Plasma process device

[0001] The present invention relates to a plasma process apparatus, and more specifically, to perform processing such as film formation, etching, and ashing on a large square glass substrate using plasma. Regarding plasma process equipment capable of

PROBLEM TO BE SOLVED: To conventionally know a plasma process apparatus which performs film formation, etching, ashing and the like using plasma in order to manufacture a semiconductor apparatus. In such a plasma process apparatus, an electron cyclotron resonance plasma excitation method for exciting plasma by using microwaves and a DC magnetic field is known as one of the methods for generating plasma used for the above-mentioned processing. However, in this electron cyclotron resonance plasma excitation method, stable plasma cannot be obtained unless the atmospheric pressure at which plasma is generated is set to a low pressure of several mTorr or less. Further, since the electron temperature in the plasma is high, the plasma formed by the electron cyclotron resonance plasma excitation method is not suitable for the above-mentioned process such as film formation. Further, in the electron cyclotron resonance plasma excitation method as described above, it is necessary to form a DC magnetic field, so that the plasma process apparatus itself has become large in size. As a result, there is a problem that the manufacturing cost of the plasma process apparatus becomes high.

[0003] On the other hand, there is known a method of exciting plasma by using a surface wave of microwaves propagating in a dielectric without using a DC magnetic field as described above. In this plasma excitation method using microwave surface waves, stable plasma can be obtained even if the atmospheric pressure at the time of generating plasma is set in a relatively wide range of several tens of mTorr to several torr or more. Further, since the electron temperature in the plasma is relatively low, it is possible to obtain a plasma suitable for a process such as film formation as described above.

[0004] Further, in a process such as plasma CVD (Chemical Vapor Deposition) or etching treatment in which a reaction generation gas is generated from the surface of a substrate, it is necessary to uniformly introduce the reaction gas to the entire surface of the substrate on which the reaction is occurring. There is. This is to make the process conditions such as film formation and etching uniform over the entire surface of the substrate. As one means for achieving such an object, a technique of utilizing a shower plate for supplying a reaction gas in a plasma process apparatus is known. Here, the shower plate refers to a plate-shaped member that is arranged so as to face the substrate to be processed and has a plurality of reaction gas introduction holes for introducing the reaction gas into the processing chamber in which the substrate is arranged.

[0005] Conventionally, a plasma process device using a radial line slot antenna has been known as a plasma process device that simultaneously uses a shower plate and a method of exciting plasma using a microwave surface wave as described above. There is. Figure 1<u style="single">4</u>Is a schematic cross-sectional view showing a plasma process apparatus using a conventional radial line slot antenna. Figure 1<u style="single">4</u>The plasma process apparatus will be described with reference to.

[0006] Fig. 1<u style="single">4</u>The plasma process apparatus 150 includes a vacuum vessel 156, a shower plate 153, a dielectric plate 152, a radial line slot antenna 151, and an exhaust pump 155 as a processing chamber. Inside the vacuum vessel 156, a circular substrate 154 on which a film forming process is performed is installed on the substrate holder. A shower plate 153 made of a dielectric is installed on the upper wall surface of the vacuum container 156 facing the substrate 154. A dielectric plate 152 is installed on the shower plate 153 with a gap 163 in between. A radial line slot antenna 151 is installed on the dielectric plate 152. The planar shape of the shower plate 153, the dielectric plate 152, and the radial line slot antenna 151 is circular. A reaction gas introduction path 157 is formed so as to connect to the gap 163 between the shower plate 153 and the dielectric plate 152. The reaction gas introduced into the void 163 from the reaction gas introduction path 157 is introduced into the inside of the vacuum vessel 156 through the gas introduction hole formed in the shower plate 153.

[0007] Then, the microwave introduced from the radial line slot antenna 151 to the inside of the vacuum vessel 156 via the dielectric plate 152, the void 163, and the shower plate 153 composed of the dielectric causes substantially the entire surface of the substrate 154. A uniform plasma 158 is formed from this reaction gas. With this plasma 158, processing such as film formation can be performed on the surface of the substrate 154. Then, the reaction gas and the reaction generation gas that did not contribute to the treatment are discharged to the outside of the vacuum vessel 156 by the exhaust pump 155.

[0008] Fig. 1<u style="single">5</u>Is in Figure 1<u style="single">4</u>It is a perspective sectional schematic diagram which shows the radial line slot antenna shown in. Figure 1<u style="single">5</u>The radial line slot antenna will be described with reference to.

[0009] Fig. 1<u style="single">5</u>The radial line slot antenna 151 is a slot made of a coaxial waveguide 160, a ground plate 159 made of a conductor, a dielectric plate 161 and a conductor made of a slot 162 (a humanoid fine hole). It is equipped with a board 164. A dielectric plate 161 is arranged under the ground plate 159. A slot plate 164 is installed on the lower surface of the dielectric plate 161. A coaxial waveguide 160 is connected to the dielectric plate 161. Microwaves are transmitted from this coaxial waveguide 160 to the dielectric plate 161. The dielectric plate 161 acts as a radial microwave propagation path. Then, microwaves are radiated from the entire lower surface of the radial line slot antenna 151 from the slot 162 formed in the slot plate 164.

PROBLEM TO BE SOLVED: To solve a problem in a plasma process apparatus using a conventional radial line slot antenna as described above, as described above, plasma excitation by microwaves and a treatment chamber using a shower plate. Achieves a uniform supply of reaction gas. However, the plasma process apparatus using the radial line slot antenna as described above has the following problems.

