Light-emitting device and electronic device

0001Regarding the light emitting device. The present invention also relates to an electronic device equipped with the light emitting device.

0002In recent years, the development of technology in the display field has been remarkable, especially regarding high definition and thinning. Market needs have also been boosted and significant progress has been made.

0003The next phase in this area is a flexible disc with a curved display. Attention is being paid to the commercialization of play, and various proposals regarding the flexibility of displays (See, for example, Patent Document 1). In addition, a light emitting device using a flexible substrate It is also possible to reduce the weight compared to the case of using glass of the thickness normally used. ..

0004As a method for manufacturing a light emitting device using a flexible substrate, a flexible base is used. A method of forming a light emitting element or other element directly on a plate, using a glass substrate of normal thickness After manufacturing the optical element, the substrate is thinned and made flexible by polishing the substrate. A method of giving properties or removing the substrate and attaching it to a flexible substrate, or a normal thickness After manufacturing a light emitting element or other element on a glass substrate, the light emitting element or other element is provided. A method of peeling off the layer to be formed and transposing it on a flexible substrate has been proposed.

0005However, the light emitting element and other elements are accurately formed on a substrate having sufficient flexibility. It is difficult to achieve. Therefore, instead of manufacturing semiconductor elements, the light emitting elements can be painted separately. Even the installation of a lar filter is difficult. In addition, a light emitting device with a thin glass substrate is sufficient. It is hard to say that it has lexible properties. Furthermore, even if the glass substrate is removed, the productivity is poor. There is a problem. On the other hand, the method of manufacturing a light emitting device using the peeling and transposing steps is a ratio. It is relatively simple, and it is easy to manufacture semiconductor elements and paint light emitting elements separately. In addition, This is a very promising method for manufacturing a light emitting device that can sufficiently secure lexible properties.

<p num="0006"><patcit num="1"><text>Japanese Unexamined Patent Publication No. 2001-237064</text></patcit></p>

<p num="0007"> However, in the case of a light emitting device to which such a manufacturing method is applied, FPC (Flexible) It is difficult to connect an external connection such as Printed Circuits) It was.</p><p num="0008"> Therefore, one aspect of the present invention is a light emitting device having a structure capable of easily providing an external connection portion. An object of the present invention is to provide a setting and a method for producing the same.</p>

<p num="0009"> The above-mentioned problem is that an external connection terminal is provided in a region provided with a through hole penetrating the element forming layer. It can be solved by an optical device.</p><p num="0010"> That is, one aspect of the present invention is provided on a flexible lower support and a lower support. In addition, a base insulating film having a through hole, a light emitting element provided on the base insulating film, and a light emitting element. Under the flexible upper support provided, the electrodes provided in the through holes, and the underlying insulating film. An external connection terminal that is provided and electrically connects to the electrode, and an outside that electrically connects to the external connection terminal It is a light emitting device having a unit connection portion.</p><p num="0011"> Further, one aspect of the present invention includes a flexible lower support and a lower support provided on the lower support. A base insulating film having a through hole, a light emitting element provided on the base insulating film, and a light emitting element provided on the light emitting element. The flexible upper support, the external connection terminals provided in the through holes, and the underlying insulating film. It is a light emitting device provided in the above and having an external connection portion for electrically connecting to an external connection terminal.</p><p num="0012"> Further, in one aspect of the present invention, in the light emitting device having the above configuration, the lower support is externally connected. It is a light emitting device that does not overlap with the terminals.</p><p num="0013"> Further, one aspect of the present invention is the lower support and the external contact in the light emitting device having the above configuration. It is a light emitting device in which a protective member is provided under the continuation part.</p><p num="0014"> Further, one aspect of the present invention is that in a light emitting device having the above configuration, the lower support is externally contacted. It is a light emitting device having a notch in a portion where a continuation terminal is formed.</p><p num="0015"> Further, one aspect of the present invention is that in a light emitting device having the above configuration, the lower support is externally contacted. It is a light emitting device having an opening in a portion where a continuation terminal is formed.</p><p num="0016"> Further, one aspect of the present invention is the side (first side) provided with the external connection terminal in the light emitting device. From the lower part to the length from the side facing the side where the external connection terminal is provided (second side) From the side of the support near the external connection terminal (third side) to the side close to the external connection terminal It is a light emitting device with a short length up to the side (fourth side).</p><p num="0017"> Further, one aspect of the present invention is that in a light emitting device having the above configuration, the lower support is externally contacted. It is a light emitting device characterized in that it is provided so as to cover at least a part of a continuation portion.</p>

<p num="0018"> A light emitting device having such a configuration has a structure in which an external connection portion can be easily provided. It is a light emitting device.</p>

0019<figref num="1">An example of the light emitting device according to the first embodiment.</figref><figref num="2">An example of the method for manufacturing the light emitting device according to the first embodiment.</figref><figref num="3">An example of the method for manufacturing the light emitting device according to the first embodiment.</figref><figref num="4">An example of the light emitting device according to the first embodiment.</figref><figref num="5">An example of the light emitting device according to the first embodiment.</figref><figref num="6">An example of the light emitting device according to the first embodiment.</figref><figref num="7">An example of the light emitting device according to the first embodiment.</figref><figref num="8">An example of the electronic device according to the second embodiment.</figref>

0020Hereinafter, embodiments of the present invention will be described with reference to the drawings. However, many of the present inventions It is possible to carry out in different aspects of the present invention, and deviates from the gist of the present invention and its scope. It is easily understood by those skilled in the art that the form and details can be changed in various ways. Obey Therefore, the interpretation is not limited to the description of the present embodiment.

0021(Embodiment 1) The light emitting device in the present embodiment has a flexible upper support and a flexible lower support. An element forming layer containing a light emitting element and a thin film transistor (hereinafter referred to as TFT) between the holding bodies. A light emitting device having a TFT provided on the lower support side and a light emitting element on the upper support side. Is provided.

0022The light emitting device is a TFT and a light emitting element on a highly heat resistant substrate such as glass via a release layer. After providing the element forming layer including the child and the upper support, the element forming layer and the upper support Is peeled off from the peeling layer, and the lower support is adhered to the peeling surface formed by the peeling. Therefore, it is a light emitting device manufactured. After forming the element forming layer, an upper support is provided. Before peeling, it is peeled off by a peeling substrate provided on the element forming layer, and further peeled off. A method of pasting the upper support on the substrate or a method of replacing the upper support and the peeling substrate, etc. It may be a light emitting device manufactured by. Luminescence produced by such a production method Since the device is configured to attach the lower support later, it is a light emitting device manufactured on a glass substrate. Unlike the installation, the connection terminal cannot be formed in advance on the lower support. Therefore, peeling Cumbersome and delicate work such as connecting the FPC before the separation process was required.

0023In the light emitting device described in this embodiment, an external connection terminal is provided on the lower support side of the element forming layer. Has been done. The external connection terminal is electrically connected to the electrodes of the TFT and light emitting element, and is FPC. A power source or an externally generated signal is supplied to the light emitting device via an external connection portion such as. Also outside The part connection terminal emits light through at least an electrode formed in a through hole provided in the underlying insulating film. It is electrically connected to the element or the electrode of the TFT.

0024How can the through hole be formed so as to penetrate the underlying insulating film and expose the surface of the element forming layer? It may be formed, and is appropriately connected to the electrodes of the TFT and the light emitting element via contact holes. To.

0025In addition, when connecting the external connection part to the external connection terminal after adhering the lower support, the relevant The lower support is not provided in the portion corresponding to the external connection terminal. In other words, the lower support And the external connection terminal do not overlap. In other words, the lower support in this case corresponds to the external connection terminal. There are notches and openings in the part to be used. In addition, the lower support is shorter by the amount of the external connection. You may use your body to expose the external connection terminals. In this case, over the external connection and the lower support It is preferable to provide a protective member so that the external connection portion is not damaged. External connection to external connection When the lower support is glued after connecting to the continuation terminal, the lower support has less external connection. Both are provided covering a part.

0026The light emitting device of the present embodiment having the above configuration connects an external connection portion after the peeling step. can do. Therefore, the light emitting device of the present embodiment is provided with an external connection portion simply. It is a light emitting device capable of

0027FIGS. 1 (A) and 1 (B) show an example of a light emitting device according to the present embodiment.

0028FIG. 1A is a diagram showing an example of a light emitting device provided with a drive circuit area and a pixel area. Na Oh, the drive circuit area and the pixel area both have a TFT. First contact on the lower support 110 A coating layer 111 is provided. The first adhesive layer 111 is the underlying insulating film 112 and the lower support. It is glued to 110. On the underlying insulating film 112, the pixel TFT 114 and the drive circuit section The first electrode 117 of the light emitting element electrically connected to the TFT 115 and the pixel TFT 114 Is provided. In addition, although a plurality of them are provided in the light emitting device, one of them is shown in the figure. The part is shown. The light emitting element 127 is smaller than the first electrode 117 exposed from the partition wall 118. With the EL layer 119 containing the organic compound provided at least over the exposed first electrode 117 , It is composed of a second electrode 120 provided so as to cover the EL layer 119. Second The upper support 122 is adhered to the electrode 120 by a second adhesive layer 121. Ma Further, in the external connection area, the external connection terminal 132 is provided under the underlying insulating film 112, and is outside. The part connection terminal 132 is electrically connected to the electrode 131 formed in the through hole 130. Also , The external connection unit 133 is connected to the external connection terminal 132. The lower support 110 Is not provided in the part corresponding to the external connection terminal 132. In addition, a drive circuit area is provided. It does not have to be. Further, the light emitting device may have a CPU unit. Also, here, the element The cambium 116 refers to the underlying insulating film 112 to the second electrode 120.

