Exposure apparatus and method
32 claims: 6 independent, 26 dependent
- 1露光光が照射される基板を保持する基板保持装置であって、 基部と、 前記基部上に形成され、前記基板の裏面を支持する支持部と、 前記基部上に形成され、前記支持部に支持された前記基板の裏面と対向する第1上面を有し、前記支持部に支持された前記基板と前記基部との間の第1空間を囲む第1周壁と、 前記基部上に形成され、前記支持部に支持された前記基板の裏面とギャップを介して対向する第2上面を有し、前記第1周壁を囲む第2周壁と、 前記基部上に形成され、前記支持部に支持された前記基板の裏面と対向する第3上面を有し、前記支持部及び前記第2周壁を囲む第3周壁と、 前記第1周壁と前記第2周壁との間の第2空間へ気体を供給可能な流通口と、 前記第2周壁と前記第3周壁との間の第3空間の流体を吸引する第1吸引口と、を備えた基板保持装置。
- 2前記第1吸引口の吸引動作により、前記第2空間から前記ギャップを介して前記第3空間に向かう気体の流れを生成する請求項1記載の基板保持装置。
- 3前記気体の流れにより、前記第1空間及び前記第2空間に液体が浸入することを抑制する請求項2記載の基板保持装置。
- 4前記第2空間は、前記流通口を介して大気開放されている請求項1~3のいずれか一項記載の基板保持装置。
- 5前記流通口は、前記第1周壁と前記第2周壁との間の前記基部上で前記第1周壁の周方向に沿って所定間隔で複数形成されている請求項1~4のいずれか一項記載の基板保持装置。
- 6前記第1周壁と前記第2周壁との間の前記基部上に形成され、前記第1周壁を囲むように形成された第1溝をさらに備え、 前記流通口は、前記第1溝内に形成されている請求項1~5のいずれか一項記載の基板保持装置。
- 7前記第1吸引口は、前記第2周壁と前記第3周壁との間の前記基部上に形成され、前記第2周壁に沿って所定間隔で複数形成されている請求項1~6のいずれか一項記載の基板保持装置。
- 8前記第2周壁と前記第3周壁との間の前記基部上に形成され、前記第2周壁を囲むように形成された第2溝をさらに備え、 前記第1吸引口は、前記第2溝内に形成されている請求項1~7のいずれか一項記載の基板保持装置。
- 9前記支持部は、前記基部上において、前記第2周壁と前記第2溝との間、及び前記第2溝と前記第3周壁との間に配置された複数のピン状突起部を含む請求項8記載の基板保持装置。
- 10前記第3周壁は、前記支持部に支持された前記基板の裏面と前記第3上面とが接触するように形成される請求項1~9のいずれか一項記載の基板保持装置。
- 11前記第1周壁の内側、及び前記第2周壁と前記第3周壁との間の前記基部上に設けられ、前記第1空間及び前記第3空間を負圧にするために前記第1空間及び前記第2空間のそれぞれから流体を吸引する第2吸引口をさらに備えた請求項1~10のいずれか一項記載の基板保持装置。
- 12前記第1空間及び前記第3空間を負圧にすることによって、前記基板の裏面を前記支持部材で吸着保持する請求項11記載の基板保持装置。
- 13前記第2周壁と第3周壁との間において、前記第2吸引口は、前記第2周壁に対して前記第1吸引口よりも離れて形成される請求項11又は12記載の基板保持装置。
- 14前記基部上に形成され、前記支持部に支持された前記基板の裏面と対向する第4上面を有し、前記第3周壁を囲む第4周壁と、 前記第3周壁と前記第4周壁との間の流体を吸引する第3吸引口とをさらに備えた請求項1~13のいずれか一項記載の基板保持装置。
- 15前記第3吸引口は、前記第3周壁と前記第4周壁との間の前記基部上に形成され、前記第3周壁の周方向に沿って所定間隔で複数形成されている請求項14記載の基板保持装置。
- 16前記第3周壁と前記第4周壁との間の前記基部上に形成され、前記第3周壁を囲むように形成された第3溝をさらに備え、 前記第3吸引口は、前記第3溝内に形成されている請求項14又は15記載の基板保持装置。
- 17前記第3周壁と前記第4周壁との間の第4空間と、前記第3周壁に対して前記第4周壁の外側の外部空間との間で気体を流通可能な流路をさらに備える請求項14~16のいずれか一項記載の基板保持装置。
- 18前記流路は、前記第4周壁の一部に設けられたスリットを含む請求項17記載の基板保持装置。
- 19前記流路は、前記第4周壁の前記第4上面により形成される請求項17又は18記載の基板保持装置。
- 20前記支持部材に支持された前記基板の裏面と前記第1周壁の第1上面との間にはギャップが形成される請求項1~19のいずれか一項記載の基板保持装置。
- 21前記第1、第2、及び第3周壁はそれぞれ、前記基板の外形と実質的に相似な環状である請求項1~20のいずれか一項記載の基板保持装置。
- 22前記第1空間の中心と前記基板の中心とがほぼ一致するように前記基板を保持する請求項21記載の基板保持装置。
- 23請求項1~請求項22のいずれか一項記載の基板保持装置を備え、当該基板保持装置に保持された基板を液体を介して露光する露光装置。
- 24前記基板保持装置に対して前記基板を搬送可能な搬送装置を備え、 前記第1空間は、前記基板の裏面のうち前記搬送装置と接触する領域に応じて設定されている請求項23記載の露光装置。
- 25請求項23又は請求項24記載の露光装置を用いて基板を露光することと、 該露光された基板を現像することと、を含むデバイス製造方法。
- 26液浸露光を行う露光方法において、 基板保持装置に基板を保持することと、 前記基板保持装置に保持された前記基板を露光することとを含み、 前記基板保持装置は、 基部と、 前記基部上に形成され、前記基板の裏面を支持する支持部と、 前記基部上に形成され、前記支持部に支持された前記基板の裏面と対向する第1上面を有し、前記支持部に支持された前記基板と前記基部との間の第1空間を囲む第1周壁と、 前記基部上に形成され、前記支持部に支持された前記基板の裏面とギャップを介して対向する第2上面を有し、前記第1周壁を囲む第2周壁と、 前記基部上に形成され、前記支持部に支持された前記基板の裏面と対向する第3上面を有し、前記支持部及び前記第2周壁を囲む第3周壁と、 前記第1周壁と前記第2周壁との間の第2空間へ気体を供給可能な流通口と、 前記第2周壁と前記第3周壁との間の第3空間の流体を吸引する第1吸引口と、を備える露光方法。
- 27前記基板の表面の一部に液体の液浸領域を形成することをさらに含み、 前記基板は前記液体を介して露光される請求項26記載の露光方法。
- 28前記基板の露光中に、前記第1吸引口を介して前記第3空間内の流体を吸引することをさらに含む請求項26又は27記載の露光方法。
- 29前記基板保持装置は、前記基部上に形成され、前記基板を吸着保持するために前記第1空間内の気体を吸引する第2吸引口をさらに備え、 前記第2吸引口を用いた吸引動作を開始した後に、前記第1吸引口を用いた吸引動作が開始される請求項26~28のいずれか一項記載の露光方法。
- 30前記基板の露光終了後、前記第2吸引口を用いた吸引動作を停止することと、 前記第2吸引口を用いた吸引動作を終了後に、前記第1吸引口を用いた吸引動作を停止することとを含む請求項29記載の露光方法。
- 31前記基板保持装置は、前記基部上に設けられ、前記第3周壁の外側に設けられた第3吸引口をさらに備え、 前記基板の露光終了後、前記第2吸引口を用いた吸引動作を停止する前に、前記第3吸引口を用いて、前記第3周壁の外側の流体を吸引することをさらに含む請求項30記載の露光方法。
- 32請求項26~請求項31のいずれか一項の露光方法を用いて基板を露光することと、 該露光された基板を現像することと、を含むデバイス製造方法。
Independent claims32
122 paragraphs, as filed
The present invention relates to a substrate holding device for holding a substrate, an exposure device for exposing a substrate through a liquid, an exposure method, and a device manufacturing method. The present application claims priority based on Japanese Patent Application No. 2005-354463 filed on December 8, 2005, the contents of which are incorporated herein by reference.
