Hydrogen passivation of nonlinear optical crystals
18 claims: 2 independent, 16 dependent
- 1非線形光学結晶の結晶欠陥を不活性化するためのシステムであって、 選択された濃度の、水素、重水素、水素含有混合物、重水素含有混合物の少なくとも1つを含む不活性化ガスを含むように構成された曝露チャンバであって、前記チャンバ内部での前記不活性化ガスへの曝露のために少なくとも1つのNLO結晶を含むようにさらに構成された前記曝露チャンバと、 前記曝露チャンバに流体的に接続される不活性化ガスソースと、 前記不活性化ガスソースと前記曝露チャンバとの間で流体的に接続され、前記不活性化ガスソースからの不活性化ガスを前記曝露チャンバに選択的に供給するように構成された流量制御装置と、 前記チャンバ内部に前記NLO結晶を保持するように構成され、加熱エレメントを備えた基板と、 前記基板の前記加熱エレメントと前記流量制御装置に通信で結合されたコンピュータコントローラと、 を備え、前記コンピュータコントローラは、 前記流量制御装置により、前記曝露チャンバへ選択された流量レートの不活性化ガスの流れを供給し、 少なくとも1つのNLO結晶を不活性化ガスに曝露して前記NLO結晶内のダングリングボンドと破壊された結合の少なくともいずれかを修復する間に、前記基板の前記加熱エレメントにより、前記NLO結晶の温度を300°Cと350°Cの間に維持する、ように構成された1つ以上のプロセッサを備える、 システム。
- 2前記流量制御装置が、前記曝露チャンバに供給される不活性化ガスの前記流量を、約10~200cm 3 /分の範囲内に維持するように構成される、請求項1に記載のシステム。
- 3前記基板は、ベータ型ホウ酸バリウム(BBO)、三ホウ酸リチウム(LBO)、四ホウ酸リチウム(LTB)、ホウ酸リチウムセシウム(CLBO)、およびホウ酸セシウム(CBO)の内の少なくとも1つを備えるNLO結晶を保持するように構成される、請求項1に記載のシステム。
- 4水素、重水素、水素含有混合物、重水素含有混合物の少なくとも1つを含む前記不活性化ガスの前記選択された濃度が約5~10%の範囲にある、請求項1に記載のシステム。
- 5前記不活性化ガスが水素含有分子と重水素含有分子の少なくとも1つを含む、請求項1に記載のシステム。
- 6前記水素含有分子と重水素含有分子の少なくとも1つが、低分子量の分子を備える、請求項5に記載のシステム。
- 7前記低分子量の分子がアンモニアまたはメタンの内の少なくとも1つを備える、請求項6に記載のシステム。
- 8非線形光学結晶の結晶欠陥を不活性化するための方法であって、 非線形光学(NLO)結晶を提供するステップと、 前記NLO結晶の温度を300°Cと350°Cの間に維持するステップと、 NLO結晶内のダングリングボンドと破壊された結合の少なくとも1つを修復するために選択された濃度又はこれに近い濃度の、水素、重水素、水素含有混合物、重水素含有混合物の少なくとも1つを含む不活性化ガスに前記NLO結晶を曝露するステップと を含む、方法。
- 9前記NLO結晶が酸化物型非線形結晶である、請求項8に記載の方法。
- 10前記NLO結晶が、ベータ型ホウ酸バリウム(BBO)、三ホウ酸リチウム(LBO)、四ホウ酸リチウム(LTB)、ホウ酸リチウムセシウム(CLBO)、およびホウ酸セシウム(CBO)の内の少なくとも1つを備える、請求項8に記載の方法。
- 11前記NLO結晶の不活性化の程度が、前記NLO結晶のIRスペクトル、可視スペクトル、および/またはUVスペクトルでの1つまたは複数の選択された吸収バンドを活用して監視され、前記選択された吸収バンドの特性が、前記NLO結晶のOH結合の存在度の関数である、請求項8に記載の方法。
- 12前記不活性化ガスの前記選択された濃度が約5~10%の範囲である、請求項8に記載の方法。
- 13前記不活性化ガスが、選択された濃度で水素、重水素、水素含有混合物、重水素含有混合物の少なくとも1つと混合された少なくとも1つの不活性 化 ガスを含む、請求項1に記載のシステム。
- 14前記不活性化ガスが、酸素を含むガスでない、請求項1に記載のシステム。
- 15前記不活性化ガスが、水素、重水素、不活性 化 ガスの選択された濃度の混合ガスであり、混合ガス中の重水素の相対量が、 不活性化の程度を最適化することにより決定される 、請求項1に記載のシステム。
- 16前記不活性化ガスが、選択された濃度で水素、重水素、水素含有混合物、重水素含有混合物の少なくとも1つと混合された少なくとも1つの不活性 化 ガスを含む、請求項8に記載の方法。
- 17前記不活性化ガスが、酸素を含むガスでない、請求項8に記載の方法。
- 18前記 不 活性化ガスが、水素、重水素、不活性 化 ガスの選択された濃度の混合ガスであり、混合ガス中の重水素の相対量が、 不活性化の程度を最適化することにより決定される 、請求項8に記載の方法。
Independent claims18
65 paragraphs, as filed
0001This application relates to the applications listed below (s) (related applications) and claims the benefit of the earliest filing date (s) available and valid from these applications. (For example, US Patent Law (USC35) for patent provisional applications relating to any application, such as a parent application, grandfather application, great-grandfather application, etc. of a related application that claims the earliest available priority date other than the patent provisional application. Claim interests under Article 119).
0002Due to non-statutory requirements of the United States Patent and Trademark Office (USPTO), this application is a US patent entitled NLO CRYSTAL PROPERTIES BY HYDROGEN PASSIVATION, invented by Yung-Ho Chuang and Vladimir Dribinski, filed on October 7, 2011. Provisional application 61 / 544,425 constitutes a normal (non-provisional) patent application.
0003The present invention relates to the field of nonlinear optical materials, and in particular to systems and methods for inactivating nonlinear optical crystals to repair crystal defects.
0004Many modern laser systems require nonlinear optical (NLO) elements. For example, NLO elements are commonly used in frequency mixing (eg, harmonic generation, parametric oscillation / parametric amplification, etc.), Raman amplification, car lens mode-locking, electro-optical modulation, acousto-optic modulation and other applications.