0029In FIG. 1 (A), the through hole 130 penetrates from the interlayer insulating film 134 to the underlying insulating film 112. An example of passing is shown. The electrode 131 provided in the through hole 130 and the electrode of the TFT or the light emitting element It is connected via wiring such as wiring 135 or a contact hole. In addition, Fig. 1 (A) The electrode 139 inside is a wiring electrode connected to the source region and the drain region of the TFT.

0030FIG. 1 (B) shows an example of a light emitting device different from that of FIG. 1 (A). In Fig. 1 (B) An example is shown in which the through hole 130 penetrates the gate insulating film 136 and the underlying insulating film. like this In this case, the electrode 131 provided in the through hole 130 is formed in the contact hole 138. It is in contact with the wiring or the electrode provided on the interlayer insulating film 134 such as the electrode 139 via the electrode 137. Just continue.

0031Subsequently, an example of the method for manufacturing the light emitting device according to the present embodiment will be described with reference to FIG. To.

0032First, the underlying insulating film 112 is placed on the fabrication substrate 200 having an insulating surface via the release layer 201. A semiconductor layer 250, a gate insulating film 251, a gate electrode 252, and a protective insulating film are formed on the semiconductor layer 250. 253, an interlayer insulating film 254 is formed (see Fig. 2 (A)).

0033The release layer 201 is subjected to a tongue by a sputtering method, a plasma CVD method, a coating method, a printing method, or the like. Ten (W), Molybdenum (Mo), Titanium (Ti), Tantalum (Ta), Niobium (Nb) , Nickel (Ni), Cobalt (Co), Zirconium (Zr), Zinc (Zn), Ruteni Umm (Ru), Rhodium (Rh), Palladium (Pd), Osmium (Os), Iridium An element selected from element (Ir) and silicon (Si), or an alloy material containing an element as a main component. Alternatively, a layer made of a compound material containing an element as a main component is formed as a single layer or laminated. In addition, peeling If the delamination contains silicon, the silicon can be amorphous, microcrystalline, or polycrystalline. I. Here, the coating methods include a spin coating method, a droplet ejection method, and a dispensing method. Includes nozzle printing method and slot die coating method.

0034When the release layer 201 has a single layer structure, it is preferably a tungsten layer, a molybdenum layer, or a data. A layer containing a mixture of gustene and molybdenum is formed. Also, the oxide of tungsten Or a layer containing an oxide nitride, a layer containing a molybdenum oxide or an oxide nitride, or a tongue It is also possible to form a layer containing an oxide or oxide nitride of a mixture of stainless steel and molybdenum. To. The mixture of tungsten and molybdenum is, for example, tungsten and molybdenum. Corresponds to the alloy of.

0035When the release layer 201 has a laminated structure, a tungsten layer or molybdenum layer is preferably used as the first layer. A layer containing a mixture of tungsten and molybdenum is formed, and the tongue is used as the second layer. Oxides, nitrides, oxide nitrides of stainless steel, molybdenum or a mixture of tungsten and molybdenum Form a layer containing a substance or nitride oxide.

0036As the release layer 201, a laminated structure of a layer containing tungsten and a layer containing an oxide of tungsten. When forming a structure, an insulation formed by forming a layer containing tungsten and forming an oxide on the upper layer. By forming a layer, a tungsten oxide is contained at the interface between the tungsten layer and the insulating layer. You may take advantage of the formation of layers. Furthermore, the surface of the layer containing tungsten is heated with a hot acid. Tongues are treated by chemical treatment, oxygen plasma treatment, treatment with a solution with strong oxidizing power such as ozone water, etc. A layer containing an oxide of ten may be formed. In addition, plasma treatment or heat treatment involves oxygen and nitrogen. Elemental, nitrous oxide, nitrous oxide alone, or a mixed gas atmosphere of gas and other gases You may go below. In addition, the layer containing tungsten and the nitride of tungsten, the nitride of oxide, Alternatively, the same method as above can be applied when forming a laminated structure of layers containing nitride oxides. it can. That is, after forming a layer containing tungsten, a silicon nitride layer and oxidative nitriding are placed on the layer. Forming a silicon layer or a silicon nitride oxide layer, or nitriding or nitriding , Or by performing nitriding and oxidation treatment, a silicon nitride layer of tungsten and silicon oxide A layer containing a silicon oxide layer or a silicon nitride layer can be formed.

0037Subsequently, the underlying insulating film 112 is formed. The underlying insulating film 112 may have a single-layer structure or a laminated structure. I do not care. In the case of a laminated structure, the underlying insulating film 112 is a TFT or light emitting element such as moisture or metal. A dense and highly blocking film for suppressing the invasion of substances that promote deterioration of the TFT, and TFT It is preferable to form a laminated structure with a film for stabilizing the characteristics of.

0038Silicon nitride, silicon oxide, and silicon nitride are highly blocking films. Examples thereof include an insulating film containing nitrogen and silicon. Method of forming a film with high blocking property As an example, the film formation temperature is set to 250 ° C to 400 ° C, and other conditions are set to known conditions. A method using the plasma CVD method can be mentioned.

0039The membranes for stabilizing the characteristics of TFT are silicon oxide film, silicon nitride film, and silicon oxide nitride. It can be produced by using an inorganic insulating film such as a silicon oxide film or a silicon nitride film.

0040Materials that form the semiconductor layer 250, which is the active layer of the TFT, are typified by silane and German. Amorphous (amorphous) produced by the vapor phase growth method or sputtering method using the semiconductor material gas A semiconductor, the amorphous semiconductor, is crystallized using light energy or thermal energy. Polycrystalline semiconductor, or microcrystal (also called semi-amorphous or microcrystal) ) Semiconductors and the like can be used. In addition, semiconductors containing organic materials as the main component are used. be able to. The semiconductor layer 250 is formed by a sputtering method, LPCVD method, plasma CVD method, etc. Can form a film.

0041Microcrystalline semiconductors are semi-cheap, intermediate between amorphous and single crystals, considering the Gibbs free energy. It belongs to a fixed state. That is, a half having a third state that is stable in free energy. It is a conductor, has short-range order, and has lattice distortion. Columnar or acicular crystals are paired with the substrate surface And it is growing in the normal direction. Microcrystalline silicon, which is a typical example of microcrystalline semiconductors, is a llama. 520 cm whose spectrum shows single crystal silicon^-1Shifting to the lower wavenumber side .. That is, 520 cm showing single crystal silicon^-1And 480 cm showing amorphous silicon^-1There is a peak in the Raman spectrum of microcrystalline silicon between. Also, unbonded hands (dung) At least 1 atomic% or more of hydrogen or halogen to terminate the ring bond) It is included. In addition, it contains rare gas elements such as helium, argon, krypton, and neon. By further promoting lattice distortion, stability is increased and a good polycrystalline semiconductor film can be obtained. To.

0042This microcrystalline semiconductor film is a high-frequency plasma CVD method with a frequency of several tens of MHz to several hundreds of MHz. Or it can be formed by a microwave plasma CVD device with a frequency of 1 GHz or higher. To. Typically, SiH₄, Si₂H₆, SiH₂Cl₂, SiHCl₃, SiCl₄, SiF₄It can be formed by diluting silicon hydride such as hydrogen with hydrogen. Also, hydrogenation In addition to recon and hydrogen, a kind selected from helium, argon, krypton, neon Can be diluted with a plurality of rare gas elements to form a microcrystalline semiconductor film. At these times The flow rate ratio of hydrogen to silicon hydride is 5 times or more and 200 times or less, preferably 50 times or more. It is 150 times or less, more preferably 100 times.

0043Typical examples of amorphous semiconductors include hydrogenated amorphous silicon and crystalline semiconductors. A typical example is polysilicon. For polysilicon (polycrystalline silicon) Uses polysilicon as the main material, which is formed through a process temperature of 800 ° C or higher. Main materials are so-called high-temperature polysilicon and polysilicon formed at a process temperature of 600 ° C or less. Amorphous silicon using so-called low-temperature polysilicon used as a material, or an element that promotes crystallization. It contains polysilicon, which is a crystallized recon. Of course, as mentioned above, A crystalline semiconductor or a semiconductor having a crystalline phase as a part of the semiconductor layer can also be used.