That is, FIG.<u style="single">4</u>In a conventional plasma process apparatus, the microwave for forming the plasma 158 is from the radial line slot antenna 151 through the dielectric plate 152, the void 163 and the shower plate 153 to the vacuum vessel 156 as a processing chamber. It is supplied to the inside of. At this time, the void 163, which is the transmission path of the microwave, also serves as a supply path for the reaction gas to the vacuum vessel 156. Therefore, a reaction gas for generating plasma exists inside the gap 163. In this case, the microwave transmitted from the radial line slot antenna 151 to the inside of the vacuum vessel 156 may generate plasma inside the gap 163. When plasma is generated inside the void 163 in this way, there arises a problem that the shower plate 153 and the dielectric plate 152 are damaged by the plasma. In order to prevent the generation of plasma in the void 163 (generation of abnormal plasma), the pressure of the reaction gas in the void 163 has conventionally been made much higher than the pressure of the reaction gas inside the vacuum vessel 156. This is due to the following reasons. That is, the electrons in the reaction gas are accelerated by the electric field generated by the microwave. However, by increasing the pressure of the reaction gas inside the void 163 to, for example, 10 Torr or more, the accelerated electrons can collide with other gas molecules before they are sufficiently accelerated by the above electric field. it can. As a result, it is possible to prevent the electrons from having sufficient energy to excite the plasma, so that the generation of the plasma can be suppressed.

[0012] While increasing the pressure of the reaction gas in the void 163 in this way, it is necessary to maintain the pressure inside the vacuum vessel 156 at about several mTorr. Therefore, it is necessary to keep the pressure of the reaction gas in the void 163 high, while sufficiently reducing the supply amount of the reaction gas to the vacuum vessel 156. Therefore, it is necessary to reduce the ease of flow (conductance) of the reaction gas in the reaction gas introduction hole formed in the shower plate 153. In order to realize such a small conductance, it was necessary to form fine gas introduction holes in the shower plate 153 with extremely high processing accuracy (processing accuracy on the order of 10 μm). On the other hand, the shower plate 153 needs to be formed of a dielectric material such as ceramics in order to propagate microwaves. It is extremely difficult to form a gas introduction hole having high dimensional accuracy in such a dielectric. As a result, there is a problem that the manufacturing cost of the shower plate increases.

[0013] Further, since it is necessary to keep the pressure of the reaction gas in the void 163 high as described above, it is difficult to accurately control the process conditions such as the component ratio of the reaction gas and the flow rate of the reaction gas. As a result, when the process conditions such as the gas component ratio deviate from the predetermined numerical range, it is difficult to adjust the process conditions, and it becomes difficult to carry out a plasma process such as film formation under the predetermined conditions. was there.

[0014] Further, FIG. 1<u style="single">4</u>And 1<u style="single">5</u>As shown in the above, since the conventional radial line slot antenna 151 is circular, it is possible to cover the entire surface of the square substrate in order to apply it to a square substrate used for a TFT type liquid crystal display device or the like. As described above, it was necessary to use a shower plate 153 that was larger than the square substrate. Further, this square substrate is increasing in size from 500 mm square to 1 m square as the size of the liquid crystal display device is increasing. However, as described above, the radial line slot antenna 151 and the shower plate 153 are formed by using a dielectric plate such as ceramics. Since it is difficult to form a dielectric plate made of such a large-sized ceramic or the like, it has been difficult for a conventional plasma process apparatus to support a large square substrate.

[0015] The present invention has been made to solve the above-mentioned problems, and an object of the present invention is to be able to form a uniform plasma and to support a large-area substrate at low cost. It is to provide a plasma process apparatus capable of.

[Means for Solving the Problems] The present invention<u style="single">Followed</u>The plasma process equipment includes a processing chamber and microwave introduction means.<u style="single">With pedestal</u>With shower plate<u style="single">Dielectric plate</u>And.<u style="single">Formed by container members</u>In the processing room, processing using plasma is performed. The microwave introduction means introduces microwaves into the processing chamber.<u style="single">The pedestal is fixed to the container member inside the processing chamber and is made of a conductor.</u>Shower plate<u style="single">Fixed to the pedestal,</u>It has a gas introduction hole for supplying the reaction gas that is turned into a plasma state by microwaves to the processing chamber.<u style="single">The dielectric plate is arranged so as to be embedded in the pedestal, and the microwave is transmitted from the microwave introducing means to the shower plate. Between the pedestal and the shower plate, a gas introduction gap for supplying the reaction gas to the gas introduction hole is formed in a region other than the microwave transmission path including the microwave introduction means, the dielectric plate and the shower plate. So that the shower plate is fixed to the pedestal</u>。

[0017] Here, the microwave does not pass through the conductor. Therefore, the gas located on the upper surface of the shower plate<u style="single">Introductory gap</u>The wall surface is a conductor<u style="single">Of the pedestal consisting of</u>Since it contains a wall surface, it is a component in which the electric field amplitude of the microwave transmitted from the microwave introduction means to the processing chamber is large.<u style="single">Ga</u>Su<u style="single">Introductory gap</u>It can be prevented from being introduced into. As a result<u style="single">, Moth</u>Su<u style="single">Introductory gap</u>It is possible to prevent the formation of plasma from the reaction gas (generation of abnormal plasma) due to this microwave. As a result<u style="single">, Moth</u>Su<u style="single">Introductory gap</u>It is possible to prevent the wall surface of the shower plate, that is, the upper surface of the shower plate, from being damaged by plasma.