<p num="0005"><patcit num="1"><text>U.S. Pat. No. 6,667,828</text></patcit><patcit num="2"><text>U.S. Patent Application Publication No. 2002/0109110</text></patcit></p>
<p num="0006"> Laser-induced damage (LID) of NLO devices has become a major limitation of many modern laser systems. LID occurs as a result of the interaction between the laser beam and the materials that make up a given NLO element. As a result, NLO devices suffer from LID over time, which can negatively affect physical properties such as transmittance, reflectance, and refractive index. Similarly, this deterioration of physical properties due to the generation of LIDs ultimately leads to failure of the NLO element inside the laser system.</p><p num="0007"> LID is even more problematic in laser systems that utilize shorter wavelength electromagnetic spectra such as deep ultraviolet (DUV) light with wavelengths less than 300 nm. In addition, laser-guided damage rates are also affected by material defects present in NLO devices such as dislocations, impurities, and vacancies. In most cases, material defects in a given NLO device make the NLO device less resistant to LID. Therefore, NLO devices have a shorter lifetime as a result of material defects.</p><p num="0008"> The present invention is directed to alleviating the above problems by improving the damage resistance of NLO devices utilizing the novel systems and methods disclosed herein.</p>
<p num="0009"> Systems and methods for repairing crystal defects in one or more nonlinear optical (NLO) crystals to improve performance or increase resistance to laser-induced damage are disclosed. In one aspect, a system is provided for increasing the resistance of one or more nonlinear optical (NLO) crystals to laser-induced damage by utilizing hydrogen molecules or hydrogen atoms to inactivate crystal defects. Is an exposure chamber configured to contain an inactivating gas having a selected hydrogen concentration or a hydrogen concentration close to the selected hydrogen concentration, at least exposed to the inactivating gas inside the chamber. A chamber further configured to contain one NLO crystal and an inactivating gas source fluidly connected to the exposure chamber, configured to supply the inactivating gas inside the exposure chamber. An inactivated gas source and a substrate configured to hold the NLO crystals inside the chamber, further configured to maintain the temperature of the NLO crystals at or near the selected temperature. The selected temperature may include a substrate which is the melting temperature of the NLO crystal.</p><p num="0010"> In another aspect, a method was provided to increase the resistance of the NLO crystal to laser-induced damage by utilizing hydrogen to inactivate crystal defects, the method of which was (i) the temperature of the NLO crystal was selected. The steps to maintain at or near the selected temperature, where the selected temperature is below the melting temperature of the NLO crystal, and (ii) the NLO crystal at or at the selected hydrogen concentration. It may include a step of exposure to an inactivated gas having a hydrogen concentration close to the hydrogen concentration obtained.</p><p num="0011"> In another aspect, a method is provided for increasing the resistance of a nonlinear optical (NLO) crystal to laser-induced damage by utilizing hydrogen molecules or hydrogen atoms to inactivate crystal defects, the method of which is (i). ) A step of performing an annealing process on the NLO crystal to reduce the water content or OH content of the NLO crystal, and (ii) hydrogen in the NLO crystal at or near the selected hydrogen concentration. It may include a step of exposure to an inactivating gas having a concentration.</p><p num="0012"> In another aspect, a system for optically inspecting one or more samples is provided, the system including the sample stage and a portion of the surface of the one or more samples placed on the sample stage. A laser system configured for illumination, at least one inactivated and annealed NLO crystal that is sufficiently annealed to establish a water content below a selected level. An NLO crystal that is further inactivated enough to establish a selected inactivation level, and at least one light source configured to produce light of a selected wavelength. A laser system that includes a light source further configured to transmit light through the NLO crystal, a crystal housing unit configured to contain the NLO crystal, and at least a portion of the illumination reflected from the surface of the sample. A detector that is configured to do so and a computing system that is communicatively coupled to the detector and that is configured to obtain information about at least a portion of the light received by the detector. It may include a computing system further configured to utilize information about at least a portion of the illumination received by the detector to determine the presence or absence of at least one defect in the sample.</p><p num="0013"> It should be understood that both the above overview and the following detailed description are merely exemplary and descriptive and do not necessarily limit the invention as claimed. The accompanying drawings, which are incorporated herein and constitute a portion of the present specification, provide embodiments of the invention and serve to illustrate the principles of the invention along with an overview.</p><p num="0014"> Many advantages of the present disclosure can be better understood by those skilled in the art by reference to the accompanying drawings.</p>
0015<figref num="1A">It is a block diagram which shows the system for inactivating NLO crystal according to one Embodiment of this invention.</figref><figref num="1B">It is a conceptual diagram of the exposure chamber of the system for inactivating NLO crystals according to one embodiment of the present invention.</figref><figref num="2A">It is a flow chart which shows the method for inactivating NLO crystal according to one Embodiment of this invention.</figref><figref num="2B">It is a flow chart which shows the method for inactivating NLO crystal according to one Embodiment of this invention.</figref><figref num="2C">It is a flow chart which shows the method for inactivating NLO crystal according to one Embodiment of this invention.</figref><figref num="2D">It is a flow chart which shows the method for inactivating NLO crystal according to one Embodiment of this invention.</figref><figref num="3A">It is a flow chart which shows the method for annealing and inactivating NLO crystal according to one Embodiment of this invention.</figref><figref num="3B">FIG. 5 is a flow chart showing a method for annealing and inactivating NLO crystals according to an embodiment of the present invention.</figref><figref num="3C">FIG. 5 is a flow chart showing a method for annealing and inactivating NLO crystals according to an embodiment of the present invention.</figref><figref num="3D">FIG. 5 is a flow chart showing a method for annealing and inactivating NLO crystals according to an embodiment of the present invention.</figref><figref num="4">FIG. 6 is a block diagram showing a laser system with NLO crystals annealed and inactivated according to an embodiment of the present invention.</figref><figref num="5">It is a block diagram which shows the system for inspecting a wafer or a photomask according to one Embodiment of this invention.</figref>
0016References are made here in detail to the disclosed subject matter shown in the accompanying drawings.
0017Generally, with reference to FIGS. 1A-5, systems and methods for inactivating nonlinear optical (NLO) crystals are described according to the present disclosure. Laser systems typically utilize NLO crystals for many applications, especially frequency mixing, Raman amplification, car lens mode-locking, electro-optical modulation, and acousto-optic modulation. Exposure to electromagnetic radiation inside the laser system affects the physical properties of NLO crystals (eg, transmittance, reflectance, refractive index, etc.). The resulting changes in the physical properties of the NLO crystal, commonly referred to as laser-induced damage (LID), tend to prevent the NLO crystal from functioning properly. NLO crystals are less resistant to LID when they have a large number of crystal defects such as dislocations, impurities, vacancies, etc. The present invention is directed to systems and methods for repairing crystal defects in NLOs utilizing hydrogen activation and / or crystal annealing.
0018As used throughout this disclosure, the terms "crystal", "NLO crystal" or "non-linear crystal" generally refer to a non-linear optical crystal suitable for frequency conversion. For example, the nonlinear optical crystals of the present invention may be configured to frequency convert incident illumination at a first wavelength (eg, 532 nm) to output illumination at a shorter wavelength (eg, 266 nm). Further, the nonlinear optical crystals of the present invention include beta-type barium borate (BBO), lithium triborate (LBO), lithium tetraborate (LTB), lithium borate cesium (CLBO), cesium borate (CBO), Oxide-type nonlinear crystals and the like may be included, but the present invention is not limited thereto.
0019As used throughout this disclosure, the term "wafer" generally refers to a substrate formed from a semiconductor or non-semiconductor material. For example, semiconductor or non-semiconductor materials include, but are not limited to, single crystal silicon, gallium arsenide, and indium phosphide. The wafer may contain one or more layers. For example, such layers may include, but are not limited to, resists, dielectrics, conductive materials, and semiconductor materials. Many different types of such layers are known in the art, and the term wafers as used herein are intended to include wafers on which all types of such layers can be formed.
0020FIGS. 1A and 1B show a system 100 for inactivating the NLO crystal 104 to repair crystal defects inside the crystal. These defects can be repaired by attaching hydrogen atoms to the dangling bonds or broken chemical bonds inside the crystal 104. For example, dangling bonds or disruptive chemistries often include oxygen dangling bonds, a major type of defect that affects not only NLO crystal lifetime but also physical / optical properties. In one embodiment, the system 100 may include an exposure chamber 101 configured to contain a large amount of inactivating gas. The exposure chamber 101 may be further configured to include the NLO crystals 104 so that the NLO crystals 104 can be exposed to the inert gas placed inside the exposure chamber 101. The exposure chamber 101 is further configured to include a substrate 102 configured to hold the NLO crystals 104 while the NLO crystals 104 are exposed to an inert gas placed within the exposure chamber 101. May be good. Alternatively, the substrate 102 may be part of the internal surface of the chamber 101.
