Method for package-on-package assembly with wire bonds to encapsulation surface
18 claims: 18 independent, 0 dependent
- 1超小型電子パッケージを作製する方法であって、 a)所定の長さを有する金属ワイヤセグメントをボンディングツールのキャピラリから送り出すステップと、 b)前記ボンディングツールを使用するステップであって、前記金属ワイヤの一部分を基板の第1の表面において露出する導電性素子に結合し、それにより、前記導電性素子上にワイヤボンドのベースを形成する、使用するステップと、 c)前記ワイヤの一部分を前記ボンディングツール内に固定するステップと、 d)前記固定された部分と前記ベースとの間の場所において前記金属ワイヤを切断するステップであって、前記ワイヤボンドの端面を少なくとも部分的に画定し、前記ベースと前記端面との間に前記ワイヤボンドのエッジ面が画定される、切断するステップと、 e)ステップ(a)~ステップ(d)を繰り返すステップであって、前記基板の複数の前記導電性素子への複数のワイヤボンドを形成する、繰り返すステップと、 f)その後、前記基板の前記表面の上に重なる誘電体封止層を形成するステップであって、前記封止層は、前記基板の前記表面及び前記ワイヤボンドの一部分を少なくとも部分的に被覆するように形成され、それにより、前記封止層によって被覆されない前記ワイヤボンドの端面又はエッジ面のうちの少なくとも一方の一部分によって、前記ワイヤボンドの封止されない部分が画定される、形成するステップと、を含み、 前記基板の上にステンシルを位置決めするステップを更に含み、前記ステンシルは前記導電性素子の少なくとも一部の上に重なり、該少なくとも一部を露出させる複数の開口部を有し、該開口部は前記基板の上方の第1の高さに位置決めされるそれぞれのエッジを画定し、前記ワイヤセグメントは、前記ステンシル開口部の前記エッジに対する前記ワイヤの横方向への移動によって切断される、超小型電子パッケージを作製する方法。
- 2超小型電子パッケージを作製する方法であって、 a)第1の表面と、該第1の表面から離れた第2の表面とを有する基板と、前記基板の前記第1の表面に実装される超小型電子素子と、前記第1の表面において露出する複数の導電性素子とを含む処理中ユニットの上にステンシルを位置決めするステップであって、前記導電性素子のうちの少なくとも幾つかは前記超小型電子素子に電気的に接続され、前記ステンシルは、前記導電性素子の少なくとも一部の上に重なり、該少なくとも一部を露出させる複数の開口部を有し、該開口部は前記基板の上方の第1の高さに位置決めされるそれぞれのエッジを画定する、位置決めするステップと、 b)所定の長さを有する金属ワイヤセグメントをボンディングツールのキャピラリから送り出すことと、前記ワイヤセグメントの一部分を前記導電性素子のうちの1つに接合し、ワイヤボンドのベースを形成することと、前記ステンシル開口部の前記エッジに対して前記ワイヤを横方向に移動することにより、前記ワイヤセグメントを剪断して、前記ワイヤボンドを前記ワイヤセグメントの残りの部分から分離し、前記ワイヤボンド上の端面を画定することとを含むプロセスによって、前記ワイヤボンドを形成するステップであって、前記ワイヤボンドは前記ベースと前記端面との間に延在するエッジ面を画定する、形成するステップと、 c)ステップ(b)を繰り返すステップであって、複数の前記導電性素子上に複数のワイヤボンドを形成する、繰り返すステップと、を含む、超小型電子パッケージを作製する方法。
- 3前記処理中ユニット上に誘電体封止層を形成するステップを更に含み、前記封止層は、前記第1の表面と、前記ワイヤボンドの一部分とを少なくとも部分的に被覆するように形成され、それにより、前記封止層によって被覆されない前記ワイヤボンドの前記端面又は前記エッジ面のうちの少なくとも一方の一部分によって、前記ワイヤボンドの封止されない部分が画定される、請求項 2 に記載の方法。
- 4前記キャピラリの面を越えて延在する前記ワイヤセグメントの残りの部分は、後続のワイヤボンドの少なくともベースを形成するのに十分な長さからなる、請求項 2 に記載の方法。
- 5前記ステンシルは、前記 開口部 のうちの1つの 開口部 の軸の方向において厚みを画定し、前記 開口部 のうちの少なくとも幾つかは前記ステンシルの厚みを通して一貫した直径からなる、請求項 2 に記載の方法。
- 6前記ステンシルは前記 開口部 のうちの1つの 開口部 の軸の方向において厚みを画定し、前記 開口部 のうちの少なくとも幾つかは、前記エッジ付近の小さな直径から、前記エッジと前記基板との間の場所における大きな直径までテーパを付けられる、請求項 2 に記載の方法。
- 7前記ステンシルは、前記基板の1つ又は複数のエッジに沿って延在する前記基板の厚みの方向において第1の厚みを有するエッジ部材であって、前記第1の厚みは前記第1の高さを画定する、エッジ部材と、前記 開口部 を含み、前記エッジ部材によって囲まれる中央部分であって、該中央部分は前記基板から離れて面する外面を有し、該外面は前記第1の高さに配置され、該中央部分は前記第1の厚みより薄い厚みを更に有する、中央部分とを含む、請求項 2 に記載の方法。
- 8超小型電子パッケージを作製する方法であって、 a)処理中ユニットの基板に関連付けられる構造の表面を設けるステップであって、前記基板は、第1の表面と、該第1の表面から離れた第2の表面とを有し、複数の導電性素子が前記第1の表面において露出し、前記構造は、前記導電性素子の少なくとも一部の上に重なり、該少なくとも一部を露出させる複数の開口部を有する、設けるステップと、 b)金属ワイヤをボンディングツールのキャピラリを通して送り出すことと、前記ワイヤの一部分を前記導電性素子のうちの1つに接合し、ワイヤボンドのベースを形成することと、前記ワイヤボンドの前記ベースに対して前記ボンディングツールを移動し、前記ワイヤボンドのための所定の長さの前記ワイヤを設けることと、前記構造の前記基板に対する前記ボンディングツールの移動を通して、前記ワイヤボンドを前記ワイヤの残りの部分から分離し、前記ワイヤボンドの前記ベースから離れた前記ワイヤボンドの自由端を画定することとを含むプロセスによって、前記ワイヤボンドを形成するステップと、を含む、超小型電子パッケージを作製する方法。
- 9前記構造は、取外し可能ステンシルである、請求項 8 に記載の方法。
- 10前記構造は前記基板の前記第1の表面の上に位置決めされる、請求項 8 に記載の方法。
- 11前記構造の前記表面は前記開口部のうちの少なくとも1つにおいてエッジを含み、前記ワイヤは、前記ワイヤボンドが前記ワイヤから分離されるまで、前記エッジに対して前記ワイヤを移動することによって剪断される、請求項 8 に記載の方法。
- 12前記基板の前記第1の表面に超小型電子素子が実装され、前記導電性素子の少なくとも幾つかは前記超小型電子素子に電気的に接続される、請求項 8 に記載の方法。
- 13c)ステップ(b)を繰り返すステップであって、複数の前記導電性素子上に複数のワイヤボンドを形成する、繰り返すステップを更に含む、請求項 8 に記載の方法。
- 14前記処理中ユニット上に誘電体封止層を形成するステップを更に含み、前記封止層は、前記第1の表面と、前記ワイヤボンドの一部分とを少なくとも部分的に被覆するように形成され、それにより、前記封止層によって被覆されない前記自由端 の端面 又は前記 自由端 の前記ベースと前記端面との間に延在するエッジ面のうちの少なくとも一方の一部分によって、前記ワイヤボンドの封止されない部分が画定される、請求項 13 に記載の方法。
- 15前記キャピラリの面を越えて延在する前記ワイヤの残りの部分は、後続のワイヤボンドの少なくともベースを形成するのに十分な長さからなる、請求項 8 に記載の方法。
- 16前記構造は前記開口部のうちの1つの開口部の軸の方向において厚みを画定し、前記開口部のうちの少なくとも幾つかは前記構造の前記厚みを通して一貫した直径からなる、請求項 8 に記載の方法。
- 17前記構造は前記開口部のうちの1つの開口部の軸の方向において厚みを画定し、前記開口部のうちの少なくとも幾つかは、前記基板の上方の第1の高さに位置決めされる前記構造の前記表面のエッジ付近の小さな直径から、前記エッジと前記基板との間の場所における大きな直径までテーパを付けられる、請求項 8 に記載の方法。
- 18前記構造は、前記基板の1つ又は複数のエッジに沿って延在する前記基板の厚みの方向において第1の厚みを有するエッジ部材であって、前記第1の厚みが第1の高さを画定し、前記第1の高さにおいて前記構造の前記表面のエッジが前記基板の上方に位置決めされるエッジ部材と、前記開口部を含み前記エッジ部材によって囲まれる中央部分とであって、該中央部分は前記基板から離れて面する外面を有し、該外面は前記第1の高さに配置され、該中央部分は前記第1の厚みより薄い厚みを更に有する、中央部分とを含む、請求項 8 に記載の方法。
Independent claims18
69 paragraphs, as filed
0001Embodiments of the invention herein are in package-on-package assembly. More details regarding various structures and methods for producing ultra-small electronic packages that can be used. In detail, incorporate wire bonds as part of the package-on-package connection, as such Structure.
0002[Cross-reference of related applications] This application is a continuation of U.S. Patent Application No. 13 / 752,485 filed on January 29, 2013. It is an application, the patent application of which is U.S. Patent Application No. 13/40 filed on February 24, 2012. No. 5,125, currently U.S. Pat. No. 8,372,741 issued on February 12, 2013 It is a continuation application and the disclosure of those patent documents forms part of this specification by citation. To be.
0003Ultra-small electronic devices such as semiconductor chips usually have a large number of input / output contacts to other electronic components. I need a continuation. Input / output contacts for semiconductor chips or other equivalent devices are typically de. A grid-like pattern that effectively covers the surface of the vise (commonly referred to as an "area array") Or elongated that can extend parallel to and adjacent to each edge of the front of the device Placed in rows or in the center of the front. Devices such as chips are usually pudding It must be physically mounted on a board such as a circuit board, and device contacts are circuits. It must be electrically connected to the conductive mechanism of the substrate.
0004Semiconductor chips are generally manufactured and used on circuit boards or external boards such as other circuit panels. It is provided in a package that facilitates handling of the chip during mounting. For example Many semiconductor chips are provided in packages suitable for surface mounting. This general Numerous types of packages have been proposed for a variety of applications. Most commonly, that Such packages are formed as metal structures plated or etched on a dielectric. Includes a dielectric element, commonly referred to as a "chip carrier," which has terminals. These terminals Is usually by a mechanism such as a thin trace that extends along the chip carrier itself, and By fine leads or wires extending between the contacts of the device and the terminals or traces Connected to the contacts on the chip itself. In surface mount operation, the package is packaged The circuit board so that each terminal on the circuit board is aligned with the corresponding contact pad on the circuit board. Placed on the board. Solder or other binder is provided between the terminals and the contact pad .. Heat the assembly to melt or "reflow" the solder, or other By activating the binder in the form, the package can be permanently bonded in place. To.
0005Many packages are attached to the terminals of the package and are about 0.1 mm in diameter and about Includes solder mass in the form of 0.8 mm (5 mil and 30 mil) solder balls. package Packages with an array of solder balls protruding from the bottom of the ball grid are generally It is called an array or "BGA" package. Land grid array or "LG Other packages, called "A" packages, are in thin layers or lands formed from solder. Therefore, it is fixed to the substrate. This type of package can be very small. one Certain packages, commonly referred to as "chip-scale packages," are assembled into packages. Of a circuit board that is equal to or slightly larger than the area of the embedded device Occupy the area. This reduces the overall size of the assembly and allows for various devices on the board. It is possible to use short interconnections between devices, which in turn controls the signal propagation time between devices. This is advantageous in that it is limited and thus facilitates high speed operation of the assembly.
0006Packaged semiconductor chips are often provided in "laminated" configurations. .. In a laminated configuration, one package is provided, for example, on a circuit board, and another package is the first. Implemented on top of one package. With these configurations, a single ground contact area on the circuit board Can allow multiple different chips to be mounted within, short between packages High-speed operation can be further facilitated by providing interconnection. In many cases , This interconnection distance is only slightly greater than the thickness of the chip itself. Chip package Each package (except for the top package) to achieve interconnection within the stack It is necessary to provide structures for mechanical and electrical connections on both sides of the. this For example, to provide contact pads or lands on both sides of the board on which the chip is mounted. Therefore, the pads are connected through the substrate by conductive vias or the like. Above the lower board Solder bow to fill the gap between the contact at the bottom and the contact at the bottom of the next taller board Le etc. have been used. Solder balls are the height of the tip to connect the contacts It must be very expensive. Examples of laminated chip configurations and interconnect structures are published in the U.S. patent application. It is provided in No. 2010/0232129 ("Published No. 129"). This sentence The disclosure of the donation is hereby incorporated by reference in its entirety.
0007For connecting ultra-small electronic packages to circuit boards, and for ultra-small electronic packaging Use microcontact elements in the form of elongated posts or pins for other connections in Can be In some examples, microcontacts include one or more metal layers. Formed by etching metal structures to form microcontacts .. The etching process limits the size of the microcontacts. Traditional etch The process usually has a height-to-maximum ratio, referred to herein as the "aspect ratio." Unable to form large microcontacts. Considerable height and adjacent microphone Form an array of microcontacts with very small pitches or spacings between the contacts It was difficult or impossible to do. In addition, it is shaped by a conventional etching process The composition of microcontacts made is limited.
