Apparatus of manufacturing semiconductor apparatus, and method of manufacturing semiconductor apparatus

The present invention relates to a manufacturing apparatus for a semiconductor device having a circuit composed of a thin film transistor (hereinafter referred to as TFT) and a method for manufacturing the semiconductor device. For example, the present invention relates to an electronic device equipped with an electro-optical device represented by a liquid crystal display panel or a light emitting display device having an organic light emitting element as a component.

In the present specification, the semiconductor device refers to all devices that can function by utilizing the semiconductor characteristics, and the electro-optical device, the semiconductor circuit, and the electronic device are all semiconductor devices.

In recent years, attention has been focused on a technique for forming a thin film transistor (TFT) using a semiconductor thin film (thickness of several to several hundred nm) formed on a substrate having an insulating surface. Thin film transistors are widely applied to electronic devices such as ICs and electro-optical devices, and their development is urgently needed, especially as switching elements for image display devices.

Generally, a lithography technique is used for processing a thin film formed on a substrate having an insulating surface. The process using the lithography technology processes a thin film through a series of processes such as a resist coating process, a resist exposure process using a photomask, a resist developing process, an etching process using a resist pattern, and a resist removing process. .. Therefore, the process using the lithography technique occupies a lot of processes and time, which causes an increase in manufacturing cost. For example, when manufacturing a TFT or the like using amorphous silicon, the process using lithography technology is performed five times, and five different photomasks are required.

Further, the photomask used in the lithography technology uses a translucent base material having a small coefficient of linear expansion and a small change due to humidity, specifically glass or quartz, and is fine on the translucent base material. The mask pattern is made of a light-shielding material. Although a highly accurate resist pattern can be realized by exposure using this photomask, there is a problem that the manufacturing cost of the photomask is very high. Since it takes a long time to manufacture a photomask, it is disadvantageous in a field where a short product development cycle is desired. In addition, conventional photomasks can only form one type of pattern. Further, even if it is desired to slightly change the photomask design, it is difficult to shorten the number of days required for manufacturing the photomask.

Further, in mass production of semiconductor devices, a method of reducing the manufacturing cost by increasing the substrate area is adopted. However, if the size of the photomask is increased, the cost of manufacturing the photomask becomes high.

In addition, the reduction projection exposure device (stepper) is also a very expensive device, and the larger the size, the more expensive it becomes. When a large-area substrate is used, a complicated optical system is required, and the foot occupied by the exposure device. Prints will also increase.

Further, in the resist coating step and the resist developing step, a large amount of waste liquid is generated during these steps. It is necessary to install piping for transporting a large amount of waste liquid generated in this way and a tank for storing it. In addition, since resist materials are easily deteriorated, it is difficult to control the quality of materials that always use fresh resist materials in the process.

In this way, in mass production of semiconductor devices, even if an attempt is made to reduce the manufacturing cost by increasing the substrate area, if the lithography technology is used in the manufacturing process, the capital investment amount will increase. There is a problem that the number increases.

The applicant has patented Patent Document 1, Patent Document 2, and Patent Document 1, and Patent Document 2, and Patent Document 1, a thin film processing method for forming an open groove by irradiating a translucent conductive film with a linear beam using a laser beam having a wavelength of 400 nm or less. It is described in Reference 3.<patcit num="1"><text>U.S. Pat. No. 4861964</text></patcit><patcit num="2"><text>U.S. Pat. No. 5,708,252</text></patcit><patcit num="3"><text>U.S. Pat. No. 6,149,988</text></patcit>

<p>The present invention provides a semiconductor device manufacturing device that does not use a stepper in the manufacturing process when mass-producing semiconductor devices using a substrate having a large area. Further, the present invention provides a semiconductor device manufacturing device capable of reducing the number of devices for mass production and reducing the footprint. Further, the present invention provides a semiconductor device manufacturing apparatus capable of processing a thin film without using a resist material.</p>