As an exposure apparatus used in a photolithography step, an immersion type exposure apparatus that exposes a substrate through a liquid as disclosed in the following patent documents is known.<patcit num="1"><text>International Publication No. 99/49 504 Pamphlet</text></patcit><patcit num="2"><text>Japanese Unexamined Patent Publication No. 2004-289127</text></patcit>
<p> In an immersion exposure apparatus, if a liquid enters the space on the back surface side of the substrate through a gap between the substrate and the substrate stage and the liquid adheres to the back surface of the substrate, various problems may occur. There is. For example, if a liquid adheres to a predetermined area on the back surface of a substrate, the holder of the substrate stage may not be able to hold the substrate well. Alternatively, when the substrate is unloaded from the holder using the transport device, the liquid may adhere to the transport device in contact with the back surface of the board, or the liquid may scatter in the transport path, resulting in further damage. is there.</p><p> The present invention provides a substrate holding device capable of suppressing the adhesion of liquid to a predetermined region on the back surface of the substrate, an exposure device for exposing the substrate through the liquid, an exposure method, and a device manufacturing method using the exposure device and the exposure method. The purpose is to provide.</p>
<p> The present invention employs the following configuration.</p><p> According to the first aspect of the present invention, it is a substrate holding device for holding a substrate to be irradiated with exposure light, and is formed on a base portion, a support portion formed on the base portion and supporting the back surface of the substrate, and on the base portion. A first peripheral wall formed and having a first upper surface facing the back surface of the substrate supported by the support and surrounding a first space between the substrate supported by the support and the base, and formed on the base. A second peripheral wall that has a second upper surface facing the back surface of the substrate supported by the support portion through a gap and surrounds the first peripheral wall, and a back surface of the substrate formed on the base portion and supported by the support portion. A third peripheral wall having a third upper surface facing each other and surrounding a support portion and a second peripheral wall, a flow port capable of supplying gas to a second space between the first peripheral wall and the second peripheral wall, and a second peripheral wall. A substrate holding device including a first suction port for sucking a fluid in a third space between the third peripheral wall and the third peripheral wall is provided.</p><p> According to the first aspect of the present invention, it is possible to prevent the liquid from adhering to a predetermined region on the back surface of the substrate.</p><p> According to the second aspect of the present invention, there is provided an exposure device provided with the substrate holding device of the above aspect and exposing the substrate held by the substrate holding device through a liquid.</p><p> According to the second aspect of the present invention, it is possible to prevent the liquid from adhering to a predetermined region on the back surface of the substrate, so that the substrate can be exposed satisfactorily.</p><p> According to the third aspect of the present invention, there is provided a device manufacturing method including exposing a substrate using the exposure apparatus of the above aspect and developing the exposed substrate.</p><p> According to the third aspect of the present invention, the device can be manufactured using an exposure apparatus capable of satisfactorily exposing the substrate. According to the fourth aspect of the present invention, the exposure method for performing immersion exposure includes holding a substrate on a substrate holding device and exposing the substrate held by the substrate holding device. The substrate holding device is formed on a base portion, a support portion formed on the base portion and supporting the back surface of the substrate, and a first upper surface surface formed on the base portion and opposed to the back surface surface of the substrate supported by the support portion. A first peripheral wall that surrounds the first space between the substrate that has and is supported by the support and the base thereof, and the back surface of the substrate that is formed on the base and is supported by the support and through a gap. It has a second peripheral wall that has a second upper surface that faces the first peripheral wall, and a third upper surface that is formed on the base of the peripheral wall and faces the back surface of the substrate that is supported by the support portion. Between the 3rd peripheral wall surrounding the 2nd peripheral wall, the flow port capable of supplying gas to the 2nd space between the 1st peripheral wall and the 2nd peripheral wall, and the 2nd peripheral wall and the 3rd peripheral wall thereof. An exposure method is provided that includes a first suction port that sucks the fluid in the third space of the above. According to the fourth aspect of the present invention, it is possible to suppress the liquid from adhering to a predetermined region on the back surface of the substrate, and to satisfactorily expose the substrate through the liquid. According to a fifth aspect of the present invention, there is provided a device manufacturing method including exposing a substrate using the exposure method of the above aspect and developing the exposed substrate. According to the fifth aspect of the present invention, the device can be manufactured by using an exposure method capable of satisfactorily exposing the substrate.</p>
<p> According to the present invention, it is possible to prevent the liquid from adhering to a predetermined region on the back surface of the substrate and to expose the substrate satisfactorily.</p>
<figref num="1">It is a schematic block diagram which shows the exposure apparatus which concerns on this embodiment.</figref><figref num="2">It is a side sectional view of the table which concerns on this embodiment.</figref><figref num="3">It is a top view of the table in the state which holds the substrate.</figref><figref num="4">It is a top view of the table with the substrate removed.</figref><figref num="5">It is a top view in the state which the substrate and the plate member are removed.</figref><figref num="6">It is a side sectional view which shows the main part of the table which concerns on this embodiment.</figref><figref num="7">It is a top view which shows the main part of the table which concerns on this embodiment.</figref><figref num="8">It is a schematic diagram for demonstrating the operation of the table which concerns on this embodiment.</figref><figref num="9">It is a schematic diagram for demonstrating the flow of a gas.</figref><figref num="10">It is a schematic diagram for demonstrating the flow of a gas.</figref><figref num="11">It is a schematic diagram for demonstrating the flow of a gas.</figref><figref num="12A">It is a figure which shows the state which holds the back surface of the substrate by the transport device.</figref><figref num="12B">It is a figure which shows the state which holds the back surface of the substrate by the transport device.</figref><figref num="13">It is a flowchart which shows an example of the manufacturing process of a micro device.</figref>
Code description
1 ... Immersion system, 4 ... Board stage, 4T ... Table, 7 ... Control device, 30 ... Base material, 31 ... 1st peripheral wall, 31A ... 1st top surface , 32 ... 2nd peripheral wall, 32A ... 2nd upper surface, 33 ... 3rd peripheral wall, 33A ... 3rd upper surface, 34 ... 4th peripheral wall, 34A ... 4th upper surface, 37 ... slit, 41 ... 1st space, 42 ... 2nd space, 43 ... 3rd space, 44 ... 4th space, 51 ... 1st groove, 52 ... 2 grooves, 53 ... 3rd groove, 60 ... distribution port, 61 ... 1st suction port, 62 ... 2nd suction port, 63 ... 3rd suction port, 81 ... 1 Support member, 100 ... Conveyor, EL ... Exposure light, EX ... Exposure device, HD1 ... 1st holder, LQ ... Liquid, LR ... Immersion area, P .. .substrate
Hereinafter, embodiments of the present invention will be described with reference to the drawings, but the present invention is not limited thereto. In the following description, an XYZ Cartesian coordinate system will be set, and the positional relationship of each member will be described with reference to this XYZ Cartesian coordinate system. Then, the predetermined direction in the horizontal plane is the X-axis direction, the direction orthogonal to the X-axis direction in the horizontal plane is the Y-axis direction, and the direction orthogonal to each of the X-axis direction and the Y-axis direction (that is, the vertical direction) is the Z-axis direction. To do. Further, the rotation (tilt) directions around the X-axis, Y-axis, and Z-axis are the θX, θY, and θZ directions, respectively.
FIG. 1 is a schematic configuration diagram showing an exposure apparatus EX according to the present embodiment. In FIG. 1, the exposure apparatus EX exposes the mask stage 3 which holds and moves the mask M, the substrate stage 4 which holds and moves the substrate P, and the mask M which is held by the mask stage 3. The illumination system IL illuminated by EL, the projection optical system PL that projects the pattern image of the mask M illuminated by the exposure light EL on the substrate P, and the optical path space K of the exposure light EL near the image plane of the projection optical system PL. A liquid immersion system 1 that forms a liquid immersion region LR on an object (for example, substrate P) facing the projection optical system PL so as to fill the liquid LQ, and a control device 7 that controls the operation of the entire exposure device EX. It has. Further, the exposure apparatus EX includes a transfer device 100 for loading the substrate P on the substrate stage 4 and unloading the substrate P from the substrate stage 4.
The substrate referred to here includes a substrate such as a semiconductor wafer coated with a film such as a photosensitive material (photoresist) or a protective film. The mask contains a reticle on which a device pattern that is reduced and projected onto the substrate is formed. Further, in the present embodiment, a transmissive mask is used as the mask, but a reflective mask may be used.
The illumination system IL illuminates a predetermined illumination area on the mask M with an exposure light EL having a uniform illuminance distribution. The exposure light EL emitted from the illumination system IL includes, for example, far-ultraviolet light (DUV light) such as emission lines (g-line, h-line, i-line) and KrF excimer laser light (wavelength 248 nm) emitted from a mercury lamp. ArF excimer laser light (wavelength 193 nm) and F<sub>2</sub>Vacuum ultraviolet light (VUV light) such as laser light (wavelength 157 nm) is used. In this embodiment, ArF excimer laser light is used as the exposure light EL.
The mask stage 3 can be moved in the X-axis, Y-axis, and θZ directions while holding the mask M by a mask stage driving device including an actuator such as a linear motor. The position information of the mask stage 3 (and thus the mask M) is measured by the laser interferometer 3L. The laser interferometer 3L measures the position information of the mask stage 3 using the reflection surface 3K provided on the mask stage 3. The control device 7 controls the mask stage drive device based on the measurement result of the laser interferometer 3L, and controls the position of the mask M held by the mask stage 3.
The reflector 3K may include not only a plane mirror but also a corner cube (retroreflector). Instead of fixing the reflector 3K to the mask stage, for example, the end surface (side surface) of the mask stage 3 is mirror-processed. May form a reflective surface. Further, the mask stage 3 may have a structure capable of coarse and fine movement disclosed in, for example, Japanese Patent Application Laid-Open No. 8-130179 (corresponding US Pat. No. 6,721,034).
The projection optical system PL projects a pattern image of the mask M onto the substrate P at a predetermined projection magnification, has a plurality of optical elements, and these optical elements are held by the lens barrel PK. The projection optical system PL of the present embodiment is a reduction system having a projection magnification of, for example, 1/4, 1/5, 1/8, etc., and forms a reduced image of a mask pattern in a projection area conjugate with the above-mentioned illumination area. To do. The projection optical system PL may be a reduction system, a 1x system, or an enlargement system. In the present embodiment, the optical axis AX of the projection optical system PL is parallel to the Z-axis direction. Further, the projection optical system PL may be any of a refraction system that does not include a reflection optical element, a reflection system that does not include a refractive optical element, and a reflection / refraction system that includes a reflection optical element and a refraction optical element. Further, the projection optical system PL may form either an inverted image or an upright image.
The board stage 4 is provided on the stage body 4B, the table 4T mounted on the stage body 4B, and the table 4T, and is held by the first holder HD1 and the first holder HD1 that hold the board P detachably. It includes a plate member T arranged so as to surround the periphery of the substrate P, and a second holder HD2 provided on the table 4T and holding the plate member T detachably.
The stage body 4B is non-contactly supported by the air bearing 4A with respect to the upper surface (guide surface) of the base member BP. The upper surface of the base member BP is substantially parallel to the XY plane, and the substrate stage 4 can move in the XY direction on the base member BP.
The substrate stage 4 can be moved on the base member BP with the substrate P held in the first holder HD1 by a substrate stage drive device including an actuator such as a linear motor. The board stage drive device moves the stage body 4B on the base member BP in the X-axis direction, the Y-axis direction, and the θZ direction to move the table 4T mounted on the stage body 4B in the X-axis direction and Y. It includes a first drive system that can move in the axial and θZ directions, and a second drive system that can move the table 4T in the Z-axis direction, θX direction, and θY direction with respect to the stage body 4B.
