Temperature regulation circuit
20 claims: 3 independent, 17 dependent
- 1温度変化に対して正に比例する第1の電流を生成するように形成される第1の電流源と、 温度変化に対して負に比例する第2の電流を生成するように形成される第2の電流源と、 第1の中間電流を生成するために前記第1の電流に第1の増幅率を適用するように形成される第1の増幅器と、 第2の中間電流を生成するために前記第2の電流に第2の増幅率を適用するように形成される第2の増幅器と、 前記第1の中間電流と前記第2の中間電流との和に基づいて熱を生成するように形成される抵抗素子であり、前記生成された熱が第1のデバイスに作用する位置に配置される前記抵抗素子と、 前記第1のデバイスのそばで前記抵抗素子の周囲の領域に更なる熱が与えられたことによる前記第1の電流源及び前記第2の電流源の温度変化に起因した前記第1の電流及び前記第2の電流の変化が、前記抵抗素子により生成される熱の変化となって前記第1のデバイスの温度を所望の温度に維持するように、前記第1の増幅率及び前記第2の増幅率を調節するように形成されるコントローラと、 を有する温度調節システム。
- 2前記第1の中間電流と前記第2の中間電流との和に 第3の増幅率を適用して 熱電流を 生成 するように形成される第3の増幅器を更に有し、前記抵抗素子は前記熱電流に基づいて熱を生成するように形成される、請求項1に記載の温度調節システム。
- 3前記コントローラは、前記抵抗素子により生成される熱を調節するために、前記第3の増幅器の 前記 第3の増幅率を調節するように更に形成される、請求項2に記載の温度調節システム。
- 4前記コントローラは、前記第1のデバイスのそばで前記抵抗素子の周囲の領域に前記更なる熱が与えられた後に、前記所望の温度を維持するように前記第1の増幅率及び前記第2の増幅率を計算するように更に形成される、請求項1に記載の温度調節システム。
- 5前記コントローラは、前記第1のデバイスのそばで前記抵抗素子の周囲の領域に前記更なる熱が与えられる前に成立する前記第1の増幅率及び前記第2の増幅率の間の関係を維持することに基づいて、前記所望の温度を維持するための前記第1の増幅率及び前記第2の増幅率に対する調整量を算出するように更に形成される、請求項4に記載の温度調節システム。
- 6前記抵抗素子の周囲の領域に前記更なる熱が与えられる前に成立する前記第1の増幅率及び前記第2の増幅率の間の関係は、前記所望の温度における前記第1の電流及び前記第2の電流に基づいている、請求項5に記載の温度調節システム。
- 7当該温度調節システムは、出力を生成するように形成される前記第1のデバイスを含むシステムに含まれており、該出力の値は前記第1のデバイスの温度に依存し、当該温度調節システムは前記第1のデバイスの出力の値を検出するように形成されるセンサを更に有し、前記コントローラは、前記センサによって検出される値が特定の値に近似的に等しくなるまで、前記第1の増幅率及び前記第2の増幅率を調節するように更に形成される、請求項1に記載の温度調節システム。
- 8前記第1のデバイスは光学デバイスであり、前記出力は電磁ビームであり、前記出力の値は前記電磁ビームの波長を示す、請求項7に記載のシステム。
- 9出力を生成するように形成されるデバイスであって、前記出力の値は前記デバイスの温度に依存する、デバイスと、 前記デバイスの温度を調節するように形成される温度調節システムと、 を有するシステムであって、前記温度調節システムは、 温度依存性を有し、第1の電流を生成するように形成される第1の電流源と、 前記第1の電流源の温度依存性と対称的である温度依存性を有し、第2の電流を生成するように形成される第2の電流源と、 第1の中間電流を生成するために前記第1の電流に第1の増幅率を適用するように形成される第1の増幅器と、 第2の中間電流を生成するために前記第2の電流に第2の増幅率を適用するように形成される第2の増幅器と、 生成される熱が前記デバイスの出力の値に影響を及ぼすように、前記第1の中間電流と前記第2の中間電流との和に基づいて熱を生成するように形成されるヒータと、 前記第1の電流源及び前記第2の電流源の温度変化に起因する前記第1の電流及び前記第2の電流の変化が、前記ヒータにより生成される熱の変化となって前記デバイスの温度を近似的に等しく維持するように、前記第1の増幅率及び前記第2の増幅率を調節するように形成されるコントローラと、 を有するシステム。
- 10前記第1の電流は温度変化に対して正に比例し、前記第2の電流は温度変化に対して負に比例する、請求項9に記載のシステム。
- 11前記温度調節システムは、前記第1の中間電流と前記第2の中間電流との和に 第3の増幅率を適用して 熱電流を生成するように形成される第3の増幅器を更に有し、前記ヒータは前記熱電流に基づいて熱を生成するように形成される、請求項9に記載のシステム。
- 12前記コントローラは、前記ヒータの周囲の温度を調節するために、前記第3の増幅器の 前記 第3の増幅率を調節するように更に形成される、請求項11に記載のシステム。
- 13前記温度調節システムは、前記デバイスの出力の値を検出するように更に形成されるセンサを更に含み、前記コントローラは、前記センサにより検出される値が特定の値に近似的に等しくなるまで、前記第1の増幅率及び前記第2の増幅率を調節するように形成される、請求項9に記載のシステム。
- 14前記コントローラは、前記デバイスの周囲の領域に対して第2のデバイスにより熱が与えられた後に、前記デバイスの温度を近似的に等しく維持するための前記第1の増幅率及び前記第2の増幅率に対する調整量を算出するように更に形成される、請求項9に記載のシステム。
- 15前記コントローラは、前記デバイスの周囲の領域に対して前記第2のデバイスにより熱が与えられる前に成立する前記第1の増幅率及び前記第2の増幅率の間の関係を維持することに基づいて、前記デバイスの温度を近似的に等しく維持するための前記第1の増幅率及び前記第2の増幅率に対する調整量を算出するように形成される、請求項14に記載のシステム。
- 16デバイスの温度を調節する方法であって、 温度依存性を有する第1の電流源から提供される第1の電流に第1の増幅率を適用して第1の中間電流を生成するステップと、 前記第1の電流源の温度依存性と対称的である温度依存性を有する第2の電流源から提供される第2の電流に第2の増幅率を適用して第2の中間電流を生成するステップと、 ヒータを利用して、前記第1の中間電流と前記第2の中間電流との和に基づいて、第1のデバイスの温度を所望の温度に調整するように、熱を生成するステップと、 少なくとも1つの第2のデバイスにより前記第1のデバイスに追加的な熱が加えられた後に、前記追加的な熱による前記第1の電流源及び前記第2の電流源の温度変化に起因する前記第1の電流及び前記第2の電流の変化が、前記ヒータにより生成される熱の変化となって前記第1のデバイスの前記所望の温度を近似的に維持するように、前記第1の増幅率及び前記第2の増幅率を調節するステップと、 を有する方法。
- 17前記第1の電流は温度変化に対して正に比例し、前記第2の電流は温度変化に対して負に比例する、請求項16に記載の方法。
- 18当該方法は、温度依存性を有する前記第1のデバイスの出力に基づいて、前記第1の増幅率及び前記第2の増幅率を調節するステップを更に有し、前記第1の増幅率及び前記第2の増幅率は、前記第1のデバイスが特定の値で出力を生成するまで、前記ヒータにより生成される熱を調節するために調節され、前記第1のデバイスは、前記ヒータにより生成される熱が、前記第1のデバイスを前記所望の温度にする場合に、前記特定の値で前記出力を生成する、請求項16に記載の方法。
- 19前記少なくとも1つの第2のデバイスにより追加的な熱が前記第1のデバイスに加えられた後に、前記第1のデバイスの前記所望の温度を近似的に維持するための前記第1の増幅率及び前記第2の増幅率に対する調整量を算出するステップを更に有する請求項16に記載の方法。
- 20前記少なくとも1つの第2のデバイスにより追加的な熱が前記第1のデバイスに加えられる前に成立する前記第1の増幅率及び前記第2の増幅率の間に成立する関係を維持することに基づいて、前記第1の増幅率及び前記第2の増幅率に対する調整量が算出される、請求項19に記載の方法。
Independent claims20
96 paragraphs, as filed
The embodiments disclosed by the present application relate to a temperature control system, a temperature control method, and the like.
