Radio field intensity measurement device, and radio field intensity detector and game console using the same
4 claims: 2 independent, 2 dependent
- 1アンテナと、信号処理回路と、二次電池と、表示素子と、を有し、 前記信号処理回路は、第1の回路と、第2の回路と、第3の回路と、第1のダイオードと、第2のダイオードと、第1のトランジスタと、第2のトランジスタと、を有し、 前記第1の回路は、前記アンテナにより受信した信号を整流することができる機能を有し、 前記二次電池は、前記第1の回路からの信号により充電を行うことができる機能を有し、 前記第2の回路は、前記第1の回路からの信号の電位と、前記二次電池から出力された電位と、を比較することができる機能を有し、 前記第3の回路は、前記第1の回路からの信号を増幅することができる機能を有し、 前記表示素子は、前記第3の回路からの信号により動作することができる機能を有し、 前記第1の回路から出力された電位は、第1のダイオード及び第1のトランジスタを介して、前記二次電池に供給され、 前記第1の回路から出力された電位は、前記第3の回路に供給され、 前記二次電池から出力された電位は、第2のダイオード及び第2のトランジスタを介して、前記第3の回路に供給され、 前記第1のダイオードのアノードは、前記第1の回路と電気的に接続され、 前記第1のダイオードのカソードは、前記第1のトランジスタのソースまたはドレインの一方と電気的に接続され、 前記第1の トランジスタ のソースまたはドレインの他方は、前記 二次電池 と電気的に接続され、 前記第2のダイオードのアノードは、前記第2のトランジスタのソースまたはドレインの一方と電気的に接続され、 前記第2のダイオードのカソードは、前記第1の回路と電気的に接続され、 前記第2のダイオードのカソードは、前記第1のダイオードのアノードと電気的に接続され、 前記第2のトランジスタのソースまたはドレインの他方は、前記二次電池と電気的に接続され、 前記第2の回路は、前記第1の回路からの信号の電位が前記二次電池から出力された電位よりも大きい場合、前記第1のトランジスタをオン、前記第2のトランジスタをオフにすることができる機能を有し、 前記第2の回路は、前記第1の回路からの信号の電位が前記二次電池から出力された電位よりも小さい場合、前記第1のトランジスタをオフ、前記第2のトランジスタをオンにすることができる機能を有し、 前記第1のトランジスタは、前記アンテナと電気的に接続され、 前記第2のトランジスタは、異方導電性フィルム又は異方導電性ペーストを介して、前記二次電池と電気的に接続され、 前記表示素子は、前記信号処理回路と電気的に接続され、 前記第1のトランジスタは、インジウムと、ガリウムと、亜鉛と、酸素と、を有し、 前記第2のトランジスタは、インジウムと、ガリウムと、亜鉛と、酸素と、を有することを特徴とする装置。
- 2アンテナと、信号処理回路と、二次電池と、表示素子と、を有し、 前記信号処理回路は、第1の回路と、第2の回路と、第3の回路と、第1のダイオードと、第2のダイオードと、第1のトランジスタと、第2のトランジスタと、を有し、 前記第1の回路は、前記アンテナにより受信した信号を整流することができる機能を有し、 前記二次電池は、前記第1の回路からの信号により充電を行うことができる機能を有し、 前記第2の回路は、前記第1の回路からの信号の電位と、前記二次電池から出力された電位と、を比較することができる機能を有し、 前記第3の回路は、前記第1の回路からの信号を増幅することができる機能を有し、 前記表示素子は、前記第3の回路からの信号により動作することができる機能を有し、 前記第1の回路から出力された電位は、第1のダイオード及び第1のトランジスタを介して、前記二次電池に供給され、 前記第1の回路から出力された電位は、前記第3の回路に供給され、 前記二次電池から出力された電位は、第2のダイオード及び第2のトランジスタを介して、前記第3の回路に供給され、 前記第1のダイオードのアノードは、前記第1の回路と電気的に接続され、 前記第1のダイオードのカソードは、前記第1のトランジスタのソースまたはドレインの一方と電気的に接続され、 前記第1の トランジスタ のソースまたはドレインの他方は、前記 二次電池 と電気的に接続され、 前記第2のダイオードのアノードは、前記第2のトランジスタのソースまたはドレインの一方と電気的に接続され、 前記第2のダイオードのカソードは、前記第1の回路と電気的に接続され、 前記第2のダイオードのカソードは、前記第1のダイオードのアノードと電気的に接続され、 前記第2のトランジスタのソースまたはドレインの他方は、前記二次電池と電気的に接続され、 前記第2の回路は、前記第1の回路からの信号の電位が前記二次電池から出力された電位よりも大きい場合、前記第1のトランジスタをオン、前記第2のトランジスタをオフにすることができる機能を有し、 前記第2の回路は、前記第1の回路からの信号の電位が前記二次電池から出力された電位よりも小さい場合、前記第1のトランジスタをオフ、前記第2のトランジスタをオンにすることができる機能を有し、 前記第1のトランジスタは、前記アンテナと電気的に接続され、 前記第2のトランジスタは、異方導電性フィルム又は異方導電性ペーストを介して、前記二次電池と電気的に接続され、 前記表示素子は、前記信号処理回路と電気的に接続され、 前記第1のトランジスタは、亜鉛と、酸素と、を有し、 前記第2のトランジスタは、亜鉛と、酸素と、を有することを特徴とする装置。
- 3請求項1又は2において、 前記信号処理回路は、シート材上に設けられていることを特徴とする装置。
- 4請求項3において、 前記シート材は、帯電防止フィルムであることを特徴とする装置。
Independent claims4
71 paragraphs, as filed
0001The present invention relates to a radio field intensity measuring device capable of displaying the radio wave strength of a radio signal. in particular Using a chromic material, radio field intensity measurement that changes the color according to the radio field strength of the radio signal The present invention relates to a device, a radio wave intensity detector using the radio wave intensity measuring device, and an amusement device.
0002In recent years, with the development of electronic technology and the advent of the advanced information society, wireless devices using wireless communication Has become widespread and is used in all fields such as military, medical, telecommunications, education, and commerce. Wireless communication, which uses radio waves as a communication medium, can overcome time and distance and transmit information immediately. It makes the best use of the characteristics of radio waves, which is important in modern society. It is positioned as one of the business foundations.
0003Radio waves are a type of electromagnetic waves, and the sky while electric and magnetic fields exchange energy with each other. It is a wave that travels between them. Since the radio waves are invisible, is it a radio wave facility or wireless device? There is widespread concern that the radio waves radiated from these areas may affect the human body. A device that easily measures and displays the radio wave intensity of the radio wave from a device that transmits radio waves is desired. ..
0004There are various methods for measuring the radio field strength. For example, in Patent Document 1, the antenna Radio wave detection that connects the rectifier circuit and the lamp and measures the radio wave intensity according to the luminous intensity of the lamp. A device has been proposed. Further, in Patent Document 2, the antenna, the storage means, and the notification means are referred to. Electromagnetic wave strength is measured by connecting and driving the notification means by the power storage means. Wave monitoring devices have been proposed.
0005The block diagram of FIG. 38 regarding the specific configuration of the radio field intensity measuring device described in Patent Document 1. It will be described using.
0006The radio wave intensity measuring device 3800 shown in FIG. 38 attracts the received radio wave 3820 by the antenna 3810. It is converted into a lead signal, and the lead signal is input to the rectifier circuit 3811. The rectifier circuit 3811 is described above. It rectifies the inductive signal and powers the lamp 3812. That is, to the strength of the received radio wave 3820 Since a proportional amount of power is supplied to the lamp, the intensity of the radio wave depends on the luminosity of the lamp that lights up. appear.
0007Further, in the electromagnetic wave monitor device of Patent Document 2, a light emitting diode is used as a notification means. A configuration using an electric lamp and a liquid crystal display is disclosed.
<p num="0008"><patcit num="1"><text>Japanese Unexamined Patent Publication No. 2006-23817</text></patcit><patcit num="2"><text>Japanese Unexamined Patent Publication No. 2001-165973</text></patcit></p>
<p num="0009">However, in the radio wave intensity measuring device of Patent Document 1, a weak radio wave from a long distance is used. It is difficult to secure enough power to turn on the lamp, and the weak radio waves are measured. There was a problem that it could not be done. In addition, the electromagnetic wave monitor device of Patent Document 2 is weak. Electricity for measuring radio waves and driving light emitting diodes, discharge lamps, and liquid crystal displays, which are notification means. Even if you can secure the power, when the ambient light is very strong such as under sunlight, the notification means There was a problem that it was difficult to see the lighting.</p><p num="0010">In view of the above problems, the present invention measures weak radio waves and has very strong ambient light such as under sunlight. To propose a radio field intensity measuring device that can improve the visibility of the display unit even at times. Is the issue.</p>
<p num="0011">In order to solve the above-mentioned problems, the present invention is for supplying electric power in a radio field intensity measuring device. Provide a battery as a power source. Then, the power source for driving the radio field intensity measuring device is received. It creates from the radio waves that it trusts and charges the battery. The message obtained from the received radio wave When the potential of No. is larger than the output potential of the battery, the power is stored in the battery. Eh, the potential of the signal obtained from the received radio wave is smaller than the output potential of the battery. Occasionally, the generated power of the battery is used as a power source for driving the radio field intensity measuring device. It is characterized by that.</p><p num="0012">Further, the radio wave intensity measuring device of the present invention is a thermochromi as an element for displaying the radio wave intensity. Cook material (also called temperature indicating material) or electrochromic material (also called EC material) As a means to change the color of the chromic material, which is characterized by being used, a resistance element Alternatively, a voltage application terminal is provided.</p><p num="0013">One of the radio wave intensity measuring devices of the present invention is an antenna for converting the received radio wave into an induction signal. , A rectifier circuit that rectifies the induction signal and outputs a DC signal, and charging is performed by the DC signal. A battery, a control circuit that compares the potential of the DC signal with the output potential of the battery, and An amplifier circuit that amplifies the DC signal and the DC signal amplified by the amplifier circuit. The control circuit has a display element that operates by the above, and the potential of the DC signal is the back. When it is larger than the output potential of the terry, the battery is charged by the DC signal, and the direct current is charged. When the potential of the flow signal is smaller than the output potential of the battery, the power of the battery is increased. It is characterized in that it is used as a power source for driving an amplifier circuit.</p><p num="0014">Another radio wave intensity measuring device of the present invention is for converting the received radio wave into an induction signal. With the tender, a rectifier circuit that rectifies the induction signal and outputs a DC signal, and the DC signal. Control to compare the potential of the DC signal and the output potential of the battery with the battery to be charged The circuit, the amplifier circuit that amplifies the DC signal, and the amplifier circuit amplified by the amplifier circuit. It has a display element that operates by a DC signal, and the control circuit has a potential of the DC signal. When the output potential of the battery is larger than the output potential of the battery, the battery is charged by the DC signal. , When the potential of the DC signal is smaller than the output potential of the battery, the power of the battery The power is used as a power source for driving the amplifier circuit, and the display element is based on the amplifier circuit. The feature is that the color changes according to the magnitude of the amplified DC signal.</p><p num="0015">Another radio wave intensity measuring device of the present invention is for converting the received radio wave into an induction signal. With the tender, a rectifier circuit that rectifies the induction signal and outputs a DC signal, and the DC signal. Control to compare the potential of the DC signal and the output potential of the battery with the battery to be charged The circuit, the amplifier circuit that amplifies the DC signal, and the amplifier circuit amplified by the amplifier circuit. It has a display element that operates by a DC signal, and the control circuit has a potential of the DC signal. When the output potential of the battery is larger than the output potential of the battery, the battery is charged by the DC signal. , When the potential of the DC signal is smaller than the output potential of the battery, the power of the battery The force is used as a power source for driving the amplifier circuit, and the display element is a resistance heating element and a sir. It is characterized by being composed of a mochromic element.</p><p num="0016">Another radio wave intensity measuring device of the present invention is for converting the received radio wave into an induction signal. With the tender, a rectifier circuit that rectifies the induction signal and outputs a DC signal, and the DC signal. Control to compare the potential of the DC signal and the output potential of the battery with the battery to be charged The circuit, the amplifier circuit that amplifies the DC signal, and the amplifier circuit amplified by the amplifier circuit. It has a display element that operates by a DC signal, and the control circuit has a potential of the DC signal. When the output potential of the battery is larger than the output potential of the battery, the battery is charged by the DC signal. , When the potential of the DC signal is smaller than the output potential of the battery, the power of the battery The force is used as a power source for driving the amplifier circuit, and the display element is a resistance heating element and a sir. It is composed of mochromic elements, and the magnitude of the DC signal amplified by the amplifier circuit. It is characterized in that the color changes accordingly.</p><p num="0017">Further, the thermochromic element in the present invention includes a thermotropic liquid crystal. It is characterized by.</p><p num="0018">Another radio wave intensity measuring device of the present invention is for converting the received radio wave into an induction signal. With the tender, a rectifier circuit that rectifies the induction signal and outputs a DC signal, and the DC signal. Control to compare the potential of the DC signal and the output potential of the battery with the battery to be charged The circuit, the amplifier circuit that amplifies the DC signal, and the amplifier circuit amplified by the amplifier circuit. It has a display element that operates by a DC signal, and the control circuit has a potential of the DC signal. When the output potential of the battery is larger than the output potential of the battery, the battery is charged by the DC signal. , When the potential of the DC signal is smaller than the output potential of the battery, the power of the battery The force is used as a power source for driving the amplifier circuit, and the display element is a voltage application element and d. It is characterized by being composed of a rectrochromic element.</p><p num="0019">Another radio wave intensity measuring device of the present invention is for converting the received radio wave into an induction signal. With the tender, a rectifier circuit that rectifies the induction signal and outputs a DC signal, and the DC signal. Control to compare the potential of the DC signal and the output potential of the battery with the battery to be charged The circuit, the amplifier circuit that amplifies the DC signal, and the amplifier circuit amplified by the amplifier circuit. It has a display element that operates by a DC signal, and the control circuit has a potential of the DC signal. When the output potential of the battery is larger than the output potential of the battery, the battery is charged by the DC signal. , When the potential of the DC signal is smaller than the output potential of the battery, the power of the battery The force is used as a power source for driving the amplifier circuit, and the display element is a voltage application element and d. A DC signal composed of a rectrochromic element and amplified by the amplifier circuit. It is characterized in that the color changes according to the size of.</p><p num="0020">Further, the electrochromic device in the present invention is characterized in that it contains a metal oxide. As a symptom.</p><p num="0021">The battery in the present invention includes a lithium battery, a lithium polymer battery, and a lithium ion. Batteries, nickel-metal hydride batteries, nickel-cadmium batteries, organic radical batteries, lead-acid batteries, air secondary batteries, It is characterized by being either a nickel-zinc battery, a silver-zinc battery, or a capacitor. ..</p><p num="0022">Further, the capacitor in the present invention is characterized by being an electric double layer capacitor.</p><p num="0023">Further, the radio wave intensity detector of the present invention is provided with the above radio wave intensity measuring device and is attached to an article. It is characterized by detecting radio waves with.</p><p num="0024">Further, the amusement device of the present invention includes a plate-shaped radio wave intensity detector to which the above radio wave intensity detector is attached and a radio wave. Using a transmitter and using the radio waves transmitted by the radio wave transmitter, the color of the plate-shaped radio wave intensity detector It is characterized by changing the eyes.</p><p num="0025">In the present invention, the term "connected" means that the device is electrically connected. did Therefore, in the configuration disclosed by the present invention, in addition to the predetermined connection relationship, an electrical connection between them is performed. Other elements that enable (eg, switches, transistors, capacitive elements, inductors, resistors) Elements, diodes, etc.) may be arranged.</p>
<p num="0026">INDUSTRIAL APPLICABILITY According to the present invention, a radio wave intensity measuring device capable of measuring a weak radio wave from a long distance is provided. can do. Further, the present invention provides the present invention even when the ambient light is very strong, such as under sunlight. It is possible to provide a radio wave intensity measuring device having excellent visibility.</p>
0027<figref num="1">The figure explaining Embodiment 1 of this invention.</figref><figref num="2">The figure explaining Embodiment 1 of this invention.</figref><figref num="3">The figure explaining Embodiment 1 of this invention.</figref><figref num="4">The figure explaining Embodiment 1 of this invention.</figref><figref num="5">The figure explaining Embodiment 1 of this invention.</figref><figref num="6">The figure explaining Embodiment 1 of this invention.</figref><figref num="7">The figure explaining Embodiment 1 of this invention.</figref><figref num="8">The figure explaining Embodiment 1 of this invention.</figref><figref num="9">The figure explaining Embodiment 1 of this invention.</figref><figref num="10">The figure explaining Embodiment 1 of this invention.</figref><figref num="11">The figure explaining Embodiment 1 of this invention.</figref><figref num="12">The figure explaining Embodiment 1 of this invention.</figref><figref num="13">The figure explaining Embodiment 2 of this invention.</figref><figref num="14">The figure explaining Embodiment 2 of this invention.</figref><figref num="15">The figure explaining Embodiment 2 of this invention.</figref><figref num="16">The figure explaining Embodiment 2 of this invention.</figref><figref num="17">The figure explaining Example 1 of this invention.</figref><figref num="18">The figure explaining Example 1 of this invention.</figref><figref num="19">The figure explaining Example 1 of this invention.</figref><figref num="20">The figure explaining Example 1 of this invention.</figref><figref num="21">The figure explaining Example 1 of this invention.</figref><figref num="22">The figure explaining Example 2 of this invention.</figref><figref num="23">The figure explaining Example 2 of this invention.</figref><figref num="24">The figure explaining Example 2 of this invention.</figref><figref num="25">The figure explaining Example 3 of this invention.</figref><figref num="26">The figure explaining Example 3 of this invention.</figref><figref num="27">The figure explaining Example 3 of this invention.</figref><figref num="28">The figure explaining Example 3 of this invention.</figref><figref num="29">The figure explaining Example 4 of this invention.</figref><figref num="30">The figure explaining Example 4 of this invention.</figref><figref num="31">The figure explaining Example 4 of this invention.</figref><figref num="32">The figure explaining Example 4 of this invention.</figref><figref num="33">The figure explaining Example 4 of this invention.</figref><figref num="34">The figure explaining Example 4 of this invention.</figref><figref num="35">The figure explaining Example 4 of this invention.</figref><figref num="36">The figure explaining Example 4 of this invention.</figref><figref num="37">The figure explaining Example 5 of this invention.</figref><figref num="38">The figure explaining the subject of this invention.</figref>
0028Hereinafter, embodiments of the present invention will be described with reference to the drawings. However, the present invention is many different It is possible to carry out in the embodiment, and without departing from the gist of the present invention and its scope. It is easily understood by those skilled in the art that the form and details can be changed in various ways. Therefore, The interpretation is not limited to the description of the present embodiment. In addition, an embodiment will be described. In all the figures for, the common code indicates the same part or the part having the same function. Therefore, the description of the repetition will be omitted. (Embodiment 1)
0029In the present embodiment, the configuration of the radio wave intensity measuring device in the present invention will be described.
