Linear drive system for use in a plasma processing system
30 claims: 8 independent, 22 dependent
- 1基板を処理するためのプラズマ処理システムであって、 処理チャンバ内にプラズマを閉じ込めるための部品である閉じ込めリングと、 前記閉じ込めリングを、前記基板の前記処理中に、直線方向に移動させるための歯車駆動アセンブリと、を備え、 前記歯車駆動アセンブリは、 第1の歯車と、 複数の第2の歯車と、 複数の位置決め部材と、を備え、 前記位置決め部材の各々は、別個の第2の歯車に関連し、 前記第1の歯車は、前記複数の第2の歯車を駆動するように構成されており、 前記第2の歯車の各々は、関連する前記位置決め部材を前記直線方向に移動させるように構成されており、 前記位置決め部材の各々は、前記閉じ込めリングに取り付けられており、この結果、前記位置決め部材が前記直線方向に移動するときに、前記閉じ込めリングは移動するプラズマ処理システム。
- 2請求項1記載のプラズマ処理システムであって、 前記歯車駆動アセンブリは、前記基板の上方の圧力を制御するために、前記閉じ込めリングを移動させるように構成されているプラズマ処理システム。
- 3請求項1記載のプラズマ処理システムであって、さらに、 処理チャンバ内に電場を発生させるための電極を備えるプラズマ処理システム。
- 4請求項3記載のプラズマ処理システムであって、 前記電極は、前記処理チャンバ内に設けられているプラズマ処理システム。
- 5請求項3記載のプラズマ処理システムであって、前記歯車駆動アセンブリは、さらに、前記電極を前記直線方向に移動させるように構成されており、 前記歯車駆動アセンブリは、前記直線方向に前記閉じ込めリングと前記電極とを独立して移動させるよう構成されているプラズマ処理システム。
- 6請求項1または請求項2記載のプラズマ処理システムであって、 前記閉じ込めリングの位置は、前記基板が処理のために前記処理チャンバ内に配置されたときに、前記閉じ込めリングと前記基板との間に、間隙を形成するように構成されており、 前記間隙の寸法は、そこを通るガスの流れを制御するために、処理中に、前記閉じ込めリングを前記直線方向に移動させることによって変更されるプラズマ処理システム。
- 7請求項1記載のプラズマ処理システムであって、 前記プラズマ処理システムは、処理チャンバを備え、 前記第1の歯車と前記第2の歯車の各々とは、前記処理チャンバによって回転可能に支持されており、 前記複数の第2の歯車は、前記第1の歯車に動作可能に係合しており、 前記複数の第2の歯車は、それぞれ、軸と、前記軸に設けられた第1のねじ切り面と、を有し、 前記関連する位置決め部材の各々は、直線方向の移動を提供するために、前記第2の歯車の前記第1のねじ切り面に移動可能に結合された第2のねじ切り面を有するプラズマ処理システム。
- 8請求項7記載のプラズマ処理システムであって、 前記歯車駆動アセンブリは、さらに、 前記第1の歯車を回転させるための駆動装置を含み、 前記駆動装置は、 モータと、 前記モータに回転可能に結合された駆動歯車と、備え、 前記駆動歯車は、前記第1の歯車に動作可能に係合しており、 前記モータが前記駆動歯車を回転させると、前記駆動歯車は前記第1の歯車を駆動して回転させ、前記第1の歯車は前記複数の第2の歯車を駆動して回転させ、前記回転する第2の歯車は前記位置決め部材を前記直線方向に移動させるプラズマ処理システム。
- 9請求項3記載のプラズマ処理システムであって、 前記位置決め部材は第1の位置決め部材であり、 前記歯車駆動アセンブリは、さらに、 複数の第3の歯車と、 複数の第2の位置決め部材と、を備え、 前記第1の歯車は、前記複数の第3の歯車を駆動するように構成されており、 前記複数の第3の歯車は、前記複数の第2の位置決め部材を前記直線方向に移動させるように構成されており、 前記複数の第2の位置決め部材は、前記電極に取り付けられており、この結果、前記複数の第2の位置決め部材が前記複数の第3の歯車によって移動するときに、前記電極は前記直線方向に移動するプラズマ処理システム。
- 10請求項9記載のプラズマ処理システムであって、 前記歯車駆動アセンブリは、さらに、 前記複数の第2の歯車または前記複数の第3の歯車を前記第1の歯車に対して係合させたり解放させたりするためのトランスファ歯車を備え、 前記複数の第2の歯車の内の特定の歯車が前記トランスファ歯車に係合する場合には、前記関連する第1の位置決め部材が前記直線方向に移動し、前記複数の第3の歯車の内の特定の歯車が前記トランスファ歯車に係合する場合には、前記第2の位置決め部材が前記直線方向に移動するプラズマ処理システム。
- 11請求項10記載のプラズマ処理システムであって、 前記第1の歯車と前記複数の第2の歯車と前記複数の第3の歯車と前記トランスファ歯車とは、前記処理チャンバによって回転可能に支持されており、 前記トランスファ歯車は、前記第1の歯車に動作可能に係合しており、 前記複数の第2の歯車の各々は、第1のねじ切り部を有し、 前記第1の位置決め部材の各々は、直線方向の移動を提供するために、前記複数の第2の歯車の内の関連する歯車の前記第1のねじ切り部に移動可能に結合された第2のねじ切り部を有し、 前記複数の第3の歯車の各々は、第3のねじ切り部を有し、 前記第2の位置決め部材の各々は、直線方向の移動を提供するために、前記複数の第2の歯車の内の関連する歯車の前記第3のねじ切り部に移動可能に結合された第4のねじ切り部を有するプラズマ処理システム。
- 12基板の プラズマ 処理に関連する 閉じ込めリング を、前記基板の処理中に移動させるための直線駆動アセンブリであって、 第1の歯車と、 前記第1の歯車に動作可能に係合して移動可能に接触する複数の第2の歯車と、 それぞれが第1の部分と第2の部分とを有する複数の位置決め部材であって、前記第1の部分は、前記複数の第2の歯車の内の1つの歯車に対して直線方向に移動可能に結合されており、前記第2の部分は、前記物体に取り付けられており、前記複数の第2の歯車と前記複数の位置決め部材とは、前記第1の歯車の周辺に対称的に間隔を空けた状態で設けられている、前記位置決め部材と、を備え 、 前記位置決め部材の各々は、前記閉じ込めリングに取り付けられてい る直線駆動アセンブリ。
- 13請求項12に記載された直線駆動アセンブリであって、前記位置決め部材の各々は、前記複数の第2の歯車の内の関連する歯車にねじ込み可能に結合されている、直線駆動アセンブリ。
- 14請求項13記載の直線駆動アセンブリであって、 前記位置決め部材の各々は、一定のピッチを有する雄ねじ切り面を含み、 前記第2の歯車の各々は、前記雄ねじ切り面の前記ピッチと同じピッチを有する雌ねじ切り面を含み、 前記位置決め部材の各々の前記雄ねじ切り面は、前記第2の歯車の内の関連する歯車の前記雌ねじ切り面内に、回転可能に設けられている、直線駆動アセンブリ。
- 15請求項12記載の直線駆動アセンブリであって、前記位置決め部材の各々の前記第1の部分は、直線形の歯車である、直線駆動アセンブリ。
- 16請求項12ないし請求項15のいずれか記載の直線駆動アセンブリであって、さらに、 前記第1の歯車を駆動するためのモータを備える、直線駆動アセンブリ。
- 17請求項12記載の直線駆動アセンブリであって、 該直線駆動アセンブリは、基板を処理するためのプラズマ処理システムにおいて用いられる、直線駆動アセンブリ。
- 18請求項1記載のプラズマ処理システムであって、 前記閉じ込めリングは、前記基板の上方の領域に前記プラズマを閉じ込めるプラズマ処理システム。
- 19請求項1ないし請求項11のいずれか記載のプラズマ処理システムであって、 前記基板の表面上の所定の領域から材料を選択的に除去するために、前記処理においてエッチング動作が用いられる、または、前記基板の表面上の所定の領域に材料を選択的に蒸着するために、前記処理において蒸着動作が用いられるプラズマ処理システム。
- 20請求項1記載のプラズマ処理システムであって、 前記歯車駆動アセンブリは、前記処理チャンバの第1の軸に沿って前記閉じ込めリングを移動させるように構成されており、 前記閉じ込めリングは、前記第1の軸に直交する平面内に配置されるプラズマ処理システム。
- 21請求項2記載のプラズマ処理システムであって、 前記閉じ込めリングは、処理中に前記基板の表面における圧力を上げるために、第1の直線方向に移動され、 前記閉じ込めリングは、処理中に前記基板の表面における圧力を下げるために、前記第1の直線方向と逆向きの第2の直線方向に移動されるプラズマ処理システム。
- 22請求項1記載のプラズマ処理システムであって、 前記第1の歯車は、前記処理チャンバに対して回転可能であり、 前記第2の歯車は、前記処理チャンバに対して移動可能であり、前記第1の歯車に移動可能に接触しており、 前記位置決め部材である位置決めシャフトは、前記第2の歯車に対して移動可能であり、前記第2の歯車に移動可能に接触しているプラズマ処理システム。
- 23請求項22記載のプラズマ処理システムであって、 前記複数の第2の歯車と前記複数の位置決め部材とは、前記第1の歯車の周辺に対称的に間隔を空けた状態で設けられており、 前記第1の歯車が回転されて、前記複数の第2の歯車が前記第1の歯車に移動可能に接触したままである時に、前記複数の位置決めシャフトは、前記直線方向と平行に組織的に移動するプラズマ処理システム。
- 24請求項12記載の直線駆動アセンブリであって、 前記位置決め部材の各々は、前記複数の第2の歯車の内の関連する歯車に対して移動可能である、直線駆動アセンブリ。
- 25処理チャンバ内での処理中に、該処理チャンバの第1の軸に沿って閉じ込めリングを移動させるように構成された歯車構成であって、前記閉じ込めリングは、前記第1の軸に直交する平面内に配置されており、前記歯車構成は、 前記処理チャンバに対して回転可能である第1の歯車と、 前記処理チャンバに対して回転可能であり、前記第1の歯車に移動可能に接触する複数の第2の歯車と、 前記第1の軸と平行に配置された複数の位置決めシャフトであって、前記複数の位置決めシャフトの各々は、前記複数の第2の歯車の内の1つと前記閉じ込めリングとに結合されている、複数の位置決めシャフトと、を備え、 前記第1の歯車が回転されて、前記複数の第2の歯車が前記第1の歯車に移動可能に接触したままである時に、前記複数の位置決めシャフトは、前記第1の軸と平行に組織的に移動する、歯車構成。
- 26基板を処理するためのプラズマ処理システムであって、 前記処理のために内部でプラズマが発生および維持される処理チャンバと、 前記処理チャンバ内で前記プラズマに影響を与えるための処理部品 である閉じ込めリング と、 前記プラズマによる前記基板の前記処理中に前記 閉じ込めリング を直線方向に移動させるための歯車駆動アセンブリと、を備え、 前記歯車駆動アセンブリは、 第1の歯車と、 複数の第2の歯車と、 複数の位置決め部材と、を備え、 前記位置決め部材の各々は、別個の第2の歯車に関連し、 前記第1の歯車は、前記複数の第2の歯車を駆動するように構成されており、 前記第2の歯車の各々は、関連する前記位置決め部材を前記直線方向に移動させるように構成されており、 前記位置決め部材の各々は、前記 閉じ込めリング に取り付けられており、この結果、前記位置決め部材が前記直線方向に移動するときに、前記 閉じ込めリング は移動するプラズマ処理システム。
- 27プラズマ処理方法であって、 閉じ込めリングでプラズマを閉じ込める工程と、 前記プラズマによって基板を処理する工程と、 前記処理に影響を与えるために、前記処理中に、歯車アセンブリによって前記閉じ込めリングを直線方向に移動させる工程と を備える方法。
- 28プラズマ処理チャンバ内で閉じ込めリン グを 移動させるための方法であって、 第1の歯車を回転させる工程と、 前記第1の歯車が第2の歯車に動作可能に係合した時に、前記回転する第1の歯車によって前記第2の歯車を回転させる工程と、 前記回転する第2の歯車によって直線状の経路に沿ってシャフトを移動させる工程であって、前記シャフトは、前記第1の歯車が時計回りに回転される時には第1の方向に移動し、前記第1の歯車が反時計回りに回転される時には第2の方向に移動する、工程と、 前記移動するシャフトにより前記直線状の経路に沿って前記閉じ込めリングを上下に移動させる工程と を備える方法。
- 29基板を処理するためのプラズマ処理システムであって、 プラズマを内部で発生し維持する処理チャンバと、 処理チャンバ内のプラズマに影響を与える処理部品 としての閉じ込めリング と、 前記 閉じ込めリング を、前記プラズマによる前記基板の処理中に、直線方向に移動させる歯車駆動アセンブリと を備えるプラズマ処理システム。
- 30請求項29 記載のプラズマ処理システムであって、 前記歯車駆動アセンブリは、 第1の歯車と、 第2の歯車と、 位置決め部材と、を備え、 前記第1の歯車は、前記第2の歯車を駆動するように構成されており、 前記第2の歯車は、前記位置決め部材を前記直線方向に移動させるように構成されており、 前記位置決め部材は、前記 閉じ込めリング に取り付けられており、この結果、前記 閉じ込めリング が前記直線方向に移動するよう前記位置決め部材が移動する プラズマ処理システム。
Independent claims30
1 paragraph, as filed
[0001] Background of the Invention The present invention relates to devices and methods for processing substrates such as semiconductor substrates used in the manufacture of ICs or panels used in flat panel displays (eg, glass, plastic, etc.). More specifically, the present invention relates to improved methods and devices for moving components related to substrate processing. [0002] It has been a while since plasma processing systems became available. Plasma processing systems that utilize inductively coupled plasma sources, electron cyclotron resonance (ECR) sources, capacitive sources, etc. have been introduced and adopted to varying degrees over the years to process semiconductor substrates and display panels. .. In a typical application example of plasma treatment, first, a source gas for treatment (etchant gas or deposition source gas) is introduced into the treatment chamber. Next, energy is supplied and plasma is generated from the source gas for processing. The generated plasma is maintained by additional energy. The additional energy is coupled to the plasma by various well-known methods such as electrostatic coupling, inductive coupling, and microwave coupling. The plasma is then utilized in treatments such as selective etching or deposition of thin films on the substrate, for example. [0003] Deposition involves depositing material on the surface of a substrate (such as a glass panel or wafer). For example, a deposited layer of silicon, silicon dioxide, silicon nitride, metal, etc. is formed on the surface of the substrate. Etching, on the other hand, is employed to selectively remove material from a predetermined area on the surface of the substrate. For example, etching shapes such as vias, contacts, and trenches are formed on the layer