Micromachined piezoelectric x-axis gyroscope
26 claims: 8 independent, 18 dependent
- 1ほぼ第1の平面内に延設する基材、 前記基材上の第1の軸にほぼ沿って形成された第1の複数の電極、 前記基材上の第2の軸にほぼ沿って形成された第2の複数の電極、 前記基材に取り付けられた第1のアンカー、 前記第1のアンカーに取り付けられ、ほぼ第2の平面内に延設し、前記第2の軸に沿った運動にほぼ制約されるフレーム 、 前記フレームに取り付けられ、ほぼ前記第2の平面内に延設するプルーフマスであって、前記プルーフマスが、前記第1の軸に沿って延設する第1の複数のスロット及び前記第2の軸に沿って延設する第2の複数のスロットを有し、前記プルーフマスが、前記第1の軸及び前記第二の軸に沿った運動にほぼ制約されるプルーフマス 、並びに、 前記プルーフマスを前記フレームに結合する少なくとも2対の第1の屈曲部であって、前記第1の屈曲部が互いに平行であり、前記第1の屈曲部の第1の対が前記第1のアンカーの第1の側部に配置され、前記第1の屈曲部の第2の対が前記第1のアンカーの第2の側部に配置され、前記第1の屈曲部が、前記プルーフマスが前記フレームに前記第1の軸に沿った運動を発生させることなく前記第1の軸に沿って運動することを可能とする、第1の屈曲部 を備え、 前記第1の軸に沿って印加された横方向加速度に応答する前記プルーフマスの横方向の運動によって、前記第2の複数の電極において静電容量の第1の変化が発生し、 前記第2の軸に沿って印加された横方向加速度に応答する前記プルーフマスの横方向の運動によって、前記第1の複数の電極において静電容量の第2の変化が発生し、 前記第1及び第2の複数の電極が、前記第1の平面と前記第2の平面との間に配設された第3の平面内に実質的に形成され、前記第3の平面が、ギャップによって前記第2の平面から離隔された、加速度計。
- 2前記フレームを前記第1のアンカーに結合する第2の屈曲部をさらに備え、前記第2の屈曲部によって、前記プルーフマスおよび前記フレームが、前記第2の軸に沿って共に運動することが可能となる、 請求項1 に記載の加速度計。
- 3前記フレームが、前記第1のアンカーを取り囲み、前記プルーフマスが、前記フレームを取り囲む、 請求項1または2 に記載の加速度計。
- 41つまたは複数のスロットが、前記プルーフマスを完全に貫通して延設する、 請求項1から3 のいずれか一項に記載の加速度計。
- 51つまたは複数のスロットが、前記プルーフマスを部分的にのみ貫通して延設する、 請求項1から4 のいずれか一項に記載の加速度計。
- 6前記フレームが、前記第1の軸に沿って延設する第3の複数のスロットを含む、 請求項1から5 のいずれか一項に記載の加速度計。
- 7前記プルーフマスおよび前記フレームの少なくとも1つが、少なくとも一部が、金属から形成される、 請求項1から6 のいずれか一項に記載の加速度計。
- 8前記フレームが、前記第1のアンカーに結合された第1の部分を含み、前記第1の部分が、前記第1のアンカーに近接する応力分離スリットを有する、 請求項1から7 のいずれか一項に記載の加速度計。
- 9前記プルーフマスに結合された追加質量並びに、 前記基材上の第3の電極及び第4の電極をさらに備え、 前記追加質量と前記第3及び第4の電極との間の静電容量が、前記プルーフマスに印加された法線加速度に応答して変化する、 請求項1から8 のいずれか一項に記載の加速度計。
- 10前記基材上に形成された第2のアンカー、 前記第2のアンカーに取り付けられた屈曲部であって、前記屈曲部及び前記第2のアンカーがピボットを形成する、屈曲部、 前記基材上に形成された第3の電極、 前記基材上に形成された第4の電極、並びに、 前記第3の電極に近接する第1の側面及び前記第4の電極に近接する第2の側面を有する第2のプルーフマスであって、前記第2のプルーフマスが、前記ピボットに隣接して配設され、前記第2のプルーフマスが、前記ピボットに結合され、前記ピボットの周りで回転するように構成され、前記回転によって前記第3の電極における静電容量の第3の変化及び前記第4の電極における静電容量の第4の変化が発生する、第2のプルーフマスをさらに含む、 請求項1から9 のいずれか一項に記載の加速度計。
- 11前記プルーフマスの重心が、前記ピボットから実質的にオフセットしている、 請求項10 に記載の加速度計。
- 12前記第2のプルーフマスが、前記第2のアンカーに結合された第1の部分を含み、前記第1の部分が、前記第2のアンカーに近接する応力分離スリットを有する、 請求項10 に記載の加速度計。
- 13前記第2のプルーフマスが、ねじり屈曲部を介して前記第1の部分に結合される第2の部分を含む、 請求項12 に記載の加速度計。
- 14前記ねじり屈曲部が、前記応力分離スリットに対してほぼ垂直である、 請求項13 に記載の加速度計。
- 15ほぼ第1の平面内に延設する基材手段、 前記基材上の第1の軸にほぼ沿って形成された第1の電極手段、 前記基材上の第2の軸にほぼ沿って形成された第2の電極手段、 前記基材手段に取り付けられた第1のアンカー手段、 前記第1のアンカー手段に取り付けられ、ほぼ第2の平面内に延設し、前記第2の軸に沿った運動にほぼ制約されるフレーム手段 、 前記フレーム手段に取り付けられ、ほぼ前記第2の平面内に延設し、前記第1の軸及び前記第2の軸に沿った運動にほぼ制約されるプルーフマス手段、 及び、 前記プルーフマス手段を前記フレーム手段に結合する少なくとも2対の第1の屈曲部手段であって、前記第1の屈曲部手段が互いに平行であり、前記第1の屈曲部手段の第1の対が前記第1のアンカー手段の第1の側部に配置され、前記第1の屈曲部手段の第2の対が前記第1のアンカー手段の第2の側部に配置され、前記第1の屈曲部手段が、前記プルーフマス手段が前記フレーム手段に前記第1の軸に沿った運動を発生させることなく前記第1の軸に沿って運動することを可能とする、第1の屈曲部手段 を備え、 前記第1の軸に沿って印加された横方向加速度に応答する前記プルーフマス手段の横方向の運動によって、前記第2の電極手段における静電容量の第1の変化が発生し、 前記第2の軸に沿って印加された横方向加速度に応答する前記プルーフマス手段の横方向の運動によって、前記第1の電極手段における静電容量の第2の変化が発生し、 前記第1及び第2の複数の電極手段が、前記第1の平面と前記第2の平面との間に配設された第3の平面内に実質的に形成され、前記第3の平面が、ギャップによって前記第2の平面から離隔された、加速度計。
- 16前記プルーフマス手段及び前記フレーム手段が、前記第2の軸に沿って共に運動することを可能にする第2の屈曲部手段をさらに備える、 請求項15 に記載の加速度計。
- 17加速度計を製造する方法であって、 ほぼ第1の平面内に延設する基材上に、以下の、 第1の軸にほぼ沿った第1の複数の電極、 第2の軸にほぼ沿った第2の複数の電極、及び、 第1のアンカー、 を形成する段階、並びに、 ほぼ前記第2の平面内に延設するフレーム及びプルーフマスを形成する段階であって、前記第1及び第2の複数の電極が、前記第1の平面と前記第2の平面との間に配設された第3の平面内に実質的に形成され、前記第3の平面が、ギャップによって前記第2の平面から離隔され、前記プルーフマスを形成するプロセスが、 前記第1の軸にほぼ沿って延設する前記プルーフマス内に第1の複数のスロットを形成する段階、及び、 前記第2の軸にほぼ沿って延設する前記プルーフマス内に第2の複数のスロットを形成する段階を含み、 前記フレームを形成するプロセスが、 前記プルーフマスを前記フレームに取り付け、前記プルーフマスが、前記フレームの前記第1の軸に沿った運動を発生させることなく前記第1の軸にほぼ沿って運動することを可能にするように構成された 少なくとも2対の 第1の屈曲部を形成する段階 であって、前記第1の屈曲部が互いに平行であり、前記第1の屈曲部の第1の対が前記第1のアンカーの第1の側部に配置され、前記第1の屈曲部の第2の対が前記第1のアンカーの第2の側部に配置されるようにする段階 、並びに 前記フレームを前記第1のアンカーに取り付けるように構成され、前記フレームを、前記第2の軸に沿って動くようにほぼ制約するように構成され、前記プルーフマス及び前記フレームが前記第2の軸に沿って共に運動することを可能にするように構成された、第2の屈曲部を形成する段階を伴う、フレーム及びプルーフマスを形成する段階を備える、加速度計を製造する方法。
- 18前記第1及び第2の複数の電極を前記基材上に形成するプロセスが、前記第1及び第2の複数の電極を前記基材上に成膜する段階を含む、 請求項17 に記載の方法。
- 19前記プルーフマスを形成するプロセスが、電気メッキプロセスを伴う、 請求項17または18 に記載の方法。
- 20前記フレームを形成するプロセスが、前記第1のアンカーの周囲に前記フレームを形成する段階を伴う、 請求項17から19 のいずれか一項に記載の方法。
- 21前記プルーフマスを形成するプロセスが、前記フレームの周囲に前記プルーフマスを形成する段階を伴う、 請求項17から20 のいずれか一項に記載の方法。
- 22前記プルーフマスを形成するプロセスが、前記プルーフマスを少なくとも部分的に貫通する1つまたは複数のスロットを形成する段階を伴う、 請求項17から21 のいずれか一項に記載の方法。
- 23前記フレームを形成するプロセスが、前記フレーム内であって前記第1の軸に沿って延設する第3の複数のスロットを形成する段階を伴う、 請求項17から22 のいずれか一項に記載の方法。
- 24前記フレームを形成するプロセスが、 前記第1のアンカーに結合された第1の部分を形成する段階、及び 前記第1のアンカーに近接する前記第1の部分に応力分離スリットを形成する段階を伴う、 請求項17から23 のいずれか一項に記載の方法。
- 25前記基材上に複数の加速度計の特徴を部分的に形成する段階、及び 構造が部分的に形成された後に前記基材をサブパネルに分割する段階をさらに備え、 前記電気メッキプロセスが、前記サブパネルを用いて実施される、 請求項19 に記載の方法。
- 26前記特徴を部分的に形成する段階が、成膜プロセス、パターン形成プロセス及びエッチングプロセスを伴う、 請求項25 に記載の方法。
Independent claims26
218 paragraphs, as filed
Cross-reference of related applications This application is prioritized by US Provisional Patent Application No. 61 / 343,598, named "MICROMACHINED PIEZOELECTRIC X-AXIS GYROSCOPE" (reference number QUALP030P / 101702P1), which was filed on April 30, 2010 and assigned to the assignee. It claims the right. This application is prioritized by US Provisional Patent Application No. 61 / 343,599, which was filed on April 30, 2010 and assigned to the assignee, with the name "MICROMACHINED PIEZOELECTRIC Z-AXIS GYROSCOPE" (reference number QUALP031P / 101703P1). Also claim the right. This application was filed on April 30, 2010 and was assigned to the assignee US Provisional Patent Application No. 61 / 343,601, named "STACKED LATERAL OVERLAB TRANSDUCER (SLOT) BASED 3-AXIS MEMS It also claims the priority of "ACCELEROMETER" (reference number QUALP032P / 101704P1). This application was filed on April 30, 2010 and was assigned to the assignee US Provisional Patent Application No. 61 / 343,600, named "MICROMACHINED PIEZOELECTRIC X-AXIS & Z-AXIS GYROSCOPE AND STACKED LATERAL OVERLAP TRANSDUCER ( SLOT) BASED 3-AXIS MEMS ACCELEROMETER (reference number QUALP034P / 101704P2) also claims priority. This application was filed on December 30, 2010 and was assigned to the assignee US Patent Application No. 12 / 930,187, named "STACKED LATERAL OVERLAP TRANSDUCER (SLOT) BASED 3-AXIS MEMS ACCELEROMETER" (reference number). It also claims the priority of QUALP032 / 101704U1). The disclosures of these previous applications are considered part of this disclosure and are incorporated by reference into this disclosure.
The present disclosure relates to electromechanical systems, and more specifically to multi-axis gyroscopes and accelerometers.
Electromechanical systems include devices with electrical and mechanical elements, actuators, transducers, sensors, optical components (eg, mirrors), and electronics. Electromechanical systems can be manufactured on a variety of scales, including, but not limited to, microscales and nanoscales. For example, a microelectromechanical system (MEMS) device can include a structure having a size in the range of about 1 micron to several hundreds of microns or more. Nanoelectromechanical systems (NEMS) devices can include structures having a size of less than 1 micron, including, for example, less than a few hundred nanometers. Electromechanical elements are other micromachining processes that remove or add layers to form electrical and electromechanical devices by filming, etching, lithography, and / or etching to remove a portion of the substrate and / or film layer. Can be manufactured using.
One type of electromechanical system device is called an interference modulator (IMOD). As used herein, the term interferometric or interferometric light modulator refers to a device that selectively absorbs and / or reflects light using the principle of optical interference. In some implementations, the interferometric modulator comprises a pair of conduction plates, one or both of which are all or partly transparent and / or reflective and relative to the appropriate electrical signal applied. Can exercise. In one implementation, one plate may contain a fixed layer deposited on the substrate and the other plate may contain a reflective film separated from the fixed layer by an air gap. The relative position of one plate with respect to the other plate can change the optical interference of light incident on the interference modulator. Interference modulator devices have a wide range of applications and are expected to be used in improving existing products and creating new products, especially those with display capabilities.
<p num="0005"> In recent years, great interest has been focused on the manufacture of small gyroscopes and accelerometers. For example, some gyroscopes and / or accelerometers are built into mobile devices such as portable display devices. Although such gyroscopes and accelerometers are satisfactory in some respects, it would be desirable to implement improved compact gyroscopes and accelerometers.</p>
<p num="0006"> The systems, methods, and devices of the present disclosure each have a plurality of innovative aspects, none of which is solely involved in the desired attributes disclosed herein.</p><p num="0007"> One innovative aspect of the subject of the invention described in the present disclosure includes a substrate, a first plurality of electrodes, a second plurality of electrodes, a first anchor attached to the substrate, a frame and a proof mass. It can be implemented with an accelerometer. The substrate can extend substantially in the first plane. The first plurality of electrodes may be formed substantially along the first axis on the substrate, and the second plurality of electrodes may be formed substantially along the second axis on the substrate. ..</p><p num="0008"> The frame can be attached to the first anchor and extend substantially in the second plane. The frame can be substantially constrained by movement along the second axis.</p><p num="0009"> The proof mass can be attached to the frame and extend substantially in the second plane. The proof mass may have a first plurality of slots extending along the first axis and a second plurality of slots extending along the second axis. The proof mass can be substantially constrained by movement along the first and second axes.</p><p num="0010"> The lateral movement of the proof mass in response to the lateral acceleration applied along the first axis can cause a first change in capacitance at the second plurality of electrodes. The lateral movement of the proof mass in response to the lateral acceleration applied along the second axis can cause a second change in capacitance at the first plurality of electrodes.</p><p num="0011"> The accelerometer may also include a first bend that connects the proof mass to the frame. The first bend may allow the proof mass to move along the first axis without causing the frame to move along the first axis. The accelerometer may also include a second bend that connects the frame to the first anchor. The second bend may allow the proof mass and the frame to move together along the second axis.</p><p num="0012"> The frame may surround the first anchor. The proof mass may surround the frame. The one or more of the slots may extend completely through the proof mass. Alternatively or additionally, the slot may extend only partially through the proof mass. The frame may include a third plurality of slots extending along the first axis. The proof mass and / or the frame may be at least partially formed of metal.</p><p num="0013"> The frame may include a first portion coupled to the first anchor. The first portion may have a stress separation slit in close proximity to the first anchor.</p><p num="0014"> The accelerometer may also include an additional mass coupled to the proof mass, a third electrode and a fourth electrode on the substrate. The capacitance between the additional mass and the third and fourth electrodes can change in response to the normal acceleration applied to the proof mass.</p><p num="0015"> The accelerometer may also include a second anchor formed on the substrate and a bend attached to the second anchor. The bend and the second anchor can form a pivot. The accelerometer may also include a third electrode formed on the substrate, a fourth electrode formed on the substrate and a second proof mass. The second proof mass may have a first side surface close to the third electrode and a second side surface close to the fourth electrode. The second proof mass may be disposed adjacent to the pivot. The second proof mass may be coupled to the pivot and configured to rotate around the pivot. Such rotation can cause a third change in capacitance at the third electrode and a fourth change in capacitance at the fourth electrode.</p><p num="0016"> The center of gravity of the proof mass can be substantially offset from the pivot. The second proof mass may include a first portion coupled to the second anchor. The first portion may have a stress separation slit in close proximity to the second anchor. The proof mass may include a second portion coupled to the first portion via a torsionally bent portion. The torsionally bent portion may be substantially perpendicular to the stress separation slit.</p><p num="0017"> Methods for making accelerometers are also provided herein. Some such methods involve forming a first plurality of electrodes, a second plurality of electrodes, and a first anchor on a substrate extending substantially in the first plane. The first plurality of electrodes may be formed substantially along the first axis, and the second plurality of electrodes may be formed substantially along the second axis. The step of forming the first and second plurality of electrodes on the base material may involve the step of forming the first and second plurality of electrodes on the base material.</p><p num="0018"> Such a method may also involve the step of forming a frame and proof mass extending substantially in the second plane. The process of forming the proof mass is a step of forming a first plurality of slots in the proof mass extending substantially along the first axis and extending substantially along the second axis. It may include the step of forming a second plurality of slots in the proof mass. The process of forming the frame is configured to attach the proof mass to the frame so that the proof mass is substantially on the first axis without causing the frame to move along the first axis. It may involve the step of forming a first bend that allows it to move along. The process of forming the frame is also configured to attach the frame to the first anchor, substantially constraining the frame to movement along the second axis, the proof mass and said. It may involve the step of forming a second bend configured to allow the frame to move together along the second axis. The step of forming the proof mass may involve an electroplating process. The method may also involve the step of partially forming the features of the plurality of accelerometers on the substrate and the step of dividing the substrate into subpanels after the structure is partially formed. The electroplating process can be performed using the subpanel. The step of partially forming the feature may involve a film forming process, a pattern forming process and / or an etching process.</p><p num="0019"> The process of forming the frame may involve forming the frame around the first anchor. The process of forming the proof mass may involve forming the proof mass around the frame. The process of forming the proof mass may involve forming one or more slots, at least partially penetrating the proof mass.</p><p num="0020"> The process of forming the frame may also involve forming a third plurality of slots extending along the first axis in the frame. Further, the process of forming the frame is a step of forming a first portion coupled to the first anchor and a step of forming a stress separation slit in the first portion close to the first anchor. Can be accompanied by.</p><p num="0021"> In some implementations, the device may also include displays, processors and memory devices. The processor may be configured to communicate with the display and accelerometer. The processor may be configured to process image data and accelerometer data. The memory device may be configured to communicate with the processor. The device may also include an input device configured to receive the input data and transmit the input data to the processor. The device may also include a driver circuit configured to transmit at least one signal to the display. The device may also include a controller configured to transmit at least a portion of the image data to the driver circuit. The device may also include an image source module configured to transmit the image data to the processor. The image source module may include at least one of a receiving unit, a transmitting / receiving unit, and a transmitting unit.</p><p num="0022"> Details of the implementation of one or more of the objects of the invention described herein are described in the accompanying drawings and the following description. Other features, embodiments, and advantages will become apparent from the description, drawings, and claims. The relative dimensions in the figure below may not be as expected.</p><p num="0023"> 37 C. F. R. § 1.84 (a) (2) (iii) Statement: This patent or application file contains at least one drawing made in color. A copy of this patent or patent application, including color drawings, can be obtained by applying to the Patent and Trademark Office and paying the required fees.</p>
<figref num="1">FIG. 5 is an isometric view showing two adjacent pixels in a series of pixels of an interference modulator (IMOD) display device.</figref><figref num="2">It is a system block diagram example which illustrates the electronic device which incorporated the 3 × 3 interferometric modulator display.</figref><figref num="3">It is a figure example which shows the relationship between the position of the movable reflection layer with respect to the interference modulator of FIG. 1 and the applied voltage.</figref><figref num="4">It is an example of a table showing the different states of the interfer modulator when different common and segment voltages are applied.</figref><figref num="5A">It is a figure example which shows the frame of the display data in the 3 × 3 interferometric modulator display of FIG.</figref><figref num="5B">FIG. 5A is an example timing diagram for common and segment signals that can be used to write a frame of display data shown in FIG. 5A.</figref><figref num="6A">It is a partial cross-sectional view example of the interferometric modulator display of FIG.</figref><figref num="6B">It is a figure example which shows the cross section of various implementations of an interference modulator.</figref><figref num="6C">It is a figure example which shows the cross section of various implementations of an interference modulator.</figref><figref num="6D">It is a figure example which shows the cross section of various implementations of an interference modulator.</figref><figref num="6E">It is a figure example which shows the cross section of various implementations of an interference modulator.</figref><figref num="7">It is a flow diagram example which shows the manufacturing process for an interference modulator.</figref><figref num="8A">It is a schematic cross-sectional view example of various stages in the method of manufacturing an interference modulator.</figref><figref num="8B">It is a schematic cross-sectional view example of various stages in the method of manufacturing an interference modulator.</figref><figref num="8C">It is a schematic cross-sectional view example of various stages in the method of manufacturing an interference modulator.</figref><figref num="8D">It is a schematic cross-sectional view example of various stages in the method of manufacturing an interference modulator.</figref><figref num="8E">It is a schematic cross-sectional view example of various stages in the method of manufacturing an interference modulator.</figref><figref num="9A">It is a figure which shows the example of the driving and sensing mode of a single tuning fork type gyroscope.</figref><figref num="9B">It is a figure which shows the example of the driving and sensing mode of a single tuning fork type gyroscope.</figref><figref num="10A">It is a figure which shows the example of the gyroscope which has a proof mass suspended by a drive beam attached to a central anchor.</figref><figref num="10B">It is a figure which shows the mounting example of the gyroscope which is similar to the thing of FIG. 10A, but has a gap between drive electrodes.</figref><figref num="11A">It is a figure which shows the example of the drive mode of the mounting of the gyroscope as shown in FIG. 10A.</figref><figref num="11B">It is a figure which shows the example of the sensing mode of the implementation of the gyroscope driven as shown in FIG. 11A.</figref><figref num="12">It is a figure which shows the example of the implementation of the drive frame gyroscope in which the drive frame is attached to the central anchor via the drive beam.</figref><figref num="13A">It is a figure which shows the example of the cross section of the mounting of the gyroscope as shown in FIG.</figref><figref num="13B">It is a figure which shows the example of the enlarged pair of the drive beam of the implementation of the gyroscope shown in FIG. 13A.</figref><figref num="14A">It is a figure which shows the example of the drive mode of the implementation of the gyroscope as shown in FIG.</figref><figref num="14B">It is a figure which shows the example of the sensing mode of the implementation of the gyroscope driven as shown in FIG. 14A.</figref><figref num="15">It is a figure which shows the example of the implementation of the sensing frame gyroscope.</figref><figref num="16A">It is a figure which shows the example of the drive mode of the implementation of the gyroscope shown in FIG.</figref><figref num="16B">It is a figure which shows the example of the sensing mode of the implementation of the gyroscope driven as shown in FIG. 16A.