0030FIG. 1 shows a block diagram of the radio field intensity measuring device according to the present invention. Radio field strength measurement device Station 100 has an antenna 110, a rectifier circuit 111, a control circuit 112, a battery 113, and a. It has an amplifier circuit 114 and a display element 115. For the sake of simplicity, the rectification times The path 111, the control circuit 112, and the amplifier circuit 114 are combined to form the signal processing circuit 120. ..
0031In FIG. 2, the block in which the antenna 110 receives the received radio wave 302 from the radio wave source 301. The figure is shown. In FIG. 2, the radio wave received by the antenna 110 is converted into an induction signal and is converted into an induction signal. It is input to the rectifier circuit 111. The rectifier circuit 111 converts the induction signal into a DC signal and outputs it. .. Further, in FIG. 2, the DC signal output from the rectifier circuit 111 passes through the control circuit 112. Is input to the battery 113. In addition, a part of the DC signal in the rectifier circuit 111 is an amplifier. It is amplified on the road 114 and input to the display element 115. The display element 115 is an amplifier circuit 11 The color is changed according to the DC signal amplified in 4.
0032The rectifier circuit 111 includes a diode 503, a diode 504, and the diode 503, as shown in FIG. 4, for example. It has a capacitor 505 and a diode 503 and an induction signal received by the antenna 110. Half-wave rectification is performed by the diode 504 and smoothed by the capacitor 505. Soshi The half-wave rectified and smoothed DC signal output from the rectifier circuit 111 is the control circuit 11 Supplied to 2.
0033The control circuit 112 includes a diode 604, a diode 605, and electricity, as shown in FIG. 5, for example. It has a pressure comparison circuit 601, a switch 602, and a switch 603.
0034The voltage comparison circuit 601 is a direct output from the output potential of the battery 113 and the rectifier circuit 111. Compare with the potential of the flow signal. The potential of the DC signal output from the rectifier circuit 111 is the battery When sufficiently higher than the output potential of 113, the voltage comparison circuit 601 switches switch 602. And turn off switch 603. Then, from the rectifier circuit 111 to the diode 604 Current flows through the battery 113 via switch 602. On the other hand, it comes out of the rectifier circuit 111. The potential of the applied DC signal is not high enough compared to the output potential of the battery 113. Then, the voltage comparison circuit 601 turns off the switch 602 and turns on the switch 603. This At this time, the potential of the DC signal output from the rectifier circuit 111 is the output potential of the battery 113. If it is higher, no current will flow through the diode 605, but it will be directly output from the rectifier circuit 111. If the potential of the flow signal is lower than the output potential of the battery 113, switch from the battery 113. A current flows through the amplifier circuit 114 via the 603 and the diode 605.
0035The control circuit is not limited to this embodiment, and other types may be used.
0036The switch described in the present specification is a transistor (for example, a bipolar transistor, MOS transistors, diodes (eg, PN diodes, PIN diodes, etc.) Schottky diode, MIM (Metal Insulator Metal) die Aude, MIS (Metal Insulator Semiconductor) die Aethers, diode-connected transistors, etc.), thyristors, etc. can be used. Alternatively, a logic circuit combining these can be used as a switch.
0037An example of the voltage comparison circuit 601 is shown in FIG.
0038The voltage comparison circuit 601 uses the voltage output from the battery 113 as a resistor 701 and a resistor 702. The voltage is divided by resistance and the voltage output from the rectifier circuit 111 is divided by resistance 703 and resistance 704. Then, the voltage divided by resistance is input to the comparator 705. Comparator Inverter type buffer 706 and buffer 707 are connected in series to the output of 705. .. Then, the output of buffer 706 is input to the control terminal of switch 603, and buffer 707 Is input to the control terminal of switch 602, and switch 602 and switch 603 in FIG. Controls on / off. The switch 602 and switch 603 are input to the control terminals. It is assumed that the signal is turned on when the signal is H level and turned off when the signal is L level.
0039In addition, by dividing the resistor and adjusting the voltage input to the comparator 705, the battery is backed up. How much higher the voltage output from the rectifier circuit is than the voltage output from Terry 113 You can control whether switch 602 is turned on and switch 603 is turned off. .. Similarly, which is the voltage output from the rectifier circuit rather than the voltage output from the battery 113? When it gets too low, control whether switch 602 is turned off and switch 603 is turned on. be able to.
0040The voltage comparison circuit is not limited to this embodiment, and other types may be used.
0041Next, the operation of the voltage comparison circuit will be described using the timing chart shown in FIG. First wave Form 1001 shows the potential of the resistance after being divided by the resistors 701 and 702 in FIG. It's a change. The second waveform 1002 is resisted by resistors 703 and 704 in Figure 6. It is a change in potential after being divided. In FIG. 6, the first signal 1010 is a comparator. This is a control signal output by 705 and input to buffer 706. The second signal 1011 is In FIG. 6, the control signal output by the buffer 706 and input to the control terminal of the switch 603. Is. The third signal 1012 is output by buffer 707 in FIG. 6 and is switched to switch 602. It is a control signal input to the control terminal of. For ease of explanation, the antenna 11 The signal before rectification input from 0 to the rectifier circuit 111 is the waveform before rectification 1020 (waveform of the induction signal). ).
0042In FIG. 9, when the potential of the first waveform 1001 is higher than the potential of the second waveform 1002. That is, when the amplitude of the pre-rectification waveform 1020, which is the pre-rectification signal, is large, the first signal 101 0 is the high potential level (hereinafter abbreviated as H), and the second signal 1011 is the low potential level (hereinafter, abbreviated as H). (Abbreviated as L), the third signal 1012 is H. Therefore, the L of the second signal 1011 is input. Powered switch 603 is off, switch 602 to which H of the third signal 1012 is input Is turned on, so the battery 113 is charged as shown in FIG. Charge the above period The period is 1030, and the amplifier circuit 114 is the power output from the rectifier circuit 111 during this period. To use.
0043In FIG. 9, when the potential of the first waveform 1001 is lower than the potential of the second waveform 1002. That is, when the amplitude of the pre-rectification waveform 1020, which is the pre-rectification signal, is small, the first signal 101 0 is L, the second signal 1011 is H, and the third signal 1012 is L. Therefore, the second signal Switch 603, which was input with H of 1011, was turned on, and L of the third signal, 1012, was input. Since the switch 602 is turned off, the battery 113 is discharged as shown in FIG. To. The period is defined as the discharge period 1031. During this period, the amplifier circuit 114 is battery 1 Use the power output from 13.
0044Therefore, the amplifier circuit 114 has either a charging period of 1030 or a discharging period of 1031. , Can be supplied with electricity.
0045Battery 113 includes lithium-ion battery, lithium secondary battery, nickel-metal hydride battery, and Nika. Secondary batteries such as batteries and organic radical batteries can be used, but the present invention is not limited to this. Further, a large-capacity capacitor or the like may be used.
0046Charging means that current flows through the battery 113, and power is stored in the battery 113. It is to be piled up. Specifically speaking with a secondary battery, charging is input to the battery 113. It means converting the generated electrical energy into chemical energy and storing it. On the other hand, what is discharge? By converting the chemical energy in the terry 113 into electrical energy and releasing electric power. To.
0047As a large-capacity capacitor that can be used as the battery 113 of the present invention. Therefore, it is desirable that the facing area of the electrodes is large. Activated carbon, fullerenes, carbs Use an electric double layer capacitor that uses a material for electrodes with a large specific surface area such as nanotubes. Is preferable. Capacitors have a simpler structure than batteries and are easy to thin and stack. Is. The electric double layer capacitor has a power storage function, and its deterioration is small even if the number of times of charging and discharging increases. It is also suitable because it has excellent quick charging characteristics.
0048The display element 115 is provided with chromos such as a thermochromic material and an electrochromic material. Devices containing materials that exhibit the phenomenon can be used, but are not limited to this.
0049Next, the operation of the radio field intensity measuring device will be described using the timing chart shown in FIG. No. The waveform 1201 of 1 is rectified by the rectifier circuit 111 in FIG. 2, and the amplifier circuit 114 It is a change in the potential of the DC signal input to. The second waveform 1202 is the control circuit in FIG. It is a change in the potential of the signal output from 112 and input to the amplifier circuit 114 as a power supply. .. The second waveform 1202 is the same as the second waveform 1002 in FIG. Third Waveform 1203 unanswers the first waveform 1201 input to the amplifier circuit 114 in FIG. This is a change in the potential of the voltage that is amplified and output by the circuit 114 and input to the display element 115. Na Oh, for ease of explanation, before rectification input from the antenna 110 to the rectifier circuit 111 The signal is shown as the pre-rectified waveform 1220 (induction signal waveform). Also, the waveform before rectification 1220 A small period is a weak radio period 1221, and a period with a large pre-rectification waveform 1220 is a strong radio period 122. It is set to 2, and the minimum operating voltage of the display element 115 is shown as 1223. What is the minimum operating voltage? , The minimum voltage at which the display element 115 causes a change in color to the extent that the human eye can see it. ..
0050In FIG. 12, when the weak radio wave period is 1221, the first waveform 1201 is the third waveform 1203. It is amplified like. Similarly, when the strong radio wave period 1222, the first waveform 1201 is the first. It is amplified like the waveform 1203 of 3. At this time, from the first waveform 1201 to the third waveform Increase rate (V)<sub>2</sub>/ V<sub>1</sub>) Is called the amplification factor. The amplifier circuit 114 is the third wave after amplification. The shape may have an amplification factor exceeding the minimum operating voltage of 1223.
0051Therefore, the display element 115 has either a weak radio wave period 1221 or a strong radio wave period 1222. Can also work.
0052Next, a schematic diagram of the radio field intensity measuring device of the present invention is shown in FIG. 7 (a).
0053The radio field intensity measuring device shown in FIG. 7 (a) has an antenna 810 and a signal processing circuit on a substrate 801. It has 811, a battery 812, and a display element 813. Antenna 810 is the connection end It has a child 820 and a connection terminal 821. The antenna 810 is connected to the connection terminal 820. Each of the terminals 821 is connected to the signal processing circuit 811.
0054Transistors included in the signal processing circuit 811 are applied with various types of transistors. Can be done. Therefore, there is no limitation on the types of transistors that can be applied. Therefore, amorphous Thin film transistor using non-single crystal semiconductor film represented by quality silicon and polycrystalline silicon ( TFT), transistors formed using semiconductor substrates and SOI substrates, MOS type transitions Stars, junction transistors, bipolar transistors, ZnO, a-InGaZnO, etc. Transistors using compound semiconductors, tigers using organic semiconductors and carbon nanotubes An engineer and other transistors can be applied. For non-single crystal semiconductor films It may contain hydrogen or halogen.
0055Various types of the substrate 801 can be used, and the type is not limited to a specific one. I. Therefore, for example, a single crystal substrate, an SOI substrate, a glass substrate, a quartz substrate, or a plastic substrate. , Paper substrate, cellophane substrate, stone substrate, etc. Also, trust in a certain board No. processing circuit 811 is formed, and then the signal processing circuit 811 is moved to another board to another. It may be arranged on the substrate.
0056The shape of the antenna 810 is not particularly limited. For example, as shown in Fig. 3 (a), the substrate One side of the antenna 403 may be arranged around the signal processing circuit 402 on the 401. Also, As shown in Fig. 3 (b), a thin antenna 403 is arranged around the signal processing circuit 402 on the board 401. You may place it. Also, as shown in Fig. 3 (c), take a shape for receiving high-frequency electromagnetic waves. May be good. Further, as shown in FIG. 3 (d), a 180-degree omnidirectional shape may be taken. Also, Figure 3 It may take a long rod-shaped shape as in (e). Also, for example, the so-called die Pole antenna, loop antenna, Yagi antenna, patch antenna or micro antenna, etc. It may take the shape of.
0057In Fig. 3, for the sake of simplicity, the batteries and display elements are not included. Although not described, the radio field intensity measuring device according to the first embodiment of the present invention includes a battery and a table. An indicator element is provided.
0058The antenna 810 shown in FIG. 7A is formed on the substrate on which the signal processing circuit 811 is formed. It may be formed on a substrate different from the substrate on which the signal processing circuit 811 is formed. .. Various types of substrates can be used to form the antenna 810. It is not limited to a fixed one. Therefore, for example, a single crystal substrate, an SOI substrate, or a glass substrate. , Quartz substrate, plastic substrate, paper substrate, cellophane substrate, stone substrate, etc. Can be done. Then, the antenna 810 is placed on the same board as the board on which the signal processing circuit 811 is formed. When forming, it is derived by sputtering method, CVD method, spin coating method, etc. An electric film may be formed and a conductive film may be patterned to form an antenna 810, or an ink film may be formed. Antenna 810 is formed by a droplet ejection method represented by the et method or a screen printing method. You may. The antenna 810 is formed on a board different from the board on which the signal processing circuit 811 is formed. In this case, the antenna 810 can be formed by the method described above, but preferably. In particular, the antenna 810 may be formed by a screen printing method.
0059The connection method between the board on which the signal processing circuit is formed and the antenna is limited to a specific one. I can't. For example, wire bonding connection between the antenna and the board on which the signal processing circuit is formed One side of the board on which a signal processing circuit connected using bump connection or chipped is formed. May be used as an electrode and attached to the antenna. In this method, the board and the panel ACF (Anisotropic Conductive Film) It can be attached using a sex film).
0060Also, the length required for the antenna depends on the frequency used for reception. For example, the frequency is 2. In the case of 45GHz, if a half-wave dipole antenna is installed, it is about 60mm (1/2 wavelength), If a monopole antenna is installed, the length should be about 30 mm (1/4 wavelength).
