Three-dimensional filter and tunable filter apparatus

The present invention relates to a three-dimensional filter and a tunable filter device using the three-dimensional filter, and particularly to a configuration of a three-dimensional filter and a tunable filter device suitable for transmission of high-frequency signals.

To apply a bandpass filter configured for conventional power levels to a high frequency (RF) transmission system in the microwave band of a cognitive radio base station, it can withstand high power, have a high Q value, and pass through. It is desirable that the center frequency of the region be variable over a wide range. It is not easy to improve all these conditions at the same time.

Among RF filters for base stations of several GHz or less, types such as coaxial resonator type, dielectric resonator type, and superconducting resonator type are used for reception that handles small signal power of several watts (W) or less. Has been done. High frequency selectivity is desired for these receiving filters rather than miniaturization. In terms of high frequency selectivity, a receiving filter including a resonance circuit using an oxide high-temperature superconductor film is advantageous because a high no-load Q value can be obtained.

On the other hand, in the case of a superconducting type filter for transmission that handles a large amount of power, it is not easy to achieve both miniaturization and power characteristics (withstand power, etc.), which is a big problem.

Among the superconducting filters, in the planar circuit type structure, a resonator pattern is formed of a superconducting material on a dielectric substrate. As an attempt to reduce the size and improve the power consumption of such a flat circuit type superconducting filter, (a) The pattern of the superconducting membrane of the resonator circuit is made into a patch shape such as circular or polygonal, and the current density concentration is relaxed in TM mode or the like, or (b) A method has been proposed in which grain boundaries, impurities, etc. are controlled, and a higher quality oxide high-temperature superconductor film is developed and used.

It is also known that by arranging a dielectric block other than the dielectric substrate on which the resonator pattern is formed on the planar circuit type resonator, the concentration of the current density on the superconductor can be relaxed to some extent.

On the other hand, in the three-dimensional structure of the superconducting filter, as its basic structure, studies centering on a resonator and application to an accelerating cavity have been conducted. In resonators using oxide high-temperature superconductors, reports of high unloaded Q of hundreds of thousands to millions or more have been seen in structures in which superconducting films are arranged above and below the dielectric block (for example, non-patent documents). See 1 and 2).

There are also reports of studies on tunability of resonator filters using oxide superconductors. For example, there is known a configuration in which a dielectric plate is arranged above a planar resonator pattern formed of an oxide superconductor film and the vertical position of the upper dielectric plate is adjusted (see, for example, Patent Document 1). ). In this configuration, the vertical position of the dielectric plate is adjusted by applying a voltage to the piezoelectric element to displace it.<patcit num="1"><text>Japanese Unexamined Patent Publication No. 2002-204102</text></patcit><nplcit num="1"><text>T.Hashimoto and Y.Kobayashi, "Frequency dependence measurements of surface resistance of superconductors using four modes in a sapphire rodresonator," IEICE Trans. Electron., VOL. E86-C, No. 8, pp.1721 -1728, Aug. 2003.</text></nplcit><nplcit num="2"><text>T. Hashimoto and Y. Kobayashi, "Two-Sapphire-Rod-Resonator Method to Measure theSurface Resistance of High-Tc Superconductor Films," IEICE Trans. Electron., Vol. E87-C, No. 5, pp.681-688, May. 2004</text></nplcit>

<p> However, the configuration of the superconducting tunable filter of the known example tends to cause deterioration of the Q characteristic. In addition, it remains an issue to operate with a large power of several tens of watts or more in the multi-stage operation required to realize a highly practical and steep frequency cutoff characteristic.</p><p> Therefore, an object of the present invention is to realize a tunable filter structure capable of improving the above-mentioned problems in a high-frequency filter.</p>