</figref><figref num="17">It is a figure which shows the example of the implementation of the alternative sensing frame gyroscope which has a tapered sensing beam.</figref><figref num="18">A diagram showing an example of a finite element analysis superimposed on a gyroscope implementation, such as the implementation in FIG. 17, which shows a substantially uniform stress applied on a tapered sensing beam when operating in sensing mode. is there.</figref><figref num="19">It is a figure which shows the plot example of the relationship between the stress level applied to the tapered sensing beam and the distance from the center with respect to the mounting of a gyroscope such as the mounting of FIG.</figref><figref num="20A">It is a figure which shows the example of the plan view of the implementation of the z-axis gyroscope.</figref><figref num="20B">It is an enlarged view example of the drive beam of the implementation of the z-axis gyroscope shown in FIG. 20A.</figref><figref num="21A">It is a figure which shows the example of the drive mode of the implementation of the z-axis gyroscope as shown in FIG. 20A.</figref><figref num="21B">It is a figure which shows the example of the sensing mode of the implementation of the z-axis gyroscope driven as shown in FIG. 20A.</figref><figref num="22">It is an enlarged view example of one mounting of a tapered sensing beam from a z-axis gyroscope.</figref><figref num="23">It is a figure which shows the example of the electrode array which can be configured to apply a compensating electrostatic force to fine-tune the vibration mode shape of a proof mass.</figref><figref num="24">It is a figure which shows an example of the accelerometer for measuring the acceleration in a plane.</figref><figref num="25">It is a figure which shows the component of an example of an accelerometer for measuring an out-of-plane acceleration.</figref><figref num="26A">It is a figure which shows the component of an example of an accelerometer for measuring the acceleration in a plane.</figref><figref num="26B">It is a figure which shows an example of the response of the accelerometer of FIG. 26A to the acceleration along the 1st axis.</figref><figref num="26C">It is a figure which shows an example of the response of the accelerometer of FIG. 26A to the acceleration along the 2nd axis.</figref><figref num="26D">It is a figure which shows an example of the accelerometer for measuring the in-plane and out-of-plane acceleration.</figref><figref num="27">It is a figure which shows an example of the accelerometer for measuring the out-of-plane acceleration.</figref><figref num="28">It is a figure which shows an example of the implementation of the alternative accelerometer for measuring the in-plane and out-of-plane acceleration.</figref><figref num="29">It is a figure which shows an example of the implementation of another alternative accelerometer for measuring in-plane and out-of-plane acceleration.</figref><figref num="30">FIG. 6 is a graph showing the relative sensitivity made available by the various materials that can be used to form an accelerometer or gyroscope.</figref><figref num="31A">It is a figure of an example of a comb-tooth type accelerometer.</figref><figref num="31B">It is a graph which shows the performance of the comb-tooth type drive and the SLOT-based accelerometer.</figref><figref num="32">FIG. 5 is a graph showing the performance of SLOT-based accelerometers with slots of various depths, including through slots.</figref><figref num="33">FIG. 6 is an example flow diagram illustrating an overview of the steps of a method involving the use of one or more gyroscopes or accelerometers in a mobile device.</figref><figref num="34">It is a flow diagram example which shows the outline of the method of manufacturing an accelerometer.</figref><figref num="35A">It is an example of a cross-sectional view of various blocks in the process of manufacturing an accelerometer.</figref><figref num="35B">It is an example of a cross-sectional view of various blocks in the process of manufacturing an accelerometer.</figref><figref num="35C">It is an example of a cross-sectional view of various blocks in the process of manufacturing an accelerometer.</figref><figref num="36A">It is an example of a cross-sectional view of various blocks in the process of manufacturing an accelerometer.</figref><figref num="36B">It is an example of a cross-sectional view of various blocks in the process of manufacturing an accelerometer.</figref><figref num="36C">It is an example of a cross-sectional view of various blocks in the process of manufacturing an accelerometer.</figref><figref num="36D">It is an example of a cross-sectional view of various blocks in the process of manufacturing an accelerometer.</figref><figref num="37A">It is an example of a cross-sectional view of various blocks in the process of manufacturing an accelerometer.</figref><figref num="37B">It is an example of a cross-sectional view of various blocks in the process of manufacturing an accelerometer.</figref><figref num="38A">It is an example of a cross-sectional view of various blocks in the process of manufacturing an accelerometer.</figref><figref num="38B">It is an example of a cross-sectional view of various blocks in the process of manufacturing an accelerometer.</figref><figref num="38C">It is an example of a cross-sectional view of various blocks in the process of manufacturing an accelerometer.</figref><figref num="38D">It is an example of a cross-sectional view of various blocks in the process of manufacturing an accelerometer.</figref><figref num="39A">It is an example of a cross-sectional view of various blocks in the process of manufacturing an accelerometer.</figref><figref num="39B">It is an example of a cross-sectional view of various blocks in the process of manufacturing an accelerometer.</figref><figref num="40A">FIG. 6 is a cross-sectional example of various blocks in the process of forming a device including a MEMS die and an integrated circuit.</figref><figref num="40B">FIG. 6 is a cross-sectional example of various blocks in the process of forming a device including a MEMS die and an integrated circuit.</figref><figref num="40C">FIG. 6 is a cross-sectional example of various blocks in the process of forming a device including a MEMS die and an integrated circuit.</figref><figref num="41">It is a flow diagram example which shows the outline of the process of manufacturing a gyroscope and related structures.</figref><figref num="42A">Substrate, parts of the gyroscope, and some parts of the structure for packaging and electrically connecting the gyroscope at various stages of the process outlined in FIG. It is an example of a cross-sectional view passing through.</figref><figref num="42B">Substrate, parts of the gyroscope, and some parts of the structure for packaging and electrically connecting the gyroscope at various stages of the process outlined in FIG. It is an example of a cross-sectional view passing through.</figref><figref num="42C">Substrate, parts of the gyroscope, and some parts of the structure for packaging and electrically connecting the gyroscope at various stages of the process outlined in FIG. It is an example of a cross-sectional view passing through.</figref><figref num="42D">Substrate, parts of the gyroscope, and some parts of the structure for packaging and electrically connecting the gyroscope at various stages of the process outlined in FIG. It is an example of a cross-sectional view passing through.</figref><figref num="43A">Substrate, parts of the gyroscope, and some parts of the structure for packaging and electrically connecting the gyroscope at various stages of the process outlined in FIG. It is an example of a cross-sectional view passing through.</figref><figref num="43B">Substrate, parts of the gyroscope, and some parts of the structure for packaging and electrically connecting the gyroscope at various stages of the process outlined in FIG. It is an example of a cross-sectional view passing through.</figref><figref num="43C">Substrate, parts of the gyroscope, and some parts of the structure for packaging and electrically connecting the gyroscope at various stages of the process outlined in FIG. It is an example of a cross-sectional view passing through.</figref><figref num="43D">Substrate, parts of the gyroscope, and some parts of the structure for packaging and electrically connecting the gyroscope at various stages of the process outlined in FIG. It is an example of a cross-sectional view passing through.</figref><figref num="44A">Substrate, parts of the gyroscope, and some parts of the structure for packaging and electrically connecting the gyroscope at various stages of the process outlined in FIG. It is an example of a cross-sectional view passing through.</figref><figref num="44B">Substrate, parts of the gyroscope, and some parts of the structure for packaging and electrically connecting the gyroscope at various stages of the process outlined in FIG. It is an example of a cross-sectional view passing through.</figref><figref num="44C">Substrate, parts of the gyroscope, and some parts of the structure for packaging and electrically connecting the gyroscope at various stages of the process outlined in FIG. It is an example of a cross-sectional view passing through.</figref><figref num="45A">Substrate, parts of the gyroscope, and some parts of the structure for packaging and electrically connecting the gyroscope at various stages of the process outlined in FIG. It is an example of a cross-sectional view passing through.</figref><figref num="45B">Substrate, parts of the gyroscope, and some parts of the structure for packaging and electrically connecting the gyroscope at various stages of the process outlined in FIG. It is an example of a cross-sectional view passing through.</figref><figref num="46A">Substrate, parts of the gyroscope, and some parts of the structure for packaging and electrically connecting the gyroscope at various stages of the process outlined in FIG. It is an example of a cross-sectional view passing through.</figref><figref num="46B">Substrate, parts of the gyroscope, and some parts of the structure for packaging and electrically connecting the gyroscope at various stages of the process outlined in FIG. It is an example of a cross-sectional view passing through.</figref><figref num="47A">FIG. 6 is a system block diagram showing a display device including multiple interference modulators, a gyroscope, and / or an accelerometer.</figref><figref num="47B">FIG. 6 is a system block diagram showing a display device including multiple interference modulators, a gyroscope, and / or an accelerometer.</figref>
Similar reference numbers and directives in various drawings point to similar elements.
The detailed description below is intended for some implementations intended to illustrate innovative aspects. However, the teachings herein can be applied in a number of different ways. The implementation described is moving (eg, video), stationary (eg, still image), text, graphics, or image. It can be implemented on any device that is configured to display images. More specifically, these implementations are, but are not limited to, mobile phones, multimedia internet compatible mobile phones, mobile TV receivers, wireless devices, smartphones, Bluetooth devices, mobile information terminals (PDAs), wireless email reception. Machines, handheld or portable computers, netbooks, notebooks, smart books, printers, copying machines, scanners, fax machines, GPS receivers / navigators, cameras, MP3 players, camcoders, game machines, watches, clocks, calculators, TV receivers. Machines, flat panel displays, electronic reading devices (eg electronic book readers), computer monitors, automotive displays (eg mileage meter displays), cockpit controls and / or displays, camera view displays (eg automotive) Rear view camera display inside), electrophotographs, electronic signs or signs, projectors, building structures, microwave ovens, refrigerators, stereo systems, cassette recorders or players, DVD players, CD players, VCRs, radios, portable memory chips, Various such as washer, dryer, washer with dryer, parking meter, packaging (eg MEMS and non-MEMS), aesthetic structures (eg image display on jewel pieces), and various electromechanical system devices Can be implemented or associated with electronic devices. The teachings herein are, but are not limited to, electronic switching devices, radio frequency filters, sensors, accelerometers, jars. Hidden applications such as iroscopes, motion sensing devices, magnetometers, inertial components for consumer electronics, consumer electronics components, varactors, liquid crystal devices, electrophoresis devices, drive systems, manufacturing processes, and electronic test equipment. Can also be used in. Thus, the teachings are not intended to be limited to the implementations shown alone in the figure, but instead have wide applicability, as will be readily appreciated by those skilled in the art. There is.
This disclosure describes various types of inertial sensors, how to make such sensors, and how to use such sensors. For example, some implementations described herein provide an x-axis gyroscope with low orthogonality and bias error. Gyroscopes are suitable for manufacturing flat panel displays on glass. Some such implementations include a proof mass that can twist vibrate in plane (around the z-axis) in drive mode and out of plane in sensing mode. By changing its orientation in the plane, the gyroscope can function as a y-axis gyroscope. In addition, if the gyroscope is arranged in the orthogonal plane, the gyroscope can function as a z-axis gyroscope.
However, some implementations described herein implement z-axis gyroscopes that can be made and / or placed in the same plane as the x-axis and y-axis gyroscopes. The various z-axis gyroscopes described herein can also have low orthogonality and bias error. Some implementations include a drive proof mass that can be piezoelectrically driven in a nearly linear, x-direction motion (in plane). The drive proof mass can be mechanically coupled to a sensing proof mass that twists and vibrates in the presence of angular rotation around the z-axis. The motion of the sensing proof mass can induce charges within the piezoelectric membrane on the beam that connects the sensing mass to the substrate anchor. The charge can be read out and processed electronically.
Proof mass is made from a variety of materials such as thick metal plated alloys (eg nickel-manganese (Ni-Mn)), single crystal silicon from the device layer of silicon on insulator (SOI) wafers, glass, and other materials. be able to. Piezoelectric films are aluminum nitride (AlN), zinc oxide (ZnO), lead zirconate titanate (PZT), or other thin films, or single crystals such as quartz, lithium niobate, lithium tantalate, and other substances. It can be used as a material. Some implementations are suitable for manufacturing flat panel displays on glass.
The various implementations described herein include novel 3-axis accelerometers, as well as their components. Such 3-axis accelerometers have a size, performance level, and cost suitable for use in consumer electronics applications such as portable navigation devices and smartphones. Some such implementations include a capacitive stacked lateral overlap transducer (SLOT) -based 3-axis accelerometer. In some implementations, two proof masses are used to achieve the 3-axis sensing function, while in other implementations, only one proof mass is used to achieve the 3-axis sensing function. Different bend types can be optimized for each axis.
The particular implementation of the subject of the invention described in the present disclosure can be implemented to realize one or more of the following potential advantages: For example, in some such implementations, x-axis gyroscopes, z-axis gyroscopes, and / or SLOT-based 3-axis accelerometers may share layers that are deposited during the manufacturing process. By combining such processes, it is possible to enable monolithic integration of six inertial sensing axes on a single substrate, such as a single glass substrate. Many of the implementations described herein can be made on large area glass panels. Manufacturing processes that can be used to form SLOT-based 3-axis accelerometers on large area glass panels are multi-plated metals such as the x-axis, y-axis, and z-axis gyroscopes described herein. It is compatible with the process for producing piezoelectric aluminum nitride (AlN) (or other piezoelectric materials) on an axial MEMS gyroscope. Therefore, some implementations described herein involve manufacturing x-axis gyroscopes, y-axis gyroscopes, z-axis gyroscopes, and SLOT-based 3-axis accelerometers on the same glass substrate. Accompany.
An example of a suitable MEMS device to which the described implementation can be applied is a reflective display device. Reflective display devices can incorporate an interference modulator (IMOD) that selectively absorbs and / or reflects light incident on it using the principle of optical interference. The IMOD can include an absorber, a reflector that is mobile with respect to the absorber, and an optical resonant cavity defined between the absorber and the reflector. The reflector can be moved to two or more different positions where the size of the optical resonant cavity can be varied, thereby affecting the reflectance of the interferometer. The reflectance spectrum of IMOD can be shifted over the visible wavelength range to form a fairly wide spectral band capable of producing different colors. The position of the spectral band can be adjusted by changing the thickness of the optical resonant cavity, i.e. by changing the position of the reflector.
FIG. 1 is an isometric view showing two adjacent pixels in a series of pixels of an interference modulator (IMOD) display device. The IMOD display device includes one or more interfering MEMS display elements. In these devices, the MEMS pixels can be in either the bright or dark state. In the bright ("relaxed", "open", or "on") state, the display element reflects most of the incident visible light, for example, to the user. Conversely, in the dark (actuated, closed, or off) state, the display element reflects little incident visible light. In some implementations, the light reflection characteristics in the on and off states can be reversed. The MEMS pixels are configured to mainly reflect at a specific wavelength, and can be displayed in color in addition to black and white.
The IMOD display device can include an array of rows / columns of IMOD. Each IMOD is positioned at a variable and controllable distance from each other and forms an air gap (also called an optical gap or cavity), a pair of reflective layers, i.e., a movable reflective layer and a fixed portion. It can include a reflective layer. The movable reflective layer can move between at least two positions. In the first position, i.e. the relaxed position, the movable reflective layer can be positioned at a relatively large distance from the fixed partially reflective layer. In the second position, i.e. the working position, the movable reflective layer can be positioned closer to the partially reflective layer. The incident light reflected from the two layers can interfere with each other by strengthening or weakening depending on the position of the movable reflecting layer, and can cause either a total reflection or a non-reflection state for each pixel. In some implementations, the IMOD is in a reflective state when inactive and can reflect light within the visible spectrum, is in a dark state when inactive, and is out of the visible range (eg, infrared light). ) Can be reflected. However, in some other implementations, the IMOD may be in a dark state when inactive and in a reflective state when inactive. In some implementations, the introduction of an applied voltage can drive the pixels to change state. In some other implementations, the applied charge can drive the pixel to change state.
The indicated portion of the pixel array of FIG. 1 includes two adjacent interference modulators 12. In the left IMOD 12 (as shown), the movable reflective layer 14 is shown to be in a relaxed position at a predetermined distance from the optical stack 16 including the partially reflective layer. Voltage V applied to IMOD12 on the left<sub>0</sub>Is insufficient to operate the movable reflective layer 14. In the IMOD 12 on the right, the movable reflective layer 14 is shown to be in an operating position near or adjacent to the optical stack 16. Voltage V applied to IMOD12 on the right<sub>bias</sub>Is sufficient to keep the movable reflective layer 14 in the working position.
In FIG. 1, the reflection characteristics of the pixel 12 are generally indicated by the light incident on the pixel 12 and the arrow 13 indicating the light 15 reflected from the left IMOD 12. Although not shown in detail, those skilled in the art will appreciate that most of the light 13 incident on the pixel 12 passes through the transparent substrate 20 and travels towards the optical stack 16. A part of the light incident on the optical stack 16 is transmitted through the partially reflective layer of the optical stack 16, and a part is reflected back through the transparent base material 20. A portion of the light 13 that passes through the optical stack 16 is reflected by the movable reflective layer 14 and returns (through) towards the transparent substrate 20. The (strengthening or weakening) interference between the light reflected from the partially reflective layer of the optical stack 16 and the light reflected from the movable reflective layer 14 determines the wavelength of the light 15 reflected from the IMOD 12. ..
