Method of manufacturing light-emitting device

The present invention is a short circuit between a cathode and an anode in a light emitting device including a light emitting element formed on a substrate. The present invention relates to a method of detecting a (short) location, repairing the location, and manufacturing the device as a light emitting device. Also , The IC is mounted on a light emitting panel manufactured by sealing the light emitting element formed on the substrate with a sealing substrate. Detects a short circuit in the mounted light emitting module, repairs it, and manufactures a light emitting device. Regarding how to do it. In this specification, the light emitting panel and the light emitting module are collectively referred to as a light emitting device. Refer to. Furthermore, the short-circuited part is detected in this way, the detected part is repaired, and a light emitting device is manufactured. The thin film forming apparatus capable of this is also included in the present invention.

Since the light emitting element emits light by itself, it has high visibility and is a buckler required for a liquid crystal display (LCD). It does not require a light and is ideal for thinning, and there is no limit to the viewing angle. Therefore, in recent years, it emits light. Light emitting devices using elements are attracting attention as an alternative to CRTs and LCDs.

The light emitting element is Electro Luminescence (by applying an electric field). A layer containing an organic compound from which the generated luminescence) can be obtained (hereinafter referred to as an organic compound layer). And an anode and a cathode. Luminescence in organic compounds is a singlet excited state Emission (fluorescence) when returning from the ground state and light emission (re) when returning from the triplet excited state to the ground state The method of detecting and repairing a short circuit according to the present invention is either light emission. It can also be applied to a light emitting device using.

In this specification, all the layers provided between the anode and the cathode are defined as organic compound layers. .. Specifically, the organic compound layer includes a light emitting layer, a hole injection layer, an electron injection layer, a hole transport layer, and an electron transport. Layers and the like are included. Basically, the light emitting element has a structure in which the anode / light emitting layer / cathode are laminated in this order. In addition to this structure, the anode / hole injection layer / light emitting layer / cathode and the anode / hole injection layer / emission It may have a structure in which an optical layer, an electron transport layer, a cathode, etc. are laminated in this order.

Further, in the present specification, an element formed of an anode, an organic compound layer and a cathode is referred to as a light emitting element. Bu.

<p> A light emitting device is formed by forming an organic compound layer between the anode and the cathode. Soshi When a voltage is applied to the electrodes of the light emitting element, electrons are injected into the organic compound layer from the cathode. Holes are injected into the organic compound layer from the anode.</p><p> Then, in the organic compound layer, the energy generated by the recombination of electrons and holes -The organic compound that forms the organic compound layer emits light.</p><p> However, if a part of the organic compound layer is lost for some reason, the space between the cathode and the anode will be increased. Since a short circuit occurs and a leak current flows through the short circuit, the light emitting element is extinguished.</p><p> The cause of the loss of the organic compound layer is the electric power formed before the formation of the organic compound layer. A place where the organic compound layer is not uniformly formed and is chipped because the polar surface is not flattened. When the organic compound layer is not sufficiently formed on the electrode due to dust on the electrode. There is a throat. Then, the other electrode is formed on the organic compound layer having these defects. When this is done, the area between the cathode and the anode is shown at the part where the organic compound layer is not formed (the defective part). To</p><p> FIG. 10A briefly shows a cross-sectional view of the light emitting element 1104. Organicization on anode 1101 A compound layer 1102 is formed, and a cathode 1103 is formed on the organic compound layer 1102. The light emitting element 1104 is formed. In addition, in the light emitting element 1104, organic compounding If the physical layer 1102 has a defective portion 1105 in which a part of the material layer 1102 is missing, it is shaded on the organic compound layer 1102. When the pole 1103 is formed, the anode 1101 and the cathode 1103 are in contact with each other at the defective portion 1105. A short circuit occurs because it is formed.</p><p> In the present specification, the normal portion 1106 having an organic compound layer between both electrodes is organic. In the defective portion of the compound layer 1102, the portion where the two electrodes are in contact is the defective portion 11 I'll call it 05.</p><p> Normally, the light emitting element 1104 is generated by applying a power supply voltage from an external power supply 1107. Shows light.</p><p> FIG. 10B shows the case where the light emitting element 1104 does not have the defective portion 1105. Therefore, the case where only the normal part 1106 in FIG. 10 (A) is shown is shown. In this case, external power supply Power supply voltage E from 1107_oriWhen is applied, the voltage E is applied to the light emitting element 1104._dioIs applied To. The wiring resistance at this time is R._wirRepresented by, the voltage applied to the wiring is E_wirIt is represented by.</p><p> On the other hand, in FIG. 10 (C), the light emitting element 1104 shows the defective portion 1 shown in FIG. 10 (A). The case of having 105 is shown. In this case, the voltage E from the external power supply 1107_oriIs marked When applied, the voltage applied to the normal section 1106 is the voltage E shown in FIG. 10 (B)._dioThan Also small, E'_dioWill be. This is the current I flowing through the defective part 1105._defBy wiring This is because the pressure drop occurs, and the wiring voltage is E._wirFrom E'_wirBy reducing to is there.</p><p> In the light emitting element, a forward bias is applied to both electrodes, and a current I is applied to the organic compound layer._oriFlows Since light emission is obtained in the organic compound layer, a current flows through the defective part rather than the organic compound layer. If it does, the light emitting element does not emit light.</p><p> That is, when a forward bias is applied to the light emitting element including the defective portion, most of the current is actually generated. Since it flows to the defective part, the current I that flows through the normal part_dioIs almost nonexistent. From the above In a light emitting device having a defective portion, a current does not easily flow through the organic compound layer, so that the light emitting element The child causes a decrease in brightness and quenching.</p><p> In addition to the decrease in brightness and quenching of the light emitting element, there is a short circuit in the defective part. As a result, current always flows through the defective part, which accelerates the deterioration of the organic compound layer near the defective part. ..</p><p> Further, in the quenching of the light emitting element by the defective portion 1105, a plurality of pixels having the light emitting element are formed. It causes a decrease in the brightness of the display in the pixel part, and consumes power due to the generation of leakage current. There are problems such as increasing power.</p><p> In view of the above problems, the present invention inspects a defective portion in the light emitting element, and when the defective portion is detected. A method of repairing a defective part to manufacture a light emitting device, and a method of manufacturing a light emitting device using this method. An object of the present invention is to provide a thin film forming apparatus.</p>

<p> The present invention has been made to solve the above problems, and marks a reverse bias on the light emitting element. When added, it utilizes the fact that an electric current flows through the defective portion.</p><p> FIG. 1A shows a pixel portion 101 formed on the substrate, and a plurality of pixels 102. Is formed. These pixels are light emitting devices formed of an anode, a cathode, and an organic compound layer. Each has.</p><p> When these light emitting elements have a defective portion 103, the cross-sectional structure thereof is shown in FIG. 1 (B). As shown, when a voltage is applied to both electrodes of the light emitting element from the external power supply 108, the defective part Current flows through 103. However, when an electric current flows through the defective portion 103, an electric current is applied to the organic compound layer 107. The light emitting element 104 is extinguished because the flow becomes difficult to flow.</p><p> Therefore, in the present invention, a luminescent element composed of a cathode 105, an anode 106, and an organic compound layer 107 A reverse bias is applied to the child 104 from the external power supply 108.</p><p> At this time, the organic compound layer 107 is missing in the defective portion 103 of the light emitting element 104. Therefore, the cathode 105 and the anode 106 are short-circuited. In other words, it is emitted when a reverse bias is applied. A current flows through the defective portion 103 of the optical element 104. On the other hand, it does not have a defective portion 103. Almost no current flows through the light emitting element 104.</p><p> Therefore, in the present invention, by applying a reverse bias, a current flows only in the defective portion 103. Then, by detecting the current flowing at this time, the position of the defective portion 103 is specified.</p><p> Next, the identified defective portion 103 is irradiated with a laser, and the cathode and the positive portion 103 are exposed to the cathode and the positive electrode. Insulate the part where the pole is short-circuited. By insulating it, a reverse bias is applied. The current that flows at the time can be reduced or completely prevented. In addition, in this specification, the reverse The current that flows when a bias is applied is called a reverse current.</p><p> As described above, by insulating the short-circuited part, a defect that occurs when a forward bias is applied. Leakage current in part 103 can be prevented, which allows the desired current to be applied to the organic compound layer 107. Since it flows, the light emitting element 104 can emit light with a desired brightness.</p><p> Further, in the present invention, the organic compound layer and the passivation film of the light emitting device are formed. The film formation chamber, the processing chamber for sealing, and the present invention are used to identify the position of the defective portion and repair it. A light emitting device can be manufactured by using a thin film forming device having a processing chamber. In addition, this thin By manufacturing a light emitting device using a film forming device, a light emitting element is formed and then sealed. The defective part can be repaired and a light emitting device can be manufactured.</p>

<p> As described above, according to the present invention, the defective portion in the light emitting element is inspected, and the position of the defective portion is inspected. By identifying the location and irradiating the defective part with a laser, the shock at the anode and cathode of the light emitting element Leakage current at the short circuit can be prevented by insulating the current. By this Therefore, the light emitting element that has been extinguished can be made to emit light again. In addition, according to the present invention, the defective portion may be removed. Since the light emitting element can be repaired to manufacture a light emitting device, it can be used in the production of a light emitting device. Yield can be improved.</p>