<p> In order to solve the above problems, the first aspect of the present invention provides a three-dimensional filter. The three-dimensional filter is A pair of superconducting membranes facing each other, A three-dimensional resonator composed of a dielectric and located between the pair of superconducting membranes, One of the pair of superconducting membranes is movably configured with respect to the three-dimensional resonator.</p><p> The second aspect provides a tunable filter device that employs a three-dimensional filter. Tunerable filter device Conductor container and A three-dimensional filter that is arranged in the conductor container and includes a pair of superconducting membranes facing each other and a steric resonator located between the pair of superconducting membranes, and one of the pair of superconducting membranes is A three-dimensional filter that is movably held in the conductor container, The first and second waveguides connected to the conductor container in a direction orthogonal to the movable direction of the one superconducting film. including.</p><p> On the third aspect, a tunable filter device having a multi-stage three-dimensional filter is provided. This multi-stage tunable filter device The first and second conductor containers placed adjacent to each other, With the openings formed on the adjacent surfaces of the first and second conductor containers, The first and second three-dimensional filters arranged in the first and second conductor containers, respectively, A shutter that is inserted between the first conductor container and the second conductor container to make the area of the opening variable. To be equipped.</p>

<p> With the above-described configuration, a three-dimensional filter suitable for microwave power and capable of tunable frequency characteristics and a tunable filter device are realized.</p>

Prior to explaining a good embodiment of the present invention with reference to the accompanying drawings, the basic configuration of the present invention will be described. In the embodiment, a dielectric block is used as the steric resonator to form a steric filter. Superconducting films are placed on both sides of the dielectric block (or stereo resonator) in the direction perpendicular to the signal propagation direction, for example, above and below, respectively, and the relative position of one superconducting film with respect to the dielectric block is changed. , Make the resonance frequency variable.

FIG. 1 is a schematic configuration diagram of the tunable filter device 1 according to the first embodiment of the present invention. The tunable filter device 1 includes a dielectric block 11 as a three-dimensional resonator, a superconducting film 12 arranged below the dielectric block 11, and a superconducting film movably arranged above the dielectric block 11. Including 13b. In the example of FIG. 1, the position of the superconducting film 13b with respect to the dielectric block 11 is made variable by using the drive mechanism 29.

The movable superconducting film 13b is formed on a surface (opposing surface) of the dielectric substrate 13a on the side facing the dielectric block 11. The dielectric substrate 13a and the superconducting film 13b form a dielectric substrate 13 with a superconducting film. The superconducting film 12 located below the dielectric block 11 is formed and fixed on the back surface of the dielectric substrate 10. The three-dimensional filter 5 is composed of a pair of superconducting films 12 and 13b and a dielectric block 11. The three-dimensional filter 5 is arranged in a conductor container 22 made of copper, aluminum, an alloy thereof, or the like. It is desirable that the inner side wall of the conductor container 22 is also covered with a substrate with a superconducting film. In the example of FIG. 1, the propagation direction of the signal (electromagnetic wave) is the horizontal direction of the paper as shown by the arrow, and the direction from the left side to the right side.

The dielectric substrate 13 with a superconducting film is connected to the drive mechanism 29. The drive mechanism 29 includes, for example, a movable shaft 24 that penetrates the conductor container 22 and is connected to the dielectric substrate 13 with a superconducting film, a spring 25, an actuator 27, an actuator movable portion (displacement portion) 26, and a ball joint. Including 23. The actuator 27 constitutes an oilless piezoelectric actuator (rotary type, linear type) using a material such as PZT. The ball joint 23 compensates for the movement due to the mutual axial deviation between the actuator 27 and the movable shaft 24. When the method of directly connecting the actuator 27 and the movable shaft 24 is used, the ball joint 23 and the spring 25 can be omitted.

The three-dimensional filter 5 of FIG. 1 can be applied to a transmission filter, and waveguides 30A and 30B are used for input / output of signals to the three-dimensional filter 5. The signal (electromagnetic wave) propagating through the waveguide 30A enters the dielectric block 11 through the opening 31A of the conductor container 22, and the component corresponding to the natural resonance frequency of the dielectric block 11 is extracted. The signal that has passed through the dielectric block 11 is output from the opening 31B on the opposite side to the waveguide 30B.

The waveguides 30A and 30B are, for example, rectangular waveguides, and the signal travels in TE mode. The electromagnetic field that has entered the conductor container 33 through the opening 31A enters the TM mode in the dielectric block 11, and the resonant electric field is concentrated in the dielectric block 11. As a result, local electric field concentration on the superconducting film 13b can be suppressed, which is advantageous in terms of power resistance as compared with a planar circuit type superconducting resonator.