<p>The thin film is partially formed by selectively irradiating the thin film formed on the substrate having an insulating surface with laser light via an optical control means, specifically, an electro-optical device to generate ablation. The thin film in the region removed and left is formed into a desired shape. An electro-optic device arranged on an optical path between a light source of laser light and a substrate having an insulating surface functions as an optical shutter or an optical reflector. In the manufacturing method disclosed in the present specification, a first material layer and a second material layer are laminated on a substrate in this order, a rectangular or linear laser beam is passed through an electro-optic device, and the first material layer or the above is described. By selectively scanning the second material layer with laser light and ablating the first material layer or the second material layer, the second material layer can be removed, or the first material layer and the first material layer can be removed. This is a method for manufacturing a semiconductor device that selectively removes the second material layer. During the scanning of the laser beam, the position through which the light passes in the electro-optical device is changed a plurality of times. When three layers are used, the first material layer, the second material layer, and the third material layer are laminated in this order on the substrate, and a rectangular or linear laser beam is passed through the electro-optical device to pass the first material layer. , The second material layer or the third material layer is selectively scanned with a laser beam and irradiated with a laser beam to ablate the second material layer, thereby causing the second material layer and the third material layer. This is a method for manufacturing a semiconductor device that removes the third material layer, or removes the first material layer, the second material layer, and the third material layer.</p><p>The manufacturing apparatus of the present invention controls a light source of laser light, an optical system that forms laser light into a rectangular beam, an electro-optical device that functions as an optical shutter or an optical reflector, means for holding a substrate (for example, a stage), and control. It has at least a device. In order to obtain a laser beam having an intensity for ablating a thin film, it is preferable to use a rectangular or linear beam that is easier to collect than a large area planar beam that irradiates the entire surface of the substrate at once. The intensity of the laser beam that ablate the thin film is 1 μJ / cm.²~ 100J / cm²It may be within the energy density range of. It is preferable that the length of the rectangular beam or the linear beam in the longitudinal direction is equal to or longer than one side of the substrate because the scanning path for processing the entire surface of the substrate can be simplified. However, when processing a high-definition thin film in consideration of the magnitude of aberration in the optical system, the length of the rectangular beam in the longitudinal direction should be short, and if the strength to ablate the thin film can be secured, it will be square. Is preferable.</p><p>Laser light sources include gas lasers such as Ar laser, Kr laser, and excimer laser, single crystal YAG, and YVO.₄, Forsterite (Mg₂SiO₄), YAlO₃, GdVO₄Or polycrystalline (ceramic) YAG, Y₂O₃, YVO₄, YAlO₃, GdVO₄Lasers, glass lasers, ruby lasers, Alexandrite lasers, Ti: sapphire lasers that use one or more of Nd, Yb, Cr, Ti, Ho, Er, Tm, and Ta as a dopant as a medium. , Copper vapor laser or gold vapor laser, which is oscillated from one or more kinds can be used. In particular, the laser beam emitted from a pulsed laser that oscillates with a pulse width of 1 femtosecond to 10 picoseconds produces high-intensity laser light, produces a nonlinear optical effect (multiphoton absorption), and improves translucency. The material layer to have can also be ablated. When using a laser beam emitted from a pulse laser that oscillates with a pulse width of 1 femtosecond to 10 picoseconds, 1 μJ / cm²~ 1mJ / cm²Even so, ablation can be sufficiently generated. Further, using a solid-state laser in which the laser medium is a solid has an advantage that a maintenance-free state can be maintained for a long time and an advantage that the output is relatively stable.</p><p>Further, the control device has a storage unit (RAM, ROM, etc.) for storing the design data of the semiconductor device, a microprocessor including a CPU, etc., and inputs an electric signal based on the design CAD data of the semiconductor device to the electro-optical device. By doing so, the position of the thin film surface where the laser beam passes through the electro-optical device and is irradiated is controlled. For example, when moving the stage on which the substrate to be processed is fixed, the emission timing of the light source of the laser beam, the electric signal input to the electro-optical device, and the moving speed of the stage are synchronized.</p><p>Further, the electro-optical device functions as a variable mask by inputting an electric signal based on the design CAD data of the semiconductor device. By changing the electrical signal input to the electro-optical device that serves as the optical shutter, it is possible to change the processing pattern of the thin film. As such an electro-optical device, an element capable of selectively adjusting the area through which light is transmitted, for example, an element having a liquid crystal material or an electrochromic material, or an element capable of selectively adjusting light reflection, for example, a digital micromirror device. (Also called DMD). A DMD is a type of spatial light modulator, which is a device in which a plurality of small mirrors called micromirrors that rotate around a fixed axis due to an electrostatic field action or the like are arranged in a matrix on a semiconductor substrate such as Si. The DMD can spatially modulate the laser beam.