Heat treatment equipment

[0001] [Technical field to which the invention belongs] The present invention relates to a heat treatment apparatus that heat-treats a substrate by irradiating a semiconductor wafer, a glass substrate, or the like (hereinafter, simply referred to as a substrate) with light. [0002] [Conventional technology] Conventionally, in the ion activation step of a semiconductor wafer after ion implantation, a heat treatment apparatus such as a lamp annealing apparatus using a halogen lamp has been used. In such a heat treatment apparatus, the semiconductor wafer is ion-activated by heating (annealing) the semiconductor wafer to a temperature of, for example, about 1000 ° C. to 1100 ° C. In such a heat treatment apparatus, the temperature of the substrate is raised at a speed of about several hundred degrees per second by utilizing the energy of the light emitted from the halogen lamp. [0003] However, even when ion activation of the semiconductor wafer is performed using a heat treatment device that raises the temperature of the substrate at a rate of several hundred degrees per second, the profile of the ions injected into the semiconductor wafer is blunted, that is, due to heat. It has been found that a phenomenon in which ions are diffused occurs. When such a phenomenon occurs, even if ions are injected into the surface of the semiconductor wafer at a high concentration, the ions after the injection are diffused, so that the problem is that the ions must be injected more than necessary. Was occurring. [0004] In order to solve the above-mentioned problems, by irradiating the surface of the semiconductor wafer with a flash using a xenon flash lamp or the like, only the surface of the semiconductor wafer in which ions are injected is raised in an extremely short time (several milliseconds or less). A technique for heating has been proposed (see, for example, Patent Documents 1 and 2). If the temperature rise is extremely short with a xenon flash lamp, there is not enough time for the ions to diffuse, so only ion activation should be performed without blunting the profile of the ions injected into the semiconductor wafer. Can be done. [0005] Further, not limited to the heating method by light irradiation, in general, in a heat treatment apparatus such as a semiconductor apparatus, it is necessary to eliminate as much as possible a contamination source that causes particle contamination and metal contamination. Therefore, a cleaning method has been proposed in which the vapor-deposited material adhering to parts in the heat treatment chamber is heated to sublimate and removed (see, for example, Patent Document 3). In addition, there is also a cleaning method in which the decomposition products of the raw material gas adhering to the heat treatment chamber are removed by heat treatment in an atmosphere such as halogen gas (see, for example, Patent Document 4). [0006] [Patent Document 1] JP-A-59-169125 [Patent Document 2] Japanese Unexamined Patent Publication No. 63-166219 [Patent Document 3] Japanese Patent Application Laid-Open No. 2002-60926 [Patent Document 4] Japanese Unexamined Patent Publication No. 2002-313727 [0007] [Problems to be Solved by the Invention] However, there are various causes for the heat treatment chamber to become dirty, and in addition to the adhesion of the vapor deposition material and the like as described above, for example, the semiconductor wafer may be cracked during the treatment and the fragments may be scattered in the treatment chamber. In particular, in the case of a heat treatment device using a xenon flash lamp, the semiconductor wafer is instantaneously irradiated with light having extremely high energy, so that the surface temperature of the semiconductor wafer rises rapidly in an instant and the surface expands rapidly. Could cause the semiconductor wafer to crack. [0008] Since it is impossible to remove such broken pieces of the semiconductor wafer by heat treatment or the like, it is necessary to remove them by opening the heat treatment chamber and mechanically cleaning the inside. However, it is not easy to clean the heat treatment chamber having a complicated structure, and it is difficult to completely remove the pollution source such as the fragments of the semiconductor wafer. [0009] The present invention has been made in view of the above problems, and an object of the present invention is to provide a heat treatment apparatus capable of easily cleaning the inside of a chamber. [0010] [Means for solving problems] In order to solve the above problems, the invention of claim 1 is a heat treatment apparatus for heating a substrate by irradiating the substrate with light, a light source having a lamp, a chamber provided below the light source, and the like. A holding means for holding the substrate in a substantially horizontal posture in the chamber and a liner detachably provided with respect to the chamber and arranged along the chamber wall surface of the chamber are provided.<u style="single">, The liner is made of quartz, and the quartz surface of the liner is roughened by honing treatment.