In order to resonate the signal propagating through the waveguide 30A and pass it through the conductor container 22, the opening 31A of the conductor container 22 is narrower than the cross section of the waveguide 30A (the cross section perpendicular to the propagation direction). ing. That is, through the opening 31A, only microwaves having a specific frequency satisfying the resonance condition are incident on the metal container 22. The same applies to the output side opening 31B and the waveguide 30B.

The entire tunable filter device 1 is arranged in a cooling container. At a temperature sufficiently lower than the critical temperature Tc of superconductivity, it operates as an electromagnetic field resonator with a high no-load Q value.

FIG. 2 shows a configuration example of the three-dimensional filter 5. In the example of FIG. 2 (a), the superconducting film 12 on the fixed side is an MgO (100) crystal, LaAlO.₃(100) YBCO (YBa) on the back surface of the dielectric substrate 10 such as a crystal₂Cu₃O_X, X = 6.90 ~ 6.99), etc. are formed using superconducting materials. The dielectric substrate 10 functions as a base of the three-dimensional filter 5. The dielectric block 11 is a columnar block protruding from the dielectric substrate 10, and alumina, sapphire, titania, or the like is used. The term "block" used in the dielectric block 11 means a "three-dimensional mass". As described above, the dielectric substrate 13a on which the superconducting film 13b is formed is arranged on the dielectric block 11 and is connected to the drive mechanism 29.

Figure 2 (b) shows an assembly example of the three-dimensional filter 5. MgO, LaAlO₃A recess 15 is formed on the surface of the single crystal dielectric substrate 10 opposite to the superconducting film 12 by ultrasonic milling or the like. The diameter of the recess 15 is about the same as the diameter of the cylindrical dielectric block 11. By fitting the dielectric block 11 into the recess 15, the main body shape of the three-dimensional filter 5 having a base and a protrusion is completed.

Alternatively, Figure 2<u style="single">(c)</u>As shown in the above, the alumina-sintered dielectric block 41 may be attached to the MgO (100) substrate 42. The back surface of the MgO substrate 42 is covered with a superconducting film 39. The dielectric block 41 has a flange 41b, and the MgO substrate 42 and the flange 41b form a base of a three-dimensional filter. A LaAlO3 (100) substrate may be used instead of the MgO (100) substrate 42. Further, AL2O3 may be processed from the laminated structure of YBCO / CeO2 / Al2O3 to prepare a three-dimensional filter configuration with a superconducting film. In this case, the film thickness of the CeO2 film is about 50 nm.

FIG. 3 is a schematic diagram of a simulation sample (model) for measuring the frequency characteristics of the tunable filter device 1 having the configuration of FIG. As shown in FIGS. 3 (a) to 3 (c), a cylindrical dielectric block 11 having a diameter of 8 mm and a height of 8 mm is arranged in the conductor container 22, and a superconducting particle having a diameter of 8 mm is placed on the dielectric block. The conductive film 13b is movably arranged. A superconducting film 12 is formed on the bottom surface of the dielectric block 11. The size of the conductor container 22 is 20 × 11 mm × 10 mm (h = 10). Waveguides 30A and 30B are located on both sides of the conductor container 22. Each waveguide 30 is 40 × 19.5 mm × 20 mm (h = 20).

It is assumed that the dielectric block 11 is a high-purity Al2O3 having a dielectric constant of 9.8, the superconducting film 13b is a high-quality c-axis oriented YBCO epitaxial film, and there is no loss. The openings 31A and 31B of the conductor container 22 are narrowed by 1 mm from both sides by a slit 25 having a size of 1 × 1 × 10 mm. In an actual device, the widths of the openings 31A and 31B may be made variable by using a slide plate (not shown) inserted in the propagation path instead of the slit 25.

Under such conditions, the height position of the superconducting film 13b is changed to make the distance Lup (uptune) between the dielectric block 11 and the superconducting film 13b variable. When the superconducting film 13b is on the ceiling of the conductor container 22, Lup = 2 mm. From this position, the superconducting film 13b is gradually brought closer to the dielectric block 11 and its frequency characteristics are measured.

4A and 4B are graphs showing the measurement results, showing S21 (transmission) characteristics and S11 (reflection) characteristics, respectively. In the figure, the characteristic profile) drops significantly around 3.75 GHz because the sample superconducting tunable filter device is designed for high frequencies in the 5 GHz band, and the waveguide 30 with a cross section of 40 x 19.5 mm. This is because it does not propagate electromagnetic waves with a frequency of 3.75 GHz or less.

