Organic semiconductor device, method for producing organic semiconductor device, organic electroluminescent device, and method for producing organic electroluminescent device
3 claims: 2 independent, 1 dependent
- 1少なくとも正孔輸送性を有する有機層と発光性を有する有機層とを含んだ複数の有機層と、前記複数の有機層を挟持する陰極及び陽極とを基板上に備えた有機エレクトロルミネセンス装置の製造方法であって、 前記複数の有機層のうち一の有機層を構成する材料を第1溶媒に溶解又は分散させた液状組成物の塗布膜を 対象面である前記陽極の表面 に形成する塗布膜形成工程と、 前記塗布膜のうち前記対象面側の所定の厚さ部分を前記第1溶媒を含む所定の溶媒に溶解しないように変質させる変質工程と、 前記塗布膜のうち前記変質工程で変質していない非変質部分を前記所定の溶媒によって除去する除去工程と を具備し、 前記陽極が、導電性を有する金属酸化物を主成分とし、 前記塗布膜が、キャリア輸送性有機化合物と、二重結合基、エポキシ基及び環状エーテル基のうち少なくとも1種類を含む架橋性有機化合物とを含んでおり、 前記変質工程では、前記塗布膜に含まれる前記架橋性有機化合物に紫外線を照射することによって前記金属酸化物に含まれる酸素原子と前記架橋性有機化合物の分子とを架橋させる ことを特徴とする有機エレクトロルミネセンス装置の製造方法。
- 2少なくとも正孔輸送性を有する第1有機層と発光性を有する第2有機層とを含んだ複数の有機層と、前記複数の有機層を挟持する陰極及び陽極とを基板上に備えた有機エレクトロルミネセンス装置の製造方法であって、 前記第1有機層を構成する材料を第1溶媒に溶解又は分散させた液状組成物の第1塗布膜を 対象面である前記陽極の表面 に形成する第1塗布膜形成工程と、 前記第1塗布膜のうち前記対象面側の所定の厚さ部分を前記第1溶媒を含む所定の溶媒に溶解しないように変質させる第1変質工程と、 前記第1塗布膜のうち前記第1変質工程で変質していない非変質部分を前記所定の溶媒によって除去する第1除去工程と を有する第1有機層形成工程と、 前記第1有機層上に前記第2有機層を形成する第2有機層形成工程と を具備 し、 前記陽極が、導電性を有する金属酸化物を主成分とし、 前記第1塗布膜が、キャリア輸送性有機化合物と、二重結合基、エポキシ基及び環状エーテル基のうち少なくとも1種類を含む架橋性有機化合物とを含んでおり、 前記第1変質工程では、前記第1塗布膜に含まれる前記架橋性有機化合物に紫外線を照射することによって前記金属酸化物に含まれる酸素原子と前記架橋性有機化合物の分子とを架橋させる ことを特徴とする有機エレクトロルミネセンス装置の製造方法。
- 3前記塗布膜を複数形成し、 複数の前記塗布膜のうち所定の異なる前記塗布膜に対しては、照射される光量が異なるように前記紫外線を照射する ことを特徴とする請求項1に記載の有機エレクトロルミネセンス装置の製造方法。
Independent claims3
78 paragraphs, as filed
The present invention relates to a method for manufacturing an organic electroluminescence apparatus.
Organic electroluminescence devices (hereinafter referred to as "organic EL devices") used in display devices such as displays generally include a light emitting layer having light emission and a hole transport layer having hole transport property. An organic layer containing the above organic layer and a cathode and an anode sandwiching the organic layer are provided on the substrate. The light emitting layer and the hole transport layer of the organic EL device are laminated. The electrons from the cathode and the holes from the anode are combined in the light emitting layer to emit light.
As a method of forming two organic layers, a light emitting layer and a hole transport layer, a method of sequentially depositing and laminating the materials constituting the light emitting layer and the hole transport layer on a substrate by a vapor deposition method (dry process). Alternatively, a method (wet) in which a liquid composition in which the materials constituting the light emitting layer and the hole transport layer are dissolved or dispersed in an organic solvent is prepared, the liquid composition is formed on a substrate, and then the organic solvent is evaporated. Process) and so on. Examples of the wet process include an inkjet method. According to the inkjet method, an organic layer can be easily formed on a large-area substrate, which is particularly expected in the manufacture of organic EL devices for displays, which have been increasing in size in recent years (for example,). , Patent Documents 1 to 3). <patcit num="1"><text>Japanese Unexamined Patent Publication No. 2000-77185</text></patcit><patcit num="2"><text>Japanese Unexamined Patent Publication No. 2000-208254</text></patcit><patcit num="3"><text>Japanese Unexamined Patent Publication No. 2000-243300</text></patcit>
<p> However, when the organic layer is formed by the inkjet method, the liquid repellency or liquid-parent property of the surface to which the liquid composition is applied is often non-uniform, and the film thickness of the coating film is non-uniform. Often becomes. Not only organic EL devices but also devices in which organic films are laminated, for example, other organic semiconductor devices such as organic transistors have the same problem.</p><p> In view of the above circumstances, an object of the present invention is to provide a method for manufacturing an organic electroluminescence apparatus capable of making the layer thickness of an organic semiconductor layer uniform.</p>
<p> In order to achieve the above object, the method for manufacturing an organic semiconductor device according to the present invention is a method for manufacturing an organic semiconductor device in which a plurality of organic semiconductor layers are laminated on a substrate, and among the plurality of organic semiconductor layers. A coating film of a liquid composition obtained by dissolving or dispersing a material constituting one organic semiconductor layer in a first solvent is applied on the surface of the substrate and on the surface of another organic semiconductor layer among the plurality of organic semiconductor layers. A coating film forming step of forming on the target surface including the coating film, and a alteration step of altering a predetermined thickness portion of the coating film on the target surface side so as not to be dissolved in a predetermined solvent containing the first solvent. It was formed in the first organic semiconductor layer forming step and the first organic semiconductor layer forming step, which include a removing step of removing the non-altered portion of the coating film that has not been altered in the alteration step with the predetermined solvent. It is characterized by comprising a second organic semiconductor layer forming step of forming the second organic semiconductor layer on the first organic semiconductor layer.</p><p> According to the present invention, a coating film of a liquid composition in which a material constituting one of a plurality of organic semiconductor layers is dissolved or dispersed in a first solvent is applied on the surface of a substrate and a plurality of organic semiconductor layers. It is formed on the target surface including the surface of the other organic semiconductor layer, and the predetermined thickness portion of the coating film on the target surface side is not dissolved in a predetermined solvent including the first solvent. Since it was decided to change the quality of the coating film and remove the non-altered portion of the coating film with a predetermined solvent, the altered coating film having a predetermined thickness remains, and the remaining portion of the coating film is an organic semiconductor layer. become. This makes it possible to form an organic semiconductor layer having a uniform film thickness.</p><p> Further, it is preferable that the surface of the substrate is provided with electrodes electrically connected to the plurality of organic semiconductor layers, and the target surface is the surface of the electrodes. According to the present invention, electrodes electrically connected to a plurality of organic semiconductor layers are provided on the surface of the substrate, and since the target surface is the surface of the electrodes, the organic semiconductor layer is directly placed on the surface of the electrodes. It will be formed. By forming the organic semiconductor layer directly on the surface of the electrode, the organic semiconductor layer and the electrode can be brought into surface contact with each other, so that the electric resistance between the organic semiconductor layer and the electrode can be suppressed to a small value, and the conductivity can be suppressed. Can be improved.</p><p> Further, it is preferable that the electrode contains a conductive metal oxide as a main component. When the organic semiconductor layer is formed on a conductive metal oxide, the present inventors have crosslinked the organic compound to form an oxygen atom contained in the metal oxide and an organic compound contained in the organic semiconductor layer. It has been found that the cross-linked portion of the molecule of the above-mentioned molecule is chemically bonded, and in this portion, it becomes particularly difficult to dissolve in a predetermined solvent. In the present invention, since the electrode is mainly composed of a conductive metal oxide, it is possible to more effectively prevent the above-mentioned organic semiconductor layer from being dissolved in a predetermined solvent.</p><p> The organic semiconductor device according to the present invention is preferably manufactured by the above-mentioned method for manufacturing an organic semiconductor device. According to the present invention, it is possible to obtain a high-quality organic semiconductor device in which the layer thickness of the organic semiconductor layer is uniform and the current density of the current flowing through the organic semiconductor layer is not uneven.