0021The inactivating gas of the present invention may contain two or more gaseous mixtures having a selected hydrogen concentration. In one embodiment, the gas mixture is molecular hydrogen (H).<sub>2</sub>) May be included. In another embodiment, the inactivating gas may include a low molecular weight gas that may produce hydrogen during a chemical reaction or during decomposition. The low molecular weight gas is NH<sub>3</sub>Or CH<sub>4</sub>May include, but are not limited to. The desired hydrogen concentration may include a concentration that exceeds the natural abundance of hydrogen present under normal atmospheric conditions. In this respect, the hydrogen concentration of the inactivating gas may be composed of a concentration exceeding the hydrogen concentration naturally existing in the air. In another aspect, the desired concentration of hydrogen may be a concentration selected by the user, or a concentration determined utilizing one or more physical attributes of the NLO crystal 104. The inert gas mixture may further contain an inert gas such as argon, nitrogen or helium.
0022In additional embodiments, the inactivating gas of the present invention may comprise a gas mixture having a hydrogen concentration in the range of 5-10%. It should be noted that this hydrogen concentration range is presented herein for illustration purposes only, not as a limitation. It is intended that the hydrogen concentration level of the inactivating gas may include any range suitable for a given application. In additional embodiments, the hydrogen concentration of the inactivated gas mixture may include the heavy isotope of hydrogen, deuterium, to improve the results of inactivation. The exact amount of deuterium in the mixture may be determined by optimizing the inactivation results, ranging from part of the total hydrogen coating to 100% of the total hydrogen in the mixture.
0023In one embodiment, the system may further include an inactivating gas source 108 that is fluidly coupled to the exposure chamber 101 and configured to supply the inactivating gas to the exposure chamber. The exposure chamber 101 was configured to receive the inactivated gas from the inactivated gas source 108, and was further configured to transfer the inactivated gas received from the inactivated gas source 108 into the exposure chamber 101. The gas inflow port 105 may be included. The exposure chamber 101 may further include a gas outflow port 106 configured to release an inert gas from within the exposure chamber 101.
0024In an additional embodiment, the system 100 may include a flow control device 110 fluidly connected between the inert gas source 108 and the exposure chamber 101. The flow control device 110 may be configured to control the rate at which the inert gas is delivered to the exposure chamber 101. The flow control device 110 includes a valve, a regulator, or other means for adjusting the pressure or speed at which the inactivating gas passes through at least one conduit that fluidly connects the flow control device 110 to the exposure chamber 101. It's fine. The flow control device is further configured to be fluidly connected to the gas inflow port 105 of the exposure chamber to control the rate at which the inert gas is delivered into the exposure chamber 101 through the gas inflow port 105. It may be further configured as such. In another embodiment, the flow control device 110 or additional flow control device (not shown) may be configured to be fluidly connected to the gas outflow port 106 of the exposure chamber 101, with the inactivating gas in the exposure chamber. It may be further configured to control the rate of removal from the interior of the 101.
0025In another embodiment, the system 100 may further include one or more computing systems 112 communicatively coupled to the flow control device 110. The computing system 112 may be configured to give instructions to the flow control device 110 to control the rate at which the inactivated gas is delivered to the exposure chamber 101. The computing system 112 may be further configured to instruct the flow control device 110 or an additional flow control device (not shown) to control the rate at which the inactivated gas is removed from the exposure chamber 101. Good. The computing system is a carrier such as a flash memory element, a solid-state storage device, an optical storage device, a random access memory device, or another static storage device or a dynamic storage device composed of program instructions 116 including a flow control algorithm 118. The medium 114 may be included. Flow control algorithms 118, such as algorithms for configuring pressure valves that may be included in the flow control device 110, are known to the art. For example, the flow control algorithm 118 may instruct the flow control device 110 to operate the pressure valve based on the interrelationship between the mechanical properties of the pressure valve and the desired flow rate. In some embodiments, 10-200 cm<sup>3</sup>The user-selected flow rate per minute may be the desired flow rate for inactivating the NLO crystals 104 placed within the exposure chamber 101. However, depending on the composition of the inert gas mixture or NLO crystal 104, 10-200 cm<sup>3</sup>Flow rates other than / min may be desired. The flow range described above is merely exemplary and is by no means intended to limit the present invention.
0026In additional embodiments, the substrate 102 configured to hold the NLO crystals 104 inside the exposure chamber 101 may be further configured to control the temperature of the NLO crystals 104. In one aspect, the user may choose a temperature above ambient temperature or room temperature but below the melting temperature of the NLO crystal 104. For example, substrate 102 heats the NLO crystal to a temperature in the range of 300-350 ° C or some other selected temperature to improve hydrogen permeation into the crystal, molecular hydrogen (eg, H).<sub>2</sub>) Or to reduce the decomposition of other hydrogen-containing molecules into atomic hydrogen, or to eliminate unwanted reaction products between hydrogen and NLO crystals (eg, weak OH bonds, water, etc.) Good. As used herein, the substrate 102 increases, decreases, and / or maintains the temperature of the NLO crystal 104 at any feasible temperature or within the temperature range desired for successful inactivation of the NLO crystal 104. It is intended that it may be configured. Therefore, the temperature ranges described above are merely exemplary and are by no means intended to limit the present invention.
0027According to System 100 above, FIGS. 2A-2D show a flow diagram of Method 200 for inactivating NLO crystal 104 with hydrogen to repair crystal defects caused by dangling bonds or disruptive chemical bonds. With reference to FIG. 2A, method 200 may include one or more of the following steps: (i) Step 202, at the selected temperature, which is the temperature selected by the user or the temperature determined utilizing one or more attributes of the NLO crystal 104 (eg, composition, water content, defect level, etc.). Alternatively, it is determined by maintaining the temperature of the NLO crystal 104 near the selected temperature and (ii) step 204, utilizing the hydrogen concentration selected by the user or one or more attributes of the NLO crystal 104. Exposing 104 NLO crystals to an inert gas with a selected hydrogen concentration, which is a hydrogen concentration.
0028In step 202, the temperature of the NLO crystal 104 is determined by any heating and / or cooling element (hereinafter "heating element") such as substrate 102 configured to hold the NLO crystal 104 in the exposure chamber 101 of system 100. It may be controlled. The heating element improves the user-selected temperature, a temperature determined utilizing one or more attributes of the NLO crystal 104, or hydrogen permeation into the crystal, H.<sub>2</sub>Any temperature that reduces the decomposition of the molecule into H atoms or eliminates unwanted products (eg, weak OH bonds, water, etc.) from one or more reactions between hydrogen and NLO crystal 104. The NLO crystal 104 may be configured to heat or cool to a selected temperature. For example, in one embodiment, the selective temperature may be in the range of about 300 ° C. The heating element may be further configured to maintain the temperature of the NLO crystal 104 for a selected period of time, such as the time required to properly inactivate the NLO crystal 104, at or near the selected temperature. For example, the time required to properly inactivate NLO crystal 104 may be in the range of about 100-200 hours. Thus, in one embodiment, the heating element may be configured to maintain the temperature of the NLO crystal 104 at or near the selection temperature for a selection period in the range of about 100-200 hours. The temperatures and hours mentioned above are included as examples only, and it is intended that these parameters may be significantly modified without departing from the essence of the present disclosure. Therefore, nothing in this specification should be construed as limiting the invention.
0029In step 204, the NLO crystals 104 may be exposed to an atmospherically controlled inactivating gas, such as the exposure chamber 101 of system 100. The inactivating gas may be a gas mixture having a selected hydrogen concentration. The selected hydrogen concentration is a user-selected concentration, a concentration determined utilizing one or more attributes of the NLO crystal 104, or a hydrogen atom from an inactivating gas that is destructively bonded or dangling the NLO crystal 104. It may be of any acceptable concentration to repair crystal defects in the NLO crystal 104 by adhering to the bond. For example, in one embodiment, the selective hydrogen concentration of the inactivating gas may be in the range of about 5-10% of the inactivated gas mixture. However, the above-mentioned hydrogen concentration is included only as an example, and is not intended to limit the present invention.