In the graph, the distance Lup between the superconducting film 13b and the dielectric block 11 is changed from 2 mm to 1.5 mm, 1.0 mm, 0.5 mm, 0.4 mm, and 0.3 mm, and the superconducting film 13b is changed to the dielectric block 11. As you get closer to, the center frequency f₀It can be seen that can be shifted to the lower side and the center frequency of the bandpass can be made tunable over a wide range. In particular, around 4.2 to 4.5 GHz, the center frequency can be fine-tuned while maintaining the characteristics.

Under the sample conditions shown in FIGS. 3, 4A and 4B, the no-load Q value (Qu) can achieve a high value of tens of thousands or more in the design in which the resonance frequency is in the 5 GHz band. Furthermore, if the quality of the material is improved and the structural dimensions and conditions are optimized, a Qu of 1 million or more can be obtained.

Next, the tunable filter device 50 of the second embodiment, in which the three-dimensional resonance filter of the first embodiment is configured in multiple stages, will be described with reference to FIG. In the example of FIG. 5, a two-stage bandpass filter is used. The tunable filter device 50 has conductor containers 52A and 52B, and three-dimensional filters 55A and 55B are arranged in the conductor containers 52A and 52B, respectively.

Each three-dimensional filter 55A (or 55B) has a dielectric block 61A (or 61B) and a superconducting film 62A (or 60B) formed on the back surface of the dielectric plate 60A (or 60B) on the bottom surface side, as in the first embodiment. 62B) and a superconducting film 53b (or 53b') formed on a dielectric substrate 53a (or 53a') that is held up and down so as to be movable up and down. The dielectric substrate 53a and the superconducting film 53b are combined to form a dielectric substrate 53A (or 53B) with a superconducting film. The material and structure of the dielectric block 61 and the material of the superconducting film are the same as those in the first embodiment, and thus the description thereof will be omitted.

Orifices (openings) 114A and 114B are provided on the adjacent surfaces of the two conductor containers 52A and 52B, respectively. A slit 115 is provided between the conductor containers 52A and 52B, and a shutter 113 is inserted into the slit 115 to adjust the areas of the orifices 114A and 114B. In this example, the shutter 113 is a dielectric substrate whose both sides are covered with a superconducting film.

As the drive mechanism of the shutter 113, for example, an oilless piezoelectric actuator 102 such as PZT, a movable shaft 126, a guide 114 for guiding the vertical movement of the movable shaft 126, and a spring 125 can be used. By moving the shutter 113 up and down, the amount of electromagnetic field coupling between the left and right three-dimensional filters (specifically, the dielectric blocks 61A and 61B as resonators) can be adjusted. The adjustment mechanism is not limited to the use of the shutter 113 or the drive mechanism, and any adjustment mechanism capable of changing the electromagnetic field coupling at the orifices 114A and 114B can be used. Further, in the example of FIG. 5, the shutter 113 is configured to move in the vertical direction to adjust the coupling at the orifices 114A and 114B, but the shutter can be moved in the horizontal direction to adjust the area of the orifices 114A and 114B. May be configured to change.

Similar to the first embodiment, the dielectric substrates 53A and 53B with a superconducting film held in the conductor containers 52A and 52B are connected to the corresponding drive mechanisms 69A and 69B, and are perpendicular to the dielectric blocks 61A and 61B, respectively. The position is variably controlled. As a result, the resonance frequencies of the three-dimensional filters can be adjusted and aligned. The configurations of the drive mechanisms 69A and 69B are the same as those in the first embodiment, and details are omitted, but the main elements are the movable shafts 64A and 64B, the springs 65A and 65B, the ball joints 63A and 63B, and the piezoelectric actuators 67A and 67B, respectively. And its movable parts (displacement parts) 66A and 66B.

Openings 51A and 52B are provided on the opposite sides of the conductor containers 52A and 52B from the orifice 114 side, and are connected to the waveguides 30A and 30B, respectively. As in the first embodiment, the inner side walls of the conductor containers 52A and 52B are covered with the dielectric substrate 112 with a superconducting film.