of the substrate. [0004] When processing a substrate, one of the most important parameters that engineers strive to improve is processing uniformity. Here, processing uniformity means the uniformity of the entire substrate surface, the uniformity between different substrates processed in the same processing chamber, and the uniformity between different substrates processed in different processing chambers. When the processing uniformity is high, for example, it is expected that the processing speed at different points on the substrate and the processing speed between different substrates undergoing the same production process are almost the same. In any case, it is unlikely that an area that is excessively processed and an area that is insufficiently processed will occur on the same substrate, or that the processing will be different for each substrate. Since treatment uniformity is an important determinant of yield, high levels of treatment uniformity tend to reduce the costs required by manufacturers. [0005] In many applications, it is difficult to maintain treatment uniformity. This is because various parameters related to the processing of the substrate fluctuate. For example, wafer area pressure (WAP) pressure), i.e., the pressure around the substrate surface, can fluctuate during substrate processing due to temperature changes that occur near the substrate. As is well known to those skilled in the art, when the WAP is high or low between different substrates, the processing performance of each substrate tends to be non-uniform. Further, even for the same substrate, when the WAP is high or low between different regions, the processing performance on the entire surface of the substrate tends to be non-uniform. [0006] One of the techniques for controlling WAP is to provide a confinement ring in the processing chamber. The confinement ring is generally configured to surround the substrate in an active region located above the substrate to be processed. This limits the scope of processing and thus increases the uniformity of WAP. This technique works well in many applications, but in many other applications, when processing a single substrate or multiple substrates in a single production process, it is processed in different chambers. It is desired to provide an adaptively changeable control processing environment in order to adapt to the fluctuation of WAP that occurs in some cases. [0007] In recent years, attempts have also been made to provide a movable confinement ring with adjustable emission conductance and therefore WAP. In this method, the WAP is controlled and the fluctuations that occur during processing are reduced. One specific approach uses a cam system to move the confinement ring up and down between the upper and lower electrodes. In this approach, annular cams with different heights on the surface engage the plunger / spring mechanism connected to the confinement ring vertically. As the cam rotates, the plunger moves up and down according to the different heights on the surface of the cam, and the confinement ring moves up and down accordingly. The cam mechanism is configured so that the conductance of the exhaust gas can be adjusted by controlling the gap between the confinement ring and the lower electrode, thereby adjusting the WAP of the active region above the substrate. [0008] While this technique works generally well, the problem with traditional cam-based approaches is that it can only provide a limited range of pressure control, low sensitivity, and low resolution (ie, low accuracy). For example, the slope or height provided on the surface of the cam is limited by the boundary between the plunger and the cam. This is because the plunger will be caught if the inclination is too large. As a result, the total distance that the plunger can move is limited and the range of pressure control is also limited. Also, conventional approaches using cams do not allow the pressure to change accurately during processing. In addition, the boundary between the plunger and the cam is worn, and the spring loses its elasticity, which tends to reduce the reliability of the system. [0009] One of the major concerns of manufacturers is the cost of owning processing tools. Ownership costs include, for example, the cost of obtaining and maintaining the system, the frequency of chamber cleaning required to maintain acceptable levels of processing performance, and the life of system components. Desirable processing often means processing that balances ownership costs with process parameters and allows high quality processing to be achieved at low cost. In addition, as features on the board become smaller and processing demands increase (eg, smaller microdimensions, higher aspect ratios, higher throughput, etc.), engineers are able to process at lower cost and with higher quality. We are constantly looking for new methods and devices that can achieve this. [0010] From the above, it can be seen that an improved method and device for moving the components (ie, the confinement ring) related to the processing of the substrate are needed. [0011] [Summary of Invention] One embodiment of the present invention relates to a plasma processing system for processing a substrate. The plasma processing system includes components related to the processing of the substrate. The component is, for example, a confinement ring or an electrode. The plasma processing system further comprises a gear drive assembly for linearly moving parts. In some embodiments, the gear drive assembly is configured to move the confinement ring to control pressure above the substrate. In other embodiments, the gear drive assembly is configured to move a plurality of parts. In a preferred embodiment, the gear drive assembly comprises a first gear, a second gear, and a positioning member. The first gear is configured to drive the second gear, and the second gear is configured to move the positioning member in a linear direction. Further, the positioning member is attached to the above-mentioned component, and as a result, when the positioning member moves in the linear direction, the component moves. [0012] Another embodiment of the present invention relates to a plasma processing system for processing a substrate. The plasma processing system includes electrodes for generating an electric field in the processing chamber and a confinement ring for confining the plasma in the processing chamber. The plasma processing system further comprises a gear drive assembly for moving the confinement ring or electrodes. The gear drive assembly includes at least a first gear, a second gear, and a positioning member. The first gear is configured to drive the second gear, and the second gear is configured to move the positioning member in a predetermined direction. The positioning member is attached to a confinement ring or electrode so that when the first positioning member is moved by the second gear, the confinement ring or electrode moves in a predetermined direction. [0013] In some embodiments, the position of the confinement ring is configured to form a gap between the confinement ring and the substrate when the substrate is placed in the processing chamber for processing. This gap is configured to control the conductance of the exhaust gas. [0014] In some embodiments, the first gear and the second gear are rotatably supported by a processing chamber. Also, the second gear is operably engaged with the first gear. Further, the second gear has a shaft and a first threaded surface provided on the shaft. The positioning member also has a second threaded surface movably