<figref num="1">The figure explaining the inspection and repair method of the defective part by this invention.</figref><figref num="2">The figure explaining the inspection and repair method of the defective part by this invention.</figref><figref num="3">Pixel circuit diagram.</figref><figref num="4">The circuit diagram of a pixel and the figure which shows the operation of the pixel part at the time of inspection.</figref><figref num="5">A photograph of the defective part observed with an emission microscope.</figref><figref num="6">The figure which shows the structure of the film forming apparatus used in this invention.</figref><figref num="7">The figure explaining the cross-sectional structure of a light emitting device.</figref><figref num="8">The figure explaining the cross-sectional structure of a light emitting device.</figref><figref num="9">The figure which shows an example of an electric appliance.</figref><figref num="10">The figure explaining the conventional example.</figref><figref num="11">The figure explaining the electrical characteristic at the time of applying the reverse bias in a defect part.</figref>

Here, as an embodiment of the present invention, there is a defect in the active matrix type light emitting device. The inspection method of the part and the repair method of the detected defective part will be described with reference to FIG. In addition, it should be noted. The present invention can be similarly implemented in a passive type light emitting device. In FIG. 2 (A), the TFT 202 is formed on the substrate 201 and is electrically connected to the TFT 202. Pixel electrode 203 (anode), organic compound layer 204 formed on the pixel electrode 203, The cathode 205 is formed therein and the light emitting element 206 is formed, and the one formed upside down is shown. That is, for each pixel 102 shown in FIG. 1 (A), the anode 205 and organic as shown in FIG. 2 (A) A light emitting element 206 composed of a compound layer 204 and a cathode 205 is formed, and a pixel portion 101 is formed. Is forming. Further, after the light emitting element 206 is formed, the space 208 is provided inside and is sealed by the sealing substrate 209. A stop structure is formed. In addition, here, a light emitting device formed up to a sealing structure is shown. However, in the present invention, when the light emitting element 206 is completed (before sealing the light emitting element), the defective portion 2 It is possible to inspect and repair 07. The method in this case will be described in a later embodiment. explain in detail.

In the light emitting device, as shown in 207, the organic compound layer 204 is missing, and the cathode 2 The part where 05 and the anode 203 are short-circuited becomes the defective part 207, which is a luminescent element. The child is more defective than the organic compound layer 204 even when a forward bias is applied from an external power source and a current is applied. No light is emitted because a current flows through unit 207.

Therefore, in the present invention, a current is applied to the defective portion 207 by applying a reverse bias from an external power source. The defective part 207 is identified by observing the light emitted by the current flowing at this time. U.

Specifically, a reverse bias is applied to the short portion between the electrodes to allow a current to flow, and this current is used. To measure the number of photons in the emitted light by observing it with an emission microscope. Therefore, the position of the defective portion 207 that is short-circuited is specified. At this time, the light emitting element 206 The reverse bias to be applied is applied in the range of 1 to 15V. The emission microscope is the reverse. The number of photons emitted from the current that flows when a bias is applied is measured by an optical microscope and an ultra-sensitive turtle. It is a device that measures with La (photon counting camera). In carrying out the present invention Is a hot electron device (C320) manufactured by Hamamatsu Photonics Co., Ltd. as an emission microscope. 0 series) is used.

This camera consists of II (Image Intensifier) and an imaging camera, which emits extremely weak light. You can get it. The light emitted here is taken to the image processor as a video signal. It is embedded, image-processed, and displayed on a TV monitor (CRT: Cathode Ray Tube). .. At this time, by superimposing it on the pattern image on the substrate that was photographed in advance, the characteristics of the light emitting part It becomes possible to set.

Generally, when a current leak occurs due to a short circuit between electrodes, visible light to infrared light It is known that light emission with a wide continuous spectrum is detected. Ultra high used in the present invention Sensitivity cameras (photon counting cameras) have a bandgap of crystals containing Si. Since it utilizes the transmission of infrared light with a wavelength longer than the wavelength corresponding to energy, the opposite is true. It is possible to detect the current flowing through the defective part 207 when a bias is applied via the substrate. is there.

In FIG. 2 (B), among the plurality of pixels shown in FIG. 2 (A), the defective portion 207 is shown. Explains how to identify the position of this defective part 207 and repair it with respect to the pixel 208 I will reveal.

The board 201 is provided on the XYZ stage 210 from the external power supply 211 to the FPC2. A reverse bias is applied to the light emitting element 206 formed on the substrate 201 via 12. this At this time, a current (reverse current) flows through the defective portion 207 of the light emitting element 206.

The current flowing here is accompanied by light emission 213. The photons that form this emission 213 are shutters. -(1) When 214 opens, an ultra-sensitive camera via a condenser lens 215 and a half mirror 216 Detected by 217 (photon counting camera) and used as a video signal for image processing Color monitor by performing image processing by the science mechanism 218 (image processor) -Displayed on 219 (CRT). At this time, the shutter (2) 222 is closed.

In the color monitor 219, the current flowing through the defective part of the light emitting element of the pixel depends on the current. Since the color is displayed as the distribution of the number of photons of the generated light, the part where the photons are displayed in color is the defective part. Assuming that it is 207, the position can be specified.

In the present invention, the ultrasensitive camera 217 is connected to the alignment mechanism 221. The alignment mechanism 221 uses the position data of the defective portion 207 identified by the ultrasensitive camera 217. To move the XYZ stage 210 to the position where the defective part 207 is irradiated with the laser. Send the issue. As a result, the defective portion 207 is moved to the position where the laser is irradiated.

Next, close the shutter (1) 214, open the shutter (2) 222, and illuminate the laser. The laser 224 from the firing mechanism 223 is incident. The laser 224 is a half mirror. The defective portion 207 is irradiated through 216 and the condenser lens 215.

By irradiating the identified defective portion 207 with a laser as described above, the defective portion is formed. Repair 207. Specifically, the cathode 205 and the anode 203 in the defective portion 207 are connected. The part of the cathode is insulated by irradiating it with a laser, and the space between the cathode 205 and the anode 203 is Insulated.

As a method of insulating the defective portion 207, a cathode 205 or an anode 203 is formed. Insulation by converting the material to be an oxide by laser irradiation, or by laser irradiation There is a method of insulating the defective portion 207 by physically separating the shorted portion. Book In the invention, any insulation is possible by adjusting the power of the laser.

When irradiating a laser in the present invention, the anode 203 is irradiated to perform its function. It is necessary to adjust the irradiation power and irradiation time of the laser so that it will not be destroyed.

As the laser used in the present invention, a dye laser is preferable. Dye laser When using, the wavelength range can be in the range of 375 to 900 nm. Depending on the wavelength range used, laser dyes such as coumarin and rhodamine can be used. Wear. As the laser dye used at this time, a known dye may be used. Also, for the present invention The beam diameter of the laser is preferably larger than the diameter of the defective portion 207 to be irradiated. It is desirable that it is 1.0 to 3.0 μm.

As described above, a forward bias is applied to the light emitting element forming the pixels of the light emitting device, and the light emitting element If there is a defect 207 in 206, a leak current is generated at the short circuit between the anode 203 and the cathode 205. Therefore, it becomes difficult for the current to flow through the organic compound layer 204 of the light emitting element 206, and the light emitting element 2 06 is extinguished. That is, this pixel is quenched.

Therefore, in the present invention, a defect is first obtained by applying a reverse bias to the light emitting element 206. By passing a current through part 207 and detecting the light generated from this current, the position of defective part 207 Identify the location and irradiate this defective part 207 with a laser to insulate and repair the defective part 207. This allows the pixels to emit light again when a forward bias is applied.