0030Referring to FIG. 2B, step 204 is a flow rate selected by the user, a flow rate determined utilizing one or more attributes of the NLO crystal 104, a selective hydrogen concentration or near the selective hydrogen concentration in the vessel. Repair crystal defects in NLO crystal 104 by adhering hydrogen atoms from the deactivated gas to the disruptive chemical bonds or dangling bonds of the NLO crystal 104 at an acceptable flow rate to maintain the hydrogen concentration of the activating gas. Step 206 may include maintaining a flow rate at which the inactivating gas may flow through the vessel at or near the selected flow rate, such as sufficient arbitrary flow rate for. The flow rate may be regulated by the flow control device 110 of the system 100 or by any valve, regulator, or other means for controlling the pressure or speed at which the gas passes through one or more conduits. For example, in one embodiment, the flow control device 110 measures the flow rate of the inert gas flowing through the exposure chamber by about 10-200 cm.<sup>3</sup>It may be configured to adjust to the selected flow rate in the range of / minute. However, the above range of flow rates is included as an example only and should never be construed as limiting the invention.
0031With reference to FIGS. 2C and 2D, one embodiment of Method 200 may further include step 208 of monitoring the degree of inactivation of the NLO crystal 104. The degree of inactivation is such that the degree of inactivation is such that the amount of OH bonds generally increases as the NLO crystal 104 is inactivated as a result of attaching hydrogen atoms to the oxygen dangling bonds of the NLO crystal 104. May be correlated with changes in the amount of or the amount of OH bonds. Therefore, the degree of inactivation may be monitored by analyzing one or more absorption bands of NLO crystal 104, which is affected by changes in the number of OH bonds in NLO crystal 104. The absorption band may be analyzed by using any method known to the art for detecting the level at which the NLO crystal 104 absorbs illumination with one or more wavelengths. In one embodiment, the degree of inactivation may be monitored utilizing Fourier Transform Infrared Spectroscopy (FTIR). For example, utilizing Fourier Transform Infrared Spectroscopy (FTIR), the degree of inactivation of NLO crystal 104 is monitored by observing at least one absorption band in the infrared (IR) spectrum of NLO crystal 104. Good. The FTIR process for monitoring the degree of inactivation of NLO crystal 104 may involve one or more of the following steps: (i) transmitting illumination with one or more wavelengths through the NLO crystal 104, (ii) detecting illumination transmitted through the NLO crystal 104, and (iii) passing through the NLO crystal 104. Leverage the information about the transmitted illumination to determine the amount of illumination absorbed by the NLO crystal 104 at one or more wavelengths, and (iv) the NLO crystal 104 at one or more wavelengths. To determine the degree of inactivation of NLO crystal 104 by utilizing the correlation between the illumination absorbed by the NLO crystal 104 and the amount of OH bond or change in the amount of OH bond of NLO crystal 104.
0032In an additional embodiment of Method 200, the NLO crystal 104 may be exposed to the inert gas in step 204 until the NLO crystal 104 is fully inactivated. Step 208, which monitors the degree of inactivation of the NLO crystal 104, may be utilized to determine if the NLO crystal 104 is sufficiently inactivated. For example, the degree of inactivation of NLO crystal 104 is about 3200-4000 cm.<sup>-1</sup>It may be determined by observing one or more absorption bands of the NLO crystal 104 that appear or change the intensity of one or more wavelengths of the IR spectrum in the range of, appearing or changing the intensity at that wavelength. The amplitude or intensity of the absorbing band is interrelated with changes in the amount of OH bonds or the amount of OH bonds in the NLO crystal 104. For example, FTIR has an infrared spectrum of 3580 cm.<sup>-1</sup>Nearby (H<sub>2</sub>May be used to monitor absorption of (including O) -OH bonds. For example, FTIR monitoring may be performed in situ and the crystal is monitored by FTIR while it is undergoing inactivation. Step 208 may further determine if the NLO crystal 104 was sufficiently inactivated by monitoring the relative change in integral peak intensity of one or more selected peaks in the FTIR absorption spectrum. For example, step 208 may determine sufficient inactivation when a 5% reduction in the -OH absorption peak is observed.
0033The above range of absorption band wavelengths and percentage changes for sufficient inactivation is included as an example only, with one or more absorption bands appearing at other wavelengths in the IR spectrum, visible spectrum, and / or UV spectrum. It is intended that it may be done. Therefore, the above range of wavelengths is by no means intended to limit the present invention.
0034The steps are neither sequential nor mandatory and may occur in any order or in parallel with each other. For example, in one embodiment of Method 200, the NLO crystal 104 may be exposed to an inert gas as specified in step 204, while the degree of inactivation of the NLO crystal 104 is specified in step 208. It may be monitored by utilizing the FTIR. In some examples, it may be advantageous to combine some or all of the steps and to arrange the steps in a sequence that is out of order as described herein. The description herein is only descriptive and is not intended to limit the one or more methods disclosed herein to any particular sequence, sequence or combination of steps.
00353A-3D show method 300 for inactivating and annealing NLO crystal 104. With reference to FIG. 3A, method 300 may include one or more of the following steps: (i) Step 302, an annealing process on the NLO crystal 104 to reduce the water content or OH content of the NLO crystal 104, and (ii) step 304, the NLO crystal 104, the user-selected hydrogen concentration or NLO. Exposure to an inactivated gas having a selected hydrogen concentration, which is a hydrogen concentration determined utilizing one or more attributes of Crystal 104.
0036In step 302, the NLO crystal 104 undergoes an annealing process in dry air (eg, clean dry air or a dry inert gas) to remove at least some of the water or OH molecules from the NLO crystal 104. Good. The annealing process is known to the art and may involve one or more of the following steps: (i) Raising or lowering the temperature of the NLO crystal 104 to a selected temperature, such as a value high enough to remove water molecules from the NLO crystal, without dissolving the NLO crystal 104 or damaging the NLO crystal 104. (ii) Maintain the temperature of the NLO crystal 104 at or near the selected temperature for a selected period of time, such as a period sufficient to reduce the water content of the NLO crystal 104 to the selected level. And (iii) raising or lowering the temperature of the NLO crystal 104 to a selected final temperature such as ambient temperature or room temperature when the water content of the NLO crystal 104 is reduced to the selected level. The selected level of water content is the level selected by the user, the water content level determined by utilizing one or more attributes of NLO crystal 104, or the desired optical / physical performance or increased crystal lifetime. It may be any water content level that is interrelated with.
0037In one embodiment, the annealing process of step 302 may further comprise the step of raising or lowering the temperature of the NLO crystal 104 to or from a selected temperature over a selected time interval. For example, NLO crystal 104 may be gradually heated to a selected temperature of about 150 ° C. over a selected period of about 2 hours. The temperature of the NLO crystal 104 may be raised, lowered, or maintained by any known heating or cooling device. For example, the substrate 102 may include a heating or cooling device suitable for heating or cooling the NLO crystal 104. In another example, chamber 101 may be configured as a furnace or cooling device. The heating or cooling device may further include a user-selected period, or a selected period, such as a period determined utilizing one or more attributes of the NLO crystal 104, at a selected temperature or near a selected temperature. It may be configured to maintain the temperature of the NLO crystal 104. For example, the temperature of NLO crystal 104 may be maintained at or near 150 ° C for about 10 hours. Alternatively, the temperature of the NLO crystal 104 may be maintained at or near the selected temperature until the water content or OH content of the NLO crystal 104 is sufficiently reduced. The temperature, duration, and time intervals described above are included as examples only, and it is intended that these parameters may be significantly modified without departing from the essence of the present disclosure. Therefore, nothing in this specification should be construed as limiting the invention.