coupled to the first threaded surface of the second gear to provide linear movement. [0015] In some embodiments, the gear drive assembly comprises a drive device for rotating the first gear. The drive device includes a motor and drive gears rotatably coupled to the motor. The drive gear is operably engaged with the first gear. When the motor rotates the drive gear, the drive gear drives and rotates the first gear, the first gear drives and rotates the second gear, and the rotating second gear linearizes the positioning member. Move in the direction. [0016] In another embodiment, the gear drive assembly further comprises a third gear and a second positioning member. The first gear is configured to drive the third gear. Further, the third gear is configured to move the second positioning member in a predetermined direction. Further, the second positioning member is attached to the confinement ring or electrode so that when the second positioning member is moved by the third gear, the uptake ring or electrode moves in a predetermined direction. In a related embodiment, the gear drive assembly further comprises a transfer gear for engaging and disengaging a second or third gear with respect to the first gear. When the second gear engages the transfer gear, the first positioning member moves in a predetermined direction, and when the third gear engages the transfer gear, the second positioning member is predetermined. Move in the direction of. [0017] In some embodiments, the first gear, the second gear, the third gear, and the transfer gear are rotatably supported by a processing chamber. The transfer gear is operably engaged with the first gear. The second gear has a shaft and a first threaded surface provided on the shaft. The first positioning member has a second threaded surface movably coupled to the first threaded surface of the second gear to provide linear movement. The third gear has a shaft and a first threaded surface provided on the shaft, and a second positioning member is a first of the third gear to provide linear movement. It has a second threaded surface that is movably coupled to the threaded surface. [0018] Another embodiment of the invention relates to a linear drive assembly for moving objects related to substrate processing. The linear drive assembly comprises a first gear and a second gear that operably engages the first gear. The linear drive assembly also comprises a positioning member having a first portion and a second portion. The first part is movably coupled to the second gear in a linear direction and the second part is attached to the object. In some embodiments, the positioning member comprises a male threaded surface having a constant pitch and the second gear comprises a female threaded surface having the same pitch as the male threaded surface. The male threaded surface of the positioning member is rotatably provided in the female threaded surface of the second gear. In another embodiment, the positioning member is a linear gear (eg, a rack and pinion device). [0019] In some embodiments, the linear drive assembly comprises a motor for driving the first gear. The linear drive assembly also includes a plurality of second gears and a plurality of positioning members. The plurality of second gears and the plurality of positioning members are provided around the first gear in a symmetrically spaced state. For example, when an external gear is used, the second gear is provided on the outer circumference of the first gear in a symmetrically spaced state, and when an internal gear (for example, a planetary gear) is used, the second gear is provided. The second gear is provided on the inner circumference of the first gear in a symmetrically spaced state. [0020] Linear drive assemblies can be used in a variety of plasma processing systems, including electrostatic coupling reactors, inductively coupled reactors, and ECR reactors. In a related embodiment, the linear drive assembly can be configured to move the confinement ring within the processing chamber of the plasma processing system. Also, the linear drive assembly can be configured to move the electrodes inside or outside the processing chamber of the plasma processing system. [0021] [0021] BEST MODE FOR CARRYING OUT THE INVENTION The present invention will then be described in detail in connection with some preferred embodiments exemplified in the accompanying drawings. In the following description, many items are specified so that the present invention may be fully understood. However, as will be apparent to those skilled in the art, the present invention can be practiced without specifying some or all of these items. Moreover, in order to avoid unnecessarily obscuring the present invention, a detailed description of the well-known processing process has been omitted. [0022] The present invention provides a linear drive assembly capable of moving objects related to substrate processing using advanced movement control. The linear drive assembly comprises multiple gears operably engaged with each other. The linear drive assembly also comprises a plurality of positioning members movably coupled to a predetermined gear set and structurally coupled to a movable object. The positioning member is configured to move the object in a linear direction as the predetermined gear set rotates. In one specific application, the positioning member is a shaft having a male thread configured to mesh with a female thread of a given gear set. When a predetermined gear set rotates, the rotation of the gear causes the female screw to rotate, and as a result, the shaft moves in a linear direction. Therefore, the use of gears and screws allows a high degree of control over the linear motion of the object. For example, gear / screw configurations allow for more accurate movement with higher resolution, sensitivity and reliability. [0023] One embodiment of the present invention relates to a plasma processing system capable of highly controlling the uniformity of processing. The plasma processing system is configured to process the substrate. The plasma processing system includes a processing chamber used for both generation and maintenance of plasma for processing, a lower electrode, an upper electrode, and a confinement ring. [0024] According to one aspect of the invention, the linear motion of the linear drive assembly is configured to control the gap between the confinement ring and the lower electrode during processing. Specifically, the linear drive assembly is provided so that the confinement ring can be moved up and down between the upper and lower electrodes to adjust the conductance of the exhaust gas. By adjusting the conductance of the exhaust gas, the pressure in the active region above the substrate (ie WAP) is maintained at the desired level suitable for processing. Therefore, during processing, the pressure is controlled with a small amount of change, resulting in increased processing uniformity, which increases substrate throughput, reduces device failure, and overall productivity of the substrate to be processed. Can be improved. [0025] According to another aspect of the invention, the linear motion of the linear drive assembly is configured to control the gap between the top electrode and the substrate during processing. Specifically, the linear drive assembly is provided to move the top electrode up and down to adjust the volume of the active region above the substrate. By adjusting the volume, the various parameters associated with the plasma treatment, such as plasma density and pressure, are maintained at the desired level suitable for