The optical stack 16 can include a single layer or multiple layers. The layer can include one or more of an electrode layer, a partially reflective / partially transmissive layer, and a transparent dielectric layer. In some implementations, the optical stack 16 is conductive, partially transmissive, and partially reflective, eg, made by depositing one or more of the above layers onto a transparent substrate 20. Can be done. The electrode layer can be formed from various metals, such as various materials such as indium tin oxide (ITO). The partially reflective layer can be formed from a variety of metals, such as chromium (Cr), semiconductors, and a variety of partially reflective materials such as dielectrics. The partially reflective layer is formed from one or more material layers, each of which can be formed from a single material or a composite material. In some implementations, the optical stack 16 can include a single translucent thickness metal or semiconductor used as both a light absorber and a conductor, but with a variety of more conductive layers. Alternatively, a portion (eg, an optical stack 16 or other structure of IMOD) can be used to carry a signal between IMOD pixels on the bus. The optical stack 16 may also include one or more insulating or dielectric layers covering one or more conductive or conductive / absorbing layers.
In some implementations, the layers of the optical stack 16 can be patterned in multiple strips aligned in parallel and can form row electrodes in the display device as further described below. As will be appreciated by those skilled in the art, the term "patterned" is used herein to refer to masking and even etching processes. In some implementations, highly conductive and reflective materials such as aluminum (Al) are used for the movable reflective layer 14, and their strips can form column electrodes within the display device. The movable reflective layer 14 is placed between one or more filmed metal layers and columns 18 (orthogonal to the row electrodes of the optical stack 16) to form a filmed column on the column 18. It can be formed as a series of parallel strips of deposited intervening sacrificial material. When the sacrificial material is removed, a defined gap 19 or optical cavity can be formed between the movable reflective layer 14 and the optical stack 16. In some implementations, the spacing between the struts 18 may be on the order of 1 to 1000 μm, while the gap 19 may be on the order of less than 10,000 angstroms (Å).
In some implementations, each pixel of the IMOD, whether active or relaxed, is essentially a capacitor formed by a fixed and moving reflective layer. When no voltage is applied, the movable reflective layer 14 remains mechanically relaxed, as shown by the IMOD 12 on the left of FIG. 1, and the gap 19 is with the movable reflective layer 14 and the optical stack 16. Is between. However, when a potential difference, eg, a voltage, is applied to at least one of the selected rows and columns, the capacitor formed at the intersection of the row and column electrodes in the corresponding pixel is charged and electrostatic force is applied to the electrodes. Attract. If the applied voltage exceeds a threshold, the movable reflective layer 14 can deform and move or abut on the optical stack 16. The dielectric layer (not shown) in the optical stack 16 prevents short circuits and controls the separation distance between layers 14 and 16, as shown by the actuated IMOD 12 on the right of FIG. Can be done. This behavior is the same regardless of the polarity of the applied potential difference. A series of pixels in an array may be referred to as "rows" or "columns" in some cases, but those skilled in the art will refer to one direction as "rows" and the other direction as "columns". It will be easy to understand that things are optional. In other words, in some orientations, rows are considered columns and columns are considered rows. Further, the display elements can be evenly arranged in orthogonal rows and columns (array) or in a non-linear configuration, eg, in a configuration with offsets at specific positions with respect to each other (mosaic). ). The terms "array" and "mosaic" may refer to any configuration. Thus, although the indication is referred to as including an "array" or "mosaic", the elements themselves are, in any case, arranged orthogonally to each other or evenly distributed. It is not necessary, but it may include an arrangement configuration having an asymmetrical shape and unevenly distributed elements.
FIG. 2 shows an example of a system block diagram showing an electronic device incorporating a 3x3 interferometric modulator display. The electronic device includes a processor 21 that can be configured to run one or more software modules. In addition to running the operating system, processor 21 may be configured to run one or more software applications, including web browsers, telephone applications, e-mail programs, or other software applications.
The processor 21 can also be configured to communicate with the array driver 22. The array driver 22 can include, for example, a row driver circuit 24 and a column driver circuit 26 that send signals to the display array or panel 30. The cross section of the IMOD display device shown in FIG. 1 is shown by a straight line 1-1 in FIG. Although FIG. 2 shows a 3x3 array of IMODs for clarity, the display array 30 may accommodate a very large number of IMODs, and the number of IMODs varies between rows and columns. And vice versa.
FIG. 3 is a diagram showing the relationship between the position of the movable reflection layer and the applied voltage with respect to the interference modulator of FIG. In MEMS interferometric modulators, row / column (ie, common / segment) write procedures can take advantage of the hysteresis characteristics of these devices as shown in FIG. The interferometric modulator may require, for example, a potential difference of about 10 volts to change the movable reflective layer, or mirror, from the relaxed state to the working state. When the voltage drops below that value, the movable reflective layer remains in that state even when the voltage drops below, for example, 10 volts, but the movable reflective layer cannot completely relax until the voltage drops below 2 volts. Absent. Thus, there is a voltage in the range of about 3 to 7V, as shown in FIG. 3, when there is a window of applied voltage where the device is in a stable range in either the relaxed or operating state. .. This is referred to herein as the "hysteresis window" or "stability window." In the display array 30 with the hysteresis characteristic of FIG. 3, the row / column write procedure is designed to address one or more rows at a time, so that when addressing a given row, addressing is done. The activated pixels in the row are exposed to a voltage difference of about 10 volts and the relaxed pixels are exposed to a voltage difference close to zero volts. After addressing, the pixels are exposed to a steady state or bias voltage difference of about 5 volts to remain in the previous strobing state. In this example, after addressing, each pixel will have a potential difference within the range of a "stability window" of about 3-7 volts. This characteristic of the hysteresis characteristic allows, for example, the pixel design shown in FIG. 1 to remain stable under the same applied voltage conditions in the pre-existing state of either actuation or relaxation. This stable state consumes or loses power substantially because each IMOD pixel, whether active or relaxed, is essentially a capacitor formed by a fixed and moving reflective layer. Hystery without It can be held at a steady voltage in the syswindow. Moreover, if the applied potential remains nearly fixed, then essentially little or no current will flow into the pixels of the IMOD.
In some implementations, the frame of the image applies a data signal in the form of a "segment" voltage along a set of column electrodes according to the desired change (if any) to the state of the pixels in a given row. Can be formed by Each line of the array is addressed in sequence, which allows frames to be written line by line. In order to write the desired data to the pixels in the first row, a segment voltage corresponding to the desired state of the pixels in the first row is applied onto the column electrodes and a first of a particular "common" voltage or signal form. One row pulse can be applied to the first row electrode. A set of segment voltages is then varied to accommodate the desired change (if any) to the state of the pixels in the second row, and a second common voltage is applied to the second row electrode. Can be done. In some implementations, the pixels in the first row are unaffected by changes in the segment voltage applied along the column electrodes and remain in their set state in the row pulse of the first common voltage. This process can be repeated sequentially for a series of rows, columns, or the whole to generate an image frame. These frames can be refreshed and / or updated with new image data by continuously repeating this process at a desired number of frames per second.
The combination of segments and common signals applied on each pixel (ie, the potential difference on each pixel) determines the resulting state of each pixel. FIG. 4 shows an example of a table showing different states of the interfer modulator when different common and segment voltages are applied. As will be readily appreciated by those skilled in the art, the "segment" voltage shall be applied to either the column electrode or the row electrode and the "common" voltage shall be applied to the other of the column electrode or the row electrode. Can be done.
As shown in FIG. 4 (and in the timing diagram shown in FIG. 5B), the release voltage VC<sub>REL</sub>Is applied along the common line, all coherent modulator elements along the common line have a voltage applied along the segment line, i.e. a high segment voltage VS.<sub>H</sub>And low segment voltage VS<sub>L</sub>Regardless of, it is placed in a relaxed state, or a state referred to as a released or inactive state. In particular, the release voltage VC<sub>REL</sub>Is applied along the common line, the potential applied to the modulator (also referred to as the pixel voltage) is the high segment voltage VS.<sub>H</sub>And low segment voltage VS<sub>L</sub>Both are within the relaxation window (see FIG. 3, also referred to as the release window) when applied along the corresponding segment line of the pixel.
High hold voltage VC<sub>HOLD_H</sub>Or low hold voltage VC<sub>HOLD_L</sub>When a hold voltage such as is applied on the common line, the state of the interference modulator remains constant. For example, a relaxed IMOD stays in the relaxed position and an actuated IMOD stays in the actuated position. The hold voltage is a segment voltage VS with a high pixel voltage.<sub>H</sub>And low segment voltage VS<sub>L</sub>Are chosen to stay within the stability window when both are applied along the corresponding segment lines. Therefore, the segment voltage width, that is, the high VS<sub>H</sub>And low segment voltage VS<sub>L</sub>The difference from is less than the width of either the positive or negative stability window.
High addressing voltage VC<sub>ADD_H</sub>Or low addressing voltage VC<sub>ADD_L</sub>When an addressing voltage or operating voltage is applied to a common line, such as, data can be selectively written to a modulator along that line by applying a segment voltage along each segment line. .. The segment voltage can be selected so that the operation depends on the applied segment voltage. When the addressing voltage is applied along the common line, applying one segment voltage results in the pixel voltage falling within the stability window and the pixel remaining inactive. In contrast, applying the other segment voltage results in the pixel voltage exceeding the stability window, resulting in pixel activation. The particular segment voltage that causes the operation can vary depending on which addressing voltage is used. High addressing voltage VC in some implementations<sub>ADD_H</sub>Is applied along the common line, high segment voltage VS<sub>H</sub>When applied, the modulator stays in its current position and has a low segment voltage VS.<sub>L</sub>Can be applied to activate the modulator. As a corollary, the effect of segment voltage is low addressing voltage VC<sub>ADD_H</sub>Is the opposite when applied, and the high segment voltage VS<sub>H</sub>Causes modulator operation and low segment voltage VS<sub>L</sub>Has no effect on the state of the modulator (ie, remains stable).
In some implementations, hold voltage, addressing voltage, and segment voltage can be used that always generate a potential difference of the same polarity on the modulator. In some other implementations, signals that alternate the polarity of the modulator's potential difference may be used. Alternating polarities on the modulator (ie, alternating polarities of the write procedure) can reduce or suppress the charge buildup that can occur after repeated write operations of unipolarity.
FIG. 5A is a diagram showing a frame of display data in the 3 × 3 interferometric modulator display of FIG. FIG. 5B is an example timing diagram for common and segment signals that can be used to write frames for the display data illustrated in FIG. 5A. These signals can be applied, for example, to the 3x3 array of FIG. 2, and finally the display arrangement configuration of line time 60e shown in FIG. 5A is obtained. The activated modulator of FIG. 5A is in the dark state, i.e., a substantial portion of the reflected light is outside the visible spectrum, resulting in, for example, appearing dark to the observer. The pixels may be in any state before writing the frame shown in FIG. 5A, but in the writing procedure shown in the timing diagram of FIG. 5B, each before the first line time 60a. Assume that the modulator has been released and is inactive.
At the first line time 60a, the release voltage 70 is applied on the common line 1, and the voltage applied on the common line 2 starts at the high hold voltage 72, shifts to the release voltage 70, and has a low hold voltage 76. Is applied along the common line 3. Therefore, the modulators (common 1, segment 1), (1, 2), and (1, 3) along the common line 1 are in a relaxed state, that is, inactive during the duration of the first line time 60a. The modulators (2, 1), (2, 2), and (2, 3) staying in the state and along the common line 2 shift to the relaxed state, and the modulators (3, 1) along the common line 3 , (3, 2), and (3, 3) remain in the previous state. With reference to FIG. 4, it can be seen that the segment voltage applied along the segment lines 1, 2, and 3 has no effect on the state of the coherent modulator, which is the common lines 1, 2, or 3. None of them are exposed to the voltage level that causes the operation at line time 60a (ie, VC).<sub>REL</sub>-Relaxation and VC<sub>HOLD_L</sub>-Stable).
At the second line time 60b, the voltage on the common line 1 shifts to a high hold voltage 72, and all modulators along the common line 1 remain relaxed regardless of the applied segment voltage. This is because the address designation voltage, that is, the operating voltage was not applied on the common line 1. The modulator along the common line 2 remains in a relaxed state by applying the release voltage 70, and the modulators (3, 1), (3, 2), and (3, 3) along the common line 3 are common. When the voltage along the wire 3 shifts to the release voltage 70, it relaxes.
At the third line time 60c, the common line 1 is addressed by applying a high addressing voltage 74 onto the common line 1. Since the low segment voltage 64 is applied along the segment lines 1 and 2 when this addressing voltage is applied, the pixel voltage applied to the modulators (1, 1) and (1, 2) is the positive of the modulator. The modulators (1, 1) and (1, 2) are activated above the top edge of the stability window (ie, the voltage difference exceeds a predetermined threshold). On the contrary, since the high segment voltage 62 is applied along the segment line 3, the pixel voltage applied to the modulators (1, 3) is lower than the voltages of the modulators (1, 1) and (1, 2). The positive stability of the modulator stays within the window, so that the modulators (1, 3) remain relaxed. Further, at the line time 60c, the voltage along the common line 2 decreases to a low hold voltage 76, the voltage along the common line 3 stays at the release voltage 70, and the modulator along the common lines 2 and 3 is used. Leave in the relaxed position.
At the fourth line time 60d, the voltage on the common line 1 returns to the high hold voltage 72, leaving the modulator along the common line 1 in each addressed state. The voltage on the common line 2 drops to a low addressing voltage 78. Since the high segment voltage 62 is applied along the segment line 2, the pixel voltage across the modulator (2, 2) is lower than the bottom edge of the modulator's negative stability window, causing the modulator (2, 2) to Operate. Conversely, the low segment voltage 64 is applied along the segment lines 1 and 3, so that the modulators (2, 1) and (2, 3) remain in the relaxed position. The voltage on the common line 3 rises to a high hold voltage 72, leaving the modulator along the common line 3 in a relaxed state.
Finally, at the fifth line time 60e, the voltage on the common line 1 stays at the high hold voltage 72, the voltage on the common line 2 stays at the low hold voltage 76, and the modulator along the common lines 1 and 2. Leaves each address specified. The voltage on the common line 3 rises to a higher addressing voltage 74, addressing the modulator along the common line 3. Modulators (3, 2) and (3, 3) operate when a low segment voltage 64 is applied over segment lines 2 and 3, but when a high segment voltage 62 is applied along segment 1, the modulators (3, 2) and (3, 3) operate. The modulators (3, 1) remain in the relaxed position. Therefore, at the end of the fifth timeline 60e, the 3x3 pixel array is in the state shown in FIG. 5A, and modulators along other common lines (not shown) are addressed. Regardless of the segment voltage fluctuations that may occur during that time, it remains in that state as long as the hold voltage is applied along the common line.
In the timing diagram of FIG. 5B, a given write procedure (ie, line times 60a-60e) can include the step of using either a high hold and addressing voltage or a low hold and addressing voltage. After this write procedure is completed for a given common line (the common voltage is set to a hold voltage with the same polarity as the working voltage), the pixel voltage stays within the given stability window and the release voltage. Does not pass through the relaxation window until is applied on its common line. Moreover, if each modulator is released as part of a write procedure before addressing the modulator, the modulator operating time, rather than the release time, can determine the required line time. Especially in implementations where the release time of the modulator is longer than the operating time, the release voltage can be applied longer than a single line time, as shown in FIG. 5B. In some other implementations, the voltage applied along the common or segment lines may vary to adapt to fluctuations in the operating and release voltage of different modulators, such as different colored modulators. ..
The structural details of an interferometric modulator operating according to the principles described above can vary widely. For example, FIGS. 6A-6E show examples of cross sections of various implementations of the interference modulator, including the movable reflective layer 14 and its supporting structures. FIG. 6A shows an example of a partial cross section of the interference modulated display of FIG. 1, where a strip of metal material, i.e., a support 18 in which the movable reflective layer 14 extends in a direction orthogonal to the substrate 20. It is formed on top. In FIG. 6B, the movable reflective layer 14 of each IMOD generally has a square or rectangular shape and is attached to the support at or near a corner on the tether 32. In FIG. 6C, the movable reflective layer 14 is suspended from a deformable layer 34, which generally has a square or rectangular shape and may contain soft metal. The deformable layer 34 can be directly or indirectly connected to the substrate 20 around the movable reflective layer 14. These connections are referred to herein as support struts. The implementation shown in FIG. 6C has the additional advantage obtained by separating the optical function of the movable reflective layer 14 from the mechanical function performed by the deformable layer 34. This separation allows the structural design and materials used for the reflective layer 14 and the structural design and structure used for the deformable layer 34 to be optimized independently of each other.
FIG. 6D shows another example of IMOD, where the movable reflective layer 14 includes a reflective portion layer 14a. The movable reflective layer 14 is installed on a support structure such as a support column 18. The support column 18 is movable, for example, when the movable reflective layer 14 is in a relaxed position, separating the movable reflective layer 14 from the lower static electrode (ie, part of the optical stack 16 in the indicated IMOD). A gap 19 is formed between the reflective layer 14 and the optical stack 16. The movable reflective layer 14 can also include a conductive layer 14c and a support layer 14b that can be configured to serve as electrodes. In this example, the conductive layer 14c is disposed on one side of the support layer 14b, which is distal to the substrate 20, and the reflective portion layer 14a is the other of the support layer 14b, which is proximal to the substrate 20. It is arranged on the side of. In some implementations, the reflective portion layer 14a is conductive and can be disposed between the support layer 14b and the optical stack 16. The support layer 14b is a dielectric material such as silicon nitride (SiON) or silicon dioxide (SiO).<sub>2</sub>) Can include one or more layers. In some implementations, the support layer 14b is, for example, SiO.<sub>2</sub>/ SiON / SiO<sub>2</sub>It can be a stack of layers such as a three-layer stack. Either or both of the reflective partial layer 14a and the conductive layer 14c can include, for example, an Al alloy containing about 0.5% Cu, or another reflective metal material. By using the conductive layers 14a and 14c above and below the dielectric support layer 14b, the stress can be balanced and the conductivity can be enhanced. In some implementations, the reflective sublayer 14a and the conductive layer 14c can be formed from different materials for a variety of design purposes, such as forming a particular stress profile within the movable reflective layer 14.
As shown in FIG. 6D, some implementations may also include a black mask structure 23. The black mask structure 23 can be formed within the optically inert region (eg, between pixels or under the strut 18) to absorb ambient or stray light. The black mask structure 23 can also improve the optical properties of the display device by suppressing light from being reflected or transmitted through the inert portion of the display, thereby increasing the contrast ratio. In addition, the black mask structure 23 can be conductive and can be configured to function as an electrical bath layer. In some implementations, the row electrodes can be connected to the black mask structure 23 to reduce the resistance of the connected row electrodes. The black mask structure 23 can be formed using a variety of methods, including film formation and patterning techniques. The black mask structure 23 can include one or more layers. For example, in some implementations, the black mask structure 23 is a molybdenum-chromium (MoCr) layer, SiO that acts as a light absorber.<sub>2</sub>It contains layers, as well as aluminum alloys that act as reflectors and bath layers, with thicknesses in the range of about 30-80 Å, 500-1000 Å, and 500-6000 Å, respectively. Patterning one or more layers, eg MoCr and SiO<sub>2</sub>CF for the layer<sub>4</sub>And / or O<sub>2</sub>, As well as Cl for the aluminum alloy layer<sub>2</sub>And / or BCl<sub>3</sub>It can be done using a variety of techniques, including photolithography and dry etching. In some implementations, the black mask 23 may be of etalon or interference stack structure. In such an interference stack black mask structure 23, conductive absorbers can be used to transmit or pass signals between the lower static electrodes in the optical stack 16 in each row or column. In some implementations, the spacer layer 35 can generally serve to electrically insulate the absorber layer 16a from the conductive layer in the black mask 23.
FIG. 6E shows another example of IMOD, where the movable reflective layer 14 is a self-support. In contrast to FIG. 6D, the implementation of FIG. 6E does not include a support column 18. Instead, the movable reflective layer 14 contacts the underlying optical stack 16 at multiple locations, and the curvature of the movable reflective layer 14 causes the movable reflective layer if the voltage applied to the interference modulator is insufficient to cause operation. 14 provides sufficient support to return to the non-actuated position of FIG. 6E. The optical stack 16, which may contain a plurality of different layers, is shown here as including a light absorber 16a and a dielectric 16b for clarity. In some implementations, the light absorber 16a can serve as both a fixed electrode and a partially reflective layer.
In an implementation as shown in FIGS. 6A-6E, the IMOD acts as a direct-view device, in which case the image is the opposite of the front of the transparent substrate 20, i.e. the modulator is arranged. Seen from the side of. In these implementations, the black part of the device (ie, any part of the display device behind the movable reflective layer 14, including the deformable layer 34 shown in FIG. 6C, for example) is the image quality of the display device. It can be configured and manipulated without any effect or adverse effect, because the reflective layer 14 optically shields those parts of the device. For example, in some implementations, the bus behind a movable reflective layer 14 has the ability to separate the optical properties of the modulator from the electromechanical properties of the modulator, such as voltage addressing and the movement resulting from such addressing. Structures (not shown) can be included. In addition, the implementation of FIGS. 6A-6E can simplify processing such as pattern formation.