</p><p> The method for producing an organic electroluminescence apparatus according to the present invention comprises a plurality of organic layers including at least an organic layer having hole transporting property and an organic layer having light emitting property, a solvent sandwiching the plurality of organic layers, and a solvent. A method for manufacturing an organic electroluminescence apparatus having an anode on a substrate, wherein a liquid composition in which a material constituting one of the plurality of organic layers is dissolved or dispersed in a first solvent is applied. A coating film forming step of forming a film on a target surface including the surface of another organic layer among the anode and the plurality of organic layers, and a predetermined thickness portion of the coating film on the target surface side. Includes a alteration step of altering the coating film so that it does not dissolve in a predetermined solvent containing the first solvent, and a removal step of removing the non-altered portion of the coating film that has not been altered in the alteration step with the predetermined solvent. It is characterized by doing.</p><p> According to the present invention, a coating film of a liquid composition in which a material constituting one of a plurality of organic layers is dissolved or dispersed in a first solvent is applied on an anode and another organic layer among the plurality of organic layers. It is formed on the target surface including the surface of the coating film, and the predetermined thickness portion on the target surface side of the coating film is altered so as not to be dissolved in a predetermined solvent containing the first solvent, and the coating film is altered. Since it was decided to remove the non-deteriorated portion with a predetermined solvent, the altered coating film having a predetermined thickness remains, and the residual portion of the coating film becomes an organic layer. This makes it possible to form an organic layer having a uniform layer thickness.</p><p> In the method for producing an organic electroluminescence device according to the present invention, a plurality of organic layers having at least a first organic layer having hole transporting property and a second organic layer having light emitting property are laminated, and the plurality of organic layers are laminated. Is a method for manufacturing an organic electroluminescence device sandwiched between a cathode and an anode on a substrate, and the first coating of a liquid composition in which the material constituting the first organic layer is dissolved or dispersed in a first solvent. The first coating film forming step of forming the film on the anode and the predetermined thickness portion of the first coating film on the target surface side are altered so as not to be dissolved in a predetermined solvent containing the first solvent. A first organic layer forming step having a first alteration step and a first removal step of removing a non-altered portion of the first coating film that has not been altered in the first alteration step with the predetermined solvent, and the above-mentioned It is characterized by including a second organic layer forming step of forming the second organic layer on the first organic layer.</p><p> According to the present invention, a first coating film of a liquid composition in which a material constituting the first organic layer is dissolved or dispersed in a first solvent is formed on an anode, and a predetermined coating film on the target surface side of the first coating film is formed. The thick portion of the first coating film is altered so as not to dissolve in a predetermined solvent containing the first solvent, and the non-altered portion of the first coating film is removed with a predetermined solvent to form the first organic layer. The first coating film having a predetermined thickness that has been altered remains, and the remaining portion of the first coating film becomes a first organic layer having a uniform layer thickness. Since the second organic layer is formed on the first organic layer having a uniform layer thickness, holes are uniformly injected into the second organic layer. This makes it possible to eliminate uneven light emission.</p><p> In addition, the second organic layer forming step forms a second coating film of a liquid composition in which the material constituting the second organic layer is dissolved or dispersed in the predetermined solvent on the first organic layer. 2 The coating film forming step, the second alteration step of altering the predetermined thickness portion of the first organic layer on the surface side of the second coating film so as not to dissolve in the predetermined solvent, and the second coating. It is preferable to have a second removing step of removing the non-altered portion of the film that has not been altered in the second alteration step with the predetermined solvent. According to the present invention, in the second organic layer forming step, a second coating film of a liquid composition in which the material constituting the second organic layer is dissolved or dispersed in a predetermined solvent is formed on the anode, and the second coating is performed. A predetermined thickness portion of the first organic layer on the surface side of the film is altered so as not to be dissolved in a predetermined solvent, and an unaltered non-altered portion of the second coating film is removed by a predetermined solvent. As a result, the modified second coating film having a predetermined thickness remains, and the remaining portion of the second coating film becomes a second organic layer having a uniform layer thickness. Since the layer thickness of the second organic layer having light emission becomes uniform in addition to the first organic layer having hole transporting property, uneven light emission can be more reliably eliminated.</p><p> Further, it is preferable that the anode contains a conductive metal oxide as a main component. According to the present invention, since the anode contains a conductive metal oxide as a main component, it becomes particularly difficult to dissolve in a predetermined solvent on the surface side of the anode in the first coating film. When the substrate and anode have light transmission, the light emitted from the second organic layer passes through the anode and emits light from the substrate side, so that it can be used as a so-called bottom emission type organic electroluminescence device. Is possible.</p><p> Further, the first coating film contains a carrier-transporting organic compound and a crosslinkable organic compound composed of polysiloxane, and in the first alteration step, the crosslinkable organic compound contained in the first coating film. Is preferably crosslinked by heat treatment. According to the present invention, the first coating film contains a carrier-transporting organic compound and a crosslinkable organic compound composed of polysiloxane, and in the first alteration step, the crosslinkable organic compound contained in the first coating film. Is cross-linked by heat treatment, so that the cross-linking reaction in the first coating film can be surely generated. For example, by adjusting the heating temperature and the heating time, it is possible to crosslink only a predetermined thickness portion of the first coating film without cross-linking the entire first coating film.</p><p> Further, the first coating film contains a carrier-transporting organic compound containing at least one of a triphenylamine derivative and a polythiophene derivative, and a crosslinkable organic compound containing a silane coupling compound, and the first alteration In the step, it is preferable that the crosslinkable organic compound contained in the first coating film is crosslinked by heat treatment. According to the present invention, a cross-linking reaction at a predetermined thickness portion can be reliably generated. For example, by adjusting the heating temperature and the heating time, it is possible to crosslink only a predetermined thickness portion of the first coating film without cross-linking the entire first coating film.</p><p> Further, the first coating film contains a carrier-transporting organic compound and a crosslinkable organic compound containing at least one of a double-bonding group, an epoxy group and a cyclic ether group, and in the first alteration step. , The crosslinkable organic compound contained in the first coating film is heat-treated, the crosslinkable organic compound is irradiated with ultraviolet rays, the crosslinkable organic compound is irradiated with an electron beam, or the crosslinkable organic compound is irradiated with plasma. It is preferable to crosslink by cross-linking. According to the present invention, the first coating film contains a carrier-transporting organic compound and a crosslinkable organic compound containing at least one of a double-bonding group, an epoxy group and a cyclic ether group, and the first alteration In the process, the crosslinkable organic compound contained in the first coating film is heat-treated, the crosslinkable organic compound is irradiated with ultraviolet rays, the crosslinkable organic compound is irradiated with an electron beam, or the crosslinkable organic compound is irradiated with plasma. Since the cross-linking is performed, the cross-linking reaction at a predetermined thickness portion can be surely generated. For example, in the case of heating, the heating temperature and heating time are adjusted, and in the case of irradiation with ultraviolet rays, electron beams, and plasma, the irradiation intensity and irradiation time are adjusted, respectively, so that the entire first coating film is not crosslinked. 