0038In additional embodiments, the annealing process of step 302 may be repeated to further reduce the water content of the NLO crystal 104. The annealing process may be repeated, if necessary, utilizing the same or different parameters such as one or more different temperatures or different time periods or different intervals. For example, NLO crystal 104 may be heated to about 200 ° C. for about 1 hour. Similarly, the temperature of the NLO crystal 104 may be maintained at or near 200 ° C for about 100 hours or until the water content or OH content of the NLO crystal 104 is sufficiently reduced. The temperature, duration and time intervals mentioned above are included as examples only, and it is intended that these parameters may be significantly modified without departing from the essence of the present disclosure. Therefore, nothing in this specification should be construed as limiting the invention.
0039The annealing process of step 302 may further comprise the step of gradually increasing or decreasing the temperature of the NLO crystal 104 to the selected final temperature (eg, ambient temperature or room temperature) over the selected time interval. For example, the NLO crystal 104 may be gradually cooled to ambient temperature or room temperature over about 3 hours or over any other acceptable time interval, or may be coolable. In one embodiment, the NLO crystal 104 may be cooled by gradually removing heat such that the temperature of the NLO crystal 104 gradually decreases to ambient temperature over a selected time interval. In another embodiment, the NLO crystal 104 may be cooled utilizing a cooling device to reduce the temperature of the NLO crystal 104 to a selected final temperature. The selected time interval may be any time interval selected by the user, or a time interval determined utilizing one or more attributes of the NLO crystal 104. Therefore, any time interval included herein is included as an example only and is by no means intended to limit the present invention.
0040With reference to FIGS. 3B and 3D, the annealing process of step 302 further comprises step 310 of monitoring the water content or OH content of the NLO crystal by analyzing one or more absorption bands of the NLO crystal 104. Often, the absorption band is affected by changes in the number of OH bonds in the NLO crystal 104. The absorption band may be analyzed by using any method known to the art for detecting the level at which the NLO crystal 104 absorbs illumination with one or more wavelengths. For example, utilizing FTIR, the water content or OH content of NLO crystal 104 may be monitored by observing at least one absorption band in the infrared (IR) spectrum of NLO crystal 104. The FTIR process for monitoring the water content or OH content of NLO crystal 104 may include one or more of the following steps. (i) transmitting illumination with one or more wavelengths through the NLO crystal 104, (ii) detecting illumination transmitted through the NLO crystal 104, and (iii) passing through the NLO crystal 104. Leverage the information about the transmitted illumination to determine the amount of illumination absorbed by the NLO crystal 104 at one or more wavelengths, and (iv) the NLO crystal 104 at one or more wavelengths. Utilizing the interrelationship between the illumination absorbed by the NLO crystal 104 and the amount of OH bond or the amount of OH bond in the NLO crystal 104, the water content or OH content of the NLO crystal 104 or the water content of the NLO crystal 104 or To determine changes in OH content.
0041In an additional embodiment, the annealing process of step 302 is one of the annealing processes until it is determined that the water content or OH content of the NLO crystals has been sufficiently reduced by utilizing the monitoring process of step 310. Alternatively, it may further include step 312, which performs a plurality of steps. For example, the water content or OH content of NLO crystal 104 is about 3200-4000 cm.<sup>-1</sup>It may be determined by observing one or more absorption bands of the NLO crystal appearing at one or more wavelengths in the IR spectrum in the range of, and the amplitude or intensity of the absorption band appearing at that wavelength is the NLO crystal. Correlated with changes in the amount of OH bonds or the amount of OH bonds in 104. The above range of absorption band wavelengths is included as an example only, and it is intended that one or more absorption bands may appear at other wavelengths in the IR spectrum. Therefore, the wavelength range described above is by no means intended to limit the present invention.
0042The above steps of the annealing process in step 302 are neither sequential nor mandatory. The steps may occur in any order or in parallel with each other. For example, it is intended that the NLO crystal 104 may be maintained at the selected temperature. At the same time, the water content or OH content of the NLO crystal 104 may be monitored utilizing FTIR as defined by step 310. It is further intended that the temperature of the NLO crystal 104 may be maintained at the selected temperature until the water content or OH content of the NLO crystal 104 is sufficiently reduced as defined by step 312. In some examples, it may be advantageous to combine some or all of the steps and to arrange the steps in a sequence that is out of order as described herein. The description herein is only descriptive and is not intended to limit the one or more methods disclosed herein to any particular sequence, sequence or combination of steps.
0043It is possible that after the NLO crystal 104 was annealed to reduce the water content or OH bonds of the NLO crystal, the NLO crystal 104 was inactivated with hydrogen, some of which resulted from the annealing process in step 302. It may be advantageous to repair crystal defects caused by one or more dangling bonds or disruptive chemical bonds. Therefore, in step 304 of method 300, the NLO crystal 104 may be exposed to the inactivating gas inside the container, such as the exposure chamber 101 of system 100. The inactivating gas may be a gas mixture having a selected hydrogen concentration. The hydrogen concentration is a user-selected concentration, a concentration determined by utilizing one or more attributes of the NLO crystal 104, or a hydrogen atom from an inactivating gas attached to a destructive chemical bond or dangling bond of the NLO crystal 104. It may be of any acceptable concentration for repairing crystal defects in the NLO crystal 104. For example, in one embodiment, the selective hydrogen concentration of the inactivating gas may be in the range of about 5-10% of the inactivated gas mixture. However, the hydrogen concentration mentioned above is included as an example only, and it is by no means intended to limit the present invention. In some embodiments, step 304 may further comprise one or more steps or elements from Method 200 for inactivating the NLO crystal 104 described above.
0044With reference to FIGS. 3C and 3D, the inactivation process of step 304 may further include step 320 of monitoring the degree of inactivation of the NLO crystal 104. The degree of inactivation may be monitored by analyzing one or more absorption bands of NLO crystal 104, which is affected by changes in the number of OH bonds in NLO crystal 104. The absorption band may be analyzed by using any method known to the art for detecting the level at which the NLO crystal 104 absorbs illumination with one or more wavelengths. For example, utilizing FTIR, the degree of inactivation of NLO crystal 104 may be monitored by observing at least one absorption band in the infrared (IR) spectrum of NLO crystal 104. The FTIR process for monitoring the degree of inactivation of NLO crystal 104 may include one or more of the following steps: (i) transmitting illumination with one or more wavelengths through the NLO crystal 104, (ii) detecting illumination transmitted through the NLO crystal 104, and (iii) passing through the NLO crystal 104. Leverage the information about the transmitted illumination to determine the amount of illumination absorbed by the NLO crystal 104 at one or more wavelengths, and (iv) the NLO crystal 104 at one or more wavelengths. Utilizing the interrelationship between the illumination absorbed by the NLO crystal 104 and the amount of OH bond or change in the amount of OH bond in the NLO crystal 104 to determine the degree of inactivation of the NLO crystal 104.
0045In an additional embodiment, step 304 may further include step 322 exposing the NLO crystal 104 to the inactivating gas until the NLO crystal 104 is fully inactivated. Step 320, which monitors the degree of inactivation of the NLO crystal 104, may be utilized to determine if the NLO crystal 104 is sufficiently inactivated. For example, the degree of inactivation of NLO crystal 104 is about 3200-4000 cm.<sup>-1</sup>It may be determined by observing one or more absorption bands of the NLO crystal 104 that appear or change the intensity of the IR spectrum in the range of one or more wavelengths, and the appearance or intensity of that wavelength. The changing absorption band amplitude or intensity correlates with changes in the amount of OH bonds or the amount of OH bonds in the NLO crystal 104. The absorption band wavelength range described above is included as an example only, and it is intended that one or more absorption bands may appear at other wavelengths in the IR spectrum. Therefore, the wavelength range described above is by no means intended to limit the present invention.