The first drive system includes an actuator such as a linear motor. The second drive system includes an actuator 4V such as a voice coil motor interposed between the stage body 4B and the table 4T, and a measuring device (encoder, etc.) (not shown) that measures the driving amount of each actuator. .. The table 4T is supported on the stage body 4B by at least three actuators 4V. Each of the actuators 4V can drive the table 4T independently of the stage body 4B in the Z-axis direction, and the control device 7 adjusts the drive amount of each of the three actuators 4V to the stage body 4B. On the other hand, the table 4T is driven in the Z-axis direction, the θX direction, and the θY direction. In this way, the board stage drive device including the first and second drive systems moves the table 4T of the board stage 4 in the directions of 6 degrees of freedom in the X-axis, Y-axis, Z-axis, θX, θY, and θZ directions. It is movable. By controlling the board stage drive device, the control device 7 has 6 degrees of freedom in the X-axis, Y-axis, Z-axis, θX, θY, and θZ directions on the surface of the board P held in the first holder HD1 of the table 4T. The position with respect to the direction of degrees can be controlled.
The position information of the table 4T (and thus the substrate P) of the substrate stage 4 is measured by the laser interferometer 4L. The laser interferometer 4L measures the position information about the X-axis, the Y-axis, and the θZ direction of the table 4T by using the reflection surface 4K provided on the table 4T. Further, the surface position information (position information regarding the Z-axis, θX, and θY directions) of the surface of the substrate P held in the first holder HD1 of the table 4T is detected by a focus leveling detection system (not shown). The control device 7 controls the board stage drive device based on the measurement result of the laser interferometer 4L and the detection result of the focus leveling detection system, and controls the position of the board P held in the first holder HD1.
The focus leveling detection system detects the inclination information (rotation angle) of the substrate in the θX and θY directions by measuring the position information of the substrate in the Z-axis direction at each of the plurality of measurement points. Further, for example, when the laser interferometer can measure the position information in the Z-axis, θX and θY directions of the substrate, focus leveling is performed so that the position information in the Z-axis direction can be measured during the exposure operation of the substrate. It is not necessary to provide a detection system, and the position of the substrate P in the Z-axis, θX, and θY directions may be controlled using the measurement results of the laser interferometer at least during the exposure operation.
The immersion system 1 fills the optical path space K of the exposure light EL near the image plane of the projection optical system PL with the liquid LQ. For example, during the exposure of the substrate P, the immersion system 1 includes the lower surface of the final optical element FL closest to the image plane of the projection optical system PL and the final optical element FL among the plurality of optical elements of the projection optical system PL. An immersion region LR is formed on the substrate P so that the optical path space K of the exposure light EL between the surface of the substrate P on the substrate stage 4 (first holder HD1) arranged at the opposite positions is filled with the liquid LQ. Form. In this embodiment, water (pure water) is used as the liquid LQ.
The liquid immersion system 1 is provided in the vicinity of the optical path space K of the exposure light EL, and has a nozzle 12 having a supply port 12 for supplying the liquid LQ to the optical path space K and a recovery port 22 for collecting the liquid LQ. Collected from the liquid supply device 11 that supplies the liquid LQ to the supply port 12 via the member 70, the supply pipe 13, and the supply flow path formed inside the nozzle member 70, and the collection port 22 of the nozzle member 70. The liquid LQ is provided with a recovery flow path formed inside the nozzle member 70 and a liquid recovery device 21 for recovering the liquid LQ via the recovery pipe 23. In the present embodiment, the nozzle member 70 is provided in an annular shape so as to surround the optical path space K of the exposure light EL. The supply port 12 for supplying the liquid LQ is provided in the vicinity of the optical path space K of the exposure light EL. The collection port 22 for collecting the liquid LQ is provided on the lower surface of the nozzle member 70, and faces the surface of the substrate P, for example, during the exposure of the substrate P. In the present embodiment, the recovery port 22 is provided at a distance from the supply port 12 with respect to the optical path space K of the exposure light EL. Further, in the present embodiment, a porous member (mesh) is arranged at the collection port 22.
The liquid supply device 11 is provided with a temperature control device for adjusting the temperature of the liquid LQ to be supplied, a degassing device for reducing the gas component in the liquid LQ, a filter unit for removing foreign substances in the liquid LQ, and the like, and is clean. It is possible to deliver a temperature-controlled liquid LQ. Further, the liquid recovery device 21 is provided with a vacuum system or the like, and can recover the liquid LQ. The operation of the immersion system 1 including the liquid supply device 11 and the liquid recovery device 21 is controlled by the control device 7. The liquid LQ delivered from the liquid supply device 11 flows through the supply flow paths of the supply pipe 13 and the nozzle member 70, and is then supplied from the supply port 12 to the optical path space K of the exposure light EL. Further, the liquid LQ recovered from the recovery port 22 by operating the liquid recovery device 21 flows through the recovery flow path of the nozzle member 70, and then is recovered by the liquid recovery device 21 via the recovery pipe 23. The control device 7 controls the liquid immersion system 1 to perform the liquid supply operation by the liquid supply device 11 and the liquid recovery operation by the liquid recovery device 21 in parallel, thereby setting the optical path space K of the exposure light EL to the liquid LQ. The liquid LQ immersion region LR is formed on an object (for example, the substrate P) facing the terminal optical element FL so as to be filled with.
The exposure apparatus EX irradiates the exposure light EL that has passed through the mask M via the projection optical system PL and the liquid LQ filled in the optical path space K of the exposure light EL onto the substrate P held in the first holder HD1. As a result, the pattern image of the mask M is projected onto the substrate P to expose the substrate P. Further, the exposure apparatus EX of the present embodiment fills the optical path space K of the exposure light EL between the final optical element FL and the substrate P with the liquid LQ during the exposure of the substrate P, and the projection region of the projection optical system PL. A local immersion method is adopted in which the immersion region LR of the liquid LQ, which is larger than the projection region AR and smaller than the substrate P, is locally formed in a part of the region on the substrate P including the AR.
Next, the table 4T according to the present embodiment will be described with reference to FIGS. 1 to 7. FIG. 2 is a side sectional view of the table 4T in which the substrate P is held by the first holder HD1, FIG. 3 is a plan view of the table 4T in which the substrate P is held by the first holder HD1, and FIG. 4 is a plan view. Top view of the table 4T with the board P removed from the first holder HD1, FIG. 5 is a plan view of the board P and the plate member T removed from the first and second holders HD1 and HD2. 6 is an enlarged side sectional view of a part of the first holder HD1, and FIG. 7 is a plan view.
As shown in FIG. 2 and the like, the table 4T is provided on the base material 30, the first holder HD1 provided on the base material 30 and holding the substrate P detachably, and the plate member T provided on the base material 30 to attach and detach the plate member T. It is equipped with a second holder HD2 that can be held. The plate member T held by the second holder HD2 is arranged so as to surround the substrate P held by the first holder HD1.
The first holder HD1 will be described. As shown in FIGS. 2 to 7, the first holder HD1 is formed on a first support member 81 formed on the base material 30 and supporting the back surface of the substrate P, and a first support member formed on the base material 30. It has a first upper surface 31A facing the back surface of the substrate P supported by 81, and is provided so as to surround a first space 41 between the substrate P supported by the first support member 81 and the base material 30. It has a first peripheral wall 31 and a second upper surface 32A formed on the base material 30 and facing the back surface of the substrate P supported by the first support member 81, and is provided so as to surround the first peripheral wall 31. It has a 2 peripheral wall 32 and a 3rd upper surface 33A formed on the base material 30 and facing the back surface of the substrate P supported by the 1st support member 81 so as to surround the 1st support member 81 and the 2nd peripheral wall 32. Between the third peripheral wall 33 and the flow port 60 capable of supplying gas to the second space 42 between the first peripheral wall 31 and the second peripheral wall 32, and between the second peripheral wall 32 and the third peripheral wall 33. It is provided with a first suction port 61 for sucking the fluid in the third space 43 of the above.
The first peripheral wall 31 has an annular shape (substantially an annular shape) having substantially the same shape as the outer shape of the substrate P. The first upper surface 31A of the first peripheral wall 31 is provided so as to face a region relatively close to the peripheral edge of the back surface of the substrate P supported by the first support member 81. On the back surface side of the substrate P held by the first holder HD1, a first space 41 surrounded by the back surface of the substrate P, the first peripheral wall 31, and the base material 30 is formed.
The second peripheral wall 32 is formed along the first peripheral wall 31 outside the first peripheral wall 31 with respect to the first space 41. The first peripheral wall 31 and the second peripheral wall 32 are separated by a predetermined distance (for example, 1 mm). The second peripheral wall 32 also has an annular shape (substantially an annular shape) having substantially the same shape as the outer shape of the substrate P. The second upper surface 32A of the second peripheral wall 32 is provided so as to face a region relatively close to the peripheral edge of the back surface of the substrate P supported by the first support member 81. On the back surface side of the substrate P held by the first holder HD1, a second space 42 surrounded by the back surface of the substrate P, the first peripheral wall 31, the second peripheral wall 32, and the base material 30 is formed.
The third peripheral wall 33 is formed outside the first peripheral wall 31 and the second peripheral wall 32 with respect to the first space 41 by a predetermined distance from the second peripheral wall 32. The third peripheral wall 33 also has an annular shape (substantially an annular shape) having substantially the same shape as the outer shape of the substrate P. The third upper surface 33A of the third peripheral wall 33 is provided so as to face the peripheral edge region (edge region) of the back surface of the substrate P supported by the first support member 81. On the back surface side of the substrate P held by the first holder HD1, a third space 43 surrounded by the back surface of the substrate P, the second peripheral wall 32, the third peripheral wall 33, and the base material 30 is formed. As described above, the first, second, and third peripheral walls 31, 32, and 33 all face the edge region on the back surface of the substrate P supported by the first support member 81, or a region close to the edge region. It is provided as follows.
