Electronic device

The present disclosure relates to an electronic device, and is applicable to, for example, an electronic device including a power semiconductor device incorporating a temperature detection diode.

The temperature of the semiconductor chip is measured by utilizing the temperature dependence of the forward voltage (VF) of the diode provided in the semiconductor chip. Prior art documents related to the present disclosure include, for example, Japanese Patent Application Laid-Open No. 5-40533.

<p><patcit num="1"><text>Japanese Unexamined Patent Publication No. 5-40533</text></patcit></p>

<p> The VF of the temperature detection diode varies widely, and the accuracy of temperature measurement in a wide temperature range decreases. Other challenges and novel features will become apparent from the description and accompanying drawings herein.</p>

<p> A brief outline of the representative ones of the present disclosure is as follows. That is, the electronic device includes a power semiconductor device, a first semiconductor integrated circuit device that drives the power semiconductor device, and a second semiconductor integrated circuit device that controls the first semiconductor integrated circuit device. Be prepared. The power semiconductor device includes a switching transistor and a temperature detection diode. The first semiconductor integrated circuit device includes a drive circuit for driving the switching transistor and a detection circuit for detecting VF from the temperature detection diode. The second semiconductor integrated circuit device includes a control unit that controls the drive circuit, an outside air temperature acquisition unit that acquires outside air temperature information, temperature characteristic data of the temperature detection diode, and the detection circuit at the first temperature. A storage device that stores a first value based on a signal from, a third value based on a signal from the detection circuit, the temperature characteristic data, and the first temperature acquired by the outside air temperature acquisition unit. It includes a temperature calculation processing unit that calculates the temperature of the power semiconductor device from the first value.</p>

<p> According to the above electronic device, it is possible to reduce a decrease in accuracy of temperature measurement in a wide temperature range.</p>

<figref num="1">It is a figure for demonstrating the variation of VF of a temperature detection diode.</figref><figref num="2">It is a block diagram for demonstrating the electronic device which concerns on embodiment.</figref><figref num="3">It is a block diagram for demonstrating the electronic device which concerns on Example 1. FIG.</figref><figref num="4">It is a block diagram for demonstrating the control circuit which concerns on Example 1. FIG.</figref><figref num="5">It is a figure for demonstrating the manufacturing method of the electronic device which concerns on Example 1. FIG.</figref><figref num="6">It is a figure for demonstrating the temperature-related calculation part processing which concerns on Example 1. FIG.</figref><figref num="7">It is a flowchart for demonstrating the temperature-related calculation part processing which concerns on Example 1. FIG.</figref><figref num="8">It is a block diagram for demonstrating the control circuit which concerns on Example 1. FIG.</figref><figref num="9">It is a block diagram for demonstrating the control circuit which concerns on Example 1. FIG.</figref><figref num="10">It is a block diagram for demonstrating the electronic device which concerns on Example 2. FIG.</figref><figref num="11">It is a block diagram for demonstrating the control circuit which concerns on Example 2. FIG.</figref><figref num="12">It is a flowchart for demonstrating the temperature-related calculation part processing which concerns on Example 2.</figref><figref num="13">It is a flowchart for demonstrating the temperature-related calculation part processing which concerns on Example 2.</figref><figref num="14">It is a block diagram for demonstrating the electronic device which concerns on Example 3. FIG.</figref><figref num="15">It is a block diagram for demonstrating the control circuit which concerns on Example 3. FIG.</figref><figref num="16">It is a flowchart for demonstrating the temperature-related calculation part processing which concerns on Example 3.</figref><figref num="17">It is a block diagram for demonstrating the application example of the electronic device which concerns on Examples 1 to 3.</figref><figref num="18">It is a figure for demonstrating the isolator of the electronic device which concerns on Examples 1 to 3.</figref><figref num="19">It is a figure which shows the structure of a power module.</figref><figref num="20">It is a block diagram for demonstrating the electronic device which concerns on Example 4. FIG.</figref><figref num="21">It is a figure which shows the structure of the power module which concerns on Example 4. FIG.</figref><figref num="22">It is a figure for demonstrating the ID reading apparatus which concerns on Example 4. FIG.</figref><figref num="23">It is a flowchart for demonstrating the reading of the temperature characteristic data of the ID circuit which concerns on Example 4. FIG.</figref><figref num="24">It is a flowchart for demonstrating the temperature-related calculation part processing which concerns on Example 4.</figref><figref num="25">It is a block diagram for demonstrating the electronic device which concerns on Example 5. FIG.</figref><figref num="26">It is a figure which shows the structure of the power module which concerns on Example 5.</figref><figref num="27">It is a figure which shows the ID reading apparatus which concerns on Example 5.</figref><figref num="28">It is a flowchart for demonstrating the reading of the ID code which concerns on Example 5.</figref><figref num="29">It is a flowchart for demonstrating the temperature-related calculation part processing which concerns on Example 5.</figref><figref num="30">It is a block diagram for demonstrating the electronic device which concerns on Example 6.</figref><figref num="31">It is a flowchart for demonstrating the reading of the ID code which concerns on Example 6.</figref><figref num="32">It is a block diagram for demonstrating the electronic device which concerns on Example 7. FIG.</figref><figref num="33">It is a figure which shows the structure of the IGBT which concerns on Example 7.</figref><figref num="34">It is a flowchart for demonstrating the temperature-related calculation part processing which concerns on Example 7.</figref><figref num="35">It is a block diagram for demonstrating the electronic device which concerns on Example 8.</figref><figref num="36">It is a block diagram which shows the connection example of the driver IC and the IGBT which concerns on Example 8.</figref><figref num="37">It is a timing diagram of serial communication in the configuration of FIG. 36.</figref><figref num="38">It is a flowchart for demonstrating the temperature-related calculation part processing which concerns on Example 8.</figref>

Hereinafter, embodiments and examples will be described with reference to the drawings. However, in the following description, the same components may be designated by the same reference numerals and repeated description may be omitted.

The motor is used as a power source for a hybrid electric vehicle (HEV) or an electric vehicle (EV) combined with an internal combustion engine (gasoline engine). When driving an electric motor, a power converter (inverter) that performs DC-AC conversion is used to obtain a predetermined torque and power supply frequency. The operating temperature of the inverter fluctuates greatly depending on the driving environment of the automobile, and especially in HEVs equipped with an inverter in the engine room, the temperature of the inverter becomes high due to the influence of heat generated by the engine. In addition to such ambient temperature, the temperature of a switching element in an inverter (for example, a power semiconductor device) rises due to the effects of steady loss due to the flow of the current of the power semiconductor device element itself and switching loss due to on / off. However, if the temperature exceeds a certain level, it may be destroyed. In addition to the power semiconductor device, a drive circuit for driving the power semiconductor device and a control circuit for controlling the drive circuit are used in the inverter. In addition to the gate drive circuit that drives the power semiconductor device, the drive circuit has overcurrent protection and overheat protection functions to protect the power semiconductor device from destruction due to high temperature or the like. For example, a power semiconductor device has a built-in diode for temperature detection, and a current is passed from a current source in the drive circuit, and the current-temperature characteristic of the diode (when the temperature rises, the forward voltage (VF) for the same current value ) Is lowered, and whether or not the temperature of the chip of the power semiconductor device is equal to or higher than the temperature corresponding to the reference voltage is determined by the comparator in the drive circuit. When the detection temperature by the diode exceeds the set value, an alarm signal is output to the control circuit and a signal is also output to the gate drive circuit to forcibly shut off the power semiconductor device. When an alarm signal is output, the control circuit also forcibly stops the device.

The power semiconductor device is, for example, an insulated gate bipolar transistor (IGBT), and includes a switching element and a temperature detection diode on one semiconductor substrate. The variation in VF of the temperature detection diode will be described with reference to FIG. FIG. 1 is a diagram showing the relationship (temperature characteristics) between the VF of the temperature detection diode and the temperature. Figure 1 shows the temperature characteristics (relationship between temperature (° C) and VF (V) of the temperature detection diode when a bias current of 200 μA is applied) when two stages of temperature detection diodes are connected in series. There is. As shown in Fig. 1, the VF of the temperature detection diode of the IGBT has a variation of ± 6% at room temperature (25 ° C), and a variation of ± 20% or more at 175 ° C when the temperature coefficient is added. Become. The dashed line A is a typical value, and the solid lines B and C are straight lines parallel to the dashed line A (with the same temperature coefficient as the typical value) with respect to the upper and lower limits of the ± 6% variation at 25 ° C. is there. The solid lines D and C are straight lines connecting the upper and lower limits of ± 6% variation at 25 ° C and the upper and lower limits of ± 20% variation at 175 ° C, respectively. It shows that the variation of the temperature coefficient becomes large. Normally, the temperature abnormality detection setting is calculated based on the variation tolerance of the IGBT, so that there is a problem of narrowing the allowable operating temperature of the IGBT. Therefore, in order to correct the variation in the characteristics of the IGBT at the time of shipping inspection of the board on which the IGBT, the drive circuit, and the control circuit are mounted, adjustment man-hours such as changing the circuit constant of the detection circuit of the VF are required.