<p num="0008"> Despite all the above-mentioned advances in the art, microelectronic packages Further improvements in fabrication and testing are still desirable.</p>
<p num="0009"> The microelectronic assembly includes a substrate with opposite first and second surfaces. Can be taken. Ultra-small electronic devices can be superposed on the first surface, the first conductive element The offspring can be exposed on at least one of the first surface or the second surface. Some of the first conductive elements may be electrically connected to the microelectronic element. Wa It has a base to which earbonds are bonded to a conductive element, a substrate and an end face away from the base. To. Each wire bond can define an edge plane that extends between the base and the end face. The sealing layer extends from the first surface and can fill the space between the wire bonds, thereby , The wire bond can be separated by the sealing layer. W that is not covered by the sealing layer At least a portion of the end face of the earbond defines the unsealed portion of the wire bond Can be</p><p num="0010"> Acts as a conductive element, eg, a vertical connection extending upward from a conductive pad on the substrate Various package structures incorporating wire bonds are disclosed herein. Such a w Earbonds are package-on with the ultra-small electronic package resting on the surface of the dielectric seal. It can be used when making a package electrical connection. In addition, an ultra-compact electronic package Various embodiments of methods for making cages or microelectronic assemblies are disclosed herein. To.</p><p num="0011"> Therefore, the method of forming an ultra-small electronic package according to one aspect of the present invention is a) Metal wire segments with a given length from the capillary of the bonding tool Steps to send out and b) A part of the metal wire that is a step in using the bonding tool. It couples to a conductive element that is exposed on the first surface of the substrate, thereby on the conductive element. To form the base of the wire bond, with the steps to use, c) In the step of fixing a part of the wire in the bonding tool, d) Cut the metal wire at a location between the fixed portion and the base. A step that at least partially defines the end face of the wire bond with the base. A cutting step in which the edge surface of the wire bond is defined between the end surface and the end surface. e) A step of repeating step (a) to step (d), which is a plurality of steps of the substrate. Repeated steps of forming a plurality of wire bonds to the conductive element, e) After that, it is a step of forming a dielectric sealing layer that overlaps the surface of the substrate. The sealing layer is formed by at least a part of the surface of the substrate and a part of the wire bond. The wire, which is formed to cover the wire so as not to be covered by the sealing layer. The wire bond by at least one part of the end face or edge face of the bond Steps to form, where the unsealed part of is defined, Can be included.</p><p num="0012"> Therefore, according to one aspect of the present invention, a metal wire segment having a predetermined length is formed. It can be sent out from the capillary of the winding tool. With a bonding tool , A portion of the metal wire can be coupled to an exposed conductive element on the first surface of the substrate. it can. Such bonding forms a wire bond base on the conductive element. Can be done. After forming a bond with the conductive element, a part of the wire can be fixed. Wear. A portion of the fixed wire can be present within the bonding tool. Fixed The metal wire can be cut at the place between the cut part and the base, and the wire is cut. By doing so, the end face of the wire bond can be defined at least partially. Be The edge surface of the wire bond can be defined between the base and the end face. Repeat the above In return, a plurality of wire bonds can be formed on the plurality of conductive elements of the substrate. That Later, an overlapping dielectric encapsulating layer can be formed on the surface of the substrate. The sealing layer is the surface of the substrate It can be formed so as to cover at least a part of the surface and a part of the wire bond. .. By at least one part of the end face or edge face that is not covered by the sealing layer The unsealed portion of the wire bond can be defined.</p><p num="0013"> In one example, the metal wire can only be partially cut. A part of the wire The bonding tool can be kept away from the surface of the substrate while remaining fixed. Like that In a process, the wire can be broken at the location of the cut. Notch and The end face can be formed by disconnection.</p><p num="0014"> In one example, the notch is in a direction substantially perpendicular to the edge surface of the wire bond. It can be made to completely penetrate the ear segment. By the notch, The end face of the ear bond can be formed.</p><p num="0015"> In one example, at least one microelectronic device could overlap the first surface of the substrate. Wear. The substrate can have a first region and a second region, and the microelectronic device is the first. It can be located within the region, for example, on top of the first region. Conductive elements Located in the second region, for example, as a conductive element exposed on the first surface in it. can do. Conductive devices are electrically connected to at least one microelectronic device be able to. The dielectric encapsulating layer is the first surface of the substrate in at least the second region of the substrate. It can be formed to overlap on top of, but in the first and second regions the first It can also be overlaid on at least a portion of the surface.</p><p num="0016"> In one example, the package is such that the first wire bond of the wire bonds has the first signal potential. The second wire bond of the wire bonds is the first signal power. It can be configured to carry a second signal potential that is different from the position at the same time. Wear.</p><p num="0017"> In one example, the metal wire segment uses a laser mounted on a bonding tool. Can be cut off. In such an example, the capillary of the bonding tool is The plane of the capillary through which the ear segment is delivered can be defined. Bo Wire segment positioned between that surface of the winding tool and the base of the wire bond The laser is on the bonding tool so that the cutting beam can be directed to the location of the laser. Can be attached to or with a bonding tool.</p><p num="0018"> In one example, the bonding tool is the cable that the wire segment passes through as it is delivered. Capillaries that define the plane of the capillary can be included. Capillaries open on their side walls Can include a mouth and the cutting beam is positioned within the capillary through its opening The laser is also on the bond so that it can reach the location of the wire segment. Can attach a laser along with bonding.</p><p num="0019"> In one example, the laser should be one of CO2, Nd: YAG or Cu vapor lasers. Can be done.</p><p num="0020"> In one example, the metal wire can be cut using a cutting edge that extends within the capillary. it can. In one example, the cutting edge is on the wall of the capillary located opposite the wire segment. It can extend in the direction you are heading. In one example, the metal wire has this cutting edge as the first Cutting edge in combination with a second cutting edge extending within the capillary as the cutting edge Can be cut using. The second cutting edge is located on the opposite side of the first cutting edge You can decide.</p><p num="0021"> In one example, the capillary defines the plane through which the wire segment can be delivered. can do. The metal wire has a first cutting edge and a second cutting edge that are located opposite each other. It can be cut using a cutting tool that has a di. That side of the bonding tool and the wai You can cut the wire where it is positioned between it and the base of the yabond. As such, the cutting tool is mounted on or with the bonding tool. Can be</p><p num="0022"> An example of such a method can include positioning the stencil above the substrate. The stencil can have a plurality of openings therein, the openings having few conductive elements. Overlay at least part of it, exposing at least part of it. The opening is the first above the substrate Each edge positioned at a height of 1 can be defined. Wire segment Cuts by moving the wire laterally against the edge of the stencil opening Can be</p><p num="0023"> The method for producing an ultra-small electronic package according to one aspect of the present invention is the first surface and the like. Position the stencil above the processing unit containing the substrate with a second surface away from it Can include doing. Ultra-small electronic devices can be mounted on the first surface of the substrate To. A plurality of conductive elements can be exposed on the first surface. In one example, conductive At least some of the devices can be electrically connected to microelectronic devices. Ste The pencil can have multiple openings in it, the openings being less of conductive elements. Also overlaps a part, exposing at least that part. The opening is the first above the substrate Each edge positioned at height can be defined.</p><p num="0024"> According to such an embodiment, the method extends a predetermined length beyond the plane of the capillary. Capillary of metal wire bonding tool to define metal wire segment Can include forming wire bonds by processes involving sending out from To. A part of a wire segment is joined to one of a plurality of conductive elements to form a conductive element. A wire bond base can be formed. Wai against the edge of the stencil opening Ya move laterally, by disconnecting the wire bonds from the rest of the wire, gold At least part of a genus wire segment, another part of the wire connected to that segment Can be sheared from. Shearing of metal wires can define the end faces of wire bonds The wire bond can have an edge surface that extends between the base and the end face. As above, Feeding from metal wires, joining, and shearing metal wires are multiple. One or more openings in the stencil to form multiple wire bonds on the conductive element Can be repeated multiple times using the unit.</p><p num="0025"> In one example of such a method, a dielectric encapsulating layer can be formed on the unit during processing. The sealing layer should at least partially cover the first surface and a portion of the wire bond. It is formed. At least the end or edge faces of the wire bond that are not covered by the sealing layer One portion can define the unsealed portion of the wire bond.</p><p num="0026"> In one example of such a method, it extends beyond the plane of the capillary and remains after shearing of the metal wire. The portion of the metal wire that is long enough to form at least the base of the subsequent wire bond Can consist of.</p><p num="0027"> In one example of that method, the stencil is the direction of the axis extending from one of the holes, eg For example, the thickness can be defined in the vertical direction away from the surface of the substrate. Of the holes Some or all have a consistent or constant diameter throughout the thickness of the stencil Can be done.</p><p num="0028"> In one example of that method, the stencil is the shaft of one of the holes or openings. The thickness can be defined in a direction, eg, in the vertical direction away from the surface of the substrate. Place some or all of the holes or openings in the stencil on the exposed edges in the openings From the first width or small diameter to the second in the hole or opening, elsewhere near the substrate Can be tapered to large widths or large diameters.</p><p num="0029"> In one example, the stencil has a first thickness in the direction of substrate thickness and is one of the substrates. Can include edge members extending along a plurality of edges. The first thickness is the first height Can be defined. The central part can include a hole or opening, depending on the edge member Can be surrounded. The central portion can have an outer surface facing away from the substrate. Outside The faces can be placed at a first height. The central part should have a thickness less than the first thickness Can be done.</p>
0030<figref num="1">It is a figure which shows the ultra-small electronic package by one Embodiment of this invention.</figref><figref num="2">It is a top view of the ultra-small electronic package of FIG.</figref><figref num="3">It is a figure which shows the ultra-small electronic package by the alternative embodiment of this invention.</figref><figref num="4">It is a figure which shows the ultra-small electronic package by the alternative embodiment of this invention.</figref><figref num="5">It is a figure which shows the ultra-small electronic package by the alternative embodiment of this invention.</figref><figref num="6">It is a figure which shows the laminated micro electronic assembly including the micro electronic package by one Embodiment of this invention.</figref><figref num="7">It is a figure which shows the ultra-small electronic package by the alternative embodiment of this invention.</figref><figref num="8A">It is a detailed view of a part of an ultra-small electronic package according to various embodiments of the present invention.</figref><figref num="8B">It is a detailed view of a part of an ultra-small electronic package according to various embodiments of the present invention.</figref><figref num="8C">It is a detailed view of a part of an ultra-small electronic package according to various embodiments of the present invention.</figref><figref num="8D">It is a detailed view of a part of an ultra-small electronic package according to various embodiments of the present invention.</figref><figref num="8E">It is a detailed view of a part of an ultra-small electronic package according to various embodiments of the present invention.</figref><figref num="9">FIG. 3 is a detailed view of a portion of an ultra-small electronic package according to an alternative embodiment of the present invention.</figref><figref num="10A">It is a detailed view of a part of an ultra-small electronic package according to various embodiments of the present invention.</figref><figref num="10B">It is a detailed view of a part of an ultra-small electronic package according to various embodiments of the present invention.</figref><figref num="10C">It is a detailed view of a part of an ultra-small electronic package according to various embodiments of the present invention.</figref><figref num="10D">It is a detailed view of a part of an ultra-small electronic package according to various embodiments of the present invention.</figref><figref num="11">It is a figure which shows the ultra-small electronic package in various manufacturing steps of the ultra-small electronic package by one Embodiment of this invention.</figref><figref num="12">It is a figure which shows the ultra-small electronic package in various manufacturing steps of the ultra-small electronic package by one Embodiment of this invention.</figref><figref num="13">It is a figure which shows the ultra-small electronic package in various manufacturing steps of the ultra-small electronic package by one Embodiment of this invention.</figref><figref num="14">It is a figure which shows the ultra-small electronic package in various manufacturing steps of the ultra-small electronic package by one Embodiment of this invention.</figref><figref num="15">It is a figure which shows the ultra-small electronic package in the manufacturing step by the alternative embodiment of this invention.</figref><figref num="16A">FIG. 3 is a detailed view of a portion of an ultra-small electronic package during various manufacturing steps of an ultra-small electronic package according to an embodiment of the present invention.</figref><figref num="16B">FIG. 3 is a detailed view of a portion of an ultra-small electronic package during various manufacturing steps of an ultra-small electronic package according to an embodiment of the present invention.</figref><figref num="16C">FIG. 3 is a detailed view of a portion of an ultra-small electronic package during various manufacturing steps of an ultra-small electronic package according to an embodiment of the present invention.</figref><figref num="17A">FIG. 5 is a detailed view of a portion of an ultra-small electronic package during various manufacturing steps of the ultra-small electronic package according to an alternative embodiment of the present invention.</figref><figref num="17B">FIG. 5 is a detailed view of a portion of an ultra-small electronic package during various manufacturing steps of the ultra-small electronic package according to an alternative embodiment of the present invention.</figref><figref num="17C">FIG. 5 is a detailed view of a portion of an ultra-small electronic package during various manufacturing steps of the ultra-small electronic package according to an alternative embodiment of the present invention.</figref><figref num="18">It is a top view from the top of the micro electronic package according to the alternative embodiment of the present invention.</figref><figref num="19">It is a top view of a part of an ultra-small electronic package according to an alternative embodiment of the present invention.</figref><figref num="20">It is a top view of the ultra-small electronic package according to a further alternative embodiment of the present invention.</figref><figref num="21">It is a front view of the ultra-small electronic package of claim 20.</figref><figref num="22">It is a front view of the ultra-small electronic package according to a further alternative embodiment of the present invention.</figref><figref num="23">It is a figure which shows the system by the further embodiment of this invention.</figref><figref num="24">It is a front view of the ultra-small electronic package according to a further alternative embodiment of the present invention.</figref><figref num="25">It is a front view of the ultra-small electronic package according to a further alternative embodiment of the present invention.</figref><figref num="26">It is a top view of the ultra-small electronic package according to the modified form of the embodiment of FIG. 25.</figref><figref num="27">It is a front view of the ultra-small electronic package according to a further alternative embodiment of the present invention.</figref><figref num="28">It is a top view of the ultra-small electronic package according to the modified form of the embodiment of FIG. 27.</figref><figref num="29">FIG. 5 is a cross-sectional view of an ultra-small electronic package according to a further embodiment.</figref><figref num="30">It is sectional drawing of the ultra-small electronic package by another embodiment.</figref><figref num="31A">It is sectional drawing which shows the example of the embodiment of the ultra-small electronic package according to the further embodiment.</figref><figref num="31B">It is sectional drawing which shows the example of the embodiment of the ultra-small electronic package according to the further embodiment.</figref><figref num="31C">It is sectional drawing which shows the example of the embodiment of the ultra-small electronic package according to the further embodiment.</figref><figref num="32A">It is a figure which shows the part of the machine which can be used in forming various wire bond vias in various stages of the method by another embodiment of this disclosure.</figref><figref num="32B">It is a figure which shows the part of the machine which can be used in forming various wire bond vias in various stages of the method by another embodiment of this disclosure.</figref><figref num="33">It is a figure which shows the part of the machine which can be used in forming various wire bond vias according to the method by another embodiment of this disclosure.</figref><figref num="34A">It is a figure which shows various forms of the apparatus which can be used in the method of making a wire bond by one Embodiment of this disclosure.</figref><figref num="34B">It is a figure which shows various forms of the apparatus which can be used in the method of making a wire bond by one Embodiment of this disclosure.</figref><figref num="34C">It is a figure which shows various forms of the apparatus which can be used in the method of making a wire bond by one Embodiment of this disclosure.</figref>
0031Next, referring to the drawings, FIG. 1 shows the microelectronic assembly 1 according to an embodiment of the present invention. 0 is shown. Similar numbers are used in the drawings to indicate a similar mechanism. In Figure 1 Embodiments are semiconductor chip assemblies used in computers or other electronic applications. It is an ultra-small electronic assembly in the form of a packaged ultra-small electronic device such as.