FIG. 7 is an example of a flow diagram showing a manufacturing process 80 for an interference modulator, and FIGS. 8A-8E are schematic cross-sectional views of the corresponding stages of such a manufacturing process 80. In some implementations, manufacturing process 80 is implemented to manufacture, for example, the common types of interference modulators shown in FIGS. 1 and 6, in addition to other blocks not shown in FIG. Can be done. With reference to FIGS. 1, 6 and 7, it can be seen that the process 80 starts at block 82 and the optical stack 16 is formed on the substrate 20. FIG. 8A shows such an optical stack 16 formed on the substrate 20. The substrate 20 can be a transparent substrate such as glass or plastic, which may be soft or relatively rigid and non-bendable, to facilitate the efficient formation of the optical stack 16. It may be passed through a preceding preparatory process, such as cleaning. As described above, the optical stack 16 is conductive, partially transmissive, and partially reflective, eg, one or more layers having the desired properties on the transparent substrate 20. It can be manufactured by forming a film on the film. In FIG. 8A, the optical stack 16 includes a multi-layer structure with sublayers 16a and 16b, but some other implementations can add or subtract sublayers. In some implementations, one of the sublayers 16a, 16b can be configured to have both optically absorbent and conductive properties, such as a combined conductor / absorber sublayer 16a. In addition, one or more of the partial layers 16a, 16b may be patterned on a plurality of parallel strips to form row electrodes within the display device. Such patterning can be performed by a masking and etching process or another suitable process known in the art. In some implementations, one of the sublayers 16a, 16b is formed on one or more metal layers (eg, one or more reflective and / or conductive layers), such as the sublayer 16b. Insulation or dielectric It may be a layer. In addition, the optical stack 16 can be patterned into separate parallel strips that form the lines of display.
Process 80 proceeds to block 84, where the sacrificial layer 25 is formed on the optical stack 16. The sacrificial layer 25 is later removed to form the cavity 19 (eg, in block 90), so the sacrificial layer 25 is shown in the resulting interference modulator 12 shown in FIG. It has not been. FIG. 8B shows a partially crafted device that includes a sacrificial layer 25 formed on top of the optical stack 16. The step of forming the sacrificial layer 25 on the optical stack 16 is xenon difluoride (XeF) such as molybdenum (Mo) or amorphous silicon (Si).<sub>2</sub>) May then include the step of forming a film with a thickness selected to form a gap or cavity 19 (see also FIGS. 1 and 8E) having the desired design dimensions after removal. The stage of depositing the sacrificial material is a film formation technique such as physical vapor deposition (PVD, for example, sputtering), plasma chemical vapor deposition (PECVD), thermochemical vapor deposition (thermal CVD), or spin coating. Can be done using.
Process 80 proceeds to block 86, where support structures such as struts 18 as shown in FIGS. 1, 6 and 8C are formed. The support column 18 is formed by forming a pattern of the sacrificial layer 25 to form a support structure opening, and then forming a material (for example, a polymer or inorganic material, for example, silicon oxide) in the opening to form a support structure opening. However, a film forming method such as PVD, PECVD, thermal CVD, or spin coating is used in this step. In some implementations, the support structure openings formed within the sacrificial layer may penetrate both the sacrificial layer 25 and the optical stack 16 to reach the underlying substrate 20, with the lower end of the stanchion 18 being shown in the figure. Contact with substrate 20 as shown in 6A. Alternatively, as shown in FIG. 8C, the openings formed within the sacrificial layer 25 may penetrate the sacrificial layer 25 but not the optical stack 16. For example, FIG. 8E shows the lower end of the support column 18 in contact with the upper surface of the optical stack 16. The stanchion 18, or other support structure, forms a layer of support structure material on top of the sacrifice layer 25 to pattern a portion of the support structure material that is located away from the openings in the sacrifice layer 25. Can be formed by The support structure can be placed within the opening, as shown in FIG. 8C, but can also extend, at least in part, over a portion of the sacrificial layer 25. As pointed out above, patterning of the sacrificial layer 25 and / or support columns 18 can be performed by patterning and etching processes, but can also be performed by alternative etching methods.
Process 80 proceeds to block 88, where a movable reflective layer or film, such as the movable reflective layer 14 shown in FIGS. 1, 6, and 8D, is formed. The movable reflective layer 14 is used by using one or more film formation processes, such as a reflective layer (eg, aluminum, aluminum alloy) film formation, in combination with one or more patterning, masking, and / or etching processes. Can be formed. The movable reflective layer 14 is conductive and can also be referred to as a conductive layer. In some implementations, the movable reflective layer 14 may include multiple sublayers 14a, 14b, 14c as shown in FIG. 8D. In some implementations, one or more of the sublayers 14a, 14c, etc. will include a sublayer with high reflectance selected for their optical properties, and another sublayer 14b will include that sublayer 14b. It may include a mechanical sublayer selected for its mechanical properties. The movable reflective layer 14 is typically immovable at this stage because the sacrificial layer 25 is still present in the partially made interference modulator formed by the block 88. A partially produced IMOD that includes a sacrificial layer 25 is sometimes referred to herein as an "unreleased" IMOD. As described above in connection with FIG. 1, the movable reflective layer 14 can be patterned on separate parallel strips forming a row of displays.
Process 80 proceeds to block 90, where cavities, such as cavities 19 as shown in FIGS. 1, 6, and 8E, are formed. The cavity 19 can be formed by exposing the sacrificial material 25 (filmed in block 84) to the etchant. Etching sacrificial materials such as Mo or amorphous Si by dry chemical etching, eg, sacrificial layer 25, solid XeF for a period of time effective to remove the desired amount of material.<sub>2</sub>It can be removed by exposure to a gaseous or vaporized etchant, such as vapor resulting from, and typically can be selectively removed with respect to the structure surrounding the cavity 19. Etching sacrificial materials and etching methods, such as other combinations of wet etching and / or plasma etching, may also be used. Since the sacrificial layer 25 is removed at the block 90, the movable reflective layer 14 is typically movable after this stage. After removing the sacrificial material 25, the resulting completed or partially produced IMOD may be referred to herein as a "release" IMOD.
(Explanation of implementation of microfabricated piezoelectric X-axis and Y-axis gyroscopes) Some of the disclosed microfabricated piezoelectric gyroscope structures provide improved mechanical sensing elements that overcome some performance-related limitations of conventional piezoelectric tuning fork gyroscopes.
(Previous technology gyroscope) Conventional piezoelectric gyroscopes use either a single-headed tuning fork structure or a double-headed tuning fork structure. 9A and 9B are diagrams showing examples of driving and sensing modes of a single tuning fork type gyroscope. As shown in FIGS. 9A and 9B, a single-headed tuning fork consists of two branches used for both driving and sensing functions. In FIGS. 9A and 9B, the dark area shows a part of the stationary gyroscope 900 and the light area shows a part of the moving gyroscope 900. The branches 910a and 910b are piezoelectrically driven in opposite phases, usually in a plane, as shown in FIG. 9A. In response to the rotation applied, the Coriolis force causes the branches 910a and 910b to oscillate out of plane in opposite directions (see FIG. 9B). The resulting sensing mode vibrations generate a sensing charge in the piezoelectric material of the gyroscope 900, which may be a bulk material or a piezoelectric layer deposited on the structural material of the gyroscope 900.
A major limitation of such tuning fork systems is that the branches 910a and 910b used in the sensing pickup are also affected by driving motion, which can be orders of magnitude greater than the sensing motion. As a result, the mechanical shortcomings and asymmetry of the branches 910a and 910b result in significant levels of drive interference within the sensed signal, which can cause orthogonality and bias errors.
Another drawback of such tuning fork systems is that parasitic resonance modes below the operating frequency are unavoidable. Homeomorphic mode is generally lower than homeomorphic mode and can be easily excited by vibration.
The double-headed tuning fork system (not shown) uses separate branches for drive and sensing functions. The two branches are driven in opposite phase. The Coriolis force induced on the drive branch excites the torsion-sensing common mode, which in turn causes vibrations on the sensing branch. The double-headed tuning fork reduces drive interference on the sensing branch, but reduces efficiency for a given device size. In addition, many unwanted parasitic modes occur at frequencies below and above the operating frequency, even more than those that occur with single-headed tuning forks.
(Piezoelectric X-axis gyroscope structure) Some micromachined piezoelectric gyroscope architectures disclosed herein twist and vibrate in plane (around the z-axis) when operating in drive mode and operate in sensing mode. Includes a proof mass that can twist and vibrate out of plane (around the y-axis for the x-axis gyroscope and around the x-axis for the y-axis gyroscope) while doing so.
FIG. 10A shows an example of a gyroscope 1000 having a proof mass suspended by a drive beam attached to a central anchor. Here, the proof mass 1020 is suspended by the bent portions 1010a and 1010b attached to the central anchor 1005. The drive electrodes 1015a-d can be patterned on the top and / or bottom side of the bend. The proof mass 1020, bends 1010a and 1010b, and central anchor 1005 are made of a variety of thick, plated metal alloys (eg, nickel alloys such as Ni-Co or Ni-Mn), single crystal silicon, polycrystalline silicon, and the like. It can be made from materials. In this example, the overall x and y dimensions of the gyroscope 1000 are on the order of a few millimeters or less. For example, in some implementations, the width can be in the range of 0.25 mm to 1 mm and the length can be in the range of 1 mm to 4 mm. The thickness can range from less than 1 micron to more than 50 microns.
In this illustrated example, the drive electrodes 1015a-d are arranged symmetrically on each side of the center line 1017a. The center line 1017a corresponds to the x-axis in this example. Here, the drive electrode 1015 includes a piezoelectric film arranged on the bent portions 1010a and 1010b, whereby the bent portions 1010a and 1010b can function as a driving beam. The piezoelectric film can be aluminum nitride (AlN), zinc oxide (ZnO), lead zirconate titanate (PZT), or other thin film. In some implementations, the drive electrode 1015 (and other drive electrodes described herein) is a piezoelectric disposed between two metal layers used to apply voltage to the piezoelectric membrane. May include membranes. The piezoelectric film may be, for example, a non-conductive piezoelectric film. By applying a voltage to the metal layer, the drive electrode can be moved. Alternatively, the piezoelectric material may be a single crystal material such as quartz, lithium niobate, or lithium tantalate.
In the implementation shown in FIG. 10A, the sensing electrodes 1025a and 1025b are piezoelectric films formed along the centerline 1017a. In an alternative implementation, the sensing electrodes 1025a and 1025b may be formed on the proof mass 1020. Alternatively, the sensing electrodes 1025a and 1025b may be formed on the same side on which the driving electrodes 1015 are formed, but on the bends 1010a and 1010b in either the layer above or below the driving electrodes 1015. In some other implementations, the sensing electrodes 1025a and 1025b may be formed on opposite sides of the bends 1010a and 1010b. In some implementations, the sensing electrodes 1025a and 1025b (and other sensing electrodes described herein) are disposed between two metal layers used to apply voltage to the piezoelectric membrane. It may include a piezoelectric film. The piezoelectric film may be, for example, a non-conductive piezoelectric film. By moving the sensing electrode, it is possible to cause a change in the voltage applied to the metal layer.
FIG. 10B is a diagram showing an example of mounting a gyroscope, which is similar to that of FIG. 10A but has a gap between the driving electrodes. In this example, the gyroscope 1000a includes slots 1012a and 1012b within the bends 1010c and 1010d. Here, slots 1012a and 1012b are symmetrical with respect to the centerline 1017b. The inclusion of slots 1012a and 1012b allows the bends 1010c and 1010d to exhibit relatively great flexibility against forces in the plane.
When the anti-phase signal is applied to the drive electrodes 1015a to d, a bending moment is generated in the bending portions 1010a to d. For example, referring to FIG. 10A, it can be seen that when a positive drive voltage is applied to the electrode 1015a and a negative drive voltage is applied to the electrode 1015b, one electrode expands and the other electrode contracts. A bending moment is generated at the bent portion 1010a. Similarly, when a positive drive voltage is applied to the electrode 1015d and a negative drive voltage is applied to the electrode 1015c, one electrode expands, the other electrode contracts, and a bending moment is generated in the bent portion 1010b. To do. When the bends 1010a and 1010b are operated in opposite directions, the torsion plane drive mode is excited. Sensing electrodes 1025a and 1025b detect out-of-plane torsional movement of the proof mass 1020 in response to rotation caused around the x-axis. Similarly, sensing electrodes 1025c and 1025d disposed on the proof mass 1020 of FIG. 10B can be used to detect angular rotations caused around the x-axis.
In FIGS. 11A and 11B, the darkest region shows the portion of the gyroscope 1000 that is almost stationary, and the bright region shows the portion of the gyroscope 1000 that is moving. FIG. 11A shows an example of an implementation drive mode as shown in FIG. 10A. In FIG. 11A, the side portion 1105a of the gyroscope 1000 is driven in the direction indicated by the arrow 1110a, while the side portion 1105b of the gyroscope 1000 is driven in the direction indicated by the arrow 1110b. When the polarity of the drive voltage is reversed, the side portions 1105a and 1105b are driven in the opposite directions to those shown. In this way, the proof mass 1020 can be driven in vibration torsion mode at a frequency nominally equal to the frequency of the drive voltage.
FIG. 11B shows an example of an implementation sensing mode driven as shown in FIG. 11A. If there is a rotation applied around the x-axis, a pure Coriolis moment around the y-axis can be induced on the proof mass 1020. As shown in FIG. 11B, the Coriolis moment excites the out-of-plane sensing mode, bending the sides 1105a and 1105b out of the plane in opposite directions. This sensing motion can generate a piezoelectric charge on the sensing electrodes 1025a-d as shown in FIGS. 10A and 10B.
Implementations such as those shown in FIGS. 10A and 10B can largely eliminate the in-phase mode inherent in conventional tuning fork systems. Some such implementations can be further enhanced by using a large proof mass 1020.
(Separation of drive and perception) In the simple implementation described above, the sensing electrodes 1025a-d may be exposed to driving motion. Although the effects of drive motion can be eliminated in common mode, asymmetry and defects can cause the coupling of drive motion to the sense signal path. For some high performance applications, the resulting error can result in suboptimal performance.
To reduce drive interference when sensing, the drive and sense beams can be separated by using a frame structure. Two common approaches for separating the drive mode and the sensing mode are described below. The gyroscope described below can have an overall length and width on the order of a few millimeters or less. For example, some implementations have lengths in the range 0.5 mm to 3 mm and widths in the range 0.3 mm to 1.5 mm, the thickness of which is from about 1 to 50 microns and above. The range.
(Implementation of drive frame) Some drive frame gyroscope implementations include drive frames that vibrate only in drive mode. The drive frame may be disposed between the central anchor and the proof mass. Such an implementation can more effectively separate the driving motion from the sensing motion as compared to the implementation shown in FIGS. 10A and 10B.
FIG. 12 shows an example of mounting a drive frame gyroscope in which the drive frame is attached to a central anchor via a drive beam. Here, the drive frame 1210 of the gyroscope 1200 surrounds the central anchor 1205 and is attached to the central anchor 1205 via the drive beams 1215a to 12d. In this example, slot 1207 separates the drive frame 1210 from most of the central anchor 1205.
The proof mass 1220 surrounds the drive frame 1210. The proof mass 1220 is coupled to the drive frame 1210 by sensing beams 1225a-d. In this example, the proof mass 1220 is coupled only to the drive frame 1210 at the distal ends 1226 of the sensing beams 1225a-d, away from the central axis 1218, which corresponds to the y-axis in this example. Slots 1217 and 1229 separate the other parts of the sensing beams 1225a-d from the proof mass 1220. Slot 1217 also separates the drive frame 1210 from the proof mass 1220.
The drive beams 1215a-d are arranged symmetrically with respect to the center line 1231, which corresponds to the x-axis in this example. Differential drive can be used to generate drive vibrations. In such an implementation, the two drive beams on one side of the anchor 1205 are actuated in one direction with anti-phase signals and the other two beams on the other side of the anchor 1205 are actuated in opposite directions. , A pure rotation can be generated around the z-axis. Here, a negative voltage is applied to the drive electrodes (not shown) of the drive beams 1215a and 1215d, and at the same time, a positive voltage is applied to the drive electrodes of the drive beams 1215b and 1215c.
In this example, the drive and sensing electrodes include a piezoelectric membrane, which can be more clearly shown in FIGS. 13A and 13B. FIG. 13A shows an example of a cross section of a gyroscope implementation as shown in FIG. In this figure of the gyroscope 1200, the piezoelectric sensing electrode 1305a of the sensing beam 1225a and the piezoelectric sensing electrode 1305b of the sensing beam 1225b can be clearly shown. Piezoelectric sensing electrodes 1305c and 1305d of the sensing beams 1225c and 1225d may also be shown, respectively. FIG. 13B shows an example of an enlarged pair of drive beams in the gyroscope implementation shown in FIG. 13A. In FIG. 13B, the piezoelectric drive electrodes 1305e and 1305f can be shown on the drive beams 1215a and 1215b, respectively. As described in detail below with reference to FIG. 41 and beyond, in some implementations a single layer may be formed and patterned to form the piezoelectric films of electrodes 1305a-f. ..
Although the piezoelectric drive and sensing electrodes described herein are often shown on a gyroscope drive and sensing frame, proof mass, etc., such illustrations are solely for the sake of clarity. It is done as. In alternative implementations, such drive and sensing electrodes may be placed in "lower" (closer to the substrate) positions such as drive and sensing frames, proof masses, and the like. As described below with reference to FIGS. 41-46B, it may be advantageous to form the drive and sensing electrodes before forming the drive frame, sensing frame, proof mass and the like. In such a manufacturing method, a gyroscope in which the drive and sensing electrodes are arranged under the drive frame, the sensing frame, the proof mass, etc. can be manufactured.
FIG. 14A shows an example of a drive mode for mounting a gyroscope as shown in FIG. In FIGS. 14A and 14B, the cool part of the gyroscope 1200 moves relatively smaller than the warm part, the blue part of the gyroscope 1200 is almost stationary, while the red and orange parts are the gyroscope 1200. It's moving more than the rest of the world. Here, the drive beam 1215 is driven via a differential piezoelectric drive, as described above.
The drive beam 1215 is relatively flexible to in-plane motion, which allows the gyroscope 1200 to rotate about the z-axis. The drive beam 1215 is relatively rigid in all other directions, so the drive frame can be constrained to rotate only in drive mode (ie, the xy plane). Here, for example, the drive beam 1215 is relatively rigid along the x-axis and can suppress unwanted vibration modes. For example, the portion of slot 1207 parallel to the centerline 1218 forms a perforation along the y-axis of the drive frame 1210. Without extra stiffness, these perforations tend to form flexible hinges along the y-axis, which allows the drive frame 1210 to bend around this hinge.
FIG. 14B shows an example of sensing modes in an implementation of a gyroscope driven as shown in FIG. 14A. In sensing mode, the proof mass 1220 oscillates around the y-axis, inducing stress on the sensing beams 1225a-d. Here, the side portion 1220a of the proof mass moves upward, and at the same time, the side portion 1220b of the proof mass moves downward. Due to this out-of-plane sensing motion, the sensing beams 1225a-d bend out of the plane, and the corresponding sensing electrodes 1305a-d generate piezoelectric charges. At the moment shown in the example of FIG. 14B, the sensing beams 1225c and 1225d bend downwards, while the sensing beams 1225a and 1225b bend upwards. Therefore, the top surfaces of the sensing beams 1225c and 1225d extend and the top surfaces of the sensing beams 1225a and 1225b contract. When the driving motion is in the opposite direction, the sensing beams 1225c and 1225d bend upwards, while the sensing beams 1225a and 1225b bend downwards. With such an implementation, a differential detection mechanism can be realized, in which case the sensor output subtracts the sum of the electrodes of the sensing beams 1225c and 1225d from the sum of the electrodes of the sensing beams 1225a and 1225b, depending on the orientation. It is the one that was drawn, or vice versa.
In this configuration of the gyroscope 1200, the sensing motion of the proof mass 1220 is largely separated from the drive frame 1210. Separation of the driving motion and the sensing motion makes it easier to make the sensing electrode quieter, in part because the sensing electrode is not affected by the large amplitude driving motion. In some such implementations, the sensing beam may only be subjected to axial loads due to driving motion.