&lt;Embodiment&gt; Next, the electronic device according to the embodiment will be described with reference to FIG. FIG. 2 is a block diagram of the electronic device according to the embodiment. The electronic device 1 according to the embodiment includes a power semiconductor device 10, a first semiconductor integrated circuit device 20, and a second semiconductor integrated circuit device 30. The power semiconductor device 10 includes a switching element 11 and a temperature detection diode 12. The first semiconductor integrated circuit device 20 includes a drive circuit 21 for driving the switching element 11 and a detection circuit 22 for detecting the VF of the temperature detection diode 12. Second semiconductor integrated circuit device 30<u style="single">Is</u>From the control unit CC that controls the drive circuit 21, the outside air temperature acquisition unit TA that acquires outside air temperature information, and the temperature characteristics (K) of the temperature detection diode 12 and the detection circuit 22 at the first temperature (A). A storage device 33 that stores the first value (VF (A)) based on the signal, a third value (VF (N)) based on the signal from the detection circuit 22, temperature characteristics (K), and outside air temperature. It includes a temperature calculation processing unit TC that calculates the temperature (N) of the power semiconductor device 10 from the first temperature (A) and the first value (VF (N)) acquired by the acquisition unit TA. Since the temperature of the power semiconductor device is calculated using the temperature characteristic (K) of the power semiconductor device, the temperature measurement accuracy can be improved. As a result, it is not necessary to set the operating tolerance of the power semiconductor device based on the variation tolerance of VF, for example, to set a low abnormality detection temperature and determine the corresponding reference voltage, and to expand the operating tolerance and optimize the thermal margin. (Chip size reduction) can be performed.

<p> First, the configuration of the electronic device according to the first embodiment of the embodiment will be described with reference to FIG. FIG. 3 is a block diagram showing the configuration of the electronic device according to the first embodiment. The electronic device 1A according to the first embodiment includes an IGBT 10A which is a semiconductor device for power, a driver IC 20A which is a first semiconductor integrated circuit device, and a control circuit 30A which is a second semiconductor integrated circuit device. The IGBT 10 has a switching element 11 and a temperature detection diode 12 formed on one semiconductor substrate. The driver IC 20 connects the GATE CIRCUIT 21, which is the drive circuit of the switching element 11, to the temperature detection A / D converter 22 and the temperature detection diode 12, which are the VF detection circuits of the temperature detection diode 12. A semiconductor substrate is provided with a current bias circuit (CURRENT BIAS) 23 that supplies a bias current. The gate circuit 21 generates a drive signal (DRV) that drives the gate electrode to turn on / off the switching element 11 based on the PWM (Pulse Width Modulation) signal from the control circuit 30. A resistor 41 is provided between the gate circuit 21 and the switching element 11. The temperature detection A / D converter 22 includes a comparator 231 and a triangular wave generation circuit 232. A capacitor 42 and a resistance group 43 are externally attached to the triangular wave generation circuit 232. The resistance group 43 generates a reference voltage for generating a triangular wave. The chip temperature of the IGBT 10A is measured by using the forward voltage of the temperature detection diode 12 in the IGBT 10A. A constant current (IF) is passed from the current bias circuit 23 of the driver IC 20A to the temperature detection diode 12, and the comparator 221 controls the PWM temperature sense output signal (TSP) by comparing the VF with the triangle wave signal from the triangle wave generation circuit 222. By transmitting to the circuit 30 via the isolator 24, the temperature can be measured from the PWM duty ratio. The isolator 24 transmits a signal by porcelain coupling by insulating an on-chip transformer formed by wiring with an interlayer film. The control circuit 30A is an interface between the CPU 31, the PWM circuit (PWM CIRCUIT) 32, the storage device (MEMORY) 33, and an external device. I / O interface (I / O IF) 34 and A / D converter (ADC). ) 35 and external PC (Personal) A PC interface (PC IF), which is an interface unit with a computer), is provided on one semiconductor substrate, and is composed of, for example, a microcomputer unit (MCU). The storage device 33 is preferably configured with an electrically rewritable non-volatile memory such as a flash memory. Further, the program executed by the CPU 31 is preferably stored in an electrically rewritable non-volatile memory such as a flash memory, and may be stored in the storage device 33.</p><p> The control circuit 30A will be described with reference to FIG. FIG. 4 is a block diagram showing the functions of the control circuit according to the first embodiment. The control circuit 30A includes an outside air temperature switching unit 311, a temperature calculation processing unit 314, and a drive PWM control unit 318. The block shown by the broken line is a software process (a process in which the CPU 31 executes a program), but the block is not limited thereto, and may be composed of, for example, a hard wafer. The outside air temperature switching unit 311 is composed of an averaging processing unit 312 and a selection unit 313. The output of the outside air temperature detector 44, which is a temperature sensor such as a thermistor, is converted by the A / D converter 35, the input signal is sampled by the averaging processing unit 312, and the signals obtained by averaging multiple minutes to remove noise, or from the PC45. The temperature setting value of the ambient temperature input via the PC interface 36 is selected by the selection unit 313. As will be described later, either the PC45 sets the temperature of the space where the environmental temperature of the electronic device 1A such as a constant temperature bath can be set, or the PC45 acquires the temperature setting value, so that the PC45 controls the environmental temperature setting value of the control circuit 30A. Can be entered in. Since the environmental temperature may be detected by either the outside air temperature detector 44 or the PC 45, either one is not necessary. In this case, the selection unit 313 of the outside air temperature switching unit 311 may be omitted, and when the environmental temperature is detected by the PC 45, the averaging processing unit 312 may not be provided. The temperature calculation processing unit 314 is composed of a temperature coefficient calculation unit 315, a temperature value conversion unit 316, and a temperature correction unit 317. The temperature information output of the selection unit 313 and the voltage information of the temperature detection diode obtained by converting the output of the temperature detection A / D converter 22 by the temperature value conversion unit 316 are input to the temperature coefficient calculation unit 315. Stores the temperature coefficient calculated by the temperature coefficient calculation unit 315, the temperature information that is the output of the selection unit 313, and the voltage information of the temperature detection diode that converts the output of the temperature detection A / D converter 22 by the temperature value conversion unit 316. Store in device 33. The temperature compensation unit 317 converts the voltage information of the temperature detection diode converted by the temperature value conversion unit 316 into the temperature information used by the drive PWM control unit 318 based on the information stored in the storage device 33. The program executed by the CPU 31 may be stored in the non-volatile memory of the control circuit 30A by any of the following. (1) At the time of wafer production of the control circuit 30A, which is the second semiconductor integrated circuit device (2) After being enclosed in the package of the control circuit 30A and before being mounted on the printed circuit board of the electronic device 1A (3) Printing of the electronic device 1A After mounting on the board (stored from PC45 via PC interface 36) The method of acquiring the temperature characteristic data of the temperature detection diode 12, which is one step of the manufacturing method of the electronic device 1A, will be described with reference to FIGS. 5 to 7. FIG. 5 is a diagram for explaining a manufacturing method of the electronic device according to the first embodiment. FIG. 6 is a diagram for calculating the temperature coefficient by the temperature-related calculation unit processing according to the first embodiment. FIG. 7 is a flowchart for obtaining the temperature coefficient in the temperature-related calculation unit processing unit according to the first embodiment. The process of storing the temperature characteristic data of the temperature detection diode shown in FIG. 5 in the electronic device is performed in a test process or the like in the manufacturing process of the electronic device. Prepare an electronic device 1A equipped with an IGBT 10A, a driver IC 20A, and a control circuit 30A (step S10). Bring the electronic device 1A into a space where the environmental temperature can be set, such as a constant temperature bath, and connect the outside air temperature detector 44 and PC45. Acquire the temperature characteristics of the temperature detection diode 12 by the method described later (step S20). Remove the outside air temperature detector 44 and PC45 from the electronic device 1A, and carry them out from the space where the environmental temperature can be set. As shown in FIG. 6, the temperature coefficient is calculated from the VF measurement value (VF (A)) at the first temperature (A) and the VF measurement value (VF (H)) at the second temperature (H). The first temperature (A) is, for example, room temperature (25 ° C), and the second temperature (H) is high temperature (100 ° C). As shown in FIG. 7, the IGBT 10 is first turned off (step S21). By turning off the IGBT 10, the chip temperature of the IGBT 10 becomes equivalent to the environmental temperature. Next, the environmental temperature is set to room temperature, which is the first temperature (A) (step S22). The environmental temperature is input from the outside air temperature detector 44 or PC45. Next, the temperature value converter 316 calculates the VF based on the signal from the temperature detection A / D converter 22, which is the temperature information of the IGBT 10A (temperature detection diode 12) whose ambient temperature is the first temperature. This is stored in the storage device 33 as the first value (VF (A)) (step S23). Next, the environmental temperature is set to a high temperature, which is the second temperature (H) (step S24). The environmental temperature is input from the outside air temperature detector 44 or PC45. Next, the temperature value converter 316 calculates the VF based on the signal from the temperature detection A / D converter 22 which is the temperature information of the IGBT 10A (temperature detection diode 12) whose ambient temperature is the second temperature. This is stored in the storage device 33 as the second value (VF (H)) (step S25). The temperature coefficient (K) of the temperature detection diode 12 is calculated by the following equation (1) and stored in the storage device 33 (step S26). K = (VF (H) -VF (A)) / (HA) [mV / ° C] (1) Next, the operation of the electronic device during normal operation will be explained using FIGS. 8 and 9. To do. The outside air temperature detector 44 and PC45 are required when calculating the temperature coefficient, but are not required during normal operation. FIG. 8 is a block diagram mainly showing the function of the temperature compensation unit in the control circuit according to the first embodiment. FIG. 9 is a block diagram showing mainly the functions of the PWM control unit in the control circuit according to the first embodiment. FIG. 8 shows a method for measuring the temperature of the electronic device 1A during normal operation. The temperature value converter 316 calculates the VF based on the signal from the temperature detection A / D converter 22 which is the temperature information of the IGBT 10A (temperature detection diode 12), and calculates this as the third value (VF (N)). ). The temperature compensator 317 sets the third value (VF (N)), the temperature coefficient (K) stored in the storage device 33, the first temperature (A), and the first value (VF (A)). Using the following formula (2), the measured temperature (N) of IGBT 10A is calculated. N = (VF (N) -VF (A)) / K + A [° C] (2) As shown in Fig. 9, the drive PWM control unit 318 is the drive signal (DRV) of the switching element 11. The PWM circuit 32 is controlled so as to generate a PWM signal. Further, the drive PWM control unit 318 controls the PWM circuit 32 so as to suppress the driving of the switching element 11 when the temperature approaches a predetermined temperature according to the measurement temperature result of the IGBT 10A obtained by the temperature calculation processing unit 314. Or, when the temperature exceeds a predetermined temperature, it is determined that the state is abnormal, and the PWM circuit 32 is controlled so as to turn off the drive of the switching element 11 to protect the IGBT 10A.</p><p> According to the first embodiment, since the temperature characteristics of the temperature detection diode can be acquired including the characteristics of the entire electronic device such as the temperature detection A / D converter, accurate temperature measurement becomes possible. This makes it possible to protect the IGBT at an appropriate temperature.</p>