</u>.. [0011] Further, in the invention of claim 2, the liner has a bottomed tubular shape in the heat treatment apparatus according to the invention of claim 1. [0012] Further, in the invention of claim 3, in the heat treatment apparatus according to the invention of claim 2, the liner is a split body that can be separated into a cylinder portion and a bottom portion. [0013] Further, the invention of claim 4 is the heat treatment apparatus according to any one of claims 1 to 3.<u style="single">Of the quartz surface of the liner, the outer surface facing the metal surface of the chamber is subjected to honing treatment to roughen it, and the inner surface is made smoother than the outer surface.</u>.. [0014] Further, in the invention of claim 5, in the heat treatment apparatus according to any one of claims 1 to 4, the lamp is a flash lamp, and the holding means is provided with an assist heating means for preheating the substrate to be held. I have. [0015] BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. [0016] 1 and 2 are side sectional views showing the configuration of the heat treatment apparatus according to the present invention. This heat treatment device is a device that heat-treats a substrate such as a semiconductor wafer by a flash of light from a xenon flash lamp. [0017] This heat treatment apparatus is composed of a translucent plate 61, a bottom plate 62, and a pair of side plates 63, 64, and includes a chamber 65 for accommodating a semiconductor wafer W and performing heat treatment therein. The light-transmitting plate 61 forming the upper part of the chamber 65 is made of a material having infrared transmittance such as quartz, and functions as a chamber window that transmits the light emitted from the light source 5 and guides it into the chamber 65. are doing. The bottom plate 62 forming the bottom of the chamber 65 and the side plates 63 and 64 forming the side wall are made of a metal material having excellent strength and heat resistance, such as stainless steel. [0018] Further, the bottom plate 62 is provided with a support pin 70 for supporting the semiconductor wafer W from the lower surface thereof by penetrating the heat diffusion plate 73 and the heating plate 74, which will be described later. Further, the side plate 64 is formed with an opening 66 for carrying in and out of the semiconductor wafer W. The opening 66 can be opened and closed by a gate valve 68 that rotates around a shaft 67. The semiconductor wafer W has an opening 66<u style="single">Open</u>In this state, it is carried into the chamber 65 by a transfer robot (not shown). Further, when the semiconductor wafer W is heat-treated in the chamber 65, the opening 66 is closed by the gate valve 68. [0019] The chamber 65 is provided below the light source 5. The light source 5 includes a plurality of (25 in this embodiment) xenon flash lamps 69 (hereinafter, also simply referred to as flash lamps 69) and a reflector 71. The plurality of flash lamps 69 are rod-shaped lamps each having a long cylindrical shape, and are arranged in a plane parallel to each other so that their longitudinal directions are along the horizontal direction. The reflector 71 puts them all above the multiple flash lamps 69.<u style="single">cover</u>It is arranged so as to. [0020] The xenon flash lamp 69 includes a glass tube in which xenon gas is sealed inside and an anode and a cathode connected to a capacitor are arranged at both ends thereof, and a trigger electrode wound around an external portion of the glass tube. To be equipped with. Since xenon gas is electrically an insulator, electricity does not flow in the glass tube under normal conditions. However, when a high voltage is applied to the trigger electrode to break the insulation, the electricity stored in the capacitor instantly flows into the glass tube, and the xenon gas is heated by the Joule heat at that time and light is emitted. .. In this xenon flash lamp 69, since the electrostatic energy stored in advance is converted into an extremely short optical pulse of 0.1 millisecond to 10 millisecond, it is possible to irradiate extremely strong light as compared with a continuously lit light source. It has the feature. [0021] [0021] A light diffusing plate 72 is arranged between the light source 5 and the light transmitting plate 61. As the light diffusing plate 72, a quartz glass surface as an infrared ray transmitting material that has been subjected to light diffusing processing is used. [0022] A part of the light emitted from the flash lamp 69 directly passes through the light diffusing plate 72 and the light transmitting plate 61 and goes into the chamber 65. Further, the other part of the light emitted from the flash lamp 69 is once reflected by the reflector 71, and then passes through the light diffusing plate 72 and the light transmitting plate 61 and heads into the chamber 65. [0023] A heating plate 74 and a heat diffusion plate 73 are provided in the chamber 65. The heat diffusion plate 73 is attached to the upper surface of the heating plate 74. Further, a misalignment prevention pin 75 of the semiconductor wafer W is attached to the surface of the heat diffusion plate 73. [0024] The heating plate 74 is for preheating (assist heating) the semiconductor wafer W. The heating plate 74 is made of aluminum nitride, and has a structure in which a heater and a sensor for controlling the heater are housed therein. On the other hand, the heat diffusion plate 73 is for diffusing the heat energy from the heating plate 74 to uniformly preheat the semiconductor wafer W. The material of this heat diffusion plate 73 is sapphire (Al).