In the configuration shown in FIGS. 12-14B, the sensing beams 1225a-d are substantially rectangular in the xy plane. However, in alternative implementations, the sensing beams 1225a-d take other forms. In some such implementations, the sensing beams 1225a-d are tapered, for example as shown in FIG.
(Implementation of sensing frame) The various sensing frame gyroscope implementations described herein include sensing frames that oscillate in sensing mode but are nearly stationary in drive mode. FIG. 15 shows an example of implementing a sensing frame gyroscope. The sensing frame 1510 may be connected to the proof mass 1530 via the drive beams 1515a-d. Here, the drive beams 1515a to 15d connect the central portion 1510a of the sensing frame 1510 to the proof mass 1530. The central portion 1510a is disposed between the pair of anchors 1505a and 1505b. Here, the anchors 1505a and 1505b are separated from the central portion 1510a by a slot 1522.
The gyroscope 1500 is characterized by comprising a sensing frame 1510 connected to anchors 1505a and 1505b via sensing beams 1520a-d. In this example, the sensing frame 1510 includes a tapered portion 1512, each of which is wider at the first end 1513, which is in the vicinity of one of the anchors 1505a or 1505b, away from the anchors 1505a or 1505b. It is narrower at the second end 1514. Each of the sensing beams 1520a-d extends from one of the anchors 1505a or 1505b to one of the second end 1514. Here, the sensing beams 1520a to 15d are connected only to the sensing frame 1510 at the second end 1514. The sensing beams 1520a-d are separated from the first end 1513 by a slot 1522.
The proof mass 1530 is separated from the sensing beam 1520 and the sensing frame 1510 by a slot 1524. Further, the proof mass 1530 is separated from the sensing frame 1510 by a slot 1517. Therefore, the sensing frame 1510 is substantially separated from the driving motion of the proof mass 1530.
FIG. 16A shows an example of the drive mode of the gyroscope implementation shown in FIG. In FIG. 16A, the displacement of the proof mass 1530 with respect to the sensing frame 1510 is exaggerated so that their relative motion is more clearly visible. The dark blue part of the gyroscope 1500 is almost stationary, while the red and orange parts are more mobile than the rest of the gyroscope 1500. Here, the sensing frame 1510 is shown with a uniform dark blue shade, indicating that the sensing frame 1510 is almost non-moving. The displacement of the proof mass 1530 increases with increasing distance from the anchor 1505, as indicated by the continuous change in color from bright blue to red.
The sensing frame 1510 is coupled to the proof mass 1530 not only by the driving beam 1515 but also by the linkage beam 1525. The drive beam 1515 and linkage beam 1525 are flexible to in-plane deformation, which allows the proof mass 1530 to rotate in-plane with respect to the sensing frame in drive mode. However, the sensing frame 1510 is largely separated from the driving motion of the proof mass 1530.
FIG. 16B shows an example of sensing modes in an implementation of a gyroscope driven as shown in FIG. 16A. In sensing mode operation, the proof mass 1530 and sensing frame 1510 can together twist and vibrate out of plane. At the moment shown in FIG. 16B, the end 1605 of the proof mass 1530 is bent upwards and the end 1610 of the proof mass 1530 is bent downwards. Here, the linkage beam 1525 is rigid with respect to out-of-plane forces. Therefore, the linkage beam 1525 enhances the transmission of the sensing motion of the proof mass 1530 to the sensing frame 1510.
(Tapered sensing beam) The electrical sensitivity of piezoelectric gyroscope systems can be increased by improving the uniformity of stress with respect to the sensing beam. For some implementations of the rectangular sensing beam, the maximum bending stress on the sensing beam occurs at the anchor connection and decreases linearly with distance from the anchor. As a result of this configuration, the total piezoelectric charge at the sensing electrode may be reduced.
By using the tapered sensing beam profile, the decrease in bending stress can be compensated for by the increase in stress as the beam width gradually decreases. As such, a uniform stress profile can be achieved along the sensing beam and the charge generated across the sensing electrodes can be maximized.
FIG. 17 shows an example implementation of an alternative sensing frame gyroscope with a tapered sensing beam. Many features of the gyroscope 1700 are similar to the corresponding features of the gyroscope 1500. For example, the drive beam 1715 connects the central portion of the sensing frame 1710 to the proof mass 1730. The sensing beams 1720a-d extend from the anchors 1705a and 1705b to the distal end 1714 of the sensing frame 1710 away from the anchors 1705a and 1705b.
The proof mass 1730 is separated from the sensing beams 1720a-d by slots 1724. Further, the proof mass 1730 is separated from most of the sensing frame 1710 by a slot 1717. Similar to the sensing frame 1510 of the gyroscope 1500, the sensing frame 1710 is substantially separated from the driving motion of the proof mass 1730.
However, in the example shown in FIG. 17, the tapered sensing beam design is incorporated within the implementation of the isolated sensing frame. In the gyroscope 1700, the sensing beams 1720a-d have a width that decreases as the distance from the anchors 1705a and 1705b increases. For example, the tapered sensing beam 1720c includes a wide end 1722 attached to the anchor 1705b and a narrow end 1723 attached to the sensing frame 1710.
When the stress on the sensing beam during sensing motion is modeled by the finite element analysis method (FEA), it has been observed that some implementations of the tapered sensing beam design apply more uniform stress along the sensing beam. sell. FIG. 18 shows an example of a finite element analysis result superimposed on a gyroscope implementation, such as the implementation of FIG. 17, which shows a nearly uniform stress applied on the tapered sensing beam when operating in sensing mode. Shown. The near-uniform bright shadows on the tapered sensing beams 1720a and 1720c show near-uniform compression, while the near-uniform dark shadows on the tapered sensing beams 1720b and 1720d show near-uniform tension. ..
FIG. 19 shows a plot example of the relationship between the level of stress applied to the tapered sensing beam and the distance from the center (y-axis) with respect to the mounting of the gyroscope, such as the mounting of FIG. In FIG. 19, the stresses along the sensing beams 1720c and 1720d are plotted with respect to the distance along the x-axis. From FIG. 19, it can be observed that the stress levels in this implementation are relatively constant and do not decrease significantly with position along each sensing beam. Region 1905 corresponds to the nearly uniform tension of the tapered sensing beam 1720d, while region 1910 corresponds to the nearly uniform compression of the tapered sensing beam 1720c. At the optimum taper angle, a substantially constant stress level applied to each of the sensing beams 1720a to 1d can be achieved. The optimum taper angle will vary depending on the gyroscope design and can be determined by iterative FEA modeling. The optimum taper angle corresponds to the "flattest" or least variable curved surface in regions 1905 and 1910.
Although tapered sensing beams are shown here in the context of sensing frame gyroscope implementations, tapered sensing beams can also be used to improve sensitivity in other implementations. For example, the tapered sensing beam can be used in the implementation of a drive frame gyroscope as described above with reference to, for example, FIG.
Apart from the tapered sensing beam 1720, there are some additional differences between the gyroscope 1500 and the gyroscope 1700. With reference to FIG. 17 again, it can be observed that the linkage beam 1725 is a meandering bend, relatively far from the y-axis compared to the gyroscope 1500 and connected to the distal portion from the sensing frame 1710. .. This is a slight improvement over the configuration of the gyroscope 1500 in terms of coupling the sensing motion of the proof mass 1730, because it is far from the y-axis and closer to the maximum amplitude point of the sensing motion of the proof mass 1730. , Because the force is applied. By bringing the applied force closer to the tip of the wing-shaped sensing frame 1710, more force from the proof mass 1730 is applied to the sensing frame 1710.
Further, in the gyroscope 1700, a part of the slot 1726 (separating the anchors 1705a and 1705b from the sensing frame 1710) is substantially parallel to the corresponding portion of the slot 1717 (separating the sensing frame 1710 from the proof mass 1730). This modification allows the corresponding portion of the sensing frame 1710 to be sufficiently rigid.
(Explanation of implementation of microfabricated piezoelectric Z-axis gyroscope) Some implementations described herein provide a z-axis gyroscope with low orthogonality and bias error. Some implementations include a drive proof mass that is piezoelectrically driven in a nearly linear, x-direction motion (in plane). The drive proof mass can be mechanically coupled to a sensing proof mass that twists and vibrates in the presence of angular rotation around the z-axis. The motion of the sensing proof mass can induce charges within the piezoelectric membrane disposed above or below the sensing beam that connects the sensing mass to the substrate anchor. The induced charge can cause a change in the voltage of the piezoelectric sensing electrode, which can be electronically recorded and processed.
Proof mass is made from a variety of materials such as thick plated metal alloys (eg nickel alloys such as Ni-Co, Ni-Mn), single crystal silicon from the device layer of SOI wafers, glass, and other materials. be able to. Piezoelectric films are aluminum nitride (AlN), zinc oxide (ZnO), lead zirconate titanate (PZT), or other thin films, or single crystals such as quartz, lithium niobate, lithium tantalate, and other substances. It can be used as a material. Some implementations are suitable for manufacturing flat panel displays on glass.
Some implementations also involve adjusting the mechanical mode shape of the drive motion using an array of electrostatic actuators to suppress orthogonal coupling into the sensing frame. For example, in some implementations, the electrostatic actuator is an array of comb-toothed electrodes and / or desirable that fine-tunes the in-plane movement of the proof mass, as described in more detail below with reference to FIG. Includes an electrostatic gap between the substrate and the proof mass that suppresses vertical motion.
(Z-axis gyroscope architecture) FIG. 20A shows an example of a plan view of the implementation of the z-axis gyroscope 2000. The gyroscope 2000 includes a sensing frame 2010 disposed around the central anchor 2005. The sensing frame 2010 is connected to the central anchor 2005 via the sensing beams 2020a-d.
The drive frame 2030 is arranged around the sensing frame 2010 and connected to the sensing frame 2010. In this example, the drive beams 2015a-d piezoelectrically drive the drive frame 2030 in a substantially linear, x-direction motion (in a plane). Here, the drive frame 2030 includes drive frame portions 2030a and 2030b. The drive frame 2030 can be operated by applying an anti-phase voltage to each pair of adjacent drive beams, for example, applying a positive voltage to the drive beam 2015a and a negative voltage to the drive beam 2015b.
FIG. 20B is an enlarged view of the drive beams 2015c and 2015d of the z-axis gyroscope implementation shown in FIG. 20A. From this enlarged view, the drive beams 2015c and 2015d can be seen more clearly. The drive beams 2015c and 2015d are connected to the drive frame portion 2030b by a bent portion 2045b disposed in the slot 2035c. The electrodes 2050a and 2050b (including the piezoelectric film, respectively) are arranged on the drive beams 2015c and 2015d, respectively. In this example, a positive voltage is applied to the electrode 2050b and at the same time a negative voltage is applied to the electrode 2050a. Due to this applied voltage, compressive stress is applied to the drive beam 2015d, and torsional stress is applied to the drive beam 2015c. The opposing axial strains induced by the piezoelectric material cause a pure moment to move the drive frame portion 2030b in the positive x direction.
FIG. 21A shows an example of a drive mode for mounting a z-axis gyroscope as shown in FIG. 20A. In FIGS. 21A and 21B, the displacement is exaggerated for clarity. In FIG. 21A, the drive frame portion 2030b is moving in the positive x direction, and the drive frame portion 2030a is moving in the negative x direction. However, the driving motion is largely separated from the sensing frame 2010. Therefore, the sensing frame 2010 does not translate along the x-axis. Instead, the sensing frame 2010 remains nearly stationary if there is no rotation around the z-axis.
The functions of the gaps 2035a to 2035a and the bent portions arranged therein are clearly shown in FIG. 21A. The gaps 2035a to 2035a to e are substantially parallel to the y-axis. The cap 2035b, which extends substantially along the y-axis, is open. The bent portions 2047a and 2047b over the gap 2035b connecting the drive frame portions 2030a and 2030b are also open. The bends 2040a and 2040b extending along the gaps 2035d and 2035e are flexible to bending in a plane, so that the sensing frame 2030 is approximately approximately when the drive frame portions 2030a and 2030b are driven. Can stay in the same position. Similarly, at the bends 2045a and 2045b extending along the gaps 2035a and 2035b, the sensing frame 2010 can remain in approximately the same position when the drive frame portion 2030 is driven.
FIG. 21B shows an example of sensing modes in an implementation of a z-axis gyroscope driven as shown in FIG. 21A. The sensing beam 2020 is flexible with respect to rotation about the z-axis. Therefore, the sensing beam 2010 can generate torsional vibrations in the presence of angular rotation. These torsional sensing motions of the sensing frame 2010 can induce strain and charge within the piezoelectric membrane disposed on the sensing beam 2020. From FIG. 21B, it can be observed that the bent portions 2047a and 2047b can also be deformed by the sensing motion of the sensing frame 2010. However, the bent portions 2040a, 2040b, 2045a, and 2045b are hardly deformed.
In the implementation of the z-axis gyroscope disclosed herein, the drive and sensing frames can be designed in mechanically orthogonal vibration modes. As shown in FIG. 21A, in some implementations the drive suspension can limit the drive motion to a nearly linear displacement motion along the x-axis.
In contrast, the sensing frame suspension may be flexible to torsional rotation around the z-axis, but relatively rigid to translational motion in the x or y direction. The bent portion connecting the drive frame 2030 and the sensing frame 2010 can be made flexible with respect to a force in the x direction (orthogonal), but can be made relatively rigid with respect to a Coriolis coupling torsional force in the y direction. Such a configuration can substantially reduce the orthogonal coupling of the driving motion from the driving motion to the sensing motion.
In addition, in some implementations, the elements of the differential drive frame of the gyroscope can be mechanically coupled to reduce the number of parasitic resonances and separate frequencies in symmetric and asymmetric modes. As a result, these implementations resist orthogonal component-induced parasitic resonance.
(Optimization of sensing beam) The electrical sensitivity of piezoelectric gyroscope systems can be increased by improving the uniformity of stress with respect to the sensing beam. In the case of a sensing beam having a uniform rectangular cross section, the bending stress applied to the sensing beam is maximum at the anchor connection and decreases linearly as a function of the distance from the anchor. As a result, a suboptimal integrated piezoelectric charge is generated for the sensing electrode, and as a result, a voltage is generated.
FIG. 22 shows an enlarged view of one implementation of the tapered sensing beam from the z-axis gyroscope. As shown in FIG. 22, by using a tapered sensing beam profile, a nearly uniform stress profile can be achieved along the sensing beams 2020c and 2020d. Therefore, the total charge generated on the sensing electrode can be increased.
(Processing on glass of flat panel display) Some of the x-axis, y-axis, and z-axis gyroscopes disclosed herein are best suited for fabrication on the glass of large area flat panel displays. In some implementations using a plated metal alloy proof mass and a sputtered piezoelectric AlN film, the treatment can be performed at temperatures below 400 ° C. The plated metal proof mass has a high mass density (compared to silicon) and there is no deep reactive ion etching (DRIE) side wall slope, which is common to silicon-based electrostatic designs. Yes, it induces orthogonality. Details of some manufacturing processes will be described below with reference to FIG. 41 and subsequent figures.
In some implementations, the glass acts as both a substrate and a package, which can reduce the cost of the component. The z-axis gyroscope integrates with a number of other sensors and actuators such as accelerometers, x-axis and / or y-axis gyroscopes, magnetometers, microphones, pressure sensors, resonators, actuators and / or other devices. can do.
(Orthogonal adjustment by electrostatic actuator) Some implementations described herein use an array of electrostatic actuators to actively fine-tune the mechanical mode shape of the drive and / or sensing frame to reduce orthogonality and bias error. Accompanied by that. Orthogonality can be caused by unwanted deflection of the drive frame coupled to the sensing frame.
FIG. 23 shows an example of an electrode array that can be configured to apply a compensatory electrostatic force to fine-tune the vibration mode shape of the proof mass. FIG. 23 shows a proof mass 2305, which may be a gyroscope or an accelerometer proof mass. The desired movement of the proof mass 2305 is performed in a plane as shown. However, the vibration mode of the proof mass 2305 may have an out-of-plane component. An example of such an out-of-plane component, a small vertical undesired deflection (shown as the dashed contour of the proof mass 2305), is shown in FIG. Has been done. The electrode array 2310 can be configured to apply an electrostatic compensating force to the proof mass 2305. By controlling the electrode array 2310 to actively apply an electrostatic force that offsets the unwanted vertical component of motion of the proof mass 2305, the orthogonal induced acceleration coupled to the sensing frame can be reduced.
This idea is also applicable to many other implementations. For example, the electrostatic actuator may consist of a comb-tooth type configured to apply electrostatic force to offset unwanted y-direction motion.
(Explanation of accelerometer implementation) The various implementations described herein implement novel three-axis accelerometers and even their components. Such 3-axis accelerometers have a size, performance level, and cost suitable for use in a wide range of consumer electronics applications such as portable navigation devices and smartphones. Some such implementations include a capacitive stacked lateral overlap transducer (SLOT) based 3-axis accelerometer. In some implementations, two proof masses are used to achieve the 3-axis sensing function, while in other implementations, only one proof mass is used to achieve the 3-axis sensing function. Different bend types can be optimized for each axis.
Accelerometer mounts can be made on large area substrates, such as large area glass panels. As described in detail below, the fabrication process used to form an SLOT-based 3-axis accelerometer on a large area substrate is a process for fabricating a gyroscope on a large area substrate. Can be compatible. By combining such processes, it is possible to enable monolithic integration of six inertial sensing axes on a single glass substrate.
For xy-axis in-plane sensing, some implementations include a conductive proof mass and patterned electrodes on either side of the sacrificial gap. When acceleration is applied in the plane, the proof mass translates laterally, reducing the overlap between the first electrode and the proof mass and increasing the overlap between the second electrode and the proof mass. .. The in-plane bending bend can form a structural support for the suspended proof mass.
In z-axis out-of-plane sensing, an imbalance of moments on either side of the pivot can occur by making one side of the proof mass greater (or smaller) than the other side of the proof mass. For example, a moment imbalance on either side of the pivot can occur by drilling one side of the proof mass and / or forming proof masses of different widths and / or lengths on either side. .. In some implementations, negative z-direction acceleration causes the proof mass to rotate clockwise, increasing the gap between the first electrode and the proof mass, and between the second electrode and the proof mass. Reduce the gap. The z-axis accelerometer may include a torsion bend. In some implementations, 3-axis sensing can be achieved using one or two proof masses. Some examples will be described below.
FIG. 24 shows an example of an accelerometer for measuring in-plane acceleration. The accelerometer 2400 includes electrodes 2405a and 2405b formed on the substrate 2401. The electrodes 2405a and 2405b can be formed from any convenient conductive material, such as metal. The accelerometer 2400 includes a conductive proof mass 2410 that is separated from the electrodes 2405a and 2405b by a gap 2415. For example, the gap 2415 can be on the order of a few microns, eg 0.5 or 2 microns, or much smaller or larger.
The conductive proof mass 2410 includes a slot 2420. In this example, the edge 2425 of slot 2420 is suspended over electrodes 2405a and 2405b when the accelerometer 2400 is stationary. Slots 2420 may extend through the conductive proof mass 2410 partially or completely, depending on the mounting. The capacitances of the various conductive proof masses 2410 with different slot depths are shown in FIG. 32 and will be described below. An accelerometer having the general configuration of the accelerometer 2400 can be referred to herein as a stacked lateral overlap transducer (SLOT) based accelerometer.
The positive x-direction acceleration causes the conductive proof mass 2410 to translate laterally and shift the position of slot 2420. The more slots 2420 placed above the electrode 2405a, the more air and less conductive material will be placed near the electrode 2405a. As a result, the capacitance at the electrode 2405a is reduced by ΔC. Conversely, the fewer slots 2420 placed above the electrode 2405b, the less air and more conductive material will be placed closer to the electrode 2405b. As a result, the capacitance at the electrode 2405b increases by ΔC. The translation of the conductive proof mass 2410 causes a change in overlap, resulting in a corresponding in-plane acceleration differential output signal proportional to 2ΔC.
FIG. 25 shows an example of an accelerometer for measuring off-plane acceleration. In this example, the accelerometer 2500 includes a conductive proof mass 2510 that is attached to the substrate 2401 by a support 2515 and a torsion bend 2525. The support 2515 and the torsionally bent portion 2525 form a pivot 2530. Moment imbalance can be achieved, for example, by drilling one side of the conductive proof mass 2510 to make the conductive proof mass 2510a different in width and / or length on either side of the support 2515, or. These combinations can occur on either side of the support 2515. Moment imbalance also forms one side of the conductive proof mass 2510 from a material that is relatively denser or less dense than the material used to form the other side of the conductive proof mass 2510. It can also occur. However, such implementations can be relatively complex to manufacture. In this example, the moment imbalance is caused by the formation of perforations 2520 in the side 2510b.