<p> The configuration of the electronic device according to the second embodiment will be described with reference to FIG. FIG. 10 is a block diagram for explaining the electronic device according to the second embodiment. The electronic device 1B according to the second embodiment includes an IGBT 10B which is a semiconductor device for power, a driver IC 20B which is a first semiconductor integrated circuit device, and a control circuit 30B which is a second semiconductor integrated circuit device. The IGBT 10B includes an ID circuit (ID CIRCUIT) 13B that stores a chip-specific ID code. Other configurations are the same as the IGBT 10A. The ID circuit 13B is composed of a ladder resistor, an electric fuse, and the like. The driver IC 20B includes an ID reading circuit 25B that reads the ID code of the ID circuit 13B. Other configurations are the same as the driver IC20A. The ID read circuit 25B converts the voltage value from the ID circuit 13B into a PWM signal (digital serial signal) in the same manner as the temperature detection A / D converter 22. Isolator 24B is similar to isolator 24, but with an increased number of isolators. The control circuit 30B includes an I / O interface 34B and an ID recognition unit 319. Other configurations are the same as those of the control circuit 30A. The ID recognition unit 319 recognizes the ID code based on the signal from the ID reading circuit 25B. In the wafer test during wafer manufacturing of IGBT10B, normal temperature and high temperature tests were performed, and the characteristic data (VF (A), VF (H), K) of IGBT10B obtained at that time was used as a wafer measurement data library together with the ID code. Store in the external storage device 46. The ID code is set by cutting the electric fuse of the ID circuit 13B of the IGBT 10B during the wafer test.</p><p> The control circuit 30B will be described with reference to FIG. FIG. 11 is a block diagram showing the functions of the control circuit according to the second embodiment. In the control circuit 30B according to the second embodiment, the temperature characteristic input from the PC interface 36 is used by the temperature coefficient calculation unit 315B, and the ID recognition that recognizes the ID code by reading the ID code via the I / O interface 34B. It is the same as the control circuit 30A except that the part 319 is added. The block shown by the broken line is a software process (a process in which the CPU 31 executes a program), but the present invention is not limited to this, and may be hardware, for example. The temperature calculation processing unit 314B is composed of a temperature coefficient calculation unit 315B, a temperature value conversion unit 316, and a temperature correction unit 317. The temperature information that is the output of the selection unit 313, the voltage information of the temperature detection diode 12 that converted the output of the temperature detection A / D converter 22 by the temperature value conversion unit 316, and the wafer measurement data library of the PC45 are stored. The temperature coefficient (K) corresponding to the ID code acquired by the ID recognition unit 319 from the external storage device (STORAGE) 46 is input to the temperature coefficient calculation unit 315B. The temperature coefficient (K) input to the temperature coefficient calculation unit 315B, the temperature information output from the selection unit 313, and the temperature detection diode 12 obtained by converting the output of the temperature detection A / D converter 22 with the temperature value conversion unit 316. The voltage information of is stored in the storage device 33.</p><p> A method of acquiring temperature characteristic data of the temperature detection diode 12, which is one step of the manufacturing method of the electronic device 1B according to the second embodiment, will be described with reference to FIGS. 12 and 13. FIG. 12 is a flowchart for explaining the temperature-related calculation unit processing according to the second embodiment. FIG. 13 is a flowchart for explaining the temperature-related calculation unit processing according to the second embodiment. The manufacturing method of the electronic device 1B is the same as that of the first embodiment except for step S20. The process corresponding to step 20 will be described below. First, read the ID code of the IGBT 10B (step S27). Next, the temperature coefficient (K) is acquired from the external storage device 46 in which the wafer measurement data library is stored by the ID code, and stored in the storage device 33 (step S28). Next, the IGBT 10B is turned off (step S21). Next, the environmental temperature is set to room temperature, which is the first temperature (A) (step S22). The measurement temperature is input from the outside air temperature detector 44 or PC45. Next, the temperature value converter 316 calculates the VF based on the signal from the temperature detection A / D converter 22 which is the temperature information of the IGBT 10B (temperature detection diode 12) whose ambient temperature is the first temperature. This is stored in the storage device 33 as the first value (VF (A)) (step S23). Note that steps S27 and S28 and steps S21 to S23 may be interchanged.</p><p> A case of improving the adjustment accuracy including the driver IC20B will be described with reference to FIG. First, read the ID code of the IGBT 10B (step S27). Next, the first value (VF (A)), the second value (VF (H)), and the temperature coefficient (K) are obtained from the external storage device 46 in which the wafer measurement data library is stored by the ID code. , Store in storage 33 (step S28B). Next, the IGBT 10B is turned off (step S21). Next, the environmental temperature is set to room temperature, which is the first temperature (A) (step S22). The environmental temperature is input from the outside air temperature detector 44 or PC45. Next, the temperature value converter 316 calculates the VF based on the signal from the temperature detection A / D converter 22 which is the temperature information of the IGBT 10B (temperature detection diode 12) when the ambient temperature is the first temperature. Let this be the fourth value (VF (A)') (step S23B). Next, the fourth value (VF (A)') is compared with the first value (VF (A)) of the wafer measurement data library (step S29). Next, it is determined whether or not the difference between the fourth value (VF (A)') and the first value (VF (A)) is equal to or greater than a predetermined value (step S30). If the difference is greater than or equal to a predetermined value (Yes in step S30), a temperature offset of room temperature A ° C is performed (step S31). The room temperature is offset so that the temperature N obtained by substituting VF (A)'for VF (N) in the equation (2) becomes a new room temperature A'. The offset value is the difference between A'and A. Note that steps S27 and S28B and steps S21 to S23B may be interchanged. Further, in this embodiment, the temperature coefficient (K) and the like are acquired from the wafer measurement data library stored in the external storage device 46 in step S28 or step S28B and stored in the storage device 33, but before step S27. The temperature coefficient (K) and the like corresponding to the plurality of ID codes may be stored in the storage device 33 in advance.</p><p> The operation of the electronic device 1B during normal operation is the same as that of the electronic device 1A. The temperature value converter 316 calculates the VF based on the signal from the temperature detection A / D converter 22 which is the temperature information of the IGBT 10B (temperature detection diode 12), and calculates this as the third value (VF (N)). ). The temperature compensator 317 sets the third value (VF (N)), the temperature coefficient (K) stored in the storage device 33, the first temperature (A), and the first value (VF (A)). Using the above equation (2), the measured temperature (N) of IGBT 10B is calculated. The drive PWM control unit 318 controls the PWM circuit 32 so as to generate a PWM signal which is a drive signal (DRV) of the switching element 11. Further, the drive PWM control unit 318 controls the PWM circuit 32 so as to suppress the driving of the switching element 11 when the temperature approaches a predetermined temperature according to the measurement temperature result of the IGBT 10B obtained by the temperature calculation processing unit 314B. Or, when the temperature exceeds a predetermined temperature, it is determined that the state is abnormal, and the PWM circuit 32 is controlled so as to turn off the drive of the switching element 11 to protect the IGBT 10B. According to the second embodiment, it is not necessary to change the environmental temperature and acquire the temperature characteristics as in the first embodiment, so that the adjustment step can be reduced. In addition, the same effect as in Example 1 can be obtained during normal operation.</p>