</p><p>Further, as another electro-optical device, a PLZT element, which is an optical element that modulates transmitted light by an electro-optical effect, can be used. The PLZT element is an oxide ceramic containing lead, lantern, zirconate, and titanium, and is a device called PLZT from the acronym of each element symbol. The PLZT element is a transparent ceramic that transmits light, but when a voltage is applied, the direction of light deflection can be changed, and when combined with a polarizer, an optical control device is constructed. The PLZT elements are arranged in a matrix to form an electro-optical device provided with electrodes and switching elements so that a voltage can be applied to each, and the area through which the laser light passes is controlled by an electro-optical effect. The PLZT device can also spatially modulate the laser beam.</p><p>Further, in the electro-optical device, the region through which the beam can pass has the same shape as or smaller than that of the substrate to be processed. In the electro-optical device, when the region through which the beam can pass is the same as that of the substrate to be processed, the substrate to be processed and the electro-optic device are aligned and the laser beam is scanned while the respective positions are fixed. In this case, the electric signal input to the electro-optical device is once in one thin film processing.</p><p>In order to reduce the size of the manufacturing apparatus, the electro-optical apparatus may be formed into an elongated rectangle through which at least a rectangular beam can pass or be reflected. For example, when an elongated DMD is used, the number of micromirrors that control the angle of reflection can be reduced, so that the modulation speed can be increased. In the processing of one thin film, the number of times the electric signal input to the DMD is changed is a plurality of times, and the position where the light is reflected in the digital micromirror device is changed a plurality of times during the scanning of the laser light. Further, even when an elongated liquid crystal optical shutter is used, the number of scanning lines and signal lines is reduced and the driving speed can be increased, so that the same effect can be obtained. Further, when the electro-optical device is an elongated rectangular shape, the number of times the electric signal input to the electro-optical device is changed is set to a plurality of times in one processing for a thin film, and the light in the electro-optical device is changed during scanning of the laser beam. Change the passing position multiple times. The thin film is continuously processed by sequentially changing the electric signal input to the electro-optical device so as to be synchronized with the scanning of the rectangular beam. In the rectangular beam scanning method, for example, the laser light source is fixed, the optical system in which the shape of the laser beam passing or reflected in the electro-optical device is rectangular is also fixed, and the substrate stage is set in the direction perpendicular to the longitudinal direction of the irradiation region. Move.</p><p>Further, instead of the stage for holding the substrate, the substrate may be moved by a method of blowing gas to float the substrate. As large-area board sizes, 590 mm x 670 mm, 600 mm x 720 mm, 650 mm x 830 mm are used in the production line, and it is estimated that 680 mm x 880 mm, 730 mm x 920 mm, or larger sizes will be used. To. When a glass substrate having a side of more than 1 m is used, it is preferable to move the substrate by a transport method capable of reducing the bending due to the weight of the substrate, for example, a method of blowing gas to float the substrate. The method of blowing a gas to float the substrate can also reduce the damage to the substrate due to excessive heating by cooling the substrate with the sprayed gas.</p><p>Further, a plurality of electro-optical devices may be arranged on the optical path between the light source of the laser light and the substrate having an insulating surface, and further fine processing may be performed.</p><p>Further, when processing a large-area substrate, the processing time may be shortened by using a plurality of the electro-optic devices and the laser light sources for one substrate. For example, when two electro-optic devices and two laser light sources are used, one is in charge of processing the thin film on one half of one substrate, and the other is in charge of processing the thin film. Finally, the processing of the thin film on the entire surface of the substrate may be completed. Since the control device can share the data designed by the CAD device, it can be one control device for a plurality of laser light sources. In particular, a configuration in which a plurality of laser light sources are used is effective when a thin film corresponding to most of the area of the entire substrate is removed by ablation of laser light.</p><p>Further, it is preferable to install a position alignment means that is electrically connected to the control device. The alignment of the irradiation position can be performed with high accuracy by installing an image sensor such as a CCD camera and performing laser irradiation based on the data obtained from the image sensor. Further, the position marker can be formed by irradiating a desired position with a laser beam in the present manufacturing apparatus.</p><p>Further, when dust is generated by laser ablation, it is preferable to further install a blowing means or a dust vacuuming means for preventing the dust from adhering to the surface of the substrate to be processed in the manufacturing apparatus. By performing laser ablation and simultaneously blowing or vacuuming the dust, it is possible to prevent the dust from adhering to the surface of the substrate to be processed. Further, it is also possible to cool the substrate by performing laser ablation and simultaneously blowing or vacuuming dust to reduce damage to the substrate due to excessive heating.</p><p>The configuration of the invention disclosed in the present specification selects a light source unit that emits a laser beam, an optical system that forms the laser beam into a rectangular or linear laser beam, and the rectangular or linear laser beam. The laser beam that has a light control means that controls light shielding and a scanning means that scans the laser beam that has passed through the light control means onto the surface of the irradiated object, and the laser beam that has passed through the light control means is irradiated. A manufacturing device that removes an illuminated area of the body. This configuration solves at least one of the above-mentioned problems.