₂O₃: Aluminum oxide) and quartz with relatively low thermal conductivity are used. [0025] Further, the liner 20 is fitted along the chamber wall surface of the chamber 65. The liner 20 is not fixed to the chamber 65 and is removable. Here, the chamber wall surface is an inner wall surface composed of the side plates 63, 64 and the bottom plate 62 of the chamber 65. The liner 20 is made of, for example, quartz, and is formed in a bottomed tubular shape so as to cover the entire inner wall surface of the side plates 63, 64 and the bottom plate 62. Therefore, the entire metal surface inside the chamber 65 will be covered by the liner 20. [0026] FIG. 3 is a perspective view of the liner 20. In the present embodiment, the tubular portion 20a covering the side plates 63 and 64 and the bottom portion 20b covering the bottom plate 62 are separately manufactured and joined to form a bottomed tubular liner 20. That is, the liner 20 is a split body that can be separated into a tubular portion 20a and a bottom portion 20b. The bottom portion 20b of the liner 20 is formed with a hole 22 for raising and lowering the tubular body 41, which will be described later, and a through hole 21 through which the support pin 70 penetrates. Further, although the description is omitted in FIG. 3 for convenience of illustration, an annular protrusion that slightly protrudes upward is formed at the peripheral edge of the hole 22 and the through hole 21. This protruding portion is for preventing the debris from falling from the hole 22 or the through hole 21 when cleaning the debris of the semiconductor wafer W scattered in the liner 20. On the other hand, the tubular portion 20a is formed with an opening 23 for carrying in and out the semiconductor wafer W and a flow path (not shown) for passing gas flowing from the introduction path 78 toward the discharge path 79. .. The liner 20 is not limited to the divided body, and may be integrally molded into a bottomed tubular shape. [0027] Of the quartz surface of the liner 20, the outer surface facing the metal surface of the chamber 65 (that is, the inner wall surface of the side plates 63, 64 and the bottom plate 62) is roughened by honing treatment, and the inner surface is not honed. The surface is smoother than the outer surface. [0028] Here, the honing treatment is a kind of surface roughening treatment, and there are a dry type and a wet treatment method. The wet (liquid) honing treatment is a method of suspending a powdery abrasive (abrasive grains) in a liquid such as water and spraying it on the outer surface of the liner 20 at high speed to roughen the surface. In the case of the wet honing treatment, the surface roughness can be controlled by the spraying pressure and speed of the liquid, the amount of the abrasive, the type, the shape, the size, the hardness, the specific gravity, the suspension concentration and the like. [0029] On the other hand, the dry honing treatment is a method of roughening the outer surface of the liner 20 by spraying an abrasive with air at high speed. Even in the case of the dry honing treatment, the surface roughness can be controlled by the air blowing pressure, speed, amount of abrasive, type, shape, size, hardness, specific gravity and the like. [0030] In any of the above methods, particles such as silicon carbide, alumina, zirconia, stainless steel, iron, glass beads and plastic shot can be used as the abrasive. Then, the outer surface of the liner 20 subjected to the honing treatment is roughened to exhibit a so-called satin pattern. Therefore, even if the flash emitted from the flash lamp 69 enters the liner 20, it is prevented from being scattered by the roughened outer surface and reaching the metal surface inside the chamber 65. [0031] A heater reflector 30 is provided around the heating plate 74, the heat diffusion plate 73, and the tubular body 41 that supports them, except for the upper surface of the heat diffusion plate 73. The heater reflector 30 is also a member made of quartz, and both surfaces of the quartz surface are subjected to the same honing treatment as described above. The heater reflector 30 prevents heat energy from the heating plate 74 from being conducted to other than the heat diffusion plate 73. [0032] The heat diffusion plate 73 and the heating plate 74 are configured to move up and down between the carry-in / carry-out position of the semiconductor wafer W shown in FIG. 1 and the heat treatment position of the semiconductor wafer W shown in FIG. 2 by driving the motor 40. .. [0033] That is, the heating plate 74 is connected