<p> In this embodiment, an active matrix having two thin film transistors (TFTs) in each pixel. An example in which the present invention is used for a box-type light emitting device will be described.</p><p> Fig. 3 shows a light emitting device in which a defective portion of a light emitting element was inspected and repaired using the present invention. The circuit diagram of the pixel is shown. Each pixel has a source signal line Si (i is one of 1 to x) , Current supply line Vi (i is one of 1 to x) and gate signal line Gj (j is 1 to y) It has a deviation or one).</p><p> In addition, each pixel has a switching TFT301, a current control TFT302, and a light emitting element. It has a child 303 and a capacitor 304.</p><p> The gate electrode of the switching TFT 301 is connected to the gate signal line (Gj). In addition, the source area and drain area of the switching TFT301 are one of the source signal lines ( Si), the other is connected to the gate electrode of the current control TFT 302.</p><p> The source area of the current control TFT 302 is connected to the current supply line (Vi) and is drayed. The region is connected to one of the two electrodes of the light emitting device 303. Light emitting element Of the two electrodes that the 303 has, it is connected to the drain region of the current control TFT 302. Those who do not have it are connected to the opposite power supply 307.</p><p> Of the two electrodes of the light emitting element 303, the drain of the current control TFT 302 The electrodes connected to the region are called pixel electrodes, and the electrodes connected to the counter power supply 307 are paired. It is called a direction electrode.</p><p> The capacitor 304 is the gate electrode of the current control TFT 302 and the current supply line Vi. It is formed between.</p><p> FIG. 4A shows the pixel portion of the light emitting device having a plurality of pixels shown in FIG. Pixel part 306 Sets the source signal lines S1 to Sx, the current supply lines V1 to Vx, and the gate signal lines G1 to Gy. Have. A plurality of pixels 305 are formed in a matrix in the pixel unit 306.</p><p> FIG. 4 (B) shows the TFT in each pixel when inspecting and identifying the defective portion of the light emitting element 303. And the height of the voltage input to the current supply line Vi and the counter electrode are shown. Light emitting element 303 When inspecting the defective part of, the switching TFT301 and current control TFT3 for each pixel. Keep both 02 on. Then, the voltage of the current supply line Vi and the voltage of the counter electrode are combined. A predetermined reverse bias is applied to the light emitting element. The voltage of the counter electrode is determined by the pixel electrode. At the time of the anode, a voltage higher than the voltage of the current supply line Vi is applied as shown in Fig. 4 (B). When the pixel electrode is a cathode, a voltage lower than the voltage of the current supply line Vi is applied.</p><p> In this embodiment, the case where the pixel electrode is the anode and the counter electrode is the cathode is shown. However, specifically, a voltage of + 1V is applied to the anode and a voltage of + 9V is applied to the cathode.</p><p> As described above, in applying a low voltage to the anode of the light emitting element and applying a high voltage to the cathode. Therefore, the current flows only in the defective portion on the light emitting element. In this way, a current is passed through the defective part. By observing this with an emission microscope, the defective part is identified.</p><p> Emission microscopes measure the number of photons that form the luminescence that occurs when an electric current flows. It is a device that can measure. For each number of photons measured in advance with an emission microscope Set so that it is displayed in different colors. This causes defects when a reverse bias is applied. The position of the defective portion can be specified from the current flowing through the portion.</p><p> In addition, since the emission microscope captures an image of the light emitting element in advance, the measured light By displaying the number of children in different colors and displaying them in layers, it is possible to identify the exact defective part. Wear.</p><p> Here, the light emitting element of the pixel part is actually observed using an emission microscope, and thus the light emitting element is missing. Figure 5 shows how the depression was identified. In Fig. 5, the part marked with a circle is the actual part. It is a defective part, and on a normal color monitor, it is displayed in different colors in the image photograph of the black and white pixel part. Is done.</p><p> The color-coded display of the number of photons used here is generated from the current flowing through the defective part. It means to display by color for each number of photons that form light. That is, the number of detected photons is small. If it is, it is displayed by the distribution of blue points, and if it is a little more, it is displayed by the distribution of yellow points. And when it becomes more, it is displayed in different colors such as being displayed by the distribution of red dots. To say that.</p><p> After identifying the defective part with an emission microscope, monitor it. By irradiating the laser from the laser irradiation mechanism while observing, the show in the defective part It is possible to insulate the part of the tongue and repair the defective part.</p><p> In this example, a dye laser is used. Specifically, the wavelength is set to 440 nm and the power is set. Set to 20 mJ, use coumarin 440 as the laser dye, and set the beam diameter to 2.3 μm. Irradiate the defective part with a laser.</p><p> Further, in the insulation of the short portion in this embodiment, the cathode of the short portion is formed. Insulation is achieved by oxidizing the material.</p><p> Inspecting and repairing defective parts of the light emitting element is performed on all pixels 305 of the pixel part 306. It may be performed all at once, or it may be performed line by line or pixel by pixel.</p><p> From the above, laser irradiation is performed on the defective part of the identified light emitting element to insulate it. Then, when a forward bias voltage is applied to the light emitting element, a current is passed through the organic compound layer of the light emitting element. , The organic compound layer can be made to emit light.</p><p> In addition, since the current always flows in the defective part, the organic compound layer existing around the defective part is inferior. It was easy to change. However, it is possible to prevent leakage current by insulating it. Therefore, deterioration of the organic compound layer existing around the defective portion can be prevented.</p><p> Based on the above, after inspecting and identifying the defective part of the light emitting element of the light emitting device, laser irradiation By repairing with, the light emitting element that had been extinguished due to the defect can be made to emit light again. it can.</p><p> The present invention shown above is not only applicable to a light emitting device having the above configuration. Book The invention can be used for a light emitting device having any configuration. The T of the light emitting device The FT may be a TFT using an organic semiconductor.</p>