</p><p>In the above configuration, the optical control means can use an electro-optic device, a so-called optical shutter, that switches between a light-shielding portion and a light-transmitting portion of the light control means with an input electric signal. However, it is not always necessary to completely block the laser beam at the light-shielding portion of the light control means, and even if the laser beam that has passed through the light-shielding portion of the light control means irradiates the irradiated surface, ablation of the irradiated area does not occur. It suffices if the light intensity can be reduced. A liquid crystal element is mentioned as a typical optical shutter. Further, in order to allow the laser beam to pass through, it is preferable to use a liquid crystal element capable of withstanding the passage of the laser beam.</p><p>Further, in the above configuration, the optical control means can use an electro-optical device that switches between a deflection portion and a light transmission portion of the optical control means with an input electric signal. Examples of this electro-optical device include PLZT elements arranged in a matrix. Since the PLZT element is an oxide ceramic, it has high heat resistance and can withstand the passage of a laser beam, so that it can be said to be an optical control means suitable for the present invention.</p><p> Further, the configuration of another invention selectively comprises a light source unit that emits a laser beam, an optical system that forms the laser beam into a rectangular or linear laser beam, and the rectangular or linear laser beam. It has a light control means for reflection control and a scanning means for scanning a laser beam reflected from the light control means on the surface of the irradiated object, and the laser beam reflected by the light control means is the irradiated object. It is a manufacturing device that removes the irradiated area. This configuration solves at least one of the above-mentioned problems.</p><p>In the above configuration, the optical control means can use an element that switches the reflection direction of the optical control means with an input electric signal, that is, a so-called DMD. Further, in order to reflect the laser beam, it is preferable to use a micromirror capable of withstanding the irradiation of the laser beam.</p><p>Further, in each of the above configurations, a control device for controlling the light source unit and the light control means may be further provided. The light source unit and the control device that controls the light control means can synchronize the two, and it is possible to prevent the light source unit from damaging the light control means due to the laser beam emitted from the light source unit.</p><p>Further, in each of the above configurations, a control device for controlling a light source unit, an optical control means, and a scanning means may be further provided. Each can be synchronized by a light source unit, an optical control means, and a control device that controls the scanning means. The laser beam can be efficiently scanned by the light source unit, the light control means, and the control device that controls the scanning means to perform ablation in a desired region.</p><p>Further, in each of the above configurations, if the longitudinal direction of the rectangular or linear laser beam is set to be orthogonal to the scanning direction by the scanning means, a band-shaped irradiation region can be formed, and the entire irradiated surface can be formed. The laser beam can be scanned collectively or dividedly.</p><p>Further, the irradiated body is also characterized, and the irradiated body is a laminate in which the first material layer and the second material layer formed on the substrate are laminated in this order, and the first material layer is irradiated with a laser beam. Alternatively, by ablating the second material layer, the second material layer is removed, or the first material layer and the second material layer are removed. Alternatively, the irradiated body is a laminate in which the first material layer, the second material layer, and the third material layer are laminated in this order formed on the substrate, and the second material layer is ablated by irradiating the laser beam. This removes the second material layer and the third material layer, or removes the first material layer, the second material layer, and the third material layer. When the three material layers are to be irradiated, the first material layer, the second material layer, and the third material layer are laminated in this order on the substrate, and a rectangular or linear laser beam is passed through the electro-optical device. , The first material layer, the second material layer, or the third material layer is selectively scanned with a laser beam, and a laser beam is irradiated to ablate the second material layer. It is a method for manufacturing a semiconductor device that removes the second material layer and the third material layer, or removes the first material layer, the second material layer, and the third material layer.</p><p>The substrate is a translucent substrate, for example, a glass substrate or a quartz substrate. In particular, if a substrate having a large area, specifically, a substrate having a side of more than 1 m is used, it is useful for mass production.</p><p>The phenomenon in which the irradiated area of the irradiated body is removed by irradiating the laser beam is called ablation, and the process of performing the action is called ablation process.</p><p>In the present specification, ablation means sublimation in which the material layer in and around the irradiation region changes from a solid state to a gaseous state by irradiation with a laser beam, and the material layer is in a gaseous state from a solid state via a liquid state. Includes both changing evaporation and. The material of the material layer to be irradiated with the laser beam determines whether the ablation is sublimation or evaporation.</p>