0061The antenna may have means for changing the frequency of the received signal. For example, Anne When the tena shape is a loop antenna, as shown in FIG. 8, the ante that constitutes the antenna 110 A resonance circuit may be formed by the nacoil 901 and the capacitor 902.
0062Further, in FIG. 7A, the antenna 810 is stacked on the same board together with the signal processing circuit 811. Although it is configured to be provided in layers, it may be provided as an external antenna. .. As shown in FIG. 7A, the antenna 810 is mounted on the same board 8 together with the signal processing circuit 811. When the antenna is laminated on 01, the antenna shape is preferably a micro loop antenna or It is preferable to use an antenna having a shape such as a minute dipole antenna.
0063Battery 812 includes lithium-ion battery, lithium secondary battery, nickel-metal hydride battery, and d. Kado batteries, organic radical batteries, lead-acid batteries, secondary air batteries, nickel-zinc batteries, silver-zinc batteries Secondary batteries such as, but are not limited to this. Also a large capacity capacitor Etc. may be applied. In particular, lithium-ion batteries and lithium secondary batteries have large charge / discharge capacities. Therefore, it is applied to the battery provided in the radio field intensity measuring device according to the first embodiment of the present invention. By doing so, it is possible to reduce the size. In addition, the active materials and electrolytes of lithium-ion batteries are used. The signal processing circuit 811 forms the battery 812 by forming it by the putting method. It may be formed on the formed substrate, or it may be formed on the substrate on which the antenna 810 is formed. You may. Battery 812 on the board on which the signal processing circuit 811 and antenna 810 are formed Yield is improved by forming. Metallic lithium battery is a positive electrode active material Mion-containing transition metal oxides, metal oxides, metal sulfides, iron compounds, conductive polymers Or use organic sulfur compounds, lithium (alloy) as the negative electrode active material, and organic electricity as the electrolyte. Battery with larger charge / discharge capacity by using liquid solution or polymer electrolyte 81 Can be 2.
0064The display element 813 has chromos such as thermochromic material and electrochromic material. Devices containing materials that exhibit the phenomenon can be used, but are not limited to this. Especially sir As an element containing a mochromic material (also called a thermochromic element), a thermotropy is used. Liquid crystal (also called thermochromic liquid crystal), especially those containing cholesteric liquid crystal are preferable. Furthermore, the cholesteric liquid crystal is cholesteryl oleyl carbonate, cholesteryl. It may contain nonanoate and cholesterylbenzoate. In addition, the electric As an element containing a trochromic material (also referred to as an electrochromic element), an oxide device is used. It may contain metal oxides such as gusten and related compounds.
0065The configuration of the radio field intensity measuring device according to the first embodiment of the present invention is shown in FIG. 7 (a). Not limited to things. For example, Figure 7 (b) shows the antenna 810 and the battery 812. The configuration shows a configuration in which a signal processing circuit 811 is arranged between them, but the antenna 810 and the signal processing are shown. The battery 812 may be placed between the physical circuit 811 and the battery 812. The antenna 810 may be arranged between the signal processing circuit 811 and the antenna 810. Also, antenna 8 The area ratio of 10 to the battery 812 and the signal processing circuit 811 is not limited to the example shown in Fig. 7. Absent. That is, the radio field intensity measuring device according to the embodiment of the present invention is viewed from the cross section in layers. In addition, the positional relationship between the antenna 810, the battery 812, and the signal processing circuit 811 is not limited. I. In addition, the antenna 810 and the signal processing circuit 811 are formed on different boards. Alternatively, the antenna 810, signal processing circuit 811 and battery 812 are shaped on the same board. It may be made. The display element 813 is placed on the uppermost layer to improve visibility. It is preferable to take a large area.
0066According to the radio field intensity measuring device according to the first embodiment of the present invention, a battery for storing electric power is used. Since it has, it is not necessary to replace the battery. Also, even if the received signal is weak, the battery Since power can be supplied to the signal processing circuit from, the radio wave intensity measuring device is operated to generate radio waves. The strength can be measured. In other words, it is possible to measure the signal strength even with a weak signal. , The sensitivity of the radio field intensity measuring device can be improved, and stable measurement can be performed.
0067Also, if the received signal is strong, power can be automatically stored in the battery, so use it. Charging can be performed without the user intentionally performing the charging operation. Of course, the battery If the electric power stored in the device becomes small, the user can easily charge the battery intentionally. (Embodiment 2)
0068In the present embodiment, the embodiment of forming a display element containing a thermochromic material explain.
0069FIG. 13 shows a schematic diagram of the display element in the present invention. The display element 2500 is light-shielded. Resistor heating element 2502, thermochromic material 2503, transparent board 250 on board 2501 4, equipped with connection terminal 2510 and connection terminal 2511. Connection terminal 2510 or connection end One of the child 2511 is connected to the power supply terminal. For example, a It is connected to the pump circuit 114. Of the connection terminal 2510 or connection terminal 2511 The one that is not connected to the power supply terminal is connected to the GND terminal.
0070The configuration of the display element according to the second embodiment of the present invention is limited to that shown in FIG. Absent. For example, Figure 13 shows the thermochromic material 2503 on top of the resistance heating element 2502. Is placed, but the resistance heating element 2502 is placed on top of the thermochromic material 2503. It may have been. Also, the shape of the resistance heating element 2502 and the thermochromic material 2503 The area is not limited to that shown in FIG. For example, you can take a comb-shaped or uneven shape. I. The resistance heating element 2502 and the thermochromic material 2503 enhance the heat transfer efficiency. Therefore, it is preferable to make contact with a larger area.
0071In the present embodiment, the resistance heating element refers to all elements that generate heat by electric power. Connecting terminal The amount of heat generated is changed according to the amount of electric power supplied to the resistance heating element. In addition, in this embodiment Various substances can be applied as the material of the resistance heating element. Therefore applicable resistance heating element There is no limit to the types of materials used in.
0072In the present embodiment, the thermochromic material is a substance that exhibits a thermochromism phenomenon in general. Point to. The thermochromism phenomenon is a phenomenon in which the color of the material is reversibly changed by a thermal stimulus. That is. Therefore, the color changes depending on the amount of heat supplied from the resistance heating element 2502. To. That is, the color changes according to the amount of electric power supplied to the display element via the connection terminal. Na Oh, various substances are used as the thermochromic material contained in the display element in this embodiment. Can be applied. Therefore, there is no limitation on the types of thermochromic materials that can be applied.
0073The cholesteric liquid crystal, which is an example of the thermochromic material according to the present embodiment, depends on the temperature. It has the characteristic of changing the degree of twist of the spiral. Cholesteric LCD is Cholesteri The molecular structure that makes up the liquid crystal and the cholesteric liquid crystal change color due to changes in the molecular structure. The principle of making the mixture will be described with reference to FIGS. 14 and 15.
0074The cholesteric liquid crystal is one of the carbonate groups 2100, for example, as shown in FIG. 14 (a). Cholesteryl group 2101 is bonded to the oleyl group 2 which is a linear hydrocarbon group on the other side. It preferably contains cholesteryl oleyl carbonate to which a molecule having 102 is attached. .. In FIG. 14 (a), cholesteryl group 2101, carbonate group 2100 and oleyl are shown. Cholesteryl oleyl carbonate, a compound to which group 2102 is attached, was shown, but cal. The benzoacee shown in FIG. 14 (b) instead of the bonate group 2100 and the oleyl group 2102. Cholesteryl benzoae, which is a compound in which the group 2103 is bonded to the cholesteryl group 2101. And instead of the carbonate group 2100 and the oleyl group 2102, they are shown in Figure 14 (c). Cholesteryl, a compound in which the nonanoate group 2104 is attached to the cholesteryl group 2101 It may be nonanoate. Cholesteryl oleyl carbonate, Cholesteryl nonanoate , And liquid crystal molecules composed of different linear hydrocarbon groups of cholesteryl benzoate. By changing the mixing ratio, the color of the cholesteric liquid crystal can be changed.
0075Cholesteric liquid crystals have a spiral molecular structure and reflect part of the incident light. Has characteristics. This reflection characteristic changes depending on the degree of twist of the spiral. For example, period P The cholesteric liquid crystal molecule with λ = n (choleste) in the wavelength contained in the incident light. Only the wavelength corresponding to the refractive index of the lick liquid crystal molecule) × P is selectively reflected. For example, Figure 15 The liquid crystal molecule 2002 of (a) is located between the translucent electrode 2000 and the light-shielding substrate 2001 at a distance d. , Since it has a twist corresponding to 1/4 period, λ = n × P of the wavelength included in the incident light 2003 Selectively reflects only the wavelength corresponding to = n × 4d. In addition, the liquid crystal molecule 200 in FIG. 15 (b) 2 has a twist corresponding to 3/4 period between distances d, so it is included in the incident light 2003. It selectively reflects only the wavelength corresponding to λ = n × P = n × 4 / 3d.
0076The human eye recognizes the difference in wavelength of light as the difference in color. Therefore, in Fig. 15 (a) The reflected light 2004 and the reflected light 2004 in Fig. 15 (b) are recognized as different colors because they have different wavelengths. Be understood.
0077The transparent substrate 2000 in FIG. 15 may be a substrate that can be seen transparently by the human eye. all It is more preferable if the substrate transmits the wavelength of. The light-shielding substrate in FIG. 15 is black with the human eye. Any substrate that looks like a color may be used. A substrate that absorbs all wavelengths is more preferable.
0078FIG. 16 shows a cross-sectional view of a thermochromic element, which is a display element containing a thermochromic material. Shown. Wiring 2203a and wiring 2203b are placed on the light-shielding board 2201 via the base layer 2202. It is provided. Wiring 2203a and Wiring 2203b are separated from the interlayer insulating film 2204, respectively. Resistance at contact opening 2206 and contact opening 2207 opened in limbus 2205 It is connected to the heating element 2229. The resistance heating element 2229 and the contact opening 2206 Heat generated by the current flowing between the contact openings 2207, thermochromic material 22 Heat 11 Wiring 2203a and wiring 2203b are the connection ends in FIG. 13, respectively. Connected to a child.
0079Further, the transparent substrate 2214 is arranged so as to face the light-shielding substrate 2201. Shading board 22 A thermochromic material 2211 is provided between 01 and the transparent substrate 2214. The distance between the light-shielding substrate 2201 and the transparent substrate 2214 is maintained by the spacer 2210. ing. Thermochromic material 2211 is installed between the light-shielding board 2201 and the transparent board 2214. After being kicked, the light-shielding board 2201 and the transparent board 2214 are fixed by the sealing material 2220. Will be done. The narrower the distance between the light-shielding substrate 2201 and the transparent substrate 2214, the better the injection. Thermochromic material 2211 is a small amount and is heated. This is preferable because the heat capacity of 2211 is reduced and the color can be changed quickly.
0080Such a display element is made of a thermochromic material by applying a voltage to the resistance heating element 2229. The state of the thermochromic material 2212 changes as the amount of heat supplied to the 2211 changes. The color of the reflected light 2231 changes with respect to the incident light 2230.
<p num="0081">In this embodiment, the figure relates to an example of a method for manufacturing the radio field intensity measuring device shown in the above embodiment. This will be described with reference to the surface. In this embodiment, the antenna and the signal in the radio field intensity measuring device A configuration in which a processing circuit is provided on the same substrate using a thin film transistor will be described. In addition, it should be noted. By forming an antenna and a signal processing circuit on the board at once, it was possible to reduce the size. Therefore, it is suitable. A thin-film secondary battery was used as the battery in the signal processing circuit. An example will be described. Of course, in addition to secondary batteries, capacitors such as electric double layer capacitors It is also possible to use the configuration provided by.</p><p num="0082">First, a release layer 1303 is formed on one surface of the substrate 1301 via an insulating film 1302, followed by Insulating film 1304 and semiconductor film 1305 (for example, a film containing amorphous silicon) that functions as a base film. ) Are laminated (see Fig. 17 (A)). The insulating film 1302, the release layer 1303, The insulating film 1304 and the semiconductor film 1305 can be formed continuously.</p><p num="0083">The substrate 1301 is a glass substrate, a quartz substrate, a metal substrate (for example, a ceramic substrate or a stainless steel substrate). It is selected from semiconductor substrates such as (less substrates, etc.) and Si substrates. Other plus As a tic substrate, polyethylene terephthalate (PET), polyethylene naphthalate You can also choose substrates such as (PEN), polyether sulfone (PES), and acrylic. it can. In this step, the release layer 1303 is attached to the substrate 1301 via the insulating film 1302. Although it is provided on the entire surface, if necessary, after providing a release layer on the entire surface of the substrate 1301, a photo is provided. It may be selectively provided by a lithography method.</p><p num="0084">The insulating film 1302 and the insulating film 1304 are oxidized by using a CVD method, a sputtering method, or the like. Con, silicon nitride, silicon oxide nitride (SiOxNy) (x> y> 0), silicon nitride It is formed using an insulating material such as con (SiNxOy) (x> y> 0). For example, insulating film 1 When 302 and 1304 have a two-layer structure, a silicon nitride film is used as the first insulating film. It is preferable to form the silicon oxide film as the insulating film of the second layer. Also, the first layer A silicon nitride film is formed as the insulating film of the above, and a silicon oxide film is formed as the insulating film of the second layer. You may. The insulating film 1302 is formed from the substrate 1301 on or on the release layer 1303. The insulating film 1304 functions as a blocking layer to prevent impurities from being mixed into the element. Impurity elements are mixed into the elements formed on the substrate 1301 and the release layer 1303. Acts as a blocking layer to prevent. In this way, an insulating film that functions as a blocking layer Alkali metals such as Na from substrate 1301 by forming 1302, 1304 And alkaline earth metals, and impurity elements contained in the release layer are formed on the release layer 1303. It is possible to prevent the element from being adversely affected. In addition, quartz is used as the substrate 1301. In such cases, the insulating films 1302 and 1304 may be omitted.</p><p num="0085">As the release layer 1303, a metal film or a laminated structure of a metal film and a metal oxide film can be used. Money Tungsten (W), molybdenum (Mo), titanium (Ti), tantalum ( Ta), niobium (Nb), nickel (Ni), cobalt (Co), zirconium (Zr) , Zinc (Zn), Ruthenium (Ru), Rhodium (Rh), Palladium (Pd), Osumi Element or element-based alloy material selected from um (Os) and iridium (Ir) A film made of a material or compound material is formed as a single layer or laminated. Also, these materials are It can be formed by using various CVD methods such as a sputtering method and a plasma CVD method. metal As the laminated structure of the film and the metal oxide film, after forming the above-mentioned metal film, under an oxygen atmosphere or Is N<sub>2</sub>Plasma treatment in O atmosphere, or in oxygen atmosphere or N<sub>2</sub>Under the atmosphere By performing heat treatment in the metal film, the oxide or oxide nitride of the metal film is exposed to the surface of the metal film. Can be provided. For example, as a metal film, tongue steer by sputtering method, CVD method, etc. When a tungsten film is provided, the tungsten film is subjected to plasma treatment to form a tungsten film. A metal oxide film made of tungsten oxide can be formed on the surface. Also, in this case , Tungsten oxide is represented by WOx, where X is 2-3 and X is 2 (WO)<sub>2</sub>), When X is 2.5 (W<sub>2</sub>O<sub>5</sub>), When X is 2.75 (W<sub>4</sub>O<sub>11</sub>), When X is 3 (WO<sub>3</sub>)and so on. The value of X listed above in forming the oxide of tungsten There are no particular restrictions on this, and it is advisable to decide which oxide to form based on the etching rate, etc. .. In addition, for example, after forming a metal film (for example, tungsten), a metal film is formed on the metal film. Silicon oxide (SiO) by the putter method<sub>2</sub>), Etc., and a metal oxide (eg,) on the metal film. For example, tungsten oxide) may be formed on tungsten. Also with plasma processing Then, for example, the above-mentioned high-density plasma treatment may be performed. In addition to the metal oxide film, Metal nitrides and metal oxide nitrides may be used. In this case, the metal film is in a nitrogen atmosphere or nitrogen. Plasma treatment or heat treatment may be performed in a raw and oxygen atmosphere.