0044In addition, as the material of the semiconductor layer, a simple substance such as silicon (Si) or germanium (Ge) is used. Other compound semiconductors such as GaAs, InP, SiC, ZnSe, GaN, SiGe, etc. Can also be used. In addition, zinc oxide (ZnO) and tin oxide (SnO), which are oxide semiconductors,₂), Magnesium zinc oxide, gallium oxide, indium oxide, and the above oxide semiconductors. An oxide semiconductor composed of a plurality of the above can be used. For example, zinc oxide and inn An oxide semiconductor composed of gallium oxide and gallium oxide can also be used. When an oxide semiconductor is used as the semiconductor layer, the gate insulating layer is Y.₂O₃, Al₂O₃, T iO₂, It is good to use a stack of them, gate electrode layer, source electrode layer, drain electrode As the layer, ITO, Au, Ti, etc. may be used. Also, add In, Ga, etc. to ZnO. It can also be added.

0045When a crystalline semiconductor layer is used as the semiconductor layer, there are various methods for producing the crystalline semiconductor layer. Method (laser crystallization method, thermal crystallization method, or using elements that promote crystallization such as nickel The thermal crystallization method, etc.) may be used. In addition, the microcrystalline semiconductor is irradiated with a laser to crystallize and crystallize. It can also enhance sex. Amorphous silicon film without the introduction of elements that promote crystallization Amorphous by heating at 500 ° C for 1 hour in a nitrogen atmosphere before irradiating the laser beam. The hydrogen concentration in the silicon film is 1 x 10²⁰atoms / cm³Reduce to: This When a laser beam is applied to an amorphous silicon film containing a large amount of hydrogen, the amorphous silicon film is destroyed. Because it will be done.

0046As a method of introducing the metal element into the amorphous semiconductor layer, the metal element is introduced into the amorphous semiconductor layer. There is no particular limitation as long as it is a method that can exist on the surface or inside, for example, a sputtering method, CV. D method, plasma treatment method (including plasma CVD method), adsorption method, method of applying metal salt solution The law can be used. Of these, the method using a solution is simple and adjusts the concentration of metal elements. It is useful in that it is easy to arrange. At this time, the wettability of the surface of the amorphous semiconductor layer is improved. UV in an oxygen atmosphere to improve and spread the aqueous solution over the entire surface of the amorphous semiconductor layer For light irradiation, thermal oxidation, treatment with ozone water containing hydroxyl radicals or hydrogen peroxide, etc. Therefore, it is desirable to form an oxide film.

0047In addition, in the crystallization step of crystallizing the amorphous semiconductor layer to form the crystalline semiconductor layer, the amorphous semi-amorphous Heat treatment (55) by adding elements that promote crystallization (also referred to as catalyst elements and metal elements) to the conductor layer. Crystallization may be carried out at 0 ° C to 750 ° C for 3 minutes to 24 hours). Promotes (promotes) crystallization Elements to be used include iron (Fe), nickel (Ni), cobalt (Co), and ruthenium (R). u), rhodium (Rh), palladium (Pd), osmium (Os), iridium (Ir) ), Platinum (Pt), Copper (Cu) and Gold (Au). Can be done.

0048Crystalline semiconductor layer to remove or reduce elements that promote crystallization from the crystalline semiconductor layer A semiconductor layer containing an impurity element is formed in contact with the gettering sink to function as a gettering sink. Impurity elements include impurity elements that impart n-type, impurity elements that impart p-type, and rare gas sources. Element or the like can be used. For example, phosphorus (P), nitrogen (N), arsenic (As), anti Mon (Sb), Bismuth (Bi), Boron (B), Helium (He), Neon (Ne), One or more selected from Argon (Ar), Krypton (Kr), Xenon (Xe) Seeds can be used. A rare gas element is added to the crystalline semiconductor layer containing an element that promotes crystallization. A semiconductor layer containing the mixture is formed and heat-treated (3 minutes to 24 hours at 550 ° C to 750 ° C). crystalline The elements that promote crystallization contained in the semiconductor layer move into the semiconductor layer containing the rare gas element and move to the semiconductor layer. Elements that promote crystallization in the crystalline semiconductor layer are removed or reduced. Then getterin The semiconductor layer containing the rare gas element that has become gas sink is removed.

0049Crystallization of the amorphous semiconductor layer may be a combination of heat treatment and crystallization by laser irradiation. , Heat treatment or laser light irradiation may be performed independently or multiple times.

0050Further, the crystalline semiconductor layer may be formed directly on the substrate by the plasma method. Also, Plas The crystalline semiconductor layer may be selectively formed on the substrate by using the Ma method.

0051As a semiconductor film whose main component is an organic material, a certain amount of carbon or carbon can be used in combination with other elements. Uses a semiconductor membrane whose main component is a substance consisting of carbon allotropes (excluding diamond). Can be done. Specifically, pentacene, tetracene, thiophene oligoma derivatives, pheni Lene derivative, phthalocyanine compound, polyacetylene derivative, polythiophene derivative, Anin pigment and the like can be mentioned.

0052The gate insulating film 251 and the gate electrode 252 may be manufactured by a known structure and method. Example For example, the gate insulating film 251 is a single layer of silicon oxide or a laminate of silicon oxide and silicon nitride. It may be manufactured with a known structure such as a structure, and the gate electrode 252 may be manufactured by a CVD method or a sputtering method. , Ag, Au, Cu, Ni, Pt, Pd, Ir, Rh, W, Al using the droplet ejection method, etc. , Ta, Mo, Cd, Zn, Fe, Ti, Si, Ge, Zr, Ba May be formed of an alloy material or a compound material containing an element as a main component. In addition, phosphorus etc. Semiconductor films typified by polycrystalline silicon films doped with pure elements and AgPdCu alloys May be used. Further, it may have a single-layer structure or a multi-layer structure.

0053In the drawing, an example of a top gate transistor is shown, but of course Alternatively, a bottom gate or a transistor having another known structure may be used.

0054Subsequently, after forming the protective insulating film 253 made of an inorganic insulating material, the organic insulating material or An interlayer insulating film 254 made of an inorganic insulating material is formed. Silicon oxide as an inorganic insulating material , Silicon nitride, silicon oxide, silicon nitride, and the like can be used. Yes Machine insulation materials include acrylic, polyimide, polyamide, polyimide amide, and benzosi. Crobutene or the like can be used.

0055After forming the interlayer insulating film 254, the layer is formed by patterning and etching. The semiconductor layer 250 of the TFT is reached in the inter-insulating film 254, the protective insulating film 253, and the gate insulating film 251. Contact holes, interlayer insulating film 254, protective insulating film 253, gate insulating film 25 A through hole is formed in 1 and the underlying insulating film 112. As for the through hole, the contact hole is the semiconductor layer 2 It is formed by continuing etching even after reaching 50. At this time, the etching method The interlayer insulating film 254, the protective insulating film 253, and the gate insulating film for the semiconductor layer 250 are used. Select an etching method and conditions with a sufficiently large selection ratio of 251 and the underlying insulating film 112. ..

0056After that, wiring electrodes such as electrodes 131 are formed in the through holes and electrodes 139 are formed in the contact holes. .. The electrodes 131 and 139 may be manufactured in the same process, or different materials may be produced in different processes. It may be formed with a fee.

0057Further, the through hole and the contact hole may be produced in separate steps. In the case of this method, go through first O O on the surface of the exposed release layer 201 that forms a through hole₂Oxidation treatment by ashing etc. Since the electrode 131 can be formed after this, the adhesion between the electrode 131 and the release layer 201 can be improved. It can be reduced so that peeling can be performed more smoothly in the subsequent peeling process. (See Fig. 2 (B)).

0058Subsequently, the transparent conductive film is used to form the first electrode 117 of the light emitting element. 1st electrode 1 If 17 is the anode, the material of the transparent conductive film is indium oxide (In).₂O₃) And oxidation Tin oxide alloy (In₂O₃SnO₂: ITO) etc. by sputtering method or vacuum deposition method It can be formed and used by using. Indium tin oxide zinc oxide alloy (In₂O₃ZnO) may be used. Zinc oxide (ZnO) is also a suitable material, and visible light. Use zinc oxide with gallium (Ga) added to increase the transmittance and conductivity of Can be done. When the first electrode 117 is used as the cathode, a material with a low work function such as aluminum Use an ultra-thin film of the material, or use a laminated structure of a thin film of such a substance and a transparent conductive film as described above. It can be produced by using it.

0059After that, the interlayer insulating film 254 and the first electrode 117 are covered with an organic insulating material or an inorganic insulating material. To form an insulating film, the surface of the first electrode 117 is exposed and the first electrode is exposed. The partition wall 118 is formed by processing so as to cover the end portion of 117.

0060Subsequently, the EL layer 119 is formed into a film. The laminated structure of the EL layer 119 is not particularly limited. A layer containing a substance with high electron transportability or a layer containing a substance with high hole transportability, and a layer with high electron injection property Layer containing substances, layer containing highly hole-injectable substances, bipolar (electron and hole transportability) A layer containing a substance (high substance), a layer containing a luminescent substance, and the like may be appropriately combined to form a structure. Example For example, a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, an electron injection layer, etc. are appropriately combined. Can be configured. In the present embodiment, the EL layer 119 is a hole injection layer, a hole transport layer, and a hole emission. A configuration having an optical layer and an electron transport layer will be described. The materials that make up each layer are shown below. Specifically shown.