<p>According to the present invention, the labor of producing a photomask can be saved, and a thin film can be processed without using a resist material.</p><p>Further, since the optical control means can be controlled using the data designed by the CAD apparatus, the desired thin film processing can be performed with high accuracy and at low cost.</p>

(Embodiment 1) Embodiments of the present invention will be described below.

FIG. 1 is a perspective view showing an example of the manufacturing apparatus of the present invention. The emitted laser light is output from the laser oscillator 103 (YAG laser device, excimer laser device, etc.), and has a first optical system 104 for making the beam shape rectangular and a second optical system for shaping. After passing through 105 and a third optical system 106 for making parallel rays, the reflection mirror 107 bends the optical path in a direction perpendicular to the substrate 100. After that, the laser beam is passed through an electro-optic device 108 that selectively adjusts the area and position of light transmission to irradiate the irradiated surface.

The electro-optical device 108 adjusts the area and position through which the laser beam is transmitted by a control device 116 such as a computer. By changing the electric signal input to the electro-optical device 108, the area and position through which the laser beam is transmitted are changed, and the area to be ablated is controlled. However, the electro-optical device 108 uses a device that can withstand the laser beam even if it is passed through the laser beam.

In order to reduce the size of the manufacturing apparatus, in FIG. 1, the electro-optic device 108 has a rectangular shape that is almost the same as the laser beam and has a size smaller than that of the substrate 100. It may be the same size.

Further, the shape of the laser spot to be irradiated on the irradiation surface is preferably rectangular or linear, specifically, if the short side is 1 mm to 5 mm and the long side is 10 mm to 50 mm. Good. When using an excimer laser with a pulse width of several tens of ns, the appropriate range is 1 J / cm.²~ 10J / cm²It may be within the energy density range of. Also, when using a continuous oscillation laser, 100 J / cm in about 1 ms.²Since the energy density of can be obtained, it is necessary to set the conditions appropriately. If a laser spot with less aberration is desired, a square of 5 mm × 5 mm to 50 mm × 50 mm may be used. When a large-area substrate is used, the long side of the laser spot is preferably 20 cm to 100 cm in order to shorten the processing time. Further, a plurality of laser oscillators and optical systems shown in FIG. 1 may be installed to process a large-area substrate in a short time. Specifically, two electro-optical devices may be installed above the substrate stage, and laser beams may be irradiated from the corresponding laser oscillators to share the processing area of one substrate.

Note that FIG. 1 is an example, and the positional relationship of each optical system and electro-optical device arranged in the optical path of the laser beam is not particularly limited. For example, if the laser oscillator 103 is arranged above the substrate 100 and the laser light emitted from the laser oscillator 103 is arranged so as to be perpendicular to the substrate surface, the reflection mirror may not be used. Further, each optical system may use a condenser lens, a beam expander, a homogenizer, a polarizer, or the like, and these may be combined. Further, slits may be combined as each optical system.