1 It is possible to crosslink only a predetermined thickness portion of the coating film.</p><p> In particular, when cross-linking a crosslinkable organic compound by irradiating it with ultraviolet rays, by using a photomask in which the transmittance of the ultraviolet rays differs depending on the location, the amount of ultraviolet rays irradiated depends on the position of the first coating film. You can make a difference. It is known that the larger the irradiation amount of ultraviolet rays, the thicker the thickness of the first coating film that deteriorates. According to this, by making a difference in the irradiation amount of ultraviolet rays, it is possible to make a difference in the thickness of the first coating film that is altered in the alteration process, and by extension, it is possible to make a difference in the layer thickness of the first organic layer. it can. For example, when an organic electroluminescence device has a plurality of pixel regions and emits light having different wavelengths (colors) such as red, green, and blue, the optimum hole injection amount differs for each color. ing. On the other hand, according to the present invention, holes can be injected at an optimum hole injection amount by making a difference in the layer thickness of the first organic layer for each color. As described above, there is an advantage that the range of choices in designing the organic electroluminescence device is widened.</p><p> Further, the second coating film contains a luminescent organic compound and a crosslinkable organic compound containing at least one of a double-bonding group, an epoxy group and a cyclic ether group. The crosslinkable organic compound contained in the second coating film is heat-treated, the crosslinkable organic compound is irradiated with ultraviolet rays, the crosslinkable organic compound is irradiated with an electron beam, or the crosslinkable organic compound is irradiated with plasma. Therefore, it is preferable to crosslink. According to the present invention, the material constituting the second organic layer contains a luminescent organic compound and a crosslinkable organic compound containing at least one of a double bond group, an epoxy group and a cyclic ether group. In the second alteration step, the crosslinkable organic compound contained in the second coating film is heated, the crosslinkable organic compound is irradiated with ultraviolet rays, the crosslinkable organic compound is irradiated with an electron beam, or the crosslinkable organic compound is irradiated with plasma. Since it was decided to carry out the cross-linking, the cross-linking reaction at a predetermined thickness portion can be surely generated. For example, in the case of heating, the heating temperature and heating time are adjusted, and in the case of irradiation with ultraviolet rays, electron beams, and plasma, the irradiation intensity and irradiation time are adjusted, respectively, so that the entire first coating film is not crosslinked. 2 It is possible to crosslink only a predetermined thickness portion of the coating film.</p><p> In particular, when cross-linking a crosslinkable organic compound by irradiating it with ultraviolet rays, by using a photomask in which the transmittance of the ultraviolet rays differs depending on the location, the amount of ultraviolet rays irradiated depends on the position of the second coating film. You can make a difference. As described above, by making a difference in the irradiation amount of ultraviolet rays, it is possible to make a difference in the thickness of the second coating film that is altered in the alteration step, and by extension, it is possible to make a difference in the layer thickness of the second organic layer. it can. For example, when an organic electroluminescence device has a plurality of pixel regions and emits light having different wavelengths (colors) such as red, green, and blue, the optimum brightness and light intensity differ for each color. ing. On the other hand, according to the present invention, it is possible to emit light with optimum brightness and light intensity by making a difference in the layer thickness of the second organic layer for each color. As described above, there is an advantage that the range of choices in designing the organic electroluminescence device is widened.</p><p> The organic electroluminescence apparatus according to the present invention is provided on the substrate so as to cover the substrate, the anode provided on the surface of the substrate, and the anode, and the anode is provided at a position where the anode overlaps the anode in a plan view. An insulating layer having a first opening that partially exposes, a hole transport layer provided on the anode so that a portion having hole transportability fits in the first opening, and the hole transport layer. A light emitting layer provided above, a partition wall provided on the insulating layer and having a second opening at a position overlapping the first opening in a plan view, and a partition wall provided so as to cover the partition wall. It is characterized by having an anode electrically connected to the surface.</p><p> The organic electroluminescence device of the present invention has a unique configuration when manufactured by the above-mentioned manufacturing method of the organic electroluminescence device. In the above production method, since the non-altered portion of the first coating film is removed when the first organic layer (hole transport layer) is formed, the thickness of the formed hole transport layer is reduced accordingly. Since the layer thickness is reduced, the hole-transporting portion is not formed up to the inside of the partition wall opening (second opening), and is completely contained in the insulation layer opening (first opening). Will be formed like this.</p><p> In particular, when the opening area of the partition wall opening is larger than the opening area of the insulating layer opening, when the droplet is applied by the droplet ejection method, the droplet does not fit in the insulating layer opening and is inside the partition wall opening. It is often formed to cover the upper surface of the insulating layer. When the hole transport layer is formed with the upper surface of the insulating layer covered, the holes from the anode are also supplied to the portion formed on the upper surface of the insulating layer.</p><p> When the hole transport layer is formed on the upper surface of the insulating layer, the light emitting layer, which is the upper layer of the hole transport layer, is also formed on the upper surface of the insulating layer. Since holes are also injected into the portion of the light emitting layer formed on the upper surface of the insulating layer, light is emitted even in this portion. The desired light emitting region of the organic electroluminescence apparatus is the region where the anode is exposed (the region of the first opening). When holes are injected into the portion formed on the upper surface of the insulating layer, light is emitted outside the region of the first opening. Since the light is emitted in a wider area than the first opening, which is the original light emitting area, the display accuracy is lowered.</p><p> On the other hand, according to the present invention, since the hole-transporting portion of the hole-transporting layer is provided so as to fit inside the first opening, light is emitted outside the original light-emitting region. Can be avoided. This makes it possible to obtain an organic electroluminescence device with high display accuracy.</p><p> Further, it is preferable that the light emitting layer is provided so as to fit in the first opening. In the present invention, in addition to the hole-transporting portion of the hole-transporting layer, the light-emitting portion of the light-emitting layer is also provided so as to fit inside the first opening. In the above-mentioned production method, since the non-altered portion of the second coating film is removed when the second organic layer (light emitting layer) is formed, the light emitting layer is also formed to have a thin layer thickness. According to the present invention, since the light emitting portion of the light emitting layer is also contained in the first opening, it is possible to more reliably avoid emitting light outside the region of the first opening.</p>
[First Embodiment] Hereinafter, the first embodiment of the present invention will be described with reference to the drawings. (Organic EL Device) FIG. 1 is a cross-sectional view showing a schematic configuration of the organic EL device 1. In the figure below, the scale is changed as appropriate in order to make each member recognizable. The organic EL device 1 of the present embodiment is an active matrix type organic EL device provided with a thin film transistor as a switching element.