The signal flow in the multi-stage filter of Example 2 is as follows. The signal introduced by the waveguide 30A is incident on the dielectric block 61A as the first three-dimensional resonator. The signal corresponding to the intrinsic resonance frequency of the dielectric block 61A passes through the dielectric block 61A. A part of the passing signal passes through the orifices 114A and 114B whose area is adjusted by the shutter 113, and the rest is reflected. The signal that has passed through the orifices 114A and 114B is incident on the dielectric block 61B as the second stereoresonator. The signal corresponding to the intrinsic resonance frequency of the dielectric block 61B is taken out from the opening 51B to the waveguide 30B.

As described above, the resonance frequencies of the first and second three-dimensional resonators (dielectric blocks) 61A and 61B are adjusted to match each other by adjusting the positions of the superconducting films 53b and 53b'. There is. Further, by adjusting the position of the shutter 113 and adjusting the areas of the orifices 114A and 114B, the coupling of the resonant electromagnetic field between the dielectric blocks 61A and 61B is changed, and the bandwidth is made variable. That is, in the second embodiment, both the center frequency and the bandwidth can be operated as a tunable two-stage bandpass filter.

The entire such two-stage bandpass filter is placed in a vacuum cooling chamber (not shown). At temperatures well below the critical superconducting temperature Tc, each of the dielectric blocks 61A and 61B operates as an electromagnetic field resonator with a high no-load Q value. Further, when the dielectric blocks 61A and 61B are formed into a cylindrical shape, the electric field of the propagating electromagnetic wave can be concentrated, and the local electric field concentration on the superconducting film can be prevented.

FIG. 6 is a schematic diagram showing the tuning effect of the tunable filter device 50 of the second embodiment. Without adjusting the coupling of orifices 114A and 114B, lower the substrates with superconducting membranes 53A and 53B by the same amount from the upper limit position above the first and second stereoresonators (dielectric blocks) 61A and 61B. Then, the peak is divided into a double-peaked curve like a broken line. However, in this case, if the coupling openings of the orifices 114A and 114B are adjusted to widen (by raising the shutter 113 in Example 2) and the coupling between the dielectric blocks 61A and 61B is strengthened, the broken line is shown. From the twin peak curve, a curve close to a single peak can be obtained like a solid line.

7A, 7B, and 7C are diagrams showing simulation samples (models) of the three-dimensional two-stage filter of the second embodiment. 40 × 19.5 × 20 (mm) waveguides 70A and 70B are connected to the input side of the conductor container 52A and the output side of the conductor container 52B, respectively. The opening 71A of the waveguide 70A serves as an input port, and the opening 71B of the waveguide 70B serves as an output port.

Cylindrical dielectric blocks 61A and 61B having a diameter of 8 mm and a height of 8 mm are arranged in the conductor containers 52A and 52B, respectively. The heights of the conductor containers 52A and 52B are 15 mm, and the dielectric substrates 53A and 53B with a superconducting film are arranged above the dielectric blocks 61A and 61B, respectively. Superconducting films 62A and 62B are formed on the bottom surfaces of the dielectric blocks 61A and 61B.

Dup the thickness of the dielectric substrates 53A, 53B with a superconducting film, that is, the distance from the upper surface of the dielectric substrates 53a, 53a'to the lower surface of the superconducting films 53b, 53b' (the surface facing the dielectric blocks 61A, 61B). Then, the distance between the superconducting films 53b and 53b'and the dielectric blocks 61A and 61B is adjusted by changing the Dup.

Further, a coupling adjusting plate (shutter 113, see FIG. 5) is inserted horizontally between the two conductor containers 52A and 52B from both sides to adjust the width (or area) of the orifice 114. The amount of protrusion on one side of the coupling adjusting plate at this time is defined as the coupling adjusting plate length Ls.

Fig. 8A to Fig. 8C are the simulation models of Fig. 7, in which the length Ls of the coupling adjustment plate is fixed to 6 mm, and the thickness Dup of the dielectric substrates 53A and 53B with a superconducting film is changed to 4 mm, 5 mm, and 6 mm. That is, it is a graph showing the change in characteristics when the superconducting films 53b and 53b'are brought closer to the dielectric blocks 61A and 61B. By bringing the superconducting films 53b and 53b'close to each other, the characteristics as a filter are exhibited, the center frequency is shifted to the lower side, and the reflection in the desired band (5 GHz band in this example) can be reduced.