A large area of the substrate is irradiated by scanning the irradiation area of the laser beam two-dimensionally and appropriately on the irradiated surface. The irradiation region of the laser beam and the substrate are relatively moved for scanning. Here, scanning is performed by a moving means (not shown) that moves the substrate stage 109 holding the substrate in the XY directions.

Further, it is preferable that the control device 116 is interlocked so that the moving means for moving the substrate stage 109 in the XY direction can also be controlled. Further, it is preferable that the control device 116 is interlocked so that the laser oscillator 103 can also be controlled. Further, it is preferable that the control device 116 is interlocked with a position alignment mechanism for recognizing the position marker.

The irradiated body to be irradiated with the laser is a laminate in which the first material layer 101, the second material layer 114, and the third material layer 115 are laminated in this order formed on the substrate 100, and irradiates the laser beam. By ablating the second material layer 114, the second material layer 114 and the third material layer 115 are removed, or the first material layer 101, the second material layer 114, and the third material layer 115 are removed. .. The second material layer 114 is a material that is more likely to ablate than the first material layer 101 and the third material layer 115, for example, a material having a lower boiling point or sublimation point, or a material that is more likely to generate gas.

Further, it is preferable to use a heat-resistant metal for the first material layer 101, and for example, tungsten or tantalum is used. For the second material layer, chromium (boiling point 2672 ° C) or aluminum (boiling point 2467 ° C), which are materials having a relatively low boiling point and sublimation point, are used. Further, as the third material layer, an inorganic insulating film, for example, a silicon oxide film, a silicon nitride film, or the like is used.

Further, when the substrate 100 is not easily damaged by the laser beam or when the energy density of the laser beam can be reduced, the irradiated body is not limited to the three layers, and may be two layers.

Here, FIGS. 2 (A), 2 (B), and 2 (C) show the state before and after the laser ablation treatment when the irradiated body has two layers.

FIG. 2 (A) is a perspective view showing a state before the laser ablation process.

The electro-optical device 208 is arranged above the substrate stage, and the substrate 200 is installed on the substrate stage 209. The electro-optical device 208 of FIG. 2 (A) corresponds to the electro-optic device 108 of FIG. 1, and the optical system and the laser oscillating device are not shown in FIG. 2 (A) for simplification.

On the substrate 200, a first material layer 201 made of an amorphous silicon film containing hydrogen and a second material layer 202 made of a silicon oxide film are continuously laminated and formed by using the PCVD method.

First, after the position alignment between the substrate and the laser beam is performed, the laminated substrate 200 is moved in the scanning direction 210 indicated by the arrow in FIG. 2 (A). The area 211 shown by the dotted line in FIG. 2 (A) indicates the position of the stacking pattern to be retained after laser ablation, and this data is stored in the control device connected to the electro-optical device. There is.

Next, the laser beam 212 is scanned, and the electro-optical device 208 selectively performs the laser ablation process. FIG. 2B is a diagram showing a perspective view during the laser ablation process. Here, an example is shown in which a linear laser beam is used to process the substrates collectively, and the long side of the laser beam is approximately the same size as one side of the substrate. When the amorphous silicon film containing hydrogen is irradiated with laser light, ablation is likely to occur due to degasification, and the second material layer 202 on the ablation is also removed at the same time. The laser beam 212 transmitted through the transmission portion of the electro-optical device 208 removes the stacking, and the light-shielded region remains in the light-shielding portion of the electro-optical device 208 to form a stacking pattern. The light-shielding portion of the electro-optical device 208 does not need to completely block light, and at least the intensity of the laser beam can be weakened so that the irradiated region does not ablate. Here, the electric signal input to the electro-optical device 208 by the control device is changed based on the design data, and the laser beam 212 is scanned while changing the light-shielding portion and the transmissive portion of the electro-optic device 208.

Next, the end of the laser ablation process is determined by the position alignment mechanism that recognizes the end face of the substrate or the position marker, the emission of the laser beam of the laser oscillator is stopped, or the laser irradiation to the substrate is terminated by the shutter. FIG. 2 (C) shows a perspective view at this stage.