[0018] Also<u style="single">, Moth</u>Su<u style="single">Introductory gap</u>Because it is possible to prevent the generation of abnormal plasma in<u style="single">, Moth</u>Su<u style="single">Introductory gap</u>The pressure of the reaction gas in the above can be set lower than before. For this reason<u style="single">, Moth</u>Su<u style="single">Introductory gap</u>Since the difference between the pressure of the reaction gas and the pressure of the reaction gas inside the treatment chamber can be reduced, the conductance of the reaction gas in the gas introduction hole of the shower plate can be increased as compared with the conventional case. Therefore, the size of the gas introduction hole in the shower plate can be made larger than that of the conventional one, so that the conventional high-precision processing is not required in the process of processing the gas introduction hole. As a result, the manufacturing cost of the shower plate can be reduced.

[0019] Also<u style="single">, Moth</u>Su<u style="single">Introductory gap</u>Since the difference between the pressure of the reaction gas and the pressure of the reaction gas inside the treatment chamber can be reduced, the process conditions such as the components of the reaction gas can be adjusted more easily than before. As a result, plasma having a predetermined component can be easily obtained.

Further, since the reaction gas can be uniformly supplied to the processing chamber by using the shower plate, a uniform plasma can be obtained.<u style="single">。</u>[0021] Above<u style="single">Note</u>In the Razuma process equipment, the shower plate is located on the lower surface facing the processing chamber and on the opposite side of the lower surface.<u style="single">Facing the pedestal</u>May have an upper surface<u style="single">, Moth</u>Su<u style="single">Introductory gap</u>The wall surface of the shower plate faces the upper surface of the shower plate and the upper surface of the shower plate.<u style="single">Of the pedestal</u>May include walls<u style="single">I.</u>[0022] In this case<u style="single">, Moth</u>Su<u style="single">Introductory gap</u>The wall surface is made of a conductor that does not allow microwaves to pass through.<u style="single">Of the pedestal</u>Because it contains a wall<u style="single">, Moth</u>Su<u style="single">Introductory gap</u>It is possible to reliably prevent the microwave introduction means from irradiating a component having a large electric field amplitude of the microwave. As a result<u style="single">, Moth</u>Su<u style="single">Introductory gap</u>It is possible to more reliably prevent the generation of abnormal plasma in.

[0023] Above<u style="single">Note</u>In the Razuma process apparatus, the gas introduction hole of the shower plate may be formed so as to penetrate from the upper surface to the lower surface of the shower plate, and the diameter of the gas introduction hole on the lower surface of the shower plate is the gas introduction hole on the upper surface of the shower plate. May be larger than the diameter of the hole<u style="single">I.</u>[0024] In this case, the cross-sectional shape of the gas introduction hole can be made to expand from the upper surface to the lower surface of the shower plate. Therefore, the reaction gas released from the gas introduction hole to the inside of the treatment chamber can be released not only in the direction perpendicular to the lower surface of the shower plate but also in the diagonal direction with respect to the lower surface of the shower plate. it can. As a result, the distribution of the reaction gas can be made more uniform inside the treatment chamber. As a result, the plasma process can be performed under more uniform conditions.

[0025] Above<u style="single">Note</u>In the Razuma process equipment, the shower plate may consist of multiple shower plate parts.<u style="single">I.</u>[0026] In this case, a small shower plate portion can be manufactured using existing manufacturing equipment or the like, and a shower plate having a large area can be formed by combining these shower plate portions. As a result, a shower plate having a large area can be easily obtained.

[0027] Further, such a small shower plate portion can be easily obtained of a uniform material by using existing manufacturing equipment, as compared with the case of forming a large shower plate. As a result, it is possible to obtain a shower plate made of a uniform and excellent material as compared with the case where a large shower plate is formed as an integral body.

[0028] Further, in a plasma process apparatus using a shower plate including a plurality of shower plate portions, when a part of the shower plate portion is damaged, only the damaged shower plate portion is generated. The equipment can be repaired easily and quickly by replacing the shower. As a result, the labor and time required for maintenance of the plasma process apparatus can be reduced.

[0029] Above<u style="single">Note</u>In the Razuma process equipment, the shower plate may contain a dielectric.<u style="single">I.</u>[0030] In this case, since the microwave is transmitted through the dielectric, the microwave supplied from the microwave introducing means can be easily transmitted to the processing chamber via the shower plate.

[0031] Above<u style="single">Note</u>In the Razuma process equipment, the dielectric may be ceramics whose main component is aluminum nitride.<u style="single">I.</u>[0032] Here, since aluminum nitride has excellent heat conduction characteristics, when the shower plate is locally heated by the plasma formed inside the treatment chamber, it is added locally. The heat generated can be quickly transferred to the entire shower plate. As a result, the shower plate can be prevented from being damaged by this local heating.

[0033] Further, by using a material having excellent heat conduction characteristics as the shower plate in this way, when a high temperature portion is partially generated in the treatment chamber, the heat of the high temperature portion is transferred to another through the shower plate. You can quickly reach the area. Therefore, the atmospheric temperature in the processing chamber can be easily made uniform.