Electromagnetic beams, such as laser beams, are frequently used to transmit digital data, for example in fiber optic systems for long-distance telephone and internet communications. Therefore, optical technology plays an important role in modern telecommunications and data communications. Specific examples of optical elements used in such systems include light sources or electromagnetic radiation sources such as light emitting diodes and lasers, waveguides, optical fibers, lenses and other optical elements, photodiodes and other optical sensors, optics. Includes semiconductors for optical sensing, optical modulators, and the like.
Systems utilizing optics often assume that the electromagnetic beam is precisely controlled at a particular wavelength in order to perform the desired task. The wavelength of the electromagnetic beam can be disturbed by fluctuations in the system (eg, fluctuations in electromagnetic energy, voltage, current, temperature, etc.). There is concern that such fluctuations will change the wavelength of the electromagnetic beam and render the system inoperable.
<p> The contents described in the present application are not limited to the embodiment for solving some of the above problems and the embodiment for operating only in the above environment. Rather, the above description of the background art is merely an example of a technical field in which the embodiments described in the present application may be used.</p><p> An issue of the embodiment in one aspect is to stabilize the operation of a system using an optical system.</p>
<p> The temperature control system according to one embodiment has a first current source formed to generate a first current that is positively proportional to the temperature change and a second current that is negatively proportional to the temperature change. A second current source formed to generate a first current, and a first amplifier formed to apply a first amplification factor to the first current to generate a first intermediate current. A second amplifier is formed to apply a second amplification factor to the second current to generate a second intermediate current, and heat is generated based on the first and second intermediate currents. The first device is formed so that the initial temperature around the resistor element is maintained after heat is applied to the region around the resistor element by the first device. And a temperature control system having a controller formed to adjust the second amplification factor to regulate the heat generated by the resistance element.</p>
<figref num="1">The figure which shows an example of the temperature control system.</figref><figref num="2A">Another example of a temperature control system is shown.</figref><figref num="2B">Another example of a temperature control system is shown.</figref><figref num="3">The figure which shows the flowchart about the method example of adjusting the temperature of a device.</figref><figref num="4">The figure which shows the silicon die which carries a temperature control system formed by this application.</figref><figref num="5">The figure which shows the flowchart about another method example of adjusting the temperature of a device.</figref>
<Outline of Embodiment> According to one embodiment, a temperature control system formed to control the temperature of a device is provided. The "device" may be referred to as a "device" or the like. The system may include first and second temperature dependent current sources that are formed to generate first and second currents, respectively. The system also has a first amplifier formed to apply a first amplification factor to the first current to generate a first intermediate current and a second to generate a second intermediate current. Includes a second amplifier formed to apply a second amplification factor to two currents. The system also includes heaters that are formed to generate heat based on first and second intermediate currents, and the heaters are arranged such that the heat generated affects the device. In addition, the system includes a controller formed to regulate the first and second amplification factors, which approximates the changes in the first and second currents due to temperature changes in the first and second current sources. The changes in heat generated by the heater to maintain a physically equal device temperature.
The challenges and effects of the embodiments are realized and achieved at least by the elements, features and combinations clearly defined in the claims.
It is said that both the above general description and the following specific description relate to exemplary or exemplary examples and should not be construed to limit the content of the claims. Should be understood.
<Drawings> Specific embodiments will be described and explained in more detail by using the attached drawings.
Figure 1 shows an example of a temperature control system.
Figure 2A shows another example of a temperature control system.
Figure 2B shows another example of a temperature control system.
FIG. 3 shows a flowchart of an example method of adjusting the temperature of the device.
FIG. 4 shows a silicon die responsible for the temperature control system formed by the present application.
FIG. 5 shows a flowchart of another example method of adjusting the temperature of the device.
<Detailed Description of the Embodiment> According to one embodiment, a temperature control system formed to control the temperature of a temperature-dependent device is disclosed. A temperature-dependent device is formed to produce an output, the value of which output depends on the temperature of the device.
The temperature control system is a temperature dependent and temperature change with a first current source formed to generate a first current that is temperature dependent and positively proportional to the temperature change. It may include a second current source formed to generate a second current proportional to the negative direction with respect to. The first and second currents are added in the temperature control system and provided to the heater to generate heat that affects the temperature of the device. The temperature control system includes a controller, which controls the amplification factor applied to the first and second currents, controls the current applied to the heater, and controls the heat generated and the temperature of the device. Is formed to do.
The controller is formed to select the amplification factor applied to the first and second currents, keeping the temperature of the device constant or even when heat is applied to the device by other devices near the device. The amplification factors applied to the first and second currents are selected so that the amount of heat generated by the heater is effective in keeping them approximately equal. In particular, the controller is formed to maintain the device at a temperature selected based on the desired output value of the device, which depends on the temperature of the device.
Hereinafter, embodiments will be described with reference to the accompanying drawings.
FIG. 1 shows an exemplary temperature control system 100 (hereinafter sometimes referred to as "system 100") formed by at least one embodiment described herein. The system 100 includes a first current source 110, a second current source 112, a first amplifier 120, a second amplifier 122, a third amplifier 130, a heater 140, a controller 150, and a sensor. Includes 152 and. FIG. 1 also shows the device 160, and the system 100 is formed to regulate the temperature of the device 160.
