

613 filler

614 curved part

701 liquid

702a Fine particles

702b Fine particles

703 microcapsules

704 solvent

751 rib

752 space

753a Granules

753b Granules

801 light emitting element

802 electroluminescent layer

803 electrode layer

804 bulkhead

805 filler

851 liquid crystal element

852 liquid crystal layer

853 insulating film

854 insulating film

855 Spacer

901 sealing layer

1201 bent part

1202 External connection wiring

1203 External connection electrode

1204 terminal electrode

1205 anisotropic conductive film

1301 insulating film

1302 insulating layer

1303a wiring layer

1304 semiconductor layer

1305 gate electrode layer

1306a n+ layer

1307 gate insulating layer

1501 Electric train

1502 Display device

1511 Display device

1512 display

3001 body

3002 display

3003 display

3004 storage medium

3005 operation switch

3101 housing

3102 display

3103 Manual operation button

3104 housing

3105 display

3106 support

4311 Display device