As shown in FIG. 2C, the island-shaped first material layer 213 and the island-shaped second material layer 214 can be formed on the substrate 200 by performing only the laser ablation treatment. .. The island-shaped first material layer 213 is an amorphous silicon film containing hydrogen, and an amorphous silicon TFT using the island-shaped first material layer 213 as an active layer can be produced. Further, in order to reduce the size of the island-shaped first material layer 213, wet etching may be performed using the island-shaped second material layer 214 as a mask.

In Fig. 2 (C), two patterns are shown to make the figure easier to understand, but in the case of mass production of semiconductor devices, innumerable patterns are shown on one substrate. To form.

Further, when a chromium film is used as the first material layer 201 and a silicon oxide film is used as the second material layer 202, the laser ablation treatment can be performed in the same manner to leave a laminate having a desired shape. .. This process is called LAPP (Laser Ablation Patterning Process). The chromium film thus formed can be used for wiring.

As described above, by using the manufacturing apparatus shown in FIG. 1, it is possible to perform patterning of the semiconductor layer and patterning of wiring without using a photomask. Therefore, it is possible to carry out a part or all of the manufacturing process of the semiconductor device without using a photomask.

Further, the main surface of the substrate is not limited to being installed in a direction parallel to the horizontal plane, and the main surface of the substrate may be oblique or perpendicular to the horizontal plane. It is also possible to scan the laser beam while keeping the main surface of a large-area substrate at an angle by appropriately designing the optical system and setting the substrate transfer system. By making the main surface of the substrate diagonal or perpendicular to the horizontal plane, the footprint of the manufacturing apparatus can be further reduced. Further, by connecting an apparatus capable of forming a film in a state where the main surface of the substrate is oblique or perpendicular to a horizontal plane, for example, a sputtering apparatus, and the manufacturing apparatus of the present invention, the substrate can be smoothly conveyed and the film forming process (sputtering process) ) And the film processing process (ablation process) can be performed continuously.

(Embodiment 2) In this embodiment, FIG. 3 shows an example in which a plurality of electro-optical devices are arranged on the optical path of the laser beam from the laser oscillator.

The emitted laser light is output from the laser oscillating device 303 (YAG laser device, excima laser device, etc.), and has a first optical system 304 for making the beam shape rectangular and a second optical system for shaping. After passing through the 305 and the third optical system 306 for making parallel rays and passing through the first electro-optical device 308a, the reflection mirror 307 bends the optical path in the direction perpendicular to the substrate 300. .. After that, the laser beam is passed through the second electro-optical device 308b and the third electro-optical device to irradiate the irradiated surface. The first electro-optic device 308a, the second electro-optic device 308b, and the third electro-optic device 308c can selectively adjust the area and position of light transmission independently.

By using a plurality of electro-optical devices for the laser beam, it is possible to control the area and position of light transmission with high accuracy. For example, the second electro-optical device 308b uses a transmissive liquid crystal element in which liquid crystal shutters are arranged in a matrix of 120 × 30, and the third electro-optic device 308c uses a liquid crystal shutter in a matrix of 1024 × 768. By using a transmissive liquid crystal element in which is arranged, the area to be shielded from light can be shared. Specifically, in the design pattern, the second electro-optic device 308b is used to block a large area, and the third electro-optic device 308c is used to accurately block a small area and position. It can be combined by shading.

Further, since the distance from the laser oscillating device is short and the intensity of the laser light is higher than that of other electro-optical devices, it is preferable to use the PLZT element for the first electro-optical device 308a. The PLZT element can perform shutter control at a higher speed than the liquid crystal element. In this way, different types of electro-optical devices can be combined.

The three electro-optic devices adjust the area and position through which the laser beam is transmitted by a control device 316 such as a computer. By changing the electrical signals input to each of the three electro-optical devices, the area and position through which the laser light is transmitted are changed, and the ablation area is controlled.

Similar to the manufacturing apparatus shown in the first embodiment, the irradiation region of the laser beam is two-dimensionally and appropriately scanned on the irradiated surface to irradiate a wide area of the substrate. The irradiation region of the laser beam and the substrate are relatively moved for scanning. Here, scanning is performed by a moving means (not shown) that moves the substrate stage 309 holding the substrate in the XY directions. Further, it is preferable that the control device 316 is interlocked so that the moving means for moving the substrate stage 309 in the XY direction can also be controlled. Further, it is preferable that the control device 316 is interlocked so that the laser oscillator 303 can also be controlled. Further, it is preferable that the control device 316 is interlocked so that the reflection mirror 307 can also be controlled.