The first current source 110 may be formed to generate a first current and provide the first current to the first amplifier 120. The first current source 110 may have a temperature dependence such that the first current is positively proportional to the temperature change. "Proportional in the positive direction" means that it is substantially proportional to 0 or a positive proportional coefficient. For example, the first current may increase as the temperature of the first current source 110 rises and decrease as the temperature of the first current source 110 falls. In one embodiment, the first current source 110 may include a bipolar transistor or a complementary metal oxide semiconductor (CMOS) transistor. Alternatively or additionally, the first current source 110 may include a combination of a plurality of transistors of the same type or different types in combination with other passive or active circuit devices or in a single form.
The second current source 112 may be formed to generate a second current and provide the second current to the second amplifier 122. The second current source 112 may have a temperature dependence such that the second current is negatively proportional to the temperature change. "Proportional in the negative direction" means that it is substantially proportional to 0 or a negative proportional coefficient. For example, the second current may decrease as the temperature of the second current source 112 rises and may increase as the temperature of the second current source 112 falls. In one embodiment, the second current source 112 may include a bipolar transistor or a complementary metal oxide semiconductor (CMOS) transistor. Alternatively or additionally, the second current source 112 may include a combination of multiple transistors of the same type or different types, either in combination with other passive or active circuit devices or in a single form.
The first amplifier 120 is formed so as to receive the first current from the first current source 110 and apply the first amplification factor to the first current to generate the first intermediate current. May be good. The first intermediate current may be applied to the third amplifier 130.
The first amplification factor applied by the first amplifier 120 may be 1, less than 1, or greater than 1. The first amplifier 120 may be formed as a variable amplifier so that the first amplifier 120 can change the first amplification factor applied to the first current. Therefore, the magnitude of the first intermediate current varies depending on the first amplification factor applied by the first amplifier 120. The magnitude of the first amplification factor of the first amplifier 120 may be controlled by the controller 150.
The second amplifier 122 is formed so as to receive a second current from the second current source 112 and apply a second amplification factor to the second current to generate a second intermediate current. May be good. The second intermediate current may be applied to the third amplifier 130. Therefore, the third amplifier 130 may receive the sum of the first and second intermediate currents. "Total" may be referred to as "addition" or "sum" and the like.
The second amplification factor applied by the second amplifier 122 may be 1, less than 1, or greater than 1. The second amplifier 122 may be formed as a variable amplifier so that the second amplifier 122 can change the second amplification factor applied to the second current. Therefore, the magnitude of the second intermediate current varies depending on the second amplification factor applied by the second amplifier 122. The magnitude of the second amplification factor of the second amplifier 122 may be controlled by the controller 150.
The third amplifier 130 may be formed to receive the sum of the first and second intermediate currents from the first and second amplifiers 120 and 122. The third amplifier 130 may be formed to generate a thermal current by applying a third amplification factor to the sum of the first and second intermediate currents. The thermal current may be provided to the heater 140.
The third amplification factor applied by the third amplifier 130 may be 1, less than 1, or greater than 1. The third amplifier 130 may be formed as a variable amplifier so that the third amplifier 130 can change the third amplification factor applied to the sum of the first and second intermediate currents. Therefore, the magnitude of the thermal current varies depending on the third amplification factor applied by the third amplifier 130. The magnitude of the third amplification factor of the third amplifier 130 may be controlled by the controller 150.
The heater 140 may be formed to receive a heat current and generate heat based on the heat current. For example, the heater 140 may be formed to generate more heat when the thermal current increases, and the heater 140 may be formed to generate less heat when the thermal current decreases.
The heater 140 may be located near the device 160 so that the heat generated by the heater 140 affects the temperature of the device 160. Therefore, if the heater 140 generates a lot of heat, the temperature of the device 160 may rise, and if the heater 140 generates a little heat, the temperature of the device 160 may decrease. In one embodiment, the heater 140 and the device 160 may be arranged in a positional relationship in which the temperature of the device 160 is equal to or approximately equal to the temperature in the vicinity of the heater 140. Alternatively or additionally, the heater 140 and the device 160 may be arranged in such a positional relationship that the temperature of the device 160 is not approximately equal to the temperature near the heater 140. For example, one or more between the heater 140 and the device 160 such that the temperature near the heater 140 differs from the temperature of the device 160 by 1%, 5%, 10%, 15%, 20% or other percentage. Different types of materials may be present. Therefore, the temperature of the heater 140 and the temperature of the device 160 are related to each other, whether they are approximately equal or not.
In one embodiment, the first and second current sources 112 have a heater 140 such that the heat generated by the heater 140 affects the temperatures of the first and second current sources 110 and 120. It may be placed near. By affecting the temperatures of the first and second current sources 110 and 112, the heater 140 has the magnitude of the first and second currents generated by the first and second current sources 110 and 112, respectively. May affect. The first and first so that other devices that are near the device 160 and generate heat that affects the temperature of the device 160 also affect the temperatures of the first and second current sources 110 and 112. The current sources 110 and 112 of 2 may be located near the device 160.
Device 160 may include any type of device formed to produce an output of temperature dependent values. For example, device 160 may include optics and the output of the device may include an electromagnetic beam. The value of the electromagnetic beam may include (value) the electromagnetic beam wavelength depending on the temperature. For example, if the temperature of the device 160 rises, the wavelength of the electromagnetic beam may increase, and if the temperature of the device 160 falls, the wavelength of the electromagnetic beam may decrease.
As another example, the device 160 may include a voltage source having an output that is a voltage. The value of the voltage output by the device 160 may include (the value of) the magnitude of the voltage. The device 160 may be formed such that the magnitude of the voltage increases with increasing temperature and decreases with increasing temperature.
The sensor 152 may be formed to detect the output value of the device 160 and provide the detected output value to the controller 150. For example, if the device 160 was an optical device, the sensor 152 may include a photodiode formed to detect the wavelength of the electromagnetic beam output by the optical device.
The controller 150 is formed so as to receive the detected output value from the sensor 152. The controller 150 may be formed to determine the first, second, and third amplification factors for the first, second, and third amplifiers 120, 122, 130. By adjusting the first, second, and third amplification factors, the controller 150 regulates the thermal current and regulates the heat generated by the heater 140. By adjusting the heat generated by the heater 140, the controller 150 controls the temperature of the device 160. By controlling the temperature of the device 160, the controller 150 may control the output value of the device 160.
In one embodiment, the controller 150 may be formed to select the magnitude of the first, second, and third amplification factors that result in the device 160 having a desired value of output. The controller may first select the magnitude of the first, second, and third amplification factors, and receive the detected output value from the sensor 152. Based on the detected output value, the controller 150 adjusts the temperature of the device 160 by adjusting the magnitude of one or more of the first, second, and third amplification factors, thereby adjusting the device 160. The output value of may be adjusted to be equal to or approximately equal to a particular value (eg, desired value). The temperature of the device 160 that results in the output value of the device 160 equal to or approximately equal to a particular value may be determined as the desired value for the device 160.