[0034] Above<u style="single">Note</u>Razuma process equipment<u style="single">, Shi</u>Lower plate fixing part<u style="single">Material</u>May be prepared<u style="single">.. Shi</u>The shower plate fixing member may be fixed by pressing the shower plate against the pedestal.<u style="single">I.</u>[0035] Here, when a screw is used to fix the shower plate to the pedestal, it is necessary to form a screw hole for inserting the screw into the shower plate made of a dielectric material. By performing such screw hole processing, the manufacturing cost of the shower plate increases. However, in the plasma process apparatus according to the present invention, since the shower plate is fixed by pressing it against the pedestal, it is not necessary to form screw holes in the shower plate. As a result, the manufacturing cost of the shower plate can be reduced.

【0036】<u style="single">the above</u>The plasma process apparatus may be provided with a flow rate control means for controlling the flow rate of the reaction gas in the gas introduction hole of the shower plate.<u style="single">I.</u>[0037] In this case, since the flow rate of the reaction gas supplied to the processing chamber can be adjusted by this flow rate control means, the conditions of the plasma process in the processing chamber can be easily optimized.

[0038] Above<u style="single">Note</u>In the Razuma process equipment, the flow control means may include a plug that is inserted into the gas inlet hole of the shower plate.<u style="single">I.</u>[0039] In this case, the conductance of the reaction gas in the gas introduction hole of the shower plate can be changed by changing the diameter of the plug while keeping the inner diameter of the gas introduction hole constant. That is, a hole having a certain size is formed in advance as the gas introduction hole of the shower plate. Then, the diameter of the plug is determined so as to form a gap that serves as a gas flow path through which the reaction gas flows between the inner wall of the gas introduction hole and the side wall of the plug. In this way, the gas introduction hole of the shower plate can be easily processed, and at the same time, the conductance of the reaction gas in the gas introduction hole of the shower plate can be changed by exchanging the plug. As a result, the processing cost of the shower plate can be reduced, and at the same time, the process conditions such as the flow rate of the reaction gas can be easily changed.

[0040] Above<u style="single">Note</u>In the Razuma process apparatus, the planar shape of the shower plate may be substantially square.

[0041] In this case, it is possible to obtain a plasma process apparatus suitable for processing such as film formation and etching using a CVD method on a square glass substrate used for a liquid crystal display device or the like.

[0042] Above<u style="single">Note</u>In the Razuma process apparatus, the microwave introduction means may include a single mode microwave waveguide.

[0043] In this case, the microwave can be easily controlled, and at the same time, stable and uniform microwave can be transmitted to the processing chamber.

BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the drawings below, the same or corresponding parts will be given the same reference number, and the explanation will not be repeated.

(Embodiment 1) FIG. 1 is a schematic plan view showing the first embodiment of the plasma process apparatus according to the present invention. The plasma process apparatus will be described with reference to FIG.

[0046] With reference to FIG. 1, the plasma process apparatus includes four waveguides 1a to 1d and shower plates 3a to 3d as microwave introduction means for transmitting microwaves. As shown in FIG. 2, the waveguides 1a to 1d and the shower plates 3a to 3d are installed on the vacuum container top lid, which is a container member forming the processing chamber. Here, FIG. 2 is a schematic cross-sectional view of the line segment 100-100 shown in FIG.

[0047] With reference to FIG. 2, a first dielectric plate 2a to 2d acting as a microwave introduction window is formed under the waveguides 1a to 1d. The first dielectric plates 2a to 2d are arranged so as to be embedded in the shower plate holder 5 for holding the shower plates 3a to 3d. The shower plate holder 5 is made of a conductor such as metal. Shower plates 3a to 3d are arranged on the lower surface of the shower plate holder 5. The shower plates 3a to 3d are arranged so that their upper surfaces are in contact with the first dielectric plates 2a to 2d, respectively. Gas introduction holes 18 (see FIG. 3) are formed in the shower plates 3a to 3d. The gas introduction holes 18 are connected to the gas introduction paths 4a to 4d and 6a to 6d. The substrate 8 is arranged on the fixed base so as to be located below the shower plates 3a to 3d. This substrate 8 is a glass substrate for a liquid crystal display device, and its size is a large substrate of about 500 mm square to 1 m square.

[0048] With reference to FIG. 3, the structure of the shower plate portion of the plasma process apparatus according to the present invention will be described in more detail. FIG. 3 is an enlarged schematic cross-sectional view showing a part of the vacuum container top lid of the plasma process apparatus shown in FIG.

[0049] With reference to FIG. 3, the shower plate holder 5 is fixed to the vacuum vessel top lid on which the waveguides 1a and 1b are formed by the fixing bolts 9a and 9b. The shower plates 3a and 3b are fixed to the shower plate holder 5 using fixing bolts 10a and 10b. Gas introduction paths 4a to 4d (see Fig. 2) are formed on the top lid of the vacuum vessel. The gas introduction path 4a formed in the upper lid of the vacuum vessel is connected to the gas introduction gap 7a as a reaction gas supply path via the gas introduction path 6a formed in the shower plate holder 5. The gas introduction gap 7a includes the upper surface of the shower plate 3a and the lower surface of the shower plate holder 5 as the conductor wall surface in the wall surface. The gas introduction gap 7a is connected to the gas introduction hole 18 formed in the shower plate 3a. Then, the reaction gas supplied from the gas introduction path 4a reaches the gas introduction gap 7a via the gas introduction path 6a. Then, the reaction gas is uniformly distributed from the gas introduction gap 7a to the inside of the processing chamber where plasma is formed through the gas introduction hole 18. The other gas introduction paths 4e, 4f, 6e, 6f and the gas introduction gaps 7b, 7c shown in the figure also have the same structure.