The irradiated body to be irradiated with the laser is a laminate in which the first material layer 301, the second material layer 314, and the third material layer 315 formed on the substrate 300 are laminated in this order, and irradiates the laser beam. By ablating the second material layer 314, the second material layer 314 and the third material layer 315 are removed, or the first material layer 301, the second material layer 314, and the third material layer 315 are removed. .. The second material layer 314 is a material that is more likely to ablate than the first material layer 301 and the third material layer 315, for example, a material having a lower boiling point or sublimation point, or a material that is more likely to generate gas.

Further, when the substrate 300 is not easily damaged by the laser beam or when the energy density of the laser beam can be reduced, the irradiated body is not limited to the three layers, and may be two layers.

Although FIG. 3 shows an example of using three electro-optic devices, the number is not particularly limited as long as laser ablation processing is possible, and two electro-optic devices may be used, or four or more electro-optic devices may be used. May be used. Further, the sizes of the three electro-optical devices can be made different, and in that case, a magnifying lens, a projection lens, a reducing lens, or the like may be appropriately arranged in the optical path of the laser beam.

Further, the present embodiment can be freely combined with the first embodiment.

(Embodiment 3) In this embodiment, an example in which the DMD is arranged in the optical path of the laser beam is shown.

The light from the laser oscillator is made into a rectangular laser beam by the optical system and irradiates the DMD. Of the group of micromirrors arranged in a matrix on the DMD, only the micromirrors in a predetermined posture are reflected and guided onto the surface to be processed. The posture of each micromirror of this DMD is controlled by a control device such as a computer. The pattern of the irradiation area is controlled on the surface to be processed based on the design data input to the control device, and the laser ablation process is performed on the irradiation area.

An optical system may be appropriately designed using a condenser lens, a beam expander, a homogenizer, a slit, a polarizer, or the like so that the laser ablation process can be performed, and a DMD may be arranged.

Since DMD reflects laser light instead of transmitting it, it is useful because it causes less damage to laser light and less energy loss than a transmissive liquid crystal element. However, it is preferable to design the optical system so that the reflective material of the micromirror does not ablate due to the irradiation of laser light, or to use a reflective material that is difficult to ablate for the micromirror.

Further, the present embodiment can be freely combined with the first embodiment and the second embodiment.

For example, when combined with the second embodiment, it is possible to selectively perform reflection by using a DMD instead of the reflection mirror 307, and further perform laser ablation with a laser beam that has passed through the electro-optical device 308a. In this case, it is preferable that the DMD is controlled by the control device 316 in addition to the electro-optical device.

Since no space is required for a resist coating device, a waste liquid treatment device for resist materials, or a stepper, the footprint can be reduced and a small manufacturing device can be realized.

The manufacturing apparatus according to the present invention can be used as a manufacturing apparatus for display devices such as liquid crystal displays, plasma displays, and EL displays. It can also be used as a manufacturing device for semiconductor integrated circuits. That is, the manufacturing apparatus according to the present invention can be used in place of the photolithography process which has been widely used as a microfabrication technique for semiconductor devices and display devices.

<figref num="1">The perspective view which shows an example of the manufacturing apparatus of this invention.</figref><figref num="2">The schematic diagram which shows the process using the manufacturing apparatus of this invention.</figref><figref num="3">The perspective view which shows another example of the manufacturing apparatus of this invention.</figref>

Code description

100: Substrate 101: First material layer 103: Laser oscillator 104: First optical system 105: Second optical system 106: Third optical system 107: Reflective mirror 108: Electro-optic device 109: Board stage 114: Second material layer 115: Third material layer 116: Control unit 201: First material layer 202: Second material layer 208: Electro-optics 209: Board stage 210: Scanning direction 212: Laser beam 213: Island-shaped first material layer 214: Island-shaped second material layer 300: Substrate 301: First material layer 303: Laser oscillator 304: First optical system 305: Second optical system 306: Third optical system 307: Reflective mirror 308a: First electro-optic device 308b: Second electro-optic device 308c: Third electro-optic device 309: Board stage 314: Second material layer 315: Third material layer 316: Control unit