the treatment. Similarly, plasma density and pressure are controlled with small changes during processing, resulting in increased processing uniformity, which increases substrate throughput, reduces device failure, and overalls the substrate to be processed. Productivity can be improved. [0026] According to another aspect of the invention, the linear motion of the linear drive assembly independently creates the gap between the confinement ring and the lower electrode and the gap between the upper electrode and the substrate during processing. It is configured to control. In a specific embodiment, the linear drive assembly is reconfigured to include additional gears. For example, a linear drive assembly comprises a second set of predetermined gears and positioning members. A first set of predetermined gears and positioning members is configured to move the confinement ring, and a second set of predetermined gears and positioning members is configured to move the upper electrodes. A transfer gear is also provided for operably engaging and disengaging a predetermined gear with the first gear. In this way, both gaps are controlled, and the process engineer can better control the processing conditions around the substrate to be processed. [0027] In a preferred embodiment, the invention is performed in a plasma reactor such as an electrostatically coupled plasma reactor commercially available from Lam Research Corporation in Fremont, California. Hereinafter, the electrostatically coupled plasma reactor will be illustrated and described, but the present invention can be carried out in any plasma reactor suitable for generating plasma, for example, an inductively coupled or ECR reactor. [0028] 1 and 2 are schematic views showing the plasma reactor 100 according to an embodiment of the present invention. The plasma reactor 100 generally includes a plasma processing chamber 102. An upper electrode 104 and a lower electrode 106 are provided in the chamber 102. The upper electrode 104 is provided above the lower electrode 106 and is coupled to a first RF (radio frequency) power source 108 via a matching network (not shown for simplification of drawings). The first RF power source 108 is configured to supply RF (radio frequency) energy to the upper electrode 104. Further, the lower electrode 106 is coupled to the second RF power supply 110, and the second RF power supply 110 is configured to supply RF energy to the lower electrode 106. [0029] The gap 111 between the upper electrode 104 and the lower electrode 106 generally determines the volume of the active region during treatment. Therefore, the dimensions of the gap 111 are configured to allow control of various parameters such as pressure and / or plasma density. Although not bound by theory, it is believed that the plasma density increases with increasing volume and decreases with increasing volume. As is well known to those skilled in the art, plasma density tends to affect processing speeds such as etching speeds. Therefore, the gaps are configured to balance the desired volume suitable for the process with the desired etching rate. [0030] In addition, the gap 111 is generally considered to be important for pressure control in the active region above the substrate. As a general rule, pressure is inversely proportional to volume, so a decrease in volume corresponds to an increase in pressure and an increase in volume corresponds to a decrease in pressure. Therefore, the dimensions of the gap 111 are preferably configured to balance the desired volume and desired pressure suitable for processing. [0031] Further, the plasma reactor 100 includes a chuck 112 provided on the upper surface of the lower electrode 106. The chuck 112 is configured to hold the substrate 114 during processing. The chuck 112 may be, for example, an ESC (electrostatic) chuck that fixes the substrate 114 to the surface by electrostatic force. Further, the substrate 114 is a processed product to be processed, and may be, for example, a semiconductor substrate to be subjected to etching, deposition, or other processing, or a glass panel to be processed in a flat panel display. [0032] The plasma chamber 102 is further provided with a gas port 116 for discharging a gaseous source material, such as etchant source gas, into the active region between the top electrode and the substrate. As shown in FIG. 2, the gas port 116 is provided inside the upper electrode 104. Further, an exhaust port 118 for discharging the by-product gas formed during the treatment is generally provided between the wall portion of the treatment chamber and the lower electrode 106. In FIG. 2, the exhaust port 118 is coupled to a pump 120 provided at the bottom of the chamber 102. The pump 120 is generally provided to properly maintain the pressure in the chamber 102. In one implementation example, a turbo molecular pump is used. [0033] For example, a process gas is introduced into the chamber through the gas port 116 to generate a plasma. Next, electric power is supplied to the electrodes 104 and 106, and a strong electric field is formed between the upper electrode 104 and the lower electrode 106. As is well known in the art, neutral gas molecules in process gases lose electrons when exposed to strong electric fields, leaving positively charged ions. As a result, the plasma contains positively charged ions, negatively charged electrons, and neutral gas molecules. Also, just above the substrate, a sheath voltage is generally generated. This activates the reaction of the treatment with the neutral seeds as it accelerates the ions towards the substrate. [0034] For further explanation, FIG. 4 shows a flow diagram of related operations related to substrate processing in a plasma reactor (eg, plasma reactor 100). Prior to the treatment, first, a conventional pretreatment step including loading and unloading of the substrate is carried out. A typical process usually goes through five steps. The first step 201 comprises pumping the processing chamber to a desired pressure. The second step 202 involves influxing the process gas into the processing chamber to stabilize the pressure. When the gas stabilizes, plasma is generated from the process gas in the third step 204. When the plasma is generated, in the fourth step 206, the plasma is stabilized at a specific pressure in the chamber. When the pressure in the chamber stabilizes, the substrate is processed in the fifth step 208. [0035] Returning to FIGS. 1 and 2, the plasma processing chamber 100 further comprises a confinement ring 130 configured to confine the plasma in the region above the substrate 114 in general. As shown in FIG. 2, the first portion of the confinement ring 130 is arranged so as to surround the outer circumference of the upper electrode 104, and the second portion surrounds the gap 111 between the upper electrode 104 and the lower electrode 106. It is located in. Thereby, the confinement ring 130 surrounds at least a portion of the active region above the substrate 114. Confinement rings 130 are symmetrically arranged around the substrate 114 to improve processing uniformity. [0036] As shown, the gap 132 is typically formed between the lower end 134 of the confinement ring 130 and the lower electrode 106. The gap 132 is generally provided to substantially confine the plasma in the volume defined by the top electrode 104 and the confinement ring 130 and to control the conductance of the exhaust gas. The lower ends of the confinement ring 130 are preferably provided at uniform intervals (eg, parallel to) the upper surface of the lower electrode 106. In this way, the