[0050] Under the waveguides 1a and 1b, the first dielectric plates 2a and 2b are installed as described above. Shower plates 3a and 3b are arranged below the first dielectric plates 2a and 2b. Microwaves are transmitted from the waveguides 1a and 1b to the shower plates 3a and 3b via the first dielectric plates 2a and 2b. Here, the first dielectric plates 2a and 2b are preferably made of Al2O3, which has a high microwave transmittance and is easily processed and obtained. The microwave transmitted to the shower plates 3a and 3b via the first dielectric plates 2a and 2b is irradiated from the region located under the first dielectric plates 2a and 2b to the inside of the treatment chamber, and the shower plate. Plasma is generated on the lower surface of 3a and 3b. Since microwaves cannot propagate deep in the plasma, the excessively injected microwaves propagate laterally in the shower plates 3a and 3b. As a result, microwaves are irradiated from the entire lower surface of the shower plates 3a and 3b to the inside of the treatment chamber. Then, the microwave emitted in this way excites the reaction gas released from the gas introduction hole 18 into the inside of the processing chamber, so that the plasma is almost uniform over the entire surface of the substrate 8 (see FIG. 2). Occurs. Using this plasma, processing such as film formation, etching, and ashing can be performed on the substrate 8.

[0051] Here, the conductor such as metal forming the shower plate holder 5 does not transmit microwaves. As described above, the gas introduction gap 7a includes the upper surface of the shower plate 3a and the lower surface of the shower plate holder 5 on its side wall, so that the waveguide 1a as a microwave introduction means is moved to the processing chamber. It is possible to prevent a component having a large electric field amplitude of the transmitted microwave from being introduced into the gas introduction gap 7a. As a result, it is possible to prevent the formation of plasma from the reaction gas (generation of abnormal plasma) due to the microwaves in the gas introduction gap 7a. As a result, it is possible to prevent the wall surface of the gas introduction gap 7a, that is, the upper surface of the shower plate 3a and the like from being damaged by plasma.

Further, since it is possible to prevent the generation of abnormal plasma in the gas introduction gap 7a, the pressure of the reaction gas in the gas introduction gap 7a can be set lower than before. As a result, the difference between the pressure of the reaction gas in the gas introduction gap 7a and the pressure of the reaction gas inside the treatment chamber can be reduced, so that the conductance of the reaction gas in the gas introduction hole 18 of the shower plate 3a can be reduced as compared with the conventional case. It can be made larger. As a result, the size of the gas introduction hole 18 in the shower plate 3a can be made larger than that of the conventional one, so that the conventional high-precision processing is not required in the processing process of the gas introduction hole 18. Therefore, the manufacturing cost of the shower plate 3a can be reduced.

Further, since the difference between the pressure of the reaction gas in the gas introduction gap 7a and the pressure of the reaction gas inside the treatment chamber can be reduced, it is easier than before to adjust the process conditions such as the components of the reaction gas. It can be carried out. Further, since the reaction gas can be uniformly supplied to the inside of the treatment chamber by using the shower plate, a uniform plasma can be obtained.

[0054] Further, as described above, the shower plates 3a to 3d as the shower plate portion can be used to easily form a shower plate having a large area. As a result, it becomes possible to easily handle a large substrate.

[0055] Further, the region located under the opening of the waveguides 1a to 1d as the microwave introduction means serves as a microwave transmission path, and the gas introduction gaps 7a to 7c are formed by the shower plate 3a, On the upper surface of 3b, it is formed in a region other than the region located below the opening in the lower part of the waveguides 1a and 1b.

[0056] In this case, the microwave transmission path and the gas introduction gaps 7a to 7c can be prevented from overlapping. As a result, it is possible to reliably prevent the gas introduction gaps 7a to 7c from being irradiated with a component having a large electric field amplitude of microwaves, so that the reaction gas is irradiated with microwaves in the gas introduction gaps 7a to 7c. It is possible to prevent the generation of plasma due to the above. As a result, it is possible to prevent the walls of the gas introduction gaps 7a to 7c from being damaged by this plasma, and at the same time, it is possible to reduce the manufacturing cost of the shower plates 3a to 3d as described above, and it is easy to use a large substrate. Can be handled.

Further, as described above, microwaves are transmitted from the waveguides 1a to 1d by the transmission paths from the waveguides 1a to 1d to the first dielectric plates 2a to 2d and the shower plates 3a to 3d (see FIG. 2). Is transmitted to the inside of the processing room. The gas introduction gaps 7a to 7c are formed on the shower plates 3a and 3b in a region other than this transmission path.

Therefore, since it is possible to prevent the gas introduction gaps 7a to 7c from being irradiated with microwaves, it is possible to prevent the walls and the like of the gas introduction gaps 7a to 7c from being damaged by this plasma, and at the same time, it is possible to prevent the gas introduction gaps 7a to 7c from being damaged by the plasma. As described above, the manufacturing cost of the shower plates 3a to 3d can be reduced, and a large substrate can be easily supported.

[0059] Further, in the plasma process apparatus according to the present invention, the gas introduction gaps 7a to 7c are separated by waveguides 1a and 1b as microwave introduction means and a shower plate holder 5 as a conductor.