to the moving plate 42 via the tubular body 41. The moving plate 42 can be raised and lowered by being guided by a guide member 43 that is supported by the bottom plate 62 of the chamber 65. A fixing plate 44 is fixed to the lower end of the guide member 43, and a motor 40 for rotationally driving the ball screw 45 is arranged at the center of the fixing plate 44. The ball screw 45 is screwed with the nut 48 connected to the moving plate 42 via the connecting members 46 and 47. Therefore, the heat diffusion plate 73 and the heating plate 74 can move up and down between the carry-in / carry-out position of the semiconductor wafer W shown in FIG. 1 and the heat treatment position of the semiconductor wafer W shown in FIG. 2 by driving the motor 40. it can. The heater reflector 30 arranged on the moving plate 42 also moves up and down as the heat diffusion plate 73 and the heating plate 74 move up and down. [0034] At the loading / unloading positions of the semiconductor wafer W shown in FIG. 1, the semiconductor wafer W carried in from the opening 66 using a transfer robot (not shown) is placed on the support pin 70, or is placed on the support pin 70. The position where the heat diffusion plate 73 and the heating plate 74 are lowered so that the semiconductor wafer W can be carried out from the opening 66. In this state, the upper end of the support pin 70 passes through the through holes formed in the heat diffusion plate 73 and the heating plate 74, and projects upward from the surface of the heat diffusion plate 73. [0035] On the other hand, the heat treatment position of the semiconductor wafer W shown in FIG. 2 is a position where the heat diffusion plate 73 and the heating plate 74 rise above the upper end of the support pin 70 in order to perform the heat treatment on the semiconductor wafer W. In the process of the heat diffusion plate 73 and the heating plate 74 rising from the carry-in / carry-out position of FIG. 1 to the heat treatment position of FIG. 2, the semiconductor wafer W placed on the support pin 70 is received by the heat diffusion plate 73, and the lower surface thereof. Is supported by the surface of the heat diffusing plate 73 and rises, and is held in a horizontal posture at a position close to the translucent plate 61 in the chamber 65. On the contrary, in the process in which the heat diffusion plate 73 and the heating plate 74 descend from the heat treatment position to the carry-in / carry-out position, the semiconductor wafer W supported by the heat diffusion plate 73 is delivered to the support pin 70. [0036] When the heat diffusion plate 73 and the heating plate 74 supporting the semiconductor wafer W are raised to the heat treatment positions, the translucent plate 61 is located between the semiconductor wafer W held by them and the light source 5. The distance between the heat diffusion plate 73 and the light source 5 at this time can be adjusted to an arbitrary value by controlling the amount of rotation of the motor 40. [0037] Further, between the bottom plate 62 of the chamber 65 and the moving plate 42, a stretchable bellows 77 for maintaining the chamber 65 in an airtight body is arranged so as to surround the tubular body 41. When the heat diffusion plate 73 and the heating plate 74 rise to the heat treatment position, the bellows 77 contracts, and when the heat diffusion plate 73 and the heating plate 74 descend to the carry-in / carry-out position, the bellows 77 expands to create an atmosphere inside the chamber 65. Block from the outside atmosphere. [0038] An introduction path 78 communicated with the on-off valve 80 is formed in the side plate 63 opposite to the opening 66 in the chamber 65. The introduction path 78 is for introducing a gas required for treatment, for example, an inert nitrogen gas, into the chamber 65. On the other hand, the opening 66 in the side plate 64 is formed with a discharge path 79 communicated with the on-off valve 81. The discharge path 79 is for discharging the gas in the chamber 65, and is connected to an exhaust means (not shown) via an on-off valve 81. [0039] Next, the heat treatment operation of the semiconductor wafer W by the heat treatment apparatus having the above configuration will be described. The semiconductor wafer W to be processed in this heat treatment apparatus is a semiconductor wafer after ion implantation. [0040] In this heat treatment apparatus, the semiconductor wafer W is moved through the opening 66 by a transfer robot (not shown) in a state where the heat diffusion plate 73 and the heating plate 74 are arranged at the loading / unloading positions of the semiconductor wafer W shown in FIG. It is carried in and placed on the support pin 70. When the loading of the semiconductor wafer W is completed, the opening 66 is closed by the gate valve 68. After that, the heat diffusion plate 73 and the heating plate 74 rise to the heat treatment position of the semiconductor wafer W shown in FIG. 2 by driving the motor 40, and hold the semiconductor wafer W in the horizontal posture. Further, the on-off valve 80 and the on-off valve 81 are opened to form an