0061The hole injection layer is a layer provided in contact with the anode and containing a substance having a high hole injection property. Molyb Den oxide, vanadium oxide, ruthenium oxide, tungsten oxide, manganese oxidation Things and the like can be used. In addition, phthalocyanine (abbreviation: H)₂Pc) and copper lid Russia Phthalocyanine compounds such as nin (CuPC), 4,4'-bis [N- (4-dipheni) Luaminophenyl) -N-Phenylamino] Biphenyl (abbreviation: DPAB), 4,4'- Bis (N- {4- [N'-(3-Methylphenyl) -N-Phenylamino] Phenyl}- Aromatic amine compounds such as N'-phenylamino) biphenyl (abbreviation: DNTPD), or Is polyethylene dioxythiophene / polystyrene sulfonic acid (PEDOT / PSS) etc. The hole injection layer can also be formed by using a polymer or the like.

0062In addition, as a hole injection layer, a compound containing an acceptor substance in a substance with high hole transport property. Combined materials can also be used. In addition, the substance with high hole transport property contains an acceptor substance. Select the material that forms the electrode regardless of the work function of the electrode by using the material Can be done. In other words, not only the material with a large work function as the first electrode 117, but also the work function Small materials can be used. As an acceptor substance, 7,7,8,8-te Tracyano-2,3,5,6-tetrafluoroquinodimethane (abbreviation: F)₄-TCNQ), Chloranil and the like can be mentioned. In addition, as an acceptor substance, transition metal oxidation Acids of metals belonging to Group 4 to Group 8 in the Periodic Table of the Elements A product can be mentioned. Specifically, vanadium oxide, niobium oxide, tantalum oxide, Chromium oxide, molybdenum oxide, tungsten oxide, manganese oxide, and rhenium oxide receive electrons. It is preferable because it is highly tolerant. Among them, molybdenum oxide is stable in the atmosphere and has hygroscopicity. It is preferable because it is low and easy to handle.

0063Aromatic amine compounds and carbazole are examples of substances with high hole transport properties used in composite materials. Derivatives, aromatic hydrocarbons, polymer compounds (oligomers, dendrimers, polymers, etc.), etc. , Various compounds can be used. The organic compound used for the composite material is positive. It is preferably an organic compound having high pore transportability. Specifically, 10^-6cm²After / Vs It is preferably a substance having the above hole mobility. However, it has higher hole transportability than electrons. If it is a good substance, a substance other than these may be used. In the following, it will be used for composite materials The organic compounds that can be produced are specifically listed.

0064For example, as an aromatic amine compound, N, N'-di (p-tolyl) -N, N'-difu Enyl-p-phenylenediamine (abbreviation: DTDPPA), 4,4'-bis [N- (4- (4-) Diphenylaminophenyl) -N-Phenylamino] Biphenyl (abbreviation: DPAB), 4 , 4'-Bis (N- {4- [N'-(3-Methylphenyl) -N-Phenylamino] Fe Nil} -N'-Phenylamino) Biphenyl (abbreviation: DNTPD), 1,3,5-Tris [N- (4-diphenylaminophenyl) -N-phenylamino] Benzene (abbreviation: DP A3B) etc. can be mentioned.

0065Specific examples of the carbazole derivative that can be used in the composite material include 3-[N-. (9-Phenylcarbazole-3-yl) -N-Phenylamino] -9-Phenylcarba Zol (abbreviation: PCzPCA1), 3,6-bis [N- (9-phenylcarbazole-3) -Il) -N-Phenylamino] -9-Phenylcarbazole (abbreviation: PCzPCA2) , 3- [N- (1-naphthyl) -N- (9-phenylcarbazole-3-yl) amino] -9-Phenylcarbazole (abbreviation: PCzPCN1) and the like can be mentioned.

0066In addition, other carbazole derivatives that can be used in composite materials include 4,4'-di. (N-carbazolyl) Biphenyl (abbreviation: CBP), 1,3,5-Tris [4- (N-ka) Rubazolyl) Phenyl] Benzene (abbreviation: TCPB), 9- [4- (10-Phenyl-9) -Anthryl) Phenyl] -9H-carbazole (abbreviation: CzPA), 1,4-bis [4 -(N-carbazolyl) phenyl] -2,3,5,6-tetraphenylbenzene, etc. Can be

0067Examples of aromatic hydrocarbons that can be used in composite materials include 2-tert. -Butyl-9,10-di (2-naphthyl) anthracene (abbreviation: t-BuDNA), 2- tert-Butyl-9,10-di (1-naphthyl) anthracene, 9,10-bis (3, 5-diphenylphenyl) anthracene (abbreviation: DPPA), 2-tert-butyl-9 , 10-bis (4-phenylphenyl) anthracene (abbreviation: t-BuDBA), 9,1 0-di (2-naphthyl) anthracene (abbreviation: DNA), 9,10-diphenyl anthracene Sen (abbreviation: DPAnth), 2-tert-butylanthracene (abbreviation: t-BuAn) th), 9,10-bis (4-methyl-1-naphthyl) anthracene (abbreviation: DMNA) , 2-tert-Butyl-9,10-bis [2- (1-naphthyl) phenyl] anthrace , 9,10-Bis [2- (1-naphthyl) phenyl] anthracene, 2,3,6,7- Tetramethyl-9,10-di (1-naphthyl) anthracene, 2,3,6,7-tetrame Chill-9,10-The (2-naphthyl) anthracene, 9,9'-Biantril, 10,1 0'-diphenyl-9,9'-bianthryl, 10,10'-bis (2-phenylphenyl) Le)-9,9'-Biantril, 10,10'-Bis [(2,3,4,5,6-Pentaf Enil) Phenyl]-9,9'-bianthracene, anthracene, tetracene, rubrene, Perylene, 2,5,8,11-tetra (tert-butyl) perylene and the like can be mentioned. Ma In addition, pentacene, coronene and the like can also be used. The aromatic hydrocarbon Is 1x10^-6cm²In addition to having a hole mobility of / Vs or higher, the above aromatic hydrocarbons When the film is formed by the thin film deposition method, it shrinks from the viewpoint of vapor deposition during vapor deposition and film quality after film deposition. It is more preferable that the number of carbon atoms forming the ring is 14 to 42.

0068The aromatic hydrocarbon that can be used for the composite material may have a vinyl skeleton. I. Examples of aromatic hydrocarbons having a vinyl group include 4,4'-bis (2,2-). Diphenylvinyl) Biphenyl (abbreviation: DPVBi), 9,10-bis [4- (2,2-) Diphenylvinyl) Phenyl] Anthracene (abbreviation: DPVPA) and the like.

0069In addition, poly (N-vinylcarbazole) (abbreviation: PVK) and poly (4-vinyltrife) Nylamine) (abbreviation: PVTPA), poly [N- (4- {N'-[4- (4-diphenyl) Amino) Phenyl] Phenyl-N'-Phenyl Amino} Phenyl) Methacrylamide] ( Abbreviation: PTPDMA), poly [N, N'-bis (4-butylphenyl) -N, N'-bis Polymer compounds such as (phenyl) benzidine] (abbreviation: Poly-TPD) can also be used. it can.

0070The hole transport layer is a layer containing a substance having a high hole transport property. As a substance with high hole transportability , For example, 4,4'-bis [N- (1-naphthyl) -N-phenylamino] biphenyl ( Abbreviation: NPB) and N, N'-bis (3-methylphenyl) -N, N'-diphenyl- [1 , 1'-biphenyl] -4,4'-diamine (abbreviation: TPD), 4,4', 4''-tri Su (N, N-diphenylamino) triphenylamine (abbreviation: TDATA), 4,4', 4''-Tris [N- (3-Methylphenyl) -N-Phenylamino] Triphenylami (Abbreviation: MTDATA), 4,4'-Bis [N- (Spiro-9,9'-Bifluolen- 2-Il) -N-Phenylamino] Aromatic amineation of biphenyl (abbreviation: BSPB) A mixture or the like can be used. The substances mentioned here are mainly 10^-6cm²Positive above / Vs It is a substance having pore mobility. However, if the substance has a higher hole transport property than electrons, this Others may be used. The layer containing a substance with high hole transport property is only a single layer. Instead, two or more layers made of the above substances may be laminated.

0071In addition, as a hole transport layer, poly (N-vinylcarbazole) (abbreviation: PVK) or poly (abbreviation: PVK) High molecular compounds such as 4-vinyltriphenylamine) (abbreviation: PVTPA) can also be used. it can.

0072The light emitting layer is a layer containing a light emitting substance. The type of light emitting layer is mainly composed of luminescent substances. Even if it is a so-called single film light emitting layer, the so-called host that disperses the light emitting material in the host material It does not matter whether it is a to-guest type light emitting layer.