[0060] Therefore, it is possible to prevent the gas introduction gaps 7a to 7c from being irradiated with a component having a large electric field amplitude of the microwave introduced from the waveguides 1a and 1b into the inside of the processing chamber. As a result, it is possible to prevent the walls of the gas introduction gaps 7a to 7c from being damaged by this plasma, and at the same time, it is possible to reduce the manufacturing cost of the shower plates 3a to 3d as described above, and it is easy to use a large substrate. Can be handled.

[0061] Further, since the shower plate is configured by combining a plurality of small shower plates 3a to 3d as described above, the small shower plates 3a to 3d can be formed by using the existing equipment. As a result, the manufacturing cost of the shower plate can be further reduced.

[0062] Further, when forming a large shower plate corresponding to a large substrate as an integral type, it is necessary to use a large heating furnace or the like corresponding to the size of the shower plate. However, in such a large-scale facility, it is difficult to keep the distribution of the heating temperature of the shower plate uniform. As a result, it was difficult to make the material of the formed shower plate uniform. However, in the shower plate according to the present invention, since the relatively small shower plates 3a to 3d are used, the above-mentioned problems can be avoided.

[0063] Further, since a small shower plate divided like the shower plates 3a to 3d is used, if only a part of the shower plates 3a to 3d is damaged, the damaged portion is provided. Only the shower plate needs to be replaced. As a result, maintenance and inspection work of the plasma process apparatus can be performed more easily than when an integrated shower plate is used.

[0064] Here, the shower plates 3a to 3d are preferably formed using aluminum nitride (AlN). Since this aluminum nitride has high thermal conductivity, even when the shower plates 3a to 3d are locally heated, the locally applied heat can be quickly transferred to other parts. Therefore, it is possible to prevent the shower plates 3a to 3d from being damaged due to such local heat. Further, by using a material having high thermal conductivity as the shower plates 3a to 3d in this way, the atmospheric temperature in the processing chamber can be made uniform over the entire surface of the substrate 8. As a result, the conditions of the plasma process can be made more uniform over the entire surface of the substrate 8.

Further, as shown in FIG. 1, since the plane outer shape of the shower plate formed from the shower plates 3a to 3d has a quadrangular outer shape, the flat glass substrate which is a substrate of a liquid crystal display device or the like is used. Therefore, the plasma process apparatus according to the present invention can be easily applied.

[0066] Further, by using the single-mode microwave waveguide as the waveguides 1a to 1d, the microwave can be easily controlled and a stable and uniform microwave can be sent to the inside of the processing chamber. Can be transmitted.

[0067] Further, the gas introduction hole 18 has a substantially circular cross-sectional shape in the horizontal direction, and the gas introduction hole on the lower surface of the shower plates 3a to 3d is larger than the diameter of the gas introduction hole 18 on the upper surface of the shower plates 3a to 3d. It is formed so that the diameter of 18 is increased. Therefore, the reaction gas released from the gas introduction hole 18 into the treatment chamber is released not only in a direction substantially perpendicular to the lower surface of the shower plates 3a to 3d but also in a diagonal direction with respect to the lower surface. As a result, the distribution of the reaction gas in the treatment chamber can be made more uniform. Thereby, for example, when the plasma CVD method is performed using this plasma, the film quality and the film thickness of the CVD film formed on the surface of the substrate 8 can be made more uniform over the entire surface of the substrate 8.

[0068] Although the shower plate holder 5 is made of an integrated metal here, the shower plate holder itself may be divided into four parts corresponding to the shower plates 3a to 3d. By dividing the shower plate holder 5 itself in this way, the state of assembly between the shower plates 3a to 3d and the shower plate holder 5 and the state of the gas introduction gaps 7a to 7c are removed from the plasma process device. Can be inspected (offline) at. As a result, the time and labor required for maintenance and inspection of the plasma process apparatus can be further reduced.

(Embodiment 2) FIG. 4 is a schematic cross-sectional view showing the second embodiment of the shower plate of the plasma process apparatus according to the present invention. The shower plate will be described with reference to FIG.

[0070] With reference to FIG. 4, core members 12a and 12b, which are plugs as flow rate control means, are installed in the gas introduction holes of the shower plate 3. Further, a spacer 11 for keeping the height of the gas introduction gap 7 constant is installed on the upper surface of the shower plate 3. The structure of the core member 12a installed in the gas introduction hole will be described with reference to FIG. FIG. 5 is a schematic side view of the core member shown in FIG. With reference to FIG. 5, the core member 12a includes a rod portion 13a and a nut portion 14a. The rod portion 13a and the nut portion 14a are separable, and are formed so that the upper portion of the rod portion 13a is a male screw and the nut portion 14a is a female screw. Then, after inserting the rod portion 13a into the gas introduction hole of the shower plate 3, the nut portion 14a is fitted from the upper surface of the shower plate 3 to the upper portion of the rod portion 13a to insert the core member 12a into the shower plate 3. It can be fixed to the gas introduction hole. At this time, the core member 12a is in contact with the shower plate 3 at the rod contact portions 15a and 15b and the nut contact portions 16a and 16b. A groove serving as a flow path for the reaction gas is formed on the surface of the shower plate 3 in contact with the nut contact portions 16a and 16b or the nut contact portions 16a and 16b.

By using such core members 12a and 12b, the conductance of the reaction gas in the gas introduction hole can be easily controlled by adjusting the dimensions of the rod contact portions 15a and 15b and the nut contact portions 16a and 16b. can do.