In the present embodiment, the first, second, and third peripheral walls 31, 32, and 33 are arranged so as to be substantially concentric. The first holder HD1 holds the substrate P so that the center of the first space 41 and the center of the back surface of the substrate P substantially coincide with each other.
Further, in the present embodiment, the outer diameter of the third peripheral wall 33 is smaller than the outer diameter of the substrate P. In other words, the third peripheral wall 33 is provided inside the edge of the substrate P supported by the first support member 81 (on the center side of the substrate P). A part of the edge region of the substrate P supported by the first support member 81 is overhanged by a predetermined amount on the outside of the third peripheral wall 33. In the following description, the back surface of the substrate P, over the outer side than the third wall 33 as appropriate regions Hangu overhang region H1 (see FIG. 6), referred to as. In the present embodiment, the width of the overhang region H1 is about 1.5 mm.
As shown in FIG. 6, in the present embodiment, the first gap G1 is formed between the back surface of the substrate P supported by the first holder HD1 and the first upper surface 31A of the first peripheral wall 31. Further, a second gap G2 is formed between the back surface of the substrate P supported by the first holder HD1 and the second upper surface 32A of the second peripheral wall 32. The third peripheral wall 33 is formed so that the back surface of the substrate P supported by the first holder HD1 and the third upper surface 33A are in contact with each other.
In the present embodiment, the first gap G1 is about 2 to 10 μm, and the second gap G2 is also about 2 to 10 μm. Further, in the present embodiment, the widths of the first, second, and third upper surfaces 31A, 32A, and 33A are about 0.5 mm.
The distribution port 60 is connected to the second space 42. As shown in FIGS. 4, 5, 7, and the like, in the present embodiment, the distribution port 60 surrounds the first peripheral wall 31 on the base material 30 between the first peripheral wall 31 and the second peripheral wall 32. In addition, a plurality of them are formed outside the first peripheral wall 31 at predetermined intervals in the circumferential direction. In the present embodiment, the shape of the distribution port 60 is circular, but it may be square or the like. Further, in the present embodiment, the distribution ports 60 are arranged at substantially equal intervals.
As shown in FIG. 6 and the like, the second space 42 and the external space (atmospheric space) are connected to each other via the distribution port 60. That is, gas can flow between the second space 42 and the external space via the distribution port 60 and the flow path 60R connected to the distribution port 60. The second space 42 is open to the atmosphere through the distribution port 60.
In the present embodiment, on the base material 30 between the first peripheral wall 31 and the second peripheral wall 32, an annular shape is formed along the first peripheral wall 31 outside the first peripheral wall 31 so as to surround the first peripheral wall 31. The first groove 51 of the above is formed. The distribution port 60 is formed inside the first groove 51 (at the bottom of the first groove 51).
As shown in FIGS. 1 and 6, the first suction port 61 formed between the second peripheral wall 32 and the third peripheral wall 33 of the base material 30 is the first suction device 91 including the vacuum system and the like. It is connected via the flow path 61R. Further, the first suction port 61 is connected to the third space 43. The control device 7 sucks the fluid (including at least one of gas and liquid) in the third space 43 by driving the first suction device 91.
In the present embodiment, the first suction port 61 is circumferentially outside the second peripheral wall 32 so as to surround the second peripheral wall 32 on the base material 30 between the second peripheral wall 32 and the third peripheral wall 33. A plurality of them are formed at predetermined intervals. In the present embodiment, the shape of the first suction port 61 is circular, but may be square or the like. Further, in the present embodiment, the first suction ports 61 are arranged at substantially equal intervals.
Further, in the present embodiment, on the base material 30 between the second peripheral wall 32 and the third peripheral wall 33, an annular second groove 52 is formed along the second peripheral wall 32 so as to surround the second peripheral wall 32. Is formed. The first suction port 61 is formed inside the second groove 52 (at the bottom of the second groove 52).
The first support member 81 is a pin-shaped protrusion formed on the upper surface of the base material 30, and is arranged at each of a plurality of predetermined positions on the upper surface of the base material 30. In the present embodiment, a plurality of first support members 81 are arranged inside the first peripheral wall 31. Further, a plurality of first support members 81 are arranged between the second peripheral wall 32 and the second groove 52, and between the second groove 52 and the third peripheral wall 33.
In FIGS. 4 and 5, the first support member 81 in the third space 43 is omitted for simplification. However, if sufficient flatness of the surface Pa of the substrate P can be ensured, the first support member 81 may not be provided in the third space 43.
A plurality of second suction ports 62 for sucking fluid (mainly gas) are provided on the base material 30 in order to make the first space 41 and the third space 43 a space having a negative pressure compared to the atmospheric pressure. .. The second suction port 62 is provided inside the first peripheral wall 31 and between the second peripheral wall 32 and the third peripheral wall 33. The second suction port 62 is used exclusively for sucking and holding the substrate P.
Inside the first peripheral wall 31, the second suction port 62 is formed at a plurality of predetermined positions other than the first support member 81. Further, between the second peripheral wall 32 and the third peripheral wall 33, the second suction port 62 is formed at a position farther from the first suction port 61 with respect to the second peripheral wall 32. That is, the second suction port 62 is not provided between the second peripheral wall 32 and the third peripheral wall 33 on the upper surface of the base material 30, and is not provided between the second peripheral wall 32 and the second groove 52. A plurality of two grooves 52 are provided at predetermined positions between the third peripheral wall 33 and the third peripheral wall 33.
In addition, in FIG. 2, FIG. 4, and FIG. 5, the second suction port 62 provided between the second groove 52 and the third peripheral wall 33 is omitted for simplification. However, if sufficient flatness of the surface Pa of the substrate P can be ensured only by the second suction port 62 provided inside the first peripheral wall 31 and the substrate P can be held so as not to move, the second groove 52 It is not necessary to provide the second suction port 62 between the third peripheral wall 33 and the third peripheral wall 33.
As shown in FIGS. 1 and 6, respectively, each of the second suction ports 62 is connected to the second suction device 92 including the vacuum system and the like via the flow path 62R, and the first space 41 and the third are the third. It is connected to space 43. The control device 7 can suck the fluid (including at least one of gas and liquid) in the first and third spaces 41 and 43 by operating the second suction device 92. The control device 7 operates the second suction device 92, and the gas in the first space 41 surrounded by the back surface of the substrate P, the first peripheral wall 31 and the base material 30, and the back surface of the substrate P and the second peripheral wall 32. By sucking the fluid (mainly gas) gas of the third space 43 surrounded by the third peripheral wall 33 and the base material 30, and making the first space 41 and the third space 43 a negative pressure space, the substrate P Is sucked and held on the first support member 81. Further, the substrate P can be removed from the first holder HD1 by canceling the suction operation by the second suction device 92. As described above, in the present embodiment, the substrate P can be attached to and detached from the first holder HD1 by controlling the suction operation using the second suction port 62. The first holder HD1 in this embodiment is a part of a so-called pin chuck mechanism.
Further, the table 4T has a fourth upper surface 34A formed on the base material 30 and facing the back surface of the substrate P supported by the first support member 81, and is provided so as to surround the third peripheral wall 33. It is provided with a four peripheral wall 34 and a third suction port 63 for sucking fluid in the space between the third peripheral wall 33 and the fourth peripheral wall 34. The fourth peripheral wall 34 is formed outside the third peripheral wall 33 with respect to the third space 43 at a predetermined distance from the third peripheral wall 33. The fourth peripheral wall 34 is formed along the third peripheral wall 33. The fourth peripheral wall 34 also has an annular shape (substantially an annular shape) having substantially the same shape as the outer shape of the substrate P. However, as will be described later, in the present embodiment, the fourth peripheral wall 34 is not continuously formed, but is composed of a plurality of arcuate peripheral wall portions.
The fourth upper surface 34A of the fourth peripheral wall 34 faces the overhang region H1 on the back surface of the substrate P supported by the first support member 81. In the present embodiment, a fourth gap G4 is formed between the overhang region H1 on the back surface of the substrate P supported by the first support member 81 and the fourth upper surface 34A of the fourth peripheral wall 34. In the present embodiment, the fourth gap G4 is set to, for example, about 1 to 10 μm. Further, in the present embodiment, the width of the fourth upper surface 34A is set to about 0.5 mm.
As shown in FIGS. 1 and 6, the third suction port 63 is connected to the third suction device 93 including the vacuum system and the like via the flow path 63R. Further, the third suction port 63 is connected to the fourth space 44 between the third peripheral wall 33 and the fourth peripheral wall 34. The fourth space 44 is a space surrounded by an overhang region H1 on the back surface of the substrate P, a third peripheral wall 33, a fourth peripheral wall 34, and a base material 30. The control device 7 can suck the fluid (including at least one of gas and liquid) in the fourth space 44 by operating the third suction device 93.
In the present embodiment, the third suction port 63 is circumferentially outside the third peripheral wall 33 so as to surround the third peripheral wall 33 on the base material 30 between the third peripheral wall 33 and the fourth peripheral wall 34. A plurality of them are formed at predetermined intervals. In the present embodiment, the shape of the third suction port 63 is circular, but it may be square or the like. Further, in the present embodiment, the third suction ports 63 are arranged at substantially equal intervals along the third peripheral wall 33.
Further, in the present embodiment, on the base material 30 between the third peripheral wall 33 and the fourth peripheral wall 34, along the third peripheral wall 33 outside the third peripheral wall 33 so as to surround the third peripheral wall 33. An annular third groove 53 is formed. The third suction port 63 is formed inside the third groove 53 (at the bottom of the third groove 53).
A slit 37 is formed in a part of the fourth peripheral wall 34. The slits 37 are formed at each of a plurality of predetermined positions in the circumferential direction of the fourth peripheral wall 34. In the present embodiment, the slits 37 are arranged at substantially equal intervals in the circumferential direction of the fourth peripheral wall 34.