<p> The configuration of the electronic device according to the third embodiment will be described with reference to FIG. FIG. 14 is a block diagram for explaining the electronic device according to the third embodiment. The electronic device 1C according to the third embodiment includes an IGBT 10C which is a semiconductor device for power, a driver IC 20C which is a first semiconductor integrated circuit device, and a control circuit 30C which is a second semiconductor integrated circuit device. The IGBT 10C includes an ID circuit (ID CIRCUIT) 13C that stores the temperature characteristics of the temperature detection diode 12. Other configurations are the same as IGBT 10B. The ID circuit 13C is composed of a ladder resistor, an electric fuse, and the like. The driver IC 20C includes an ID read circuit 25C that reads out the temperature characteristic data of the ID circuit 13C. Other configurations are the same as the driver IC20B. The ID read circuit 25C has a different data to be read, but the configuration is the same as that of the ID read circuit 25B. The control circuit 30C has an I / O interface 34C and an ID recognition unit 319C, and does not have a PC interface 36. Other configurations are the same as those of the control circuit 30B. The ID recognition unit 319C acquires temperature characteristic data based on the signal from the ID reading circuit 25C. In the wafer test at the time of wafer manufacturing of IGBT10C, normal temperature and high temperature tests were carried out, and the temperature characteristics (first value (VF (A)), second value of the temperature detection diode 12 of IGBT10C obtained at that time. The temperature coefficient (K) is calculated from (VF (H)), the first temperature (A), the second temperature (H)), and the temperature coefficient (K) is calculated by cutting the electric fuse of the ID circuit 13C. Set. Instead of the temperature coefficient (K), the first value (VF (A)) and the second value (VF (H)) may be set by cutting the electric fuse or the like. In this case, the difference data between the typical value of VF at room temperature and the first value (VF (A)), the difference data between the typical value of VF at high temperature and the second value (VF (H)), and the reference data. It is preferable to set. In this case, it is preferable that the ID reading circuit 25C converts the three voltage values from the ID circuit 13C into PWM signals in a time division manner in the same manner as the temperature detection A / D converter 22.</p><p> The control circuit 30C will be described with reference to FIG. FIG. 15 is a block diagram showing the functions of the control circuit according to the third embodiment. The control circuit 30C according to the third embodiment does not have the PC interface 36, the outside air temperature switching unit 311C does not have the selection unit 313, and the temperature characteristic data of the temperature detection diode 12 is read out via the I / O interface 34C. It is the same as the control circuit 30A except that the ID recognition unit 319C is added. The block shown by the broken line is a software process (a process in which the CPU 31 executes a program), but the present invention is not limited to this, and may be hardware, for example. The temperature calculation processing unit 314C is composed of a temperature coefficient calculation unit 315C, a temperature value conversion unit 316, and a temperature correction unit 317. The temperature information that is the output of the average processing unit 312, the voltage information of the temperature detection diode 12 that converted the output of the temperature detection A / D converter 22 by the temperature value conversion unit 316, and the temperature coefficient (from the ID recognition unit 319C) K) is input to the temperature coefficient calculation unit 315C. For temperature detection, the temperature coefficient (K) input to the temperature coefficient calculation unit 315C, the temperature information output from the averaging processing unit 312, and the output of the temperature detection A / D converter 22 are converted by the temperature value conversion unit 316. The voltage information of the diode 12 is stored in the storage device 33.</p><p> A method of acquiring temperature characteristic data of the temperature detection diode 12, which is one step of the manufacturing method of the electronic device 1C according to the third embodiment, will be described with reference to FIG. FIG. 16 is a flowchart for explaining the temperature-related calculation unit processing according to the third embodiment. The step of storing the temperature characteristic data of the temperature detection diode 12 in the electronic device 1C is the same as that of the first embodiment except for step S20. The process corresponding to step 20 will be described below. First, read the IDB T10C ID code (step S27C). Here, the ID code includes a temperature coefficient (K), a value corresponding to the first value (VF (A)), and a value corresponding to the second value (VF (H)). Next, the temperature coefficient (K) included in the ID code or the temperature coefficient (K) calculated from the information included in the ID code is stored in the storage device 33 (step S28C). Next, the IGBT 10C is turned off (step S21). Next, the environmental temperature is set to room temperature, which is the first temperature (A) (step S22). The environmental temperature is input from the outside air temperature detector 44. Next, the temperature value converter 316 calculates the VF based on the signal from the temperature detection A / D converter 22 which is the temperature information of the IGBT 10C (temperature detection diode 12) whose ambient temperature is the first temperature. This is stored in the storage device 33 as the first value (VF (A)) (step S23).</p><p> The operation of the electronic device 1C during normal operation is the same as that of the electronic device 1A. The temperature value converter 316 calculates the VF based on the signal from the temperature detection A / D converter 22 which is the temperature information of the IGBT 10C (temperature detection diode 12), and calculates this as the third value (VF (N)). ). The temperature compensator 317 sets the third value (VF (N)), the temperature coefficient (K) stored in the storage device 33, the first temperature (A), and the first value (VF (A)). Using the above equation (2), the measured temperature (N) of IGBT 10A is calculated. The drive PWM control unit 318 controls the PWM circuit 32 so as to generate a PWM signal which is a drive signal (DRV) of the switching element 11. In addition, the temperature of the drive PWM control unit 318 is PWM circuit 32 so as to suppress the driving of the switching element 11 when the temperature approaches a predetermined temperature according to the measurement temperature result of the IGBT 10C obtained by the calculation processing unit 314C. Or, when the temperature exceeds a predetermined temperature, it is determined that the state is abnormal, and the PWM circuit 32 is controlled so as to turn off the drive of the switching element 11 to protect the IGBT 10C. According to the third embodiment, the adjustment process can be reduced because the change in the environmental temperature as in the first embodiment and the connection with the external PC as in the second embodiment are not required. In addition, the same effect as in Example 1 can be obtained during normal operation.</p><p> [Application example]</p><p> The electric motor system according to the application examples of the electronic devices of Examples 1 to 3 will be described with reference to FIG. As shown in FIG. 17, the electric motor system 200 according to the application example includes a three-phase motor 40, a power module 100 using six IGBT 10A according to the first embodiment, and six driver ICs 20A according to the first embodiment. The control circuit 30A according to the first embodiment, the power supply circuit (boost circuit) 50, and the battery 60 are provided. The power module 100 controls ON / OFF of the switching element 11 inside the power module 100 so that a current flows through each phase of the three-phase motor 40 from the voltage boosted by the power supply circuit 50 when driving a vehicle or the like. The speed of the vehicle or the like is changed according to the switching frequency. If the voltage of the battery 60 is sufficiently high, the booster circuit may not be used. Further, when braking a vehicle or the like, the switching element 11 is ON / OFF controlled in synchronization with the voltage generated in each phase of the three-phase motor 40, so-called rectification operation is performed, and the voltage is converted to DC voltage for regeneration. In the three-phase motor 40, the rotor is a permanent magnet, the armature is a coil, and the three-phase (U-phase, V-phase, W-phase) armature windings are arranged at 120-degree intervals. The coils are delta-connected, and current always flows through the three coils of U-phase, V-phase, and W-phase. The power module 100 includes U-phase IGBT 10UU for the upper arm, V-phase power IGBT 10UV for the upper arm, W-phase power IGBT 10UW for the upper arm, U-phase power IGBT 10LU for the lower arm, and V-phase power for the lower arm. It consists of IGBT10LV for power and IGBT10LW for W phase power of the lower arm. Here, the configurations of the IGBT 10UU, 10UV, 10UW, 10LU, 10LV, and 10LW are the same as those of the IGBT 10A used in Example 1. The IGBTs 10UU, 10UV, 10UW, 10LU, 10LV, and 10LW are composed of a semiconductor chip having a switching element 11, a freewheeling diode D1 connected in parallel between the emitter and collector of the switching element 11, and a temperature detection diode 12, respectively. .. The freewheeling diode D1 is connected so that a current flows in the direction opposite to the current flowing through the switching element 11. The freewheeling diode D1 does not have to be the same substrate as the semiconductor substrate on which the switching element 11 and the temperature detection diode 12 are formed. In this case, it is the same as the semiconductor substrate on which the switching element 11 and the temperature detection diode 12 are formed. It is preferable to enclose it in the package of. Instead of the IGBT 10A, driver IC 20A, and control circuit 30A according to the first embodiment, the IGBT 10B, driver IC 20B, and control circuit 30B according to the second embodiment may be used, or the IGBT 10C, driver IC 20C, and control circuit 30C according to the third embodiment may be used. May be used. In the above application example, an example of application to an inverter that converts direct current to alternating current has been described, but it may be applied to a power conversion device such as a converter used in a power supply circuit (boost circuit) 50.</p><p> The motor system 200 is used as a power source for an HEV, an EV, or the like. Electronic devices 1A, 1B, 1C are used as in-vehicle electronic devices.</p><p> [Implementation example]</p><p> As described above, the isolators 24 and 24B are composed of on-chip transformers. Hereinafter, the on-chip transformer will be described with reference to FIG. FIG. 18 is a diagram for explaining an on-chip transformer constituting an isolator of the electronic device according to the first to third embodiments. The on-chip transformer 241 forms a spiral coil 243 on the chip DIE1 provided with the transmission pulse generation circuit 242, and has a spiral shape via an interlayer film 244 formed on the insulating film such as a silicon oxide film. A coil 245 is formed and connected to the chip DIE2 provided with the reception pulse detection circuit 246 with a bonding wire 247. In other words, the on-chip transformer 241 insulates the coil 243 formed in the lower layer and the coil 245 formed in the upper layer by an interlayer film 244, and transmits a signal via a magnetic coupling 248. For example, the chip DIE1 of the driver IC 20A is connected to the control circuit 30A, and the gate circuit 21 and the temperature detection A / D converter 22 are formed in the chip DIE2. The chip DIE1 and the chip DIE2 are in one package 249. Is implemented in. The drivers IC20B and 20C can be implemented in the same way. When mounted in this way, the motor system 200 can be configured with the control circuit 30A in one package and the driver IC 20A in six packages. If the isolator is composed of photocouplers, 6 additional packages of photocouplers are required.</p><p> An example in which the power module using the IGBT of the third embodiment and the driver IC of the third embodiment are connected will be described with reference to FIG. FIG. 19 is a diagram showing the configuration of the power module, and shows one phase of three-phase control. The power module 100C includes three sets of an IGBT 10UC and a freewheeling diode D1 and three sets of an IGBT 10LC and a freewheeling diode D1. Each of the IGBTs 10UC and 10LC includes a switching element 11, a temperature detection diode 12, and an ID circuit 13C. IGBT10UC and 10LC are the same as IGBT10C according to Example 3.</p><p> The power module 100C has a gate terminal T1 for supplying a signal (Gate) to the gate terminal of the switching element 11 of the IGBT 10UC, a sense current terminal T2 for outputting a sense current (Isense) from the sense emitter terminal, and a collector terminal. It is provided with a power supply terminal (D +) for supplying a positive voltage (DC +) and a drive terminal T6 for outputting a drive current (Drive) from an emitter terminal. In addition, the power module 100C has a temperature detection diode 12 for the IGBT 10UC, a temperature detection terminal T3 for outputting the forward voltage (Temp), and a ground terminal T4 for connecting the ground voltage (GND) to the cathode terminal. Be prepared.</p><p> The power module 100C has a gate terminal T1 for supplying a signal (Gate) to the gate terminal of the switching element 11 of the IGBT 10LC, a sense current terminal T2 for outputting a sense current (Isense) from the sense emitter terminal, and an emitter terminal. It is equipped with a power supply terminal T7 for supplying a negative voltage (DC-). In addition, the power module 100C has a temperature detection diode 12 for the IGBT 10LC, a temperature detection terminal T3 for outputting the forward voltage (Temp), and a ground terminal T4 for connecting the ground voltage (GND) to the cathode terminal. Be prepared. The collector terminal of the IGBT 10LC is connected to the drive terminal T6.</p><p> The ID circuit 13C is composed of a ladder resistance, and has a terminal for measuring the reference resistance value (Ref) and a terminal for measuring the resistance value (ID) obtained by cutting the ladder resistance with an electric fuse (e-Fuse). And a terminal for connecting to GND, which are connected to the reference resistance value measurement terminal T9, the resistance value measurement terminal T8, and the ground terminal T4, respectively. The gate terminal T1, the sense current terminal T2, the temperature detection terminal T3, the ground terminal T4, the reference resistance value measurement terminal T9, and the resistance value measurement terminal T8 are connected to the driver IC 20C.</p><p> By adding the ID circuit 13C, the GND terminal of the ID circuit 13C and the GND terminal of the temperature detection diode 12 are shared, but it is necessary to add two terminals and connection wiring per driver IC, so the whole is Twelve terminals and connection wiring will be added. Similarly, when the IGBT 10B (ID circuit 13B) of Example 2 is used, it is necessary to add two terminals and connection wiring per driver IC, and a total of 12 terminals and connection wiring are added. ..</p>