The organic EL device 1 is mainly composed of an element substrate 2, an organic EL layer 3, and a protective layer 4. The organic EL device 1 has a configuration in which an organic EL layer 3 is formed on an element substrate 2 and a protective layer 4 is formed so as to cover the organic EL layer 3. In the present embodiment, a so-called bottom emission type organic EL device in which light from the organic EL layer 3 is emitted in the direction of the element substrate 2 will be described as an example.
The element substrate 2 includes a substrate 5, a surface layer 6, a semiconductor layer 7, a gate insulating layer 8, a gate electrode 9, a first insulating layer 10, a source electrode 11, and a second insulating layer 12. are doing. The substrate 5 is a rectangular substrate made of a material that can transmit light, such as glass or quartz. The surface layer 6 is formed on the surface of the substrate 5, and is an insulating layer made of, for example, silicon oxide or silicon nitride.
The semiconductor layer 7 is, for example, a layer made of amorphous silicon, and is divided into five regions. A channel region 7a is provided in the center of the semiconductor layer 7 in the left-right direction in the figure. On the source side (right side in the figure) with reference to the channel area 7a, a low concentration source area 7b is provided on the right side of the figure of the channel area 7a, and a high concentration source area 7b is provided on the right side of the figure of the low concentration source area 7b. A concentration source region 7c is provided. On the drain side (left side in the figure) of the channel region 7a, a low concentration drain region 7d is provided on the left side of the figure of the channel region 7a, and a high concentration drain region 7d is provided on the left side of the figure of the low concentration drain region 7d. Region 7e is provided.
The gate insulating layer 8 is an insulating layer provided so as to cover the surface layer 6 and the semiconductor layer 7. The gate electrode 9 is an electrode provided on the gate insulating layer 8 and is arranged at a position where it overlaps the channel region 7a of the semiconductor layer 7 in a plan view. Although not shown, the gate electrode 9 has, for example, a multi-layer structure in which three metal layers are stacked, the lower layer (immediately above the gate insulating layer 8) is a titanium nitride layer, the middle layer is a mixed layer of aluminum and copper, and the upper layer is. It has a titanium layer. The semiconductor layer 7, the gate insulating layer 8, and the gate electrode 9 constitute a TFT (thin film transistor) which is a switching element of the organic EL device 1.
The first insulating layer 10 is made of, for example, silicon oxide or silicon nitride, and is provided so as to cover the gate insulating layer 8 and the gate electrode 9. The source electrode 11 is an electrode provided on the first insulating layer 10, and is a high-concentration source region of the semiconductor layer 7 through a contact hole 13 formed through the first insulating layer 10 and the gate insulating layer 8. It is connected to 7c. Like the single-layer metal or the gate electrode 9, the source electrode 11 has a structure in which metal layers are stacked in multiple layers. For example, in the case of three layers, the lower layer (immediately above the first insulating layer 10) is a titanium layer ( Or titanium nitride layer), the middle layer is a mixed layer of aluminum and copper, and the upper layer is a titanium layer. The second insulating layer 12 is made of, for example, silicon oxide or silicon nitride, and is provided so as to cover the first insulating layer 10 and the source electrode 11.
An organic EL layer 3 is provided on the second insulating layer 12 of the element substrate 2. The organic EL layer 3 is mainly composed of an anode 21, a hole transport layer (first organic layer) 22, a light emitting layer (second organic layer) 23, a cathode 24, a partition wall 25, and an insulating layer 27. Has been done.
The anode 21 is provided in a thin film form directly above the second insulating layer 12 of the element substrate 2, and is a conductive metal oxide that can transmit light, for example, ITO (Indium Tin Oxide) or IZO (Indium). It consists of materials such as Zinc Oxide). The anode 21 is connected to the high-concentration drain region 7e of the semiconductor layer 7 via a contact hole 14 penetrating the three insulating layers of the second insulating layer 12, the first insulating layer 10, and the gate insulating layer 8.
The insulating layer 27 is made of an insulating member such as silicon nitride, and is provided on the surface of the second insulating layer 12 of the element substrate 2 including the anode 21. The insulating layer 27 is provided with openings 26 arranged in a matrix in a plan view. The opening 26 is provided so as to expose a part of the anode 21.
The hole transport layer 22 is a layer for injecting holes from the anode 21 into the light emitting layer 23, and is provided on the anode 21. The hole transport layer 22 is provided so as to completely fit within the opening 26 of the insulating layer 27. The height position of the upper surface 22a of the hole transport layer 22 (height from the second insulating layer 12) is lower than the height position of the upper surface 27a of the insulating layer 27, and the upper surface 22a is flat. It has become.
The hole transport layer 22 is composed of a carrier transport organic compound and a crosslinkable organic compound. Examples of the carrier-transporting organic compound include conventionally known electron-transporting organic compounds and those in which a functional group is introduced into the electron-transporting organic compound, for example, 2,5-bis (1-naphthyl) -1,3,4. -Oxadiazole (BND), 2- (4-t-butylphenyl) -5- (4-biphenylyl) -1,3,4-oxadiazole and 2,5-bis (1- (2-2-) Oxa-pentenyl) naphthyl) -1,3,4-oxadiazole and 2- (4- (2-oxa-4-pentenyl) phenyl) -5- (1-naphthyl) -1,3,4-oxa Diazole and the like can be used. As the crosslinkable organic compound, for example, polysiloxanes such as polymethylhydrogensilicone and polyphenylhydrogensilicone, and copolymers thereof can be used.
In addition, as a carrier-transporting organic compound, for example, poly (9,9-dioctylfluorene-2,7-diyl) -alt- (N, N'-bis (4-terrary-butylphenyl) shown in [Chemical formula 1]] Triphenylamine derivatives and polythiophene derivatives such as -N, N'-diphenylbenzidine-4', 4''-diyl)) (hereinafter referred to as PF8-TPD) have been converted into crosslinkable organic compounds, for example, [Chemical Formula 2]. A silane coupling cross-linking agent such as γ-glycidyloxypropyltrimethoxysilane shown above may be used in combination.
<chemistry num="1"><img file="JP4175397B2_D0001.tif" /></chemistry>
<chemistry num="2"><img file="JP4175397B2_D0002.tif" /></chemistry>
Further, a low molecular weight cross-linking agent having a double bond group, an epoxy group or a cyclic ether group may be used as the carrier transporting organic compound. As the low molecular weight cross-linking agent, a cross-linking agent that crosslinks by ultraviolet irradiation, electron beam irradiation, plasma irradiation, heating, or the like is preferably used. It is preferable to use a low molecular weight cross-linking agent having a molecular weight of 5000 or less, more preferably the molecular weight is in the range of 15 to 3000, and particularly preferably the molecular weight is in the range of 50 to 1000. The low molecular weight cross-linking agent used in the present invention preferably has at least two functional groups. When the functional group is represented by G and the molecular skeleton is represented by R, as the low molecular weight cross-linking agent in the present invention, for example, the one having the structure shown in [Chemical Formula 3] is used.