</p><p num="0086">The amorphous semiconductor film 1305 is prepared by a sputtering method, an LPCVD method, a plasma CVD method, etc. Therefore, it is formed with a thickness of 25 to 200 nm (preferably 30 to 150 nm).</p><p num="0087">Next, the amorphous semiconductor film 1305 is irradiated with laser light to crystallize it. Laser light Irradiation, thermal crystallization method using RTA or Furnace anneal furnace, metal that promotes crystallization Crystallization of amorphous semiconductor film 1305 by a method combined with a thermal crystallization method using elements, etc. May be done. Then, the obtained crystalline semiconductor film is etched into a desired shape to form a crystal. Quality Semiconductor films 1305a to 1305f are formed and cover the semiconductor films 1305a to 1305f. The gate insulating film 1306 is formed in this way (see FIG. 17 (B)).</p><p num="0088">The gate insulating film 1306 is made of silicon oxide and nitriding by using a CVD method, a sputtering method, or the like. Silicon, Silicon Oxidation (SiOxNy) (x> y> 0), Silicon Nitride (Si) It is formed using an insulating material such as NxOy) (x> y> 0). For example, gate insulating film 130 When 6 has a two-layer structure, a silicon oxide nitride film is formed as the first insulating film, and the second layer is formed. A silicon nitride film may be formed as an insulating film for the eyes. Also, as the first layer insulating film A silicon oxide film may be formed, and a silicon nitride film may be formed as a second insulating film.</p><p num="0089">An example of the manufacturing process of the crystalline semiconductor films 1305a to 1305f will be briefly described below. Instead, a plasma CVD method is used to form an amorphous semiconductor film with a film thickness of 50 to 60 nm. next , A solution containing nickel, which is a metal element that promotes crystallization, was retained on the amorphous semiconductor film. After that, the amorphous semiconductor film is dehydrogenated (500 ° C, 1 hour) and thermally crystallized (550). ° C, 4 hours) to form a crystalline semiconductor film. After that, irradiate the laser light and take a photo. Crystalline semiconductor films 1305a to 1305f are formed by using a lithography method. In addition, without performing thermal crystallization using metal elements that promote crystallization, only laser light irradiation is required. Crystallization of the amorphous semiconductor film may be performed.</p><p num="0090">As a laser oscillator used for crystallization, a continuous oscillation type laser beam (CW laser beam) And a pulse oscillation type laser beam (pulse laser beam) can be used. .. The laser beams that can be used here are Ar laser, Kr laser, excimer. Gas lasers such as lasers, single crystal YAG, YVO<sub>4</sub>, Forsterite (Mg<sub>2</sub>S iO<sub>4</sub>), YAlO<sub>3</sub>, GdVO<sub>4</sub>Or polycrystalline (ceramic) YAG, Y<sub>2</sub>O<sub>3</sub>, YVO<sub>4</sub>, YAlO<sub>3</sub>, GdVO<sub>4</sub>In addition, Nd, Yb, Cr, Ti, H as dopants Laser using one or more of o, Er, Tm, and Ta as a medium , Glass laser, ruby laser, alexandrite laser, Ti: sapphire Oscillated from one or more of the laser, copper vapor laser or gold vapor laser Can be used. The fundamental waves of such laser beams, and the first of these fundamental waves By irradiating a laser beam from the 2nd harmonic to the 4th harmonic, it is possible to obtain crystals with a large particle size. it can. For example, Nd: YVO<sub>4</sub>Second harmonic of laser (primary wave 1064 nm) (532) nm) and the third harmonic (355 nm) can be used. At this time, the power of the laser is dense Degree is 0.01 ~ 100MW / cm<sup>2</sup>Degree (preferably 0.1-10 MW / cm<sup>2</sup>)Is necessary Is. Then, irradiation is performed with a scanning speed of about 10 to 2000 cm / sec. In addition, simply Crystal YAG, YVO<sub>4</sub>, Forsterite (Mg<sub>2</sub>SiO<sub>4</sub>), YAlO<sub>3</sub>, GdVO<sub>4</sub>Or polycrystalline (ceramic) YAG, Y<sub>2</sub>O<sub>3</sub>, YVO<sub>4</sub>, YAlO<sub>3</sub>, GdV O<sub>4</sub>In addition, one of Nd, Yb, Cr, Ti, Ho, Er, Tm, and Ta as a dopant Or a laser, Ar ion laser, or T that uses multiple types of laser as a medium. i: Sapphire laser can oscillate continuously, Q-switch operation and motion It is also possible to oscillate a pulse at an oscillation frequency of 10 MHz or higher by performing synchronization. It is possible. When a laser beam is oscillated at an oscillation frequency of 10 MHz or higher, the semiconductor film becomes The next pulse is applied to the semiconductor film between the time it is melted by the laser and the time it is solidified. .. Therefore, unlike the case of using a pulse laser having a low oscillation frequency, in the semiconductor film Since the solid-liquid interface can be moved continuously, it grows continuously in the scanning direction. Crystal grains can be obtained.</p><p num="0091">Further, the gate insulating film 1306 has the above-mentioned high-density film with respect to the semiconductor films 1305a to 1305f. It may be formed by performing a razor treatment and oxidizing or nitriding the surface. For example, He, Ar , Kr, Xe and other noble gases, oxygen, nitric oxide (NO)<sub>2</sub>), Ammonia, nitrogen, hydrogen, etc. It is formed by plasma treatment in which the mixed gas of the above is introduced. The excitation of the plasma in this case is micro By introducing waves, it is possible to generate high-density plasma at low electron temperatures. This high Oxygen radicals (which may contain OH radicals) and nitrogen radicals generated by density plasma Oxidizing or nitriding the surface of a semiconductor film with an element (which may contain NH radicals). Can be done.</p><p num="0092">By processing using such high-density plasma, 1 to 20 nm, typically 5 to 10 nm The insulating film is formed on the semiconductor film. Since the reaction in this case is a solid-phase reaction, the insulating film is concerned. The interface state density between the semiconductor film and the semiconductor film can be extremely low. Such a high density plastic Zuma treatment directly oxidizes (or crystallizes) a semiconductor film (crystalline silicon or polycrystalline silicon). Due to nitriding), the thickness of the insulating film formed is ideally very variable. be able to. In addition, oxidation is not strengthened even at the grain boundaries of crystalline silicon. , It will be in a very favorable state. That is, the surface of the semiconductor film by the high-density plasma treatment shown here. By solid-phase oxidation of the surface, it is uniform without causing an abnormal oxidation reaction at the grain boundaries. An insulating film having good properties and a low interface state density can be formed.</p><p num="0093">As the gate insulating film, only the insulating film formed by the high-density plasma treatment may be used, or the gate insulating film may be used. In addition, silicon oxide, silicon nitriding, and silicon nitride are used by the CVD method using plasma and thermal reaction. An insulating film such as a condenser may be deposited and laminated. In any case, formed by high-density plasma A transistor formed by including a part or all of the gate insulating film is characterized by its characteristics. The flicker can be reduced.</p><p num="0094">In addition, a continuously oscillating laser or a laser that oscillates at a frequency of 10 MHz or higher with respect to the semiconductor film. Semiconductor film 1305a obtained by scanning in one direction and crystallizing while irradiating a laser beam. ~ 1305f has the characteristic that crystals grow in the scanning direction of the beam. The scanning direction According to the channel length direction (the direction in which carriers flow when the channel formation region is formed) By arranging transistors and combining the above gate insulating layer, characteristic variation is small. Moreover, a thin film transistor (TFT) having high field effect mobility can be obtained.</p><p num="0095">Next, the first conductive film and the second conductive film are laminated and formed on the gate insulating film 1306. Here, the first conductive film is 20 to 100 nm by the CVD method, sputtering method, etc. Form by thickness. The second conductive film is formed with a thickness of 100 to 400 nm. First conductive film And the second conductive film is tantalum (Ta), tungsten (W), titanium (Ti), molybdenum. (Mo), aluminum (Al), copper (Cu), chromium (Cr), niobium (Nb), etc. Formed from the elements selected from the above, or alloy materials or compound materials containing these elements as the main components. To. Alternatively, for semiconductor materials typified by polycrystalline silicon doped with impurity elements such as phosphorus. Form more. To give an example of the combination of the first conductive film and the second conductive film, tantalum nitride Membrane and Tungsten Membrane, Tungsten Nitride Membrane and Tungsten Membrane, Molybdenum Nitride Membrane and Molybdenum Examples include a den film. Tungsten and tantalum nitride have high heat resistance, so they are the first conductive material. After forming the film and the second conductive film, heat treatment for the purpose of thermal activation can be performed. Also, in the case of a three-layer structure instead of a two-layer structure, a molybdenum film, an aluminum film, and a molybdenum film are used. It is advisable to adopt a laminated structure of membranes.</p><p num="0096">Next, a mask consisting of a resist is formed using a photolithography method, and a gate electrode and a gear are formed. Etching to form a wire is performed on the semiconductor films 1305a to 1305f. A gate electrode 1307 is formed on the side. Here, as the gate electrode 1307, the first conductivity An example is shown in which the film 1307a and the second conductive film 1307b are provided in a laminated structure.</p><p num="0097">Next, using the gate electrode 1307 as a mask, the semiconductor films 1305a to 1305f are ionized. Impurity elements that impart n-type are added to a low concentration by the pump method or ion implantation method, and then , A mask made of resist is selectively formed by the photolithography method to give a p-type. Impurity elements to be added are added in high concentration. Impurity elements showing n-type include phosphorus (P) and arsenic. (As) etc. can be used. Impurity elements showing p-type include boron (B) and al. Minium (Al), gallium (Ga) and the like can be used. Here, n type is given Phosphorus (P) is used as an impurity element, and 1 × 10<sup>15</sup>~1×10<sup>19</sup>/cm<sup>3</sup>Including at the concentration of Impurity region showing n-type is selectively introduced into semiconductor films 1305a to 1305f so as to be rare. Form 1308. In addition, boron (B) is used as an impurity element that imparts p-type, and 1 × Ten<sup>19</sup>~1×10<sup>20</sup>/cm<sup>3</sup>Semiconductor film 1305c, selectively to be contained at the concentration of Introduced into 1305e to form an impurity region 1309 showing p-type (see FIG. 17 (C)).</p><p num="0098">Subsequently, an insulating film is formed so as to cover the gate insulating film 1306 and the gate electrode 1307. The insulating film is made of silicon, an oxide of silicon, or silicon by a plasma CVD method, a sputtering method, or the like. A film containing an inorganic material of a nitride of Nitride and a film containing an organic material such as an organic resin are single-layered or laminated. Form. Next, the insulating film is selectively etched by anisotropic etching mainly in the vertical direction. Insulating film 1310 (also called sidewall) that touches the side surface of the gate electrode 1307 by ching. To be exposed). The insulating film 1310 is an LDD (Lightly Doped dra). in) Used as a doping mask when forming regions.</p><p num="0099">Subsequently, a mask made of a resist formed by a photolithography method and a gate electrode 1 Semiconductor films 1305a, 1305b, using 307 and insulating film 1310 as masks. Impurity elements that impart n-type to 1305d and 1305f are added at high concentrations to indicate n-type. It forms a pure region 1311. Here, phosphorus (P) is used as an impurity element that imparts n-type. Use, 1x10<sup>19</sup>~1×10<sup>20</sup>/cm<sup>3</sup>Semiconductor film 1305a so as to be contained at the concentration of , 1305b, 1305d, 1305f, and higher concentration than impurity region 1308 It forms an impurity region 1311 showing the n-type of degree.</p><p num="0100">Through the above steps, n-channel thin film transistors 1300a, 1300b, 1300d , 1300f and p-channel thin film transistors 1300c, 1300e are formed (Fig. 17 (D)).</p><p num="0101">The n-channel thin film transistor 1300a is a semiconductor film 13 that overlaps with the gate electrode 1307. A channel formation region is formed in the region of 05a, and the gate electrode 1307 and the insulating film 1310 are formed. Impurity region 1311 is formed in the non-overlapping region to form the source region or drain region. , A region that overlaps the insulating film 1310 and is low between the channel formation region and the impurity region 1311. A concentration impurity region (LDD region) is formed. In addition, n-channel thin film transistors Similarly, 1300b, 1300d, and 1300f also have channel formation regions, low-concentration impurity regions, and Impurity region 1311 is formed.</p><p num="0102">The p-channel thin film transistor 1300c is a semiconductor film 13 that overlaps with the gate electrode 1307. A channel formation region is formed in the region of 05c, and the region does not overlap with the gate electrode 1307. An impurity region 1309 is formed that forms a loose region or a drain region. Also, p chi Similarly, the channel-type thin film transistor 1300e has a channel formation region and an impurity region 1309. Is formed. Here, p-channel thin film transistors 1300c, 130 Although the LDD region is not provided in 0e, the LDD region is provided in the p-channel thin film transistor. It may be provided, or the n-channel thin film transistor may be configured so that the LDD region is not provided. I.</p><p num="0103">Next, an insulating film is applied so as to cover the semiconductor films 1305a to 1305f, the gate electrode 1307, and the like. Formed as a single layer or laminated, and thin film transistors 1300a to 1300f are formed on the insulating film. Electrically connected to impurity regions 1309, 1311 forming the source or drain region Form a conductive film 1313 (see FIG. 18 (A)). For the insulating film, use the CVD method, sputtering method, No silicon oxides or silicon nitrides by SOG method, droplet ejection method, screen printing method, etc. Machine materials, polyimide, polyamide, benzocyclobutene, acrylic, epoxy and other organic materials It is formed in a single layer or laminated with a material, siloxane material, or the like. Here, two layers of the insulating film are applied. The first layer of the insulating film 1312a is formed of a silicon nitride film, and the second layer of the insulating film 13 As 12b, it is formed of a silicon oxide film. Further, the conductive film 1313 is a thin film transistor 1 A source electrode or a drain electrode of 300a to 1300f can be formed.</p><p num="0104">Before forming the insulating films 1312a and 1312b, or the insulating films 1312a and 1312 After forming one or more thin films of b, the crystallinity of the semiconductor film is restored and the semiconductor film is used. It is advisable to perform heat treatment for the purpose of activating the added impurity elements and hydrogenating the semiconductor film. For the heat treatment, a thermal annealing method, a laser annealing method, an RTA method, or the like may be applied.</p><p num="0105">The conductive film 1313 is made of aluminum (Al) or tan by the CVD method or the sputtering method. Gusten (W), Titanium (Ti), Tantalum (Ta), Molybdenum (Mo), Nickel ( Ni), platinum (Pt), copper (Cu), gold (Au), silver (Ag), manganese (Mn), neo Elements selected from Jim (Nd), Carbon (C), Silicon (Si), or these elements It is an alloy material or compound material that is the main component, and is formed by a single layer or a laminate. Aluminum The alloy material as the main component is, for example, a material containing aluminum as a main component and containing nickel, or a material containing nickel. Is an alloy material containing aluminum as the main component, nickel, and one or both of carbon and silicon. Equivalent to a fee. The conductive film 1313 is, for example, a barrier membrane and aluminum silicon (Al-S). i) Laminated structure of membrane and barrier membrane, barrier membrane and aluminum silicon (Al-Si) membrane and nitriding It is preferable to adopt a laminated structure of a titanium film and a barrier film. The barrier membranes are titanium and titanium. Corresponds to a thin film composed of a nitride, molybdenum, or a nitride of molybdenum. aluminum And aluminum silicon have low resistance and are inexpensive, so they are the materials that form the conductive film 1313. It is the best as a fee. In addition, if the upper and lower barrier layers are provided, aluminum or aluminum can be used. It is possible to prevent the occurrence of hilok of um silicon. It is also a highly reducing element. When a barrier membrane made of titanium was formed, a thin natural oxide film was formed on the crystalline semiconductor film. Even so, it is possible to reduce this natural oxide film and make good contact with the crystalline semiconductor film. Wear.</p><p num="0106">Next, an insulating film 1314 is formed so as to cover the conductive film 1313, and the insulating film 1314 is covered with the insulating film 1314. , Leads to form source or drain electrodes of thin film transistors 1300a, 1300f It forms conductive films 1315a and 1315b that are electrically connected to the electric film 1313, respectively. Well Also, form the source electrode or drain electrode of the thin film transistors 1300b and 1300e. A conductive film 1316 is formed which is electrically connected to the conductive film 1313. Conductive film 1 The 315a, 1315b and the conductive film 1316 may be formed of the same material at the same time. Conductive film 1 The 315a, 1315b and the conductive film 1316 are any of those shown in the conductive film 1313 described above. It can be formed using materials.</p><p num="0107">Subsequently, the conductive film 1317 that functions as an antenna is electrically connected to the conductive film 1316. (See Fig. 18 (B)).