After the amount of heat extending from another device (not shown) in the vicinity of the device 160 to the device 160 changes, the controller 150 increases the magnitude of one or more of the first, second, and third amplification factors. It may be adjusted again to adjust the heat generated by the heater 140, thereby maintaining the desired temperature of the device 160. For example, the first, second, and third so that the output value of device 160 is equal to or within the range of 1%, 2%, 5%, 10%, or other percentage of the desired output value of device 160. One or more of the amplification factors of the device 160 may be readjusted to maintain the desired temperature of the device 160. The controller 150 may maintain the temperature around the heater 140 by adjusting one or more of the first, second, and third amplification factors to maintain the desired temperature of the device 160.
After heat is applied to the device 160 from another device, the magnitude of one or more of the first, second, and third amplification factors selected by the controller 150 is applied from the heater 140 to the device 160. Further changes in heat are selected to allow the system 100 to automatically adjust the heat generated by the heater 140 (eg, without input from the controller 150). For example, changes in the first and second currents due to temperature changes in the first and second current sources 110 and 112 result in changes in the heat generated by the heater 140, bringing the temperature of the device 160 to the desired temperature. The controller 150 may be formed to adjust one or more of the first, second, and third amplification factors so as to maintain an approximation.
The system 100 may operate to automatically regulate the heat generated by the heater 140 based on the temperature-dependent first and second current sources 110 and 112. In that case, since the first and second current sources 110 and 112 are temperature dependent, the change in heat applied to the device 160 from other devices is the heat applied to the first and second current sources 110 and 112. Also affects. Changes in heat applied to the first and second current sources 110 and 112 result in changes in the magnitude of the first and second currents. Changes in the magnitude of the first and second currents change the thermal current and regulate the amount of heat generated by the heater 140. By adjusting the heat generated by the heater 140, the temperature of the device 160 is approximately maintained at the desired temperature. As a result, the system 100 automatically compensates for further changes in heat applied to the device 160 without any adjustment (or even) of the amplification factor by the controller 150. As a result, the system 100 causes further changes in the heat applied to the device 160, without relying on information from the sensor 152 such as the output value from the device 160 or other feedback information about the temperature of the device 160.
After heat is applied to the device 160 in various forms, the controller 150 may be formed to determine how to adjust one or more of the first, second, and third amplification factors. In one embodiment, the controller 150 may calculate the amount of adjustment for one or more magnitudes of the first, second, and third amplification factors. The calculation of the adjustment amount may be based on the relationship established between two or more amplification factors before heat is applied to the device 160 from another device. In one embodiment, the relationship between the two or more amplification factors is the first generated by the first and second current sources 110 and 112 at the desired temperature before the thermal change due to the other device occurs. And the second current may be based on the desired temperature of the device 160.
Alternatively or additionally, the controller 150 may use the feedback from the sensor 152 to determine how to adjust the magnitude of one or more of the first, second, and third amplification factors. Good. In these and other embodiments, the controller 150 sweeps over the possible range for one or more magnitudes of the first, second, and third amplification factors and the detected output value of the device 160. And the desired output value of the device 160 may be compared. The selected magnitude for one or more of the first, second, and third amplification factors results in detection values that are equal to or approximately equal to the desired value, and the selected magnitude is Determined as one or more of the first, second, and third amplification factors used to maintain the desired temperature of the device 160. In these and other embodiments, the controller 150 maintains the relationship between the two or more amplification factors that are established before the thermal change to the device 160 by other devices occurs, while maintaining the first, second, and third. Sweeping may be performed over the possible range for two or more magnitudes of the amplification factors of. For example, the controller 150 maintains a relationship between two or more amplification factors that result in the device 160 having the desired output before the thermal change to the device 160 occurs, while maintaining the first, second, and third. Sweeping may be performed over the possible range for two or more magnitudes of the amplification factor of. Modifications, additions, omissions, etc. to the system 100 may be made without exceeding the scope of disclosure according to the present application.
FIG. 2A shows a specific example of another temperature control system 200A (referred to as "system 200A") formed by at least one embodiment described herein. The system 200A includes a first current source 210, a second current source 212, a first amplifier 220, a second amplifier 222, a third amplifier 230, a resistor element 240, and a controller 250. Includes photodiode 252 and light modulator 260.
The first current source 210 is a temperature-dependent first current I<sub>p</sub>The first current, for example, may be expressed by the following equation: I<sub>p</sub>(ΔT) = I<sub>op</sub>+ K<sub>p</sub>ΔT where I<sub>op</sub>Is the current from the first current source 210 at the initial temperature, K<sub>p</sub>Is a positive proportional coefficient to the temperature change of the first current source 210, and ΔT is the temperature change from the initial temperature.
The second current source 212 is a temperature-dependent second current I<sub>n</sub>The second current, for example, may be expressed by the following equation: I<sub>n</sub>(ΔT) = I<sub>on</sub>+ K<sub>n</sub>ΔT where I<sub>on</sub>Is the current from the second current source 212 at the initial temperature, K<sub>n</sub>Is a negative proportional coefficient with respect to the temperature change of the second current source 212, and ΔT is the temperature change from the initial temperature.
The first and second current sources 210 and 212 are the first and second currents I.<sub>p</sub>And I<sub>n</sub>To the first and second amplifiers 220 and 222, respectively.
The first amplifier 220 has a first amplification factor G.<sub>p</sub>The first current I<sub>p</sub>Apply to G<sub>p</sub>I<sub>p</sub>First intermediate current equal to I<sub>pint</sub>Includes a variable amplifier formed to produce. First amplification factor G<sub>p</sub>The size of may be controlled by the controller 250.
The second amplifier 222 has a second amplification factor G.<sub>n</sub>The second current I<sub>n</sub>Apply to G<sub>n</sub>I<sub>n</sub>Second intermediate current equal to I<sub>nint</sub>Includes a variable amplifier formed to produce. Second amplification factor G<sub>n</sub>The size of may be controlled by the controller 250.
1st and 2nd intermediate current I<sub>pint</sub>And I<sub>nint</sub>Is G<sub>p</sub>I<sub>p</sub>+ G<sub>n</sub>I<sub>n</sub>Third intermediate current equal to I<sub>sum</sub>Is summed to produce. Third intermediate current I<sub>sum</sub>Also has temperature dependence. Third intermediate current I<sub>sum</sub>Is given to the third amplifier 230. The third amplifier 230 has a third amplification factor G.<sub>t</sub>The third intermediate current I<sub>sum</sub>Apply to G<sub>t</sub>I<sub>sum</sub>Thermal current equal to I<sub>h</sub>Includes a variable amplifier formed to produce. Third amplification factor G<sub>t</sub>The size of may be controlled by the controller 250. Thermal current I<sub>h</sub>Is provided for the resistor element 240. Thermal current I as an example<sub>h</sub>May be expressed by the following equation.
