JP5758317B2

Methods for making oxidation resistant polymeric material

Abstract

This record has no abstract on file.

JP5758317B2, drawing sheet 1
Sheet 1 of 7

Term

Projected expiry 30 January 2032.

  1. Priority
  2. Filed
  3. Granted
  4. Today
  5. Projected expiry

21 claims: 3 independent, 18 dependent

  1. 1
    For medical implants, A wear-resistant non-oxidizing cross-linked ultra-high molecular weight polyethylene (UHMWPE) mixture containing detectable residual radicals, according to the following steps:a) The UHMWPE substance is mixed with α-tocopherol (vitamin E), b) the UHMWPE mixture obtained in a) above is solidified, and c) the solidified UHMWPE mixture at a temperature lower than the melting point of the UHMWPE mixture from room temperature. D) From room temperature to a temperature below the melting point of the UHMWPE mixture Below a range of temperatures In, the heated solidified UHMWPE mixture is irradiated with ionizing radiation having a radiation dose of 50 kGy to 1,000 kGy to form a wear-resistant non-oxidizing crosslinked UHMWPE mixture containing detectable residual radicals, and e) step. Before and after the irradiation with d), the solidified UHMWPE mixture is machined so that α-tocopherol (vitamin E) is leached out of the UHMWPE mixture. Prevent, A wear-resistant non-oxidizing cross-linked UHMWPE mixture, which is obtained by a method comprising forming a wear-resistant non-oxidizing cross-linked UHMWPE mixture containing detectable residual radicals.
  2. 16
    For medical implants, A wear-resistant non-oxidizing cross-linked ultra-high molecular weight polyethylene (UHMWPE) mixture containing detectable residual radicals, according to the following steps:a) Solidify a UHMWPE mixture consisting of a mixture of UHMWPE substances containing one or more α-tocopherols (vitamin E), b) heat the solidified UHMWPE mixture from room temperature below the melting point of the UHMWPE mixture. C) From room temperature to a temperature below the melting point of the UHMWPE mixture. Below a range of temperatures In, the heated solidified UHMWPE mixture is irradiated with ionizing radiation having a radiation dose of 50 kGy to 1,000 kGy to form a wear-resistant non-oxidizing crosslinked UHMWPE mixture containing detectable residual radicals, and d) step. Before and after irradiation with c), the solidified UHMWPE mixture is machined so that α-tocopherol (vitamin E) is leached out of the UHMWPE mixture. Prevent, A wear-resistant non-oxidizing cross-linked UHMWPE mixture, which is obtained by a method comprising forming a wear-resistant non-oxidizing cross-linked UHMWPE mixture containing detectable residual radicals.
  3. 19
    For medical implants, A wear-resistant non-oxidizing cross-linked ultra-high molecular weight polyethylene (UHMWPE) mixture containing detectable residual radicals, according to the following steps:a) A solidified mixture of UHMWPE substances containing one or more α-tocopherols (vitamin E) is heated from room temperature to a temperature lower than the melting point of the UHMWPE mixture, and b) from room temperature to a temperature lower than the melting point of the UHMWPE mixture. For up to Below a range of temperatures In, the heated solidified UHMWPE mixture is irradiated with ionizing radiation having a radiation dose of 50 kGy to 1,000 kGy to form a wear-resistant non-oxidizing crosslinked UHMWPE mixture containing detectable residual radicals, and c) step. Before and after irradiation with b), the solidified UHMWPE mixture is machined so that α-tocopherol (vitamin E) is leached out of the UHMWPE mixture. Prevent, A wear-resistant non-oxidizing cross-linked UHMWPE mixture, which is obtained by a method comprising forming a wear-resistant non-oxidizing cross-linked UHMWPE mixture containing detectable residual radicals.