In the present embodiment, the slit 37 is formed so as to extend in the vertical direction (Z-axis direction), and the lower end of the slit 37 reaches the base material 30. On the other hand, the upper end of the slit 37 reaches the fourth upper surface 34A of the fourth peripheral wall 34. Therefore, the fourth peripheral wall 34 in the present embodiment is a combination of a plurality of arcuate convex portions in a plan view, and by providing a plurality of the arcuate convex portions along the third peripheral wall 33, it is substantially annular as a whole. It has become.
Further, the third suction port 63 is arranged between two slits 37 adjacent to each other. In the present embodiment, two third suction ports 63 are provided between the two slits 37 adjacent to each other.
As shown in FIG. 7, each of the distribution ports 60 is arranged between two first suction ports 61 adjacent to each other. That is, the distribution port 60 and the first suction port 61 are provided at different positions in the circumferential direction. A plurality of distribution ports 60 and a plurality of distribution ports 60 so that the distribution port 60 and the first suction port 61 are not formed on the same straight line when imagining a straight line extending radially from the center of the first space 41 having a circular shape in a plan view. The positions of the first suction ports 61 are defined.
Next, the plate member T and the second holder HD2 that holds the plate member T detachably will be described. The plate member T is a member different from the table 4T and is removable from the base material 30. Further, as shown in FIG. 3 and the like, a substantially circular hole TH on which the substrate P can be arranged is formed in the center of the plate member T. The plate member T held by the second holder HD2 is arranged so as to surround the substrate P held by the first holder HD1. In the present embodiment, the surface of the plate member T held by the second holder HD2 is a flat surface having substantially the same height (flush) as the surface of the substrate P held by the first holder HD1. ing. There may be a step between the surface of the substrate P held by the first holder HD1 and the surface of the plate member T held by the second holder HD2.
A fifth gap G5 is formed between the edge (outer surface) of the substrate P held by the first holder HD1 and the inner edge (inner side surface) of the plate member T held by the second holder HD2. To. The fifth gap G5 is set to, for example, about 0.1 to 1.0 mm. Further, the outer shape of the plate member T is rectangular in a plan view, and in the present embodiment, the outer shape is substantially the same as the outer shape of the base material 30.
The plate member T has liquid repellency against liquid LQ. The plate member T is formed of, for example, a fluorine-based resin such as polytetrafluoroethylene (Teflon (registered trademark)) or a liquid-repellent material such as an acrylic resin. The plate member T may be formed of metal or the like, and the surface thereof may be coated with a liquid-repellent material such as a fluororesin.
The second holder HD2 includes a second support member 82 formed on the base material 30 and supporting the back surface of the plate member T. Further, the second holder HD2 has a fifth upper surface 35A formed on the base material 30 and facing the back surface of the plate member T supported by the second support member 82, and is provided so as to surround the fourth peripheral wall 34. It has a fifth peripheral wall 35 and a sixth upper surface 36A formed on the base material 30 and facing the back surface of the plate member T supported by the second support member 82, and is provided so as to surround the fifth peripheral wall 35. It is equipped with the 6th peripheral wall 36. The second support member 82 is formed on the base material 30 between the fifth peripheral wall 35 and the sixth peripheral wall 36.
The fifth upper surface 35A of the fifth peripheral wall 35 is provided so as to face the inner edge region (inner edge region) near the hole TH in the back surface of the plate member T supported by the second support member 82. Further, the sixth upper surface 36A of the sixth peripheral wall 36 is provided so as to face the outer edge region (outer edge region) of the back surface of the plate member T supported by the second support member 82. On the back surface side of the plate member T held by the second holder HD2, a fifth space 45 surrounded by the back surface of the plate member T, the fifth peripheral wall 35, the sixth peripheral wall 36, and the base material 30 is formed. By setting the fifth space 45 as a negative pressure space, the plate member T is supported on the second support member 82 of the second holder HD2.
In the present embodiment, the fifth peripheral wall 35 is formed so that the back surface of the plate member T supported by the second support member 82 and the fifth upper surface 35A are in contact with each other. The sixth peripheral wall 36 is formed so that the back surface of the plate member T supported by the second support member 82 and the sixth upper surface 36A are in contact with each other.
The second support member 82 is a pin-shaped protrusion formed on the upper surface of the base material 30, and is located at a plurality of predetermined positions on the upper surface of the base material 30 between the fifth peripheral wall 35 and the sixth peripheral wall 36. Have been placed.
On the base material 30 between the 5th peripheral wall 35 and the 6th peripheral wall 36, a fourth space (mainly a gas) is sucked from the 5th space 45 in order to make the 5th space 45 a negative pressure space. A suction port 64 is provided. The fourth suction port 64 is used exclusively for sucking and holding the plate member T. On the base material 30 between the fifth peripheral wall 35 and the sixth peripheral wall 36, the fourth suction port 64 is formed at a plurality of predetermined positions other than the second support member 82, respectively.
As shown in FIGS. 1 and 6, each of the fourth suction port 64 is connected to the fourth suction device 94 including the vacuum system and the like via the flow path 64R and is connected to the fifth space 45. ing. The control device 7 can suck the fluid (including at least one of gas and liquid) in the fifth space 45 by operating the fourth suction device 94. The control device 7 operates the fourth suction device 94, and the fifth space 45 surrounded by the back surface of the plate member T supported by the second support member, the fifth peripheral wall 35, the sixth peripheral wall 36, and the base material 30. The plate member T is adsorbed and fixed on the second support member 82 by sucking the fluid (mainly gas) of the above and making the fifth space 45 a negative pressure space. Further, the plate member T can be removed from the second holder HD2 by canceling the suction operation by the fourth suction device 94. As described above, in the present embodiment, the plate member T can be attached to and detached from the second holder HD2 by controlling the suction operation using the fourth suction port 64. The second holder HD2 in this embodiment is a part of a so-called pin chuck mechanism.
Further, as shown in FIG. 6 and the like, the sixth space surrounded by the overhang region H1 on the back surface of the substrate P supported by the first support member 81, the fourth peripheral wall 34, the fifth peripheral wall 35, and the base material 30. 46 is connected to an external space (atmospheric space) via a fifth gap G5 formed between a substrate P supported by the first support member 81 and a plate member T supported by the second support member 82. Has been done.
Further, as shown in FIGS. 6 and 7, the fourth space 44 is connected to the external space via the fourth gap G4, the fifth gap G5, and the slit 37. That is, the slit 37, the fourth gap G4, and the fifth gap G5 allow fluid (including at least one of gas and liquid) to flow between the fourth space 44 and the external space.
Further, a sixth gap G6 of about 1 mm is formed between the outer surface of the third peripheral wall 33 and the inner surface of the fourth peripheral wall 34. A seventh gap G7 of about 1 mm is formed between the outer surface of the fourth peripheral wall 34 and the inner surface of the fifth peripheral wall 35.
Next, the exposure operation of the exposure apparatus EX will be described together with the substrate holding operation of the table 4T. In particular, the liquid recovery operation of the table 4T will be described in detail.
The control device 7 arranges the board stage 4 at a predetermined board replacement position (loading position), and carries the board P to be exposed to the first holder HD1 of the table 4T of the board stage 4 by using the transfer device 100 (the control device 7). Load). The control device 7 drives the second suction device 92 at a predetermined timing, and makes the first space 41 and the third space 43 a negative pressure space through the second suction port 62, so that the substrate P is placed in the negative pressure space. 1 Adsorb and hold with the support member 81. Before the substrate P is held by the first holder HD1, the control device 7 drives the fourth suction device 94 to make the fifth space 45 a negative pressure space through the fourth suction port 64. Holds the plate member T in the second holder HD2.
Further, the control device 7 drives the first suction device 91 at a predetermined timing and starts the suction operation using the first suction port 61. The control device 7 executes (continues) the suction operation using the first suction port 61 while forming the immersion region LR on at least one of the surface of the substrate P and the surface of the plate member T. In the present embodiment, immediately after the substrate P is carried (loaded) into the first holder HD1, the control device 7 starts the suction operation of the second suction port 62 and at the same time performs the suction operation using the first suction port 61. The suction operation using the first suction port 61 is continued until immediately before the substrate P held by the first holder HD1 is exposed and the exposed substrate P is unloaded from the first holder HD1. The suction operation using the first suction port 61 may be started after the suction operation using the second suction port 62 is performed and the substrate P is held by the first holder HD1. The suction operation using the first suction port 61 may be started before the immersion region LR is formed on at least a part of the upper surface of the substrate P and the upper surface of the plate member T.
The control device 7 uses the immersion system 1 to form an immersion region LR of the liquid LQ on the substrate P in order to perform immersion exposure on the substrate P held by the first holder HD1. The control device 7 exposes the substrate P held in the first holder HD1 of the table 4T via the liquid LQ of the immersion region LR.
For example, when the region near the edge of the surface of the substrate P is subjected to immersion exposure, a part of the immersion region LR is formed on the plate member T outside the substrate P. That is, the immersion region LR of the liquid LQ is formed on the fifth gap G5. However, since the fifth gap G5 is set to 0.1 to 1.0 mm, the surface tension of the liquid LQ suppresses the infiltration of the liquid LQ into the fifth gap G5. Further, since the plate member T has liquid repellency, the liquid LQ is suppressed from entering the back surface side of the substrate P through the fifth gap G5. Therefore, the liquid LQ can be held under the projection optical system PL even when the region near the edge of the surface of the substrate P is exposed.