gas distribution on the surface of the substrate 114 can be maintained uniformly. [0037] The size of the gap 132 generally determines the rate at which exhaust gas is removed from the active region during processing. Although it is not desirable to be bound by theory, it is believed that if the gap is too small, the gas flow will be impeded, resulting in non-uniform etching rates and fine particle contamination along the perimeter of the substrate. Further, if the gap is too large, the plasma cannot be properly confined in an appropriate volume, and it is considered that the etching rate becomes non-uniform (for example, non-uniform plasma). Further, it is generally considered that the gap is important for pressure control of the active region above the substrate. That is, since the pressure is inversely proportional to the exhaust velocity, a decrease in conductance corresponds to an increase in pressure, and an increase in conductance corresponds to a decrease in pressure. Therefore, the dimensions of the gap are preferably configured to balance the desired conductance with the desired pressure. [0038] 1 and 2 show a linear drive assembly 150 configured to move the confinement ring 130 between the upper electrode 104 and the lower electrode 106 according to an embodiment of the present invention. Moving the confinement ring 130 up and down during the process increases or decreases the conductance of the etchant source gas discharged from the plasma processing chamber 102, keeping the pressure within the desired pressure range suitable for the process. For example, by adjusting the pressure, it is possible to adapt to temperature fluctuations that occur during the processing of the substrates, and as a result, maintain uniformity between the substrates. In addition, the linear drive assembly 150 is configured to move the confinement ring up and down for loading and unloading the substrate 114. [0039] The linear drive assembly 150 generally comprises one first gear 152 and a plurality of second gears 154. Both the first gear 152 and the plurality of second gears 154 are rotatably supported by a cover 156 of the processing chamber 102. Further, the plurality of second gears 154 are operably engaged with the first gear 152. Further, the linear drive assembly 150 includes a plurality of positioning members 158 having a first portion 160 and a second portion 162, respectively. Each positioning member 158 is parallel to each other. Each of the first portions 160 is movably coupled to one of the second gears 154, allowing the positioning member 158 to be moved in the linear direction 166. The second member 162 is attached to the confinement ring 130, respectively. As shown in FIG. 1, the linear direction 166 is a direction perpendicular to the plane formed by the upper surface of the substrate 114. Further, a seal 175 is generally provided between the positioning member 158 and the cover 156 to close the boundary and eliminate leakage. [0040] Further, the linear drive assembly comprises a motor 161 and a drive gear 163 attached to the motor 161. Motors are well known to those of skill in the art and will not be described for brevity. The drive gear 163 is operably engaged with the first gear 152 and is configured to drive the first gear 152 when the motor operates. The motor 161 drives the drive gear 163, the drive gear 163 drives the first gear 152, the first gear 152 drives the plurality of second gears 154, and the plurality of second gears 154 correspond to each other. The positioning member 158 is moved in the linear direction 166. As a result, the confinement ring 130 moves in the linear direction 166 between the upper electrode 104 and the lower electrode 106. [0041] The direction of movement of the positioning member 158 along the linear path is generally determined by the direction of rotation of the second gear 154. For example, the linear drive assembly 150 moves the positioning member 158 upwards when the second gear 154 rotates clockwise, and moves the positioning member 158 when the second gear 154 rotates counterclockwise. It is configured to move downwards. [0042] Referring to FIG. 2, the plurality of positioning members 158 are screwably coupled to the plurality of second gears 154. That is, when the positioning member 158 and the second gear 154 are engaged with each other by a screw and the second gear 154 rotates, the positioning member 158 moves in the linear direction. The second gear 154 typically includes a nut portion 170 with a female threaded surface, and the positioning member 158 generally includes a threaded portion 172 with a male threaded surface. The male threaded surface of each positioning member 158 is configured to mesh with the female threaded surface of the corresponding second gear 154. Therefore, when the second gear 154 rotates, the threaded portion 172 of the positioning member 158 moves through the nut portion 170 of the rotating second gear 154. One of the specific advantages of using screws is that they are always engaged, which allows for very precise movement. [0043] Further, the positioning member / second gear configuration is generally configured such that the positioning member 158 moves by one thread each time the nut portion 170 makes one rotation. As is well known to those skilled in the art, the distance between the corresponding portions of adjacent threads measured along the length direction of the thread is commonly referred to as the pitch. Therefore, each time the nut portion 170 makes one rotation, the positioning member 158 moves by a distance of one pitch. For example, if 32 threads are cut per inch, the positioning member 158 moves 1/32 inch for each rotation of the second gear (eg, the nut portion 170). The thread cut may be configured to have a higher resolution. That is, by increasing the number of threads to be cut per inch, the positioning member 158 can be moved with a finer displacement amount, and as a result, the pressure can be finely adjusted. For example, a screw with about 10 to about 40 threads per inch works well. It should be noted that this is not a limitation, and the number of threads per inch can be changed according to the specific design of each processing chamber. [0044] To further illustrate the features of the present invention, FIG. 3 shows a top view of the linear drive assembly 150 of the plasma reactor 100. As described above, the linear drive assembly 150 includes one first gear 152, a plurality of second gears 154, a plurality of positioning members 158, and a drive gear 163. The plurality of second gears 154 and drive gear 163 are generally provided around the first gear 152. The movements of the second gear 154 are synchronized with each other. That is, the direction of movement (for example, clockwise or counterclockwise) and the amount of movement (for example, the number of moving teeth) are the same. [0045] Here, the linear drive assembly 150 is illustrated and described as using external spur gears. However, other gear structures may be employed to accommodate different types of processing chambers or to accommodate other external elements required to allow linear motion. For example, internal gears (eg planetary gears) also work well. When internal gears are used, a plurality of second gears and drive gears are provided on the inner circumference of the first gear. [0046] As shown in FIG. 3, the linear drive assembly 150 includes three second gears 154 and three positioning members 158. As is well known to those skilled in the art, the plane is defined by three points, so it is preferable that there are three