<p> Example 4 is an example of obtaining the IGBT ID information (temperature characteristic data) without going through the driver IC. The configuration of the electronic device according to the fourth embodiment will be described with reference to FIG. FIG. 20 is a block diagram for explaining the electronic device according to the fourth embodiment. The electronic device 1D according to the fourth embodiment includes an IGBT 10D which is a semiconductor device for power, a driver IC 20D which is a first semiconductor integrated circuit device, and a control circuit 30D which is a second semiconductor integrated circuit device. The IGBT 10D is similar to the IGBT 10C, but the ID circuit 13C is not connected to the driver IC 20D. The driver IC20D is the same as the driver IC20. The control circuit 30D includes a PC interface 36 and an ID recognition unit 319D in place of the I / O interface 34C and the ID recognition unit 319C of the control circuit 30C. Other configurations are the same as those of the control circuit 30C. The ID recognition unit 319D acquires temperature characteristic data based on the ID measurement data library from the external storage device 46b.</p><p> Writing the temperature characteristic data to the ID circuit 13C will be described. In the wafer test process during wafer manufacturing of IGBT10D, normal temperature and high temperature tests are performed with a tester (prober) (not shown). The tester used the temperature characteristic data (first value (VF (A)), second value (VF (H)), first temperature (A)) of the temperature detection diode 12 of the IGBT 10C obtained at that time. , The temperature coefficient (K) is calculated from the second temperature (H)) and recorded in an external storage device (a storage device corresponding to the external storage device 46a of the fifth embodiment) as a wafer measurement data library. An ID writing device (not shown) reads the temperature coefficient (K) from the wafer measurement data library recorded in the external storage device and sets the temperature coefficient (K) by cutting the electric fuse of the ID circuit 13C. Instead of the temperature coefficient (K), the first value (VF (A)) and the second value (VF (H)) may be set by cutting the electric fuse or the like. In this case, the difference data between the typical value of VF at room temperature and the first value (VF (A)), the difference data between the typical value of VF at high temperature and the second value (VF (H)), and the reference data. It is preferable to set.</p><p> Next, reading the temperature characteristic data from the ID circuit 13C will be described with reference to FIGS. 21 to 23. FIG. 21 is a diagram showing a configuration of a power module according to the fourth embodiment. FIG. 22 is a diagram showing an example of the ID reading device according to the fourth embodiment. FIG. 23 is a flowchart for explaining the reading of the temperature characteristic data of the ID circuit according to the fourth embodiment. The ID READER 55D is an ID READER (ID) that detects temperature characteristic data based on the signals from the probe 552D and the probe 552D for connecting to the electrode pad 101 connected to the ID circuit 13C of the power module 100D. READER) 551D and equipped. The electrode pad 101 includes an electrode pad corresponding to a reference resistance value measuring terminal T9, a resistance value measuring terminal T8, and a grounding terminal T4. In the assembly process of the power module 100D, the ID reader 55D connects the probe 552D to the electrode pad 101 of the IGBT 10D and reads the temperature characteristic data from the ID circuit 13C after mounting the IGBT 10D on the substrate of the power module and before sealing (step S271D). ). After that, the ID reader 55D records the information indicating the mounting position of the IGBT 10D in the power module 100D and the temperature characteristic data in the external storage device 46b as an ID measurement data library (step 272D). Note that step 272D does not have to be the assembly process of the power module 100D.</p><p> The control circuit 30D according to the fourth embodiment has the temperature characteristics of the temperature detection diode 12 via the PC interface 36 instead of the ID recognition unit 319C that reads the temperature characteristic data of the temperature detection diode 12 via the I / O interface 34C. It is the same as the control circuit 30C except that it has an ID recognition unit 319D for reading data and has an outside air temperature switching unit 311 instead of the outside air temperature switching unit 311C.</p><p> A method of acquiring temperature characteristic data of the temperature detection diode 12, which is one step of the manufacturing method of the electronic device 1D according to the fourth embodiment, will be described with reference to FIG. 24. FIG. 24 is a flowchart for explaining the temperature-related calculation unit processing according to the fourth embodiment. The step of storing the temperature characteristic data of the temperature detection diode 12 in the electronic device 1D is the same as that of the third embodiment except for steps S27C and S28C. The step corresponding to step S27C is performed in the assembly process of the power module 100D as described above. The process corresponding to step 28C will be described below. The ID recognition unit 319D acquires the position information and the temperature characteristic data of the power module 100D of the IGBT 10C from the ID measurement data library recorded in the external storage device 46b via the PC interface 36. Here, the temperature characteristic data includes a temperature coefficient (K), a value corresponding to the first value (VF (A)), and a value corresponding to the second value (VF (H)). Next, the temperature coefficient (K) included in the temperature characteristic data or the temperature coefficient (K) calculated from the information included in the temperature characteristic data is stored in the storage device 33 (step S28D).</p><p> The operation of the electronic device 1D during normal operation is the same as that of the electronic device 1C. As in the third embodiment, the outside air temperature detector 44, the PC45, the external storage device 46b, and the ID reader 55D are not required during the normal operation of the electronic device 1D.</p><p> According to the fourth embodiment, it is not necessary to connect the ID circuit 13C and the driver IC 20D as in the third embodiment, so that the number of terminals and connection wiring can be reduced.</p>