Negative z-direction acceleration causes the conductive proof mass 2510 to rotate clockwise, increasing the gap between the electrode 2405c and the conductive proof mass 2510, and the gap between the electrode 2405d and the conductive proof mass 2510. To reduce. As a result, the capacitance at the electrode 2405c decreases by ΔC, and the capacitance at the electrode 2405d increases by ΔC. The result is a corresponding out-of-plane acceleration output signal proportional to 2ΔC.
FIG. 26A shows an example of an accelerometer for measuring in-plane acceleration. The accelerometer 2400a may have an overall x and y dimension on the order of a few millimeters. In some implementations, the accelerometer 2400a may have x and y dimensions of less than 1 millimeter.
In this example, the accelerometer 2400a includes a conductive proof mass 2410a disposed around the inner frame 2610a. The conductive proof mass 2410a includes a slot 2420a extending substantially along the first axis, which is the x-axis in this example. The conductive proof mass 2410a also includes a slot 2420b extending substantially along a second axis, which is the y-axis in this example. As described in more detail below, the conductive proof mass 2410a is constrained to move substantially along the x-axis, y-axis, or combination of x-axis and y-axis.
The inner frame 2610a comprises a substantially stationary portion 2612a connected to the substrate via an anchor 2605. The anchor 2605 is disposed below the plane shown in FIG. 26A. Here, the stationary portion 2612a also includes a pair of stress separation slits 2625 that extend substantially along the y-axis in this example. The stress separation slit 2625 can reduce the sensitivity of acceleration measurements to stress in membranes, substrates, and / or packages. The inner frame 2610a also includes a movable portion 2614a. The bent portion 2615a connects the movable portion 2614a to the conductive proof mass 2410a. The bent portion 2620a connects the movable portion 2614a to the stationary portion 2612a. The bend may be a folded bend that can increase bending compliance. In some embodiments, the bend may be a meandering bend. In this example, the inner frame 2610a includes a plurality of slots 2420a. As shown in FIG. 26A, additional slots 2420a may be formed within the proof mass 2410a.
FIG. 26B shows an example of the response of the accelerometer of FIG. 26A to acceleration along the first axis. Here, the conductive proof mass 2410a of the accelerometer 2400a is moving along the x-axis. Slot 2420b shifts along the x-axis, which causes a change in capacitance to be detected by the corresponding electrode 2405 as described above with reference to FIG. The electrode 2405 is disposed on a substrate 2401 (not shown) below the plane shown in FIG. 26B. The special relationship between the accelerometer 2400a, the substrate 2401 and the electrode 2405 is shown in FIG. 28, which will be described below. The bent portion 2615a deformed in FIG. 26B can move the conductive proof mass 2410a along the x-axis while the inner frame 2610a remains substantially stationary. In this implementation, the bent portion 2620a is hardly deformed. The capacitance associated with slot 2420a is almost unchanged under the x-direction translation of the proof mass.
FIG. 26C shows an example of the response of the accelerometer of FIG. 26A to acceleration along the second axis. Here, the conductive proof mass 2410a and the movable portion 2614a of the inner frame 2610a move along the y-axis. Slot 2420a shifts along the y-axis, which causes a change in capacitance to be detected by the corresponding electrode 2405 as described above. The bent portion 2620a deformed in FIG. 26C can move the movable portion 2614a together with the conductive proof mass 2410a along the y-axis. In this implementation, the bent portion 2615a is hardly deformed. The capacitance associated with slot 2420b is almost unchanged under the y-direction translation of the proof mass 2410a and the moving portion 2614a.
FIG. 26D shows an example of an accelerometer for measuring in-plane and out-of-plane acceleration. In this example, the accelerometer 2400b includes a conductive proof mass 2410b with an extension 2670. Due to the extension 2670, the portion of the conductive proof mass 2410b on the side of the extension 2670 is made larger than the portion of the conductive proof mass 2410b on the other side of the anchor 2605. The extra mass of the extension 2670 causes an imbalance of the types of moments described above with reference to FIG. 25, thereby making the accelerometer 2400b sensitive to acceleration along the z-axis. Can be done.
There is another difference between the accelerometer 2400b and the accelerometer 2400a described in the previous drawing. In the implementation shown in FIG. 26D, the stationary portion 2612b of the inner frame 2610b is relatively smaller than, for example, the stationary portion 2612a of the inner frame 2610a in the implementation shown in FIG. 26A. With this configuration, the slot 2420a can occupy a relatively large area of the inner frame 2610b, resulting in increased sensitivity to measure acceleration along the y-axis. Further, in the implementation shown in FIG. 26D, the bends 2615b and 2620b are meandering bends.
FIG. 27 shows an example of an accelerometer for measuring off-plane acceleration. The z-axis accelerometer 2500a is configured to operate according to the general principles of the accelerometer 2500 described above with reference to FIG. Here, the conductive proof mass 2510 is attached to the base material 2401 (not shown) by the anchor 2515a forming the pivot 2530a and the pair of torsionally bent portions 2525a. Moment imbalance occurs on either side of the pivot 2530a by making the side 2510b of the conductive proof mass 2510 relatively smaller than the other side 2510a.
The electrodes 2405c and 2405d are arranged in a plane below the accelerometer 2500a on the substrate 2401, as shown in FIGS. 25 and 28. In this example, the electrode 2405c is inserted from the edge of the side portion 2510b of the conductive proof mass 2510 by a distance of 2710. Due to the acceleration along the z-axis, the conductive proof mass 2510 rotates around the y-axis and around the pivot 2530a, as described above with reference to FIG. For example, the acceleration along the z-axis causes the side portion 2510a of the conductive proof mass 2510 to rotate in the negative z direction (toward the electrode 2405d) and the side portion 2510b in the positive z direction (direction away from the electrode 2405c). To) rotate. As described above with reference to FIG. 25, this rotation of the conductive proof mass 2510 around the pivot 2530a reduces the capacitance at electrode 2405c by ΔC and static electricity at electrode 2405d. The capacitance increases by ΔC. The result is a corresponding out-of-plane acceleration output signal proportional to 2ΔC. The change in capacitance at the electrodes 2405c and 2405d can depend on various factors such as the magnitude of the electrodes 2405c and 2405d and the magnitude of acceleration along the z-axis. In some implementations, the change in capacitance at the electrodes 2405c and 2405d may be in the range of a few femtrads.
FIG. 28 shows an example implementation of an alternative accelerometer for measuring in-plane and out-of-plane acceleration. In this example, the 3-axis accelerometer 2800 is a combination of a z-axis accelerometer 2500a (FIG. 27) and an xy-axis accelerometer 2400a (FIGS. 26A-C). In some implementations, the accelerometer 2800 can have a length of 2805 and a width of 2810 on the order of a few millimeters or less. For example, the length 2805 may be in the range 0.5 to 5 mm, while the width may be in the range 0.25 to 3 mm.
The electrodes 2405c to f2 are arranged on the region of the base material 2401 on which the manufactured accelerometer 2500a and the accelerometer 2600a are adjacent. Electrodes 2405c and 2405d may be configured to measure the response of the accelerometer 2500a to z-axis acceleration. The electrode 2405e can be configured to detect the acceleration of the accelerometer 2600a along the x-axis, while the electrode 2405f can be configured to detect the acceleration of the accelerometer 2600a along the y-axis. ..
FIG. 29 shows an example of another alternative accelerometer implementation for measuring in-plane and out-of-plane acceleration. In this example, the accelerometer 2400c includes a conductive proof mass 2410c disposed within the separation frame 2910. The bent portion 2615c can connect the conductive proof mass 2410c to the separation frame 2910 and translate the conductive proof mass 2410c along the x-axis. Electrodes disposed on adjacent substrates (not shown) can detect acceleration along the x-axis in response to changes in capacitance caused by the movement of one or more slots 2420b. it can.
The separation frame 2910 can be arranged in the anchoring frame 2915. The bent portion 2620c can connect the separation frame 2910 to the anchoring frame 2915 and move the separation frame 2910 and the conductive proof mass 2410c along the y-axis. Electrodes disposed on adjacent substrates (not shown) can detect acceleration along the y-axis in response to changes in capacitance caused by the movement of one or more slots 2420a. it can.
The pivot 2515b can connect the anchoring frame 2915 to the substrate 2401 (not shown in FIG. 29). The moment imbalance is caused by making most of the accelerometer 2600c on one side of the pivot 2515b. When acceleration occurs along the z-axis, the accelerometer 2600c rotates toward or away from the electrode 2405g on the substrate 2401. This rotation increases or decreases the capacitance at the electrode 2405g by ΔC, as described above with reference to FIGS. 25 and 27. The rotation results in a corresponding out-of-plane acceleration output signal proportional to ΔC. The stress separation slit 2720a can serve to reduce the sensitivity of the acceleration measurement to stress in the membrane, substrate, and / or package.
Some accelerometer implementations are plated stoppers that limit the movement of the proof mass and / or bends to protect the proof mass and adjacent structures from over-stroke and sticking that can cause damage. It is characterized by having. For example, referring to FIG. 28, it can be seen that a strut can be made on the substrate 2401 around the accelerometer 2400a to limit the x and / or y displacement of the accelerometer 2400a. A similar structure can be formed under the accelerometer 2500a to prevent the accelerometer 2500a from coming into contact with the electrodes 2405c, 2405d, or the substrate 2101. Such implementations thereby improve reliability and impact resistance. These features can be made by the same photolithography and plating process used to make proof masses and bends.
FIG. 30 is a graph showing the relative sensitivity made available by the various materials that can be used to form an accelerometer or gyroscope. The relative sensitivities shown in Graph 3000 are based on theoretical comparisons of sensors with the same topology but different materials, normalized to the sensitivities of sensors made from silicon. From curve 3005, assuming that the dimensions of the two devices are the same for devices with the same design, using a plated nickel alloy as the structural material is approximately more than using silicon as the structural material. It can be seen that three times the sensitivity can be obtained. The data points in Graph 3000 are based on the assumption that the same material is used for the proof mass and bends. Wave speed is defined as the square root of (Young's modulus / mass density). When Young's modulus is low, the displacement with respect to a given inertial force is large, but when the mass density is high, the inertial force with respect to a given acceleration is large.
FIG. 31A shows an example of a comb-tooth accelerometer. The comb-tooth accelerometer is also known as an alternating mating condenser accelerometer or a comb-tooth drive accelerometer. The comb-tooth accelerometer 3100 includes members 3102a and 3102b, on which electrodes "comb-tooth" 3105a and 3105b are arranged, respectively. In this example, the member 3102a is a movable member constrained to move substantially along the x-axis. As the member 3102a moves toward the stationary member 3102b, the overlap between the comb teeth 3105a and 3105b increases. Therefore, as a result of the movement of the member 3102a in the positive x direction, the capacitance between the comb teeth 3105a and 3105b increases.
FIG. 31B is a graph showing the performance of a comb-tooth drive and SLOT-based accelerometer. The relative effect of changing the height of the sacrificial gap and the thickness of the proof mass on the sensitivity of the capacitive SLOT and comb-tooth-based accelerometers can be observed in FIG. 31B. Curve 3115 corresponds to the comb-tooth-based accelerometer of insertion FIG. 3155, while curve 3120 corresponds to the comb-tooth-based accelerometer of insertion FIG. 3160. Insertion views 3155 and 3160 show a cross-sectional view of a comb-tooth-based accelerometer, with comb teeth shown on the substrate. Insertion 3155 and 3160 also show examples of dimensions and spacing of comb teeth 3105a and 3105b. Curve 3125 corresponds to the SLOT-based accelerometer of insertion FIG. 3165, and curve 3130 corresponds to the SLOT-based accelerometer of insertion FIG. 3170.
The resulting graph 3110 shows that the disclosed SLOT transducer topology can enable high sensitivity without the need for high aspect ratio structural features. In addition, the implementation of SLOT-based accelerometers provides greater efficiency than comb-tooth drive devices with large features. The magnitude of the smallest lateral features shown on the horizontal axis refers to the width and spacing of the comb teeth for comb-toothed accelerometers and the width of slots for SLOT-based accelerometers. A particular scale factor on the vertical axis refers to the change in capacitance per unit area of the accelerometer that occurs in response to a 100 nm lateral translation of the proof mass. For the size of the relatively large minimum lateral features (where the size of the minimum lateral features is greater than 6 microns), the static per unit area provided by both examples of SLOT-based accelerometers. The change in capacitance is greater than that of a comb-tooth accelerometer. For SLOT-based accelerometers with a 1 micron gap, the change in capacitance per unit area is large for the magnitude of all the minimum shown lateral features.
FIG. 32 is a graph showing the performance of SLOT-based accelerometers with slots of various depths, including through slots, which completely penetrate the proof mass. Curves 3205, 3210, 3215, and 3220 correspond to inset 3250, where the slots are partially recessed into the proof mass, where the proof mass includes a blind slot. Curves 3205, 3210, 3215, and 3220 correspond to the increasing depth of such blind slots. Curve 3225 corresponds to inset FIG. 3260, where the proof mass includes a through slot.
As shown in FIG. 32, the performance of some SLOT-based in-plane accelerometers can be improved by replacing through slots in the proof mass with blind slots. The required plating aspect ratio (slot height-to-width ratio) can be reduced by replacing the slot that completely penetrates the proof mass with a slot that does not completely penetrate the proof mass. By increasing the surface density of the proof mass, the sensitivity to a given sensor area can be improved. Therefore, the sensitivity of the accelerometer to a given area can be improved even if the slot is relatively narrow. Simulation results show that there is essentially no loss of sensitivity (ΔC / Δx) when the air-filled groove is at least twice the depth of the gap between the proof mass and the underlying electrode. Was judged. Sensitivity decreases as the dielectric constant of the optional groove-filled dielectric increases.
FIG. 33 shows an example of a flow diagram outlining the steps of Method 3300 involving the use of one or more gyroscopes or accelerometers in a mobile device. Some components of such mobile devices will be described below with reference to FIGS. 47A and 47B. These mobile devices may include a display, a processor configured to communicate with the display, and a memory device configured to communicate with the processor. The processor may be configured to process the image data.
However, the processor (and / or another such component or device) may also be configured to communicate with one or more accelerometers and / or gyroscopes. The processor may be configured to process and analyze gyroscope data and / or accelerometer data. In some implementations, the mobile device may include an accelerometer and a gyroscope that collectively include inertial sensors that respond to motion corresponding to 6 degrees of freedom, including 3 linear degrees of freedom and 3 rotational degrees of freedom.
At block 3301, the processor can control the display to perform normal display operations. When angular rotation or linear acceleration is detected (block 3305), gyroscope data and / or accelerometer data may be fed to the processor (block 3310). At block 3315, the processor determines whether to respond to gyroscope data and / or accelerometer data. For example, the processor may decide not to respond at all unless the gyroscope data and / or the accelerometer data indicate that the angular or linear acceleration is greater than a predetermined threshold level of acceleration. If the gyroscope data and / or the accelerometer data do not show a value greater than a predetermined threshold, the processor will perform normal display operations, for example, as described above with reference to FIGS. 2-5B. The display can be controlled according to the procedure to do.
However, if the gyroscope data and / or the accelerometer data show a value greater than a given threshold (or if the processor determines that a response is required according to another criterion), the processor will at least partially Controls the display according to gyroscope data and / or accelerometer data (block 3320). For example, the processor can control the state of the display according to the accelerometer data. The processor may be configured, for example, to determine whether the accelerometer data indicates that the mobile device has been or is about to drop. The processor may be further configured to control the state of the display to prevent or mitigate damage when the accelerometer data indicates that the display has been dropped or is about to drop.
If the accelerometer data indicates that the mobile device has been dropped, the processor may also store such accelerometer data in memory. The processor may also be configured to store time data associated with the accelerometer data when the accelerometer data indicates that the mobile device has been dropped. For example, mobile devices can also include network interfaces. The processor may be configured to retrieve time data from a time server via a network interface. Alternatively, the mobile device may include an internal clock.
Alternatively, or in addition, the processor may be configured to control the game's display according to accelerometer data and / or gyroscope data. For example, accelerometer data and / or gyroscope data can be obtained as a result of interaction between the user and the mobile device while playing a game. The interaction between the users may be, for example, a response to a game image presented on the display.
Alternatively, or in addition, the processor may be configured to control the orientation of the display according to gyroscope data or accelerometer data. The processor may, for example, determine that the user has rotated the mobile device in the orientation of the new device and control the display according to the orientation of the new device. The processor may determine that the image displayed when different parts of the mobile device are facing up should reorient according to the rotation or orientation of the mobile device.
The processor can then determine if process 3300 continues (block 3325). For example, the processor may determine whether the user has turned off the device, whether the device should go into "sleep mode" due to no user input within a predetermined time, and so on. If process 3300 continues, process 3300 may return to block 3301. Otherwise, the process terminates (block 3330).
Next, an example of a process for manufacturing an accelerometer and related devices will be described with reference to FIGS. 34-40C. FIG. 34 shows an example of a flow chart showing an outline of a method for manufacturing an accelerometer. 35A-39B pass through the substrate, parts of the accelerometer, and some parts of the structure for packaging and electrically connecting the accelerometer at various stages of the fabrication process. An example of a cross section is shown. 40A-40C show examples of cross-sectional views of various blocks in the process of forming devices including MEMS dies and integrated circuits.
Some operations of Method 3400 will be described with reference to FIG. The process flow of Method 3400 allows the first set of operations to be performed in equipment capable of forming, for example, a MEMS device (or similar device) on a large area substrate such as a large area glass panel. .. Such equipment shall be a 5th generation production line capable of manufacturing devices on a 1100 mm x 1300 mm substrate or a 6th generation production line capable of manufacturing devices on a 1500 mm x 1850 mm substrate. be able to.
Therefore, in block 3401, pass-through metallization and accelerometer electrodes are formed on a large area substrate, which in this example is a large area glass substrate. At block 3405, multiple features for the accelerometer and related structures are formed on the large area substrate. In some implementations, hundreds of thousands or more of such device features can be formed on a single large area substrate. In some implementations, accelerometers and gyroscopes can have die sizes ranging from less than about 1 mm on a side to 3 mm on a side, or larger. Related structures may include, for example, electrodes, electrical pads, capsule encapsulation structures (seal ring structures, etc.) and the like. An example of such a process will be described below with reference to FIGS. 35A-38D.
In block 3410 of FIG. 34, a partially prefabricated accelerometer and other devices are prepared for subsequent electroforming process execution. As described below with reference to FIG. 38A, the block 3410 is a high aspect ratio lithography material for the deposition of seed layers such as nickel, nickel alloys, copper, or chromium / gold, and subsequent plating. Can be accompanied by the formation of a thick layer of.
According to Method 3400, the accelerometer and other structures are only partially made on a large area glass substrate. One of the reasons for this partial fabrication is that there are currently only a few plating facilities capable of processing even the size of 4th or 5th generation substrates. However, there are many plating facilities that can handle smaller substrates such as second generation substrates (350 mm x 450 mm). Therefore, at block 3415, the large area glass substrate, of which the accelerometer and other structures have been partially manufactured, is divided into several subpanels for the electroforming process.
At block 3420, an electroforming process is performed. These processes are described below with reference to FIG. 38B. The electroforming process, in some implementations, may involve the steps of depositing most of the metal in the proof mass, frame, anchors, and other structures of each accelerometer. The high aspect ratio lithography material can then be removed and the sacrificial material removed to release the proof mass and frame of each accelerometer (block 3425). Examples of these operations will be described below with reference to FIGS. 38C-38D.
Block 3430 involves optional accelerometer encapsulation and even piece cutting (eg by dicing) and other processes. In some implementations, the method 3400 may involve attaching the integrated circuit to an encapsulated accelerometer, forming an electrical connection with another substrate, molding, and cutting pieces. These processes are described below with reference to FIGS. 39A-40C.
Next, with reference to FIG. 35A, the process of manufacturing the accelerometer will be described in more detail. FIG. 35A shows a cross section through one small portion (eg, on the order of a few millimeters) of a large area substrate 3505, which is a glass substrate in this example. At this stage, a metallization layer 3510 such as a chromium (Cr) / gold (Au) layer is formed on the large-area substrate 3505. Instead of Cr and / or Au, aluminum (Al), titanium (Ti), tantalum (Ta), tantalum nitride (TaN), platinum (Pt), silver (Ag), nickel (Ni), doped silicon, or TiW. Other conductive materials such as one or more of them may be used.