I<sub>h</sub>(ΔT) = G<sub>t</sub>(G<sub>p</sub>(I<sub>op</sub>+ K<sub>p</sub>ΔT) + G<sub>n</sub>(I<sub>on</sub>+ K<sub>n</sub>ΔT)) The resistance element 240 has a resistance R having a temperature dependence, and as an example, the temperature dependence may be expressed by the following equation: R (ΔT) = R.<sub>0</sub>+ K<sub>r</sub>ΔT where R<sub>0</sub>Is the resistance of the resistance element 240 at the initial temperature, K<sub>r</sub>Is the temperature coefficient of the resistance element 240, and ΔT is the temperature change from the initial temperature. In these and other embodiments, the resistor element 240 is the thermal current I output from the third amplifier 230.<sub>h</sub>May include a resistor or other resistance element that produces heat when provided (to the resistance element 240).
Thermal current I flowing through the resistor element 240<sub>h</sub>Is I<sub>h</sub><sup>2</sup>Brings × R power. The electric power generated by the thermal current Ih affects the temperature T in the peripheral region of the resistance element 240, and as an example, the temperature T in the peripheral region of the resistance element 240 may be expressed by the following equation: T = I<sub>h</sub><sup>2</sup>(ΔT) × R (ΔT) × K<sub>t</sub>Where K<sub>t</sub>Is the medium or the thermal resistance of the medium surrounding the resistance element 240. When expanded, the formula for the temperature T around the resistor element 240 is expressed as: T = G:<sub>t</sub><sup>2</sup>× (G<sub>p</sub>(I<sub>op</sub>+ K<sub>p</sub>ΔT) + G<sub>n</sub>(I<sub>on</sub>+ K<sub>n</sub>ΔT)))<sup>2</sup>× (R<sub>0</sub>+ K<sub>r</sub>ΔT) × K<sub>t</sub> If the temperature T is the initial temperature, then the temperature change ΔT may be assumed to be zero. In this case, the temperature T is expressed as: T = G<sub>t</sub><sup>2</sup>× (G<sub>p</sub>I<sub>op</sub>+ G<sub>n</sub>I<sub>on</sub>)<sup>2</sup>× R<sub>0</sub>× K<sub>t</sub> If the temperature T is not equal to the initial temperature and the higher-order components of the temperature change ΔT are ignored, then the temperature T is expressed as: T = (G)<sub>t</sub><sup>2</sup>× (G<sub>p</sub>I<sub>op</sub>+ G<sub>n</sub>I<sub>on</sub>)<sup>2</sup>× R<sub>0</sub>× K<sub>t</sub>) + ((G<sub>t</sub><sup>2</sup>× K<sub>t</sub>× (G<sub>p</sub>I<sub>op</sub>+ G<sub>n</sub>I<sub>on</sub>)) × ((G<sub>p</sub>I<sub>op</sub>+ G<sub>n</sub>I<sub>on</sub>) × K<sub>r</sub>) × ((G<sub>p</sub>K<sub>p</sub>+ G<sub>n</sub>K<sub>n</sub>) × R<sub>0</sub>)) The ΔT light modulator 260 is located in the peripheral region of the resistance element 240 and is affected by the heat generated by the resistance element 240. It may be assumed that the formula for the ambient temperature T of the resistor element 240 represents the temperature of the light modulator 260.
The light modulator 260 may be formed to output an electromagnetic beam of a specific wavelength. The wavelength of the electromagnetic beam may depend on the temperature of the light modulator 260.
The photodiode 252 may be arranged to receive a portion of the electromagnetic beam from the light modulator 260 and may be formed to generate a current and / or voltage representing the wavelength of the electromagnetic beam. The photodiode 252 is formed to provide the generated current and / or voltage to the controller 250.
The controller 250 may be formed to receive a current and / or voltage representing the wavelength of the electromagnetic beam from the sensor 152 (photodiode 252). The controller 250 has a first, second, and third amplification factor G of the first, second, and third amplifiers 220, 222, and 230.<sub>p</sub>, G<sub>n</sub>, G<sub>t</sub>It may be formed so as to determine the size of each. By adjusting the magnitude of the first, second, and third amplification factors, the controller 250 may adjust the thermal current and the heat generated by the resistance element 240. The controller 250 may control the temperature of the light modulator 260 by adjusting the heat generated by the resistor element 240. By controlling the temperature of the light modulator 260, the controller 250 may control the output value of the light modulator 260. In one embodiment, the first and second currents I due to temperature changes in the first and second current sources 210 and 212.<sub>p</sub>And I<sub>n</sub>The controller 250 has a first, second, and third amplification factor G so that the change in the result results in a change in the heat generated by the resistor element 240.<sub>p</sub>, G<sub>n</sub>, G<sub>t</sub>It may be formed to adjust the size of one or more of them. The change in heat generated by the resistor 240 results in maintaining approximately the same temperature in the light modulator 260, even if heat is applied to the light modulator 260 by other devices.
An operation example of the system 200A will be described below. It is assumed that the system 200A and the light modulator 260 are at the initial temperature. During the first calibration step (or calibration step), the controller 250 selects the first and second amplification factors Gp and Gn, and sets the first and second amplification factors Gp and Gn to the first and second, respectively. Notify the amplifiers 220 and 222 of 2. Controller 250 has first and second amplification factors G based on previous (or past) amplification factors used by system 200A, other calculation results or other factors.<sub>p</sub>And G<sub>n</sub>May be randomly selected.
The first and second amplifiers 220 and 222 are the first and second currents I generated by the first and second current sources 210 and 212.<sub>p</sub>And I<sub>n</sub>1st and 2nd amplification factors G, respectively<sub>p</sub>And G<sub>n</sub>Apply the first and second intermediate currents G<sub>p</sub>I<sub>p</sub>And G<sub>n</sub>I<sub>n</sub>To generate. First and second intermediate current G<sub>p</sub>I<sub>p</sub>And G<sub>n</sub>I<sub>n</sub>Is the current I<sub>sum</sub>Is synthesized to form a third amplifier 230.
Controller 250 has an initial third amplification factor G<sub>t</sub>Select the initial third amplification factor G<sub>t</sub>May be given to the third amplifier 230. Early third amplification factor G<sub>t</sub>May be randomly selected based on the previous amplification factor used by the system 200A, other calculation results or other factors. The third amplifier 230 has a third amplification factor G.<sub>t</sub>I<sub>sum</sub>Applied to the thermal current I provided to the resistor element 240<sub>h</sub>May be generated. The resistor element 240 may generate power that changes the temperature of the light modulator 260.
The light modulator 260 may generate an electromagnetic beam having an initial wavelength (initial wavelength). The photodiode 252 may receive the electromagnetic beam and send a current and / or voltage representing the wavelength of the electromagnetic beam to the controller 250. The controller 250 may confirm the wavelength of the electromagnetic beam and compare the confirmed wavelength with the desired wavelength. "Confirmation" in this case may be referred to as "judgment", "discrimination", "decision" and the like. The desired wavelength may be determined based on the system in which the light modulator 260 is operating or based on other factors.