<p> In this embodiment, the organic compound is formed on the substrate in which the pixel electrodes (anodes) of the light emitting elements are formed on the substrate. When the material layer and the cathode are formed, the inspection and repair of the present invention are carried out, and the light emitting element has a defective portion. If so, repair it immediately after forming the cathode (before sealing) and then further seal. A case where all the steps up to this point are performed in the same device will be described. In addition, this Example In, after forming a pixel electrode, which is an anode, on a substrate and forming an organic compound layer on the pixel electrode. A light emitting device having a structure of forming a cathode has been described, but the present invention is a cathode. A structure in which a pixel electrode is formed, an organic compound layer is formed on the electrode, and an anode is further formed. It is also possible to carry out for the light emitting element of. However, it is not necessary to inspect and repair defective parts. , In any structure, it is from the anode side.</p><p> The film forming apparatus used in this embodiment will be described with reference to FIG. In Figure 6, 60 Reference numeral 1 denotes a transport chamber, and the transport chamber 601 is provided with a transport mechanism (A) 602 to carry the substrate 603. Sending is done. The transport chamber 601 has a decompressed atmosphere, and is connected to each processing chamber by a gate. It is tied. When the gate is opened, the transfer mechanism (A) 60 is used to deliver the substrate to each processing chamber. Made by 2. To reduce the pressure in the transport chamber 601, use a dry pump or mechanical pump. -Exhaust pumps such as star pumps, turbo molecular pumps (magnetic levitation type) or cryopumps It is possible to use a pump, but in order to obtain a high vacuum state with higher purity, a magnetic levitation type is used. Turbo molecular pumps are preferred.</p><p> Each processing room will be described below. Since the transport chamber 601 has a decompressed atmosphere, , All processing chambers directly connected to transport chamber 601 are equipped with exhaust pumps (not shown) ing. Exhaust pumps include the above-mentioned dry pump, mechanical booster pump, and turbo. Molecular pumps (magnetic levitation type) or cryopumps are used, but again magnetic levitation type Turbo molecular pumps are preferred.</p><p> First, 604 is a load room for setting (installing) the board, and also serves as an unload room. I'm sleeping. The load chamber 604 is connected to the transport chamber 601 by a gate 600a, and the substrate is here. A carrier (not shown) with 603 set is placed. The load chamber 604 carries the board. The room may be distinguished between the one for entering and the one for carrying out the board. Further, the load chamber 604 is exhausted as described above. It is equipped with a pump and a purge line for introducing high-purity nitrogen gas or rare gas. Na A turbo molecular pump is desirable as the exhaust pump. In addition, this purge line , A gas refiner is provided, and impurities (oxygen and water) of the gas introduced into the device are removed in advance. It is supposed to be left.</p><p> In this embodiment, as the substrate 603, a transparent conductive film that serves as an anode of the light emitting element is also formed. Use a substrate. In this embodiment, the substrate 603 is set on the carrier with the surface to be filmed facing down. To. This is a face-down method (also known as a depot-up method) when film formation is performed later by the vapor deposition method. This is to make it easier to do. In the face-down method, the surface to be filmed on the substrate faces downward. It refers to a method of forming a film in a state of being in the state, and according to this method, it is possible to suppress the adhesion of dust and the like. ..</p><p> Next, 605 indicates the surface of the anode or cathode (anode in this embodiment) of the light emitting device. It is a processing room (hereinafter referred to as the pretreatment room) that processes the above, and the pretreatment room 605 is located at the gate 600b. It is connected to the transport chamber 601. The pretreatment room changes variously depending on the manufacturing process of the light emitting element. However, in this embodiment, the surface of the anode made of a transparent conductive film is irradiated with ultraviolet light in oxygen. While doing so, allow it to be heated at 100 to 120 ° C. Such pretreatment is performed on the anode of the light emitting element. It is effective when treating the surface.</p><p> Another pretreatment method is 200-400 while irradiating plasma in oxygen or hydrogen. The method of heating at ° C is also effective, and in this case, plasma treatment and heat treatment are possible. It suffices to equip the pretreatment room with such a mechanism.</p><p> Next, 606 is a film forming chamber for forming an organic compound by a vapor deposition method, and is a film forming chamber (A). Called. The film forming chamber (A) 606 is connected to the transport chamber 601 via the gate 600c.</p><p> In this embodiment, a light emitting element is formed in the film forming portion 607 in the film forming chamber (A) 606. The machine compound layer is formed. In this example, an organic compound that develops red, green, and blue colors. A layer is formed. Therefore, the multiple evaporation sources provided in the film forming chamber (A) 606 are these. The organic compound forming the organic compound layer of is provided.</p><p> The organic compound layer includes a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, and an electron injection layer. A plurality of layers such as are laminated and formed. In this example, an organic compound that emits light in each color Layers Only the material that forms the light emitting layer is changed, and all other layers are shaped using the same material. To be done.</p><p> Copper phthalocyanine or the like can be used as the hole injection layer, and the hole transport layer can be used. , MTDATA (4,4', 4''-tris (3-methylphenylphenylamino) triphenylamine) and α-NP D and the like can be used, but other known materials can also be used.</p><p> The light emitting layer that develops red color is Alq.₃Doping with DCM Can be formed. In addition, Eu complex (Eu (DCM)₃(Phen), aluminum Kinorirat complex (Alq₃) Use DCM-1 as a dopant. However, other known materials can also be used.</p><p> In addition, CBP and Ir (ppy) are the light emitting layers that develop a green color.₃To co-deposit Can be formed more. In addition to this, aluminum quinolylate complex (Alq₃), Be Nzoquinolinola toberylium complex (BeBq) can be used. Furthermore, aluminum Kinorirat complex (Alq₃) A material such as coumarin 6 and quinacridone dopa in the cement However, other known materials can also be used.</p><p> Furthermore, as the light emitting layer that develops a blue color, DPVBi, which is a distyryl derivative, and azo Zinc complex having a methine compound as a ligand and DPVBi doped with perylene Although it can be used, other known materials may be used.</p><p> Further, after the light emitting layer is formed, an electron transport layer or an electron injection layer may be formed. In addition, electronic transportation As the layer feed, 1,3,4-oxadiazole derivative and 1,2,4-triazole derivative (T) Materials such as AZ) can be used. Further, as the buffer layer 206, fluorinated Tium (LiF), aluminum oxide (Al)₂O₃), Lithium Acetylacetone (L) Materials such as iacac) may be used, but other known materials can be used. is there.</p><p> Further, the film forming chamber (A) 606 is connected to the material exchange chamber 614 via the gate 600f. The material exchange chamber 614 is provided with a heater for heating the exchanged material. In advance Impurities such as water can be removed by heating the material. The temperature applied at this time is 200 It is desirable that it is below ° C. In addition, the material exchange chamber 614 should be decompressed inside. It is equipped with an exhaust pump that can be heated by adding or replacing evaporative material from the outside. After processing, the inside is decompressed. Then, when the pressure is the same as in the film formation chamber By opening the gate 600f, it became possible to prepare the evaporation material for the evaporation source inside the film formation chamber. There is. The evaporation material is provided in the evaporation source in the film forming chamber by a transport mechanism or the like.</p><p> Next, 608 is a film forming chamber for forming an organic compound by a spin coating method (coating method). Yes, it is called the film formation chamber (B). The film formation chamber (B) 608 is true between the transport chamber (A) 601 and the film chamber (B) 608. An air exhaust processing chamber 610 is provided, and only the film formation chamber (B) 608 can be processed at normal pressure (atmospheric pressure). The configuration is shown.</p><p> In this embodiment, since the inside of the thin film forming apparatus is all under reduced pressure, a polymer material is used. When forming a film by the coating method, the film is formed at normal pressure filled with an inert gas such as nitrogen or a rare gas. Therefore, in order to transport the substrate to the film forming chamber 608, the inside of the film forming chamber 608 and other film forming equipment The pressure difference in the area must be overcome.</p><p> Therefore, when forming a polymer material in this embodiment, first, the vacuum exhaust processing chamber 610 Depressurize to the same pressure as the transport chamber (A) 601 and open the gate 600d in that state. Transport the board. Then, after closing the gate 600d, the inside of the vacuum exhaust processing chamber 610 is inactive. Purge with a sex gas, and when the pressure returns to normal pressure, open the gate 600 g and move the substrate to the film formation chamber 608. Transport. Here, the entire stage may be transported together with the substrate, or a dedicated transport means may be used. You may.</p><p> The polymer-based organic compound used here is polyparaphenylene vinylene (PP). V) system, polyvinyl carbazole (PVK) system, polyfluorene system and polythiophene induction It is possible to use known polymer-based organic compounds in addition to the body (for example, PEDOT). ..</p><p> As a result, the hole injection layer is formed by the spin coating method in the film forming portion 609 of the film forming chamber 608. It is formed. The film forming chamber 608 is provided with a heating mechanism and has a function of drying after the film is formed. May be provided.</p><p> After the film formation of the polymer-based organic compound is completed, open the gate 600 g and open the vacuum exhaust processing chamber 6 Transport the board to 10 and perform vacuum exhaust with the gate 600g and gate 600d closed. .. When the vacuum exhaust processing chamber 610 reaches the same decompression state as the transport chamber (A) 601 in this way. , Open the gate 600d and transfer the board to the transfer chamber (A) 601.</p><p> Further, the film forming chamber (B) 608 is connected to the material exchange chamber 615 via the gate 600h. The material exchange chamber 615 is provided with a heater for heating the exchanged material. In advance Impurities such as water can be removed by heating the material. The temperature applied at this time is 200 It is desirable that it is below ° C. In addition, the material exchange chamber 615 should be decompressed inside. Because it is equipped with an exhaust pump that can After adding or exchanging the evaporative material from the outside and heat-treating, the inside is decompressed. And , Open the gate 600h when the pressure is the same as in the film formation chamber, and the evaporation source inside the film formation chamber. It is possible to prepare an evaporative material. The evaporative material depends on the transport mechanism, etc. It is provided as an evaporation source in the film formation chamber.</p><p> Based on the above, in this embodiment, it is also possible to form the organic compound layer by using a thin-film deposition method. It can also be formed using the coating method, and further formed using these methods. A plurality of layers may be laminated to prepare an organic compound layer.</p><p> Next, 611 is a conductive film that becomes the anode or cathode of the light emitting element by the vapor deposition method (in this embodiment). It is a film forming chamber for forming a film (a metal film serving as a cathode), and is called a film forming chamber (C). Film formation chamber (C) The 611 is connected to the transport chamber 601 via the gate 600e. In this embodiment, the film forming chamber (C) ) In the film forming section 612 in 611, an Al-Li alloy is used as a conductive film that serves as a cathode for the light emitting element. A film (alloy film of aluminum and lithium) is formed. In addition, the 1st or 2nd group of the periodic table It is also possible to co-deposit the elements belonging to the above and aluminum. Co-deposited is simultaneous vapor deposition A thin-film deposition method in which a cell is heated and different substances are mixed at the film formation stage.</p><p> In the film forming chamber (A) 606 and the film forming chamber (C) 611, image sensors are installed in the film forming chamber. Having a CCD (Charge Coupled Device) known as a metal mass It is possible to accurately align the substrate and the metal mask when forming a film using the It is preferable because it does.</p><p> Further, the film forming chamber (A) 606, the vacuum exhaust processing chamber 610, and the film forming chamber (C) 611 are provided. Exhaust pumps include dry pumps, mechanical booster pumps, and turbo molecular pumps ( It is possible to use a magnetic levitation type) or a cryopump, but in this embodiment, Rio pumps and dry pumps are preferred.</p><p> Further, the film forming chamber (A) 606, the vacuum exhaust processing chamber 610 and the film forming chamber (C) 611 are exhausted. The pressure is reduced by the pump. The ultimate vacuum at this time is 10^-6It is desirable to be Pa or higher I'm sorry. In order to obtain such a degree of vacuum, the surface area of the inside of the film formation chamber is reduced by electrolytic polishing. Is effective.</p><p> The transport chamber (A) 601 is connected to the repair chamber 613 via a gate 600i. .. In the repair chamber 613, the defect detection mechanism 622 is used to detect the defect portion of the light emitting element formed up to the cathode. Furthermore, the defective part is irradiated with a laser by the laser irradiation mechanism 623 to detect the defective part. Insulate. In this embodiment, the defect detection mechanism 622 that identifies the position of the defect portion is used. , Emission microscope is used.</p><p> In addition, when identifying defective parts with an emission microscope, a reverse bias is applied to the light emitting element. If there is a defective part in this state, let the current flow through the defective part. The reverse bias applied at the time is applied in the range of 1 to 15V.</p><p> The board for which the defective part of the light emitting element was repaired in the repair chamber 613 is the gate 600. It is transported to the transport chamber (B) 616 connected to the repair chamber 613 via j. further , Connected to the transport chamber (B) 616 via a gate 600l, CVD (chemical vapor depo) sition) A light emitting device that was transported to a film formation chamber (D) 617 equipped with a device and whose defective part was repaired. Compounds containing silicon such as silicon nitride and silicon oxide on top and DLC containing carbon on top of these compounds (Diamond Like Carbon) An insulating film in which films are laminated is formed.</p><p> The DLC (Diamond Like Carbon) film is a diamond bond (sp).³Combine) and graph Light join (SP²It is an amorphous film in which (bonds) are mixed. In addition, CVD (chemical vapor depos) In the film formation room equipped with the ition) device, oxygen (O)₂), Hydrogen (H₂), Methane (CH₄), Ammonia (NH₃), Silane (SiH)₄) Can be used. Also, as a CVD device It has parallel plate type electrodes and has a frequency of 13.56 to 60 MHz in the RF power supply. Can be used.</p><p> Further, although not shown in this embodiment, the sputtering method (or the sputtering method) It is also possible to provide a film forming chamber for forming a film by (also referred to as) in the film forming apparatus shown in this embodiment. .. After the organic compound layer is formed on the pixel electrode which is the cathode, the anode is formed. Since film formation by sputtering is effective in forming an element having a structure. Is. In addition, the film formation chamber at the time of film formation should have an atmosphere in which oxygen is added to argon. It is possible to control the oxygen concentration in the film formed in 1 and form a low-resistance film with high transmittance. .. Further, like other film forming chambers, it is desirable that the film forming chamber is separated from the transport chamber by a gate. ..</p><p> Further, when a film forming chamber for sputtering is provided, a mechanism for controlling the temperature of the film forming substrate is provided. May be provided. It is desirable that the film-forming substrate is maintained at 20 to 150 ° C. further As exhaust pumps for the film formation chamber, dry pumps, mechanical booster pumps, and batteries Although it is possible to use a turbo molecular pump (magnetic levitation type) or a cryopump, etc. , In this embodiment, a turbo molecular pump (magnetic levitation type) and a dry pump are desirable.</p><p> Next, 618 is a sealing chamber (also called a sealing chamber or glove box), gate 60. It is connected to the transport chamber (B) 616 via 0k. In the sealing chamber 618, the luminescent element is finally A process is performed to enclose the child in a closed space. This process makes the formed light emitting element oxygen or It is a treatment to protect from moisture, and it is mechanically sealed with a cover material or a thermosetting resin. Alternatively, a means such as encapsulation with an ultraviolet photocurable resin is used.</p><p> Glass, ceramics, plastic or metal can be used as the cover material. It can be done, but if it emits light to the cover material side, it must be translucent. Also, the cover The material and the substrate on which the light emitting element is formed are a sealing material such as a thermosetting resin or an ultraviolet photocurable resin. The resin is cured by heat treatment or ultraviolet light irradiation treatment to create a closed space. To form. It is also effective to provide a moisture absorbing material typified by barium oxide in this closed space. is there.</p><p> In addition, the space between the cover material and the substrate on which the light emitting element is formed is made of thermosetting resin or ultraviolet light hard. It is also possible to fill with a chemical resin. In this case, a thermosetting resin or an ultraviolet photocurable tree It is effective to add a moisture absorbing material typified by barium oxide to the fat.</p><p> In the film forming apparatus shown in FIG. 6, a mechanism for irradiating the inside of the sealing chamber 618 with ultraviolet light (hereinafter referred to as , Ultraviolet light irradiation mechanism) 619 is provided, and it is emitted from this ultraviolet light irradiation mechanism 619. The structure is such that the ultraviolet photocurable resin is cured by the ultraviolet light. Also, the sealing chamber 618 It is also possible to reduce the pressure inside the car by installing an exhaust pump. The above encapsulation process When mechanically operating with a bot, it is possible to prevent oxygen and water from entering by performing under reduced pressure. it can. Specifically, it is desirable that the oxygen and water concentrations be 0.3 ppm or less. .. On the contrary, it is also possible to pressurize the inside of the sealing chamber 618. In this case, high-purity nitrogen Pressurization is applied while purging with raw gas or rare gas to prevent oxygen from entering from the outside air.</p><p> Next, the delivery chamber (pass box) 620 is connected to the sealing chamber 618. In delivery room 620 Is provided with a transport mechanism (C) 621 and receives the substrate in which the light emitting element is completely sealed in the sealing chamber 618. Transport to the transfer room 620. The delivery room 620 should also be decompressed by installing an exhaust pump. Is possible. This delivery chamber 620 is for preventing the sealing chamber 618 from being directly exposed to the outside air. It is a facility, and the board is taken out from here. In addition, we supply materials used in the sealing chamber 618. It is also possible to provide a member supply chamber.</p><p> As described above, by using the film forming apparatus shown in FIG. 6, the defective portion is formed before the light emitting element is sealed. Can be repaired and exposed to the outside air until the light emitting element is completely enclosed in a closed space. Since it is not necessary, it is possible to manufacture a highly reliable light emitting device.</p>