Further, if such core members 12a and 12b are used, when clogging or the like occurs in the gas introduction hole, after removing the core members 12a and 12b, such clogging can be cleaned. Maintenance can be easily performed. As a result, the time and labor required for maintenance of the shower plate 3 can be reduced.

[0073] Further, as shown in FIG. 6, cutout surfaces 17a and 17b may be formed on the side surface of the rod portion 13a. Here, FIG. 6 is a schematic cross-sectional view of the line segments 200-200 shown in FIG. By forming such cutout surfaces 17a and 17b, the conductance of the reaction gas in the gas introduction hole can be easily changed by changing the notch depths of the cutout surfaces 17a and 17b.

[0074] Further, if the diameters of the gas introduction holes of the shower plate 3 are the same and a plurality of types of core members 12a and 12b are prepared, the shower plate 3 can be replaced by exchanging the core members 12a and 12b. The conductance of the reaction gas in the gas introduction hole can be easily changed. As a result, the manufacturing cost of the plasma process apparatus can be reduced as compared with the case where a plurality of shower plates 3 having different diameters of the gas introduction holes are prepared.

[0075] Further, if a gas introduction hole having a size large enough to insert such core members 12a and 12b is formed, it is finer than when a gas introduction hole having a small diameter for obtaining the required conductance is formed. Since no special processing is required, the manufacturing cost of the shower plate can be further reduced.

(Embodiment 3) FIG. 7 is a schematic plan view showing the third embodiment of the plasma process apparatus according to the present invention. Note that FIG. 7 shows a schematic plan view when the lower surfaces of the shower plates 3a to 3d are viewed from below the shower plate of the plasma process apparatus according to the present invention. The plasma process apparatus will be described with reference to FIG.

[0077] With reference to FIG. 7, shower plates 3a to 3d divided into four are installed on the vacuum container top lid 23 as a container member of the plasma process apparatus. Gas introduction holes 18 for supplying the reaction gas to the inside of the treatment chamber are formed in the shower plates 3a to 3d, respectively. A shower plate fixing member 19 for fixing the shower plates 3a to 3d to the shower plate holder 5 (see FIG. 8) as a pedestal is arranged on the outer peripheral portion of the shower plates 3a to 3d. The cross-sectional structure of this plasma process apparatus will be described with reference to FIG.

[0078] FIG. 8 is a schematic cross-sectional view of the line segments 300-300 shown in FIG. 7. With reference to FIG. 8, the substrate 8 is installed on the substrate holder 20 inside the vacuum vessel 21 as a processing chamber. Further, an exhaust hole 22 is formed at the bottom of the vacuum container 21. The exhaust hole 22 is connected to an exhaust pump, and exhausts the reaction generation gas and the reaction gas that did not contribute to the plasma process from the inside of the vacuum vessel 21.

However, in the plasma process apparatus shown in FIGS. 7 and 8, the shower plates 3a to 3d are fixed to the shower plate holder 5 by using the shower plate fixing member 19. The shower plate fixing member 19 has a support portion extending to the lower surface of the shower plates 3a to 3d at the outer peripheral portion of the shower plates 3a to 3d. Shower plates 3a to 3d are supported by this support portion. Then, the shower plate fixing member 19 is fixed to the shower plate holder 5 with screws or the like. The shower plate fixing member 19 presses the outer peripheral portion of the shower plates 3a to 3d against the shower plate holder 5 by the supporting portion, so that the shower plates 3a to 3d are fixed to the shower plate holder 5. Other structures are the same as those of the plasma process apparatus according to the first embodiment of the present invention shown in FIGS.

[0080] In this way, it is not necessary to perform a processing step such as forming a groove for a screw in the shower plates 3a to 3d. As a result, the manufacturing cost of the shower plates 3a to 3d can be further reduced.

[0081] In the plasma process apparatus shown in FIG. 8, the gas introduction holes 18 of the shower plates 3a to 3d are formed in regions other than under the first dielectric plates 2a and 2b. As a result, the gas introduction gaps 7a to 7c can be reliably formed in a region other than the plasma transmission path, so that the generation of abnormal plasma in the gas introduction gaps 7a to 7c can be reliably prevented.

[0082] FIG. 9 is a schematic cross-sectional view taken along the line segments 400-400 shown in FIG. 7. With reference to FIG. 9, it can be seen that the first dielectric plate 2a is formed so as to extend in the extending direction of the waveguide 1a. Further, it can be seen that the shower plate 3c is fixed to the shower plate holder 5 by using the shower plate fixing member 19 in the same manner as the shower plates 3a and 3b.

[0083] FIG. 10 is a schematic upper plan view of the plasma process apparatus according to the present invention shown in FIG. 7 as viewed from above the vacuum vessel upper lid 23. Further, FIG. 11 is a schematic cross-sectional view of the line segments 500-500 shown in FIG. With reference to FIGS. 10 and 11, microwaves are supplied from the waveguide 24 to the waveguides 1a and 1b. That is, the microwave introduced into the waveguide 24 in FIG. 10 from above the paper surface branches to the left and right toward the waveguides 1a and 1b as shown in FIG. 10, and further branches into the waveguides 1a and 1b, respectively. It is supplied from the center to its ends.