Patterning and etching of the metallization layer 3510 can then be performed, for example, as shown in FIG. 35B. In this example, the central portion of the metallization layer 3510 is patterned and etched to form the electrode region 3510b, which forms part of the accelerometer. Accelerometers and / or other devices can be encapsulated, for example, in a cavity formed between metallization regions 3510a. The metallization region 3510a can form a "pass-through" electrical connection from the inside of such a packaging to the outside of the packaging. The metallization region 3510a can also form an electrical connection between these devices and other devices outside the packaging.
FIG. 35C shows the dielectric layer 3515 formed on the metallization layer 3510. Then SiO<sub>2</sub>, SiON, Si<sub>3</sub>N<sub>4</sub>, Or another suitable dielectric, patterning and etching of the dielectric layer 3515 to form openings 3605a, 3605b, 3605c, and 3605d through the dielectric layer 3515 to the metallization region 3510a. Etching (see FIG. 36A).
At the stage shown in FIG. 36B, the metallization layer 3610 is formed on the dielectric layer 3515 and in the openings 3605a, 3605b, 3605c, and 3605d. The metallization layer 3610 can be formed from a suitable conductive material such as Cr, Au, Al, Ti, Ta, TaN, Pt, Ag, Ni, doped silicon, or TiW.
Patterning and etching of the metallization layer 3610 is then performed as shown in FIG. 36C. As a result, the lead regions 3615a and 3615b are exposed on the surface of the dielectric layer 3515 and are configured to be electrically connectable to the metallization region 3510a. Similarly, accelerometer base regions 3625a and 3625b (which in some implementations can be anchor regions) remain on the surface of the dielectric layer 3515 and are configured to be electrically connected to the metallization region 3510a. To. The sealing regions 3620a and 3620b may also be on the surface of the dielectric layer 3515, but are not electrically connected to the metallization region 3510a. At the stage shown in FIG. 36D, the dielectric layer 3515 has been removed from the electrode region 3510b.
FIG. 37A shows the stage after the sacrificial layer 3705 is formed. In this example, the sacrificial layer 3705 is formed from MoCr, but other materials such as Cu may also be used for the sacrificial layer 3705. FIG. 37B shows the steps of the process after patterning and etching of the sacrificial layer 3705. At this stage, the lead regions 3615a and 3615b, the seal ring regions 3620a and 3620b, and the accelerometer base regions 3625a and 3625b are exposed. A portion of the sacrificial layer 3705 remains above the electrode region 3510b.
Partially manufactured accelerometers and related structures are then prepared for electroforming. In some implementations, the plating seed layer can be deposited prior to the electroforming process as described above. The seed layer is formed, for example, by a sputtering process and can be formed from nickel, nickel alloys (such as nickel iron, nickel cobalt, or nickel manganese), copper, or chromium / gold. As shown in FIG. 38A, a thick layer of high aspect ratio lithography material 3805, such as a photoresist, is then formed over the region where the metal is not electroformed. The high aspect ratio lithography material 3805 can be selectively exposed through a photomask to form a mold that is developed to define the shape of the metal structure that is subsequently plated through the mold in the electroforming process. According to some implementations, the layer of high aspect ratio lithography material 3805 is tens of microns thick, for example 10 to 50 microns or more. In other implementations, the layer of high aspect ratio lithography material 3805 can be thickened or thinned, for example, depending on the desired configuration of the accelerometer. The high aspect ratio lithography material 3805 is a variety of commercially available high aspect ratio lithography materials such as KMPR® photoresist provided by Micro-Chem or MTF® WBR2050 photoresist provided by DuPont®. It can be any of the following.
A thick layer of high aspect ratio lithography material 3805 can be formed over the lead regions 3615a and 3615b, the seal ring regions 3620a and 3620b, and selected regions of the still remaining sacrificial layer 3705 portion. The selected region is the region of the sacrificial layer 3705 that is not electroformed. The gap 3810 exposes the accelerometer base regions 3625a and 3625b, as well as other regions above the sacrificial layer 3705.
Large area substrates with the above structures partially formed can be divided into several smaller subpanels prior to the electroforming process. In this example, the large area glass substrate is scribed and cracked, but the large area glass substrate can be divided by a suitable method such as sewing or dicing.
FIG. 38B shows the apparatus after the thick metal layer 3815 is electroformed in the region between the structures formed by the high aspect ratio lithography material 3805. In some implementations, the thick metal layer 3815 can be tens of microns thick, for example 5 to 50 microns thick. In other implementations, the thick metal layer 3815 can be thicker or thinner, for example, depending on the desired configuration of the accelerometer. In this example, the thick metal layer 3815 is formed from a nickel alloy, but in other implementations the thick metal layer 3815 is plated nickel, electroless nickel, CoFe, Fe-based alloys, NiW, NiRe, PdNi. , PdCo, or other electrocast material. In some implementations, a thin gold layer can be deposited on the thick metal layer 3815 solely for corrosion resistance.
FIG. 38C shows the film formation of the thick metal layer 3815 and the removal of the high aspect ratio lithography material 3805. Removing the high aspect ratio lithography material 3805 exposes the lead regions 3615a and 3615b, the seal ring regions 3620a and 3620b, and selected regions of the sacrificial layer 3705. The sacrificial layer 3705 is then etched by, for example, a wet etching process or a plasma etching process, and XeF is applied to the sacrificial layer of molybdenum or molybdenum, for example.<sub>2</sub>, Or a copper etchant for the copper sacrificial layer, can be used to release the movable region 3840 of the accelerometer 3850 (see Figure 38D). Wet etching of Cu, which selectively etches Cu without etching nickel alloys, Cr, or Au, is used, for example, by using a combination of hydrogen peroxide and acetic acid, or commonly used in the printed circuit board industry. It can be performed by using an ammoniacal Cu etchant. The movable area 3840 may include, for example, a proof mass and / or a frame as described above. During the operation of the accelerometer 3850, the movement of the gap 3860 can induce a change in capacitance detected by the electrode 3510b.
FIG. 39A shows the results of the subsequent encapsulation process by way of example. Here, covers 3905 are attached to the seal ring regions 3620a and 3620b to encapsulate the accelerometer 3850. In some implementations, the cover 3905 may be a glass cover, a metal cover, and the like. The cover 3905 can be one of a plurality of covers formed on another substrate. In this example, the cover includes a plurality of cover portions 3905a capable of forming an enclosure around the accelerometer 3850. In this example, the cover portion 3905a is connected by a cover area 3905b. The cover portion 3905 can be attached to the sealing regions 3620a and 3620b, for example by a soldering or eutectic bonding process, or by an adhesive such as epoxy. In some implementations, the cover portion 3905a may completely surround the accelerometer 3850, whereas in other implementations the cover portion 3905a may only partially surround the accelerometer 3850. In this example, the lead regions 3615a and 3615b remain outside the region encapsulated by the cover 3905, which allows easy electrical connection to the accelerometer 3850.
In some implementations, a portion of cover 3905 may be removed. For example, at least a portion of the cover area 3905b can be removed (eg, by a dicing process) to facilitate access to the lead areas 3615a and 3615b (see Figure 39B). The thickness of the resulting encapsulated accelerometer 3910 can also be reduced if necessary. In this example, a chemical mechanical flattening (CMP) process is used to thin the substrate 3505. In some implementations, the overall thickness of the encapsulated accelerometer 3910 can be reduced to less than 1 mm, more specifically to 0.7 mm or less. The resulting encapsulated accelerometer 3910 can be cut into pieces, for example by dicing.
FIG. 40A shows a device formed by combining a capsuled accelerometer 3910 and an integrated circuit 4005 and attaching both devices to another substrate 4015, which is a printed circuit board in this example. In this illustration, the integrated circuit 4005 is attached to an accelerometer 3910 encapsulated by a soldering process (see Soldering Layer 4010). Similarly, the encapsulated accelerometer 3910 is attached to the substrate 4015 by a soldering process (see Soldering Layer 4020). Alternatively, the integrated circuit 4005 can be attached to the accelerometer 3910 with an adhesive such as epoxy.
FIG. 40B shows a wire bond 4025 used to electrically connect between the integrated circuit 4005 and the encapsulated accelerometer 3910, and between the encapsulated accelerometer 3910 and the substrate 4015. Shown. In an alternative implementation, the encapsulated accelerometer 3910 may include vias passing through a substrate 3905 configured to form an electrical connection by surface mounting.
At the stage shown in FIG. 40C, the integrated circuit 4005 and the encapsulated accelerometer 3910 may be a dielectric material such as a polymer, an injection molding material such as a liquid crystal polymer (LCP), SiO2, or SiON. , Encapsulated with protective material 4030. In this example, the substrate 4015 includes an electrical connector 4035 configured to be mounted on a printed circuit board or other device. Therefore, the resulting package 4040 is configured for use in surface mount technology.
Next, an example of a process for manufacturing a gyroscope and related devices will be described with reference to FIGS. 41 to 46B. FIG. 41 shows an example of a flow diagram showing an outline of the process of manufacturing the gyroscope and related structures. 42A-46B are structures for packaging and electrically connecting the substrate, parts of the gyroscope, and gyroscope at various stages of the process outlined in FIG. 41. An example of a cross section through several parts of an object is shown.
Some operations of Method 4100 will be described with reference to FIG. The process flow of Method 4100 allows the first set of operations to be performed on equipment capable of forming MEMS and similar devices on large area substrates such as large area glass panels. Such equipment can be, for example, a 5th generation production line or a 6th generation production line. Therefore, in block 4105, a number of gyroscope features and related structures are formed on the large area substrate. For example, it is possible to fabricate hundreds of thousands or more such structures on large area substrates. Related structures may include, for example, electrodes, electrical pads, capsule encapsulation structures (such as seal ring structures) and the like. An example of such a process will be described below with reference to FIGS. 42A-44B.
In block 4110 of FIG. 41, a partially prefabricated gyroscope and other devices are prepared for subsequent electroforming process execution. As described below with reference to FIGS. 44B and 44C, block 4110 may involve the formation of a plating seed layer and the formation of a thick layer of high aspect ratio lithography material such as a photoresist.
According to Method 4100, the gyroscope and other structures are only partially made on a large area glass substrate. One of the reasons for this partial fabrication is that there are currently only a few plating facilities capable of processing 4th or 5th generation substrate sizes. However, there are many plating facilities that can handle smaller substrates, such as second generation substrates. Therefore, in block 4115, the large area glass substrate, of which the gyroscope and other structures have been partially manufactured, is divided into several subpanels for the electroforming process.
At block 4120, an electroforming process is performed. These processes are described below with reference to FIG. 45A. The electroforming process, in some implementations, may involve the steps of depositing most of the metal in the proof mass, frame, and other structures of each gyroscope. The high aspect ratio lithography material can then be removed and the sacrificial material removed to release the proof mass and frame of each gyroscope (block 4125). Examples of these operations will be described below with reference to FIGS. 45B-46A.
Block 4130 may involve gyroscope encapsulation and even piece cutting (eg, by dicing) and other processes. These processes are described below with reference to FIG. 46B.
FIG. 42A shows a cross section through the large area substrate 4200, which is a glass substrate in this example. The large area glass substrate 4200 has a metallization layer 4205, which is a Cr / Au layer in this example, which is formed on the large area glass substrate 4200. Instead of chromium and / or gold, use other conductive materials such as nickel alloys with Al, TiW, Pt, Ag, Ni, Co, Fe, or Mn, Ti / Au, Ta / Au, or doped silicon. Can be done. Patterning and etching of the metallization layer 4205 can be performed, for example, as shown in FIG. 42A. The metallization layer 4205 can be used to form a "pass-through" electrical connection from the inside of the seal ring to the outside of the seal ring. The gyroscope and / or other device can be sealed, for example, in a cavity inside the packaging. Metallization layer 4205 also allows the formation of electrical connections between these devices and other devices outside the packaging.
FIG. 42B shows SiO formed on the metallization layer 4205.<sub>2</sub>, SiON, or other dielectric material, such as the dielectric layer 4215. The dielectric layer 4215 can then be etched to form openings 4220a, 4220b, and 4220c that pass through the dielectric layer 4215 and reach the metallization layer 4205.
FIG. 42C shows the stage after the sacrificial layer 4225 is formed. In this example, the sacrificial layer 4225 is formed from MoCr, but other materials such as copper or deposited amorphous or polycrystalline silicon can also be used for the sacrificial layer 4225. FIG. 42D shows the region of the sacrificial layer 4225 that remains after patterning and etching of the sacrificial layer 4225.
FIG. 43A shows the stage after the dielectric layer 4305 is formed on the sacrificial layer 4225. Further, the dielectric layer 4305 has been patterned and etched. In FIG. 43B, the metallization layer 4310 is then filmed, patterned and etched. In this example, the metallization layer 4310 is in contact with the metallization layer 4205 within the anchor region 4315.
FIG. 43C shows an example of a piezoelectric film 4320 that has been film-formed, patterned, and etched. In this example, the piezoelectric film 4320 is formed from aluminum nitride, but other piezoelectric materials such as ZnO or lead zirconate titanate (PZT) can be used. In FIG. 43D, the metallization layer 4325 is formed, patterned and etched. Here, the metallization layer 4325 forms the uppermost layer of the electrode 4330, which can be a piezoelectric drive electrode or a piezoelectric sensing electrode, depending on the mounting.
FIG. 44A shows an example of a dielectric layer 4405 that has been film-formed, patterned and etched. At this stage, the dielectric layer 4405 is removed from most of the regions shown in FIG. 44A, except for the region adjacent to the anchor region 4315 and the electrode 4330.
At this stage, partially prefabricated gyroscope components and related structures can be prepared for one or more electroforming processes. FIG. 44B shows an example of a plated seed layer 4405 such as nickel, nickel alloy, copper, or chromium / gold that can be deposited before the electroforming process. As shown in FIG. 44C, after the plating seed layer 4405 is formed, a thick layer of high aspect ratio lithography material 4410, such as a thick photoresist, is formed between the proof mass region 4415 and the frame region 4420. can do. According to some implementations, the layer of high aspect ratio lithography material 4410 is tens of microns thick, for example 40 to 50 microns thick. In other implementations, the layer of high aspect ratio lithography material 4410 can be thickened or thinned, for example, depending on the desired configuration of the gyroscope. The high aspect ratio lithography material 4410 is a variety of commercially available high aspect ratio lithography materials such as KMPR® photoresist provided by Micro-Chem or MTF® WBR2050 photoresist provided by DuPont®. It can be any of the following. A thick layer of high aspect ratio lithography material 4410 can also be formed between the frame area 4420 and the seal ring area 4425, and further between the seal ring area 4425 and the electrical pad area 4430. The high aspect ratio lithography material 4410 can define the shape of an electroformed metal structure that is exposed, developed and subsequently formed using a suitable photomask.
As pointed out above, large area substrates with the above structures partially formed can be subdivided into smaller subpanels prior to the electroforming process. In this example, the large area glass substrate is scribed and cracked, but the large area glass substrate can be divided in a suitable way (such as by dicing).
As shown in FIG. 45A, a thick metal layer 4505 can be electroformed in the region between the high aspect ratio lithography materials 4410. In this example, the thick metal layer 4505 is formed from a nickel alloy, but in other implementations the thick metal layer 4505 is nickel or cobalt iron, nickel tungsten, palladium nickel, or other plating such as palladium cobalt. It can be formed from metal alloys. Here, a thin gold layer 4510 is formed on the thick metal layer 4505 solely due to the corrosion resistance of the thick metal layer 4505. The gold layer 4510 can also be formed by an electroforming process.
As shown in FIG. 45B, after these metal layers have been deposited, the high aspect ratio lithography material 4410 can be removed from between the regions where the thick metal layer 4505 is deposited. Removing the high aspect ratio lithography material 4410 exposes a portion of the seed layer 4405 that can then be removed by etching to expose the sacrificial material 4225. FIG. 46A shows a sacrificial material 4225 that is etched, for example, by a wet etching process or a plasma etching process to release the proof mass 4605 and the frame 4610.
FIG. 46B shows the results of the encapsulation process by way of example. Here, a cover 4615 is attached to the seal ring 4620 to encapsulate the gyroscope 4625. In some implementations, the cover 4615 may be a glass cover, a metal cover, and the like. The cover 4615 can be attached to the seal ring 4620, for example by a soldering process or an adhesive such as epoxy. The electrical pad 4630 remains outside the area encapsulated by the cover 4615, which allows it to be easily electrically connected to the gyroscope 4625 via the metallization layer 4205.
The gyroscope 4625 produced as a result of the manufacturing process of this example may correspond, for example, to the drive frame x-axis gyroscope 1200 shown in FIG. 12 and described above. The anchor 4635 of the gyroscope 4625 can correspond to the central anchor 1205 shown in FIG. The electrode 4330 may correspond to the drive electrode 1215 shown in FIG. The proof mass 4605 can correspond to the drive frame 1210 of FIG. 12, while the frame 4610 can correspond to the proof mass 1220 of FIG.
As another example, the gyroscope 4625 may correspond to the z-axis gyroscope 2000 shown in FIG. 20A and subsequent figures. The anchor 4635 of the gyroscope 4625 can correspond to the central anchor 2005 shown in FIG. 20A and subsequent figures. The electrode 4330 may correspond to one of the sensing electrodes 2020a-d. The proof mass 4605 can correspond to the sensing frame 2010 of FIG. 20A, while the frame 4610 can correspond to the drive frame 2030 of FIG. 20A.
Although the process of making gyroscopes and accelerometers is described separately, many both types of devices may be formed on the same large area substrate if necessary. The accelerometers described herein can be formed, for example, by using a subset of the processes for making gyroscopes. For example, the accelerometers described herein do not require a piezoelectric drive electrode or a piezoelectric sensing electrode. Therefore, a piezoelectric layer is not required when making such an accelerometer. If the accelerometer and gyroscope are made on the same large area substrate, the accelerometer portion can be removed from the mask when the piezoelectric layer is filmed, patterned and etched.
In some implementations, the gyroscopes and accelerometers described herein may use different thicknesses of sacrificial material to make them. For example, the gap between the accelerometer electrodes and the proof mass can be larger than the gap between the proof mass and the metallization layer of the gyroscope in some implementations. In some implementations that use copper as the sacrificial material, this difference in sacrificial layer thickness can be caused by plating copper over the copper seed layer only in the area where the accelerometer is manufactured.
In some gyroscope implementations, the gyroscope can be encapsulated in vacuum, but the accelerometer does not need to be encapsulated in vacuum. In some implementations, the step of injecting gas into a encapsulated accelerometer can actually be beneficial as it results in attenuation. Therefore, in some implementations, two different encapsulation processes can be used when both the gyroscope and the accelerometer are made on a large area substrate. One encapsulation process can be performed almost in vacuum, but the other process is not. In other implementations, a single encapsulation process can be performed in near vacuum. Since the encapsulated accelerometer can be left partially open in this process, gas can then enter the packaging of the encapsulated accelerometer. Accelerometer packaging can also be completely closed (eg, with solder) in subsequent processes if necessary.
47A and 47B show an example of a system block diagram showing a display device 40 including a plurality of interference modulators. For example, the display device 40 can be a cellular phone or a mobile phone. However, the same components of display device 40 or slightly different variations thereof also indicate different types of display devices such as televisions, e-readers, and portable media players.
The display device 40 includes a housing 41, a display 30, an antenna 43, a speaker 45, an input device 48, and a microphone 46. The housing 41 can be formed by any of a variety of manufacturing processes, including injection molding and vacuum forming. In addition, the housing 41 can be made of any of a variety of materials, including, but not limited to, plastics, metals, glass, rubber, and ceramics, or combinations thereof. The housing 41 may include removable parts (not shown) that are interchangeable with other removable parts, including different colored or different logos, images, or symbols.
The display 30 may be any of a variety of displays, including bistable or analog displays, as described herein. The display 30 can also be configured to include a flat panel display such as a plasma, EL, OLED, STN LCD, or TFT LCD, or a non-flat panel display such as a CRT or other tube device. In addition, the display 30 may include an interferometric modulator display, as described herein.
The components of the display device 40 are shown schematically in FIG. 47B. The display device 40 includes a housing 41 and can include at least additional components partially encapsulated therein. For example, the display device 40 includes a network interface 27 including an antenna 43 coupled to a transmitter / receiver 47. The transmission / reception unit 47 is connected to the processor 21, and the processor is connected to the adjustment hardware 52. The tuning hardware 52 may be configured to tune the signal (eg, filter the signal). The adjustment hardware 52 is connected to the speaker 45 and the microphone 46. The processor 21 is also connected to the input device 48 and the driver controller 29. The driver controller 29 is coupled to the frame buffer 28 and the array driver 22 and further coupled to the display array 30. The power supply 50 can power all components as needed by the design of the particular display device 40.