<p> In this embodiment, when a reverse bias voltage is actually applied to the light emitting element having a defective portion, The characteristics observed by the emission microscope will be described.</p><p> The light emitting device used in this example is a compound (IT) that combines indium oxide and tin oxide. Copper phthalocyanine is deposited as a hole injection layer on the anode consisting of O) with a film thickness of 20 nm. Then α-NPD was formed as a hole transport layer with a film thickness of 40 nm by a thin film deposition method. Is done. Then, as a light emitting material that forms a light emitting layer on the hole transport layer, a triplet compound is used. A certain Ir (ppy)₃However, it is formed with a film thickness of 20 nm by co-evaporation with CBP. further , BCP 10nm as an electron injection layer on the light emitting layer, aluminum 140n as a cathode A light emitting element is formed by forming a film having a thickness of m. In addition, in this specification, it should be noted. A triplet compound is an organic compound that can utilize phosphorescence from triplet excitons for light emission. The details will be described in Example 4.</p><p> Voltage when a reverse bias voltage is applied to a light emitting element having the above configuration and having a defective portion. -The current characteristics are shown in Fig. 11. In FIG. 11, the electric power when the reverse bias is applied to the horizontal axis. The pressure (difference between the voltage applied to the anode and the voltage applied to the cathode) is shown, and the vertical axis is the reverse bias applied. Indicates the current value (reverse bias current) that sometimes flows through the light emitting element. Here, the electricity applied to the anode Luminescent element when the pressure value is fixed at + 1V and the voltage applied to the cathode is changed from +1 to + 7V. This is a measurement of the current value flowing through the child. That is, the current value measured here is described herein. It is worth the value of the current flowing through the defective part of the light emitting element.</p><p> Then, the photons that form the light emitted by the current flowing through the defective part The number is detected by an emission microscope. The photons detected by the emission microscope , The number of photons is distinguished by color and displayed. In addition, the defective part identified by the color-coded display Since the position is displayed on the CRT by superimposing it on the image of the light emitting element part taken in advance, the light emitting element The position of the defect portion existing on the top can be accurately specified.</p><p> The reverse bias voltage is applied in the range of 0 to -15V. Reverse valve applied This is because if the voltage of the ear becomes higher than this, the light emitting element may be destroyed. ..</p><p> In the inspection of the defective portion in the present invention, the height of the reverse bias voltage applied to the light emitting element and the height of the reverse bias voltage. Regarding the time of application, the material and lamination of the anode, cathode and organic compound layers of the light emitting element It depends on the composition of the layer to be formed. If the reverse bias voltage is too low, the effect of the present invention can be obtained. On the contrary, if it is too high, the deterioration of the organic compound layer is promoted or the light emitting element itself is destroyed. To.</p><p> Depending on the material and composition of the anode, cathode and organic compound layer of the light emitting device, the practitioner may reverse It is necessary to appropriately set the height of the ear voltage and the application time.</p><p> By irradiating the defective part of the light emitting element displayed on the CRT with a laser to insulate it. The light emitting element was repaired. The power consumption of the light emitting element before and after the repair is measured below. The determined result is shown. The measurement was performed in all white display and all black display, respectively.</p><p><tables num="1"><img file="JP5111649B2_D0001.tif" /></tables></p><p> The result shown above is the shadow of the light emitting element when the drive voltage in the external power supply is 6 to 8V. The power consumption was calculated by measuring the amount of current flowing through the poles. Even in the case of pressure, the drive voltage after repair is 1/5 to 1/10 compared to the drive voltage before repair. It has become. In other words, the light emitting element can be repaired by insulating the defective part by laser irradiation. It turns out that it will be possible.</p>

<p> A defective portion is inspected using the present invention, and if a defective portion is detected, a defect is detected by laser irradiation. In a light emitting device whose part is repaired, phosphorescence from triplet excitons is emitted to the organic compound layer. It is possible to use available organic compounds (also called triplet compounds). phosphorescent A light emitting device using an organic compound that can be used for light emission dramatically improves the external light emission quantum efficiency. Can be made. This makes it possible to reduce the power consumption, life, and weight of the light emitting element. Become Noh.</p><p> Here, we show a report of improving the external emission quantum efficiency by using triplet excitons. (T.Tsutsui, C.Adachi, S.Saito, Photochemical Processes in Organized Molecular S ystems, ed.K.Honda, (Elsevier Sci.Pub., Tokyo, 1991) p.437.)</p><p> The molecular formulas of the organic compounds (coumarin dyes) reported in the above paper are shown below.</p><p><chemistry num="1"><img file="JP5111649B2_D0002.tif" /></chemistry></p><p> (MABaldo, DFO'Brien, Y.You, A.Shoustikov, S.Sibley, METhompson, SRForr est, Nature 395 (1998) p.151.)</p><p> The molecular formulas of the organic compounds (Pt complexes) reported in the above paper are shown below.</p><p><chemistry num="2"><img file="JP5111649B2_D0003.tif" /></chemistry></p><p> (MABaldo, S.Lamansky, PEBurrrows, METhompson, SRForrest, Appl.Phys.Let t.,75 (1999) p.4.) (T.Tsutsui, M.-J.Yang, M.Yahiro, K.Nakamura, T.Watanabe, T.ts uji, Y.Fukuda, T.Wakimoto, S.Mayaguchi, Jpn.Appl.Phys., 38 (12B) (1999) L1502.)</p><p>The molecular formulas of the organic compounds (Ir complexes) reported in the above paper are shown below.</p><p><chemistry num="3"><img file="JP5111649B2_D0004.tif" /></chemistry></p><p> If phosphorescence from triplet excitons can be used as described above, in principle, from singlet excitons. It is possible to realize an external emission quantum efficiency that is 3 to 4 times higher than when using the fluorescence emission of.</p><p> The configuration of this embodiment can be freely combined with any of the configurations of Examples 1 to 3. It is possible to carry out.</p>