On the other hand, FIGS. 9A to 9C show the simulation model of FIG. 7, in which the thickness Dup of the dielectric substrates 53A and 53B with superconducting films is fixed to 6 mm, and the coupling adjustment plate length Ls is 6.5 mm and 9.7 mm. It is a graph which shows the change of the characteristic when it changed to 7.0mm, that is, when the width of the orifice 114 was narrowed. If the length Ls of the coupling adjusting plate is increased from 6.5 mm to 6.7 mm and the width of the orifice 114 is narrowed, the signal bandwidth becomes small, but if it is narrowed too much, the characteristics as a filter cannot be obtained as shown in FIG. 9C.

The low frequency part of the S21 characteristic in the graph of Fig. 9B is depressed because the simulation sample is designed for high frequencies in the 5 GHz band, and it is a characteristic of the waveguides 70A and 70B with a cross section of 40 x 19.5 mm. This is because electromagnetic waves with frequencies below 3.75 GHz are not propagated.

In this way, even when the three-dimensional filter is configured in two stages, the tuner is adjusted by adjusting at least one of the positions of the superconducting films 53b and 53b'with respect to the dielectric blocks 61A and 61B and the width of the orifice between the three-dimensional filters. At least one of the center frequency and the bandwidth can be adjusted during the actual use of the bull filter device 50. Although the embodiments have been described above based on specific configuration examples, the present invention is not limited to these examples. For example, the dielectric blocks 11, 61A, and 61B are not limited to a cylindrical shape and may be a rectangular parallelepiped. The superconducting film is not limited to YBCO, but metal-based superconductors such as Nb, Nb-Ti, NbSn3, Pb, and Pb alloys, and oxidation of RBCO (R: Nd, Sm, Ho, Gd), BSCCO, etc. High-temperature superconductors can be used. Further, as the dielectric block used as the resonator, a crystal containing one or more kinds of oxides of Mg, Al, Ti, and Sr, or a ceramic material can be used.

In the configuration of the above-described embodiment, the following effects can be obtained. -Since a three-dimensional filter composed of a superconducting film having a small conductor loss and a dielectric block resonator having a small dielectric loss is used, a high no-load Q (Qu) can be obtained. -Since the structure is such that the resonant electric field is concentrated on the dielectric block, it is possible to suppress the concentration of the electromagnetic field on the superconducting film, which is advantageous in terms of power resistance as compared with the planar circuit type superconducting resonator. -A tunable bandpass characteristic that can adjust the center frequency and band of the passing region can be obtained.

Such a three-dimensional filter and a tunable filter device are suitable for shared use of radio waves, which is being realized in wireless communication systems, that is, efficient use of wireless resources that positively utilize vacant frequencies.

The following additional notes are presented for the above explanation. (Appendix 1) A pair of superconducting membranes facing each other, A three-dimensional resonator composed of a dielectric and located between the pair of superconducting membranes, Including One of the pair of superconducting membranes is a three-dimensional filter characterized in that it is movable with respect to the three-dimensional resonator. (Supplementary note 2) The steric filter according to Supplementary note 1, wherein the pair of superconducting membranes are arranged on both sides of a signal propagation path for the steric resonator. (Appendix 3) A first dielectric substrate located above the steric resonator and A second dielectric substrate located below the three-dimensional resonator, Including The one superconducting film is formed on the surface of the first dielectric substrate facing the three-dimensional resonator. The steric filter according to Appendix 1 or 2, wherein the other superconducting film is formed on a surface of the second dielectric substrate opposite to the steric resonator. (Appendix 4) The three-dimensional filter according to claim 3, wherein the second dielectric substrate has a recess, and the three-dimensional resonator is fitted in the recess. (Appendix 5) A drive mechanism connected to the first dielectric substrate, The three-dimensional filter according to Appendix 3 or 4, wherein the three-dimensional filter further comprises. (Supplementary note 6) The three-dimensional filter according to any one of Supplementary note 1 to 5, wherein the three-dimensional resonator is a cylindrical or rectangular parallelepiped dielectric block. (Appendix 7) Conductor container and A three-dimensional filter including a pair of superconducting films facing each other and a steric resonator located between the pair of superconducting films, which is arranged in the conductor container, and one of the pair of superconducting films A three-dimensional filter that is movably held with respect to the three-dimensional resonator, The first and second waveguides connected to the conductor container in a direction orthogonal to the movable direction of the one superconducting film. Tunerable filter device including. (Appendix 8) The conductor container has an opening in the connection surface with the first and second waveguides. The tunable filter device according to Appendix 7, further comprising a slide plate that can be inserted horizontally into the opening. (Appendix 9) A drive mechanism that changes the position of the one superconducting membrane with respect to the three-dimensional resonator. The tunable filter apparatus according to Appendix 7 or 8, further comprising. (Appendix 10) The first and second conductor containers placed adjacent to each other, With the openings formed on the adjacent surfaces of the first and second conductor containers, The first and second three-dimensional filters arranged in the first and second conductor containers, respectively, A shutter that is inserted between the first and second conductor containers to change the area of the opening, Tunerable filter device equipped with. (Appendix 11) Each of the first and second steric filters includes a pair of superconducting membranes and a steric resonator located between the pair of superconducting membranes. The tunable filter device according to Appendix 10, wherein one of the pair of superconducting membranes is movably held with respect to the three-dimensional resonator. (Appendix 12) A first waveguide connected to the first conductor container on the side opposite to the opening, A second waveguide connected to the second conductor vessel on the side opposite to the adjacent side, Including The tunable filter device according to Appendix 10 or 11, wherein the movable range of the one superconducting film of each of the three-dimensional filters is perpendicular to the extending direction of the first and second waveguides.