The network interface 27 includes an antenna 43 and a transmission / reception unit 47, and the display device 40 can communicate with one or more devices via a network. The network interface 27 may have, for example, some processing power that relaxes the data processing requirements of the processor 21. The antenna 43 can transmit and receive signals. In some implementations, the antenna 43 comprises the IEEE 16.11 standard, including IEEE 16.11 (a), (b), or (g), or IEEE 802.11a, b, g, or n. RF signals are transmitted and received according to the IEEE 802.11 standard. In some other implementations, the antenna 43 transmits and receives RF signals according to the BLUETOOTH standard. In the case of a mobile phone, the antenna 43 is a code division multiple access (CDMA), frequency division multiple access (FDMA), time division multiple access (TDMA), Global System for Mobile communications (GSM), GSM / General Packet Radio Services (GPRS). ), Enhanced Data GSM Environment (EDGE), Terrestrial Trunked Radio (TETRA), Broadband CDMA (W-CDMA), Evolution Data Optimized (EV-DO), lexEV-DO, EV-DO Rev A, EV-DO B, High Speed Packet Access (HSPA), High Speed Downlink Packet Access (HSDPA), Fast Uplink Packet Access (HSUPA), Advanced High Speed Packet Access (HSPA +), Long Term Evolution (LTE), APPS, or 3G or 4G Technology It is designed to receive other known signals used to communicate within a wireless network, such as systems that use. The transmitter / receiver 47 can preprocess the signal received by the processor 21 and received from the antenna 43 so that it can be further manipulated. The transmission / reception unit 47 can process the signal received from the processor 21 so that it can be transmitted from the display device 40 via the antenna 43. The processor 21 may be configured to acquire time data via a network interface 27, for example, from a time server.
In some implementations, the transmitter / receiver 47 can be replaced by a receiver. In addition, the network interface 27 can be replaced with an image source capable of storing or generating image data transmitted to the processor 21. The processor 21 can control the overall operation of the display device 40. The processor 21 receives data such as compressed image data from the network interface 27 or an image source and processes the data into a format that can be easily processed into raw image data or raw image data. The processor 21 can send the processed data to the driver controller 29 or the frame buffer 28 and store it. Raw data is typically information that identifies image characteristics at any position in the image. For example, such image characteristics can include color, saturation, and grayscale levels.
The processor 21 includes a microcontroller, a CPU, or a logical unit and can control the operation of the display device 40. The tuning hardware 52 may include an amplifier and a filter for sending the signal to the speaker 45 and receiving the signal from the microphone 46. The tuning hardware 52 may be a discrete component within the display device 40, or may be incorporated within the processor 21 or other component.
In some implementations, the display device 40 may include one or more gyroscopes and / or accelerometers 75. Such a gyroscope and / accelerometer 75 may be, for example, substantially as described herein and may be manufactured according to the process described herein. The gyroscope and / or accelerometer 75 may be configured to communicate with the processor 21 to supply the gyroscope data or the accelerometer data to the processor 21. Therefore, the display device 40 may be capable of performing some of the methods described above relating to the use of gyroscope data and / or accelerometer data. Further, such data may be stored in the memory of the display device 40.
The driver controller 29 receives the raw image data generated by the processor 21 directly from the processor 21 or from the frame buffer 28, and appropriately reformifies the raw image data in order to speed up transmission to the array driver 22. can do. In some implementations, the driver controller 29 can reformat the raw image data into a data flow that has a format similar to the raster scheme so that it has a time sequence suitable for scanning on the display array 30. The driver controller 29 then sends the formatted information to the array driver 22. Although a driver controller 29, such as an LCD controller, is often associated with a system processor 21 as a stand-alone integrated circuit (IC), such a controller can be implemented in many ways. For example, the controller can be embedded in the processor 21 as hardware, embedded in the processor 21 as software, or fully integrated in the hardware with the array driver 22.
The array driver 22 receives formatted information from the driver controller 29 and applies video data to hundreds and sometimes thousands (or more) reads coming from the xy matrix of display pixels many times per second. Can be reformatted into a set of parallel waveforms.
In some implementations, the driver controller 29, array driver 22, and display array 30 are suitable for any of the types of displays described herein. For example, the driver controller 29 can be a conventional display controller or a bistable display controller (eg, IMOD controller). In addition, the array driver 22 can be a conventional driver or a bistable display driver (eg, an IMOD display driver). Further, the display array 30 can be a conventional display array or a bistable display array (eg, a display including an IMOD array). In some implementations, the driver controller 29 can be integrated with the array driver 22. Such implementations are common in highly integrated systems such as mobile phones, watches, and other small area displays.
In some implementations, the input device 48 can be configured, for example, to allow the user to control the operation of the display device 40. The input device 48 can include a keypad such as a QWERTY keyboard or telephone keypad, a button, a switch, a rocker, a touch screen, or a pressure-sensitive or heat-sensitive membrane. The microphone 46 can be configured as an input device for the display device 40. In some implementations, voice commands through the microphone 46 can be used to control the operation of the display device 40.
The power source 50 may include various energy storage devices as known in the art. For example, the power source 50 may be a rechargeable battery such as a nickel cadmium battery or a lithium ion battery. The power source 50 may be a renewable energy source, a capacitor, or a solar cell containing a plastic solar cell or a solar cell paint. The power source 50 can also be configured to receive power from a wall outlet.
In some implementations, the driver controller 29, which can be located at multiple locations within the electronic display system, is provided with a control program function. In some other implementations, the array driver 22 is provided with a control program function. The optimizations described above can be implemented on any number of hardware and / or software components and in various configurations.
The various exemplary logical functions, logical blocks, modules, circuits, and algorithmic processes described with respect to the implementations disclosed herein can be implemented as electronic hardware, computer software, or a combination thereof. .. Hardware and software interchangeability is generally described for functionality and is demonstrated in the various exemplary components, blocks, modules, circuits, and processes described above. Whether such functionality is implemented in hardware or software depends on the particular application and the design constraints imposed on the entire system.
The hardware and data processing equipment used to implement the various exemplary logic circuits, logic blocks, modules, and circuits described with respect to the aspects disclosed herein are general purpose single or multi-chips. Processors, Digital Signal Processors (DSPs), Application Specific Integrated Circuits (ASICs), Field Programmable Gate Arrays (FPGAs) or Other Programmable Logic Devices, Discrete Gate or Transistor Logic, Discrete Hardware Components, or Described herein. It can be implemented or performed by any combination of these designed to perform the function being performed. The general purpose processor may be a microprocessor or any conventional processor, controller, microcontroller, or state machine. Processors can also be implemented as a combination of computing devices, such as a combination of DSP and microprocessor, multiple microprocessors, one or more microprocessors working with a DSP core, or other such configurations. In some implementations, certain processes and methods can be performed by circuits dedicated to a given function.
In one or more embodiments, the functionality described is hardware, digital electronic circuits, computer software, firmware, or a combination thereof, including the structures disclosed herein and their structural equivalents. Can be implemented in. The invented implementation described herein is encoded on a computer storage medium for execution by one or more computer programs, i.e., a data processing device, or to control the operation of the data processing device. It can also be implemented as one or more modules consisting of computer program instructions.
The various exemplary logical functions, logical blocks, modules, circuits, and algorithmic processes described with respect to the implementations disclosed herein can be implemented as electronic hardware, computer software, or a combination thereof. .. Hardware and software interchangeability is generally described for functionality and is demonstrated in the various exemplary components, blocks, modules, circuits, and processes described above. Whether such functionality is implemented in hardware or software depends on the particular application and the design constraints imposed on the entire system.
The hardware and data processing equipment used to implement the various exemplary logic circuits, logic blocks, modules, and circuits described with respect to the aspects disclosed herein are general purpose single or multi-chips. Processors, Digital Signal Processors (DSPs), Application Specific Integrated Circuits (ASICs), Field Programmable Gate Arrays (FPGAs) or Other Programmable Logic Devices, Discrete Gate or Transistor Logic, Discrete Hardware Components, or Described herein. It can be implemented or performed by any combination of these designed to perform the function being performed. The general purpose processor may be a microprocessor or any conventional processor, controller, microcontroller, or state machine. Processors can also be implemented as a combination of computing devices, such as a combination of DSP and microprocessor, multiple microprocessors, one or more microprocessors working with a DSP core, or other such configurations. In some implementations, certain processes and methods can be performed by circuits dedicated to a given function.
In one or more embodiments, the functionality described is hardware, digital electronic circuits, computer software, firmware, or a combination thereof, including the structures disclosed herein and their structural equivalents. Can be implemented in. The invented implementation described herein is encoded on a computer storage medium for execution by one or more computer programs, i.e., a data processing device, or to control the operation of the data processing device. It can also be implemented as one or more modules consisting of computer program instructions.
When implemented in software, these features may be stored or transmitted as one or more instructions or codes on a computer-readable medium. The process of methods or algorithms disclosed herein can be implemented in a processor executable software module that can be placed on a computer-readable medium. Computer-readable media include both computer storage media and communication media, including media that can be used to transfer computer programs from one location to the other. The storage medium may be any available medium that can be accessed by a computer. For example, but not limited to, such computer-readable media include RAM, ROM, EEPROM, CD-ROM, or other optical disk storage, magnetic disk storage, or other magnetic storage device, or instruction or data structure. Can be used to store the desired program code in the form of, and may include other media accessible by a computer. Also, any connection may be referred to as a computer-readable medium. As used herein, "Disc" and "Disc" (both discs in Japanese) are compact discs (CDs), laser discs, optical discs, digital versatile discs (DVDs), floppy discs, etc. And including optical discs, "Disc" usually reproduces data magnetically, and "Disc" uses a laser to reproduce data optically. The above combinations must also be within the range of computer-readable media. In addition, the operation of the method or algorithm can reside on machine-readable and computer-readable media as one or a combination or set of codes and instructions that can be incorporated into computer program products.
Various modifications to the implementations described in this disclosure will be readily apparent to those skilled in the art, and the general principles defined herein deviate from the spirit or scope of this disclosure. It can also be applied to other implementations. As such, this disclosure is not intended to be limited to the implementations presented herein, and is most consistent with the claims, principles, and novel features disclosed herein. A wide range should be applied. The word "exemplary" is used herein exclusively to mean "used as an example, case, or example." Implementations described herein as "exemplary" are not necessarily construed as preferred or advantageous over other implementations. In addition, for those skilled in the art, the terms "top (side)" and "bottom (side)" are sometimes used to facilitate the illustration of the figure and are properly oriented pages. It will be immediately appreciated that the relative positions corresponding to the orientations in the figure above are shown and do not necessarily reflect the proper orientation of the IMOD (or other device) as implemented.
Some of the features described herein in the context of different implementations can also be implemented in combination in a single implementation. Conversely, the various features described in the context of a single implementation can also be implemented separately in multiple implementations or in a suitable partial combination. Further, some features can be described above as operating in a particular combination, and even one or more obtained from the claimed combination, which may be initially claimed as such. The features may, in some cases, be cut out from the combination, and the claimed combination may be intended for a partial combination or a modified form of the partial combination.
Similarly, operations are shown in the drawing in a particular order, which means that such operations are performed in the specific order shown, or in order, or the operations illustrated. It should not be understood that it requires that it be carried out to achieve the desired result. In addition, the drawings can outline another exemplary process in the form of a flow diagram. However, other operations not shown can be incorporated into the exemplary process shown as a schematic. For example, one or more additional operations can be performed before, after, at the same time, or in between any of the illustrated operations. In some situations, multitasking and parallelism may be advantageous. In addition, although the various system components are separated in the implementations described above, it should not be understood that such separation is required in all implementations, and the program components and systems described are: In general, it will be understood that it can be integrated into a single software product or packaged into multiple software products. In addition, other implementations fall within the following claims. In some cases, the operations described in the claims can be performed in a different order, yet the desired result is obtained.
1 common line 2 common line 3 common line 12 Interference modulator 13 arrow 14 Movable reflective layer 14a Reflective sublayer 14b support layer 14c conductive layer 15 light 16 Optical stack 16a Absorbent layer, light absorber 16b dielectric 18 struts, supports 19 gap, cavity 20 Transparent substrate 21 processor 22 Array driver 23 Black mask structure 25 sacrificial layer 24-line driver circuit 26-row driver circuit 27 network interface 28 frame buffer 29 driver controller 30 display array, panel 34 Deformable layer 35 spacer layer 40 Display device 41 housing 43 antenna 45 speakers 46 microphone 47 Transmitter / receiver 48 Input device 50 power supply 52 Adjustment hardware 60a 1st line time 60b second line time 60c 3rd line time 60d 4th line time 60e 5th line time 62 High segment voltage 64 Low segment voltage 70 release voltage 72 High hold voltage 74 High addressing voltage 75 Gyroscope and / or accelerometer 76 Low hold voltage 78 Low addressing voltage 80 manufacturing process 82 blocks 84 blocks 86 blocks 88 blocks 90 blocks 900 gyroscope 910a, 910b Branch 1000 gyroscope 1000a gyroscope 1005 Central anchor 1010a to d Bent part 1012a, 1012b slot 1015a to d drive electrodes 1017a center line 1020 Proof Mass 1025a-1025d Sensing electrode 1105a, 1105b side 1110a, 1110b Arrow 1200 gyroscope 1205 central anchor 1207 slot 1210 drive frame 1215 drive beam 1215a-d drive beam 1218 central axis 1220 Proof Mass 1220a, 1220b Side of proof mass 1225a ~ d Sensing beam 1226 Distal end 1229, 1217 slots 1231 center line 1305a Piezoelectric sensing electrode 1305b Piezoelectric sensing electrode 1305e, 1305f Piezoelectric drive electrode 1500 gyroscope 1505a, 1505b A pair of anchors 1510 sensing frame 1510a Central part 1512 Tapered part 1513 1st end 1514 second end 1515 drive beam 1515a-d drive beam 1517 slot 1520a-d Sensing beam 1522 slot 1524 slot 1525 linkage beam 1530 Proof Mass 1605 end 1610 end 1700 gyroscope 1705a, 1705b Anchor 1710 sensing frame 1714 distal end 1715 drive beam 1717 slot 1720a-d Sensing beam 1722 Wide end 1723 narrow end 1724 slot 1726 slot 1730 proof mass 1905 area 1910 area 2000 z-axis gyroscope 2005 central anchor 2010 sensing frame 2015a-d drive beam 2020 Sensing beam 2020a-d Sensing beam 2030 drive frame 2030a, 2030b Drive frame part 2035a-e gap 2035c slot 2040a, 2040b Bent part 2045a, 2045b Bent part 2047a, 2047b Bent part 2050a, 2050b electrodes 2305 Proof Mass 2310 Electrode array 2400 accelerometer 2400a-c accelerometer 2401 Base material 2405 electrode 2405a ~ g Electrode 2410 Conductive proof mass 2410a-c Conductive proof mass 2420 slots 2420a, 2420b slots 2425 rim 2500 accelerometer 2500a z-axis accelerometer 2510 Conductive proof mass 2510a Conductive proof mass 2510b side 2515 support 2515a anchor 2515b pivot 2520 perforation 2525 Torsion bend 2525a Pair of twisted bends 2530 pivot 2530a pivot 2600a, 2600c accelerometer 2605 Anchor 2610a, 2610b Inner frame 2612a Almost stationary part 2612b Resting part 2614a Moving parts 2615a ~ d Bent part 2620a Bent part 2625 Pair of stress separation slits 2670 extension 2710 distance 2800 3-axis accelerometer 2805 length 2810 width 2910 Separation frame 2915 anchoring frame 3000 graph 3100 comb-tooth accelerometer 3102a, 3102b members 3105a, 3105b Comb tooth type electrode 3110 graph 3115 curve 3120 curve 3125 curve 3130 curve 3155 inset 3160 inset 3165 insertion view 3170 inset 3205, 3210, 3215, 3220 curves 3225 curve 3250 inset 3260 inset 3300 method 3300 process 3301 block 3305 blocks 3310 blocks 3315 blocks 3320 blocks 3325 blocks 3330 block 3400 method 3401 block 3405 block 3410 block 3415 block 3420 blocks 3425 block 3430 block 3505 Large area base material 3510 Metallization layer 3510a Metallization area 3510b Electrode region 3515 Dielectric layer 3605a, 3605b, 3605c, 3605d openings 3610 Metallization layer 3615a, 3615b lead area 3620a, 3620b Seal ring area 3625a, 3625b Accelerometer base area 3705 Victims 3805 High Aspect Ratio Lithographic Material 3810 gap 3815 Thick metal layer 3840 Movable area 3850 accelerometer 3860 gap 3905 cover 3905a Cover part 3905b Cover area 3910 accelerometer 4005 Integrated circuit 4010 Solder layer 4015 base material 4020 solder layer 4025 wire bond 4030 Protective material 4035 electrical connector 4040 package 4100 method 4105a block 4110 block 4115 block 4120 blocks 4125 blocks 4130 blocks 4200 Large area base material 4205 Metallization layer 4215 Dielectric layer 4220a, 4220b, 4220c openings 4225 Victims 4305 Dielectric layer 4310 Metallization layer 4315 Anchor area 4320 Piezoelectric film 4325 Metallization layer 4330 electrode 4405 Dielectric layer 4405 Plated seed layer 4410 High Aspect Ratio Lithographic Material 4415 Proof mass area 4420 frame area 4425 Seal ring area 4430 electrical pad area 4505 thick metal layer 4510 gold layer 4605 Proof Mass 4610 frame 4615 cover 4620 Seal ring 4625 Gyroscope 4630 electric pad 4635 Anchor
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| EP2564217B1 | European Patent Office (EPO) | B1 | |
| US9410805B2 | United States of America | B2 | |
| US9459099B2 | United States of America | B2 | |
| US9605965B2 | United States of America | B2 | |
| KR101810266B1 | Republic of Korea | B1 | |
| KR101845221B1 | Republic of Korea | B1 | |
| KR101851812B1 | Republic of Korea | B1 | |
| KR101854604B1 | Republic of Korea | B1 | |
| US10209072B2 | United States of America | B2 |
14 legal events, as the office reported them to INPADOC
Over the term
Point at a mark for the eventEvents
| Event | Code | |
|---|---|---|
| Cancellation because of no payment of annual feesLAPS | LAPS | |
| Receipt of annual feesJAPANESE INTERMEDIATE CODE: R250R250 | R250 | |
| Receipt of annual feesJAPANESE INTERMEDIATE CODE: R250R250 | R250 | |
| Receipt of annual feesJAPANESE INTERMEDIATE CODE: R250R250 | R250 | |
| Receipt of annual feesJAPANESE INTERMEDIATE CODE: R250R250 | R250 | |
| Written notification of registration of transferJAPANESE INTERMEDIATE CODE: R350R350 | R350 | |
| Request for change of ownership or part of ownershipJAPANESE INTERMEDIATE CODE: R313113S111 | S111 | |
| Certificate of patent or registration of utility modelJAPANESE INTERMEDIATE CODE: R150R150 | R150 | |
| First payment of annual fees (during grant procedure)JAPANESE INTERMEDIATE CODE: A61A61 | A61 | |
| Written decision to grant a patent or to grant a registration (utility model)JAPANESE INTERMEDIATE CODE: A01A01 | A01 | |
| Decision of grant or rejection writtenTRDD | TRDD | |
| Request for written amendment filedJAPANESE INTERMEDIATE CODE: A523A521 | A521 | |
| Notification of reasons for refusalJAPANESE INTERMEDIATE CODE: A131A131 | A131 | |
| Report on retrievalJAPANESE INTERMEDIATE CODE: A971007A977 | A977 |
Numbers
- Publication
- 5658355
- Application
- 2013508015
Titles2
- Japanese
- 積層横方向オーバーラップトランスデューサ(SLOT)ベースの3軸加速度計
- English
- Stacked lateral overlap transducer (SLOT) based 3-axis accelerometer
Classification
- CPC, 23
- G01C19/5712
- G01C19/56
- G01C19/5769
- G01C19/5747
- G01P15/0802
- G01P15/125
- G01P15/18
- G01P2015/082
- Y10T29/49155
- Y10T29/42
- Y10T29/49002
- Y10T29/49005
- H10W72/884
- H10W72/073
- H10W72/075
- H10W74/00
- G01C19/5719
- B81B3/00
- B81C1/00
- H10N30/03
- H10N30/071
- H10N30/072
- G01C25/00
- IPC, 12
- G01P15 125
- G01P15 18
- H10D48 50
- H10N30 00
- H10N30 01
- H10N30 03
- H10N30 071
- H10N30 072
- H10N30 30
- H10N30 85
- H10N30 853
- H10N30 87