0046The steps described above are neither sequential nor mandatory, and the steps may occur in any order or in parallel with each other. For example, in one embodiment of step 304, the NLO crystal 104 is intended to be exposed to an inert gas having a selected hydrogen concentration, while at the same time the degree of inactivation of the NLO crystal 104 is the step. It may be monitored using FTIR as specified in 320. It is further intended that the NLO crystal may be exposed to the inactivating gas until the NLO crystal 104 is sufficiently inactivated as defined in step 322, and the monitoring technique of step 320 is that the NLO crystal 104 is It may be used to determine if it is sufficiently inactivated. In some examples, it may be advantageous to combine some or all of the steps and to arrange the steps in a sequence that is out of order as described herein. The description herein is only descriptive and is not intended to limit the one or more methods disclosed herein to any particular sequence, sequence or combination of steps.
0047For better physical / optical performance or longer crystal lifetime than can be achieved utilizing the unmodified NLO crystal 104, the fully annealed and inactivated NLO crystal 104 of the laser system It may be advantageous to incorporate it inside. The laser system configurations of the present disclosure may include configurations such as mode-locked, CW, or Q-switched, and any other laser or laser system, including one or more non-linear crystals. It is not limited to. The description herein is further intended to include a wide range of possible laser spectra including, but not limited to, electromagnetic spectra such as deep ultraviolet (DUV), ultraviolet (UV), infrared, visible and the like. And. As used herein, the terms "laser system" and "laser" may be used interchangeably to describe the configuration of one or more lasers.
0048FIG. 4 shows a laser system 400 with an inactivated and / or annealed NLO crystal 104. The laser system 400 of the present invention comprises a light source 402, a first set of beam-formed lenses 404, an inactivated / annealed crystal 104 described herein above, a housing unit 406, a harmonic separation element 408. It may include, but is not limited to, a set and a second set 410 of beam-formed lenses.
0049In one aspect, the output of the light source 402 is an ellipse of the NLO crystal 104 that has been inactivated / annealed using the beam forming lens 404, or that is close to the NLO crystal 104 that has been inactivated / annealed. May be focused on the Gaussian beam waist of the cross section of. As used herein, the term "proximity" is preferably less than half of the Rayleigh range from the center of crystal 104. In one embodiment, the aspect ratio between the Gaussian widths of the ellipse spindle may be located between about 2: 1 and about 6: 1. In other embodiments, the ratio between the main axes of the ellipse may be between about 2: 1 and about 10: 1. In one embodiment, a wider Gaussian width is substantially aligned with the leaving direction of the NLO crystal (eg, within about 10 ° of alignment).
0050In another aspect, the housing unit 406 may protect the NLO crystal 104 from ambient air conditions and other impurities, thereby facilitating the maintenance of its inactivated / annealed state. It should be noted that crystals exposed to atmospheric water or other impurities may begin to deteriorate over time and return to an unactivated or unannealed state. The crystalline housing unit is incorporated herein by reference in its entirety, "Enclosure For Controlling The Environment of Optical," filed May 6, 2008. It is generally described in US Patent Application No. 12 / 154,337, entitled "Crystals". In some embodiments, the housing unit 406 may include a large structure suitable for accommodating the crystal 104 and other components of the laser system 400. In other embodiments, the housing 406 may be large enough to accommodate all the components of the laser system 400. It should be noted that the larger the housing, the more precautionary measures are required for the maintenance and repair of the laser system (to protect the crystal 104 from deterioration and to maintain its inactivated / annealed state). .. Therefore, in an additional aspect, the housing unit 406 may consist primarily of a small housing structure suitable for encapsulating only NLO crystals 406.
0051The beam-formed lens 404 may include an anamorphic lens that may change the cross section of the output from the light source 402. The anamorphic lens may include, for example, at least one of a prism, a cylindrical bending element, a radial symmetric bending element, and a diffraction element. In one embodiment, the light source 402 may include a laser that produces frequencies in the visible range (eg, 532 nm) that is doubled inside the crystal 104. In other embodiments, the light source 402 may include a laser light source that produces two or more frequencies coupled within the crystal 402 to produce a sum or difference frequency. Frequency conversion and associated lenses and hardware are described herein in US Patent Application No. 13 / 241,564, Dribinski et al., Filed March 6, 2012, which is incorporated herein by reference in its entirety. There is.
0052FIG. 5 is for measuring or analyzing defects in one or more samples 510, such as a photomask (ie, reticle), wafer, or any other sample that may be analyzed utilizing an optical inspection system. The inspection system 500 configured in is shown. The inspection system 500 may include the laser system 400 described above. The laser system 400 may include one or more of the inactivated / annealed NLO crystals 104 described throughout this disclosure. In one embodiment, the NLO crystal 104 of the laser system 400 may be sufficiently annealed to reduce the water content of the NLO crystal 104 to the selected water content level.
0053In additional embodiments, the NLO crystal 104 of the laser system 400 may be sufficiently inactivated to repair crystal defects caused by dangling bonds such as oxygen dangling bonds or disruptive chemical bonds. The dangling bond or dangling bond of the NLO crystal 104 may be repaired by inactivation by attaching a hydrogen atom to the dangling bond or dangling bond of the NLO crystal 104. In some cases, some of the dangling bonds or fracture chemical bonds may be the product of an annealing process performed on the NLO crystal 104. The NLO crystal 104 is acceptable to achieve the desired physical / optical performance, improved LID resistance, improved power beam quality, improved power stability, increased crystal life, or higher operating power. It may be inactivated to a selected degree of inactivation, which is possible.
0054The NLO crystal 104 of the laser system 400 may have at least one absorption band in the IR spectrum of the NLO crystal 104 that correlates with the presence, absence, or amount of OH bonds in the NLO crystal 104. The absorption band of NLO crystal 104 may be measured utilizing FTIR to determine the degree of inactivation or water content level of NLO crystal 104. The specified amplitude or intensity of the absorption band of the NLO crystal 104 may correspond to a sufficient annealing level or a sufficient inactivation level of the NLO crystal 104. The specified amplitude or intensity of the absorption band may be a value selected by the user or a value determined utilizing one or more attributes of the NLO crystal 104. Therefore, the absorption band of the NLO crystal 104 of the laser system 400 may have an amplitude or intensity of or near the specified amplitude or intensity of the specified amplitude or intensity. The laser system 400 may further include at least one source of electromagnetic waves, such as a diode excited solid state (DPS) source or a fiber IR source, configured to provide illumination to the NLO crystal 104. At least a portion of the illumination provided by the electromagnetic source may be transmitted directly or indirectly through the NLO crystal 104 in the frequency conversion process of the crystal 104.
0055The inspection system 500 may further include a sample stage 512 configured to hold the sample 510 during the inspection process. The sample stage 512 may be configured to hold the sample 510 in a location where the sample 510 may receive at least a portion of the illumination transmitted from the laser system 400. The sample stage 512 may also be configured to operate the sample 510 at a user-selected location. The sample stage 512 may further be communicatively coupled to one or more computing systems and configured to operate the sample 510 at a location selected by the user or as determined by the computing system. Sample 510 may receive at least a portion of the illumination transmitted from the laser system 400.