0032The microelectronic assembly 10 of FIG. 1 is a substrate having a first surface 14 and a second surface 16. Equipped with 12. The substrate 12 is usually in the form of a dielectric element that is substantially flat. Dielectric The element can be in the form of a sheet and can be thin. In certain embodiments , Dielectric devices are not limited, but polyimide, polytetrafluoroethylene ("PTF" E "), epoxy, epoxy glass, FR-4, BT resin, thermoplastic or thermosetting plus Can include one or more layers of an organic dielectric material such as a tic material or a composite dielectric material To. The first surface 14 and the second surface 16 are preferably substantially parallel to each other, and the table The thickness of the substrate 12 is defined by a certain distance perpendicular to the surfaces 14 and 16. Thickness of substrate 12 Is preferably within a thickness range that is typically acceptable for this application. One Embodiment Then, the distance between the first surface 14 and the second surface 16 is about 25 μm and 500 μm. between. For the purposes of this discussion, the first surface 14 is located opposite or remote from the second surface 16. It can be explained as being fixed. Such explanations are described herein. Any other relative position of such an element, which refers to the vertical or horizontal position of the element used in It is given and limited only for the purpose of explanation so as to match the position of the element in the drawing together with the explanation of. It's not something.
0033In a preferred embodiment, the substrate 12 is also divided into a first region 18 and a second region 20. Is considered to be. The first region 18 is inside the second region 20 and covers the central portion of the substrate 12. Includes and extends outward from there. The second region 20 substantially surrounds the first region 18 and From there, it extends outward to the outer edge of the substrate 12. In this embodiment, certain properties of the substrate itself are The two areas are not physically divided, but these areas apply to or apply to that area. Delimited for the purposes discussed herein with respect to the processing or features contained within that area. ing.
0034The ultra-small electronic device 22 is attached to the first surface 14 of the substrate 12 in the first region 18. Can be done. The ultra-small electronic device 22 can be a semiconductor chip or another equivalent device. Wear. In the embodiment of FIG. 1, the microelectronic device 22 is a conventional or "face-up" (face-up). Attached to the first surface 14 in a form known as the "face-up)" form. Such a fruit In the embodiment, the wire lead wire 24 is used to put the ultra-small electronic device 22 on the first surface 14. It can be electrically connected to some of the plurality of conductive elements 28 that are exposed. The wire lead 24 also contacts a trace (not shown) or other conductive mechanism within the substrate 12. A trace (not shown) or other conductive mechanism that can be fitted is then the conductive element 28. Connected to.
0035Each of the conductive elements 28 is exposed on the first surface 14 of the substrate 12. Includes "contact" or pad 30. As used in this description, the conductive element induces Described as "exposed at" the surface of another element with an electrical structure When it is, it is that the conductive structure is attracted from the outside of the dielectric structure towards the surface of the dielectric structure. Contact the theoretical point that moves in the direction perpendicular to the surface of the electrical structure Indicates that it is available for use. Therefore, the terminals or terminals exposed on the surface of the dielectric structure Other conductive structures can project from these surfaces or are flush with these surfaces Can be on the surface, or dents, holes or depressions in the dielectric with respect to these surfaces Can be exposed through. The conductive element 28 can be a flat and thin element and conduct In the electrical element 28, the pad 30 is exposed on the first surface 14 of the substrate 12. one In embodiments, the conductive elements 28 can be substantially circular and, between each other, Alternatively, it can be interconnected to the microelectronic device 22 by a trace (not shown). The conductive element 28 can be formed at least within the second region 20 of the substrate 12. Addition Thus, in certain embodiments, the conductive element 28 may also be formed within the first region 18. it can. Such an arrangement configuration is also known as a "flip-chip" configuration. This is especially useful when mounting the ultra-small electronic device 122 (Fig. 3) on the substrate 112. Therefore, in the flip chip configuration, the contact on the ultra-small electronic element 122 is an ultra-small electronic element. Conductivity in the first region 118, such as by solder bumps 126 positioned below 122 It can be connected to the sex element 128. In another configuration, as shown in Figure 22, the microelectric The child element 622 is mounted downward on the substrate 612 and is outside, such as the surface 616 of the substrate 612. Wire leads 624 extending over the surface facing the chip to the conductive mechanism on the chip Be connected in an airy manner. In the illustrated embodiment, the wire lead 625 has an opening in the substrate 612. It can pass through section 625 and be sealed by overmold 699.
0036In one embodiment, the conductive element 28 is for copper, gold, nickel, or such applications. Formed from solid metallic materials such as other acceptable materials. Other materials include copper, gold and nickel , Or various alloys including one or more of combinations thereof.
0037At least some of the conductive elements 28 are exposed on the second surface 16 of the substrate 12. It can be interconnected with a corresponding second conductive element 40, such as a conductive pad. Such interconnects can be made of the same material as the conductive elements 28 and 40. Completed with vias 41 formed in substrate 12 that can be lined or filled with metal Can be made. Optionally, the conductive element 40 is traced on the substrate 12 It can also be interconnected.
0038The ultra-small electronic assembly 10 has a small number of conductive elements 28 such as a pad 30 of the conductive element 28. It further includes a plurality of wire bonds 32 bonded to at least some. Wire bond 32 is that Joined to the conductive element 28 at the base 34, from the respective base 34 and substrate 12 It can extend to a distant free end 36. The end 36 of the wire bond 32 is an ultra-compact electric In the child element 22 or the ultra-small electronic assembly 10, and eventually in the ultra-small electronic element 22 Not electrically connected or otherwise joined to any other conductive mechanism to be connected It is considered free in terms of points. In other words, the free end 36 is the outside conductivity of assembly 10. Direct or indirect to the sexual mechanism through solder balls or other mechanisms discussed herein. It can be used to make an electrical connection to. The end 36 is positioned in place, for example by the sealing layer 42. It is up to you to be held in or otherwise joined or electrically connected to another conductive mechanism. Unless such a mechanism is electrically connected to the microelectronic device 22, the ends are described herein. It does not mean that it is not "free". Conversely, base 34 is described herein. As described above, it is not free because it is directly or indirectly electrically connected to the ultra-small electronic element 22. Figure 1 As shown in, the base 34 is substantially rounded in shape and is between the base 34 and the end 36. It can extend outward from the edge surface 37 of the wire bond 32 defined by. base 34 specific sizes and shapes of the material used to form the wire bond 32 The desired strength of the connection between the ip, wire bond 32 and the conductive element 28, or wire bon It can vary depending on the particular process used to form the de 32. Wai An exemplary method of making Yabond 28 is U.S. Pat. No. 7,391,12 to Otremba. No. 1 and U.S. Patent Application Publication No. 2005/0095835 (a form of wire bondin) Describes a wedge bonding procedure that can be considered to be All of these disclosures, by reference, are part of this specification in their entirety. Eggplant. The wire bond 32 is, additionally or optionally, separated from the wire bond 32. Bonded to the conductive element 40 exposed on the second surface 16 of the substrate 12 Alternative embodiments are possible.
0039Wirebond 32 is made from conductive materials such as copper, gold, nickel, solder or aluminum. Can be made. Further, the wire bond 32 is a conductive material such as copper or aluminum. A combination of materials, for example, a coating applied over the core of the material. Can be made from. The coating is a second conductive material such as aluminum, nickel, etc. Can consist of material. Alternatively, is the coating an insulating material such as an insulating jacket? Can be In one embodiment, the wire used to form the wire bond 32 Ears have a thickness of about 15 μm to about 150 μm, that is, the thickness across the length of the wire. Can have only. Other embodiments, including embodiments in which wedge bonding is used. In the form, the wire bond 32 can have a thickness of up to about 500 μm. general In addition, wire bond is a conductive element using a special device known in the art. 28, formed on conductive elements such as pads and traces. The tip of the wire segment is heated And pressed against the receiving surface to which the wire segments are bonded, usually on the surface of the conductive element 28. Form a ball or ball-shaped base 34 to be joined to the surface. Desired to form a wire bond A wire segment of length is pulled out of the bonding tool and then bonded The tool can cut the wire bond to the desired length. For example, Alumini Wedge bonding that can be used to form Umm wire bonds is a surface The heated portion of the wire accepts to form a wedge that is approximately parallel to It is a process that is pulled over the surface. Wedge-bonded wire bonds , Then bend upwards as needed, extend to the desired length or position, then cut be able to. In certain embodiments, the wires used to form the wire bond are , Can have a cylindrical cross section. Otherwise, wire bond or wedge Wires to be bonded Wires delivered from the tool to form a bond are examples. For example, it can have a polygonal cross section such as a rectangle or a trapezium.
0040The free end 36 of the wire bond 32 has an end face 38. End face 38 has few contacts Also partly shaped by an array formed by each end face 38 of multiple wire bonds 32 Can be done. Figure 2 shows an array of these contacts formed by the end faces 38. An exemplary pattern for is shown. Such an array can be formed in an area array configuration. And its variants can be implemented using the structures described herein. This Such an array can be a microelectronic assembly 10 on a printed circuit board ("PCB") or other. Another microelectron, such as a packaged microelectronic device (an example of which is shown in Figure 6). It can be used to make electrical and mechanical connections to the structure. Such a laminated arrangement configuration Then, the wire bond 32 and the conductive elements 28 and 40 each have different signal potentials. Having multiple electronic signals carried through them, different signals are different within a single laminate It can be made possible to be processed by an ultra-small electronic device. Solder block 52 Such a laminate by electrically and mechanically attaching the end face 38 to the conductive element 40, etc. It can be used to interconnect microelectronic assemblies within.
0041The microelectronic assembly 10 further includes a sealing layer 42 formed from a dielectric material. Figure 1 In the embodiment of, the sealing layer 42 is commonly made up of microelectronic devices 22 or conductive devices 28. It is formed by covering a portion of the first surface 14 of the substrate 12 which is not coated or occupied. Similarly The sealing layer 42 is a pad of conductive element 28 that is not normally covered by wire bond 32. It is formed so as to cover the portion of the conductive element 28 including the element 30. The sealing layer 42 is also a microelectron A wire bore that includes at least part of element 22, base 34, and edge surface 37 of the wire bond. The engine 32 can be substantially coated. Part of the wire bond 32 is on the sealing layer 42 Thus it can remain uncoated, which can also be referred to as unsealed. So This causes the wire bond to electrically connect to a feature or element located outside the sealing layer 42. Will be made available to. In one embodiment, the end face 38 of the wire bond 32 is the sealing layer 42. It remains uncoated by the sealing layer 42 within the main surface 44. End face 38 with sealing layer 42 In addition to or as an alternative to leaving it uncovered, part of the edge surface 37 Other embodiments are possible in which is not covered by the sealing layer 42. In other words, the sealing layer 42 Is part of a wire bond 36 such as an end face 38, an edge face 37, or a combination of the two. Except for minutes, it is possible to cover all of the microelectronic assembly 10 on the first surface 14. Wear. In the embodiment shown in the figure, the surface of the sealing layer 42, such as the main surface 44, is the first table of the substrate 12. It can be separated from the surface 14 by a distance long enough to cover the microelectronic device 22. .. Therefore, the end 38 of the wire bond 32 is coplanar with the surface 44. The embodiment of Swertia japonica 10 is a wire bond 32 and a flip that are higher than the microelectronic device 22. Will include any solder bumps below for chip connection. But on the sealing layer 42 Other configurations are possible. For example, the sealing layer may have multiple surfaces of different heights. Can be done. In such a configuration, the surface 44 on which the end 38 is positioned is ultra-compact. The electronic device 22 may be higher or lower than the upward facing surface, which is positioned below it. it can.