0073There is no limitation on the luminescent material that can be used, and a known fluorescent or phosphorescent material can be used. Wear. Examples of the fluorescent material include N, N'-bis [4- (9H-carbazole-9). -Il) Phenyl] -N, N'-diphenylstilbene-4,4'-diamine (abbreviation: Y) GA2S), 4- (9H-carbazole-9-yl) -4'-(10-phenyl-9-a In addition to triphenylamine (abbreviation: YGAPA), etc., the emission wavelength is 450 nm or more. 4- (9H-carbazole-9-yl) -4'-(9,10-diphenyl-2-ant) Lil) Triphenylamine (abbreviation: 2YGAPPA), N, 9-diphenyl-N- [4- (10-Phenyl-9-anthryl) Phenyl] -9H-carbazole-3-amine (abbreviation) Name: PCAPA), Perylene, 2,5,8,11-Tetra-tert-Butyl Perylene ( Abbreviation: TBP), 4- (10-Phenyl-9-Anthril) -4'-(9-Phenyl-9) H-carbazole-3-yl) triphenylamine (abbreviation: PCBAPA), N, N'' -(2-tert-Butylanthracene-9,10-diyldi-4,1-phenylene) bi Su [N, N', N'-triphenyl-1,4-phenylenediamine] (abbreviation: DPABP A), N, 9-diphenyl-N- [4- (9,10-diphenyl-2-anthril) fe Nil] -9H-carbazole-3-amine (abbreviation: 2PCAPPA), N- [4- (9,, 10-Diphenyl-2-anthryl) Phenyl] -N, N', N'-triphenyl-1, 4-Phenylene diamine (abbreviation: 2DPAPPA), N, N, N', N', N'', N' ', N''', N'''-Octaphenyldibenzo [g, p] Chrysene-2,7,10, 15-Tetraamine (abbreviation: DBC1), Coumarin 30, N- (9,10-diphenyl- 2-Anthril) -N, 9-diphenyl-9H-carbazole-3-amine (abbreviation: 2P) CAPA), N- [9,10-bis (1,1'-biphenyl-2-yl) -2-anthri Le] -N, 9-diphenyl-9H-carbazole-3-amine (abbreviation: 2PCABPhA) ), N- (9,10-diphenyl-2-anthryl)-N, N', N'-triphenyl- 1,4-phenylenediamine (abbreviation: 2DPAPA), N- [9,10-bis (1,1' -Biphenyl-2-yl) -2-anthril] -N, N', N'-triphenyl-1,4 -Phenylene diamine (abbreviation: 2DPABPhA), 9,10-bis (1,1'-buffet) Nyl-2-yl) -N- [4- (9H-carbazole-9-yl) phenyl] -N-fe Nylanthracene-2-amine (abbreviation: 2YGABPhA), N, N, 9-triphenyl Anthracene-9-amine (abbreviation: DPhAPhA), coumarin 545T, N, N'-di Phenylquinacridone (abbreviation: DPQd), rubrene, 5,12-bis (1,1'-biff) Enil-4-yl) -6,11-diphenyltetracene (abbreviation: BPT), 2- (2-{ 2- [4- (Dimethylamino) Phenyl] Ethenyl} -6-Methyl-4H-Pyran-4- Iliden) Propanedinitrile (abbreviation: DCM1), 2- {2-methyl-6- [2- (2) , 3,6,7-Tetrahydro-1H, 5H-benzo [ij] quinolizidine-9-yl) ete Nil] -4H-pyran-4-iriden} propandinitrile (abbreviation: DCM2), N, N , N', N'-Tetrakis (4-methylphenyl) Tetracene-5,11-Diamine (abbreviation) Name: p-mPhTD), 7,14-diphenyl-N, N, N', N'-Tetrakis (4- Methylphenyl) Asenaft [1,2-a] Fluoranthene-3,10-Diamine (abbreviation) : p-mPhAFD), 2- {2-Isopropyl-6- [2- (1,1,7,7-Tetra) Methyl-2,3,6,7-Tetrahydro-1H, 5H-Benzodiazepine [ij] Quinolizidine-9- Il) ethenyl] -4H-pyran-4-iriden} propandinitrile (abbreviation: DCJT) I), 2- {2-tert-butyl-6- [2- (1,1,7,7-tetramethyl-2, 3,6,7-Tetrahydro-1H, 5H-benzo [ij] quinolizidine-9-yl) eteni Le] -4H-pyran-4-iriden} propandinitrile (abbreviation: DCJTB), 2- ( 2,6-bis {2- [4- (dimethylamino) phenyl] ethenyl} -4H-pyran-4 -Iliden) Propanedinitrile (abbreviation: BisDCM), 2- {2,6-bis [2- ( 8-Methoxy-1,1,7,7-Tetramethyl-2,3,6,7-Tetrahydro-1H, 5H-benzo [ij] quinolizidine-9-yl) ethenyl] -4H-pyran-4-ylidene } Propane dinitrile (abbreviation: BisDCJTM) and the like. With phosphorescent materials Then, for example, bis [2- (4', 6'-difluorophenyl) pyridinato-N, C²^’] Iridium (III) Tetrakis (1-Pyrazolyl) Borato (abbreviation: FIr6) In addition, the emission wavelength is in the range of 470 nm to 500 nm, and the screw [2- (4', 6'-diflu) Orophenyl) pyridinato-N, C^2’] Iridium (III) picolinate (abbreviation: F) Irpic), bis [2- (3', 5'-bistrifluoromethylphenyl) pyridinato -N, C^2’] Iridium (III) picolinate (abbreviation: Ir (CF)₃ppy)₂(p ic))), bis [2- (4', 6'-difluorophenyl) pyridinato-N, C^2’]I Lydium (III) Acetylacetoneate (abbreviation: FIracac), emission wavelength 500 Tris (2-phenylpyridinato) iridium (III) (abbreviation) above nm (green emission) : Ir (ppy)₃), Bis (2-phenylpyridinato) iridium (III) acetyl Acetylacetone (abbreviation: Ir (ppy)₂(acac)), Tris (Acetylacetone) (Monophenanthroline) Terbium (III) (abbreviation: Tb (acac)₃(Phen )), Bis (benzo [h] quinolinato) iridium (III) acetylacetoneate (abbreviation) Name: Ir (bzq)₂(acac)), bis (2,4-diphenyl-1,3-oxazola) To-N, C^2’) Iridium (III) Acetylacetoneate (abbreviation: Ir (dpo))₂(acac)), bis [2- (4'-perfluorophenylphenyl) pyridinato] iri Zium (III) Acetylacetoneate (abbreviation: Ir (p-PF-ph))₂(acac) ), Bis (2-phenylbenzothiazolato-N, C^2’) Iridium (III) Acetyl Acetylacetone (abbreviation: Ir (bt))₂(acac)), screw [2- (2'-benzo [4,, 5-α] thienyl) pyridinat-N, C^3’] Iridium (III) Acetyl Acetyl Toner (Abbreviation: Ir (btp)₂(acac)), Bis (1-Phenylisoquinolinato-N, C^2’) Iridium (III) Acetylacetoneate (abbreviation: Ir (piq))₂(aca c)), (Acetylacetonato) bis [2,3-bis (4-fluorophenyl) quinoxa Linato] Iridium (III) (abbreviation: Ir (Fdpq))₂(acac)), (Acetyl Acetylacetone) Bis (2,3,5-triphenylpyrazinato) Iridium (III) (abbreviation : Ir (tppr)₂(acac)), 2,3,7,8,12,13,17,18-Ok Taethyl-21H, 23H-Porphyrin Shirokane (II) (abbreviation: PtOEP), Tris ( 1,3-Diphenyl-1,3-Propanedionato) (Monophenanthroline) Europium Mu (III) (abbreviation: Eu (DBM)₃(Phen)), Tris [1- (2-Tenoyl) -3,3,3-trifluoroacetonato] (monophenanthroline) Europium (II I) (Abbreviation: Eu (TTA)₃(Phen)) and the like. Materials such as the above or others The material may be selected from the known materials in consideration of the emission color of each light emitting element.