</p><p num="0108">The insulating film 1314 is made of silicon oxide (SiOx) or silicon nitride (SiOx) by the CVD method or sputtering method. SiNx), Silicon Nitride (SiOxNy) (x> y> 0), Silicon Nitride (SiNxO) Insulating film with oxygen or nitrogen such as y) (x> y> 0) and DLC (diamond-like carbon) -Bon) and other carbon-containing membranes, epoxies, polyimides, polyamides, polyvinylphenols , Benzocyclobutene, organic materials such as acrylic or siloxane materials such as siloxane resin It can be provided in a single layer or laminated structure composed of. The siloxane material is Si- Corresponds to a material containing an O-Si bond. Siloxane is a combination of silicon (Si) and oxygen (O). The skeletal structure is composed of connections. As a substituent, an organic group containing at least hydrogen (for example, al) Kill group, aromatic hydrocarbon) is used. A fluoro group can also be used as the substituent. To. Alternatively, an organic group containing at least hydrogen and a fluoro group may be used as the substituent. ..</p><p num="0109">The conductive film 1317 is used for markings such as CVD method, sputtering method, screen printing and gravure printing. It is formed of a conductive material by using a printing method, a droplet ejection method, a dispenser method, a plating method, or the like. Conductive materials are aluminum (Al), titanium (Ti), silver (Ag), copper (Cu), gold ( Au), Platinum (Pt) Nickel (Ni), Palladium (Pd), Tantalum (Ta), Mori Elements selected from butene (Mo), or alloy materials containing these elements as the main components It is a compound material and is formed in a single-layer structure or a laminated structure.</p><p num="0110">For example, a field for forming a conductive film 1317 that functions as an antenna using a screen printing method. In that case, conductivity in which conductor particles having a particle size of several nm to several tens of μm are dissolved or dispersed in an organic resin. It can be provided by selectively printing the sex paste. As conductor particles , Silver (Ag), Gold (Au), Copper (Cu), Nickel (Ni), Platinum (Pt), Palladium Any one of (Pd), tantalum (Ta), molybdenum (Mo), titanium (Ti), etc. One or more metal particles, silver halide fine particles, or dispersible nanoparticles can be used. .. The organic resin contained in the conductive paste is a binder for metal particles, a solvent, and a dispersant. And one or more selected from organic resins that function as a coating material can be used. Typical examples include organic resins such as epoxy resins and silicon resins. Also, for the formation of conductive films Therefore, it is preferable to extrude the conductive paste and then bake it. For example, conductive As a paste material, fine particles containing silver as the main component (for example, particle size 1 nm or more and 100 nm or less) ) Is used, it is cured by firing in a temperature range of 150 to 300 ° C to form a conductive film. Obtainable. In addition, fine particles containing solder or lead-free solder as the main component may be used. In this case, it is preferable to use fine particles having a particle size of 20 μm or less. Solder or lead free Solder has the advantage of low cost.</p><p num="0111">Further, the conductive films 1315a and 1315b will be used in the radio field intensity measuring device of the present invention in a later step. It can function as wiring that is electrically connected to the included secondary battery. Also, as an antenna When forming the effective conductive film 1317, it is electrically connected to the conductive films 1315a and 1315b. A conductive film may be separately formed so as to be used as wiring for connecting the conductive film to the secondary battery. I.</p><p num="0112">Next, after forming the insulating film 1318 so as to cover the conductive film 1317, the thin film transistor 13 A layer containing 00a to 1300f, a conductive film 1317, etc. (hereinafter referred to as "element forming layer 1319"). ) Is peeled off from the substrate 1301. Here, irradiate with laser light (for example, UV light) After forming an opening in the region avoiding the thin film transistors 1300a to 1300f (Fig. 18 (C)), the element forming layer 1319 is peeled off from the substrate 1301 using a physical force. be able to. Further, the opening formed before the element forming layer 1319 is peeled from the substrate 1301. An etching agent may be introduced into the mouth to selectively remove the release layer 1303. etching As the agent, a gas or liquid containing a halogen fluoride or an interhalogen compound is used. For example Chlorine trifluoride (ClF) as a gas containing halogen fluoride<sub>3</sub>) Is used. Then, The cambium 1319 is in a state of being peeled off from the substrate 1301. The release layer 1303 , You may leave a part without removing all. By doing this, the etchant is consumed It is possible to reduce the amount and shorten the processing time required for removing the release layer. In addition, the release layer 13 The element forming layer 1319 can be retained on the substrate 1301 even after the removal of 03. It will be possible. Further, by reusing the substrate 1301 from which the element forming layer 1319 has been peeled off. Therefore, the cost can be reduced.</p><p num="0113">The insulating film 1318 is made of silicon oxide (SiOx) or silicon nitride (SiOx) by the CVD method or sputtering method. SiNx), Silicon Nitride (SiOxNy) (x> y> 0), Silicon Nitride (SiNxO) Insulating film with oxygen or nitrogen such as y) (x> y> 0) and DLC (diamond-like carbon) -Bon) and other carbon-containing membranes, epoxies, polyimides, polyamides, polyvinylphenols , Benzocyclobutene, organic materials such as acrylic or siloxane materials such as siloxane resin It can be provided in a single layer or laminated structure composed of.</p><p num="0114">In this embodiment, after forming an opening in the element forming layer 1319 by irradiation with laser light, the present embodiment is used. The first sheet material 13 is formed on one surface of the element forming layer 1319 (exposed surface of the insulating film 1318). After the 20s are bonded together, the element forming layer 1319 is peeled off from the substrate 1301 (Fig. 19 (A)). reference).</p><p num="0115">Next, on the other surface (the surface exposed by peeling) of the element forming layer 1319, the second sheet material 13 After laminating 21, the second sheet material 13 is subjected to one or both of heat treatment and pressure treatment. Paste 21 (see Figure 19 (B)). 1st sheet material 1320, 2nd sheet material 1 As 321, a hot melt film or the like can be used.</p><p num="0116">In addition, as the first sheet material 1320 and the second sheet material 1321, a band that prevents static electricity, etc. A film with antistatic measures (hereinafter referred to as an antistatic film) can also be used. The antistatic film includes a film in which an antistatic material is dispersed in a resin, and a band. Examples thereof include a film to which a material capable of preventing electricity is attached. Antistatic material is provided The film may be a film provided with an antistatic material on one side, or both sides. The film may be provided with an antistatic material. Furthermore, antistatic is possible on one side For a film provided with a material, the surface provided with the antistatic material should be inside the film. It may be attached to the layer so as to be on the outside of the film, or it may be attached so as to be on the outside of the film. It should be noted that , The antistatic material may be provided on the entire surface or a part of the film. Obi here Antistatic materials include metals, indium and tin oxides (ITOs), and amphoteric surfactants. And surfactants such as cationic surfactants and nonionic surfactants can be used. Well In addition, as an antistatic material, a carboxyl group and a quaternary ammonium base are also added to the side chain. A resin material or the like containing a crosslinkable copolymer polymer can be used. Fill these materials It can be made into an antistatic film by sticking it on a film, kneading it, or applying it. it can. By sealing with an antistatic film, when handling as a product, it is external It is possible to prevent the semiconductor element from being adversely affected by static electricity and the like.</p><p num="0117">The battery is formed by connecting a thin-film secondary battery to the conductive films 1315a and 1315b. However, the connection with the secondary battery is made before the element forming layer 1319 is peeled off from the substrate 1301 (Fig. 1). You may go to the stage 8 (B) or FIG. 18 (C)), or from the substrate 1301 to the element forming layer 13 It may be performed after the 19 is peeled off (step of FIG. 19 (A)), or the element forming layer 1319 is first. It may be performed after sealing with the sheet material of No. 1 and the second sheet material (step of FIG. 19 (B)). After Below, using FIGS. 20 and 21, an example of connecting the element forming layer 1319 and the secondary battery to form the element forming layer 1319 and the secondary battery is used. explain.</p><p num="0118">In FIG. 18B, the conductive film 1317 and the conductive film 1315 functioning as an antenna at the same time. Forming conductive films 1331a and 1331b that are electrically connected to a and 1315b, respectively. Subsequently, the insulating film 1318 is applied so as to cover the conductive film 1317, the conductive film 1331a, and 1331b. After forming, the openings 1332a, so that the surfaces of the conductive films 1331a, 1331b are exposed. Form 1332b. After that, an opening is made in the element forming layer 1319 by irradiation with laser light. After forming, the element forming layer 1319 is formed on one surface (exposed surface of the insulating film 1318). After laminating the sheet material 1320 of 1, the element forming layer 1319 is peeled off from the substrate 1301. (See Figure 20 (A)).</p><p num="0119">Next, on the other surface (the surface exposed by peeling) of the element forming layer 1319, the second sheet material 13 After the 21 are bonded together, the element forming layer 1319 is peeled off from the first sheet material 1320. Subordinate Therefore, here, a material having a weak adhesive force is used as the first sheet material 1320. Continue to open Electrically contact with conductive films 1331a and 1331b via parts 1332a and 1332b, respectively. Subsequent conductive films 1334a and 1334b are selectively formed (see FIG. 20 (B)).</p><p num="0120">Conductive film 1334a and conductive film 1334b are used for CVD method, sputtering method, and screen printing. Conductivity using printing methods such as gravure printing, droplet ejection method, dispenser method, plating method, etc. Formed by material. Conductive film 1334a and conductive film 1334b are made of aluminum (Al), Titanium (Ti), Silver (Ag), Copper (Cu), Gold (Au), Platinum (Pt) Nickel (Ni) , Palladium (Pd), tantalum (Ta), molybdenum (Mo) Is an alloy material or compound material containing these elements as the main components, and has a single-layer structure or a laminated structure. Form.</p><p num="0121">Here, the conductive film 1334a is used after the element forming layer 1319 is peeled off from the substrate 1301. , 1334b is shown, but after forming the conductive films 1334a and 1334b The element forming layer 1319 may be peeled off from the substrate 1301.</p><p num="0122">Next, when a plurality of elements are formed on the substrate, the element forming layer 1319 is divided for each element. Cut off (see Figure 21 (A)). Division is laser irradiation device, dicing device, scribe A device or the like can be used. Here, one substrate is irradiated by irradiating a laser beam. Each of the plurality of elements formed in the above is divided.</p><p num="0123">Next, the fragmented element is electrically connected to the secondary battery (see FIG. 21 (B)). In this example A thin secondary battery is used as the battery, and the current collector thin film, the negative electrode active material layer, and the like. The solid electrolyte layer, the positive electrode active material layer, and the thin film layer of the current collector thin film are sequentially laminated.</p><p num="0124">Conductive film 1336a and conductive film 1336b are used for CVD method, sputtering method, and screen printing. Conductivity using printing methods such as gravure printing, droplet ejection method, dispenser method, plating method, etc. Formed by material. Conductive film 1336a and conductive film 1336b are made of aluminum (Al), Titanium (Ti), Silver (Ag), Copper (Cu), Gold (Au), Platinum (Pt) Nickel (Ni) , Palladium (Pd), tantalum (Ta), molybdenum (Mo) Is an alloy material or compound material containing these elements as the main components, and has a single-layer structure or a laminated structure. Form. As a conductive material, it is required to have good adhesion to the negative electrode active material and low resistance. Of these, aluminum, copper, nickel, vanadium and the like are particularly suitable.</p><p num="0125">The configuration of the thin-film secondary battery will be described in more detail below. The negative electrode active material layer 1 on the conductive film 1336a 381 is formed. Generally vanadium oxide (V)<sub>2</sub>O<sub>5</sub>) Etc. are used. Next, negative electrode activity A solid electrolyte layer 1382 is formed on the material layer 1381. Generally lithium phosphate (Li<sub>3</sub>PO<sub>4</sub>) Etc. are used. Next, a positive electrode active material layer 1383 is formed on the solid electrolyte layer 1382. To do. Generally lithium manganate (LiMn)<sub>2</sub>O<sub>4</sub>) Etc. are used. Lithium cobalt oxide Tium (LiCoO)<sub>2</sub>) And lithium nickelate (LiNiO)<sub>2</sub>) May be used. Next positive A current collector thin film 1384 to be an electrode is formed on the polar active material layer 1383. Current collector thin film 1384 Is required to have good adhesion to the positive electrode active material layer 1383 and low resistance. Copper, nickel, vanadium and the like can be used.</p><p num="0126">Negative electrode active material layer 1381, solid electrolyte layer 1382, positive electrode active material layer 1383, current collector thin Each thin film layer of the film 1384 may be formed by using a sputtering technique or may use a thin film deposition technique. I. The thickness of each layer is preferably 0.1 μm to 3 μm.</p><p num="0127">Next, a resin is applied to form an interlayer film 1385. Then, the interlayer film is etched and contoured. Form a hole. The interlayer film is not limited to resin, and may be another film such as a CVD oxide film. It is good, but it is desirable that it is a resin from the viewpoint of flatness. Also, using a photosensitive resin, Contact holes may be formed without using ching. Next, the wiring layer 1386 is placed on the interlayer film. By forming and connecting to the conductive film 1336b, the electrical connection of the secondary battery is secured.</p><p num="0128">Here, the conductive films 1334a and 1334b provided on the element forming layer 1319 are separately formed in advance. Conductive films 1336a and 1336b, which are the connection terminals for the thin-film secondary battery 1389, Connect each. Here, the connection between the conductive film 1334a and the conductive film 1336a, or the conductive film 13 The connection between 34b and conductive film 1336b is made of anisotropic conductive film (ACF (Anisotro)). pic Conductive Film)) and anisotropic conductive paste (ACP (Anis) Through an adhesive material such as otropic Conductive Paste)) It shows the case of electrically connecting by crimping. Here it has adhesiveness An example of connecting using the conductive particles 1338 contained in the resin 1337 is shown. Also, others Also, use conductive adhesives such as silver paste, copper paste or carbon paste, and solder joints. It is also possible to make a connection using it.</p><p num="0129">The transistor configuration can take various forms. The specific specific shown in this example It is not limited to the configuration. For example, use a multi-gate structure with two or more gate electrodes. You may. With a multi-gate structure, the channel areas are connected in series. Therefore, the configuration is such that a plurality of transistors are connected in series. Multi-gate structure By doing so, the off-current is reduced, the withstand voltage of the transistor is improved, and the reliability is improved. , Even if the voltage between drain and source changes when operating in the saturated region, between drain and source The current does not change so much, and flat characteristics can be obtained. Also, above and below the channel The structure may be such that the gate electrode is arranged in. Gate electrodes are placed above and below the channel By adopting a structure that has a structure, the channel region increases, so the current value is increased and the depletion layer is created. It becomes easier to hear and the S value can be improved. Gate electrodes are placed above and below the channel Then, the configuration is such that a plurality of transistors are connected in parallel.</p><p num="0130">Further, the structure may be such that the gate electrode is arranged above the channel, or the game may be located below the channel. It may have a structure in which the electrodes are arranged, a normal stagger structure, or a reverse stagger structure. The channel area may be divided into a plurality of areas, or a plurality of channel areas may be divided into a plurality of areas. It may be connected in parallel or in series. Also source to channel (or part of it) The electrodes and drain electrodes may overlap. Source electrode on channel (or part of it) By making the structure where the and drain electrodes overlap, electric charge accumulates in a part of the channel. , It is possible to prevent the operation from becoming unstable. There may also be an LDD area. LD By providing the D region, the off-current is reduced and the withstand voltage of the transistor is improved for reliability. Even if the drain-source voltage changes when operating in the saturation region, the drain The current between sources does not change so much, and flat characteristics can be obtained.</p><p num="0131">The method for manufacturing the radio wave intensity measuring device of this embodiment is described in the radio wave of other examples described in the present specification. It can be applied to strength measuring devices.</p>