air flow of nitrogen gas in the chamber 65. [0041] The heat diffusion plate 73 and the heating plate 74 are preheated to a predetermined temperature by the action of a heater built in the heating plate 74. Therefore, when the heat diffusion plate 73 and the heating plate 74 are raised to the heat treatment position of the semiconductor wafer W, the semiconductor wafer W is preheated by coming into contact with the heated heat diffusion plate 73, and the semiconductor wafer W is preheated. The temperature gradually rises. [0042] In this state, the semiconductor wafer W is continuously heated by the heat diffusion plate 73. Then, when the temperature of the semiconductor wafer W rises, a temperature sensor (not shown) constantly monitors whether or not the surface temperature of the semiconductor wafer W has reached the preheating temperature T1. [0043] The preheating temperature T1 is, for example, a temperature of about 200 ° C to 600 ° C. Even if the semiconductor wafer W is heated to such a preheating temperature T1, the ions injected into the semiconductor wafer W will not diffuse. [0044] Eventually, when the surface temperature of the semiconductor wafer W reaches the preheating temperature T1, the flash lamp 69 is turned on to perform flash heating. The lighting time of the flash lamp 69 in this flash heating step is about 0.1 millisecond to 10 milliseconds. As described above, in the flash lamp 69, the electrostatic energy stored in advance is converted into such an extremely short optical pulse, so that an extremely strong flash is irradiated. [0045] By such flash heating, the surface temperature of the semiconductor wafer W reaches the temperature T2 instantaneously. This temperature T2 is a temperature required for the ion activation treatment of the semiconductor wafer W at about 1000 ° C to 1100 ° C. When the surface of the semiconductor wafer W is raised to such a processing temperature T2, the ions injected into the semiconductor wafer W are activated. [0046] At this time, since the surface temperature of the semiconductor wafer W is raised to the processing temperature T2 in an extremely short time of about 0.1 msecond to 10 msecond, the ion activation in the semiconductor wafer W is completed in a short time. Therefore, the ions injected into the semiconductor wafer W do not diffuse, and it is possible to prevent the occurrence of the phenomenon that the profile of the ions injected into the semiconductor wafer W becomes dull. Since the time required for ion activation is extremely short compared to the time required for ion diffusion, ion activation is completed even in a short time without diffusion of about 0.1 ms to 10 ms. .. [0047] Further, before the flash lamp 69 is turned on to heat the semiconductor wafer W, the surface temperature of the semiconductor wafer W is heated to a preheating temperature T1 of about 200 ° C to 600 ° C by using the heating plate 74. Therefore, the flash lamp 69 can quickly raise the temperature of the semiconductor wafer W to a processing temperature T2 of about 1000 ° C to 1100 ° C. [0048] Further, when an extremely strong flash is emitted from the flash lamp 69, the flash is blocked by the outer surface of the liner 20 that has been subjected to the honing treatment, so that the metal surface of the chamber 65 is exposed to the flash from the flash lamp 69. It is prevented from being oxidized. [0049] After the flash heating process is completed, the heat diffusion plate 73 and the heating plate 74 are driven by the motor 40 to descend to the loading / unloading positions of the semiconductor wafer W shown in FIG. 1, and the opening 66 closed by the gate valve 68. But<u style="single">Open</u>Will be done. Then, the semiconductor wafer W placed on the support pin 70 is carried out by a transfer robot (not shown). As described above, a series of heat treatment operations is completed. [0050] By the way, as described above, when the flash lamp 69 is turned on to heat the semiconductor wafer W, the surface of the wafer may be rapidly expanded by a momentary flash irradiation and the semiconductor wafer W may be cracked. Then, when the semiconductor wafer W is broken, the fragments may be scattered in the chamber 65. [0051] In the present embodiment, since the liner 20 is detachably provided along the chamber wall surface of the chamber 65, even if the semiconductor wafer W is cracked and debris is scattered, the liner 20 is simply removed from the chamber 65. The inside of the chamber 65 can be easily cleaned with. Further, in order to facilitate cleaning of the removed liner 20 itself, it is preferable that the inner surface of the liner 20 is smooth. [0052] The procedure for removing the liner 20 from the chamber 65 is as follows. First, the light source 5 butterflyed in the chamber 65 is opened and opened upward. At this time, the light diffusing plate 72 and the light transmitting plate 61 are also opened and removed. Next, the screw fixing the tubular body 41 to the moving plate 42 is removed, and the heat diffusion plate 73, the heating plate 74, and the tubular body 41 are taken out from