0074When using a host material, for example, tris (8-quinolinolato) aluminum (III) ) (Abbreviation: Alq), Tris (4-methyl-8-quinolinolato) Aluminum (III) (Abbreviation: Almq₃), Bis (10-Hydroxybenzo [h] quinolinato) Beryllium ( II) (Abbreviation: BeBq₂), Bis (2-methyl-8-quinolinolato) (4-phenylf Enorato) Aluminum (III) (abbreviation: BAlq), Bis (8-quinolinolato) Zinc (II) (abbreviation: Znq), bis [2- (2-benzoxazolyl) phenolato] zinc ( II) (abbreviation: ZnPBO), bis [2- (2-benzothiazolyl) phenolato] zinc ( II) Metal complexes such as (abbreviation: ZnBTZ), 2- (4-biphenylyl) -5- (4-t ert-Butylphenyl) -1,3,4-oxadiazole (abbreviation: PBD), 1,3- Bis [5- (p-tert-butylphenyl) -1,3,4-oxadiazole-2-i Le] Benzene (abbreviation: OXD-7), 3- (4-biphenylyl) -4-phenyl-5- ( 4-tert-Butylphenyl) -1,2,4-triazole (abbreviation: TAZ), 2,2 ', 2''-(1,3,5-benzenetriyl) Tris (1-phenyl-1H-benzoy) Midazole) (abbreviation: TPBI), vasophenanthroline (abbreviation: BPhen), basoki Uproin (abbreviation: BCP), 9- [4- (5-phenyl-1,3,4-oxadiazo) Heterocyclic compounds such as ru-2-yl) phenyl] -9H-carbazole (abbreviation: CO11) , NPB (or α-NPD), TPD, BSPB and other aromatic amine compounds. To. In addition, anthracene derivatives, phenanthrene derivatives, pyrene derivatives, chrysene derivatives , Condensed polycyclic aromatic compounds such as dibenzo [g, p] chrysene derivatives. Specifically Is 9,10-diphenylanthracene (abbreviation: DPAnth), N, N-diphenyl- 9- [4- (10-Phenyl-9-anthryl) phenyl] -9H-carbazole-3- Amine (abbreviation: CzA1PA), 4- (10-Phenyl-9-Anthryl) Triphenyl Amine (abbreviation: DPhPA), 4- (9H-carbazole-9-yl) -4'-(10- Phenyl-9-anthryl) Triphenylamine (abbreviation: YGAPA), N, 9-dife Nyl-N- [4- (10-Phenyl-9-Anthryl) Phenyl] -9H-Carbazole -3-Amine (abbreviation: PCAPA), N, 9-diphenyl-N- {4- [4- (10-fu) Enyl-9-anthryl) Phenyl] Phenyl} -9H-carbazole-3-amine (abbreviation) Name: PCAPBA), N,9-diphenyl-N- (9,10-diphenyl-2-anthri) Le) -9H-carbazole-3-amine (abbreviation: 2PCAPA), 6,12-dimethoxy -5,11-diphenylchrysene, N, N, N', N', N'', N'', N''', N '''-Octaphenyldibenzo [g, p] Chrysene-2,7,10,15-Tetraami (Abbreviation: DBC1), 9- [4- (10-Phenyl-9-Anthryl) Phenyl] -9 H-carbazole (abbreviation: CzPA), 3,6-diphenyl-9- [4- (10-pheni) Le-9-anthryl) phenyl] -9H-carbazole (abbreviation: DPCzPA), 9,1 0-bis (3,5-diphenylphenyl) anthracene (abbreviation: DPPA), 9,10- Di (2-naphthyl) anthracene (abbreviation: DNA), 2-tert-butyl-9,10- Di (2-naphthyl) anthracene (abbreviation: t-BuDNA), 9,9'-bianthracene (abbreviation: t-BuDNA) Abbreviation: BANT), 9,9'-(Stilbene-3,3'-Zeil) Diphenanthrene (Abbreviation) Name: DPNS), 9,9'-(Stilbene-4,4'-Zyle) Diphenanthrene (abbreviation) : DPNS2), 3,3', 3''-(benzene-1,3,5-triyl) tripylene ( Abbreviation: TPB3) and so on. From these and known substances, each is Larger than the energy gap of the scattered luminescent material (triplet excitation energy in the case of phosphorescence) Each layer has a material with a positive energy gap (triplet excitation energy). A substance that exhibits transportability that matches the transportability that should be possessed may be selected.

0075The electron transport layer is a layer containing a substance having a high electron transport property. For example, Tris (8-Kinolino) Rat) Aluminum (abbreviation: Alq), Tris (4-methyl-8-quinolinolato) Aluminum Nium (abbreviation: Almq)₃), Bis (10-Hydroxybenzo [h] Kinolinato) Beriri Umm (abbreviation: BeBq₂), Bis (2-methyl-8-quinolinolato) (4-phenylfe Norat) Quinoline skeleton such as aluminum (abbreviation: BAlq) or benzoquinoline skeleton It is a layer made of a metal complex or the like having. In addition, other screws [2- (2-hydroxypheni) Le) Benz oxazolato] Zinc (abbreviation: Zn (BOX))₂), Bis [2- (2-Hydroxy) Siphenyl) benzothiazolate] Zinc (abbreviation: Zn (BTZ))₂) Na which oxazole-based , A metal complex having a thiazole-based ligand and the like can also be used. Furthermore, after the metal complex Outside, 2- (4-biphenylyl) -5- (4-tert-butylphenyl) -1,3, 4-Oxadiazole (abbreviation: PBD) and 1,3-bis [5- (p-tert-butyl) Phenyl) -1,3,4-oxadiazole-2-yl] benzene (abbreviation: OXD-7) , 3- (4-Biphenylyl) -4-phenyl-5- (4-tert-butylphenyl)- 1,2,4-Triazole (abbreviation: TAZ), Basophenanthroline (abbreviation: BPhen) ), Basocuproin (abbreviation: BCP), etc. can also be used. The substances mentioned here are , Mainly 10^-6cm²It is a substance with electron mobility of / Vs or more. In addition, electricity rather than hole A substance other than the above may be used as the electron transport layer as long as it is a substance having high child transportability.

0076Further, the electron transport layer is not limited to a single layer, but two or more layers made of the above substances are laminated. It may be a thing.

0077Further, a layer for controlling the movement of electron carriers may be provided between the electron transport layer and the light emitting layer. This is done by adding a small amount of a substance with high electron trapping property to the material with high electron transporting property as described above. It is a layer that regulates carrier balance by suppressing the movement of electron carriers. It becomes possible. Such a configuration is generated by electrons penetrating through the light emitting layer. It is very effective in suppressing problems that occur (for example, reduction in device life).

0078Further, an electron injection layer may be provided in contact with the electrode serving as a cathode. As an electron injection layer, Lithium fluoride (LiF), cesium fluoride (CsF), calcium fluoride (CaF)₂) Etc. Such alkali metals or alkaline earth metals or compounds thereof can be used. Example For example, an alkali metal or an alkaline earth metal or the like in a layer made of a substance having electron transportability. Those containing these compounds, for example, those containing magnesium (Mg) in Alq Etc. can be used. The electron injection layer is made of a substance having electron transportability. By using an alkali metal or alkaline earth metal contained in the layer, a second It is more preferable because electron injection from the electrode 120 is performed efficiently.

0079When the second electrode 120 is used as a cathode as the substance forming the second electrode 120 Metals, alloys, electrically conductive compounds, with a small work function (specifically 3.8 eV or less) And mixtures thereof and the like can be used. As a specific example of such a cathode material, , Elements belonging to Group 1 or Group 2 of the Periodic Table of the Elements, namely lithium (Li) and cesium Alkali metals such as (Cs), magnesium (Mg), calcium (Ca), strobe Alkaline earth metals such as metalloids (Sr) and alloys containing them (MgAg, AlLi) ), Europium (Eu), Ytterbium (Yb) and other rare earth metals and these Examples include alloys. However, an electron injection layer should be provided between the cathode and the electron transport layer. Depending on the size of the work function, Al, Ag, ITO, or silicon or oxidation Various conductive materials such as silicon-containing indium oxide-tin oxide can be used as the cathode. Can be done. For these conductive materials, the sputtering method, the inkjet method, the spin coating method, etc. are used. It can be used to form a film.

0080Further, when the second electrode 120 is used as an anode, the work function is large (specifically, 4.0eV and above) Metals, alloys, conductive compounds, and mixtures thereof can be used. preferable. Specifically, for example, indium-tin oxide (ITO: Indium T) in Oxide), indium oxide containing silicon or silicon oxide-oxide Indium Zinc Oxide (IZO), Oxidation Examples thereof include indium oxide (IWZO) containing tungsten and zinc oxide. this These conductive metal oxide films are usually formed by a sputtering method, but a sol-gel method or the like can be used. You may make it by using. For example, indium oxide-zinc oxide (IZO) films are oxidized. Sputtering using a target with 1 to 20 wt% zinc oxide added to indium Can be formed. In addition, tungsten oxide containing tungsten oxide and zinc oxide The film of IWZO contains 0.5 to 5 wt% of tungsten oxide and acid with respect to indium oxide. It can be formed by the sputtering method using a target containing 0.1 to 1 wt% of zinc oxide. it can. In addition, gold (Au), platinum (Pt), nickel (Ni), tungsten (W), Chromium (Cr), molybdenum (Mo), iron (Fe), cobalt (Co), copper (Cu), pa Examples thereof include radium (Pd) and nitrides of metallic materials (for example, titanium nitride). Ma In addition, by providing the above-mentioned composite material in contact with the anode, electricity is generated regardless of the work function. The material of the pole can be selected.

0081The device forming layer 116 can be formed by the above steps (see FIG. 2 (C)).

0082Subsequently, the element forming layer 116 and the upper support 122 are bonded to each other by using the second adhesive layer 121. Then, the element forming layer 116 is peeled from the manufacturing substrate 200 in the peeling layer 201. This , The element forming layer 116 is supported by the flexible upper support 122 and has a through hole. The electrode 131 provided on the surface of the element forming layer 116 is exposed on the surface opposite to the upper support 122. It will be in the state of being put out. (See Figure 2 (D)).

0083The material of the second adhesive layer 121 includes a reaction-curable adhesive, a thermosetting adhesive, and an ultraviolet hard adhesive. It is possible to use various curable adhesives such as photo-curable adhesives such as chemical adhesives and anaerobic adhesives. Wear.

0084As the upper support 122, acrylic resin or polyethylene terephthalate (PET) , Polyester resin such as polyethylene naphthalate (PEN), Polyacrylonitrile tree Fat, polyimide resin, polymethylmethacrylate resin, polycarbonate resin (PC), Polyether sulphon resin (PES), polyamide resin, cycloolefin resin, poly Flexible made of styrene resin, polyamide-imide resin, polyvinyl chloride resin, metal, etc. A film or substrate can be used.