<p num="0132">In this embodiment, the figure relates to an example of a method for manufacturing the radio field intensity measuring device shown in the above embodiment. This will be described with reference to the surface. In this embodiment, the antenna and the signal in the radio field intensity measuring device A configuration in which the processing circuits are provided on the same substrate will be described. In addition, ante on the same board at a time A signal processing circuit is formed using a transistor in which a channel formation region is formed on a single crystal substrate. To be done. Transistor characteristics vary by using transistors formed on a single crystal substrate. It is suitable because the radio field intensity measuring device can be configured with a transistor having a small amount of damage. Well Further, as the battery in the signal processing circuit, the thin film secondary battery described in the first embodiment is used. The example that was used will be described.</p><p num="0133">First, regions 2304 and 2306 (hereinafter, region 230) in which the elements are separated from the semiconductor substrate 2300. (Also referred to as 4, 2306) is formed (see Fig. 22 (A)). Provided on semiconductor substrate 2300 The regions 2304 and 2306 are the insulating films 2302 (also called field oxide films), respectively. Separated by. In addition, here, the semiconductor substrate 2300 has an n-type conductive type. A p-well 2307 is installed in the region 2306 of the semiconductor substrate 2300 using a single crystal Si substrate. A digit example is shown.</p><p num="0134">Further, the semiconductor substrate 2300 can be used without particular limitation as long as it is a semiconductor substrate. For example, a single crystal Si substrate having an n-type or p-type conductive type, a compound semiconductor substrate (GaAs group) Plate, InP substrate, GaN substrate, SiC substrate, sapphire substrate, ZnSe substrate, etc.), bonding Separation by Implanted Oxyg SOI (Silicon on Insulator) substrate manufactured using the en) method Etc. can be used.</p><p num="0135">The device separation regions 2304 and 2306 are designated by the selective oxidation method (LOCOS (Local Oxida). The procedure of Silicon) method) or the trench separation method can be used as appropriate. ..</p><p num="0136">Further, the p-well formed in the region 2306 of the semiconductor substrate 2300 is the semiconductor substrate 2300. It can be formed by selectively introducing an impurity element having a p-type conductive type. To. Impurity elements showing p-type include boron (B), aluminum (Al), and gallium ( Ga) etc. can be used.</p><p num="0137">In this embodiment, a semiconductor substrate having an n-type conductive type is used as the semiconductor substrate 2300. Therefore, no impurity element is introduced into region 2304, but an impurity source showing n-type. N-wells may be formed in region 2304 by introducing the element. Impurity source indicating n-type As the element, phosphorus (P), arsenic (As) and the like can be used. On the other hand, the p-type conductive type When using a semiconductor substrate having a semiconductor substrate, an impurity element showing n-type is introduced into region 2304 to n A well may be formed and no impurity element may be introduced into the region 2306.</p><p num="0138">Next, insulating films 2332 and 2334 are formed so as to cover the regions 2304 and 2306, respectively. (See Figure 22 (B)).</p><p num="0139">The insulating films 2332 and 2334 are, for example, heat-treated and provided on the semiconductor substrate 2300. Insulating film 2332, 23 with silicon oxide film by oxidizing the surface of regions 2304, 2306 34 can be formed. In addition, after forming a silicon oxide film by the thermal oxidation method, nitriding is performed. By nitriding the surface of the silicon oxide film by doing the reason, the silicon oxide film, oxygen and nitrogen It may be formed by a laminated structure with a film having an element (silicon oxynitride film).</p><p num="0140">In addition, as described above, even if the insulating films 2332 and 2334 are formed by using plasma treatment. Good. For example, high density on the surfaces of regions 2304 and 2306 provided on the semiconductor substrate 2300. Insulating films 2332, 2334 by performing oxidation treatment or nitriding treatment by plasma treatment It can be formed of a silicon oxide (SiOx) film or a silicon nitride (SiNx) film. Well In addition, after oxidizing the surfaces of regions 2304 and 2306 by high-density plasma treatment, The nitriding treatment may be performed by performing the high-density plasma treatment again. In this case, area 2 A silicon oxide film is formed in contact with the surfaces of 304 and 2306, and silicon oxynitride is formed on the silicon oxide film. A film is formed, and the insulating films 2332 and 2334 are films in which a silicon oxide film and a silicon oxynitride film are laminated. Will be. In addition, after forming a silicon oxide film on the surface of regions 2304 and 2306 by the thermal oxidation method. Oxidation treatment or nitriding treatment may be performed by high-density plasma treatment.</p><p num="0141">In addition, the insulating films 2332 and 23 formed in the regions 2304 and 2306 of the semiconductor substrate 2300. 34 functions as a gate insulating film in the transistor to be completed later.</p><p num="0142">Next, to cover the insulating films 2332 and 2334 formed above the regions 2304 and 2306. A conductive film is formed on the surface (see FIG. 22 (C)). Here, as the conductive film, the conductive film 2336 An example in which the conductive film 2338 is laminated in order is shown. Of course, the conductive film is a single layer or It may be formed in a laminated structure of three or more layers.</p><p num="0143">The conductive films 2336 and 2338 include tantalum (Ta), tungsten (W), and titanium ( Ti), molybdenum (Mo), aluminum (Al), copper (Cu), chromium (Cr), d Elements selected from of (Nb), etc. or alloy materials containing these elements as the main components It can be formed of a compound material. Further, these elements are formed of a nitrided metal nitride film. You can also do it. In addition, it is represented by polycrystalline silicon doped with impurity elements such as phosphorus. It can also be formed from a semiconductor material.</p><p num="0144">Here, tantalum nitride is used as the conductive film 2336, and the conductive film 2338 is formed on the tantalum nitride. It is provided in a laminated structure using tungsten. In addition, as conductive film 2336, Using a single layer or laminated film selected from tungsten nitride, molybdenum nitride or titanium nitride, A single layer or laminated film selected from tantalum, molybdenum, and titanium is used as the conductive film 2338. Can be</p><p num="0145">Next, the conductive films 2336 and 2338 provided in layers are selectively etched and removed. As a result, conductive films 2336 and 2338 remain in the upper part of regions 2304 and 2306. The gate electrodes 2340 and 2342 are formed, respectively (see FIG. 23 (A)).</p><p num="0146">Next, a resist mask 2348 is selectively formed so as to cover the region 2304, and the resist is concerned. Impurity elements are introduced into region 2306 using the mask 2348 and gate electrode 2342 as masks. (See Fig. 23 (B)). As an impurity element, n An impurity element that imparts a mold or an impurity element that imparts a p-type is used. Impurity element showing n type As, phosphorus (P), arsenic (As) and the like can be used. With impurity elements showing p-type Therefore, boron (B), aluminum (Al), gallium (Ga), etc. can be used. To. Here, phosphorus (P) is used as the impurity element.</p><p num="0147">In FIG. 23 (B), the source area is located in region 2306 by introducing an impurity element. Impurity region 2352 and channel formation region 2350 forming a region or drain region are formed. Is done.</p><p num="0148">Next, a resist mask 2366 is selectively formed so as to cover the region 2306, and the resist is concerned. Impurity elements are introduced into region 2304 using the mask 2366 and gate electrode 2340 as masks. (See Fig. 23 (C)). As an impurity element, n An impurity element that imparts a mold or an impurity element that imparts a p-type is used. Impurity element showing n type As, phosphorus (P), arsenic (As) and the like can be used. With impurity elements showing p-type Therefore, boron (B), aluminum (Al), gallium (Ga), etc. can be used. To. Here, it has a conductive type different from the impurity element introduced in region 2306 in FIG. 23 (B). Impurity element (for example, boron (B)) is introduced. As a result, the source area is in area 2304. It forms an impurity region 2370 and a channel formation region 2368 that form a region or drain region. Is done.</p><p num="0149">Next, the second extinction so as to cover the insulating films 2332 and 2334 and the gate electrodes 2340 and 2342. A marginal film 2372 is formed, and regions 2304 and 2306 are formed on the second insulating film 2372, respectively. Form wiring 2374 that electrically connects to the formed impurity regions 2352 and 2370. (See Figure 24 (A)).</p><p num="0150">The second insulating film 2372 is made of silicon oxide (SiOx) or nitriding by the CVD method or the sputtering method. Silicon (SiNx), Silicon Nitride (SiOxNy) (x> y> 0), Silicon Nitride (Si) Insulating film with oxygen or nitrogen such as NxOy) (x> y> 0) or DLC (Diamond-like carbon) Carbon-containing membranes such as Ikucarbon), epoxies, polyimides, polyamides, polyvinylfe Organic materials such as ol, benzocyclobutene and acrylic, or siloxa such as siloxane resin It can be provided in a single layer or laminated structure made of a material. What is a siloxane material? Corresponds to a material containing a Si-O-Si bond. Siloxane is silicon (Si) and oxygen (O) ) Consists of the skeletal structure. Organic groups containing at least hydrogen as substituents (eg Alkyl groups, aromatic hydrocarbons) are used. Use a fluoro group as the substituent You can also. Alternatively, as a substituent, at least an organic group containing hydrogen and a fluoro group are used. May be good.</p><p num="0151">Wiring 2374 is made of aluminum (Al) and tongue by the CVD method or sputtering method. Stainless (W), Titanium (Ti), Tantalum (Ta), Molybdenum (Mo), Nickel (N) i), platinum (Pt), copper (Cu), gold (Au), silver (Ag), manganese (Mn), neodymium Elements selected from Neodymium (Nd), Carbon (C), Silicon (Si), or mainly these elements It is an alloy material or compound material as a component, and is formed by a single layer or a laminate. Mainly aluminum The alloy material as a component is, for example, a material containing aluminum as a main component and nickel as a main component, or a material containing nickel. , Aluminum as the main component, nickel and one or both of carbon and silicon Corresponds to. Wiring 2374 is, for example, a barrier membrane and aluminum silicon (Al-Si). Laminated structure of membrane and barrier membrane, barrier membrane, aluminum silicon (Al-Si) membrane and titer nitride It is advisable to adopt a laminated structure of an membrane and a barrier membrane. The barrier membrane is titanium and titanium nitrogen. It corresponds to a thin film composed of a compound, molybdenum, or a nitride of molybdenum. Aluminum and a Luminium silicon has a low resistance value and is inexpensive, so it is used as a material for forming wiring 2374. Is the best. In addition, if the upper and lower barrier layers are provided, aluminum or aluminum is used. It is possible to prevent the occurrence of recon hilok. In addition, titanium, which is a highly reducing element, When a barrier membrane made of is formed, a thin natural oxide film is formed on the crystalline semiconductor film. Also, this natural oxide film can be reduced to make good contact with the crystalline semiconductor film.</p><p num="0152">Although the structure of the transistor constituting the transistor of the present invention is limited to the structure shown in the figure. It should be added that it is not. For example, a transformer with a structure such as an inverted stagger structure or a fin FET structure. It can take the structure of a gista. FinFET structure for miniaturization of transistor size It is suitable because it can suppress the accompanying short-channel effect.</p><p num="0153">Further, in the radio field intensity measuring device of the present invention, a battery capable of storing electric power in a signal processing circuit It is characterized by having. As a battery, a controller such as an electric double layer capacitor It is preferable to use a sensor or a thin-film secondary battery. Therefore, in this embodiment, this embodiment In the transistor manufactured in the above, the connection with the thin-film secondary battery will be described.</p><p num="0154">In this embodiment, the secondary battery is formed by stacking it on the wiring 2374 connected to the transistor. Will be done. The secondary battery includes a current collector thin film, a negative electrode active material layer, a solid electrolyte layer, a positive electrode active material layer, and a current collector. The thin film layers of the thin film are sequentially laminated (Fig. 24 (B)). Therefore, it also serves as a current collector thin film for secondary batteries. The material of the wiring 2374 used is required to have good adhesion to the negative electrode active material and low resistance. Of these, aluminum, copper, nickel, vanadium and the like are particularly suitable.</p><p num="0155">The configuration of the thin-film secondary battery will be described in more detail below. Negative electrode active material layer 2391 on wiring 2374. Is formed. Generally vanadium oxide (V)<sub>2</sub>O<sub>5</sub>) Etc. are used. Next, the negative electrode active material layer A solid electrolyte layer 2392 is formed on 2391. Generally lithium phosphate (Li<sub>3</sub>PO<sub>4</sub>) Etc. are used. Next, the positive electrode active material layer 2393 is formed on the solid electrolyte layer 2392. Generally lithium manganate (LiMn)<sub>2</sub>O<sub>4</sub>) Etc. are used. Lithium cobalt oxide (LiCoO<sub>2</sub>) And lithium nickelate (LiNiO)<sub>2</sub>) May be used. Next, the positive electrode active material A current collector thin film 2394 to be an electrode is formed on the quality layer 2393. Current collector thin film 2394 is a positive electrode Good adhesion to the active material layer 2393 and low resistance are required, and aluminum, copper, and d Keckel, vanadium and the like can be used.</p><p num="0156">Negative electrode active material layer 2391, solid electrolyte layer 2392, positive electrode active material layer 2393, current collector thin Each thin film layer of the film 2394 may be formed by using a sputtering technique or may use a thin film deposition technique. I. The thickness of each layer is preferably 0.1 μm to 3 μm.</p><p num="0157">Next, a resin is applied to form an interlayer film 2396. Then, the interlayer film 2396 is etched. Form an contact hole. The interlayer film is not limited to resin, but is another film such as a CVD oxide film. However, it is desirable that it is a resin from the viewpoint of flatness. Also, using a photosensitive resin, Contact holes may be formed without etching. Next, wire on the interlayer film 2396 Secure the electrical connection of the secondary battery by forming layer 2395 and connecting with wiring 2397 To.</p><p num="0158">With the above configuration, the single crystal substrate in the radio field intensity measuring device of the present invention A transistor may be formed on the top, and a thin film secondary battery may be placed on the transistor. Therefore, the present invention In the radio field intensity measuring device, it is possible to achieve the flexibility that achieves ultra-thinness and miniaturization. To.</p><p num="0159">In addition, the method of manufacturing the radio field intensity measuring apparatus of this Example is the other embodiment described in this specification. It can be applied to a radio field intensity measuring device.</p>
<p num="0160">In this embodiment, the drawings relate to an example of a method of manufacturing a radio field intensity measuring device different from that of the second embodiment. Will be described with reference to.</p><p num="0161">First, an insulating film is formed on the substrate 2600. Here, a single crystal Si having an n-type conductive type Is used as the substrate 2600, and the insulating film 2602 and the insulating film 2604 are formed on the substrate 2600. (See Figure 25 (A)). For example, the insulating film 2 is formed by heat-treating the substrate 2600. Silicon oxide (SiOx) is formed as 602, and the CVD method is used on the insulating film 2602. A film of silicon nitride (SiNx) is formed.</p><p num="0162">Further, the substrate 2600 can be used without particular limitation as long as it is a semiconductor substrate. For example , N-type or p-type conductive type single crystal Si substrate, compound semiconductor substrate (GaAs substrate, I nP substrate, GaN substrate, SiC substrate, sapphire substrate, ZnSe substrate, etc.), bonding method Or SIMOX (Separation by IMplanted OXygen) For SOI (Silicon on Insulator) substrates manufactured using the method Can be</p><p num="0163">Further, the insulating film 2604 is subjected to high-density plasma treatment after the insulating film 2602 is formed. It may be provided by nitriding the insulating film 2602. Insulation provided on the substrate 2600 The film may be provided in a single layer or a laminated structure of three or more layers.</p><p num="0164">Next, the pattern of the resist mask 2606 is selectively formed on the insulating film 2604, and the pattern is formed. By selectively etching the Gist Mask 2606 as a mask, the substrate 26 A recess 2608 is selectively formed at 00 (see FIG. 25 (B)). Substrate 2600, insulating film 2 Etching of 602 and 2604 is performed by dry etching using plasma. I can.</p><p num="0165">Next, after removing the pattern of the resist mask 2606, the recess formed in the substrate 2600. An insulating film 2610 is formed so as to fill 2608 (see FIG. 25 (C)).</p><p num="0166">The insulating film 2610 is made of silicon oxide or silicon nitride by using a CVD method or a sputtering method. , Silicon nitriding (SiOxNy) (x> y> 0), Silicon nitriding (SiNxO) It is formed using an insulating material such as y) (x> y> 0). Here, as the insulating film 2610, TEOS (Tetraethyl orthosilicate) gas by normal pressure CVD method or reduced pressure CVD method Is used to form a silicon oxide film.