0042The sealing layer 42 protects the microelectronic assembly 10, especially the other elements in the wire bond 32. Play a role. This can result in damage from testing the structure, or other microelectricity. Enables stronger structures that are less susceptible to damage during transfer or assembly to child structures Become. The sealing layer 42 is described in U.S. Patent Application Publication No. 2010/0232129. It can be formed from a dielectric material having insulating properties such as a dielectric material. This patent document Shall form part of this specification by reference.
0043FIG. 3 shows an embodiment of a microelectronic assembly 110 having a wire bond 132. .. This wire bond 132 has an end 136 that is not located directly above each base 34 Have. That is, it shall extend in two lateral directions so as to substantially define a plane. Considering the first surface 114 of the substrate 112, of the end 136 or the wire bond 132 At least one wire bond 132 of these from the corresponding lateral position of the base 134 Displaced in at least one lateral direction. As shown in FIG. 3, the wire bond 132 , Substantially straight along the vertical axis of the wire bond 132, as in the embodiment of FIG. The vertical axis is angled at an angle of 146 with respect to the first surface 114 of the substrate 112. Be kicked. The cross section of FIG. 3 shows an angle of 146 through a first plane perpendicular to the first surface 114. As only, the wire bond 132 also has both its first plane and its first surface 114. It can be angled with respect to the first surface 114 in another plane perpendicular to the direction. These The angle can be substantially equal to or different from angle 146. That is, base 13 The displacement of the end 136 with respect to 4 can be in two lateral directions, each in each of those directions. It can be the same distance or different distances in these directions.
0044In one embodiment, the various wire bonds of the wire bond 132 are the entire assembly 110. It can be displaced by different amounts in different directions through. Such an arrangement is Asen Buri 110 is configured to differ at the level of surface 144 compared to the level of substrate 12. Allows you to have an array. For example, the array is the first surface 114 of the substrate 112. More on the surface 144 than on the level of the first surface 114 compared to that in It can cover a small whole area or have a smaller pitch. In addition, how many Some wirebonds 132 are a product of packaged microelectronic devices of different sizes. End 136 positioned above microelectronic device 122 to accommodate a layered configuration Can have. In another example shown in FIG. 19, the wire bond 132 is a single wire. The end face 138A of bond 132A is substantially on the base 134B of another wire bond 132B The end face 138B of the wire bond 132B is positioned elsewhere. It can be configured as follows. Such an arrangement is the corresponding controller on the second surface 116. Relative to the contact end face 138 within the array of contacts compared to the position of the tact array It can be referred to as changing the position. Within such an array, the contact end face Relative position can be changed as desired depending on the application of the microelectronic assembly or other requirements. Can fluctuate.
0045In a further example shown in FIG. 30, the base 134 is in the first pattern with a certain pitch. The wire bond 132 can be placed so that it can be placed in place. Including end face 138 The unsealed portion 139 of the mud is attached to the conductive element 128 by a wire bond. Sealing layer 14 with a minimum pitch greater than the minimum pitch between each adjacent base 134 Wires so that they can be placed in a pattern at positions on the main surface 144 of 2 Bond 132 can be configured. Therefore, adjacent wais on the sealing surface 146 The minimum pitch between yabonds is between the 128 conductive elements on the board to which the wire bond is attached. It can be larger than the corresponding minimum pitch.
0046To achieve this, the wire bond can be angled, as shown in Figure 30. Can, or end face 138, be one or more lateral from base 134 as discussed above Curve the wire bond so that it is displaced in the direction, for example, as shown in FIG. Can be done. As further shown in FIG. 30, the conductive element 128 and the end face 138 are respectively. Can be placed in one row or column, and the lateral displacement of the end face 138 in one row is from within another row. Can be made larger. To achieve this, the wire bond 132 can be, for example, substrate 1 Different angles 146A and 146B can be made with respect to the surface 116 of the twelve.
0047FIG. 4 shows a wire bond 23 with an end 236 in a lateral position displaced with respect to the base 234. A further embodiment of the microelectronic subassembly 210 having 2 is shown. In the embodiment of FIG. By including the curved portion 248 within the wire bond 132 , Achieve this lateral displacement. The curved portion 248 is an additional step during the wire bond forming process. It can be formed in the loop, for example the wire portion is pulled out to the desired length. Can be brought in between. This step is available which can include the use of a single machine It can be carried out using a competent wire bonding device.
0048The curved portion 248 takes various shapes as needed and is the end 23 of the wire bond 232. 6 desired positions can be achieved. For example, the curved portion 248 has the shape shown in FIG. Is formed as an S-shaped curve of various shapes such as a smoother shape (such as the shape shown in Fig. 5). be able to. In addition, the curved portion 248 is located closer to the base 234 than the end 236. And vice versa. The curved portion 248 is also in the form of a spiral or loop. Can be or composite containing curves in multiple directions or different shapes or features Can be a body.
0049FIG. 5 shows different shapes that result in different relative lateral displacements between the base 334 and the end 336. Further of the micro electronic package 310 with a combination of wire bonds 332 with An exemplary embodiment is shown. Some of the wire bond 332A are virtually straight and The end 336A is located above each base 334A, while the other wire bond 3 32B includes a slightly curved portion 348B, between the end 336B and the base 334B. It causes some relative lateral displacement. In addition, some wire bond 332C is sweep type Includes curved portion 348C with a shape, laterally from the associated base 334C, at the end 334B It results in an end 336C that is displaced over a distance. Figure 5 also shows these wires. Shown an exemplary pair of 332Ci and 332Cii, wire bond 332Ci and 33 2Cii are bases 334Ci and 334 positioned in the same row of board level array Cii and the end 336Ci positioned in different rows of the corresponding surface level array And has 336 Cii.
0050Wire bond 3 configured not to be covered by sealing layer 342 on its side 47 A further variant of 32D is shown. In the illustrated embodiment, the free end 336D is covered. Not, but additionally or additionally, a portion of the edge surface 337D is provided by the sealing layer 342. Can not be covered. These configurations are ultra-small due to electrical connections to the appropriate mechanism. To ground the mold electronic assembly 10 or to arrange it laterally to the micro electronic assembly 310 It can be used to make mechanical and electrical connections to other installed mechanisms. In addition, the figure 5 defines a recessed surface 345 that is located closer to the substrate 12 than the main surface 342. Seals that are etched, molded, or otherwise formed to Shows the area of layer 342. One or more wire bonds, such as wire bond 332A, are recessed It may not be covered within the area along the surface 345. An exemplary embodiment shown in FIG. In the state, a part of the end face 338A and the edge face 337A is covered with the sealing layer 342. Absent. In such a configuration, the solder can be used to connect to another conductive element using a solder ball or the like. In addition to joining to end face 338, wicking along edge face 337A and edge It can be provided by allowing it to be joined to surface 337A. Wirebon A portion of the dowel may not be covered by the sealing layer 342 along the recessed surface 345. Other configurations are possible, the configuration being substantially coplanar with the recessed surface 345. Includes certain configurations or other configurations shown herein with respect to any other surface of the sealing layer 342. same Thus, a portion of the wire bond 332D is covered by a sealing layer 342 along the side surface 347. Other configurations that are not are the same as those discussed elsewhere herein with respect to the deformation of the main surface of the encapsulating layer. Can be like.
0051FIG. 5 shows a microelectric device having two microelectronic devices 322 and 350 in an exemplary arrangement configuration. The child assembly 310 is further shown, and in its arrangement configuration, the microelectronic device 350 is a microelectric device. It is laminated upward on the child element 322. In this arrangement, the lead wire 324 is an ultra-compact electric machine. It is used to electrically connect the child element 322 to the conductive mechanism on the substrate 312. Various leads The wire electrically contacts the microelectronic element 350 to various other features of the microelectronic assembly 310. Used to continue. For example, in the lead wire 380, the ultra-small electronic element 350 is mounted on the substrate 31. Electrically connected to the conductive mechanism of 2, the lead wire 382 connects the ultra-small electronic element 350 to the ultra-small electronic element. Electrically connect to child 322. In addition, the various wire bonds and structures of wire bond 332 are similar. A similar wire bond 384 is electrically connected to the microelectronic device 350. Used to form the contact surface 386 on the surface 344 of layer 342. This is a seal From above the stop layer 342, direct the mechanism of another microelectronic assembly to the microelectronic element 350. Can be used to make electrical connections. Such connected to the ultra-small electronic device 322 Leads may also be included, which means that these microelectronic devices are their microelectric devices. Including the case where it exists without the second ultra-small electronic element 350 fixed to the child element. Aperture (shown) Can be formed within the sealing layer 342, the opening of which is the surface 344 of the sealing layer 342. Extends from, for example, to a point along lead 380, thereby placing on the outside of surface 344. Access to lead 380 for electrical connection to lead 380 by placing elements Provide A similar opening is a wire bond 332 at a point away from its own end 336C Can be formed on top of C, any other lead or wire bond 332 To. In these embodiments, the end 336C can be positioned below the surface 344. The opening provides only access for electrical connection to the end 336C.
0052FIG. 6 shows a stacked package of microelectronic assemblies 410 and 488. These In the placement configuration, the solder mass 452 attaches the end face 438 of assembly 410 to assembly 488. It is electrically and mechanically connected to the conductive element 440. Laminated package further assembles Can include, and finally on PCB490 etc. for use in electronic devices Can be attached to contact 492. In such a stacked layout configuration, the wire bon The plurality of conductive elements 432 and the conductive element 430 have different signal potentials through the two. The different signals carry the electronic signals of the ultra-small electronic device 422 or ultra-small in a single laminate. It is possible to enable processing by different microelectronic devices such as type electronic devices 489. it can.
0053In the exemplary configuration of FIG. 6, the wire bond 432 is configured to have a curved portion 448. Thus, at least some of the ends 436 of the wire bond 432 are microelectrons. It extends within an area that overlaps the main surface 424 of the element 422. These areas are ultra-small Defined by the outer circumference of the electronic device 422 and extending upward from the microelectronic device 422. Can be done. An example of such a configuration is shown in FIG. 18 facing the first surface 414 of the substrate 412. As shown by, the wire bond 432 rests on the rear main surface of the microelectronic device 422 and is a microelectric device. The child element 422 is a flip-chip bone on the substrate 412 at the front surface 425 of the ultra-small electronic element 422. Be ding. In another configuration (Figure 5), the microelectronic device 422 points upwards to substrate 312. Can be mounted with, front 325 does not face board 312, at least one wirebon The de 336 overlaps the front surface of the ultra-small electronic device 322. In one embodiment, such a wai The Yabond 336 is not electrically connected to the microelectronic device 322. Bondin on board 312 The wire bond 336 to be joined also overlaps the front or back surface of the microelectronic device 350. be able to. The embodiment of the microelectronic assembly 410 shown in FIG. 18 is a conductive element 42. 8 are arranged in a pattern forming the first array, in which the conductive element 428 Are arranged in rows and columns surrounding the microelectronic element 422, and are defined between the individual conductive elements 428. Can have a pitch of. Wire bond 432 is each of wire bond 432 Base 434 follows the pattern of the first array composed of conductive elements 428 It is joined to the conductive element 428. However, the wire bond 432 is a wire bond 43 Each end 436 of 2 is arranged in a different pattern according to the second array configuration. Is configured to be able to. In the illustrated embodiment, the pitch of the second array is the first a. Can be different from the pitch of the rays, and in some cases finer than the pitch of the first array There can be. However, in other embodiments where the pitch of the second array is greater than that of the first array. The state or conductive elements 428 are not arranged in a predetermined array, but of wire bond 432. Other embodiments are possible in which the ends 436 are arranged in a predetermined array. Furthermore, it is conductive Element 428 can consist of a set of arrays that are positioned throughout the substrate 412. The wire bond 432 can be a set of arrays or a single array with different ends 436. It can be configured as follows.
0054FIG. 6 further shows the insulating layer 421 extending along the surface of the microelectronic device 422. Insulation Layer 421 is formed from a dielectric material or other electrically insulating material before forming a wire bond. can do. In the insulating layer 421, the ultra-small electronic element extends over the ultra-small electronic element. It is possible to prevent the wire bond 423 from coming into contact with any wire bond. In particular, the insulating layer 421 is an electrical short circuit between the wire bonds and the wire bond and the ultra-small electronic element 4 An electrical short circuit with 22 can be avoided. Thus, the insulating layer 421 is wire-bonded. Malfunction or possible due to unintended electrical contact between the 432 and the microelectronic device 422 Can help avoid damage.