<figref num="1">It is a schematic block diagram of the tunable filter apparatus of Example 1 of this invention.</figref><figref num="2">This is a configuration example of a three-dimensional filter used in the tunable filter device shown in FIG.</figref><figref num="3">It is the schematic of the simulation sample for measuring the frequency characteristic of the tunable filter of Example 1.</figref><figref num="4A">It is a graph of the characteristic (S21) of the tunable filter of Example 1.</figref><figref num="4B">It is a graph of the characteristic (S11) of the tunable filter of Example 1.</figref><figref num="5">It is a schematic block diagram of the two-stage tunable filter apparatus of Example 2 of this invention.</figref><figref num="6">It is a schematic diagram for demonstrating the tuning effect of the two-stage tunable filter apparatus of FIG.</figref><figref num="7A">It is a figure of the simulation model sample of the two-stage tunable filter apparatus of Example 2.</figref><figref num="7B">It is a figure of the simulation sample of the two-stage tunable filter apparatus of Example 2.</figref><figref num="7C">It is a figure of the simulation sample of the two-stage tunable filter apparatus of Example 2.</figref><figref num="8A">It is a characteristic graph when the length Ls of the bond adjusting plate is made constant, and the thickness Dup of the dielectric substrate with a superconducting film is changed.</figref><figref num="8B">It is a characteristic graph when the length Ls of the bond adjusting plate is made constant, and the thickness Dup of the dielectric substrate with a superconducting film is changed.</figref><figref num="8C">It is a characteristic graph when the length Ls of the bond adjusting plate is made constant, and the thickness Dup of the dielectric substrate with a superconducting film is changed.</figref><figref num="9A">It is a characteristic graph when the thickness Dup of the dielectric substrate with a superconducting film is kept constant and the length Ls of the coupling adjusting plate is changed.</figref><figref num="9B">It is a characteristic graph when the thickness Dup of the dielectric substrate with a superconducting film is kept constant and the length Ls of the coupling adjusting plate is changed.</figref><figref num="9C">It is a characteristic graph when the thickness Dup of the dielectric substrate with a superconducting film is kept constant and the length Ls of the coupling adjusting plate is changed.</figref>

Code description

1,50 tunable filter device 10, 60A, 60B Dielectric Substrate (Second Dielectric Substrate) 11, 61A, 61B Dielectric block (stereoscopic resonator) 12, 62A, 62B Superconducting membrane 13, 53A, 53B Dielectric substrate with superconducting film 13a, 53a, 53a'Dielectric substrate (first dielectric substrate) 13b, 53b, 53b'Superconducting membrane 29, 69A, 69B drive mechanism 22, 52A, 52B Conductor container 30A, 30B, 70A, 70B waveguide 31A, 31B, 51A, 51B openings 113 shutter 114, 114A, 114B Orifice