0085The upper support 122 contains nitrogen and silicon such as silicon nitride and silicon oxide in advance. Forming a protective layer with low water permeability such as a film or a film containing nitrogen and aluminum such as aluminum nitride. You may leave it as a film.

0086Further, in the step of FIG. 2 (D), a support for peeling is used instead of the upper support 122. It may be peeled off, and then the upper support may be adhered using an adhesive, or a support for peeling may be used. After peeling, the peeling support may be removed and the upper support may be adhered using an adhesive.

0087In the peeling step, a peeling layer is formed between the manufacturing substrate and the layer to be peeled, and the peeling layer and the layer to be peeled are separated. A metal oxide film is provided between them, and the metal oxide film is fragile by crystallization and is placed on the metal oxide film. A method of peeling off the provided layer to be peeled off, containing hydrogen between the highly heat-resistant fabrication substrate and the layer to be peeled off. An amorphous silicon film is provided, and the amorphous silicon film is irradiated or etched with a laser beam. A method of peeling the peeled layer by removing the above, forming a peeled layer between the manufactured substrate and the peeled layer. A metal oxide film is provided between the peeled layer and the layer to be peeled, and the metal oxide film is fragile due to crystallization. Then, a part of the peeling layer is made into a solution or NF.₃, BrF₃, ClF₃Halogen fluoride gas such as After removing by etching with, a method of peeling off with a weakened metal oxide film, or a cover The production substrate on which the release layer is formed is mechanically deleted or a solution or NF₃, BrF₃, ClF₃Etc. A method of removing by etching with a halogen fluoride gas or the like can be appropriately used. Also , A film containing nitrogen, oxygen, hydrogen, etc. as a release layer (for example, an amorphous silicon film containing hydrogen, water) Using an element-containing alloy film, oxygen-containing alloy film, etc.), irradiate the release layer with laser light and include it in the release layer. A method of releasing nitrogen, oxygen, and hydrogen as gas to promote the separation between the layer to be separated and the substrate. You may use it.

0088Further, the transposition step can be performed more easily by combining a plurality of the above peeling methods. .. That is, laser light irradiation, etching to the peeling layer with gas or solution, sharp knife or After mechanically removing with a scalpel etc. to make the peeling layer and the layer to be peeled easy to peel off , It is also possible to peel off by physical force (by machine etc.).

0089Further, the liquid is permeated into the interface between the peeling layer and the peeled layer to peel the peeled layer from the manufactured substrate. Alternatively, the peeling may be performed by a method of peeling while sprinkling a liquid such as water when peeling. ..

0090As another peeling method, when the peeling layer 201 is made of tungsten, it is an ammony. A. It is preferable to perform peeling while etching the peeling layer with a mixed solution of water and hydrogen peroxide solution.

0091Subsequently, a first adhesive layer 111 is used to support the lower surface of the exposed element forming layer 116. Glue body 110. The lower support 110 does not adhere to the part where the external connection terminal is formed, At this stage, the electrode 131 is in an exposed state. After this, electrically to the electrode 131 The external connection terminal 132 to be connected is formed, and the external connection unit 133 is connected to the external connection terminal 132. Therefore, the light emitting device according to the present embodiment shown in FIG. 1 (A) can be manufactured (FIG. 2 (A). See E)). The exposed portion of the electrode 131 is connected to the external connection end without providing the external connection terminal 132. You may use it as a child.

0092The material of the first adhesive layer 111 includes a reaction-curable adhesive, a thermosetting adhesive, and an ultraviolet hard adhesive. It is possible to use various curable adhesives such as photo-curable adhesives such as chemical adhesives and anaerobic adhesives. Wear.

0093As the lower support 110, acrylic resin or polyethylene terephthalate (PET) , Polyester resin such as polyethylene naphthalate (PEN), Polyacrylonitrile tree Fat, polyimide resin, polymethylmethacrylate resin, polycarbonate resin (PC), Polyether sulphon resin (PES), polyamide resin, cycloolefin resin, poly Flexible made of styrene resin, polyamide-imide resin, polyvinyl chloride resin, metal, etc. A film or substrate can be used.

0094The lower support 110 contains nitrogen and silicon such as silicon nitride and silicon oxide in advance. Forming a protective layer with low water permeability such as a film or a film containing nitrogen and aluminum such as aluminum nitride. You may leave it as a film.

0095The upper support 122, the lower support 110, the first adhesive layer 111, and the second adhesive layer In 121, fibrous bodies may be contained in these materials. The fiber is an organic compound or High-strength fibers of inorganic compounds are used. High-strength fibers are specifically tensile modulus or young. It refers to fibers with a high rate, and typical examples are polyvinyl alcohol-based fibers and polyester. Lu-based fiber, polyamide-based fiber, polyethylene-based fiber, aramid-based fiber, polyparafenile Examples include benzobisoxazole fiber, glass fiber, or carbon fiber. Glass fiber Examples thereof include glass fibers using E glass, S glass, D glass, Q glass and the like. .. These are used in the state of woven cloth or non-woven fabric, and the fiber body is impregnated with organic resin to make organic resin. The cured structure may be used as an upper support or a lower support. Upper support When a structure consisting of a fibrous body and an organic resin is used as the lower support, it is resistant to bending and local pressing. This is a preferable configuration because the reliability of the element to be used is improved.

0096The substrate or adhesive layer in the direction of extracting light from the light emitting element contains the above-mentioned fibers. When spilled, the fiber is to reduce the interference of light from the light emitting element with the outside. Make the body a nanofiber with a diameter of 100 nm or less, or refraction of the fiber and an organic resin or adhesive It is preferable to match the rates.

0097Further, the first adhesive layer 111 and the lower support 110, or the second adhesive layer 121 and the upper support Even if it plays both roles of the holding body 122, the fiber body is impregnated with the organic resin and the organic resin is hardened. A modified structure can be used. At this time, the organic resin of the structure is a reaction hard. For those whose curing progresses by applying additional treatment such as chemical type, thermosetting type, ultraviolet curable type, etc. It is good to be there.

0098Next, referring to FIG. 3, another example of the method for manufacturing the light emitting device according to the present embodiment. explain.

0099A base insulating film 112 is formed on the fabrication substrate 200 via a release layer 201, and a semiconductor is formed on the underlying insulating film 112. The layer 250 and the gate insulating film 251 are formed in the same manner as described above until they are formed. Gate out After forming the rim film 251, gate insulation is performed by patterning and etching. Through holes are formed in the film 251 and the underlying insulating film 112 (see FIG. 3 (A)).

0100After that, the electrode 131 and the gate electrode 252 are formed in the through hole (see FIG. 3 (B)). electrode 131 and gate electrode 252 may be manufactured in the same process or may be formed by different processes and materials. You may. The gate electrode 252 may be formed before the through hole is formed. At this time After forming the protective insulating film 253 on the electrode electrode 252, the through hole is formed with the protective insulating film 253 and the game. It may be formed over the insulating film 251 and the underlying insulating film 112.

0101In addition, the surface of the exposed release layer 201 is O.₂After performing oxidation treatment by ashing etc. By forming the electrode 131, the adhesion to the release layer 201 can be reduced, and the subsequent release The peeling can be performed more smoothly in the process.

0102After forming the electrode 131 and the gate electrode 252, apply the protective insulating film 253 and the interlayer insulating film 254. The layer is formed in the same manner as described above, and then patterned and etched to form a layer. The semiconductor layer 250 of the TFT is reached in the inter-insulating film 254, the protective insulating film 253, and the gate insulating film 251. Contact holes, interlayer insulating film 254, protective insulating film 253 and electrodes 131 With the electrode 137 and the TFT wiring electrode that form the contact hole 138 and connect to the electrode 131. A certain electrode 139 and the like are formed (see FIG. 3 (C)).

0103After forming the electrodes 137 and 139, the electrodes 137 and 139 are formed in the same manner as described above. The light emitting device shown in FIG. 1 (B) can be manufactured.

0104In addition, in order to reinforce the external connection portion 133, the lower support 110 and the outside are shown as shown in FIG. 4 (A). It is preferable to provide the protective member 450 over the unit connecting portion 133. Protective member 450 It can be formed by using an epoxy resin, an acrylic resin, a silicone resin, or the like.

0105Further, when the lower support is adhered after connecting the external connection portion 133 to the light emitting device, the figure is shown in the figure. Adhere the lower support 110 over the surface of the external connection 133 as in 4 (B). With, the external connection portion can be protected in the same manner. At this time, the lower support is the external connection part. It may be provided so as to cover at least a part.

0106Next, a view seen from the lower support side of the module of the light emitting device (also called an EL module). Is shown in Fig. 5. In FIG. 5, the pixel portion 50 is placed on the first adhesive layer and the lower support 401. 2. The source side drive circuit 504 and the gate side drive circuit 503 are formed. Also 4 02 is the part where the element forming layer, the second adhesive layer and the upper support are provided, and is the element type. External connection terminal 132 on the lower support side and not covered by the lower support in stratification And an external connection unit 133 connected to the external connection unit 133 is provided. These pixel parts and drive circuits It can be obtained by following the above-mentioned production method.