0055The wire bond configurations shown in FIGS. 6 and 18 include, for example, the microelectronic assembly 488 and the ultra. In certain cases where the relative size of the small electronic device 422 is normally unacceptable, it is super The small electronic assembly 410 is another micro electronic assembly such as the micro electronic assembly 488. It can be made possible to connect to the computer. In the embodiment of FIG. 6, the microelectronic assembly As for the 488, some of the contact pads 440 are on the front surface of the ultra-small electronic element 422. Is sized to be in an array within an area smaller than the area of the rear surface 426. Wa An ultra-small electron array that has a substantially vertical conductive mechanism such as a pillar instead of the earbond 432. In the assembly, the direct connection between the conductive element 428 and the pad 440 is not possible. To. However, as shown in FIG. 6, a wire bond with a well-structured curved portion 448 The 432 is the electrical required between the microelectronic assembly 410 and the microelectronic assembly 488. The end 436 can be in a suitable position to make a gas connection. Such an arrangement configuration Can be used to make stacked packages, the micro electronic assembly 418 For example, a DRAM chip having a predetermined pad array, and an ultra-small electronic device. 422 is a logic chip configured to control a DRAM chip. By this Where where the wire bond 432 needs to make the desired connection with the DRAM chip Can have an end 436 that is also positioned in, so a single type of DRAM click Several different logics of various sizes, including sizes larger than the DRAM chip It can be made possible to be used with chips. In an alternative embodiment, the micro The electronic package 410 can be mounted on a printed circuit board 490 with a different configuration, The unsealed surface 436 of the wire bond 432 is electrically connected to the pad 492 of the circuit board 490. Is done. Further, in such an embodiment, another macroelectronic such as a modified form of package 488. Package 410 with solder balls 452 bonded to pad 440 Can be implemented above.
0056A further layout configuration for an ultra-small electronic package having a plurality of ultra-small electronic elements is shown in the figure. It is shown in 31A to 31C. These arrangement configurations are, for example, the wire bond arrangement shown in FIG. Used in relation to the configuration and in the stacked package layout configuration of Figure 6, which will be discussed further below. Can be done. Specifically, in FIG. 31A, the lower microelectronic element 1622 is attached to the substrate 1612. Shows the configuration of flip-chip bonding to conductive element 1628 on surface 1614. I will. The second microelectronic device 1650 is mounted upwards on top of the first microelectronic device 1622. It is mounted and connected to an additional conductive element 1628 through a wire bond 1688. Figure 31 In B, the first microelectronic device 1722 is mounted upward on the surface 1714 and the wirebone. The configuration in which the conductive element 1728 is connected to the conductive element 1728 through the 1788 is shown. Second ultra-small electronic device The 1750 faces the front of the first microelectronic device 1722 and the corresponding contours on the front. Through a pair of contacts 1726 of the second microelectronic device 1750, which is joined to the device. , Flip-chip mounted on the first microelectronic device 1722. First ultra-small electronic charge These contacts of the child 1722 also have the circuit pattern of the first microelectronic device 1722. Can be connected through, by some of the wire bonds 1788, board 17 It can be connected to the conductive element 1728 on 12.
0057In FIG. 31C, the first ultra-small electronic element 1822 and the second ultra-small electronic element 1850 are based. The arrangement configuration in which the plates 1812 are mounted side by side on the surface 1814 is shown. Ultra-small electronic devices (and One or both of the additional microelectronic devices) are upward or flip chips as described herein. It can be implemented in a configuration. Furthermore, the ultra-small electronic devices used in such an arrangement configuration Any microelectronic device can be on one or both of these microelectronic devices, or on a substrate. Can be connected to each other through circuit patterns on, or both, circuit patterns Electrically connects each conductive element 1828 to which the microelectronic element is electrically connected.
0058FIG. 7 shows FIG. 1 in which the redistribution layer 54 extends along the surface 44 of the sealing layer 42. A type of microelectronic assembly 10 is shown. As shown in Figure 7, the trace 58 is Electrically contacts the internal contact pad 61, which is electrically connected to the end face 38 of the earbond 32 Continuing, a contact that penetrates the substrate 56 of the redistribution layer 54 and is exposed on the surface 62 of the substrate 56. It extends to Topad 60. After that, a further ultra-small electronic assembly was made with a solder block or the like. Can be connected to contact pad 60. A structure similar to the redistribution layer 54 It can extend along the second surface 16 of the substrate 12 in a structure known as the out layer. Wear. The fanout layer allows the ultra-small electronic assembly 10 in the absence of that layer It becomes possible to connect to an array having a configuration different from the array of the conductive element 40 which was.
00598A-8E show the structure of the end 36 of the wire bond 32 in a structure similar to FIGS. 1-7. Or various configurations that can be realized in the structure near the end 36 thereof are shown. Figure 8A , The end 36 of the wire bond 32 protrudes above the facet 43 of the sealing layer in the cavity 64 As shown, the structure in which the cavity 64 is formed in a part of the sealing layer 42 is shown. Illustrated In one embodiment, the end face 38 is positioned below the main face 44 of the sealing layer 42 and is cavitation. The 64 is structured so that the end face 38 is exposed on the surface 44, and the electronic structure is on the end face. Allows you to connect. The end face 38 is substantially coplanar with the surface 44, or the surface 44 Other embodiments located above are also possible. Further, the cavity 64 is a cavity 6 Due to the sealing layer 42 in 4, the wire bond 32 edge near the end 36 of the wire bond 32 It can be configured so that the portion of the surface 37 is not covered. This will Solder connection from both the end face 38 and the uncovered portion of the edge face 37 near the end 36 Etc., the connection from the outside of the assembly 10 to the wire bond 32 can be performed. So A connection such as is shown in FIG. 8B, which is stronger to the second substrate 94 with the solder mass 52. A solid connection can be provided. In one embodiment, the cavity 64 is approximately below the surface 44. It can have a depth of 10 μm to about 50 μm and a width of about 100 μm to about 300 μm. can do. FIG. 8B has a structure similar to that of FIG. 8A, but the side wall 65 is tapered. Indicates the cavity to which is attached. In addition, FIG. 8B shows dew on the surface 98 of the substrate. In the contact pad 96 to be put out, the solder mass 52 electrically reaches the wire bond 32. A second microelectronic assembly 94 that is mechanically connected is shown.
0060Cavity 64 removes part of sealing layer 42 in the desired area of cavity 64 It can be formed by doing. This is laser etching, wet etching It can be accomplished by known processes including wrapping, wrapping, etc. Alternatively, seal In an embodiment in which layer 42 is formed by injection molding, the cavity 64 corresponds to the inside of the mold. It can be formed by including a mechanism. Such a process is the publication of a U.S. patent application It is discussed in No. 2010/0232129, and the publication of the patent application is cited. The whole shall form a part of this specification. Cavity 64 shown in Figure 8B The tapered shape of is the result of the specific etching process used during its formation. Can be.
00618C and 8E show the ends containing a substantially rounded end portion 70 on the wire bond 32. The part structure is shown. The rounded end 70 is a wire bond between the base 34 and the end 36. It is configured to have a cross section wider than the cross section of the 32 parts. Further rounded edges 7 0 includes the edge surface 71, where the edge surface 71 is the edge surface 37 and the end portion of the wire bond 32. It extends outward from the edge surface 37 of the wire bond 32 at the transition between 70 and 70. Roundness Incorporating the end portion 70 with a tinge is provided in the sealing layer 42 by providing a fixing mechanism. It can act to fix the wire bond 32, and the change in the direction of the surface 71 , The sealing layer 42 is provided with a place to surround the end 70 from three sides. This is a wire bond 32 Separates from the conductive element 28 on the substrate 12 and, as a result, prevents electrical failure. Can be useful for. In addition, the rounded end 70 should be electronically connected. Can increase the surface area not covered by the sealing layer 42 within the surface 44 .. As shown in FIG. 8E, the rounded end 70 extends further above the surface 44. can do. Alternatively, as shown in Figure 8C, the rounded end 70 Can be ground to provide a surface that is substantially flush with surface 44, or separately It can be flattened by the method of, and can have a larger area than the cross section of the wire bond 32. Wear.
0062The rounded end portion 70 is the end of the wire used to make the wire bond 32. Can be formed by applying localized heat in the form of flames or sparks in the part To. You can modify the known wire bonding machine to perform this step, this The step can be performed immediately after cutting the wire. In this process, the heat Melt the wire at its end. This localized liquid metal part is subject to its surface tension. It is therefore rounded and retained as the metal cools.
0063Figure 8D shows the configuration for the microelectronic assembly 10 of the wire bond 32. The end 36 includes a surface 38 located in space above the main surface 44 of the sealing layer 42. like that The configuration is specifically a surface along a portion of the edge surface 37 that is not covered by the sealing layer 42. By providing a stronger connection with the solder mass 68 that wicks above 44 It can provide similar benefits to those discussed for the cavity 64 above. Kazumi In the embodiment, the end face 38 is in the space above the surface 42 by a distance of about 10 μm to about 50 μm. Can be located. Further, the embodiment shown in FIG. 8D, and a part of the edge surface 37. Is not covered by the sealing layer 42 above the surface of the sealing layer 42. In one of them, the end can include a protective layer formed on it. Such a layer May include an oxidative protective layer, including a layer formed from gold, an oxide coating or OSP it can.
0064Figure 9 shows an ultra-compact with stud bumps 72 formed on the end face 38 of the wire bond 32. An embodiment of electronic assembly 10 is shown. Stud bump 72 is another, weird on end face 44 Adhere the renewed wire bond and optionally stretch it along a portion of surface 44 This allows it to be formed after the microelectronic assembly 10 has been made. Changed The broken wire bond is cut near its base without pulling out the length of the wire. Or it is cut in another way. Specific metals without first depositing a bond layer such as UBM The stud bump 72 containing the can be attached directly to the end 38 and therefore by solder Gives a way to form a conductive interconnect to a bond pad that cannot be wetted directly be able to. This is when the wire bond 32 is formed from a metal that cannot be wet May be useful. Generally one of copper, nickel, silver, platinum and gold Alternatively, a plurality of basic stud bumps can be attached in this way. Figure 9 shows Stud bump 72 for electronic or mechanical connection to further microelectronic assemblies The solder mass 68 formed above is shown.
006510A-10D show the ends of the wire bond 32 containing a bent or curved shape. The configuration for 36 is shown. In each embodiment, the end 36 of the wire bond 32 is an edge. At least a portion of the surface 76 is not covered by, for example, the main surface 44. Is bent so as to extend substantially parallel to the surface 44 of the sealing layer 42. Edge surface 3 This portion of 7 can extend above the outside of surface 44, or substantially with surface 44. It can be ground so that it extends in the same plane, or it can be flattened by another method. The embodiment of FIG. 10A is parallel to surface 44 and substantially perpendicular to surface 44. At a portion 74 of the end 36, which terminates at an end face 38, a steep within the wire bond 32. Including bends. FIG. 10B shows the vicinity of portion 74 of the end 36 parallel to the surface 44. It shows the end 36 with a gentler curve than shown in FIG. 10A. Figure 3, Figure 4 or The portion of the wire bond according to the configuration shown in FIG. 5 is substantially parallel to the surface 44. Has a portion of the edge surface that is not covered by the sealing layer 42 in place within the surface 44 Other configurations are possible, including configurations that include the edges to be used. Further, the embodiment of FIG. 10B is At the end of the earbond, it contains a hook-shaped portion 75, which seals the end face 38 within the sealing layer 42. Position below the surface 44 of. It is unlikely to be removed in the sealing layer 42 , Can give a stronger structure for the end 36. 10C and 10D are Similar in structure to the structures shown in FIGS. 10A and 10B, respectively, but formed in the sealing layer 42. Not covered by the sealing layer 42 at some point along the surface 44 by the bitty 64 Shows a good structure. These cavities are the structures discussed above with respect to FIGS. 8A and 8B. Can be structurally similar. Edge containing portion 74 extending parallel to surface 44 The inclusion of portion 36 is due to the presence of an extended uncoated edge surface 75 at its end. The surface area for connecting with can be increased. The length of such part 74 is wire bo It can be longer than the width of the cross section of the wire used to form the node 32.
0066In a further example shown in FIG. 29, multiple wire bonds 1 on a single conductive element 1428. 4 32 can be joined. Sealed with such a group of wire bonds 1432 Creating additional connection points on layer 1442 for electrical connection with the conductive element 1428. Can be done. The exposed portion 1439 of the common joint wire bond 1432 is, for example, generally derived. Make an area of the size of the electrical element 1428 itself, or an external connection with the wire bond 1432 group In another area that approximates the intended size of the bonding mass for production, the sealing layer 1 Can be grouped together on the surface 1444 of 442. Such a wire bo The 1432 can be ball-bonded as shown, as described above. As such, edge bonding can be performed on the conductive element 1428. Conductive element on the substrate When forming multiple wire bonds to a child, for example, by a laser or other cutting instrument Species described herein for cutting metal wires during a wire bonding process Various techniques can be used.