positioning members for moving the confinement ring. Since the three positioning members 158 are configured to move the confinement ring 130 in a direction orthogonal to its center of gravity, the confinement ring 130 is maintained in a well-balanced and horizontal state. As shown, each of the second gear / positioning member configurations is symmetrically spaced around the first gear 152, with each positioning member 158 having a corresponding second gear. It is axially oriented to the center of gear 154. The present invention is not limited to the three positioning members, and it is possible to use any number of positioning members suitable for moving the confinement ring while maintaining balance. [0047] As is well known to those skilled in the art, gears need to be composed of similar teeth of approximately the same dimensions in order for all gears to mesh properly, i.e. to rotate without misalignment. .. Further, a small gap is usually provided between the gears so that the meshed gears move smoothly and quietly. One of the specific advantages of the gear assembly is that the gears are always meshed so that there is no creep or misalignment, which results in very accurate movement. [0048] One of the key factors in determining the sensitivity and resolution of a linear drive assembly is the proper selection of gear dimensions (eg teeth). It is generally considered that the larger the number of teeth, the higher the resolution. That is, as the number of teeth increases, the distance moved by the positioning member can be changed with a smaller amount of displacement, and therefore the pressure can be changed more finely. In essence, each gear has x-tooth resolution. More specifically, the number of teeth can be described as the individual segments that make up the gear. For example, a second gear with 10 teeth is divided into 10 segments. These segments correspond to the gradual movement of the second gear. When moving by one tooth, the second gear also moves by one segment, so the rotation of the second gear is only 1/10 rotation. Since the second gear and the positioning member are engaged, the positioning member moves by 1/10 pitch accordingly. If the pitch is 1/32 inch, the positioning member moves 1/320 inch. For example, a second gear with about 10 to about 48 teeth works well. It should be noted that this is not a limitation, and the number of teeth provided in the second gear can be changed according to the specific design of each processing chamber. [0049] Gears can be formed of any suitable material such as metal or plastic and can be manufactured using any known process such as casting, forging, extrusion molding, injection molding and the like. However, if the gear or the cover of the processing chamber undergoes thermal expansion (eg, at high temperatures), it is necessary to form them with materials that have approximately the same coefficient of thermal expansion. In this way, the gear and processing chamber covers expand at about the same rate. This is not a factor when the thermal expansion is small. This is because the gap between the gears is usually larger than the amount of thermal expansion. Further, by using a lubricant or oil between the gears, the influence of thermal expansion may be suppressed and the wear between the meshing gears may be reduced. [0050] As mentioned above, the gears are rotatably supported by the cover of the processing chamber. In one embodiment, bearing gears are used that allow the gears to rotate freely. As shown in FIG. 3, the first gear 152 is configured as a concentric ring having an inner circumference linked with a set of bearings 180. More specifically, a set of bearings 180 is provided between the inner circumference of the first gear 152 and the portion 182 of the cover 156. Therefore, portion 182 of cover 156 can be used as a passage for gas ports, sensors, manometers, and the like. Bearing gears are well known, and further description will be omitted for the sake of brevity. Further, the second gear is fixed to the cover of the processing chamber. In one implementation example, thrust bearings are used to attach the second gear to the cover of the processing chamber. [0051] The linear drive assembly (eg 150) generally forms part of a closed loop control system configured to reduce pressure fluctuations in the processing chamber. For example, the plasma processing apparatus may be configured to include a pressure sensor for measuring the pressure in the active region above the substrate and a controller or CPU for monitoring the measured pressure. Both the motor and the pressure sensor in the linear drive assembly are operably coupled to the controller. The pressure sensor is configured to generate an electrical pressure signal corresponding to the measured pressure. The controller is configured to receive an electrical pressure signal from the pressure sensor and transmit to the motor a corresponding electrical control signal that is at least partially based on the received signal. Further, the motor is configured to receive and execute an electrical control signal transmitted by the controller. The electrical control signal is generally related to the specific direction and gradual change in position of the motor. Since the pressure sensor, the controller, and the motor are well known in the art, detailed description thereof will be omitted. [0052] According to another embodiment of the invention, the linear motion of the linear drive assembly is configured to control the gap between the top electrode and the substrate. In this specific embodiment, the positioning member is attached to the upper electrode instead of the confinement ring. At this time, the linear drive assembly is configured to move the upper electrode up and down, thereby adjusting the volume of the active region above the substrate. By adjusting the volume, various parameters related to plasma processing such as plasma density and pressure are maintained at desired levels suitable for processing. [0053] To facilitate the description of this aspect of the invention, FIG. 5 shows a plasma reactor 100 with a linear drive assembly 700 configured to move the top electrode 104 within the processing chamber 102. In this figure, since the linear drive assembly 700 is created according to the teaching contents of the invention described above in relation to FIGS. 1 to 4, it will be briefly described. [0054] The linear drive assembly 700 generally comprises one first gear 702 and a plurality of second gears 704. Both the first gear 702 and the plurality of second gears 704 are rotatably supported by a cover 156 of the processing chamber 102. Further, the plurality of second gears 704 are operably engaged with the first gear 702. Further, the linear drive assembly 700 includes a plurality of positioning members 706 having a first portion 710 and a second portion 712, respectively. The first portion 710 is movably coupled to the second gear 704 in the linear direction 166, and the second portion 712 is attached to the upper electrode 104. As shown, the linear direction 166 is the direction perpendicular to the plane formed by the top surface of the substrate 114. Further, the positioning member 706 is screwably coupled to the second gear 704. As described above, the positioning member 706 moves in the linear direction 166 when the first gear 702 rotates due to the screw engagement between the positioning member 706 and the second gear 704. [0055] Further, the linear drive assembly 700 includes a motor 161 and a drive gear 163 attached to the motor 161. The drive gear 163 is operably engaged