<p> Example 5 is an example of obtaining the IGBT ID information (chip-specific ID code) without going through the driver IC. The configuration of the electronic device according to the fifth embodiment will be described with reference to FIG. FIG. 25 is a block diagram for explaining the electronic device according to the fifth embodiment. The electronic device 1E according to the fifth embodiment is an IGBT 10E which is a semiconductor device for electric power, a driver IC20E which is a first semiconductor integrated circuit device, and a first. It is equipped with a control circuit 30E, which is a semiconductor integrated circuit device of 2. The IGBT 10E is the same as the IGBT 10A, but with a barcode 13E that records the ID code. The driver IC20E is the same as the driver IC20. The control circuit 30E includes an ID recognition unit 319E instead of the ID recognition unit 319B of the control circuit 30B, and does not have an I / O interface 34B. Other configurations of the control circuit 30E are the same as those of the control circuit 30B. The ID recognition unit 319E acquires temperature characteristics based on the wafer measurement data library from the external storage device 46a and the ID measurement data library from the external storage device 46b.</p><p> Writing the ID code to the barcode 13E will be described. First, in the wafer test process during the manufacturing of the IGBT 10E wear, a normal temperature and high temperature test was performed using a tester (prober) (not shown), and the characteristic data of the IGBT 10E (VF (A), VF (H), K) obtained at that time. ) Is stored in the external storage device 46a as a wafer measurement data library together with the ID code. At the time of wafer test, a barcode 13E is formed on the IGBT 10E or a sticker is attached to set the ID code.</p><p> Next, reading the ID code from the barcode 13E will be described with reference to FIGS. 26 to 28. FIG. 26 is a diagram showing a configuration of a power module according to the fifth embodiment. FIG. 27 is a diagram showing an ID reading device according to the fifth embodiment. FIG. 28 is a flowchart for explaining the reading of the ID code according to the fifth embodiment. The ID READ DEVICE 55E is an ID reader (ID READ DEVICE) 55E that detects the ID code based on the signal from the camera 552E or barcode reader 553E for reading the barcode 13E of the IGBT 10E and the signal from the camera 552E or barcode reader 553E. It is equipped with a barcode reader, BAR-CODE READER) 551E. In the assembly process of the power module 100E, the ID reader 55E reads the ID code from the barcode 13E using the camera 552E or the barcode reader 553E (step S271E), and the information and ID code that show the mounting position of the IGBT 10E in the power module 100E. Is recorded in the external storage device 46b as an ID measurement data library (step 272E).</p><p> The control circuit 30E according to the fifth embodiment has the temperature characteristics of the temperature detection diode 12 via the PC interface 36 instead of the ID recognition unit 319B that reads the temperature characteristic data of the temperature detection diode 12 via the I / O interface 34B. It is the same as the control circuit 30B except that it has an ID recognition unit 319E for reading data.</p><p> A method of acquiring temperature characteristic data of the temperature detection diode 12, which is one step of the manufacturing method of the electronic device 1E according to the fifth embodiment, will be described with reference to FIG. FIG. 29 is a flowchart for explaining the temperature-related calculation unit processing according to the fifth embodiment. The step of storing the temperature characteristic data of the temperature detection diode 12 in the electronic device 1E is the same as that of the second embodiment except for steps S27 and S28. The step corresponding to step S27 is performed in the assembly process of the power module 100E as described above. The process corresponding to step 28 will be described below. The ID recognition unit 319E acquires the mounting position information and the ID code of the power module 100E of the IGBT 10B from the ID measurement data library recorded in the external storage device 46b via the PC interface 36. The ID recognition unit 319E acquires the temperature characteristic data of the IGBT 10B from the wafer measurement data library recorded in the external storage device 46a based on the ID code. Here, the temperature characteristic data includes a temperature coefficient (K), a value corresponding to the first value (VF (A)), and a value corresponding to the second value (VF (H)). Next, the temperature coefficient (K) included in the temperature characteristic data or the temperature coefficient (K) calculated from the information included in the temperature characteristic data is stored in the storage device 33 (step S28E).</p><p> The operation of the electronic device 1E during normal operation is the same as that of the electronic device 1B. As in the second embodiment, the outside air temperature detector 44, PC45, the external storage devices 46a, 46b, and the ID reading device 55E are not required during the normal operation of the electronic device 1E.</p><p> According to the fifth embodiment, it is not necessary to connect the ID circuit 13B and the driver IC 20F as in the second embodiment, so that the number of terminals and connection wiring can be reduced. Further, since it is not necessary to provide the ID circuit in the IGBT 10E as in the fourth embodiment, the production of the IGBT can be facilitated and the cost can be reduced.</p>

<p> Example 6 is another example of obtaining the IGBT ID information (chip-specific ID code) without going through the driver IC. The configuration of the electronic device according to the sixth embodiment will be described with reference to FIG. FIG. 30 is a block diagram for explaining the electronic device according to the sixth embodiment. The electronic device 1F according to the sixth embodiment is an IGBT 10F which is a semiconductor device for electric power, a driver IC 20F which is a first semiconductor integrated circuit device, and a first. It is equipped with a control circuit 30F, which is a semiconductor integrated circuit device of 2. The IGBT 10F is the same as the IGBT 10B, but the ID circuit 13B is not connected to the driver IC 20F. The driver IC20F is the same as the driver ICs 20 and 20E. The control circuit 30F is the same as the control circuit 30E. The ID recognition unit 319E acquires temperature characteristics based on the wafer measurement data library from the external storage device 46a and the ID measurement data library from the external storage device 46b.</p><p> Writing the ID code to the ID circuit 13B will be described. First, in the wafer test process during wafer manufacturing of the IGBT 10F, normal temperature and high temperature tests were performed using a tester (prober) (not shown), and the characteristic data of the IGBT 10F (VF (A), VF (H), K) obtained at that time. ) Is stored in the external storage device 46a as a wafer measurement data library together with the ID code. At the time of the wafer test, the ID code is set by cutting the electric fuse of the ID circuit 13B of the IGBT 10F.</p><p> Next, reading the ID code from the ID circuit 13B will be described with reference to FIG. FIG. 31 is a flowchart for explaining the reading of the ID code according to the sixth embodiment. In the assembly process of the power module 100F, the ID reader 55D connects the probe 552D to the terminal, reads the ID code from the ID circuit 13B (step S271F), and obtains the information and ID code that shows the mounting position of the IGBT 10B in the power module 100F. Record in external storage 46b as an ID measurement data library (step 272F).</p><p> The method of acquiring the temperature characteristic data of the temperature detection diode 12, which is one step of the manufacturing method of the electronic device 1F according to the sixth embodiment, is the same as that of the fifth embodiment.</p><p> The operation of the electronic device 1F during normal operation is the same as that of the electronic device 1B. As in the second embodiment, the outside air temperature detector 44, PC45, the external storage devices 46a and 46b, and the ID reading device 55D are not required during the normal operation of the electronic device 1F.</p><p> According to the sixth embodiment, it is not necessary to connect the ID circuit 13B and the driver IC 20F as in the second embodiment, so that the number of terminals and connection wiring can be reduced.</p>