006711 to 15 show the ultra-small size in various steps of the manufacturing method of the ultra-small electronic assembly. The electronic assembly 10 is shown. In FIG. 11, the ultra-small electronic device 22 is on the first surface 14 and is on the first surface. To the steps electrically and mechanically connected to the substrate 12 within the first region 18 of the surface 14 of 1 The ultra-small electronic assembly 10'is shown. The ultra-small electronic device 22 is an example in FIG. For example, the microelectrons that face and join the corresponding contacts on the opposite surfaces 14 of the substrate. Mounted on substrate 12 in flip chip configuration through contacts on element 22 Is shown as. For example, a junction between a contact of an ultra-small electronic device and a contact of a substrate. The part is a conductor of a lump 26, for example, a conductive paste, a conductive matrix material, a solder lump, or the like. Can be made through electrical materials, contacts, among others, pads, posts, For example, it can consist of any suitable configuration such as micropillars, stud bumps and the like. In the present specification, "flip chip bonding" corresponds to ultra-small electronic devices and substrates. Face-to-face electrical coupling between contacting contacts or between a microelectronic device and another microelectronic device It is used to mean the composition of.
0068Alternatively, as seen in the example in Figure 1, instead, the contact of the microelectronic device Upward wire bonding between the board and the substrate can be used. Method shown in Fig. 11 In the embodiment of the device, the dielectric underfill layer 66 includes the ultra-small electronic device 22 and the substrate 12. Can be provided between.
0069FIG. 12 shows the pad 30 of the conductive element 28 exposed on the first surface 14 of the substrate 12. An ultra-small electronic assembly 10'' with a wire bond 32 attached to it is shown. Discussed As such, the wire bond 32 heats the ends of the wire segments and softens the ends. Can be adhered by, thereby pushing the wire bond onto the conductive element 28. When squeezed, it forms a deposited bond with respect to the conductive element 28 to form the base 34. The wire is then drawn from the conductive element 28 and ends 36 and ends of the wire bond 32. If desired before being cut to form surface 38 or otherwise cut , Is manipulated to the specified shape. Alternatively, the wire bond 32, for example, we It can be formed from aluminum wire by edge bonding. Wedge bon The ding heats a portion of the wire adjacent to the end of the wire bond and the portion of that wire By pulling out the minutes along the conductive element 28 while applying pressure to the conductive element 28. Is formed. Such a process is further described in US Pat. No. 7,391,121. The disclosure is hereby incorporated by reference in its entirety.
0070In FIG. 13, the sealing layer 42 is superposed by covering and adhering to the first surface 14 of the substrate. Attached to the small electronic assembly 10''', the sealing layer 42 is above and from the substrate. It extends along the edge surface 37 of the yabond 32. The sealing layer 42 also includes the underfill layer 6 Cover 6 The sealing layer 42 covers the microelectronic assembly 10'' shown in FIG. 12 and is made of resin. Can be formed by depositing. It receives assembly 10' In a well-structured mold with a desired shaped cavity of sealing layer 42 capable This can be done by placing assembly 10'' in. Such molds and The method of forming a sealing layer by the mold is described in U.S. Patent Application Publication No. 2010/0232. It may be as shown and described in No. 129, the disclosure of which shall be cited. The whole shall form a part of this specification. Alternatively, the sealing layer 42 is at least Can also be prefabricated into the desired shape from a partially compliant material. This structure In the end, the compliant properties of the dielectric material are that the sealing layer 42, the wire bond 32 and It enables press-fitting to a position that covers the ultra-small electronic element 22. In these steps , Wire bond 32 penetrates into the compliant material and shapes each hole in that material Along the hole, the sealing layer 42 contacts the edge surface 37. Furthermore, ultra-small electronic devices 22 compliant material so that it can be received within the compliant material It can be transformed. The compliant dielectric material is compressed and on the outer surface 44 The end face 38 can be exposed. Alternatively, any excess compliant dielectric material The material is also removed from the sealing layer and the end face 38 of the wire bond 32 is not coated on the surface 4 A cavite that can form 4 or does not cover the end face 38 at a location within the surface 63 It is possible to form i64.
0071In the embodiment shown in FIG. 13, the sealing layer first has a wire bond 32 on the surface 44 of the sealing layer. It is formed so as to be separated on the end face 38. Above the end face 38 to expose the end face 38 The part of the sealing layer 42 in the above is removed, and as shown in FIG. 14, substantially on the same plane as the end face 42. The new surface 44'in can be exposed. Alternatively, it is shown in FIGS. 8A and 8B. Form a cavity 64, such as a cavity, whose end face 38 is not covered by the sealing layer 42. be able to. In a further alternative form, the sealing layer 42 has a surface 44 already substantially with an end face 48. The surface 44 is placed below the end face 48 so that it is coplanar or as shown in FIG. 8D. It can be formed so as to be. Removal of part of sealing layer 42, if necessary, grinding , Dry etching, laser etching, wet etching, wrapping, etc. Can be done. If desired, a portion of the end 36 of the wire bond 32 is also the same. Substantially flush with surface 44, removed in the same step or a further step A flat end face 38 can be achieved. If desired, the cavity 64, Can also be formed after the step, or as shown in FIG. 10, stud bumps Can also be attached. The resulting microelectronic assembly 10 is then PCB Can be anchored on top or not, as shown in Figure 6 for further assembly It can be incorporated in, for example, a laminated package.
0072In the alternative embodiment shown in FIG. 15, the wire bond 32 is first the wire loop 86. Formed in pairs as part 32'of. In this embodiment, loop 86 is described above. As discussed, it is made in the form of wire bonds. Wire segment pulls up Bent and then bent, at least one configuration required in the direction of the first surface 14 of the substrate 13. It is pulled down to a position where it substantially overlaps the adjacent conductive element 28 in the direction of having the element. To. The wire is then pulled down substantially down to a position near the adjacent conductive element 28. It is then cut or otherwise cut. Then the wire is heated and the sedimentary bon It is connected to the adjacent conductive element 28 by a ding or the like to form a loop 86. afterwards , The sealing layer 42 is formed so as to substantially cover the loop 86. Then in the process A part of the sealing layer 42 is removed by grinding, etching or the like. This process is Also remove a part of loop 86 so that the loop is cut and split into two parts 32', it The location on the surface 44 formed on the sealing layer 42 is not covered by the sealing layer 42. A wire bond 32 having an end face 38 is formed. Then, as discussed above, a Subsequent finishing steps can be applied to assembly 10.
007316A-16C surround the end 36 of the wire bond 32, as discussed above. The steps in an alternative embodiment for making the cavity 64 to be made are shown. Figure 16A Shows the common types of wire bonds 32 discussed above with respect to FIGS. 1-6. Wa The earbond 32 has a mass of sacrificial material 78 that adheres to its end 36. Sacrificial material The mass 78 forms a substantially spherical shape that can result from the surface tension of the material during its formation. It can be made into other desired shapes that can be made or understood by those skilled in the art. Sacrifice In the material mass 78, the end portion 36 of the wire bond 32 is immersed in the solder paste, and the end portion is co-operated. It can be formed by arting. By wicking and surface tension Adjust the viscosity of the solder paste before dipping to control the amount of solder mass that adheres to the end 36 Can be arranged. Therefore, this shadows the size of the mass 78 that adheres to the end 36. Can exert a sound. Alternatively, the mass 78 is on the end 36 of the wire bond 32. It can be formed by depositing soluble material. The other possible mass 78 is the edge Can be individual solder balls or other lumps on the part, or microelectronic structure Others such as copper or gold flushing that are used during the manufacture of the element and can be removed later. It can be done by other means of using the material.
0074In FIG. 16B, the assembly includes the upper part along the edge surface 37 of the wire bond 32. The dielectric layer 42 added to Li 10 is shown. The dielectric layer is the surface of the sacrificial material mass 78. Extends along a portion of the wire so that the dielectric layer is separated from the end 36 of the wire bond 32. Is positioned. After that, the sacrificial material mass 78 is washed or rinsed in a solvent, dissolved, and chemically used. Removed by hatching or other techniques, thereby in the dielectric layer 42, before removal The wire bob, leaving substantially the negative shape cavity 64 of the lump 78 A part of the edge surface 37 near the end 36 of the end 32 is exposed.
0075Alternatively, the sacrificial material mass 78 will extend along the edge surface 37 of the wire bond. Therefore, it can be formed so as to coat substantially all of the wire bond 32. To. This configuration is shown in Figure 17A. Such coatings are as discussed above Can it be attached onto the wire bond 32 after formation on assembly 10? Adheres as a coating to the wire used to make the wire bond 32 be able to. This is basically in coated wire, or, for example, copper. It will take the form of a double wire with a side core and a solder coating. Figure 17B shows Extending along the edge surface 79 of the sacrificial mass 78, thereby waiging substantially along its length On the wire bond 32 and the sacrificial mass 78 so as to separate the dielectric layer 42 from the yabond 32 The adhered dielectric layer 42 is shown.
0076FIG. 17C removes a portion of the sacrificial material mass 78 and creates a cavity 64 around the end 36. The structure which is formed and results from exposing a part of the edge surface 37 is shown. Such implementation In morphology, most, or at least part, of the sacrificial material mass 78 is the dielectric layer 42 and wirebo. It can be left in a place between the and 32. Figure 17C shows another ultra-compact wire bond 32 A solder block 52 that electrically and mechanically connects to the contact pad 40A of the electronic structure 10A. Further shown.
0077Form wire segments and bond the wire segments to conductive elements, especially After forming the ball bond type wire bond discussed above, the wire bond (eg, for example 32) in Figure 1 then from the rest of the wire in the capillary (such as 804 in Figure 32). Be separated. This can be done anywhere, remote from the base 34 of the wire bond 32 Can, preferably at least a sufficient distance to define the desired height of the wire bond 32 Only done in a remote location from Base 34. Such separation is surface 806 and wire bond 3 Placed inside or outside the capillary 804 with and to the base 34 of 2 It can be carried out by a mechanism arranged in the portion. In one method, wire segment 80 0 is the separation by effectively melting off the wire 800 at the desired separation point. Can be done by applying a spark or flame to the wire 800 Wear. Cut wire segment 800 to achieve higher accuracy of wire bond height Different forms can be implemented. As described herein, cutting is the desired field. Partially cut or from the remaining wire segment 800 where the wire can be weakened Describes a complete cut through the wire to separate the wire bond 32 as a whole Can be used for.
0078In the example shown in FIG. 32, the cutting blade 805 is a bond head, such as in a capillary 804. Can be integrated into the assembly. As shown, the cutting blade 805 is there An opening 807 that can extend through is contained within the side wall 820 of the capillary 804. be able to. Cutting blade 805 moves into / out of capillary 804 The cutting blades 805 are alternately capped by the wire 800 because they can be movable. Allows it to pass freely through the rally 804 or can be engaged with wire 800 To. Therefore, with the cutting blade 805 in the outer position inside the capillary, Pull out the Ya 800, form a wire bond 32, and bond it to the conductive element 28. be able to. After bond formation, wire segment 800 is placed in the bond head assembly. It can be fixed using the integrated clamp 803 to fix the position of the wire. Move the cutting blade 803 towards the wire segment to cut the wire completely It can be cut or partially cut, i.e. weaken the wire. Complete off By cutting, the end face 38 of the wire bond 32 can be formed. At this point, Capilla The 804 can move away from the wire bond 32 and form another wire bond, for example. Wear. Similarly, where the wire segment 800 is weakened by the cutting blade 805. If so, bond head with wire still held by wire clamp 803 By moving the unit, it will work in areas weakened by partial disconnection. Separation can be triggered by breaking the ear 800.
0079The movement of the cutting blade 805 is by a servomotor that uses pneumatic or offset cams. Can work. In another example, the movement of the cutting blade 805 is a spring or diamond. It can be operated by flams. Trigger signal for cutting blade 805 activation Can be based on a time delay that counts down from the formation of a ball bond, or Activated by moving the capillary 804 up to a predetermined height on the wire bond base 34 can do. These signals are cut blades 805 before any subsequent bond formation. Other software that operates the bonding machine so that the position of You can link to a. The cutting mechanism breaks to cut the wire from both sides of it A second blade (not shown) located opposite the de 805 can also be included.
0080In another example, the laser 809 is assembled with a bond head unit and wire segmented. Can be positioned to cut the As shown in FIG. 33, the laser head 8 09 is another land on the bond head unit containing the capillary 804 or the capillary 804 It can be positioned outside the capillary 804 by mounting it on a point or the like. Figure 3 Actuating the laser at the desired time as discussed above with respect to the cutting blade 805 of 2 Cut ear 800 to form end face 38 of wire bond 32 at desired height above base 34 can do. In other implementations, the laser 809 is through the capillary 804 itself. Or it can be positioned so that the cutting beam is directed into it, and the bond head unit Can be inside the knit. In some cases a carbon dioxide laser can be used Or, as an alternative, Nd: YAG laser or Cu vapor laser can be used. ..