In this way, the fifth gap G5 is made smaller, and the liquid-repellent plate member T is arranged around the substrate P to suppress the infiltration of the liquid LQ from the fifth gap G5. , There is a possibility that the liquid LQ infiltrates from the fifth gap G5 formed around the substrate P due to the pressure change of the liquid LQ forming the liquid immersion region LR. Even when the liquid LQ that has entered the sixth space 46 through the fifth gap G5 has entered the fourth space 44 via the fourth gap G4 or the like, the back surface of the substrate P and the third upper surface 33A of the third peripheral wall 33 Since it is in contact with (close contact with) the liquid LQ, it is possible to prevent the liquid LQ from entering the space inside the third peripheral wall 33. Further, by providing the fourth space 44, the liquid LQ infiltrated through the gaps G5, G4 and the like can be held in the fourth space 44. In the present embodiment, the control device 7 does not perform the suction operation using the third suction port 63 at least while the substrate P is exposed. That is, the control device 7 has stopped the operation of the third suction device 93 while at least exposing the substrate P.
As described above, the table 4T of the present embodiment has a configuration in which even if the liquid LQ invades the fourth space 44, the liquid LQ does not easily infiltrate into the space inside the third peripheral wall 33. However, depending on the contact state between the back surface Pb of the substrate P and the upper surface 33A of the third peripheral wall 33, the liquid LQ may infiltrate into the space inside the third peripheral wall 33. For example, the back surface of the substrate P and the third peripheral wall 33 of the third peripheral wall 33 have irregularities in the area of contact with the third upper surface 33A of the third peripheral wall 33 of the back surface of the substrate P, or the substrate P is warped. If a gap is created between the upper surface 33A and the upper surface 33A, the liquid LQ may infiltrate the space inside the third peripheral wall 33 via the back surface of the substrate P and the third upper surface 33A of the third peripheral wall 33. .. In the present embodiment, a distribution port 60 capable of supplying gas is provided inside the third peripheral wall 33, a first suction port 61 is provided between the third peripheral wall 33 and the distribution port 60, and the first suction port 61 is provided. Since the suction operation using the above is executed, even if the liquid LQ invades the space inside the third peripheral wall 33, it is necessary to prevent the liquid LQ from invading the first space 41 and the second space 42. Can be done.
FIG. 8 is a diagram schematically showing a state when a suction operation using the first suction port 61 is being executed. As shown in FIG. 8, the suction operation of the first suction port 61 can generate a gas flow F2 from the second space 42 to the third space 43 through the second gap G2. Since the second space 42 is open to the atmosphere by the flow port 60, by executing the suction operation of the first suction port 61, gas is supplied from the external space (atmospheric space) to the second space 42 via the flow port 60. Can be supplied (inflowed) to generate a gas flow F2 from the second space 42 to the first suction port 61 of the third space 43 through the second gap G2. Since this gas flow F2 is a flow from the center of the back surface of the substrate P to the outside, a liquid is formed in the space inside the third peripheral wall 33 from between the back surface of the substrate P and the third upper surface 33A of the third peripheral wall 33. Even if the LQ invades, the gas flow F2 can prevent the liquid LQ from invading the space inside the second peripheral wall 32, that is, the first space 41 and the second space 42.
In this embodiment, the value of the second gap G2 is optimized to generate the gas flow F2 in the desired state. In the present embodiment, since the second gap G2 is 2 to 10 μm, a high-speed gas flow F2 from the second space 42 to the third space 43 can be generated.
As described above, the second gap G2 is as small as about 2 to 10 μm, and the flow rate of the gas flowing into the second space 42 to the third space 43 per unit time is optimized. Therefore, the gas flowing from the second space 42 to the third space 43 hardly hinders the negative pressure of the third space 43, and the vacuum suction operation by the first holder HD1 can be smoothly performed. That is, the second gap G2 is optimized so that the gas flow F2 in a desired state can be generated and the substrate P can be adsorbed and held by the first holder HD1.
Further, in the present embodiment, since the first gap G1 is formed between the back surface of the substrate P and the first upper surface 31A of the first peripheral wall 31, for example, the first peripheral wall 31 and the substrate P come into contact with each other. It is possible to suppress the occurrence of local deformation of the substrate P due to the above. Since the first space 41 is a negative pressure space due to the suction operation using the second suction port 62, a gas flow F1 from the second space 42 to the first space 41 via the first gap G1 is also generated. However, the first gap G1 is also optimized so that the gas flow F1 in the desired state can be generated and the substrate P can be vacuum-sucked and held by the first holder HD1.
As shown in the schematic diagram of FIG. 9, the gas supplied (inflowing) from the distribution port 60 to the second space 42 flows toward the second gap G2 while being guided by the first groove 51 and expanding in the circumferential direction. That is, the flow velocity and flow rate of the gas supplied from the distribution port 60 to the second space 42 and toward the second gap G2 are made uniform in the circumferential direction by the first groove 51.
Further, the second upper surface 32A of the second peripheral wall 32 is annular, and the second gap G2 is substantially the same in the circumferential direction of the second upper surface 32A. Therefore, the flow velocity and flow rate of the gas from the second space 42 to the third space 43 are made uniform over the entire second gap G2.
Further, as shown in the schematic view of FIG. 9, a plurality of first suction ports 61 are formed outside the second peripheral wall 32 at predetermined intervals in the circumferential direction so as to surround the second peripheral wall 32. Further, the first suction port 61 is formed in the second groove 52 formed in an annular shape so as to surround the second peripheral wall 32. The gas supplied (inflowed) from the second space 42 to the third space 43 flows toward the first suction port 61 along the second groove 52 while being guided by the second groove 52 and spreading in the circumferential direction.
In this way, the gas flow F2 from the second space 42 to the third space 43 via the second gap G2 is uniformized in the circumferential direction. In addition, a gas flow is generated along the second groove 52 toward each of the first suction ports 61. Therefore, the liquid LQ penetrates into the third space 43 inside the third peripheral wall 33 from any part between the back surface of the substrate P supported by the first support member 81 and the third upper surface 33A of the third peripheral wall 33. However, the infiltrated liquid LQ is drawn into the second groove 52 and can be recovered from the first suction port 61. As a result, it is possible to prevent the liquid LQ from reaching the space inside the second peripheral wall 32 (first space 41 and second space 42).
After the immersion exposure of the substrate P is completed and the immersion region LR on the substrate P and the plate member T disappears, the control device 7 stops the suction operation of the second suction device 92. The control device 7 stops the suction operation of the second suction device 92, continues the suction operation of the first suction device 91 for a predetermined time, and then stops the suction operation of the first suction device 91. In this way, by stopping the suction operation of the first suction device 91 after stopping the suction operation of the second suction device 92, the liquid LQ in the flow path 61R connected to the first suction device 91 flows back. Therefore, it is possible to prevent the ejection from the first suction port 61.
Further, after the exposure of the substrate P is completed, the control device 7 drives the third suction device 93 with the substrate P held by the first holder HD1 before stopping the suction operation of the second suction device 92. The suction operation using the third suction port 63 is started. The control device 7 collects the liquid LQ adhering to the overhang region H1 on the back surface of the substrate P and the liquid LQ existing in the fourth space 44 by performing a suction operation using the third suction port 63. be able to.
For example, as shown in FIG. 10, the liquid LQ infiltrated from the fifth gap G5 is likely to adhere to the overhang region H1 on the back surface of the substrate P. Alternatively, the liquid LQ that has entered the fourth space 44 through the fifth gap G5 may adhere to, for example, the outer surface of the third peripheral wall 33, the inner surface of the fourth peripheral wall 34, the upper surface of the base material 30, and the like. high. The control device 7 recovers the liquid LQ infiltrated from the fifth gap G5 by driving the third suction device 93 for a predetermined time.
When the third suction device 93 is driven, the fluid around the third suction port 63 (that is, the fluid in the fourth space 44) is sucked into the third suction port 63. The fourth gap G4 formed between the fourth upper surface 34A of the fourth peripheral wall 34 and the overhang region H1 on the back surface of the substrate P is a flow path through which gas can flow between the fourth space 44 and the external space. Is forming. As shown in FIG. 10, the third suction device 93 sucks the fluid (mainly gas) in the fourth space 44 through the third suction port 63, so that the fifth gap G5 and the fifth gap G5 from the external space (atmospheric space) and A gas flow F3 that flows into the fourth space 44 through the fourth gap G4 and toward the third suction port 63 is generated. Further, the slit 37 provided in a part of the fourth peripheral wall 34 also forms a flow path through which gas can flow between the fourth space 44 and the external space. As shown in FIG. 11, the third suction device 93 sucks the fluid (mainly gas) in the fourth space 44 through the third suction port 63, so that the fifth gap G5 and the fifth gap G5 from the external space (atmospheric space) and A gas flow F4 that flows into the fourth space 44 through the slit 37 and is directed to the third suction port 63 is generated.
The liquid LQ adhering to the overhang region H1 on the back surface of the substrate P and the liquid LQ infiltrated into the fourth space 44 due to the gas flows F3 and F4 generated by the suction operation using the third suction port 63 ( The liquid LQ) adhering to the outer surface of the third peripheral wall 33, the inner surface of the fourth peripheral wall 34, the upper surface of the base material 30, etc. moves to the third suction port 63 and is collected from the third suction port 63. To.
Further, as shown in the schematic view of FIG. 11, a plurality of third suction ports 63 are formed at predetermined intervals so as to surround the third peripheral wall 33. The third suction port 63 is formed in a third groove 53 formed in an annular shape so as to surround the third peripheral wall 33. The gas supplied (inflowed) from the slit 37 and the fourth gap G4 to the fourth space 44 is guided by the third groove 53, the outer surface of the third peripheral wall 33, and the inner surface of the fourth peripheral wall 34, and is sucked by the third suction. It flows toward mouth 63. Therefore, the liquid LQ existing in the fourth space 44 can be smoothly recovered by using the third suction port 63.