<p> Example 7 is an example in which the existing IGBT terminal and the ID circuit terminal are shared to obtain ID information (chip-specific ID code). The configuration of the electronic device according to the seventh embodiment will be described with reference to FIG. FIG. 32 is a block diagram for explaining the electronic device according to the seventh embodiment. The electronic device 1G according to the seventh embodiment includes an IGBT 10G which is a semiconductor device for electric power, a driver IC 20G which is a first semiconductor integrated circuit device, and a first. It is equipped with a control circuit 30G, which is a semiconductor integrated circuit device of 2. FIG. 33 is a diagram showing the configuration of the IGBT according to the seventh embodiment. The IGBT 10G adds a switching circuit 14 to the IGBT 10B, the gate terminal T1 is shared with the terminal for measuring the resistance value (ID) of the ID circuit 13B, and the sense current terminal T2 uses the reference resistance value (Ref) of the ID circuit 13B. It is shared with the terminal for measurement. The switching circuit 14 is controlled by a signal (Select) input from the terminal T10. The driver IC 20G is the same as the driver IC 20B except for the ID reading circuit 25G. The ID read circuit 25G reads the ID except that it outputs a signal for controlling the switching circuit 14, a signal line for outputting a drive signal (DRV), and a signal line for passing a bias current to input a signal from the ID circuit 13G. Similar to circuit 25B. The control circuit 30G includes an ID recognition unit 319G instead of the ID recognition unit 319 of the control circuit 30B. Other configurations are the same as those of the control circuit 30B. The ID recognition unit 319G recognizes the ID code based on the signal from the ID reading circuit 25G. In the wafer test process during wafer manufacturing of IGBT 10G, normal temperature and high temperature tests are performed with a tester (prober) (not shown), and the characteristic data (VF (A), VF (H), K) of IGBT 10G obtained at that time are used. It is stored in the external storage device 46 as a wafer measurement data library together with the ID code. The ID code is set by cutting the electric fuse of the ID circuit 13B of the IGBT 10G during the wafer test.</p><p> A method of acquiring temperature characteristic data of the temperature detection diode 12, which is one step of the manufacturing method of the electronic device 1G according to the seventh embodiment, will be described with reference to FIG. FIG. 34 is a flowchart for explaining the temperature-related calculation unit processing according to the seventh embodiment. The manufacturing method of the electronic device 1G is the same as that of the second embodiment except that a new process is inserted before the step S27 and after the step 28. Steps 27 and 28 and the steps before and after them will be described below. First, the ID recognition unit 319G inputs a signal (Select) for the switching circuit 14 to connect the output of the ID circuit 13B to the gate terminal T1 and the temperature detection terminal T3 to the terminal T10 (step S31). The ID recognition unit 319G reads the ID code of the IGBT 10G (step S27). Next, the ID recognition unit 319G acquires the temperature coefficient (K) from the external storage device 46 in which the wafer measurement data library is stored by the ID code, and stores it in the storage device 33 (step S28). Next, the ID recognition unit 319G inputs a signal (Select) for the switching circuit 14 to cut off the output of the ID circuit 13B from the gate terminal T1 and the temperature detection terminal T3 to the terminal T10 (step S31).</p><p> The normal operation of the electronic device 1G is the same as that of the electronic device 1B. As in the second embodiment, the outside air temperature detector 44, the PC 45, and the external storage device 46 are not required during the normal operation of the electronic device 1G.</p><p> According to the seventh embodiment, since the switching circuit shares the terminal for reading the ID and the terminal used during normal operation, the number of terminals and connection wiring can be reduced. The switching circuit is controlled by the signal (Select) from the CPU, but the signal (Select) is acquired because the IGBT is mounted on the board and is executed only in the initial stage of the system integration test. , You may do it by pin setting on the board. Instead of the ID circuit 13B that stores the ID code unique to the IGBT, the ID circuit 13C that stores the temperature characteristic data of the IGBT may be used.</p>