the upper opening of the chamber 65. At the same time, the heater reflector 30 is also taken out from the upper opening of the chamber 65. The state at this time is shown in Fig. 4. [0053] Then, as shown by the arrow AR4 in FIG. 4, the removable liner 20 is removed from the chamber 65. When returning the liner 20 that has been cleaned, the procedure is exactly the reverse of the above. [0054] Although the embodiments of the present invention have been described above, the present invention is not limited to the above examples. For example, in the above embodiment, the light source 5 is provided with 25 flash lamps 69, but the number of flash lamps 69 is not limited to this and can be arbitrary. Further, the flash lamp 69 is not limited to the xenon flash lamp, and for example, a krypton flash lamp may be used. [0055] Further, even in a heat treatment apparatus in which the light source 5 is provided with another type of lamp (for example, a halogen lamp) instead of the flash lamp 69 and the semiconductor wafer W is heated by irradiation with light from the lamp, the technique according to the present invention can be applied. Can be applied. That is, the inside of the chamber can be easily cleaned by arranging the liner made of quartz detachably along the wall surface of the chamber. [0056] Further, in the above embodiment, the semiconductor wafer is irradiated with light to perform the ion activation treatment, but the substrate to be treated by the heat treatment apparatus according to the present invention is not limited to the semiconductor wafer. .. For example, a glass substrate on which various silicon films such as a silicon nitride film and a polycrystalline silicon film are formed may be treated by the heat treatment apparatus according to the present invention. As an example, silicon is ion-implanted into a polycrystalline silicon film formed on a glass substrate by the CVD method to form an amorphous silicon film, and a silicon oxide film to be an antireflection film is further formed on the amorphous silicon film. Form. In this state, the heat treatment apparatus according to the present invention can irradiate the entire surface of the amorphous silicon film with light to form a polycrystalline silicon film in which the amorphous silicon film is polycrystallized. [0057] Further, the heat treatment according to the present invention is applied to a TFT substrate having a structure in which an underlying silicon oxide film or a polysilicon film obtained by crystallizing amorphous silicon is formed on a glass substrate and impurities such as phosphorus and boron are doped in the polysilicon film. It is also possible to activate the impurities injected in the doping step by irradiating with light by the apparatus. [0058] [0058] [Effect of the invention] As described above, according to the invention of claim 1, since the liner is detachably arranged along the chamber wall surface of the chamber, the liner can be used even when the substrate is cracked and debris is scattered. The inside of the chamber can be easily cleaned just by removing it.<u style="single">Moreover, since the liner is made of quartz, there is no risk of increasing the pollution source. Further, since the quartz surface of the liner is subjected to a honing treatment to roughen the surface, the surface of the chamber is shielded from light and oxidation is prevented.</u>[0059] Further, according to the invention of claim 2, since the liner has a bottomed tubular shape, the inside of the chamber can be easily cleaned while securing the processing space in the chamber. [0060] Further, according to the invention of claim 3, since the liner is a split body that can be separated into a cylinder portion and a bottom portion, processing of each can be facilitated and the cost of the liner can be reduced. [0061] Further, according to the invention of claim 4,<u style="single">Of the quartz surface of the liner, the outer surface facing the metal surface of the chamber is roughened by honing treatment, and the inner surface is smoother than the outer surface, so the liner itself can be easily cleaned.</u>.. [0062] Further, according to the invention of claim 5, since the lamp is a flash lamp and includes an assist heating means for preheating the substrate held by the holding means, the liner is removed even in a heat treatment apparatus using the flash lamp. The inside of the chamber can be easily cleaned just by itself. [Simple explanation of drawings] FIG. 1 is a side sectional view showing a configuration of a heat treatment apparatus according to the present invention. FIG. 2 is a side sectional view showing a configuration of a heat treatment apparatus according to the present invention. FIG. 3 is a perspective view of a liner. FIG. 4 is a side sectional view showing a heat treatment apparatus when the liner is removed. [Explanation of symbols] 5 light source 20 liner 20a tube 20b bottom 30 heater reflector 61 Translucent plate 62 Bottom plate 63,64 side plate 65 chamber 69 flash lamp 71 reflector 72 Light diffuser 73 Heat diffuser 74 heating plate W semiconductor wafer