If the confirmed wavelength is not equal to the desired wavelength, controller 250 will see the thermal current I<sub>h</sub>Third amplification factor G to increase or decrease<sub>t</sub>The temperature of the light modulator 260 may be adjusted accordingly. The controller 250 may continue to monitor the wavelength of the electromagnetic beam and adjust the third amplification factor Gt until the wavelength of the electromagnetic beam becomes equal to or approximately equal to the desired wavelength. A third amplification factor G that results in an electromagnetic beam wavelength equal to or approximately equal to the desired wavelength.<sub>t</sub>"Final third amplification factor G<sub>t</sub>May be referred to as. If the wavelength of the electromagnetic beam is equal to or approximately equal to the desired wavelength, the first calibration step of the system 200A may be completed.
After the initial calibration step (eg, after the wavelength of the electromagnetic beam is equal to or approximately equal to the desired wavelength), the temperature of the light modulator 260 is referred to as "desired temperature", as an example. It may be expressed by the following equation: T = G<sub>t</sub><sup>2</sup>× (G<sub>p</sub>I<sub>op</sub>+ G<sub>n</sub>I<sub>on</sub>)<sup>2</sup>× R<sub>0</sub>× K<sub>t</sub>According to the above formula, during the first calibration stage, the first and second amplification factors G<sub>p</sub>And G<sub>n</sub>Can remain constant, while the third amplification factor Gt can fluctuate.
In one embodiment, the initially selected first and second amplification factors G<sub>p</sub>And G<sub>n</sub>When using the thermal current I<sub>h</sub>The third amplifier 230 may not have sufficient amplification range to adjust the wavelength of the electromagnetic beam to equalize or approximately equalize the desired wavelength. In these and other embodiments, the controller 250 is a combination of first, second, and third amplification factors Gp, Gn, Gt that results in the wavelength of the electromagnetic beam being equal to or approximately equal to the desired wavelength. Is determined, the first and second amplification factors Gp and Gn are adjusted to adjust the third amplification factor Gt toward the desired value.
After the initial calibration phase, the heat applied to the light modulator 260 by one or more devices near the light modulator 260 increases or decreases, resulting in a change in the temperature of the light modulator 260 from the desired temperature. .. The device near the light modulator 260 may be any device that has the primary function of warming the light modulator 260. Alternatively or additionally, such a device may generate heat during operation. In these and other embodiments, heat generation may be a by-product of the device's main operation rather than the device's main operation. For example, the device may be a processor, analog-to-digital converter, digital-to-analog converter, amplifier, or any other digital or analog device, or any combination of various devices that generate heat during operation. Good. The heat applied to the light modulator 260 affects the temperatures of the first and second power supplies 210 and 212, and the first and second currents I.<sub>p</sub>And I<sub>n</sub>To change.
After the temperature of the light modulator 260 has changed from the desired temperature, the system 200A may perform a second calibration step to return the temperature of the light modulator 260 to the desired temperature. In one embodiment, the second calibration step may be performed after the temperature has changed and stabilized at a temperature different from the desired temperature. In one embodiment, controller 250 determines to initiate a second calibration step based on the wavelength of the electromagnetic beam that is not equal to or approximately equal to the desired temperature due to temperature changes in the light modulator 260. You may.
In the second calibration stage, the controller 250 has a third amplification factor G.<sub>t</sub>The final third amplification factor G, which was determined during the first (first) calibration step.<sub>t</sub>May be maintained at the size of. The controller 250 has a first and second amplification factor G such that the wavelength of the electromagnetic beam is again equal to or approximately equal to the desired wavelength.<sub>p</sub>And G<sub>n</sub>May be adjusted.
The controller 250 is set to the first and second so that the additional temperature change to the light modulator 260 causes a change in the heat generated by the resistor element 240 to keep the temperature of the light modulator 260 at the desired temperature. Amplification rate G<sub>p</sub>And G<sub>n</sub>You may choose how to adjust for. For example, the first and second currents I due to temperature changes in the first and second current sources 210 and 212 caused by other equipment.<sub>p</sub>And I<sub>n</sub>The change in heat current I<sub>h</sub>1st and 2nd amplification factors G so as to change<sub>p</sub>And G<sub>n</sub>How to adjust for may be determined. The thermal current I is such that the heat generated by the resistor element 240 compensates for the thermal changes applied by other devices and maintains the temperature of the light modulator 260 at the desired temperature.<sub>h</sub>May fluctuate.
As mentioned above, the temperature T of the light modulator 260 after heat has been applied by another device is expressed as: T = (G).<sub>t</sub><sup>2</sup>× (G<sub>p</sub>I<sub>op</sub>+ G<sub>n</sub>I<sub>on</sub>)<sup>2</sup>× R<sub>0</sub>× K<sub>t</sub>) + ((G<sub>t</sub><sup>2</sup>× K<sub>t</sub>× (G<sub>p</sub>I<sub>op</sub>+ G<sub>n</sub>I<sub>on</sub>)) × ((G<sub>p</sub>I<sub>op</sub>+ G<sub>n</sub>I<sub>on</sub>) × K<sub>r</sub>) × ((G<sub>p</sub>K<sub>p</sub>+ G<sub>n</sub>K<sub>n</sub>) × R<sub>0</sub>)) During the second calibration stage of ΔT, the controller 250 determines the first and second amplification factors G so that the first-order term of ΔT becomes zero.<sub>p</sub>And G<sub>n</sub>May be formed to regulate. By setting the first-order term of ΔT to zero, the controller 250 may have the system 200A automatically compensate for further changes in temperature, as described above. For example, if the higher-order term of ΔT can be set to zero and the first-order term of ΔT can be set to zero for reasons that can be ignored, the formula for temperature T can be described by the following equation.
T = (G<sub>t</sub><sup>2</sup>× (G<sub>p</sub>I<sub>op</sub>+ G<sub>n</sub>I<sub>on</sub>)<sup>2</sup>× R<sub>0</sub>× K<sub>t</sub>As a result, the temperature T becomes independent of temperature changes and is equal to the formula for the desired temperature determined during the first calibration step. Therefore, in order to maintain the temperature of the light modulator 260 at the desired temperature, the controller 250 has a first and second amplification factor G determined during the first calibration step.<sub>p</sub>And G<sub>n</sub>First and second amplification factors G so as to maintain the relationship between<sub>p</sub>And G<sub>n</sub>You may choose how to adjust for. In particular, in the formula for the desired temperature of the light modulator 260 (G)<sub>p</sub>I<sub>op</sub>+ G<sub>n</sub>I<sub>on</sub>The controller 250 may maintain that relationship so that the term () remains constant.
During the second calibration stage (G<sub>p</sub>I<sub>op</sub>+ G<sub>n</sub>I<sub>on</sub>) Is kept constant, and the third amplification factor G<sub>t</sub>By not adjusting, the temperature after the second calibration step maintains the desired temperature. As a result, the wavelength of the electromagnetic beam is equal to or approximately equal to the desired wavelength. Further, the controller 250 has a first, second, and third amplification factor G.<sub>p</sub>, G<sub>n</sub>, G<sub>t</sub>Alternatively, without adjusting the other elements of the system 200A, the system 200A adjusts the heat generated by the resistor element 240 based on the change in heat applied by the other device, keeping the light modulator 260 at the desired temperature. It may be formed to continue.