<chemistry num="3"><img file="JP4175397B2_D0003.tif" /></chemistry>
Further, a cross-linking agent having one functional group as shown in [Chemical Formula 4] may be contained.
<chemistry num="4"><img file="JP4175397B2_D0004.tif" /></chemistry>
Examples of the molecular skeleton R include those having the structures shown in [Chemical formula 5] and [Chemical formula 6].
<chemistry num="5"><img file="JP4175397B2_D0005.tif" /></chemistry>
<chemistry num="6"><img file="JP4175397B2_D0006.tif" /></chemistry>
In the case of a cross-linking agent having one functional group, R is, for example, hydrogen, alkyl group, alkoxy group, alkylthio group, alkylsilyl group, alkylamino group, aryl group, aryloxy group, arylalkyl group, arylalkoxy group. , Arylalkenyl group, arylalkynyl group, arylamino group, heterocyclic compound group and the like are preferable.
Examples of the functional group G include a double bond group, an epoxy group, a cyclic ether group and the like. Examples of the double bond group include a vinyl group, an acrylate group, a methacrylate group and the like. The epoxy group may be a glycidyl group. Examples of the cyclic ether group include an oxetane group. Therefore, examples of the functional group G include those having the structure shown in [Chemical formula 7].
<chemistry num="7"><img file="JP4175397B2_D0007.tif" /></chemistry>
Specific examples of the low molecular weight cross-linking agent in the present invention include divinylbenzene, acrylates, methacrylates, vinyl acetate, acrylonitrile, acrylamide, ethylene glycol diacrylate, ethylene glycol dimethacrylate, ethylene glycol divinyl ether, and ethylene glycol diglycidyl ether. Ethylene glycol dicyclopentenyl ether acrylate, 1,3-butanediol diacrylate, 1,4-butanediol diacrylate, 1,4-butanediol diglycidyl ether, 1,3-butanediol dimethacrylate, 1,4-butane Didiol dimethacrylate, 1,4-butanediol divinyl ether, 1,6-hexine diol diacrylate, 1,6-hexanediol dimethacrylate, 1,6-hexanediol divinyl ether, 1,6-hexanediol ethoxylate di Acrylate, 1,6-hexanediol propoxylate diacrylate, trimethylol propane triacrylate, trimethylol propane triglycidyl ether, trimethylol trimethacrylate, trimethylol propane ethoxylate methyl ether diacrylate, trimethylol propane ethoxylate triacrylate, tri Methylolpropan propoxylate triacrylate, pentaerythritol tetraacrylate, pentaerythritol tetramethacrylate, bisphenol A diacrylate, bisphenol A dimethacrylate, bisphenol A ethoxylate diacrylate, bisphenol A ethoxylate dimethacrylate, bisphenol A propoxylate diacrylate, bisphenol A Examples thereof include propoxylate diglycidyl ether and bisphenol A dimethacrylate.
The light emitting layer 23 is a layer in which holes from the hole transport layer 22 and electrons from the cathode 24 combine to emit light, and is provided on the hole transport layer 22. The light emitting layer 23 is composed of a luminescent organic compound, for example, a fluorene derivative (or a polyfluorene derivative), a paraphenylene vinylene derivative (or a polyparaphenylene vinylene derivative), a polyphenylene derivative (PP), a polyparaphenylene derivative (PPP), Polysilanes such as polyvinylcarbazole (PVK), polythiophene derivatives, and polymethylphenylsilane (PMPS) are preferably used. These polymer materials include polymer materials such as perylene dyes, coumarin dyes, rhodamine dyes, rubrene, perylene, 9,10-diphenylanthracene, tetraphenyl butadiene, nile red, coumarin 6, quinacridone, etc. It can also be used by doping with a low molecular weight material.
The cathode 24 is an electrode made of a metal having high conductivity and light reflectance, such as aluminum or silver, and is an electrode for injecting electrons into the light emitting layer 23. The cathode 24 also has a function as a reflective layer that reflects the light emitted by the light emitting layer 23 toward the substrate 5 (lower side in the drawing). The cathode 24 is formed on the entire surface of the organic EL layer 3 including the insulating layer 27, the partition wall 25, and the light emitting layer 23.
(Manufacturing Method of Organic EL Device) Next, a manufacturing method of the organic EL device 1 configured as described above will be described. First, the surface layer 6, the semiconductor layer 7, the gate insulating layer 8, and the gate electrode 9 are formed in this order on the substrate 5, and the first insulating layer 10, the contact hole 13, the source electrode 11, the second insulating layer, and the contact hole 14 are formed in this order. Form. Then, the anode 21 is formed so as to overlap the surface of the contact hole 14, and the partition wall 25 is formed after patterning.
Next, the hole transport layer 22 is formed in the partition wall 25. This process will be specifically described. A liquid composition in which, for example, PF8-TPD, which is a carrier transportable material, and, for example, γ-glycidyloxypropyltrimethoxysilane, which is a crosslinkable material, is dissolved in an organic solvent is prepared in advance. Organic solvents include isopropyl alcohol (IPA), normal butanol, γ-butyrolactone, N-methylpyrrolidone (NMP), 1,3-dimethyl-2-imidazolidinone (DMI) and its derivatives, carbitol acetate, butyl carbito. -Glycol ethers such as luacetate can be used.
As shown in FIG. 2, this liquid composition is discharged onto the anode 21 in the partition wall 25 by an inkjet method to form a coating film 40 and dry the coating film 40.
After the coating film 40 is formed, the periphery of the substrate 5 is evacuated and dried for about 30 minutes, and then the coating film 40 is heated at a temperature of about 150 ° C. for about 10 minutes on a hot plate in a nitrogen atmosphere. As shown in FIG. 3, a predetermined thickness portion of the coating film 40 on the surface side of the anode 21 is crosslinked and cured by heating. In the cured portion (cured portion 41), the oxygen atom contained in the metal oxide of the anode 21 and the crosslinked portion are chemically bonded by cross-linking the organic compound, and this portion is insoluble in the organic solvent. It becomes. The surface side of the coating film 40 is not cured by heating (non-curing portion 42) and remains soluble in an organic solvent.
After heating the substrate 5, the uncured portion 42 of the coating film 40 is removed as shown in FIG. For example, a rinse solution made of an organic material such as toluene is dropped onto the substrate 5, and the rinse solution is spread over the entire surface of the substrate 5 by a spin coating method to wash away the uncured portion 42. At this time, for example, the rotation speed of the substrate 5 is set to about 2000 rpm, and the rotation time is set to about 30 seconds. Since the cured portion 41 of the coating film 40 is insoluble in the organic solvent, only the non-cured portion 42 is washed away, and the cured portion 41 remains on the substrate 5. After rinsing, the substrate 5 is dried. The remaining cured portion 41 becomes the hole transport layer 22.
Next, the light emitting layer 23 is formed in the partition wall 25. A liquid composition in which the above-mentioned luminescent material is dissolved in the above-mentioned organic solvent is prepared in advance. As shown in FIG. 5, the coating film 50 of this liquid composition is ejected and formed on the hole transport layer 22 in the partition wall 25 by an inkjet method. Since the hole transport layer 22 is the above-mentioned cured portion 41 and is unnecessary for the organic solvent, this organic solvent does not dissolve the hole transport layer 22. The light emitting layer 23 is formed by heating and drying the coating film 50 formed by the discharge film.