As described above, in the present embodiment, the suction operation using the third suction port 63 is performed after the exposure of the substrate P via the liquid LQ is completed. By stopping the suction operation using the third suction port 63 during exposure, vibration caused by the suction operation (liquid recovery operation) using the third suction port 63, deterioration of the flatness of the substrate P surface, etc. are suppressed. be able to. Further, the liquid LQ can be smoothly recovered by performing the suction operation using the third suction port 63 while the substrate P is held in the first holder HD1. The suction operation (liquid recovery operation) using the third suction port 63 may be performed at any time after the exposure of the substrate P is completed and before the substrate P is unloaded from the first holder HD1. If vibration, flatness of the substrate P, heat of vaporization, and the like are not a problem, a suction operation using the third suction port 63 may be performed during the exposure of the substrate P.
Further, in the present embodiment, the control device 7 stops the suction operation of the second suction device 92 during the suction operation of the third suction device 93. Further, after continuing the liquid recovery operation of the fourth space 44 using the third suction port 63 for a predetermined time, the control device 7 stops the suction operation of the first suction device 91, and then the third suction device 93. Stop the suction operation of. As a result, the inflow of liquid LQ from the fourth space 44 to the third space 43 inside the third peripheral wall 33 can be suppressed more reliably. The suction operation of the first suction device 91 and the third suction device 93 may be stopped at the same time after the liquid LQ recovery operation of the fourth space 44 is sufficiently performed, or the third suction device 93 may be stopped at the same time. After stopping the suction operation of the device 93, the suction operation of the first suction device 91 may be stopped.
After stopping all the suction operations of the first to third suction devices 91, 92, and 93, the control device 7 raises the board P with respect to the first holder HD1 by using a board elevating mechanism (not shown), and a predetermined position is obtained. At the board replacement position, the board P is unloaded (unloaded) from the first holder HD1 using the transfer device 100.
12A and 12B are diagrams showing a state in which the substrate P unloaded from the first holder HD1 is transported by the transport device 100. The transport device 100 includes an arm member 101 and a convex member 102 which is provided on the arm member 101 and has a contact surface 103 which is provided on the arm member 101 and has a contact surface 103 in contact with a predetermined region PA near the center of the back surface of the substrate P. The first space 41 of the first holder HD1 is set according to a predetermined region PA in contact with the contact surface 103 of the transport device 100 on the back surface of the substrate P. As described above, when the back surface of the substrate P is held by the first holder HD1, the suction operation of the first suction port 61 suppresses the infiltration of the liquid LQ into the first space 41 and the second space 42. Therefore, it is suppressed that the liquid LQ adheres to the predetermined region PA on the back surface of the substrate P. Therefore, by bringing the contact surface 103 of the transfer device 100 into contact with the predetermined region PA on the back surface of the substrate P, it is possible to prevent the liquid LQ from adhering to the transfer device 100.
As described above, by generating the gas flow F2 from the second space 42 toward the third space 43 through the second gap G2, it corresponds to the predetermined region PA (corresponding to the first space 41) on the back surface of the substrate P. It is possible to prevent the liquid LQ from adhering to the region). Therefore, even when the transfer device 100 comes into contact with the predetermined region PA on the back surface of the substrate P, it is possible to prevent the liquid LQ from adhering to the transfer device 100.
Further, since the liquid LQ adhering to the overhang region H1 of the substrate P is recovered by the suction operation of the third suction port 63, even while the substrate P is being conveyed after the substrate P is unloaded, the liquid LQ is collected. It is possible to prevent the liquid LQ from scattering on the transport path. Further, if necessary, a removing device capable of removing the liquid LQ adhering to the substrate P is provided on the transport path of the substrate P after being unloaded from the substrate stage 4, so that the liquid can be removed on the transport path. It is possible to suppress the scattering of LQ. In this case, the removing device may supply the liquid LQ onto the substrate P again, and then remove the liquid LQ adhering to the substrate P.
The first support member 81 is arranged not only inside the first peripheral wall 31, but also between the second peripheral wall 32 and the second groove 52, and between the second groove 52 and the third peripheral wall 33. It is possible to support the substrate P satisfactorily while suppressing warpage deformation and the like from occurring in the substrate P.
Further, in the present embodiment, in the third space 43, the second suction port 62 is not arranged between the second peripheral wall 32 and the first suction port 61 (first groove 51). As a result, the gas flowing from the second gap G2 between the second upper surface 32A of the second peripheral wall 32 and the back surface of the substrate P supported by the first support member 81 toward the first suction port 61 (first groove 51). It is possible to suppress the flow F2 from being disturbed or weakened, and to generate a gas flow F2 in a desired state. In the first holder HD1, it is desirable that the substrate P is sequentially adsorbed from the center to the outside. In this case, the second suction port 62 provided inside the first peripheral wall 31 and the second suction port provided between the second peripheral wall 32 and the third peripheral wall 33 are separated from each other (vacuum). (Pump, etc.), and after starting the suction operation using the second suction port 62 provided inside the first peripheral wall 31, the second suction provided between the second peripheral wall 32 and the third peripheral wall 33. A suction operation using the mouth 62 may be started. Alternatively, the other end of the flow path 62R having one end connected to the second suction port 62 provided between the second peripheral wall 32 and the third peripheral wall 33 is connected to the connection port provided inside the first peripheral wall 31. The suction operation of the second suction port 62 provided between the second peripheral wall 32 and the third peripheral wall 33 is performed via the second suction port 62 provided inside the first peripheral wall 31 and the connection port. You may go there.
A gas supply device including a pressurizing pump or the like may be connected to the distribution port 60, and the gas supply device may be used to actively supply gas to the second space 42 via the distribution port 60. ..
If the arrangement, number, shape, etc. of the distribution port 60 can be optimized to generate a uniform desired gas flow, the distribution port is not formed in the first groove 51 and is located at a predetermined position on the upper surface of the base material 30. 60 may be formed. Similarly, if the desired gas flow can be generated, the second groove 52 and the third groove 53 are omitted, and the first suction port 61 and the third suction port 61 are placed at predetermined positions on the upper surface of the base material 30. Mouth 63 can be formed. Further, if a large number of distribution ports 60 are provided in the circumferential direction and a gas flow F2 having a uniform flow velocity and flow rate can be formed from the distribution port 60 toward the first suction port 61, the second peripheral wall 32 may be omitted. Good.
In the above-described embodiment, the first gap G1 is formed between the first upper surface 31A of the first peripheral wall 31 and the back surface of the substrate P, but the first upper surface 31A of the first peripheral wall 31 and the substrate P are formed. It may come into contact with the back surface of P.
In addition, at least one annular peripheral wall may be further provided inside the first peripheral wall 31 so as to form a predetermined gap with the back surface of the substrate P. Since the second space 42 is open to the atmosphere, the negative pressure (adsorption force) of the first space 41 may be insufficient, but by adding at least one annular peripheral wall inside the first peripheral wall 31 , It is possible to maintain a large adsorption force in the space inside the added peripheral wall. Further, since the suction force of the space inside the added peripheral wall is larger than the suction force of the space outside, the substrate P can be stably held.
In the above-described embodiment, in order to collect the liquid LQ that has flowed into the space inside the third peripheral wall 33, the flow port (60) capable of supplying gas to the first holder HD1 and the liquid LQ that has flowed in are collected. A suction port (61) is provided, but in order to collect the liquid LQ that has entered the inside of the fifth peripheral wall 35 (the fifth space 45 on the back surface side of the plate member T), gas is supplied to the second holder HD2. A supply port and a suction port for collecting the inflowing liquid LQ may be provided.
Further, although the flat portion around the substrate P is formed of the detachable plate member T, the flat portion around the substrate P may be formed of a member integrated with the base material 30.
Further, in the projection optical system of the above-described embodiment, the optical path space on the image plane side of the final optical element is filled with a liquid. It is also possible to adopt a projection optical system in which the optical path space on the object surface side is also filled with liquid.
Although the liquid LQ of the present embodiment is water, it may be a liquid other than water. For example, the light source of the exposure light EL is F.<sub>2</sub>If it is a laser, this F<sub>2</sub>Laser light does not pass through water, so it is F as a liquid LQ.<sub>2</sub>It may be a fluorine-based fluid such as perfluoropolyether (PFPE) or a fluorine-based oil that can transmit laser light. In this case, the portion in contact with the liquid LQ is subjected to a liquefaction treatment by forming a thin film with, for example, a substance having a small polar molecular structure containing fluorine. In addition, the liquid LQ is transparent to the exposure light EL, has a high refractive index as much as possible, and is stable to the photoresist applied to the surface of the projection optical system PL and the substrate P (for example, cedar). It is also possible to use oil).
Further, as the liquid LQ, a liquid having a refractive index of about 1.6 to 1.8 may be used. Examples of the liquid LQ include isopropanol having a refractive index of about 1.50, a predetermined liquid having a CH bond or an OH bond such as glycerol (glycerin) having a refractive index of about 1.61, and a predetermined liquid (organic solvent) such as hexane, heptane, and decane. Predetermined liquids such as decalin and bicyclohexyl can be mentioned. Alternatively, any two or more kinds of liquids among these predetermined liquids may be mixed, or the predetermined liquid may be added (mixed) to pure water. Alternatively, as the liquid LQ, pure water and H<sup>+</sup>, Cs<sup>+</sup>, K<sup>+</sup>, Cl<sup>-</sup>, SO<sub>4</sub><sup>2-</sup>, PO<sub>4</sub><sup>2-</sup>It may be the one to which the base or acid of the above is added (mixed). Further, fine particles such as Al oxide may be added (mixed) to pure water. These liquid LQs are capable of transmitting ArF excimer laser light. Further, as a liquid LQ, the light absorption coefficient is small, the temperature dependence is small, and the photosensitive material (or protective film (top coat film) or antireflection film) coated on the surface of the projection optical system PL and / or the substrate P is antireflection. It is preferable that it is stable to a film or the like.
The optical element LS1 can be formed of, for example, quartz (silica). Alternatively, calcium fluoride (fluorite), barium fluoride, strontium fluoride, lithium fluoride, sodium fluoride, and BaLiF<sub>3</sub>It may be formed of a single crystal material of a fluorinated compound such as. Further, the final optical element may be made of lutetium aluminum garnet (LuAG). And may be formed of a single crystal material of a fluorinated compound such as sodium fluoride.