0107In addition, in Fig. 5 (A), the lower support is externally connected from one side close to the external connection terminal of the light emitting device. The length to one side (520 in the figure) located on the center side of the light emitting device of the continuous terminal is at least short. Configuration, Figure 5 (B) has a notch in the lower support corresponding to the external connection terminal Configuration, Fig. 5 (C) shows a structure with an opening in the part of the lower support corresponding to the external connection terminal. It is a figure which showed an example of the formation.

0108FIG. 6 shows the lower support when the light emitting device described in the present embodiment is multi-chamfered on a large substrate. An example of a body sticking pattern is illustrated, and element forming layers corresponding to a plurality of light emitting devices are transposed. Upper support 550, part 551 that becomes one light emitting device by dividing, lower support 552 is illustrated. Note that FIG. 6 (A) is shown in FIG. 5 (A), and FIG. 6 (B) is shown in FIG. 5 (B). , Fig. 6 (C) corresponds to Fig. 5 (C), respectively. Pre-patterned lower support and roll It is also easy to automate the process of attaching the lower support by wrapping it around. Is. Further, the light emitting device described in the present embodiment is externally connected after the lower support is bonded. Since it is possible to connect the parts, the lower support is attached in this way and divided into each light emitting device. After that, the external connection part can be connected. This is when considering mass production of light emitting devices , Is a very important process element.

0109This is because, in the case of small and medium-sized light emitting devices, multi-chamfering with a large substrate is required to reduce costs. Is indispensable. However, the external connection terminal is provided on the lower support side of the element forming layer. If there is no light emitting device, the external connection must be connected before gluing the top support Therefore, it is very difficult to perform multi-chamfering. However, the light emitting device described in this embodiment Since the external connection terminal is provided on the lower support side of the element forming layer, multi-chamfering is performed. It is possible to contribute to mass production and cost reduction.

0110Further, as shown in FIG. 5, it is possible to connect the external connection portion after adhering the lower support. External connection to the lower support side of the element cambium and not covered by the lower support When the light emitting device on which the terminals are formed is multi-chamfered, it is divided into individual light emitting devices before being outside. Since the connection part can be connected, it is divided into individual light emitting devices with the external connection part attached. It is suitable for mass production and automation because it can be divided very easily compared to the case of This is a preferable configuration.

01117 (A) and 7 (B) correspond to A-A'and B-B', which are examples of the light emitting devices shown in FIG. 5 (B). It is sectional drawing which shows a part of the part, and about the protection member which protects a light emitting device and an external connection part. It is an example.

0112The light emitting device shown in FIG. 7 (A) has fluidity and visible light transmission after being connected to the external connection part. The protective member 701 is formed by covering the surface with an organic resin having a resin and then drying it. It has been. The protective member 701 not only protects the external connection part, but also has an upper support and a lower support. It can also play a role in protecting against scratches. Can be used for protective member 701 Materials include epoxy resin, acrylic resin, silicone resin, and various hard coating agents. And so on.

0113FIG. 7B is a diagram showing an example of an bonding method of the lower support 702 that also serves as a protective member. .. After forming the external connection part, apply an adhesive to the surface of the external connection part to bond the lower support. Made by. Cut along the external connection to the lower support that protrudes from the external connection Put in and wrap it from the side of the light emitting device to the upper support side as shown in the B-B'cross section. By doing so, the external connection portion can be protected more firmly. External connection Before connecting the parts, expose the external connection terminals and glue the lower support, and then further Fig. 7 ( A protective member may be provided as in the lower support 702 shown in B).

0114The light emitting device described above is a light emitting device to which an external connection portion can be easily provided. From this, the light emitting device is a light emitting device suitable for mass production.

0115(Embodiment 2) In the present embodiment, an electronic device including the light emitting device shown in the first embodiment as a part thereof will be described. I will reveal.

0116As an example of the electronic device having the light emitting element shown in the first embodiment, a video camera and a digital device Cameras such as le camera, goggle type display, navigation system, sound reproduction equipment Places (car audio, audio components, etc.), computers, game machines, mobile information terminals (Mobile computer, mobile phone, portable game machine or e-book, etc.), equipped with recording media Image playback device (specifically, Digital Versatile Disc (DVD) A device equipped with a display device capable of reproducing a recording medium such as) and displaying the image). To. Specific examples of these electronic devices are shown in FIG.

0117FIG. 8 (A) illustrates a television receiver. Television image reception shown in Fig. 8 (A) The machine has a housing 9101, a support 9102, a display 9103, a speaker 9104, and a video. Includes input terminals 9105 and the like. The display unit 9103 of this television receiver is according to the first embodiment. It is produced by using the light emitting device shown in. Flexible, long life and easy to make The television receiver equipped with the light emitting device according to the first embodiment that can be manufactured is the display unit 910. In 3, it is possible to have a curved display part and the price is relatively low while realizing weight reduction. It becomes possible to make it a valuable product.

0118A computer is illustrated in FIG. 8 (B). The computer shown in Fig. 8 (B) is the main unit 9 201, housing 9202, display 9203, keyboard 9204, external connection port 9205 , Including pointing device 9206 and the like. The display 9203 of this computer is actually It is produced by using the light emitting device shown in Form 1 of the application. Flexible and long life The computer equipped with the light emitting device according to the first embodiment, which can be easily manufactured by In 203, it is possible to have a curved display part and price comparison while realizing weight reduction It is possible to make the product inexpensive.

0119FIG. 8 (C) illustrates a mobile phone. The mobile phone shown in Fig. 8 (C) is the main body 9401, Housing 9402, display 9403, audio input 9404, audio output 9405, operation keys 9 Includes 406, external connection port 9407, etc. The display unit 9403 of this mobile phone is a form of implementation. It is produced by using the light emitting device shown in the state 1. Flexible, long life and simple The mobile phone equipped with the light emitting device according to the first embodiment, which can be manufactured in the above, is displayed on the display unit 9403. It is possible to have a curved display part, and it is a relatively inexpensive quotient while realizing weight reduction. It becomes possible to make a product. In addition, for mobile phones in the embodiment in which weight reduction is achieved, Even if it has various added values, it can be kept at a weight that is suitable for carrying, and the mobile phone is highly functional. It has a configuration suitable for a mobile phone.

0120The camera is illustrated in FIG. 8 (D). The camera shown in Fig. 8 (D) shows the main unit 9501. Unit 9502, housing 9503, external connection port 9504, remote control receiver 9505, image receiver 9506, battery 9507, voice input 9508, operation keys 9509, eyepiece 951 Including 0 mag. The display unit 9502 of this camera uses the light emitting device shown in the first embodiment. Produced by. Described in Embodiment 1, which is flexible, has a long life, and can be easily manufactured. A camera equipped with the light emitting device of the above may have a curved display unit in the display unit 9502. It is possible to make a product with a relatively low price while realizing a possible and lightweight product.

0121A display is illustrated in FIG. 8 (E). The display shown in Fig. 8 (E) is the main body 9 601, display unit 9602, external memory insertion unit 9603, speaker unit 9604, operation keys Including 9605 etc. The main unit 9601 also has a TV receiving antenna, an external input terminal, and an external output. Terminals, batteries, etc. may be installed. The display unit 9602 of this display is actually It is produced by using the light emitting device shown in Form 1 of the application. Flexible display 9 The 602 can be stored by winding it inside the main body 9601, which is suitable for carrying. .. The light emitting device according to the first embodiment, which is flexible, has a long life, and can be easily manufactured, is mounted. The display is priced in the display unit 9602 while achieving portability and weight reduction. It is possible to make a relatively inexpensive product.

0122As described above, the applicable range of the light emitting device shown in the first embodiment is extremely wide, and this light emitting device can be used. It can be applied to electronic devices in all fields.

0123110 lower support 111 Adhesive layer 112 Underlayer insulating film 114 pixel TFT 115 TFT 116 Element forming layer 117 Electrodes 118 bulkhead 119 EL layer 120 electrodes 121 Adhesive layer 122 Top support 127 light emitting element 130 through hole 131 electrode 132 External connection terminal 133 External connection 134 Interlayer insulating film 135 wiring 136 Gate insulating film 137 electrode 138 contact hole 139 Electrode 200 Fabrication board 201 release layer 250 semiconductor layer 251 Gate insulating film 252 Gate electrode 253 Protective insulating film 254 Interlayer insulating film 401 Lower support 450 protective material 502 pixel part 503 Gate side drive circuit 504 Source side drive circuit 550 top support 552 lower support 701 Protective member 702 Lower support 9101 chassis 9102 Support stand 9103 Display 9104 Speaker section 9105 Video input terminal 9201 body 9202 chassis 9203 Display 9204 keyboard 9205 External connection port 9206 Pointing device 9401 body 9402 chassis 9403 Display 9404 Voice input section 9405 Audio output section 9406 Operation key 9407 External connection port 9501 body 9502 Display 9503 chassis 9504 External connection port 9505 Remote control receiver 9506 Image receiving part 9507 battery 9508 Voice input section 9509 Operation key 9510 Eyepiece 9601 body 9602 Display 9603 External memory insert 9604 Speaker section 9605 Operation key