0081In another embodiment, the stencil unit 824 shown in FIGS. 34A to 34C is used. The earbond 32 can be separated from the remaining wire segment 800. In Figure 34A As shown, the stencil 824 is on top of the wire bond 32 at or near the desired height. It can be a structure having a body defining the surface 826. Stencil 824 is conductive It shall be configured to come into contact with the sex element 28 or any part of the substrate 12 between the conductive elements 28. Can be done. The stencil is desired for wire bond 32, such as covering conductive elements 28, etc. Includes multiple holes 828 that can accommodate the location of. Hole 828 is a bond head unit Capillaries 804 can be sized to accommodate holes 828 With respect to the conductive element 28 for bonding the wire 800 to the conductive element 28 It extends into the hole to the position and forms the base 34 by, for example, ball bonding. be able to. The capillary 804 then pulls the wire segment to the desired length. While being able to move vertically out of hole 828. Removed from hole 828 And the wire segment is fixed in the bond head unit by clamp 803 etc. Capillary 804 can be laterally (parallel to surface 826 of stencil 824, etc. ) Move and define by the intersection of the surface of hole 828 and the outer surface 826 of stencil 824 Move the wire segment 800 so that it contacts the edge 829 of the stencil 824 Can be These movements are still retained within the capillary 804. It can cause the separation of the wire bond 32 from the rest of the gment 800. This The process is repeated to form the desired number of wire bonds 32 in the desired location. Can be done. In some implementations, the capillary can move vertically prior to wire separation. Thus, the remaining wire segments are sufficient to form a subsequent ball bond. Only a distance of 802 protrudes beyond the surface 806 of the capillary 804. Figure 34B shows the hole 828 , Diameter increasing from the first diameter of surface 826 to a larger diameter away from surface 826 Shows a variant of the stencil 824 in which the hole 828 is tapered so that it has. Another In the modified form of, the stencil surface at the desired distance from substrate 12, as shown in FIG. 34C. Formed as having an outer frame 821 that is thick enough to separate the 826 can do. The frame 821 is configured to be positioned adjacent to the substrate 12. Can at least partially enclose the cavity 823, and the thickness of the stencil 824 is Stencil 82, extending between surface 826 and opening area 823, including hole 828 When the portion 4 is positioned on the substrate 12, it is separated from the substrate 12.
008220 and 21 show the ultra-compact wire bond 532 formed on the lead frame structure. A further embodiment of the electronic assembly 510 is shown. An example of a lead frame structure is U.S. Pat. No. Shown and described in Nos. 7,176,506 and 6,765,287, of which Disclosure is incorporated herein by reference. Generally, lead frame Is a structure formed from a sheet of conductive metal such as copper, and this structure has multiple lead wires. Patterned to include segments, can further include paddles and frames To. Use the frame to solidify the leads and paddles, if used, during assembly fabrication Determine. In one embodiment, microelectronic devices such as dies or chips use wire bonds. It can be joined upward to the paddle and electrically connected to the lead wire. Alternatively, ultra-compact The electronic device can be mounted directly on a lead wire that can extend beneath the microelectronic device. it can. In such an embodiment, the contact on the ultra-small electronic device is made of a solder ball or the like. It can be electrically connected to each lead wire. After that, using the lead wire, it is ultra-small Electrical connections to various other conductive structures to transfer signal potentials to / from the type electronic device Can be formed. It can include covering the structure to form a sealing layer. Once the structure has been assembled, the temporary elements of the frame will be leaded to the lead wires and pa It can be removed from the dollar to form individual leads. In this disclosure, the individual references The paddle wire 513 and the paddle 515 are the substrate 512 and are formed integrally with the substrate 512. A segmentation of what forms the substrate 512 as a whole, including the conductive element 528 in the portion. Considered to be a part. Further, in this embodiment, the paddle 515 is the first of the substrate 512. Considered to be within region 518 of 1 and lead wire 513 within region 520 of 2 available. The wire bond 524, which is also shown in the plan view of FIG. 21, is supported on the paddle 515. The ultra-small electronic element 22 is connected to the conductive element 528 of the lead wire 515. Wire bond 53 2 is an additional conductive element on the lead wire 515 at the base 534 of the wire bond 532. It can be further joined to the child 528. Sealing layer 542 is formed on assembly 510 Leave the end 538 of the wire bond 532 uncovered in place within the surface 544. Wa The earbond 532 is within the structure corresponding to the structure described with respect to other embodiments herein. It can have additional or alternative portions that are not covered by the sealing layer 542.
008324 to 26 show the microelectronic package 810 with closed loop wire bond 832. Yet another embodiment of. The wire bond 832 of this embodiment is shown in FIG. Two bases 8 that can be joined to adjacent conductive elements 828a and 828b Includes 34a and 834b. Alternatively, both bases 834a and 834b are shown in Figure 25. And as shown in FIG. 26, they can be joined on a common conductive element 828. That In such an embodiment, the wire bond 832 has an edge surface 837 from the base to the substrate 812. Parts 837a and 8 up to apex 839 on the surface 844 of the upper sealing layer 842, respectively Between the two bases 834a, 834b in the loop so that they extend upwards at 37b Define the extending edge surface 837. The sealing layer 842 has edge surface portions 837a and 837b. Extending along at least some part of, each other and other wires in package 810 Separate each part from the 832. Less edge surface 837 at vertex 839 At least partly not covered by sealing layer 842, thereby separating wire bond 832 Available for electrical interconnection with its components, another component is another microelectric A child component, or another component, such as an individual component such as a capacitor or inductor. be able to. As shown in FIGS. 24 to 26, the wire bond 832 has a vertex 839. Off from conductive element 828 in at least one lateral direction across the surface of substrate 812 Formed to be set. In one example, vertex 839 is the main surface of the microelectronic device 820. Can be overlaid on or otherwise the microelectronic device 820 aligns It can be overlaid on the first region of the substrate 812 to be made. Vertex 839 in another embodiment Including configurations positioned at any of the wire bond end face locations discussed in Other configurations for Earbond 832 are also possible. In addition, vertex 839 is shown in Figure 8A. It can be uncovered in the hole so that it can be. Furthermore, vertex 839 can be extended Yes, over its length as illustrated for the edge planes in FIGS. 10A-10D It can be prevented from being covered on the extending surface 844. Two instead of one Vertex 8 supported by wire bond 832 extending between bases 834a and 834b By providing a connection mechanism in the form of an uncoated edge surface 837 surrounding 39 Achieving a more accurate placement of the connection mechanism in the direction defined by the main surface 844 it can.
008427 and 28 show variants of the embodiments of FIGS. 24 to 26, wire bonding. Bond ribbon 934 is used instead of 834. Bond ribbon shapes wire bond Overall flat, consisting of a conductive material such as one of the materials discussed above to form It can be a piece of material. The bond ribbon structure can have a substantially circular cross section. In contrast to earbonds, it can be wide rather than thick. Shown in Figure 27 Thus, each bond ribbon 934 extends along a portion of the conductive element 928 and is coupled. Includes a first base 934a that can be. Ribbon Bond 932 Second Base 93 4b can be joined to a part of the first base 934a. Edge surface 937 is the apex In two corresponding parts to 939, 937a and 937b, bases 934a and 934 It extends between b. The part of the edge face in the area of vertex 939 is part of its main face 944 Not covered by encapsulant 942 along the minute. Other embodiments disclosed herein Further variants are possible, as described for the wire bond used in the state. is there.
0085The structures discussed above can be used to construct a variety of electronic systems. For example, a system 711 according to a further embodiment of the present invention may include other electronic components 713 and Along with the 715, it includes the microelectronic assembly 710 as described above. In the illustrated example While component 713 is a semiconductor chip, component 715 is a display screen, Any other component can also be used. Of course, for the sake of clarity, Figure 23 shows 2 Only one additional component is shown, but the system has any number of such components. Can include. The microelectronic assembly 710 as described above is related to, for example, FIG. It was discussed with reference to the microelectronic assembly as discussed above, or with reference to Figure 6. The structure can incorporate a plurality of ultra-small electronic assemblies. Assembly 710 Can further include any one of the embodiments described in FIGS. 2 to 22. Wear. In a further variant, multiple variants can be given and any number of such structures Can be used.
0086The microelectronic assembly 710 and its components 713 and 715 are outlined in dashed lines. Mounted in a common housing 719, represented by, and required to form the desired circuit They are electrically interconnected to each other accordingly. In the illustrated system, that system Includes circuit panels 717 such as flexible printed circuit boards, and the circuit panels need to be configured. It contains a number of conductors 721 that interconnect the elements to each other, only one of which is shown in Figure 23. To. However, this is only an example, any structure suitable for making electrical connections. Can be used.
0087The housing 719 is of a type that can be used in, for example, a mobile phone or a personal digital assistant. Shown as a portable housing, the screen 715 is exposed on the surface of the housing. When the ultra-small electronic assembly 710 includes a photosensitive element such as an imaging chip, light is transmitted to its structure. A lens 723 or other optical device can also be provided for feeding. Again, The simplified system shown in Figure 23 is only an example. Desktop computer, Other systems, including systems that are generally considered fixed structures, such as routers, are also discussed above. It can be manufactured using the above-mentioned structure.
0088The above-described embodiments and modifications of the present invention are specifically combined by methods other than those described above. Can be Intended to include all variants within the scope and gist of the present invention. Is done.
0089Although the present invention has been described herein with reference to specific embodiments, these It should be understood that the embodiments merely exemplify the principles and applications of the present invention. Soreyu Eh, it deviates from the gist and scope of the present invention as defined by the appended claims. Numerous changes can be made to the exemplary embodiments without the need for, and other configurations. It should be understood that it can be devised. [Example of Embodiment] [Embodiment 1] It is a method of making an ultra-small electronic package. a) Metal wire segments with a given length from the capillary of the bonding tool Steps to send out and b) A part of the metal wire that is a step in using the bonding tool. It couples to a conductive element that is exposed on the first surface of the substrate, thereby on the conductive element. To form the base of the wire bond, with the steps to use, c) In the step of fixing a part of the wire in the bonding tool, d) Cut the metal wire at a location between the fixed portion and the base. A step that at least partially defines the end face of the wire bond with the base. A cutting step in which the edge surface of the wire bond is defined between the end surface and the end surface. e) A step of repeating step (a) to step (d), which is a plurality of steps of the substrate. Repeated steps of forming a plurality of wire bonds to the conductive element, e) After that, it is a step of forming a dielectric sealing layer that overlaps the surface of the substrate. The sealing layer is formed by at least a part of the surface of the substrate and a part of the wire bond. The wire, which is formed to cover the wire so as not to be covered by the sealing layer. The wire bond by at least one part of the end face or edge face of the bond Steps to form, where the unsealed part of is defined, A method of making an ultra-small electronic package including. [Embodiment 2] The metal wire is only partially cut, and the bonding tool is a wire. The portion of the ear remains fixed and is kept away from the surface of the substrate, thereby the front. The wire is broken at the place of the cut, and the end face is due to the cut and the break. The method according to embodiment 1, which is formed in the above manner. [Embodiment 3] The notch is anterior in a direction substantially perpendicular to the edge surface of the wire bond. The end face of the wire bond is made by completely penetrating the wire segment. The method according to embodiment 1, which is formed only by. [Embodiment 4] At least one microelectronic device overlaps the first surface of the substrate and the substrate Has a first region and a second region, and the microelectronic device is located in the first region. The conductive element is located in the second region and electrifies the at least one microelectronic element. Air-connected, the dielectric encapsulating layer is said to be at least in the second region of the substrate. The method according to embodiment 1, which is formed so as to overlap the first surface of the substrate. [Embodiment 5] In the package, the first wire bond of the wire bonds has the first signal potential. The second wire bond of the wire bonds is the first wire bond. It is configured to simultaneously carry a second signal potential that is different from the signal potential. , The method according to embodiment 4. [Embodiment 6] The metal wire segment uses a laser mounted on the bonding tool. 1. [Embodiment 7] The capillary defines a surface of the capillary through which the wire bond is delivered. The laser is then connected to the surface of the bonding tool and the base of the wire bond. The bon to guide the cutting beam to the location of the wire segment positioned between The method according to embodiment 6, which is mounted on a ding tool. [Embodiment 8] The bonding tool includes a capillary, which is fed by the wire bond. It defines the surface of the capillary through which it is ejected, and the capillary is within the side wall of the capillary. The laser is positioned within the capillary through the opening, including the wall to be formed. The bonding tool so as to guide the cutting beam to the location of the wire segment to be The method according to embodiment 6, which is mounted on a wheel. [Embodiment 9] The laser is one of a CO2, Nd: YAG or Cu vapor laser, embodiment. The method described in 6. [Embodiment 10] The metal wire is cut using a cutting edge that extends within the capillary. The method according to Form 1. [Embodiment 11] The cutting edge faces the wall of the capillary located opposite the wire segment. The method according to embodiment 10, which extends in the direction of [Embodiment 12] The metal wire is of the first cutting edge, with the cutting edge as the first cutting edge. The said in combination with a second cutting edge extending within the capillary so as to be located oppositely. 