At least one optical element of the projection optics may be made of a material having a higher refractive index than quartz and / or fluorite (eg 1.6 or higher). For example, sapphire, germanium dioxide, etc. as disclosed in Pamphlet 2005/059617, or potassium chloride (refractive index about 1.75) as disclosed in Pamphlet 2005/059618. Etc. can be used.
The substrate P of each of the above embodiments is not only a semiconductor wafer for manufacturing a semiconductor device, but also a glass substrate for a display device, a ceramic wafer for a thin film magnetic head, or an original plate of a mask or reticle used in an exposure apparatus. (Synthetic quartz, silicon wafer) etc. are applied. The shape of the substrate is not limited to a circular shape, and may be another shape such as a rectangle.
The exposure device EX may be applied to a step-and-scan scanning exposure device (scanning stepper) in which the mask M and the substrate P are synchronously moved to scan and expose the pattern of the mask M, or the mask M may be applied. It can also be applied to a step-and-repeat type projection exposure device (stepper) in which the pattern of the mask M is collectively exposed while the substrate P and the substrate P are stationary, and the substrate P is sequentially moved step by step.
Further, as the exposure apparatus EX, a reduced image of the first pattern is projected in a state where the first pattern and the substrate P are almost stationary (for example, a refraction type projection optical system that does not include a reflecting element at a 1/8 reduction magnification). It can also be applied to an exposure apparatus of a method of batch exposure on a substrate P using the above. In this case, after that, the reduced image of the second pattern is partially overlapped with the first pattern by using the projection optical system in a state where the second pattern and the substrate P are almost stationary, and a batch exposure is performed on the substrate P. It can also be applied to a stitch-type batch exposure device. Further, as the stitch type exposure apparatus, it can be applied to a step-and-stitch type exposure apparatus in which at least two patterns are partially overlapped and transferred on the substrate P and the substrate P is sequentially moved.
The present invention also relates to Japanese Patent Application Laid-Open No. 10-163099, Japanese Patent Application Laid-Open No. 10-214783, Japanese Patent Application Laid-Open No. 2000-505958, US Pat. No. 6,341,007, US Pat. No. 6,400,441, US Pat. No. 6,549,269, and US Pat. No. 6,590,634. , US Pat. No. 6,208,407, US Pat. No. 6,262,796, etc., can also be applied to a multi-stage exposure apparatus having a plurality of substrate stages.
Further, as disclosed in JP-A-11-135400, JP-A-2000-164504, US Pat. No. 6,897,963, etc., a substrate stage for holding a substrate, a reference member on which a reference mark is formed, and various photoelectrics are formed. The present invention can also be applied to an exposure apparatus provided with a measurement stage equipped with a sensor.
In each of the above embodiments, the position information of the mask stage and the substrate stage is measured by using an interferometer system, but the present invention is not limited to this, and for example, an encoder system that detects a scale (diffraction grating) provided on the upper surface of the substrate stage. May be used. In this case, it is preferable to use a hybrid system including both an interferometer system and an encoder system, and to calibrate the measurement result of the encoder system using the measurement result of the interferometer system. Further, the position of the substrate stage may be controlled by switching between the interferometer system and the encoder system, or by using both of them.
In each of the above embodiments, an exposure apparatus including a projection optical system having a plurality of optical elements has been described as an example, but a projection optical system composed of one optical element may be used. Alternatively, the present invention can be applied to an exposure apparatus and an exposure method that do not use a projection optical system. Even when the projection optical system is not used, the exposure light is applied to the substrate through an optical member such as a mask or a lens, and an immersion region is formed in a predetermined space between the optical member and the substrate. To.
The type of the exposure device EX is not limited to the exposure device for manufacturing a semiconductor element that exposes the semiconductor element pattern on the substrate P, but is also an exposure device for manufacturing a liquid crystal display element or a display, a thin film magnetic head, and an image pickup device (CCD). , Micromachines, MEMS, DNA chips, or exposure devices for manufacturing reticle or masks.
In the above-described embodiment, a light-transmitting mask in which a predetermined light-shielding pattern (or phase pattern / dimming pattern) is formed on a light-transmitting substrate is used. Instead of this mask, for example, a US patent As disclosed in Japanese Patent Application Laid-Open No. 6,778,257, an electronic mask (also called a variable molding mask) that forms a transmission pattern, a reflection pattern, or a light emission pattern based on electronic data of a pattern to be exposed, for example, a non-light emission type image display. A DMD (Digital Micro-mirror Device) or the like, which is a kind of element (spatial light modulator), may be used.
Further, for example, as disclosed in Pamphlet No. 2001/035168, an exposure apparatus (lithographic system) that exposes a line-and-space pattern on a substrate P by forming interference fringes on the substrate P. ) Also the present invention can be applied.
Further, for example, as disclosed in Japanese Patent Application Laid-Open No. 2004-519850 (corresponding US Pat. No. 6,611,316), two mask patterns are combined on a substrate via a projection optical system, and one scan exposure is performed. The present invention can also be applied to an exposure apparatus that double-exposes one shot area on a substrate at almost the same time.
To the extent permitted by law, the disclosure of references related to exposure equipment, etc. shall be incorporated as part of the description in the main text.
As described above, the exposure apparatus EX is manufactured by assembling various subsystems including each component so as to maintain predetermined mechanical accuracy, electrical accuracy, and optical accuracy. In order to ensure these various accuracy, before and after this assembly, adjustments for achieving optical accuracy for various optical systems, adjustments for achieving mechanical accuracy for various mechanical systems, and various electrical systems Is adjusted to achieve electrical accuracy. The assembly process from the various subsystems to the exposure apparatus includes mechanical connections between the various subsystems, wiring connections of electric circuits, piping connections of atmospheric pressure circuits, and the like. It goes without saying that there is an individual assembly process for each subsystem before the assembly process from the various subsystems to the exposure apparatus. After the process of assembling the various subsystems into the exposure device is completed, comprehensive adjustment is performed to ensure various accuracy of the exposure device as a whole. It is desirable that the exposure device is manufactured in a clean room where the temperature, cleanliness, etc. are controlled.
As shown in FIG. 13, for microdevices such as semiconductor devices, step 201 for designing the function and performance of the microdevice, step 202 for manufacturing a mask (reticle) based on this design step, and a substrate which is a base material of the device. Step 203, a step of exposing the mask pattern to the substrate by the exposure apparatus EX of the above-described embodiment, a step of developing the exposed substrate, a substrate processing process such as heating (cure) and etching of the developed substrate. Manufactured through step 204 including, device assembly step (including dicing step, bonding step, packaging step) 205, inspection step 206 and the like.
14 sheets
Sheet 1 Sheet 2 Sheet 3 Sheet 4 Sheet 5 Sheet 6 Sheet 7 Sheet 8 Sheet 9 Sheet 10 Sheet 11 Sheet 12 Sheet 13 Sheet 14
Every citation, both ways
| Document | Relation | Office | Cited during |
|---|---|---|---|
| WO2004112108A1 | Cites | World Intellectual Property Organization (WIPO) | Examiner |
| JP2005175016A | Cites | Japan | Examiner |
| JP2005310933A | Cites | Japan | Examiner |
| WO2006077859A1 | Cites | World Intellectual Property Organization (WIPO) | Examiner |
| JP2005175016A | Cites | Japan | – |
| WO2004112108A1 | Cites | World Intellectual Property Organization (WIPO) | – |
| JP2005310933A | Cites | Japan | – |
| WO2006077859A1 | Cites | World Intellectual Property Organization (WIPO) | – |
24 members in 7 offices
Priority claims3
| Document | Office | Kind | Date |
|---|---|---|---|
| 2005354463 | Japan | – | |
| 2005354463 | Japan | A | |
| 2006324552 | Japan | W |
Members24
| Document | Office | Kind | |
|---|---|---|---|
| WO2007066758A1 | World Intellectual Property Organization (WIPO) | A1 | |
| TW200737298A | Taiwan Province of China | A | |
| KR20080075906A | Republic of Korea | A | |
| EP1962329A1 | European Patent Office (EPO) | A1 | |
| US2008239275A1 | United States of America | A1 | |
| JPWO2007066758A1 | Japan | A1 | |
| HK1123627A1 | Hong Kong, China | A1 | |
| EP1962329A4 | European Patent Office (EPO) | A4 | |
| US8089615B2 | United States of America | B2 | |
| JP4968076B2This record | Japan | B2 | |
| TWI406321B | Taiwan Province of China | B | |
| KR20130105920A | Republic of Korea | A | |
| TW201342427A | Taiwan Province of China | A | |
| KR101340138B1 | Republic of Korea | B1 | |
| EP1962329B1 | European Patent Office (EPO) | B1 | |
| EP2768016A1 | European Patent Office (EPO) | A1 | |
| KR20150023915A | Republic of Korea | A | |
| HK1199771A | Hong Kong, China | A | |
| HK1199771A1 | Hong Kong, China | A1 | |
| KR101539517B1 | Republic of Korea | B1 | |
| TWI538014B | Taiwan Province of China | B | |
| KR101704310B1 | Republic of Korea | B1 | |
| EP2768016B1 | European Patent Office (EPO) | B1 | |
| EP3327759A1 | European Patent Office (EPO) | A1 |
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Numbers
- Publication
- 4968076
- Application
- 2007549191
Titles2
- Japanese
- 基板保持装置、露光装置、露光方法、及びデバイス製造方法
- English
- Substrate holding device, exposure device, exposure method, and device manufacturing method
Classification
- CPC, 7
- H10P72/7614
- G03F7/70341
- G03F7/707
- G03F7/70875
- Y10T279/11
- H10P72/7604
- H10P72/7611
- IPC, 2
- H01L21 027
- H10P72 76