<p> In this embodiment, the cross section shown in FIG. 7 shows a light emitting device in which a defective portion has been repaired using the present invention. This will be described with reference to the figures.</p><p> In FIG. 7, the switching TFT721 provided on the substrate 700 is an n-channel type. Formed using TFT.</p><p> In this embodiment, two channel formation regions are formed in the switching TFT 721. Although it has a double gate structure, a single game in which one channel formation region is formed It may be a g-structure or a triple gate structure in which three are formed.</p><p> The drive circuits provided on the board 700 are n-channel TFT723 and p-channel TFT. Has 724. In this embodiment, the TFT of the drive circuit has a single gate structure. However, it may have a double gate structure or a triple gate structure.</p><p> Wiring 701 and 703 are the source wiring of the CMOS circuit, and 702 is the drain wiring. Function. In addition, wiring 704 is the source wiring 708 and the source area of the switching TFT. Functions as a wiring that electrically connects the wiring 705, and the wiring 705 switches with the drain wiring 709. It functions as a wiring that electrically connects to the drain area of the TFT.</p><p> The current control TFT 722 is formed by using a p-channel type TFT. In addition, the real In the example, the current control TFT722 has a single gate structure, but it has a double gate structure. Alternatively, it may have a triple gate structure.</p><p> The wiring 706 is the source wiring (corresponding to the current supply line) of the current control TFT. The 707 is electrically connected to the pixel electrode 710 by being placed on the pixel electrode 710 of the current control TFT. It is an electrode to be connected.</p><p> Reference numeral 710 is a pixel electrode (anode of a light emitting element) made of a transparent conductive film. Transparent conductive film As a compound of indium oxide and tin oxide, a compound of indium oxide and zinc oxide. , Zinc oxide, tin oxide or indium oxide can be used. In addition, the transparent conductivity A film to which gallium is added may be used. Before the pixel electrode 710 is formed with the above wiring It is formed on a flat interlayer insulating film 711. In this embodiment, the flattening film 7 made of resin It is very important to flatten the step by TFT using 11. Yes formed later Since the machine compound layer is very thin, the presence of a step may cause light emission failure. .. Therefore, before forming the pixel electrodes so that the organic compound layer can be formed on a flat surface as much as possible. It is desirable to keep it flat.</p><p> After forming the wirings 701 to 707, the bank 712 is formed as shown in FIG. Bank 71 2 is formed by patterning an insulating film or organic resin film containing 100 to 400 nm silicon. Just do it.</p><p> Since the bank 712 is an insulating film, care must be taken to prevent electrostatic breakdown of the element during film formation. It is important. In this embodiment, carbon particles and metal particles are placed in the insulating film that is the material of bank 712. Add to reduce resistivity and suppress the generation of static electricity. At this time, the resistivity is 1 × 10.⁶~1×1 0¹²Ωm (preferably 1x10)⁸~1×10¹⁰Carbon particles and metal particles so as to be Ωm) The amount of the child added may be adjusted.</p><p> An organic compound layer 713 is formed on the pixel electrode 710. In addition, only one pixel is shown in Fig. 7. Although not shown, in this embodiment, organication corresponding to each color of R (red), G (green), and B (blue) The compound layer is made separately. Further, in this example, a low molecular weight organic compound is formed by a vapor deposition method. ing.</p><p> Specifically, a 20 nm-thick copper phthalocyanine (CuPc) film as the hole injection layer 713a. 70 nm thick Tris-8-Kinolinola toamini as a light emitting layer 713b on it Umm complex (Alq₃) It has a laminated structure with a film. Alq₃Quinacridone, perylene Alternatively, the emission color can be controlled by adding a fluorescent dye such as DCM1.</p><p> However, the above example is an example of an organic compound that can be used as an organic compound layer. There is no need to limit it to this. Light emitting layer, hole injection layer, hole transport layer, electron transport layer Is an organic compound layer (emission and carrier transfer for that purpose) that can be freely combined with electron injection layers. A layer for doing this) may be formed. For example, in this example, the low molecular weight organic compound is organic. Although an example of using it as a compound layer is shown, a polymer-based organic compound may be used. These organic Known materials can be used as the organic compound.</p><p> Next, a cathode 714 made of a conductive film is provided on the organic compound layer 713. This Example In the case of, an alloy film of aluminum and lithium is used as the conductive film. Of course, known MgA A g film (alloy film of magnesium and silver) may be used. As a cathode material, Group 1 of the periodic table Alternatively, a conductive film composed of elements belonging to Group 2 or a conductive film to which those elements are added is used. Just do it.</p><p> The light emitting element 719 is completed when the cathode 714 is formed. In addition, the departure mentioned here The optical element 719 is formed of a pixel electrode (anode) 710, an organic compound layer 713, and a cathode 714. Refers to a capacitor that has been used.</p><p> It is effective to provide the passivation film 716 so as to completely cover the light emitting element 719. Is. The passivation film 716 includes a carbon film, a silicon nitride film, or silicon nitride oxide. It is composed of an insulating film including a film, and the insulating film is used as a single layer or a combination of layers.</p><p> At this time, it is preferable to use a film having good coverage as a passivation film, and carbon It is effective to use a film, especially a DLC (diamond-like carbon) film. DLC membrane Can be formed in the temperature range of 100 ° C or less from room temperature, so the organic compound layer with low heat resistance 7 A film can be easily formed above 13. Also, the DLC membrane is a blockin against oxygen. It has a high effect and can suppress the oxidation of the organic compound layer 713. Therefore, this It is possible to prevent the problem that the organic compound layer 713 is oxidized during the subsequent sealing step.</p><p> Further, a sealing material 717 is provided on the passivation film 716, and a cover material 718 is attached. Let me know. An ultraviolet curable resin may be used as the sealing material 717, which has a hygroscopic effect inside. It is effective to provide a substance or a substance having an antioxidant effect. Also, in this example The cover material 718 is a glass substrate, quartz substrate, or plastic substrate (plastic film). A carbon film (preferably a diamond-like carbon film) formed on both sides of (including) Use.</p><p> In this way, a light emitting device having a structure as shown in FIG. 7 is completed. In addition, bank 712 was formed. After that, the process until the passivation film 716 is formed is a multi-chamber method (or a). It is effective to perform continuous processing without releasing to the atmosphere using a film forming device (on-line method). .. In addition, the process of further developing and pasting the cover material 718 is continuous without releasing it to the atmosphere. It is also possible to process it in a targeted manner.</p><p> Further, the feature of the TFT in this embodiment is that the gate electrode is formed of a two-layer conductive film. And in the low-concentration impurity region provided between the channel formation region and the drain region. Therefore, there is almost no difference in concentration, there is a gentle concentration gradient, and the region that overlaps with the lower gate electrode ( It has a GOLD region) and a region that does not overlap with the gate electrode (LDD region). .. In addition, the peripheral portion of the gate insulating film, that is, the region that does not overlap with the gate electrode and the high-concentration impurity region. The area above the area is tapered.</p><p> In the light emitting device of this embodiment, the hole injection layer 713a and the light emitting layer 713b have defective portions. In this defective part, the pixel electrode (anode) 710 and the cathode 714 are short-circuited. Has 715. By the present invention, the position of the defective portion 715 is specified and laser irradiation is performed. The defective portion 715 can be changed to the insulator 720. Insulator 720 for defective part 715 By changing to, the leakage current in the defective portion 715 can be prevented. Therefore, the defective part The light emitting element that has been extinguished by the leak current at 715 can be made to emit light again.</p><p> Further, in this embodiment, only the configuration of the pixel portion and the drive circuit is shown, but in the manufacturing process of this embodiment, According to other theories such as signal division circuits, D / A converters, operational amplifiers, and γ correction circuits. It is possible to form a physical circuit on the same insulator, and even form a memory and a microprocessor. Can be done.</p><p> The light emitting device having the structure shown in this embodiment can be freely assembled with the configurations of Examples 1 to 4. It is possible to carry out together.</p>