</p><p num="0167">Next, grinding, polishing or CMP (Chemical Mechanical Po) The surface of the substrate 2600 is exposed by performing the lishing) treatment. here By exposing the surface of the substrate 2600, it is formed in the recess 2608 of the substrate 2600. Regions 2612 and 2613 are provided between the insulating films 2611. The insulating film 2611 is The insulating film 2610 formed on the surface of the substrate 2600 is used for grinding, polishing or CMP processing. It was obtained by being removed more. Subsequently, an impurity source having a p-type conductive type By selectively introducing the elements, p-well 2615 is added to the area 2613 of the substrate 2600. Form (see Figure 26 (A)).</p><p num="0168">Impurity elements showing p-type include boron (B), aluminum (Al), and gallium (Ga). ) Etc. can be used. Here, as an impurity element, boron (B) is used as region 2613. Introduce to.</p><p num="0169">In this embodiment, a semiconductor substrate having an n-type conductive type is used as the substrate 2600. Therefore, no impurity element is introduced into region 2612, but an impurity element showing n-type is derived. By entering, n wells may be formed in region 2612. As an impurity element showing n type Therefore, phosphorus (P), arsenic (As) and the like can be used.</p><p num="0170">On the other hand, when a semiconductor substrate having a p-type conductive type is used, the n-type is not shown in the region 2612. A structure in which pure elements are introduced to form n-wells and no impurity elements are introduced into region 2613. It may be successful.</p><p num="0171">Next, the insulating films 2632 and 2634 are placed on the surface of the regions 2612 and 2613 of the substrate 2600. Each is formed (see Fig. 26 (B)).</p><p num="0172">The insulating films 2632 and 2634 are, for example, heat-treated to provide a region 26 provided on the substrate 2600. By oxidizing the surfaces of 12 and 2613, the insulating films 2632 and 2634 are formed with a silicon oxide film. Can be formed. In addition, after forming a silicon oxide film by the thermal oxidation method, nitriding treatment is performed. By nitriding the surface of the silicon oxide film, it has the silicon oxide film, oxygen and nitrogen. It may be formed by a laminated structure with a film (silicon oxynitride film).</p><p num="0173">In addition, as described above, even if the insulating films 2632 and 2634 are formed by using plasma treatment. Good. For example, high-density plaza on the surfaces of regions 2612 and 2613 provided on the substrate 2600. By performing oxidation treatment or nitriding treatment by processing, the insulating films 2632 and 2634 can be obtained. It can be formed of a silicon oxide (SiOx) film or a silicon nitride (SiNx) film. Also high After performing oxidation treatment on the surfaces of regions 2612 and 2613 by density plasma treatment, it is high again. Nitriding treatment may be performed by performing density plasma treatment. In this case, area 2612 , A silicon oxide film is formed in contact with the surface of 2613, and on the silicon oxide film (silicon oxynitride film). Is formed, and the insulating films 2632 and 2634 are formed by laminating a silicon oxide film and a silicon oxynitride film. Become. In addition, after forming a silicon oxide film on the surface of regions 2612 and 2613 by the thermal oxidation method, Oxidation treatment or nitriding treatment may be performed by high-density plasma treatment.</p><p num="0174">The insulating films 2632 and 2634 formed in the regions 2612 and 2613 of the substrate 2600 are , It functions as a gate insulating film in the transistor to be completed later.</p><p num="0175">Next, the insulating film 26 formed above the regions 2612 and 2613 provided on the substrate 2600. A conductive film is formed so as to cover 32 and 2634 (see FIG. 26 (C)). Here, the conductive film As an example, an example in which the conductive film 2636 and the conductive film 2638 are laminated in order is shown. Mochi Of course, the conductive film may be formed of a single layer or a laminated structure of three or more layers.</p><p num="0176">The conductive films 2636 and 2638 include tantalum (Ta), tungsten (W), and titanium ( Ti), molybdenum (Mo), aluminum (Al), copper (Cu), chromium (Cr), d Elements selected from of (Nb), etc. or alloy materials containing these elements as the main components It can be formed of a compound material. Further, these elements are formed of a nitrided metal nitride film. You can also do it. In addition, it is represented by polycrystalline silicon doped with impurity elements such as phosphorus. It can also be formed from a semiconductor material.</p><p num="0177">Here, tantalum nitride is used as the conductive film 2636, and the conductive film 2638 is formed on the tantalum nitride. It is provided in a laminated structure using tungsten. In addition, as conductive film 2636, Single layer selected from tantalum nitride, tungsten nitride, molybdenum nitride or titanium nitride Use a laminated film and use tungsten, tantalum, molybdenum, or titanium as the conductive film 2638. A single layer or a laminated film selected from the above can be used.</p><p num="0178"> Next, the conductive films 2636 and 2638 provided in layers are selectively etched and removed. By doing so, the conductive film 2636 on the upper part of the regions 2612, 2613 of the substrate 2600. , 2638 remain, and conductive films 2640 and 2642, which function as gate electrodes, respectively. Form (see Figure 27 (A)). Further, here, in the substrate 2600, the conductive film 264 Make sure that the surfaces of areas 2612 and 2613 that do not overlap with 0 and 2642 are exposed.</p><p num="0179">Specifically, it was formed below the conductive film 2640 in the region 2612 of the substrate 2600. Of the insulating film 2632, the portion that does not overlap with the conductive film 2640 is selectively removed, and the conductive film 2 The ends of the 640 and the insulating film 2632 are formed so as to roughly coincide with each other. Also, the territory of the board 2600 In region 2613, of the insulating film 2634 formed below the conductive film 2642, the conductive film The part that does not overlap with the film 2642 is selectively removed, and the end of the conductive film 2642 and the insulating film 2634 Is formed so as to roughly match.</p><p num="0180">In this case, at the same time as the formation of the conductive films 2640 and 2642, the insulating film and the like in the non-overlapping portion are removed. Alternatively, the resist mask or the conductive film remaining after forming the conductive films 2640 and 2642 may be used. 2640 and 2642 may be used as a mask to remove the insulating film and the like in the non-overlapping portion.</p><p num="0181">Next, impurity elements are selectively introduced into the regions 2612 and 2613 of the substrate 2600 (Fig. 27). See (B)). Here, the region 2613 is given an n-type using the conductive film 2642 as a mask. Selectively introduce low-concentration impurity elements and use conductive film 2640 as a mask in region 2612. Selectively introduce low-concentration impurity elements that impart the mold. As an impurity element that imparts n-type Can use phosphorus (P), arsenic (As), and the like. As an impurity element that imparts p-type Boron (B), aluminum (Al), gallium (Ga), etc. can be used. ..</p><p num="0182">Next, sidewalls 2654 in contact with the side surfaces of the conductive films 2640 and 2642 are formed. Ingredients Physically, silicon, an oxide of silicon, or silicon by plasma CVD method, sputtering method, etc. A film containing an inorganic material of a nitride of Nitride and a film containing an organic material such as an organic resin are single-layered or laminated. Form. Then, the insulating film is selectively etched by anisotropic etching mainly in the vertical direction. Can be etched into and formed to contact the sides of the conductive films 2640, 2642. To. The sidewall 2654 is LDD (Lightly Doped drai). n) Used as a doping mask when forming regions. Also, here, Saido The oil 2654 also touches the side surface of the insulating film formed below the conductive films 2640 and 2642. It is formed so as to.</p><p num="0183">Subsequently, the substrate 2 is masked by the sidewall 2654, the conductive film 2640, and 2642. By introducing impurity elements into the 600 regions 2612, 2613, the source region or It forms an impurity region that functions as a drain region (see Fig. 27 (C)). Here, the basis High with sidewall 2654 and conductive film 2642 masked in area 2613 of plate 2600 Introducing an impurity element that imparts n-type concentration, leading to sidewall 2654 in region 2612 An impurity element that imparts a high concentration of p-type is introduced using the electric film 2640 as a mask.</p><p num="0184">As a result, the region 2612 of the substrate 2600 does not form a source region or a drain region. Pure region 2658, low-concentration impurity region 2660 forming LDD region, and channel formation Region 2656 is formed. In addition, the area 2613 of the substrate 2600 includes a source area or a de. Impurity region 2664 forming a rain region and low-concentration impurity region 2 forming an LDD region 666 and a channel formation region 2662 are formed.</p><p num="0185">In this embodiment, the area 261 of the substrate 2600 that does not overlap with the conductive films 2640 and 2642. Impurity elements are introduced with 2, 2613 exposed. Therefore, the board 2600 Channel formation regions 2656 and 2662 formed in regions 2612 and 2613, respectively, It can be formed in a self-aligned manner with the conductive films 2640 and 2642.</p><p num="0186">Next, cover the insulating film, conductive film, etc. provided on the areas 2612 and 2613 of the substrate 2600. A second insulating film 2677 is formed in the sea urchin, and an opening 2678 is formed in the insulating film 2677 ( See Figure 28 (A)).</p><p num="0187">The second insulating film 2677 is made of silicon oxide (SiOx) or nitriding by a CVD method or a sputtering method. Silicon (SiNx), Silicon Nitride (SiOxNy) (x> y> 0), Silicon Nitride (Si) Insulating film with oxygen or nitrogen such as NxOy) (x> y> 0) or DLC (Diamond-like carbon) Carbon-containing membranes such as Ikucarbon), epoxies, polyimides, polyamides, polyvinylfe Organic materials such as ol, benzocyclobutene and acrylic, or siloxa such as siloxane resin It can be provided in a single layer or laminated structure made of a material. What is a siloxane material? Corresponds to a material containing a Si-O-Si bond. Siloxane is silicon (Si) and oxygen (O) ) Consists of the skeletal structure. Organic groups containing at least hydrogen as substituents (eg Alkyl groups, aromatic hydrocarbons) are used. Use a fluoro group as the substituent You can also. Alternatively, as a substituent, at least an organic group containing hydrogen and a fluoro group are used. May be good.</p><p num="0188">Next, a conductive film 2680 is formed in the opening 2678 by using the CVD method, and the conductive film 2680 is formed. Selectively select conductive films 2682a to 2682d on the insulating film 2677 so as to electrically connect with Form (see Figure 28 (B)).</p><p num="0189">Conductive films 2680 and 2682a to 2682d are prepared by the CVD method, sputtering method, etc. Luminium (Al), Tungsten (W), Titanium (Ti), Tantalum (Ta), Morib Den (Mo), Nickel (Ni), Platinum (Pt), Copper (Cu), Gold (Au), Silver (Ag) , Manganese (Mn), Neodymium (Nd), Carbon (C), Silicon (Si) Elements, or alloy materials or compound materials containing these elements as the main components, in a single layer or laminated. Form. An alloy material containing aluminum as a main component is, for example, aluminum as a main component. A material containing nickel or aluminum as the main component, and one of nickel, carbon and silicon Corresponds to an alloy material containing one or both. Conductive films 2680 and 2682a to 2682d are For example, a laminated structure of a barrier film, an aluminum silicon (Al-Si) film, and a barrier film, burrs Adopted a laminated structure of a film, aluminum silicon (Al-Si) film, titanium nitride film, and barrier film Good to use. The barrier membrane is titanium, titanium nitride, molybdenum, or molybdenum. It corresponds to a thin film made of den's nitride. Aluminum and aluminum silicon have resistance values As a material for forming conductive films 2680 and 2682a to 2682d because it is low and inexpensive. Optimal. In addition, if the upper and lower barrier layers are provided, aluminum or aluminum series will be provided. It is possible to prevent the occurrence of Khilok of the computer. Also, is it titanium, which is a highly reducing element? When a barrier membrane is formed, even if a thin natural oxide film is formed on the crystalline semiconductor film, , This natural oxide film can be reduced to make good contact with the crystalline semiconductor film. This Here, the conductive films 2680 and 2682a to 2682d are made of tungsten (W) by the CVD method. Can be formed by selective growth.</p><p num="0190">Through the above steps, the p-type transistor formed in the region 2612 of the substrate 2600 and the region It is possible to obtain an n-type transistor formed in the region 2613.</p><p num="0191">The structure of the transistor constituting the radio field intensity measuring device of the present invention is limited to the structure shown in the figure. It should be noted that this is not the case. For example, a structure such as an inverted stagger structure or a fin FET structure It can take the structure of a transistor. Due to the finFET structure, the transistor size is very small. It is suitable because it can suppress the short-channel effect associated with thinning.</p><p num="0192">Further, in the radio field intensity measuring device of the present invention, a battery capable of storing electric power in the signal processing circuit It is characterized by having a terry. As a battery, an electric double layer capacitor or thin It is preferable to use a membrane secondary battery. Therefore, in this embodiment, the work in this embodiment The connection between the manufactured transistor and the thin-film secondary battery will be described.</p><p num="0193">In this embodiment, the secondary battery is laminated on the conductive film 2682d connected to the transistor. It is formed. The secondary battery includes a current collector thin film, a negative electrode active material layer, a solid electrolyte layer, a positive electrode active material layer, and a collector. The thin films of the electric thin film are sequentially laminated (Fig. 28 (B)). Therefore, the current collector thin film of the secondary battery The material of the conductive film 2682d, which is also used as the negative electrode active material, has good adhesion to the negative electrode active material and has low resistance. Is required, and aluminum, copper, nickel, vanadium and the like are particularly suitable.</p><p num="0194">The configuration of the thin-film secondary battery will be described in more detail below. The negative electrode active material layer 26 on the conductive film 2682d 91 is formed. Generally vanadium oxide (V)<sub>2</sub>O<sub>5</sub>) Etc. are used. Next, the negative electrode active material A solid electrolyte layer 2692 is formed on the quality layer 2691. Generally lithium phosphate (Li<sub>3</sub>P O<sub>4</sub>) Etc. are used. Next, a positive electrode active material layer 2693 is formed on the solid electrolyte layer 2692. To. Generally lithium manganate (LiMn)<sub>2</sub>O<sub>4</sub>) Etc. are used. Lithium cobalt oxide Umm (LiCoO)<sub>2</sub>) And lithium nickelate (LiNiO)<sub>2</sub>) May be used. Next, the positive electrode A current collector thin film 2694 to be an electrode is formed on the active material layer 2693. Current collector thin film 2694 Good adhesion to the positive electrode active material layer 2693 and low resistance are required, and aluminum and copper are required. , Nickel, vanadium and the like can be used.</p><p num="0195">Negative electrode active material layer 2691, solid electrolyte layer 2692, positive electrode active material layer 2693, current collector thin Each thin film layer of the film 2694 may be formed by using a sputtering technique or may use a thin film deposition technique. I. The thickness of each layer is preferably 0.1 μm to 3 μm.</p><p num="0196">Next, a resin is applied to form an interlayer film 2696. Then, the interlayer film 2696 is etched. Form an contact hole. The interlayer film 2696 is not limited to resin, but other films such as CVD oxide film. It may be a film, but it is preferably a resin from the viewpoint of flatness. Also, use photosensitive resin It may be used to form contact holes without etching. Next, interlayer film 2696 By forming the wiring layer 2695 on top and connecting it to the wiring 2697, the electricity of the thin film secondary battery Secure the connection.</p><p num="0197">With the above configuration, the single crystal substrate in the radio field intensity measuring device of the present invention A transistor may be formed on the top, and a thin film secondary battery may be placed on the transistor. Therefore, the present invention In the radio field intensity measuring device, it is possible to achieve the flexibility that achieves ultra-thinness and miniaturization. To.</p><p num="0198">In addition, the method of manufacturing the radio field intensity measuring apparatus of this Example is the other embodiment described in this specification. It can be applied to a radio field intensity measuring device.</p>