In one embodiment, the first, second, and third amplification factors G selected during the first calibration step.<sub>p</sub>, G<sub>n</sub>, G<sub>t</sub>Is the second and third amplification factor G so that the first-order term of ΔT is zero.<sub>p</sub>And G<sub>n</sub>May not be allowed to adjust. In these and other embodiments, a different "final third amplification factor G<sub>t</sub>Different amplification factors G to select<sub>p</sub>And G<sub>n</sub>With, the first calibration step is performed again, after which the first and second amplification factors G<sub>p</sub>And G<sub>n</sub>A second calibration step may be followed to adjust.
In one embodiment, the controller 250 uses the method described above to calculate how to adjust the second and third amplification factors G.<sub>p</sub>And G<sub>t</sub>You may decide how to adjust for. Alternatively, the controller 250 monitors the wavelength information from the photodiode 252 while (G).<sub>p</sub>I<sub>op</sub>+ G<sub>n</sub>I<sub>on</sub>) Is kept constant, and the second and third amplification factors G<sub>p</sub>And G<sub>n</sub>2nd and 3rd amplification factor G by sweeping<sub>p</sub>And G<sub>n</sub>You may decide how to adjust for. If the wavelength information from the photodiode 252 indicates that the wavelength of the electromagnetic beam is the desired wavelength, then the second and third amplification factors G at that time.<sub>p</sub>And G<sub>n</sub>Is the second and third amplification factor G that makes the first-order term of ΔT zero.<sub>p</sub>And G<sub>n</sub>Is. Modifications, additions, deletions, etc. to the system 200A may be made without departing from the scope of disclosure of the present application.
FIG. 2B shows a specific example of another temperature control system 200B (referred to as "system 200B") formed by at least one embodiment described herein. System 200B is the system 200A and the fourth<u style="single">amplifier</u>232, a second resistance element 242, a second light modulator 262, and a second photodiode 254.
The fourth amplifier 232, the second resistance element 242, the second optical modulator 262, and the second photodiode 254 are the third amplifier 230, the resistance element 240, and the light modulator.<u style="single">260</u>, Each similar to the elements in system 200A of Figure 2A, such as photodiode 252.
The fourth amplifier 232 sets the fourth amplification factor to the third current I.<sub>sum</sub>And may be formed to generate a second thermal current provided to the second resistor element 242. The controller 250 has a third current I by the fourth amplifier 232.<sub>sum</sub>It may be formed to regulate the fourth amplification factor applied to. The second resistor element 242 may receive a thermal current to generate the heat used to heat the second light modulator 262. During the first calibration stage, the controller 250 a fourth amplification is based on wavelength information about the wavelength of the electromagnetic beam output from the second light modulator 262 (wavelength information from the second diode 254). It may be formed to regulate the rate. During the second calibration stage, the controller 250 utilizes wavelength information from either the photodiode 252 or the photodiode 254, or a mathematical formula based on the photodiode 252 or another photodiode 254. The first and second amplification factors may be adjusted.
FIG. 3 shows a flowchart of an example method of adjusting the temperature of a device according to at least one embodiment described herein. In one embodiment, method 300 may be performed by a temperature control system such as the temperature control systems 100, 200A, 200B, 410 shown in FIGS. 1, 2A, 2B, and 4. Although indicated by multiple individual blocks, depending on the desired embodiment, the individual blocks may be subdivided into further blocks, or the blocks may be merged into a smaller number of blocks. Alternatively, one or more blocks may be omitted.
Method 300 begins at block 302, where the first and second amplification factors are selected. The first and second amplification factors are the amplification factors applied to the first and second currents generated by the two temperature-dependent current sources, respectively. The first and second amplification factors may be randomly selected or may be based on past amplification factors used by the temperature control system performing method 300. The first and second amplification factors are applied to the first and second currents to generate the first and second intermediate currents.
At block 304, the third amplification factor is adjusted. The third amplification factor is the amplification factor applied to the sum of the first and second intermediate currents. The amplified sum of the first and second intermediate currents is used to generate heat to regulate the temperature of the device, producing an output of values that depend on the temperature of the device.
At block 306, it is determined whether the output of the device is equal to or approximately equal to a particular value. The particular value may be the desired value for the output of the device. If the output of the device is equal to or approximately equal to the desired value, method 300 proceeds to block 308. If the output of the device is not equal to or approximately equal to the desired value, method 300 returns to block 304.
At block 308, it is determined whether the temperature of the device has changed. In one embodiment, it may be determined whether the temperature of the device fluctuates and is stable. In one embodiment, it may be determined whether or not the temperature of the device has changed based on the change in the output value of the device. If the device temperature has changed, method 300 proceeds to block 310. If the device temperature has not changed, method 300 returns to block 308.
In block 310, the first and second amplification factors are adjusted. In one embodiment, the first and second amplification factors are based on the relationship between the first and second amplification factors selected in block 302 and the first and second currents to which the first and second amplification factors are applied. The second amplification factor may be adjusted.
Those skilled in the art will recognize that with respect to the above and other processes and methods disclosed herein, the functions performed by the processes and methods may be performed in a different order. The steps and processes described are given by way of example only, and some of the steps and processes may be selective or more without departing from the essence of the disclosed embodiments. It may be integrated into a small number of steps and processes, or extended to add steps and processes.
For example, method 300 may further include determining whether the first and second amplification factors are adjusted so that the output of the device is equal to or approximately equal to a particular value. If the first and second amplification factors are not adjusted so that the output of the device is equal to or approximately equal to a particular value, Method 300 may restart block 302.
FIG. 4 shows a silicon die 400 responsible for a temperature control system formed according to at least one embodiment described herein. The silicon die 400 includes a first device 420 and a second device 430 formed on the silicon die. The first device 420 may be a device formed to produce an output having a temperature dependent value. The second device 430 may be a device that performs operations related to the operation of the system including the silicon die 400. The second device 430 may generate heat during its operation that affects the temperature of the first device 420.
The temperature control system 410 is formed to adjust the temperature of the first device 420 to a desired temperature so that the output of the first device 420 is equal to or approximately equal to a particular value. May be, for example, the desired value for the operation of the system including the silicon die 400. The temperature control system 410 may adjust the temperature of the first device 420 to a desired temperature during the first calibration step by adjusting the settings in the system (eg, the amplification factor setting). After a period of time during which the operation of the second device 430 affects the temperature of the first device 420, the temperature control system 410 adjusts the settings in the system (eg, the amplification factor settings) to create a second device. The temperature may be adjusted to the desired temperature during the calibration step. The temperature control system 410 automatically compensates for further temperature changes in the first device 420 due to changes in the second device 430 after the second calibration stage, without adjusting the settings in the system. It may be formed so as to.