<p> Example 8 is an example of obtaining ID information (chip-specific ID code) by a serial interface. The configuration of the electronic device according to the eighth embodiment will be described with reference to FIG. 35. FIG. 35 is a block diagram for explaining the electronic device according to the eighth embodiment. The electronic device 1H according to the eighth embodiment is an IGBT 10H which is a semiconductor device for electric power, a driver IC 20H which is a first semiconductor integrated circuit device, and a first. It is equipped with a control circuit 30H, which is a semiconductor integrated circuit device of 2. The IGBT 10H is provided with an ID circuit 13H having an interface function of storing an ID code in a digital circuit instead of the ID circuit 13B of the IGBT 10B and serially communicating the ID code. Other configurations are the same as IGBT 10B. The driver IC 20H is the same as the driver IC 20B except for the ID reading circuit 25H. The ID read circuit 25H does not convert an analog ID code into a digital serial signal like the ID read circuit 25B, but has a function of receiving a digital ID code from the ID circuit 13H and passing it to the control circuit 30H by serial communication. Have. The control circuit 30H includes an ID recognition unit 319H instead of the ID recognition unit 319 of the control circuit 30B, and an I / O interface 34H instead of the I / O interface 34B. Other configurations are the same as those of the control circuit 30B. The ID recognition unit 319H recognizes the ID code based on the signal from the ID reading circuit 25H. In the wafer test process during wafer manufacturing of IGBT10H, normal temperature and high temperature tests were performed with a tester (prober) (not shown), and the characteristic data (VF (A), VF (H), K) of IGBT10H obtained at that time were used. It is stored in the external storage device 46 as a wafer measurement data library together with the ID code. The ID code is set by cutting the electric fuse of the ID circuit 13H of the IGBT 10H during the wafer test.</p><p> A method of reading the ID code from the ID circuit of the IGBT in the power module by serial communication will be described with reference to FIGS. 36 and 37. FIG. 36 is a block diagram showing a connection example of the driver IC and the IGBT according to the eighth embodiment. FIG. 37 is a timing diagram of serial communication in the configuration of FIG. 36.</p><p> The upper arm side (high side) IGBT ID circuit in 3-phase control is connected in series, and the U-phase driver IC20H, U-phase ID circuit 13H, V-phase ID circuit 13H, W-phase ID circuit 13H, Connect in the order of driver IC20H. The lower arm side (low side) ID circuit is also connected longitudinally, and the U-phase driver IC 20H, U-phase ID circuit 13H, V-phase ID circuit 13H, W-phase ID circuit 13H, and driver IC 20H are connected in this order. A serial clock signal (SCK) is output from the clock terminal of the driver IC 20H and input to the clock terminal of the U-phase ID circuit 13H, the clock terminal of the V-phase ID circuit 13H, and the clock terminal of the W-phase ID circuit 13H. Serial data is output from the data output terminal SO of the driver IC20H and input to the data input terminal DI_U of the U-phase ID circuit 13H. Serial data is output from the data output terminal DO_U of the U-phase ID circuit 13H and input to the data input terminal DI_V of the V-phase ID circuit 13H. Serial data is output from the data output terminal DO_V of the V-phase ID circuit 13H and input to the data input terminal DI_W of the W-phase ID circuit 13H. Serial data is output from the data output terminal DO_W of the W-phase ID circuit 13H and input to the data input terminal SI of the driver IC 20H. The V-phase driver IC 20H is connected to the U-phase IGBT 10H switching element 11 and the temperature detection diode 12, but is not connected to the ID circuit 13H. The W-phase driver IC 20H is connected to the W-phase IGBT 10H switching element 11 and the temperature detection diode 12, but not to the ID circuit 13H.</p><p> For example, the ID circuit 13H is configured to set a 7-bit length ID code, and the serial data from the driver IC 20H is U in the order of TX (0), TX (1), ..., TX (6). It is transmitted to the phase ID circuit 13H. ID codes of ID_U (0), ID_U (1), ..., ID_U (6) are set in the U-phase ID circuit 13H, and are transmitted to the V-phase ID circuit 13H in this order. ID codes of ID_V (0), ID_V (1), ..., ID_V (6) are set in the V-phase ID circuit 13H, and are transmitted to the W-phase ID circuit 13H in this order. ID codes of ID_W (0), ID_W (1), ..., ID_W (6) are set in the W-phase ID circuit 13H, and are transmitted to the driver IC 20H in this order. As a result, by inputting to the CPU31 from the data output terminal DO_W in synchronization with the serial signal output from the CPU31, the W-phase IGBT ID code, the V-phase IGBT ID code, and the U-phase IGBT ID code, It can be acquired in the order of the output information of CPU31.</p><p> In addition, the output information from the CPU 31 is output in a specific pattern, and the daisy chain configuration confirms that the IGBT chip is installed, or the CPU 31 sends a known specific pattern for signal synchronization (where the ID code starts). It is possible to apply. It is also possible to check if there is a timing shift in data reading by the TX (n) signal from the CPU 31 that was input last.</p><p> A method of acquiring temperature characteristic data of the temperature detection diode 12, which is one step of the manufacturing method of the electronic device 1H according to the eighth embodiment, will be described with reference to FIG. 38. FIG. 38 is a flowchart for explaining the temperature-related calculation unit processing according to the eighth embodiment. The manufacturing method of the electronic device 1H is the same as that of the second embodiment except that the processes of steps S27 and 28 are different. The steps corresponding to steps 27 and 28 will be described below. First, the ID recognition unit 319H outputs the serial clock signal (SK) to the IGBT 10H of each phase via the driver IC 20H, and outputs the serial data to the data input terminal DI_U of the U-phase IGBT 10H (step S271H). The ID recognition unit 319H reads the ID code of the IGBT 10H of each phase from the data output terminal DO_W of the W phase IGBT 10H (step S27). Next, the ID recognition unit 319H acquires the temperature coefficient (K) from the external storage device 46 in which the wafer measurement data library is stored by the ID code of the IGBT 10H of each phase, and stores it in the storage device 33 (step S28).</p><p> The operation of the electronic device 1H during normal operation is the same as that of the electronic device 1B. As in the second embodiment, the outside air temperature detector 44, the PC 45, and the external storage device 46 are not required during the normal operation of the electronic device 1H.</p><p> According to the eighth embodiment, since only the one-phase driver IC is connected to the ID circuit of the IGBT, the number of terminals and connection wiring can be reduced. Instead of storing the ID code unique to the IGBT, the ID circuit 13H may store the temperature characteristic data of the IGBT.</p><p> Although the invention made by the present inventor has been specifically described above based on the embodiment, it goes without saying that the present invention is not limited to the above embodiment and can be variously modified.</p><p> Hereinafter, embodiments will be described as additional notes. (Appendix 1) The driving method of the power semiconductor device incorporating the switching element and the temperature detection diode is as follows: (a) a step of preparing an electronic device storing the temperature characteristic data of the temperature detection diode, and (b). A step of driving the switching element, (c) a step of detecting temperature information from the temperature detection diode, and (d) detecting the temperature of the power semiconductor device based on the temperature information and the temperature characteristic data. The temperature characteristic data includes a step and (e) a step of stopping or suppressing the drive of the switching element when the temperature detected in the step (d) exceeds a predetermined temperature, and the temperature characteristic data includes the temperature coefficient and the first. It is the temperature of the temperature environment and the voltage information of the temperature detection diode in the first temperature environment. (Appendix 2) In the method of driving the power semiconductor device in Appendix 1, The temperature characteristic data includes (a1) detecting the temperature in the first temperature environment, (a2) detecting the voltage information of the temperature detecting diode in the first temperature environment, and (a3) the second temperature. The temperature of the environment is detected, (a4) the voltage information of the temperature detection diode is detected in the second temperature environment, and (a5) the temperature and the voltage information obtained in (a1) to (a4) are obtained. It is calculated based on this. (Appendix 3) In the driving method of the power semiconductor device of Appendix 1, the temperature characteristic data is (a1) for detecting the temperature in the first temperature environment, and (a2) for the temperature detection in the first temperature environment. The voltage information of the diode is detected, (a3) the identification information of the power semiconductor device is recognized from the power semiconductor device, and (a4) the temperature characteristic data corresponding to the identification information is acquired from the external storage device. It was obtained. (Appendix 4) In the driving method of the power semiconductor device of Appendix 3, the temperature characteristic data was obtained by the test in the first temperature environment and the second temperature environment of the wafer test at the time of manufacturing the power semiconductor device. It is a temperature coefficient. (Appendix 5) In the method of driving the power semiconductor device in Appendix 3, The temperature characteristic data is the temperature coefficient obtained by the test in the first temperature environment and the second temperature environment of the wafer test at the time of manufacturing the semiconductor device for electric power, and the voltage of the temperature detection diode in the first temperature environment. Information and voltage information of the temperature detection diode in the second temperature environment. (Appendix 6) In the driving method of the power semiconductor device of Appendix 3, the temperature characteristic data is (a5) for the voltage information obtained in (a2) and the temperature detection in the first temperature environment during the wafer test. When the difference from the voltage information of the diode is more than a predetermined value, it is obtained by correcting the temperature offset. (Appendix 7) In the method of driving the power semiconductor device of Appendix 1, the temperature characteristic data is (a1) for detecting the temperature in the first temperature environment, and (a2) for the temperature detection in the first temperature environment. It was obtained by detecting the voltage information of the diode and (a3) acquiring the temperature characteristic data of the power semiconductor device from the power semiconductor device. (Appendix 8) In the method of driving the power semiconductor device in Appendix 7, The temperature characteristic data is the temperature coefficient obtained by the test in the first temperature environment and the second temperature environment of the wafer test at the time of manufacturing the semiconductor device for electric power, or the temperature detection diode in the first temperature environment. It is the voltage information and the voltage information of the temperature detection diode in the second temperature environment.</p><p> (Appendix 9) The electronic device is manufactured by (a) a semiconductor device for electric power incorporating a switching element and a diode for temperature detection, and a first semiconductor integrated circuit device having a gate circuit for driving the switching element. , A second semiconductor integrated circuit device having a control unit that controls the gate circuit and an electrically rewritable non-volatile memory, a process of preparation, and (b) acquisition of temperature characteristic data of the temperature detection diode. Includes steps to be performed. (Appendix 10) In the method for manufacturing the electronic device of Appendix 9, the step (b) includes (b1) the step of detecting the temperature of the first temperature environment and storing it in the non-volatile memory, and (b2) the first step. The step of detecting the voltage information of the temperature detection diode in the temperature environment of the above and storing it in the non-volatile memory, (b3) the step of detecting the temperature of the second temperature environment, and (b4) the second temperature. The temperature characteristic data is acquired based on the temperature and the voltage information obtained in the step of detecting the voltage information of the temperature detection diode in the environment and the steps (b5) (b1) to (b4), and the non-volatile material is obtained. Includes steps to store in sex memory. (Appendix 11) In the manufacturing method of the electronic device of Appendix 9, The steps (b) are (b1) a step of detecting the temperature in the first temperature environment and storing it in the non-volatile memory, and (b2) detecting the voltage information of the temperature detection diode in the first temperature environment. Then, the step of storing in the non-volatile memory, (b3) the step of recognizing the identification information of the power semiconductor device from the power semiconductor device, and (b4) the temperature characteristic data corresponding to the identification information are stored in an external database. Includes a step of obtaining from and storing in the non-volatile memory. (Appendix 12) In the manufacturing method of the electronic device of Appendix 10, the temperature characteristic data is the temperature coefficient obtained by the test in the first temperature environment and the second temperature environment of the wafer test at the time of manufacturing the semiconductor device for electric power. is there. (Appendix 13) In the manufacturing method of the electronic device of Appendix 11, the temperature characteristic data is the temperature coefficient obtained by the test in the first temperature environment and the second temperature environment of the wafer test at the time of manufacturing the semiconductor device for electric power. It is the voltage information of the temperature detection diode in the first temperature environment and the voltage information of the temperature detection diode in the second temperature environment. (Appendix 14) In the manufacturing method of the electronic device of Appendix 13, In the step (b), when the difference between the voltage information obtained in the step (b5) and the step (b2) and the voltage information of the temperature detection diode in the first temperature environment at the time of the wafer test is a predetermined value or more. Includes steps to correct the temperature offset. (Appendix 15) In the method for manufacturing an electronic device according to Appendix 9, the step (b) includes (b1) the step of detecting the temperature of the first temperature environment and storing it in the non-volatile memory, and (b2) the first step. The step of detecting the voltage information of the temperature detection diode in the temperature environment of the above and storing it in the non-volatile memory, and (b3) acquiring the temperature characteristic data of the power semiconductor device from the power semiconductor device, and the non-volatile Includes steps to store in volatile memory. (Appendix 16) In the manufacturing method of the electronic device of Appendix 15, the temperature characteristic data is the temperature coefficient obtained by the normal temperature and high temperature test of the wafer test at the time of manufacturing the semiconductor device for electric power, or the temperature in the first temperature environment. It is the voltage information of the detection diode and the voltage information of the temperature detection diode in the second temperature environment.</p>

1,1A, 1B, 1C Electronic device 1D, 1E, 1F, 1G, 1H Electronic device 10 Semiconductor device for electric power 10A, 10B, 10C IGBT (Semiconductor device for electric power) 10D , 10E, 10F, 10G, 10H IGBT 11 Switching element 12 Temperature detection diode 13B, 13C ID circuit 13E Bar code 13G, 13H ID circuit 14 Switching circuit 20 1st semiconductor integrated circuit device 20A, 20B, 20C Driver IC (1st semiconductor integrated circuit device) 20D, 20E, 20F, 20G, 20H Driver IC 21 Gate circuit (drive circuit) 22 A / D converter for temperature detection (detection circuit) 23 Current bias circuit 24 Isolator 25 ID read circuit 25G, 25H ID Read circuit 30 2nd semiconductor integrated circuit device 30A, 30B, 30C Control circuit (2nd semiconductor integrated circuit device) 30D, 30E, 30F, 30G, 30H Control circuit 31 CPU 32 PWM circuit 33 Storage device 34,34B, 34C I / O interface 34H I / O interface 35 A / D converter 36 PC interface 44 Outside air temperature detector 45 PC