<p> In this embodiment, the light emitting device having a structure different from that of the light emitting device shown in Example 5 is used for the inspection of the present invention. The case of repairing a defective part using the inspection and repair method will be explained using the cross-sectional view shown in FIG. To do.</p><p> In FIG. 8, 811 is a substrate, and 812 is an insulating film (hereinafter referred to as a base film) as a base. To. The substrate 811 is a translucent substrate, typically a glass substrate, a quartz substrate, or a glass ceramic. A glass substrate or a crystallized glass substrate can be used. However, the highest point in the manufacturing process It must be able to withstand the temperature.</p><p> Further, when the substrate film 812 uses a substrate containing movable ions or a substrate having conductivity. It is effective, but it does not have to be provided on the quartz substrate. As the base film 812, silicon (siri) An insulating film containing a con) may be used. In this specification, the term "insulating film containing silicon" is used. , Specifically, silicon oxide film, silicon nitride film or silicon nitride film (SiOxNy: x, y is (Represented by an arbitrary integer), etc. Silicon containing oxygen or nitrogen in a predetermined ratio Refers to the marginal membrane.</p><p> 8201 is a switching TFT and 8202 is a current control TFT. It is composed of channel type TFT and p-channel type TFT. The light generated from the light emitting element emits light When the direction is the lower surface of the substrate (the surface on which the TFT and the organic compound layer are not provided), the above configuration Is preferable. However, the present invention is not limited to this configuration. TFT for switching And the current control TFT can be either an n-channel TFT or a p-channel TFT. I don't know.</p><p> The switching TFT8201 has a source area of 813, a drain area of 814, and an LDD area. Activities including regions 815a-815d, separation regions 816 and channel formation regions 817a, 817b The layer, the gate insulating film 818, the gate electrodes 819a and 819b, and the first interlayer insulating film 820. , The source signal line 821 and the drain wiring 822. The gate insulating film 81 The 8 or 1st interlayer insulating film 820 may be common to all TFTs on the substrate, or may be a circuit or element. It may be different depending on.</p><p> In the switching TFT 8201 shown in FIG. 8, the gate electrodes 817a and 817b are electric. It has a so-called double gate structure. Of course, double gate structure Not only so-called multi-gate structure such as triple gate structure (two connected in series) It may be a structure including an active layer having the above channel forming region).</p><p> The multi-gate structure is extremely effective in reducing off-current, and is a switching TFT. If the off-current of is sufficiently low, it will be connected to the gate electrode of TFT8202 for current control. The minimum capacitance required by the capacitor can be suppressed. That is, of the capacitor Since the area can be reduced, the multi-gate structure is effective for the light emitting element. It is also effective in expanding the area.</p><p> Further, in the switching TFT8201, the LDD regions 815a to 815d are It is provided so as not to overlap with the gate electrodes 819a and 819b via the gate insulating film 818. This Such a structure is very effective in reducing the off-current. Also, LDD area 815a If the length (width) of ~ 815d is 0.5 to 3.5 μm, typically 2.0 to 2.5 μm good.</p><p> An offset region (same as the channel formation region) between the channel formation region and the LDD region. It consists of a semiconductor layer of one composition, and providing a region where the gate voltage is not applied) reduces the off-current. It is even more preferable in terms of shaving. Also, in the case of a multi-gate structure having two or more gate electrodes , Separation region 816 provided between channel formation regions (same as source region or drain region) The region where the same impurity element is added at one concentration) is effective in reducing the off-current.</p><p> Next, the current control TFT8202 has a source area 826, a drain area 827, and a cha. The active layer including the flannel forming region 829, the gate insulating film 818, the gate electrode 830, and the first It is formed with an interlayer insulating film 820, a source signal line 831 and a drain wiring 832. .. In this embodiment, the current control TFT8202 is a p-channel type TFT.</p><p> The drain area 814 of the switching TFT8201 is the current control TFT820. It is connected to Gate 830 of 2. Although not shown, specifically, a TFT for current control The gate electrode 830 of 8202 is the drain region 814 of the switching TFT 8201 and the output. It is electrically connected via rain wiring (also called connection wiring) 822. In addition, game Although the electrode 830 has a single gate structure, it may have a multi-gate structure. In addition, the source signal line 831 of the current control TFT8202 is connected to the current supply line (not shown). Will be done.</p><p> The current control TFT8202 is an element for controlling the amount of current injected into the light emitting element. , A relatively large amount of current flows. Therefore, the channel width (W) is the same as that of the switching TFT. It is preferable to design it larger than the channel width. Also, it is excessive for the current control TFT8202. It is preferable to design the channel length (L) to be long so that a large current does not flow. Desirable Should be 0.5 to 2 μA (preferably 1 to 1.5 μA) per pixel.</p><p> In addition, the film thickness of the active layer (particularly the channel formation region) of the current control TFT8202 is increased. (Preferably 50-100 nm, more preferably 60-80 nm) by Deterioration of T may be suppressed. On the contrary, in the case of TFT8201 for switching, the off current is small. From the viewpoint of making it thicker, the film thickness of the active layer (particularly the channel formation region) is reduced (preferably). It is also effective to use 20 to 50 nm, more preferably 25 to 40 nm).</p><p> The structure of the TFT provided in the pixel has been described above, but at the same time, the drive circuit Is also formed. Figure 8 shows a CMOS circuit, which is the basic unit that forms the drive circuit. To.</p><p> In Fig. 8, hot carrier injection is reduced while keeping the operating speed as low as possible. A TFT having such a structure is used as an n-channel type TFT8204 in a CMOS circuit. It should be noted that The drive circuit referred to here refers to a source signal side drive circuit and a gate signal side drive circuit. Of course, forming other logic circuits (level shifter, A / D converter, signal division circuit, etc.) It is also possible.</p><p> The active layer of the n-channel TFT8204 in the CMOS circuit has a source region of 835 and a drain. Includes region 836, LDD region 837 and channel formation region 838, where LDD region 837 It overlaps with the gate electrode 839 via the gate insulating film 818.</p><p> Forming the LDD region 837 only on the drain region 836 side slows down the operating speed. It is a consideration for not having it. Also, this n-channel type TFT8204 is not so concerned about the off-current value. It is not necessary to set it to, and it is better to emphasize the operating speed rather than that. Therefore, LDD region 837 Is completely overlapped with the gate electrode, and it is desirable to reduce the resistance component as much as possible. That is, It is better to eliminate the so-called offset.</p><p> In addition, the p-channel type TFT8205 of the CMOS circuit deteriorates due to hot carrier injection. However, it is not necessary to provide an LDD area in particular. Therefore, the active layer is the source area Includes region 840, drain region 841 and channel formation region 842, above which the gate is closed A marginal membrane 818 and a gate electrode 843 are provided. Of course, the same as the n-channel TFT8204 It is also possible to set up an LDD area in Japan and take measures against hot carriers.</p><p> Note that 861 to 865 are channel formation regions 842, 838, 817a, 817b, 829. It is a mask for forming.</p><p> In addition, the n-channel type TFT8204 and the p-channel type TFT8205 are the sources, respectively. It has source signal lines 844 and 845 on the region with a first interlayer insulating film 820 in between. .. In addition, n-channel TFT8204 and p-channel TFT with drain wiring 846 The drain regions with the 8205 are electrically connected to each other.</p><p> Next, reference numeral 847 is a first passivation film having a film thickness of 10 nm to 1 μm (preferably). 200 ~ 500nm). As a material, an insulating film containing silicon (particularly silicon nitride oxide) A bare film or a silicon nitride film is preferable). This passivation membrane 847 Has a role metal that protects the formed TFT from alkali metals and moisture. Finally TF The organic compound layer provided above the T (especially the TFT for current control) has an arc of sodium or the like. Contains metal. That is, the first passivation film 847 is formed of these alkali metals (that is, It also acts as a protective layer that prevents (moving ions) from entering the TFT side.</p><p> In addition, 848 is the second interlayer insulating film, which flattens the steps created by TFT. It has a function as a chemical film. As the second interlayer insulating film 848, an organic resin film is preferable. It is preferable to use reimide, polyamide, acrylic, BCB (benzocyclobutene) or the like. This These organic resin films have the advantages of easily forming a good flat surface and having a low relative permittivity. Since the organic compound layer is very sensitive to unevenness, the step due to TFT is the second interlayer insulating film 848. It is desirable to absorb most of it. In addition, the gate signal line, data signal line, and light emitting element In order to reduce the parasitic capacitance formed between the cathode and the cathode, a thick material with a low relative permittivity is provided. Is desirable. Therefore, the film thickness is preferably 0.5 to 5 μm (preferably 1.5 to 2.5 μm). I'm sorry.</p><p> Further, 849 is a pixel electrode (anode of a light emitting element) made of a transparent conductive film, and is a second interlayer insulating film. Formed after making contact holes in 848 and 1st passivation membrane 847 To be connected to the drain wiring 832 of the current control TFT 8202 at the opened hole Is formed in. As shown in FIG. 8, the pixel electrode 849 and the drain region 827 are directly connected. If this is not done, the alkali metal of the organic compound layer invades the active layer via the pixel electrode. It can be prevented from entering.</p><p> A third layer made of a silicon oxide film, a silicon nitride film, or an organic resin film is placed on the pixel electrode 849. The insulating film 850 is provided with a thickness of 0.3 to 1 μm. This third interlayer insulating film 850 is a pixel electric An opening is provided on the pole 849 by etching, and the edge of the opening is tapered. Etch so as to. The taper angle is 10 to 60 ° (preferably 30 to 50 °). Then it is good.</p><p> An organic compound layer 851 is provided on the third interlayer insulating film 850. Organic compound layer 851 Is used in a single-layer or laminated structure, but the luminous efficiency is better when used in a laminated structure. In general The hole injection layer / hole transport layer / light emitting layer / electron transport layer are formed on the pixel electrode in this order. Sending layer / light emitting layer / electron transporting layer, or hole injection layer / hole transporting layer / light emitting layer / electron transporting layer / electron A structure such as an injection layer may be used. Public in the present invention Any known structure may be used, and the organic compound layer is doped with a fluorescent dye or the like. You may.</p><p> The structure shown in Fig. 8 is an example when a method of forming three types of light emitting elements corresponding to RGB is used. To. Although only one pixel is shown in FIG. 8, pixels having the same structure are red, green, or blue. It is formed corresponding to each color, whereby color display can be performed. The present invention It can be carried out regardless of the light emission method.</p><p> A cathode 852 of a light emitting device is provided on the organic compound layer 851. As a cathode 852 , Magnesium (Mg), lithium (Li) or calcium (Ca) with small work function ) Is used. Preferably MgAg (Mix Mg and Ag at Mg: Ag = 10: 1) An electrode made of (material) may be used. Besides, MgAgAl electrode, LiAl electrode, and Examples include LiFAl electrodes.</p><p> The light emitting device is composed of the pixel electrode (anode) 849, the organic compound layer 851, and the cathode 852. 8206 is formed.</p><p> The laminate consisting of the organic compound layer 851 and the cathode 852 needs to be formed individually for each pixel. However, since the organic compound layer 851 is extremely sensitive to moisture, ordinary photolithography technology is used. I can't be. Therefore, using a physical mask material such as a metal mask, the vacuum deposition method, It is preferably formed selectively by a vapor phase method such as a sputtering method or a plasma CVD method.</p><p> As a method for selectively forming the organic compound layer, an inkjet method or a screen marking method is used. It is also possible to use a printing method or a spin coating method, but these are currently continuous cathodes. It can be said that the above method is preferable because it cannot be formed.</p><p> In addition, 853 is a protective electrode, which protects the cathode 852 from external moisture, etc., and at the same time, each It is an electrode for connecting the cathode 852 of the pixel. As the protective electrode 853, aluminum It is preferable to use a low resistance material containing (Al), copper (Cu) or silver (Ag). The protective electrode 853 can also be expected to have a heat dissipation effect that alleviates heat generation in the organic compound layer.</p><p> Further, 854 is a second passivation film, and the film thickness is 10 nm to 1 μm (preferably). 200 ~ 500nm). The purpose of providing the second passivation film 854 is The main purpose is to protect the machine compound layer 851 from moisture, but it is also effective to have a heat dissipation effect. Is. However, as described above, the organic compound layer is sensitive to heat, so the temperature is as low as possible (preferably a chamber). It is desirable to form a film in the temperature range (temperature range from temperature to 120 ° C). Therefore, the plasma CVD method, Sputtering method, vacuum deposition method, ion plating method or solution coating method (spin coating) Method) is a desirable film formation method.</p><p> In the light emitting device of this embodiment, the organic compound layer 851 has a defective portion, and in this defective portion. It has a defective portion 866 in which the pixel electrode (anode) 849 and the cathode 852 are short-circuited. The position of the defective portion 866 is specified using the present invention, and the defective portion 866 is insulated by laser irradiation. By changing the defective part 866 to the insulator 867, it becomes the defective part 866. Leakage current can be prevented. Therefore, it is erased by the leak current in the defective part 866. The light emitting element that was shining can be made to emit light again. Furthermore, the defective part 866 is insulated. As a result, deterioration of the organic compound layer 851 around the defective portion can be prevented.</p><p> The light emitting device having the structure shown in this embodiment can be freely combined with the configurations of Examples 1 to 4. It is possible to carry out in combination.</p>