<p num="0199">In this embodiment, the use of the radio field intensity measuring device of the present invention will be described. Radio field intensity measurement of the present invention The fixed device is a medical device, pacemaker, or other item that is likely to malfunction due to radio waves. In order to protect it, it visually appeals that the radio field strength around the article is strong, so-called radio wave strength. It can be used as a degree detector.</p><p num="0200">In this embodiment, referring to FIGS. 29 to 36, an application example of the present invention and one of the products to which they are attached. An example will be described.</p><p num="0201">FIG. 29 (a) is an example of the state of the finished product of the radio field intensity detector according to the present invention. Management badge A radio field intensity measuring device 3001 is formed on the 3000. Also, management badge 3000 The ID 3002 and photo 3003 of the worker wearing the management badge are pasted on the top. There is. Such a management badge 3000 is worn by an operator, for example, as shown in FIG. 29 (b). It is used by attaching it to the work clothes 3004 that you are wearing. The worker has a signal strength detector When entering an area where the signal strength is extremely strong, the color change of the signal strength measuring device 3001 By checking, the radio field strength can be known. The radio field intensity measuring device of the present invention is from a long distance. When it is possible to measure weak radio waves and the ambient light is very strong, such as under sunlight. However, it has excellent visibility. Therefore, even in the radio field intensity detector shown in FIG. 29 (a), the operator Can measure weak radio waves from long distances, and the ambient light is very strong, such as under sunlight. Even at any time, one with excellent visibility can be used.</p><p num="0202">FIG. 30A is an example of the state of the finished product of the radio field intensity detector according to the present invention. Seal 31 On 00, along with a warning mark 3101 that prohibits the use of devices that emit radio waves, the radio wave strength A measuring device 3102 is formed. Such a seal 3100 is, for example, in FIG. 30 (b). ), It is used by pasting it on the medical device 3103 in the hospital. Visitors and inpatients However, when approaching without turning off the power of the device that emits radio waves in possession, the radio wave intensity measuring device 310 The color of 2 changes, visually warning the danger and prompting you to turn off the device that emits radio waves. The radio wave intensity measuring device of the present invention can measure weak radio waves from a long distance and is capable of measuring sunlight. It has excellent visibility even when the ambient light is very strong, such as underneath. Therefore, Fig. 30 (a) ), The visitor and inpatient measure weak radio waves from a long distance. Excellent visibility even when the ambient light is very strong, such as under sunlight. Can be used.</p><p num="0203">FIG. 31 (a) is an example of the state of the finished product of the radio field intensity detector according to the present invention. Seal 32 On 00, along with a warning mark 3201 prohibiting the use of mobile phones, the radio field intensity measuring device 3 202 is formed. Such a seal 3200 is shown, for example, in Figure 31 (b). It is used by sticking it on the strap 3203 near the priority seat in the sea urchin train. Mobile phones owned by passengers Without turning off the power of the telephone 3204, the antenna 3205 provided in the mobile phone 3204 emits radio waves. If the signal is transmitted, the color of the radio wave intensity measuring device 3202 will change in response to the radio wave, and it will be visually changed. Warn of danger and urge passengers to turn off their mobile phones. Also, pacemakers, etc. If you have or wear an item that is likely to malfunction due to radio waves, measure the radio wave strength. It is possible to detect danger from the color of the fixed device and take evacuation action from the radio wave transmission source. The present invention The radio wave intensity measuring device can measure weak radio waves from a long distance, and can be used in sunlight, etc. Excellent visibility even when the ambient light is very strong. Therefore, the electricity shown in Fig. 31 (a) Even with the wave intensity detector, passengers can measure weak radio waves from long distances, and Even when the ambient light is very strong, such as under sunlight, it is possible to use something with excellent visibility. Therefore, it functions as a security device for public institutions.</p><p num="0204">FIG. 32 (a) is an example of the state of the finished product of the radio field intensity detector according to the present invention. Warning light 33 A warning mark 3301 having a built-in radio field intensity measuring device according to the present invention is formed on 00. There is. Such warning lights are used in airplane 3302, for example, as shown in Figure 32 (b). To do. Specifically, as shown in Fig. 32 (c), it will be installed as a warning light above the seat 3303. When the plane takes off and landing, the flight attendants check the warning light, and if there is a radio wave source in the vicinity, passengers Can call attention to. The radio wave intensity measuring device of the present invention measures weak radio waves from a long distance. Excellent visibility even when the ambient light is very strong, such as under sunlight. There is. Therefore, even in the radio field intensity detector shown in Fig. 32 (a), the cabin crew can use it from a long distance. When it is possible to measure weak radio waves and the ambient light is very strong, such as under sunlight. However, one having excellent visibility can be used.</p><p num="0205">FIG. 33 (a) is an example of the state of the finished product of the radio field intensity detector according to the present invention. Warning light 34 A warning mark 3401 incorporating the radio field intensity measuring device according to the present invention is formed on 00. There is. Such a warning light is assembled in an electromagnetic cooker 3402 as shown in FIG. 33 (b), for example. Expected. The warning light is when the electromagnetic cooker 3402 breaks and outputs dangerous electromagnetic waves to the surroundings. Change the color to inform the surroundings of danger. The radio field intensity measuring device of the present invention is a weak electric wave from a long distance. Visibility can be measured even when the ambient light is very strong, such as under sunlight. Is excellent. Therefore, even in the radio field intensity detector shown in FIG. 33 (a), the user can use the long distance. When it is possible to measure weak radio waves from the sun and the ambient light is very strong, such as under sunlight. However, one having excellent visibility can be used.</p><p num="0206">FIG. 34 (a) is an example of the state of the finished product of the radio field intensity detector according to the present invention. Display 34 On 05, a warning mark 3406 having a built-in radio field intensity measuring device according to the present invention is formed. There is. Such a display unit is assembled in a microwave oven 3407 as shown in FIG. 34 (b), for example. Expected. The warning light is when the microwave oven 3407 breaks and emits dangerous electromagnetic waves to the surroundings. Change the color to inform the surroundings of danger. The radio field intensity measuring device of the present invention is a weak electric wave from a long distance. Visibility can be measured even when the ambient light is very strong, such as under sunlight. Is excellent. Therefore, even in the radio field intensity detector shown in FIG. 34 (a), the user can use the long distance. When it is possible to measure weak radio waves from the sun and the ambient light is very strong, such as under sunlight. However, one having excellent visibility can be used.</p><p num="0207">FIG. 35 (a) is an example of the state of the finished product of the radio field intensity detector according to the present invention. Seal 35 A radio field intensity measuring device 3501 is formed on 00. Such a seal 3500 For example, it is mounted on the computer 3502 and used as shown in Fig. 35 (b). Compilation The user of the tutor changes the color of the radio wave intensity measuring device 3501 by checking the strength of the radio wave level of wireless communication. It can be known from the conversion. The radio wave intensity measuring device of the present invention measures weak radio waves from a long distance. Excellent visibility even when the ambient light is very strong, such as under sunlight. To. Therefore, even in the radio field intensity detector shown in Fig. 35 (a), the user is weak from a long distance. Even when the ambient light is very strong, such as under sunlight, it is possible to measure radio waves. Those with excellent recognition can be used.</p><p num="0208">FIG. 36 (a) is an example of the state of the finished product of the radio field intensity detector according to the present invention. Board 3600 A radio field intensity measuring device 3601 is formed on the top. Such a board 3600, for example As shown in Fig. 36 (b), it is used by attaching it to the inner wall of the radio wave measurement room 3602. Antenna setting The meter technician uses the computer 3603 to transmit radio waves through the antenna 3604 to generate radio waves. By checking the color change of the inner wall of the wave measurement room 3602, the distribution of radio field intensity can be visually observed. , The performance of the antenna 3604 can be measured. The radio field intensity measuring device of the present invention is from a long distance. When it is possible to measure weak radio waves and the ambient light is very strong, such as under sunlight. However, it has excellent visibility. Therefore, even in the radio field intensity detector shown in Fig. 36 (a), the user Can measure weak radio waves from long distances, and the ambient light is very strong, such as under sunlight. Even at any time, one with excellent visibility can be used.</p><p num="0209">As described above, if the radio field intensity detector of the present invention is one that wants to detect the radio wave level (including living things), It can be installed and used in anything.</p><p num="0210">The present embodiment can be freely combined with other embodiments and examples of the present invention. That is, the radio wave intensity detector provided with the radio wave intensity measuring device of the present invention has a weak electric wave from a long distance. Visibility can be measured even when the ambient light is very strong, such as under sunlight. Can be excellent.</p>
<p num="0211">In this embodiment, the use of the radio field intensity detector of the present invention will be described. Radio field intensity measurement of the present invention The radio wave intensity detector equipped with the device is used as a so-called amusement device that colors radio waves. be able to.</p><p num="0212">In this embodiment, with reference to FIG. 37, an application example of the present invention and an example of a product to which the present invention is attached are shown. I will explain.</p><p num="0213">FIG. 37 (a) is an example of the state of the finished product of the radio field intensity detector according to the present invention. Board 3700 A radio field intensity measuring device 3701 is formed on the top. In addition, as a board 3700, a thin plastic Using a stick plate, the transistors that make up the radio field intensity measuring device are made of the thin-film plastic. By forming it on a plate, it can be processed into a curved surface.</p><p num="0214">The amusement machine of this embodiment is obtained by combining a plurality of plates 3700 shown in FIG. 37 (a) in FIG. As shown in 7 (b), it is used as a plate-shaped radio field intensity detector 3710, which is about the height of a human being. Yu The user 3702 swings the stick 3704 equipped with the radio oscillator 3703. Send radio waves and enjoy the color change of the plate-shaped radio wave intensity detector 3710.</p><p num="0215">In addition, the user can transmit radio waves by using the accelerometer built into the stick 3704. Combines the sensors of the piezoelectric sensor including the microphone etc., and the movement of the user 3702 By interlocking with, entertainment can be enhanced. In Fig. 37 (b), radio waves are emitted. The stick 3704 is shown as a member equipped with a credit device, but it is limited to the stick shape. It suffices if it can be operated in conjunction with the movement of the body, not something.</p><p num="0216">In this embodiment, the shape of the plate-shaped radio wave intensity detector 3710 has been described as a flat plate. As another shape, a spherical shape or an uneven surface shape may be used to enjoy the change in color. Also , A game device configuration that is visually rich in variety in combination with a liquid crystal display device or a light emitting device You may.</p><p num="0217">As described above, the radio wave intensity measuring device of the present invention wants to detect the radio wave level of wireless communication (including living things). Anything can be installed and used.</p><p num="0218">The present embodiment can be freely combined with other embodiments and examples of the present invention. That is, the radio wave intensity detector provided with the radio wave intensity measuring device of the present invention has a weak electric wave from a long distance. Visibility can be measured even when the ambient light is very strong, such as under sunlight. Can be considered excellent.</p>
0219100 Radio field strength measuring device 110 antenna 111 Rectifier circuit 112 Control circuit 113 Battery 114 amplifier circuit 115 Display element 120 signal processing circuit 301 Radio source 302 Received radio waves 401 board 402 Signal processing circuit 403 antenna 503 diode 504 diode 505 condenser 601 Voltage comparison circuit 602 switch 603 switch 604 diode 605 diode 701 resistor 702 resistor 703 resistance 704 resistor 705 Comparator 706 buffer 707 buffer 801 board 810 antenna 811 Signal processing circuit 812 battery 813 Display element 820 connection terminal 821 connection terminal 901 antenna coil 902 Capacitor 1001 First waveform 1002 Second waveform 1010 1st signal 1011 Second signal 1012 Third signal 1020 Pre-rectified waveform 1030 Charging period 1031 Discharge period 1201 first waveform 1202 second waveform 1203 Third waveform 1220 Pre-rectified waveform 1221 Weak radio period 1222 Strong radio wave period 1223 Minimum operating voltage 1301 board 1302 Insulation film 1303 release layer 1304 insulating film 1305 Semiconductor film 1306 Gate insulating film 1307 gate electrode 1308 Impurity region 1309 Impurity region 1310 Insulation film 1311 Impurity region 1313 Conductive 1314 Insulation film 1316 Conductive 1317 Conductive 1318 Insulation film 1319 Element forming layer 1320 Sheet material 1321 Sheet material 1337 resin 1338 Conductive particles 1381 Negative electrode active material layer 1382 Solid electrolyte layer 1383 Positive electrode active material layer 1384 Current collector thin film 1385 Interlayer film 1386 Wiring layer 1389 rechargeable battery 2000 transparent board 2001 shading board 2002 liquid crystal molecule 2003 Incident light 2004 reflected light 2100 carbonate group 2101 Cholesteryl group 2102 Oleyl alcohol 2103 Benzoate group 2104 nonanoate group 2201 shading board 2202 Underlayer 2204 interlayer insulating film 2205 Insulation film 2206 Contact opening 2207 Contact opening 2210 spacer 2211 Thermochromic material 2212 Thermochromic material 2214 Transparent substrate 2220 Sealing material 2229 Resistor heating element 2230 Incident light 2231 Reflected light 2300 semiconductor substrate 2302 Insulation film 2304 area 2306 area 2307 p well 2332 Insulation film 2336 Conductive 2338 Conductive 2340 Gate electrode 2342 Gate electrode 2348 resist mask 2350 channel formation region 2352 Impurity region 2366 resist mask 2368 Channel formation region 2370 Impurity region 2372 Insulation film 2374 wiring 2391 Negative electrode active material layer 2392 Solid electrolyte layer 2393 Positive electrode active material layer 2394 Current collector thin film 2395 Wiring layer 2396 interlayer film 2397 Wiring 2500 display element 2501 shading board 2502 resistance heating element 2503 Thermochromic material 2504 transparent substrate 2510 Connection terminal 2511 Connection terminal 2600 board 2602 Insulation film 2604 Insulation film 2606 resist mask 2608 recess 2610 Insulation film 2611 Insulating film 2612 area 2613 area 2614 area 2615 p well 2632 Insulation film 2634 Insulation film 2636 Conductive 2638 Conductive 2640 Conductive 2642 Conductive 2654 sidewall 2656 Channel formation region 2658 Impurity region 2660 Low concentration impurity region 2662 Channel formation region 2664 Impurity region 2666 Low concentration impurity region 2677 Insulation film 2678 opening 2680 Conductive 2691 Negative electrode active material layer 2692 Solid electrolyte layer 2693 Positive electrode active material layer 2694 Current collector thin film 2695 Wiring layer 2696 interlayer film 2697 Wiring 3000 management badge 3001 Radio field strength measuring device 3002 ID 3003 photo 3004 work clothes 3100 seal 3101 Warning mark 3102 Radio field strength measuring device 3103 Medical equipment 3200 seal 3201 Warning mark 3202 Radio field strength measuring device 3203 Strap 3204 mobile phone 3205 antenna 3300 Warning light 3301 Warning mark 3302 airplane 3303 seats 3400 Warning light 3401 Warning mark 3402 electromagnetic cooker 3405 Display 3406 Warning mark 3407 Microwave 3500 seal 3501 Radio field strength measuring device 3502 computer 3600 board 3601 Radio field strength measuring device 3602 radio wave measurement room 3603 computer 3604 antenna 3700 board 3701 Radio field strength measuring device 3702 user 3703 radio oscillator 3704 stick 3710 Plate-shaped radio field intensity detector 3800 Radio field strength measuring device 3810 antenna 3811 Rectifier circuit 3812 lamp 3820 Received radio wave 1300a thin film transistor 1300b thin film transistor 1300c thin film transistor 1300e thin film transistor 1305a Semiconductor film 1305c Semiconductor film 1307a Conductive 1307b Conductive 1312a Insulating film 1312b Insulation film 1315a Conductive 1331a Conductive 1332a opening 1334a Conductive 1334b Conductive 1336a Conductive 1336b Conductive 2203a wiring 2203b wiring 2682a Conductive 2682d Conductive
38 sheets
Sheet 1 Sheet 2 Sheet 3 Sheet 4 Sheet 5 Sheet 6 Sheet 7 Sheet 8 Sheet 9 Sheet 10 Sheet 11 Sheet 12 Sheet 13 Sheet 14 Sheet 15 Sheet 16 Sheet 17 Sheet 18 Sheet 19 Sheet 20 Sheet 21 Sheet 22 Sheet 23 Sheet 24 Sheet 25 Sheet 26 Sheet 27 Sheet 28 Sheet 29 Sheet 30 Sheet 31 Sheet 32 Sheet 33 Sheet 34 Sheet 35 Sheet 36 Sheet 37 Sheet 38
Every citation, both ways
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37 members in 4 offices
Priority claims2
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| 2006309996 | Japan | – | |
| 2006309996 | Japan | A |
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| CN101183127B | China | B | |
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| CN102520261A | China | A | |
| US2012229097A1 | United States of America | A1 | |
| US8330607B2 | United States of America | B2 | |
| US2013106663A1 | United States of America | A1 | |
| JP2013257344A | Japan | A | |
| EP1962408A3 | European Patent Office (EPO) | A3 | |
| JP5427351B2 | Japan | B2 | |
| EP1962408B1 | European Patent Office (EPO) | B1 | |
| JP5771659B2This record | Japan | B2 | |
| US9176176B2 | United States of America | B2 | |
| JP2015200669A | Japan | A | |
| CN102520261B | China | B | |
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Numbers
- Publication
- 5771659
- Application
- 191954
Titles2
- Japanese
- 装置
- English
- apparatus
Classification
- CPC, 13
- G01R29/0857
- H01Q1/248
- H01Q1/28
- H01Q1/38
- H04B1/1607
- G01R29/0878
- H02J50/20
- H02J50/005
- Y02P70/50
- H02J50/10
- H02J7/80
- G01R27/32
- G01R29/08
- IPC, 4
- G01R29 08
- H04B1 16
- H10D84 00
- H10D84 03