(Embodiment 4) FIG. 12 is a schematic plan view showing the fourth embodiment of the plasma process apparatus according to the present invention. Note that FIG. 12 shows a schematic plan view of the vacuum container top lid when viewed from the lower surface of the shower plate of the plasma process apparatus as in FIG. 7.

[0085] With reference to FIG. 12, the plasma process apparatus basically has the same structure as the plasma process apparatus shown in FIG. 7. However, in the plasma process apparatus shown in FIG. 12, shower plates 3a and 3b divided into two are used as shower plates. Even in such a case, the same effect as that of the third embodiment of the plasma process apparatus according to the present invention can be obtained.

(Embodiment 5) FIG. 13 is a schematic plan view showing the fifth embodiment of the plasma process apparatus according to the present invention. Note that FIG. 13 shows a schematic plan view of the vacuum container top lid when viewed from the lower surface of the shower plate of the plasma process apparatus as in FIG.

[0087] With reference to FIG. 13, the plasma process apparatus basically has the same structure as the plasma process apparatus shown in FIG. 7. However, in the plasma process apparatus shown in FIG. 13, an integrated shower plate 3a is used as the shower plate. In this case, the number of shower plate fixing members 19 can be reduced as compared with the case of using the split type shower plate. As a result, the process of installing the shower plate 3a on the shower plate holder 5 can be simplified.

[0088] The structure of the vacuum vessel top lid 23 from the shower plate 3a to the waveguides 1a and 1b is basically the same as that of the plasma process apparatus shown in FIG. 7. As a result, it is possible to prevent the generation of abnormal plasma in the gas introduction gap portion located on the shower plate 3a as in the first embodiment. Therefore, as in the first embodiment, the difference between the pressure of the reaction gas in the gas introduction gap and the pressure of the reaction gas inside the treatment chamber can be reduced, so that the size of the gas introduction hole 18 in the shower plate 3a can be reduced. Can be made larger than before. Therefore, in the processing process of the gas introduction hole 18, the conventional high-precision processing becomes unnecessary. As a result, the manufacturing cost of the shower plate 3a can be reduced. Further, as in the first embodiment, the process conditions such as the components of the reaction gas can be adjusted more easily than before.<u style="single">。</u>【0089】<u style="single">Na</u>In the plasma process apparatus according to the present invention, the above-described first embodiment to<u style="single">5</u>Instead of the configuration in which the substrate 8 is installed horizontally as shown in the above, the configuration in which the substrate 8 is arranged upright may be used.

[0090] The embodiments disclosed this time should be considered to be exemplary in all respects and not restrictive. The scope of the present invention is shown not by the above-described embodiment but by the scope of claims, and it is intended that all modifications within the meaning and scope equivalent to the scope of claims are included.

[Effect of the Invention] As described above,<u style="single">Book</u>According to the invention<u style="single">, Moth</u>Su<u style="single">Introductory gap</u>Since it is possible to suppress the generation of abnormal plasma in the above, it is possible to form a uniform plasma, and it is possible to obtain a plasma process apparatus capable of supporting a large-area substrate at low cost.

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic plan view showing a first embodiment of a plasma process apparatus according to the present invention.

FIG. 2 is a schematic cross-sectional view taken along line segment 100-100 shown in FIG.

FIG. 3 is an enlarged cross-sectional schematic view showing a part of the vacuum container top lid of the plasma process apparatus shown in FIG.

FIG. 4 is a schematic cross-sectional view showing a second embodiment of a shower plate of a plasma process apparatus according to the present invention.

5 is a schematic side view of the core member shown in FIG. 4. FIG.

FIG. 6 is a schematic cross-sectional view taken along the line segments 200-200 shown in FIG.

FIG. 7 is a schematic plan view showing a third embodiment of the plasma process apparatus according to the present invention.

FIG. 8 is a schematic cross-sectional view taken along the line segments 300-300 shown in FIG.

9 is a schematic cross-sectional view of line segments 400-400 shown in FIG. 7. FIG.

FIG. 10 is a schematic upper plan view of the plasma process apparatus according to the present invention shown in FIG. 7 as viewed from above the top lid of the vacuum vessel.

FIG. 11 is a schematic cross-sectional view taken along the line segments 500-500 shown in FIG.

FIG. 12 is a schematic plan view showing a fourth embodiment of the plasma process apparatus according to the present invention.

FIG. 13 is a schematic plan view showing a fifth embodiment of the plasma process apparatus according to the present invention.

[Fig. 14] <u style="single">Traditional</u>Plasma process equipment<u style="single">Place</u>It is sectional drawing which shows.

[Fig. 15] Fig. 1<u style="single">The radial line slot antenna shown in 4</u>Show<u style="single">Squint</u>It is a cross-sectional schematic diagram.

[Explanation of symbols] 1a ~ 1d waveguide, 2a ~ 2d first dielectric plate, 3,3a ~ 3d shower plate, 4a ~ 4f, 6a ~ 6f gas introduction path, 5 shower plate holder, 7,7a ~ 7c Gas introduction gap, 8 substrates, 9a, 9b, 10a, 10b fixing bolt, 11 spacer, 12a, 12b core member, 13a rod part, 14a nut part, 15a, 15b rod contact part, 16a, 16b nut contact part , 17a, 17b Notched surface, 18 Gas inlet hole, 19 Shower plate fixing member, 20 Substrate holder, 21 Vacuum vessel, 22 Exhaust hole, 23 Vacuum vessel top lid, 24 Waveguide<u style="single">tube.</u>