<p> Since the light emitting device using the light emitting element is a self-luminous type, it is in a bright place compared to the liquid crystal display device. Has excellent visibility and a wide viewing angle. Therefore, various electric appliances are completed by using the light emitting device of the present invention. Can be made.</p><p> As an electric appliance using a light emitting device for inspecting and repairing a defective portion of a light emitting element according to the present invention. , Video camera, digital camera, goggle type display (head mounted display) B), navigation system, sound reproduction device (car audio, audio component, etc.) , Notebook personal computers, game machines, personal digital assistants (mobile computers) , Mobile phones, portable game machines, electronic books, etc.), image playback devices equipped with recording media (specifically It is possible to play a recording medium such as a digital video disc (DVD) and display the image. A device equipped with a display device) and the like. In particular, there are many opportunities to see the screen from an oblique direction. Since the wide viewing angle is important for the band information terminal, a light emitting device having a light emitting element should be used. Is desirable. A specific example of these electric appliances is shown in FIG.</p><p> FIG. 9A shows a display device, which includes a housing 2001, a support base 2002, a display unit 2003, and a speed. -Includes car section 2004, video input terminal 2005, etc. In the present invention, defects in the light emitting element Use the light emitting device manufactured by inspecting and repairing the part for the display part 2003. Is made by. A light emitting device having a light emitting element is a self-luminous type, so a backlight is required. It is possible to make the display unit thinner than the liquid crystal display device. The display device is a personal computer. Includes all information display devices for display, TV broadcast reception, advertisement display, etc.</p><p> Figure 9 (B) shows a digital still camera, which is the main body 2101, display unit 2102, and image receiving unit 2. Includes 103, operation keys 2104, external connection port 2105, shutter 2106, etc. Book In the present invention, a light emitting device manufactured by inspecting and repairing a defective portion of a light emitting element is used. It is manufactured by using it for the display unit 2102 of.</p><p> Figure 9 (C) shows a notebook personal computer with a main body 2201, housing 2202, and Display 2203, keyboard 2204, external connection port 2205, pointing mouse Including 2206 etc. In the present invention, by inspecting and repairing a defective portion of the light emitting element. It is manufactured by using the manufactured light emitting device for the display unit 2203.</p><p> Figure 9 (D) shows a mobile computer with a main unit 2301, a display unit 2302, and a switch. Includes 2303, operation keys 2304, infrared port 2305, etc. In the present invention, luminescent elements The light emitting device manufactured by inspecting and repairing the defective part of the child is used for the display unit 2302. It is produced by.</p><p> Figure 9 (E) shows a portable image playback device (specifically, a DVD playback device) equipped with a recording medium. Yes, main unit 2401, housing 2402, display unit A2403, display unit B2404, recording medium ( DVD, etc.) Includes reading section 2405, operation key 2406, speaker section 2407, etc. table Display A2403 mainly displays image information, and display B2404 mainly displays text information. As shown, in the present invention, it was produced by inspecting and repairing a defective portion of a light emitting element. It can be manufactured by using the light emitting device for these display units A, B2403, and 2404. Wear. The image reproduction device provided with the recording medium also includes a home-use game device and the like.</p><p> Figure 9 (F) shows a goggle-type display (head-mounted display), which is the main body 2. Includes 501, display 2502, and arm 2503. In the present invention, a defective portion of the light emitting element By using the light emitting device manufactured by inspecting and repairing the display unit 2502 Can be made.</p><p> Figure 9 (G) shows a video camera, which is the main body 2601, the display unit 2602, the housing 2603, and the outside. Connection port 2604, remote control receiver 2605, image receiver 2606, battery 2607 , Voice input unit 2608, operation key 2609, eyepiece unit 2610, etc. In the present invention The light emitting device manufactured by inspecting and repairing the defective part of the light emitting element is displayed on the display unit 2602. It can be produced by using it.</p><p> Here, Fig. 9 (H) is a mobile phone, which includes the main body 2701, the housing 2702, and the display unit 2703. Audio input unit 2704, audio output unit 2705, operation key 2706, external connection port 2707 , Includes antenna 2708, etc. In the present invention, the defective portion of the light emitting element is inspected and repaired. It can be manufactured by using the light emitting device thus manufactured for the display unit 2703. .. The display unit 2703 displays white characters on a black background to consume the power of the mobile phone. Can be suppressed.</p><p> If the emission brightness of the organic compound increases in the future, the light containing the output image information will be lent. It is also possible to magnify and project with a projector and use it for front type or rear type projectors. To.</p><p> In addition, the above electric appliances are used for electronic communication such as the Internet and CATV (cable TV). More often the information delivered through the line is displayed, especially the opportunity to display video information I'm doing it. Since the response speed of organic compounds is very high, a light emitting device is preferable for moving image display. ..</p><p> In addition, since the light emitting part of the light emitting device consumes power, the light emitting part is reduced as much as possible. It is desirable to display the information as such. Therefore, mobile information terminals, especially mobile phones and sound reproduction When a light emitting device is used for a display unit that mainly uses character information such as a device, the non-light emitting portion is used as the background. It is desirable to drive the character information so as to be formed by the light emitting portion.</p><p> As described above, the applicable range of the light emitting device for inspecting and repairing the defective portion of the light emitting element according to the present invention. Is extremely wide and can be used for electrical appliances in all fields. In addition, the electric power of this embodiment By using the light emitting device produced by carrying out Examples 1 to 6 as the air appliance. Can be completed.</p>