After the light emitting layer 23 is formed, the cathode 24 is formed on the entire surface of the EL element to form the organic EL layer 3. Further, a resin seal and a protective layer 4 are formed so as to cover the organic EL layer 3, and the organic EL device 1 is completed.
As described above, according to the present embodiment, the coating film 40 of the liquid composition in which the material constituting the hole transport layer 22 is dissolved or dispersed in the organic solvent is formed on the anode 21 and is the target of the coating film 40. A cured portion 41 is formed by curing a predetermined thickness portion on the surface side so as not to dissolve in a predetermined solvent containing the organic solvent, and the uncured non-cured portion 42 of the coating film 40 is removed with toluene or the like. As a result, the hole transport layer 22 is formed, so that the cured portion 41 remains, and the cured portion 41 becomes the hole transport layer 22 having a uniform layer thickness. Since the light emitting layer 23 is formed on the hole transport layer 22 having a uniform layer thickness, holes are uniformly injected into the light emitting layer 23. This makes it possible to eliminate uneven light emission.
The organic EL device 1 of the present embodiment has a unique configuration when manufactured through the above manufacturing process. In the above manufacturing process, since the non-altered portion 42 of the coating film 40 is removed when the hole transport layer 22 is formed, the thickness of the formed hole transport layer 22 is reduced accordingly. By reducing the layer thickness, the portion having hole transportability is not formed up to the inside of the opening 28 of the partition wall 25, but is formed so as to fit entirely in the opening 26 of the insulating layer 27. ..
In the organic EL device 1, the opening area of the partition wall 25 is larger than the opening area of the opening 26 of the insulating layer 27, and when the droplet is applied by the droplet ejection method, the droplet is the opening 26 of the insulating layer 27. It does not fit inside, and is formed even inside the opening 28 of the partition wall 25, so that the upper surface 27a of the insulating layer 27 is covered. When the hole transport layer 22 is formed while the upper surface 27a of the insulating layer 27 is covered, the holes from the anode 21 are also supplied to the portion formed on the upper surface 27a of the insulating layer 27.
When the hole transport layer 22 is formed on the upper surface 27a of the insulating layer 27, the light emitting layer 23, which is the upper layer of the hole transport layer 22, is also formed on the upper surface 27a of the insulating layer 27. Since holes are also injected into the portion of the light emitting layer 23 formed on the upper surface 27a of the insulating layer 27, light is emitted also in this portion. The desirable light emitting region of the organic EL device 1 is the region where the anode 21 is exposed (the region of the opening 26). When holes are injected into the portion formed on the upper surface 27a of the insulating layer 27, light is emitted outside the region of the opening 26. Since the light is emitted in a wider area than the first opening, which is the original light emitting area, the display accuracy is lowered.
On the other hand, according to the present embodiment, since the hole transport layer 22 is provided so as to fit inside the opening 26, it is possible to avoid emitting light outside the region of the opening 26. it can. As a result, the organic EL device 1 with high display accuracy can be obtained.
[Second Embodiment] Next, the second embodiment of the present invention will be described. Similar to the first embodiment, in the following figure, the scale is appropriately changed in order to make each member a recognizable size. Further, the description of the same components as those in the first embodiment will be omitted. In the present embodiment, the configuration of the light emitting layer of the organic EL device and the process after forming the hole transport layer in the manufacturing process of the organic EL device are different from those of the first embodiment, and this point will be mainly described.
FIG. 8 is a cross-sectional view showing the configuration of the organic EL device 101 according to the present embodiment. Since the configurations other than the light emitting layer 123 are the same as those in the first embodiment, the description thereof will be omitted. The light emitting layer 123 is provided so as to be laminated on the hole transport layer 122 in the opening 126 of the insulating layer 127. As the material of the light emitting layer 123, the luminescent organic compound of the first embodiment and the crosslinkable organic compound can be appropriately combined. The height position of the upper surface 123a of the light emitting layer 123 (height from the second insulating layer 112) is lower than the height position of the upper surface 127a of the insulating layer 127, and the upper surface 123a becomes flat. There is. That is, in the present embodiment, like the hole transport layer 122, the light emitting layer 123 is also provided so as to be completely accommodated in the opening 126 of the insulating layer 127.
Next, the manufacturing process of the organic EL device 101 configured in this way will be described. In this embodiment, since the formation of the hole transport layer 122 (state shown in FIG. 9) is the same as that of the first embodiment, the description thereof will be omitted, and the steps after the formation of the hole transport layer 122 will be mainly described. ..
A liquid composition in which the luminescent material is dissolved in an organic solvent is prepared in advance. As the luminescent material and the organic solvent, the same ones as those used in the first embodiment are used. As shown in FIG. 10, the coating film 150 of this liquid composition is ejected and formed on the hole transport layer 22 in the partition wall 125 by an inkjet method.
After the coating film 150 is formed, the periphery of the substrate 102 is evacuated and dried for about 30 minutes, and then the coating film 150 is heated at a temperature of about 150 ° C. for about 10 minutes on a hot plate in a nitrogen atmosphere. As shown in FIG. 11, a predetermined thickness portion of the coating film 150 on the surface side of the hole transport layer 122 is crosslinked and cured by heating. The cured portion (cured portion 151) becomes insoluble in an organic solvent. The surface side of the coating film 150 is not cured by heating (non-curing portion 152) and remains soluble in organic solvents.
After heating the substrate 102, the uncured portion 152 of the coating film 150 is removed as shown in FIG. Similar to the formation of the hole transport layer 122, a rinse solution such as toluene is dropped onto the substrate 102, and the rinse solution is spread over the entire surface of the substrate 102 by a spin coating method to wash away the uncured portion 152. The rotation speed and rotation time of the substrate 5 are the same as those at the time of forming the hole transport layer 122. Since the cured portion 151 of the coating film 150 is insoluble in the organic solvent, only the non-cured portion 152 is washed away, and the cured portion 151 remains on the hole transport layer 122. After rinsing, the substrate 102 is dried. The remaining cured portion 151 is the light emitting layer 123. After that, the organic EL device 101 is completed through the same steps as in the first embodiment.
According to the present embodiment, in the formation of the light emitting layer 123, a coating film 150 of a liquid composition in which the material constituting the light emitting layer 123 is dissolved or dispersed in an organic solvent is formed on the hole transport layer 122 and coated. It was decided that the predetermined thickness portion of the first organic layer on the surface side of the film 150 was cured so as not to be dissolved in a solvent such as toluene, and the uncured portion 152 of the coating film 150 was removed by the solvent such as toluene. Therefore, the cured portion 151 remains, and the cured portion 151 becomes a light emitting layer 123 having a uniform layer thickness. Since the layer thickness of the light emitting layer 123 becomes uniform in addition to the hole transport layer 122, the organic EL device 101 having extremely high light emission uniformity can be manufactured.
Further, according to the present embodiment, the light emitting layer 123 as well as the hole transport layer 122 is provided so as to fit inside the opening 126 of the insulating layer 127, and is not provided outside the opening 126. It is possible to prevent the light emitting region from expanding. As a result, it is possible to avoid a decrease in display accuracy.