0056The inspection system 500 may further include a detector 504 configured to directly or indirectly receive at least a portion of the illumination reflected from the surface of the sample 510. The detector 504 may include any suitable detector known for the technology, such as a charge-coupled device (CCD) or a time-delayed integral (TDI) CCD-based detector. The inspection system 500 may further include one or more computing systems 514 that are communicatively coupled to the detector 504. The computing system 514 may be configured to receive information from the detector 504 about the characteristics of the illumination reflected from the surface of the sample 510. The computing system 514 may be further configured to execute the inspection algorithm from program instruction 518 on the carrier medium 516. The inspection algorithm may be any inspection algorithm known to the technique for measuring one or more defects in sample 510, utilizing information about the characteristics of the illumination reflected from the surface of sample 510. Therefore, the computing system 514 may utilize information about the illumination reflected from the surface of the sample 510 to measure the presence, absence, quantity, and / or type of defects in the sample 510.
0057The inspection system 500 includes one or more illumination optics 503 (eg, retarder, 1/4 wave plate, focal lens, phase modulator, polarizer, mirror, beam splitter, reflector, convergent lens / divergence lens, prism). Etc.) may be included. The illumination optical element 503 may be configured to directly or indirectly receive the illumination emitted by the laser system 400. Illumination optics 403 further transmits and / or guides at least a portion of the illumination received directly or indirectly along the illumination path of inspection system 500 from the laser system 400 to the surface of sample 510. It may be configured. The illumination path may be any path along which illumination can travel from the laser system 400 to the surface of the sample 510, such as a direct line of sight between the laser system 400 and the surface of the sample 510. In some embodiments, the illumination path includes, but is not limited to, an illumination optic or any other optic disclosed herein, a path depicted by the configuration of one or more optics. It may be.
0058In one embodiment, the illumination path of the inspection system 400 transfers at least a portion of the illumination received directly or indirectly from the laser system 400 to the surface of the sample 510 or to additional components of the illumination path. A beam splitter 508 configured to do so may be included. The beam splitter 508 may be any optical device capable of splitting one beam of illumination into two or more beams of illumination. The illumination path is further configured to transfer at least a portion of the illumination received directly or indirectly from the laser system 400 to the surface of the sample 510 (eg, retarder, 1/4 wavelength). Plates, focal lenses, phase modulators, polarizers, mirrors, beam splitters, reflectors, convergent / divergent lenses, prisms, etc.) may be included.
0059In one embodiment, the inspection system 500 is configured to directly or indirectly receive at least a portion of the illumination reflected from the surface of the sample 510 (eg, retarder, 1 /). It may include a four-wave plate, a focal lens, a phase modulator, a polarizer, a mirror, a beam splitter, a reflector, a focusing lens / divergent lens, a prism, etc.). The condensing optical element 506 is further configured to transmit at least a portion of the illumination received directly or indirectly from the surface of the sample 510 to the detector 504 along the condensing path of the inspection system 500. Good. The condensing path may be any path along which illumination can travel from the surface of the sample 510 to the detector 504, such as a direct line of sight between the surface of the sample 410 and the detector 504. In some embodiments, the condensing path comprises, but is not limited to, condensing optics or any other optics disclosed herein. It may be the path drawn by.
0060Although the present disclosure describes the inspection system 400 in connection with the generic inspection of one or more samples, aspects of the invention of the inspection system 400 are utilized in the fabrication or analysis of semiconductors or semiconductor components. It is intended that it may be extended to a wide range of inspection or measurement systems. The inspection system 400 may be configured for one or more modes of operation known to the art. For example, the inspection system 400 may be configured for brightfield inspection, darkfield inspection, or any other form or configuration known for current or future technology. The inspection system 400 may be further configured for one or more inspection functions known to the technology. For example, the inspection system 400 may be configured to inspect one or more photomasks, patterned wafers, unpatterned wafers, or for any other inspection function known to current or future technology.
0061It should be recognized that the various steps described throughout this disclosure may be performed by a single computing system, or instead by multiple computing systems. In addition, different subsystems of the system may include computing systems suitable for performing at least some of the steps described above. Therefore, the above description should not be construed as a limitation on the present invention, but merely as an example. In addition, one or more computing systems may be configured to perform any other step (s) of any of the method embodiments described herein.
0062Computing systems may include, but are not limited to, personal computing systems, mainframe computing systems, workstations, imaging computers, parallel processors, or any other device known in the art. In general, the term "computing system" may be broadly defined to include any device having one or more processors that execute instructions from a memory medium.
0063Program instructions that implement methods such as those described herein may be transmitted on the carrier medium or stored in the carrier medium. The carrier medium may be a transmission medium such as a wired transmission link, a cable transmission link, or a wireless transmission link. Further, the carrier medium may include a storage medium such as a read-only memory, a random access memory, a magnetic disk or an optical disk, or a magnetic tape.
0064All of the methods described herein may include storing the results of one or more steps of a method embodiment in a storage medium. Results may include any of the results described herein and may be stored in any technique known in the art. The storage medium may include any storage medium described herein, or any other suitable storage medium known in the art. After the results have been stored, the results can be accessed and used within the storage medium by either the method embodiment or the system embodiment described herein and formatted for display to the user. Can be used by another software module, method, system, etc. In addition, the results may be stored "permanently", "semi-permanently", temporarily or for some period of time. For example, the storage medium may be random access memory (RAM) and the results do not necessarily have to last indefinitely within the storage medium.
0065It is further further that each of the embodiments of the methods described above may include any other step (s) of any other method (s) described herein. Intended. In addition, each of the embodiments of the methods described above may be performed by any of the systems described herein.
0066Those skilled in the art will have a variety of means (eg, hardware, software, and / or firmware) capable of achieving the processes and / or systems and / or other techniques described herein, and preferred means. You will understand that processes and / or systems and / or other technologies will vary depending on the circumstances in which they are deployed. For example, if the implementer determines that speed and accuracy are paramount, the implementer may choose primarily hardware and / or firmware means. Instead, if flexibility is paramount, implementers may choose primarily software implementations. And again, instead, the implementer may opt for any combination of hardware, software, and / or firmware. Therefore, there are several conceivable means by which the processes and / or devices and / or other techniques described herein can be achieved, any of which is any means utilized, the means deployed. It is inherently superior to the others in that it is an option depending on the situation in which it is used and the specific interests of the implementer (eg, speed, flexibility, or predictability), all of which can change. Absent. Those skilled in the art will recognize that the optical aspects of the implementation utilize hardware, software and / or firmware that are usually optically oriented.
0067Those skilled in the art will be able to describe the equipment and / or process in the manner described herein and then use engineering standards to integrate such described equipment and / or process into a data processing system. You will recognize that it is common in. That is, at least some of the devices and / or processes described herein can be integrated into a data processing system through a reasonable amount of experimental work. For those skilled in the art, typical data processing systems include system unit housings, video display devices, memories such as volatile and non-volatile memories, processors such as microprocessors and digital signal processing devices, operating systems, drivers, graphic user interfaces. , And computing entities such as application programs, one or more interactive devices such as touchpads or screens, and / or feedback loops and control motors (eg, feedback, components and / or for detecting position and / or speed). Or you will recognize that it generally includes one or more of the control systems including control motors for moving and / or adjusting the amount. Typical data processing systems are implemented utilizing any suitable commercially available components such as components commonly found in data computing systems / communication systems and / or network computing systems / communication systems. Good.
0068The subject matter described herein may refer to a different component that is contained within or is connected to another different component. It should be understood that such indicated architectures are only exemplary, and that in practice many other architectures that achieve the same functionality can be implemented. In a conceptual sense, any arrangement of components to achieve the same functionality is effectively "associated" to achieve the desired functionality. Therefore, any two components combined herein to achieve a particular functionality are "associated" with each other so that the desired functionality is achieved regardless of the architecture or intermediate components. It can be seen as "is." Similarly, any two components thus associated can also be considered to be "connected" or "combined" with each other to achieve the desired functionality. Any two components that can be associated with each other can also be considered "combinable" with each other to achieve the desired functionality. Specific examples that can be combined are physically connectable and / or physically interacting components, and / or wirelessly interactive components and / or wirelessly interacting components. And / or includes, but is not limited to, logically interacting components and / or logically interactable components.