with the first gear 702 and is configured to drive the first gear 702 when the motor 161 operates. The motor 161 drives the drive gear 163, the drive gear 163 drives the first gear 702, the first gear 702 drives the plurality of second gears 704, and the plurality of second gears 704 correspond. The positioning member 706 is moved in the linear direction 166. As a result, the upper electrode 104 moves in the linear direction 166. [0056] In the above, the linear drive assembly is illustrated and described as moving a confinement ring or top electrode, but other parts may be moved to accommodate different processes. For example, a linear drive assembly may be used to move the lower electrodes. The present invention is not limited to moving parts in the processing chamber. For example, a linear drive assembly may be used to move an antenna or electrode provided outside the chamber. When this type of system is used, the linear drive assembly is generally coupled to the frame of the plasma reactor instead of the cover of the processing chamber as shown. Also, the linear drive assembly is not limited to moving one part, but can also be used to move multiple parts. For example, the linear drive assembly may be configured to move a plurality of confinement rings or a combination of a plurality of components such as a confinement ring and a top electrode. [0057] According to another embodiment of the invention, the linear motion of the linear drive assembly is configured to move both the confinement ring and the top electrode. This allows better control of various processing-related parameters. For example, by moving both the confinement ring and the top electrode, the pressure and plasma density in the active region above the substrate can be varied. Therefore, the uniformity between the substrates may be maintained by moving any of these objects. [0058] [0058] To facilitate the description of this aspect of the invention, FIGS. 6 and 7 show a plasma reactor 100 with a linear drive assembly 800 configured to move multiple objects within a processing chamber 102. In this figure, the linear drive assembly 800 is made according to the teachings of the invention described above in relation to FIGS. 1-5. The linear drive assembly 800 then moves the confinement ring 130 between the upper and lower electrodes 106 and within the processing chamber 102 to control various processing-related parameters. It is configured to move 104 (both with good movement control). [0059] The linear drive assembly 800 generally comprises one first gear 802 and a plurality of second gears 804. Both the first gear 802 and the plurality of second gears 804 are rotatably supported by the cover 156 of the processing chamber 102. Further, the plurality of second gears 804 are operably engaged with the first gear 802. The linear drive assembly 800 also includes a plurality of third gears 806 and a plurality of fourth gears 808, which are rotatably supported while being fixed by the processing chamber 102. Has been done. The set of the first positioning member 810 is movably coupled to the set of the third gear 806, and the set of the second positioning member 812 is movably coupled to the set of the fourth gear 808. There is. The set of both positioning members 810,812 are rotatably coupled in the linear direction 166. As shown, the linear direction 166 is the direction perpendicular to the plane formed by the top surface of the substrate 114. Further, the set of the first positioning member 810 is attached to the confinement ring 130, and the set of the second positioning member 812 is attached to the upper electrode 104. [0060] Further, the second gear 804 is movably coupled to the processing chamber 102 and is configured to engage and disengage from the third gear 806 and the fourth gear 808. More specifically, the second gear 804 has at least two positions on the cover of the processing chamber 102. The first position (shown position) operably engages the second gear 804 with the third gear 806, and the second position operates the second gear 804 with the fourth gear 808. Engage as much as possible. In one embodiment, the second gear 804 is configured to slide between these two positions through a groove provided in the cover 156. In this embodiment, a clutch is provided to move the second gear between these two positions and to connect or disconnect the second gear to the third and fourth gears. Has been done. In one implementation, the clutch is configured as part of a closed-loop process that automatically engages and disengages the second gear 804. Since the clutch is well known in the art, detailed description thereof will be omitted. [0061] The linear drive assembly also includes a motor 161 and a drive gear 163 attached to the motor 161. The drive gear 163 is operably engaged with the first gear 802 and is configured to drive the first gear 802 when the motor 161 operates. When the second gear 804 engages the third gear 806, the motor 161 drives the drive gear 163, the drive gear 163 drives the first gear 802, and the first gear 802 drives the plurality of second gears 802. The gear 804 is driven, the plurality of second gears 804 drive the plurality of third gears 806, and the third gear moves the corresponding positioning member 810 in the linear direction 166. As a result, the confinement ring 130 moves in the linear direction 166 between the upper electrode 104 and the lower electrode 106. When the second gear 804 engages the fourth gear 808, the motor 161 drives the drive gear 163, the drive gear 163 drives the first gear 802, and the first gear 802 drives the plurality of second gears 802. The gear 804 is driven, the plurality of second gears 804 drive the plurality of fourth gears 808, and the fourth gear moves the corresponding positioning member 812 in the linear direction 166. As a result, the upper electrode 102 moves in the linear direction 166. [0062] Specifically, the set of first positioning member 810 is screwed into the third gear 806 and the second positioning member 812 is screwed into the fourth gear 808. There is. As described above, when the positioning member and the corresponding gear are engaged with each other by a screw and the corresponding gear rotates, the positioning member moves in the linear direction. [0063] Further, the plurality of second gears 804 and the drive gear 163 are generally provided around the first gear 802. Therefore, the movements of the second gear are synchronized with each other. That is, the direction of movement (for example, clockwise or counterclockwise) and the amount of movement (for example, the number of moving teeth) are the same. Further, the set of the third gear 806 is generally provided near the second gear 804 and above the confinement ring 130, and the set of the fourth gear 808 is generally the second gear. It is provided near the 804 and above the upper electrode 102. As shown, the third gear / positioning member configuration and the fourth gear / positioning member configuration are arranged symmetrically around the first gear, respectively, and each positioning member is arranged. Axial oriented to the center of the corresponding gear. [0064] Similar to the linear drive assembly described in FIGS. 1-5, the linear drive assembly described in FIGS. 6 and 7 is configured with high resolution by adjusting the number of gear teeth and the pitch of the positioning members. .. The linear drive assemblies of FIGS. 6 and 7 may also form part of the control loop system as described above. [0065] As can be seen from the above, the present invention can provide many advantages