[Third Embodiment] Next, a third embodiment of the present invention will be described. Similar to the first embodiment, in the following figure, the scale is appropriately changed in order to make each member a recognizable size. Further, the description of the same components as those in the first embodiment will be omitted. In the present embodiment, the structure of the hole transport layer and the light emitting layer of the organic EL device and the method of forming the hole transport layer and the light emitting layer in the manufacturing process of the organic EL device are different from those of the first embodiment. I will explain mainly.
FIG. 13 is a cross-sectional view showing the configuration of the organic EL device 201 according to the present embodiment. In the present embodiment, the hole transport layer 222 and the light emitting layer 223 provided on the anode 221 are both provided so as to be completely housed in the opening 226 of the insulating layer 227, and the hole transport layer 222 is provided. And the layer thickness of the light emitting layer 223 is different depending on the pixel. The cathode 224 is provided so as to cover the entire surface of the partition wall 225 and a part of the insulating layer 227, fills the inside of the opening 226 of the insulating layer 227, and is in contact with the entire surface of the upper surface 223a of the light emitting layer 223 in the opening 226. It is provided as follows. In FIG. 13, the thickness of the hole transport layer 122 and the light emitting layer 123 gradually decreases from the left side to the right side in the figure.
The hole transport layer 222 contains the carrier transport organic compound shown in the first embodiment and a crosslinkable organic compound such as a double bond group, an epoxy group and a cyclic ether group. The light emitting layer 223 contains the luminescent organic compound shown in the first embodiment and a crosslinkable organic compound such as a double bond group, an epoxy group and a cyclic ether group similar to the hole transport layer 222.
Next, the manufacturing process of the organic EL device 201 configured in this way will be described. In this embodiment, the formation of the hole transport layer 222 will be mainly described. A liquid composition in which the carrier-transporting organic compound shown in the first embodiment and a crosslinkable organic compound such as a double bond group, an epoxy group and a cyclic ether group are dissolved in an organic solvent is prepared in advance. The organic solvent may be the same as that of the first embodiment.
This liquid composition is discharged onto the anode 221 in the partition wall 225 by an inkjet method to form a coating film 240. After the coating film 240 is formed, the periphery of the substrate 202 is evacuated and dried for about 30 minutes, and then the coating film 240 is irradiated with ultraviolet rays for a certain period of time under atmospheric pressure. By irradiating the coating film 240 with ultraviolet rays, the crosslinkable organic compound contained in the coating film 240 undergoes a cross-linking reaction and becomes insoluble in an organic solvent (altered portion 241).
When irradiating with ultraviolet rays, a photomask 250 configured so that the light transmittance is partially different is used. For example, in the photomask 250, the light transmittance is highest in the region 250a that overlaps the pixel 230a on the left side in FIG. 14 in a plan view, and the light transmittance is the highest in the region 250c that overlaps the pixel 230c on the right side in FIG. 14 in a plan view. Is the lowest. In the region 250b that overlaps the pixel 230b in the center of FIG. 14 in a plan view, the light transmittance is lower than that of the region 250a and higher than that of the region 250c. Therefore, the amount of ultraviolet light emitted to the pixel 230a on the left side is the largest, the amount of ultraviolet light emitted to the pixel 230b in the center is the next largest, and the amount of ultraviolet light emitted to the pixel 230c on the right side is the smallest.
In this way, when irradiation is performed for a certain period of time while making a difference in the irradiation amount of ultraviolet rays depending on the pixel, a difference occurs in the layer thickness of the altered portion 241 of the coating film 240. Specifically, the layer thickness of the altered portion 241 formed in the left pixel 230a having the largest amount of ultraviolet light is the thickest, and the layer of the altered portion 241 formed in the central pixel 230b having the next largest amount of ultraviolet light. The thickness becomes the next thickest, and the layer thickness of the altered portion 241 formed in the right pixel 230c, which has the smallest amount of ultraviolet light, becomes the thinnest. That is, the larger the irradiation amount of ultraviolet rays, the thicker the layer thickness of the altered portion 241 is formed.
After forming the altered portion 240a on the coating film 240, the altered portion 241 of the coating film 240 is removed. For example, a rinsing solution made of an organic material such as toluene is dropped onto the element substrate 202, and the rinsing solution is spread over the entire surface of the element substrate 202 by a spin coating method to wash away the non-altered portion 242. Since the altered portion 241 of the coating film 240 is insoluble in the organic solvent, only the non-altered portion 242 is washed away, and the altered portion 241 remains on the device substrate 202. After rinsing, the element substrate 202 is dried. The remaining altered portion 241 becomes the hole transport layer 222.
Next, the light emitting layer 223 is formed in the partition wall 225. A liquid composition in which the above-mentioned luminescent material is dissolved in the above-mentioned organic solvent is prepared in advance, and a coating film of this liquid composition is ejected and formed on the hole transport layer 222 in the partition wall 225 by an inkjet method. Since the hole transport layer 222 is the above-mentioned altered portion 241 and is unnecessary for the organic solvent, this organic solvent does not dissolve the hole transport layer 222. Similar to the formation of the hole transport layer 222, the coating film formed by ejection is irradiated with ultraviolet rays to cause a cross-linking reaction in a predetermined thickness portion of the coating film on the hole transport layer 222 side to form an organic solvent. On the other hand, it is altered so that it becomes insoluble. After forming the altered portion, the non-altered portion of the coating film is removed with an organic solvent such as toluene. The altered portion remains undissolved in toluene. The remaining altered portion becomes the light emitting layer 223.
After the light emitting layer 223 is formed, the cathode 224 is formed on the entire surface of the EL element to form the organic EL layer 203. Further, a resin seal and a protective film (not shown) are formed so as to cover the organic EL layer 203, and the organic EL device 201 is completed.
As described above, according to the present embodiment, the coating film forming the hole transport layer 222 and the light emitting layer 223 includes a luminescent organic compound and at least one of a double bond group, an epoxy group and a cyclic ether group. Since the cross-linking organic compounds containing the above are included and the cross-linking organic compounds contained in the coating film are cross-linked by irradiating them with ultraviolet rays, a cross-linking reaction at a predetermined thickness portion is surely generated. be able to. By adjusting the irradiation intensity and irradiation time of ultraviolet irradiation, it is possible to adjust the thickness of the portion to be crosslinked without crosslinking the entire coating film.
In particular, since the photomask 250 is used so that the transmittance of the ultraviolet rays differs depending on the location when the crosslinkable organic compound is irradiated with ultraviolet rays, it is possible to provide a difference in the layer thickness of the altered portion 241 for each pixel. .. For example, when the organic EL device 201 emits light having different wavelengths (colors) such as red, green, and blue, the thickness of the hole transport layer 222 and the light emitting layer 223 can be different for each color. , There is an advantage that the design range of the organic EL device 201 is widened.
Although the embodiments of the present invention have been described above, the technical scope of the present invention is not limited to the above embodiments, and modifications can be made as appropriate without departing from the spirit of the present invention. For example, in each of the above embodiments, the organic EL device has been described, but the present invention is not limited to this, and the present invention can be applied to, for example, an organic transistor.