In one embodiment, the function of the temperature control system 410 may be executed or controlled by the processor 412 and the memory 414 included in the temperature control system 410. Processor 412 may include, for example, a microprocessor, a microcontroller, a digital signal processor (DSP), an application specific integrated circuit (ASIC), a field programmable gate array (FPGA), or interpret and interpret program instructions. It may include any other digital or analog circuit that is formed to / or execute and / or process the data. In one embodiment, processor 412 interprets and / or executes program instructions and / or processes data stored in associated memory. Although FIG. 1 shows a single processor 412, the temperature control system 410 may include multiple processors 412.
Memory 414 may include any suitable computer-readable medium (a medium that can be read by a computer) that is formed to hold program instructions and / or data over a period of time. As a non-limiting embodiment, such computer-readable media include tangible and / or non-temporary computer-readable storage media, such as semiconductor memory devices, random access memory (RAM), read-only memory (ROM). , Electrically erasable programmable read-only memory (EEPROM), compact disk read-only memory (CD-ROM) or other optical disk storage, magnetic disk storage or other magnetic storage device, flash memory device (eg, solid state) Memory devices), or any other storage medium used to carry or store the desired program code in the form of computer-executable instructions or data structures and accessed by processor 412. But it may be. Combinations of those listed above are also included in the scope of computer-readable media. Instructions that can be executed by a computer include, for example, instructions and data that cause a general purpose computer, a special purpose computer, or a special purpose processing unit (eg, a processor 412) to execute a predetermined function or group of functions.
Modifications, additions, omissions, etc. to the silicon die 400 may be made without departing from the scope of disclosure of the present application. For example, in one embodiment, the silicon die 400 may include a plurality of other devices that generate heat as a by-product (or result) of the intended operation. As another example, the temperature control system 410 does not include the processor 412 and the memory 414, and the functions of the temperature control system 410 may be realized by analog circuits. Alternatively or additionally, the function of the temperature control system 410 may be performed utilizing a combination of analog and digital circuits and / or other hardware. For example, the hardware may include application specific integrated circuits (ASICs) or field programmable gate arrays (FPGAs) that are formed to execute instructions to perform the functionality of the temperature control system 410.
FIG. 5 shows a flowchart of another device temperature control method example performed by at least one embodiment disclosed in the present application. In one embodiment, method 500 may be performed by a temperature control system such as the temperature control systems 100, 200A, 200B, 410 shown in FIGS. 1, 2A, 2B, 4 respectively. Although indicated by multiple individual blocks, depending on the desired embodiment, the individual blocks may be subdivided into further blocks, or the blocks may be merged into a smaller number of blocks. Alternatively, one or more blocks may be omitted.
Method 500 begins at block 502, where block 502 applies a first amplification factor to a first current provided by a temperature-dependent first current source to generate a first intermediate current. In one embodiment, the first current source may exhibit a temperature dependence such that the first current changes according to a substantially positive proportional coefficient to the temperature change.
In block 504, a second amplification factor is applied to the second current provided by the second temperature-dependent current source to generate a second intermediate current. In one embodiment, the second current source may exhibit temperature dependence such that the second current changes according to a substantially negative proportionality factor with respect to temperature changes.
At block 506, heat is generated using a heater based on the first and second intermediate currents. The heat generated is for adjusting the temperature of the first device to the initial temperature.
In block 508, after additional heat is applied to the first device by at least one second device, the first and second due to the temperature change of the first and second current sources due to the additional heat. The first and second amplification factors are adjusted so that the change in the second current becomes a change in the heat generated by the heater to approximately maintain the initial temperature of the device.
In one embodiment, method 500 further steps to adjust the first and second amplification factors based on the output of the first device before additional heat is applied to the first device. It may be included. In these and other embodiments, the first and second amplification factors are such that the heat generated by the heater is regulated until the first device produces output at a particular value. It may be adjusted. If the heat generated by the heater results in the first device being at the initial temperature, the first device produces an output at a particular value.
In one embodiment, method 500 is a first and second device that approximately maintains the initial temperature of the device after additional heat has been applied to the first device by at least one second device. A step of calculating the adjustment amount for adjusting the amplification factor may be further included. Based on maintaining the relationship between the first and second amplification factors established before additional heat is applied to the first device by at least the second device in these and other embodiments. , The adjustment amount of the first and second amplification factors may be calculated.
The above contents have been explained in terms specialized in structural features and / or methodical processing, but the subject described by the present application is not necessarily limited to the specific features and processing described above. Should be understood. Rather, the above-mentioned specific features and treatments described are merely disclosed as specific examples of embodiments according to the present application.
All specific examples and terms with conditions appearing in the present application are interpreted from a teaching point of view to encourage the reader to understand the contents of the explanations in the present application and the concepts in which the inventors have contributed to technological progress. Should be. Although embodiments according to the present application have been described in detail, it should be understood that various modifications, various substitutions and various substitutions, etc. may be made without departing from the scope and spirit of the disclosure.
100 System 110 First current source 112 Second current source 120 First amplifier 122 Second amplifier 130 Third amplifier 140 Heater 150 Controller 152 Sensor 160 Device
6 sheets
Sheet 1 Sheet 2 Sheet 3 Sheet 4 Sheet 5 Sheet 6
Every citation, both ways
| Document | Relation | Office |
|---|---|---|
| JP20113781A | Cites | Japan |
| JP2004221267A | Cites | Japan |
| JP2005260001A | Cites | Japan |
| WO2007102236A1 | Cites | World Intellectual Property Organization (WIPO) |
| JP2002246687A | Cites | Japan |
| JP2012209501A | Cites | Japan |
| US6965622B1 | Cites | United States of America |
| US4507546A | Cites | United States of America |
| WO2014044047A1 | Cites | World Intellectual Property Organization (WIPO) |
4 members in 2 offices
Priority claims5
| Document | Office | Kind | Date |
|---|---|---|---|
| 14251184 | United States of America | – | |
| 201414251184 | United States of America | A | |
| 201414251184 | United States of America | A | |
| 14251184 | – | – | – |
| US201414251184 | – | – | – |
Members4
| Document | Office | Kind | |
|---|---|---|---|
| US2015293542A1 | United States of America | A1 | |
| JP2015204106A | Japan | A | |
| US9703300B2 | United States of America | B2 | |
| JP6582425B2This record | Japan | B2 |
11 legal events, as the office reported them to INPADOC
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Numbers
- Publication
- 6582425
- Publication, DOCDB
- 6582425
- Publication, EPODOC
- JP6582425B
- Application
- 16796
- Application, DOCDB
- 2015016796
- Application, EPODOC
- JP20150016796
Titles2
- Japanese
- 温度調節システム及び温度調節方法
- English
- Temperature control system and temperature control method
Classification
- CPC, 2
- G05D23/1919
- G05D23/27
- IPC, 3
- G05D23 19
- G05F1 567
- H01S5 0687