10. The method of embodiment 10, wherein the cutting edge is used for cutting. [Embodiment 13] The capillary passes through the surface of the capillary through which the wire segment is sent out. Demarcated and said metal wire has a first cut edge and a second cut edge located opposite It is cut using a cutting tool, which is the surface and front of the bonding tool. The wire segment at a location positioned between the wire bond and the base. The method according to embodiment 1, which is mounted on the bonding tool so as to cut. .. [Embodiment 14] The stencil further comprises the step of positioning the stencil on the substrate, the stencil said. Multiple openings that overlap and expose at least a portion of the conductive element The openings depict each edge positioned above the substrate at a first height. The wire segment is defined as the wire relative to the edge of the stencil opening. The method of embodiment 1, wherein the method is cut by lateral movement of the. [Embodiment 15] It is a method of making an ultra-small electronic package. a) A substrate having a first surface and a second surface away from the first surface, and the substrate. An ultra-small electronic device mounted on the first surface and a plurality of exposed on the first surface. A step of positioning a stencil on a processing unit that includes a conductive element. At least some of the conductive elements are electrically connected to the microelectronic element and are pre-loaded. The stencil overlaps at least a portion of the conductive element and exposes at least a portion thereof. It has a plurality of openings to be ejected, and the openings are positioned at a first height above the substrate. The steps to define and position each edge, b) From the capillary of the bonding tool a metal wire segment with a given length Feeding and joining a portion of the wire segment to one of the conductive elements To form the base of the wire bond and to the edge of the stencil opening By moving the wire laterally, the wire segment is sheared and the wire Separate the yabond from the rest of the wire segment and remove the end face on the wire bond. A step of forming the wire bond by a process involving demarcation. , The wire bond defines and forms an edge surface extending between the base and the end face. Steps to do and c) A step of repeating step (b), in which a plurality of elements are placed on the plurality of conductive elements. Repeated steps to form earbonds, A method of making an ultra-small electronic package including. [Embodiment 16] The process further comprises the step of forming a dielectric encapsulating layer on the unit, wherein the encapsulating layer Shaped to at least partially cover the first surface and a portion of the wire bond The end face of the wire bond formed and thereby not covered by the sealing layer or The wire bond is not sealed by at least one portion of the edge surface. The method of embodiment 15, wherein the portion is defined. [Embodiment 17] The rest of the wire segment that extends beyond the plane of the capillary is the subsequent wire. 25. The 15th embodiment, which is long enough to form at least the base of the earbonds. the method of. [Embodiment 18] The stencil defines the thickness in the axial direction of one of the holes and the hole. At least some of them consist of a consistent diameter throughout the thickness of the stencil, practice The method according to form 15. [Embodiment 19] The stencil defines the thickness in the direction of the axis of one of the holes and of the hole. At least some of them have the edge and the substrate from a small diameter near the edge. The method of embodiment 15, wherein the method can be tapered to a large diameter in place between. [Embodiment 20] The stencil is the thickness of the substrate extending along one or more edges of the substrate. An edge member having a first thickness in the direction of the above, wherein the first thickness is the first height. A central portion that includes the edge member and the hole and is surrounded by the edge member. The central portion has an outer surface facing away from the substrate, the outer surface having the first height. The central portion includes a central portion which is further arranged to have a thickness thinner than the first thickness. , The method according to embodiment 15. [Embodiment 21] It is a method of making an ultra-small electronic package. a) Steps to feed the metal wire through the capillary of the bonding tool, b) A part of the metal wire that is a step in using the bonding tool. It couples to a conductive element that is exposed on the first surface of the substrate, thereby forming the conductive element. Steps to use, forming the base of the wire bond, c) In the step of fixing a part of the wire in the bonding tool, d) Place the metal wire in the capillary between the fixed portion and the base A step of cutting at a predetermined distance from the base of the wire bond. The step of cutting, which at least partially defines the end face of the wire bond, A method of making an ultra-small electronic package including. [Embodiment 22] e) A step of repeating steps (a) to (d), wherein a plurality of conductive elements of the substrate are used. Repeated steps to form multiple wire bonds to the child, f) Then, a step of forming an overlapping dielectric sealing layer on the first surface of the substrate. The sealing layer comprises the first surface of the substrate and a part of the wire bond. Formed to cover at least partially, thereby being covered by the sealing layer Not the end face and the edge face extending between the base and the end face of the wire pod The unsealed portion of the wire bond is defined by at least one portion of it. And the steps to form The method according to embodiment 21, further comprising. [Embodiment 23] The metal wire is only partially cut, and the bonding tool is a wire. The portion of the ear remains fixed and is kept away from the first surface of the substrate thereby. The wire is broken at the place of the cut, and the end face is the cut and the break. 21. The method of embodiment 21 formed by. [Embodiment 24] The notch extends into the edge surface of the wire bond extending between the base and the end face. It is made by completely penetrating the metal wire in a substantially perpendicular direction to the wire. 21. The method of embodiment 21, wherein the end face of the yabond is formed by the notch. [Embodiment 25] At least one microelectronic device overlaps the first surface of the substrate and the substrate Has a first region and a second region, and the microelectronic device is located in the first region. The conductive element is located in the second region and electrifies the at least one microelectronic element. Air-connected, the dielectric encapsulating layer is said to be at least in the second region of the substrate. 22. The method of embodiment 22, which is formed so as to overlap the first surface of the substrate. [Embodiment 26] In the package, the first wire bond of the wire bonds has the first signal potential. The second wire bond of the wire bonds is the first wire bond. It is configured to simultaneously carry a second signal potential that is different from the signal potential. , The method according to embodiment 25. [Embodiment 27] The metal wire is cut using a laser mounted on the bonding tool. The method according to the twenty-first embodiment. [Embodiment 28] The metal wire is cut using a cutting edge that extends within the capillary. The method according to form 21. [Embodiment 29] 28. The cut edge extends in a direction towards the wall of the capillary, according to embodiment 28. the method of. [Embodiment 30] The capillary defines the surface of the capillary through which the wire is delivered and is in front of it. The metal wire is a cutting device with a first cutting edge and a second cutting edge located opposite to each other. It is cut with a tool so that the cutting instrument cuts the wire in the capillary. 21. The method of embodiment 21, which is mounted on the bonding tool. [Embodiment 31] It is a method of making an ultra-small electronic package. a) The step of providing the surface of the structure associated with the substrate of the unit being processed, before The substrate has a first surface and a second surface away from the first surface, and has a plurality of conductive elements. The child is exposed on the first surface and the structure is above at least a portion of the conductive element. A step of providing and having a plurality of openings that overlap and expose at least a portion of the opening. b) Sending the metal wire through the capillary of the bonding tool and the wire A part of the wire is joined to one of the conductive elements to form a wire bond base. And, the bonding tool is moved with respect to the base of the wire bond, and the wire is Providing the wire of a predetermined length for earbonding and facing the substrate of the structure. Through the movement of the bonding tool, the wire bond is attached to the rest of the wire. Demarcates the free end of the wire bond away from the base of the wire bond The steps of forming the wire bond by a process that includes A method of making an ultra-small electronic package including. [Embodiment 32] The method of embodiment 31, wherein the structure is a removable stencil. [Embodiment 33] 31. The one according to embodiment 31, wherein the structure is positioned on the first surface of the substrate. Law. [Embodiment 34] The surface of the structure comprises an edge in at least one of the openings and said. The wire is said to the edge until the wire bond is separated from the wire. 31. The method of embodiment 31, wherein the wire is sheared by moving it. [Embodiment 35] An ultra-small electronic device is mounted on the first surface of the substrate, and at least the conductive element is provided. 31. The method of embodiment 31, wherein some are electrically connected to the microelectronic device. [Embodiment 36] c) A step of repeating step (b), in which a plurality of elements are placed on the plurality of conductive elements. 31. The method of embodiment 31, further comprising repeating steps of forming earbonds. [Embodiment 37] The process further comprises the step of forming a dielectric encapsulating layer on the unit, wherein the encapsulating layer Shaped to at least partially cover the first surface and a portion of the wire bond The free end or the wire bond formed and thereby uncovered by the sealing layer. By at least one part of the edge surface extending between the base and the end surface of the The method of embodiment 36, wherein the unsealed portion of the wire bond is defined. [Embodiment 38] The rest of the wire extending beyond the plane of the capillary is a subsequent wire bond. 31. The method of embodiment 31, which comprises at least a length sufficient to form a base. [Embodiment 39] The structure defines the thickness in the axial direction of one of the openings and the opening. At least some of the mouth has a consistent diameter throughout the thickness of the structure, fruit The method according to embodiment 31. [Embodiment 40] The structure defines the thickness in the axial direction of one of the openings and the opening. At least some of the mouths are positioned at a first height above the substrate. From a small diameter near the edge of the surface of the structure, at a location between the edge and the substrate 31. The method of embodiment 31, wherein the method can be tapered to a larger diameter. [Embodiment 41] The structure is in the direction of the thickness of the substrate extending along one or more edges of the substrate. The edge member having the first thickness in the above, wherein the first thickness is the table of the structure. An edge member and a front, defining a first height at which the edges of the surface are positioned above the substrate. A central portion that includes an opening and is surrounded by the edge member, the central portion being the front. It has an outer surface that faces away from the substrate, the outer surface is arranged at the first height, and the central portion is The person according to the thirty-first embodiment, which includes a central portion having a thickness further thinner than the first thickness. Law.
50 sheets
Sheet 1 Sheet 2 Sheet 3 Sheet 4 Sheet 5 Sheet 6 Sheet 7 Sheet 8 Sheet 9 Sheet 10 Sheet 11 Sheet 12 Sheet 13 Sheet 14 Sheet 15 Sheet 16 Sheet 17 Sheet 18 Sheet 19 Sheet 20 Sheet 21 Sheet 22 Sheet 23 Sheet 24 Sheet 25 Sheet 26 Sheet 27 Sheet 28 Sheet 29 Sheet 30 Sheet 31 Sheet 32 Sheet 33 Sheet 34 Sheet 35 Sheet 36 Sheet 37 Sheet 38 Sheet 39 Sheet 40 Sheet 41 Sheet 42 Sheet 43 Sheet 44 Sheet 45 Sheet 46 Sheet 47 Sheet 48 Sheet 49 Sheet 50
Every citation, both ways
| Document | Relation | Office |
|---|---|---|
| US05195237A | Cites | United States of America |
| JP2008166439A | Cites | Japan |
| JP2001118876A | Cites | Japan |
| JP2008171938A | Cites | Japan |
| JP2009176924A | Cites | Japan |
| JP57163919A | Cites | Japan |
23 members in 7 offices
Priority claims4
| Document | Office | Kind | Date |
|---|---|---|---|
| 13405125 | United States of America | – | |
| 201213405125 | United States of America | A | |
| 13752485 | United States of America | – | |
| 201313752485 | United States of America | A |
Members23
| Document | Office | Kind | |
|---|---|---|---|
| US8372741B1 | United States of America | B1 | |
| US2013224914A1 | United States of America | A1 | |
| WO2013126269A1 | World Intellectual Property Organization (WIPO) | A1 | |
| TW201347059A | Taiwan Province of China | A | |
| US8772152B2 | United States of America | B2 | |
| KR20140124011A | Republic of Korea | A | |
| CN104170083A | China | A | |
| EP2817823A1 | European Patent Office (EPO) | A1 | |
| US2015017765A1 | United States of America | A1 | |
| JP2015508240A | Japan | A | |
| KR101571457B1 | Republic of Korea | B1 | |
| KR20150135543A | Republic of Korea | A | |
| US9349706B2 | United States of America | B2 | |
| US2016260647A1 | United States of America | A1 | |
| TWI553754B | Taiwan Province of China | B | |
| JP6025875B2 | Japan | B2 | |
| TW201643975A | Taiwan Province of China | A | |
| JP2017038074A | Japan | A | |
| US9691679B2 | United States of America | B2 | |
| TWI596682B | Taiwan Province of China | B | |
| JP6239718B2This record | Japan | B2 | |
| CN104170083B | China | B | |
| EP2817823B1 | European Patent Office (EPO) | B1 |
15 legal events, as the office reported them to INPADOC
Over the term
Point at a mark for the eventEvents
| Event | Code | |
|---|---|---|
| Written notification of registration of transferJAPANESE INTERMEDIATE CODE: R350R350 | R350 | |
| Written request for registration of change of nameJAPANESE INTERMEDIATE CODE: R313533S533 | S533 | |
| Receipt of annual feesJAPANESE INTERMEDIATE CODE: R250R250 | R250 | |
| Receipt of annual feesJAPANESE INTERMEDIATE CODE: R250R250 | R250 | |
| Receipt of annual feesJAPANESE INTERMEDIATE CODE: R250R250 | R250 | |
| Receipt of annual feesJAPANESE INTERMEDIATE CODE: R250R250 | R250 | |
| Receipt of annual feesJAPANESE INTERMEDIATE CODE: R250R250 | R250 | |
| Receipt of annual feesJAPANESE INTERMEDIATE CODE: R250R250 | R250 | |
| Certificate of patent or registration of utility modelJAPANESE INTERMEDIATE CODE: R150R150 | R150 | |
| First payment of annual fees (during grant procedure)JAPANESE INTERMEDIATE CODE: A61A61 | A61 | |
| Written decision to grant a patent or to grant a registration (utility model)JAPANESE INTERMEDIATE CODE: A01A01 | A01 | |
| Decision of grant or rejection writtenTRDD | TRDD | |
| Request for written amendment filedJAPANESE INTERMEDIATE CODE: A523A521 | A521 | |
| Notification of reasons for refusalJAPANESE INTERMEDIATE CODE: A131A131 | A131 | |
| Report on retrievalJAPANESE INTERMEDIATE CODE: A971007A977 | A977 |
Numbers
- Publication
- 6239718
- Application
- 199236
Titles2
- Japanese
- 超小型電子パッケージを作製する方法
- English
- How to make an ultra-small electronic package
Classification
- CPC, 35
- H10W70/464
- H10W74/117
- H10W70/093
- H10W74/114
- H10W90/701
- H10W90/734
- H10W90/736
- H10W72/252
- H10W90/722
- H10W90/724
- H10W72/07141
- H10W72/07236
- H10W72/075
- H10W90/00
- H10W72/29
- H10W90/752
- H10W90/754
- H10W72/865
- H10W90/756
- H10W72/5449
- H10W74/15
- H10W72/884
- H10W90/28
- H10W90/26
- H10W70/60
- H10W74/10
- H10W74/00
- H10W72/5522
- H10W72/5524
- H10W72/552
- H10W72/5525
- H10W72/019
- H10W72/90
- H10W72/59
- H10W90/24
- IPC, 5
- H01L25 10
- H01L25 11
- H01L25 18
- H01L23 12
- H10P14 40