0069Although specific aspects of the subject matter described herein have been shown and described, those skilled in the art will appreciate the subject matter described herein and its broader aspects, based on the teachings of the specification. Changes and amendments may be made without deviation, and thus the appended claims are within that scope and all such modifications and amendments are within the true spirit and scope of the subject matter described herein. It will become clear that it should be included as being in.
0070Furthermore, it should be understood that the present invention is defined by the appended claims.
0071Although specific embodiments of the invention have been described, it is clear that various modifications and embodiments of the invention may be made by one of ordinary skill in the art without departing from the scope and spirit of the disclosure described above. Therefore, the scope of the present invention should be limited only by the claims attached herein.
0072Many of the advantages of this disclosure and its consequent are believed to be understood by the above description and are components without departing from the disclosed subject matter or at the expense of all of its significant advantages. It becomes clear that various changes can be made in the form, structure, and arrangement of. The embodiments described are merely exemplary and it is the intent of the claims below to include and include such modifications.
12 sheets
Sheet 1 Sheet 2 Sheet 3 Sheet 4 Sheet 5 Sheet 6 Sheet 7 Sheet 8 Sheet 9 Sheet 10 Sheet 11 Sheet 12
Every citation, both ways
| Document | Relation | Office | Cited during |
|---|---|---|---|
| JP2018132773A | Cited by | Japan | Search report |
| US20030011872A1 | Cites | United States of America | – |
54 members in 8 offices
Priority claims5
| Document | Office | Kind | Date |
|---|---|---|---|
| 61544425 | United States of America | – | |
| 201161544425 | United States of America | P | |
| 13488635 | United States of America | – | |
| 201213488635 | United States of America | A | |
| 2012059072 | United States of America | W |
Members54
| Document | Office | Kind | |
|---|---|---|---|
| US2013088706A1 | United States of America | A1 | |
| WO2013052878A1 | World Intellectual Property Organization (WIPO) | A1 | |
| TW201319710A | Taiwan Province of China | A | |
| IL231971A0 | Israel | A0 | |
| IL231971D0 | Israel | D0 | |
| KR20140073562A | Republic of Korea | A | |
| CN103975272A | China | A | |
| EP2764403A1 | European Patent Office (EPO) | A1 | |
| JP2014534464A | Japan | A | |
| EP2764403A4 | European Patent Office (EPO) | A4 | |
| US9250178B2 | United States of America | B2 | |
| JP2016040549A | Japan | A | |
| US2016169815A1 | United States of America | A1 | |
| JP6000362B2This record | Japan | B2 | |
| US9459215B2 | United States of America | B2 | |
| TWI554818B | Taiwan Province of China | B | |
| TW201638646A | Taiwan Province of China | A | |
| JP6062521B2 | Japan | B2 | |
| US2017025281A1 | United States of America | A1 | |
| IL249433A0 | Israel | A0 | |
| IL249433D0 | Israel | D0 | |
| JP2017083860A | Japan | A | |
| CN103975272B | China | B | |
| CN107255897A | China | A | |
| CN107255898A | China | A | |
| IL231971A | Israel | A | |
| TWI611247B | Taiwan Province of China | B | |
| IL256141D0 | Israel | D0 | |
| TW201807476A | Taiwan Province of China | A | |
| IL249433A | Israel | A | |
| IL249433B | Israel | B | |
| JP2018132773A | Japan | A | |
| JP6415523B2 | Japan | B2 | |
| KR20190032640A | Republic of Korea | A | |
| TWI658313B | Taiwan Province of China | B | |
| US10283366B2 | United States of America | B2 | |
| US2019198330A1 | United States of America | A1 | |
| TW201925892A | Taiwan Province of China | A | |
| KR101961901B1 | Republic of Korea | B1 | |
| KR20200000492A | Republic of Korea | A | |
| KR102062508B1 | Republic of Korea | B1 | |
| IL256141A | Israel | A | |
| IL256141B | Israel | B | |
| JP2020129134A | Japan | A | |
| CN107255897B | China | B | |
| KR102269160B1 | Republic of Korea | B1 | |
| TWI735852B | Taiwan Province of China | B | |
| EP2764403B1 | European Patent Office (EPO) | B1 | |
| US11227770B2 | United States of America | B2 | |
| EP3957778A1 | European Patent Office (EPO) | A1 | |
| JP7170686B2 | Japan | B2 | |
| JP2023002813A | Japan | A | |
| JP2024153787A | Japan | A | |
| JP7788504B2 | Japan | B2 |
19 legal events, as the office reported them to INPADOC
Over the term
Point at a mark for the eventEvents
| Event | Code | |
|---|---|---|
| Receipt of annual feesJAPANESE INTERMEDIATE CODE: R250R250 | R250 | |
| Receipt of annual feesJAPANESE INTERMEDIATE CODE: R250R250 | R250 | |
| Receipt of annual feesJAPANESE INTERMEDIATE CODE: R250R250 | R250 | |
| Receipt of annual feesJAPANESE INTERMEDIATE CODE: R250R250 | R250 | |
| Receipt of annual feesJAPANESE INTERMEDIATE CODE: R250R250 | R250 | |
| Receipt of annual feesJAPANESE INTERMEDIATE CODE: R250R250 | R250 | |
| Receipt of annual feesJAPANESE INTERMEDIATE CODE: R250R250 | R250 | |
| Certificate of patent or registration of utility modelJAPANESE INTERMEDIATE CODE: R150R150 | R150 | |
| First payment of annual fees (during grant procedure)JAPANESE INTERMEDIATE CODE: A61A61 | A61 | |
| Written decision to grant a patent or to grant a registration (utility model)JAPANESE INTERMEDIATE CODE: A01A01 | A01 | |
| Decision of grant or rejection writtenTRDD | TRDD | |
| Request for written amendment filedJAPANESE INTERMEDIATE CODE: A523A521 | A521 | |
| Notification of reasons for refusalJAPANESE INTERMEDIATE CODE: A131A131 | A131 | |
| Report on accelerated examinationJAPANESE INTERMEDIATE CODE: A971005A975 | A975 | |
| Report on retrievalJAPANESE INTERMEDIATE CODE: A971007A977 | A977 | |
| Request for written amendment filedJAPANESE INTERMEDIATE CODE: A523A521 | A521 | |
| Explanation of circumstances concerning accelerated examinationJAPANESE INTERMEDIATE CODE: A871A871 | A871 | |
| Request for written amendment filedJAPANESE INTERMEDIATE CODE: A523A521 | A521 | |
| Written request for application examinationJAPANESE INTERMEDIATE CODE: A621A621 | A621 |
Numbers
- Publication
- 6000362
- Application
- 2014534799
Titles2
- Japanese
- 非線形光学結晶の水素不活性化
- English
- Hydrogen inactivation of nonlinear optical crystals
Classification
- CPC, 25
- G02F1/3551
- C30B29/10
- G02F1/3501
- H10P95/94
- C30B33/12
- G01N21/55
- G01N21/9501
- H01S3/109
- C30B33/00
- C30B33/02
- G01N21/59
- G01N2021/3568
- G01N2021/3595
- G01N2021/8477
- G01N2021/8822
- G01N21/3563
- G01N2021/9511
- G01N2201/06113
- H01S3/094
- H01S3/027
- H01S3/1666
- G01N21/8806
- H10P36/00
- G01N21/84
- G02F1/353
- IPC, 2
- G02F1 37
- H10P95 00