As a material for forming the organic semiconductor layer constituting the organic transistor, C60, C82, metal-encapsulating fullerene containing metal, and the like are particularly preferably used. Examples of metal-encapsulated fullerenes include fullerenes containing dysprosium (Dy) (hereinafter referred to as Dy @ C82). In addition to this, organic low molecules such as pentacene and oligothiophene, organic polymers such as polythiophene, metal complexes such as phthalocyanine, carbon nanotubes and the like are also used.
The material constituting the voltage control layer that imparts anbipolar characteristics to such an organic semiconductor layer is appropriately selected and used according to the material for forming the organic semiconductor layer. Specifically, when the organic semiconductor layer is made of fullerenes, a silane compound is preferably used. Examples of the silane compound include R1 (CH).<sub>2</sub>) MSiR2nX3-n (m is a natural number, n is 1 or 2) A silane compound represented by the general formula is used. In the silane compound represented by such a general formula, when X is a halogen or an alkoxy group, SiO which is preferably used as a gate insulating film.<sub>2</sub>, Al<sub>2</sub>O<sub>3</sub>It is easily chemically adsorbed on the surface of oxides such as, and forms a dense and strong ultrathin film (monolayer). Further, as a result, the terminal group R1 is arranged on the surface of the voltage control layer, and therefore the chemical affinity with the organic semiconductor layer made of fullerene or the like is also increased. In addition, R2 is hydrogen and methyl group (-CH).<sub>3</sub>) Etc. or a derivative thereof.
In such a voltage control layer, as a silane compound capable of imparting abipolar characteristics particularly to an organic semiconductor layer made of fullerenes, for example, in the above formula, R1 is a methyl group (-CH).<sub>3</sub>), Or a trifluoromethyl group (-CF)<sub>3</sub>) Is preferable. In addition to imparting anbipolar characteristics to the organic semiconductor layer, these voltage control layers also have an effect of controlling the threshold voltage of the organic thin film transistor. Specifically, the threshold voltage characteristic of the organic semiconductor layer can be controlled by appropriately changing R1.
In the above embodiment, the bottom emission type organic EL device has been described as an example, but the present invention is not limited to this, and the top emission type organic EL device in which the light from the light emitting layer is emitted to the opposite side to the substrate is used. Even so, the application of the present invention is of course possible. Further, the present invention can be applied not only to organic EL devices and organic transistors but also to devices such as solar cells having an organic semiconductor layer.
In the above embodiment, when a low-molecular-weight cross-linking agent having a double-bonding group, an epoxy group, or a cyclic ether group is used as the carrier-transporting organic compound contained in the hole transport layer 22, the cross-linking is performed by heating and ultraviolet rays. Although the example of cross-linking by irradiation has been described, the present invention is not limited to this, and for example, cross-linking may be performed by plasma irradiation or electron beam irradiation.
Next, an example of the organic EL device 1 in the first embodiment will be described. FIG. 7 is a cross-sectional view of one pixel of the organic EL device 1 shown in FIG. The figure shows changes in the surface of the hole transport layer formed by the inkjet method. The surface (1) is the result of measuring the film thickness of the coating film 40 immediately after forming the coating film 40 by the inkjet method and heating it to form the cured portion 41. The surface (2) is the result of measuring the film thickness of the remaining cured portion after removing the uncured portion of the coating film 40 shown in the surface (1) with a rinsing solution.
As shown in the surface (1), the thickness of the coating film 40 gradually increases from the side surface 25b of the partition wall 25 to the central portion of the opening 28, and reaches a peak at the central portion. That is, it is shown that the coating film 40 is formed in a raised shape at the central portion of the pixel. It is shown that the distribution is formed in the film thickness in this way only by forming the coating film 40 by the inkjet method and heating it.
This surface (1) also covers the side surface 27b of the opening 26 of the insulating layer 27 and the upper surface 27a of the insulating layer 27. That is, the coating film 40 is also formed on the upper surface 27a and the side surface 27b of the insulating layer 27, and the portion of the coating film 40 formed on the anode 21 and the portion formed on the upper surface 27a are formed on the side surface 27b. It shows that it is integrally formed through the part.
On the other hand, as shown by the surface (2), the coating film 40 is formed on the anode 21 with a uniform film thickness from the side surface 25b to the central portion of the partition wall 25. Since the coating film 40 having a uniform film thickness serves as the hole transport layer 22, the distribution of the current density in the hole transport layer 22 becomes uniform. Therefore, light emission unevenness does not occur in the pixel.
Further, the side surface 27b of the opening 26 and the upper surface 27a of the insulating layer 27 indicate that the coating film 40 is not formed on the upper surface 27a and the side surface 27b of the insulating layer 27. The portion having hole transporting property is only the portion formed on the anode 21. Therefore, the holes from the anode 21 are supplied only into the region of the opening 26 of the insulating layer 27. Even when the light emitting layer 23 is formed on the hole transport layer 22, the region outside the light emitting region in the pixel does not emit light, and a decrease in display accuracy can be avoided.
<figref num="1">The cross-sectional view which shows the whole structure of the organic EL apparatus which concerns on 1st Embodiment of this invention.</figref><figref num="2">The process chart which shows the manufacturing process of the organic EL apparatus which concerns on this embodiment.</figref><figref num="3">Same as above, process chart.</figref><figref num="4">Same as above, process chart.</figref><figref num="5">Same as above, process chart.</figref><figref num="6">Same as above, process chart.</figref><figref num="7">The figure which shows the change of the film thickness of the hole transport layer in the manufacturing process of an organic EL apparatus.</figref><figref num="8">The cross-sectional view which shows the whole structure of the organic EL apparatus which concerns on 2nd Embodiment of this invention.</figref><figref num="9">The process drawing which shows the manufacturing process of the organic EL apparatus which concerns on this embodiment.</figref><figref num="10">Same as above, process chart.</figref><figref num="11">Same as above, process chart.</figref><figref num="12">Same as above, process chart.</figref><figref num="13">Same as above, process chart.</figref><figref num="14">Same as above, process chart.</figref>
Code description
1 ... Organic EL device 2 ... Element substrate 3 ... Organic EL layer 21 ... Anode 22 ... Hole transport layer 23 ... Light emitting layer 24 ... Cathode 25 ... Partition 26 ... Opening 27 ... Insulating layer 28 ... Opening 40 ... Coating film 41 ... Hardened part 42 ... Non-curing part 50 ... Coating film
21 sheets
Sheet 1 Sheet 2 Sheet 3 Sheet 4 Sheet 5 Sheet 6 Sheet 7 Sheet 8 Sheet 9 Sheet 10 Sheet 11 Sheet 12 Sheet 13 Sheet 14 Sheet 15 Sheet 16 Sheet 17 Sheet 18 Sheet 19 Sheet 20 Sheet 21
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| Document | Relation | Office |
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| WO2006041027A1 | Cites | World Intellectual Property Organization (WIPO) |
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| JP2003142273A | Cites | Japan |
| JP2002170667A | Cites | Japan |
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Numbers
- Publication
- 4175397
- Application
- 177912
Titles2
- Japanese
- 有機エレクトロルミネセンス装置の製造方法
- English
- Manufacturing method of organic electroluminescence device
Classification
- CPC, 5
- H10K71/135
- H05B33/10
- H10K59/122
- H10K71/233
- H10K50/14
- IPC, 7
- H05B33 10
- H01L51 50
- H05B33 12
- H05B33 22
- G09F9 30
- H01L27 32
- H10K99 00