over the prior art. Even another embodiment or implementation example has one or more advantages listed below. [0066] One of the advantages of the present invention, the linear drive A is that the assembly is a high resolution, high sensitivity, to provide accurate movement of reliable. As a result, parts such as the confinement ring and the upper electrode can be moved with a wider range of control. Therefore, by controlling parameters such as wafer region pressure and plasma density to increase processing uniformity (ie, overall substrate surface uniformity and inter-board uniformity), substrate throughput can be improved and device failures can occur. It can be reduced and the overall productivity of the substrate to be processed can be increased. [0067] Another advantage of the present invention is cost effectiveness. For example, the present invention is configured to use only a single motor to move multiple objects within a processing chamber. The present invention can further reduce the amount of consumable parts (eg, wear). As a result, the cost of acquiring and maintaining the system is reduced. Another specific advantage of the present invention is that control is performed in real time. That is, the linear movement can be performed during the processing period of one substrate. [0068] Although the present invention has been described above in some preferred embodiments, various alternatives, replacements, and equivalents are possible within the scope of the invention. For example, although only spur gears have been illustrated and described, other gear configurations such as helical gears, angle gears, worm gears, bevel gears, fan gears, belts, and / or chains may be used. Further, the positioning member / second gear configuration may be configured as a rack and pinion gear configured to move in the linear direction. Further, although only the motor having the drive gear has been illustrated and described, other drive mechanisms may be used. For example, the motor may be directly coupled to the first gear or indirectly coupled using a belt or chain. [0069] It should be noted that there are many alternative methods for realizing the methods and devices according to the present invention. For example, the linear drive assembly is described as being configured to move the confinement ring and the upper electrode, but may be configured to move other objects such as the lower electrode. Further, the object may be moved in a linear direction other than the direction perpendicular to the substrate. For example, a linear drive assembly may be used to move an object in a direction parallel to the surface of the substrate. [0070] The present invention can also be used in any reactor suitable for etching or deposition. For example, the present invention can be used in any suitable and known deposition process including chemical vapor deposition (CVD), plasma CVD (PECVD), physical vapor deposition (PVD) such as sputtering. Furthermore, the present invention can be used in any suitable and known etching process including dry etching, plasma etching, reactive ion etching (RIE), magnetic reactive ion etching (MERIE), electron cyclotron resonance (ECR) and the like. is there. [0071] Therefore, the appended claims are to be construed as including all such substitutions, substitutions and equivalents within the true spirit and scope of the invention. [Simple explanation of drawings] The present invention is illustrated, but not exclusively, in the accompanying drawings in which similar elements are similarly numbered. FIG. 1 is a perspective view showing a plasma reactor in a state where a part is removed according to an embodiment of the present invention. 2 is a side sectional view of the plasma reactor of FIG. 1. FIG. 3 is an upper sectional view of the plasma reactor of FIG. 1. FIG. FIG. 4 is a flow chart showing related steps related to substrate processing in the plasma reactors of FIGS. 1 to 3 according to an embodiment of the present invention. FIG. 5 is a perspective view showing a plasma reactor in a state where a part is removed according to an embodiment of the present invention. FIG. 6 is a perspective view showing a plasma reactor in a state where a part is removed according to an embodiment of the present invention. 7 is an upper sectional view of the plasma reactor of FIG. 6. FIG. [Explanation of symbols] 100 ... Plasma reactor 102 ... Plasma processing chamber 104 ... Upper electrode 106 ... Lower electrode 108 ... 1st RF power supply 110 ... 2nd RF power supply 111 ... Gap 112 ... Chuck 114 ... board 116 ... gas port 118 ... Exhaust port 120 ... pump 130 ... Confinement ring 132 ... Gap 134 ... the bottom of the trap ring 150 ... Linear drive assembly 152 ... 1st gear 154 ... 2nd gear 156 ... Processing chamber cover 158 ... Positioning member 160 ... the first part of the positioning member 161 ... Motor 162 ... the second part of the positioning member 163 ... Drive gear 166 ... Straight line direction 170 ... the nut part of the second gear 172 ... Threaded part of positioning member 175 ... seal 180 ... Bearing 182 ... Cover part 700 ... Linear drive assembly 702 ... 1st gear 704 ... 2nd gear 706 ... Positioning member 710 ... the first part of the positioning member 712 ... the second part of the positioning member 800 ... Linear drive assembly 802 ... 1st gear 804 ... 2nd gear 806 ... 3rd gear 808 ... 4th gear 810 ... 1st positioning member 812 ... Second positioning member
7 sheets
Sheet 1 Sheet 2 Sheet 3 Sheet 4 Sheet 5 Sheet 6 Sheet 7
Every citation, both ways
| Document | Relation | Office | Cited during |
|---|---|---|---|
| JPH03203317A | Cites | Japan | Examiner |
| JPH0786252A | Cites | Japan | Examiner |
| JPH0927396A | Cites | Japan | Examiner |
| JPH11162957A | Cites | Japan | Examiner |
| JPS62158342A | Cites | Japan | Examiner |
| JPS63193527A | Cites | Japan | Examiner |
| JP62158342A | Cites | Japan | – |
| JP11162957A | Cites | Japan | – |
| JP63193527A | Cites | Japan | – |
| JP07086252A | Cites | Japan | – |
| JP03203317A | Cites | Japan | – |
| JP09027396A | Cites | Japan | – |
19 members in 9 offices
Priority claims3
| Document | Office | Kind | Date |
|---|---|---|---|
| 09474843 | United States of America | – | |
| 47484399 | United States of America | A | |
| 0100057 | United States of America | W |
Members19
| Document | Office | Kind | |
|---|---|---|---|
| WO0150498A1 | World Intellectual Property Organization (WIPO) | A1 | |
| AU2925701A | Australia | A | |
| US6350317B1 | United States of America | B1 | |
| US2002100555A1 | United States of America | A1 | |
| KR20020063599A | Republic of Korea | A | |
| EP1243017A1 | European Patent Office (EPO) | A1 | |
| IL150254A0 | Israel | A0 | |
| WO0150498A9 | World Intellectual Property Organization (WIPO) | A9 | |
| JP2003519908A | Japan | A | |
| CN1429398A | China | A | |
| US6669811B2 | United States of America | B2 | |
| US2004108301A1 | United States of America | A1 | |
| US6863784B2 | United States of America | B2 | |
| EP1243017B1 | European Patent Office (EPO) | B1 | |
| DE60127232D1 | Germany | D1 | |
| KR100751748B1 | Republic of Korea | B1 | |
| DE60127232T2 | Germany | T2 | |
| CN100392792C | China | C | |
| JP4991069B2This record | Japan | B2 |
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Numbers
- Publication
- 4991069
- Application
- 550778
Titles2
- Japanese
- プラズマ処理システムで用いられる直線駆動システム
- English
- Linear drive system used in plasma processing system
Classification
- CPC, 3
- H01J37/32623
- H01J37/32
- H01J37/32568
- IPC, 6
- H01L21 3065
- H01L21 205
- C23C16 509
- H01J37 32
- H05H1 46
- H10P14 24
